JP3674520B2 - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device Download PDF

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JP3674520B2
JP3674520B2 JP2001062893A JP2001062893A JP3674520B2 JP 3674520 B2 JP3674520 B2 JP 3674520B2 JP 2001062893 A JP2001062893 A JP 2001062893A JP 2001062893 A JP2001062893 A JP 2001062893A JP 3674520 B2 JP3674520 B2 JP 3674520B2
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power supply
semiconductor integrated
mosfet
internal power
integrated circuit
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JP2002271145A (en
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弘和 河越
寛之 北嶋
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関西日本電気株式会社
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

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  • Amplifiers (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体集積回路装置に関し、特に外部電源から内部電源電圧を生成する内部電源回路と、スイッチング制御して内部電源電圧を容量性負荷に出力するスイッチング回路とを有する半導体集積回路装置に関する。
【０００２】
【従来の技術】
従来のこの種の半導体集積回路装置の一例を図８を参照して説明する。図において、１００は、半導体集積回路装置で、電源端子１に外部電源ＶＣＣが接続され、接地端子２が接地され、入力端子３に入力信号Ｖinが供給され、出力端子４に容量性負荷ＣＬが接続される。半導体集積回路装置１００は、外部電源電圧ＶＣＣから所望の内部電源電圧ＶＨＬを生成する内部電源回路１０と、入力信号Ｖinによりスイッチング制御して内部電源電圧ＶＨＬを出力端子４に出力するスイッチング回路２０とを具備している。
【０００３】
内部電源回路１０は、直列接続された抵抗１１と抵抗１２との接続点で外部電源電圧ＶＣＣが所望の電圧レベルに分割され、演算増幅器１３を介して内部電源電圧ＶＨＬとしてスイッチング回路２０に出力される構成としている。
演算増幅器１３は、具体的な構成例を図９に示すように、直列接続されたＰチャネル型ＭＯＳＦＥＴ１４とＮチャネル型ＭＯＳＦＥＴ１５とを出力段に有し、ＭＯＳＦＥＴ１４のソースが電源端子１に接続され、ＭＯＳＦＥＴ１５のソースが接地端子２に接続され、ＭＯＳＦＥＴ１４とＭＯＳＦＥＴ１５との接続点から内部電源電圧ＶＨＬが出力される構成としている。
【０００４】
スイッチング回路２０は、Ｐチャネル型ＭＯＳＦＥＴ２１とＮチャネル型ＭＯＳＦＥＴ２２とからなるＣＭＯＳ構成を有し、ＭＯＳＦＥＴ２１のソースに内部電源電圧ＶＨＬが供給され、ＭＯＳＦＥＴ２２のソースに接地端子２が接続され、入力端子３からの入力信号Ｖinがインバータ２３を介してＭＯＳＦＥＴ２１およびＭＯＳＦＥＴ２２のゲートに供給されることにより、ＭＯＳＦＥＴ２１およびＭＯＳＦＥＴ２２がオン／オフ制御されて、ＭＯＳＦＥＴ２１とＭＯＳＦＥＴ２２との接続点から出力端子４に内部電源電圧ＶＨＬが出力電圧Ｖoutとして出力される構成としている。
【０００５】
