JP4002034B2 - Foreign object detector - Google Patents

Foreign object detector Download PDF

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Publication number
JP4002034B2
JP4002034B2 JP18541199A JP18541199A JP4002034B2 JP 4002034 B2 JP4002034 B2 JP 4002034B2 JP 18541199 A JP18541199 A JP 18541199A JP 18541199 A JP18541199 A JP 18541199A JP 4002034 B2 JP4002034 B2 JP 4002034B2
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Prior art keywords
phase
reaction signal
article
signal
determination
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JP2001013260A (en
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治範 得津
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Ishida Co Ltd
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Ishida Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、パッケージする物品またはパッケージされた物品(以下、単に「物品」という)内に含まれている金属片などの異物の有無を検出する異物検出機に関する。
【0002】
【従来の技術】
従来の異物検出機は、交番磁界の中を検出対象物である物品をコンベアで搬送し、その搬送方向に並べて配置された2つの検出コイルに誘起される起電力を差動増幅して位相検波し、この位相検波信号がある判定レベルを超えると異物混入と判断する。このとき、位相検波のための設定位相は、物品の影響を避けるために、物品だけの時に位相検波信号が最小になる値に設定されている。ある物品に対する位相と位相検波信号の出力の関係を示すと、図4の曲線Bのようになる。この場合、設定位相を物品による位相検波信号が最小になるディップ点dとする。これに対して、異物の混入した物品の位相と位相検波信号の出力の関係を示すと、曲線Aのようになる。ここで明らかなように、設定位相点であるディップ点dでは、信号Aが信号Bよりレベルが高く、この間に判定レベルを設定することで異物検出が可能となる。
【0003】
また、ディップ点dの位相を、判定に用いる位相点(以下、「判定位相点」という)に自動的に設定する異物検出機も知られている。
【0004】
しかし、物品によってはディップ点dで必ずしも異物の検出感度が最大ではない場合があり、また、物品が水分や塩分を多く含む漬物などの食品では、図5に示すように、信号Bのディップ点dが明瞭でない場合がある。このような場合、従来は信号Aと信号Bのレベル差の大きい判定位相点を試行錯誤的に求めるか、または位相点を順次ずらして出力信号を測定し、図5に示す信号Aと信号Bの位相−出力特性曲線を作成し、この位相−出力特性曲線から信号Aが信号Bよりもレベルが高く、かつ、両信号のレベルの差がレベル差が最も大きくなる位相点を求めて、判定位相点に設定していた。
【0005】
【発明が解決しようとする課題】
しかし、前記従来のディップ点が明瞭でない物品の判定位相点の設定方法では、作業手間が多大になるという問題点があった。
【0006】
本発明は、前記のような課題を解決して、自動的に最適な位相点を検出して判定位相点に設定できる異物検出機を得ることを目的とする。
【0007】
【課題を解決するための手段】
上記目的を達成するために、本発明に係る異物検出機は、交番磁界中に物品を通過させ、その物品に影響された磁界に基づいて物品に対する反応信号を発生する反応信号発生回路と、所定の異物またはこの異物を付加した物品に対する第1テスト反応信号の位相−出力特性を記憶する第1記憶手段と、前記異物を付加していない物品に対する第2テスト反応信号の位相−出力特性を記憶する第2記憶手段と、前記第1テスト反応信号が第2テスト反応信号よりもレベルが高く、かつ両信号のレベル差が最大となる位相点を判定位相点に設定する最適位相設定手段と、前記物品の異物検出動作時に前記判定位相点における反応信号のレベルから異物の有無を判定する判定手段とを備えたものである。
上記構成によれば、第1記憶手段に記憶された第1テスト反応信号が、第2記憶手段に記憶された第2テスト反応信号よりもレベルが高く、かつ両信号のレベル差が最大となる位相点を判定位相点に設定し、物品の異物検出時に、判定位相点における反応信号のレベルから異物の有無を判定することができる。
【0008】
本発明の好ましい実施形態においては、前記所定の異物を付加した物品を前記交番磁界中を通過させたときに前記反応信号発生回路から得られる信号を第1テスト反応信号として前記第1記憶手段に記憶させる第1書込手段、および/または、前記異物を付加していない物品を前記交番磁界中を通過させたときに前記反応信号発生回路から得られる信号を第2テスト反応信号として前記第2記憶手段に記憶させる第2書込手段を備えている。
【0009】
上記構成によれば、第1記憶手段に第1テスト反応信号の位相−出力特性を記憶し、第2記憶手段に第2テスト反応信号の位相−出力特性を記憶するので、最適位相設定手段において前記第1テスト反応信号と前記第2テスト反応信号の同じ位相点のレベル値を読み出すことで、前記第1テスト反応信号が前記第2テスト反応信号よりもレベルが高く、かつ両信号のレベル差が最大となる位相点の検出を自動的に行うことができる。
【0010】
【発明の実施の形態】
以下、本発明の実施形態を図面に基づいて具体的に説明する。
