JP3546506B2 - Electronic component and method of manufacturing the same - Google Patents

Electronic component and method of manufacturing the same Download PDF

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Publication number
JP3546506B2
JP3546506B2 JP1685395A JP1685395A JP3546506B2 JP 3546506 B2 JP3546506 B2 JP 3546506B2 JP 1685395 A JP1685395 A JP 1685395A JP 1685395 A JP1685395 A JP 1685395A JP 3546506 B2 JP3546506 B2 JP 3546506B2
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Japan
Prior art keywords
electrode
hole
bump
substrate
insulating substrate
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JP1685395A
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Japanese (ja)
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JPH08213764A (en
Inventor
敬三郎 倉増
大蔵 安藤
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Description

【0001】
【産業上の利用分野】
本発明は、各種電子機器に用いる半導体素子、表面弾性波素子もしくは水晶振動子等を組み込んだ電子部品およびその製造方法に関するものである。
【0002】
【従来の技術】
以下に従来の電子部品について説明する。
【0003】
半導体素子や表面弾性波素子等を組み込むパッケージは、それらの素子に対する電磁気的な影響を防ぐとともに外気から気密を保ちつつ、それらの素子と連結しているリード線をパッケージの外部に取り出す構成としていた。図7および図8に示すように、アルミナ等製の第1絶縁板51の端面部に設けられた接続端子52と、第1絶縁板51とアルミナ等製の第2絶縁板53の間に設けられた第1導電パターン54と、第2絶縁板53の垂直部に形設したくぼみ部に設けられた導電層55と、第2絶縁板53の上面に設けられた第2導電パターン56とからなるケースは、グリーンシート状のアルミナ板に導電体を印刷形成した後に、2枚のグリーンシート状のアルミナ板を張り合わせてから焼成して作成される。このケースの上に半導体素子や表面弾性波素子等の素子57を接着固定し、AuまたはAl製のリード線58で素子57の電極部と第2導電パターン56とを接続した後に、金属ふた59を第2絶縁板53の上に設けた金属層60と半田付け、またはシーム溶接して封止した構成である。
【0004】
このような構成では、素子57と外部リードとの導電的な接続をリード線58でワイヤボンド技術を用いて行っているので、素子57の大きさに比べて電子部品の大きさが大きくなり、小型化が困難であった。
【0005】
また、素子57のワイヤボンド接続面とケースのワイヤボンド接続面との間の段差が大きくなると、良好なワイヤボンド接続が困難になるので、第2絶縁板53の一部を切り欠き、この部分に素子57を配置するようにして段差を無くしているが、このようなケースを作成することは複雑な工程を必要とし、ケースがコスト高となっていた。
【0006】
さらに、素子57が表面弾性波素子のときは、使用周波数が1GHz近辺の高周波帯域になると、リード線58の張り方やアース電極リード線と信号電極リード線の配置の仕方などによって、素子57の周波数特性が影響されるようになる。これは、高周波帯域では、それらのリード線がインダクタとして作用し、それらのリード線の張り方によりインダクタンスが変動するために生じるものである。
【0007】
【発明が解決しようとする課題】
上述のように従来の構成では、小型化が困難であるという問題点、また高周波帯域で使用する素子を組み込んだときは、インダクタンス変動による電気的特性の周波数変動が生じるという問題点、さらに製造工程が複雑でコスト高になるという問題点を有していた。
【0008】
本発明は上記従来の問題点を解決するもので、小型化でき、高周波帯域で使用する素子を組み込んだときにインダクタンス変動による電気的特性の周波数変動が生じず、製造工程が簡単でコスト高にならない電子部品およびその製造方法を提供することを目的とする。
【0009】
【課題を解決するための手段】
