JP3480669B2 - Particle passing position detector - Google Patents

Particle passing position detector

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Publication number
JP3480669B2
JP3480669B2 JP01224598A JP1224598A JP3480669B2 JP 3480669 B2 JP3480669 B2 JP 3480669B2 JP 01224598 A JP01224598 A JP 01224598A JP 1224598 A JP1224598 A JP 1224598A JP 3480669 B2 JP3480669 B2 JP 3480669B2
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JP
Japan
Prior art keywords
photoelectric conversion
conversion element
voltage
conversion elements
measurement region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01224598A
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Japanese (ja)
Other versions
JPH11211650A (en
Inventor
朋信 松田
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Rion Co Ltd
Original Assignee
Rion Co Ltd
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Priority to JP01224598A priority Critical patent/JP3480669B2/en
Publication of JPH11211650A publication Critical patent/JPH11211650A/en
Application granted granted Critical
Publication of JP3480669B2 publication Critical patent/JP3480669B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、粒子の通過位置を
検出する装置であって、例えば流路を通過する粒子の個
数を粒径を弁別してカウントする粒子計数装置に適用す
る粒子通過位置検出装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for detecting the passage position of particles, for example, a particle passage position detection applied to a particle counting device for counting the number of particles passing through a channel by discriminating the particle size. Regarding the device.

【0002】[0002]

【従来の技術】従来の粒子計数装置としては、図18に
示すように、レーザ光Laをフローセル100の内部流
路に照射し、この内部流路を粒子が通過する際に、粒子
が放出する散乱光Lsを集光光学系101によって光電
変換素子102に集光させ、光電変換素子102の出力
信号に基づき、比較回路103及びパルス計数回路10
4により、内部流路を通過する粒子の個数を粒径を弁別
して計数する光散乱式粒子計数装置が知られている。
2. Description of the Related Art As a conventional particle counting device, as shown in FIG. 18, a laser beam La is applied to an internal flow path of a flow cell 100, and the particle is emitted when the particle passes through the internal flow path. The scattered light Ls is condensed on the photoelectric conversion element 102 by the condensing optical system 101, and based on the output signal of the photoelectric conversion element 102, the comparison circuit 103 and the pulse counting circuit 10
4, there is known a light scattering type particle counting device for counting the number of particles passing through the internal flow path by discriminating the particle size.

【0003】光電変換素子102は、粒子が内部流路を
通過すると、粒子が放出する散乱光Lsに応じたパルス
状の電圧を出力する。このパルス状の電圧の波高値は、
粒子の粒径によって変化する。比較回路103は、光電
変換素子102の出力電圧を所定値と比較し、光電変換
素子102の出力電圧が所定値より大きいとき、所定の
粒径よりも大きいとしてパルス信号を出力する。このパ
ルス信号をパルス計数回路104により計数して、粒子
の個数を検出する。
The photoelectric conversion element 102 outputs a pulsed voltage corresponding to the scattered light Ls emitted by the particles when the particles pass through the internal flow path. The peak value of this pulsed voltage is
It depends on the particle size. The comparison circuit 103 compares the output voltage of the photoelectric conversion element 102 with a predetermined value, and when the output voltage of the photoelectric conversion element 102 is larger than the predetermined value, outputs a pulse signal as being larger than the predetermined particle size. This pulse signal is counted by the pulse counting circuit 104 to detect the number of particles.

【0004】[0004]

【発明が解決しようとする課題】しかし、図18に示す
光散乱式粒子計数装置においては、レーザ光Laを照射
した内部流路のレーザ光強度が一定でない場合、粒径の
弁別を誤って計数するという問題がある。内部流路のレ
ーザ光強度は、一般にレーザ光束の中心部が最も高く、
中心部からずれて端部に行くほど低くなるという分布
(ほぼガウス分布)を示す場合が多い。
However, in the light-scattering type particle counting device shown in FIG. 18, when the laser light intensity of the internal flow path irradiated with the laser light La is not constant, the discrimination of the particle size is erroneously performed. There is a problem of doing. The laser light intensity of the internal flow path is generally highest in the center of the laser beam,
In many cases, the distribution deviates from the center and becomes lower toward the ends (almost Gaussian distribution).

【0005】従って、粒子の粒径及び光学的性質は同じ
であっても、レーザ光束の端部を通過するときと、中心
部を通過するときとでは、粒子の散乱光Lsの強度が異
なり、光電変換素子102の出力電圧が異なる。そのた
め、比較回路103の出力信号も異なり、パルス計数回
路104が粒子を計数する場合としない場合がある。
Therefore, even if the particle size and optical properties of the particles are the same, the intensity of the scattered light Ls of the particles is different between when passing through the end portion of the laser beam and when passing through the central portion. The output voltage of the photoelectric conversion element 102 is different. Therefore, the output signal of the comparison circuit 103 is different, and the pulse counting circuit 104 may or may not count particles.

【0006】本発明は、従来の技術が有するこのような
問題点に鑑みてなされたものであり、その目的とすると
ころは、粒子の通過位置が分かれば、従来の問題点が解
決される点に着目して、粒子が通過した流路の位置を検
出することができる粒子通過位置検出装置を提供しよう
とするものである。
The present invention has been made in view of the above problems of the prior art. The object of the present invention is to solve the conventional problems as long as the passage position of particles is known. In view of the above, an object of the present invention is to provide a particle passage position detecting device capable of detecting the position of a flow path through which particles have passed.

【0007】[0007]

【課題を解決するための手段】上記課題を解決すべく請
求項1に係る発明は、透明部材で屈曲形状に形成したフ
ローセルと、このフローセルの流路にレーザ光を照射し
て測定領域を形成するレーザ光源と、前記流路の中心軸
と一致する光軸を有して前記測定領域で発生する粒子の
散乱光を集光する集光手段と、この集光手段が集光した
散乱光を受光する複数の光電変換素子から成る光検出手
段と、前記複数の光電変換素子の出力信号を検出する電
圧検出手段と、この電圧検出手段の出力信号を互いに比
較して粒子が通過した前記測定領域の通過位置情報を出
力する位置検出手段を備えるものである。
In order to solve the above-mentioned problems, the invention according to claim 1 forms a measurement region by irradiating a flow cell formed of a transparent member in a bent shape with a laser beam on a flow path of the flow cell. A laser light source, a condensing unit that has an optical axis that coincides with the central axis of the flow channel, and condenses the scattered light of particles generated in the measurement region, and the scattered light condensed by the condensing unit. Light detection means composed of a plurality of photoelectric conversion elements for receiving light, voltage detection means for detecting output signals of the plurality of photoelectric conversion elements, and the measurement area where particles have passed by comparing the output signals of the voltage detection means with each other. The position detecting means for outputting the passing position information of is included.

【0008】請求項2に係る発明は、請求項1記載の粒
子通過位置検出装置において、前記複数の光電変換素子
から成る光検出手段は、各受光面が流路の中心軸に垂直
で、且つ流路の中心軸とレーザ光軸にほぼ垂直な方向に
隣接して設けたN(Nは2以上の整数)個の光電変換素
子から成る光電変換素子アレイである。
According to a second aspect of the present invention, in the particle passing position detecting device according to the first aspect, in the light detecting means including the plurality of photoelectric conversion elements, each light receiving surface is perpendicular to the central axis of the flow path, and The photoelectric conversion element array includes N (N is an integer of 2 or more) photoelectric conversion elements provided adjacent to each other in a direction substantially perpendicular to the central axis of the flow path and the laser optical axis.

【0009】請求項3に係る発明は、請求項1記載の粒
子通過位置検出装置において、前記複数の光電変換素子
から成る光検出手段は、縦と横がV個×H個(V、Hと
も2以上の整数)の光電変換素子から成り、各受光面が
流路の中心軸に垂直である。
According to a third aspect of the present invention, in the particle passing position detecting device according to the first aspect, the photodetecting means composed of the plurality of photoelectric conversion elements is V × H in length and width (both V and H). Each of the light receiving surfaces is perpendicular to the central axis of the flow path.

【0010】請求項4に係る発明は、透明部材で形成し
たフローセルと、このフローセルの流路にレーザ光を照
射して測定領域を形成するレーザ光源と、前記レーザ光
の中心軸と一致する光軸を有して前記測定領域で発生す
る粒子の散乱光を集光する集光手段と、この集光手段の
光軸上に位置するトラップと、前記集光手段が集光した
散乱光を受光する複数の光電変換素子から成る光検出手
段と、前記複数の光電変換素子の出力信号を検出する電
圧検出手段と、この電圧検出手段の出力信号を互いに比
較して粒子が通過した前記測定領域の通過位置情報を出
力する位置検出手段を備えるものである。
According to a fourth aspect of the present invention, there is provided a flow cell formed of a transparent member, a laser light source for irradiating a flow path of the flow cell with laser light to form a measurement region, and light having a central axis of the laser light. Concentrating means for concentrating scattered light of particles generated in the measurement region having an axis, a trap located on the optical axis of the condensing means, and receiving scattered light condensed by the condensing means Photodetection means consisting of a plurality of photoelectric conversion elements, voltage detection means for detecting the output signals of the plurality of photoelectric conversion elements, the output signal of the voltage detection means is compared with each other of the measurement region through which the particles have passed. It is provided with position detecting means for outputting passage position information.

【0011】請求項5に係る発明は、請求項4記載の粒
子通過位置検出装置において、前記複数の光電変換素子
から成る光検出手段は、各受光面がレーザ光軸に垂直
で、且つ流路の中心軸とレーザ光軸にほぼ垂直な方向に
隣接して設けたN(Nは2以上の整数)個の光電変換素
子で成る光電変換素子アレイである。
According to a fifth aspect of the present invention, in the particle passage position detecting device according to the fourth aspect, the light detecting means including the plurality of photoelectric conversion elements has each light receiving surface perpendicular to the laser optical axis and a flow path. Is a photoelectric conversion element array including N (N is an integer of 2 or more) photoelectric conversion elements provided adjacent to each other in a direction substantially perpendicular to the central axis of the laser.

【0012】[0012]

【発明の実施の形態】以下に本発明の実施の形態を添付
図面に基づいて説明する。ここで、図1は本発明の第1
の実施の形態に係る粒子通過位置検出装置の構成図、図
2は図1においてレーザ光を照射した測定領域の平断面
図、図3は図1においてレーザ光を照射した測定領域の
縦断面図、図4乃至図8は図1において光電変換素子ア
レイの受光状態(a)とそのときの出力波形(b)を示
す図、図9は粒子情報参照テーブルを示す図、図10は
本発明の第2の実施の形態に係る粒子通過位置検出装置
の構成図、図11は本発明の第3の実施の形態に係る粒
子通過位置検出装置の構成図、図12は図11において
レーザ光を照射した測定領域の縦断面図、図13乃至図
17は図11において光電変換素子アレイの受光状態
(a)とそのときの出力波形(b)を示す図である。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 shows the first of the present invention.
2 is a configuration diagram of a particle passage position detecting device according to the embodiment, FIG. 2 is a plan sectional view of a measurement region irradiated with laser light in FIG. 1, and FIG. 3 is a longitudinal sectional view of a measurement region irradiated with laser light in FIG. 4 to 8 are diagrams showing the light receiving state (a) of the photoelectric conversion element array and the output waveform (b) at that time in FIG. 1, FIG. 9 is a diagram showing a particle information reference table, and FIG. 10 is a diagram showing the present invention. FIG. 11 is a configuration diagram of a particle passage position detection device according to a second embodiment, FIG. 11 is a configuration diagram of a particle passage position detection device according to a third embodiment of the present invention, and FIG. FIG. 13 to FIG. 17 are vertical cross-sectional views of the measured region, and FIG. 13 is a diagram showing the light receiving state (a) of the photoelectric conversion element array in FIG.

