JP3522971B2 - High frequency devices - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency device used for communication equipment, and more particularly to a resonator and a filter, or a high-frequency device constructed by using them.

[0002]

2. Description of the Related Art Communication equipment for wireless or wired information communication is composed of various devices such as an amplifier, a mixer and a filter, and many devices utilizing resonance characteristics are included. For example, the filter has a function of arranging a plurality of resonant elements to pass only a specific frequency band. Such a filter is required to have a characteristic that the insertion loss is small and that it does not pass a band other than a desired band, and for that purpose, a resonant element having a high unloaded Q value is required.

As one method for realizing a resonant element having a high unloaded Q value, a superconductor is used as a metal conductor forming the resonant element, and a very low loss material such as sapphire or MgO is used as a dielectric substrate. There is a method of using. However, in this case, the no-load Q value becomes 10,000 or more, and a very sharp resonance characteristic is obtained, so that the desired characteristic cannot be obtained unless the resonance characteristic is adjusted with high precision at the design stage.

In order to overcome this problem, a resonator and a filter having a resonance frequency adjusting function have been proposed (Reference 1: Japanese Patent Laid-Open No. 1-190001). In this example, the resonance element is composed of superconductors having two different values of the critical magnetic field, and by adjusting the strength of the magnetic field applied to them, the superconducting characteristics are destroyed and the resonance frequency is changed. . However, this method has a drawback in that it requires a magnetic field generation source that generates a strong magnetic field in order to change the characteristics of the superconductor, resulting in a large-scale device.

As another method, there is known a method in which a heating element is provided in the vicinity of a resonance element composed of a superconductor and the superconducting characteristics are destroyed by heat (Reference 2: Y. Nagai, D, F, Hebert
andT.Van Duzer, Appl.Phys.Lett, Vol.63, No.6.9 Au
gust, 1993, p.830, “Properties of superconductive b
This method is simpler than the method using a magnetic field as in the above-mentioned Document 1, but this method has a slower operating speed because it requires generation of heat by passing an electric current through the heating element. In order to increase the operating speed, it is necessary to maintain the ambient temperature of the filter near the transition temperature T _{c of the} superconductor, but it is very difficult to maintain such ambient temperature. is there.

Further, in the methods of Documents 1 and 2, the low loss property of the superconductor is sacrificed by destroying the superconducting property of the superconductor. Therefore, there is a problem that the low loss property and the adjustable range have a trade-off relationship.

As still another method, a gap is provided at the center of the transmission line, a dielectric material whose permittivity changes according to an applied voltage is attached to the gap portion, and a resonance frequency is changed by applying a voltage to the transmission line. There is a method (Reference 3: James A. Beall, Ronald H.ono, David)
Galt and John C. Price, IEEE MTT-S Digest, 1993,
P.1421, "TUNABLE HIGH TEMPERATURE SUPERCONDUCTO
R MICROSTRIP RESONATORS "). However, in this method, a gap must be provided at the maximum current point in the center of the transmission line that becomes the resonance element, so that the unloaded Q value is 1,000.
There is a problem that only the following low resonators can be realized.

[0008]

Among the conventional techniques for varying the resonance frequency as described above, the superconducting characteristics are destroyed by adjusting the strength of the magnetic field applied to the superconductor forming the resonance element. The variable resonant frequency requires a magnetic field generation source that generates a strong magnetic field in order to change the characteristics of the superconductor, and thus has a problem that the device becomes large-scale.

Further, in the case of changing the resonance frequency by breaking the superconducting property by heating the superconductor forming the resonance element, the operating speed is slow and the low loss property of the superconductor is sacrificed. There is a problem.

Further, in the case where a dielectric material whose permittivity changes with a voltage is attached to the gap portion provided in the center of the transmission line and the resonance frequency is changed by applying a voltage to the dielectric material through the transmission line, it is not possible. There is a problem that a resonator having a high load Q value cannot be realized.

The present invention overcomes the problems of the prior art as described above, can change the resonance frequency in a wide range at a high speed with a simple structure, and when the superconductor is used as the resonance element, the superconducting material can be made low. It is an object of the present invention to provide a high frequency device capable of increasing the no-load Q value without sacrificing loss.

[0012]

A first high frequency device according to the present invention is a resonator including a resonance element made of a superconductor, an electric insulating layer laminated on the resonator, and the electric insulating layer. A first electrode laminated on the dielectric layer; a dielectric layer laminated on the first electrode layer, the dielectric constant of which changes according to an applied electric field; a second electrode laminated on the dielectric layer; And a supply means for supplying energy to the first and second electrodes so that the resonance frequency of the above-mentioned becomes a desired frequency.

In such a high frequency device, energy is supplied to the first and second electrodes by the supply means,
As a result, the dielectric constant of the dielectric layer changes according to the electric field generated between the first electrode and the second electrode. This change in the dielectric constant changes the impedance of the resonance elements, and for example, in a case where a plurality of resonance elements are arranged close to each other to form a filter, the coupling amount between the resonance elements changes. Therefore, the resonance frequency of the resonator, the pass frequency of the filter, and other characteristics can be adjusted. The energy supplied from the supply means may be voltage.

The thickness of the first and second electrodes is preferably less than or equal to the skin depth of the carrier frequency in order to facilitate the transmission of radio waves. Further, when the first and second electrodes are made of a superconductor, it is preferable that the thickness is equal to or less than the magnetic field penetration length.

The dielectric layer may have a predetermined distribution of at least one of the dielectric constant and the thickness in advance.

The first and second electrodes may be made of different materials. In this case, it is preferable that the energy supplied does not include the difference in work function of the constituent materials.

Further, one of the first and second electrodes may be divided into a plurality of regions, and energy may be supplied from the supply means to each of the plurality of regions. At this time, the supply means preferably supplies different voltages to the plurality of regions so that the dielectric constant of the dielectric layer has a predetermined distribution.

A second high frequency device according to the present invention is
A plate-shaped resonance element made of a superconductor, a dielectric member provided in the vicinity of the resonance element, the dielectric constant of which changes according to an applied electric field, and a plate of the resonance element provided in proximity to the dielectric member. A plurality of electrodes for applying an electric field to the dielectric member along a surface, and a supply unit for supplying energy to the plurality of electrodes so that a desired dielectric constant is generated in the dielectric member. And

According to such a high-frequency device, energy is supplied to the plurality of electrodes by the supply means, whereby the dielectric constant of the dielectric member changes according to the electric field generated between the electrodes. The electric field is generated along the plate surface of the resonant element. This change in the dielectric constant changes the impedance of the resonance elements, and for example, in a case where a plurality of resonance elements are arranged close to each other to form a filter, the coupling amount between the resonance elements changes. Therefore, the resonance frequency of the resonator, the pass frequency of the filter, and other characteristics can be adjusted. The energy supplied from the supply means may be voltage.

The supplying means may be configured to supply energy to the plurality of electrodes so that a desired dielectric constant distribution is generated in the dielectric member.

The thickness of the plurality of electrodes is preferably less than or equal to the skin depth of the radio wave in order to facilitate the propagation of the radio wave. Further, when the plurality of electrodes are made of a superconductor, The thickness is preferably equal to or less than the magnetic field penetration length.

The dielectric member may be provided in advance so that at least one of the dielectric constant and the thickness has a predetermined distribution.

The plurality of electrodes may be arranged in the resonance direction of the resonance element.

Further, the resonance circuit may be composed of a resonance element and a dielectric member.

When the width of the resonant element is L1 and the distance between the resonant element and the plurality of electrodes is L2, the resonant element and the plurality of electrodes are arranged so as to satisfy the condition of L1 <L2. Preferably.

A stripline may be formed by the resonant element, the plurality of electrodes, and the dielectric member.

Further, the second high frequency device includes a dielectric layer provided in contact with the resonant element and having a dielectric constant different from that of the dielectric member, and the resonator includes the resonant element and the dielectric layer. It may be composed of layers.

A gap may be provided at a predetermined position of the resonator element.

Further, the plurality of electrodes may be installed at different predetermined intervals.

The supply means may be configured to supply different voltages to the plurality of electrodes.

Further, the plurality of electrodes may be formed in an interdigital shape.

A third high frequency device according to the present invention is
A resonance element made of a superconductor, a dielectric member provided near the resonance element and having a dielectric constant that changes according to an applied electric field, and a dielectric member provided near the dielectric member and perpendicular to the resonance direction of the resonance element. A plurality of interdigital-shaped electrodes provided so as to form a voltage, and voltage applying means for applying a voltage to the plurality of electrodes so that a desired dielectric constant distribution is generated in the dielectric member. And

In such a high frequency device, a voltage is applied to the plurality of electrodes by the voltage applying means, whereby the dielectric constant of the dielectric member changes according to the electric field generated between the plurality of electrodes. This change in the dielectric constant changes the impedance of the resonance elements, and for example, in a case where a plurality of resonance elements are arranged close to each other to form a filter, the coupling amount between the resonance elements changes. Therefore, the resonance frequency of the resonator, the pass frequency of the filter, and other characteristics can be adjusted.

