JP3872894B2 - Bump appearance inspection method and apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a bump appearance inspection method and apparatus.
[0002]
[Prior art]
In a flip chip in which bumps are arrayed and bonded to the surface of an LSI chip, high density mounting is possible by bonding the bump tops onto a substrate. If there is a difference in the height of the bump, bonding failure or unbonded defect occurs when bonded to the substrate, and if the bump diameter is too large, a defect that short-circuits with an adjacent bump occurs. These defects can be detected by an electrical test after the flip chip is mounted on the substrate, but it is preferable to detect it by an appearance inspection before mounting.
[0003]
Therefore, external inspection is performed by irradiating the inspection target with laser light, receiving the reflected light with a sensor, measuring one or more of the bump height, diameter, volume, etc. according to the principle of triangulation, etc. The device is used.
[0004]
[Problems to be solved by the invention]
However, since thousands of bumps are arranged on the chip, the ratio of the bump appearance inspection time to the chip formation time is large. In particular, a large number of chip areas 11 are formed on the wafer 10 as shown in FIG. 21A, and bumps 12 are arrayed and bonded to each chip area 11 before being divided into chips as shown in FIG. 19B. On the other hand, when the appearance inspection of the bump 12 is performed, it is required to increase the inspection speed.
[0005]
In view of such problems, an object of the present invention is to provide a bump appearance inspection method and apparatus capable of speeding up inspection by improving inspection efficiency.
[0006]
In the bump appearance inspection method for measuring the geometric amount of the bump of the inspection object in which the bump is arranged on the substrate, and determining pass / fail based on the measured value,
(1) Measure the geometric amount of the bump for the sample area on the inspection object,
(2) Estimating the geometric distribution of bumps on the substrate based on the value measured in step (1),
(3) Determine an inspection region based on the geometric amount distribution,
(4) measuring the geometric amount of the bump in order to perform the pass / fail judgment for the inspection region ;
Has steps.
[0007]
According to this bump appearance inspection method, the geometric amount of the bump in the sample area is measured, the inspection area estimated to contain defects is limited, and the bump is inspected only for this inspection area. There is an effect that a good high-speed inspection becomes possible.
In the bump appearance inspection method according to claim 2, in claim 1,
The substrate is a semiconductor wafer in which chip regions are arranged,
A chip area where a bump whose geometric amount is outside the predetermined range is determined to be defective.
[0008]
This bump appearance inspection method is particularly effective since the area to be inspected is wide, and has an effect that the inspection efficiency is improved as compared with the case of inspecting individual flip chips separated from the wafer.
According to a bump appearance inspection method of a third aspect, in the first aspect, the geometric amount includes one of a height, a diameter, or a volume of the bump.
[0009]
In the bump appearance inspection method according to claim 4, as shown in FIG. 11, for example, in the step (2), in the step (2), the inspection object is divided into a plurality of regions, and the geometry is divided for each of the divided regions. Estimate the amount.
According to this bump appearance inspection method, the geometrical distribution of bumps can be estimated more accurately than in the case where this division is not performed, and the inspection reliability is improved.
[0010]
In the bump appearance inspection method according to claim 5, as shown in FIG. 7 in claim 1, for example, in the step (2), the estimated value of the measured geometric amount is represented by the height of a point on the surface.
In the step (3), the inspection area is determined based on whether the height is within a set range.
[0011]
In the bump appearance inspection method according to the sixth aspect, as shown in FIG. 18A, for example, in the step (2), the local average and the standard deviation of the measured geometric amount are obtained in the step (2). Estimating the local mean and standard deviation distribution of the geometric amount for each of the plurality of divided regions from the value of
In the step (3), the inspection area is determined based on the distribution.
[0012]
In the bump appearance inspection method according to claim 7, as shown in FIG. 18B, for example, in step (2), the local maximum value and the minimum value of the measured geometric amount are obtained and obtained. From these values, a local maximum value and a minimum value of the geometric amount are estimated for each of the plurality of divided regions.