【0013】本発明の第1の実施の形態に係る粒子通過
位置検出装置は、図1に示すように、フローセル1、レ
ーザ光源2、集光光学系3、光電変換素子アレイ4及び
処理装置5から成る。
As shown in FIG. 1, the particle passing position detecting apparatus according to the first embodiment of the present invention includes a flow cell 1, a laser light source 2, a focusing optical system 3, a photoelectric conversion element array 4, and a processing unit 5. Consists of.

【0014】フローセル1は、透明部材から成り、所定
長さの直線流路1aを有し、全体として屈曲している。
フローセル1は、断面形状を四角形状とし、全体として
L型筒形状に形成したものである。直線流路1aの中心
軸は、X方向と一致している。
The flow cell 1 is made of a transparent member, has a linear flow path 1a of a predetermined length, and is bent as a whole.
The flow cell 1 has a quadrangular cross section and is formed in an L-shaped tubular shape as a whole. The central axis of the straight flow path 1a coincides with the X direction.

【0015】所定長さの直線流路1aを設けた理由は、
フローセル1に供試流体を流したとき、供試流体の流れ
を層流にするためである。なお、層流を得るための条件
としては、供試流体の粘度、直線流路の長さ、流路の断
面形状及び流速などが挙げられ、直線流路1aの長さ及
び流路の断面形状については、供試流体の粘度と流速を
勘案して決定している。
The reason for providing the linear flow path 1a having a predetermined length is as follows.
This is for making the flow of the test fluid laminar when the test fluid is flown through the flow cell 1. The conditions for obtaining the laminar flow include the viscosity of the test fluid, the length of the linear flow path, the cross-sectional shape and flow velocity of the flow path, and the length of the straight flow path 1a and the cross-sectional shape of the flow path. Is determined in consideration of the viscosity and flow velocity of the test fluid.

【0016】レーザ光源2は、フローセル1の直線流路
1aの所定箇所にレーザ光Laを照射して照射領域を形
成する。ここで、レーザ光Laの光軸は、Z方向と一致
し、X方向と一致する直線流路1aの中心軸と直交して
いる。
The laser light source 2 irradiates a predetermined portion of the linear flow path 1a of the flow cell 1 with the laser light La to form an irradiation area. Here, the optical axis of the laser beam La coincides with the Z direction and is orthogonal to the central axis of the linear flow path 1a coincident with the X direction.

【0017】また、図2に示すように、レーザ光Laの
光軸とフローセル1の外壁との成す角を所定角度θに設
定してもよい。これは、レーザ光Laがフローセル1の
外壁に反射して反射光の一部がレーザ光源2に戻るのを
防止するためである。反射光の一部がレーザ光源2に戻
ると、帰還ノイズがレーザ光Laに重畳するので好まし
くないからである。
Further, as shown in FIG. 2, the angle formed by the optical axis of the laser beam La and the outer wall of the flow cell 1 may be set to a predetermined angle θ. This is to prevent the laser light La from being reflected by the outer wall of the flow cell 1 and returning part of the reflected light to the laser light source 2. This is because, when a part of the reflected light returns to the laser light source 2, the feedback noise is superimposed on the laser light La, which is not preferable.

【0018】なお、レーザ光Laがフローセル1の外壁
で反射しないように、例えばレーザ光Laをフローセル
1の外壁と同じ物質中を通して直線流路1aの所定箇所
に導くことができれば、所定角度θを設定する必要はな
い。
If the laser light La can be guided to a predetermined position of the linear flow path 1a through the same material as the outer wall of the flow cell 1 so that the laser light La is not reflected by the outer wall of the flow cell 1, the predetermined angle θ is obtained. No need to set.

【0019】集光光学系3は、フローセル1の直線流路
1aの中心軸と一致する光軸を有し、図2に示す照射領
域内の所定の領域M(以下、測定領域Mと呼ぶ)におい
てレーザ光Laを受けた粒子が発する散乱光Lsを集光
する機能を備える。
The condensing optical system 3 has an optical axis that coincides with the central axis of the linear flow path 1a of the flow cell 1, and has a predetermined area M (hereinafter referred to as measurement area M) in the irradiation area shown in FIG. In, there is a function of condensing the scattered light Ls emitted by the particles that have received the laser light La.

【0020】光電変換素子アレイ4は、3個の光電変換
素子4a,4b,4cから成り、各受光面が流路の中心
軸に垂直で、且つ流路の中心軸(X方向)とレーザ光軸
(Z方向)に垂直なY方向に隣接して設けられている。
光電変換素子4a,4b,4cは、粒子が測定領域Mを
通過する間に発する散乱光Lsを電圧に変換する。
The photoelectric conversion element array 4 is composed of three photoelectric conversion elements 4a, 4b and 4c, each light-receiving surface being perpendicular to the central axis of the channel, and the central axis of the channel (X direction) and laser light. It is provided adjacent to the Y direction perpendicular to the axis (Z direction).
The photoelectric conversion elements 4a, 4b, 4c convert the scattered light Ls emitted while the particles pass through the measurement region M into a voltage.

【0021】なお、レーザ光Laの光軸とフローセル1
の外壁との成す角を、図2に示す所定角度θに設定した
場合には、光電変換素子4a,4b,4cの受光面を、
集光光学系3の光軸に垂直な面に対して所定角度θだけ
傾けてもよい。
The optical axis of the laser light La and the flow cell 1
2 is set to a predetermined angle θ shown in FIG. 2, the light receiving surfaces of the photoelectric conversion elements 4a, 4b, 4c are
It may be inclined by a predetermined angle θ with respect to a plane perpendicular to the optical axis of the condensing optical system 3.

【0022】処理装置5は、粒子が測定領域Mを通過す
る間に3個の光電変換素子4a,4b,4cが夫々出力
する電圧のピーク値(パルス高)Ea,Eb,Ecを検
出するピーク値検出手段6a,6b,6cと、粒子情報
参照テーブルを作成する位置検出手段7から成る。
The processor 5 detects the peak values (pulse heights) Ea, Eb, Ec of the voltages output by the three photoelectric conversion elements 4a, 4b, 4c while the particles pass through the measurement region M. It comprises value detecting means 6a, 6b, 6c and position detecting means 7 for creating a particle information reference table.

【0023】本発明の第1の実施の形態では、電圧検出
手段として、光電変換素子4a,4b,4cが夫々出力
する電圧のピーク値Ea,Eb,Ecを検出するピーク
値検出手段6a,6b,6cを採用しているが、必ずし
もピーク値でなく、例えば光電変換素子4a,4b,4
cの出力電圧を同一のタイミングで検出し、その出力電
圧を後の演算処理に使用してもよい。また、電圧検出手
段として、光電変換素子4a,4b,4cの出力電圧を
所定時間だけ積分して出力してもよい。
In the first embodiment of the present invention, as the voltage detecting means, peak value detecting means 6a, 6b for detecting the peak values Ea, Eb, Ec of the voltages output by the photoelectric conversion elements 4a, 4b, 4c, respectively. , 6c are used, but not necessarily the peak value, for example, photoelectric conversion elements 4a, 4b, 4
The output voltage of c may be detected at the same timing, and the output voltage may be used for the subsequent arithmetic processing. Further, as the voltage detecting means, the output voltages of the photoelectric conversion elements 4a, 4b, 4c may be integrated for a predetermined time and output.

【0024】位置検出手段7は、演算部7aと記憶部7
bを備え、先ず演算部7aにおいて、次の(1)と
(2)の演算処理を行い、その結果を記憶部7bに記憶
して、粒子情報参照テーブルを作成する。 (1)ピーク値検出手段6bの出力電圧Ebに対するピ
ーク値検出手段6aの出力電圧Eaの比Ea/Ebを演
算する。 (2)ピーク値検出手段6bの出力電圧Ebに対するピ
ーク値検出手段6cの出力電圧Ecの比Ec/Ebを演
算する。
The position detecting means 7 comprises a computing section 7a and a storage section 7
First, the calculation unit 7a performs the following calculation processes (1) and (2), stores the result in the storage unit 7b, and creates a particle information reference table. (1) The ratio Ea / Eb of the output voltage Ea of the peak value detecting means 6a to the output voltage Eb of the peak value detecting means 6b is calculated. (2) The ratio Ec / Eb of the output voltage Ec of the peak value detecting means 6c to the output voltage Eb of the peak value detecting means 6b is calculated.

【0025】以上のように構成した本発明の第1の実施
の形態に係る粒子通過位置検出装置の作用について説明
する。予め測定領域Mのレーザ光強度分布を知っておく
必要があるので、測定領域Mのレーザ光強度分布の測定
方法について説明する。
The operation of the particle passage position detecting apparatus according to the first embodiment of the present invention constructed as above will be described. Since it is necessary to know the laser light intensity distribution of the measurement region M in advance, a method of measuring the laser light intensity distribution of the measurement region M will be described.

【0026】図3に示すように、矢印Aの方向から標準
粒子(粒径が同一のもの)を多数含んだ流体をフローセ
ル1に流し込む。このとき、測定領域Mのどの位置を標
準粒子が通過するかによって、光電変換素子アレイ4の
各光電変換素子4a,4b,4cの出力波形は様々なも
のとなる。そして、3個の光電変換素子4a,4b,4
cから成る光電変換素子アレイ4の場合には、主な5通
りの通過パターンが考えられる。
As shown in FIG. 3, a fluid containing a large number of standard particles (having the same particle size) is poured into the flow cell 1 from the direction of arrow A. At this time, the output waveforms of the photoelectric conversion elements 4a, 4b, 4c of the photoelectric conversion element array 4 vary depending on which position in the measurement region M the standard particles pass through. Then, the three photoelectric conversion elements 4a, 4b, 4
In the case of the photoelectric conversion element array 4 composed of c, there are five main possible passage patterns.