A fourth high frequency device according to the present invention is
A dielectric layer whose permittivity changes in accordance with an applied electric field; and a resonance element made of a superconductor provided on the dielectric layer,
A plurality of ground portions provided below the dielectric layer, and between the plurality of ground portions such that the plurality of electrodes and the plurality of ground portions are alternately provided below the dielectric layer. And a means for supplying a voltage to the plurality of electrodes.

In such a high-frequency device, a voltage is supplied to the plurality of electrodes by the supply means, whereby the dielectric constant of the dielectric layer changes according to the electric field generated between the plurality of electrodes and the ground portion. This change in the dielectric constant changes the impedance of the resonance elements, and for example, in a case where a plurality of resonance elements are arranged close to each other to form a filter, the coupling amount between the resonance elements changes. Therefore, the resonance frequency of the resonator, the pass frequency of the filter, and other characteristics can be adjusted.

A fifth high frequency device according to the present invention is
A resonance element made of a superconductor, a dielectric member provided close to the resonance element, having a dielectric constant that changes in accordance with light irradiation, and having a predetermined distribution in at least one of the dielectric constant and the thickness, And an irradiation unit that irradiates the dielectric member with light so that a desired dielectric constant distribution is generated in the dielectric member.

In such a high-frequency device, the irradiating means irradiates the dielectric member with light, whereby the dielectric constant of the dielectric member changes. Due to this change in dielectric constant,
The impedance of the resonance element changes, and for example, in the case where a plurality of resonance elements are arranged close to each other to form a filter, the coupling amount between the resonance elements changes. Therefore, the resonance frequency of the resonator, the pass frequency of the filter, and other characteristics can be adjusted.

A resonator may be constituted by the resonant element and the dielectric member.

Further, the high frequency device further comprises a dielectric layer provided in contact with the resonance element and having a dielectric constant different from that of the dielectric member, and the resonance element and the dielectric layer constitute a resonator. You may.

A sixth high frequency device according to the present invention is
A resonance element made of a superconductor, a dielectric member provided close to the resonance element, having a permittivity changing with heating, and having a predetermined distribution in at least one of the permittivity and the thickness; A heating means for heating the dielectric member so that a desired dielectric constant distribution is generated in the body member.

In such a high frequency device, the dielectric member is heated by the heating means, which changes the dielectric constant of the dielectric member. This change in the dielectric constant changes the impedance of the resonance elements, and for example, in a case where a plurality of resonance elements are arranged close to each other to form a filter, the coupling amount between the resonance elements changes. Therefore, the resonance frequency of the resonator, the pass frequency of the filter, and other characteristics can be adjusted.

A resonator may be constituted by the resonant element and the dielectric member.

Further, the high frequency device further comprises a dielectric layer provided in contact with the resonance element and having a dielectric constant different from that of the dielectric member, and the resonance element and the dielectric layer constitute a resonator. You may.

According to the above first to sixth high frequency devices, the resonance frequency can be varied with a simple structure. Further, even when a superconductor is used as a resonance element, the resonance frequency can be adjusted rapidly and largely without sacrificing the low loss property of the superconductor, and a high-frequency device having a high unloaded Q value is provided. You can

[0045]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Various embodiments according to the present invention will be described below with reference to the drawings.

First, in the high-frequency device according to the present invention, a dielectric layer and an electric conductor layer are appropriately provided on a resonator composed of a resonance element and a substrate composed of a dielectric and a ground layer. The provided first to seventh embodiments will be described.

First, the first embodiment of the high-frequency device according to the present invention will be described with reference to FIG.

FIG. 1 is a sectional view showing a first embodiment of a high frequency device according to the present invention, showing a resonator having a variable resonance frequency. The components for utilizing radio waves used in communication equipment are made up of a wide variety of high frequency devices, and many of them use a resonator. Examples thereof include a filter, an oscillator, a part of a matching circuit, and the like. As for the resonance frequency, narrow loss characteristics can be obtained by reducing the loss as described above, but it becomes difficult to obtain desired characteristics at the time of design. Therefore, a function of adjusting the resonance frequency is required. According to the first embodiment, such a requirement can be easily satisfied.

As shown in FIG. 1, in this high frequency device, a voltage is applied to a resonator having a microstrip line structure in which a resonance element 14 is provided on a substrate 12 having a back surface provided with a ground surface 11. And the electrodes 16 and 18 that apply a voltage.
And an insulating dielectric 15 for insulating the voltage applying element 16 from the resonant element 14, respectively.

The element that determines the resonance frequency is the resonance element 14
(Resonance element length) and the dielectric constant of the dielectric substrate 12. It is difficult to physically change the resonant element length.
As an exception, when a superconductor is used for the resonance element 14, the effective resonance element length can be changed by partially breaking the superconducting characteristics as in the above-mentioned references 1 and 2. The low loss properties of superconductors must be sacrificed.
Therefore, in this embodiment, a dielectric layer 17 having a dielectric constant depending on an electric field and first and second electric conductors formed by sandwiching the dielectric layer 17 from both sides are opposed to the microstrip line resonator. Layers 16 and 18 have been installed. Here, the thickness of the electric conductor layers 16 and 18 is set to be equal to or less than the skin depth δ of the radio wave used for communication represented by the following equation.

[0051]

[Equation 1]

Here, μ is the magnetic permeability, f is the frequency of the radio wave, and σ
Is the conductivity of the conductor.

By thus setting the thickness of the electric conductor layers 16 and 18 to be equal to or less than the skin depth δ, the radio wave penetrates through these conductor layers 16 and 18, so that the radio wave is in a state close to the state without the conductor layers. Can be propagated.

In the first embodiment using such a laminated structure, it is possible to make the dielectric to which a voltage is applied thin. The interdigital electrode structure on the same plane requires the accuracy of the device for forming the pattern, but when the electrodes are laminated, it becomes easy to make the distance between the electrodes narrow. When the distance between the electrodes is narrowed, the voltage per unit length of the dielectric, that is, the electric field strength, can be increased, the voltage of the voltage source from the outside can be lowered, and the change in the dielectric constant can be increased. Can be expected.

Next, a second embodiment of the high frequency device according to the present invention will be described with reference to FIGS.

FIG. 2 is a sectional view showing a second embodiment of the high frequency device according to the present invention.

In the high frequency device of the second embodiment, as shown in FIG. 2, a pair of input / output lines 23 made of a superconductor are resonant with the front surface of a substrate 22 having a ground surface 21 formed on the back surface. The element 24 is formed. this is,
It constitutes a microstripline filter based on a so-called microstripline structure. One end of each of the pair of input / output lines 23 is drawn out to the end of the dielectric substrate 22 in the direction perpendicular to the plane of the drawing.

In order to prevent the voltage application elements 25 and 27 from affecting the electromagnetic field mode of the resonator, the conductor thickness is not more than the skin depth when it is made of a normal conductor, and the conductor thickness when it is made of a superconductor. Is less than the penetration depth of the magnetic field.

The high frequency device of the second embodiment will be described more specifically. The microstrip line type resonator uses MgO or LaA as the substrate 22.
lO ₃ is used. A Y-based superconducting thin film is formed on both surfaces of this substrate by a sputtering method, one surface of the superconducting thin film is used as a ground surface 21, and the other surface of the superconducting thin film is processed by an ion milling method. , The input / output line 23 and the resonance element 2 having a desired resonance frequency (2 GHz in this embodiment)
By forming 4, a microstrip line type filter is manufactured.

On the other hand, the first and second electric conductor layers 25,
As 27, a platinum (Pt) thin film having a thickness of 10 nm, and as a dielectric layer 26 whose permittivity depends on electric field strength,
SrTiO ₃ thin films having a thickness of 500 nm are formed by laminating each on a substrate 28 made of a MgO substrate by a sputtering method, and the thin film is opposed to the resonance element 24 with a Teflon layer (not shown) having a thickness of 1 μm interposed therebetween. Install. First
A variable DC voltage source 29 is connected to the second electric conductor layers 25 and 27.

FIG. 3 shows a variable DC voltage V _b applied between the electric conductor layers 25 and 27 by the variable DC voltage source 29.
The relationship between (V) and the deviation Δf (MHz) of the resonance frequency f of the resonator from the value at V _b = 0 is shown. However, the temperature is 7
The measurement was performed at 7K (hereinafter the same). As is apparent from FIG. 3, Δf monotonically increases with an increase in the absolute value of V _b , and when V _b = 5 V, Δf = 80 MHz (Δf / f = 4
%).