上記構成の半導体集積回路装置１００の動作は、電源端子１に外部電源電圧ＶＣＣが供給されると、抵抗１１と抵抗１２との接続点で外部電源電圧ＶＣＣが所望の電圧レベルに分割され、演算増幅器１３を介して内部電源回路１０から内部電源電圧ＶＨＬとして出力される。内部電源回路１０から内部電源電圧ＶＨＬが出力されている状態で、図１０に示すように、入力信号Ｖinが“Ｌ＝０”レベルから“Ｈ＝ＶＣＣ”レベルになり、スイッチング回路２０のＭＯＳＦＥＴ２１がオンすると、内部電源回路１０からＭＯＳＦＥＴ２１を介して出力端子４に接続されている容量性負荷ＣＬに電流が流れ、出力電圧Ｖoutは、内部電源電圧ＶＨＬまで立ち上がる。
【０００６】
【発明が解決しようとする課題】
ところで、上記の半導体集積回路装置において、出力電圧Ｖoutが、内部電源電圧ＶＨＬまで立ち上がるとき、ＭＯＳＦＥＴ２１のゲートの電位は“Ｌ”レベルであり、ＭＯＳＦＥＴ２１はフルにオンしている。これに対して、内部電源回路１０の演算増幅器１３は、外部電源電圧ＶＣＣが抵抗１１と抵抗１２との接続点で分割されて非反転入力端に供給されている状態で、ＭＯＳＦＥＴ１４のゲートの電位は“Ｌ＝０”レベルにはならないため、ＭＯＳＦＥＴ１４はオンしているもののフルにはオンしていない。このとき、例えば、ＭＯＳＦＥＴ１４のサイズがＭＯＳＦＥＴ２１と同じサイズに設計されているとすると、ＭＯＳＦＥＴ２１はフルにオンしているのに対して、ＭＯＳＦＥＴ１４はフルにはオンしていないため、ＭＯＳＦＥＴ２１の電流能力に対してＭＯＳＦＥＴ１４の電流能力は十分ではなく、演算増幅器１３は、電流変化に対する動作速度が遅く、スイッチング時の高速な電流変化に追随できず、図１０に示すように、内部電源電圧ＶＨＬが一旦低下した後、所望の電圧になるまでの立ち上がり波形の傾きが緩やかなため、出力電圧Ｖoutの立ち上がり波形の傾きも緩やかになるという問題がある。演算増幅器１３の電流変化に対する動作速度を速くするために演算増幅器１３に含まれる出力トランジスタ１４のサイズを大きくすればよいが、半導体集積回路装置のチップサイズが大きくなるという問題がある。
本発明は上記問題点に鑑み、スイッチング回路がスイッチングオンしたとき瞬時に内部電源回路の電流能力を上げることによりスイッチング速度を速くした半導体集積回路装置を提供することを目的とする。
【０００７】
【課題を解決するための手段】
本発明の半導体集積回路装置は、入力信号に応答して容量性負荷への電圧供給をオン／オフ制御するスイッチング回路と、前記スイッチング回路の電源入力端に所望の電源電圧を供給するように制御される出力トランジスタを有する内部電源回路とを具備した半導体集積回路装置において、前記内部電源回路は、さらに、前記スイッチング回路がオン制御され前記出力トランジスタから前記容量性負荷に電流が流れるときに前記入力信号の前エッジを検出してワンショットパルスを生成するショット回路を有し、前記ワンショットパルスの期間に前記出力トランジスタの制御端子の電位を前記出力トランジスタの電流供給能力を増加させる方向にシフトさせることを特徴とする。
【０００８】
【発明の実施の形態】
以下、この発明の第１実施例について図１を参照して説明する。尚、図８と同一のものについては同一符号を付してその説明を省略する。図において、２００は、半導体集積回路装置で、電源端子１に外部電源ＶＣＣが接続され、接地端子２が接地され、入力端子３に入力信号Ｖinが供給され、出力端子４に容量性負荷ＣＬが接続される。半導体集積回路装置２００は、外部電源電圧ＶＣＣから所望の内部電源電圧ＶＨＬを生成する内部電源回路３０と、入力信号Ｖinによりスイッチング制御して内部電源電圧ＶＨＬを出力端子４に出力する、図８に示したのと同一構成のスイッチング回路２０とを具備している。
【０００９】
内部電源回路３０は、図８に示した内部電源回路１０と同様に、直列接続された抵抗１１と抵抗１２との接続点で外部電源電圧ＶＣＣが所望の電圧レベルに分割され、演算増幅器１３を介して内部電源電圧ＶＨＬとしてスイッチング回路２０に出力される構成としているが、この他に本発明のポイントとなる以下の構成を有している。オンすることにより内部電源回路３０の電流能力を上げるためのＮチャネル型ＭＯＳＦＥＴ３１と、入力信号Ｖinの“Ｈ”レベルへの立ち上がりエッジで出力するワンショットパルスによりＭＯＳＦＥＴ３１をオンさせるショット回路３２とを有している。
【００１０】
