JP3514051B2 - Resin composition for silicon wafer protective film - Google Patents

Description

Detailed Description of the Invention

[0010]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for protecting a wafer surface during a chamfering process in the production of silicon wafers, and a method for protecting a wafer surface using this resin composition.

[0011]

2. Description of the Related Art In recent years, in the manufacture of silicon wafers, chamfering is often performed to improve the quality of the wafer. Chamfering is to make the cut surface of a wafer smooth by polishing with a cloth impregnated with an alkaline solution, and to wash and remove the adhered debris. However, the surface of the wafer may be contaminated by the alkaline substance used in the chamfering process, and the quality may be deteriorated. Therefore, a film for protecting the surface of the wafer has been demanded.

[0012]

Conventionally, since the wafer surface was not protected with a film during the chamfering process, contamination of the wafer surface was inevitable. The requirement as a protective film is that it has alkali resistance that does not dissolve in the wafer cleaning liquid during polishing,
It is easy to peel off after polishing.

[0013]

Means for Solving the Problems The present inventors have conducted research to overcome the above-mentioned drawbacks, and as a result, from a composition containing a specific polyvinyl alcohol and a specific double bond-containing compound or epoxy group-containing compound, The present invention has been completed by finding that the coating film consisting of is most suitable for protecting the surface of a silicon wafer and is easily removed. That is, the present invention has the following configurations. (1) Polyvinyl alcohol having a saponification degree of 90 to 99.4% and styrene, acrylic acid ester or methacrylic acid ester in an amount corresponding to 0.1 to 100% by weight of the polyvinyl alcohol are dissolved or dispersed in a solvent. used when chamfering process of the silicon wafer over the cut surface obtained Te
Coercive Mamorumaku resin composition is. (2) Silicon wafer obtained by dissolving or dispersing polyvinyl alcohol having a saponification degree of 90 to 99.4% and an epoxy group-containing compound in an amount corresponding to 0.1 to 100% by weight of the polyvinyl alcohol in a solvent. -Chamfering of cutting surface
Ri coercive Mamorumaku resin composition used during a process. (3) 4 measured with a Heppler-viscosimeter at 20 ° C.
Viscosity at% by weight aqueous solution is ^{3 × 10 -3 ~0.3Pa · S (} 1) or (2) silicon wafer over switch according to claim
Coercive Mamorumaku resin composition to be used when chamfering step of cross-section. (4) The solvent according to item (1) or (2), which contains 50 to 99% by weight of one or more of water, alcohol, glycol, glycol ether, glycol ether acetate and amide in total. Shirikon'u <br/> Fine over the cut surface coercive Mamorumaku resin composition to be used when chamfering step of.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION The polyvinyl alcohol used in the resin composition for a silicon wafer protective film of the present invention is a polymer having a saponification degree of 90 mol% or more. The degree of saponification is more preferably 98 mol% or more. 90% saponification degree
If it is less than 1, the alkali resistance is lowered, which is not preferable. The molecular weight of polyvinyl alcohol is preferably in the range of 3 × 10 −3 to 0.3 Pa · s, when expressed by a viscosity measured in an aqueous solution at a temperature of 20 ° C. and a concentration of 4% by weight with a Heppler viscometer. This is because if the molecular weight is too small, the alkali resistance of the coating film decreases, and if the molecular weight is too large, peeling becomes difficult.

As a solvent for dissolving or dispersing polyvinyl alcohol, water or an alcohol solvent such as methanol, ethanol, propanol, butanol, pentanol, etc., ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, or triethylene glycol is used. Glycol-based solvent such as propylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether,
Ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether,
Ethylene glycol dipropyl ether, ethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, Propylene glycol monoethyl ether, propylene glycol monopropyl ether,

Propylene glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, propylene glycol dibutyl ether, dipropylene glycol monomethyl ether,
Dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol dipropyl ether,
Glycol ether solvent such as dipropylene glycol dibutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate,

Ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate , Propylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monopropyl ether acetate, dipropylene glycol monobutyl ether acetate Glycol ether acetate-based solvents over preparative like, N, N-dimethylformamide, N, N-
Diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methyl-2-
Amide solvents such as pyrrolidone and 1,3-dimethyl-2-imidazolidinone are preferred. These solvents can be used alone or as a mixture. Among these solvents, water, methanol, ethanol, propanol, ethylene glycol, propylene glycol, N, N-dimethylacetamide, N-methyl-2-pyrrolidone,
1,3-Dimethyl-2-imidazolidinone is particularly preferred. The amount of the solvent added to the resin composition for a protective film of the present invention is 50 to 99% by weight, preferably 90 to 97% by weight. The concentration range is limited because the applicability and the film thickness of the coating film are taken into consideration.

