JP3784234B2 - Antireflection film comprising silica film and method for producing the same - Google Patents
Antireflection film comprising silica film and method for producing the same Download PDFInfo
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Description
【０００１】
【発明の属する技術分野】
本発明は、薄膜トランジスタや単結晶薄膜シリコン太陽電池を作製するためのレーザアニール時やフォトレジスト工程において用いられる反射防止膜、太陽電池やレンズでの多重干渉を防止するため用いられる反射防止膜などの基体上に形成された反射防止膜およびその製法に関する。
【０００２】
【従来技術】
車両用のフロントガラス、建築用・建装用ガラス、表示パネル、ディスプレイなどの表示部材、レンズ、眼鏡などの光学部品、太陽電池パネルなど種々の製品に高い光透過性と低反射性能を有する膜、すなわち反射防止膜が広範に使用されている。また、薄膜トランジスタや単結晶薄膜シリコン太陽電池を作製するためのレーザアニール時やフォトレジスト工程においても反射防止膜が使用される。
【０００３】
ＭｇＦ2 は、低屈折率材料（屈折率１．２２）として知られており、これを多孔質構造にしたものがある（特開平７−１５０３５６号公報）。また、多孔質のＭｇＦ2 膜は、防曇性被膜としても知られる（特開平１１−７７８７６号公報）。また、ＳｉＯ2 は、屈折率の小さい材料（屈折率１．４４〜１．４７）であり反射防止膜として用いられる。基体をケイ酸ガラスとして表面を酸処理や電気化学的エッチング処理すれば、多孔質構造のＳｉＯ2からなる反射防止膜が得られる（特開平７−３００３４６号公報、特表平１０−５０８１１３号公報）。
【０００４】
また、ゲル法などで形成した塗装層に多孔性ＳｉＯ2 などの無機微粒子を包含させて熱処理や光照射などを用いてネットワークの間隙に微細孔を形成する方法も種々知られている（特開平６−３４５４８７号公報、特開平７−４８１１７号公報、特開平７−４８５２７号公報、特開平１０−１３０５３７号公報、特開平１０−１３３００２号公報、特表平１０−５１０８６０号公報、特開平１１−２８１８０２号公報）。無機微粒子とビヒクル成分を基板上に塗布後、活性化ガス処理を施すことで微小空孔と微粒子状無機物より構成される低反射膜を得る方法も知られている（特開昭６１−９３４０２号公報）。
【０００５】
透明材料中に空孔を分散させた反射防止膜（特開平６−３５０１号公報）、吸水性膜、多孔質膜、非晶質弗素樹脂膜の３層からなる反射防止膜（特開平１０−３１１９０２号公報）、含弗素ポリマー層にミクロボイドを有する多孔質光学材料（特開平１０−２８２３０５号公報）など膜の中に微小空孔を分散させる方法も知られている。特開平９−３１４７１５号公報には、平均粒径０．０１〜０．２０μｍの高分子重合体微粒子を含む処理剤をコーティングした後加熱処理して平均径１０〜１５０ｎｍの空孔を有する反射防止膜が開示されている。
【０００６】
レーザ耐力の高い反射防止膜の製法としては、ＳｉＯ2 とＮａＦとからなる混合膜を蒸着してＮａＦを溶解してＳｉＯ2 からなる多孔性薄膜を形成する方法が知られている（特開昭６１−１７０７０２号公報、特開平６−１６７６０１号公報）。
【０００７】
【発明が解決しようとする課題】
レーザアニールや露光などの加工技術及び太陽電池やレンズなどでは反射による光の多重干渉が大きな問題になる。このときの反射防止膜の屈折率は空気の屈折率１とガラスの１．５程度の平方根をとった１．２から１．２５程度の値が最も理想的な値となる。そこで、紫外から可視光領域でも効率よく反射を防止するための材料として、この波長領域で１．２５程度の屈折率をもつ理想的な材料が求められている。
【０００８】
しかしながら、このような理想的な物質は存在しないので、従来１．３８程度の屈折率を有するＭｇＦ2 をコーティング材料として用いている。ＭｇＦ2 などの物質を屈折率からその物質中の波長を求め、波長の１／４の膜厚を持つ薄膜を反射防止膜として基体表面にコーティングしてもこの問題は解消できるが、基板表面に反射防止膜を作製した場合、レーザアニールや露光などの加工技術ではレーザ照射後にこの膜を剥離する必要がありプロセスを増やすことになり作製コストをあげることになり有効ではない。
【０００９】
大粒径シリコン薄膜を作製するために光の位相差を利用したマスクを用いることはすでに論文などで報告されている。この方法では、基板とマスクを密着または極めて狭い幅で配置してレーザを照射する必要がある。しかしながら、基板やマスクの反りなどの問題や基板とマスクのスペースを調整する装置の精度などの問題からレーザ光の干渉を生じ、目的とするエネルギー分布を得ることは難しい。また、レーザのエネルギーによる発熱のため反射防止膜の組成変化という劣化も生じる。そのため、耐レーザ性の膜であって、レーザ照射後も剥離する必要のない優れた物性を有する反射防止膜が求められている。
