JP3929459B2 - Charged particle beam exposure system - Google Patents

Description

  The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus or an ion beam exposure apparatus mainly used for exposure of a semiconductor integrated circuit or the like, and in particular, an electron beam exposure apparatus for directly pattern-drawing a wafer with an electron beam, or The present invention relates to a technique effectively applied to an electron beam exposure apparatus that illuminates a mask with an electron beam and projects and exposes an electron beam from the mask onto a wafer via a reduction electron optical system.

  According to a study by the present inventor, the following can be considered regarding the technology of the charged particle beam exposure apparatus.

  Conventional electron beam exposure apparatuses include a point beam type that uses a beam in the form of a spot, a variable shaped beam type that uses a rectangular section having a variable size, and a collective figure irradiation system.

  Since the point beam type electron beam exposure apparatus performs drawing using a single electron beam, the throughput is low, and it is used only for research and development. The variable shaped beam type and collective figure irradiation type electron beam exposure apparatuses have a throughput that is 1 to 2 orders of magnitude higher than that of the point type, but is basically about 0.1 μm because drawing is performed using a single electron beam. When exposing a pattern in which a fine pattern is packed with a high degree of integration, there are still many problems in terms of throughput.

  As an apparatus for solving this problem, a pattern to be drawn is formed as a pattern transmission hole in a stencil mask, and the stencil mask is illuminated with an electron beam, whereby the pattern to be drawn is transferred to the sample surface via the reduced electron optical system. There is a stencil mask type electron beam exposure apparatus. A plurality of electron beams formed by collimating an electron beam emitted from an electron source by an electron optical system such as a collimator lens and then irradiating the electron beam to an aperture array AA having a plurality of apertures to form a sample Multi-electron beam type exposure that irradiates the surface, further deflects the plurality of electron beams to scan the sample surface, and draws the pattern by individually turning on / off the plurality of electron beams according to the pattern to be drawn There is a device. Both of them have a feature that the throughput can be further improved because the area exposed at one time, that is, the exposure area is wider than the conventional one. Details of functions and configurations of the multi-electron beam exposure apparatus are described in Patent Documents 1 to 3.

  Further, in the above-described electron beam exposure apparatus of the variable shaped beam method and the batch graphic irradiation method, an aperture is used for the purpose of controlling the shape of the electron beam. The irradiated electron beam is heated because it is blocked by the non-opening portion of the aperture, and the heated aperture has a problem that position drift occurs due to thermal expansion.

To solve this problem, variable aperture type and batch figure irradiation type electron beam exposure systems make it easy to replace apertures by integrating multiple aperture stops into the same fixture with conductive adhesive. In addition, Patent Document 4 discloses a technique for reducing the thermal load on the aperture due to the incidence of an electron beam.
JP 2001-267221 A JP 2002-319532 A JP 2002-353113 A JP-A-6-5499

  By the way, as a result of examination of the technique of the charged particle beam exposure apparatus as described above by the present inventors, the following has been clarified.

  For example, in a multi-electron beam type exposure apparatus that irradiates an electron beam substantially parallel to the aperture array to obtain a plurality of electron beams, the electron beam that does not always reach the sample substrate is blocked by the non-opening portion of the aperture array. Thus, the aperture array is heated by the electron beam irradiation. In addition, in an adjustment operation for properly irradiating the sample surface from the electron source with an electron beam, an electron beam having a higher current density than that at the time of writing may be used. Also in this case, since the electron beam is split by the aperture array, similarly, the electron beam blocked by the non-opening portion of the aperture array heats the aperture array.

  On the other hand, the aperture array is often formed using a thin substrate such as silicon for the purpose of ensuring the shape accuracy and arrangement accuracy of the openings, so that cooling by heat conduction is difficult to perform, and the electron beam There is a structural problem such that it is difficult to dissipate heat by heat transfer because it is in a vacuum atmosphere because it is arranged on the orbit. That is, it is often a structure that is easily heated by electron beam irradiation and hardly dissipates heat. Therefore, in the aperture array, the local temperature rise due to the electron beam irradiation deteriorates the shape accuracy and arrangement accuracy of the openings due to thermal expansion, and the drawing accuracy is lowered. There is a problem that the function is not performed.

  Furthermore, in the multi-electron beam type exposure apparatus, the arrangement accuracy of the apertures arranged in the aperture array is sub-micron level to obtain the drawing accuracy, and the mounting posture of the aperture array itself is several microns in the horizontal, vertical and rotational directions. It is necessary to secure the following.

  In order to solve this problem by reducing the incident amount of the electron beam to the aperture array using the technique described in Patent Document 4 described in the background art, a plurality of aperture arrays are fixed by conductive bonding. Since they are integrated, a reduction phenomenon occurs in which the volume of the adhesive itself decreases due to evaporation of the solvent when the adhesive is solidified. In this case, the aperture array itself is distorted, and the aperture placement accuracy cannot be ensured, and the positional variation between the aperture arrays occurs and the mutual position accuracy during aperture array adjustment cannot be ensured. In addition, since a plurality of aperture arrays cannot be replaced independently because they are fixed and integrated with an adhesive, the solvent remaining in the adhesive deteriorates the quality of the vacuum, requiring a higher vacuum level and higher-grade vacuum environment. There is also a problem that it is difficult to apply to a precision electron beam exposure apparatus.

  In addition, the technique disclosed in Patent Document 4 has a problem that it is difficult to obtain reproducibility of drawing conditions by aperture replacement because there is no consideration for ensuring positioning accuracy at the time of aperture replacement. This solves the problem that it is difficult to apply to an electron beam exposure apparatus that requires severe arrangement accuracy of the aperture and the mounting orientation accuracy of the aperture array itself, such as an aperture array used in a multi-electron beam exposure apparatus. Can not.

  Further, as another problem, the aperture array is directly irradiated with an electron beam. Therefore, depending on the state of the environment, such as the degree of vacuum and the quality of the vacuum, hydrocarbons or the like adhere and cause contamination. When the adhered dirt has an electrical insulating property, there is a problem that a charge-up phenomenon occurs due to further electron beam irradiation, which adversely affects the trajectory of the electron beam and deteriorates the drawing performance. In order to cope with this problem, when the above-described conventional technique is used, the expensive aperture array cannot be replaced independently, and the reproducibility of the position and orientation at the time of aperture array replacement cannot be obtained. .

  SUMMARY OF THE INVENTION An object of the present invention is to provide a charged particle beam exposure apparatus capable of reducing the thermal load of an aperture array due to electron beam irradiation and improving the drawing accuracy, particularly in a multi-electron beam exposure apparatus. is there.

  Another object of the present invention is to provide a charged particle beam exposure apparatus capable of easily obtaining reproducibility of drawing accuracy accompanying apparatus maintenance, particularly in a multi-electron beam exposure apparatus.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  One form of the charged particle beam exposure apparatus of the present invention is a charged particle beam exposure apparatus that exposes a substrate using a charged particle beam, and is charged using at least a charged particle source that emits a charged particle beam and at least one aperture. A means for controlling the shape of the particle beam (aperture means), and a means for limiting the irradiation amount of the charged particle beam to the aperture means by providing at least one opening in front of the aperture means. is there.