【0027】先ず、標準粒子が、図3に示す測定領域M
の中心Mcを通過する場合で、標準粒子による散乱光L
sのスポットSは、図4(a)に示すように、光電変換
素子アレイ4の中央の光電変換素子4bのみに現れる。
このとき、各光電変換素子4a,4b,4cの出力波形
(時間tと電圧Eとの関係)は、図4(b)に示すよう
になる。即ち、光電変換素子4bのみが測定領域Mの中
心Mcをある時間の間(時間t1から時間t2)に通過す
る標準粒子の散乱光Lsに応じた略パルス状の電圧(ピ
ーク値Eb)を出力し、他の光電変換素子4a,4cは
ノイズに応じた略レベル電圧(ピーク値Ea,Ec)し
か出力しない。
First, the standard particles are measured in the measurement area M shown in FIG.
Of light scattered by standard particles when passing through the center Mc of
The spot S of s appears only in the photoelectric conversion element 4b at the center of the photoelectric conversion element array 4, as shown in FIG.
At this time, the output waveforms of the photoelectric conversion elements 4a, 4b, 4c (relationship between time t and voltage E) are as shown in FIG. 4 (b). That is, only the photoelectric conversion element 4b outputs a substantially pulsed voltage (peak value Eb) corresponding to the scattered light Ls of the standard particles passing through the center Mc of the measurement region M for a certain time (time t1 to time t2). However, the other photoelectric conversion elements 4a and 4c output only substantially level voltages (peak values Ea and Ec) corresponding to noise.

【0028】次に、標準粒子が、図3に示す測定領域M
の一端部Msを通過する場合で、標準粒子による散乱光
LsのスポットSは、図5(a)に示すように、光電変
換素子アレイ4の一端の光電変換素子4aのみに現れ
る。このとき、各光電変換素子4a,4b,4cの出力
波形(時間tと電圧Eとの関係)は、図5(b)に示す
ようになる。即ち、光電変換素子4aのみが測定領域M
の一端部Msをある時間の間(時間t3から時間t4)に
通過する標準粒子の散乱光Lsに応じた略パルス状の電
圧(ピーク値Ea)を出力し、他の光電変換素子4b,
4cはノイズに応じた略レベル電圧(ピーク値Eb,E
c)しか出力しない。
Next, the standard particles are measured in the measurement area M shown in FIG.
When passing through the one end Ms of the photoelectric conversion element array 4, the spot S of the scattered light Ls due to the standard particles appears only in the photoelectric conversion element 4a at one end of the photoelectric conversion element array 4, as shown in FIG. At this time, the output waveform of each photoelectric conversion element 4a, 4b, 4c (relationship between time t and voltage E) is as shown in FIG. 5 (b). That is, only the photoelectric conversion element 4a has the measurement area M
Outputs a substantially pulsed voltage (peak value Ea) corresponding to the scattered light Ls of the standard particles that passes through one end Ms of the same for a certain time (time t3 to time t4), and the other photoelectric conversion element 4b,
4c is a substantially level voltage corresponding to noise (peak values Eb, E
Only output c).

【0029】同様に、標準粒子が、図3に示す測定領域
Mの他端部Ms(一端部Msと対称)を通過する場合
で、標準粒子による散乱光LsのスポットSは、図6
(a)に示すように、光電変換素子アレイ4の他端の光
電変換素子4cのみに現れる。このとき、各光電変換素
子4a,4b,4cの出力波形(時間tと電圧Eとの関
係)は、図6(b)に示すようになる。即ち、光電変換
素子4cのみが測定領域Mの他端部Msをある時間の間
(時間t3から時間t4)に通過する標準粒子の散乱光L
sに応じた略パルス状の電圧(ピーク値Ec)を出力
し、他の光電変換素子4a,4bはノイズに応じた略レ
ベル電圧(ピーク値Ea,Eb)しか出力しない。
Similarly, when the standard particles pass through the other end Ms (symmetrical to one end Ms) of the measurement region M shown in FIG. 3, the spot S of the scattered light Ls by the standard particles is as shown in FIG.
As shown in (a), it appears only in the photoelectric conversion element 4c at the other end of the photoelectric conversion element array 4. At this time, the output waveforms (relationship between time t and voltage E) of the photoelectric conversion elements 4a, 4b, 4c are as shown in FIG. 6 (b). That is, only the photoelectric conversion element 4c passes through the other end Ms of the measurement region M for a certain time (time t3 to time t4), and the scattered light L of the standard particles is generated.
A substantially pulsed voltage (peak value Ec) corresponding to s is output, and the other photoelectric conversion elements 4a and 4b output only a substantially level voltage (peak value Ea, Eb) corresponding to noise.

【0030】更に、標準粒子が、図3に示す測定領域M
の一経路Mmを通過する場合で、標準粒子による散乱光
LsのスポットSは、図7(a)に示すように、光電変
換素子4aと光電変換素子4bの境界にまたがって現れ
る。このとき、各光電変換素子4a,4b,4cの出力
波形(時間tと電圧Eとの関係)は、図7(b)に示す
ようになる。即ち、光電変換素子4a,4bが測定領域
Mの一経路Mmをある時間の間(時間t5から時間t6)
に通過する標準粒子の散乱光Lsに応じた略パルス状の
電圧(ピーク値Ea,Eb)を出力し、光電変換素子4
cはノイズに応じた略レベル電圧(ピーク値Ec)しか
出力しない。
Further, the standard particles are the measurement area M shown in FIG.
When passing through one path Mm, the spot S of the scattered light Ls due to the standard particles appears across the boundary between the photoelectric conversion elements 4a and 4b as shown in FIG. 7 (a). At this time, the output waveform of each photoelectric conversion element 4a, 4b, 4c (relationship between time t and voltage E) is as shown in FIG. 7 (b). That is, the photoelectric conversion elements 4a and 4b are in one path Mm of the measurement region M for a certain time (time t5 to time t6).
A voltage (peak value Ea, Eb) having a substantially pulse shape corresponding to the scattered light Ls of the standard particles passing through is output, and the photoelectric conversion element 4
c outputs only a level voltage (peak value Ec) corresponding to noise.

【0031】同様に、標準粒子が、図3に示す測定領域
Mの他経路Mm(一経路Mmと対称)を通過する場合
で、標準粒子による散乱光LsのスポットSは、図8
(a)に示すように、光電変換素子4bと光電変換素子
4cの境界にまたがって現れる。このとき、各光電変換
素子4a,4b,4cの出力波形(時間tと電圧Eとの
関係)は、図8(b)に示すようになる。即ち、光電変
換素子4b,4cが測定領域Mの他経路Mmをある時間
の間(時間t5から時間t6)に通過する標準粒子の散乱
光Lsに応じた略パルス状の電圧(ピーク値Eb,E
c)を出力し、光電変換素子4aはノイズに応じた略レ
ベル電圧(ピーク値Ea)しか出力しない。
Similarly, when the standard particles pass through the other path Mm (symmetrical to the one path Mm) of the measurement region M shown in FIG. 3, the spot S of the scattered light Ls by the standard particles is shown in FIG.
As shown in (a), it appears straddling the boundary between the photoelectric conversion elements 4b and 4c. At this time, the output waveform of each photoelectric conversion element 4a, 4b, 4c (relationship between time t and voltage E) is as shown in FIG. 8 (b). That is, the photoelectric conversion elements 4b and 4c pass through the other path Mm of the measurement region M for a certain time (time t5 to time t6) and have a substantially pulsed voltage (peak value Eb, corresponding to the scattered light Ls of the standard particles). E
c) is output, and the photoelectric conversion element 4a outputs only a substantially level voltage (peak value Ea) corresponding to noise.

【0032】そして、位置検出手段7では、図4(a)
に示すように、中央の光電変換素子4bのみにスポット
Sが現れた場合、演算部7aにおいて、光電変換素子4
bのピーク電圧Ebに対する光電変換素子4aのピーク
電圧Eaの比Ea/Ebを演算し、Ea<Ebであるか
ら、比Ea/Ebとしてほぼゼロ(Ea/Eb≒0)の
値を出力し、記憶部7bに記憶する。また、演算部7a
において、光電変換素子4bのピーク電圧Ebに対する
光電変換素子4cのピーク電圧Ecの比Ec/Ebを演
算し、Ec<Ebであるから、比Ec/Ebとしてほぼ
ゼロ(Ec/Eb≒0)の値を出力し、記憶部7bに記
憶する。
Then, in the position detecting means 7, FIG.
When the spot S appears only in the central photoelectric conversion element 4b, as shown in FIG.
The ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb of b is calculated, and since Ea <Eb, a value of almost zero (Ea / Eb≈0) is output as the ratio Ea / Eb, It is stored in the storage unit 7b. Also, the calculation unit 7a
In, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 4c to the peak voltage Eb of the photoelectric conversion element 4b is calculated, and since Ec <Eb, the ratio Ec / Eb is almost zero (Ec / Eb≈0). The value is output and stored in the storage unit 7b.

【0033】また、位置検出手段7では、図5(a)に
示すように、一端の光電変換素子4aのみにスポットS
が現れた場合、演算部7aにおいて、光電変換素子4b
のピーク電圧Ebに対する光電変換素子4aのピーク電
圧Eaの比Ea/Ebを演算し、Ea>Ebであるか
ら、比Ea/Ebとして非常に大きな値(Ea/Eb≒
∞)を出力し、記憶部7bに記憶する。同様に、光電変
換素子4bのピーク電圧Ebに対する光電変換素子4c
のピーク電圧Ecの比Ec/Ebを演算し、Ec≒Eb
であるから、比Ea/Ebとして約1(Ea/Eb≒
1)の値を出力し、記憶部7bに記憶する。
In the position detecting means 7, as shown in FIG. 5A, the spot S is formed only on the photoelectric conversion element 4a at one end.
, Appears in the operation unit 7a, the photoelectric conversion element 4b
The ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb is calculated, and since Ea> Eb, a very large value (Ea / Eb≈Ea / Eb≈
∞) is output and stored in the storage unit 7b. Similarly, the photoelectric conversion element 4c corresponding to the peak voltage Eb of the photoelectric conversion element 4b
Of the peak voltage Ec of Ec / Eb is calculated, and Ec≈Eb
Therefore, the ratio Ea / Eb is about 1 (Ea / Eb≈
The value of 1) is output and stored in the storage unit 7b.

【0034】また、位置検出手段7では、図6(a)に
示すように、他端の光電変換素子4cのみにスポットS
が現れた場合、演算部7aにおいて、光電変換素子4b
のピーク電圧Ebに対する光電変換素子4aのピーク電
圧Eaの比Ea/Ebを演算し、Ea≒Ebであるか
ら、比Ea/Ebとして約1(Ea/Eb≒1)の値を
出力し、記憶部7bに記憶する。同様に、光電変換素子
4bのピーク電圧Ebに対する光電変換素子4cのピー
ク電圧Ecの比Ec/Ebを演算し、Ec>Ebである
から、比Ec/Ebとして非常に大きな値(Ec/Eb
≒∞)を出力し、記憶部7bに記憶する。
In the position detecting means 7, as shown in FIG. 6A, the spot S is formed only on the photoelectric conversion element 4c at the other end.
, Appears in the operation unit 7a, the photoelectric conversion element 4b
The ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb is calculated, and since Ea≈Eb, a value of about 1 (Ea / Eb≈1) is output as the ratio Ea / Eb and stored. It is stored in the section 7b. Similarly, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 4c to the peak voltage Eb of the photoelectric conversion element 4b is calculated. Since Ec> Eb, the ratio Ec / Eb is a very large value (Ec / Eb).
≈∞) is output and stored in the storage unit 7b.