【００１０】
【課題を解決するための手段】
反射防止膜は光を透過させるためには、光を乱反射させないような微細な穴が必要である。この微細な穴を形成する方法として、本質的に熱的に安定であると考えられる多孔質シリカ膜が適する。本発明者は、アルキル基成分又はフェニル基成分を含むシリカ膜を基体に堆積し、アルキル基成分又はフェニル基成分を気化させて光を散乱することのない微細な気孔を膜中に形成した多孔質シリカ膜を用いることによって上記の課題を解決できることを見出した。
【００１１】
すなわち、本発明は、基体上にＣＶＤ法を用いて気相で堆積することにより形成されたアルキル基成分又はフェニル基成分を含むシリカ膜中に含まれるアルキル基成分又はフェニル基成分が脱離されたことを特徴とするシリカ膜からなる反射防止膜である。
さらに、本発明は、基体上にＣＶＤ法を用いてアルキル基成分又はフェニル基成分を含むシリカ膜を堆積して、その後の真空で、３００℃以上の加熱処理により膜中からアルキル基成分又はフェニル基成分を脱離させることを特徴とする上記の反射防止膜の製法である。
【００１２】
気孔を有するシリカ膜の形成法の１つ目としては、ＣＶＤ法を用いて低温でアルキル基成分又はフェニル基成分を含むシリカ膜を基体に堆積して、その後の熱処理によりシリカ膜中からこれらアルキル基成分又はフェニル基成分を脱離して微細な気孔を生じさせるものである。この方法としては、本発明者が先に発明した基板上に水素を含まないシリコン系絶縁膜を堆積する方法（特開平１０−１８９５８２号公報）において、反応容器中に水素を含まないシリコン系原料と第３種アミン、アルキル基を含む原料を気体として導入して反応させる方法を用いることが好ましい。
【００１３】
この方法によれば、アルキル・アミンなどの第３種アミンはダイポールモーメントを有するためにテトラ・イソシアネート・シランおよびビスジメチルアミノジフェニルシランやイソシアン酸フェニルなどのアルキル基又はフェニル基を含む化合物からなる原料と低温で反応してアルキル基成分又はフェニル基成分を含むシリカ膜を生じる。アルキルアミン系の原料の強い分極性を利用することによりテトラ・イソシアネート・シランを２００℃以下の低温で熱分解でき、気相で堆積した良質のシリカ膜を形成できる。
【００１４】
このシリカ膜にはアルキル基成分又はフェニル基成分が５０容積％程度まで含有されるようにすることができ、シリカ膜を３００℃以上で加熱するとアルキル基成分又はフェニル基成分は気化しシリカ膜から脱離する。これにより１０ｎｍ未満の微細な気孔がシリカ膜中に形成される。気孔の容積は０．１〜５０％程度にすることができる。
【００１５】
また、この方法では、成膜中にテトラ・イソシアネート・シランとトリメチルアミンとイソシアン酸フェニルなどのフェニル基を含む化合物のガスの流量を変えることで膜中の気孔率を変化させることができる。これにより、屈折率の値を広い範囲で制御できるので広範囲の波長領域に亘る反射防止膜を実現できる。
【００１６】
ＣＶＤ法では、原料ガスの流れを制御することで基板上に均一な膜を容易に形成できるのでマスク上や基板であっても容易に形成できる。また、原料として液体を使わずにガスで成膜するので熱処理時に問題となる膜の収縮がなく、原料がガスなのでＵＳＬＩなどの表面に存在する微細凹凸をうまく埋め込むことができ、また、反射膜として用いた後にそのまま膜を用いても膜中にＯＨが残留しないのでＵＳＬＩに用いても安定性に優れる。また、基本的にシリコンベースの膜なので、ＭｇＦ2に比べて硬く耐摩耗性や耐薬品性に優れる。珪酸ガラスを酸処理して形成した膜のようにシリコンＵＳＬＩプロセスでは汚染物質として問題になるナトリウムやカリウムは膜中に含まれない。
【００１７】
２つ目の方法は、液体のシリカ膜すなわちスピンオングラス（ＳＯＧ）と呼ばれる方法である。スピンコートして成膜する時に、ＳＯＧ中に含まれるヨウ素の量とシンナーの量を制御することで膜中の気孔の量を制御できる。ヨウ素とＳＯＧを加えた体積とシンナーの体積の比を４０％：６０％と一定にして、ヨウ素のＳＯＧ（例えば、東京応化学社製のＯＣＤ−Ｔ１０）に対する重量比を１５％から２５％まで変えることで屈折率を１．３２から１．１まで変化させることができる。
【００１８】
この場合に、ヨウ素とＳＯＧの比を変えて屈折率が異なる膜を重ねることで１つ目の方法のように広範囲にわたる反射防止膜を実現できる。この方法でも、ＳＯＧの粘度やスピンコーティング時の回転速度を制御することで均一な薄膜を容易に形成できる。
【００１９】
この方法を用いてアルキル基成分又はフェニル基成分を含むシリカ膜を堆積して、その後の熱処理により膜中からこれらアルキル基成分又はフェニル基成分を脱離して微細な気孔を生じさせる。これにより膜の屈折率を変化させることができる。
【００２０】
図１は、本発明の反射防止膜の構造を原理的に示す概略断面図である。図１（ａ）は、
