JP3640153B2 - Illumination light source - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an illumination light source using a semiconductor light emitting element.
[0002]
[Prior art]
Conventionally, various light sources composed of semiconductor light emitting elements have been proposed. For example, in Japanese Patent Application Laid-Open No. 5-152609, a light emitting element placed on a stem is represented by a general formula Ga._XAl_1-XA fluorescent dye or a fluorescent pigment which is made of a gallium nitride compound semiconductor represented by N (where 0 ≦ X ≦ 1) and emits fluorescence when excited by light emission of the gallium nitride compound semiconductor in a resin mold. A light-emitting diode that can improve the luminance and improve the luminance of an LED having a light-emitting element made of a gallium nitride-based compound semiconductor material having an emission peak near 430 nm and 370 nm is disclosed. ing.
[0003]
Japanese Patent Application Laid-Open No. 7-99345 discloses a light emitting device in which the light emitting chip is mounted on the bottom of the cup that reflects the light emitted from the light emitting chip to the light emission observation surface side. The first resin is sealed with a resin made of a second resin surrounding the first resin, and the first resin has a fluorescent substance that converts the emission wavelength of the light-emitting chip to another wavelength, or the emission wavelength of the light-emitting chip. It contains a filter material that absorbs part of the light, improves the concentration of the converted light emission to increase the brightness of the LED, and when fluorescent pigments are used, even if LEDs with different wavelengths are placed close together, color mixing will not occur. No light emitting diode is disclosed.
[0004]
Further, Japanese Patent No. 2927279 discloses an LED chip in which a light emitting layer disposed in a cup of a mount lead is a gallium nitride compound semiconductor, and an inner connected electrically using an LED chip and a conductive wire. A coating member in which a transparent resin containing a lead and a phosphor that emits light emitted by light emitted from the LED chip is filled in the cup, a coating member, an LED chip, a conductive wire, and a mount lead and an inner lead The LED chip emits a monochromatic peak wavelength with an emission spectrum of 400 nm to 530 nm, and the phosphor is (RE_1-x  Sm_x)_Three(Al_yGa_1-y)_FiveO₁₂: Ce (where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, RE is at least one selected from Y and Gd), and the light from the LED chip and the light from the phosphor are molds A light-emitting diode capable of emitting white light by passing through a member is described.
[0005]
In the above document, there is a description that a light emitting diode in which the light emission color of an LED chip is color-converted with a phosphor can emit other light emission colors such as a white color using one type of LED chip. Specifically, as a light emitting diode whose wavelength is converted from the light emitted from the LED chip, a white light is emitted by a mixture of light emitted from a blue light emitting diode and light emitted from a phosphor that absorbs the light emitted and emits yellow light. It is stated that it is possible. In other words, white light emission is obtained by a color mixture of yellow light emission from the phosphor and blue light emission from the light emitting diode that is not absorbed by the phosphor.
[0006]
Here, the specific structure of the light emitting diode described in Japanese Patent No. 2927279 will be described. As shown in FIG. 15, the light emitting diode having a bullet-shaped resin portion is mounted on a mount lead 1 as a lead frame. The LED chip 2 is mounted in the cup, and both electrodes of the LED chip 2 are connected to the mount lead 1 and the inner lead 4 by the electric wire 3 by wire bonding, respectively, and the coating portion is mounted in the cup of the mount lead 1 5, and the LED chip 2 side is covered with a bullet-shaped mold member 6.
[0007]
Further, as shown in FIG. 16, in the chip-type light emitting diode, an LED chip 13 is mounted on a housing 12 having an electrode 11, and each electrode of the LED chip 13 is connected to the housing 12 by an electric wire 14 by wire bonding. The mold member 15 is provided in the housing 12 so as to be connected to each electrode 11.
[0008]
In addition, as shown in FIG. 17, the planar light source uses a light guide plate 21 or the like for converting a linear light source into a planar light source, and the LED chip 23 is mounted on a U-shaped metal substrate 22. It has a structure in which a coating portion 24 containing photoluminescence is provided.
[0009]
Furthermore, as shown in FIG. 18, the LED display is composed of a casing 31, a light emitting diode 32, a filler 33, and the like. The unit currently used for illumination is similarly configured by mounting a plurality of LEDs on a printed wiring board.
[0010]
[Problems to be solved by the invention]
However, in the light emitting diode shown in FIGS. 15 and 16, since the LED chip is mounted on the mount lead or the housing, when the light emitting diode is mounted on the substrate, it must be mounted twice, which increases the cost. Challenges arise.