【0035】次に、位置検出手段7では、図7(a)に
示すように、光電変換素子4aと光電変換素子4bの境
界にスポットSがまたがって現れた場合、演算部7aに
おいて、光電変換素子4bのピーク電圧Ebに対する光
電変換素子4aのピーク電圧Eaの比Ea/Ebを演算
し、Ea≒Ebであるから、比Ea/Ebとして約1
(Ea/Eb≒1)の値を出力し、記憶部7bに記憶す
る。同様に、光電変換素子4bのピーク電圧Ebに対す
る光電変換素子4cのピーク電圧Ecの比Ec/Ebを
演算し、Ec<Ebであるから、比Ec/Ebとしてほ
ぼゼロ(Ec/Eb≒0)の値を出力し、記憶部7bに
記憶する。
Next, in the position detecting means 7, when the spot S appears across the boundary between the photoelectric conversion elements 4a and 4b as shown in FIG. 7 (a), the photoelectric conversion is performed in the calculation section 7a. The ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb of the element 4b is calculated. Since Ea≈Eb, the ratio Ea / Eb is about 1
The value of (Ea / Eb≈1) is output and stored in the storage unit 7b. Similarly, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 4c to the peak voltage Eb of the photoelectric conversion element 4b is calculated, and since Ec <Eb, the ratio Ec / Eb is almost zero (Ec / Eb≈0). The value of is output and stored in the storage unit 7b.

【0036】また、位置検出手段7では、図8(a)に
示すように、光電変換素子4bと光電変換素子4cの境
界にスポットSがまたがって現れた場合、演算部7aに
おいて、光電変換素子4bのピーク電圧Ebに対する光
電変換素子4aのピーク電圧Eaの比Ea/Ebを演算
し、Ea<Ebであるから、比Ea/Ebとしてほぼゼ
ロ(Ec/Eb≒0)の値を出力し、記憶部7bに記憶
する。同様に、光電変換素子4bのピーク電圧Ebに対
する光電変換素子4cのピーク電圧Ecの比Ec/Eb
を演算し、Ec≒Ebであるから、比Ec/Ebとして
約1(Ec/Eb≒1)の値を出力し、記憶部7bに記
憶する。
Further, in the position detecting means 7, as shown in FIG. 8A, when the spot S appears across the boundary between the photoelectric conversion elements 4b and 4c as shown in FIG. The ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb of 4b is calculated, and since Ea <Eb, a value of almost zero (Ec / Eb≈0) is output as the ratio Ea / Eb, It is stored in the storage unit 7b. Similarly, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 4c to the peak voltage Eb of the photoelectric conversion element 4b.
Is calculated, and since Ec≈Eb, a value of about 1 (Ec / Eb≈1) is output as the ratio Ec / Eb and stored in the storage unit 7b.

【0037】なお、基準とする電圧は、光電変換素子4
bのピーク電圧Eb以外の他の光電変換素子4a,4c
のピーク電圧Ea,Ecでもよいし、また各ピーク電圧
の和(Ea+Eb+Ec)でもよい。要は、光電変換素
子4a,4b,4cのピーク電圧の絶対値ではなく、基
準電圧に対する各光電変換素子4a,4b,4cのピー
ク電圧の比(割合)から標準粒子による散乱光Lsのス
ポットSの位置を求める方が確度が高いからである。
The reference voltage is the photoelectric conversion element 4
b other than the peak voltage Eb of photoelectric conversion elements 4a, 4c
The peak voltages Ea and Ec may be the sum of the peak voltages (Ea + Eb + Ec). In short, not the absolute value of the peak voltage of the photoelectric conversion elements 4a, 4b, 4c but the ratio (ratio) of the peak voltage of each photoelectric conversion element 4a, 4b, 4c to the reference voltage is used to determine the spot S of the scattered light Ls by the standard particles. This is because it is more accurate to find the position of.

【0038】以上のような5通りの場合について、図9
に示すように、基準電圧を光電変換素子4bのピーク電
圧Ebとした場合の粒子情報参照テーブルが作成でき
る。従って、光電変換素子4bのピーク電圧Ebに対す
る光電変換素子4aのピーク電圧Eaの比Ea/Eb
と、光電変換素子4bのピーク電圧Ebに対する光電変
換素子4cのピーク電圧Ecの比Ec/Ebが分かれ
ば、粒子情報参照テーブルを参照することにより、測定
領域Mにおける粒子のY方向の通過位置を5通りの中か
ら識別することができる。
FIG. 9 shows the above five cases.
As shown in, the particle information reference table can be created when the reference voltage is the peak voltage Eb of the photoelectric conversion element 4b. Therefore, the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb of the photoelectric conversion element 4b.
And the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 4c to the peak voltage Eb of the photoelectric conversion element 4b, the particle information reference table is referred to thereby determine the passage position of the particle in the measurement region M in the Y direction. It can be identified from 5 types.

【0039】また、上記した5通りの通過パターン以外
で、光電変換素子4aと光電変換素子4bの境界又は光
電変換素子4bと光電変換素子4cの境界にスポットS
が均等でなくまたがって現れるような測定領域Mの経路
を通過した場合であっても、光電変換素子4bのピーク
電圧Ebに対する光電変換素子4aのピーク電圧Eaの
比Ea/Ebと、光電変換素子4bのピーク電圧Ebに
対する光電変換素子4cのピーク電圧Ecの比Ec/E
bが分かれば、比Ea/Ebの値と比Ec/Ebの値を
粒子情報参照テーブルに当てはめることにより、測定領
域Mにおける粒子のY方向の通過位置を識別することが
できる。
In addition to the above-mentioned five passage patterns, spots S are formed at the boundary between the photoelectric conversion element 4a and the photoelectric conversion element 4b or at the boundary between the photoelectric conversion element 4b and the photoelectric conversion element 4c.
Even when passing through the path of the measurement region M that is not uniform and appears across the photoelectric conversion element 4a and the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 4a to the peak voltage Eb of the photoelectric conversion element 4b, Ratio of peak voltage Ec of photoelectric conversion element 4c to peak voltage Eb of 4b Ec / E
If b is known, the passing position of the particle in the measurement region M in the Y direction can be identified by applying the value of the ratio Ea / Eb and the value of the ratio Ec / Eb to the particle information reference table.

【0040】本発明の第2の実施の形態に係る粒子通過
位置検出装置は、図10に示すように、フローセル1
1、レーザ光源12、集光光学系13、光検出手段14
及び処理装置15から成る。ここで、フローセル11、
レーザ光源12、集光光学系13は、図1に示すものと
同様の構成であるので説明は省略する。
The particle passage position detecting device according to the second embodiment of the present invention, as shown in FIG.
1, laser light source 12, condensing optical system 13, light detection means 14
And a processing device 15. Here, the flow cell 11,
The laser light source 12 and the condensing optical system 13 have the same configurations as those shown in FIG.

【0041】光検出手段14は、縦(Y方向)と横(Z
方向)が3個×3個のマトリックス状の光電変換素子D
11,D12,D13,D21,……D33から成り、各受光面が
流路11aの中心軸(X方向)に垂直なY・Z平面を形
成している。
The light detecting means 14 has a vertical (Y direction) and a horizontal (Z direction).
Direction) 3 × 3 matrix photoelectric conversion elements D
11 , D 12 , D 13 , D 21 , ... D 33 , and each light-receiving surface forms a YZ plane perpendicular to the central axis (X direction) of the flow path 11a.

【0042】処理装置15は、3個×3個の光電変換素
子D11,D12,D13,D21,……D33の夫々の出力電圧
のピーク値E11,E12,E13,E21,……E33を検出す
るピーク値検出手段16a,16b,16cと、ピーク
値E11,E12,E13,E21,……E33から粒子の位置を
検出する位置検出手段17から成る。
The processing device 15 has peak values E 11 , E 12 , E 13 , of output voltages of the photoelectric conversion elements D 11 , D 12 , D 13 , D 21 , ... D 33 of 3 × 3. E 21, ...... peak value detecting means 16a for detecting the E 33, 16b, 16c and the peak value E 11, E 12, E 13 , E 21, position detecting means for detecting the position of the particle from ...... E 33 17 Consists of.

【0043】ピーク値検出手段16aは光電変換素子D
11,D12,D13の出力電圧を時分割でサンプリングして
そのピーク値E11,E12,E13を検出し、ピーク値検出
手段16bは光電変換素子D21,D22,D23の出力電圧
を時分割でサンプリングしてそのピーク値E21,E22
23を検出し、ピーク値検出手段16cは光電変換素子
31,D32,D33の出力電圧を時分割でサンプリングし
てピーク値E31,E32,E33を検出する。
The peak value detecting means 16a is a photoelectric conversion element D.
The output voltages of 11 , D 12 , and D 13 are sampled in a time division manner to detect their peak values E 11 , E 12 , and E 13 , and the peak value detecting means 16b detects the photoelectric conversion elements D 21 , D 22 , and D 23 . The output voltage is sampled in a time division manner and its peak values E 21 , E 22 ,
Detecting the E 23, a peak value detecting means 16c detects the photoelectric conversion element D 31, D 32, the peak value is sampled in a time division output voltage of the D 33 E 31, E 32, E 33.

【0044】なお、ピーク値検出手段を光電変換素子D
11,D12,D13,D21,……D33の個数分設け、測定領
域Mをある時間で通過する粒子の散乱光Lsによる出力
電圧を常時サンプリングしてピーク値を検出してもよ
い。また、電圧検出手段として、必ずしもピーク値でな
く、例えば光電変換素子D11,D12,D13,D21,……
33の出力電圧を同一のタイミングで検出してもよい。
また、電圧検出手段として、光電変換素子4a,4b,
4cの出力電圧を所定時間だけ積分して出力してもよ
い。
The peak value detecting means is a photoelectric conversion element D.
11 , D 12 , D 13 , D 21 , ... D 33 may be provided and the peak value may be detected by constantly sampling the output voltage of the scattered light Ls of the particles passing through the measurement region M at a certain time. . Further, the voltage detecting means is not necessarily a peak value, but may be, for example, photoelectric conversion elements D 11 , D 12 , D 13 , D 21 ,.
The output voltage of D 33 may be detected at the same timing.
Further, as voltage detecting means, photoelectric conversion elements 4a, 4b,
The output voltage of 4c may be integrated and output for a predetermined time.

【0045】位置検出手段17は、演算部17aと記憶
部17bを備え、先ず演算部17aにおいて、ピーク値
検出手段16a,16b,16cが検出したピーク値E
11,E12,E13,E21,……E33の中から一の電圧(例
えば、ピーク値E22)を選択し、この電圧を基準にして
他のピーク値との比(E11/E22、E12/E22……)を
演算し、その結果を記憶部17bに記憶して、図9と同
様な粒子情報参照テーブルを作成する。
The position detecting means 17 comprises a calculating part 17a and a storage part 17b. First, in the calculating part 17a, the peak value E detected by the peak value detecting means 16a, 16b, 16c.
One of the voltages (for example, peak value E 22 ) is selected from 11 , E 12 , E 13 , E 21 , ... E 33 , and the ratio of this voltage to other peak values (E 11 / E 22, E 12 / E 22 ......) is calculated, and then stores the result in the storage unit 17b, to create a particle information reference table similar to FIG.