マスク又は基板１に均一の大きさの気孔３を有する均一気孔反射防止膜２を上記方法により作製したものである。図１（ｂ）は、深さ方向に気孔３の大きさを変化させて気孔の大きさが異なる反射防止膜２を形成したものである。
【００２１】
【発明の実施の形態】
図２は、本発明の反射防止膜を製造する方法の説明図である。図２において、反応室（反応容器）１に、第三種アミンを供給管（Ａ）２から供給し、水素を含まないシリコン原料とアルキル基又はフェニル基を含む化合物からなる原料を供給管（Ｂ）３から供給し、反応させて反応室１及び基板５表面で、反応生成物７を生成させて、アルキル基成分又はフェニル基成分を含むシリカ膜６を基板５に堆積する。残余の反応原料ガスは排気管４から排気する。
【００２２】
第３種アミンとしては、例えば、トリメチルアミン、ジメチルモノエチルアミン、モノメチルジエチルアミン、トリエチルアミン、などのトリアルキルアミン、またはトリフルオロメチルアミン、トリフルオロエチルアミンなどのトリアルキルアミンの水素をハロゲンで置換したものを用いることができる。
【００２３】
供給管Ｂ３からは、シアネート基を有する化合物からなる原料とアルキル基又はフェニル基またはアルキル基又はフェニル基とシアネート基を同時に含む化合物からなるシリコン系原料、またはアルキル基又はフェニル基とシアネート基を有する化合物からなる原料とシアネート基を有する化合物からなるシリコン原料を供給する。例えば、テトライソシアネートとビスジメチルアミノジフェニルシラン、フェニルトリイソシアネート、フェニレンジイソシアネートを供給する。
【００２４】
図２に示す構成において、アルキル基又はフェニル基とシアネート基を同時に有する化合物からなる原料、またはアルキル基又はフェニル基を含む化合物からなる原料とシアネート基を含む化合物からなる原料の混合物であるシリコン系原料を使用して、ガスにより直接、またはその蒸気をキャリアガスを使用して反応室に導入する。供給管（Ａ）２から供給された第３種アミンと供給管（Ｂ）３から供給されたシリコン原料とが反応室１において反応し、反応生成物７が低温形成される。
【００２５】
上記のとおりＣＶＤ法を用いて成膜した後、真空加熱炉内でアルキル基成分又はフェニル基成分を含むシリカ膜を真空で３００℃以上で加熱処理することによってアルキル基成分又はフェニル基成分は気化しシリカ膜から脱離する。これにより１０ｎｍ未満の微細な気孔がシリカ膜中に形成される。
【００２６】
図３は、ＳＯＧをスピンコートするときに一層及び多層構造にして気孔を膜中に形成する方法を示す。多層構造では重ね塗りすることで気孔率を深さ方向に亘って制御することができる。
【図面の簡単な説明】
【図１】図１は、本発明の反射防止膜の構造を原理的に示す概略断面図である。
【図２】図２は、本発明の反射防止膜をＣＶＤ法で製造する方法の説明図である。
【図３】図３は、本発明の反射防止膜をスピンコート法で製造する方法の説明図である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an antireflection film used in laser annealing and a photoresist process for manufacturing a thin film transistor and a single crystal thin film silicon solar cell, an antireflection film used to prevent multiple interference in a solar cell and a lens, etc. The present invention relates to an antireflection film formed on a substrate and a method for producing the same.
[0002]
[Prior art]
Films that have high light transmission and low reflection performance for various products such as vehicle windshields, architectural and building glass, display panels, display members such as displays, optical components such as lenses and glasses, solar battery panels, That is, antireflection films are widely used. An antireflection film is also used during laser annealing or a photoresist process for manufacturing a thin film transistor or a single crystal thin film silicon solar cell.
