JP4083646B2 - Semi-elliptical antenna - Google Patents

Semi-elliptical antenna Download PDF

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JP4083646B2
JP4083646B2 JP2003295338A JP2003295338A JP4083646B2 JP 4083646 B2 JP4083646 B2 JP 4083646B2 JP 2003295338 A JP2003295338 A JP 2003295338A JP 2003295338 A JP2003295338 A JP 2003295338A JP 4083646 B2 JP4083646 B2 JP 4083646B2
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parallel plate
semi
antenna
short
lower parallel
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JP2005065103A (en
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伊市 若生
久松 中野
潤治 山内
正章 瀬戸
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Yagi Antenna Co Ltd
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Description

本発明は、数ＧＨｚ〜数十ＧＨｚ帯で使用される広角ビームを有する半楕円形状アンテナに関する。   The present invention relates to a semi-elliptical antenna having a wide-angle beam used in a band of several GHz to several tens of GHz.

従来、数ＧＨｚ〜数十ＧＨｚ帯の電波をビーム状に放射するアンテナとしてホーンアンテナが一般に知られているが、このホーンアンテナは水平面の放射角度が狭いので、最近、広角ビーム特性を有する半円ラジアルアンテナが考えられている（例えば、特許文献１参照。）。   Conventionally, a horn antenna is generally known as an antenna that radiates radio waves of several GHz to several tens of GHz in the form of a beam. However, since this horn antenna has a narrow horizontal plane radiation angle, it has recently become a semicircle having a wide-angle beam characteristic. A radial antenna is considered (for example, see Patent Document 1).

上記半円ラジアルアンテナは、半円状の上部平行板と下部平行板とを所定の間隔の間隔を保って対向配置すると共に、その基部（直線端部）を短絡壁により短絡して上部平行板と下部平行板との間に半円ラジアル導波路を構成し、上記半円ラジアル導波路に外部から給電するようにしたもので、半値幅１２０°程度の広角ビーム特性とすることができる。
特開２０００−３３２５３２号公報 The semicircular radial antenna has an upper parallel plate in which a semicircular upper parallel plate and a lower parallel plate are arranged to face each other at a predetermined interval, and a base (straight end) is short-circuited by a short-circuit wall. A semicircular radial waveguide is formed between the lower parallel plate and the lower parallel plate, and power is supplied to the semicircular radial waveguide from the outside, and a wide-angle beam characteristic having a half-value width of about 120 ° can be obtained.
JP 2000-332532 A

上記のように半円ラジアルアンテナは、広角ビーム特性が得られるものであるが、例えば無線ＬＡＮ等に使用する場合には更に広角特性のものが要求されている。   As described above, the semicircular radial antenna can obtain a wide-angle beam characteristic. However, when it is used for, for example, a wireless LAN, a semi-circular radial antenna is required to have a wider-angle characteristic.

本発明は上記の課題を解決するためになされたもので、半円ラジアルアンテナより更に広角特性とすることができる半楕円形状アンテナを提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semi-elliptical antenna that can have a wider angle characteristic than a semi-circular radial antenna.

本発明に係る半楕円形状アンテナは、半楕円形状の厚さが０．０１λ〜０．５λに設定された、上部平行板及び下部平行板を所定の間隔を保って対向配置して構成するラジアル導波路と、前記上部平行板及び下部平行板の直線端部を短絡する短絡壁と、前記下部平行板の前記短絡壁側中心部近傍に設けられる給電ピンとを具備したことを特徴とする。 The semi-elliptical antenna according to the present invention is a radial structure in which a semi-elliptical thickness is set to 0.01λ to 0.5λ, and an upper parallel plate and a lower parallel plate are arranged to face each other with a predetermined distance therebetween. It is characterized by comprising a waveguide, a short-circuit wall that short-circuits straight ends of the upper parallel plate and the lower parallel plate, and a feed pin provided in the vicinity of the central portion of the lower parallel plate on the short-circuit wall side.

本発明によれば、上部平行板及び下部平行板を半楕円形状とすることにより、半円ラジアルアンテナより更に広角特性とすることができる。   According to the present invention, by making the upper parallel plate and the lower parallel plate into a semi-elliptical shape, it is possible to obtain a wider angle characteristic than the semicircular radial antenna.

