JP3487212B2 - Surface treatment equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus for performing etching treatment, plating treatment, etc. on the surface of a semiconductor wafer, which is suitable for use in manufacturing a semiconductor pressure sensor, a semiconductor acceleration sensor, etc. It is a thing.

[0002]

2. Description of the Related Art Conventionally, several hundreds to ones on a semiconductor wafer.
About 000 recesses are formed using an etching solution such as potassium hydroxide to manufacture semiconductor sensors such as pressure sensors and acceleration sensors.

As shown in FIG. 5, a wafer 50 for a sensor is used.
The one surface 50a serves as a circuit surface forming a circuit, and the other surface 50b serves as a sensor shape (that is, the concave portion 5).
1) becomes the surface to be etched, and by changing the mask shape of the surface to be etched 50b, a product (recess 51) suitable for the function of the sensor can be formed. Specifically, as shown in detail in FIG. 6, each chip 52 on the wafer 50 has a pressure sensor in which the center of the chip is recessed, and FIG.
As shown in, there are various shapes such as an acceleration sensor in which the island-shaped bulge is left in the center of the chip and engraved around it.
These are made into a shape having a space (recess) 54 by devising the mask 53 and dissolving it with an anisotropic etching liquid such as potassium hydroxide.

The performance of these chips as a sensor is determined by the accuracy of the thickness t1 of the cross section of each chip. Therefore, it is necessary to perform etching with high accuracy so that the thickness t1 of all the chips 52 on the wafer 50 can be exactly the target value.

In the conventional etching apparatus, as shown in FIG. 8, the circuit surface 50a of the wafer is protected from the etching liquid 56 by the etching jig 55, and the surface to be etched 50b is protected.
Etching is performed by bringing the liquid into contact with the etching liquid 56. Specifically, the etching jig 55 is used as an etching tank by introducing the etching liquid 56 heated to the etching temperature by a preheating device (not shown) from the liquid supply port 57. Further, the etching liquid 56 in the etching jig 55 is maintained in a state where the stirring blade 58 and the heater 59 are accurately controlled to a target etching temperature, and the wafer 5
0 is etched to a target thickness t1. When the desired thickness is reached, pure water is introduced from the liquid supply port 57 and washed,
The etching is terminated by stopping the etching reaction.

FIG. 9 shows a change in etching amount by a conventional etching apparatus. When the ordinate represents the silicon thickness (t1 value in FIGS. 6 and 7) and the abscissa represents the etching time, the variation in the etching amount in the wafer surface increases from the original wafer thickness to the target thickness. Finally, FIG.
The trapezoidal distribution has a small amount of etching on the outer periphery of the wafer as shown in FIG. That is, FIG. 10 shows the result of measuring the etching amount on a line parallel to the orientation flat of the wafer as shown in FIG. In this example, in-plane variation of etching amount (etching amount of deepest concave portion−etching amount of shallowest concave portion)
Is 2.7% of the etching amount.

This is the etching rate (unit: μm /
(Min) is sensitive to the temperature of the etching solution, so that the distribution of the etching amount reflects the temperature distribution in the wafer surface.

The problem is that the conventional etching apparatus has a structure in which the temperature is maintained by heating the etching solution, so that the etching jig 55 of FIG. This occurs because the temperature of the portion (X portion in FIG. 8) decreases and the temperature of the outer peripheral portion of the wafer also decreases due to heat radiation from the outer periphery of the etching jig 55 during etching.

As a countermeasure against this, conventionally, as shown in FIG. 12, a step of heating the etching jig 55 in the constant temperature bath 60 until it reaches the etching temperature is provided, and the heat radiation of the etching jig 55 is reduced. Therefore, we are taking measures such as increasing the wall thickness. However, the heating by the constant temperature bath 60 has a long heating time of 1 hour or more, and it is necessary to handle the etching jig 55 having a high temperature (for example, 110 ° C. or more), which causes a problem that productivity is significantly reduced. Also,
The measure to increase the thickness of the etching jig 55 hinders the cooling effect when the etching is stopped and also causes the variation in the in-plane thickness of the wafer when the etching is stopped. in this way,
Even if these measures are comprehensively taken, it is difficult to reduce the variation in the etching amount within the wafer surface to 2.0% or less of the etching amount.