As described above, according to the second embodiment, between the first and second electric conductor layers 25 and 27 formed on both surfaces of the dielectric layer 26 whose permittivity depends on the electric field strength. By changing the applied DC voltage V _b (V) and changing the electric field applied to the dielectric layer 26, the effective permittivity thereof can be controlled (changed). Thereby, the resonance frequency f of the resonance element 24 can be changed in a wide range at high speed.

Next, a third embodiment of the high frequency device according to the present invention will be described with reference to FIG.

FIG. 4 is a sectional view showing the third embodiment of the high-frequency device according to the present invention. In the second embodiment described above, the first and second electric conductor layers 25, 2
7 and the dielectric layer 26 were formed on a substrate different from that of the resonant element 24, but in the third embodiment, they are formed on a common substrate.

First, a microstrip based on a microstrip line structure in which an input / output line 33 made of a superconductor and a resonant element 34 are formed on the surface of a substrate 32 having a ground surface 31 formed on the back surface. A line filter is provided. An SrTiO ₃ thin film having a thickness of 100 nm is formed thereon as an electric insulating layer 35, a Pt thin film having a thickness of 10 nm is formed as a first electric conductor layer 36, and a dielectric layer 37 having a dielectric constant having an electric field dependency is formed thereon. A SrTiO ₃ thin film having a thickness of 500 nm, and a second electric conductor layer 38, which is similar to the first electric conductor layer 36, is formed.
nm Pt thin films are sequentially stacked.

Also in the high frequency device of the third embodiment, the electric conductor layer 3 is formed by the variable DC voltage source 39.
Deviation Delta] f (M from value at Vb = 0 of the resonance frequency f with respect to a variable DC voltage V _b (V) applied between the 6, 38
Regarding the dependence of (Hz), the same characteristic as that of the second embodiment was obtained.

Next, a fourth embodiment of the high frequency device according to the present invention will be described.

In the fourth embodiment, as the dielectric layer 37 whose permittivity depends on the electric field, Ba _x S _1-x T is used.
The configuration is the same as that of the third embodiment described above except that iO ₃ (where x is the amount of Sr replaced by Ba and is 1 or less) is used. By changing x, V _b = 5V and Δ
When f was measured, it was confirmed that the value of Δf increases or decreases depending on x, but in any case, the resonance frequency changes depending on the voltage V _b .

Next, a fifth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS.

FIG. 5 is a sectional view showing a fifth embodiment of the high-frequency device according to the present invention. In the fifth embodiment, first, a microstrip line structure formed by forming an input / output line 43 made of a superconductor and a resonance element 44 on the surface of a substrate 42 having a ground surface 41 formed on the back surface. A microstrip line filter based on is provided. On this, an SrTiO ₃ thin film having a thickness of 100 nm, for example, is formed as an electric insulating layer 45, and a first electric conductor layer 46 having a thickness of 10 n is formed thereon.
m Y-based superconductor thin film, SrTiO ₃ thin film having a thickness of 500 nm as the dielectric layer 47 having a dielectric constant that depends on the electric field,
Further, as the second electric conductor layer 48, a P layer having a thickness of 10 nm is used.
t thin films are sequentially stacked.

That is, the fifth embodiment is basically the same in configuration as the third embodiment described above,
The third embodiment is different from the third embodiment in that the first and second electric conductor layers 46 and 48 provided with the dielectric layer 47 having the electric field strength dependency therebetween are made of different materials. It should be noted that the structure using different materials for the two electric conductor layers provided with the dielectric layers whose permittivity depends on the electric field is sandwiched between the first to fifth embodiments.
It is also possible to combine with the configuration of the embodiment.

FIG. 6 shows the variable DC voltage V _b (V) applied between the electric conductor layers 46 and 48 by the variable DC voltage source 49 and the resonance frequency f of the resonator in the fifth embodiment. The relationship with the deviation Δf (MHz) from the value at V _b = 0 is shown. The thickness of the superconductor thin film, which is the first electric conductor layer 46, of 10 nm is sufficiently smaller than the magnetic field penetration length λ. As can be seen from FIG. 6, the minimum value of Δf is achieved at a voltage value deviating from V _b = 0 by about 1 V, which is about the difference between the work functions of the two types of electric conductors.

As in the fifth embodiment, two kinds of electric conductors having different work functions are used for the first and second electric conductor layers 46, 48, and both electric conductor layers 46, 48
When the resonance frequency is controlled by the applied voltage between them, it is desirable that the change region of the applied voltage does not include the difference between the work functions of the two electric conductors like the region A or the region B of FIG. That is, it is preferable to control so that V _b does not have two values with respect to an arbitrary Δf.

Next, a sixth embodiment of the high frequency device according to the present invention will be described with reference to FIG.

FIG. 7 is a sectional view showing a sixth embodiment of the high-frequency device according to the present invention. In the sixth embodiment, the constituent material of each part is the same as that of the third embodiment, but the voltage application method and the structure of the voltage application electrode with respect to the dielectric layer whose permittivity depends on the electric field are different. ing.

First, as shown in FIG. 7, a microstrip formed by forming an input / output line 53 made of a superconductor and a resonant element 54 on the surface of a substrate 52 having a ground surface 51 formed on the back surface. A microstrip line filter based on a line structure is provided. An electric insulation layer 55 is formed on the microstrip line resonator.
Is formed, and a first electric conductor layer 56, a dielectric layer 57 having a permittivity that depends on an electric field, and a second electric conductor layer 58 are sequentially laminated on this.

Here, the second electric conductor layer 58 is divided into two regions (voltage application regions) 58-1 and 58-2 in the plane, and these two voltage application regions 58-1 and 58-2. A variable DC voltage is applied from the variable DC voltage source 70 between them. A metal mask is used for the second electric conductor layer 58, and the two voltage application regions 58-1 and 58-2 are formed at an interval of 1 mm. A protective film 59 for electrical insulation is provided on the boundary between the voltage application regions 58-1 and 58-2.

In the structure of this embodiment, the first capacitor having the voltage application region 58-1 of one of the first electric conductor layer 56 and the second electric conductor layer 58 as the both-end electrodes, and the first capacitor The electric conductor layer 56 and the second electric conductor layer 58 have a structure in which a second capacitor having the other voltage application region 58-2 as an electrode at both ends is connected in series, and a dielectric layer is formed through these capacitors. An electric field is applied to 57. Also in this case, the resonance frequency f changes depending on the applied voltage _Vb .

As described above, in the sixth embodiment, the voltage application electrode connected to the variable DC voltage source 60 can be installed on the second electric conductor layer 58 on the same plane.
It is not necessary to provide a voltage applying electrode on the electric conductor layer 56. Therefore, there is an advantage that the high frequency device shown in FIG. 7 can be easily manufactured.

Although the second electric conductor layer 58 is divided into a plurality of parts in the sixth embodiment, the same effect can be obtained by dividing the first electric conductor layer 56 into a plurality of parts. it can.

Next, a seventh embodiment of the high frequency device according to the present invention will be described with reference to FIG.

The seventh embodiment has basically the same structure as the above-mentioned first embodiment. That is, a dielectric 67 whose dielectric constant changes by applying a voltage on a resonator having a microstrip line structure in which a resonance element 64 is provided on a dielectric substrate 62 having a back surface with a ground surface 61, and Electrodes 66 and 68 for applying voltage
(68-1 to 68-7) and an insulating dielectric 65 for insulating the voltage applying element 66 from the resonance element 64 are laminated.

However, the seventh embodiment is the same as the first embodiment.
Unlike the embodiment described above, in order to make the dielectric constant of the dielectric layer 67 have a desired distribution, the voltage applying element 68 is separated into a plurality of voltage applying elements 68-1 to 68-7, and further, these voltage applying elements are Different voltages are applied to 68-1 to 68-7. This makes it possible to realize a desired dielectric constant distribution in the dielectric layer 67.
Not only the control of the resonance frequency but also the coupling coefficient between the resonators can be arbitrarily set. The desired dielectric constant distribution means, for example, a distribution that adjusts the characteristics of the filter. Hereinafter, the desired distribution has the same meaning.

As described above, the first dielectric layer and the electric conductor layer are appropriately provided on the resonator formed of the resonance element and the substrate composed of the dielectric and the ground.
In the seventh embodiment, a resonator having a microstripline structure is illustrated as an example, but other resonators such as a stripline structure and a planar structure may be used, and the invention is applied to such a structure. It is possible to

As described above, the first to third aspects of the present invention
According to the seventh embodiment, the resonance frequency can be changed with a simple structure. Further, even when a superconductor is used as a resonance element, the resonance frequency can be adjusted rapidly and largely without sacrificing the low loss property of the superconductor, and a high-frequency device having a high unloaded Q value is provided. You can

Next, a high-frequency device according to the present invention, in which an electric field is applied to the dielectric in the plane direction of the resonance element in order to change the dielectric constant of the dielectric provided near the resonance element Eighth to twenty-fourth embodiments of the high-frequency device having the above will be described.