以下、図面を参照して本発明の一実施形態を説明する。
（第１実施形態）
図１及び図２は、本発明の第１実施形態に係る半楕円形状アンテナ１の基本構成図を示したもので、図１は外観斜視図、図２は同断面図である。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
(First embodiment)
1 and 2 show a basic configuration diagram of a semi-elliptical antenna 1 according to a first embodiment of the present invention. FIG. 1 is an external perspective view, and FIG. 2 is a sectional view thereof.

図１、図２に示すように半楕円形状アンテナ１は、金属板によりほぼ半楕円形状に形成した上部平行板２と下部平行板３とを所定の間隔Ｓを保って対向配置すると共に、基準端部となる短軸側の直線端部を短絡壁４により短絡し、上部平行板２と下部平行板３との間にラジアル導波路５を構成している。すなわち、ラジアル導波路５は、基準端部が短絡壁４により短絡され、円周部が開口した状態に形成される。上部平行板２と下部平行板３との間隔Ｓは、例えば約０．２６λ（λ：波長）に設定される。また、上部平行板２及び下部平行板３は、短軸長を２ｒｘ、長軸長を２ｒｙ、厚さをＢとする。   As shown in FIGS. 1 and 2, the semi-elliptical antenna 1 includes an upper parallel plate 2 and a lower parallel plate 3 that are formed in a substantially semi-elliptical shape by a metal plate and are opposed to each other with a predetermined distance S therebetween. A straight end on the short axis side that is an end is short-circuited by the short-circuit wall 4, and a radial waveguide 5 is configured between the upper parallel plate 2 and the lower parallel plate 3. That is, the radial waveguide 5 is formed in a state where the reference end is short-circuited by the short-circuit wall 4 and the circumferential portion is opened. The distance S between the upper parallel plate 2 and the lower parallel plate 3 is set to, for example, about 0.26λ (λ: wavelength). The upper parallel plate 2 and the lower parallel plate 3 have a short axis length of 2rx, a long axis length of 2ry, and a thickness of B.

そして、下部平行板３には、図２及び図３に示すように短絡壁４から一定の間隔Ｄpro例えば約０．２５λ（λ／４）離れた中心位置において、給電部を構成する給電ピン（プローブ）１１及び同軸コネクタ１２が設けられる。この同軸コネクタ１２は、下部平行板３の外部に設けられ、その中心導体が給電ピン１１としてラジアル導波路５内に突出して設けられる。上記給電ピン１１は、例えば長さＬproが約０．１７５λ、直径Ｗproが約０．０４λに設定される。上記同軸コネクタ１２には同軸ケーブルが接続され、給電ピン１１への給電が行なわれる。   As shown in FIGS. 2 and 3, the lower parallel plate 3 has a power supply pin (a power supply pin) that forms a power supply unit at a central position away from the short-circuit wall 4 by a certain distance Dpro, for example, about 0.25λ (λ / 4). Probe) 11 and coaxial connector 12 are provided. The coaxial connector 12 is provided outside the lower parallel plate 3, and a central conductor thereof is provided as a feed pin 11 so as to protrude into the radial waveguide 5. For example, the power supply pin 11 has a length Lpro of about 0.175λ and a diameter Wpro of about 0.04λ. A coaxial cable is connected to the coaxial connector 12 to supply power to the power supply pin 11.