【0046】また、演算部17aにおいて、ピーク値検
出手段16a,16b,16cが検出したピーク値
11,E12,E13,E21,……E33の中から最も大きい
ピーク値を選択し、その結果を記憶部17bに記憶して
もよい。
Further, in the calculation unit 17a, the largest peak value is selected from the peak values E 11 , E 12 , E 13 , E 21 , ... E 33 detected by the peak value detecting means 16a, 16b, 16c. The result may be stored in the storage unit 17b.

【0047】以上のように構成した本発明の第2の実施
の形態に係る粒子通過位置検出装置の作用について説明
する。図10に示すように、矢印Aの方向から粒子を含
んだ流体をフローセル11に流し込む。このとき、測定
領域Mのどの位置を粒子が通過するかによって、光検出
手段14の光電変換素子D11,D12,D13,D21,……
33の出力波形は様々なものとなる。
The operation of the particle passage position detecting device according to the second embodiment of the present invention having the above structure will be described. As shown in FIG. 10, a fluid containing particles is poured into the flow cell 11 from the direction of arrow A. At this time, the photoelectric conversion elements D 11 , D 12 , D 13 , D 21 , ... Of the light detecting means 14 are selected depending on which position of the measurement area M the particles pass through.
There are various output waveforms of D 33 .

【0048】例えば、粒子が光検出手段14の中で光電
変換素子D22の受光面に対応する測定領域Mの経路を通
過すると、ピーク値検出手段16a,16b,16cは
粒子が測定領域Mを通過する間、粒子の散乱光Lsに応
じた光電変換素子D11,D12,D13,D21,……D33
出力電圧をサンプリングしてピーク値を検出する。
For example, when the particles pass through the path of the measurement area M corresponding to the light receiving surface of the photoelectric conversion element D 22 in the light detection means 14, the peak value detection means 16a, 16b, 16c cause the particles to pass through the measurement area M. While passing, the output voltage of the photoelectric conversion elements D 11 , D 12 , D 13 , D 21 , ... D 33 according to the scattered light Ls of the particles is sampled to detect the peak value.

【0049】この場合に、測定領域Mのレーザ光強度
は、中心部が最も強く、中心部からずれて端部に行くほ
ど弱くなるという分布(ほぼガウス分布)をしているの
で、粒子はレーザ光強度の弱い部分から中心部の強い部
分を通り再び弱い部分を通るため、光電変換素子D22
みが略パルス状の電圧を出力し、他の光電変換素子は、
ノイズに応じたレベル電圧しか出力しない。
In this case, the laser light intensity in the measurement region M has a distribution that the intensity is strongest in the central part and weakens toward the end part deviating from the central part (almost Gaussian distribution). Since the light intensity weak portion passes through the strong central portion and the weak portion again, only the photoelectric conversion element D 22 outputs a substantially pulsed voltage, and the other photoelectric conversion elements are
Only the level voltage corresponding to the noise is output.

【0050】従って、光電変換素子D22のピーク値E22
を基準にした場合に、他のピーク値との比(E11
22、E12/E22……)が分かれば、粒子情報参照テー
ブルを参照することにより、測定領域Mにおける粒子の
通過位置を2次元(Y・Z平面)で識別することができ
る。
[0050] Therefore, the peak value of the photoelectric conversion element D 22 E 22
When compared with other peak values, the ratio (E 11 /
Knowing the E 22, E 12 / E 22 ......), can be identified by referring to the reference particle information table, the passing position of the particle in the measurement region M 2-dimensional (Y · Z plane).

【0051】本発明の第3の実施の形態に係る粒子通過
位置検出装置は、図11に示すように、フローセル2
1、レーザ光源22、集光光学系23、トラップ20、
光電変換素子アレイ24及び処理装置25から成る。
The particle passage position detecting apparatus according to the third embodiment of the present invention is, as shown in FIG.
1, laser light source 22, condensing optical system 23, trap 20,
It is composed of a photoelectric conversion element array 24 and a processing device 25.

【0052】フローセル21は、透明部材から成り、所
定長さの直線流路21a(Y方向)を有する。ここで
は、フローセル21の断面形状は角筒形状としている。
所定の長さの直線流路21aを設けた理由は、本発明の
第1の実施の形態に係る粒子通過位置検出装置のフロー
セル1の場合と同様である。
The flow cell 21 is made of a transparent member and has a linear flow path 21a (Y direction) of a predetermined length. Here, the cross-sectional shape of the flow cell 21 is a rectangular tube shape.
The reason for providing the linear flow path 21a having a predetermined length is the same as in the case of the flow cell 1 of the particle passage position detecting apparatus according to the first embodiment of the present invention.

【0053】レーザ光源22は、フローセル21の直線
流路21aの所定の箇所にレーザ光Laを照射して照射
領域を形成する。ここで、レーザ光Laの光軸(X方
向)と直線流路21a(Y方向)は交差している。
The laser light source 22 irradiates a predetermined portion of the linear flow path 21a of the flow cell 21 with the laser light La to form an irradiation area. Here, the optical axis (X direction) of the laser beam La and the linear flow path 21a (Y direction) intersect.

【0054】集光光学系23は、レーザ光源22の光軸
と一致する光軸(X方向)を有し、図12に示す照射領
域内の所定の領域M(以下、測定領域Mと呼ぶ)におい
て発生する散乱光Lsを集光する機能を備える。
The condensing optical system 23 has an optical axis (X direction) that coincides with the optical axis of the laser light source 22, and has a predetermined area M (hereinafter referred to as a measurement area M) in the irradiation area shown in FIG. It has a function of condensing the scattered light Ls generated in.

【0055】光電変換素子アレイ24は、3個の光電変
換素子24a,24b,24cから成り、各受光面が集
光光学系23の光軸(X方向)に垂直で、且つ流路の中
心軸(Y方向)とレーザ光軸(X方向)に垂直なZ方向
に隣接して設けられている。光電変換素子24a,24
b,24cは、粒子が測定領域Mを通過する間に発する
散乱光Lsを電圧に変換する。
The photoelectric conversion element array 24 is composed of three photoelectric conversion elements 24a, 24b and 24c, each light receiving surface being perpendicular to the optical axis (X direction) of the condensing optical system 23 and the central axis of the flow path. They are provided adjacent to each other in the Z direction perpendicular to the (Y direction) and the laser optical axis (X direction). Photoelectric conversion elements 24a, 24
b and 24c convert the scattered light Ls emitted while the particles pass through the measurement region M into a voltage.

【0056】集光光学系23の光軸上に位置するトラッ
プ20は、レーザ光源22の光源光Laが直接、光電変
換素子アレイ24に入射するのを阻止する。これによ
り、光電変換素子24には、流路21a内を通過する粒
子が発する散乱光Lsのみが入射することになる。
The trap 20 located on the optical axis of the condensing optical system 23 blocks the light source light La of the laser light source 22 from directly entering the photoelectric conversion element array 24. As a result, only the scattered light Ls emitted by the particles passing through the flow path 21a is incident on the photoelectric conversion element 24.

【0057】処理装置25は、粒子が測定領域Mを通過
する間に3個の光電変換素子24a,24b,24cが
夫々出力する電圧のピーク値(パルス高)Ea,Eb,
Ecを検出するピーク値検出手段26a,26b,26
cと、粒子情報参照テーブルを作成する位置検出手段2
7から成る。
The processing device 25 includes the peak values (pulse heights) Ea, Eb, of the voltages output by the three photoelectric conversion elements 24a, 24b, 24c while the particles pass through the measurement region M.
Peak value detecting means 26a, 26b, 26 for detecting Ec
c and position detecting means 2 for creating a particle information reference table
It consists of 7.

【0058】本発明の第3の実施の形態では、電圧検出
手段として、光電変換素子24a,24b,24cが夫
々出力する電圧のピーク値Ea,Eb,Ecを検出する
ピーク値検出手段26a,26b,26cを採用してい
るが、必ずしもピーク値でなく、例えば光電変換素子2
4a,24b,24cの出力電圧を同一のタイミングで
検出し、その出力電圧を後の演算処理に使用してもよ
い。また、電圧検出手段として、光電変換素子24a,
24b,24cの出力電圧を所定時間だけ積分して出力
してもよい。
In the third embodiment of the present invention, as voltage detecting means, peak value detecting means 26a, 26b for detecting peak values Ea, Eb, Ec of the voltages output by the photoelectric conversion elements 24a, 24b, 24c, respectively. , 26c are used, but not necessarily the peak value, for example, the photoelectric conversion element 2
The output voltages of 4a, 24b, and 24c may be detected at the same timing, and the output voltages may be used for the subsequent arithmetic processing. Further, as the voltage detecting means, the photoelectric conversion element 24a,
The output voltages of 24b and 24c may be integrated and output for a predetermined time.

【0059】位置検出手段27は、演算部27aと記憶
部27bを備え、先ず演算部27aにおいて、次の
(1)と(2)の演算処理を行い、その結果を記憶部2
7bに記憶して、粒子情報参照テーブルを作成する。 (1)ピーク値検出手段26bの出力電圧Ebに対する
ピーク値検出手段26aの出力電圧Eaの比Ea/Eb
を演算する。 (2)ピーク値検出手段26bの出力電圧Ebに対する
ピーク値検出手段26cの出力電圧Ecの比Ec/Eb
を演算する。
The position detecting means 27 comprises an arithmetic unit 27a and a storage unit 27b. First, the arithmetic unit 27a performs the following arithmetic processes (1) and (2), and the result is stored in the memory unit 2
7b to create a particle information reference table. (1) Ratio Ea / Eb of output voltage Ea of peak value detecting means 26a to output voltage Eb of peak value detecting means 26b
Is calculated. (2) Ratio Ec / Eb of the output voltage Ec of the peak value detecting means 26c to the output voltage Eb of the peak value detecting means 26b.
Is calculated.

【0060】以上のように構成した本発明の第3の実施
の形態に係る粒子通過位置検出装置の作用について説明
する。図12に示すように、矢印Aの方向から粒子を含
んだ流体をフローセル21に流し込む。このとき、測定
領域Mのどの位置を粒子が通過するかによって、光電変
換素子アレイ24の各光電変換素子24a,24b,2
4c出力波形は様々なものとなる。そして、3個の光電
変換素子24a,24b,24cから成る光電変換素子
アレイ24の場合には、主な5通りの通過パターンが考
えられる。
The operation of the particle passage position detecting device according to the third embodiment of the present invention having the above structure will be described. As shown in FIG. 12, a fluid containing particles is poured into the flow cell 21 from the direction of arrow A. At this time, each photoelectric conversion element 24a, 24b, 2 of the photoelectric conversion element array 24 depends on which position in the measurement region M the particle passes through.
The 4c output waveform is various. In the case of the photoelectric conversion element array 24 including the three photoelectric conversion elements 24a, 24b, and 24c, five main passage patterns can be considered.

