JP3998639B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device. More specifically, the present invention relates to a semiconductor light emitting device using a nitride-based semiconductor, and relates to a method for manufacturing a semiconductor light emitting device in which a high-quality crystal can be obtained by easily and reliably separating a sapphire substrate.

  In recent years, semiconductor light emitting devices such as light emitting diodes (LEDs) and semiconductor lasers have been used in various fields such as home appliances, OA equipment, communication equipment, and industrial measuring instruments. For example, development of short-wavelength semiconductor lasers is focused on for the purpose of application to high-density optical disk recording and the like that are expected to be used in many fields.

  Currently, a red semiconductor laser is used, and the recording density is improved as compared with the conventional infrared semiconductor laser. This red semiconductor laser is a light-emitting element in the 600 nm band using an InGaAlP-based material, and its characteristics have been improved to a level at which both reading and writing of an optical disk are possible, and has already been put into practical use.

  However, the red semiconductor laser using this material system has many material problems, such as difficulty in reducing crystal defects and high operating voltage for next-generation optical disc recording and the like. Further, even if the oscillation wavelength is short, it is about 460 nm, and oscillation at the 420 nm level required by the system is difficult due to physical properties.

  On the other hand, blue semiconductor lasers are being developed with the aim of further improving the recording density. Semiconductor lasers using II-VI group materials have already been confirmed to oscillate. However, its reliability is limited to about 100 hours, so there are many barriers to practical use, and it is difficult to set the oscillation wavelength to 480 nm or less. There are many important limits.

  In contrast, a nitride-based semiconductor laser containing GaN (gallium nitride) can theoretically be shortened to 350 nm or less, and has been reported to oscillate at 400 nm. Regarding the reliability, it has been confirmed that the LED has a reliability of 10,000 hours or more. Recently, laser oscillation at room temperature has been confirmed. As described above, the nitride semiconductor system is a material having excellent characteristics that satisfy conditions required in various applications such as a next-generation optical disk recording light source.

In the present application, “nitride-based semiconductor” is expressed by a chemical formula of B _x In _y Al _z Ga _(1-xyz) N (O ≦ x ≦ 1, O ≦ y ≦ 1, O ≦ z ≦ 1). III-V group compound semiconductors, and as group V elements, in addition to N, mixed crystals containing phosphorus (P), arsenic (As), and the like are also included.

  However, conventional light emitting devices using nitride semiconductors have various problems described in detail below.

  That is, a conventional light emitting element using a nitride semiconductor is generally epitaxially grown on a sapphire substrate. However, since the lattice constants of the sapphire substrate and the nitride-based semiconductor are significantly different, many crystal defects are generated in the grown crystal. Such a crystal defect essentially becomes an impediment to improvement of various device characteristics and device lifetime.

  Moreover, since it forms on an insulating sapphire substrate, it is necessary to form both the n-side electrode and the p-side electrode on the epitaxial growth surface side. Therefore, a part of the p-type layer, the active layer, and the n-type layer is removed by etching, and an n-side electrode is formed on the n-type layer. However, in this structure, a portion that actually operates as an element is formed on a thick sapphire substrate, and it is difficult to cleave to create a resonator surface necessary for the laser.

  In order to improve the heat dissipation of the element, the element is usually in close contact with the heat sink. In this structure, even if the sapphire side is in close contact with the heat sink, the heat conductivity of sapphire is low, so sufficient heat dissipation is ensured. Can not do it. On the contrary, when the electrode side is brought into close contact with the heat sink, the thermal resistance is reduced, but this element in which the electrode is installed in the same direction with respect to the substrate is difficult to produce and the yield is poor.

  In addition, a sapphire substrate is attached to the side not in contact with the heat sink, and the heat dissipation is still poor.

  Furthermore, as long as the sapphire substrate is attached, it is necessary to flow the current injected from the electrodes in the lateral direction of the element, and the element resistance increases.

  Further, the geometrically closest path between the p-side electrode and the n-side electrode is the surface of the element, and a large amount of leakage current is generated.

  On the other hand, a method of growing a nitride-based semiconductor crystal in a thick film by a hydride chemical deposition method (H-CVE method) using HCl (hydrochloric acid) as a transport carrier has recently begun. However, since a sapphire substrate is used as the growth substrate, the grown crystal contains many crystal defects, which is one of the factors that hinder the improvement of device characteristics of the light emitting device formed thereon.

  At this time, a lateral growth method in which a mask is locally grown and grown by using quartz has been started. However, the formation of small-angled boundaries, defects, and voids are observed in the portion grown on the quartz mask.

  On the other hand, in order to avoid the various problems as described above, a technique has been proposed in which GaN is formed to approximately 100 μm on a sapphire substrate, the sapphire substrate is removed, and the obtained GaN film is used as a pseudo substrate. However, the polishing method usually used for removing the hard sapphire substrate has a problem that the throughput is low and abnormal cracking occurs during polishing.

  The present invention has been made in view of various problems. That is, the object is to provide a method for manufacturing a nitride-based semiconductor light-emitting device having good cleavage, heat dissipation, leak pressure resistance, etc. by separating a sapphire substrate easily and reliably with high reproducibility. It is in.

According to one aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device, the step of providing a lift-off layer including at least one of crystal defects or voids on a substrate, and a nitride-based semiconductor on the lift-off layer. And a step of separating the substrate and the nitride-based semiconductor layer, the lift-off layer is formed of an InGaN layer, and the InGaN layer includes the void, A density of 10 ⁷ / cm ² or more and 10 ⁹ / cm ² or less is provided.

  The present invention is implemented in the form as described above, and has the effects described below.

  First, according to the present invention, the sapphire substrate can be easily and reliably peeled off, so that it is possible to eliminate a decrease in crystallinity due to a lattice shift from the sapphire substrate. As a result, it is possible to obtain crystals with much higher quality than before, improving the electrical and optical characteristics of the semiconductor light emitting device and extending the lifetime.

  Further, according to the present invention, by cleaving the sapphire substrate, cleavage for forming the end face of the laser can be easily and reliably performed. That is, a mirror-like end face can be formed more stably than a conventional nitride semiconductor laser element, and the laser oscillation characteristics can be greatly improved.

  Further, in the conventional element formed on the sapphire substrate, the mesa is formed and the p-side and n-side electrodes are taken from the same surface. However, according to this embodiment, the leakage current is reduced. .

  Further, since there is no sapphire substrate having a different thermal expansion coefficient from that of a nitride semiconductor, distortion due to heat generation during the operation of the laser does not occur, and the lifetime of the device is improved. Further, since there is no light reflection occurring at the sapphire substrate and the GaN interface, the oscillation mode is stable and the threshold value is also lowered.

  In addition, according to the present invention, the peeled sapphire substrate is hardly damaged by the substrate peeling, and can be reused for the next crystal growth. This makes it possible to produce a high-quality nitride-based semiconductor epitaxial crystal with few defects at a low cost.

  As described above in detail, according to the present invention, a semiconductor light emitting device having high performance and high reliability can be provided at low cost, and its usefulness is tremendous.