  That is, for example, in a multi-beam type charged particle beam exposure apparatus, a pre-aperture array as an example of a means for limiting the irradiation amount of a charged particle beam is arranged in front of an aperture array as an example of an aperture means. As a result, the thermal load associated with the irradiation of the charged particle beam (electron beam) in the aperture array can be reduced, the shape accuracy and arrangement accuracy of the apertures of the aperture array can be improved, and the drawing accuracy can be improved.

  Here, the means for limiting the irradiation amount of the charged particle beam has an opening larger than the opening provided in the aperture means, and the opening is placed at a position including the opening provided in the aperture means. It is burned. This makes it possible to limit the irradiation amount of the charged particle beam by the pre-aperture array without blocking the aperture array aperture. In addition, the size of the opening provided in the means for limiting the irradiation amount of the charged particle beam can be, for example, a size of 101% to 300% with respect to the diameter of the opening of the aperture means.

  The means for limiting the irradiation amount of the charged particle beam is made of a material having heat resistance equal to or higher than that of the aperture means. That is, the pre-aperture array is preferably made of such a material because the heat load becomes large.

  The means for limiting the irradiation amount of the charged particle beam has a thickness equal to or greater than that of the aperture means. More specifically, for example, the thickness can be 1 to 25 times. That is, it is possible to reduce the thermal load of the pre-aperture array by increasing the thickness within a range in which the processing accuracy of the opening can be maintained to some extent.

  The means for limiting the irradiation amount of the charged particle beam has a detachable means including a positioning function for the aperture means, and is replaceable. In other words, during the apparatus maintenance, the replacement of the pre-aperture array is mainly performed, and the replacement of the aperture array that affects the reproducibility of the drawing accuracy can be performed less frequently. Further, the alignment after replacement of the pre-aperture array does not require much accuracy as compared with that of the aperture array. Therefore, the pre-aperture array includes a positioning function for the aperture array and can be separated from and detached from the aperture array with high reproducibility so that reproducibility of drawing accuracy can be obtained easily and efficiently with equipment maintenance. Become.

  In another form of the charged particle beam exposure apparatus of the present invention, in a charged particle beam exposure apparatus that exposes a substrate using a charged particle beam, a charged particle source that emits at least a charged particle beam and at least one opening are used. It has a means (aperture means) for controlling the shape of the charged particle beam, and has a multi-stage configuration of at least two stages in front of the aperture means, and has at least one opening so that the charged particle beam to the aperture means is provided. And means for limiting the irradiation amount. That is, by configuring the pre-aperture array to have a plurality of stages, the radiation shielding effect in the pre-aperture array is improved, and it is possible to reduce the thermal load caused by the radiation toward the aperture array.

  Here, the means for limiting the irradiation amount of the charged particle beam having the multistage structure has an opening larger than the opening provided in the aperture means, and further, the irradiation amount of the charged particle beam having the multistage structure. The opening arranged in the means for limiting the opening is arranged so that the opening size changes stepwise or gradually. Further, the means for limiting the irradiation amount of the charged particle beam having the multi-stage configuration is made of a material having heat resistance equal to or higher than that of the aperture means.

  Further, the means for limiting the irradiation amount of the charged particle beam having a multistage structure has a thickness equal to or greater than that of the aperture means, and further means for limiting the irradiation amount of the charged particle beam having a multistage structure. It is arranged so that its thickness changes stepwise, gradually or selectively. Further, the means for limiting the irradiation amount of the charged particle beam having the multi-stage configuration has means that can be separated and detached with good reproducibility with respect to the aperture means, and is replaceable.

  In another form of the charged particle beam exposure apparatus of the present invention, in a charged particle beam exposure apparatus that exposes a substrate using a charged particle beam, a charged particle source that emits at least a charged particle beam and at least one opening are used. A means for controlling the shape of the charged particle beam (aperture means), including a temperature-adjustable means in the front stage of the aperture means, and having at least one opening, the charged particle beam is irradiated onto the aperture means. And means for limiting the amount.

  Here, the temperature adjustable means is a coolable means. That is, in addition to the reduction of the thermal load of the aperture array, it is possible to reduce the thermal load of the pre-aperture array by enabling the cooling of the pre-aperture array.

  The temperature-adjustable means is a heatable means. In other words, by enabling heating of the pre-aperture array, it becomes possible to reduce the charge-up phenomenon of the aperture array and the pre-aperture array, which are caused by contamination caused by electron beam irradiation and cause deterioration in drawing accuracy. .

  The means for limiting the irradiation amount of the charged particle beam having the temperature-adjustable means has an opening larger than the opening provided in the aperture means. Further, the means for limiting the irradiation amount of the charged particle beam having the temperature-adjustable means has a thickness equivalent to or larger than that of the aperture means.

  The means for limiting the irradiation amount of the charged particle beam having the temperature-adjustable means has means that can be separated from and detached from the aperture means with good reproducibility, and is replaceable.

  In another form of the charged particle beam exposure apparatus of the present invention, in a charged particle beam exposure apparatus that exposes a substrate using a charged particle beam, a charged particle source that emits at least a charged particle beam and at least one opening are used. Having means for controlling the shape of the charged particle beam (aperture means), and having means for limiting the amount of charged particle beam irradiated to the aperture means by providing at least one opening in front of the aperture means; and The aperture means and / or the means for limiting the irradiation amount of the charged particle beam to the aperture means are provided with a temperature-adjustable means.

  Here, the temperature adjustable means is a coolable means. The temperature-adjustable means is a heatable means.

  The means for limiting the irradiation amount of the charged particle beam having the temperature-adjustable means has an opening larger than the opening provided in the aperture means. Further, the means for limiting the irradiation amount of the charged particle beam including the temperature-adjustable means has a thickness equal to or greater than that of the aperture means.

  The means for limiting the irradiation amount of the charged particle beam including the temperature-adjustable means has means that can be separated from and detached from the aperture means with good reproducibility, and is replaceable.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  In a multi-beam type charged particle beam exposure apparatus, a pre-aperture array is arranged in front of an aperture array, and the aperture array and the pre-aperture array are configured to be separated and removable with a positioning function. It is possible to reduce the thermal load of the aperture array due to irradiation, improve the drawing accuracy, and obtain the reproducibility of the drawing accuracy. In addition, it is possible to quickly eliminate the cause of deterioration of the drawing accuracy due to the pre-aperture array and the charge-up phenomenon of the aperture array caused by the contamination caused by the electron beam irradiation.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted. In this embodiment, an example of an electron beam exposure apparatus is shown as an example of a charged particle beam exposure apparatus. However, the present invention is not limited to an electron beam and can be similarly applied to an exposure apparatus using an ion beam.