[0010]

SUMMARY OF THE INVENTION An object of the present invention is to provide a surface treatment apparatus capable of performing highly precise surface treatment while suppressing variations in the surface treatment within the wafer surface.

[0011]

According to a first aspect of the present invention, a surface treatment liquid is filled inside and a bottom surface portion is formed.
The bottom surface of the semiconductor wafer, with the outer periphery of the top surface sealed
The surface to be processed of the semiconductor wafer facing upward, supported by the outer periphery of the
A surface treatment jig that comes into contact with the surface treatment liquid, and the surface treatment jig.
It is placed in the surface treatment liquid inside the polishing jig to remove the surface treatment liquid.
The first heating means for heating and the inside of the surface treatment jig
The stirring means for stirring the surface treatment liquid and the surface treatment jig
Second heating for heating the outer peripheral portion of the semiconductor wafer in
And means are provided . By adopting this configuration , the semiconductor wafer is attached to the bottom of the surface treatment jig.
While the c is sealing the outer peripheral part of the upper surface,
The surface to be processed of the semiconductor wafer that is supported and faces upward is surface-treated.
Contact with liquid. Placed in the surface treatment solution inside the surface treatment jig
The surface treatment liquid is heated and agitated by the first heating means.
The surface treatment liquid is stirred by the stirring means. And the surface treatment
The surface to be processed of the semiconductor wafer facing upward is surface-treated with a liquid.
At the time of processing , the temperature of the outer peripheral portion of the semiconductor wafer in the surface treatment jig can be controlled by the second heating means , and the desired surface treatment is performed within the wafer surface. For example, a heat amount commensurate with heat radiation can be supplied to the outer peripheral portion of the semiconductor wafer to perform uniform surface treatment within the wafer surface.

In this way, it is possible to perform surface treatment with high accuracy while suppressing variations in surface treatment within the wafer surface. Here, as described in claim 2, prior
Serial second heating means, before the start of the surface treatment, the pre-SL surface treatment tool, when than the temperature of the surface treatment solution has a function of increasing heating a predetermined temperature, the initial state of the surface treatment ( For example, in the case of an etching apparatus, the distribution of the etching amount on the wafer surface at the initial stage of etching) can be made highly accurate.

Further, as described in claim 3, wherein said
Second heating means, the one having a function to separate thermally from the front surface processing jig that heat after the surface treatment can be carried out stopping the surface treatment (eg washing) quickly.

Furthermore, as described in claim 4, wherein
The second heating means is adapted to the surface treatment condition of the semiconductor wafer.
When those having a function of changing the pressurizing heat temperature Te (if for example, an etching apparatus, uniformity of the thickness distribution of each chip of each wafer) uniformity of surface treatment of each wafer can be achieved.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. This embodiment uses a silicon wafer as a semiconductor wafer, and is applied to an etching apparatus for forming a recess in each chip of the silicon wafer, and uses potassium hydroxide heated to about 110 ° C. as an etching solution. By forming a recess in each chip, the pressure sensor of FIG. 6 and the acceleration sensor of FIG. 7 can be manufactured.

FIG. 1 shows the overall structure of an etching apparatus for thin-wall processing as a surface processing apparatus. This etching apparatus has an etching pot 1 as a surface treatment jig, and FIG. 2 shows an enlarged view of the etching pot 1.

The etching apparatus shown in FIG. 1 is a single wafer capable of mechanically holding the surface to be etched of the silicon wafer 7 in contact with the etching liquid 23 so that the liquid can be supplied, discharged, heated and stirred. In this etching apparatus, the outer peripheral portion of the wafer is sealed from the circuit side which is the non-etching surface of the silicon wafer 7, and a heater (heat source) as a second heating means before starting etching and during etching of the sealing portion. 19 and heating ring (heat transfer member) 5
To heat up. As a result, the distribution of the etching amount within the wafer surface is highly accurate. Also,
When the desired etching amount is reached, pure water is injected into the pot 1 to complete the etching.

The details will be described below. As shown in FIG. 2, the etching pot 1 includes a plate-shaped wafer base 2 and a cylindrical wafer ring 3. The wafer base 2 and the wafer ring 3 are made of a material having a high heat insulating effect such as Teflon and polypropylene. A through hole 4 is formed in the central portion of the wafer base 2, and a heating ring 5 is arranged in the opening above the through hole 4. The heating ring 5 has a plate shape, and a through hole 6 is formed in the center thereof. The heating ring 5 is made of metal such as stainless steel or nickel having excellent thermal conductivity.