First, the eighth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 9 (a) and 9 (b).

9A and 9B show a resonator having a variable resonance frequency as a high frequency device according to an eighth embodiment of the present invention.

In the high frequency device of the eighth embodiment, as shown in FIG. 9B, the ground plane 10 is formed on the back surface.
A resonance element 101 made of a superconductor and an input / output line 105 are formed on the surface of a dielectric substrate 103 to which 2 is attached.
It constitutes a microstrip line resonator based on a so-called microstrip line structure.

The element that determines the resonance frequency is the resonance element 10
1 and the dielectric constant of the dielectric substrate 103. It is difficult to physically change the resonant element length. As an exception, when a superconductor is used for the resonance element 101, the effective resonance element length can be changed by partially breaking the superconducting characteristics as in the above-mentioned references 1 and 2. The low loss properties of superconductors must be sacrificed. Therefore, in this embodiment, the dielectric substrate 103 is made of a dielectric material whose permittivity can be changed by the energy applied from the outside, and the permittivity is changed by the external energy 104, whereby the resonant element 101 is formed.
A method of changing the impedance of the element and changing the resonance frequency is applied. Here, as the energy 104 applied to the dielectric substrate 103 from the outside, voltage, light, heat, pressure, magnetic field, or the like can be used.

The present invention can be similarly applied to other transmission line resonator shapes using a dielectric and a conductor. For example, the transmission line shape includes a strip line type and a coplanar type. In the case of the microstrip line resonator of this embodiment, the resonance frequency f is given by the following equation.

[0092]

[Equation 2]

Here, n is a natural number, c is the speed of light, l is the resonant element length, and ε _eff is the effective dielectric constant of the dielectric substrate 103.
When epsilon _eff is changed ± [Delta] [epsilon] _eff, the change in the resonant frequency Δ
f / f is expressed by the following equation (2).

[0094]

[Equation 3]

Actually, when the resonator of 4 GHz band is made with the configuration of FIGS. 9A and 9B and the effective permittivity ε _eff is changed by 20%, the resonance frequency f is variable by 400 MHz. You can

Next, a ninth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS.

FIG. 10 is a sectional view showing a high frequency device according to the ninth embodiment of the present invention. In this embodiment, the microstrip line structure is used as in the eighth embodiment. In this high-frequency device, the resonance element 201 and the voltage application electrode 204 are formed on the front surface of the dielectric substrate 203 having the ground 202 formed on the back surface, and a voltage is applied from the variable voltage source 205 to the electrode 204 to cause dielectric. The configuration is such that the dielectric constant of the body substrate 203 is variable.

According to the ninth embodiment, by forming the voltage applying electrode 204 on the same surface as the surface of the dielectric substrate 203 on which the resonant element 201 and the input / output line (not shown) are formed, Since it can be formed in the same process, cost reduction can be achieved. In the ninth embodiment, a dielectric substrate 203 whose dielectric constant changes with applied voltage is used.

FIG. 11 is a diagram showing a specific example of such a dielectric substrate. The dielectric substrate 301 causes spontaneous branching 304 at the molecular level, and depending on the material, the dielectric substrate 301
When a voltage is applied from the voltage source 303 to the electrodes 302 provided on both side surfaces of the electrode 302 and an external electric field is applied, the quantum of the spontaneous branch 304 changes as shown by a broken line 305, and the dielectric constant changes. According to this method, since the dielectric constant can be changed only by changing the voltage value, the resonance frequency can be changed at high speed. Examples of the dielectric material whose dielectric constant changes with such an applied voltage include SrTiO ₃ and BaTi.
Such as Ba _x Sr _1-x TiO ₃ or PSZT to the O ₃ and group.

As shown in FIG. 10, when the microstrip line structure is applied to the high frequency device, the distance between the resonance element 201 and the application electrode 204 is L.
1 and the resonance element width of the resonance element 201 is L2, it is desirable to satisfy the condition of L1> L2.

Next, the tenth embodiment of the high-frequency device according to the present invention will be described with reference to FIG.

FIG. 12 is a sectional view showing a high-frequency device according to the tenth embodiment of the present invention.
Unlike the ninth embodiment, this is an example of a case where a stripline structure is applied. That is, the ground 402 is formed on both front and back surfaces of the dielectric substrate 403 whose dielectric constant changes according to the applied voltage, and the resonance element 401 and the voltage application electrode 404 are arranged in the same plane inside the dielectric substrate 403. The high frequency device of the tenth embodiment is the same as that of the ninth embodiment except that the entire structure is a stripline structure, and the same effect as that of the ninth embodiment can be obtained.

Next, an eleventh embodiment of the high frequency device according to the present invention will be described with reference to FIGS. 13 (a) and 13 (b).

FIGS. 13A and 13B are views showing a high frequency device according to an eleventh embodiment of the present invention, in which the surface of the dielectric substrate 502 having the ground 501 formed on the back surface is shown. The resonance element 504 and the voltage application electrode 50
3 and the input / output line 505 are formed into a microstrip line structure, and further, the resonance element 504, the voltage application electrode 503, and a part of the input / output line 505 are covered.
It has a configuration in which a dielectric layer 506 whose dielectric constant changes according to an applied voltage is provided. A variable voltage source 507 that generates a DC voltage is connected to the voltage application electrode 503.

In the eleventh embodiment, the resonance element 50 is used.
This is effective when 4 is formed of a superconductor. When forming a superconducting thin film having excellent characteristics as the resonance element 504 on the dielectric substrate 502, it is necessary to use a dielectric material having a lattice constant close to that of a superconductor for the dielectric substrate 502. If a superconductor is formed on a substrate having a different lattice constant, distortion occurs in the path through which the superconducting current passes, and the characteristics deteriorate. If there is no dielectric material that satisfies the conditions that the lattice constant is close to that of the superconductor used for the resonant element 504 and the condition that the permittivity changes with the applied voltage, there is no dielectric material used for the dielectric substrate 502. The resonant element 504 is formed on the dielectric substrate 502 having a relative permittivity ε _r and a lattice constant close to that of a superconductor as in the above embodiment. Then, a dielectric layer 506 made of a dielectric material having a relative permittivity ε _r ′ different from the relative permittivity ε _{r of the} dielectric substrate 502 and changing with an applied voltage is formed by sputtering or the like.

As described above, in the eleventh embodiment,
In a high frequency device having a structure in which the resonance element 504 is formed of a superconductor, the resonance element 504 is formed on the resonance element 504 by changing the voltage applied from the variable voltage source 507 to the dielectric layer 506 through the voltage application electrode 503. The dielectric constant of the dielectric layer 506 can be changed to change the impedance of the resonance element 504, and the resonance characteristics such as the resonance frequency can be changed.

Further, according to the eleventh embodiment, the resonance characteristics can be changed without destroying the superconducting characteristics of the superconductor as in the above-mentioned references 1 and 2, so that the superconducting characteristics can be destroyed. It is not necessary to use a large-scale magnetic field generation source that generates a strong magnetic field or a heating element that has a problem in operating speed, and sacrifices the low loss property of the superconductor because it does not destroy the superconducting property. It has the advantage of never happening.

Next, a twelfth embodiment of the high-frequency device according to the present invention will be described with reference to FIG.

FIG. 14 is a sectional view showing a high frequency device according to the twelfth embodiment of the present invention. Dielectric substrate 60 with relative permittivity ε _r having ground 601 formed on the back surface
A resonance element 604 made of a superconductor is formed on the surface 2 to form a microstrip line structure. Also the first
Similar to the first embodiment, the substrate 602 is made of a material whose lattice constant is close to that of the superconductor of the resonant element 604. A dielectric layer 606 whose relative dielectric constant ε _r ′ (ε _r ′ ≠ ε _r ) changes according to an applied voltage is provided on the dielectric substrate 602 via a spacer 605 having a thickness larger than that of the resonant element 604, A voltage application electrode 603 is formed on the dielectric layer 606. A variable voltage source 607 that generates a DC voltage is connected to the voltage applying electrode 603.

In general, the dielectric material used for the dielectric layer 606 whose dielectric constant changes with applied voltage has a larger loss than other materials. In this case, the unloaded Q value of the resonator is determined according to the magnitude of loss in the dielectric layer 606.
Therefore, in the twelfth embodiment, the spacer 605 is used to float the dielectric layer 606 from the resonant element 604, thereby reducing the loss contribution of the dielectric layer 606 to the resonator and realizing a high unloaded Q value. To do. In this case, FIG.
, A voltage application electrode 603 is provided on the dielectric layer 606, and a variable voltage source 7 for generating a DC voltage is applied to the voltage application electrode 603.
06 is connected.