(Embodiment 1)
FIG. 1 is a main part schematic diagram showing an example of the configuration of an electron beam exposure apparatus according to Embodiment 1 of the present invention. In FIG. 1, an electron beam generated by an electron gun (not shown) forms a crossover image (hereinafter, this crossover image is referred to as an electron source 1). The electron beam emitted from the electron source 1 is converted into a substantially parallel electron beam by the collimator lens 2. The substantially parallel electron beam illuminates the preaperture array 3 having a plurality of apertures. The collimator lens 2 is composed of electrostatic electron lenses 2a, 2b and 2c. The intensity distribution of the electron beam that illuminates the pre-aperture array 3 is adjusted by adjusting the electro-optical power (focal length) of at least two of the electrostatic electron lenses 2a, 2b, and 2c. Is possible.

  As will be described later, the pre-aperture array 3 has a plurality of openings corresponding to the aperture array 4, and the openings are larger than the openings provided in the aperture array 4. Accordingly, the plurality of electron beams that have passed through the pre-aperture array 3 are irradiated onto the aperture array 4, and the beam shape is shaped by the openings provided in the aperture array 4.

  The plurality of electron beams that have passed through the aperture array 4 form an intermediate image of the electron source 1 by the electrostatic lens array 5 in which a plurality of electrostatic lenses are formed. A blanker array 6 in which a plurality of blankers are formed is disposed on the intermediate image plane.

  Downstream of the intermediate image plane, there is a reduction projection system 7 composed of two stages of symmetrical magnetic doublet lenses 7 a and 7 b, and projects a plurality of intermediate images onto the wafer 8. At this time, since the electron beam deflected by the blanker array 6 is blocked by the blanking aperture 9, it is not irradiated onto the wafer 8. On the other hand, the electron beam that is not deflected by the blanker array 6 is not blocked by the blanking aperture 9 and is thus irradiated on the wafer 8.

  A main deflector 10 for displacing a plurality of electron beams to desired positions in the X and Y directions simultaneously is disposed in the lower doublet lens 7b. The wafer 8 is mounted on the XY stage 11 so that it can move in the XY direction perpendicular to the optical axis. On the XY stage 11, an electrostatic chuck 12 for fixing the wafer 8 and a Faraday cup 13 for measuring the exposure current amount of the electron beam are arranged.

  An example of a system configuration for controlling the electron beam exposure apparatus of FIG. 1 is shown in FIG. The collimator lens control circuit 21 controls the intensity distribution of the electron beam that illuminates the pre-aperture array 3 by adjusting the electro-optical power (focal length) of at least two of the electron lenses 2a, 2b, and 2c. It is a circuit to do. The blanker array control circuit 22 is a circuit that individually controls a plurality of blankers constituting the blanker array 6. The main deflector control circuit 23 is a circuit that controls the main deflector 10, and the current detection circuit 24 is a circuit that processes a signal from the Faraday cup 13. The stage drive control circuit 25 is a control circuit that drives and controls the XY stage 11 in cooperation with a laser interferometer (not shown) that detects the position of the stage. The main control system 26 has a function of controlling the plurality of control circuits and managing the entire electron beam exposure apparatus.

  Next, the configuration of the pre-aperture array 3 and the aperture array 4 according to the first embodiment will be described.

  3 and 4 are plan views showing examples of the configurations of the pre-aperture array 3 and the aperture array 4, respectively. FIG. 5 is a cross-sectional view showing the positional relationship when the pre-aperture array 3 is installed with respect to the aperture array 4. An electron beam 1a in FIG. 5 is an electron beam in which the electron beam emitted from the electron source 1 described in FIG.

  In the pre-aperture array 3, an opening 3a corresponding to the aperture array 4 and a mark 3b in which the opening 3a and its relative positional relationship are guaranteed are formed. Similarly, the aperture array 4 is formed with an opening 4a and a mark 4b whose relative position is guaranteed with respect to the opening 4a.

  Here, as described above, since the electron beam that has passed through the opening 3a of the pre-aperture array 3 is shaped by the opening 4a of the aperture array 4, the opening 3a is larger than the opening 4a. The positions of the openings 3a and 4a are adjusted so that the pre-aperture array 3 is overlaid on the aperture array 4 as shown in FIG. Is done.

  The size (diameter) of the openings 3a can be set to a desired value in accordance with the arrangement pitch of the openings 4a, but about 101% to 300% of the openings 4a in consideration of alignment adjustments and the like. Desirably, more desirably, about 120% to 180%. As a result, the thermal load on the aperture array 4 due to the electron beam irradiation is reduced, the deterioration of the shape accuracy and arrangement accuracy of the openings due to linear expansion can be reduced, and the problem of thermal melting of the aperture array 4 can be solved. become.

  As an example of this, when the openings 4a of the aperture array 4 are arranged in 32 rows × 32 columns, the diameter of the openings 4a is 50 μm, and the pitch between the centers of the adjacent openings 4a is 102 μm, the openings of the pre-aperture array 3 It is assumed that the diameter of 3a is 80 μm (160% of the diameter of the opening 4a). In this case, the electron beam irradiation amount to the aperture array 4 (= the amount of electron beams blocked by the aperture array 4) can be reduced to about 38% compared to the case without the pre-aperture array 3. The temperature of the aperture array 4 increases almost in proportion to the amount of electron beam irradiation, and the shape accuracy and arrangement accuracy of the apertures deteriorate in proportion to this temperature increase. Therefore, in this case, the shape accuracy and arrangement accuracy of the openings can be improved by about 38%.

  In addition, the pre-aperture array 3 is for reducing the amount of electron beam applied to the aperture array 4 and reducing the thermal load, and therefore it is desirable that the pre-aperture array 3 has a high heat resistance structure.

  One method for improving the heat resistance of the pre-aperture array 3 is to use a heat-resistant material having a high melting point. Further, since it is arranged on the orbit of the electron beam, it is necessary that the magnetism is small or non-magnetic. As the heat-resistant material, metals such as molybdenum and tungsten or alloys thereof, ceramics such as alumina and silicon carbide, etc. can be used, but the required heat resistance may be equal to or higher than the material used for the pre-aperture array 4.

  As another method for improving the heat resistance of the pre-aperture array 3, there is a method for improving the heat resistance by quickly diffusing heat input from the electron beam. An example of this is a method of increasing the thickness of the pre-aperture array 3. If the thickness of the pre-aperture array 3 is increased, the thermal resistance in the lateral direction (in the example of FIG. 1, the direction perpendicular to the electron beam irradiation direction) is reduced, so that heat input from the electron beam is easily diffused. Heat resistance is improved. The preferred thickness of the pre-aperture array 3 is affected by the workability of the material, but ranges from the same size as the aperture array 4 to about 25 times. Specifically, for example, the thickness of the aperture array 4 is 20 μm to 100 μm, whereas the thickness of the pre-aperture array 3 can be 50 μm to 200 μm.