A silicon wafer 7 can be placed on the heating ring 5 on the upper surface of the wafer base 2, and the heating ring 5
When the silicon wafer 7 is placed on the upper surface of the wafer 7, only the outer peripheral portion of the lower surface of the wafer 7 contacts the heating ring 5.
Further, the wafer ring 3 is arranged on the wafer 7 with one opening thereof facing down. That is, the silicon wafer 7
Are arranged so as to close the lower surface opening of the cylindrical wafer ring 3. Further, a concave portion 8 is formed in an annular shape on the outer peripheral side of the wafer mounting portion (placement of the heating ring 5) on the wafer base 2, and the protruding portion 9 of the wafer ring 3 is fitted into the concave portion 8. Thus, the concave portion 8 has a function of aligning.
Further, a flat seal surface S1 is formed in an annular shape on the outer peripheral side of the recess 8 in the wafer base 2 (around the wafer mounting portion), and the recess 10 is formed in an annular shape on the seal surface S1 to function as a vacuum pocket. To do.

A wafer-shaped seal packing 11 is fixed to the inner peripheral portion of the lower surface of the wafer ring 3, and the packing 11 is formed into a wafer shape so as to seal the upper surface of the edge portion of the silicon wafer 7. The wafer type seal packing 11 can seal against the etching liquid filled in the wafer ring 3. That is, the seal packing 11 is for liquid-tightly sealing the lower surface of the wafer ring 3 and the outer peripheral portion of the wafer 7 with the silicon wafer 7 placed on the wafer base 2. Further, a flat seal surface S2 is formed on the outer peripheral portion of the lower surface of the wafer ring 3.
Is formed in an annular shape, and the recess 12 is formed in an annular shape in the sealing surface S2, and functions as a vacuum pocket.

An annular X-shaped packing 13 is arranged between the sealing surface S1 of the wafer base 2 and the sealing surface S2 of the wafer ring 3. Then, the air in the recesses (vacuum pockets) 10 and 12 is discharged by a vacuum pump or the like, whereby the X-shaped packing 13 contracts and the wafer base 2 and the wafer ring 3 are attracted, and the seal packing 11 seals the silicon wafer. The outer peripheral portion of 7 is fixed in a sealed state.

The etching pot 1 thus constructed is placed on the pot placing table 14 as shown in FIG.
FIG. 3 shows the pot mounting table 14. In FIG. 3, a cylinder storage chamber 16 is formed inside the base block 15, and an elevating cylinder 17 is arranged in the storage chamber 16. As the lifting cylinder 17, for example, an air cylinder or the like is used. The lifting cylinder 17 has a movable rod 18, and the rod 18 expands and contracts in the vertical direction. A jig heater 19 is attached to the rod 18. This jig heater 19 has a hole 20 formed in the base block 15.
It is possible to move up and down while keeping the inside airtight by an O-ring 21.

Then, as shown in FIG. 1, when the jig heating heater 19 is moved upward by the lifting cylinder 17 while the etching pot 1 is placed on the pot placing table 14, the upper surface of the heater 19 is heated by the heating ring. Contact 5.
In this state, the heat generated by the heater 19 is supplied to the outer peripheral portion of the wafer 7 on the non-etching surface through the heating ring 5, and the outer peripheral portion of the wafer in the pot 1 can be heated. A heat insulating plate 22 is provided at the center of the upper surface of the jig heater 19, and the heat insulating plate 22 protects portions other than the contact surface with the heating ring 5 from being heated. The jig heater 19 is controlled to a target temperature by the controller 35.

In FIG. 1, the wafer-shaped seal packing 11 seals the etching liquid 23 in the etching pot 1 and the outer peripheral portion of the silicon wafer 7 is masked (protected). In this way the etching pot 1
The inside of the container is filled with the heated etching solution 23, and the silicon wafer 7 is supported in a state where the outer peripheral portion is sealed to the bottom surface of the pot 1, and the etching surface of the upward facing silicon wafer 7 contacts the etching solution 23. .