ＭＯＳＦＥＴ３１のドレインは、図２に示すように、演算増幅器１３の出力段のハイサイド側を構成するＰチャネル型ＭＯＳＦＥＴ１４のゲートに接続されている。ＭＯＳＦＥＴ３１のソースは、接地端子２に接続されている。ショット回路３２は、図２に示すように、遅延回路３３、インバータ３４、２入力ＮＡＮＤ回路３５、およびインバータ３６から構成されている。入力信号Ｖinは２入力ＮＡＮＤ回路３５の２入力の一方の入力端と遅延回路３３の入力端に供給される。遅延回路３３の出力はインバータ３４を介して２入力ＮＡＮＤ回路３５の２入力の他方の入力端に供給される。２入力ＮＡＮＤ回路３５の出力はインバータ３６を介して、ショット回路３２の出力として、ＭＯＳＦＥＴ３１のゲートに供給される。
【００１１】
上記構成の半導体集積回路装置２００の動作は、電源端子１に外部電源電圧ＶＣＣが供給されると、抵抗１１と抵抗１２との接続点で外部電源電圧ＶＣＣが所望の電圧レベルに分割され、演算増幅器１３を介して内部電源回路３０から内部電源電圧ＶＨＬとして出力される。内部電源回路３０から内部電源電圧ＶＨＬが出力されている状態で、図３に示すように、入力信号Ｖinが“Ｌ”レベルから“Ｈ”レベルになると、スイッチング回路２０のＭＯＳＦＥＴ２１がオンする。このとき入力信号Ｖinの“Ｈ”レベルへの立ち上がりエッジで内部電源回路３０のショット回路３２からワンショットパルスがＭＯＳＦＥＴ３１のゲートに供給され、ＭＯＳＦＥＴ３１がオンする。ＭＯＳＦＥＴ３１がオンすると、内部電源回路３０の演算増幅器１３に含まれるＭＯＳＦＥＴ１４のゲートの電位が“Ｌ”レベルになり、ＭＯＳＦＥＴ１４がフルにオンして外部電源ＶＣＣからＭＯＳＦＥＴ１４およびＭＯＳＦＥＴ２１を介して容量性負荷に急速に電流が流れ、内部電源回路３０からの内部電源電圧ＶＨＬおよびスイッチング回路２０からの出力電圧Ｖoutは、急な傾きの立ち上がり波形で立ち上がる。
【００１２】
以上説明したように、入力信号Ｖinの立ち上がりエッジで立ち上がるショット回路３２からのワンショットパルスにより、ＭＯＳＦＥＴ３１をオンさせ、演算増幅器１３に含まれるＭＯＳＦＥＴ１４をフルにオンさせるので、ワンショットパルスの期間だけ演算増幅器１３の電流能力が上がり、出力端子４からの出力電圧Ｖoutの立ち上がり波形の傾きが急峻となる。
【００１３】
次に、この発明の第２実施例について図４を参照して説明する。
図において、３００は、半導体集積回路装置で、電源端子５に外部電源−ＶＣＣが接続され、接地端子６が接地され、入力端子７に入力信号−Ｖinが供給され、出力端子８に容量性負荷ＣＬが接続される。半導体集積回路装置３００は、外部電源電圧−ＶＣＣから所望の内部電源電圧−ＶＨＬを生成する内部電源回路４０と、入力信号Ｖinによりスイッチング制御して内部電源電圧−ＶＨＬを出力端子８に出力するスイッチング回路６０とを具備している。
【００１４】
内部電源回路４０は、図１に示した内部電源回路３０と同様に、抵抗４１、抵抗４２、演算増幅器４３、Ｐチャネル型ＭＯＳＦＥＴ５１およびショット回路５２を有している。
演算増幅器４３は、具体的な構成例を図５に示すように、直列接続されたＮチャネル型ＭＯＳＦＥＴ４４とＰチャネル型ＭＯＳＦＥＴ４５とを出力段に有し、ＭＯＳＦＥＴ４４のソースが電源端子５に接続され、ＭＯＳＦＥＴ４５のソースが接地端子６に接続され、ＭＯＳＦＥＴ４４とＭＯＳＦＥＴ４５との接続点から内部電源電圧−ＶＨＬが出力される構成としている。
【００１５】
ＭＯＳＦＥＴ５１のドレインは、図６に示すように、演算増幅器４３の出力段のロウサイド側を構成するＮチャネル型ＭＯＳＦＥＴ４４のゲートに接続されている。ＭＯＳＦＥＴ５１のソースは接地端子６に接続されている。ショット回路５２は、図６に示すように、遅延回路５３、インバータ５４、２入力ＮＯＲ回路５５、およびインバータ５６から構成されている。入力信号−Ｖinは２入力ＮＯＲ回路５５の２入力の一方の入力端と遅延回路５３の入力端に供給される。遅延回路５３の出力はインバータ５４を介して２入力ＮＯＲ回路５５の２入力の他方の入力端に供給される。２入力ＮＯＲ回路５５の出力はインバータ５６を介して、ショット回路５２の出力として、ＭＯＳＦＥＴ５１のゲートに供給される。
【００１６】