  Further, from the viewpoint that heat input from an electron beam is easily diffused, heat resistance can be improved for the same reason even when it is made of a material having high thermal conductivity. For example, when the pre-aperture array 3 is made of silicon, which is the same material as the aperture array 4, and the thickness thereof is twice the thickness of the aperture array 4, the heat resistance can be improved.

  Next, details of the alignment mechanism and adjustment method of the pre-aperture array 3 and the aperture array 4 described above will be described.

  FIG. 7 is a cross-sectional view showing an example of an alignment mechanism for the pre-aperture array 3 and the aperture array 4. In FIG. 7, the pre-aperture array 3 is held by a pre-aperture array base (hereinafter referred to as PAA base) 50, and the aperture array 4 is held by an aperture array base (hereinafter referred to as AA base) 52. An adjustment block 51 is arranged on the PAA base 50 so that the movement can be adjusted. Similarly, an adjustment block 53 is arranged on the AA base 52.

  The opening 3a of the pre-aperture array 3 and the opening 4a of the aperture array 4 are adjusted by the following procedure.

  First, the PAA base 50 on which the pre-aperture array 3 is mounted is disposed on the AA base 52 on which the aperture array 4 is mounted. In this state, the position is adjusted by moving the PAA base 50 relative to the AA base 52 so that the openings 3a of the pre-aperture array 3 include the openings 4a of the aperture array 4. At this time, whether or not the opening 3a is disposed at a position including the opening 4a is adjusted while observing using an optical microscope or the like.

  Next, with the positions of the openings 3a and 4a adjusted, the PAA base 50 and the AA base 52 are fixed, and the adjustment block 51 is abutted against the reference master 54 provided on the AA base 52. Adjust and fix. Similarly, the AA base 52 is also fixed to a predetermined position of the base 55 connected to a lens barrel (not shown) forming the electron optical system, and then the adjustment block 53 is attached to the reference master 56 provided on the base 55. Adjust and fix so that it touches.

  Although the adjustment block is moved and adjusted with respect to the reference master in the first embodiment, it goes without saying that the same effect can be obtained even if the adjustment block is fixed and the reference master is moved and adjusted.

  Next, the configuration and functions of the adjustment blocks 51 and 53 will be described in more detail using the plan view shown in FIG. Here, the adjustment block 51 will be described as an example.

  The adjustment block 51 includes three adjustment blocks, an adjustment block 51a and adjustment blocks 51b and 51c, which are orthogonal to the adjustment block 51a. A pin whose tip is processed into a hemisphere is attached to each adjustment block. This is to achieve point contact when adjusting the reference block against the reference master to ensure position reproducibility at the time of attachment / detachment. Further, as shown in FIG. 8, the reference master 54 includes reference masters 54a and 54b arranged corresponding to the respective adjustment blocks. In FIG. 8, the reference master 54b is made to correspond to the adjustment blocks 51b and 51c, but there is no problem if the reference master 54b is divided into two parts and arranged corresponding to each adjustment block.

  By combining the adjustment block 51 and the reference master 54 in this way, the pre-aperture array 3 mounted on the PAA base 50 is uniquely defined with respect to the aperture array 4 in the horizontal, vertical, and rotational directions.

  Next, when replacing the pre-aperture array 3 for the reasons described above, the pre-aperture array 3 is separated from the AA base 52 together with the PAA base 50, and the openings 3 a or marks 3 b of the pre-aperture array 3 and the PAA base 50 are separated. The distance from the tip of each adjustment block attached to the tip of the hemispherical pin is measured and recorded. Thereafter, after replacement with a new pre-aperture array 3 ′ (not shown), the PAA base 50 is replaced with the opening 3a ′ (not shown) or mark 3b ′ (not shown) of the new pre-aperture array. The tip of each hemispherical pin at the tip of each attached adjustment block is adjusted to the recording distance. The PAA base 50 is rearranged on the AA base 52 so as to abut against the reference master 54 based on the adjusted adjustment block.

  According to the above method, the new pre-aperture array 3 ′ arranged on the PAA base 50 is uniquely defined with respect to the aperture array 4 in the horizontal, vertical and rotational directions, so that high positioning performance is ensured. Thus, the opening 3a ′ of the pre-aperture array 3 ′ and the opening 4a of the aperture array 4 are positioned. In addition to ensuring high positioning reproducibility, the effect of this method is to measure the distance between the opening 3a or mark 3b of the pre-aperture array 3 and the tip of a pin processed into a hemispherical shape at the tip of each adjustment block. If recorded, it is possible to manufacture a replacement pre-aperture array 3 'in advance, and the downtime of the apparatus during replacement can be minimized. In addition, if the distance between the opening 3a or mark 3b of the pre-aperture array 3 and the tip of the semi-spherical pin at the tip of each adjustment block is standardized, the influence of machine differences can be eliminated, Productivity and maintainability can be improved.

  In the above description, the pre-aperture array 3 has been described as an example. However, it is needless to say that the same effect can be obtained with the aperture array 4 in the same manner.

  By using the pre-aperture array described above and the alignment adjustment mechanism in combination, the thermal load on the aperture array due to the electron beam irradiation and the aperture arrangement accuracy can be secured at the same time. Further, since the amount of electron beam irradiation to the aperture array 4 is reduced by taking the above-described means, the aperture array 4 is prevented from being contaminated by adhesion of hydrocarbon or the like due to the electron beam irradiation. It can be. Thereby, the opening shape and the arrangement accuracy of the openings are high, and the replacement life of the expensive aperture array 4 can be extended.

  On the other hand, the pre-aperture array 3 disposed on the upper stage side of the aperture array 4 can be separated and detached, so that it can be quickly replaced when dirt due to adhesion of hydrocarbon or the like occurs. Since the state of the array 4 is maintained, the drawing accuracy is not affected. Therefore, the influence of the charge-up phenomenon caused by the electron beam irradiation can be quickly removed in a minimum time. Further, the pre-aperture array 3 does not need to have a higher aperture shape and aperture arrangement accuracy than the aperture array 4 because of its function, and thus can be manufactured at a low cost, and a cost advantage can be obtained.

  Further, since the aperture array 4 also has the same alignment adjustment mechanism as the pre-aperture array 3, when the aperture array 4 is replaced, it can be replaced quickly and the drawing conditions can be reproduced with high accuracy. .

  By the way, the alignment mechanism of the pre-aperture array 3 and the aperture array 4 may have the form shown in FIG. In FIG. 9, the pre-aperture array 3 is held by the PAA base 90, and the aperture array 4 is held by the AA base 91. The AA base 91 is provided with positioning pins 92a and 92b for determining the position of the PAA base 90 with respect to the AA base 91. The PAA base is provided with positioning pin openings 93a and 93b for receiving the positioning pins 92a and 92b. Yes. The inner diameters of the positioning pin openings 93a and 93b are regulated by a predetermined tolerance, for example, a tolerance of + 0.1% of the outer diameter of the positioning pins 92a and 92b.

  The opening 3a of the pre-aperture array 3 and the opening 4a of the aperture array 4 are adjusted by the following procedure.