[0011]
Further, when a coating portion containing a photoluminescent phosphor that converts the light emission of the LED chip is provided in the cup of the mount lead, it becomes difficult to control the amount of the phosphor, and color variation tends to occur. For example, when the desired emission color is white and the amount of phosphor varies, the yellow light emitted from the phosphor varies, and the resulting emission color changes to a high-temperature pale color tone, Conversely, it changes to a yellowish hue at low temperature. Such color variation is easily determined as color unevenness, particularly when a plurality of light sources are provided in a planar shape.
[0012]
In addition, in order to arrange | position a fluorescent substance (substance) in a cup, it is necessary to make fluorescent substance contain in resin. However, since the resin containing the phosphor deteriorates when exposed to high-energy blue light and a high temperature in the vicinity of the device at the same time, the lifetime as a light source is shortened.
[0013]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an illumination light source capable of reducing cost and preventing color variation.
[0014]
[Means for Solving the Problems]
  In order to solve the above problem, claim 1 is provided.To any of ~ 3The illumination light source according to the invention has a plate-like base member, a conductor layer is laminated on one surface side of the base member, and a phosphor layer is laminated on one surface side of the conductor layer. A substrate and a plurality of semiconductor light emitting elements mounted on one surface of the mounting substrate are provided.
[0015]
In this configuration, since the number of times of mounting is one, the cost can be reduced. In particular, as the number of semiconductor light emitting elements provided on the mounting substrate increases, the cost reduction effect becomes even greater. Further, if the concentration of the phosphor held in a dispersed manner by the phosphor layer is made constant, it is very easy to quantitatively control the phosphor simply by controlling the thickness of the phosphor layer. As a result, the amount of the phosphor can be made uniform over the entire mounting substrate, and the amount of the phosphor can be adjusted to a predetermined constant value, thereby preventing color variation.
[0018]
  Also,in frontAbove each of the plurality of semiconductor light emitting devicesPositioned and blocks light emitted upward from each of the plurality of semiconductor light emitting elements and out of an optical path of light emitted from the plurality of semiconductor light emitting elements and converted into a predetermined color by the phosphor layer.A structure provided with a light-shielding plate may be provided.1). According to this configuration, since the ratio of the light emitted from each semiconductor light emitting element to the outside without passing through the phosphor layer is reduced, uniform light without color unevenness can be obtained.
[0019]
  Also,in frontAbove each of the plurality of semiconductor light emitting devicesPositioned and reflects light emitted upward from each of the plurality of semiconductor light emitting elements and out of an optical path of light emitted from the plurality of semiconductor light emitting elements and converted into a predetermined color by the phosphor layer.A structure provided with a reflecting plate may be provided.2). According to this configuration, since the ratio of the light emitted from each semiconductor light emitting element to the outside without passing through the phosphor layer is reduced, uniform light without color unevenness can be obtained.
[0020]
  Also,in frontAbove each of the plurality of semiconductor light emitting devicesPositioned and converts light emitted upward from each of the plurality of semiconductor light emitting elements into a predetermined color and emitted from the plurality of semiconductor light emitting elements to be converted into a predetermined color by the phosphor layer. Outside the light pathA configuration including a fluorescent plate may be provided.3). According to this configuration, the light emitted from each semiconductor light-emitting element passes through the fluorescent plate, and the rate of going directly to the outside without passing through the phosphor-containing region is reduced. Can be obtained.
[0021]
  The illumination light source according to any one of claims 1 to 3 may have a structure in which a depression is formed in each mounting region of the plurality of semiconductor light emitting elements on one surface of the mounting substrate. 4). In this structure, for example, if a phosphor layer is also laminated on the side surface of the recess, light emitted from the semiconductor light emitting element is emitted in a direction along one surface of the mounting substrate in addition to the light toward the mounting substrate. Is converted into light of a predetermined color by the phosphor layer on the side surface of the depression, so that the ratio of the light of the predetermined color can be increased. And since the area of the phosphor layer for each semiconductor light-emitting element becomes large, when making the emission color the same color as the illumination light source having a structure that does not form the depression, the concentration of the phosphor to be contained in the phosphor layer is changed to the depression. It can be made lower than that of an illumination light source having a structure not formed. As a result, the time during which the light stays in the phosphor layer due to multiple scattering between the phosphors is shortened, so that it is possible to suitably suppress deterioration of the phosphor and the resin containing the phosphor due to the photochemical reaction.
  Claims 1 to4In the illumination light source according to any one of the above, the base member may be made of metal, and an insulating layer may be laminated between the base member and the conductor layer.5). In this structure, each semiconductor light emitting element dissipates heat through the base member, so that the temperature near each semiconductor light emitting element is lowered, and the phosphor layer is deteriorated due to simultaneous exposure to energetic light and high temperature near the semiconductor light emitting element. Is suppressed. As a result, the lifetime as a light source can be extended.