Further, the upper opening of the etching pot 1 shown in FIG. 1 is closed by the cap 24. A stirring blade 25 is hung down on the cap 24 while being sealed by an O-ring 26, and the stirring blade 25 is rotated by driving a motor 27 to stir the etching solution 23. Stirring blade 25 and motor 27
Constitutes a stirring means. Further, the cap 24 is provided with a heater 28 serving as a first heating means.
9 is hung down in a sealed state, and the heater 28 heats the etching liquid 23. In addition, the cap 24
The temperature sensor 30 is hung down while being sealed by the O-ring 31, and the temperature of the etching liquid 23 is detected by the temperature sensor 30. During the etching, the etching solution 23 is sufficiently stirred by the stirring blade 25, and the temperature controller 3
2, the heater 28 is energized and controlled so that the temperature of the liquid by the temperature sensor 30 becomes a predetermined temperature.

A liquid supply port 33 and a liquid discharge port 34 are formed in the cap 24, and the liquid supply port 33 and the liquid discharge port 34 are connected to a utility (not shown). Then, the etching liquid is supplied into the pot 1 through the liquid supply port 33, and the washing liquid (pure water) when the etching is stopped can be introduced. Also,
The liquid overflowing in the pot 1 can be discharged through the liquid discharge port 34.

A temperature controller 32, a motor 27, a jig heater 19, an elevating cylinder 17, etc. are controlled by a controller 35 as a device for controlling the etching apparatus. That is, the controller 35 is composed of a computer or the like that stores wafer processing conditions (etching temperature, preliminary heating time, required thickness, etc.), functions as a production control device, and heats the heater 19 including the heater 19 according to the wafer etching conditions. Change the temperature. In addition, the etching apparatus includes equipment such as a measuring instrument.

Next, the operation of the etching apparatus thus constructed will be described. Controller 35 (production control device)
Is the product / processing condition (etching temperature,
Select the required thickness, etc.) and prepare for processing such as determining the wafer etching conditions. Then, the wafer base 2 of FIG.
From the state where the wafer ring 3 and the wafer ring 3 are disassembled, the silicon wafer 7 is heated with respect to the wafer base 2 by a loader (not shown) so that the surface to be etched faces upward.
Can be placed on top of. Then, the wafer ring 3 is covered, and the recesses (vacuum pockets) 10 and 12 are evacuated by a vacuum pump (not shown) or the like. As a result, the X-type packing 13 contracts, the wafer base 2 and the wafer ring 3 are attracted, and the edge packing (masking) of the wafer 7 is performed by the seal packing 11 provided on the wafer ring 3 for sealing the wafer edge. .

Further, as shown in FIG. 1, the etching pot 1 is moved by a loading device (not shown).
It is mounted on the pot mounting table 14. And cap 2
4 is lowered to the etching pot 1 by an elevating device (not shown), and the jig heater 19 is moved upward by driving the cylinder 17 and pressed against the heating ring 5. In this state, the jig heater 19 is operated to allow the heat generated by the jig heater 19 to pass through the heating ring 5 and the wafer 7 in the pot 1.
The outer peripheral portion of the lower surface of and the vicinity thereof are heated to the liquid temperature at the start of etching. The heating temperature at this time depends on the etching conditions of the wafer.

In this way, by the jig heater 19,
Through the heating ring 5, the outer circumference of the wafer in the pot 1 and its vicinity are preheated so as to be equal to the initial temperature of the etching solution 23.

After the temperature inside the etching pot 1 is raised in this manner, the etching solution whose temperature and concentration have been adjusted by an etching solution supply device (not shown) is supplied from the supply port 33. Then, the stirring blade 25 is driven by the motor 27,
By controlling the temperature of the heater 28 by the temperature controller 32, the etching temperature condition in the etching pot 1 is adjusted. Then, the surface to be etched of the wafer 7 is etched. Even during this etching, the jig heater 19 keeps the temperature of the outer peripheral portion of the wafer 7 in the pot 1 and its vicinity through the heating ring 5. The heating temperature at this time depends on the etching conditions of the wafer.

As described above, the jig heater 19 keeps the temperature of the outer periphery of the wafer in the pot 1 and the vicinity thereof through the heating ring 5, so that the outer periphery of the wafer remains in the etching pot 1 during the etching by the etching solution 23. Cooling due to heat dissipation is prevented.

