JP3479517B2 - Nonvolatile semiconductor memory device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-volatile semiconductor memory device, and more particularly to a technique effectively used for a erasing technique of a batch erasing type EEPROM (electrically erasable & programmable read only memory). is there.

[0002]

2. Description of the Related Art An EPROM (erasable & programmable read only memory) capable of erasing stored information by ultraviolet rays is used as a semiconductor nonvolatile storage device,
There is an EEPROM capable of electrically erasing stored information.
The EPROM is suitable for a large storage capacity because the memory cell area for storing information is relatively small.
In order to erase the stored information, it is necessary to irradiate the memory cells with ultraviolet light, which is why they are sealed in a package with a relatively expensive window. Also, to write or rewrite information by a programmer,
EPRO when writing or rewriting new information
It has problems such as the need to remove M from the system in which it is implemented.

On the other hand, the EEPROM is capable of electrically rewriting the stored information in the state where it is mounted in the system. However, in the EEPROM, the area of the memory cell forming the EEPROM is relatively large, for example, about 2.5 to 5 times as large as that of the EPROM. Therefore, it cannot be said that the EEPROM is suitable for increasing the storage capacity. Therefore, recently, as an intermediate semiconductor non-volatile memory device between the two, an electrical batch erasing type EEP is used.
What is called a ROM is being developed. The electric batch erasing type EEPROM has a function of collectively electrically erasing all of the memory cells formed on a chip or a group of memory cells formed on a chip. Is a semiconductor non-volatile memory device having. In the electrically batch erase type EEPROM, the size of the memory cell can be made as small as that of the EPROM.

Regarding such a batch erasable EEPROM, the 1980 IEEE SOLID-STATE CIRCUITS conference
CONFERENCE) pages 152-153, 1987 IEE, International, Solid-State Circuits Conference (IEEE INTERNATIONAL
SOLID-STATE CIRCUITS CONFERENCE) pages 76-77,
E-E-Journal of Solid State Circuits, Volume 23, Issue 5 (1988), 1157
Pages 1163 (IEEE, J. Solid-State Cicuits, vol.23
(1988) pp.1157-1163).

FIG. 16 is a schematic diagram showing a cross-sectional structure of a memory cell of an electrically collective erasing type EEPROM which was announced at the International Electron Device Meeting in 1987. The memory cell shown in the figure has a structure very similar to that of a normal EPROM memory cell. That is, a memory cell is an insulated gate field effect transistor (hereinafter referred to as a MOS) having a two-layer gate structure.
FET or simply referred to as a transistor). In the figure, 8 is a P-type silicon substrate, 11 is a P-type diffusion layer formed on the silicon substrate 8, 10 is a low concentration N-type diffusion layer formed on the silicon substrate 8, 9
Are N-type diffusion layers formed in the P-type diffusion layer 11 and the N-type diffusion layer 10, respectively. Further, 4 is a floating gate formed on the P-type silicon substrate 8 via a thin oxide film 7, 6 is a control gate formed on the floating gate 4 via the oxide film 7,
Reference numeral 3 is a drain electrode, and 5 is a source electrode. That is,
The memory cell shown in the figure is constituted by an N-channel MOSFET having a double-layer gate structure, and information is stored in this transistor. Here, the information is substantially retained in the transistor as a change in threshold voltage.

Unless otherwise specified, a case where a memory cell has a transistor for storing information (hereinafter referred to as a storage transistor) of an N channel type will be described below. The operation of writing information to the memory cell shown in FIG. 16 is similar to that of the EPROM. That is, the write operation is performed by injecting into the floating gate 4 hot carriers generated in the vicinity of the drain region 9 connected to the drain electrode 3. Due to this write operation, the threshold voltage of the memory transistor seen from the control gate 6 becomes higher than that of the memory transistor which has not performed the write operation.

On the other hand, in the erase operation, a high electric field is generated between the floating gate 4 and the source region 9 connected to the source electrode 5 by grounding the control gate 6 and applying a high voltage to the source electrode 5. Then, the electrons accumulated in the floating gate 4 are extracted to the source electrode 5 through the source region 9 by utilizing the tunnel phenomenon through the thin oxide film 7. As a result, the stored information is erased. That is, the erase operation lowers the threshold voltage of the memory transistor as viewed from the control gate 6. In the read operation, the voltage applied to the drain electrode 3 and the control gate 6 is set so as to prevent weak writing to the memory cell, that is, to prevent undesired carrier injection into the floating gate 4. Limited to relatively low values. For example, a low voltage of about 1 V is applied to the drain electrode 3 and a low voltage of about 5 V is applied to the control gate 6.
By detecting the magnitude of the channel current flowing through the memory transistor by these applied voltages, "0" or "1" of the information stored in the memory cell is determined.

Generally, in electrical erasing, if erasing is continued for a long time, the threshold voltage of the storage transistor can be a negative value, unlike the threshold voltage of the storage transistor in a thermal equilibrium state. On the other hand, when the stored information is erased by ultraviolet rays like EPROM, the threshold voltage of the storage transistor which changes by the erase operation settles at the threshold voltage when the storage device is manufactured, that is, The threshold voltage of the storage transistor after the erase operation can be controlled by the manufacturing conditions or the like when manufacturing the memory device. However, in the case of electrically erasing stored information, the stored information is erased by pulling out the electrons accumulated in the floating gate to the source electrode. More electrons will be extracted than the amount of electrons injected into the floating gate during operation. Therefore, if electrical erasing is continued for a relatively long time,
The threshold voltage of the storage transistor has a value different from the threshold voltage when manufactured. In other words,
When the erase operation is performed, in contrast to the EPROM, the threshold voltage determined by the manufacturing conditions at the time of manufacturing does not settle. The inventors measured the change in the threshold voltage of the storage transistor due to electrical erasing.

FIG. 8 shows the relationship between the erase time and the threshold voltage of the memory transistor, which changes due to the erase, obtained by this measurement. In the figure, the horizontal axis represents the erase time and the vertical axis represents the threshold voltage of the memory transistor, Vo is substantially zero threshold voltage, and + Vth.
s indicates that the threshold voltage is positive, and -Vths indicates that the threshold voltage is negative. Further, Vthv represents the variation in the threshold voltage after erasing due to the variation in the manufacturing conditions. From this figure, it will be understood that the threshold voltage changes to a negative voltage when erasing is continued for a relatively long time.

It will also be understood that the threshold voltage obtained by the erase operation may differ for each storage transistor due to variations in manufacturing conditions and the like.
It will be further understood from the figure that the variation of the threshold voltage increases with the erase time. That is, as the erase time becomes longer, the difference in threshold voltage between the two storage transistors becomes larger. If the threshold voltage of the memory transistor becomes negative as described above, the read operation is adversely affected.

This will be described with reference to FIG. Now, consider the case where the stored information is read from the memory cell 12 in the written state. Reference numeral 17 in the figure represents a sense amplifier.
In order to bring the memory cell 12 into the selected state, the selected voltage at the time of the read operation, for example, the power supply voltage Vcc (5V) is applied to the word line 13 to which it is coupled, and the other memory cells 14 and the like are supplied with them. In order to bring it into the non-selected state, the word line 15 and the like are set to the non-selected voltage at the time of the read operation, for example, the ground potential 0V of the circuit. If the threshold value of the non-selected memory cells 14 connected to the data line 16 corresponding to the memory cell 12 from which the stored information is to be read is negative, the voltage of the word line 15, that is, , Even if the voltage of the control gate of the memory cell is set to 0V, the data line 16 is passed through the memory cell 14 in the non-selected state.
Since an undesired current (non-selective leak current) flows through, the read time is delayed, which causes erroneous read.

Further, even in the write operation, if the threshold voltage of the storage transistor in the memory cell is negative, there is an adverse effect. Normally, in the write operation using hot carriers, a high voltage for writing (V
pp) is applied to the drain region of the storage transistor in the memory cell via the MOSFET. Above MOSFET
The voltage drop at is dependent on the current flowing through it. Therefore, under the condition that the threshold voltage of the storage transistor becomes a negative value as described above, the voltage drop in the MOSFET becomes too large and the voltage applied to the drain of the storage transistor in the memory cell is The voltage drop is reduced. As a result, the time required for writing is increased. Therefore, the above E
In the EPROM, the threshold voltage value after erasing must be controlled with high accuracy.

In order to electrically erase the stored information,
In a conventional EEPROM, such as the EEPROM described on pages 152-153 of the 1980 IEE International International Solid-State Circuits Conference, each memory cell has a storage transistor and a series connection therewith. And a select transistor for blocking a non-selected leak current connected. In this EEPROM, the program line is connected to the control gate of the memory transistor and the select line is connected to the gate of the select transistor. That is, the storage transistor and the selection transistor are coupled to different word lines.

Further, FIG. 18 shows the above-mentioned 1987 IEE, International, Solid-
A cross-sectional view of a memory cell of an electrically erasable EEPROM as described on pages 76-77 of the State Circuits Conference is shown. The operation of this memory cell is almost the same as that of the memory cell shown in FIG. 16 except that the erase of stored information is different from that of the memory cell shown in FIG. It is done using phenomena. In this memory cell, although there is only one gate electrode to be connected to the word line, it can be considered that it is substantially composed of two transistors. That is, it can be considered that the memory cell is configured by the selection transistor and the storage transistor in which the gate electrode and the control gate electrode are integrated.

Since this memory cell substantially has the selection transistor as described above, it solves the problem of non-selection leak current at the time of reading. However, since the write operation is performed by hot carriers that require a larger amount of current than when using the tunnel phenomenon,
The above-mentioned adverse effects during the write operation are not improved.

EEPROM, eg, 1980 IEE, International, Solid-State Circuits Conference, page 152, mentioned above.
In the EEPROM disclosed on page 153, one memory cell is composed of the memory transistor and the select transistor connected to different word lines. On the other hand, the memory cells of the electrically collective erasing type EEPROM shown in FIGS. 16 and 18 are composed of one storage transistor connected to one word line.

This becomes clearer by showing the memory cells and the like shown in FIGS. 16 and 18 in a circuit diagram. Therefore, FIGS. 19A and 19B show circuit diagrams of the above memory cell. In FIG. 19B,
A schematic diagram of the memory cell presented by the 1980 IEE International, Solid-State Circuits Conference is shown. In the figure, W1 and W2 are different word lines, and D is a data line. In addition, Qs represents a selection transistor, and Qm represents a memory transistor.

