JP3531511B2 - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JP3531511B2 JP3531511B2 JP36407298A JP36407298A JP3531511B2 JP 3531511 B2 JP3531511 B2 JP 3531511B2 JP 36407298 A JP36407298 A JP 36407298A JP 36407298 A JP36407298 A JP 36407298A JP 3531511 B2 JP3531511 B2 JP 3531511B2
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- Prior art keywords
- high frequency
- bias power
- plasma
- electromagnetic wave
- frequency bias
- Prior art date
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- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマ処理装置に
係り、特にエッチング工程の中でも層間絶縁膜（主に酸
化ケイ素を主成分とする）のエッチングに好適なプラズ
マ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus suitable for etching an interlayer insulating film (mainly containing silicon oxide as a main component) during an etching process.
【０００２】[0002]
【従来の技術】半導体デバイスプロセスにおいて、ウェ
ハの１２インチ化が間近に迫っており、半導体プロセス
装置、特にプラズマを用いたドライエッチング装置にお
いてはいかに均一、高精度に表面処理を行うかがエッチ
ング特性、スループット両面から極めて重要となってい
る。エッチングの均一化に不可欠な要素とは、ラジカル
とイオン両フラックスのウェハへの均一供給であり、高
精度なエッチングにはウェハに輸送する活性種組成の制
御が必須である。2. Description of the Related Art In a semiconductor device process, a wafer of 12 inches is approaching, and in a semiconductor process device, particularly a dry etching device using plasma, how to perform surface treatment uniformly and with high accuracy is an etching characteristic. However, it is extremely important in terms of throughput. An essential element for uniform etching is uniform supply of both radical and ion fluxes to the wafer, and control of the composition of active species transported to the wafer is essential for highly accurate etching.
【０００３】先に述べたように１２インチ以降のウェハ
の大口径化、半導体装置の素子の微細化に伴い、さらな
る高精度酸化膜エッチングを目指して、新たなプラズマ
源を搭載したエッチング装置の研究開発が盛んであり、
ＵＨＦ帯ＥＣＲプラズマ型もそのひとつである。この装
置では、プラズマ励起周波数として３００ＭＨｚ〜１Ｇ
ＨｚのＵＨＦ帯電磁波を用い、エッチング処理室外部に
設けた磁場印加手段による磁場との電子サイクロトロン
共鳴を積極的に利用することで、１０11cm-3台の中密度
かつ拡散領域が１〜２．５ｅＶという低電子温度のプラ
ズマを実現することが可能である。As described above, with the increase in the diameter of wafers of 12 inches or more and the miniaturization of the elements of semiconductor devices, a research on an etching apparatus equipped with a new plasma source is aimed at further accurate oxide film etching. Development is active,
UHF band ECR plasma type is one of them. In this device, the plasma excitation frequency is 300 MHz to 1 G
By using the electron cyclotron resonance with the magnetic field by the magnetic field applying means provided outside the etching processing chamber by using the UHF band electromagnetic wave of Hz, the medium density and the diffusion region of 10 11 cm −3 are 1-2. It is possible to realize plasma with a low electron temperature of 0.5 eV.
【０００４】この装置の場合、電磁波の導入は同軸線路
を介してアース電位導体、誘電体および導体板からなる
構造のマイクロストリップアンテナ（以後、ＭＳＡと呼
ぶ）によって行われる。被加工試料とそれに対向するＭ
ＳＡとの間隔は５０mmから１００mmの間隔である。In this device, electromagnetic waves are introduced by a microstrip antenna (hereinafter referred to as MSA) having a structure including a ground potential conductor, a dielectric and a conductor plate via a coaxial line. Sample to be processed and M facing it
The distance from SA is 50 mm to 100 mm.