スイッチング回路６０は、図８に示した内部電源回路２０と同様に、Ｎチャネル型ＭＯＳＦＥＴ６１とＰチャネル型ＭＯＳＦＥＴ６２とからなるＣＭＯＳ構成を有し、ＭＯＳＦＥＴ６１のソースに内部電源電圧−ＶＨＬが供給され、ＭＯＳＦＥＴ６２のソースに接地端子６が接続され、入力端子７からの入力信号−Ｖinがインバータ６３を介してＭＯＳＦＥＴ６１およびＭＯＳＦＥＴ６２のゲートに供給されることにより、ＭＯＳＦＥＴ６１およびＭＯＳＦＥＴ６２がオン／オフ制御されて、ＭＯＳＦＥＴ６１とＭＯＳＦＥＴ６２との接続点から出力端子８に内部電源電圧−ＶＨＬが出力電圧−Ｖoutとして出力される構成としている。
【００１７】
上記構成の半導体集積回路装置３００の動作は、電源端子５に外部電源電圧−ＶＣＣが供給されると、抵抗４１と抵抗４２との接続点で外部電源電圧−ＶＣＣが所望の電圧レベルに分割され、演算増幅器４３を介して内部電源回路４０から内部電源電圧−ＶＨＬとして出力される。内部電源回路４０から内部電源電圧−ＶＨＬが出力されている状態で、図７に示すように、入力信号−Ｖinが“Ｈ＝０”レベルから“Ｌ＝−ＶＣＣ”レベルになると、スイッチング回路６０のＭＯＳＦＥＴ６１がオンする。このとき入力信号−Ｖinの“Ｌ”レベルへの立ち下がりエッジで内部電源回路４０のショット回路５２からワンショットパルスがＭＯＳＦＥＴ５１のゲートに供給され、ＭＯＳＦＥＴ５１がオンする。ＭＯＳＦＥＴ５１がオンすると、内部電源回路４０の演算増幅器４３に含まれるＭＯＳＦＥＴ４４のゲートの電位が“Ｈ”レベルになり、ＭＯＳＦＥＴ４４がフルにオンして外部電源−ＶＣＣからＭＯＳＦＥＴ４４およびＭＯＳＦＥＴ６１を介して容量性負荷に急速に電流が流れ、内部電源回路４０からの内部電源電圧−ＶＨＬおよびスイッチング回路６０からの出力電圧−Ｖoutは、急な傾きの立ち下がり波形で立ち下がる。
【００１８】
以上説明したように、入力信号−Ｖ inの立ち下がりエッジで立ち下がるショット回路５２からのワンショットパルスにより、ＭＯＳＦＥＴ５１をオンさせ、演算増幅器４３に含まれるＭＯＳＦＥＴ４４をフルにオンさせるので、ワンショットパルスの期間だけ演算増幅器４３の電流能力が上がり、出力端子８からの出力電圧−Ｖoutの立ち下がり波形の傾きが急峻となる。
【００１９】
【発明の効果】
以上に説明したように、本発明の半導体集積回路装置によれば、内部電源回路の回路規模をあまり大きくすることなく、例えば、演算増幅器に含まれる出力トランジスタのサイズを大きくすることなく、半導体集積回路装置のスイッチング速度を速くすることができる。
【図面の簡単な説明】
【図１】本発明の第１実施例の半導体集積回路装置のブロック図。
【図２】 図１に示す半導体集積回路装置の内部電源回路の要部回路図。
【図３】図１に示す半導体集積回路装置の動作を説明するための波形図。
【図４】本発明の第２実施例の半導体集積回路装置のブロック図。
【図５】図４に示す半導体集積回路装置の内部電源回路に使用される一例の演算増幅器の回路図。
【図６】図４に示す半導体集積回路装置の内部電源回路の要部回路図。
【図７】図４に示す半導体集積回路装置の動作を説明するための波形図。
【図８】従来の半導体集積回路装置のブロック図。
【図９】図１および図８に示す半導体集積回路装置の内部電顕回路に使用される一例の演算増幅器の回路図。
【図１０】 図８の半導体集積回路装置の動作を説明するための波形図。
【符号の説明】
１３、４３ 演算増幅器
１４ Ｐチャンネル型ＭＯＳＦＥＴ
４４ Ｎチャンネル型ＭＯＳＦＥＴ
２０、６０ スイッチング回路
３０、４０ 内部電源回路
３１ Ｎチャンネル型ＭＯＳＦＥＴ
５１ Ｐチャンネル型ＭＯＳＦＥＴ
３２、５２ ショット回路[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device having an internal power supply circuit that generates an internal power supply voltage from an external power supply and a switching circuit that performs switching control and outputs the internal power supply voltage to a capacitive load.