FIG. 19A shows the above-mentioned FIG. 16 and FIG.
2 shows a circuit diagram of the memory cell shown in FIG. As can be understood from the figure, one memory cell has its control gate connected to one word line and one data line D.
Is connected to the drain and the source is connected to one source line S by one storage transistor Qm. During read and write operations,
In order to select a desired one memory cell from a plurality of memory cells, in FIG.
If one data line is selected, it is possible to select one memory cell connected to the selected word line W and connected to the selected data line D. In other words, 1 by one word line and one data line
Individual memory cells can be defined. Note that FIG.
In (A), the source line S is common to the source lines S of all the other memory transistors formed on the chip, or the source line S is common to a predetermined number of memory cells forming one memory block. To be done.

Since the memory cell shown in FIG. 19A can be formed by one storage transistor, the area on the chip required for forming the memory cell is EPROM.
Can be as small as that in. However, it is indispensable to control the threshold voltage of the memory transistor after erasing in order to realize the electric batch erasing of memory information.

To this end, it is necessary to repeat the operation of dividing the erasing into several times, reading each time erasing is performed, confirming whether the erasing is sufficient, and erasing again if it is not sufficient. There is. Above I / E / E Journal of Solid State Circuits,
Vol. 23, No. 5, (1988), pp. 1157 to 1163, proposes an algorithm for controlling the threshold voltage after such erasing. In the above-mentioned document, it is stated that this algorithm is executed by an external microprocessor provided separately from the electrically batch erase type EEPROM. In order to secure the lower limit voltage Vccmin of the operable power supply voltage at the time of normal reading,
During reading in the above algorithm (during erase verification)
Describes generating a verify voltage in an EEPROM chip.

[0021]

SUMMARY OF THE INVENTION In the above prior art,
Since the above algorithm is executed by the microprocessor, the electrical batch erase type EEPR
It is troublesome to execute the erase operation with the OM installed in the system. Further, since it takes a relatively long time to erase the stored information, the microprocessor is occupied by the erase operation of the EEPROM for a relatively long time, and the system is actually stopped. Have a problem.

An object of the present invention is to provide a nonvolatile semiconductor memory device capable of stably controlling erase of memory cells while simplifying the circuit. Another object of the present invention is to provide a nonvolatile semiconductor memory device which is easy to use. The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0023]

The outline of a typical one of the inventions disclosed in the present application will be briefly described as follows. That is, it has a plurality of electrically erasable memory cells connected to the intersections of a plurality of word lines and a plurality of data lines, a write mode for writing information to the memory cells, and information of the memory cells. A read mode for reading and an erase mode for performing a verify operation for reading the state of the threshold voltage of the memory cell and an erase operation for applying a voltage for setting the threshold voltage of the memory cell within a predetermined range are provided. A data polling mode for outputting the state of the verify operation in the erase mode to the outside of the nonvolatile semiconductor memory device is provided.

According to the above-mentioned means, while using the memory cell having the one-transistor structure, the erase level is stably set while preventing the over-erase, and the memory management by the processor or the like is simplified by the data polling mode. be able to.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 20 is a block diagram showing an electrical batch erasing type EEPROM (hereinafter, referred to as flash EEPROM) to which the present invention is applied.
(Also referred to as ROM). Although not particularly limited, each circuit block shown in the figure is formed on one semiconductor substrate by a well-known semiconductor integrated circuit technique. Further, in the figure, the mark “◯” indicates an external terminal provided in the flash EEPROM.

In the present application, in order to facilitate understanding of the invention in the drawings, the notation method of logical symbols follows the general notation method. For example, a signal in which a low level becomes an active level has an upper line attached to an alphabet indicating a control signal, but in the specification, a signal corresponding to the alphabet is represented by adding B (meaning a bar) at the end. For example, the chip enable signal is represented as CEB.

In the figure, M-ARY-0 to M-AR
Each of Y-7 is a memory array having a similar configuration to each other, and is not particularly limited, but includes a plurality of word lines, a plurality of data lines arranged to intersect these word lines, and a word line. And a memory cell provided at each intersection of the data line and the data line.

XADB is a row address buffer, which receives an external row address signal AX supplied through an external terminal and forms an internal complementary row address signal according to the row address signal AX. XDCR is a row address decoder, and is the row address buffer XADB.
The internal complementary row address signal formed by is received, and the internal row address signal is decoded. Although not particularly limited, in the present embodiment, the row address buffer XADB and the row address decoder XDCR are commonly used for the memory arrays M-ARY-0 to M-ARY-7. That is, the row address decoder XDCR decodes the internal complementary row address signal to thereby cause the memory arrays M-ARY-0 to M-.
A word line selection signal for selecting one word line designated by the external row address signal AX is formed from the plurality of word lines in each of ARY-7. As a result, one word line is selected from each of the memory arrays M-ARY-0 to M-ARY-7.

In the figure, YADB is a column address buffer, which receives an external column address signal AY supplied through an external terminal and forms an internal complementary column address signal according to the external column address signal AY. YDCR is a column address decoder, which decodes the internal complementary column address signal formed by the column address buffer YADB to form a data line selection signal according to the external column address signal AY. Although not shown in the figure, the memory array M-ARY-
1 to 0-M-ARY-7 designated by the external column address signal AY of the plurality of data lines in the memory array in response to the data line selection signal.
A column switch is provided for coupling the data line of the book to a common data line (not shown) corresponding to the memory array.

In this way, the memory array M-ARY
In each of −0 to M-ARY-7, one word line and one data line according to the external row address signal AX and the external column address signal AY are selected, and the selected word line and data line are selected. The memory cell provided at the intersection with and is selected. That is, the memory cell coupled to the selected word line and data line is selected from the plurality of memory cells in the entire memory array. As a result, one memory cell is selected from each memory array.

Although not particularly limited, in the present embodiment, the write operation or the read operation is performed almost simultaneously on the memory cells selected from the respective memory arrays. That is, the information writing or reading operation is performed in 8-bit units. Therefore, the EEPROM of this embodiment has eight external input / output terminal I / Os.
0 to I / O7 are provided for the memory array M-AR
A data input buffer DIB, a data output buffer DOB, a sense amplifier SA are provided between Y-0 to M-ARY-7 and the corresponding external input / output terminals I / O0 to I / O7.
And MOSFETs Q18 and Q16 for switching.

Taking the memory array M-ARY-0 as an example, in the write operation, the selected memory cell is turned on by the write control signal wr.
Data input buffer DIB- via OSFET Q18
0 output node, in the case of a read operation,
MOS turned on by read control signal re
It is coupled to the input node of the sense amplifier SA-0 via the FET Q16. The input node of the data input buffer DIB-0 is coupled to the external input / output terminal I / O0, and the output node of the sense amplifier SA-0 is coupled through the data output buffer DOB-0. The remaining memory arrays M-ARY-1 to M-ARY-7 are also coupled to the external input / output terminals I / O1 to I / O7 in the same manner as the memory array M-ARY-0 described above.

In the figure, LOGC is an internal circuit for performing an automatic erase control operation, which will be described in detail later. Also, CNTR is a timing control circuit, which responds to the external signal or voltage supplied to the external terminals CEB, OEB, WEB, EEB and Vpp, and the signal from the internal circuit LOGC in response to the above-mentioned control signals wr and re. , Etc. to form a timing signal. In the figure, Vcc is an external terminal for supplying the power supply voltage Vcc to each timing block, and Vss is an external terminal for supplying the circuit ground potential Vss to each circuit block. Although the word line is divided for each memory array in the above description, the word line may be common to each memory array.

FIG. 1 shows one memory array M-AR in the flash EEPROM shown in FIG.
Y, its peripheral circuits, row address buffer, column address buffer, row address decoder, column address decoder, timing control circuit CNTR and internal circuit L
A detailed block diagram of the OGC is shown. As can be easily understood from the above description, each of the circuit elements shown in FIG. 1 is not particularly limited, but one single crystal silicon is manufactured by a known CMOS (complementary MOS) integrated circuit manufacturing technique. It is formed on such a semiconductor substrate. In the figure, the P-channel MOSFET is distinguished from the N-channel MOSFET by adding an arrow to its channel (back gate) portion. This also applies to other drawings.

Although not particularly limited, the integrated circuit is formed on a semiconductor substrate made of single crystal P-type silicon. The N-channel MOSFET comprises a source region, a drain region, and a polysilicon layer formed on the surface of the semiconductor substrate between the source region and the drain region via a thin gate insulating film between the source region and the drain region. It is composed of such a gate electrode. P-channel MOSFET
Are formed in the N-type well region formed on the surface of the semiconductor substrate. As a result, the semiconductor substrate constitutes a common substrate gate of the plurality of N-channel MOSFETs formed on the semiconductor substrate, and the ground potential Vss of the circuit is supplied. N
The mold well region has a P channel MO formed thereon.
It constitutes the substrate gate of the SFET. P channel MOS
The power supply voltage Vcc is supplied to the substrate gate of the FET, that is, the N-type well region. However, the N-type well region in which the P-channel MOSFET is formed, which constitutes a circuit for processing a high voltage higher than the power supply voltage Vcc, is not particularly limited, but a high voltage applied from the outside via the external terminal Vpp. Vpp or a high voltage generated inside the EEPROM is supplied.

Alternatively, the integrated circuit may be formed on a semiconductor substrate made of single crystal N-type silicon. In this case, the N-channel MOSFET and the non-volatile storage element are P
The P-channel MOSFET is formed in the mold well region and is formed on the N-type semiconductor substrate.

The flash EEPROM of this embodiment will be described below.
1 will be described in more detail with reference to FIG. 1. However, in order to facilitate understanding, the following description may overlap with the description of FIG. 20 described above.

Although not particularly limited, the flash EEPROM of this embodiment has X (row) and Y (column) address signals AX and AY supplied from the outside through external terminals.
An internal complementary address signal is formed by the address buffers XADB and YADB which receive the address decoder X
It is supplied to DCR and YDCR. Although not particularly limited,
The address buffers XADB and YADB are activated by the internal chip selection signal ceB, take in the external address signals AX and AY supplied from the external terminals, and have the opposite phase to the internal address signal in phase with the external address signal supplied from the external terminals. To form a complementary address signal including the internal address signal of Also, the address buffer XAD
B and YADB include, in addition to the above-described chip selection signal ceB, a signal ES indicating an erase mode and an internal address signal A.
XI, AYI, etc. are supplied. However, these signals ES, AXI, YAI, etc. are signals used in the erase mode described later, and in the normal write or read mode, the address buffer AXD is used.
It does not affect the operation of B and YADB.

The row (X) address decoder XDCR is
An address decoder activation signal DE is activated to form a selection signal for selecting one word line according to the complementary address signal from the corresponding address buffer XADB from a plurality of word lines in the memory array M-ARY. .