Embodiments of the present invention will be described below with reference to the drawings.
First, a method of peeling a substrate using a “lift-off layer” will be described as a first embodiment of the present invention.

  FIG. 1 is a process cross-sectional view illustrating a method for manufacturing a semiconductor light emitting element according to the first embodiment of the invention. That is, this figure shows a method of manufacturing a semiconductor laser using a nitride semiconductor.

  First, as shown in FIG. 1A, a GaN layer 12, an AlGaN layer 13, and an n-type GaN layer 14 are grown on a sapphire substrate 11 by MOCVD (metal organic chemical vapor deposition). Here, a buffer layer (not shown) may be provided between the substrate 11 and the GaN layer 12. The growth pressure of each layer is normal pressure, and the GaN layers 12 and 14 and the AlGaN layer 13 other than the buffer layer are basically in a temperature range of 1000 ° C. to 1100 ° C. in an atmosphere in which nitrogen, hydrogen, and ammonia are mixed. grown.

  Here, the Al composition of the AlGaN layer 13 is about 30%, and the layer thickness is increased so that cracks are formed on the entire surface of the growth layer. The AlGaN layer 13 having such a defect portion functions as a “lift-off layer” for peeling the substrate 11 as will be described in detail later.

  Next, as shown in FIG. 1B, an n-type GaN layer 15 is grown to a thickness of about 80 μm, and a multilayer structure 16 including a double heterostructure that is a main part of the semiconductor laser is grown. To do. Here, in order to grow the n-type GaN layer 15 to a layer thickness of about 80 μm, it is desirable to use a hydride VPE (Vapor Phase Epitaxy) method having a growth rate higher than that of the MOCVD method. On the other hand, when the multilayer structure portion 16 is grown, the MOCVD method can be used as in the conventional case.

  Next, as shown in FIG. 1C, the substrate 11 is peeled off. Specifically, after a mesaslife part of a semiconductor laser is formed by using a photolithography method or the like, the multilayer structure part 16 of the laser is faced down and attached to a jig 17 with wax or the like. Then, the substrate 11 can be easily peeled off by applying a stress by a method such as applying a jig to the side surface or the back surface of the substrate 11 for printing. Here, the peeling occurs in the vicinity of the “lift-off layer”, that is, the interface before and after the AlGaN layer 13.

  When the substrate 11 is peeled off, the p-side electrode 18 and the n-side electrode 19 are formed as shown in FIG. Further, a laser end face is formed by cleavage to form a chip.

  The laser multilayer structure 16 may be formed after the substrate 11 is peeled off. That is, after the n-type GaN layer 15 is grown by hydride VPE, the substrate 11 is peeled off as shown in FIG. 1C, and the multilayer structure 15 is grown using the obtained n-type GaN layer 15 as a new substrate. Alternatively, the electrodes 18 and 19 may be formed.

In the present embodiment, a mechanism capable of peeling the substrate 11 will be described below.
FIG. 2 is an enlarged cross-sectional view of the main part showing the GaN 12, AlGaN layer 13, and GaN layer 14 of FIG. In the present embodiment, cracks 20 </ b> A are generated due to lattice strain caused by Al (aluminum) when the AlGaN layer 13 is grown. In particular, the crack 20A is densified by setting the Al composition to 30% or more. According to the experiments by the present inventors, it has been found that the crack 20A often occurs in a hexagonal shape when observed in a plane.

  When the wafer is once held at the growth temperature after growing the AlGaN layer 13 in this way, a part of the GaN layer 12 below the crack 20A is etched by hydrogen contained in the growth atmosphere, and a void 20B is generated. When the n-type GaN layer 14 is grown thereon, the top of the crack 20A is filled and flattened by the two-dimensional growth mode, and the growth above this is not adversely affected.

  Due to the cracks 20 </ b> A and the gaps 20 </ b> B thus formed, the “lift-off layer”, that is, the interface of the AlGaN layer 13 becomes physically weak. For example, by applying a stress as described above, the substrate 11 can be peeled off using the crack 20A or the gap 20B as a trigger. In the present embodiment, in order to easily cause the substrate 11 to be peeled off, the Al composition of the AlGaN layer 13 that is the “lift-off layer” is preferably in the range of 10 to 30%. The layer thickness is preferably in the range of 0.1 to 1 μm. If the Al composition is lower than this, or if the layer thickness is thin, cracks are insufficient and the substrate 11 cannot be easily peeled off. If the Al composition is higher than this, or if the layer thickness is thicker than this, this This is because the tendency of the crystallinity of the nitride-based semiconductor layer grown thereon to deteriorate becomes significant.

  As a method for applying the stress, the substrate is peeled off by sharply lowering the temperature after the growth of the multilayer structure portion 16 in addition to the method using a jig. It can also be peeled off by using a method in which “scratch” is partly put on the back side of the sapphire substrate 11 with a dicer or the like. Furthermore, even if a wafer is put into an ultrasonic cleaning machine, it can be peeled off. Further, as will be described in detail later, laser light having a wavelength in the ultraviolet region is irradiated from the back surface side of the sapphire substrate 11, and local heat is generated by light absorption in the nitride-based semiconductor layer. It can also be peeled off by evaporation.

As the “lift-off layer” for peeling off the layer 13 in this embodiment, that is, the substrate 11, various materials that cause lattice distortion can be used besides AlGaN having a high composition.
FIG. 3 is a cross-sectional view of the main part illustrating the case where InGaN is used as the “lift-off layer”. In other words, in the configuration shown in the figure, the InGaN layer 21 is provided between the GaN layer 12 and the n-type GaN layer 14. Here, the composition of In (indium) in the InGaN layer 21 can be about 20%. When the InGaN layer 21 is inserted, high-density pits 20C that are considered to be caused by In phase separation are formed during the growth. The pits 20C are fine holes penetrating the InGaN layer 21 and are often formed with a density of about 10 ⁷ to 10 ⁹ / cm ² . By this pit, the InGaN layer 21 becomes a physically weak layer, and the substrate 11 can be easily peeled off.

  Here, in order to easily cause the substrate 11 to peel off, the In composition of the InGaN layer 13 that is the “lift-off layer” is preferably 10% or more, and more preferably 20% or more. However, when the MOCVD method is used, the higher the In composition, the easier it is to grow. The layer thickness is preferably in the range of 0.1 to 1 μm. If the In composition is lower than this, or if the layer thickness is thin, the pits are insufficient and the substrate 11 cannot be easily peeled off. If the InGaN layer is thicker than this, the nitride that grows thereon is formed. This is because the tendency of the crystallinity of the semiconductor layer to deteriorate becomes significant.

  InGaN can also be grown by the hydride VPE method. Therefore, if the growth conditions are optimized, the GaN layer 12 can be directly grown on the sapphire substrate 11 by the hydride VPE method.

On the other hand, what can be used as the “lift-off layer” in the present embodiment is not limited to those having spatial voids such as cracks and pits, as described above, for example, crystal defects such as dislocations and other parts. A layer having a remarkably high density may be used. Specifically, a semiconductor layer having a defect density of 10 ⁸ / cm ² or more and a layer thickness of 10 nm or more can act as a “lift-off layer”. Further, the lift-off layer as described above may be provided directly on the sapphire substrate.