[0002]
[Prior art]
An example of this type of conventional semiconductor integrated circuit device will be described with reference to FIG. In the figure, 100 is a semiconductor integrated circuit device, an external power supply VCC is connected to a power supply terminal 1, a ground terminal 2 is grounded, an input signal Vin is supplied to an input terminal 3, and a capacitive load CL is connected to an output terminal 4. Connected. The semiconductor integrated circuit device 100 includes an internal power supply circuit 10 that generates a desired internal power supply voltage VHL from the external power supply voltage VCC, and a switching circuit 20 that performs switching control according to an input signal Vin and outputs the internal power supply voltage VHL to the output terminal 4. It has.
[0003]
In the internal power supply circuit 10, the external power supply voltage VCC is divided into a desired voltage level at the connection point between the resistor 11 and the resistor 12 connected in series, and is output to the switching circuit 20 as the internal power supply voltage VHL via the operational amplifier 13. The configuration is as follows.
As shown in FIG. 9, the operational amplifier 13 has a P-channel MOSFET 14 and an N-channel MOSFET 15 connected in series at the output stage, and the source of the MOSFET 14 is connected to the power supply terminal 1. The source of the MOSFET 15 is connected to the ground terminal 2, and the internal power supply voltage VHL is output from the connection point between the MOSFET 14 and the MOSFET 15.
[0004]
The switching circuit 20 has a CMOS configuration including a P-channel type MOSFET 21 and an N-channel type MOSFET 22, the internal power supply voltage VHL is supplied to the source of the MOSFET 21, the ground terminal 2 is connected to the source of the MOSFET 22, and the input terminal 3 Is supplied to the gates of the MOSFET 21 and the MOSFET 22 via the inverter 23, whereby the MOSFET 21 and the MOSFET 22 are controlled to be turned on / off, and the internal power supply voltage VHL is applied to the output terminal 4 from the connection point between the MOSFET 21 and the MOSFET 22. The output voltage Vout is output.
[0005]
In the operation of the semiconductor integrated circuit device 100 having the above configuration, when the external power supply voltage VCC is supplied to the power supply terminal 1, the external power supply voltage VCC is divided into a desired voltage level at the connection point between the resistor 11 and the resistor 12. An internal power supply voltage VHL is output from the internal power supply circuit 10 through the amplifier 13. In a state where the internal power supply voltage VHL is output from the internal power supply circuit 10, the input signal Vin changes from “L = 0” level to “H = VCC” level as shown in FIG. When turned on, current flows from the internal power supply circuit 10 to the capacitive load CL connected to the output terminal 4 via the MOSFET 21, and the output voltage Vout rises to the internal power supply voltage VHL.
[0006]
[Problems to be solved by the invention]
In the semiconductor integrated circuit device, when the output voltage Vout rises to the internal power supply voltage VHL, the gate potential of the MOSFET 21 is at the “L” level, and the MOSFET 21 is fully turned on. On the other hand, the operational amplifier 13 of the internal power supply circuit 10 has the gate potential of the MOSFET 14 in a state where the external power supply voltage VCC is divided at the connection point between the resistor 11 and the resistor 12 and supplied to the non-inverting input terminal. Since “L = 0” level is not reached, MOSFET 14 is on but not fully on. At this time, for example, if the size of the MOSFET 14 is designed to be the same size as the MOSFET 21, the MOSFET 21 is fully turned on, whereas the MOSFET 14 is not fully turned on. On the other hand, the current capability of the MOSFET 14 is not sufficient, and the operational amplifier 13 has a low operating speed with respect to the current change and cannot follow the high-speed current change at the time of switching. As shown in FIG. 10, the internal power supply voltage VHL temporarily decreases. After that, the slope of the rising waveform until reaching the desired voltage is gentle, so that the slope of the rising waveform of the output voltage Vout also becomes gentle. Although the size of the output transistor 14 included in the operational amplifier 13 may be increased in order to increase the operation speed with respect to the current change of the operational amplifier 13, there is a problem that the chip size of the semiconductor integrated circuit device increases.
In view of the above problems, an object of the present invention is to provide a semiconductor integrated circuit device in which the switching speed is increased by instantaneously increasing the current capability of an internal power supply circuit when the switching circuit is switched on.