Column (Y) address decoder YDCR
Is also activated by the address decoder activation signal DE, and one data line according to the complementary address signal from the corresponding address buffer YADB is connected to the memory array M-.
A selection signal for selecting from a plurality of data lines in ARY is formed.

The memory array M-ARY includes a plurality of word lines and a plurality of data lines arranged so as to intersect the word lines, and a plurality of memories provided at respective intersections of the word lines and the data lines. And a cell. In the figure, a part of the memory array M-ARY is exemplarily shown as a representative. That is, in FIG. 1, the word lines W1 and W2 of the plurality of word lines, the data lines D1, D2 and Dn of the plurality of data lines, and the intersections of the data lines and the word lines are provided. Memory cells are shown by way of example. Each of the memory cells is shown in FIG.
As described above, it is composed of one storage transistor (nonvolatile storage element). That is, each memory cell is composed of one storage transistor having a stacked gate structure having a control gate and a floating gate. The memory cell exemplarily shown in the figure is composed of storage transistors (nonvolatile storage elements) Q1 to Q6. As described above, the memory transistor is not particularly limited, but EP
It has a structure similar to that of the storage transistor of the ROM.
However, the point that the erase operation is electrically performed by utilizing the tunnel phenomenon between the floating gate and the source region coupled to the source line CS as described before or after is that ultraviolet rays are used. This is different from the EPROM erasing method used.

In the memory array M-ARY, the storage transistors Q1 to Q3 (Q4 to Q3) arranged in the same row.
The control gate (selection node of the memory cell) of Q6) is connected to the corresponding word line W1 (W2), and storage transistors Q1 and Q4 arranged in the same column.
Drain regions of Q3 to Q6 (input / output nodes of memory cells) are connected to corresponding data lines D1 to Dn, respectively. The source region of the storage transistor is coupled to the source line CS.

In this embodiment, although not particularly limited, an N channel MOSFET Q10 and a P channel MOSFET Q17 which are switch-controlled by the erase circuit ERC are connected to the source line CS. The erase circuit ERC turns on the N-channel MOSFET Q10 in the write mode and the read mode so that the ground potential Vss of the circuit is applied to the source line CS. On the other hand, in the erase mode, the P-channel MOSFET Q17 is turned on so that the high voltage Vpp for erase is applied to the source line CS.

If it is desired to partially erase the memory array M-ARY, the storage transistors arranged in a matrix are vertically divided into M blocks, and each block corresponds to the source line. A source line is provided for each. As described above, the erasing circuit ERC and the MOSFETs Q10 and Q17 as described above are provided in each of the source lines CS provided in each block. In this case, it is necessary to specify each erasing circuit by an address signal in order to decide which one of a plurality of blocks is to be erased. In the embodiment described above, the memory array M-AR
The stored information of all the memory cells forming Y is erased at once. In this case, there is one source line CS, and the erase circuit ERC and MOSFETs Q10 and Q17 are provided correspondingly.

In the EEPROM of this embodiment, although not particularly limited, since writing / reading is performed in a unit of a plurality of bits such as 8 bits, the memory array M-ARY is as shown in FIG. 8 sets in total (M
-ARY-0 to M-ARY-7). When writing or reading information in units of 16 bits, for example, 16 sets of the memory array M-ARY are provided.

Each of the data lines D1 to Dn forming one memory array M-ARY is passed through a column selection switch MOSFET Q7 to Q9 (column switch) for receiving a selection signal formed by the column address decoder YDCR. And is selectively connected to the common data line CD. The output terminal of the write data input buffer DIB that receives write data input from the external terminal I / O is connected to the common data line CD by a switch MOSFET Q18.
Connected via. Similarly, for the remaining seven memory arrays M-ARY, as described above with reference to FIG.
A column selection switch MOSFET similar to the above is provided, and the selection signal from the column address decoder YDCR is supplied. In addition, a different column address decoder is provided for each memory array, and the column selection switch MOS is provided.
The FETs may be switch-controlled by a selection signal from the corresponding column address decoder.

The common data line CD provided corresponding to the memory array M-ARY is a switch MOSFETQ.
It is coupled via 16 to the input terminal of the first-stage amplifier circuit constituting the input stage circuit of the sense amplifier SA. For convenience, the MOSFET that constitutes the above-mentioned first-stage amplifier circuit
A circuit formed by Q11 to Q15 and the column-shaped CMOS inverter circuits N1 and N2 is referred to as a sense amplifier SA. The sense amplifier SA has a relatively low power supply voltage Vcc during normal reading.
The power supply voltage Vcc / Vcv is supplied to the power supply voltage terminal Vcc / Vcv as the power supply of A, and the voltage Vcv having a potential lower than the value of the power supply voltage Vcc is supplied to the power supply power supply voltage terminal Vcc / Vcv as the power supply at the time of erase verify described later.

The common data line C shown as an example above
D is turned on by the read control signal re
N-channel type amplification MO through OSFET Q16
It is connected to the source of SFET Q11. This amplification MOS
Between the drain of the FET Q11 and the power supply voltage terminal Vcc / Vcv of the sense amplifier SA, a gate of the circuit ground potential Vss is applied to the P-channel type load MOSFE.
TQ12 is provided. The load MOSFET Q1
2 performs an operation of passing a precharge current to the common data line CD for the read operation.

In order to increase the sensitivity of the amplification MOSFET Q11, the voltage of the common data line CD via the switch MOSFET Q16 is N-channel type drive MOSFE.
Driving MOSFET Q which is an input of an inverting amplifier circuit composed of TQ 13 and P-channel type load MOSFET Q 14.
It is supplied to 13 gates. The output voltage of the inverting amplifier circuit is supplied to the gate of the amplifier MOSFET Q11. Further, in order to prevent the sense amplifier SA from consuming unnecessary current during the non-operation period of the sense amplifier SA, an N-channel MOSF is provided between the gate of the amplification MOSFET Q11 and the ground potential point Vss of the circuit.
ETQ15 is provided. The operation timing signal scB of the sense amplifier is commonly supplied to the gates of the MOSFET Q15 and the P-channel MOSFET Q14.

At the time of reading the memory cell, the sense amplifier operation timing signal scB is set to the low level. As a result, the MOSFET Q14 is turned on and M
The OSFET Q15 is turned off. The memory transistor forming the memory cell has a high threshold voltage or a low threshold voltage with respect to the selection level of the word line at the time of read operation according to the data written in advance.

In the read operation, the memory array M is operated by the address decoders XDCR and YDCR described above.
1 selected from a plurality of memory cells forming the ARY
When the memory cells are in the OFF state even though the word line is at the selection level, the common data line CD is limited to a relatively low potential by the current supplied from the MOSFETs Q12 and Q11. High level. On the other hand, when the selected memory cell is turned on by the selection level of the word line, the common data line CD is set to the low level limited to a relatively high potential.

In this case, the high level of the common data line CD is an inverting amplifier circuit (MO
The relatively low level output voltage formed by SFETs Q13, Q14) is applied to the gate of MOSFET Q11 to limit it to a relatively low potential as described above. On the other hand, the low level of the common data line CD is an inverting amplifier circuit (MOSFE) that receives the low level potential.
The relatively high level voltage formed by TQ13, Q14) is applied to the gate of MOSFET Q11 to limit it to a relatively high potential as described above.
In the data line discharge MOSFETs Q19 to Q21 provided between the data lines D1 to Dn and the source line, since the gate bias signal DS supplied to the gates of the data line discharge MOSFETs Q19 to Q21 is set to the intermediate level as described later, the column address decoder YD.
The charges of the data line not selected by CR, that is, the data line in the non-selected state are discharged.

The amplification MOSFET Q11 described above is used.
Performs the amplifying operation of the grounded-gate type source input and transmits the output signal to the input of the CMOS inverter circuit N1.
The CMOS inverter circuit N2 has a signal S0 obtained by waveform-shaping the output signal of the CMOS inverter circuit N1 (the memory array M-ARY in FIG. 1 corresponds to the memory array M-A in FIG. 20).
(For RY-0) and delivers it to the input of the corresponding data output buffer DOB-0. Data output buffer DO
B-0 amplifies the signal S0 and sends it out from the external terminal I / O0.

The data output buffer is provided with the following functions in addition to the read data output function as described above. As will be described later with reference to FIG. 11, the data output buffers DOB-0 to DOB-6 corresponding to I / O0 to I / O6 among the eight external input / output terminals are the data output buffer activation signals DO and DOB. Output operation in three states including high impedance is performed. On the other hand, the data output buffer DOB corresponding to the external input / output terminal I / O7
-7 is controlled by data output buffer activation signal signals DO7 and DO7B different from the above signals DO and DOB. This data output buffer DOB-7 is EEPR
It is used in the data polling mode of reading the internal erased state of the OM to the outside.

The write data supplied from the external input / output terminal I / O is transmitted to the common data line CD via the data input buffer DIB. Even between the common data line corresponding to another memory array M-ARY and the external input / output terminal, as shown in FIG. 20, a read operation including the same input stage circuit, sense amplifier SA, and data output buffer DOB as described above. A circuit and a write circuit including a data input buffer DIB are provided respectively.

The timing control circuit CNTR is not particularly limited, but the external terminals CEB, OEB, WEB, EEB.
(Hereinafter, may be simply referred to as signals CEB, OEB, WEB and EEB) and chip enable signal CEB and output enable signal OE supplied to Vpp.
B, a write enable signal WEB, an erase enable signal EEB, a high voltage for programming / erasing Vpp, a pre-write pulse PP supplied from an internal circuit LOGC for controlling an automatic erasing operation described later, and a signal ES indicating an erasing mode. , Decoder control signal DC, erase verify signal E
In accordance with V, the automatic erasing mode setting delay signal AED, the sense amplifier activation signal VE at the time of verification, etc., internal timing signals such as the internal control signal ceB and the operation timing signal scB of the sense amplifier are formed, and selected for the address decoder or the like. The voltage is switched between the read low voltage Vcc, the erase verify low voltage Vcv, and the write high voltage Vpp, and any one of these voltages is selectively output.

The signals PP, ES, DC, EV, AED, VE, etc., formed by the internal circuit LOGC, are supplied to the timing control circuit CNTR in modes other than the erase mode.
Does not affect the operation of. That is, only in the erase mode, the signals PP, ES, DC, EV, AED and VE are valid, and various signals for the erase operation corresponding to these signals are generated by the timing control circuit CNTR. It

6 and 7 are circuit diagrams showing an embodiment of the main part of the timing control circuit CNTR. Table 1 below shows the flash EE through the external terminals.
Each external signal supplied to the PROM and its corresponding operation mode are shown, and Table 2 shows some of internal timing signals formed based on each external signal.