Alternatively, without providing a lift-off layer by crystal growth, a dielectric film such as SiO ₂ is patterned on the GaN layer 12 in a stripe shape to accelerate the lateral growth mode during growth by MOCVD or hydride VPE. There is also a method of terminating the upward dislocation. In this case, the SiO ₂ layer portion can be used as a “lift-off layer” for peeling the substrate. In this case, the gap may be formed by side-etching SiO ₂ with hydrofluoric acid after growth.

FIG. 4 is a schematic cross-sectional view illustrating a semiconductor laser manufactured according to this embodiment. In the figure, reference numeral 15 denotes an n-type GaN contact layer (Si-doped, doping concentration 1 × 10 ¹⁸ cm ⁻³ ) grown by hydride VPE. As described above with reference to FIG. Thus, it is used as a new substrate. In the figure, 24 is an n-type Al _0.08 Ga _0.92 N cladding layer (Si-doped, 1 × 10 ¹⁸ cm ⁻³ , layer thickness O.8 μm), 25 is a GaN optical waveguide layer, and 26 is a multiple quantum well structure (MQW). ) Is an GaN optical waveguide layer (Mg doped, 1 × 10 ¹⁹ cm ⁻³ , O.1 μm).

Here, the MQW well layer of the active layer portion 26 is made of In _0.15 Ga _0.85 N layer having a thickness of 3 nm, and the barrier layer is made of In _0.02 Ga _0.98 N having a thickness of 6 nm. There are five well layers. The active layer portion 26 has a p-type Al _0.20 Ga _0.80 N cap layer having a thickness of 2 nm between the MQW and the p-type optical waveguide layer 27.

Further, in the figure, 28 is a p-type Al _0.08 Ga _0.92 N cladding layer (Mg doped, 5 × 10 ¹⁹ cm ⁻³ , 0.8 μm), and 30 is a p-type GaN contact layer (Mg doped, 8 × 10 ¹⁹ cm ^−3). , 0.5 μm), and the uppermost portion was made to have a high concentration of Mg up to 2 × 10 ²⁰ cm ⁻³ . 29 is a current confinement layer made of n-type InGaN, 31 is a p-side electrode in which Pt / Ti / Pt / Au are laminated in this order, and 32 is an n-side electrode. The laser mirror at the end face provided in the direction parallel to the paper surface is formed by cleavage.

  The laser of FIG. 4 is as described above with respect to FIG. That is, an n-type GaN layer 15 is grown on a sapphire substrate (not shown) by a hydride VPE (H-VPE) method via a lift-off layer. Then, the n-type GaN layer 15 obtained by peeling the sapphire substrate from the lift-off layer is used as a substrate to grow the layers 24 to 30 by the MOCVD method. Alternatively, the sapphire substrate may be peeled off after the layers 15 to 30 are grown via the lift-off layer on the sapphire substrate.

  The ridge structure using the current confinement layer 29 can be formed by using a photolithographic technique using a photosensitive resist and a dry etching technique using reactive chlorine ions. That is, the current confinement layer 29 is grown using the selective regrowth method, and the contact layer 30 is grown thereon.

  According to this embodiment, since the sapphire substrate can be peeled off, cleavage for forming the end face of the laser can be easily and reliably performed. That is, a mirror-like end face can be formed more stably than a conventional nitride semiconductor laser element, and the laser oscillation characteristics can be greatly improved.

  Further, in the conventional element formed on the sapphire substrate, the mesa is formed and the p-side and n-side electrodes are taken from the same surface. However, according to this embodiment, the leakage current is reduced. .

  Further, since there is no sapphire substrate having a different thermal expansion coefficient from that of a nitride semiconductor, distortion due to heat generation during the operation of the laser does not occur, and the lifetime of the device is improved. Further, since there is no light reflection occurring at the sapphire substrate and the GaN interface, the oscillation mode is stable and the threshold value is also lowered.

  For example, according to the present embodiment, when the width of the ridge is 4 μm at the bottom, continuous oscillation was performed at room temperature at a threshold of 65 mA. As a result of measuring the p-side electrode 31 mounted on a heat sink, the oscillation wavelength was 405 nm and the operating voltage was about 4.5V. The beam characteristics were unimodal, and the astigmatic difference was as small as about 10 μm. The maximum optical output was obtained up to 10 mW in continuous oscillation, and the maximum continuous oscillation temperature was 60 ° C. Regarding reliability, it operated stably at room temperature for over 1000 hours. That is, according to this embodiment, a semiconductor light emitting device having extremely high performance and high reliability can be manufactured by easily and reliably peeling the epitaxial growth layer from the sapphire substrate.

  Moreover, since the peeled sapphire substrate is hardly damaged by the peeling of the substrate, it can be reused for the next crystal growth. This makes it possible to produce a high-quality nitride-based semiconductor epitaxial crystal with few defects at a low cost.

The present embodiment can also be applied to the manufacture of a light emitting diode.
FIG. 5 is a schematic cross-sectional view showing a light-emitting diode manufactured by the same manufacturing method as FIG. In the figure, 15 is an n-type GaN contact layer (Si doped, 1 × 10 ¹⁸ cm ⁻³ ) by a hydride VPE method, 34 is an n-type Al _0.08 Ga _0.92 N clad layer (Si doped, 1 × 10 ¹⁸ cm ⁻³⁾ , 0.3 μm) and 35 are multiple quantum well structure (MQW) active layers. Here, the MQW well layer is composed of an In _0.35 Ga _0.65 N layer having a thickness of 3 nm, and the barrier layer is composed of In _0.02 Ga _0.08 N having a thickness of 6 nm. There are three well layers.

36 is a p-type Al _0.08 Ga _0.92 N clad layer (Mg doped, 5 × 10 ¹⁹ cm ⁻³ , 0.1 μm), 37 is a p-type GaN contact layer (Mg doped, 8 × 10 ¹⁹ cm ⁻³ , 0 0.1 μm), and the uppermost portion was made to have a high concentration of Mg up to 2 × 10 ²⁰ cm ⁻³ . Further, 38 is a p-side electrode made of Pt / Ti / Pt / Au, 39 is an n-side electrode, and 40 is a chip carrier.

  According to this specific example, the p-side electrode 38 can act as a light reflecting layer, and the entire surface can be contacted, so that the light extraction efficiency can be improved and the operating voltage can be reduced. In addition, since the p-side and n-side electrodes can be provided on the top and bottom of the chip, the chip size can be reduced as compared with the conventional nitride LED formed on the sapphire substrate.

  In this specific example, a current of 20 mA was obtained at an applied voltage of 2.8 V, and an optical output of 10 mW was obtained in a blue wavelength band of 450 nm.

  Next, a second embodiment of the present invention will be described. In this embodiment, after processing the surface of a substrate such as sapphire in advance, a nitride-based semiconductor layer is epitaxially grown, and the substrate is peeled off easily and reliably.