【０００５】たとえば、ＡｒとＣ4Ｆ8の混合プラズマ中
で解離生成されたフッ素ラジカル濃度を低減し、対シリ
コン窒化膜選択比を向上させるために、ＭＳＡの導体板
としてシリコンもしくはカーボンを選択し、それに４０
０ｋＨｚ〜２０ＭＨｚの高周波バイアス電力をＵＨＦ帯
の電磁波に重畳させて印加することによりイオンを効率
よく導体板表面に引き込み、フッ素ラジカルの消費を行
なう。さらに、ウェハ中心領域と周辺領域とのフッ素ラ
ジカル分布を補正するためにウェハを設置する下部電極
周辺にシリコンもしくはカーボンで形成された円環状部
材（以後、フォーカスリングと呼ぶ）を設置し、導体板
同様、高周波バイアス電力を印加する手段が採用されて
いる。For example, in order to reduce the concentration of fluorine radicals generated by dissociation in a mixed plasma of Ar and C 4 F 8 and improve the selection ratio of silicon nitride film, silicon or carbon is selected as the conductor plate of MSA. And 40
By applying a high-frequency bias power of 0 kHz to 20 MHz on an electromagnetic wave in the UHF band while applying it, ions are efficiently drawn to the surface of the conductor plate, and fluorine radicals are consumed. Further, an annular member made of silicon or carbon (hereinafter referred to as a focus ring) is installed around the lower electrode on which the wafer is installed in order to correct the fluorine radical distribution between the central area of the wafer and the peripheral area. Similarly, a means for applying high frequency bias power is adopted.
【０００６】[0006]
【発明が解決しようとする課題】上記の従来装置では、
ＵＨＦ帯電源の他に最大３台の高周波電源が必要とな
る。現状では、下部電極に印加する高周波バイアス電力
を可変コンデンサにて分割し、フォーカスリングに印加
している。対向するＭＳＡの導体板には、対向アース電
位を取るために下部電極、フォーカスリングに印加する
高周波バイアス電力と周波数の異なる高周波バイアス電
力を別電源によって印加している。したがってＵＨＦ帯
電源のほかに２台の電源を用いているが、コストや設置
面積の面から考えると非常に負荷が大きい。In the above conventional device,
In addition to the UHF band power supply, up to three high frequency power supplies are required. At present, the high frequency bias power applied to the lower electrode is divided by a variable capacitor and applied to the focus ring. High frequency bias power applied to the lower electrode and the focus ring in order to obtain the opposite ground potential is applied to the opposing MSA conductor plates by a different power source. Therefore, two power sources are used in addition to the UHF band power source, but the load is extremely heavy in terms of cost and installation area.
【０００７】本発明の目的は、ＵＨＦ帯ＥＣＲ型エッチ
ング装置が有する上記問題点に鑑みてなされたものであ
り、イオンの引き込みに使用する高周波電源数を１台に
することで低コスト化、低設置面積化の可能なエッチン
グ装置を提供することにある。The object of the present invention was made in view of the above-mentioned problems of the UHF band ECR type etching apparatus. By reducing the number of high frequency power sources used for ion attraction to one, the cost and the cost can be reduced. An object of the present invention is to provide an etching device that can be installed in a small area.
【０００８】[0008]
【課題を解決するための手段】本発明のプラズマ処理装
置は、真空排気手段により真空排気されている真空容器
と、上記真空容器に原料ガスを導入するためのガス導入
手段と、被加工試料設置手段と、導体板、誘電体および
アース電位導体の３層構造からなる３００ＭＨｚ〜１Ｇ
Ｈｚの電磁波導入手段を有し、上記ガス導入手段により
上記真空容器内に導入されたガスを上記電磁波でプラズ
マ化し、上記プラズマにより上記被加工試料の表面処理
を行うプラズマ処理装置において、上記被加工試料設置
手段の周囲に円環状部材を備え、上記被加工試料設置手
段と上記円環状部材と上記電磁波導入手段に同一電源に
より高周波バイアス電力を印加することを特徴としてい
る。A plasma processing apparatus according to the present invention includes a vacuum container that is evacuated by a vacuum evacuation unit, a gas introduction unit for introducing a raw material gas into the vacuum container, and a sample to be processed installed. 300 MHz to 1 G consisting of a three-layer structure of means, conductor plate, dielectric and earth potential conductor
In the plasma processing apparatus, which has an electromagnetic wave introducing unit of Hz, converts the gas introduced into the vacuum container by the gas introducing unit into plasma with the electromagnetic wave, and performs the surface treatment of the sample to be processed with the plasma. An annular member is provided around the sample setting means, and high frequency bias power is applied to the sample setting means, the annular member and the electromagnetic wave introducing means by the same power source.