In the step (3), the inspection area is determined based on the distribution.
[0013]
In the bump appearance inspection method according to claim 8, as shown in FIG. 19, for example, in the bump appearance inspection method according to claim 1, the geometric amount measured in step (1) includes a deviation from a local average value greater than or equal to a predetermined value. The inspection density is increased in the above step (3) than in the case where it is not included.
According to this bump appearance inspection method, there is an effect that the inspection efficiency can be increased while maintaining the reliability of the inspection higher than when the inspection density is uniformly increased.
[0014]
In the bump appearance inspection method of claim 9, as shown in FIG. 1 and FIG.
(5) further comprising a step of storing data of the inspection area and the inspection result;
In step (3), the inspection density is determined based on the accumulated data.
According to this bump appearance inspection method, there is an effect that the inspection efficiency can be increased while maintaining the reliability of the inspection higher than when the inspection density is uniformly increased.
[0015]
In the bump appearance inspection method of claim 10, as shown in FIG. 9 for example in FIG. 9, in the step (5), the data is classified according to the bump formation conditions,
In the step (3), for each classified data, the inspection density is determined based on the accumulated data.
[0016]
In the bump appearance inspection method according to claim 11, the bump formation condition according to claim 10 is a plating bath for plating applied to the surface of the bump.
According to a bump appearance inspection method of a twelfth aspect, as shown in FIG. 15 in any one of the eighth to eleventh aspects, for example, in the step (3), the determined inspection area is expanded to its peripheral portion. Increase the inspection density.
[0017]
According to this bump appearance inspection method, there is an effect that the inspection density can be easily and effectively increased.
According to a bump appearance inspection method of a thirteenth aspect, as shown in FIG. 16 in any one of the eighth to eleventh aspects, for example, in the step (3), by including a chip area partially including the inspection area in the inspection area. Increase the inspection density.
[0018]
According to this bump appearance inspection method, there is an effect that the inspection density can be easily and effectively increased.
According to a bump appearance inspection method of a fourteenth aspect, in the step (3) according to any one of the eighth to eleventh aspects, the inspection region is determined based on whether the geometric amount is within a set range. The inspection density is changed by changing the setting range.
[0019]
According to a bump appearance inspection method of a fifteenth aspect, as in any one of the eighth to eleventh aspects, for example, as shown in FIG. 17, a sampling inspection is performed on an area excluding the inspection area determined in the step (3). As a result, the inspection density is increased.
In the bump appearance inspection apparatus according to claim 16, for example, as shown in FIGS. 1 and 5, a measuring apparatus that measures the geometric amount of the bump of the inspection object in which the bump is arranged on the substrate;
A storage device for storing bump arrangement data on the substrate;
With reference to the data, the measurement device measures the geometric amount of the bump for the sample region on the inspection object, estimates the geometric amount distribution of the bump on the substrate based on the measured value, and A processing device that determines an inspection region based on a geometric amount distribution, refers to the data, causes the measurement device to measure the geometric amount of the bump for the inspection region, and performs a pass / fail determination based on the measurement value; Have
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[First Embodiment]
FIG. 1 shows a schematic configuration of a bump appearance inspection apparatus.
A wafer 10 as an inspection object is mounted on an XYZ stage 20 via a θ stage 21. A large number of chip regions 11 are formed on the wafer 10 as shown in FIG. 21A, and bumps 12 are arranged on the chip regions 11 as shown in FIG. 19B. An optical scanning device 30 and a height detection device 40 are disposed above the wafer 10 and are fixed during use.
[0021]
In the optical scanning device 30, the light beam emitted from the laser 31 is scanned in the direction perpendicular to the paper surface by an AOD (acousto-optic deflector) 32, passes through the relay lenses 33 and 34 and the objective lens 35, and is perpendicular to the paper surface on the wafer 10. Scanned. That is, as shown in FIG. 2, the laser beam is scanned in the direction CW by the AOD 32, changed from the optical path L1 to L2, and from the optical path L2 to L3, and the light spot is scanned in the X direction in the drawing.