図1に、本発明の一実施形態に係る異物検出機の構成を示す。図において、異物検出機1は、コンベアCによる物品Pの搬送路に交番磁界Eを印加し、その交番磁界Eの中を通過する物品Pに対する反応信号を発生する反応信号発生回路2を備えている。
【0011】
この異物検出機は、さらに、前記反応信号を位相検波した位相検波信号を出力する位相検波器3と、位相検波信号を増幅する増幅器4と、この増幅器4から出力される位相検波信号を異物検出動作時と後述するテスト時とで切り換える第1スイッチ5と、テスト時に所定の異物入りの物品に対する第1位相検波信号Aと異物なしの物品に対する第2位相検波信号Bとを切り換える第2スイッチ6と、第1および第2の記憶手段7A,7Bと、第1位相検波信号Aの位相−出力特性を第1記憶手段7Aに記憶させる第1書込手段8Aと、第2位相検波信号Bの位相−出力特性を第2記憶手段7Bに記憶させる第2書込手段8Bと、稼働時の判定基準となる判定位相点を自動的に設定する最適位相設定手段9と、設定された判定位相点で検波動作するように位相検波器3の検波位相を設定する検波位相設定器13と、判定レベルを自動的に設定する判定レベル設定手段12と、稼働時に前記判定位相点と判定レベルに基づいて合否(異物の有無)を判定する判定手段10と、各種の情報を表示する表示装置11とを備えている。
【0012】
前記反応信号発生回路2は、送信コイル21に励磁電流を流して交番磁界Eを発生する磁界発生器22と、送信コイル21および送信コイル21から発生する交番磁界Eの磁束を等量受ける位置に配置された一対の受信コイル23,24により形成される磁気センサ25と、受信コイル23,24に誘起された電圧信号が入力される差動増幅器26とを備えている。
【0013】
異物が付加された物品Pが反応信号発生回路2の交番磁界E中を通過したとき、前記磁気センサ25の2つの受信コイル23,24に交叉する磁束が不平衡となって受信コイル23,24の誘起電圧に差を生じる。この差電圧信号は差動増幅器26で増幅され、この増幅された差電圧信号は位相検波器3で位相検波され、この位相検波信号は増幅器4で増幅されて第1スイッチ5に出力される。
【0014】
次に、本実施形態の、物品Pの中に異物が有るか否かを判定するための判定基準である「判定位相点」および「判定レベル」の設定動作を説明する。
まず、第1スイッチ5を端子a側に切り換え、さらに、第2スイッチ6を端子a側に切り換え、肉、漬物などの商品にテスト用として所定の材質および寸法を有する異物を付加した物品P(テストピース)を、コンベアCで搬送して、第1記憶手段7Aに第1テスト反応信号Aの位相−出力特性を記憶させる。次に、第2スイッチ6を、端子b側に切り換え、異物を付加していない物品P(テストピース)をコンベアCで搬送して、第2記憶手段7Bに第2テスト反応信号Bの位相−出力特性を記憶させる。
【0015】
次に、最適位相設定手段9は、第1記憶手段7Aと第2記憶手段7Bとから同じ位相点のレベル値を順次読み出して、第1記憶手段7Aに記憶されたレベル値が第2記憶手段7Bに記憶されたレベル値よりも高く、かつ両者のレベル差が最大となる位相点を探し、その位相点を判定位相点に設定する。同時に判定レベル設定手段12は、異物の入っていない第2記憶手段7Bからの信号により異物混入と判断しないように、増幅器4のゲインを設定する。
以下、この最適位相設定動作を図2のフローチャートを参照して具体的に説明する。
【0016】
最適位相設定手段9は、まず、ステップS1で記憶している差信号のレベルを0にリセットし、S2で位相を0°(図1の送信コイル21と受信コイル23,24の電圧位相が同一)にリセットする。つぎにS3とS4で第1記憶手段7Aと第2記憶手段7Bとから、位相が0°の第1テスト反応信号Aのレベル値と第2テスト反応信号Bのレベル値を読み出し、S5で両信号のレベル差を算出してS6でその位相とレベル差を一旦記憶する。次に、S7で位相が180°でないときはS8で位相点を1ステップ(例えば1°)進めてS3に戻り、S3とS4で第1テスト反応信号Aと第2テスト反応信号Bのレベル値を読み出し、S5で両信号のレベル差を算出し、記憶しているレベル差と比較して大きい方をS6で残す、という動作を、位相が180°になるまで順次実行し、位相が180°になったときS6に記憶している最大レベル差の位相を「判定位相点」に設定する。判定レベル設定手段12は、この最大レベル差のほぼ1/2のレベル値を「判定レベル」に設定する。
図3は上記のようにして設定された判定位相点と判定レベルを示している。
【0017】
上記のようにして判定位相点と判定レベルが設定されたのち、実際の物品Pの検出動作が開始される。このとき、第1スイッチ5は接点b側に接続され、得られた検出動作時の反応信号が判定手段10に入力されて前記判定位相点のレベル値が判定レベル値と比較され、反応信号のレベル値が判定レベル値より小さいときは合格(異物なし)、大きいときは不合格(異物あり)の判定がなされて、表示装置11に表示される。
【0018】
本実施形態によれば、異物を付加した物品と、異物を付加していない物品を1回ずつコンベアで搬送するだけで、判定位相点と判定レベルが自動的に設定されるので、判定基準の設定作業が大幅に軽減される。
【0019】
また、設定される判定位相点は、第1テスト反応信号Aが第2テスト反応信号Bよりもレベルが高く、かつ両信号のレベル差が最大となる位相点であるので、判定精度が向上する。
【0020】
なお、前記実施形態では、第1テスト反応信号の位相−出力特性を得るのに、異物を付加した物品を用いたが、物品の種類によっては、異物のみからなるテストピースを流したときの第1テスト反応信号と物品のみからなるテストピースを流したときの第2テスト反応信号とを用いて、同様に最適の判定位相点を求めることができる。
【0021】
また、前記実施形態では、テストピースを実際に流して第1および第2のテスト反応信号を得ているので、異物検出機ごとの出力特性の相違に影響されることなく、判定レベルを設定できるが、異物検出機ごとの出力特性の差異を無視できるときは、予め第1テスト反応信号のデータを、前記第1の記憶手段7Aに直接記憶させておいてもよい。
【0022】