この目的を達成するために本発明の電子部品は、ガラス製の絶縁性基板の貫通孔に形成した電極膜を介して設けた突起電極を有するバンプ形成基板と、電極膜に接合し外部回路と接続する表面電極と、突起電極と接続する取り出し電極を有する素子と、バンプ形成基板と接合するガラス製の中ケースとふたを備え、突起電極と取り出し電極を接合し、前記中ケースとふたをバンプ形成基板に取り付け封止接合した構成としたものである。
【0010】
また、その製造方法は、ガラス製の絶縁性基板の素子の取り出し電極と一致する位置に貫通孔を設け、この貫通孔を含む前記絶縁性基板の片面に電極膜を形成し、ついで、前記絶縁性基板の貫通孔以外の電極膜を形成した面を絶縁体で覆い、貫通孔のみにメッキを行い貫通孔を埋めるとともに、絶縁性基板よりも突出した形状の突起電極を設けたバンプ形成基板を作成し、このバンプ形成基板上に取り出し電極を突起電極と一致させて位置合わせした後、加圧と加熱して合金接続を行い、ついで、ガラス製の中ケースとふたで封止する方法である。
【0011】
【作用】
この構成および方法において、素子と外部へのリードとの接続をAuやAl製のリード線を用いずに行っているので、大きさを小さくでき、リード線によるインダクタンスの発生がなくて周波数の変動が生じず、基板の構造も単純となる。
【0012】
【実施例】
(実施例1)
以下本発明の一実施例について、図面を参照しながら説明する。
【0013】
図1に示すように、絶縁性基板1に形設した貫通孔2の電極膜3を介して設けた突起電極4を有するバンプ形成基板5と、電極膜3に接合し外部回路に接続する表面電極6と、突起電極4と合金接合する取り出し電極7を有する素子8と、バンプ形成基板5と接合する中ケース9とふた10を備えた構成である。本実施例では素子8に表面弾性波を励振・受信するインターディジタルトランスデューサ電極8aを有する表面弾性波素子を用いた。
【0014】
以下、上記構成の電子部品の製造方法について説明する。
まず、バンプ形成基板5の製造方法について図2を用いて説明する。
【0015】
図2(a)に示すように、ソーダガラス製の絶縁性基板1の所定の位置に貫通孔2をサンドブラストにより形設し、ついで、図2(b)に示すように、絶縁性基板1の片側面の全面およびその反対面の電極膜3を形成しない領域にマスク治具(1)11およびマスク治具(2)12をセットした後に、電極膜3を貫通孔2を含む領域に形成する。電極膜3の形成は、真空蒸着やスパッタリングで可能であり、本実施例ではスパッタリングを用い、下層にCr膜(膜厚:30nm)、上層にCu膜(膜厚:2μm)を形成する。ついで、図2(c)に示すように、絶縁性基板1の片側面に形成した電極膜3を覆うようにメッキ防止用カバー13を張り付け、Auメッキ液につけてAuメッキ膜を形成する。絶縁性基板1の電極膜3は、貫通孔2の部分のみしかメッキ液に露出していないことから、貫通孔2のみにメッキされ、メッキ時間の経過とともに貫通孔2はAuメッキ膜で満たされ、さらにメッキを継続することにより、図2(d)に示すように、突出した状態のAu製の突起電極4が形成される。この後、メッキ防止用のカバー13を取り外すと、図2(e)に示すように、バンプ形成基板5が得られる。
【0016】
図3に示すように、バンプ形成基板5の突起電極4に素子8の取り出し電極7を位置合わせしてから、素子8を加圧と加熱を行うことで取り出し電極7と突起電極4の合金接合を行い、この後、中ケース9とふた10をセットして封止接続した後に、外部回路のプリント基板に半田付けするための電極として表面電極6をスクリーン印刷により形成して電子部品を完成させる。
【0017】
本実施例では、素子8として表面弾性波素子を用い、取り出し電極7の材料はAlとしたので、突起電極4のAuとはAu−Alの合金接合により接続した。
【0018】
また、バンプ形成基板5と中ケース9とふた10は同一材料であるソーダガラス製としたので、ソーダガラス同士の直接接合技術を用いて、封止接合は300℃、5分間で完了した。
【0019】
以上のように本実施例によれば、素子8の取り出し電極7をバンプ形成基板5の突起電極4と直接接合させているので、大きさを小型化でき、高周波帯域で使用する素子8を組み込んだときはインダクタンス変動による電気的特性の周波数変動が生じず、製造工程が簡単で製造コストを低減できる。
【0020】
なお、本実施例では、素子8を表面弾性波素子としたが、半導体素子等の他の素子としてもよい。また、突起電極4のメッキ材料としてAuを用いたが、Auに限定されるものではなく、素子8の取り出し電極7の材料を適当に選択することにより、各種メッキ材料も使用可能である。たとえば、素子8の取り出し電極7の表面を半田とするときには、突起電極4としてはAu,Sn,半田が使用可能であり、取り出し電極7の表面をAuとしたときには、突起電極4としてはAu,Sn,半田が少なくとも表面に形成されていれば使用可能であり、取り出し電極7の表面がSnであるときには、突起電極4としてはAuが使用可能である。
【0021】
また、本実施例では電極膜3として、Cu/Cr2層積層膜を用いたが、メッキ可能な金属であればよく、Cu/Cr2層積層膜に限定されるものではない。
【0022】