【０００９】上記手段によれば、上記被加工試料設置手
段と上記円環状部材と上記電磁波導入手段に、同一電源
により高周波バイアス電力を印加することで、低コス
ト、低設置面積のプラズマ処理装置を提供できる。According to the above means, a high-frequency bias power is applied to the sample mounting means, the annular member, and the electromagnetic wave introducing means by the same power source, so that a plasma processing apparatus having a low cost and a small installation area can be obtained. Can be provided.
【００１０】また本発明のプラズマ処理装置は、上記被
加工試料設置手段と、上記円環状部材と、上記電磁波導
入手段に印加する高周波バイアス電力の周波数が、４０
０ｋＨｚ〜２０ＭＨｚの範囲であることを特徴としてい
る。Further, in the plasma processing apparatus of the present invention, the frequency of the high frequency bias power applied to the sample mounting means, the annular member and the electromagnetic wave introducing means is 40.
It is characterized in that it is in the range of 0 kHz to 20 MHz.
【００１１】上記手段によれば、効率よくセルフバイア
スを発生し、イオンを入射させることで、シリコン製の
電磁波導入手段と円環状部材では、プラズマ中で解離生
成されたフッ素ラジカルの消費、被加工試料設置手段で
は高精度な被加工試料の表面処理が可能である。According to the above-mentioned means, the self-bias is efficiently generated and the ions are made to enter, so that in the electromagnetic wave introducing means and the annular member made of silicon, the fluorine radicals dissociated and generated in the plasma are consumed and the workpiece is processed. The sample setting means enables highly accurate surface treatment of the sample to be processed.
【００１２】また本発明のプラズマ処理装置は、高周波
バイアス電力をパルス変調し、上記被加工試料設置手段
と上記円環状部材に印加する高周波バイアス電力がＯＮ
のとき、対向する上記電磁波導入手段が高周波バイアス
電力に対しアース電位となり、上記電磁波導入手段に印
加する高周波バイアス電力がＯＮのとき、対向する上記
被加工試料接地手段がアース電位となることを特徴とし
ている。In the plasma processing apparatus of the present invention, the high frequency bias power is pulse-modulated, and the high frequency bias power applied to the sample mounting means and the annular member is turned on.
In this case, the opposing electromagnetic wave introducing means has a ground potential with respect to the high frequency bias power, and when the high frequency bias power applied to the electromagnetic wave introducing means is ON, the opposing sample grounding means has a ground potential. I am trying.
【００１３】上記手段によれば、対向した２平板に同一
周波数の高周波バイアス電力を対向アースを確保し印加
することが可能となる。According to the above means, it is possible to apply the high frequency bias power of the same frequency to the two opposed flat plates while ensuring the opposite ground.
【００１４】また本発明に係わるプラズマ処理装置は、
プラズマ中の活性種をモニターし、その変動量により、
パルス変調周波数とデューティー比を制御することを特
徴としている。The plasma processing apparatus according to the present invention is
By monitoring the active species in plasma,
It is characterized by controlling the pulse modulation frequency and the duty ratio.
【００１５】上記手段によれば、プラズマ中で生成され
た活性種が被加工試料表面に堆積する量に応じ、パルス
変調周波数とデューティー比を制御することで、高精度
な表面処理が可能となる。According to the above means, the pulse modulation frequency and the duty ratio are controlled according to the amount of active species generated in the plasma to be deposited on the surface of the sample to be processed, so that the surface treatment can be performed with high accuracy. .