[0022]
In the height detection device 40, the light beam reflected on the wafer 10 passes through the objective lens 41 and the imaging lens 42 and is imaged on a light receiving surface of a PSD (optical position detector) 43. Currents I1 and I2 output from one end and the other end of the PSD 43 are converted into voltages and amplified by amplifiers 50 and 51, respectively. The outputs of the amplifiers 50 and 51 are converted into digital values D1 and D2 by A / D converters 52 and 53, respectively, and supplied to the height / brightness calculation circuit 54. The height / brightness calculation circuit 54 calculates the brightness B = (D1 + D2) of the light spot on the wafer 10 and the standardized height H = (D1−D2) / (D1 + D2).
[0023]
Here, when the AOD 32 is in a non-operating state, the processing device 55 passes through the stage drive circuit 56 so that the locus of the light spot formed on the wafer 10 by the optical scanning device 30 becomes L in FIG. Then, the XYZ stage 20 is driven. The processing device 55 drives the AOD 32 via the AOD drive circuit 57. The main scanning direction of the light spot when the AOD 32 is driven is the X direction perpendicular to the sub-scanning locus L. The optical scanning position information included in the position of the XYZ stage 20 and the output signal of the AOD drive circuit 57 is supplied from the stage drive circuit 56 and the AOD drive circuit 57 to the address calculation circuit 58, respectively. The address calculation circuit 58 calculates the storage address of the height H based on these values, and addresses the memory 59. The height H from the height / brightness calculation circuit 54 is written to this address.
[0024]
The processing device 55 controls the light output of the laser 31 so that the brightness B from the height / brightness calculation circuit 54 becomes a predetermined value, and the intensity of incident light to the height detection device 40 is low and the brightness is low. When B cannot be set to the predetermined value, the memory 59 is disabled.
The memory 59 is divided into, for example, storage areas MA and MB. The height H is DMA-transferred to one of both areas, and the other data in both areas is processed by the processing unit 55 in parallel with this, The other is switched alternately.
[0025]
The storage device 60 stores a bump information file 61 and an inspection information file 62. The bump information file 61 includes bump arrangement information extracted from the CAD data, and bump formation conditions such as a bump material and a plating tank number used when the plating is applied to the bump. The processing device 55 reads the bump arrangement information from the bump information file 61 and drives the stage driving circuit 56 and the AOD driving circuit 57 based on this information.
[0026]
A console 63 including an input device such as a keyboard and a mouse and a display device is connected to the processing device 55.
In FIG. 4A, bumps 121 to 124 are bonded on pads 131 to 134 formed on the surface of the wafer 10, respectively. When light is scanned onto the bumps 121 to 124 with the AOD 32 and the height H is stored in the memory 59, a distribution of the height H as shown in FIG. 4B is obtained in the memory 59. 121T to 124T indicate the heights of the tops of the bumps 121 to 124, respectively. Prior to this optical scanning, the heights of three or more marks, pads or wirings (not shown) formed on the substrate surface of the wafer 10 are measured in the same manner as described above, and the substrate surface S is shown in FIG. It is determined as shown in FIG. Heights h1 to h4 of the top portions 121T to 124T from the substrate surface S are obtained by the processing device 55.
[0027]
Next, with reference to FIG. 5, the inspection procedure by the processing device 55 will be described. In the following, the step identification codes in the figure are shown in parentheses.
(S1) The inspection target wafer 10 as shown in FIG. 6 in which a large number of chip regions 11 are formed is displayed on the display device of the console 63. The operator operates the input device of the console 63 to set a sample area on the wafer 10. In FIG. 6, hatched strip-like crossed sample areas SA and SB are shown.
[0028]
(S2) When it is detected that the wafer 10 is transferred and mounted on the θ stage 21 by a transfer device (not shown), the process proceeds to step S3.