When a predetermined amount of etching is performed and the thickness (t1 value in FIGS. 6 and 7) at the bottom surface of the recess (corresponding to reference numeral 54 in FIGS. 6 and 7) in the silicon wafer 7 reaches a desired value, A jig heating heater 19 is provided by the lifting cylinder 17 of FIG.
And the heat supply to the heating ring 5 is stopped. In other words, during cleaning after etching, the jig heater 19 is lowered by the elevating cylinder 17 and stored in the base block 15 in order to enhance the cooling effect of the etching pot 1. By this action, the jig heater 19 can be maintained in a heated state in preparation for etching in the next cycle without being cooled.

Further, in order to stop the etching, a cleaning liquid (pure water) is introduced into the etching pot 1 from a cleaning liquid supply source (not shown) through the liquid supply port 33 of FIG. 1 to dilute and cool the etching liquid (washing with water).・ Cool down) to stop etching immediately. The supplied mixed liquid of the cleaning liquid and the etching liquid is continuously discharged from the liquid discharge port 34.

After sufficient cleaning, the supply of cleaning liquid is stopped and the motor 27 is stopped. After that, a cleaning liquid in the etching pot 1 is forcibly discharged by using a drainage device (a vacuum drainage device such as an ejector) which is not shown, and then the etching pot 1 is disassembled by the above-described reverse operation to remove the wafer 7 Is removed to complete the process.

That is, the vacuuming in the recesses (vacuum pockets) 10 and 12 by a vacuum pump or the like is stopped, and the recesses 10 and
The inside of 12 is brought to atmospheric pressure. Then, the cap 24 and the wafer ring 3 (seal packing 11) are removed, and the silicon wafer 7 after etching is sent to the next step.

FIG. 4 shows the result of measuring the thickness distribution of the processed wafer. That is, the measurement result of the etching amount in the wafer surface when the etching is performed by the above-described etching apparatus is shown. As a result, the in-plane variation of the etching amount (the etching amount in the deepest concave portion−the etching amount in the shallowest concave portion) becomes 0.8% of the etching amount, which is less than the thickness distribution accuracy of the chip manufactured by the conventional etching apparatus. The thickness variation within the wafer surface could be reduced to 1/3 or less.

Further, conventionally, in order to deal with many kinds of products, it is necessary to deal with the etching work such as preheating temperature of the etching pot 1 and time management by changing each product, which is a complicated process. Although management was required, this device can handle all product types by automatically setting the temperature of the jig heater 19 in one process (one type of device). Only by instructing the controller (production control device) 35, it is possible to fully automate.

As described above, the present embodiment has the following features. (B) When the wafer 7 is supported on the bottom surface of the etching pot 1 and the surface to be etched of the wafer 7 facing upward is etched by the heated etching solution 23, the jig heater 19 and the heating ring 5 are used. , Pot 1
The amount of heat commensurate with the heat radiation is supplied to the outer peripheral portion of the wafer 7 in FIG. 1 to uniformly stabilize the temperature distribution in the wafer surface at the start of etching and during etching, and thus it is possible to achieve higher precision etching than ever. . Further, as shown in FIG. 12, the etching jig 55 is heated in the constant temperature bath 60 before the etching is started, and the wafer is etched with high accuracy without increasing the thickness in order to reduce the heat radiation of the etching jig 55. be able to. Further, there is no need to use a large-scale transfer device. Further, since it is not necessary to increase the thickness in order to reduce the heat radiation of the etching jig 55, the pot 1 can be made lighter and smaller than the conventional one. In addition, since the through hole 4 (see FIG. 2) is formed in the central portion of the wafer base 2, the weight can be reduced accordingly.

As described above, highly accurate etching can be performed by suppressing variations in the etching amount within the wafer surface. (B) Since the jig heater (heat source) 19 is thermally separated from the etching pot 1 after the etching, the process can be promptly performed by increasing the speed of water washing, which is the etching stop process. (C) Since the heating temperature by the jig heater 19 and the heating ring 5 is changed according to the etching conditions of the wafer 7, it is possible to make the distribution of the thickness of each chip of each wafer uniform.