【００１６】[0016]
【発明の実施の形態】図１は本発明の一実施のプラズマ
エッチング装置の概略構成を示す。本実施例では真空容
器１の周囲に空心コイル２が設置されている。真空容器
１にはガス導入管３により原料ガスを導入し、アース電
位導体１２、誘電体１３および表面にシリコン層１５を
設けた円盤状導体１５からなる電磁波放射アンテナに同
軸線路４を介して５００ＭＨｚ電源５にて発生した電磁
波を供給して、前記空心コイルにより発生した磁場との
相互作用によりプラズマを発生させる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a schematic structure of a plasma etching apparatus according to one embodiment of the present invention. In this embodiment, an air-core coil 2 is installed around the vacuum container 1. A raw material gas is introduced into the vacuum container 1 through a gas introduction pipe 3, and an electromagnetic wave radiation antenna composed of a ground potential conductor 12, a dielectric 13 and a disk-shaped conductor 15 provided with a silicon layer 15 on the surface is fed via a coaxial line 4 to 500 MHz. The electromagnetic wave generated by the power supply 5 is supplied to generate plasma by the interaction with the magnetic field generated by the air-core coil.
【００１７】真空容器１には下部電極６があり、この上
に被加工試料７を設置する。この下部電極６には、８０
０ＫＨｚの高周波バイアス電源８がブロッキングコンデ
ンサ９を介して接続されており、発生するおよそ１ｋＶ
〜２ｋＶのＶｐｐによりイオンを引き込んでエッチング
を行う。The vacuum container 1 has a lower electrode 6 on which a sample 7 to be processed is placed. This lower electrode 6 has 80
A high frequency bias power source 8 of 0 KHz is connected through a blocking capacitor 9 to generate about 1 kV.
Etching is performed by drawing in ions with Vpp of 2 kV.
【００１８】本実施例では原料ガスとして、Ｃ4Ｆ8とＡ
ｒの混合ガスを真空容器内に導入して、真空排気系１０
と真空容器の間に設置されたコンダクタンスバルブ１１
にて５〜４０ｍＴｏｒｒになるように調整し、シリコン
酸化膜のエッチングを行う。In this embodiment, C 4 F 8 and A are used as raw material gases.
The mixed gas of r is introduced into the vacuum container, and the vacuum exhaust system 10
Conductance valve 11 installed between the vacuum vessel and
Is adjusted to 5 to 40 mTorr and the silicon oxide film is etched.
【００１９】次に、プラズマ中で生成された活性種の制
御機構と下部電極も含めた高周波バイアス電力導入機構
について詳しく説明する。本実施例では、プラズマ中で
解離生成された活性種の制御、たとえばレジストマスク
やシリコン窒化膜とシリコン酸化膜との選択比を低下さ
せる原因となるフッ素ラジカルの制御として、電磁波放
射アンテナの表面反応と下部電極周囲に設置されたフォ
ーカスリング１７の表面反応を用いている。Next, the control mechanism of the active species generated in the plasma and the high frequency bias power introduction mechanism including the lower electrode will be described in detail. In the present embodiment, the surface reaction of the electromagnetic radiation antenna is used as the control of the active species generated by dissociation in plasma, for example, the control of the fluorine radicals that cause the reduction of the selection ratio between the resist mask or the silicon nitride film and the silicon oxide film. And the surface reaction of the focus ring 17 installed around the lower electrode.