(S3) While scanning the set sample region with the XYZ stage 20 and the AOD 32, the bump height is measured as described above.
(S4) The height distribution of all the bumps on the wafer 10 is estimated from the measurement result.
[0029]
That is, the average bump height HM is obtained for each local area in the sample area, for example, the chip area, and approximated by a straight line LA determined by the least square method as shown in FIG. The x mark in FIG. 7 indicates this average value, and the circle indicates the bump whose height is this average value. Similarly, an approximate straight line is obtained for the sample region SB of FIG. 6, and the bump height distribution on the wafer 10 is estimated on a plane PL passing through both straight lines.
[0030]
(S5) As shown in FIG. 7, a region where the approximate plane PL is higher than a predetermined upper limit value UL1 and a portion lower than a predetermined lower limit value LL1 is determined as an inspection region. These inspection areas are, for example, areas partitioned by dotted lines shown in FIG.
The upper limit value UL1 and the lower limit value LL1 are, for example, a ratio between the defect detection rate in the entire wafer inspection and the defect detection rate in the inspection region obtained by setting the upper limit value UL1 and the lower limit value LL1, is approximately 1. In addition, the inspection area is determined to be as narrow as possible.
[0031]
(S6) The bump height is measured by scanning only the inspection area, and if even one bump with a height H outside the predetermined range is found in the chip area, it is determined that the chip area is defective.
(S7) The sample area, inspection area, and inspection result are stored in the inspection information file 62 as inspection information.
[0032]
Inspection information is stored in the inspection information file 62, and statistical analysis is performed in order to increase the reliability of inspection and the inspection efficiency. For example, if a plating is applied to the surface of the bump 12, the plating tank number of the plating is also stored in the inspection information file 62. Then, for each number, as shown in FIG. 9, the average value of the defect rates, which is the ratio of the number of defective chips to the number of chips in the inspection area, is obtained.
[0033]
(S8) For the next wafer 10 to be inspected, information is read from the bump information file 61, and the information stored in the inspection information file 62 is referred to determine whether or not the inspection density should be updated. Here, the inspection density is the ratio of the inspection area to the entire chip area on the wafer 10 or the ratio of the inspection area to the local bump area.
[0034]
For example, in FIG. 9, if the average defect rate is equal to or greater than the set value R0, it is determined that updating is necessary. If the number of defective chips with respect to the number of chips on the boundary line of the inspection area is equal to or greater than a set value, it is determined that updating is necessary.
(S9) If it is determined that updating is necessary, the process proceeds to step S10, and if it is determined that updating is not necessary, the process proceeds to step S11.
[0035]
(S10) The inspection density is updated so that the determination of the inspection area becomes more appropriate. For example, in FIG. 9, if the average defect rate is equal to or greater than the set value R0, the inspection density is increased by narrowing the space between the upper limit value UL1 and the lower limit value LL1 in FIG.
(S11) Waiting for the wafer to be discharged from the wafer 10, the process proceeds to step S2.
[0036]
According to the first embodiment, an area that is estimated to contain a defect is determined as an inspection area, and the bump height is measured for only the inspection area to determine whether it is acceptable. Therefore, efficient high-speed inspection is possible. Further, by utilizing the information stored in the inspection information file 62, a more appropriate inspection area can be determined, and the reliability of the inspection is ensured.
[0037]
[Second Embodiment]
In the second embodiment of the present invention, in FIG. 10, the sample area SA is divided into areas A1, A2, and A3, and as shown in FIG. 11, the bump height is approximated by straight lines LA1, LA2, and LA3. . Similarly, the sample region SB is divided into regions B1, B2, and B3, and the bump height is approximated by a straight line for each of the regions. And the bump height of each area | region divided with the dotted line in FIG. 10 is approximated by the plane through which these straight lines pass.
[0038]
Other points are the same as those in the first embodiment.
According to the second embodiment, the bump height distribution can be estimated more accurately than in the case of the first embodiment, and the inspection reliability is improved.