さらに、前記実施形態では、異物をスチールボールのような磁性金属としたが、ステンレスのような非磁性金属であっても同様に適用でき、同様の効果が得られる。また、金属の種類を変えて複数回テストし、第1テスト反応信号を複数記憶し、第2テスト反応信号に対して、第1テスト反応信号の最も望ましい出力が得られる位相を求めることもできる。
【0023】
【発明の効果】
以上のように、本発明に係る異物検出機は、所定の異物を付加した物品に対する第1テスト反応信号の位相−出力特性を第1記憶手段に記憶させ、前記異物を付加していない物品に対する第2テスト反応信号の位相−出力特性を第2記憶手段に記憶させ、最適位相設定手段で、前記第1記憶手段と第2記憶手段から前記第1テスト反応信号と第2テスト反応信号の同じ位相点のレベル値を読み出して、レベル差を算出し、各位相点のレベル差を比較し、第1テスト反応信号が第2テスト反応信号よりもレベルが高く、かつ両信号のレベル差が最大となる位相点を検出し、その位相点を判定位相点に設定し、稼働時の物品内の異物の有無の判定を、前記判定位相点の反応信号のレベルで判定するように構成したものであるから、最大レベル差の得られる位相点を自動的に検出して判定位相点に設定されるので、判定基準の設定作業が軽減されるとともに、判定精度が向上する。
【図面の簡単な説明】
【図1】本発明の一実施形態に係る異物検出機の構成を示すブロック図である。
【図2】本実施形態の最適位相設定手段の判定位相点の設定手順を示すフローチャートである。
【図3】本実施形態の判定レベルを説明するための第1テスト反応信号と第2テスト反応信号の位相−出力特性図である。
【図4】従来の判定位相点を示す第1テスト反応信号と第2テスト反応信号の位相−出力特性図である。
【図5】他の従来例の判定位相点を示す第1テスト反応信号と第2テスト反応信号の位相−出力特性図である。
【符号の説明】
1…異物検出機、2…反応信号発生回路、3…位相検波器、4…増幅器、5…第1スイッチ、6…第2スイッチ、7A…第1記憶手段、7B…第2記憶手段、8A…第1書込手段、8B…第2書込手段、9…最適位相設定手段、10…判定手段、11…表示装置、12…判定レベル設定手段。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a foreign object detector that detects the presence or absence of foreign objects such as metal pieces contained in an article to be packaged or a packaged article (hereinafter simply referred to as “article”).
[0002]
[Prior art]
A conventional foreign object detector conveys an article as a detection object in an alternating magnetic field by a conveyor, and differentially amplifies the electromotive force induced in two detection coils arranged side by side in the conveyance direction to perform phase detection. When the phase detection signal exceeds a certain determination level, it is determined that foreign matter is mixed. At this time, the set phase for phase detection is set to a value that minimizes the phase detection signal when only the article is used in order to avoid the influence of the article. The relationship between the phase and the output of the phase detection signal for an article is as shown by curve B in FIG. In this case, the set phase is the dip point d at which the phase detection signal from the article is minimized. On the other hand, the relationship between the phase of the article mixed with foreign matter and the output of the phase detection signal is shown as curve A. As can be seen, at the dip point d, which is the set phase point, the level of the signal A is higher than that of the signal B, and foreign matter can be detected by setting the determination level during this time.
[0003]
A foreign object detector that automatically sets the phase of the dip point d to a phase point used for determination (hereinafter referred to as “determination phase point”) is also known.
[0004]