[0059]

[0060]

In these Tables 1 and 2, H indicates a high level, L indicates a low level, and Vpp indicates a voltage (for example, about 12V) higher than the power supply voltage Vcc (for example, 5V). In the column of external terminal I / O in Tables 1 and 2 above, H
z is high impedance state, input is data input,
output indicates data output, especially output (I / O7)
Indicates that the external input / output terminal I / O7 is a data output.

In Tables 1 and 2 above, * indicates that it may be high level (H) or low level (L), and O is given by the signal supplied from the internal circuit LOGC to the timing control circuit CNTR. It shows that the level changes. How to read Tables 1 and 2 will be described by taking the read mode as an example. The same applies to the other modes, which will be easily understood from the following examples.

A low level (L) chip enable signal CEB, an output enable signal OEB, and a high level (H) write enable signal WEB and an erase enable signal EE are externally applied to the flash EEPROM.
When B is supplied and a low voltage such as the power supply voltage Vcc is applied to the external terminal Vpp of the flash EEPROM, it is determined that the read mode is instructed by the timing control circuit CNTR, and the timing control circuit CNTR and The internal circuit LOGC has internal signals VP and E.
V, wp, wr, AED, DC, ES, POLM, PP
Of the internal signals SC and r
Each of e and DE is set to high level (H). Then, the data held in the memory cell designated by the address signal is transferred to the external input / output terminals I / O0-I0.
It is output from I / O7.

In the present specification, the same symbol is used for the same signal or the same terminal. In addition, in the drawings, the signals represented by the symbol with "─" added to the upper part of the alphabetical characters are the signals represented by the same alphabetic character and the signals without "─" added to the upper part. On the other hand, a signal whose phase is inverted is shown. For example, the symbol vpB is a signal whose phase is inverted with respect to the signal represented by the symbol vp. Note that this signal v
p becomes high level (Vcc) when the high voltage Vpp is applied to the external terminal Vpp, and becomes low level (Vss) otherwise.

The operation of the circuits of FIGS. 6 and 7 constituting the main part of the timing control circuit CNTR will not be described in detail, but from Tables 1 and 2 showing the operation modes and the operation described later. Easy to understand.

The flash EEPROM is in the non-selected state when the chip enable signal CEB is set to the high level and the high voltage is not supplied to the external terminal Vpp.

The chip enable signal CEB is set to low level, the output enable signal OEB is set to low level, the write enable signal WEB is set to high level, the erase enable signal EEB is set to high level, and a high voltage is supplied to the external terminal Vpp. In this state, the read mode is set as described above, the internal chip enable signal ceB is set to the low level, the address decoder activation signal DE, the sense amplifier operation timing signal s.
c and the read signal re are set to the high level.

At this time, the address decoder XDC
In each of R, YDCR and the data input circuit DIB,
As its operating voltage, a low voltage Vcc (about 5V) is supplied from the timing control circuit CNTR. As a result, the sense amplifier SA is put into an operating state and the above-described read operation is performed. At this time, the data line discharge MOSFET deactivating signal SB is set to the low level by the circuit shown in FIG. In response to this, the N-channel MOSFET (FIG. 7) that receives the deactivation signal SB is turned off, and the P-channel MO that also receives the deactivation signal SB.
The SFET (Fig. 7) is turned on. At this time, since the sense amplifier operation timing signal sc is set to the high level, the N-channel MOSFET that receives this signal sc
(FIG. 7) is turned on and also receives the signal sc P
The channel MOSFET (FIG. 7) is turned off.
Therefore, the data line discharge MOSFET gate bias signal DS has two P-channel MOSFs arranged in series.
An intermediate voltage is set according to the conductance ratio between ET (FIG. 7) and three N-channel MOSFETs (FIG. 7), and the data line discharge MOSFETs Q19 to Q21 provided in the data line of the memory array M-ARY are controlled to be in the non-selected state. To discharge the electric charge of the data line.

The chip enable signal CEB is set to the low level, the output enable signal OEB is set to the high level, the write enable signal WEB is set to the low level, the erase enable signal EEB is set to the high level, and the external terminal Vpp is supplied with a high voltage (eg, When about 12 V is supplied, the writing mode is set. At this time, the internal chip enable signal ceB is set to low level, the address decoder activation signal DE and the write mode signal W are set.
P, the write control signal wr, and the write pulse PG are set to the high level, and the gate bias signal DS, the sense amplifier operation timing signal scB, the read control signal re, the data output buffer activation signals DO and DO7.
Are set to low level.

The address decoders XDCR and YDCR are activated by the high level of the signal DE, and the external address signal AX, from the plurality of word lines and the plurality of data lines forming the memory array M-ARY.
One word line designated by AY and one data line are selected. At this time, the address decoder XDC
In the R, YDCR and the data input buffer DIB, the high voltage Vpp is used as the operating voltage of the timing control circuit C.
Supplied from NTR. As described above, since the read control signal re is set to the low level at this time, the MOS
The FET Q16 is turned off, and the gate bias signal D
The discharge MOSFETs Q19 to Q21 are turned off by the low level of S, and the sense amplifier SA is inactivated by the low level of the sense amplifier operation timing signal scB. Further, at this time, since the data output buffer activation signals DO and DO7 are at the low level, each of the data output buffers DOB-0 to DOB-7 is inactivated. The configuration of the data output buffer DOB will be described later with reference to FIG.

The word line to which the selected nodes of the memory cells to be programmed are coupled, in other words, the selected word line has its potential changed by the address decoder XDCR supplied with the high voltage Vpp as its operating voltage. The voltage is set to a high voltage according to the high voltage Vpp, for example, a high voltage of about 12V. On the other hand, the selected data line is set to a high voltage or a low potential by the data input buffer DIB according to the information to be written.

The memory cell is composed of the storage transistor shown in FIG. 16 as described above. In the memory cell whose selected node is coupled to the selected word line and whose input / output node is coupled to the selected data line, that is, in the selected memory cell, electrons are supplied to the floating gate of the storage transistor that constitutes it. , The potential of the selected data line is turned on in response to the high level of the write control signal wr.
High voltage V via TQ18 and data input buffer DIB
High voltage according to pp. As a result, a channel saturation current flows in the memory transistor, and in the pinch-off region near the drain region coupled to the data line, electrons accelerated by the high electric field are ionized to generate electrons having high energy, so-called hot electrons.

On the other hand, the potential of the floating gate of this memory transistor includes the voltage of the control gate connected to the word line and the voltage of the drain region, the capacitance between the semiconductor substrate and the floating gate, and the capacitance between the floating gate and the control gate. It is a value determined by.
As a result, hot electrons are attracted to the floating gate and the potential of the floating gate becomes negative. By setting the potential of the floating gate to be negative, the threshold voltage of the storage transistor into which electrons have been injected rises and becomes higher than that before the electron injection.

On the other hand, in the selected memory cell, when electrons are not injected into the floating gate of the memory transistor which constitutes the selected memory cell, the threshold voltage of the memory transistor does not rise and is held at a relatively low value. It
In order to prevent injection of electrons into the floating gate of the memory transistor that constitutes the selected memory cell, the selected data line is turned on in the drain region of the memory transistor. A low voltage that does not generate hot electrons in the pinch-off region near the drain region may be applied via the MOSFET Q18 and the data input buffer DIB.

A high voltage as described above is applied to the drain region of the storage transistor of the selected memory cell, or
Whether to apply the low voltage as described above is determined by the information to be written. The data input buffer DIB, which will be described later with reference to FIG. 22, forms the above-described high voltage or low voltage according to the information supplied via the external input / output terminal I / O, and the formed voltage is as described above. It is transmitted to the selected data line.

In the memory transistor whose threshold voltage has been increased by injecting electrons into the floating gate, a selection level (for example, 5 V) selection signal is supplied to its control gate in the read mode. Also, that is, even if the word line to which the selection node is coupled is selected, it does not become conductive but becomes non-conductive. On the other hand, since the threshold voltage of the memory transistor in which electrons have not been injected is held at a relatively low voltage, when the selection signal of the selection level is supplied in the read mode, That is, the selection operation of the word line brings it into a conductive state, and a current flows.

In the write mode, a high voltage is not applied to the control gate or / and the drain region of the memory transistor constituting the memory cell which is not selected. Therefore, electrons are not injected into the floating gate, and the threshold voltage of the storage transistor does not change.

The chip enable signal CEB is set to the low level, the output enable signal OEB is set to the low level, the write enable signal WEB is set to the high level, the erase enable signal EEB is set to the high level, and the high voltage Vpp is applied to the external terminal Vpp. If it is supplied, the write verify mode is set. External terminal Vpp
The state is the same as that in the read mode except that the high voltage Vpp is supplied to. Address decoder XDCR, Y
The operating voltage of each of the DCR and the data input circuit DIB is switched from the high voltage Vpp to the low voltage Vcc and supplied.

Writing / writing shown in Tables 1 and 2 above
In the inhibit mode, each decoder is activated, but the high voltage Vpp for writing / erasing is not supplied to each decoder. In this mode, the gate bias signal DS is set to the high level, and the write / write verify / erase preparation period is performed in which the data lines are discharged.

When the chip enable signal CEB and the erase enable signal EEB are set to the low level, the output enable signal OEB and the write enable signal WEB are set to the high level, and the high voltage Vpp is applied to the external terminal Vpp, the erase mode is set. Be started. Figure 21 later
The combination of these external signal voltages is used to instruct the start of the erase mode.
If this state is not maintained, the erase mode does not end.

With respect to the erase mode in the flash EEPROM of this embodiment, an operation flow chart of FIG. 2 showing an example of an algorithm thereof, a concrete circuit diagram of a main part of the internal circuit LOGC shown in FIG. 3 and FIG. Figure 5
This will be described in detail below with reference to the operation timing chart shown in FIG. The internal circuit LOGC functions as an erase control circuit.

Since the circuits shown in FIGS. 3 and 4 perform sequence control for executing the algorithm shown in the flow chart of FIG. 2, the operation timing chart of FIG. It will be easily understood from the description of the erase operation mode with reference to FIG.

In the flowchart of FIG. 2, a series of pre-write operations as indicated by the dotted line in FIG. 2 are executed prior to the actual erase operation. This is the storage information of the memory cells in the memory array M-ARY before erasing, in other words, the threshold voltage of the storage transistor is the presence or absence of writing as described above (presence or absence of injection of electrons into the floating gate). Performed according to different highs and lows. That is, the memory array M-AR before erasing
This is executed because a storage transistor having a high threshold voltage and a storage transistor having a relatively low threshold voltage are mixed in Y.