[0003]
MgF 2 is known as a low refractive index material (refractive index 1.22), and there is a material having a porous structure (Japanese Patent Laid-Open No. 7-150356). A porous MgF 2 film is also known as an antifogging film (Japanese Patent Laid-Open No. 11-77876). SiO 2 is a material having a low refractive index (refractive index: 1.44 to 1.47) and is used as an antireflection film. When the substrate is made of silicate glass and the surface is subjected to acid treatment or electrochemical etching treatment, an antireflection film made of SiO 2 having a porous structure can be obtained (Japanese Patent Laid-Open No. 7-300346, Japanese Patent Laid-Open No. 10-508113). ).
[0004]
Various methods are also known in which fine particles are formed in the gaps of the network using heat treatment, light irradiation, etc. by including inorganic fine particles such as porous SiO 2 in a coating layer formed by a gel method or the like (Japanese Patent Laid-Open No. Hei. JP-A-6-345487, JP-A-7-48117, JP-A-7-48527, JP-A-10-130537, JP-A-10-13002, JP10-510860, JP-A-11. -281802. There is also known a method for obtaining a low reflection film composed of fine pores and fine inorganic particles by applying an inorganic gas and a vehicle component on a substrate and then applying an activated gas treatment (Japanese Patent Laid-Open No. 61-93402). Publication).
[0005]
Antireflection film comprising three layers of an antireflection film (Japanese Patent Laid-Open No. 6-3501) in which pores are dispersed in a transparent material, a water absorbing film, a porous film, and an amorphous fluorine resin film (Japanese Patent Laid-Open No. 10-2010) 311902), a porous optical material having a microvoid in a fluorine-containing polymer layer (Japanese Patent Laid-Open No. 10-282305), and a method for dispersing micropores in a film are also known. Japanese Patent Application Laid-Open No. 9-314715 discloses an antireflection coating having pores having an average diameter of 10 to 150 nm after coating with a treatment agent containing polymer polymer fine particles having an average particle diameter of 0.01 to 0.20 μm. A membrane is disclosed.