However, depending on the article, the detection sensitivity of the foreign matter may not necessarily be the maximum at the dip point d, and the dip point of the signal B as shown in FIG. d may not be clear. In such a case, conventionally, a determination phase point having a large level difference between the signal A and the signal B is obtained by trial and error, or the output signal is measured by sequentially shifting the phase point, and the signal A and the signal B shown in FIG. A phase-output characteristic curve is created, and from this phase-output characteristic curve, the phase point where the level of the signal A is higher than that of the signal B and the level difference between the two signals is the largest is determined. The phase point was set.
[0005]
[Problems to be solved by the invention]
However, the conventional method for setting the determination phase point of an article whose dip point is not clear has a problem in that it takes a lot of work.
[0006]
An object of the present invention is to solve the above-described problems and to obtain a foreign object detector that can automatically detect an optimal phase point and set it as a determination phase point.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, a foreign object detector according to the present invention includes a reaction signal generation circuit that passes an article in an alternating magnetic field and generates a reaction signal for the article based on the magnetic field affected by the article, and a predetermined signal The first storage means for storing the phase-output characteristic of the first test reaction signal for the foreign object or the article to which the foreign object is added, and the phase-output characteristic of the second test reaction signal for the article to which the foreign object is not added Second storage means, and an optimum phase setting means for setting a phase point where the level of the first test reaction signal is higher than that of the second test reaction signal and the level difference between the two signals is the maximum as a determination phase point; Determination means for determining the presence or absence of foreign matter from the level of the reaction signal at the judgment phase point during the foreign matter detection operation of the article.
According to the above configuration, the first test reaction signal stored in the first storage means has a higher level than the second test reaction signal stored in the second storage means, and the level difference between the two signals is maximized. By setting the phase point as a determination phase point, the presence or absence of foreign matter can be determined from the level of the reaction signal at the determination phase point when foreign matter is detected in the article.