  FIG. 6 is a conceptual diagram for explaining a second embodiment of the present invention. That is, this figure is a process cross-sectional view of the substrate portion, where 101 represents a sapphire substrate, 102 represents a void, 103 represents a GaN epitaxial layer, and 104 represents polycrystalline GaN.

  In the present embodiment, first, as shown in FIG. 6A, a recess is formed on the surface of the sapphire substrate 101. Specifically, a mask (not shown) is attached to the sapphire substrate 101, and a groove having a width of 2 μm and a depth of 3 μm, for example, is formed using a dry etching method.

  Next, the mask is removed, and as shown in FIG. 6B, the GaN layer 103 is epitaxially grown using a hydride VPE method. Metallic gallium is used as the gallium (Ga) raw material, ammonia is used as the nitrogen (N) raw material, hydrogen chloride (HCl) is used as the gallium transport carrier, and the crystal growth temperature is about 950 ° C. for 8 hours. Thus, the GaN layer 103 of about 100 μm can be epitaxially grown. By this epitaxial growth, the top of the concave portion of the substrate 101 is closed, and the void 102 is formed. At this time, polycrystalline GaN 104 is deposited on the bottom surface of the gap 102 of the substrate 101.

  When the temperature is lowered to room temperature after the epitaxial growth, the substrate 101 is peeled off from the epitaxially grown GaN layer 103 as shown in FIG. This is presumably because cracks occur between the substrate 101 and the GaN layer 103 due to distortion due to the difference in thermal shrinkage rate when the temperature is lowered. According to the present embodiment, by providing the gap 102, the occurrence of such cracks can be promoted, and the substrate 101 can be easily and reliably peeled off.

  In addition to the method of cooling from the epitaxial growth temperature, any method of applying a thermal or mechanical impact can be used to peel off the substrate 101. For example, when the substrate 101 does not peel off after cooling to room temperature after epitaxial growth, cracks are formed between the substrate 101 and the GaN layer 103 by performing rapid heating / cooling by a method such as RTA (Rapid Thermal Annealing). Thus, the substrate 101 can be peeled off. Alternatively, as will be described in detail later, by irradiating a laser beam having a wavelength with a high GaN absorption rate from the back surface side of the substrate 101, GaN near the interface can be evaporated and the substrate can be peeled off. Alternatively, the substrate can be easily and reliably peeled off by applying mechanical stress or impact using various jigs or ultrasonic waves.

The surface of the GaN layer 103 having a thickness of about 100 μm thus obtained was mirror-like, exhibited n-type conductivity, and had a carrier concentration of about 10 ¹⁷ cm ⁻³ . The carrier concentration can be adjusted by doping during epitaxial growth. When the GaN layer 103 having a thickness of about 100 μm thus obtained was etched in molten potassium hydroxide at about 350 ° C., the etch pits were on the order of about 10 ⁶ cm ⁻² . Compared with the conventional method, where the etch pit density of the GaN layer grown on the flat sapphire substrate is about 10 ⁸ cm ⁻² , it can be said that the present embodiment has greatly improved.

  Next, as shown in FIG. 6D, a predetermined element structure 106 is epitaxially grown on the GaN layer 103 having a low defect density thus obtained as a substrate. Furthermore, an electrode or a protective film (not shown) is formed as necessary.

  If the sapphire substrate 101 does not peel off after the GaN layer 103 is grown by the hydride VPE method as shown in FIG. 6B and the wafer is cooled to room temperature, the wafer is introduced into the MOCVD apparatus as it is. Then, the laser element structure 106 may be grown. Thereafter, the sapphire substrate 101 can be easily and reliably peeled off by applying a thermal or mechanical impact by the method described above.

  Also in this embodiment, since the peeled sapphire substrate is hardly damaged by the substrate peeling, it can be reused and used for the next crystal growth. This makes it possible to produce a high-quality nitride-based semiconductor epitaxial crystal with few defects at a low cost.

  Here, in this embodiment, the recess formed on the surface of the sapphire substrate 101 is not limited to the groove as shown in FIG. 6A, and may have various other shapes. In other words, any shape that can be blocked by the GaN layer 103 grown on the GaN layer 103 and that facilitates the peeling of the substrate by generating cracks is possible. It may be a plurality of grooves or a number of independent holes. As the opening shape of such a hole, various shapes such as an ellipse and a polygon can be cited in addition to a circle, and the shape may be indefinite.

  Further, according to the results of trial production by the present inventor, when the width of the recess formed on the surface of the sapphire substrate 101 is A, the depth is B, and the distance between adjacent recesses is C, A ≦ C and A When the relationship of ≦ B was satisfied, a tendency to obtain good results was recognized. That is, under such conditions, the recess can be closed by the GaN layer 103 while facilitating the generation of cracks.

FIG. 7 is a schematic sectional view showing an example of the structure of the semiconductor laser device manufactured according to the present embodiment. That is, in the figure, the GaN layer 103 used as the substrate is shown on the upper side. In the figure, 206 is an n-type cladding layer (GaN layer: undoped, layer thickness 40 nm, AlGaN layer: Si doped, 3-5 × 10 ¹⁸ cm ⁻³ , layer thickness 40 nm, total film thickness 0.8 μm), 207 is GaN An optical confinement layer (undoped, 0.1 μm), 208 is an In _O.2 Ga _O.8 N / GaN-MQW active layer (undoped, well layer 2 nm, barrier layer 4 nm, 3 periods), and 209 is a GaN optical confinement layer ( 210 is a first p-type Al _0.03 Ga _0.97 N cladding layer (Mg doped, 1 × 10 ¹⁸ cm ⁻³ , Si doped, 1 × 10 ¹⁷ cm ⁻³ , 0.1 μm), 211 Is an n-type Al _0.03 Ga _0.97 N current confinement layer (Si doped, 1 × 10 ¹⁸ cm ⁻³ , Si doped, 1 × 10 ¹⁷ cm ⁻³ , 0.1 μm), 212 is a second p-type Al _0.03 Ga _0.97 N clad layer (Mg doped, 1 × 10 ¹⁸ cm ^{−3 3} , Si-doped, 1 × 10 ¹⁷ cm ⁻³ , 0.1 μm) and 213 represent p-type GaN contact layers, respectively.

  As a specific growth procedure, first, the cladding layer 206 to the current confinement layer 211 are grown on the GaN layer 103. Thereafter, the wafer is taken out from the growth chamber, and a portion through which a current flows is selectively etched to expose the clad layer 210. Next, the wafer is again introduced into the growth chamber, and the second cladding layer 212 and the contact layer 213 are grown. A series of growth of the laser element structure 106 can be performed by MOCVD.

  The laser device is completed by forming an electrode (not shown) on the wafer grown in this way, cleaving it into a chip, and mounting it on the heat sink 300. The laser device thus formed has an n-side electrode on the upper side of the chip and a p-side electrode on the lower side.

  The semiconductor light emitting device manufactured according to the present invention has extremely high quality crystallinity and remarkably improved electro-optical characteristics as compared with a light emitting device formed on a conventional sapphire substrate. In addition, as in the first embodiment described above, the p-side and n-side electrodes can be provided above and below the device, respectively, so that the contact area can be increased to reduce the device resistance, and the chip size can be reduced. it can.