[0006]
As a method for producing an antireflection film having a high laser resistance, a method is known in which a mixed film composed of SiO 2 and NaF is vapor-deposited to dissolve NaF to form a porous thin film composed of SiO 2 (Japanese Patent Application Laid-Open No. Sho). 61-170702, JP-A-6-167601).
[0007]
[Problems to be solved by the invention]
In processing techniques such as laser annealing and exposure, and solar cells and lenses, multiple interference of light due to reflection becomes a big problem. At this time, the refractive index of the antireflection film is most ideally about 1.2 to 1.25, which is the refractive index 1 of air and the square root of about 1.5 of glass. Therefore, an ideal material having a refractive index of about 1.25 in this wavelength region is required as a material for efficiently preventing reflection in the ultraviolet to visible light region.
[0008]
However, since such an ideal substance does not exist, MgF 2 having a refractive index of about 1.38 is conventionally used as a coating material. This problem can be solved by obtaining the wavelength of a substance such as MgF 2 from the refractive index, and coating the substrate surface with a thin film having a thickness of 1/4 of the wavelength as an antireflection film. When an antireflection film is produced, a processing technique such as laser annealing or exposure requires the film to be peeled after laser irradiation, which increases the number of processes and increases the production cost, and is not effective.
[0009]
The use of a mask that utilizes the phase difference of light to produce a large grain silicon thin film has already been reported in papers. In this method, it is necessary to irradiate the laser with the substrate and the mask in close contact or with a very narrow width. However, it is difficult to obtain a target energy distribution by causing interference of laser light due to problems such as warpage of the substrate and mask and problems such as accuracy of an apparatus for adjusting the space between the substrate and the mask. In addition, deterioration due to a change in the composition of the antireflection film also occurs due to heat generated by the energy of the laser. Therefore, an antireflection film having excellent physical properties that is a laser resistant film and does not need to be peeled off even after laser irradiation is required.
[0010]
[Means for Solving the Problems]
In order for the antireflection film to transmit light, a fine hole that does not diffusely reflect light is required. As a method for forming these fine holes, a porous silica film considered to be inherently thermally stable is suitable. The present inventor has a silica film containing an alkyl group component or a phenyl group component is deposited on the substrate, and to vaporize alkyl component or a phenyl group component forms fine pores that does not scatter light in the film porous It has been found that the above problems can be solved by using a porous silica film.
[0011]
That is, according to the present invention, an alkyl group component or a phenyl group component contained in a silica film containing an alkyl group component or a phenyl group component formed by deposition in a gas phase using a CVD method on a substrate is eliminated. This is an antireflection film made of a silica film.
Furthermore, the present invention deposits a silica film containing an alkyl group component or a phenyl group component on a substrate using a CVD method, and then heat treatment at 300 ° C. or higher in vacuum to heat the alkyl group component or phenyl group from the film. it is a preparation of the above anti-reflection film which comprises bringing a group component desorbed.
[0012]
The first method of forming a silica film having pores, a silica film containing an alkyl group component or a phenyl group components at low temperatures is deposited on the substrate by CVD, the alkyl silica film by the subsequent heat treatment The base component or the phenyl group component is eliminated to generate fine pores. As this method, in the method of depositing a silicon-based insulating film containing no hydrogen on the substrate previously invented by the present inventor (Japanese Patent Laid-Open No. 10-189582), a silicon-based material containing no hydrogen in the reaction vessel It is preferable to use a method in which a raw material containing a third amine and an alkyl group is introduced as a gas and reacted.