[0022]
  Furthermore, claims 1 to5In the illumination light source according to any one of the above, the semiconductor light emitting element is a blue LED element, and the phosphor layer contains a phosphor that emits yellow light when excited by light from the LED element. May be configured (claims)6). With this configuration, an illumination light source of white light can be obtained.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the first embodiment of the present invention, and FIGS. 2 to 6 are explanatory diagrams of the manufacturing procedure of the illumination light source shown in FIG. The first embodiment will be described. However, FIG. 1 shows a part of the sectional structure of the illumination light source.
[0024]
The illumination light source of FIG. 1 is formed by arranging a plurality of light sources in, for example, a linear shape or a matrix shape, and a substrate 100 (mounting substrate) and a plurality of (only one is shown in FIG. 1) semiconductors mounted on the substrate 100. The light-emitting element 200 and a convex lens-shaped and translucent resin 300 provided in the region of each semiconductor light-emitting element 200 are configured.
[0025]
The substrate 100 is constituted by a printed wiring board in which, for example, a reflective frame 100e having a plurality of holes H1 formed with a mortar shape having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 3 mm is integrally attached to the upper surface. Yes. The printed wiring board itself has a metal base 100a formed in a plate shape from aluminum, copper, or the like having good thermal conductivity, and an insulating layer 100b is laminated on the upper surface (one surface) of the metal base 100a, A wiring pattern conductor 100c is laminated on a necessary portion of the upper surface of the insulating layer 100b, and a phosphor layer 100d is laminated on a partial region of the wiring pattern conductor 100c, thereby providing a desired circuit. The phosphor layer 100d is made of an epoxy resin that disperses and holds a phosphor that emits yellow light when excited by light from the semiconductor light emitting device 200, and is a peripheral region in which each semiconductor light emitting device 200 is mounted, as shown in FIG. In the example, it is formed over almost the entire bottom surface of the recess formed by each hole H1. Further, the peripheral wall of each hole H1 of the reflection frame 100e has a mirror finish.
[0026]
The semiconductor light emitting device 200 is a blue LED device made of a gallium nitride compound semiconductor, and P and N electrodes respectively connected to the corresponding wiring pattern conductor 100d by the lead wire W by wire bonding (on the drawing). It is formed in a chip shape on the upper surface.
[0027]
Next, a manufacturing procedure of the illumination light source having the above configuration will be described. First, a metal base 100a is prepared, and as shown in FIG. 2, an insulating layer 100b is laminated on the upper surface of the metal base 100a, and a conductor layer that becomes the wiring pattern conductor 100c is laminated on the upper surface of the insulating layer 100b. A phosphor layer 100d is laminated on the upper surface of the lever conductor layer. Here, lamination of the conductor layer on the upper surface side of the metal base 100a through the insulating layer 100b can be performed by bonding. The lamination of the phosphor layer 100d can be performed by applying a translucent resin containing a phosphor on the conductor layer. Alternatively, it is possible to adopt a method in which a translucent resin containing a phosphor is formed in advance in a sheet shape, and this is attached to the upper surface of the conductor layer of the metal base 100a, or a method of vapor deposition by sputtering.
[0028]
Thereafter, as shown in FIG. 3, in order to provide a desired circuit, the phosphor layer 100d above the portion where the conductor layer is to be removed is removed. There are various removal methods. For example, in the case of small-scale production, a method of cutting a part of the phosphor layer 100d with an end mill or the like can be employed. On the other hand, in the case of mass production, a mask is formed with a resist material, and for example, a method of dissolving a part of the phosphor layer 100d using a solvent such as Uresolve (trademark), or sand blasting is used to form the phosphor layer 100d. A method of peeling a part or the like may be employed. Further, if the resin of the phosphor layer 100d is photoreactive such as a photoresist, exposure is performed using a mask so as to leave a desired portion, and then etching is performed by heat treatment. Good. In the first embodiment, a method of masking with a resist material and dissolving a part of the phosphor layer 100d using a solvent is employed, but the illustration of the resist layer is omitted in the drawing.
[0029]
Thereafter, using the phosphor layer 100d left without being removed and the resist layer thereon as a mask, as shown in FIG. 4, a part of the conductor layer to be removed to provide a desired circuit is removed by etching. To do.
[0030]
Thereafter, as shown in FIG. 5, the phosphor layer 100d in the region where the bonding pad is to be formed and the region outside the peripheral region where each semiconductor light emitting element 200 is mounted (see FIG. 1) is formed by the same method as described above. Remove. Subsequently, nickel and gold layers necessary for bonding are formed by a method such as plating. Thereby, the printed wiring board which comprises the board | substrate 100 is obtained.