【0061】先ず、標準粒子が、図12に示す測定領域
Mの中心Mcを通過する場合で、標準粒子による散乱光
LsのスポットSは、図13(a)に示すように、光電
変換素子アレイ24の中央の光電変換素子24bのみに
現れ、矢印方向に移動する。このとき、各光電変換素子
24a,24b,24cの出力波形(時間tと電圧Eと
の関係)は、図13(b)に示すようになる。即ち、光
電変換素子24bのみが測定領域Mの中心Mcをある時
間の間(時間t1から時間t2)に通過する標準粒子の散
乱光Lsに応じた略パルス状の電圧(ピーク値Eb)を
出力し、他の光電変換素子24a,24cはノイズに応
じた略レベル電圧(ピーク値Ea,Ec)しか出力しな
い。
First, when the standard particles pass through the center Mc of the measurement region M shown in FIG. 12, the spot S of the scattered light Ls by the standard particles has a photoelectric conversion element array as shown in FIG. 13 (a). It appears only in the photoelectric conversion element 24b at the center of 24, and moves in the arrow direction. At this time, the output waveform of each photoelectric conversion element 24a, 24b, 24c (relationship between time t and voltage E) is as shown in FIG. 13 (b). That is, only the photoelectric conversion element 24b outputs a substantially pulsed voltage (peak value Eb) corresponding to the scattered light Ls of the standard particles passing through the center Mc of the measurement region M for a certain time (time t1 to time t2). However, the other photoelectric conversion elements 24a and 24c output only substantially level voltages (peak values Ea and Ec) corresponding to noise.

【0062】次に、標準粒子が、図12に示す測定領域
Mの一端部Msを通過する場合で、標準粒子による散乱
光LsのスポットSは、図14(a)に示すように、光
電変換素子アレイ24の一端の光電変換素子24aのみ
に現れ、矢印方向に移動する。このとき、各光電変換素
子24a,24b,24cの出力波形(時間tと電圧E
との関係)は、図14(b)に示すようになる。即ち、
光電変換素子24aのみが測定領域Mの一端部Msをあ
る時間の間(時間t3から時間t4)に通過する標準粒子
の散乱光Lsに応じた略パルス状の電圧(ピーク値E
a)を出力し、他の光電変換素子24b,24cはノイ
ズに応じた略レベル電圧(ピーク値Eb,Ec)しか出
力しない。
Next, when the standard particles pass one end Ms of the measurement region M shown in FIG. 12, the spot S of the scattered light Ls by the standard particles is photoelectrically converted as shown in FIG. 14 (a). It appears only in the photoelectric conversion element 24a at one end of the element array 24, and moves in the arrow direction. At this time, the output waveform of each photoelectric conversion element 24a, 24b, 24c (time t and voltage E
(Relationship with) is as shown in FIG. That is,
Only the photoelectric conversion element 24a passes through the one end Ms of the measurement region M for a certain time (time t3 to time t4) and has a substantially pulsed voltage (peak value E corresponding to the scattered light Ls of the standard particles).
a) is output, and the other photoelectric conversion elements 24b and 24c output only substantially level voltages (peak values Eb and Ec) corresponding to noise.

【0063】同様に、標準粒子が、図12に示す測定領
域Mの他端部Ms(一端部Msと対称の位置)を通過す
る場合で、標準粒子による散乱光LsのスポットSは、
図15(a)に示すように、光電変換素子アレイ24の
他端の光電変換素子24cのみに現れ、矢印方向に移動
する。このとき、各光電変換素子24a,24b,24
cの出力波形(時間tと電圧Eとの関係)は、図15
(b)に示すようになる。即ち、光電変換素子24cの
みが測定領域Mの他端部Msをある時間の間(時間t3
から時間t4)に通過する標準粒子の散乱光Lsに応じ
た略パルス状の電圧(ピーク値Ec)を出力し、他の光
電変換素子24a,24bはノイズに応じた略レベル電
圧(ピーク値Ea,Eb)しか出力しない。
Similarly, when the standard particle passes through the other end Ms (position symmetrical to the one end Ms) of the measurement area M shown in FIG. 12, the spot S of the scattered light Ls by the standard particle is
As shown in FIG. 15A, it appears only in the photoelectric conversion element 24c at the other end of the photoelectric conversion element array 24, and moves in the arrow direction. At this time, each photoelectric conversion element 24a, 24b, 24
The output waveform of c (relationship between time t and voltage E) is shown in FIG.
As shown in (b). That is, only the photoelectric conversion element 24c moves the other end portion Ms of the measurement region M for a certain time (time t3
To a time t4), a substantially pulse-shaped voltage (peak value Ec) corresponding to the scattered light Ls of the standard particles is output, and the other photoelectric conversion elements 24a and 24b generate a substantially level voltage (peak value Ea) corresponding to noise. , Eb) only.

【0064】更に、標準粒子が、図12に示す測定領域
Mの一経路Mmを通過する場合で、標準粒子による散乱
光LsのスポットSは、図16(a)に示すように、光
電変換素子24aと光電変換素子24bの境界にまたが
って現れ、矢印方向に移動する。このとき、各光電変換
素子24a,24b,24cの出力波形(時間tと電圧
Eとの関係)は、図16(b)に示すようになる。即
ち、光電変換素子24a,24bが測定領域Mの一経路
Mmをある時間の間(時間t5から時間t6)に通過する
標準粒子の散乱光Lsに応じた略パルス状の電圧(ピー
ク値Ea,Eb)を出力し、光電変換素子24cはノイ
ズに応じた略レベル電圧(ピーク値Ec)しか出力しな
い。
Further, when the standard particles pass through one path Mm of the measurement region M shown in FIG. 12, the spot S of the scattered light Ls by the standard particles is, as shown in FIG. 16 (a), a photoelectric conversion element. It appears across the boundary between 24a and the photoelectric conversion element 24b, and moves in the direction of the arrow. At this time, the output waveforms (relationship between time t and voltage E) of the photoelectric conversion elements 24a, 24b, 24c are as shown in FIG. 16 (b). That is, the photoelectric conversion elements 24a and 24b pass through the one path Mm of the measurement region M for a certain time (time t5 to time t6) and have a substantially pulsed voltage (peak value Ea, corresponding to the scattered light Ls of the standard particles). Eb) is output, and the photoelectric conversion element 24c outputs only a substantially level voltage (peak value Ec) corresponding to noise.

【0065】同様に、標準粒子が、図12に示す測定領
域Mの他経路Mm(一経路Mmと対称の位置)を通過す
る場合で、標準粒子による散乱光LsのスポットSは、
図17(a)に示すように、光電変換素子24bと光電
変換素子24cの境界にまたがって現れ、矢印方向に移
動する。このとき、各光電変換素子24a,24b,2
4cの出力波形(時間tと電圧Eとの関係)は、図17
(b)に示すようになる。即ち、光電変換素子24b,
24cが測定領域Mの他経路Mmをある時間の間(時間
t5から時間t6)に通過する標準粒子の散乱光Lsに応
じた略パルス状の電圧(ピーク値Eb,Ec)を出力
し、光電変換素子24aはノイズに応じた略レベル電圧
(ピーク値Ea)しか出力しない。
Similarly, when the standard particle passes through the other path Mm (position symmetrical to the one path Mm) of the measurement region M shown in FIG. 12, the spot S of the scattered light Ls by the standard particle is
As shown in FIG. 17A, it appears across the boundary between the photoelectric conversion elements 24b and 24c and moves in the arrow direction. At this time, each photoelectric conversion element 24a, 24b, 2
The output waveform of 4c (relationship between time t and voltage E) is shown in FIG.
As shown in (b). That is, the photoelectric conversion element 24b,
24c outputs a substantially pulse-shaped voltage (peak values Eb, Ec) corresponding to the scattered light Ls of the standard particles passing through the other path Mm of the measurement region M for a certain time (time t5 to time t6), and photoelectric The conversion element 24a outputs only a substantially level voltage (peak value Ea) according to noise.

【0066】そして、位置検出手段27では、図13
(a)に示すように、中央の光電変換素子24bのみに
スポットSが現れた場合、演算部17aにおいて、光電
変換素子24bのピーク電圧Ebに対する光電変換素子
24aのピーク電圧Eaの比Ea/Ebを演算し、Ea
<Ebであるから、比Ea/Ebとしてほぼゼロ(Ea
/Eb≒0)の値を出力し、記憶部27bに記憶する。
また、演算部27aにおいて、光電変換素子24bのピ
ーク電圧Ebに対する光電変換素子24cのピーク電圧
Ecの比Ec/Ebを演算し、Ec<Ebであるから、
比Ec/Ebとしてほぼゼロ(Ec/Eb≒0)の値を
出力し、記憶部27bに記憶する。
Then, in the position detecting means 27, FIG.
As shown in (a), when the spot S appears only in the central photoelectric conversion element 24b, the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 24a to the peak voltage Eb of the photoelectric conversion element 24b in the calculation unit 17a. To calculate Ea
Since <Eb, the ratio Ea / Eb is almost zero (Ea / Eb
The value of / Eb≈0) is output and stored in the storage unit 27b.
Further, in the calculation unit 27a, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 24c to the peak voltage Eb of the photoelectric conversion element 24b is calculated, and since Ec <Eb,
A value of substantially zero (Ec / Eb≈0) is output as the ratio Ec / Eb and stored in the storage unit 27b.

【0067】また、位置検出手段27では、図14
(a)に示すように、一端の光電変換素子24aのみに
スポットSが現れた場合、演算部27aにおいて、光電
変換素子24bのピーク電圧Ebに対する光電変換素子
24aのピーク電圧Eaの比Ea/Ebを演算し、Ea
>Ebであるから、比Ea/Ebとして非常に大きい値
(Ea/Eb≒∞)を出力し、記憶部27bに記憶す
る。同様に、光電変換素子24bのピーク電圧Ebに対
する光電変換素子24cのピーク電圧Ecの比Ec/E
bを演算し、Ec≒Ebであるから、比Ea/Ebとし
て約1(Ea/Eb≒1)の値を出力し、記憶部27b
に記憶する。
Further, in the position detecting means 27, FIG.
As shown in (a), when the spot S appears only on the photoelectric conversion element 24a at one end, the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 24a to the peak voltage Eb of the photoelectric conversion element 24b in the calculation unit 27a. To calculate Ea
Since> Eb, a very large value (Ea / Eb≈∞) as the ratio Ea / Eb is output and stored in the storage unit 27b. Similarly, the ratio Ec / E of the peak voltage Ec of the photoelectric conversion element 24c to the peak voltage Eb of the photoelectric conversion element 24b.
Since b is calculated and Ec≈Eb, a value of about 1 (Ea / Eb≈1) is output as the ratio Ea / Eb, and the storage unit 27b
Remember.