上記のように上部平行板２及び下部平行板３を半楕円形状に形成することにより、図４に示すように広角ビーム特性とすることができる。
図４は、上記のように構成した半楕円形状アンテナ１の放射特性を示したもので、（Ａ）は、ｘ−ｙ面（水平面）の放射パターン、（Ｂ）はｙ−ｚ面（垂直面）の放射パターンを示している。この場合、半楕円形状アンテナ１の周波数を１２．５ＧＨｚ（波長λ＝２４．０ｍｍ）とし、各部の寸法を次のように設定した。なお、上部平行板２及び下部平行板３の厚さＢを例えばλ／２００以下とし、実質的に０に近い値、すなわち無視できる程度の値とする。そして、短軸長２ｒｘを「２×０．５２λ」の固定値とし、長軸におけるｒｙの値を（ａ）０．６３λ、（ｂ）０．９４λ、（ｃ）１．４６λに変化させて放射特性を解析した。 By forming the upper parallel plate 2 and the lower parallel plate 3 in a semi-elliptical shape as described above, wide-angle beam characteristics can be obtained as shown in FIG.
FIG. 4 shows the radiation characteristics of the semi-elliptical antenna 1 configured as described above. (A) is a radiation pattern on the xy plane (horizontal plane), and (B) is a yz plane (vertical). The surface radiation pattern is shown. In this case, the frequency of the semi-elliptical antenna 1 was set to 12.5 GHz (wavelength λ = 24.0 mm), and the dimensions of each part were set as follows. The thickness B of the upper parallel plate 2 and the lower parallel plate 3 is, for example, λ / 200 or less, and is a value substantially close to 0, that is, a negligible value. Then, the minor axis length 2r x is set to a fixed value of “2 × 0.52λ”, and the value of r y on the major axis is changed to (a) 0.63λ, (b) 0.94λ, and (c) 1.46λ. The radiation characteristics were analyzed.

Ｂ ≒０
ｒｘ ＝０．５２λ
ｒｙ ＝可変
Ｓ ＝０．２６λ
Ｌpro＝０．１７５λ
Ｗpro＝０．０４λ
Ｄpro＝０．２５λ
また、図１及び図２に示すように、上部平行板２及び下部平行板３の短絡壁４側の中心部（原点）における短軸方向をｘ軸、長軸方向をｙ軸、上記ｘ軸及びｙ軸と直交する垂直方向をｚ軸として図４の放射特性を示した。なお、ｘ軸からｙ軸方向に向かう角度をφとし、ｚ軸からｙ軸方向に向かう角度をθとしている。 B ≒ 0
r x = 0.52λ
r y = variable S = 0.26λ
Lpro = 0.175λ
Wpro = 0.04λ
Dpro = 0.25λ
As shown in FIGS. 1 and 2, the short axis direction at the center (origin) on the short-circuit wall 4 side of the upper parallel plate 2 and the lower parallel plate 3 is the x axis, the long axis direction is the y axis, and the above x axis. The radiation characteristics of FIG. 4 are shown with the vertical direction perpendicular to the y-axis as the z-axis. Note that the angle from the x-axis in the y-axis direction is φ, and the angle from the z-axis in the y-axis direction is θ.

上記半楕円形状アンテナ１は、図４の放射特性から明らかなように半楕円形状アンテナ１の長軸長２ｒｙの値を適切に選ぶことにより、ｘ−ｙ面及びｙ−ｚ面において広角ビームが得られることがわかる。例えばｒｙ＝０．９４λ（図４（ｂ））における半値幅（半電力ビーム幅）は、ｘ−ｙ面において１６４°、ｙ−ｚ面において１６６°である。このとき放射の最大方向は、ｘ−ｙ面及びｙ−ｚ面の両方の面において＋ｙ軸上から離れたところにある。例えばｘ−ｙ面では、約４５°と１３５°の方向が放射の最大方向となっている。 The semi-elliptical shape antenna 1, by choosing the value of the long axis length 2r y of semi-elliptical shape antenna 1 suitably as apparent from radiation characteristic of FIG. 4, a wide angle beam in the x-y plane and y-z plane It can be seen that For example, the half width (half power beam width) in ry = 0.94λ (FIG. 4B) is 164 ° in the xy plane and 166 ° in the yz plane. At this time, the maximum direction of radiation is away from the + y axis in both the xy plane and the yz plane. For example, in the xy plane, directions of about 45 ° and 135 ° are the maximum radiation directions.

上記放射の最大方向を＋ｙ軸上にするために、本実施形態では上部平行板２及び下部平行板３に厚さＢを適切な値に設定する。図５は、上部平行板２及び下部平行板３に厚さＢの値を０．０５８λに設定した場合の放射パターンを示したもので、（ａ）はｘ−ｙ面、（ｂ）はｙ−ｚ面の特性である。また、このとき、短軸におけるｒｘの値は０．５２λ、長軸におけるｒｙの値は０．９４λである。その他の条件は、図４の場合と同じである。 In this embodiment, the thickness B is set to an appropriate value in the upper parallel plate 2 and the lower parallel plate 3 so that the maximum direction of the radiation is on the + y axis. FIG. 5 shows a radiation pattern when the thickness B is set to 0.058λ on the upper parallel plate 2 and the lower parallel plate 3, where (a) is an xy plane and (b) is y. -Z plane characteristic. At this time, the value of r x on the short axis is 0.52λ, and the value of r y on the long axis is 0.94λ. Other conditions are the same as in FIG.