[0031]
Thereafter, on the phosphor layer 100d of the printed wiring board corresponding to the center of the bottom surface in each recess of the substrate 100 (see FIG. 1), as shown in FIG. Mount). At this time, it goes without saying that other elements are mounted if necessary. Subsequently, each electrode of the semiconductor light emitting element 200 is connected to the bonding pad of the corresponding wiring pattern conductor 100c by the lead wire W by wire bonding.
[0032]
Thereafter, the reflective frame 100e is attached to the upper surface of the printed wiring board with an adhesive or the like, and the resin 300 is filled in each recess in the substrate 100 constituted by the reflective frame 100e. At this time, as shown in FIG. 1, the resin 300 is formed in a convex lens shape that rises upward from the substrate 100.
[0033]
In the illumination light source configured as described above, when the semiconductor light emitting element 200 emits light, the yellow light obtained by absorbing the blue light by the phosphor and the blue light not absorbed by the phosphor. White light emission is obtained by the color mixture.
[0034]
As described above, according to the first embodiment, since the number of times of mounting is one, the cost can be reduced. In particular, as the number of semiconductor light emitting elements 200 provided on the substrate 100 increases, the cost reduction effect becomes even greater.
[0035]
In addition, since the phosphor layer 100d is provided by using a thin film formation method, if the concentration of the phosphor dispersed and held by the phosphor layer 100d is made constant, the phosphor layer 100d can be obtained by simply controlling the film thickness of the phosphor layer 100d. Quantitative control of the body is very easy. As a result, the amount of the phosphor can be made uniform throughout the substrate 100, and the amount of the phosphor can be adjusted to a predetermined constant value, thereby preventing color variation.
[0036]
In addition, since the substrate 100 has the metal base 100a, each semiconductor light emitting element 200 dissipates heat through the metal base 100a, so that the temperature in the vicinity of each semiconductor light emitting element 200 is lowered, and the phosphor layer 100d has high energy blue light. Deterioration due to simultaneous exposure to high temperatures near the semiconductor light emitting device 200 is suppressed. Thereby, it becomes possible to extend the lifetime as a light source.
[0037]
Furthermore, since the phosphor layer 100d is laminated on the substrate 100, the resin 300 does not need to contain the phosphor, and can be fixed by a method such as mixing with a binder and baking to remove the binder.
[0038]
In the first embodiment, the base member of the substrate 100 is configured to use the metal base 100a. However, the present invention is not limited to this, and the base member made of glass epoxy or paper phenol may be used. Good. In this case, needless to say, it is not necessary to provide the insulating layer 100b.
[0039]
In the first embodiment, the substrate 100 is configured by a printed wiring board in which the reflection frame 100e is integrally attached to the upper surface, but may be configured not to use the reflection frame 100e. In the case of this configuration, after connecting each electrode of the semiconductor light emitting element 200 to the bonding pad of the corresponding wiring pattern conductor 100c with the lead wire W by wire bonding in the above manufacturing procedure, the resin 300 is applied to each semiconductor light emitting element 200 with a convex lens. What is necessary is just to form in a shape (for example, hemisphere).
[0040]
Furthermore, in the first embodiment, the semiconductor light emitting element is a lead wire formed by wire bonding and has a structure formed in a chip shape having P and N electrodes respectively connected to corresponding wiring pattern conductors on the same surface. However, the structure is not limited to this, and is formed in a chip shape having P and N electrodes connected to corresponding wiring pattern conductors on both surfaces facing in opposite directions by mounting bonding by die bonding and lead wires by wire bonding, respectively. But you can. Or the structure formed in the chip | tip form which has the P and N electrode respectively connected by the mounting joining by die bonding to a corresponding wiring pattern conductor on both sides may be sufficient. Needless to say, any of these structures can be mounted on a substrate, and the above-described effects can be achieved.
[0041]
FIG. 7 is a schematic view showing a cross-sectional structure of an illumination light source according to the second embodiment of the present invention. The second embodiment will be described below with reference to this figure. However, FIG. 7 shows a part of the sectional structure of the illumination light source.
[0042]
The illumination light source of FIG. 7 includes a plurality of semiconductor light emitting elements 200, a resin 300, and the like as in the first embodiment, and also includes a substrate 101 as a difference from the first embodiment.