【0068】また、位置検出手段27では、図15
(a)に示すように、他端の光電変換素子24cのみに
スポットSが現れた場合、演算部27aにおいて、光電
変換素子24bのピーク電圧Ebに対する光電変換素子
24aのピーク電圧Eaの比Ea/Ebを演算し、Ea
≒Ebであるから、比Ea/Ebとして約1(Ea/E
b≒1)の値を出力し、記憶部27bに記憶する。同様
に、光電変換素子24bのピーク電圧Ebに対する光電
変換素子24cのピーク電圧Ecの比Ec/Ebを演算
し、Ec>Ebであるから、比Ec/Ebとして非常に
大きい値(Ec/Eb≒∞)を出力し、記憶部27bに
記憶する。
Further, in the position detecting means 27, FIG.
As shown in (a), when the spot S appears only in the photoelectric conversion element 24c at the other end, the ratio Ea / of the peak voltage Ea of the photoelectric conversion element 24a to the peak voltage Eb of the photoelectric conversion element 24b in the calculation unit 27a. Eb is calculated and Ea
Since ≈Eb, the ratio Ea / Eb is about 1 (Ea / Eb
The value of b≈1) is output and stored in the storage unit 27b. Similarly, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 24c to the peak voltage Eb of the photoelectric conversion element 24b is calculated, and since Ec> Eb, the ratio Ec / Eb is a very large value (Ec / Eb≈ ∞) is output and stored in the storage unit 27b.

【0069】次に、位置検出手段27では、図16
(a)に示すように、光電変換素子24aと光電変換素
子24bの境界にスポットSがまたがって現れた場合、
演算部27aにおいて、光電変換素子24bのピーク電
圧Ebに対する光電変換素子24aのピーク電圧Eaの
比Ea/Ebを演算し、Ea≒Ebであるから、比Ea
/Ebとして約1(Ea/Eb≒1)の値を出力し、記
憶部27bに記憶する。同様に、光電変換素子24bの
ピーク電圧Ebに対する光電変換素子24cのピーク電
圧Ecの比Ec/Ebを演算し、Ec<Ebであるか
ら、比Ec/Ebとしてほぼゼロ(Ec/Eb≒0)の
値を出力し、記憶部27bに記憶する。
Next, in the position detecting means 27, as shown in FIG.
As shown in (a), when the spot S appears across the boundary between the photoelectric conversion elements 24a and 24b,
In the calculation unit 27a, the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 24a to the peak voltage Eb of the photoelectric conversion element 24b is calculated, and since Ea≈Eb, the ratio Ea
A value of about 1 (Ea / Eb≈1) is output as / Eb and stored in the storage unit 27b. Similarly, the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 24c to the peak voltage Eb of the photoelectric conversion element 24b is calculated, and since Ec <Eb, the ratio Ec / Eb is almost zero (Ec / Eb≈0). The value of is output and stored in the storage unit 27b.

【0070】また、位置検出手段27では、図17
(a)に示すように、光電変換素子24bと光電変換素
子24cの境界にスポットSがまたがって現れた場合、
演算部27aにおいて、光電変換素子24bのピーク電
圧Ebに対する光電変換素子24aのピーク電圧Eaの
比Ea/Ebを演算し、Ea<Ebであるから、比Ea
/Ebとしてほぼゼロ(Ec/Eb≒0)の値を出力
し、記憶部27bに記憶する。同様に、光電変換素子2
4bのピーク電圧Ebに対する光電変換素子24cのピ
ーク電圧Ecの比Ec/Ebを演算し、Ec≒Ebであ
るから、比Ec/Ebとして約1(Ec/Eb≒1)の
値を出力し、記憶部27bに記憶する。
Further, the position detecting means 27 has the structure shown in FIG.
As shown in (a), when the spot S appears across the boundary between the photoelectric conversion element 24b and the photoelectric conversion element 24c,
The calculation unit 27a calculates the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 24a to the peak voltage Eb of the photoelectric conversion element 24b. Since Ea <Eb, the ratio Ea
A value of substantially zero (Ec / Eb≈0) is output as / Eb and stored in the storage unit 27b. Similarly, the photoelectric conversion element 2
The ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 24c to the peak voltage Eb of 4b is calculated. Since Ec≈Eb, a value of about 1 (Ec / Eb≈1) is output as the ratio Ec / Eb, It is stored in the storage unit 27b.

【0071】なお、基準とする電圧は、光電変換素子2
4bのピーク電圧Eb以外の他の光電変換素子24a,
24cのピーク電圧Ea,Ecでもよいし、また各ピー
ク電圧の和(Ea+Eb+Ec)でもよい。要は、光電
変換素子24a,24b,24cのピーク電圧の絶対値
ではなく、基準電圧に対する各光電変換素子24a,2
4b,24cのピーク電圧の比(割合)から標準粒子に
よる散乱光LsのスポットSの位置を求める方が確度が
高いからである。
The reference voltage is the photoelectric conversion element 2
Photoelectric conversion elements 24a other than the peak voltage Eb of 4b,
The peak voltages Ea and Ec of 24c may be used, or the sum (Ea + Eb + Ec) of each peak voltage may be used. In short, it is not the absolute value of the peak voltage of the photoelectric conversion elements 24a, 24b, 24c, but the photoelectric conversion elements 24a, 2 for the reference voltage.
This is because it is more accurate to obtain the position of the spot S of the scattered light Ls by the standard particles from the ratio (ratio) of the peak voltages of 4b and 24c.

【0072】以上のような5通りの場合について、図9
に示す粒子情報参照テーブルと同様な、基準電圧を光電
変換素子24bのピーク電圧Ebとした場合の粒子情報
参照テーブルが作成できる。従って、光電変換素子24
bのピーク電圧Ebに対する光電変換素子24aのピー
ク電圧Eaの比Ea/Ebと、光電変換素子24bのピ
ーク電圧Ebに対する光電変換素子24cのピーク電圧
Ecの比Ec/Ebが分かれば、粒子情報参照テーブル
を参照することにより、測定領域Mにおける粒子のZ方
向の通過位置を5通りの中から識別することができる。
FIG. 9 shows the above five cases.
Similar to the particle information reference table shown in (1), a particle information reference table when the reference voltage is the peak voltage Eb of the photoelectric conversion element 24b can be created. Therefore, the photoelectric conversion element 24
If the ratio Ea / Eb of the peak voltage Ea of the photoelectric conversion element 24a to the peak voltage Eb of b and the ratio Ec / Eb of the peak voltage Ec of the photoelectric conversion element 24c to the peak voltage Eb of the photoelectric conversion element 24b are known, refer to the particle information. By referring to the table, the passage position of the particle in the measurement region M in the Z direction can be identified from among the five passage positions.

【0073】また、上記した5通りの通過パターン以外
で、光電変換素子24aと光電変換素子24bの境界又
は光電変換素子24bと光電変換素子24cの境界にス
ポットSがまたがって現れるような測定領域Mの経路を
通過した場合であっても、光電変換素子24bのピーク
電圧Ebに対する光電変換素子24aのピーク電圧Ea
の比Ea/Ebと、光電変換素子24bのピーク電圧E
bに対する光電変換素子24cのピーク電圧Ecの比E
c/Ebが分かれば、比Ea/Ebの値と比Ec/Eb
の値を粒子情報参照テーブルに当てはめることにより、
測定領域Mにおける粒子のZ方向の通過位置を識別する
ことができる。
In addition to the above-mentioned five passage patterns, the measurement area M in which the spot S appears across the boundary between the photoelectric conversion element 24a and the photoelectric conversion element 24b or the boundary between the photoelectric conversion element 24b and the photoelectric conversion element 24c. Even when the photoelectric conversion element 24a passes through the path of the above, the peak voltage Ea of the photoelectric conversion element 24a with respect to the peak voltage Eb of the photoelectric conversion element 24b.
Ratio Ea / Eb and the peak voltage E of the photoelectric conversion element 24b
Ratio E of peak voltage Ec of photoelectric conversion element 24c to b
If c / Eb is known, the value of the ratio Ea / Eb and the ratio Ec / Eb
By applying the value of to the particle information lookup table,
It is possible to identify the passage position of the particles in the measurement region M in the Z direction.

【0074】本発明は、上述の発明の実施の形態に限定
されるものではなく、例えば、フローセルの全体形状と
しては、L型のフローセル1,11や直線状のフローセ
ル21を用いたが、要は流路の中心軸と集光光学系の光
軸が一致するように配置できる形状であればよい。従っ
て、レーザ光Laと散乱光Lsとの光学的な関わりに影
響を与えなければ、フローセルの全体形状は、屈曲又は
湾曲形状であってもよい。
The present invention is not limited to the above-described embodiments of the present invention. For example, as the overall shape of the flow cell, the L-shaped flow cells 1 and 11 and the linear flow cell 21 are used. May have a shape that can be arranged so that the central axis of the flow path and the optical axis of the condensing optical system match. Therefore, the overall shape of the flow cell may be a bent or curved shape as long as it does not affect the optical relationship between the laser light La and the scattered light Ls.

【0075】また、フローセルの断面形状として、上述
の発明の実施の形態では、矩形のものを用いたが、円形
のものでもよい。
Although the flow cell has a rectangular sectional shape in the above-described embodiment of the invention, it may have a circular sectional shape.

【0076】また、本発明では、複数の光電変換素子か
ら成る光検出手段の受光面を、流路の中心軸又はレーザ
光軸に対して垂直に配置し、流路における粒子通過位置
と粒子の散乱光の強度分布を検出した。しかし、粒子の
散乱光の強度分布を検出せずに、流路における粒子通過
位置だけを検出するのであれば、光検出手段の受光面を
流路の中心軸とレーザ光軸に対して垂直に配置すること
もできる。
Further, in the present invention, the light receiving surface of the light detecting means composed of a plurality of photoelectric conversion elements is arranged perpendicularly to the central axis of the flow channel or the laser optical axis, and the particle passage position and the particle The intensity distribution of scattered light was detected. However, if only the particle passage position in the flow channel is detected without detecting the intensity distribution of the scattered light of the particles, the light receiving surface of the light detecting means should be perpendicular to the central axis of the flow channel and the laser optical axis. It can also be arranged.

【0077】[0077]

【発明の効果】以上説明したように請求項1に係る発明
によれば、レーザ光を照射した測定領域のレーザ光強度
分布に伴う通過粒子の散乱光強度の大きさに影響され
ず、粒子が通過した流路の位置を検出することができ
る。
As described above, according to the invention of claim 1, the particles are not affected by the magnitude of the scattered light intensity of the passing particles due to the laser light intensity distribution of the measurement region irradiated with the laser light, and the particles are The position of the passage that has passed can be detected.

【0078】請求項2に係る発明によれば、レーザ光を
照射した測定領域のレーザ光強度分布に伴う通過粒子の
散乱光強度の大きさに影響されず、粒子が通過した流路
の位置を検出することができる。
According to the second aspect of the invention, the position of the flow path through which the particles pass can be determined without being affected by the magnitude of the scattered light intensity of the passing particles due to the laser light intensity distribution in the measurement region irradiated with the laser light. Can be detected.