[0007]
[Means for Solving the Problems]
A semiconductor integrated circuit device according to the present invention controls a switching circuit that performs on / off control of voltage supply to a capacitive load in response to an input signal, and supplies a desired power supply voltage to a power supply input terminal of the switching circuit. In the semiconductor integrated circuit device comprising the internal power supply circuit having the output transistor, the internal power supply circuit further includes the input when the switching circuit is on-controlled and a current flows from the output transistor to the capacitive load. A shot circuit that detects a leading edge of a signal and generates a one-shot pulse, and shifts the potential of the control terminal of the output transistor in a direction to increase the current supply capability of the output transistor during the one-shot pulse; It is characterized by that.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
A first embodiment of the present invention will be described below with reference to FIG. 8 that are the same as those in FIG. In the figure, reference numeral 200 denotes a semiconductor integrated circuit device, in which an external power supply VCC is connected to a power supply terminal 1, a ground terminal 2 is grounded, an input signal Vin is supplied to an input terminal 3, and a capacitive load CL is applied to an output terminal 4. Connected. The semiconductor integrated circuit device 200 generates an internal power supply circuit 30 that generates a desired internal power supply voltage VHL from the external power supply voltage VCC, and outputs the internal power supply voltage VHL to the output terminal 4 by switching control according to the input signal Vin. A switching circuit 20 having the same configuration as shown is provided.
[0009]
As in the internal power supply circuit 10 shown in FIG. 8, the internal power supply circuit 30 divides the external power supply voltage VCC into a desired voltage level at the connection point between the resistor 11 and the resistor 12 connected in series. The internal power supply voltage VHL is output to the switching circuit 20 through the above configuration. In addition to this, the following configuration which is a point of the present invention is provided. It has an N-channel MOSFET 31 for increasing the current capability of the internal power supply circuit 30 by turning on, and a shot circuit 32 for turning on the MOSFET 31 by a one-shot pulse output at the rising edge of the input signal Vin to the “H” level. doing.
[0010]
As shown in FIG. 2, the drain of the MOSFET 31 is connected to the gate of a P-channel MOSFET 14 constituting the high side of the output stage of the operational amplifier 13. The source of the MOSFET 31 is connected to the ground terminal 2. As shown in FIG. 2, the shot circuit 32 includes a delay circuit 33, an inverter 34, a two-input NAND circuit 35, and an inverter 36. The input signal Vin is supplied to one input terminal of the two inputs of the two-input NAND circuit 35 and the input terminal of the delay circuit 33. The output of the delay circuit 33 is supplied to the other input terminal of the two inputs of the two-input NAND circuit 35 via the inverter 34. The output of the 2-input NAND circuit 35 is supplied to the gate of the MOSFET 31 as the output of the shot circuit 32 via the inverter 36.
[0011]
In the operation of the semiconductor integrated circuit device 200 having the above configuration, when the external power supply voltage VCC is supplied to the power supply terminal 1, the external power supply voltage VCC is divided into a desired voltage level at the connection point between the resistor 11 and the resistor 12. The internal power supply circuit 30 outputs the internal power supply voltage VHL through the amplifier 13. In a state where the internal power supply voltage VHL is being output from the internal power supply circuit 30, as shown in FIG. 3, when the input signal Vin changes from “L” level to “H” level, the MOSFET 21 of the switching circuit 20 is turned on. At this time, a one-shot pulse is supplied from the shot circuit 32 of the internal power supply circuit 30 to the gate of the MOSFET 31 at the rising edge of the input signal Vin to the “H” level, and the MOSFET 31 is turned on. When the MOSFET 31 is turned on, the potential of the gate of the MOSFET 14 included in the operational amplifier 13 of the internal power supply circuit 30 becomes “L” level, the MOSFET 14 is fully turned on, and is supplied from the external power supply VCC to the capacitive load via the MOSFET 14 and the MOSFET 21. Current flows rapidly, and the internal power supply voltage VHL from the internal power supply circuit 30 and the output voltage Vout from the switching circuit 20 rise with a rising waveform having a steep slope.
[0012]
As described above, the MOSFET 31 is turned on by the one-shot pulse from the shot circuit 32 rising at the rising edge of the input signal Vin, and the MOSFET 14 included in the operational amplifier 13 is fully turned on. The current capability of the amplifier 13 increases, and the slope of the rising waveform of the output voltage Vout from the output terminal 4 becomes steep.
[0013]
Next, a second embodiment of the present invention will be described with reference to FIG.
In the figure, reference numeral 300 denotes a semiconductor integrated circuit device, in which an external power supply -VCC is connected to a power supply terminal 5, a ground terminal 6 is grounded, an input signal -Vin is supplied to an input terminal 7, and a capacitive load is applied to an output terminal 8. CL is connected. The semiconductor integrated circuit device 300 includes an internal power supply circuit 40 that generates a desired internal power supply voltage -VHL from the external power supply voltage -VCC, and switching that outputs the internal power supply voltage -VHL to the output terminal 8 by performing switching control according to the input signal Vin. Circuit 60.