[0043]
The substrate 101 is formed of a printed wiring board in which a reflective frame 101e having a plurality of mortar-shaped holes H2 having a minimum inner diameter of about 3 mm and a maximum inner diameter of about 5 to 10 mm is integrally attached to the upper surface. . The printed wiring board itself has a metal base 101a in which, for example, inverted frustoconical recesses Cav having a minimum inner diameter of about 2 mm and a maximum inner diameter of about 3 mm are formed on the upper surface side, and an insulating layer 101b is formed on the upper surface of the metal base 101a. Are laminated on one surface, and a wiring pattern conductor 101c is laminated on a necessary portion of the upper surface of the insulating layer 101b, and a phosphor layer 101d is laminated on a partial region of the wiring pattern conductor 101c to provide a desired circuit. . The phosphor layer 101d is made of an epoxy resin that disperses and holds a phosphor that emits yellow light when excited by light from the semiconductor light emitting device 200, and is a peripheral region in which each semiconductor light emitting device 200 is mounted, as shown in FIG. In the example, it is formed in almost the entire area of each recess Cav of the printed wiring board. Further, the peripheral wall of each hole H2 of the reflection frame 101e has a mirror finish.
[0044]
In this configuration, in the light emitted from the semiconductor light emitting device 200, the light in the lateral direction in addition to the light in the downward direction is converted into yellow light by the phosphor layer 101d. Therefore, the ratio of the yellow light Becomes higher.
[0045]
As described above, according to the second embodiment, it is possible to achieve the same effect as that of the first embodiment, and since the ratio of yellow light is increased, it is suitable for an application where the color temperature needs to be set low. A simple illumination light source can be obtained.
[0046]
In addition, the ratio of yellow light is increased, and for each semiconductor light emitting element 200, not all of the phosphor layer is laminated on a plane as in the first embodiment, but a portion of the phosphor layer is recessed Cav. Since the area of the phosphor layer for each semiconductor light emitting element 200 is increased by stacking on the slope, the concentration of the phosphor to be contained in the phosphor layer 101d when the emission color is the same as that of the first embodiment. Can be made lower than that of the first embodiment. This shortens the time during which the light stays in the phosphor layer 101d due to multiple scattering between the phosphors, so that deterioration of the phosphor and the resin containing the phosphor due to the photochemical reaction is more preferably suppressed than in the first embodiment. Is possible.
[0047]
Further, since the resin containing the phosphor is located far from the semiconductor light emitting device 200, the rate of deterioration due to the effect of the temperature of the semiconductor light emitting device 200 is accelerated and the photochemical reaction is accelerated.
[0048]
FIG. 8 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the third embodiment of the present invention. The third embodiment will be described below with reference to this figure. However, FIG. 8 shows a part of a sectional structure of the illumination light source.
[0049]
The illumination light source of FIG. 8 includes a plurality of semiconductor light emitting elements 200 and a resin 300 as in the second embodiment, and also includes a substrate 102 as a difference from the second embodiment.
[0050]
The substrate 102 is a printed wiring board on which a desired circuit is provided, and has a metal base 102a having a plurality of inverted truncated cone-shaped depressions Cav formed on the upper surface side, and an insulating layer 102b on the upper surface of the metal base 102a. Are laminated on one surface, a wiring pattern conductor 102c is laminated on a necessary portion of the upper surface of the insulating layer 102b, and a phosphor layer 102d is laminated on a partial region of the wiring pattern conductor 102c.
[0051]
Next, an example of the manufacturing procedure of the illumination light source will be described. First, a metal base 102a is prepared, and similarly to the first embodiment, an insulating layer 102b is laminated on the upper surface of the metal base 102a, a conductor layer is laminated on the upper surface of the insulating layer 102b, and then the conductor layer is formed. A phosphor layer 102d is laminated on the upper surface.
[0052]
Thereafter, in order to provide a desired circuit, the phosphor layer 102d above the portion where the conductor layer is to be removed is removed, and then a part of the conductor layer to be removed is removed by etching in order to provide the desired circuit. To do. Thereby, the wiring pattern conductor 102c is formed.
[0053]
Thereafter, the phosphor layer 102d in the region where the bonding pad is to be formed and the region outside the peripheral region where each semiconductor light emitting element 200 is mounted (see FIG. 8) is removed, and subsequently nickel and gold necessary for bonding are removed. The layer is formed by a method such as plating. Thereby, the substrate 102 is obtained.
[0054]
Thereafter, the semiconductor light emitting device 200 is mounted on the phosphor layer 102d located at the center of the bottom surface in each recess Cav of the substrate 102 (see FIG. 8), and then the semiconductor light emitting device 200 is connected with the lead wire W by wire bonding. Are connected to the bonding pads of the corresponding wiring pattern conductor 102c.