[0008]
In a preferred embodiment of the present invention, a signal obtained from the reaction signal generation circuit when the article to which the predetermined foreign matter is added is passed through the alternating magnetic field is stored in the first storage means as a first test reaction signal. A signal obtained from the reaction signal generation circuit when the first writing means to be stored and / or the article to which the foreign matter is not added is passed through the alternating magnetic field is used as the second test reaction signal as the second test reaction signal. Second writing means for storing in the storage means is provided.
[0009]
According to the above configuration, the phase-output characteristic of the first test reaction signal is stored in the first storage unit, and the phase-output characteristic of the second test reaction signal is stored in the second storage unit. By reading the level value of the same phase point of the first test reaction signal and the second test reaction signal, the first test reaction signal is higher in level than the second test reaction signal, and the level difference between the two signals It is possible to automatically detect the phase point at which becomes the maximum.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be specifically described below with reference to the drawings.
FIG. 1 shows a configuration of a foreign object detector according to an embodiment of the present invention. In the figure, a foreign object detector 1 includes a reaction signal generation circuit 2 that applies an alternating magnetic field E to a conveyance path of an article P by a conveyor C and generates a reaction signal for the article P passing through the alternating magnetic field E. Yes.
[0011]
The foreign object detector further includes a phase detector 3 for outputting a phase detection signal obtained by phase detection of the reaction signal, an amplifier 4 for amplifying the phase detection signal, and detecting a phase detection signal output from the amplifier 4 as a foreign object. A first switch 5 that switches between an operation and a test that will be described later, and a second switch 6 that switches between a first phase detection signal A for an article containing a predetermined foreign object and a second phase detection signal B for an article having no foreign object during the test. The first and second storage means 7A, 7B, the first writing means 8A for storing the phase-output characteristics of the first phase detection signal A in the first storage means 7A, and the second phase detection signal B A second writing means 8B for storing the phase-output characteristics in the second storage means 7B, an optimum phase setting means 9 for automatically setting a judgment phase point serving as a judgment criterion during operation, and a set judgment phase point Detection operation at Detection phase setting unit 13 for setting the detection phase of phase detector 3, determination level setting means 12 for automatically setting the determination level, and pass / fail (foreign matter) based on the determination phase point and the determination level during operation. Determination means 10 and a display device 11 that displays various types of information.
[0012]
The reaction signal generating circuit 2 is provided at a position that receives an equal amount of magnetic flux of the magnetic field generator 22 that generates an alternating magnetic field E by passing an exciting current through the transmitting coil 21 and the alternating magnetic field E generated from the transmitting coil 21 and the transmitting coil 21. A magnetic sensor 25 formed by a pair of receiving coils 23 and 24 arranged and a differential amplifier 26 to which a voltage signal induced in the receiving coils 23 and 24 is input.
[0013]
When the article P to which the foreign matter is added passes through the alternating magnetic field E of the reaction signal generation circuit 2, the magnetic flux crossing the two receiving coils 23 and 24 of the magnetic sensor 25 becomes unbalanced and the receiving coils 23 and 24 A difference is caused in the induced voltage. The difference voltage signal is amplified by the differential amplifier 26, the amplified difference voltage signal is phase-detected by the phase detector 3, and the phase detection signal is amplified by the amplifier 4 and output to the first switch 5.
[0014]
Next, the setting operation of “determination phase point” and “determination level”, which are determination criteria for determining whether or not there is a foreign substance in the article P, according to the present embodiment will be described.
First, the first switch 5 is switched to the terminal a side, the second switch 6 is switched to the terminal a side, and an article P () in which a foreign material having a predetermined material and dimensions is added to a product such as meat or pickles for testing. The test piece) is conveyed by the conveyor C, and the phase-output characteristic of the first test reaction signal A is stored in the first storage means 7A. Next, the second switch 6 is switched to the terminal b side, the article P (test piece) to which no foreign matter is added is conveyed by the conveyor C, and the phase − of the second test reaction signal B is transferred to the second storage means 7B. Store output characteristics.