The above-mentioned pre-write operation is to write in all the storage transistors prior to the electrical erasing operation. As a result, an internal automatic erase according to this embodiment is performed on a memory cell which is in an erased state, that is, an unwritten memory cell (electrons are not substantially injected into the floating gate of the storage transistor constituting the memory cell). The operation prevents the threshold voltage of the memory transistor in the unwritten memory cell from becoming a negative threshold voltage.

In this prewrite operation, first, in step (1), address setting is performed. That is,
The address counter circuit is set so that an address signal for selecting an individual memory cell is generated by the address counter circuit. By this address setting, although not particularly limited, an address signal designating an address of a memory cell to be written first is generated by the address counter circuit.

In step (2), a write pulse is generated and writing (pre-write) is performed to the memory cell designated by the address signal generated by the address counter circuit.

After this writing, step (3) is executed. In this step (3), an address increment is performed in which the address counter circuit is incremented (+1).

Then, in step (4), it is determined whether the address signal generated by the address counter circuit indicates the final address. When the above prewrite is not performed up to the final address (NO)
Returns to step (2) and pre-write is performed.
This is repeated until the final address. After the step (3) of incrementing the address as described above, it is determined whether or not the pre-write has been performed up to the final address, so the actually determined address is the final address + 1. Of course, the step (3) of address increment may be provided after the step (4) of determining the final address. In this case, when the determination is NO, step (3) is provided on the route returning from step (4) to step (2) so that the address is incremented. When the above pre-write is performed up to the final address (YES), the following erase operation is executed.

In step (5), initialization of addresses for erase operation is performed. That is, the address counter circuit is initially designed. In this embodiment, since all the memory cells in the flash EEPROM are erased at once, the initial setting of this address has no special meaning to the erase operation itself. This address setting is necessary for the verify operation (erase verify) performed after the erase operation.

In step (6), an erase pulse for collective erase is generated and the erase operation is performed. After that, the verify operation is performed in step (7) according to the address setting. In this verify operation, as will be described later, the operating voltage is lower than the low-voltage power supply voltage Vcc (for example, 5V) supplied via the external terminal Vcc (for example, 5V) under a low voltage Vcv such as 3.5V. Such a read operation is performed. That is, the address decoder X
The DCR, YDCR and the sense amplifier SA have the above-mentioned low voltage Vcv instead of the power supply voltage Vcc as their operating voltage.
Is supplied.

At this time, the internal circuit LOGC and the timing control circuit CNTR are supplied with the power supply voltage V as their operating voltage.
cc is supplied. In this read operation, if the read signal is "0", that is, if the storage transistor is turned on, it is recognized that the threshold voltage of the storage transistor is in the erased state of 3.5 V or less. , Then step (8) is performed. In this step (8), the address increment of the address counter circuit is performed.

Then, as in the case of the above-mentioned pre-write operation, in step (9), it is determined whether the address signal formed by the address counter circuit indicates the final address. If it is not the final address (N
In (O), the procedure returns to step (7), and the same erase verify operation as described above is performed. By repeating this until the address counter circuit points to the final address,
The erase operation is completed.

As described above, in the present embodiment, since the stored information in the memory array M-ARY is erased at once, in the erase operation described above, the threshold voltage of the write operation is the highest among all the memory cells. The number of erases is determined by the memory transistor whose voltage is increased. That is, the erase pulse is applied (erasing operation) in step (6) until the memory transistor having the highest threshold voltage can be read at 3.5 V, that is, the threshold voltage is low. Then, the erase verify operation in step (7) detects whether or not the storage transistor has the low threshold voltage. That is, the presence or absence of the erase pulse application (erase operation) in step (6) is determined based on the verification result in step (7).

The erase operation mode as described above will be described in detail with reference to the operation timing chart of FIG. 5 together with the specific circuits of FIGS. In the following description, reference is also made to FIGS. 6 and 7 and Tables 1 and 2 described above.

A state in which the chip enable signal CEB is set to the low level, the output enable signal OEB is set to the high level, the write enable signal WEB is set to the high level, and the high voltage Vpp (for example, about 12V) is supplied to the external terminal Vpp. Then, as is clear from the concrete circuit of the timing control circuit CNTR shown in FIG. 6 and Tables 1 and 2, the internal chip enable signal ceB and the erase start signal ecB are at the low level. Therefore, when the erase enable signal EEB changes from the high level to the low level, the flip-flop circuit FF1 is set accordingly.

As a result, the signal ES indicating the erase mode changes from the high level to the low level to enter the erase mode. The internal signal ES2B changes to the low level with a delay of a fixed time determined by the delay time of the delay circuit D1. When the signal ES indicating the erase mode changes to the high level, it is fed back to the NOR gate circuit NOR1. Therefore, the erase mode signal ES is held by this feedback operation until the erase mode signal ER is generated. Therefore, during the erase mode, the NOR gate circuit NOR1 hereafter becomes CEB, OEB, WE represented by the internal signal ec.
The B and EEB signal changes are not accepted. That is, the erase control circuit LOGC does not accept the external control signal as described above and executes the erase sequence. In other words, the erase mode signal ES prevents the change in the external control signal from affecting the internal operation. For example, in FIG. 6, the circuit for forming the decoder activation signal DE is not affected by the signal ceB based on the chip enable signal CEB because the erase mode signal ES is set to the high level.

The pre-write operation is executed before the erase operation is executed. The address increment start signal AIS and oscillator control signal OSC
This activates the oscillator circuit O1. The output signal of the oscillator circuit O1 is divided by the 4-bit binary counter circuit BCS1 to generate a pre-write pulse PP. The generation of the pre-write pulse PP is not limited to the one generated from the frequency division signals OS3 and OS4 obtained by the frequency division as described above and the pre-write control signal PC, and various modifications can be adopted. Needless to say.

The output signal of the counter circuit BCS1 is
It is supplied to the binary counter circuit BCS2. The counter circuit BCS2 operates as an address counter circuit, and the internal address signals A5I, A6I ... A2I.
To occur. These address signals A5I, A6I ...
.. A2I is input to the address buffers XADB and YADB. This address buffer XADB, YADB
The erase mode signal ES is used to switch the input of the. Each of the address buffers XADB and YADB is composed of a plurality of unit circuits having the same structure.

FIG. 9 shows the unit circuit.
In the unit circuit, as shown in the figure, the input of the unit circuit is changed from the external address signals AX and AY supplied through the external terminals AX and AY to the internal address signals AXI and AYI by the high level of the erase mode signal ES. Switched,
Internal complementary address signals ax, axB and ay, ayB to be transmitted to the address decoders XDCR and YDCR are formed. That is, due to the high level of the signal ES, the unit circuits of the address buffers XADB, YADB are prevented from accepting the external address signals AX, AY from the external terminals, and the internal address signals A5I, A6I ...
-Accepts internal address signals AXI and AYI corresponding to A2I.

The counter circuit B is not particularly limited.
CS2 forms the same number of internal address signals AXI and AYI as the external address signals AX and AY. This allows
One memory cell is selected from each memory array M-ARY by the internal address signals AXI and AYI. Information is supplied from the data input buffers DIB-0 to DIB-7 to the selected memory cell and written (pre-write). In this case, the data input buffers DIB-0 to DIB-7 are connected to the external terminals I / O0 to I / O.
Information is formed based on the pre-write pulse PP, not the data from / O7.

When the prewriting is completed for all the addresses of the memory array, the final address signal END becomes high level and the flip-flop circuit FF2 is set. As a result, the automatic erase mode setting signal AE becomes high level and the erase period starts. By the internal signal PSC,
Address increment signal AIS and oscillator control signal O
SC is changed to the low level, and the oscillation circuit O1 and the counter circuits BCS1 and BCS2 are reset. Delay circuit D
The delay time set by 2 is a preparatory period for erasing, and is used for completely deselecting the word lines and discharging the data lines.

After that, the erase start signal ST is delayed by the delay circuit D4.
Is set to the high level for a certain period of time set by, and the flip-flop circuit FF3 is set. After the time set by the delay circuit D5, the erase pulse EPB becomes low level. By the low level of this erase pulse EPB,
The high voltage Vpp is applied to the source of the memory cell through the erase circuit ERC as described above.

Although not particularly limited, the erase circuit ERC is
The circuit is shown in FIG. The signal EPB is basically supplied to the gate of the P-channel MOSFET Q17 through an inverter circuit having a low voltage Vcc as an operating voltage and an inverter circuit having a level shift function having a high voltage Vpp as an operating voltage, and to the low voltage Vcc. Is transmitted to the gate of the N-channel MOSFET Q10 via two stages of inverter circuits having an operating voltage of. In the figure, the signal EXT is different from the EE in the internal automatic erase mode in this embodiment.
This is an external erase mode signal that is set to a high level when the PROM is in a normal erase mode, that is, when the erase operation is performed only during a period set by an external signal.

The structure and operation of the erase circuit ERC are as follows. The NAND gate circuit receiving the erase pulse EPB substantially operates as an inverter circuit when the external erase mode signal EXTE is at a low level. Therefore, the signal EPB is a cutting MOS whose gate is constantly supplied with the power supply voltage Vcc through three inverter circuits.
A P-channel M that constitutes a CMOS inverter circuit whose operating voltage is the high voltage Vpp via a cutting MOSFET whose high voltage Vpp is constantly supplied to the FET and the gate.
It is supplied to the gate of the OSFET. The output signal of the inverter circuit at the final stage is supplied to the gate of the N-channel MOSFET forming the CMOS inverter circuit.

Instead of this structure, an N-channel MOSF
The gate of ET may be connected to the gate of the P-channel MOSFET. A feedback P-channel MOSFET for receiving the level-converted output signal is provided between the gate of the P-channel MOSFET and the high voltage Vpp.
In the circuit of this embodiment, when the erase pulse EPB is set to the low level, the output of the final stage inverter circuit is set to the high level, so that the N-channel MOSFET is turned on and the output signal is set to the low level. As a result, the feedback P-channel MOSFET is turned on and the P-channel M that constitutes the CMOS inverter circuit is formed.
Since the gate voltage of the OSFET is set to a high voltage, this P-channel MOSFET is turned off. Further, since the cutting MOSFET is turned off, the direct current is prevented from flowing from the high voltage Vpp toward the final stage inverter circuit operating at the low voltage Vcc. As a result, the output signal is set to the low level, the MOSFET Q17 is turned on, and the potential of the source region of the memory cell is set to the high voltage V.
Set to pp.