[Third Embodiment]
FIG. 12 shows how to take the sample area SC of the third embodiment of the present invention.
[0039]
The wafer 10 is divided by dotted lines, sample areas SC are set in the respective areas, and the height of the divided areas including the sample areas SC is estimated based on the sample areas SC.
Other points are the same as those in the first embodiment.
[Fourth Embodiment]
FIG. 13 shows how to take a sample area according to the fourth embodiment of the present invention.
[0040]
A central sample area SD1 on the wafer 10 and a ring-shaped sample area SD2 around the sample area SD1 are set. As shown in FIG. 14, the bump height in the sample region SD2 is approximated by a curve or a broken line LC passing through the average height HM of each local region, for example, each chip region. The bump height on the wafer 10 is a surface obtained by rotating a straight line passing through this point and the point on the approximate line LC around the point of the average bump height in the sample region SD1. Is estimated. The dotted line in FIG. 13 shows a part of this straight line.
[0041]
Other points are the same as those in the first embodiment.
[Fifth Embodiment]
In the fifth embodiment of the present invention, as shown in FIG. 15, when the boundary line of the inspection area determined in step S5 of FIG. 5 is the dotted line shown in FIG. Expand to the periphery and use the alternate long and short dash line as the boundary.
[0042]
This enlargement may be performed when it is determined in step S9 in FIG. 5 that the inspection density needs to be updated.
Other points are the same as those in the first embodiment.
[Sixth Embodiment]
In the sixth embodiment of the present invention, when the boundary line of the inspection area determined in step S5 of FIG. 5 is the dotted line shown in FIG. 16, the boundary line of the inspection area indicated by the dotted line is further included in this step S5. The inspection area is expanded to the chip area.
[0043]
This enlargement may be performed when it is determined in step S9 in FIG. 5 that the inspection density needs to be updated.
Other points are the same as those in the first embodiment.
[Seventh Embodiment]
In the seventh embodiment of the present invention, when the boundary line of the inspection area determined in step S5 in FIG. 5 is the dotted line shown in FIG. 17, the inspection area is further enlarged in this step S5 as in FIG. The boundary line is shifted to the alternate long and short dash line, and then the inspection area is expanded to the chip area including the alternate long and short dash line as in the case of FIG. Further, the inspection reliability is improved by performing a sampling inspection on the hatched chip region for the non-inspection region.
[0044]
This enlargement may be performed when it is determined in step S9 in FIG. 5 that the inspection density needs to be updated. Further, in the inspection area enlarged as described above, for example, the bump height is measured for each line of the bump 12, that is, the local inspection density is reduced, and the inspection is made faster than the other inspection areas. Also good. Further, for the inspection area before enlargement, for example, the local inspection density may be increased as the deviation of the approximate plane PL from (UL1 + LL1) / 2 in FIG. 7 increases.
[0045]
Other points are the same as those in the first embodiment.
[Eighth Embodiment]
In the eighth embodiment of the present invention, as shown in FIG. 18A, the average height HM and the standard deviation σ are obtained for each local region in the sample region, for example, each chip region, and (HM + σ) and (HM) are obtained. The approximate surface of -σ) is obtained for each divided region shown in FIG. 10, and if the surface of (HM + σ) or (HM-σ) is greater than or equal to the preset upper limit value UL2 or less than the lower limit value LL2, it is determined as the inspection region. To do.
[0046]
FIG. 18B is a modification of FIG. 18A, in which the maximum value HMmax and the minimum value HMmin of the bump height are obtained for each local region in the sample region, for example, each chip region, in the same manner as described above. An approximate surface of HMmax and an approximate surface of HMmin are obtained, and if these are respectively equal to or higher than a preset upper limit value UL3 or lower limit value LL3, an inspection region is determined.
[0047]
Other points are the same as those in the first embodiment.