[0013]
According to this method, since the third type amine such as alkyl amine has a dipole moment, the raw material is composed of a compound containing an alkyl group or a phenyl group such as tetraisocyanate silane and bisdimethylaminodiphenylsilane or phenyl isocyanate. And a silica film containing an alkyl group component or a phenyl group component . By utilizing the strong polarizability of alkylamine-based raw materials, tetra-isocyanate-silane can be thermally decomposed at a low temperature of 200 ° C. or lower, and a high-quality silica film deposited in the gas phase can be formed.
[0014]
The silica film can contain up to about 50% by volume of an alkyl group component or a phenyl group component . When the silica film is heated at 300 ° C. or higher, the alkyl group component or the phenyl group component is vaporized and is removed from the silica film. Detach. Thereby, fine pores of less than 10 nm are formed in the silica film. The volume of the pores can be about 0.1 to 50%.
[0015]
In this method, the porosity in the film can be changed by changing the gas flow rate of a compound containing a phenyl group such as tetraisocyanate, silane, trimethylamine and phenyl isocyanate during film formation. Thereby, since the value of a refractive index can be controlled in a wide range, an antireflection film over a wide wavelength range can be realized.
[0016]
In the CVD method, a uniform film can be easily formed on the substrate by controlling the flow of the source gas, so that it can be easily formed even on the mask or the substrate. In addition, since the film is formed by gas without using liquid as a raw material, there is no shrinkage of the film which becomes a problem at the time of heat treatment, and since the raw material is a gas, fine unevenness existing on the surface such as USLI can be embedded well. Even if the film is used as it is, no OH remains in the film, so that it is excellent in stability even when used in USLI. In addition, since it is basically a silicon-based film, it is harder and more resistant to wear and chemicals than MgF 2 . Like a film formed by acid-treating silicate glass, sodium or potassium which is a problem as a contaminant in the silicon USLI process is not included in the film.
[0017]
The second method is a method called a liquid silica film, that is, spin-on-glass (SOG). When the film is formed by spin coating, the amount of pores in the film can be controlled by controlling the amount of iodine and the amount of thinner contained in the SOG. The ratio of the volume of iodine and SOG added to the volume of the thinner is constant at 40%: 60%, and the weight ratio of iodine to SOG (for example, OCD-T10 manufactured by Tokyo Ohkagaku) is from 15% to 25%. By changing the refractive index, the refractive index can be changed from 1.32 to 1.1.
[0018]
In this case, an antireflection film covering a wide range can be realized as in the first method by changing the ratio of iodine and SOG and stacking films having different refractive indexes. Even in this method, a uniform thin film can be easily formed by controlling the viscosity of SOG and the rotational speed during spin coating.
[0019]
By using this method, a silica film containing an alkyl group component or a phenyl group component is deposited, and these alkyl group components or phenyl group components are desorbed from the film by subsequent heat treatment to generate fine pores. Thereby, the refractive index of the film can be changed.
[0020]
FIG. 1 is a schematic sectional view showing in principle the structure of the antireflection film of the present invention. FIG. 1 (a)
A uniform pore antireflection film 2 having
[0021]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 2 is an explanatory view of a method for producing the antireflection film of the present invention. In FIG. 2, a tertiary amine is supplied to a reaction chamber (reaction vessel) 1 from a supply pipe (A) 2 , and a raw material consisting of a silicon raw material not containing hydrogen and a compound containing an alkyl group or a phenyl group is supplied to the supply pipe ( B) A reaction product 7 is supplied from 3 and reacted to generate a reaction product 7 on the surfaces of the reaction chamber 1 and the substrate 5, and a silica film 6 containing an alkyl group component or a phenyl group component is deposited on the substrate 5. The remaining reaction source gas is exhausted from the exhaust pipe 4.
[0022]
Examples of the third type amine include trialkylamines such as trimethylamine, dimethylmonoethylamine, monomethyldiethylamine, and triethylamine, or trialkylamines such as trifluoromethylamine and trifluoroethylamine in which hydrogen is substituted with halogen. be able to.