As described above, according to the twelfth embodiment,
By changing the dielectric constant of the dielectric layer 606 according to the applied voltage, a large-scale magnetic field generation source that generates a strong magnetic field for destroying the superconducting characteristics and a problem in terms of operating speed are obtained as in the eleventh embodiment. It is possible to change the impedance of the resonance element 604 and change the resonance characteristics such as the resonance frequency without using a heating element and without impairing the superconducting characteristics.

Next, a thirteenth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 15 (a) and 15 (b).

FIGS. 15A and 15B are views showing a high frequency device according to the thirteenth embodiment of the present invention. In the thirteenth embodiment, an input / output line 703 and a large number of resonance elements 704 are formed on a dielectric substrate 702 having a ground 701 formed on the back surface to form a microstrip line structure, and a dielectric constant is applied by an applied voltage. A multi-stage filter is constructed by providing a dielectric layer 705 having a variable rate ε '.

In the high frequency device having such a configuration, in order to adjust the resonance frequency and the filter characteristic of each resonance element, it is necessary to adjust the coupling coefficient between the resonance elements and the coupling amount of the external Q in addition to the resonance element length. is there. When trying to adjust all adjustment points, the number of filter stages (resonance element 704
If n is the number of points), it is necessary to adjust 2n + 1 points. Therefore, in this embodiment, a dielectric layer 705 is individually provided in each stage of the filter, and a DC voltage is supplied from the variable voltage source 706 via a voltage applying electrode (not shown) provided at each end of each dielectric layer 705. By applying a voltage, the effective resonance length, the coupling coefficient between the resonant elements, and the coupling amount of the external Q are changed. As a result, the resonance frequency and the filter characteristics can be easily adjusted to desired characteristics.

Next, a fourteenth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 16 (a) and 16 (b).

FIGS. 16A and 16B show a high frequency device according to the fourteenth embodiment of the present invention, in which a thin line portion and a thick line portion having a gap are formed on a dielectric substrate 802. 2 shows a resonator in which the resonant element 801 is formed. The resonance element 801 has an input / output line 8
04 is connected. In this case, the resonance element 801 resonates at a frequency f _o of the following equation due to the inductance L of the thin line portion and the capacitance C due to the gap of the thick line portion.

[0117]

[Equation 4]

However, it is necessary to design the accurate value in consideration of parasitic components such as loss and parasitic capacitance.

Further, on the gap portion of the resonance element 801, a dielectric layer 803 whose permittivity changes according to an applied voltage.
Is provided. A voltage application electrode 806 for applying a DC voltage from the variable voltage source 805 is formed on the dielectric layer 803. This electrode 806 is shown in FIG.
As shown in (b), the line width is formed to be sufficiently thin so that the line is set to have a high impedance when viewed from the propagating radio wave. This makes it possible to maintain a high no-load Q value without leaking radio wave energy. Further, from the variable voltage source 805 to the dielectric layer 8
By changing the voltage applied to the resonance element 80.
The resonance frequency f _o is made variable by changing the capacitance C due to the gap of 1. The dielectric substrate 802
The method of this embodiment can also be applied to a microstrip line structure in which a ground is formed on the back surface of the.

Next, a fifteenth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 17 (a) and 17 (b).

FIGS. 17A and 17B show a resonator capable of lowering the resonance frequency as the high frequency device according to the fifteenth embodiment. In the fifteenth embodiment, similarly to the fourteenth embodiment, a resonant element 901 composed of a thin line portion and a thick line portion having a gap is formed on a dielectric substrate 902, and the resonant element 901 is inserted into the resonant element 901. A dielectric layer 903, whose dielectric constant changes according to an applied voltage, is provided on the gap portion of the resonant element 901 while connecting the output line 904.
Further, the dielectric layer 903 is provided with a voltage application electrode 906 for applying a voltage from the variable voltage source 905.

In this embodiment, the voltage applying electrode 90 is used.
By making the electrode shape of the resonator element 901 above the gap portion of the resonance element 901 into a comb shape, the facing area of the gap is increased. In this way, the capacitance C due to the gap of the resonance element 901 can be increased, so that the resonance frequency f can be obtained as is clear from the above equation (3).
_o can be lowered. The voltage application electrode 906
May have a structure different from that of the conductor of the resonance element 901. The method of this embodiment can also be applied to a microstrip line structure in which a ground is formed on the back surface of the dielectric substrate 902.

Next, a sixteenth embodiment of the high-frequency device according to this invention will be described with reference to FIGS. 18 (a) and 18 (b).

18 (a) and 18 (b) show a high frequency device according to the sixteenth embodiment of the present invention.
A plurality of resonance elements 1001 configured by the inductance of the thin line and the capacitance of the gap of the thick line described in the fourteenth embodiment (see FIG. 18).
In the example of (a) and FIG. 18 (b), two filters are shown arranged side by side. An input / output line 1004 is connected to the resonance element 1001. A dielectric layer 10 whose permittivity changes according to an applied voltage is provided on each gap part of the resonance element 1001 and on the gap part between the resonance elements 1001.
03 is provided on the dielectric layer 1003 to apply DC voltage V1, V2, V3 from the variable voltage source 1005 corresponding to each gap portion.
006 is provided. These applied voltages V1 and V
By changing V2 and V3 individually, the resonance element 100
The capacitance C due to the gap of 1 can be changed to change the resonance frequency and the coupling coefficient between the resonance elements. Also, when the external Q needs to be adjusted, the adjustment can be performed by changing the applied voltages V1, V2 and V3 in the same manner.

Next, a seventeenth embodiment of the high-frequency device according to this invention will be described with reference to FIG.

FIG. 19 is a diagram showing a high frequency device according to a seventeenth embodiment of the invention, showing a high frequency device configured such that each variable item can be adjusted at once by one variable voltage source 1105. . In this high frequency device, a resonant element 1101 having a plurality of gaps is formed on a dielectric substrate 1102, and an input / output line 1104 is formed.
And a dielectric layer 1103 whose permittivity is changed by an applied voltage is provided on the resonant element 1101.
Voltage applying electrodes 1106 are provided on the dielectric layer 1103 so as to correspond to the respective gaps of the resonant element 1101. Further, one variable voltage source 1105 is commonly connected to the voltage applying electrode 1106. In this case, the degree of variability is adjusted by changing the intervals W1, W2, W3 of the voltage application electrodes 1106 or the width of the voltage application electrodes 1106, and thereby the permittivity distribution of the dielectric layer 1103 is made to have a desired characteristic. Can be adjusted to fit.

Next, an eighteenth embodiment of the high-frequency device according to this invention will be described with reference to FIG.

FIG. 20 is a diagram showing a high frequency device according to the eighteenth embodiment of the present invention. As in the seventeenth embodiment, each variable item is adjusted at once by one variable voltage source 1205. It is configured to be able to. However, unlike the seventeenth embodiment, the electrode width of the voltage application individual electrode 1206 is made constant, and the dielectric layer 1203 is formed.
By providing a distribution in the thickness of the film, it is configured to realize a desired dielectric constant distribution.

That is, in the eighteenth embodiment, the resonant element 1201 having a plurality of gaps is formed on the dielectric substrate 1202 to connect the input / output line 1204, and the resonant element 1201 is dielectrically affected by the applied voltage. A dielectric layer 1203 of varying index is provided, the dielectric layer 1
A voltage applying electrode 1206 having the same electrode width is provided on the 203 corresponding to each gap of the resonant element 1201, and one variable voltage source 1205 is commonly connected to the voltage applying electrode 1206. This point is
This is the same as the seventh embodiment, but in the eighteenth embodiment, the thickness of the dielectric layer 1203 is different at each gap position. Thereby, the dielectric constant distribution of the dielectric layer 1203 can be adjusted to meet desired characteristics.

Next, a nineteenth embodiment of the high-frequency device according to this invention will be described with reference to FIG.

FIG. 21 is a diagram showing a high frequency device according to the nineteenth embodiment of the present invention. In this high-frequency device, a voltage is applied to each voltage application electrode 1306 from one common variable voltage source 1305 via a variable resistor 1308 or a resistor 1309, and the applied voltage is varied by the variable resistor 1308 to obtain a desired voltage. It is configured to create a voltage distribution.

That is, in the nineteenth embodiment,
A resonant element 1301 having a plurality of gaps and an input / output line 1304 are provided on a dielectric substrate 1302, and a dielectric layer 1303 whose permittivity changes according to an applied voltage is provided on the resonant element 1301. Thirteen
03, a voltage application electrode 1306 is provided corresponding to each gap of the resonance element 1301, and a variable voltage source 1305 is connected to the voltage application electrode 1306 via a variable resistor 1308 or a resistor 1309. . By doing so, the dielectric constant distribution of the dielectric layer 1303 can be adjusted to meet the desired characteristics.