[Ninth Embodiment]
In the ninth embodiment of the present invention, as shown in FIG. 19, the deviation ΔHM of the average value HM of the bump height in each local region in the sample region, for example, each chip region, from the approximate straight line LD is equal to or larger than a predetermined value. In this case, in step S5 of FIG. 5, for example, the inspection area is enlarged as described above, or the range between the upper limit value UL1 and the lower limit value LL1 is narrowed, so that the inspection density is increased as compared with the case other than that, Improve inspection reliability.
[0048]
Other points are the same as those in the first embodiment.
[Tenth embodiment]
In general, since there is a positive correlation between the height and the diameter of the bump 12, by measuring the diameter of the bump instead of measuring the height of the bump, and using this diameter instead of the above height, You may perform the process similar to the above.
[0049]
As shown in FIG. 20A, with respect to the bump 12 and its vicinity, the laser beam is sub-scanned in the left-right direction on the XYZ stage 20 while performing main scanning in the direction perpendicular to the paper surface with the AOD 32. By binarizing B and writing it in the memory 59, a bright and dark image as shown in FIG. 20B is obtained. The bump diameter 2r is measured from this image.
[0050]
Note that the present invention includes various other modifications.
For example, by measuring both the height and diameter of the bump, approximating the value proportional to the product of the square of the diameter and the height to the volume of the bump 12, and using this volume instead of the height, the same as above. You may perform the process of. Further, a value proportional to the cube of the height or diameter of the bump may be approximated to the volume of the bump 12.
[0051]
The inspection target is not limited to the wafer on which the flip chip area is formed, and may be individual flip chips separated from the wafer.
Line [Brief description of drawings]
FIG. 1 is a diagram showing a schematic configuration of a bump appearance inspection apparatus according to a first embodiment of the present invention.
2 is an explanatory diagram of an optical path of the optical scanning device in FIG. 1. FIG.
FIG. 3 is a diagram illustrating a sub-scanning trajectory by an XYZ stage and a main scanning direction by an AOD.
4A to 4C are explanatory diagrams of a bump height measuring method. FIG.
FIG. 5 is a schematic flowchart showing a bump appearance inspection procedure.
FIG. 6 is a diagram showing a sample region on a wafer.
FIG. 7 is an explanatory diagram of an approximate straight line of bump height and an inspection area determination method.
FIG. 8 is a diagram showing an inspection area on a wafer.
FIG. 9 is a bar graph showing a defect rate in an inspection area for each plating tank.
FIG. 10 is a diagram illustrating division of a sample area and division of a height estimation area according to the second embodiment of the present invention.
FIG. 11 is a view corresponding to FIG. 7 of the second embodiment of the present invention.
FIG. 12 is a diagram illustrating a sample area and a divided height estimation area according to the third embodiment of the present invention.
FIG. 13 is an explanatory diagram of a sample area and a height estimation surface according to the fourth embodiment of the present invention.
14 is a diagram showing an approximate curve for bump height in the ring-shaped sample region of FIG. 13;
FIG. 15 is an enlarged explanatory view of an inspection area according to a fifth embodiment of the present invention.
FIG. 16 is an enlarged explanatory view of an inspection area according to a sixth embodiment of the present invention.
FIG. 17 is an enlarged explanatory view of an inspection area according to a seventh embodiment of the present invention.
FIG. 18A is an explanatory diagram for determining an inspection area according to an eighth embodiment of the present invention, and FIG. 18B is a diagram showing a modification thereof;
FIG. 19 is a diagram illustrating abnormal height values in a sample region according to the ninth embodiment of the present invention.
20A and 20B are explanatory diagrams of reflected light brightness distribution according to the ninth embodiment of the present invention, where FIG. 20A is an explanatory diagram of light scanning with respect to a bump, and FIG. FIG.
FIG. 21A is a plan view of a wafer on which a chip area is formed, and FIG. 21B is a bump arrangement diagram on the chip area.