  First, the PAA base 90 on which the non-fixed pre-aperture array 3 is mounted is arranged at a position defined by the positioning pins 92a and 92b on the AA base 91 on which the aperture array 4 is mounted. In this state, the pre-aperture array 3 is moved with respect to the aperture array 4 so that the opening 3a of the pre-aperture array 3 includes the opening 4a of the aperture array 4 to adjust the position. At this time, whether or not the opening 3a is disposed at a position including the opening 4a is adjusted while observing using an optical microscope or the like. Next, the PAA base 90 and the pre-aperture array 3 are fixed with the positions of the openings 3a and 4a adjusted.

  By using the positioning pins 92 a and 92 b in this way, the pre-aperture array 3 mounted on the PAA base 90 is uniquely defined with respect to the aperture array 4 in the horizontal, vertical and rotational directions.

  Next, when exchanging the pre-aperture array 3 for the reasons described above, the pre-aperture array 3 is separated from the AA base 91 together with the PAA base 90, and the openings 3a or marks 3b of the pre-aperture array 3 and the PAA base 90 are separated. The distance from the positioning pin opening 93a or 93b is measured and recorded. Thereafter, after replacement with a new pre-aperture array 3 ′ (not shown), the opening 3 a ′ (not shown) of the new pre-aperture array based on the positioning pin opening 93 a or 93 b arranged on the PAA base 90. Alternatively, the mark 3b ′ (not shown) is adjusted to the recording distance. The position-adjusted PAA base 90 is rearranged on the AA base 91 determined by the positioning pins 92a and 92b.

  Furthermore, the alignment mechanism of the pre-aperture array 3 and the aperture array 4 may have the form shown in FIG. In FIG. 10, the pre-aperture array 3 is held by the PAA base 100, and the aperture array 4 is held by the AA base 101. The AA base 101 is provided with a right-angle block 102 that determines the position of the PAA base relative to the AA base, and the PAA base is provided with a right-angle block plane 103 that receives the right-angle block 102.

  The opening 3a of the pre-aperture array 3 and the opening 4a of the aperture array 4 are adjusted by the following procedure.

  First, the PAA base 100 on which the pre-aperture array 3 that is not fixed is mounted is arranged at a position defined by the right-angle block 102 on the AA base 101 on which the aperture array 4 is mounted. In this state, the pre-aperture array 3 is moved with respect to the aperture array 4 so that the opening 3a of the pre-aperture array 3 includes the opening 4a of the aperture array 4 to adjust the position. At this time, whether or not the opening 3a is disposed at a position including the opening 4a is adjusted while observing using an optical microscope or the like. Next, the PAA base 100 and the pre-aperture array 3 are fixed with the positions of the openings 3a and 4a adjusted.

  By using the right angle block 102 in this way, the pre-aperture array 3 mounted on the PAA base 100 is uniquely defined with respect to the aperture array 4 in the horizontal, vertical, and rotational directions.

  Next, when exchanging the pre-aperture array 3 for the reasons described above, the pre-aperture array 3 is separated from the AA base 101 together with the PAA base 100, and the opening 3 a or mark 3 b of the pre-aperture array 3 and the PAA base 100 are separated. Measure and record the distance to the placed right-angle block plane 103. Thereafter, after replacement with a new preaperture array 3 ′ (not shown), the opening 3 a ′ (not shown) or mark of the new preaperture array based on the right-angle block plane 103 attached to the PAA base 100. 3b ′ (not shown) is adjusted to the recording distance. This aligned PAA base 100 is repositioned on the AA base 101 determined by the right angle block 102.

(Embodiment 2)
FIG. 11 is a main part schematic diagram showing an example of the configuration of an electron beam exposure apparatus according to Embodiment 2 of the present invention. In FIG. 11, the electron beam emitted from the electron source 1 becomes a substantially parallel electron beam by the collimator lens 2, and illuminates the preaperture array 31 having a plurality of openings configured in multiple stages. The pre-aperture array 31 has a configuration of at least two stages. In the second embodiment, the pre-aperture array 31 includes pre-aperture arrays 32 and 33.

  FIG. 12 is a cross-sectional view showing the positional relationship when the pre-aperture array 31 is installed with respect to the aperture array 4. The pre-aperture arrays 32 and 33 are provided with a plurality of openings 32a and 33a corresponding to the aperture array 4, and each of the pre-aperture arrays 32 and 33 serves as an alignment reference in which a relative position with the openings 32a and 33a is guaranteed as necessary. A mark (not shown) is arranged. The sizes of the openings 32a and 33a are equal or larger than the opening 32a disposed above, and are formed so as to decrease stepwise or gradually as the aperture array 4 is approached. Yes. The alignment of the openings 32a and 33a of the pre-aperture arrays 32 and 33 and the opening 4a of the aperture array 4 is performed by repeating the alignment adjustment mechanism and the adjustment method described in the first embodiment.

  Further, as in the first embodiment, the preaperture arrays 32 and 33 can be separated and detached, and can be exchanged as necessary. Ideally, the apertures are all arranged concentrically, but the apertures formed by superimposing the pre-aperture arrays 32 and 33 are the apertures of the aperture array 4 even when misalignment occurs. What is necessary is just to include 4a.

  The following effects can be obtained by using the multi-stage pre-aperture array 31 configured as described above.

  First, since the pre-aperture array 31 is configured in multiple stages, the electron beam applied to the aperture array 4 can be blocked in stages, so that each stage of the pre-aperture array 31 (second embodiment). In this configuration example, the electron beams applied to the pre-aperture arrays 32 and 33) are reduced stepwise, and the thermal load on the lower pre-aperture array is reduced. For this reason, the heat-resistant structure of each stage of the pre-aperture array 31 can be changed to further improve the effect as the pre-aperture array.

  Specifically, each stage of the pre-aperture array 31 is made of a material having a different melting point, made of a material having a different thermal conductivity, a structure having a different thickness, etc., and these can be used alone or in combination. Get the effect.

  For example, the preaperture array 32 disposed on the upper side is made of molybdenum or the like having a high melting point to ensure high heat resistance, and the preaperture array 33 disposed on the lower side is more heat resistant than molybdenum. Although it is low, it has a high thermal conductivity, and it is made of silicon, which is a material that can increase the shape accuracy of the openings and the arrangement accuracy of the openings, and adopts a structure that quickly diffuses heat input due to electron beam irradiation to reduce temperature rise. Or, the thickness of the pre-aperture array disposed on the lower side is reduced, and the aspect ratio at the time of opening processing is reduced, thereby improving the shape accuracy of the openings and the arrangement accuracy of the openings.

  Secondly, by configuring the pre-aperture array 31 in multiple stages, the radiation shielding effect can be improved. For example, when the pre-aperture array has two stages and the pre-aperture array has two stages, if the respective injection rates are the same, the amount of heat transfer due to radiation is reduced by half, and the pre-aperture array is further reduced. If there are n stages, the heat transfer amount by radiation is 1 / n, and the heat load of the aperture array 4 can be reduced as the number of stages increases.