In addition, in order to change the applied voltage, other passive elements such as an inductance element and a capacitance element may be used in addition to the resistance, or a circuit using an active element may be used.

Next, a twentieth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 22 (a) and 22 (b).

22 (a) and 22 (b) are views showing a high frequency device according to the twentieth embodiment of the present invention. In the twentieth embodiment, the resonance element 1401 and the input / output line 1404 are provided on the dielectric substrate 1402 having the ground 1407 formed on the back surface, and the dielectric constant changes depending on the applied voltage on the resonance element 1401. A dielectric layer 1403 is provided, and the variable voltage source 140 is provided on the voltage applying electrode 1406 provided on the dielectric layer 1403.
In a high frequency device configured to apply a DC voltage from 5 to change the dielectric constant of the dielectric layer 1403,
The thickness of the voltage application electrode 1406 is set to be equal to or less than the skin depth δ of the radio wave at the operating frequency of the high frequency device. The skin depth δ is expressed by the following equation (4).

[0136]

[Equation 5]

Here, f is the operating frequency of the high frequency device (frequency of radio wave used for communication), μ is the magnetic permeability, and σ is the conductivity of the voltage applying electrode.

By thus setting the thickness of the voltage applying electrode 1406 to be equal to or less than the skin depth δ, the radio wave itself is transmitted to the electrode 140.
Since it penetrates through the conductor of No. 6, the radio wave can be propagated in a low loss state similar to the case without the electrode 1406.

Next, a twenty-first embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 23 (a) and 23 (b).

23 (a) and 23 (b) are views showing a high frequency device according to a twenty-first embodiment of the present invention. In the twenty-first embodiment, the ground 1 is provided on the back surface.
The resonant element 1 is formed on the dielectric substrate 1502 on which 507 is formed.
A high-frequency device having a microstrip line structure in which 501 and an input / output line 1504 are formed. A dielectric layer 1503 whose permittivity changes according to an applied voltage is provided on a resonance element 1501, and the dielectric layer 1503 is formed on the dielectric layer 1503. Comb shape (interdigital type) with a skin depth less than or equal to δ
The voltage application electrode 1506 of
6, a variable voltage source 1505 is connected.

According to this embodiment, the same effect as that of the twentieth embodiment can be obtained. Further, in the configuration of the twenty-first embodiment, the dielectric constant is distributed by locally applying voltage to the dielectric layer 1503 from a number of points via the comb-shaped (interdigital) voltage application electrode 1506. It is effective when changing.

Next, a twenty-second embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 24 (a) and 24 (b).

24 (a) and 24 (b) are views showing a high frequency device according to the 22nd embodiment of the invention. In the twenty-second embodiment, in a high frequency device having a microstrip line structure in which a resonance element 1601 and an input / output line 1604 are formed on a dielectric substrate 1602 having a ground 1607 formed on the back surface, a voltage is applied on the resonance element 1601. A dielectric layer 1603 whose permittivity changes according to a voltage is provided, and a comb-shaped (interdigital shape) voltage having a thickness equal to or less than the skin depth δ represented by the formula (4) is applied on the dielectric layer 1603. An electrode 1606 is formed, and a variable voltage source 1605 is connected to this electrode 1606. In the twenty-second embodiment, FIG.
As shown in (b), the comb-shaped electrode on the resonance element 1601 is modified as compared with that of the twenty-first embodiment.

According to the twenty-second embodiment, the twentieth embodiment
In addition to obtaining the same effect as in the above embodiment, the dielectric constant distribution of the dielectric layer 1603 can be set to a desired distribution by changing the shape or electrode width of the comb-shaped (interdigital shape) voltage application electrode 1606. There is an advantage.

Next, a twenty-third embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 25 (a) and 25 (b).

25 (a) and 25 (b) are views showing a high frequency device according to the 23rd embodiment of the invention. In the twenty-third embodiment, in the high frequency device of the microstrip line structure in which the resonance element 1701 and the input / output line 1704 are formed on the dielectric substrate 1702 having the ground 1707 formed on the back surface, the resonance element 1701 is formed on the resonance element 1701. A dielectric layer 1703 whose permittivity changes according to an applied voltage is provided, and a comb-shaped (interdigital shape) voltage application electrode 1706 having a thickness equal to or less than the skin depth δ shown in the formula (4) is provided thereon. Has been formed. Further, a plurality of variable voltage sources 1705 are connected to the electrode 1706, and are configured to have a plurality of positions for changing the dielectric constant of the dielectric layer 1703. This second
According to the third embodiment, the same effect as that of the twentieth embodiment can be obtained.

Next, FIG. 26A and FIG. 26 show the twenty-fourth embodiment of the high-frequency device according to the present invention.
This will be described with reference to (b).

26 (a) and 26 (b) are views showing a high frequency device according to the twenty-fourth embodiment of the present invention. In the twenty-fourth embodiment, in a high frequency device having a microstrip line structure in which a plurality of resonance elements 1801 and input / output lines 1804 are formed on a dielectric substrate 1802 having a ground 1807 formed on the back surface,
A dielectric layer 1803 whose permittivity changes according to an applied voltage is provided on the resonance element 1801, and the dielectric layer 1803 is formed on the dielectric layer 1803.
In this example, a comb-shaped (interdigital shape) voltage application electrode 1806 having a conductor thickness equal to or less than the skin depth δ shown in FIG. 3 is formed, and a variable voltage source 1805 is connected to this electrode to realize a filter. Also in the twenty-fourth embodiment, the same effect as in the twentieth embodiment can be obtained.

Next, a twenty-fifth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS.

FIG. 27 (a) shows the relationship between the resonance element and the electrode on the surface of the high frequency device of the twenty-fifth embodiment on which the resonance element is provided, and FIG. 27 (b) shows the cross section of the high frequency device. The figure is shown. The resonator is ground 1901
And a microstrip line structure including a general dielectric 1902 and a resonance element 1903. In the twenty-fifth embodiment, a dielectric 1 whose permittivity changes by applying a voltage on this resonator on this resonator 1
An electrode 1905 for applying a voltage is provided on a surface different from that of 904 and its resonance element, and the voltage application element 1905 has an interdigital shape. Reference numeral 1906 indicates an input / output element.

[0151] As shown in FIG. 27 (a), the vertical direction of the skewer of the voltage application element 190 5 to the resonance direction of the resonator 1903, further at a distance of more than 2 times the width of the resonator element The skew of each electrode is composed so that it can be supplied from one power source. Thus, the direction of the skewer of the voltage application element 190 5, the resonator of the resonance element 190
By perpendicular to the third resonance direction, the voltage application device 190 from the coupling of the electromagnetic field of the voltage application device 190 5 is reduced to the mode of an electromagnetic field resonating of the resonant element
The effect of 5 becomes small.

When this twenty-fifth embodiment is applied to a filter, an example applied to a side coupled filter is shown in FIG. 28, and an example applied to an end coupled filter is shown in FIG.
9 shows. Here, 2001 and 2101 are resonance elements,
Reference numerals 2002 and 2102 denote voltage applying elements.
Reference numeral 03 is an input / output element, and 2004 and 2104 are voltage sources.

The high frequency device of the twenty-fifth embodiment can be modified in various ways. For example, FIG.
An electrode may be formed between the resonant element and the ground as shown in FIG.

That is, the interdigital electrode 2202 as described above is provided on the dielectric 2204 provided on the ground 2205, and these dielectrics 2204 are also provided.
A dielectric 2203 whose permittivity changes with voltage is provided on the voltage applying element 2202. Resonant element 22
01 and the input / output terminal 2206 are provided on the dielectric 2203. With such a configuration, the same effect as that of the 25th embodiment described above can be obtained.

Further, as shown in FIG. 31, the dielectric is laminated only on a necessary portion of the resonant element, and the piezoelectric applying element provided inside is supplied with a voltage from an external voltage source from the portion where the dielectric is not laminated. You may do it.

That is, the voltage applying element 2302 is provided on the dielectric 2304 provided on the ground 2305, and the dielectric 2303 whose permittivity changes according to the voltage is further provided on the voltage applying element 2302. Are provided to hold the. Resonant element 230
1 is provided on the dielectric 2303. An external voltage source 2306 is connected to a portion of the voltage applying element 2302 provided on the dielectric 2304, where the dielectric 2304 is not provided. With such a configuration, the same effect as that of the 25th embodiment described above can be obtained.