[0014]
Similar to the internal power supply circuit 30 shown in FIG. 1, the internal power supply circuit 40 includes a resistor 41, a resistor 42, an operational amplifier 43, a P-channel MOSFET 51, and a shot circuit 52.
As shown in FIG. 5, the operational amplifier 43 has an N-channel MOSFET 44 and a P-channel MOSFET 45 connected in series at the output stage, and the source of the MOSFET 44 is connected to the power supply terminal 5. The source of the MOSFET 45 is connected to the ground terminal 6, and the internal power supply voltage −VHL is output from the connection point between the MOSFET 44 and the MOSFET 45.
[0015]
As shown in FIG. 6, the drain of the MOSFET 51 is connected to the gate of an N-channel MOSFET 44 that forms the low side of the output stage of the operational amplifier 43. The source of the MOSFET 51 is connected to the ground terminal 6. As shown in FIG. 6, the shot circuit 52 includes a delay circuit 53, an inverter 54, a two-input NOR circuit 55, and an inverter 56. The input signal −Vin is supplied to one input terminal of the two inputs of the two-input NOR circuit 55 and the input terminal of the delay circuit 53. The output of the delay circuit 53 is supplied to the other input terminal of the two inputs of the two-input NOR circuit 55 via the inverter 54. The output of the 2-input NOR circuit 55 is supplied to the gate of the MOSFET 51 as the output of the shot circuit 52 via the inverter 56.
[0016]
As with the internal power supply circuit 20 shown in FIG. 8, the switching circuit 60 has a CMOS configuration including an N-channel MOSFET 61 and a P-channel MOSFET 62, and the internal power supply voltage −VHL is supplied to the source of the MOSFET 61. Is connected to the ground terminal 6, and the input signal −Vin from the input terminal 7 is supplied to the gates of the MOSFET 61 and the MOSFET 62 via the inverter 63, so that the MOSFET 61 and the MOSFET 62 are on / off controlled. The internal power supply voltage −VHL is output as the output voltage −Vout from the connection point with the MOSFET 62 to the output terminal 8.
[0017]
In the operation of the semiconductor integrated circuit device 300 having the above configuration, when the external power supply voltage −VCC is supplied to the power supply terminal 5, the external power supply voltage −VCC is divided to a desired voltage level at the connection point between the resistor 41 and the resistor 42. The internal power supply circuit 40 outputs the internal power supply voltage −VHL through the operational amplifier 43. When the internal power supply voltage -VHL is being output from the internal power supply circuit 40 and the input signal -Vin is changed from "H = 0" level to "L = -VCC" level as shown in FIG. MOSFET 61 is turned on. At this time, a one-shot pulse is supplied from the shot circuit 52 of the internal power supply circuit 40 to the gate of the MOSFET 51 at the falling edge of the input signal −Vin to the “L” level, and the MOSFET 51 is turned on. When the MOSFET 51 is turned on, the potential of the gate of the MOSFET 44 included in the operational amplifier 43 of the internal power supply circuit 40 becomes “H” level, the MOSFET 44 is fully turned on, and the capacitive load is supplied from the external power supply −VCC via the MOSFET 44 and the MOSFET 61. A current flows rapidly, and the internal power supply voltage −VHL from the internal power supply circuit 40 and the output voltage −Vout from the switching circuit 60 fall with a steep falling waveform.
[0018]
As described above, the MOSFET 51 is turned on by the one-shot pulse from the shot circuit 52 falling at the falling edge of the input signal −V in and the MOSFET 44 included in the operational amplifier 43 is fully turned on. During this period, the current capability of the operational amplifier 43 increases, and the slope of the falling waveform of the output voltage −Vout from the output terminal 8 becomes steep.
[0019]
【The invention's effect】
As described above, according to the semiconductor integrated circuit device of the present invention, the semiconductor integrated circuit device does not increase the circuit scale of the internal power supply circuit, for example, without increasing the size of the output transistor included in the operational amplifier. The switching speed of the circuit device can be increased.
[Brief description of the drawings]
FIG. 1 is a block diagram of a semiconductor integrated circuit device according to a first embodiment of the present invention.
[2] main portion circuitry diagram of the internal power supply circuit of the semiconductor integrated circuit device shown in FIG.
3 is a waveform diagram for explaining the operation of the semiconductor integrated circuit device shown in FIG. 1; FIG.
FIG. 4 is a block diagram of a semiconductor integrated circuit device according to a second embodiment of the present invention.