また、取り出し電極7と突起電極4の合金接合には、加圧と加熱に超音波加工を併用してもよい。
【0023】
さらに、本実施例の中ケース9とふた10に代えて、中ケース9とふた10を一体化したカバー(図示せず)に用いてもよい。
【0024】
(実施例2)
以下本発明の第2の実施例について、図面を参照しながら説明する。
【0025】
図4に示すように、アルミナ板製の絶縁性基板21に形設した貫通孔22とその周辺の両面部とに設けた電極膜23を有するパッケージ基板24と、電極膜23と合金接合する取り出し電極25を有する素子26と、パッケージ基板24と接合する金属ふた27を備えた構成である。本実施例では、素子26に電極26aを有する半導体素子を用いた。
【0026】
以下、上記構成の電子部品の製造方法について説明する。まず、図5に示したパッケージ基板24は、以下のようにして作成した。アルミナ板製の絶縁性基板21の所定の位置にサンドブラストにより貫通孔22を形設し、絶縁性基板21の両面部で電極膜23を形成しない領域にメタルマスクを設置した後に、真空蒸着やスパッタリングにより、貫通孔22を含むその周辺の両面部に電極膜23を形成して、パッケージ基板24を作成した。本実施例では、電極膜23をスパッタリングにより成膜し、下層にTi膜(膜厚:50nm)、上層にAu膜(膜厚:7μm)を形成した。次に、図6に示すように、パッケージ基板24上に素子26の取り出し電極25を貫通孔22と一致するように素子26を位置合わせして、素子26を加圧と加熱して取り出し電極25のAlと電極膜23のAuとを合金接合する。このとき、貫通孔22の大きさは取り出し電極25の大きさに比べて小さく構成してあり、取り出し電極25と電極膜23との接合領域で周辺を覆われることで外気との封止も達成される。この後、金属ふた27をパッケージ基板24と位置合わせして半田付けにより接合して、電子部品を完成させる。
【0027】
以上のように本実施例によれば、電極膜23の段差により突起させた電極を形成し、電極膜23と取り出し電極25の接合部が貫通孔22を囲うようにすることで貫通孔22を封止した構成により、前述実施例1の効果に加えて、メッキ加工が不要となるので、パッケージ基板24の作成が簡単となり、製造コストがより低減できる。なお、本実施例では、素子26を半導体素子としたが、表面弾性波素子等の他の素子であってもよい。また、パッケージ基板24の電極膜23としてAu/Ti積層膜を用いたが、取り出し電極25の材料との組み合わせで最適な構成を選択できることはいうまでもない。また、金属ふた27に代えて、前述実施例1の中ケース9とふた10もしくは中ケース9とふた10を一体化したカバーを用いてもよい。
【0028】
【発明の効果】
以上の説明からも明らかなように本発明は、ガラス製の絶縁性基板の貫通孔に形成した電極膜を介して設けた突起電極を有するバンプ形成基板と、表面電極と、取り出し電極を有する素子と、ガラス製の中ケースとふたを備え、突起電極と取り出し電極を接合し、ふたをバンプ形成基板に取り付け封止接合した構成、また、前記絶縁性基板の素子の取り出し電極と一致する位置に、貫通孔を設け、この貫通孔を含む前記絶縁性基板の片面に電極層を形成し、ついで前記絶縁性基板の貫通孔以外の電極膜を形成した面を絶縁体で覆い、貫通孔のみにメッキを行い貫通孔を埋めるとともに、前記絶縁性基板よりも突出した形状の突起電極を設けたバンプ形成基板を作成し、バンプ形成基板上に取り出し電極を突起電極と一致させて位置合わせした後、加圧と加熱して合金接続を行い、ガラス製の中ケースとふたで封止する方法により、小型化でき、高周波帯域で使用する素子を組み込んだときに、インダクタンス変動による電気的特性の周波数変動が生じず、製造工程が簡単でコスト高にならない優れた電子部品およびその製造方法を実現できるものである。
【図面の簡単な説明】
【図1】本発明の第1の実施例の電子部品の断面図
【図2】同電子部品のバンプ形成基板の製造方法を工程順に示した断面図
【図3】同電子部品のバンプ形成基板に素子を接合した状態の断面図
【図4】本発明の第2の実施例の電子部品の断面図
【図5】同電子部品のパッケージ基板の断面図
【図6】同電子部品のパッケージ基板に素子を接合した状態の断面図
【図7】従来の電子部品の一部を欠載して内部を示した外観斜視図
【図8】図7のA−A断面図
【符号の説明】
1 絶縁性基板
2 貫通孔
3 電極膜
4 突起電極
5 バンプ形成基板
6 表面電極
7 取り出し電極
8 素子
9 中ケース
10 ふた
[0001]
[Industrial applications]
The present invention relates to an electronic component incorporating a semiconductor element, a surface acoustic wave element, a crystal oscillator, or the like used for various electronic devices, and a method for manufacturing the same.