[0055]
Thereafter, the resin 300 is filled in each recess Cav of the substrate 102. At this time, as shown in FIG. 8, the resin 300 is formed in a convex lens shape that rises upward from the substrate 102.
[0056]
As described above, according to the third embodiment, it is possible to achieve the same effects as those of the second embodiment. Further, if each recess Cav is provided with a function of a reflecting plate, the same light distribution as when a reflecting frame is provided is possible.
[0057]
In the third embodiment, as shown in FIG. 8, each recess Cav is formed in the metal base 102a. However, each recess Cav may be formed by a press or the like. In the case of this press molding, as shown in FIG. 9, the protrusion 102f is formed on the lower surface of the metal base. Further, the press molding may be a procedure executed before manufacturing the substrate 102 or may be a procedure executed after manufacturing the substrate 102. Such press forming is not limited to the third embodiment, but can be applied to the metal base 101a of the second embodiment.
[0058]
In the third embodiment, the base member of the substrate 102 is the metal base 102a. However, the present invention is not limited to this, and as shown in FIG. 10, a substrate (resin substrate) made of glass epoxy or paper phenol is used. A base member MID in which wiring is provided by plating or the like may be used. In this case, as shown in FIG. 10, the insulating layer 102b is unnecessary. Such a base member is also applicable instead of the metal base 101a of the second embodiment.
[0059]
FIG. 11 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the fourth embodiment of the present invention. The fourth embodiment will be described below with reference to this figure. However, FIG. 11 shows a part of the sectional structure of the illumination light source.
[0060]
The illumination light source of FIG. 11 includes a substrate 102, a resin 300, and the like as in the third embodiment, and also includes a plurality of semiconductor light emitting elements 201 mounted on the substrate 102 as a difference from the third embodiment. Yes.
[0061]
The semiconductor light emitting element 201 has a blue LED element 201a made of a gallium nitride compound semiconductor, and P and N electrodes connected to the corresponding wiring pattern conductor 102c on the same surface by lead wires W by wire bonding, respectively. A phosphor layer 201b that is formed in a chip shape and emits yellow light when excited by the light of the LED element 201a is coated on the upper surface of the LED element 201a.
[0062]
Here, if only the upper surface of each LED element 201a is coated with the phosphor layer 201b, the light emitted downward and laterally from each semiconductor light emitting element 201 is directly emitted outside without passing through the phosphor layer 201b. Since the color tone is determined by the ratio between the blue light and the wavelength-converted yellow light, the color tone after light collection by the lens becomes uneven. In addition, if the phosphor layer 102d is simply laminated on the upper surface of the substrate 102, the light emitted upward from each semiconductor light emitting element 201 is emitted as it is without passing through the phosphor layer 102d. Unevenness occurs in the color tone after being condensed by the lens. On the other hand, in the fourth embodiment, light in almost all directions emitted from each semiconductor light emitting element 201 passes through the region containing the phosphor uniformly, so that uniform white light without color unevenness can be obtained. .
[0063]
As described above, according to the fourth embodiment, the same effect as that of the third embodiment can be obtained, and by providing the phosphor layer 201b in the semiconductor light emitting device 201, uniform white light without color unevenness can be obtained. Obtainable.
[0064]
FIG. 12 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the fifth embodiment of the present invention. The fifth embodiment will be described below with reference to this figure. However, FIG. 12 shows a part of a sectional structure of the illumination light source.
[0065]
The illumination light source of FIG. 12 includes a substrate 102, a plurality of semiconductor light emitting elements 200, a resin 300, and the like in the same manner as in the third embodiment. A light shielding plate 400 is provided in the (front) resin 300 to block direct light from the semiconductor light emitting element 200.
[0066]
Here, the size of the light shielding plate 400 is set according to the distance from the semiconductor light emitting element 200, the required light quantity, and the homogeneity of light. For example, as the distance from the semiconductor light emitting element 200 increases, the light shielding plate 400 increases in order to block direct light from the semiconductor light emitting element 200. The size of the light shielding plate 400 depends on the required light quantity and the homogeneity of light. Limited.
[0067]
Next, an example of the manufacturing procedure of the illumination light source will be described. First, the substrate 102 is prepared, and the semiconductor light emitting device 200 is mounted on the phosphor layer 102d located in the center of the bottom surface in each recess Cav of the substrate 102, and then the lead wire W is bonded by wire bonding to the semiconductor light emitting device. Each electrode of 200 is connected to the bonding pad of the corresponding wiring pattern conductor 102c.