【0079】請求項3に係る発明によれば、レーザ光を
照射した測定領域のレーザ光強度分布に伴う通過粒子の
散乱光強度の大きさに影響されず、粒子が通過した流路
の位置を2次元で検出することができる。
According to the invention of claim 3, the position of the passage through which the particles pass can be determined without being affected by the magnitude of the scattered light intensity of the passing particles accompanying the laser light intensity distribution in the measurement region irradiated with the laser light. It can be detected in two dimensions.

【0080】請求項4に係る発明によれば、レーザ光を
照射した測定領域のレーザ光強度分布に伴う通過粒子の
散乱光強度の大きさに影響されず、粒子が通過した流路
の位置を検出することができる。
According to the fourth aspect of the present invention, the position of the flow path through which the particles pass can be determined without being affected by the magnitude of the scattered light intensity of the passing particles associated with the laser light intensity distribution in the measurement region irradiated with the laser light. Can be detected.

【0081】請求項5に係る発明によれば、測定領域の
レーザ光強度分布に伴う粒子の散乱光強度の大きさに影
響されず、粒子が通過した流路の位置を検出することが
できる。
According to the fifth aspect of the invention, the position of the flow path through which the particles have passed can be detected without being affected by the magnitude of the scattered light intensity of the particles associated with the laser light intensity distribution in the measurement region.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施の形態に係る粒子通過位置
検出装置の構成図
FIG. 1 is a configuration diagram of a particle passage position detection device according to a first embodiment of the present invention.

【図2】図1においてレーザ光を照射した測定領域の平
断面図
FIG. 2 is a plan sectional view of a measurement region irradiated with laser light in FIG.

【図3】図1においてレーザ光を照射した測定領域の縦
断面図
FIG. 3 is a vertical cross-sectional view of a measurement region irradiated with laser light in FIG.

【図4】図1において光電変換素子アレイの受光状態
(a)とそのときの出力波形(b)を示す図
FIG. 4 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 1 and an output waveform (b) at that time.

【図5】図1において光電変換素子アレイの受光状態
(a)とそのときの出力波形(b)を示す図
FIG. 5 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 1 and an output waveform (b) at that time.

【図6】図1において光電変換素子アレイの受光状態
(a)とそのときの出力波形(b)を示す図
FIG. 6 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 1 and an output waveform (b) at that time.

【図7】図1において光電変換素子アレイの受光状態
(a)とそのときの出力波形(b)を示す図
7 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 1 and an output waveform (b) at that time.

【図8】図1において光電変換素子アレイの受光状態
(a)とそのときの出力波形(b)を示す図
FIG. 8 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 1 and an output waveform (b) at that time.

【図9】粒子情報参照テーブル示す図FIG. 9 is a diagram showing a particle information reference table.

【図10】本発明の第2の実施の形態に係る粒子通過位
置検出装置の構成図
FIG. 10 is a configuration diagram of a particle passage position detection device according to a second embodiment of the present invention.

【図11】本発明の第3の実施の形態に係る粒子通過位
置検出装置の構成図
FIG. 11 is a configuration diagram of a particle passage position detecting device according to a third embodiment of the present invention.

【図12】図11においてレーザ光を照射した測定領域
の縦断面図
FIG. 12 is a vertical cross-sectional view of a measurement region irradiated with laser light in FIG.

【図13】図11において光電変換素子アレイの受光状
態(a)とそのときの出力波形(b)を示す図
13 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 11 and an output waveform (b) at that time.

【図14】図11において光電変換素子アレイの受光状
態(a)とそのときの出力波形(b)を示す図
14 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 11 and an output waveform (b) at that time.

【図15】図11において光電変換素子アレイの受光状
態(a)とそのときの出力波形(b)を示す図
15 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 11 and an output waveform (b) at that time.

【図16】図11において光電変換素子アレイの受光状
態(a)とそのときの出力波形(b)を示す図
16 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 11 and an output waveform (b) at that time.

【図17】図11において光電変換素子アレイの受光状
態(a)とそのときの出力波形(b)を示す図
17 is a diagram showing a light receiving state (a) of the photoelectric conversion element array in FIG. 11 and an output waveform (b) at that time.

【図18】従来の光散乱式粒子計数装置の構成図FIG. 18 is a configuration diagram of a conventional light scattering type particle counting device.

【符号の説明】[Explanation of symbols]

1,11,21…フローセル、1a,11a,21a…
直線流路、2,12,22…レーザ光源、3,13,2
3…集光光学系(集光手段)、4,24…光電変換素子
アレイ、4a,4b,4c,24a,24b,24c…
光電変換素子、5,15,25…処理装置、6a,6
b,6c,16a,16b,16c,26a,26b,
26c…ピーク値検出手段(電圧検出手段)、7,1
7,27…位置検出手段、14…光検出手段、20…ト
ラップ。
1, 11, 21 ... Flow cell, 1a, 11a, 21a ...
Linear flow path, 2, 12, 22 ... Laser light source, 3, 13, 2
3 ... Condensing optical system (condensing means), 4, 24 ... Photoelectric conversion element array, 4a, 4b, 4c, 24a, 24b, 24c ...
Photoelectric conversion element, 5, 15, 25 ... Processing device, 6a, 6
b, 6c, 16a, 16b, 16c, 26a, 26b,
26c ... Peak value detecting means (voltage detecting means), 7, 1
7, 27 ... Position detecting means, 14 ... Photo detecting means, 20 ... Trap.

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G01N 15/14 G01N 15/02 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) G01N 15/14 G01N 15/02

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 透明部材で屈曲形状に形成したフローセ
ルと、このフローセルの流路にレーザ光を照射して測定
領域を形成するレーザ光源と、前記流路の中心軸と一致
する光軸を有して前記測定領域で発生する粒子の散乱光
を集光する集光手段と、この集光手段が集光した散乱光
を受光する複数の光電変換素子から成る光検出手段と、
前記複数の光電変換素子の出力信号を検出する電圧検出
手段と、この電圧検出手段の出力信号を互いに比較して
粒子が通過した前記測定領域の通過位置情報を出力する
位置検出手段を備えることを特徴とする粒子通過位置検
出装置。
1. A flow cell formed of a transparent member in a bent shape, a laser light source that irradiates a laser beam to a flow channel of the flow cell to form a measurement region, and an optical axis that coincides with a central axis of the flow channel. Then, a condensing means for condensing the scattered light of the particles generated in the measurement region, and a light detecting means comprising a plurality of photoelectric conversion elements for receiving the scattered light condensed by the condensing means,
Voltage detection means for detecting the output signals of the plurality of photoelectric conversion elements, and position detection means for comparing the output signals of the voltage detection means with each other and outputting passage position information of the measurement region through which the particles have passed, Characteristic particle passage position detection device.
【請求項2】 前記複数の光電変換素子から成る光検出
手段は、各受光面が流路の中心軸に垂直で、且つ流路の
中心軸とレーザ光軸にほぼ垂直な方向に隣接して設けた
N(Nは2以上の整数)個の光電変換素子から成る光電
変換素子アレイである請求項1記載の粒子通過位置検出
装置。
2. A light detecting means comprising a plurality of photoelectric conversion elements, wherein each light receiving surface is adjacent to a direction perpendicular to a central axis of the channel and substantially perpendicular to a central axis of the channel and the laser optical axis. The particle passing position detecting device according to claim 1, wherein the particle passing position detecting device is a photoelectric conversion element array including N (N is an integer of 2 or more) photoelectric conversion elements provided.
【請求項3】 前記複数の光電変換素子から成る光検出
手段は、縦と横がV個×H個(V、Hとも2以上の整
数)の光電変換素子から成り、各受光面が流路の中心軸
に垂直である請求項1記載の粒子通過位置検出装置。
3. The photo-detecting means composed of a plurality of photoelectric conversion elements is composed of V × H (vertical and horizontal) photoelectric conversion elements in vertical and horizontal directions (both V and H are integers of 2 or more), and each light receiving surface is a flow path. The particle passage position detecting device according to claim 1, which is perpendicular to a central axis of the.
【請求項4】 透明部材で形成したフローセルと、この
フローセルの流路にレーザ光を照射して測定領域を形成
するレーザ光源と、前記レーザ光の中心軸と一致する光
軸を有して前記測定領域で発生する粒子の散乱光を集光
する集光手段と、この集光手段の光軸上に位置するトラ
ップと、前記集光手段が集光した散乱光を受光する複数
の光電変換素子から成る光検出手段と、前記複数の光電
変換素子の出力信号を検出する電圧検出手段と、この電
圧検出手段の出力信号を互いに比較して粒子が通過した
前記測定領域の通過位置情報を出力する位置検出手段を
備えることを特徴とする粒子通過位置検出装置。
4. A flow cell formed of a transparent member, a laser light source that irradiates a flow path of the flow cell with laser light to form a measurement region, and an optical axis that coincides with a central axis of the laser light. Condensing means for condensing scattered light of particles generated in the measurement region, a trap located on the optical axis of the condensing means, and a plurality of photoelectric conversion elements for receiving scattered light condensed by the condensing means. And a voltage detecting means for detecting output signals of the plurality of photoelectric conversion elements, and comparing output signals of the voltage detecting means with each other to output passage position information of the measurement region where the particles have passed. A particle passing position detecting device comprising position detecting means.
【請求項5】 前記複数の光電変換素子から成る光検出
手段は、各受光面がレーザ光軸に垂直で、且つ流路の中
心軸とレーザ光軸にほぼ垂直な方向に隣接して設けたN
(Nは2以上の整数)個の光電変換素子で成る光電変換
素子アレイである請求項4記載の粒子通過位置検出装
置。
5. The light detecting means composed of a plurality of photoelectric conversion elements is provided such that each light receiving surface is adjacent to a direction perpendicular to the laser optical axis and substantially perpendicular to the central axis of the flow path and the laser optical axis. N
The particle passing position detecting device according to claim 4, wherein the particle passing position detecting device is a photoelectric conversion element array composed of (N is an integer of 2 or more) photoelectric conversion elements.
JP01224598A 1998-01-26 1998-01-26 Particle passing position detector Expired - Fee Related JP3480669B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP01224598A JP3480669B2 (en) 1998-01-26 1998-01-26 Particle passing position detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01224598A JP3480669B2 (en) 1998-01-26 1998-01-26 Particle passing position detector

Publications (2)

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JP3480669B2 true JP3480669B2 (en) 2003-12-22

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Country Status (1)

Country Link
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AU2002343929A1 (en) 2002-09-27 2004-04-19 Rion Co., Ltd. Flow cell, and particle measurement device using the same
JP5160154B2 (en) * 2007-06-29 2013-03-13 北斗電子工業株式会社 Method and apparatus for detecting the size of particles in a liquid
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US8027035B2 (en) 2007-12-04 2011-09-27 Particle Measuring Systems, Inc. Non-orthogonal particle detection systems and methods
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