【００２０】電磁波放射アンテナ表面とフォーカスリン
グ１７の表面はシリコンでできており、下部電極に印加
する高周波バイアス電力を分割印加することにより、セ
ルフバイアスを発生させ、イオンの入射を促すことでフ
ッ素ラジカルの消費を行っている。これにより、電磁波
放射アンテナは主にプラズマ中のフッ素ラジカル濃度の
調整を、フォーカスリングはフッ素ラジカル濃度分布の
調整をそれぞれ担っている。ただし、電磁波放射アンテ
ナとフォーカスリングの材質はフッ素ラジカルを消費で
きる機能を持つものであればよいため、カーボンや炭化
シリコンでも効果は同じであることは言うまでもない。The surface of the electromagnetic wave radiation antenna and the surface of the focus ring 17 are made of silicon, and a high frequency bias power applied to the lower electrode is dividedly applied to generate a self-bias, which promotes the incidence of ions to generate fluorine radicals. Is consuming. As a result, the electromagnetic radiation antenna mainly controls the concentration of fluorine radicals in the plasma, and the focus ring controls the distribution of fluorine radical concentration. However, it goes without saying that the materials of the electromagnetic radiation antenna and the focus ring may be carbon or silicon carbide, as long as they have a function of consuming fluorine radicals.
【００２１】電磁波放射アンテナとフォーカスリングへ
の高周波バイアス電力の導入は以下のように行う。ま
ず、図１に示すように、８００ｋＨｚの高周波バイアス
電力を２系統に分割、１系統を下部電極とフォーカスリ
ングへ、もう１系統を電磁波放射アンテナとし、それぞ
れをパルス変調する。The high frequency bias power is introduced into the electromagnetic wave radiation antenna and the focus ring as follows. First, as shown in FIG. 1, high-frequency bias power of 800 kHz is divided into two systems, one system for a lower electrode and a focus ring, and another system for an electromagnetic radiation antenna, and pulse modulation is performed for each system.
【００２２】図２にこの場合のタイミングチャートを示
す。下部電極、フォーカスリングに印加している高周波
バイアス電力が発振しているときは、対向面である電磁
波放射アンテナは対向アースとして機能し、逆に電磁波
放射アンテナに印加している高周波バイアス電力が発振
しているときは、対向面である下部電極はアース電位に
なるように構成されたフィルタ回路１８が設置されてい
る。これにより、同一周波数でも対向アースを確実に取
ることができ、従来マイクロ波ＥＣＲ型エッチング装置
や、ＩＣＰ型エッチング装置で問題となっていた高周波
バイアス電力の偏りが解決でき、電源数の低減による低
コスト化、低設置面積化が実現できる。FIG. 2 shows a timing chart in this case. When the high frequency bias power applied to the lower electrode and the focus ring is oscillating, the electromagnetic radiation antenna, which is the opposite surface, functions as a counter ground, and conversely the high frequency bias power applied to the electromagnetic radiation antenna oscillates. In the meantime, the lower electrode, which is the facing surface, is provided with the filter circuit 18 configured to have the ground potential. As a result, the opposite ground can be reliably taken even at the same frequency, the bias of the high frequency bias power, which has been a problem in the conventional microwave ECR type etching apparatus or ICP type etching apparatus, can be solved, and the reduction in the number of power sources reduces Cost reduction and reduction of installation area can be realized.
【００２３】高周波バイアス電力の分割は図１に示す可
変コンデンサ１９により行う。この場合、電力の分割比
はウェハ前面のシース容量と前述のコンデンサ容量Ｃ
１、Ｃ２の比率で決定されるため、所望の活性種状態に
なるように各コンデンサ容量と電源の入射電力を調整す
る必要がある。また、下部電極に印加する高周波バイア
ス電力が発振していないタイミングでは、セルフバイア
スによるイオンの入射がなく、活性種の堆積が選択的に
起こるため、シリコン酸化膜のエッチングがストップし
ないように、パルス変調周波数とデューティー比の制御
を行うことが重要である。The high frequency bias power is divided by the variable capacitor 19 shown in FIG. In this case, the power division ratio is the sheath capacitance on the front surface of the wafer and the above-mentioned capacitor capacitance C
Since it is determined by the ratio of 1 and C2, it is necessary to adjust the capacitance of each capacitor and the incident power of the power source so as to obtain a desired active species state. Also, at the timing when the high frequency bias power applied to the lower electrode does not oscillate, ions do not enter due to self-bias, and active species are selectively deposited. It is important to control the modulation frequency and duty ratio.