  In addition, since current can flow in the vertical direction of the chip, defects in the element are extremely reduced, and the reliability of the laser is greatly improved. That is, as a result of the reliability test, a life expectancy exceeding 100,000 hours was obtained under an operating condition of 50 mW at room temperature.

  FIG. 8 is a schematic cross-sectional view showing a second specific example of the semiconductor laser device manufactured according to the present embodiment. With respect to this figure, the same parts as those in FIG. In the laser device of FIG. 8, a p-side electrode 260 and an n-side electrode 250 are formed on the surface opposite to the heat sink 300.

In order to form this type of device, the steps up to the formation of the device structure 106 may be the same as those described above with reference to FIG. 7, but etching for forming the n-side electrode 250 is required next. That is, first, the p-side electrode 260 is formed by patterning. Next, a mask made of SiO ₂ or the like is formed on the portion where the p-side electrode 260 is formed, and the other portion is selectively etched by a dry etching method to expose the n-type GaN layer 103. After removing the SiO ₂ , the SiO ₂ current leakage prevention film 240 is covered except for the portion where the n-side electrode is formed and the p-side electrode. Finally, the n-side electrode 250 is formed.

  In the case of the laser device shown in FIG. 8, unlike the conventional device, the sapphire substrate does not exist between the heat sink and the active layer, so that the heat is efficiently emitted, and the thermal characteristics, lifetime, and light emission of the laser. Efficiency is greatly improved.

Next, a modification of this embodiment will be described.
FIG. 9 is a schematic cross-sectional process diagram illustrating a modification of the second embodiment of the present invention. In this specific example, first, as shown in FIG. 9A, a GaN layer 107 is grown on the sapphire substrate 101 to a layer thickness of about 1 μm by the hydride VPE method.

  Next, grooves are formed as shown in FIG. Specifically, a mask (not shown) is formed, and the groove 102 is formed by performing, for example, etching with a width of 2 μm and a depth of 3 μm using a dry etching method.

  Next, as shown in FIG. 9C, a GaN layer is grown. Specifically, the wafer is once again introduced into the hydride growth apparatus to grow a GaN layer 103 having a layer thickness of about 100 μm. At this time, the GaN layer 107 grown in advance serves as a crystal nucleus for epitaxial growth, and the groove 102 can be closed stably.

  Then, by cooling to room temperature, as shown in FIG.9 (d), the sapphire substrate 101 can be peeled. Thereafter, the obtained laminate of the GaN layers 103 and 107 can be introduced as a new substrate into the MOCVD apparatus to grow a predetermined element structure.

  If the sapphire substrate 101 does not peel off after the growth of the GaN layer 103, the wafer is introduced into the MOCVD layer as it is to form a predetermined element structure, and then stress is applied by applying a thermal or mechanical load. The sapphire substrate 101 may be peeled off by application.

  Also in this specific example, the various effects described above with reference to FIGS. 6 to 8 can be similarly obtained. Further, in this specific example, by previously growing the GaN layer 107 on the sapphire substrate 101, the growth of the GaN layer 103 thereon becomes easy, and the groove 102 is stably closed and grown on this. The crystallinity of the element structure can be further improved.

Next, a second modification of the present embodiment will be described.
FIG. 10 is a schematic process cross-sectional view showing a second modification of the second embodiment of the present invention. In this specific example, first, as shown in FIG. 10A, the groove 102 is formed on the sapphire substrate 101. Specifically, for example, grooves having a width of 20 μm and a depth of 20 μm are formed on the sapphire substrate at intervals of about 40 μm with a dicing cutter.

Next, as shown in FIG. 10B, a mask layer 108 is deposited on the bottom of the groove. Specifically, a mask (not shown) in a portion other than the groove 102, a mask layer 108 is deposited and Si0 _2. In this case, the thickness of the Si0 ₂ to be a mask layer 108 may be any 20μm or less is the depth of the sapphire grooves can be, for example, 1 [mu] m.

  Next, as shown in FIG. 9C, the GaN layer 103 is grown. Specifically, the wafer is once again introduced into the hydride growth apparatus to grow a GaN layer 103 having a layer thickness of about 100 μm. At this time, by providing the mask layer 108 in advance at the bottom of the groove 102, abnormal growth of GaN can be prevented. That is, the bottom of the groove 102 of the sapphire substrate often remains strained during processing by dicing or the like. Such strain may cause abnormal growth of GaN grown thereon. For this reason, the groove 102 is not well closed by the GaN layer 103, and the crystallinity of the device structure portion grown thereon deteriorates. The situation of doing may occur.

  In this modification, by providing a mask layer 108 such as SiO 2 at the bottom of the groove 102, abnormal growth of GaN can be suppressed, and an epitaxial layer of a nitride semiconductor having good crystal quality can be obtained.

  According to this modification, when the GaN layer 103 having a thickness of about 100 μm was grown, the surface became a mirror-like flat surface, and no conspicuous surface pattern such as holes (pits) was observed even when observed with an optical microscope. It was. Further, when the hydride growth apparatus was taken out from the wafer on which the GaN layer 103 was grown, most of the wafers were peeled off from the sapphire substrate. As a result of ultrasonically cleaning the wafer that was not peeled off in pure water, the sapphire substrate 101 peeled off in about 5 minutes.

  Further, when a laser element similar to that shown in FIGS. 7 and 8 was fabricated on the obtained GaN layer 103, substantially similar characteristics were obtained. On the other hand, when the peeled sapphire substrate was subjected to normal pretreatment and the GaN layer 103 was grown again, a high-quality crystal similar to the previously obtained GaN layer 103 was obtained.

  Thus, also according to this modified example, the sapphire substrate can be easily and reliably peeled off to obtain a GaN layer having extremely good crystallinity. In addition, a sapphire substrate that occupies a large portion of the production cost of a semiconductor device made of a nitride-based semiconductor can be reused, and a significant cost reduction can be realized.

Next, a third embodiment of the present invention will be described.
FIG. 11 is a cross-sectional view of the relevant part showing the third embodiment of the present invention.
FIG. 12 is a schematic cross-sectional view showing an example of a laser apparatus manufactured according to this embodiment.
First, the configuration of the laser device shown in FIG. 12 will be described. In FIG. 12, reference numeral 402 denotes a p-side electrode, 403 denotes a p-type GaN contact layer (Mg-doped, 3 to 5 × 10 ¹⁹ cm ⁻³ , 0.01 μm). ), 404 is a first AlGaN cladding layer (Mg doped, 3-5 × 10 ¹⁸ cm ⁻³ , 0.7 μm), and 405 is an AlGaN current confinement layer (Si doped, 3-5 × 10 ¹⁸ cm ⁻³ , 0). .2 μm), 406 is a second AlGaN cladding layer (Mg-doped, 3-5 × 10 ¹⁸ cm ⁻³ , O.1 μm), 407 is an AlGaN overflow prevention layer, 408 is a GaN guide layer (undoped, 0.1 μm) 409, MQW (In _0.2 Ga _0.8 N / In _0.03 Ga _0.97 N, 3 periods) active layer, 410 a GaN guide layer (Si-doped, 5 × 10 ¹⁸ cm ⁻³ , 0.1 μm), 411 n-type AlGaN clas Layer ^{(Si-doped, 3~5 × 10 18 cm -3,} 0.8μm), 412 is n-type GaN contact layer (Si ^{doped, 3~5 × 10 18 cm -3,} 0.01μm), 413 is Ga-rich An n-type GaN layer (Si-doped, 3 to 5 × 10 ¹⁸ cm ⁻³ , 0.01 μm) and 414 are n-side electrodes. In the figure, reference numeral 500 denotes a heat sink.