In addition to what has been described so far, the following may be carried out. Prior to the start of etching, the pot 1 was heated by using the jig heater 19 and the heating ring 5.
You may make it heat a predetermined temperature higher than the temperature of an etching liquid. For example, the liquid temperature at the start of etching is 1
If it is 10 ° C, the temperature is increased by 20 ° C to 130 ° C. Then, the distribution of the etching amount on the wafer surface at the initial stage of etching can be made highly accurate.

Further, by utilizing the fact that the temperature of the outer peripheral portion of the wafer can be controlled separately from the central portion, if the in-plane distribution of the original thickness of the wafer is concave, the etching rate of the outer periphery can be increased, Alternatively, if the in-plane distribution of the original thickness of the wafer is convex, the etching of the outer periphery is delayed to control the distribution of the etching amount according to the original thickness distribution of the wafer. By doing so, higher reliability of thickness distribution can be ensured, and high reliability and productivity which cannot be obtained in the past can be obtained.

In the above description, the etching apparatus does not apply a potential, but it goes without saying that the accuracy can be further improved by adding an electrochemical stop etching (anodic oxidation stop) function.

Further, the silicon wafer 7 in the pot 1
A thickness sensor may be disposed on the lower surface side of the wafer, and the etching amount of the wafer may be monitored by this thickness sensor to detect the etching end point. By doing so, it becomes possible to further improve the accuracy including the repeat accuracy between the wafers. That is, in order to heat only the outer periphery of the wafer, the jig heater 19 may have a donut shape, and the thickness sensor may be arranged at the center of the heater 19. Alternatively, the thickness sensor may be moved in the horizontal direction to detect the etching amount of each chip (recess) in the wafer surface.

Further, in this embodiment, the rotary stirring blade 2 is used.
5 (see FIG. 1) was illustrated as an example, but the pot 1
The etching solution may be agitated by shaking itself.

Further, although the etching apparatus has been described, it can be applied to a surface treatment apparatus for obtaining high quality by heating a liquid to make the wafer surface temperature distribution uniform, and a surface having high temperature control such as gold plating. The same effect can be obtained in the processing.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram of an etching apparatus according to an embodiment.

FIG. 2 is a sectional view of an etching pot.

FIG. 3 is a sectional view of the pot mounting table.

FIG. 4 is a diagram showing a measurement result of an in-plane etching amount of a wafer.

FIG. 5 is a diagram showing a wafer.

FIG. 6 is a view showing a chip.

FIG. 7 is a diagram showing a chip.

FIG. 8 is a sectional view of a conventional etching apparatus.

FIG. 9 is a diagram showing a change in diaphragm thickness in an etching process.

FIG. 10 is a view showing a measurement result of an in-plane etching amount of a wafer.

FIG. 11 is a plan view of a wafer for explaining thickness measurement points.

FIG. 12 is a sectional view of a conventional etching apparatus.

[Explanation of symbols]

1 ... Etching pot, 5 ... Heating ring, 7 ... Silicon wafer, 17 ... Lifting cylinder, 19 ... Jig heating heater,
23 ... Etching liquid, 35 ... Controller.

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21 / 306,21 / 308

Claims (4)

(57) [Claims] 1. A along with the table surface treatment liquid to the inside is filled, the semiconductor wafer is sealed an outer peripheral portion of the top surface to the bottom portion
The surface treatment jig, in which the outer peripheral portion of the lower surface is supported in such a state that the surface to be processed of the semiconductor wafer facing upward is in contact with the surface treatment liquid, and the surface treatment jig inside the surface treatment liquid, are arranged in the surface treatment jig.
First heating means for heating the surface treatment liquid, and a stirring hand for stirring the surface treatment liquid inside the surface treatment jig.
A surface treatment apparatus comprising: a step; and a second heating unit that heats an outer peripheral portion of the semiconductor wafer in the surface treatment jig. Wherein said second heating means, before the start of the surface treatment, the pre-SL surface treatment jig according to claim 1 than the temperature of the surface treatment solution has a function of increasing heating a predetermined temperature The surface treatment apparatus according to. Wherein the second heating means has a function to separate thermally from the front surface processing jig that heat after the surface treatment
The surface treatment apparatus according to claim 1 or 2, which is a thing . Wherein said second heating means also has a function of changing the pressurizing heat temperature according to the surface treatment conditions of the semiconductor wafer
The surface treatment apparatus according to any one of claims 1 to 3.