【００２４】さらに、図示しないが、電磁波放射アンテ
ナとフォーカスリングに高周波バイアス電力印加に加
え、温度調整手段を持たせた構成も本発明に入る。これ
によれば、高周波バイアス電力印加に加えて表面温度調
整を行なうことで、安定なエッチング処理が保証され
る。Further, although not shown, a structure in which a temperature adjusting means is provided in addition to the high frequency bias power application to the electromagnetic wave radiation antenna and the focus ring is also included in the present invention. According to this, the stable etching process is assured by adjusting the surface temperature in addition to applying the high frequency bias power.
【００２５】図３は、図１の構成にプラズマ中のラジカ
ル分布をモニターする機能を付加し、電磁波放射アンテ
ナとフォーカスリングへの高周波バイアス電力および、
表面温度にフィードバックさせる機能を設けた実施例で
ある。たとえば、被加工試料処理中にプラズマが変動し
た場合、フッ素ラジカルの濃度や径方向分布の変動をラ
ジカル分布モニター手段により検出し、その差に見合う
高周波バイアス電力を電磁波放射アンテナとフォーカス
リングに印加することでイオンの加速電圧を制御する。In FIG. 3, a function of monitoring radical distribution in plasma is added to the configuration of FIG. 1, and high frequency bias power to the electromagnetic wave radiation antenna and focus ring, and
This is an example in which a function of feeding back the surface temperature is provided. For example, when the plasma fluctuates during processing of the sample to be processed, fluctuations in the concentration and radial distribution of fluorine radicals are detected by the radical distribution monitoring means, and high frequency bias power matching the difference is applied to the electromagnetic wave radiation antenna and the focus ring. This controls the ion acceleration voltage.
【００２６】本実施例の場合、ラジカル分布モニター手
段として、ラジカルからの発光を測定している。ウェハ
表面近傍からの発光を光学系２０にて分光器２１に導入
し、光電子増倍管２２からの信号をパーソナルコンピュ
ータ２３に取り込むことでラジカルの濃度と分布を測定
し、それが所望量となるように電磁波放射アンテナとフ
ォーカスリングへの高周波バイアス電力を調整する。In the case of the present embodiment, light emission from radicals is measured as a radical distribution monitoring means. Light emitted from the vicinity of the wafer surface is introduced into the spectroscope 21 by the optical system 20, and the signal from the photomultiplier tube 22 is taken into the personal computer 23 to measure the concentration and distribution of radicals, which is the desired amount. In this way, the high frequency bias power to the electromagnetic radiation antenna and the focus ring is adjusted.
【００２７】これによれば、たとえば図４に示すように
ウェハ面内窒化膜エッチング速度差はフォーカスリング
へのイオンの加速電圧に依存するために、あらかじめダ
ミーウェハを使って条件出しをする必要が無く、さら
に、処理中の微妙な変動に対しても安定なエッチング処
理を高精度に行なうことが可能となる。According to this, for example, as shown in FIG. 4, the in-wafer nitride film etching rate difference depends on the accelerating voltage of the ions to the focus ring, so that it is not necessary to precondition using a dummy wafer. Further, it is possible to perform a stable etching process with high accuracy even with a slight change during the process.
【００２８】[0028]
【発明の効果】本発明により、ＭＳＡ構造を有した電磁
波放射アンテナと、被加工試料設置手段である下部電極
周囲に配置された円環状部材であるフォーカスリングに
高周波バイアス電力を印加し、プラズマ中の活性種制御
を行うＵＨＦ帯ＥＣＲ型プラズマエッチング装置におい
て問題となる、電源数の増大が低減され、装置の低コス
ト、低設置面積化に貢献できる。According to the present invention, a high frequency bias power is applied to an electromagnetic wave radiation antenna having an MSA structure and a focus ring, which is an annular member arranged around a lower electrode which is a sample setting means, in a plasma. The increase in the number of power sources, which is a problem in the UHF band ECR type plasma etching apparatus for controlling the active species, is reduced, which can contribute to the low cost and the small installation area of the apparatus.