At this time, the gate voltage of the MOSFET Q10 is at a low level, so that it is turned off. When the erase pulse EPB is set to the high level, the output of the final stage inverter circuit is set to the low level, so that the N channel M
The OSFET is turned off, and the P channel MOSFE
T is turned on. As a result, the output signal is high voltage V
It becomes a high level like pp and the above P channel MO
The SFET Q17 is turned off. At this time, the feedback P-channel MOSFET is turned off by the high level of the output signal. At this time, N channel MOSFE
The gate voltage of TQ10 becomes high level. As a result, the MOSFET Q10 is turned on, and the source potential of the memory cell becomes the ground potential of the circuit.

Returning to FIG. 4 again, in the same figure, the oscillating circuit O2 and the binary counter circuit BCS3 have the erase pulse EPB.
Is set to the low level, the erase pulse end signal PE is changed from the low level to the high level and the flip-flop circuit FF3 is reset after the time determined by them has passed. In response to this, the erase pulse EPB changes to the high level, so that the potential of the source of the memory cell is changed to the high voltage V by the erase circuit ERC.
It is switched from pp to the ground potential Vss of the circuit.

After the delay time set by the delay circuit D7, the erase verify signal EV changes to the high level and shifts to the erase verify mode. At this time, the counter circuits BCS1 and BCS2 are electrically disconnected from each other by the automatic erase mode setting signal AE, unlike the pre-write operation, and the counter circuit BCS1 is used to generate a reference pulse for verification. Circuit BCS2
Are used to generate an internal address signal for verifying, not for prewriting.

That is, the output signal OS2 of the counter circuit BCS1 is a high level signal in the first half of the cycle and a low level signal in the second half of the cycle, and the output signals S0 to S7 (8 bits) from the sense amplifier SA during the low level period. High-level / low-level determination (for output)
All-bit signal S output from the sense amplifier SA
When 0 to S7 are at a low level, in other words, in the erased state in which the threshold voltages of the eight storage transistors selected by the counter circuit BSC2 are lowered, the flip-flop circuit FF3 is not set. , Verify address increment signal EAI
In response to the internal address signal AX pointing to the next address
I and AYI are formed by the counter circuit BSC2, and the determination is performed again during the low level period of the signal OS2.

In this way, according to the address increment signal EAI during verification, the internal address signal A
XI and AYI are formed, and their internal address signals AX
The determination of the memory cell is performed according to I and AYI. If one or more bits of the output signals S0 to S7 of the sense amplifier SA are at a high level, that is, if there is a memory cell in which even one bit is not erased, the flip-flop circuit 3 is set by the NOR gate circuit NOR2. Then, the low level erase pulse EPB is generated again. With the low-level erase pulse EPB, the above-described erase operation is performed again, and then the above-described erase verify is performed again.

FIG. 5 shows an example in which the verify period is terminated when it is determined that the erase operation has been performed at the four addresses indicated by the internal signal OS2 and that the erase operation has not been performed at the fifth address. There is. At this time, the action of the delay circuit D8 prevents the last pulse of the signal OS2 from appearing in the address increment signal EAI, and indicates that the last pulse remains at the address determined not to be erased. In other words, the counter circuit BSC2 holds the address signal indicating the address determined not to be erased. Therefore, although not particularly limited, the erase verify after the automatic erase is performed again is executed from the address determined not to be erased before. Here, the basic pulse of the verify mode is the output signal OS2 of the frequency dividing circuit,
It goes without saying that it is not particularly limited to this.

When the memory cells corresponding to all the addresses are verified by repeating the above operation, the end address signal END becomes high level and the flip-flop circuit FF2 is reset as in the case of the end of the pre-write. In response to the reset of the flip-flop circuit FF2, the automatic erase mode setting signal AE changes to low level,
The erase mode end signal ER is set to the high level only during the delay time set by the delay circuit D9.

The high level of the signal ER resets the flip-flop circuit FF1 and delay circuit D1.
After the lapse of the delay time set by, the signal ES indicating the erase mode is changed to the high level, and the state in which the external signal is not accepted is released.

The binary counter circuit BCS4 counts the number of times the erase pulse EPB is generated. A certain number of pulses E
If the erase mode does not end even after counting PB as described above, the abnormality detection signal FAIL is set to a high level to forcibly end the erase mode. That is, the erase mode end signal ER is generated. In addition, the logic circuit which generates the erase mode end signal ER has an internal signal PSTOP.
The gate circuit to which the end address signal END is input is shown. This is because this mode can be ended by the internal signal PSTOP generated by an external signal when erasing is not desired only by prewriting.

In the above description, the erase control circuit LOGC shown in FIG. 3 and FIG. 4 is centered on the timing chart of FIG.
However, in actuality, each signal generated by the erase control circuit LOGC is transmitted via the timing control circuit CNTR to the address buffer, the decoder, the M
Controls OSFET and the like.

Signals DE, SB, s shown in FIGS. 6 and 7
In the signal generation circuits such as c, re, wr, PG, DO, etc., the external terminal C is generated by the signals such as signals ES, AED during the erase mode.
The inputs of EB, OEB, WEB and EEB are disabled and controlled internally. For example, when the erase pulse EPB is at a low level, that is, while the electrical erase is being performed,
The signal DC in FIGS. 3 and 4 becomes high level, and the signal D
E is set to low level, and each decoder XDCR, YDCR
Is deactivated. Therefore, all word lines and all data lines are deselected. The states of the other periods are similarly determined by the output signal of the erase control circuit LOGC shown in FIGS.

The data polling mode is a mode for determining whether or not erasing is in progress. Therefore, EEPRO
It can be regarded as a mode for knowing the internal state of M, that is, a status polling mode. A state in which the chip enable signal CEB is set to the low level, the output enable signal OEB is set to the low level, the write enable signal WEB is set to the high level, the erase enable signal EEB is set to the low level, and the high voltage Vpp is supplied to the external terminal Vpp. It becomes this mode. In this mode, the data polling control signal POLMB becomes low level in the circuits shown in FIGS. 6 and 7. At this time, the data output buffer activation signal DO7 is set to the high level, but the data output buffer activation signal DO7
Is set to a low level by the data polling control signal POLMB.

A concrete circuit of the data output buffer DOB is shown in FIG. Except for the data polling (status polling) control circuit DP, the external input / output terminal I
Data output buffer DOB corresponding to / O0 to I / O6
The configurations of -0 to DOB-6 and the data output buffer DOB-7 corresponding to the external input / output terminal I / O7 are the same in that they are three-state output circuits including a high impedance state. As described in the mode, when the activation signals DO and DO7 become high level, the output signals S0 to S7 from the sense amplifier SA are inverted and output.

On the other hand, in the data polling mode (status polling mode), the activation signal PO
Since LMB is at the low level, the output signal S7 is invalidated, and the output signal of the terminal I / O7 is determined according to the level of the signal ES indicating the erase mode at that time. That is, during the erase mode, the signal ES indicating the erase mode is at a low level, so that a low level signal is output from the external input / output terminal I / O7 and a high level signal is output if the erase operation is completed. R.

FIG. 12 shows a power supply circuit for generating the operating voltage Vcv in the erase verify mode supplied to the sense amplifier SA and the address decoders XDCR and YDCR. This circuit is configured by using a known reference voltage generation circuit VREF that utilizes a silicon bandgap and operational amplifier circuits OP1 and OP2. That is, the reference voltage VR formed by the reference voltage circuit VREF is voltage-amplified by the operational amplifier circuit OP1 according to the gain (R1 + R2) / R2 determined by the resistors R1 and R2 to form the voltage of about 3.5V. . The voltage Vcv is obtained by outputting this voltage through the operational amplifier circuit OP2 of the voltage follower type.

The operational amplifier circuits OP1 and OP2 are activated by the automatic erase mode setting signal AE to generate the voltage Vcv. As a result, it is possible to prevent current consumption in the power supply circuit in other operation modes. As the operational amplifier circuit OP2,
When an output circuit composed of a P-channel MOSFET and an N-channel MOSFET is used as the output circuit, when the operational amplifier circuit is deactivated by the signal AE, the P-channel MOSFET is turned on by the signal AE and a low voltage is applied. Power source voltage Vcc is output. By adopting this configuration, it is possible to add the function of switching the voltages Vcc and Vcv to the power supply circuit by the signal AE. As the reference voltage generation circuit VREF described above, for example, the one disclosed in British Patent 2081458B can be used.

In order to make the operating voltage during the erase verify almost equal to the lower limit power supply voltage Vccmin at which the read operation can be performed on the flash EEPROM, the power supply voltage Vcc in the flash EEPROM in the read mode is set. It is desirable to set it lower. Although it is assumed here that a power supply is built in as shown in FIG. 12, the signal AE is set to the flash EEPROM.
Of the programmable power supply provided outside is controlled by the signal AE, and the voltage Vcv is applied like the sense amplifier SA and the address decoders XDCR and YDCR of the main flash EEPROM. It may be configured to supply to a power circuit. here,
The above-mentioned lower limit voltage Vccmin is the lowest power supply voltage Vcc (the external terminal Vcc of the EEPROM that can read the stored information from the memory cell having the highest threshold voltage among the memory cells forming the EEPROM. Applied).

FIG. 23 shows the address decoder XDCR,
A circuit diagram of a unit circuit forming the YDCR is shown.
Each address decoder is composed of a plurality of unit circuits having the same structure. However, the combination of the supplied internal address signals is different in each unit circuit. FIG. 23 shows one of these unit circuits as an embodiment.

In the figure, UDG is a unit decoder circuit, and is constituted by, for example, a NAND circuit which receives the internal address signal ax (ay) and the address decoder activation signal DE. The output signal of the NAND circuit is supplied to the level conversion circuit having the same configuration as the circuit shown in FIG. In the level conversion circuit of FIG. 23, the high voltage Vp is supplied from the timing control circuit CNTR to the node corresponding to the node to which the high voltage Vpp was supplied in FIG.
p, the power supply voltage Vcc, and the low voltage Vcv are selectively supplied. On the other hand, the power supply voltage Vcc is constantly supplied to the NAND circuit UDG.

As a result, at the time of the write operation or the pre-write, the word line W (the selection line C of the column switch MOSFET C) designated by the internal address signal ax (ay) from the address buffer XADB (YADB).
L), the unit circuit outputs a selection signal having a voltage substantially equal to the high voltage Vpp. Further, during the read operation, a selection signal having a voltage substantially equal to the power supply voltage Vcc is output to the word line W (selection line CL) designated by the internal address signal ax (ay). In the erase verify mode, the address buffer XADB (YAD
A selection signal having a voltage substantially equal to the low voltage Vcv is output to the word line W (selection line CL) designated by the internal address signal ax (ay) from B).