[0002]
[Prior art]
Hereinafter, conventional electronic components will be described.
[0003]
Packages incorporating semiconductor elements, surface acoustic wave elements, etc., were configured to take out the lead wires connected to those elements to the outside of the package while preventing electromagnetic effects on those elements and keeping airtight from the outside air. . As shown in FIGS. 7 and 8, a connection terminal 52 provided on an end surface of a first insulating plate 51 made of alumina or the like is provided between the first insulating plate 51 and a second insulating plate 53 made of alumina or the like. The first conductive pattern 54 provided, a conductive layer 55 provided in a recess formed in a vertical portion of the second insulating plate 53, and a second conductive pattern 56 provided on the upper surface of the second insulating plate 53 The case is formed by printing and forming a conductor on a green sheet-shaped alumina plate, and then bonding and firing two green sheet-shaped alumina plates. An element 57 such as a semiconductor element or a surface acoustic wave element is adhered and fixed on the case, and the electrode portion of the element 57 and the second conductive pattern 56 are connected with a lead wire 58 made of Au or Al. Is sealed with a metal layer 60 provided on the second insulating plate 53 by soldering or seam welding.
[0004]
In such a configuration, since the conductive connection between the element 57 and the external leads is performed using the wire bonding technique with the lead wire 58, the size of the electronic component is larger than the size of the element 57, It was difficult to reduce the size.
[0005]
In addition, if the step between the wire bond connection surface of the element 57 and the wire bond connection surface of the case becomes large, it becomes difficult to perform a good wire bond connection. Therefore, a part of the second insulating plate 53 is cut out. Although the step is eliminated by disposing the element 57 in such a case, creating such a case requires a complicated process, and the case is expensive.
[0006]
Furthermore, when the element 57 is a surface acoustic wave element, when the operating frequency is in a high frequency band around 1 GHz, the element 57 is changed depending on how to attach the lead wire 58 and how to arrange the ground electrode lead wire and the signal electrode lead wire. Frequency characteristics become affected. This is because, in the high frequency band, these leads act as inductors, and the inductance varies depending on how these leads are stretched.
[0007]
[Problems to be solved by the invention]
As described above, in the conventional configuration, it is difficult to reduce the size. In addition, when an element used in a high-frequency band is incorporated, a frequency variation in electrical characteristics occurs due to an inductance variation. However, there was a problem that it was complicated and the cost was high.
[0008]
The present invention solves the above-mentioned conventional problems, and can be miniaturized. When an element used in a high-frequency band is incorporated, frequency fluctuation of electric characteristics due to inductance fluctuation does not occur, thereby simplifying a manufacturing process and increasing cost. It is an object of the present invention to provide an electronic component and a manufacturing method thereof.
[0009]
[Means for Solving the Problems]
In order to achieve this object, an electronic component according to the present invention includes a bump-forming substrate having a protruding electrode provided through an electrode film formed in a through-hole of a glass insulating substrate, and an external circuit connected to the electrode film. and the surface electrode for connecting a device having a take-out electrode connected to the protruding electrode comprises a case and a lid in the glass to be bonded to the bump forming substrate, and joining the protruding electrodes and the extraction electrode, wherein in bump the case and the lid It is configured to be attached and sealed to the formation substrate.
[0010]
The manufacturing method therefor, a through hole in a position that matches the extraction electrodes of the elements of the glass insulating substrate provided by forming the insulating one side to the electrode film on the substrate including the through holes, then the insulation The surface on which the electrode film other than the through-hole of the non-conductive substrate is formed is covered with an insulator, plating is performed only on the through-hole to fill the through-hole, and the bump-formed substrate is provided with a protruding electrode having a shape protruding from the insulating substrate. It is a method of forming and taking out the electrode on this bump forming substrate, aligning it with the protruding electrode, aligning it, pressing and heating to make an alloy connection, and then sealing it with a glass inner case and lid. .