[0015]
Next, the optimum phase setting unit 9 sequentially reads out the level value of the same phase point from the first storage unit 7A and the second storage unit 7B, and the level value stored in the first storage unit 7A is the second storage unit. A phase point that is higher than the level value stored in 7B and has the maximum level difference between the two is searched, and that phase point is set as a determination phase point. At the same time, the determination level setting means 12 sets the gain of the amplifier 4 so as not to determine that foreign matter is mixed in based on a signal from the second storage means 7B containing no foreign matter.
The optimum phase setting operation will be specifically described below with reference to the flowchart of FIG.
[0016]
The optimum phase setting means 9 first resets the level of the difference signal stored in step S1 to 0, and the phase is 0 ° in S2 (the voltage phases of the transmission coil 21 and the reception coils 23 and 24 in FIG. 1 are the same). Reset to). Next, in S3 and S4, the level value of the first test reaction signal A and the level value of the second test reaction signal B having a phase of 0 ° are read from the first storage means 7A and the second storage means 7B, and both in S5. The signal level difference is calculated, and the phase and level difference are temporarily stored in S6. Next, when the phase is not 180 ° in S7, the phase point is advanced by one step (for example, 1 °) in S8 and the process returns to S3, and the level values of the first test reaction signal A and the second test reaction signal B in S3 and S4. Are read out in S5, the level difference between the two signals is calculated in S5, and the larger one compared to the stored level difference is left in S6 until the phase reaches 180 °. When it becomes, the phase of the maximum level difference stored in S6 is set to the “determination phase point”. The determination level setting means 12 sets a level value that is approximately ½ of this maximum level difference to the “determination level”.
FIG. 3 shows the determination phase points and determination levels set as described above.
[0017]
After the determination phase point and the determination level are set as described above, the actual operation for detecting the article P is started. At this time, the first switch 5 is connected to the contact b side, and the obtained reaction signal at the time of the detection operation is input to the determination means 10, the level value of the determination phase point is compared with the determination level value, and the response signal When the level value is smaller than the determination level value, the pass (no foreign matter) is judged, and when the level value is larger, the judgment (existing foreign matter) is made and displayed on the display device 11.
[0018]
According to the present embodiment, the determination phase point and the determination level are automatically set only by conveying the article with the foreign substance added and the article with no foreign substance added to the conveyor one by one. Setting work is greatly reduced.
[0019]
The determination phase point to be set is a phase point where the first test reaction signal A is higher in level than the second test reaction signal B and the level difference between the two signals is maximized, so that the determination accuracy is improved. .
[0020]
In the above-described embodiment, an article to which foreign matter is added is used to obtain the phase-output characteristics of the first test reaction signal. However, depending on the type of the article, the first test reaction signal when a test piece made only of foreign matter is flowed is used. Using the 1 test reaction signal and the second test reaction signal when a test piece made of only an article is flowed, the optimum determination phase point can be similarly obtained.
[0021]
In the embodiment, since the first and second test reaction signals are obtained by actually flowing the test piece, the determination level can be set without being affected by the difference in the output characteristics of each foreign matter detector. However, when the difference in output characteristics for each foreign matter detector can be ignored, the data of the first test reaction signal may be stored directly in the first storage means 7A in advance.
[0022]
Furthermore, in the embodiment, the foreign material is a magnetic metal such as a steel ball, but a nonmagnetic metal such as stainless steel can be applied in the same manner and the same effect can be obtained. It is also possible to test a plurality of times by changing the type of metal, store a plurality of first test reaction signals, and obtain a phase at which the most desirable output of the first test reaction signal is obtained with respect to the second test reaction signal. .
[0023]
【The invention's effect】
As described above, the foreign object detector according to the present invention stores the phase-output characteristic of the first test reaction signal for the article to which the predetermined foreign substance is added in the first storage unit, and the article to which the foreign substance is not added. The phase-output characteristic of the second test reaction signal is stored in the second storage means, and the optimum phase setting means is the same as the first test reaction signal and the second test reaction signal from the first storage means and the second storage means. Read the level value of the phase point, calculate the level difference, compare the level difference of each phase point, the first test reaction signal is higher than the second test reaction signal, and the level difference between both signals is the maximum The phase point is detected, the phase point is set as a determination phase point, and the presence / absence of foreign matter in the article during operation is determined based on the level of the reaction signal at the determination phase point. Because there is a maximum level difference Since it is set to the determination signal point phase point that is automatically detected and, together with the setting operation of the criterion is reduced, the determination accuracy is improved.