【図１】本発明の一実施例のドライエッチング装置の概
略縦断面図。FIG. 1 is a schematic vertical sectional view of a dry etching apparatus according to an embodiment of the present invention.
【図２】下部電極、フォーカスリングと電磁波放射アン
テナに印加するパルス変調のタイミングチャート。FIG. 2 is a timing chart of pulse modulation applied to a lower electrode, a focus ring and an electromagnetic wave radiation antenna.
【図３】本発明の別の実施例のドライエッチング装置の
概略縦断面図。FIG. 3 is a schematic vertical sectional view of a dry etching apparatus according to another embodiment of the present invention.
【図４】ウェハ面内の窒化膜エッチング速度差とフォー
カスリングへのイオンの加速電圧との関係を示す測定
図。FIG. 4 is a measurement diagram showing a relationship between a difference in etching rate of a nitride film within a wafer surface and an acceleration voltage of ions to a focus ring.
１…真空容器、２…空心コイル、３…ガス導入管、４…
同軸線路、５…５００ＭＨｚ電源、６…下部電極、７…
半導体ウェハ、８…高周波バイアス電源、９…ブロッキ
ングコンデンサ、１０…真空排気系、１１…コンダクタ
ンスバルブ、１２…アース電位導体、１３…誘電体、１
４…円板状導体板、１５…シリコン円板、１６…チャッ
ク部、１７…フォーカスリング、１８…フィルタ回路、
１９…可変コンデンサ、２０…光学系、２１…分光器、
２２…光電子増倍管、２３…パーソナルコンピュータ。DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Air core coil, 3 ... Gas introduction pipe, 4 ...
Coaxial line, 5 ... 500 MHz power supply, 6 ... Lower electrode, 7 ...
Semiconductor wafer, 8 ... High frequency bias power source, 9 ... Blocking capacitor, 10 ... Vacuum exhaust system, 11 ... Conductance valve, 12 ... Ground potential conductor, 13 ... Dielectric material, 1
4 ... Disc-shaped conductor plate, 15 ... Silicon disc, 16 ... Chuck portion, 17 ... Focus ring, 18 ... Filter circuit,
19 ... Variable condenser, 20 ... Optical system, 21 ... Spectroscope,
22 ... Photomultiplier tube, 23 ... Personal computer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 清二 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 田地 新一 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 平９−120957（ＪＰ，Ａ) 特開 平10−261498（ＪＰ，Ａ) 特開2000−164583（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/3065 C23F 4/00 H05H 1/46 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiji Yamamoto 1-280, Higashi Koikeku, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd. (72) Shinichi Tachi 1-280, Higashi Koikeku, Kokubunji, Tokyo Hitachi Ltd. (56) References JP-A-9-120957 (JP, A) JP-A-10-261498 (JP, A) JP-A-2000-164583 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/3065 C23F 4/00 H05H 1/46
Claims (3)
器と、上記真空容器に原料ガスを導入するためのガス導
入手段と、被加工試料設置手段と、導体板、誘電体およ
びアース電位導体の３層構造からなる３００ＭＨｚ〜１
ＧＨｚの電磁波導入手段を有し、上記ガス導入手段によ
り上記真空容器内に導入されたガスを上記電磁波でプラ
ズマ化し、上記プラズマにより被加工試料の表面処理を
行うプラズマ処理装置において、 上記被加工試料設置手段の周囲に円環状部材を備え、上
記被加工試料設置手段と上記円環状部材と上記電磁波導
入手段に、同一電源により高周波バイアス電力を印加
し、 上記高周波バイアス電力をパルス変調し、上記被加工試
料設置手段と上記円環状部材に印加する高周波バイアス
電力がＯＮのとき、対向する上記電磁波導入手段が高周
波バイアス電力に対しアース電位となり、上記電磁波導
入手段に印加する高周波バイアス電力がＯＮのとき、対
向する上記被加工試料接地手段がアース電位となること
を特徴とするプラズマ処理装置。 1. A vacuum container which is evacuated by an evacuation unit, a gas introducing unit for introducing a raw material gas into the vacuum container, a sample setting unit, a conductor plate, a dielectric and a ground potential conductor. 300MHz to 1 consisting of 3 layers
A plasma processing apparatus having a GHz electromagnetic wave introducing means, wherein the gas introduced into the vacuum container by the gas introducing means is converted into plasma by the electromagnetic waves, and the surface of the sample to be processed is treated with the plasma. An annular member is provided around the setting means, and high frequency bias power is applied to the sample mounting means, the annular member and the electromagnetic wave introducing means by the same power source.