As described above, according to the eighth to eighth aspects of the present invention.
According to the twenty-fifth embodiment, the resonance frequency can be changed with a simple structure. Further, even when a superconductor is used as a resonance element, the resonance frequency can be adjusted rapidly and largely without sacrificing the low loss property of the superconductor, and a high-frequency device having a high unloaded Q value is provided. You can

Next, a further embodiment of the high-frequency device according to the present invention will be described with reference to the drawings.

A twenty-sixth embodiment of the high-frequency device according to this invention will be described with reference to FIG.

FIG. 32 shows a high frequency device according to the 26th embodiment of the invention. The twenty-sixth embodiment has a configuration similar to that of the twenty-fifth embodiment. However, unlike the 25th embodiment described above,
A superconducting ground layer, which is a component of the resonator, is divided into a plurality of grounds and is provided on the lower surface of the dielectric layer.
Further, electrodes are provided between the plurality of grounds, respectively, so that the grounds and the electrodes are alternately formed on the lower surface of the dielectric layer.

More specifically, a resonant element 2401 is provided on the dielectric 2402.
The ground 2403 and the electrode (voltage applying element) 2404 described above are provided below the portion 402. The ground 2403 and the electrode (voltage applying element) 2404 are in a superconducting state. As shown in FIG. 32, the ground 24
03 is grounded, and a predetermined voltage is applied to the electrode 2404. As a result, the dielectric constant of the dielectric layer 2402 can be changed, and thus the resonance frequency of the resonant element 2401 can be made variable.

As described above, according to the twenty-sixth embodiment in which the dielectric constant of the dielectric member provided close to the resonance element is changed by the voltage, the resonance characteristic can be changed with a simple structure, and the resonance element can be changed. When a superconductor is used for the above, the low loss property of the superconductor is not sacrificed and the unloaded Q
A high-frequency device with high value can be provided.

Next, various embodiments of the high frequency device according to the present invention, in which the resonance frequency is controlled by using light or heat, will be described.

First, a twenty-seventh embodiment of the high-frequency device according to the present invention will be described with reference to FIG.

In the twenty-seventh embodiment, the resonator is composed of a resonance element 3001, a ground 3002, and a dielectric 3003 whose permittivity changes by light,
It constitutes a microstrip line resonator. When light is applied to the dielectric from the outside, the dielectric constant of the dielectric changes depending on the intensity of the light. As a result, the impedance of the resonator and the effective resonator length can be varied, so that the resonance frequency can be changed. Examples of materials whose dielectric constant changes with light include BaTiO ₃ , LiNbO, and LiT.
aO ₃ etc.

Next, a twenty-eighth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 34 (a) and 34 (b).

34 (a) and 34 (b) are views showing a high frequency device according to the twenty-eighth embodiment of the present invention, in which the frequency is variable by using a dielectric whose permittivity changes by light. Is an example.

That is, in the twenty-eighth embodiment,
A resonant element 3101 and an input / output line 3104 are provided on a dielectric substrate 3102, and a dielectric layer 3103 whose permittivity is changed by light 3105 is formed thereon. In this case, the dielectric constant distribution of the dielectric layer 3103 is desired by irradiating the portion for changing the impedance of the resonant element 3101 (shown by a broken line) and the other portion for adjusting the coupling amount with light 3105 having different light amounts. Therefore, the resonance frequency of the resonance element 3101 can be made variable.

Next, a twenty-ninth embodiment of the high-frequency device according to the present invention will be described with reference to FIGS. 35 (a) and 35 (b).

35 (a) and 35 (b) are views showing a high frequency device according to the twenty-ninth embodiment of the present invention. This twenty-ninth embodiment uses a dielectric whose permittivity changes by light as in the twenty-eighth embodiment, but the irradiation light is made uniform in intensity, and the thickness of the dielectric is changed. By varying the effective light intensity, a desired dielectric constant distribution is realized.

That is, the resonance element 3201 and the input / output line 3204 are provided on the dielectric substrate 3202, and the light 3
A dielectric layer 3203 whose dielectric constant changes by 205 is formed. In this case, the dielectric constant distribution of the dielectric layer 3203 can be set to a desired distribution by a certain amount of light with which a predetermined thickness distribution is irradiated, and thus the resonant element 3201.
The resonance frequency of can be made variable.

As a modification of the above-mentioned twenty-eighth and twenty-ninth embodiments, a dielectric whose permittivity changes due to factors other than light such as heat may be used.

Next, with reference to FIG. 36, a thirtieth embodiment of the high-frequency device according to the present invention will be described.

FIG. 36 is a sectional view showing a high-frequency device according to the thirtieth embodiment of the present invention. This 30th
In the embodiment, a resonance element 3303 made of a superconductor is formed on a dielectric substrate 3302 having a relative permittivity ε _r and a ground surface 3301 formed on the back surface to form a microstrip line structure. Similar to the twelfth embodiment, the superconductor of the resonance element 3303 is made of a material having a lattice constant close to that of the dielectric substrate 3302.
Then, the resonant element 330 having a thickness on the dielectric substrate 3302 is formed.
A dielectric layer 3304 having a relative permittivity ε _r ′ (ε _r ′ ≠ ε _r ) which is changed by heat is provided through a spacer 3305 larger than that of No. 3, and a heating element is provided on the dielectric layer 3304. 3307 is added, and the heating element 3307 is energized from the current source 3306.

Here, as the dielectric layer 3304, a dielectric material whose permittivity changes by heat is used. As an example,
The dielectric layer 3304 is a material having a large temperature change rate of the dielectric constant at the operating temperature, and is a kind of high-dielectric material SrTiO ₃
Etc. can be used. Then, this dielectric layer 33
The resonance frequency is adjusted by changing the dielectric constant of 04 with the heat of the heating element 3307. At this time, the spacer 3305 is used to prevent the heat of the dielectric layer 3304 from being transferred to the resonant element 3303 made of a superconductor.
By floating 04, the resonance frequency can be changed without impairing the superconducting property. In this case, the spacer 3305 is formed in a ring shape to form the spacer 330.
It is desirable that the space surrounding the resonance element 3303 surrounded by 5 be made into a vacuum state and that the spacer 3305 be made of a material capable of heat shielding.

As described above, according to the thirtieth embodiment, by changing the dielectric constant of the dielectric layer 3304 by heat, a large-scale magnetic field generation source for generating a strong magnetic field is used in order to destroy the superconducting property. It is possible to change the impedance of the resonance element 3303 without changing the resonance characteristics such as the resonance frequency without damaging the superconducting characteristics.

As described above, according to the present invention, it is possible to achieve a simple operation by changing the permittivity of the dielectric member provided close to the resonant element by heat or light. It is possible to provide a high-frequency device having a variable resonance characteristic with a configuration and without sacrificing the low loss property of the superconductor when a superconductor is used for the resonance element and having a high unloaded Q value.

[0178]

As described above in detail, according to the high frequency device of the present invention, the resonance frequency can be changed with a simple structure. Further, even when a superconductor is used as a resonance element, the resonance frequency can be adjusted rapidly and largely without sacrificing the low loss property of the superconductor, and a high-frequency device having a high unloaded Q value is provided. You can

[Brief description of drawings]

FIG. 1 is a sectional view showing the configuration of a first embodiment of a high-frequency device according to the present invention.

FIG. 2 is a sectional view showing the configuration of a second embodiment of a high-frequency device according to the present invention.

FIG. 3 is a diagram showing a relationship between an applied voltage V _b and a change amount Δf of a resonance frequency f in the high frequency device of the second embodiment shown in FIG. 2;

FIG. 4 is a third and fourth high frequency device according to the present invention.
3 is a cross-sectional view showing the configuration of the embodiment of FIG.

FIG. 5 is a cross-sectional view showing a configuration of a fifth embodiment of a high-frequency device according to the present invention, to which different electric conductors are applied.

FIG. 6 is a diagram showing a relationship between an applied voltage V _b and a change amount Δf of a resonance frequency f in the high frequency device of the fifth embodiment shown in FIG. 5;

FIG. 7 is a cross-sectional view showing a configuration of a sixth embodiment of the high-frequency device according to the present invention, in which voltage application regions are separated.

FIG. 8 is a cross-sectional view showing the configuration of a seventh embodiment of the high-frequency device according to the present invention, in which the dielectric constant has a distribution.

FIG. 9 is a diagram showing a configuration of an eighth embodiment of the high-frequency device according to the present invention, in which the dielectric constant is controlled by the supply of external energy.

FIG. 10 is a cross-sectional view showing the configuration of a ninth embodiment of the high-frequency device according to the present invention, in which the dielectric constant is controlled by applying a voltage.

FIG. 11 is a view for explaining an example of a dielectric material whose permittivity changes according to an applied voltage in the ninth embodiment shown in FIG.

FIG. 12 is a cross-sectional view showing the configuration of a tenth embodiment of the high-frequency device according to the present invention, to which a stripline structure is applied.