[Brief description of the drawings]
FIG. 1 is a block diagram showing a configuration of a foreign object detector according to an embodiment of the present invention.
FIG. 2 is a flowchart showing a determination phase point setting procedure of an optimum phase setting unit of the present embodiment.
FIG. 3 is a phase-output characteristic diagram of a first test reaction signal and a second test reaction signal for explaining a determination level of the present embodiment.
FIG. 4 is a phase-output characteristic diagram of a first test reaction signal and a second test reaction signal showing a conventional determination phase point.
FIG. 5 is a phase-output characteristic diagram of a first test reaction signal and a second test reaction signal showing determination phase points of another conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Foreign substance detector, 2 ... Reaction signal generator circuit, 3 ... Phase detector, 4 ... Amplifier, 5 ... 1st switch, 6 ... 2nd switch, 7A ... 1st memory | storage means, 7B ... 2nd memory | storage means, 8A ... 1st writing means, 8B ... 2nd writing means, 9 ... Optimum phase setting means, 10 ... Determination means, 11 ... Display device, 12 ... Determination level setting means.

Claims (2)

交番磁界中に物品を通過させ、その物品に影響された磁界に基づいて物品に対する反応信号を発生する反応信号発生回路と、
所定の異物またはこの異物を付加した物品に対する第1テスト反応信号の位相−出力特性を記憶する第1記憶手段と、
前記異物を付加していない物品に対する第2テスト反応信号の位相−出力特性を記憶する第2記憶手段と、
前記第1テスト反応信号が第2テスト反応信号よりもレベルが高く、かつ両信号のレベル差が最大となる位相点を判定位相点に設定する最適位相設定手段と、前記物品の異物検出動作時に前記判定位相点における反応信号のレベルから異物の有無を判定する判定手段とを備えた異物検出機。
A reaction signal generating circuit for passing an article through an alternating magnetic field and generating a reaction signal for the article based on a magnetic field influenced by the article;
First storage means for storing a phase-output characteristic of a first test reaction signal for a predetermined foreign object or an article to which the foreign object is added;
Second storage means for storing a phase-output characteristic of a second test reaction signal for an article to which the foreign matter is not added;
An optimum phase setting means for setting a phase point where the level of the first test reaction signal is higher than that of the second test reaction signal and the level difference between the two signals is the maximum as a determination phase point; A foreign object detector comprising: determination means for determining the presence or absence of foreign substances from the level of the reaction signal at the determination phase point.
請求項1において、
前記所定の異物を付加した物品を前記交番磁界中を通過させたときに前記反応信号発生回路から得られる信号を第1テスト反応信号として前記第1記憶手段に記憶させる第1書込手段、および/または、
前記異物を付加していない物品を前記交番磁界中を通過させたときに前記反応信号発生回路から得られる信号を第2テスト反応信号として前記第2記憶手段に記憶させる第2書込手段を備えている異物検出機。
In claim 1,
First writing means for storing a signal obtained from the reaction signal generating circuit as a first test reaction signal in the first storage means when the article to which the predetermined foreign matter has been added is passed through the alternating magnetic field; and Or
A second writing means for storing a signal obtained from the reaction signal generation circuit in the second storage means as a second test reaction signal when the article to which the foreign matter is not added is passed through the alternating magnetic field; Foreign object detector.
JP18541199A 1999-06-30 1999-06-30 Foreign object detector Expired - Fee Related JP4002034B2 (en)

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JP4570820B2 (en) * 2001-07-03 2010-10-27 株式会社イシダ Metal detector
EP1602943B1 (en) * 2003-03-12 2014-06-18 Anritsu Industrial Solutions Co.,Ltd. Metal detector
JP4983194B2 (en) * 2006-10-10 2012-07-25 富士ゼロックス株式会社 Object detection device
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