Then, pulse-modulate the above high-frequency bias power and
Material setting means and high frequency bias applied to the annular member
When the power is ON, the opposing electromagnetic wave introducing means has a high frequency.
The earth potential is applied to the wave bias power, and the electromagnetic wave
When the high frequency bias power applied to the input means is ON,
Facing the sample grounding means facing to the ground potential
A plasma processing apparatus characterized by the above.
て、上記被加工試料設置手段と上記円環状部材と上記電
磁波導入手段に印加する高周波バイアス電力の周波数が
４００ｋＨｚ〜２０ＭＨｚの範囲であることを特徴とす
るプラズマ処理装置。2. The plasma processing apparatus according to claim 1, wherein the frequency of the high frequency bias power applied to the sample mounting means, the annular member and the electromagnetic wave introducing means is in the range of 400 kHz to 20 MHz. And a plasma processing apparatus.
置において、プラズマ中の活性種をモニターし、その変
動量により、パルス変調周波数とデューティー比を制御
することを特徴とするプラズマ処理装置。 3. The plasma processing apparatus according to claim 1, wherein the active species in the plasma are monitored, and the pulse modulation frequency and the duty ratio are controlled according to the fluctuation amount thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36407298A JP3531511B2 (en) | 1998-12-22 | 1998-12-22 | Plasma processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36407298A JP3531511B2 (en) | 1998-12-22 | 1998-12-22 | Plasma processing equipment |
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| Publication Number | Publication Date |
|---|---|
| JP2000188284A JP2000188284A (en) | 2000-07-04 |
| JP3531511B2 true JP3531511B2 (en) | 2004-05-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250967A (en) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | Plasma treating apparatus and method, and focus ring |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001155899A (en) * | 1999-11-25 | 2001-06-08 | Tadahiro Omi | Plasma processing apparatus and process using the same |
| US6544895B1 (en) | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
| US6485572B1 (en) | 2000-08-28 | 2002-11-26 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
| US7658816B2 (en) | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
| TWI488236B (en) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
| JP5371466B2 (en) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
| JP6267989B2 (en) * | 2013-02-18 | 2018-01-24 | 東京エレクトロン株式会社 | Plasma processing method and capacitively coupled plasma processing apparatus |
| KR20150131095A (en) * | 2013-03-15 | 2015-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber |
| US10032608B2 (en) | 2013-03-27 | 2018-07-24 | Applied Materials, Inc. | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground |
| CN106415779B (en) * | 2013-12-17 | 2020-01-21 | 东京毅力科创株式会社 | System and method for controlling plasma density |
| JP7174687B2 (en) * | 2019-11-29 | 2022-11-17 | 東京エレクトロン株式会社 | Plasma processing apparatus and etching method |
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1998
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250967A (en) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | Plasma treating apparatus and method, and focus ring |
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|---|---|
| JP2000188284A (en) | 2000-07-04 |
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