During the erase operation, since the activation signal DE is set to the low level as described above, the voltage substantially equal to the ground potential Vss of the circuit is applied to the word line W (selection line CL) from all the unit circuits. Supplied. A voltage according to the ground potential Vss of the circuit is supplied to the unselected word line W (selection line CL). Further, as described above, at the time of pre-write and erase verify, the internal address signal AXI (AYI) formed by the counter circuit is taken into the address buffer XADB (YADB) instead of the external address signal AX (AY), An internal address signal ax (ay) corresponding to this is formed.

FIG. 22 is a circuit diagram showing an embodiment of the data input buffer DIB. The data input buffer DIB is commonly used when writing data from the external input / output terminal I / O to the memory cell and when writing predetermined data to the memory cell during prewriting. In the write mode, as can be understood from Tables 1 and 2, the write mode signal wp is set to the high level and the prewrite pulse PP is set to the low level.
Therefore, the data supplied to the external input / output terminal I / O is transmitted to the input node of the inverter via the two NOR circuits. The data transmitted to the input node is inverted in phase by an inverter and then supplied to a bias circuit composed of one P-channel MOSFET and two N-channel MOSFETs connected in series.

The above data converted to a predetermined level by this bias circuit is the P channel M for writing.
It is supplied to the gate of OSFET QPI. This P channel MOSFET QPI for writing uses the common data line CD through the MOSFET QL whose gate is supplied with a predetermined bias voltage and the above-mentioned MOSFET Q18.
And to the drain of the memory cell (memory transistor) to be written via the selected data line. The P channel MOSFET QP
I supplies a voltage according to the data to be written to the drain of the memory cell. As a result, data is written in the memory cell. However, if the threshold voltage of the memory transistor of the memory cell becomes negative,
The current Iw flowing through the MOSFET QL or the like becomes high,
As the voltage drop in the MOSFET QL and the like becomes large, sufficient writing cannot be performed as described above. On the other hand, according to the present embodiment, it is possible to prevent the threshold voltage from becoming negative, so that it is possible to prevent the current Iw from becoming high, and it is possible to reliably write data.

During the pre-write operation, since the signal wp is at low level, the data from the external input / output terminal I / O is not taken in. Instead, writing is performed using the pre-write pulse PP as write data.

FIG. 21 is a timing chart focusing on the external input signal and the external output signal in the automatic erase mode described above. When the erase enable signal EEB changes from the high level to the low level at time t1, the latch provided inside the flash EEPROM operates to enter the automatic erase mode. After that, the flash E is erased until the erase is completed at time t4
The EPROM does not accept any external signal other than a combination of external signals indicating a data polling request.

After the erase enable signal EEB is kept at the low level for a certain fixed time determined internally, the CE
The external control signals of B, OEB, WEB and EEB may be in any combination. In the automatic erase mode of this embodiment, the erase is not performed during the low level period of the erase enable signal EEB. Therefore, the above-mentioned fixed time is required for setting the latch circuit shown in FIG. 3 to a predetermined state, etc., and is sufficiently shorter than the time required for erasing the memory cell. Further, the external address signal is not described in this figure, but since it is not taken in internally, any combination may be used.

The figure shows an example of entering the data polling mode at time t2. At time t3 determined by the internal signal delay, the data polling signal is transmitted to the external input / output terminal I /
Appears at O7. From time t3 to time t4, the erase is not completed yet, so the output is low level. When erasing ends at time t4, the level changes to high, and the end of erasing can be detected from outside the flash EEPROM. In the automatic erase mode, external input / output terminals I / O0-I
/ O6 is in a floating state. The external input / output terminal I / O7 is also in a floating state in the automatic erase mode except for the polling mode.

FIG. 24 is a waveform diagram of the erase enable signal EE supplied from the outside when the stored information in the memory cell is erased. FIG. 24A shows the erase enable signal EE in the above-mentioned automatic erase mode.
The waveform diagram of B is shown. FIG. 24B shows the waveform of the erase enable signal EEB when an erase operation and a verify operation are instructed from the outside.
(C) shows a waveform in the case where the erase enable signal EEB is instructed from the outside to simply erase the stored information. All of these waveforms show the case of batch erasing.

In FIG. 24B, during a period EO (for example, 10 ms) in which the signal EEB is at a low level, a memory cell (for example, 1 byte) is actually erased and the signal EEB is set to a high level. Period V
At O, the verify operation accompanied by the read operation from the memory cell (1 byte) is actually performed. Also, FIG.
4C, the erase operation is actually performed on all the memory cells on the chip during the period EO ′ (for example, 1 second) in which the signal EEB is at the low level.

On the other hand, in the above-mentioned automatic erase mode, it is sufficient that the signal EEB is set to the low level for a time sufficient to set the latch circuit and the like shown in FIG. 3 to a predetermined state. Therefore, the erase enable signal EEB
Is held at a low level for the time period shown in FIG.
It may be shorter than that shown in (C), for example, 50 ns
The degree is enough. This is because in the automatic erase mode, the actual erase operation for the memory cell is not executed during the low level period of the erase enable signal EEB.

In this embodiment, the internal structure mainly for the automatic erasing mode has been described.
The erase mode shown in (C) may also be executed.

24D and 24E show the external address signals AX and AY and the output signal of the external input / output terminal I / O in the read cycle. To enter the read mode, it is necessary to set each external signal as shown in Tables 1 and 2 above.
The external address signal and the output signal are shown as described above. For example, from the standby mode to the desired address A
EE the external address signals AX and AY indicating i
By giving the data to the PROM, the data Di held at the address Ai is output from the external input / output terminal I / O. After that, the EEPROM is again set to the standby mode, for example. In this read cycle,
Since the memory cell selection operation and the sense amplifier activation are performed, the cycle time is, for example, 100 to 20.
About 0 ns is required.

On the other hand, in the erase mode shown in FIG. 24A, the pulse width of the erase enable signal EEB may be as short as about 50 ns as described above. for that reason,
As will be described later with reference to FIGS. 14 and 15, it is possible to prevent a device (CPU or the like) for controlling the EEPROM from being exclusively used for the erase operation of the EEPROM for a long time. This erase enable signal EEB [Fig.
The pulse width of (A)] may be shorter than the time required to actually erase the memory cell. This is because, as described above, the erase enable signal EEB does not cause the actual erase operation, but EEPRO.
This is because the erase operation is instructed to M.

In this embodiment, the erase verify is performed for all addresses, but the present invention is not limited to this. It may be changed depending on the required degree of control of the threshold voltage after erasing. For example,
It is also possible to verify only one data line or, in an extreme case, only one representative bit (memory cell). Power supply voltage for verification V
When cv can be set sufficiently lower than the required readable lower limit voltage Vccmin, even with such a method, a sufficiently readable lower limit power source voltage Vccmin can be normally secured. In FIG. 5, PSTOP is a test signal.

FIG. 13 shows an EEP to which the present invention is applied.
A circuit diagram of another embodiment of a ROM is shown. Also in this embodiment, similarly to the embodiment of FIG. 1, only one memory array and its corresponding peripheral circuit are shown. For the whole, see FIG. 20 above.

In the memory cell of the EEPROM of this embodiment, the electric erase is performed on the drain region side instead of the one on the source region side as in the previous embodiment. That is, in this embodiment, the memory array M-
The ARY source line CS is fixedly connected to the ground potential point Vss of the circuit.

The erase circuit ERC and the output nodes of the P-channel MOSFET Q17 and the N-channel MOSFET Q10 which are switch-controlled by the erase circuit ERC are connected to the common data line CD by a P-channel type switch MOSFET Q25.
Connected via. The switch MOSFET Q25 is
The erase pulse EPB as described above is applied to the gate. As a result, the switch MOSFET Q25 is turned on only during the period when the erase pulse EPB is set to the low level, and the high voltage Vpp output via the P-channel MOSFET Q17 which is turned on based on the low level of the erase pulse EPB is used as the common data. Tell the line CD. Further, the address decoder YDCR is a memory array M-A.
In order to collectively erase all the memory cells in the RY, the high voltage Vpp of the common data line CD is transmitted to the data line,
For example, in response to the erase pulse EPB, all the column switch MOSFETs Q7 to Q9 are turned on.

Instead of this configuration, the column decoder YDCR
By forming a selection signal according to the internal or external address, it becomes possible to erase in units of data lines.
Therefore, in the EEPROM of this embodiment, the control of the address decoder YDCR at the time of erase operation is the same as that shown in FIG.
The present embodiment is different from the embodiment. Since other parts are the same as those in FIG. 1, refer to FIG.

FIG. 14 is a block diagram showing an embodiment of a microcomputer system using a flash (FLASH) EEPROM according to the present invention.
The microcomputer system of this embodiment is mainly composed of a microprocessor CPU, a ROM (read only memory) in which programs and the like are stored, a RAM (random access memory) used as a main memory device, and an input / output port I. / OPORT, the batch erase type EEPROM according to the present invention, and a control circuit CONTROL
A liquid crystal display device or a CRT (cathode ray tube) as a monitor connected via the LER is an address bus ADDRES.
S, data bus DATA, and exemplary control signal C
They are connected to each other by a control bus for transmitting ONTROL.

In this embodiment, the display device LCD or C is used.
The 12V power supply RGU necessary for RT operation is set to the above EEP
It is also used as the high voltage Vpp of the ROM. Therefore, in this embodiment, the power supply RGU is controlled by the control signal from the microprocessor CPU so that the terminal Vpp can be operated during the read operation.
Is added to 5V like Vcc. Further, FIG. 15 shows a microprocessor CPU and EEPR.
The connection relationship of each signal focusing on the OM is shown.

EEPROM chip enable terminal CE
In B, an address signal indicating an address space assigned to the EEPROM in the system address is supplied to the decoder circuit DEC to generate a chip enable signal CEB. Further, the timing control circuit TC is provided with an R / W (read / write) signal from the microprocessor CPU,
It receives a DSB (data strobe) signal and a WAIT (wait) signal, and outputs an output enable signal OEB, a write enable signal WEB, and an erase enable signal EEB.
Generate. The data terminal of the microprocessor CPU is coupled to the external input / output terminals I / O0 to I / O7 of the EEPROM via the data bus, and the address terminal of the microprocessor CPU is, except for a part thereof, the EEPROM via the address bus. Of the external address terminals AX and AY.

In the microcomputer system of this embodiment, since the EEPROM has the automatic erasing function as described above, the microprocessor CPU is
The PROM is addressed to generate the signal CEB, and the signals OEB, WEB and EEB for designating the erase mode as shown in FIG. 21 are generated by the combination of the signals R / W, DSB and WAIT. After this, the EEPROM enters the automatic erase mode internally as described above. When the EEPROM enters the erase mode, the address terminals, data terminals and all control terminals become free as described above, and the EEPROM is electrically separated from the microprocessor CPU. Therefore,
The microprocessor CPU simply instructs the erase mode to the EEPROM, and thereafter executes the data processing involving the exchange of information with another memory device ROM or RAM or the input / output port using the system bus. can do.