[Explanation of symbols]
10 Wafer 11 Chip area 12, 121-124 Bump 20 XYZ stage 30 Optical scanning device 31 Laser 32 AOD
40 Height detector 43 PSD
54 Height / brightness calculation circuit 55 Processing device 59 Memory 61 Bump information file 62 Inspection information file

Claims (16)

In the bump appearance inspection method for measuring the geometric amount of the bump of the inspection object in which the bump is arranged on the substrate, and determining pass / fail based on the measured value,
A first step of measuring a geometric amount of the bump per sample area on the inspection object ;
A second step of estimating a geometric distribution of bumps on the substrate based on the value measured in the first step ;
A third step of determining an inspection region based on the geometric amount distribution ;
A fourth step of measuring the geometric amount of the bump to perform the pass / fail determination for the inspection region ;
Bumps appearance inspection method characterized by having a. The substrate is a semiconductor wafer in which chip regions are arranged,
Determining a chip area where there is a bump whose geometric amount is outside a predetermined range as defective,
The bump appearance inspection method according to claim 1, wherein:   The bump appearance inspection method according to claim 1, wherein the geometric amount includes one of a height, a diameter, and a volume of the bump. In the second step, the inspection object is divided into a plurality of regions, and the geometric amount is estimated for each of the divided regions.
The bump appearance inspection method according to claim 1, wherein: In the second step, the estimated value of the measured geometric amount is represented by the height of a point on the surface,
In the third step, the inspection area is determined based on whether the height is within a set range.
The bump appearance inspection method according to claim 1, wherein: In the second step, local averages and standard deviations of the measured geometric quantities are obtained, and local averages and standard deviations of the geometric quantities are obtained for each of the plurality of divided regions from these obtained values. Estimate the distribution,
In the third step, the inspection area is determined based on the distribution.
The bump appearance inspection method according to claim 4, wherein: In the second step, the local maximum value and the minimum value of the measured geometric amount are obtained, and the local maximum value and the minimum value of the geometric amount are obtained for each of the plurality of divided regions from these obtained values. Estimate the value,
In the third step, the inspection area is determined based on the distribution.
The bump appearance inspection method according to claim 4, wherein: In the first step, the inspection density is increased in the third step than in the case where the measured geometric amount includes a deviation from the local average value that is greater than or equal to a predetermined value. To
The bump appearance inspection method according to claim 1, wherein: A fifth step of accumulating data of the inspection area and the inspection result;
In the third step, an inspection density is determined based on the accumulated data.
The bump appearance inspection method according to claim 1, wherein: In the fifth step, the data is classified according to the bump formation conditions,
In the third step, for each of the classified data, the inspection density is determined based on the accumulated data.
The bump appearance inspection method according to claim 9. The formation condition of the bump in the fifth step is a plating tank for plating applied to the surface of the bump.
The bump visual inspection method according to claim 10. In the third step, the inspection density is increased by enlarging the determined inspection area to the periphery thereof,
The bump appearance inspection method according to any one of claims 8 to 11, wherein: In the third step, the inspection density is increased by including a chip region including a part of the inspection region in the inspection region.
The bump appearance inspection method according to any one of claims 8 to 11, wherein: In the third step, the inspection area is determined based on whether the geometric amount is within a set range, and the inspection density is changed by changing the set range.
The bump appearance inspection method according to any one of claims 8 to 11, wherein: The inspection density is increased by performing a sampling inspection on the area excluding the inspection area determined in the third step.
The bump appearance inspection method according to any one of claims 8 to 11, wherein: A measuring device for measuring the geometric amount of the bump of the inspection object in which the bump is arranged on the substrate;
A storage device for storing bump arrangement data on the substrate;
With reference to the data, the measurement device measures the geometric amount of the bump for the sample region on the inspection object, estimates the geometric amount distribution of the bump on the substrate based on the measured value, and A processing device that determines an inspection region based on a geometric amount distribution, refers to the data, causes the measurement device to measure the geometric amount of the bump for the inspection region, and performs a pass / fail determination based on the measurement value; ,
A bump appearance inspection apparatus characterized by comprising:

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