[0011]
[Action]
In this configuration and method, since the connection between the element and the external lead is performed without using a lead wire made of Au or Al, the size can be reduced, and there is no generation of inductance due to the lead wire, and the fluctuation of the frequency is reduced. Does not occur, and the structure of the substrate is simplified.
[0012]
【Example】
(Example 1)
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[0013]
As shown in FIG. 1, a bump forming substrate 5 having a projecting electrode 4 provided through an electrode film 3 of a through hole 2 formed in an insulating substrate 1, and a surface joined to the electrode film 3 and connected to an external circuit. The configuration includes an electrode 6, an element 8 having an extraction electrode 7 that is joined to the bump electrode 4, and a middle case 9 and a lid 10 that are joined to the bump forming substrate 5. In this embodiment, a surface acoustic wave device having an interdigital transducer electrode 8a for exciting and receiving a surface acoustic wave is used as the device 8.
[0014]
Hereinafter, a method for manufacturing the electronic component having the above configuration will be described.
First, a method for manufacturing the bump forming substrate 5 will be described with reference to FIG.
[0015]
As shown in FIG. 2A, a through hole 2 is formed at a predetermined position on an insulating substrate 1 made of soda glass by sandblasting, and then, as shown in FIG. After the mask jig (1) 11 and the mask jig (2) 12 are set on the entire surface on one side and on the opposite surface where the electrode film 3 is not formed, the electrode film 3 is formed in the region including the through hole 2. . The electrode film 3 can be formed by vacuum evaporation or sputtering. In this embodiment, a Cr film (thickness: 30 nm) is formed as a lower layer and a Cu film (thickness: 2 μm) is formed as an upper layer by using sputtering. Then, as shown in FIG. 2 (c), a plating prevention cover 13 is attached so as to cover the electrode film 3 formed on one side surface of the insulating substrate 1, and is immersed in an Au plating solution to form an Au plating film. The electrode film 3 of the insulating substrate 1 is plated only on the through-hole 2 because only the through-hole 2 is exposed to the plating solution, and the through-hole 2 is filled with the Au plating film as the plating time elapses. Further, by continuing the plating, as shown in FIG. 2D, the protruding Au protruding electrode 4 is formed. Thereafter, when the cover 13 for preventing plating is removed, the bump-formed substrate 5 is obtained as shown in FIG.
[0016]
As shown in FIG. 3, after aligning the extraction electrode 7 of the element 8 with the projection electrode 4 of the bump forming substrate 5, the element 8 is pressurized and heated to perform alloy bonding between the extraction electrode 7 and the projection electrode 4. After that, the middle case 9 and the lid 10 are set and sealed and connected, and then the surface electrode 6 is formed by screen printing as an electrode for soldering to a printed circuit board of an external circuit, thereby completing an electronic component. .
[0017]
In the present embodiment, a surface acoustic wave element was used as the element 8 and the material of the extraction electrode 7 was Al, so that Au of the protruding electrode 4 was connected by Au-Al alloy bonding.
[0018]
Since the bump-forming substrate 5, the middle case 9 and the lid 10 were made of the same material, soda glass, the sealing joining was completed at 300 ° C. for 5 minutes using a direct joining technique between the soda glasses.
[0019]
As described above, according to the present embodiment, since the extraction electrode 7 of the element 8 is directly bonded to the bump electrode 4 of the bump forming substrate 5, the size can be reduced and the element 8 used in a high frequency band is incorporated. In such a case, the frequency of the electrical characteristics does not fluctuate due to the fluctuation of the inductance, so that the manufacturing process is simple and the manufacturing cost can be reduced.
[0020]
In the present embodiment, the element 8 is a surface acoustic wave element, but may be another element such as a semiconductor element. Although Au is used as a plating material for the protruding electrode 4, the present invention is not limited to Au. Various plating materials can be used by appropriately selecting the material of the extraction electrode 7 of the element 8. For example, when the surface of the extraction electrode 7 of the element 8 is made of solder, Au, Sn, or solder can be used as the protruding electrode 4. When the surface of the extraction electrode 7 is made of Au, the projection electrode 4 is made of Au, Sn, or the like. As long as Sn and solder are formed on at least the surface, it can be used. When the surface of the extraction electrode 7 is Sn, Au can be used as the protruding electrode 4.