  Third, since the pre-aperture array 31 is configured in multiple stages, the aperture array 4 can be used as an electron beam by the pre-aperture array in the second and subsequent stages even when a problem such as heat melting occurs in the upper pre-aperture array. Since the heat input due to irradiation is reduced, it is thermally protected and the service life can be extended.

  Fourth, by increasing the opening of the pre-aperture array 31 toward the upper side, it is possible to reduce the alignment adjustment work and the processing accuracy.

  Furthermore, the same effects as those of the first embodiment can be obtained by the configuration of the second embodiment. That is, since the amount of electron beam irradiation to the aperture array 4 is reduced, it is possible to minimize contamination of the aperture array 4 due to adhesion of hydrocarbons or the like by irradiation of the electron beam. The lifetime can be extended. In addition, when the pre-aperture array 31 is contaminated by adhesion of hydrocarbons or the like and needs to be replaced, it is possible to remove the influence of the charge-up phenomenon without affecting the drawing accuracy. I can expect.

(Embodiment 3)
FIG. 13 is a main part schematic diagram showing an example of the configuration of an electron beam exposure apparatus according to Embodiment 3 of the present invention. In FIG. 13, the electron beam emitted from the electron source 1 becomes a substantially parallel electron beam by the collimator lens 2, and illuminates the pre-aperture array 34 having a temperature adjustment mechanism and a plurality of openings. The pre-aperture array 34 provided with a temperature adjustment mechanism includes a pre-aperture array 35 having a plurality of openings and a temperature adjustment mechanism 60 capable of heating or cooling the pre-aperture array 35.

  In the third embodiment, the case where the pre-aperture array 35 is cooled will be described as an example. However, when heating, the medium of the cooling mechanism is set to a desired temperature (usually higher than room temperature), or the cooling mechanism is It can be implemented by using a heater.

  FIG. 14 is a bird's eye view showing the positional relationship between the pre-aperture array 35 and the PAA base 141, the aperture array 4 and the AA base 142, and the temperature adjustment mechanism 60. The temperature adjustment mechanism 60 is provided with the alignment mechanism and the adjustment method described in the first embodiment. When the PAA base 141 is replaced, it can be replaced quickly and the drawing conditions can be reproduced with high accuracy. it can. The AA base 142 is provided with a temperature adjustment mechanism 60 via a high thermal resistance member 143 such as ceramics, so that the pre-aperture array 35 and the aperture array 4 are thermally separated.

  In this Embodiment 3, since the case of cooling is taken as an example, the temperature adjustment mechanism 60 will be described as a cooling mechanism. The temperature control mechanism 60 is made of a material such as copper or aluminum and its alloy, which is non-magnetic and preferably has high thermal conductivity, or a composite material in which aluminum is impregnated with silicon, etc. A circulation path 144 for circulation is provided. Then, the PAA base 141 and the pre-aperture array 35 can be cooled by circulating a refrigerant whose temperature, flow rate, and pressure are adjusted in a circulation path 144 from a temperature adjustment device provided outside (not shown). . As a specific example, for example, the temperature control mechanism 60 is made of pure copper having the highest thermal conductivity among practical metals, and the circulation path 144 for circulating the refrigerant is constituted by a copper pipe, and the refrigerant is adjusted to 20 ± 0.05 ° C. Use fresh water.

  In addition, it is desirable to provide a heat transfer spencer or the like at the contact portion between the temperature control mechanism 60 and the PAA base 141 in order to reduce the contact heat resistance. However, the surface accuracy is increased and both are pressed, or the heat transfer sheet is sandwiched. The effect can also be obtained by increasing the substantial contact area.

  The circulation path 144 for circulating the refrigerant is configured separately from the PAA base 141 as in the third embodiment in order to prevent water leakage and improve maintainability. However, the circulation path 144 is directly used as a jacket structure. The PAA base 141 may be cooled. The same effect can be obtained by using, as the refrigerant, fluorinate having electrical insulating properties other than water, temperature-controlled cold air, or inert gas such as nitrogen gas.

  Since the preaperture array 35 is cooled by the above-described means, the heat input due to the irradiation of the electron beam is discharged to the outside, and the thermal load on the preaperture array 35 is reduced. For this reason, it is not always necessary to use a heat-resistant material having a high melting point for the pre-aperture array 35, and the material is selected from conditions such as required shape accuracy of openings and arrangement accuracy of openings, workability, and cost. You can select and use.

  Further, as shown in FIG. 15, the temperature adjustment mechanism 60 can be provided not only between the pre-aperture array 35 and the aperture array 4 but also between the aperture array 4 and the base 145, in this case. In addition to reducing the thermal load of the aperture array 4 and avoiding problems such as thermal melting, the temperature rise due to the irradiation of the electron beam can be suppressed, so the shape accuracy of the aperture array 4 due to linear expansion and the arrangement of the apertures An effect of minimizing deterioration in accuracy can be obtained.

  Further, in the configuration of the third embodiment, since the electron beam irradiation amount to the aperture array 4 is reduced by the pre-aperture array 35, the influence of dirt due to adhesion of hydrocarbon or the like can be minimized. The described effects can be obtained.

  As a matter of course, the means of the third embodiment can be provided at each stage or a part of the stages of the pre-aperture array 31 configured in multiple stages as described in the second embodiment. Needless to explain.

  Furthermore, as shown in FIG. 16, the temperature adjustment mechanism 60 may use a heat pipe 161. The heat pipe 161 contains a low boiling point liquid such as ethanol. A liquid having a low boiling point such as ethanol is vaporized by the heat of the pre-aperture array 35, and the PAA base 141 and the pre-aperture array 35 are cooled using the heat of vaporization at that time. Needless to say, the temperature adjustment mechanism 60 using the heat pipe 161 may cool the aperture array 4.

  Furthermore, as shown in FIG. 17, the temperature adjustment mechanism may use a Peltier element 171. The cooling side of the Peltier element 171 is the preaperture array 35 side, and the heat dissipation side of the Peltier element 171 is the side opposite to the preaperture array 35. On the heat dissipation side of the Peltier element 171, another temperature control mechanism 172 is provided, and the heat dissipation by the Peltier element 171 is cooled by the same method as the method illustrated in FIGS.

  Needless to say, the temperature control mechanism using the Peltier element 171 may cool the aperture array 4 again.

  Furthermore, as shown in FIG. 18, the pre-aperture array 35 and the aperture array 4 may be cooled using heat radiation without bringing the temperature adjustment mechanism 60 into contact with the PAA base 141 and the AA base 142. The temperature adjustment mechanism 60 is the same method as the method shown in FIG. 14 and FIG.