[0023]
From the supply pipe B3, a raw material composed of a compound having a cyanate group and an alkyl group, a phenyl group, an alkyl group, or a silicon-based raw material composed of a compound containing a phenyl group and a cyanate group at the same time, or an alkyl group, a phenyl group and a cyanate group A silicon raw material comprising a raw material comprising a compound and a compound having a cyanate group is supplied. For example, tetraisocyanate and bisdimethylaminodiphenylsilane, phenyl triisocyanate, and phenylene diisocyanate are supplied.
[0024]
In the structure shown in FIG. 2, a silicon-based material that is a mixture of a raw material composed of a compound having an alkyl group or a phenyl group and a cyanate group at the same time, or a raw material composed of a compound containing an alkyl group or a phenyl group and a compound containing a cyanate group The raw material is used to introduce the vapor directly into the reaction chamber by a gas or by using a carrier gas. The third type amine supplied from the supply pipe (A) 2 and the silicon raw material supplied from the supply pipe (B) 3 react in the reaction chamber 1 to form a reaction product 7 at a low temperature.
[0025]
After forming the film using the CVD method as described above, the alkyl group component or the phenyl group component is removed by heat-treating the silica film containing the alkyl group component or the phenyl group component in a vacuum heating furnace at 300 ° C. or higher in vacuum. Desorbed from the silica film. Thereby, fine pores of less than 10 nm are formed in the silica film.
[0026]
FIG. 3 shows a method of forming pores in a film in a single layer and multilayer structure when SOG is spin coated. In a multilayer structure, the porosity can be controlled in the depth direction by recoating.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing in principle the structure of an antireflection film of the present invention.
FIG. 2 is an explanatory view of a method for producing an antireflection film of the present invention by a CVD method.
FIG. 3 is an explanatory view of a method for producing an antireflection film of the present invention by a spin coating method.
Claims (2)
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| JP2000088609A JP3784234B2 (en) | 2000-03-24 | 2000-03-24 | Antireflection film comprising silica film and method for producing the same |
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| JP2000088609A JP3784234B2 (en) | 2000-03-24 | 2000-03-24 | Antireflection film comprising silica film and method for producing the same |
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| JP4471123B2 (en) * | 2003-04-17 | 2010-06-02 | 日産化学工業株式会社 | Porous underlayer film and composition for forming underlayer film for forming porous underlayer film |
| JP2005018027A (en) * | 2003-06-04 | 2005-01-20 | Ricoh Co Ltd | Liquid crystal device having porous material layer, method for manufacturing porous material film, and method for manufacturing liquid crystal device having porous material layer |
| JP2006036598A (en) * | 2004-07-28 | 2006-02-09 | Ube Nitto Kasei Co Ltd | Method for producing porous silica-based thin film, porous silica-based thin film, and structure |
| DE102005007825B4 (en) | 2005-01-10 | 2015-09-17 | Interpane Entwicklungs-Und Beratungsgesellschaft Mbh | Method for producing a reflection-reducing coating, reflection-reducing layer on a transparent substrate and use of such a layer |
| TW200746123A (en) | 2006-01-11 | 2007-12-16 | Pentax Corp | Optical element having anti-reflection coating |
| US8419955B2 (en) | 2009-01-07 | 2013-04-16 | Panasonic Corporation | Antireflection structure, lens barrel including antireflection structure, method for manufacturing antireflection structure |
| JP2011048081A (en) * | 2009-08-26 | 2011-03-10 | Sony Corp | Optical element, reflection reducing working device, and reflection reducing working method |
| US9279918B2 (en) * | 2009-10-24 | 2016-03-08 | 3M Innovative Properties Company | Gradient low index article and method |
| FR2979108B1 (en) * | 2011-08-18 | 2013-08-16 | Saint Gobain | ANTIREFLECTION GLAZING WITH POROUS COATING |
| CN110867393A (en) * | 2019-11-21 | 2020-03-06 | 晶澳（扬州）太阳能科技有限公司 | Characterization method for compactness of deposited film and manufacturing method of battery piece |
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