[0021]
Further, in the present embodiment, a Cu / Cr two-layer laminated film is used as the electrode film 3, but any metal that can be plated may be used, and is not limited to the Cu / Cr two-layer laminated film.
[0022]
Further, in the alloy joining of the extraction electrode 7 and the protruding electrode 4, ultrasonic processing may be used in combination with pressurization and heating.
[0023]
Further, instead of the middle case 9 and the lid 10 in this embodiment, a cover (not shown) in which the middle case 9 and the lid 10 are integrated may be used.
[0024]
(Example 2)
Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.
[0025]
As shown in FIG. 4, a package substrate 24 having through-holes 22 formed in an insulating substrate 21 made of an alumina plate and electrode films 23 provided on both sides around the through-holes 22 and a take-out for alloy bonding with the electrode films 23 The configuration includes an element 26 having an electrode 25 and a metal lid 27 joined to the package substrate 24. In this embodiment, a semiconductor element having the electrode 26a is used as the element 26.
[0026]
Hereinafter, a method for manufacturing the electronic component having the above configuration will be described. First, the package substrate 24 shown in FIG. 5 was created as follows. A through hole 22 is formed by sandblasting at a predetermined position on an insulating substrate 21 made of an alumina plate, and a metal mask is provided on both sides of the insulating substrate 21 in a region where the electrode film 23 is not formed, and then vacuum evaporation or sputtering is performed. As a result, an electrode film 23 was formed on both sides of the periphery including the through hole 22, and a package substrate 24 was formed. In this example, the electrode film 23 was formed by sputtering, and a Ti film (thickness: 50 nm) was formed as a lower layer, and an Au film (thickness: 7 μm) was formed as an upper layer. Next, as shown in FIG. 6, the element 26 is positioned on the package substrate 24 so that the extraction electrode 25 of the element 26 coincides with the through hole 22, and the element 26 is pressed and heated to remove the extraction electrode 25. Of Al and Au of the electrode film 23 are alloy-bonded. At this time, the size of the through hole 22 is configured to be smaller than the size of the extraction electrode 25, and the surrounding area is covered with the joining region between the extraction electrode 25 and the electrode film 23, thereby achieving sealing with the outside air. Is done. Thereafter, the metal lid 27 is aligned with the package substrate 24 and joined by soldering to complete the electronic component.
[0027]
As described above, according to the present embodiment, an electrode protruded by the step of the electrode film 23 is formed, and the through-hole 22 is formed by the junction between the electrode film 23 and the extraction electrode 25 surrounding the through-hole 22. With the sealed configuration, in addition to the effects of the first embodiment, plating is not required, so that the production of the package substrate 24 is simplified, and the manufacturing cost can be further reduced. In this embodiment, the element 26 is a semiconductor element, but may be another element such as a surface acoustic wave element. Further, although the Au / Ti laminated film is used as the electrode film 23 of the package substrate 24, it goes without saying that an optimum configuration can be selected in combination with the material of the extraction electrode 25. Further, instead of the metal lid 27, a cover obtained by integrating the middle case 9 and the lid 10 or the middle case 9 and the lid 10 according to the first embodiment may be used.
[0028]
【The invention's effect】
As is clear from the above description, the present invention provides a bump-forming substrate having a protruding electrode provided via an electrode film formed in a through-hole of a glass insulating substrate, a surface electrode, and an element having an extraction electrode. When provided with a case and cover in the glass, and joining the protruding electrodes and extraction electrodes, construction and sealing joint attaching a lid to the bump forming substrate, also in a position that matches the extraction electrode of the element of the insulating substrate , a through hole is provided, the one surface of an insulating substrate an electrode layer is formed, and then covering the insulating electrode film formed by surface other than the through hole of the substrate with an insulator comprising the through hole, only the through hole together fill the through-holes subjected to plating, the insulating substrate also create a bump forming substrate provided with a protruding electrode protruding shape than was aligned electrodes taken out to the bump forming substrate to match the protruding electrode , By heating the pressurized perform alloy connection, by a method of sealing a case and cover in a glass, can be miniaturized, when incorporating elements used in a high frequency band, the frequency of the electrical characteristics due to inductance variation It is possible to realize an excellent electronic component that does not change, has a simple manufacturing process, and does not increase the cost, and a manufacturing method thereof.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an electronic component according to a first embodiment of the present invention; FIG. 2 is a cross-sectional view illustrating a method of manufacturing a bump-formed substrate of the electronic component in a process order; FIG. FIG. 4 is a cross-sectional view of an electronic component according to a second embodiment of the present invention. FIG. 5 is a cross-sectional view of a package substrate of the electronic component. FIG. 6 is a cross-sectional view of a package substrate of the electronic component. FIG. 7 is an external perspective view showing the inside of a conventional electronic component with a part thereof removed, and FIG. 8 is an AA cross-sectional view of FIG.
DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Through hole 3 Electrode film 4 Projection electrode 5 Bump forming substrate 6 Surface electrode 7 Extraction electrode 8 Element 9 Middle case 10 Lid

Claims (3)

ガラス製の絶縁性基板に形成した貫通孔に形成した電極膜を介して前記貫通孔内部を満たし、かつ突出した状態に形成された突起電極を有するバンプ形成基板と、前記電極膜に接合し外部回路と接続する表面電極と、前記バンプ形成基板の前記突起電極と一致する位置に配設され、前記突起電極と接合する取り出し電極を有する素子と、ガラス製の中ケースとふたを備え、前記突起電極と前記取り出し電極を接合し、前記中ケースとふたを前記バンプ形成基板に取り付け直接接合により封止接合した電子部品。A bump-forming substrate that fills the through-hole via an electrode film formed in the through-hole formed in the glass insulating substrate and has a protruding electrode formed in a protruding state; A surface electrode connected to a circuit, an element provided at a position coincident with the bump electrode on the bump forming substrate, and having an extraction electrode joined to the bump electrode, a glass inner case and a lid, An electronic component in which an electrode and the extraction electrode are joined, and the middle case and the lid are attached to the bump forming substrate and sealed and joined by direct joining. ガラス製の絶縁性基板の素子の取り出し電極と一致する位置に貫通孔を設け、前記貫通孔を含む前記絶縁性基板の片面に電極膜を形成し、ついで前記絶縁性基板の貫通孔以外の電極膜を形成した面を絶縁体で覆い、前記貫通孔のみにメッキを行い、前記貫通孔を埋めるとともに前記絶縁性基板よりも突出した形状の突起電極を設けたバンプ形成基板を作成する工程と、前記バンプ形成基板上に前記素子の取り出し電極が前記突起電極と一致するように前記素子を位置合わせした後、加圧と加熱またはさらに超音波加工を併用して前記取り出し電極と前記突起電極との合金接続を行う工程と、ついで、ガラス製の中ケースとふたで封止する工程とを有する電子部品の製造方法。A through-hole is provided at a position corresponding to the extraction electrode of the element on the glass-made insulating substrate, an electrode film is formed on one surface of the insulating substrate including the through-hole, and an electrode other than the through-hole of the insulating substrate is formed. Covering the surface on which the film is formed with an insulator, plating only the through-hole, filling the through-hole, and forming a bump-formed substrate provided with a protruding electrode having a shape protruding from the insulating substrate; After aligning the element so that the extraction electrode of the element matches the projection electrode on the bump-formed substrate, the extraction electrode and the projection electrode are combined with pressure and heating or further ultrasonic processing. A method for producing an electronic component, comprising: a step of performing an alloy connection; and a step of sealing with a glass middle case and a lid. ガラス製の絶縁性基板とそれと同じガラス製の中ケースおよびふたとの接合をガラス同士の直接接合とした請求項2記載の電子部品の製造方法。3. The method for manufacturing an electronic component according to claim 2, wherein the glass insulating substrate and the same glass inner case and lid are bonded directly to each other.
JP1685395A 1995-02-03 1995-02-03 Electronic component and method of manufacturing the same Expired - Fee Related JP3546506B2 (en)

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JP3579740B2 (en) * 1998-04-18 2004-10-20 Tdk株式会社 Manufacturing method of electronic components
US7129576B2 (en) * 2003-09-26 2006-10-31 Tessera, Inc. Structure and method of making capped chips including vertical interconnects having stud bumps engaged to surfaces of said caps
JPWO2006001125A1 (en) 2004-06-25 2008-04-17 株式会社村田製作所 Piezoelectric device
JP2006197554A (en) * 2004-12-17 2006-07-27 Seiko Epson Corp Surface acoustic wave device and method of manufacturing the same, ic card, and mobile electronic equipment
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