  Such a laser element can be manufactured by epitaxial growth on the sapphire substrate 101. That is, as shown in FIG. 11A, the element structure 401 is grown on the sapphire substrate 101 by MOCVD.

  Specifically, first, a GaN layer 412 to an AlGaN current confinement layer 405 are grown on the sapphire substrate 101 in this order. Thereafter, the wafer is taken out from the growth chamber of the MOCVD apparatus, a mask is formed on a part of the current confinement layer 405, etching is performed until the cladding layer 406 is exposed, and a part through which a current flows is provided. Re-growth is performed to grow the clad layer 404 and the contact layer 403.

  Next, as shown in FIG. 11B, laser light is irradiated from the back surface side of the sapphire substrate 101. Then, the GaN layer 412 is decomposed by an electric field, and nitrogen is evaporated by being divided into gallium (Ga) and nitrogen (N), and the sapphire substrate 101 can be peeled as shown in FIG.

As the laser light to be irradiated here, it is desirable to use light having a wavelength with high absorptance in the GaN layer 412 grown on the sapphire substrate 101. Specifically, for example, a nitrogen laser can be used. In order to peel the substrate stably, the irradiation density of the laser light is desirably 20 MW / cm ² or more. However, when the crystal is a polycrystal or a layer containing In (indium) such as InGaN, the substrate can be peeled even at about 1 MW / cm ² .

  When the sapphire substrate 101 is peeled in this manner, GaN is separated into gallium (Ga) and nitrogen on the peeled surface of the GaN layer 412, and nitrogen near the surface is separated to form a Ga-rich GaN layer 413.

  In this way, electrodes 402 and 414 are formed on the upper and lower sides of the element structure 401 from which the sapphire substrate 101 is peeled off, and cleaved to form a chip. When the n-side electrode 414 is formed on the Ga-rich GaN layer 413, the electrode and the GaN layer 413 are easily alloyed, and an advantage that the contact resistance can be made smaller than before can be obtained.

  Thereafter, the p-side electrode 402 is bonded to the heat sink 500. In order to join the p-side electrode and the metal heat sink, it is desirable to treat each surface with a plasma such as hydrogen or argon in a high vacuum. In this case, the surface of the heat sink is preferably coated with copper (Cu), aluminum (Al), or any alloy thereof. If it joins in this way, the metal which became a problem when low melting metal solders, such as In (indium), gallium (Ga), tin (Sn), lead (Pb), etc. which were used conventionally are used. The current leakage due to the creeping up can be eliminated.

  When the laser device thus manufactured was operated, it continuously oscillated at room temperature with a threshold of 70 mA. The oscillation wavelength was 410 nm and the operating voltage was 3.1V. Furthermore, by mounting on a heat sink without going through a sapphire substrate, the heat dissipation characteristics of the laser were improved by a factor of 5 compared to the conventional one. Further, since the resonator surface can be stably formed by cleaving, the end face reflectance is high, and even when a highly reflective coating is applied, the surface is less rough and high reflection can be easily obtained. Due to these effects, various characteristics including a threshold value can be improved.

  Further, in the conventional element formed on the sapphire substrate, the mesa is formed and the p-side and n-side electrodes are taken from the same surface. However, according to this embodiment, the leakage current is reduced. .

  Further, since there is no sapphire substrate having a different thermal expansion coefficient from that of a nitride semiconductor, distortion due to heat generation during the operation of the laser does not occur, and the lifetime of the device is improved. Further, since there is no light reflection occurring at the sapphire substrate and the GaN interface, the oscillation mode is stable and the threshold value is also lowered.

  Also in this embodiment, the manufacturing cost can be greatly reduced by reusing the peeled sapphire substrate.

  Conventionally, due to the ease of handling during the process and the substrate used during crystal growth, the thickness of the entire film was about 100 μm, although it was thinned by polishing or the like. However, in such a thick element, the heat resistance and the heat capacity at the time of releasing heat generated from the active layer of the element are increased. On the other hand, when the thickness exceeds the limit, distortion in the element increases due to heat distribution, causing deterioration of characteristics.

  The inventor examined the relationship between the thickness and characteristics of such an element. The following table shows the relationship between the thickness of the element and the element life (time) obtained by the life test.

Thickness (μm) 10 20 30 50 70
Element A 10 ⁵ 10 ⁵ 6 × 10 ⁴ 9 × 10 ³ 6 × 10 ³
Element B 10 ⁵ 10 ⁵ 10 ⁵ 8 × 10 ⁴ 6 × 10 ⁴
Element C 10 ⁵ 10 ⁵ 4 × 10 ⁴ 6 × 10 ³ 4 × 10 ²
(time)
Here, the element A is a laser element in which the nitride layer in contact with the heat sink is GaN, the element B is AlGaN (Al composition is 5%), and the element C is in contact with the heat sink. This is a laser element in which the nitride layer in contact with the heat sink is InGaN (In composition is 10%). In any of the element configurations, it can be seen that the lifetime is better when the element is thinner. Although there are variations depending on the structure of the element, the lifetime is stable when the thickness of the element is less than about 20 μm. That is, in this embodiment, when the thickness of the element portion is 20 μm or less, a good life can be obtained.

  Here, even when the thickness of the element portion obtained by peeling off the sapphire substrate is 20 μm or less, it is usually possible to manufacture by an existing manufacturing method. However, if the handling is not easy, the p-side electrode may be formed and the appropriate substrate may be attached before the sapphire substrate is peeled off. In this case, it is desirable to use a substrate having a cleavage property as a substrate to be attached, and attach the substrate so that the cleavage direction is parallel to the GaN layer of the element. In this way, cleavage at the time of forming the end face of the laser can be performed smoothly. As such a substrate, Si, SiC, GaAs, InP, GaP, GaN, or the like can be used. This substrate may be peeled off when the main process is completed. In this way, even when the thickness of the element is thin, handling properties can be improved and production efficiency can be improved.

Next, a second specific example of the present embodiment will be described.
FIG. 13 is a schematic cross-sectional view illustrating a second specific example of the present embodiment.
That is, the drawing shows a state in which an element structure is formed on the sapphire substrate 101. With regard to this figure, the same parts as those described above with reference to FIG.