FIG. 13 is a diagram showing a configuration of an eleventh embodiment of the high-frequency device according to the present invention, in which a dielectric layer is formed on a resonator having a microstrip line structure.

FIG. 14 is a cross-sectional view showing the configuration of a twelfth embodiment of the high-frequency device according to the present invention, in which a dielectric layer is formed on a resonator by using a spacer.

FIG. 15 is a diagram showing a configuration of a thirteenth embodiment which is a high-frequency device according to the present invention and constitutes a multistage filter using a plurality of resonance elements.

FIG. 16 is a diagram showing a configuration of a fourteenth embodiment, which is a high-frequency device according to the present invention and in which a resonance element is provided with a gap.

FIG. 17 is a diagram showing a configuration of a fifteenth embodiment of the high-frequency device according to the present invention, in which a resonance element is provided with a gap.

FIG. 18 is a diagram showing the configuration of a sixteenth embodiment of a high-frequency device according to the present invention, in which a plurality of resonant elements shown in FIG. 16 are provided to form a filter.

FIG. 19 is a cross-sectional view showing the configuration of a seventeenth embodiment of the high-frequency device according to the present invention, in which the distance between electrodes is controlled.

FIG. 20 is a cross-sectional view showing the configuration of the eighteenth embodiment of the high-frequency device according to the present invention, in which the thickness of the dielectric layer provided on the resonator is adjusted.

FIG. 21 is a cross-sectional view showing the configuration of a nineteenth embodiment, which is a high-frequency device according to the present invention, in which an applied voltage is controlled by a resistor.

FIG. 22 is a diagram showing the configuration of a twentieth embodiment of the high-frequency device according to the present invention, in which the electrode thickness is the skin depth δ.

FIG. 23 is a diagram showing a configuration of a twenty-first embodiment, which is a high-frequency device according to the present invention, in which an electrode has a thickness of δ or less and which is provided in a comb tooth shape.

FIG. 24 is a diagram showing the structure of a twenty-second embodiment of the high-frequency device according to the present invention, in which the electrode shape on the resonant element is modified as compared with the twenty-first embodiment.

FIG. 25 is a diagram showing a configuration of a twenty-third embodiment which is a high-frequency device according to the present invention and is configured to apply different voltages as compared with the twenty-first embodiment.

FIG. 26 is a diagram showing a configuration of a twenty-fourth embodiment which is a high-frequency device according to the present invention and which is a filter provided with a plurality of resonant elements as compared with the twenty-first embodiment.

FIG. 27 is a high-frequency device according to the present invention, in which the electrode has a comb-shaped (interdigital) shape, 25th.
The figure which shows the structure of embodiment of FIG.

FIG. 28 is a diagram showing a configuration in which the device of the twenty-fifth embodiment is applied to a side coupled filter.

FIG. 29 is a diagram showing a configuration in which the device of the twenty-fifth embodiment is applied to an end coupled filter.

FIG. 30 is a diagram showing a configuration of a first modified example of the twenty-fifth embodiment.

FIG. 31 is a diagram showing the configuration of a second modification of the twenty-fifth embodiment.

FIG. 32 is a sectional view showing the structure of a twenty sixth embodiment of a high frequency device according to the present invention.

FIG. 33 is a sectional view showing the configuration of a twenty-seventh embodiment of the high-frequency device according to this invention.

FIG. 34 is a diagram showing the configuration of the twenty-eighth embodiment of the high-frequency device according to the present invention.

FIG. 35 is a diagram showing the configuration of a twenty-ninth embodiment of a high-frequency device according to the present invention.

FIG. 36 is a cross-sectional view showing the configuration of a thirtieth embodiment which is a high-frequency device according to the present invention and is configured to control the device of the twelfth embodiment by heat.

[Explanation of symbols]

11, 21, 31, 41, 51, 61, 102, 20
2,402,501,601,701,1407,16
07,1707,1807,1901,205,23
05, 2403, 3002, 3107, 3207, 33
01 ... Ground (surface), 12, 22, 28, 32, 42, 52 ... Substrate, 14, 24, 34, 44, 54, 64, 101, 40
1,504,604,704,801,901,100
1,1101,1201,1301,1401,150
1,1601,1701,1801,1903,200
1,210,221,230,1,240,300
1, 3101, 3201, 3303 ... Resonant element, 15, 35, 45, 55, 65 ... Insulating dielectric layer, 16, 18, 204, 302, 404, 503, 60
3,806,906,1006,1106,1206
1306, 1406, 1506, 1606, 1706
1806, 1905, 2002, 2102, 2202
2302, 2404 ... Electrodes (voltage applying elements), 17, 1902, 1904, 2203, 2204, 23
03, 2304, 2402, 3003 ... Dielectric material, 19, 29, 39, 49, 60, 205, 303, 40
5,507,805,905,1005,1105,1
205, 1305, 1405, 1505, 1605, 1
705, 1805, 2004, 2104, 2306 ... Variable DC voltage source, 23, 33, 43, 53, 105, 505, 703, 8
04,904,1004,1104,1204,130
4,1404,1504,1604,1704,180
4,1906,2003,2103,2206,310
4, 3204 ... I / O lines (elements, terminals), 25, 27, 36, 38, 46, 48, 56, 58 (5
8-1 to 58-2), 66, 68 ... Electric conductor layer, 26, 37, 47, 57, 67, 506, 705, 80
3,903,1003,1103,1203,130
3,1403,1503,1603,1703,180
3, 3103, 3203, 3304 ... Dielectric layer, 59 ... Protective film, 103, 203, 301, 403, 502, 602, 7
02,802,902,1002,1102,120
2,1302,1402,1502,1602,170
2, 1802, 3102, 3202, 3302 ... Dielectric substrate, 104 ... External energy, 304 ... Quantum, 605, 3305 ... Spacer, 1308 ... Variable resistance, 1309 ... Resistor, 3105, 3205 ... Light 3306 ... Current source 3307 ... Heat generation body.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hisashi Yoshino 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Toshiba Research & Development Center Co., Ltd. (56) Reference JP-A-1-238306 (JP, A) Kaihei 4-368006 (JP, A) JP 63-128618 (JP, A) JP 8-46253 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01P 1 / 20-1/219 H01P 7/00-7/10

Claims (11)

(57) [Claims] 1. A plate-shaped resonance element made of a superconductor, a dielectric member provided in the vicinity of the resonance element and having a permittivity changing in accordance with an applied electric field, and provided in proximity to the dielectric member. A plurality of electrodes that apply an electric field to the dielectric member along the plate surface of the resonant element; and a supply unit that supplies energy to the plurality of electrodes so that a desired dielectric constant is generated in the dielectric member. A high-frequency device characterized by being provided. 2. The high frequency device according to claim 1, wherein the thickness of the plurality of electrodes is less than or equal to the skin depth of radio waves of a predetermined frequency. 3. The high-frequency device according to claim 1, wherein the plurality of electrodes are made of a superconductor and have a thickness not more than a magnetic field penetration length. 4. The high frequency device according to claim 1, wherein the plurality of electrodes are arranged in a longitudinal direction of the resonant element. 5. The high frequency device according to claim 1, wherein a resonant circuit is constituted by the resonant element and the dielectric member. 6. When the width of the resonance element is L1 and the distance between the resonance element and the plurality of electrodes is L2, the resonance element and the plurality of electrodes are arranged so as to satisfy the condition of L1 <L2. The high frequency device according to claim 1, wherein 7. The high frequency device according to claim 1, wherein a stripline is constituted by the resonant element, the plurality of electrodes, and the dielectric member. 8. The high frequency device includes a dielectric layer provided in contact with the resonant element and having a dielectric constant different from that of the dielectric member, and the resonant element and the dielectric layer form a resonator. The high frequency device according to claim 1, wherein 9. The high frequency device according to claim 1, wherein the plurality of electrodes are formed in an interdigital shape. 10. A resonance element made of a superconductor, a dielectric member provided in the vicinity of the resonance element and having a permittivity changing according to an applied electric field, and a resonance member provided in the vicinity of the dielectric member. A plurality of interdigital-shaped electrodes provided so as to be perpendicular to the longitudinal direction of the element, and voltage applying means for applying a voltage to the plurality of electrodes so that a desired dielectric constant distribution is generated in the dielectric member. A high-frequency device comprising: 11. A dielectric layer whose permittivity changes in accordance with an applied electric field, a resonant element made of a superconductor provided on the dielectric layer, and a plurality of grounds provided under the dielectric layer. And a plurality of electrodes and a plurality of ground portions below the dielectric layer are alternately provided along the direction parallel to the surface of the dielectric layer, between the plurality of ground portions. A high frequency device comprising: a plurality of electrodes provided; and a means for supplying a voltage to the plurality of electrodes.