[0068]
Thereafter, each recess Cav of the substrate 102 is filled with the resin 300 halfway, and after slightly curing, the light shielding plate 400 is placed above the semiconductor light emitting element 200, and then the resin 300 is filled thereon. At this time, as shown in FIG. 12, the resin 300 is formed in a convex lens shape that rises upward from the substrate 102.
[0069]
As described above, according to the fifth embodiment, since the ratio of the light emitted from each semiconductor light emitting element 200 to the outside without passing through the phosphor layer 102d is reduced, the same effects as in the fourth embodiment can be obtained. Is possible.
[0070]
FIG. 13 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the sixth embodiment of the present invention. The sixth embodiment will be described below with reference to this figure. However, FIG. 13 shows a part of the sectional structure of the illumination light source.
[0071]
The illumination light source of FIG. 13 includes a substrate 102, a plurality of semiconductor light emitting elements 200, a resin 300, and the like in the same manner as in the third embodiment. And a reflection plate 401 for reflecting the direct light of the semiconductor light emitting element 200 downward.
[0072]
The reflection plate 401 is provided in the same manner as the light shielding plate 400 of the fifth embodiment, and in the example of FIG. The reflection plate 401 may be a flat plate shape, but is formed in a downwardly convex shape, so that the light from the semiconductor light emitting element 200 can be uniformly reflected on the entire phosphor layer 102 d on the substrate 102.
[0073]
As described above, according to the sixth embodiment, since the ratio of the light emitted from each semiconductor light emitting element 200 to the outside without passing through the phosphor layer 102d is reduced, the same effects as in the fourth embodiment can be obtained. Is possible.
[0074]
FIG. 14 is a schematic diagram showing a cross-sectional structure of an illumination light source according to the seventh embodiment of the present invention. The seventh embodiment will be described below with reference to this drawing. However, FIG. 14 shows a part of the sectional structure of the illumination light source.
[0075]
The illumination light source of FIG. 14 includes a substrate 102, a plurality of semiconductor light emitting elements 200, a resin 300, and the like as in the third embodiment, and also includes a plurality of resin plates 402 as a difference from the third embodiment. ing.
[0076]
The resin plate 402 is made of a plate-like and translucent resin that disperses and holds a phosphor that emits yellow light when excited by light from the semiconductor light emitting element 200. Is provided. In addition, the resin plate 402 may be configured to have the same size as the light shielding plate 400 of the fifth embodiment, but light emitted upward from the semiconductor light emitting element 200 is not blocked by the resin plate 402. The plate 402 may be larger than the light shielding plate 400.
[0077]
As described above, according to the seventh embodiment, the light emitted from each semiconductor light emitting element 200 passes through the resin plate 402, and the ratio of going directly to the outside without passing through the region containing the phosphor is reduced. The same effects as in the fourth embodiment can be obtained.
[0078]
【The invention's effect】
  As is clear from the above, the claim 1To any of ~ 3According to the described invention, the mounting substrate has a plate-like base member, the conductor layer is laminated on one surface side of the base member, and the phosphor layer is laminated on the one surface side of the conductor layer. And a plurality of semiconductor light emitting elements mounted on one surface of the mounting substrate, it is possible to reduce costs and prevent color variations.
[0081]
  Claim1According to the described invention,in frontAbove each of the plurality of semiconductor light emitting devicesPositioned and blocks light emitted upward from each of the plurality of semiconductor light emitting elements and out of an optical path of light emitted from the plurality of semiconductor light emitting elements and converted into a predetermined color by the phosphor layer.Since the light-shielding plate provided is provided, uniform light with no color unevenness can be obtained.
[0082]
  Claim2According to the described invention,in frontAbove each of the plurality of semiconductor light emitting devicesPositioned and reflects light emitted upward from each of the plurality of semiconductor light emitting elements and out of an optical path of light emitted from the plurality of semiconductor light emitting elements and converted into a predetermined color by the phosphor layer.Since the reflection plate provided is provided, uniform light with no color unevenness can be obtained.
[0083]
  Claim3According to the described invention,in frontAbove each of the plurality of semiconductor light emitting devicesPositioned and converts light emitted upward from each of the plurality of semiconductor light emitting elements into a predetermined color and emitted from the plurality of semiconductor light emitting elements to be converted into a predetermined color by the phosphor layer. Outside the light pathSince the provided fluorescent plate is provided, uniform light with no color unevenness can be obtained.
[0084]
  According to a fourth aspect of the present invention, in the illumination light source according to any one of the first to third aspects, a depression is formed in each mounting region of the plurality of semiconductor light emitting elements on one surface of the mounting substrate. Therefore, for example, if a phosphor layer is also laminated on the side surface of the depression, the proportion of light of a predetermined color converted by the phosphor layer can be increased, and the phosphor to be contained in the phosphor layer can be increased. The concentration can be made lower than that of an illumination light source having a structure that does not form a depression, and as a result, deterioration of the phosphor and the resin containing the phosphor due to a photochemical reaction can be suitably suppressed.