In the specific example shown in FIG. 13, so-called lateral growth is performed during crystal growth to reduce crystal defects. Specifically, a GaN layer 502 is grown on the sapphire substrate 101, taken out from the growth chamber, and a SiO ₂ layer 503 is selectively formed so as to cover a part of the GaN layer 502. Thereafter, the GaN layer 504 is grown again by lateral growth in which the GaN layer 502 is introduced into the MOCVD apparatus again and grown in the in-plane direction using the GaN layer 502 exposed in the gap between the SiO ₂ layers 503 as the nucleus of crystal growth.

Thereafter, each layer from the n-type contact layer 412 to the p-type contact layer 403 is grown. Thereafter, laser light is irradiated from the back side of the sapphire substrate 101 to peel off the substrate 101, and the contact layer 412 is exposed by removing the GaN layer 504, the SiO ₂ layer 503, and the GaN layer 504 by dry etching. Further, an electrode is formed to complete the laser element.

  According to this modification, when a nitride-based semiconductor layer is epitaxially grown on the sapphire substrate 101, so-called lateral growth is employed, so that crystal defects in each layer of the device are greatly reduced, and light emission characteristics and electrical characteristics are obtained. Furthermore, the lifetime of the element can be improved.

Next, a third specific example of the present embodiment will be described.
FIG. 14 is a schematic cross-sectional view illustrating a third specific example of the present embodiment. That is, the drawing shows a state in which an element structure is formed on the sapphire substrate 101. First, a GaN layer 601 is grown on a sapphire substrate 101, is taken out the wafer from the growth apparatus, it covers the surface with a Si0 ₂ film 602 leaving a portion. After this, growth is performed again. GaN buffer layer 603, InGaN layer 604, n-type GaN layer 605, n-type GaN / AlGaN superlattice cladding layer (GaN layer: undoped, 40 nm, AlGaN layer: Si-doped, 3-5 × 10 ¹⁸ cm ⁻³ , 40 nm, total film thickness O.8 μm) 606, GaN optical confinement layer (undoped, O.1 μm) 607, In _0.2 Ga _0.8 N / GaN-MQW active layer (undoped, well layer 2 nm, barrier layer 4 nm, 3 periods) 608 GaN optical confinement layer (undoped, 0.1 μm) 609, first p-type Al _0.03 Ga _0.97 N cladding layer (Mg doped, 1 × 10 ¹⁸ cm ⁻³ , Si doped, 1 × 10 ¹⁷ cm ⁻³ , 0 0.1 μm) 610, n-type Al _0.03 Ga _0.97 N current confinement layer (Si doped, 1 × 10 ¹⁸ cm ⁻³ , Si doped, 1 × 10 ¹⁷ cm ⁻³ , 0.1 μm) 611 Grows in order.

Thereafter, the wafer is taken out from the growth chamber, and a portion through which a current flows is selectively removed by etching to expose the first cladding layer 610, and a second p-type Al _0.03 Ga _0.97 N cladding layer (Mg doped, 1 × 10 ¹⁸ cm ⁻³ , Si-doped, 1 × 10 ¹⁷ cm ⁻³ , 0.1 μm) 612, and an n-type GaN contact layer 613 are grown. FIG. 14 shows this state.

Thereafter, the substrate 101 is peeled off by irradiating a laser beam from the back surface of the sapphire substrate 101. Here, by using a wavelength that is transparent with respect to GaN and has a high absorptance with respect to InGaN as the wavelength of the laser light, the InGaN layer 604 absorbs the laser light and InGaN is decomposed by an electric field, so that the sapphire substrate 101 At the same time, the GaN layer 601, the SiO ₂ film 602 and the GaN buffer layer 603 can be peeled off.

  When the In (indium) composition ratio of the InGaN layer 604 is about 20%, the wavelength of the laser light is preferably around 400 nm.

  After peeling in this way, electrodes are formed on both sides of the element and cleaved to form a chip. By mounting this on the heat sink 500, the semiconductor laser device as shown in FIG. 15 is completed.

  FIG. 16 is a schematic cross-sectional view showing an example in which a p-side electrode and an n-side electrode are formed on the surface opposite to the heat sink 500. Similarly to the laser element described above, each layer can be formed by crystal growth of each layer on a sapphire substrate and peeling the substrate by irradiating laser light from the back surface of the substrate. The configuration of the element in FIG. 16 is substantially the same as that described above with reference to FIG. 8, and therefore, the same reference numerals are given here and detailed description thereof is omitted.

  Also in this embodiment, since the sapphire substrate can be peeled easily and reliably, the same effects as those of the first embodiment and the second embodiment described above can be obtained. Furthermore, in this embodiment, the lifetime can be improved as described above by setting the thickness of the element obtained by peeling the sapphire substrate to 20 μm or less.

  Next, the stack type laser obtained by the present invention will be described.

  FIG. 17 is a conceptual diagram illustrating the configuration of a stacked laser obtained by the present invention. That is, the stack type laser 700 of the present invention has a configuration in which the laser elements 701 are stacked vertically and horizontally. A heat sink 702 is provided between the laser elements 701 and also serves as an electrode. A positive electrode 710 is provided at one end, and a negative electrode 720 is provided at the other end. The laser element 701 can be manufactured according to the first to third embodiments described above, and has a p-side contact and an n-side contact above and below the element, respectively. Current injection is performed through the upper and lower electrodes 710 and 720.

  With such a stack type laser, an extremely high output can be obtained. Although FIG. 17 illustrates a laser in which laser elements 701 are stacked in 5 rows and 5 columns, the number of elements may be any number. According to the present invention, since these laser elements 701 do not have a sapphire substrate, it is possible to obtain a very compact stacked laser with good heat dissipation characteristics. The laser beam spot thus obtained can be almost the same size as a solid laser or gas laser, and a parallel beam with a large aperture can be obtained.

  According to the present invention, a very ideal stack type laser can be realized as a light source for a laser projector by utilizing the fact that the beam spot is particularly small with high output and that high-speed modulation is possible because of the semiconductor laser.

  As a result of experiments by the present inventors, when a current was injected into the laser shown in FIG. 17, a light emission characteristic of 90 W output was obtained at an operating voltage of 15 V and an oscillation threshold of 150 mA and a driving current of 10 A. Since the thickness of the laser element 701 constituting the stacked laser is about 20 μm, the total thickness is about several mm even when the thickness of the heat sink 702 is added when five layers are stacked.

  In the conventional high-power stack type laser, the thickness between the electrodes of the individual laser elements before stacking is 100 μm or more, that is, the distance between the light emitting points of the laser elements is equal to the thickness of such elements. In such a laser, the laser beam emitted from each element is independent, and the influence of light emitted from a certain element on an adjacent element is extremely small.

  On the other hand, according to the present invention, by setting the thickness of each laser element 701 to about 20 μm, the light emitting points are close to each other, and the influence of light from the laser elements adjacent to each other is received. As a result, each laser element 701 is easily excited by light from the active layer of an adjacent element, and the light emission efficiency is increased.