  In the third embodiment, the case of cooling has been described as an example. However, in the case of heating, in addition to the above effects, the aperture of the heated pre-aperture array 141 (when this means is installed in the aperture array 142) is described. As the temperature (of the array 142) rises, the condensation phenomenon is alleviated, so that the effect of making it difficult for hydrocarbons and the like caused by electron beam irradiation to occur is obtained, and the charge-up phenomenon due to the electron beam is alleviated. In addition, effects such as extending the replacement life of the pre-aperture array 141 can be obtained.

(Embodiment 4)
FIG. 19 is a main part schematic diagram showing an example of the configuration of an electron beam exposure apparatus according to Embodiment 4 of the present invention. In FIG. 19, an electron beam emitted from the electron source 1 is converted into a substantially parallel electron beam by the collimator lens 2, and a pre-aperture array having a temperature control device 70, a temperature measuring element 70 for measuring temperature, and a plurality of openings. Illuminate 36. The pre-aperture array 36 includes a pre-aperture array 37 having a plurality of openings and a temperature control mechanism 64 that can heat or cool the pre-aperture array 37.

  The electron beam that has passed through the pre-aperture array 36 further passes through the aperture array 41, and a temperature measuring element 71 for measuring the temperature is also attached to the aperture array 41. The temperature measuring elements 70 and 71 arranged in the pre-aperture array 36 and the aperture array 41 are connected to a temperature controller 72 provided outside the apparatus, and the temperature controller 72 controls the temperature of the temperature control mechanism 64. It is also connected to a temperature adjusting device (not shown) provided outside the device for managing the temperature of the medium to be operated. The temperature adjustment device is configured to be able to control the temperature of the medium that controls the temperature of the temperature adjustment mechanism 64 based on the temperature information acquired by the temperature controller 72. Examples of the medium include water. As a matter of course, the temperature measuring elements 70 and 71 are attached to portions that do not affect the electron beam passing through the pre-aperture array 36 and the aperture array 41, and the attachment positions thereof do not matter on the front surface or the back surface.

  Further, the temperature measuring elements 70 and 71 are preferably non-magnetic or extremely small in magnetism, and the temperature measuring elements 70 and 71 may be attached and fixed with an adhesive having a small volatile component, etc. You may form directly on the aperture array 36 and the aperture array 41. FIG. As a specific example, for example, the aperture array 41 is made of silicon, and a platinum resistance temperature detector is directly formed on the surface by a semiconductor process and used.

  Also in the fourth embodiment, the openings 3a and 4a (not shown) provided in each of the pre-aperture array 36 and the aperture array 41 are formed by the alignment mechanism and the adjustment method described in the first embodiment. Alignment and adjustment are performed.

  A temperature control method for the aperture array 41 and the pre-aperture array 36 having the above-described configuration will be described below.

  When the substantially parallel electron beam illuminates the pre-aperture array 36 and the electron beam divided by the pre-aperture array 36 illuminates the aperture array 41, the temperature of the pre-aperture array 36 and the aperture array 41 rises. The increased temperature is transmitted as an electric signal to the temperature controller 72 by the temperature measuring elements 70 and 71, and the temperatures of the pre-aperture array 36 and the aperture array 41 are monitored.

  The allowable temperature of the aperture array 41 is determined in advance by the shape accuracy and arrangement accuracy of the aperture required from the material constituting the aperture array 41 and the drawing accuracy, and is compared with the temperature monitored by the temperature controller 72. . In order to prevent the monitored temperature from exceeding the allowable temperature of the aperture array 41, the temperature controller 72 controls the temperature, flow rate, flow rate, etc. of the medium supplied to the temperature adjustment mechanism 64 in a variable manner. By controlling the above, the temperature of the pre-aperture array 37 is controlled. The temperature of the aperture array 41 monitored by the temperature measuring element 71 and the allowable temperature of the aperture array 41 are always compared, and the temperature of the aperture array 41 does not exceed a certain value or allowable value by feedback control such as PID control or feedforward control. To be controlled.

  With the configuration and control described above, the temperature of the aperture array 41 is controlled to a desired value. In addition to the effects described in the third embodiment, the shape accuracy and arrangement accuracy of the apertures can be maintained with higher accuracy. It becomes possible.

  Similarly, by controlling the temperature of the pre-aperture array 36 using the temperature measuring elements 70 arranged in the pre-aperture array 36, it is also possible to suppress the temperature rise of the aperture array 41 within an allowable value. . In any of these cases, since the temperature of the material constituting the pre-aperture array 36 is controlled, it is not necessary to use a high melting point material or the like, and the material that can increase the shape accuracy and arrangement accuracy of the openings. And inexpensive materials can be used.

  Furthermore, the temperature control mechanism 64 installed in the pre-aperture array 36 may be provided in the aperture array 41 to perform similar temperature control. In this case, since the temperature of the aperture array 41 can be directly controlled and managed, the pre-aperture array 36 may be unnecessary depending on the conditions of the irradiated electron beam.

  In the fourth embodiment, the example in which water is used as the medium for controlling the temperature of the temperature adjustment mechanism 64 has been described. However, the other method described in the third embodiment, the other medium, and the heater are used. Of course it is also possible.

(Embodiment 5)
FIG. 20 is a main part schematic diagram showing an example of the configuration of an electron beam exposure apparatus according to Embodiment 5 of the present invention. The electron beam exposure apparatus shown in FIG. 20 is not a configuration using a multi-electron beam as described in Embodiment 1 or the like, but a configuration example using a single electron beam.

  The electron beam emitted from the electron source 201 passes through the pre-aperture 210, and the numerical aperture (NA) is determined by illuminating the aperture 211, and an image 203 of the electron source 201 is formed by the electromagnetic lens 202. The electron source image 203 is reduced and projected onto the wafer 209 via a reduction electron optical system including electromagnetic lenses 205 and 208. The blanker 204 is an electrostatic deflector located at the position of the electron source image 203 and controls irradiation and shielding of the electron beam to the wafer 209. The blanking aperture 206 is used to shield the electron beam from the wafer 209. The electron beam is scanned on the wafer 209 by the electrostatic deflector 207.

  As described in the first embodiment, the pre-aperture 210 has an opening corresponding to the aperture 211, and the opening is larger than the opening provided in the aperture 211. Therefore, the electron beam that has passed through the pre-aperture 210 is irradiated onto the aperture 211, and its beam shape is shaped by the opening provided in the aperture 211.

  The configuration of the pre-aperture 210 and the aperture 211 of the fifth embodiment has the same alignment adjustment mechanism as that described in the first embodiment, and even when the pre-aperture 210 or the aperture 211 is replaced, the configuration is quick. Exchange is possible, and the drawing conditions can be reproduced with high accuracy. Further, the pre-aperture 210 and the aperture 211 of the fifth embodiment have the same temperature control mechanism as that described in the first to fourth embodiments, and heat input due to electron beam irradiation is discharged to the outside. Thus, the thermal load on the pre-aperture 210 and the aperture 211 can be reduced.

(Embodiment 6)
In the sixth embodiment, a device production method using the electron beam exposure apparatus described in the first to fifth embodiments will be described.