  Claim5According to the described invention,4In the illumination light source according to any one of the above, since the base member is made of metal and an insulating layer is laminated between the base member and the conductor layer, the life as a light source can be extended. .
[0085]
  Claim6According to the described invention,5In the illumination light source according to any one of the above, the semiconductor light emitting element is a blue LED element, and the phosphor layer contains a phosphor that emits yellow light when excited by light from the LED element. Therefore, an illumination light source of white light can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a first embodiment of the present invention.
FIG. 2 is an explanatory diagram of a manufacturing procedure of the illumination light source shown in FIG.
3 is an explanatory diagram of a manufacturing procedure of the illumination light source shown in FIG. 1. FIG.
4 is an explanatory diagram of a procedure for manufacturing the illumination light source shown in FIG. 1. FIG.
5 is an explanatory diagram of a manufacturing procedure of the illumination light source shown in FIG. 1. FIG.
6 is an explanatory diagram of a manufacturing procedure of the illumination light source shown in FIG. 1. FIG.
FIG. 7 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a second embodiment of the present invention.
FIG. 8 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a third embodiment of the present invention.
FIG. 9 is a schematic view showing a cross-sectional structure of a metal base having a depression formed by press molding.
FIG. 10 is a schematic diagram showing a cross-sectional structure of another base member that replaces the metal base.
FIG. 11 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a fourth embodiment of the present invention.
FIG. 12 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a fifth embodiment of the present invention.
FIG. 13 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a sixth embodiment of the present invention.
FIG. 14 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a seventh embodiment of the present invention.
FIG. 15 is a schematic view showing a cross-sectional structure of a conventional light emitting diode.
FIG. 16 is a schematic view showing a cross-sectional structure of a conventional light emitting diode.
FIG. 17 is a schematic view showing a cross-sectional structure of a conventional planar light source.
FIG. 18 is a schematic view showing a conventional LED display.
[Explanation of symbols]
100, 101, 102 substrate
100a, 101a, 102a Metal base
100b, 101b, 102b Insulating layer
100c, 101c, 102c wiring pattern conductor
100d, 101d, 102d phosphor layer
100e, 101e Reflective frame
200, 201 Semiconductor light emitting device
300 resin
400 Shading plate
401 reflector
402 Resin plate

Claims (6)

A mounting substrate having a plate-like base member, a conductor layer laminated on one surface side of the base member, and a phosphor layer laminated on one surface side of the conductor layer;
A plurality of semiconductor light emitting elements mounted on one surface of the mounting substrate ;
Located above each of the plurality of semiconductor light emitting elements, blocks light emitted from each of the plurality of semiconductor light emitting elements, and is emitted from the plurality of semiconductor light emitting elements and predetermined by the phosphor layer. An illumination light source comprising: a light shielding plate provided outside an optical path of light converted into color . A mounting substrate having a plate-like base member, a conductor layer laminated on one surface side of the base member, and a phosphor layer laminated on one surface side of the conductor layer;
A plurality of semiconductor light emitting elements mounted on one surface of the mounting substrate ;
Located above each of the plurality of semiconductor light emitting elements, reflects light emitted upward from each of the plurality of semiconductor light emitting elements, and is emitted from the plurality of semiconductor light emitting elements and predetermined by the phosphor layer. A reflector provided outside the optical path of the light converted into color;
Illumination source comprising a. A mounting substrate having a plate-like base member, a conductor layer laminated on one surface side of the base member, and a phosphor layer laminated on one surface side of the conductor layer;
A plurality of semiconductor light emitting elements mounted on one surface of the mounting substrate;
Located above each of the plurality of semiconductor light emitting elements, converts light emitted from each of the plurality of semiconductor light emitting elements to a predetermined color, and is emitted from the plurality of semiconductor light emitting elements to emit the phosphor. A fluorescent plate provided outside the optical path of the light converted into a predetermined color in the layer;
Illumination source comprising a. A source as claimed in any one of claims 1 to 3 recesses that are formed in each mounting area of the plurality of semiconductor light emitting elements on one surface of the mounting substrate. The base member is made of a metal, an illumination light source according to any one of claims 1-4 that have been laminated insulating layer between said base member and said conductive layer. Before SL semiconductors light emitting elements are LED elements for blue, the phosphor layer when excited by the light from the LED elements to claim 1-5 phosphors that have been contained to emit yellow light The illumination light source according to any one of the above .

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