  FIG. 18 is a conceptual diagram showing a modification of the stack type laser according to the present invention. That is, in the stack type laser shown in the figure, a diamond thin film is used as the heat sink 704, and an electrode 703 for current injection is formed by patterning on the diamond thin film 704, whereby each of the laser elements 701 is individually controlled. Is possible.

  Moreover, in order to join the electrode of each element 701 and the electrode on the heat sink 704, each surface is treated and joined with plasma of hydrogen, argon or the like in a high vacuum so that it has been used so far. Current leakage due to metal scooping, which has been a problem when using low melting point metals, can be suppressed.

  In addition, when pressure is applied from above and below the heat sink 704, the crystals are distorted and valence band pand splitting occurs, and the state density is reduced, so that the threshold value can be reduced. At the same time, adhesion is improved and thermal resistance is reduced.

  When the stack type laser of the present invention is used for a laser projector, a high-quality projector with high brightness that can be viewed outdoors during the day even with a large screen of 1000 inches has been realized. In addition, since the gas laser has been used so far, the weight of the projector device which has been 1500 kg can be reduced to 50 kg.

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

For example, in addition to the sapphire substrate used in each specific example, the substrate is not limited to sapphire, and other insulating substrates such as spinel, MgO, ScAlMgO ₄ , LaSrGaO ₄ , (LaSr) (AlTa) O _3, etc. Similarly, conductive substrates such as SiC, Si, Ge, and GaAs can be used to obtain the respective effects. Also, II-VI group compound semiconductors can be used as the substrate. Here, it is desirable to use the (0001) plane in the case of the ScAlMgO ₄ substrate and the (111) plane in the case of the (LaSr) (AlTa) O ₃ substrate.

  In addition, the structure of the light-emitting element shown in each specific example is merely an example, and the configuration can be variously modified by those skilled in the art. For example, the conductivity type of each layer can be reversed, a multiple quantum well structure can be adopted as the active layer, or various current confinement structures can be adopted.

  Furthermore, the present invention is not limited to a semiconductor laser, and can be similarly applied to a light emitting element using a light emitting diode or other nitride-based semiconductor to obtain the same effect.

6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment of the invention; FIG. FIG. 2 is an enlarged cross-sectional view of a main part showing portions of GaN 12, AlGaN layer 13, and GaN layer 14 in FIG. FIG. 6 is a cross-sectional view of a main part illustrating a case where InGaN is used as a “lift-off layer”. 1 is a schematic cross-sectional view illustrating a semiconductor laser manufactured according to a first embodiment. It is a schematic sectional drawing showing the light emitting diode produced with the manufacturing method similar to FIG. It is a conceptual diagram for demonstrating 2nd Embodiment of this invention. It is a schematic sectional drawing showing an example of the structure of the semiconductor laser manufactured by 2nd Embodiment. It is a schematic sectional drawing showing another specific example of the laser element manufactured by 2nd Embodiment. It is an outline process sectional view showing the 1st modification of a 2nd embodiment of the present invention. It is a schematic process sectional drawing showing the 2nd modification of 2nd Embodiment of this invention. It is principal part process sectional drawing showing the 3rd Embodiment of this invention. It is a schematic sectional drawing showing an example of the laser element manufactured by 3rd Embodiment. It is a schematic sectional drawing showing the 2nd specific example of 3rd Embodiment. It is a schematic sectional drawing showing the 3rd specific example of 3rd Embodiment. It is a schematic sectional drawing showing the semiconductor laser apparatus by 3rd Embodiment. It is a schematic sectional drawing showing the example which formed the p side electrode and the n side electrode in the surface on the opposite side to the heat sink 500. FIG. It is a conceptual diagram which illustrates the structure of the stack type laser obtained by this invention. It is a conceptual diagram showing the modification of the stack type laser by this invention.

Explanation of symbols

12 GaN layer 13 AlGaN layer 14 GaN layer 15 GaN layer 16 Multilayer structure 17 Jig 18 P-side electrode 19 n-side electrode 20A Crack 20B Cavity 20C Pit 21 InGaN layer 24 n-type Al _0.08 Ga _0.92 N cladding layer 25 GaN optical waveguide Layer 26 Active layer portion 27 having a multiple quantum well structure 27 GaN optical waveguide layer 28 p-type Al _0.08 Ga _0.92 N cladding layer 29 Current confinement layer 30 made of n-type InGaN p-type GaN contact layer 31 p-side electrode 32 n-side electrode 34 n-type Al _0.08 Ga _0.92 N cladding layer 35 multiple quantum well structure (MQW) active layer 36 p-type Al _0.08 Ga _0.92 N cladding layer 37 p-type GaN contact layer 38 p-side electrode 39 n-side electrode 40 chip carrier 101 sapphire substrate 102 Void 103 GaN epitaxial layer 104 Polycrystalline GaN
106 device structure 107 GaN layer 108 mask layer 206 n-type cladding layer 207 GaN optical confinement layer 208 In _O.2 Ga _O.8 N / GaN-MQW active layer 209 GaN optical confinement layer 210 first p-type Al _0.03 Ga _0.97 N clad layer 211 n-type Al _0.03 Ga _0.97 N current confinement layer 212 Second p-type Al _0.03 Ga _0.97 N clad layer 213 p-type GaN contact layer 240 protective film 250 n-side electrode 260 p-side electrode 300 heat sink 401 element structure 402 p-side electrode 403 p-type GaN contact layer 404 first AlGaN cladding layer 405 AlGaN current confinement layer 406 second AlGaN cladding layer 407 AlGaN overflow prevention layer 408 GaN guide layer 409 MQW active layer 410 GaN guide layer 411 n-type AlGaN Clad layer 412 n-type GaN contact layer 413 Ga-rich n-type GaN layer 414 n-side electrode 500 heat sink 601 GaN layer 602 Si0 ₂ film 603 GaN Patsufa layer 604 InGaN layer 605 n-type GaN layer 606 n-type GaN clad layer 607 GaN light confining layer 608 active layer 609 GaN optical confinement layer 610 First p-type Al _0.03 Ga _0.97 N clad layer 611 n-type Al _0.03 Ga _0.97 N current confinement layer 612 Second p-type Al _0.03 Ga _0.97 N clad layer 613 n-type GaN contact layer 700 Stack type Laser 701 Laser element 702 Heat sink 703 Electrode 704 Heat sink 710 Electrode 720 Electrode

Claims (3)

A method for manufacturing a semiconductor light emitting device, comprising:
Providing a lift-off layer including at least one of crystal defects or voids on the substrate;
Providing a layer made of a nitride-based semiconductor on the lift-off layer;
Separating the substrate and the nitride semiconductor layer;
Equipped with a,
The lift-off layer is formed by an InGaN layer,
The method of manufacturing a semiconductor light emitting element, wherein the InGaN layer includes the voids and has a density of 10 ⁷ / cm ² or more and 10 ⁹ / cm ² or less . The method of manufacturing a semiconductor light emitting device according to claim 1, characterized in that the In composition of the InGaN layer is 10% or more. The method of manufacturing a semiconductor light emitting device according to claim 1 or 2, characterized in that the layer thickness of the InGaN layer is 0.1μm or 1μm or less.

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