上記のように上部平行板２及び下部平行板３に厚みを加えることによって、ビームの最大放射方向を＋ｙ軸方向とすることができた。   By adding thickness to the upper parallel plate 2 and the lower parallel plate 3 as described above, the maximum radiation direction of the beam could be set to the + y axis direction.

なお、上記実施形態では、上部平行板２及び下部平行板３の厚さＢを０．０５８λに設定した場合について示したが、その他、例えば０．０１〜０．５λの範囲において任意に設定することができる。   In the above-described embodiment, the case where the thickness B of the upper parallel plate 2 and the lower parallel plate 3 is set to 0.058λ has been described. However, the thickness is arbitrarily set in a range of 0.01 to 0.5λ, for example. be able to.

上記実施形態で示したように上部平行板及び下部平行板を半楕円形状とすることにより、水平面及び垂直面における放射特性を半円ラジアルアンテナより更に広角特性とすることができ、且つ構成も非常に簡単である。このため例えば無線ＬＡＮ用アンテナ等、広角特性が要求されるものに使用して大きな効果を発揮することができる。   As shown in the above embodiment, by making the upper parallel plate and the lower parallel plate into a semi-elliptical shape, the radiation characteristics in the horizontal plane and the vertical plane can be made wider than the semicircular radial antenna, and the configuration is also very Easy to be. For this reason, for example, it can be used for an antenna for which a wide-angle characteristic is required, such as a wireless LAN antenna, and can exert a great effect.

本発明の一実施形態に係る半楕円形状アンテナの構成を示す外観斜視図である。1 is an external perspective view showing a configuration of a semi-elliptical antenna according to an embodiment of the present invention. 同実施形態における断面図である。It is sectional drawing in the same embodiment. 同実施形態における給電部分を示す図である。It is a figure which shows the electric power feeding part in the embodiment. 同実施形態において、上部平行板及び下部平行板の厚みを実質的に０とした場合の放射特性を示す図である。In the same embodiment, it is a figure which shows the radiation characteristic when the thickness of an upper parallel plate and a lower parallel plate is set to 0 substantially. 同実施形態において、上部平行板及び下部平行板の厚みを加えたときの放射特性を示す図である。In the same embodiment, it is a figure which shows a radiation characteristic when the thickness of an upper parallel plate and a lower parallel plate is added.

符号の説明Explanation of symbols

１…半楕円形状アンテナ、２…上部平行板、３…下部平行板、４…短絡壁、５…ラジアル導波路、１１…給電ピン、１２…同軸コネクタ。   DESCRIPTION OF SYMBOLS 1 ... Semi-elliptical antenna, 2 ... Upper parallel plate, 3 ... Lower parallel plate, 4 ... Short-circuit wall, 5 ... Radial waveguide, 11 ... Feeding pin, 12 ... Coaxial connector.

Claims (1)

半楕円形状の厚さが０．０１λ〜０．５λに設定された、上部平行板及び下部平行板を所定の間隔を保って対向配置して構成するラジアル導波路と、前記上部平行板及び下部平行板の直線端部を短絡する短絡壁と、前記下部平行板の前記短絡壁側中心部近傍に設けられる給電ピンとを具備したことを特徴とする半楕円形状アンテナ。 A radial waveguide having a semi-elliptical thickness set to 0.01λ to 0.5λ and configured by arranging an upper parallel plate and a lower parallel plate facing each other at a predetermined interval, and the upper parallel plate and the lower parallel plate. A semi-elliptical antenna comprising: a short-circuit wall that short-circuits a straight end portion of a parallel plate; and a feed pin provided in the vicinity of the central portion of the lower parallel plate on the short-circuit wall side.
JP2003295338A 2003-08-19 2003-08-19 Semi-elliptical antenna Expired - Fee Related JP4083646B2 (en)

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