Additives may be added to the resin composition for a silicon wafer protective film of the present invention in order to improve the following characteristics. That is, in order to improve alkali resistance, compounds having a double bond, such as styrenes, acrylic acid esters or methacrylic acid esters, or epoxy compounds (including double bond-containing compounds), such as allyl glycidyl ether, phenyl It is effective to add glycidyl ether and epoxy acrylates. The addition amount of these compounds is 100% by weight or less of polyvinyl alcohol, preferably 0.1 to 100% by weight, and more preferably 1 to 20% by weight. In order to exert a remarkable effect, 0.1% by weight or more is preferable and 1
If it exceeds 00% by weight, the releasability is lowered. The addition of a surfactant is effective for improving the releasability. Any of anion type, cation type and nonion type can be used.
Silicon, fluorine, and polymer leveling agents are effective for improving the film-forming property. Further, addition of a defoaming agent and a thickening agent also has the effect of improving the characteristics of the resin composition.

[0019]

The present invention will be described in more detail with reference to the following examples. Example 1 Water 85 g, ethanol 10 g, polyvinyl alcohol gohsenol NH-26 (saponification degree 99.4%, viscosity 0.064 Pa.s, manufactured by Nippon Synthetic Chemical Industry Co., Ltd., viscosity 0.064 Pa.s (measured at 20 ° C. using a Heppler viscometer) Viscosity of 4% aqueous solution))) 5
g, 0.5 g of butyl acrylate, 0.1 g of nonionic surfactant Emulgen 105 manufactured by Kao Corporation, Silicon-based leveling agent Byk-346 manufactured by Big Chemie Co., Ltd.
0.02 g was put into a 200 ml glass flask equipped with a stirrer and stirred at 85 ° C. for 20 hours to obtain a resin composition for a silicon wafer protective film. 6 parts of this resin composition
Drop 10 ml on inch silicon wafer,
After spin coating at 800 rpm for 20 seconds with a spin coater,
It was dried at 120 ° C. for 10 minutes to obtain a silicon wafer with a protective film having a thickness of 0.5 μm. After chamfering this silicon wafer, it was immersed in water at 80 ° C. for 2 minutes and showered with water at 80 ° C. for 30 seconds to remove the protective film. The silicon wafer surface was clean and no erosion by the alkaline solution was observed.

Comparative Example 1 When a silicon wafer without a protective film was chamfered, the surface of the silicon wafer was contaminated by erosion with an alkaline solution. As described above, according to the present invention, it is possible to prevent erosion by an alkaline solution during chamfering of a silicon wafer, which improves the yield and is very useful for increasing productivity.

─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-5-341508 (JP, A) JP-A-5-303201 (JP, A) JP-A-60-219750 (JP, A) JP-A-7- 201787 (JP, A) JP 63-296222 (JP, A) JP 7-126572 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) C09D 1/00-10 / 00 C09D 101/00-201/10 C08C 19/00-19/44 C08F 6/00-246/00 H01L 21/304-21/306

Claims (4)

(57) [Claims] 1. A polyvinyl alcohol having a saponification degree of 90 to 99.4% and 0.1 to 10 of the polyvinyl alcohol.
The amount of styrene corresponding to 0% by weight, when the chamfering process of the silicon wafer over the cut surface obtained by an acrylic acid ester or methacrylic acid ester is dissolved or dispersed in a solvent
Coercive Mamorumaku resin composition used for. 2. A polyvinyl alcohol having a saponification degree of 90 to 99.4% and 0.1 to 10 of the polyvinyl alcohol.
0 The amount of the epoxy group-containing compound corresponding to a weight percent of the silicon wafer over the cut surface obtained by dissolving or dispersing in a solvent
Coercive Mamorumaku resin composition that is used during the chamfering process. 3. The viscosity of a 4% by weight aqueous solution measured by a Heppler viscometer at 20 ° C. is 3 × 10 ^{−3 to} 0.3 Pa ·.
Silicon wafer over according to claim 1 or 2 is S
Coercive Mamorumaku resin composition to be used when chamfering process of the cut surface. 4. The solvent is water, alcohol, glycol,
One or two or more of glycol ether, glycol ether acetate and amide in total of 50 to 9
9 wt% claim 1 or 2 in the silicon <br/> wafer over the cut surface coercive Mamorumaku resin composition to be used when chamfering process as claimed contain.