  FIG. 21 shows an example of a manufacturing flow of a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (exposure control data creation), exposure control data of the electron beam exposure apparatus as described above is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon.

  Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the electron beam exposure apparatus to which the exposure control data has been input. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), the semiconductor chip manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 22 shows an example of a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. In step 14 (ion implantation), ions are implanted into the wafer.

  In step 15 (resist process), a photosensitive agent is applied on the wafer. The thickness of the resist applied at this time can be set to the following value, for example. That is, for example, the reduction ratio of the electron optical system of the apparatus in FIG. 1 is 1/50, the apertures 4a of the aperture array 4 are 32 rows × 32 columns (1024), and the center-to-center pitch between the adjacent apertures 4a Is assumed to be 102 μm.

  In this case, the pattern size drawn on the wafer by one beam (one of 1024) is 102 μm × 1/50 = 2.04 μm. Further, raster scanning by an electron beam is performed within the 2.04 μm pattern, and the minimum line width can be set to 16 nm, for example. The minimum line width is realized by the configuration of the apparatus shown in FIG. 1 and the like that forms an intermediate image of the electron source 1 on the blanker array 6 by the electrostatic lens array 5. For example, assuming that the aspect ratio is 3 as the depth of the pattern groove formed on the wafer, the depth of the pattern groove is 16 nm × 3 = 48 nm with respect to the minimum line width of 16 nm. Therefore, the thickness of the resist to be applied can be about 40 nm, which is smaller than the depth of the groove of this pattern.

  Next, in step 16 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

  By implementing such a manufacturing flow using the electron beam exposure apparatus described in the first to fifth embodiments, a highly integrated semiconductor device that has been difficult to manufacture can be manufactured at low cost.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

In the electron beam exposure apparatus by Embodiment 1 of this invention, it is a principal part schematic diagram which shows an example of the structure. It is a figure explaining an example of the system configuration | structure of FIG. It is a top view which shows an example of a structure of the pre-aperture array of FIG. It is a top view which shows an example of a structure of the aperture array of FIG. It is sectional drawing which shows the arrangement | positioning relationship between the pre-aperture array in FIG. 1, and an aperture array. It is a top view which shows the arrangement | positioning relationship of the pre-aperture array in FIG. 1, and an aperture array. It is sectional drawing which shows an example of the alignment mechanism of the pre-aperture array and aperture array in FIG. It is a top view which shows an example of the alignment mechanism of the pre-aperture array and aperture array in FIG. FIG. 2 is a bird's-eye view showing an example of a positioning mechanism using the pre-aperture array and the positioning pins of the aperture array in FIG. 1. FIG. 2 is a bird's-eye view showing an example of an alignment mechanism using a pre-aperture array and a right-angle block of the aperture array in FIG. 1. In the electron beam exposure apparatus by Embodiment 2 of this invention, it is a principal part schematic diagram which shows an example of the structure. It is sectional drawing which shows the arrangement | positioning relationship of the pre-aperture array of FIG. 11, and an aperture array. In the electron beam exposure apparatus by Embodiment 3 of this invention, it is the principal part schematic which shows an example of the structure. It is a bird's-eye view which shows an example of the arrangement | positioning relationship of the pre-aperture array in FIG. 13, an aperture array, and a temperature control mechanism. It is a bird's-eye view which shows an example of arrangement | positioning relationship of the pre-aperture array in FIG. 13, an aperture array, and two temperature control mechanisms. It is a bird's-eye view which shows an example of arrangement | positioning relationship of the temperature control mechanism using the pre-aperture array in FIG. 13, an aperture array, and a heat pipe. It is a bird's-eye view which shows an example of the arrangement | positioning relationship of the temperature control mechanism using the pre-aperture array in FIG. 13, an aperture array, and a Peltier device. It is a bird's-eye view which shows an example of the arrangement | positioning relationship of the temperature control mechanism using the pre-aperture array in FIG. 13, an aperture array, and heat radiation. In the electron beam exposure apparatus by Embodiment 4 of this invention, it is a principal part schematic diagram which shows an example of the structure. In the electron beam exposure apparatus by Embodiment 5 of this invention, it is the principal part schematic which shows an example of the structure. It is a flowchart which shows an example of the manufacturing process of the device using this invention. It is a flowchart which shows an example of the wafer process using this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electron source 1a Electron beam made substantially parallel 2 Collimator lens 2a, 2b, 2c Electrostatic electron lens 3, 31, 32, 33, 34, 35, 36, 37 Pre-aperture array 3a, 32a, 33a, 35a Aperture 3b mark 4,41 aperture array 4a opening 4b mark 5 electrostatic lens array 6 blanker array
7 Reduction projection system 7a, 7b Symmetric magnetic doublet lens 8 Wafer 9 Blanking aperture 10 Main deflector 11 XY stage 12 Electrostatic chuck 13 Faraday cup 21 Collimator lens control circuit 22 Blanker array control circuit 23 Main deflection control circuit 24 Current detection Circuit 25 Stage drive control circuit 26 Main control system 50, 90, 100, 141 Pre-aperture array base 51, 51a, 51b, 51c, 53, 53a, 53b, 53c Adjustment block 52, 91, 101, 142 Aperture array base 54, 54a, 54b, 56, 56a, 56b Reference master 55 Base 60, 64 Temperature adjustment mechanism 61 Cooling mechanism 62 Circulation path 70, 71 Temperature measuring element 72 Temperature controller 92a, 92b Positioning pin 93a, 93b Positioning pin opening 1 02 Right-angle block 103 Plane for right-angle block 143 High heat resistance member 144 Circulation path 145 Base 161 Heat pipe 171 Peltier element 172 Temperature control mechanism for Peltier element 201 Electron source 202 Electromagnetic lens 203 Image of electron source 204 Blanker 205 Electromagnetic lens 206 Blanking aperture 207 Electrostatic lens 208 Electromagnetic lens 209 Wafer 210 Pre-aperture 211 Aperture

Claims (1)

A charged particle beam exposure apparatus that exposes a substrate using a charged particle beam,
A charged particle source emitting a charged particle beam;
Aperture means for controlling the shape of the charged particle beam using at least one aperture;
A pre-aperture array means that is disposed in front of the aperture means and limits the amount of irradiation of the charged particle beam to the aperture means;
The aperture means comprises an aperture array base and an aperture array held on the aperture array base,
The pre-aperture array means includes:
A pre-aperture array base mounted on the aperture array base and detachable from the aperture means;
A pre-aperture array held on the pre-aperture array base;
A first adjustment block provided at an end of the pre-aperture array base and having a pin for adjusting the position of the pre-aperture array means;
A second adjustment block provided at an end of the pre-aperture base and in a direction orthogonal to the first adjustment block, the pin including the pin;
A reference master serving as a reference for adjusting the position of the pre-aperture array by the first adjustment block and the second adjustment block;
The charged particle beam exposure apparatus characterized in that the pre-aperture array means is positioned when the pins of the first adjustment block and the pins of the second adjustment block make point contact with the reference master .

Images