5 is a circuit diagram of an example operational amplifier used in the internal power supply circuit of the semiconductor integrated circuit device shown in FIG. 4;
6 is a main part circuit diagram of an internal power supply circuit of the semiconductor integrated circuit device shown in FIG. 4;
7 is a waveform diagram for explaining the operation of the semiconductor integrated circuit device shown in FIG. 4; FIG.
FIG. 8 is a block diagram of a conventional semiconductor integrated circuit device.
9 is a circuit diagram of an example operational amplifier used in the internal electron microscope circuit of the semiconductor integrated circuit device shown in FIGS. 1 and 8. FIG.
10 is a waveform diagram for explaining the operation of the semiconductor integrated circuit device of FIG. 8;
[Explanation of symbols]
13, 43 operational amplifier 14 P-channel MOSFET
44 N-channel MOSFET
20, 60 Switching circuit 30, 40 Internal power supply circuit 31 N-channel MOSFET
51 P-channel MOSFET
32, 52 shot circuit

Claims (6)

入力信号に応答して容量性負荷への電圧供給をオン／オフ制御するスイッチング回路と、前記スイッチング回路の電源入力端に所望の電源電圧を供給するように制御される出力トランジスタを有する内部電源回路とを具備した半導体集積回路装置において、
前記内部電源回路は、さらに、前記スイッチング回路がオン制御され前記出力トランジスタから前記容量性負荷に電流が流れるときに前記入力信号の前エッジを検出してワンショットパルスを生成するショット回路を有し、前記ワンショットパルスの期間に前記出力トランジスタの制御端子の電位を前記出力トランジスタの電流供給能力を増加させる方向にシフトさせることを特徴とする半導体集積回路装置。 An internal power supply circuit having a switching circuit that controls on / off of voltage supply to a capacitive load in response to an input signal, and an output transistor that is controlled to supply a desired power supply voltage to a power supply input terminal of the switching circuit In a semiconductor integrated circuit device comprising:
The internal power supply circuit further includes a shot circuit that detects a leading edge of the input signal and generates a one-shot pulse when the switching circuit is on-controlled and a current flows from the output transistor to the capacitive load. A semiconductor integrated circuit device , wherein the potential of the control terminal of the output transistor is shifted in the direction of increasing the current supply capability of the output transistor during the one-shot pulse period . 前記ワンショットパルスにより前記出力トランジスタの制御端子の電位を前記出力トランジスタがフルにオンする電位にすることを特徴とする請求項１記載の半導体集積回路装置。2. The semiconductor integrated circuit device according to claim 1, wherein the potential of the control terminal of the output transistor is set to a potential at which the output transistor is fully turned on by the one-shot pulse. 前記外部電源電圧および内部電源電圧が所定電位に対して正極性電圧であり、前記出力トランジスタがＰチャネル型ＭＯＳトランジスタであることを特徴とする請求項１記載の半導体集積回路装置。2. The semiconductor integrated circuit device according to claim 1, wherein the external power supply voltage and the internal power supply voltage are positive voltages with respect to a predetermined potential, and the output transistor is a P-channel MOS transistor. 前記外部電源電圧および内部電源電圧が所定電位に対して負極性電圧であり、前記出力トランジスタがＮチャネル型ＭＯＳトランジスタであることを特徴とする請求項１記載の半導体集積回路装置。2. The semiconductor integrated circuit device according to claim 1, wherein the external power supply voltage and the internal power supply voltage are negative voltages with respect to a predetermined potential, and the output transistor is an N-channel MOS transistor. 前記ＭＯＳトランジスタのゲートと前記所定電位間にＮチャネル型ＭＯＳトランジスタを接続し、このゲートに前記ショット回路を接続したことを特徴とする請求項３記載の半導体集積回路装置。4. The semiconductor integrated circuit device according to claim 3, wherein an N-channel MOS transistor is connected between the gate of the MOS transistor and the predetermined potential, and the shot circuit is connected to the gate. 前記ＭＯＳトランジスタのゲートと前記所定電位間にＰチャネル型ＭＯＳトランジスタを接続し、このゲートに前記ショット回路を接続したことを特徴とする請求項４記載の半導体集積回路装置。5. The semiconductor integrated circuit device according to claim 4, wherein a P-channel MOS transistor is connected between the gate of the MOS transistor and the predetermined potential, and the shot circuit is connected to the gate.
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WO2011002455A1 (en) * 2009-06-30 2011-01-06 Skyworks Solutions, Inc. Switching system with linearizing circuit
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