As a result, the batch erasable type EEPROM can be used as a full function (byte rewritable) EEPROM without sacrificing system throughput.
As with the OM, it is possible to erase the card as it is mounted in the system. After instructing the erase mode as described above, the microprocessor CPU designates the data polling mode to the EEPROM at appropriate time intervals so that the level of the terminal I / O7 of the data bus becomes low level. It is determined whether the erasing operation is completed or not by judging whether the erasing operation is completed or not, and if the erasing is completed and there is data to be written in the EEPROM, the writing is instructed.

The operational effects obtained from the above embodiment are as follows. That is, (1) EE including a memory array in which electrically erasable nonvolatile memory elements are arranged in a matrix
An erase control circuit for performing a read operation on the corresponding memory cell at least once after performing the erase operation on the PROM in accordance with an erase operation instruction from the outside, and controlling the continuation or stop of the erase operation based on the read information. Since the EEPROM itself has an erase confirmation function, that is, the above-mentioned automatic erase function accompanied by reading, by incorporating the above, it becomes possible to perform the erase operation while placing it in the system without burdening the microprocessor. Is obtained.

(2) By adding a pre-write function of writing to all memory cells prior to the above-mentioned erase operation as the erase control circuit, unwritten memory cells become negative by executing the erase operation. It is possible to obtain an effect that it is possible to prevent the threshold voltage of V from being set.

(3) The memory cell is a MOSFET having a two-layer gate structure of a floating gate and a control gate, and information charges accumulated in the floating gate are extracted to a source, a drain or a well by utilizing a tunnel phenomenon. As a result, electrical erasing is performed, so that the area occupied by the memory cell is reduced, and an effect that a large storage capacity can be achieved is obtained.

(4) In the memory cells constituting the memory array, the sources and drains of the entire memory array or a part of the memory cell group are made common, and the common memory cells are collectively electrically erased. By performing the operation, the effect of miniaturizing the memory cell can be obtained as described above.

(5) By providing an address generation circuit for sequentially selecting memory cells as the erase control circuit, it is possible to carry out the pre-write and verify for erase confirmation for all memory cells. Is obtained.

(6) At the time of verifying the memory cell for controlling the continuation and stop of the erasure, the selection potential of the word line transmitted to the control gate is about 3 which is lower than the low voltage Vcc and corresponds to the readable lower limit voltage Vccmin. .5V
By setting the voltage to such a low voltage Vcv as described above, it is possible to obtain the effect that necessary and sufficient erase can be guaranteed.

(7) As a power supply circuit for generating the selection potential of the word line to a relatively low voltage Vcv, it receives a reference voltage formed by a reference voltage generation circuit and receives a desired output voltage based on the gain setting resistance element. A first operational amplifier circuit for converting into a first operational amplifier circuit and an output terminal of a second operational amplifier circuit in the form of a voltage follower that receives the output signal of the first operational amplifier circuit and forms an output voltage It is possible to obtain an effect that an arbitrarily set desired voltage can be obtained with high accuracy without being affected by the variation of.

(8) By providing the EEPROM with a data polling function of outputting an internal state such as continuation or stop of the erase operation to the outside according to an instruction from the outside, the effect that the memory management by the microprocessor is simplified Is obtained.

(9) The EEPROM is mounted in a microcomputer, and an erase operation is automatically performed by an internal erase control circuit in an electrically disconnected state from the microprocessor according to an erase instruction from the microprocessor. To enable the EEP without sacrificing the throughput of the microcomputer system.
The effect that the erasing of the ROM can be executed in the on-board state is obtained.

(10) A memory array in which electrically erasable nonvolatile memory elements are arranged in a matrix and are selected by one gate signal line (word line) and one drain signal line (data line). The erase operation is started according to an erase instruction from the outside, and thereafter, the erase operation is automatically performed regardless of the address signal, input data, or control signal from the outside, and after the erase is completed, the It is possible to obtain a semiconductor nonvolatile memory device capable of performing a desired operation by the address signal, the input data, and the control signal.

(11) A memory array in which electrically erasable non-volatile memory elements selected by one gate signal line (word line) and one drain signal line (data line) are arranged in a matrix. The erase operation is started in accordance with an erase instruction from the outside, and thereafter, regardless of the external address signal, input data, or control signal,
A semiconductor non-volatile memory device that is automatically erased and that can perform a desired operation by an external address signal, input data, or control signal after the erase is completed; and a microprocessor having a predetermined information processing function. An internal erase control including a system bus connecting the semiconductor nonvolatile memory device and a microprocessor, the semiconductor nonvolatile memory device being electrically disconnected from the microprocessor according to an erase instruction from the microprocessor. An information processing system that automatically performs an erase operation by the circuit is obtained.

(12) A non-volatile memory that is electrically writable and erasable and is arranged in a matrix with rows and columns, and a single pulse of a read cycle period or less is input in the erasing. Erase is started by the following, and after that, it is automatically erased regardless of the input of address, data and control signal from the outside, and after the erase is completed, the semiconductor nonvolatile memory which receives the address, data and control signal from the outside The device is obtained.

(13) In an information processing system including electrically erasable and erasable nonvolatile memory arranged in a matrix with rows and columns, the erasing is performed in an information processing system connected to a microprocessor by a system bus. In, the erase is started by inputting a single pulse of the read cycle period or less, and thereafter, the erase is automatically performed regardless of the address, data and control signals from the system bus. An information processing system including a semiconductor nonvolatile memory device that receives a signal from the device can be obtained.

(14) Among the memory cells, the memory cell having the lowest threshold voltage is prevented from having a negative threshold voltage by the erase operation and has the highest threshold voltage. The erase operation of the EEPROM is automatically controlled by the internal erase control circuit so that the memory cell has a threshold voltage that can be read at the lower limit voltage Vccmin by the erase operation.

Although the invention made by the present inventor has been specifically described based on the embodiments, the invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example,
The signals FAIL and ER in FIG. 4 may have a function of outputting them to the outside. In this case, in order to prevent an increase in the number of external terminals, it is desirable to use the data polling function to output. For example, data input / output terminals I / O5 and I
/ O6 is a circuit similar to the data output circuit corresponding to the data input / output terminal I / O7 in FIG. 11, and the signals FAIL and ER may be associated with the gate to which the signal ES is supplied. As described above, other signals indicating the internal operation sequence may be output to the outside as needed.

The memory array M-ARY may be erased by dividing the source line and the word line and designating the memory block to be erased by the combination. As a memory transistor forming a memory cell, a stacked gate structure M used in EPROM is used.
In addition to the OS transistor, a FLOTOX type memory transistor that uses a tunnel phenomenon for the writing operation may be used.

In the above embodiment, the number 1 shown in FIG.
Although one memory transistor is used as one memory cell, one memory transistor shown in FIG. 18 (in this case, substantially two transistors are regarded as one memory transistor) is used as one memory cell. It may be used as a memory cell. That is, according to the present invention, EEPRO using one memory transistor shown in FIG. 19A as one memory cell
Particularly suitable for M. However, it can also be applied to an EEPROM having a memory cell as shown in FIG. 19B (one memory cell is composed of two transistors and defined by two word lines and one data line). .

The high voltage Vpp for writing / erasing is not limited to the high voltage supplied from the outside. That is, if the current flowing during writing / erasing is small,
It is also possible to use a voltage boosted from the power supply voltage Vcc by a known charge pump circuit or the like inside the EEPROM. Further, the internal boosted power source and the external high voltage Vpp may be used together.

In the EEPROM, the circuit portion (CNTR) for controlling the normal writing / reading or the like and the circuit portion (LOGC) for controlling the erasing algorithm may have any configuration as long as the above operation sequence is performed. Such a circuit may be used. That is, FIG. 3 and FIG.
In addition to the random logic circuit as shown in FIGS. 6 and 7, a programmable logic array (PLA), a microcomputer and software are incorporated, or in the above-described embodiment, an asynchronous circuit is used, but a synchronous circuit may be used. As described above, the circuit that realizes the above operation sequence can adopt various embodiments.

Various specific embodiments of the memory array and its peripheral circuits forming the EEPROM can be adopted. Furthermore, EEPROM etc.
It may be built in a digital semiconductor integrated circuit device such as a microcomputer.

In the above description, for ease of explanation, the pair of regions of the memory transistor are defined as the source region and the drain region, but the source and drain are determined by the value of the applied voltage. In the transistor, the present invention can be applied by replacing the above-mentioned source region and drain region with one region (node) and the other region (node).

The present invention is directed to a storage transistor having a stacked gate structure such as used in EPROM, and a FLO.
It is widely applicable to a semiconductor nonvolatile memory device using a TOX type memory transistor and an information processing system using the same.

[0171]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows. That is, in an EEPROM having a memory array in which electrically erasable non-volatile memory elements are arranged in a matrix, a corresponding memory cell is at least once after an erase operation is performed according to an erase operation instruction from the outside. Read-out operation is performed, and an erase control circuit for controlling continuation and stop of the erase operation based on the read-out information is incorporated, and such an EEPROM is mounted on an information processing system including the microprocessor, In accordance with the instruction, the erasing operation is automatically performed by the internal erasing control circuit in a state of being separated from the microprocessor. In this configuration, since the EEPROM itself has an automatic erasing function accompanied by reading the erasure confirmation, in the erasing operation while the EEPROM is mounted in the system, the control from the microprocessor only instructs the erasing start. It's time for
The microprocessor load is not significantly reduced and the system throughput is not sacrificed.

[Brief description of drawings]

FIG. 1 is a circuit diagram of a memory array section and a block diagram of peripheral circuits showing an embodiment of an EEPROM to which the present invention is applied.

FIG. 2 is a flowchart showing an example of an erasing algorithm according to the present invention.

FIG. 3 is a partial circuit diagram of a specific example of an erase control circuit LOGC.

FIG. 4 is another partial circuit diagram of a specific example of the erase control circuit LOGC.

FIG. 5 is a timing chart for explaining an erase operation.

FIG. 6 is a partial circuit diagram of a specific example of the timing control circuit CNTR.

FIG. 7 is another partial circuit diagram of a specific example of the timing control circuit CNTR.

FIG. 8 is a characteristic diagram showing a relationship between an erase time and a threshold voltage of a storage transistor.

FIG. 9 is a circuit diagram showing an example of a unit circuit of address buffers XADB and YADB.

FIG. 10 is a circuit diagram showing an embodiment of an erase circuit ERC.

FIG. 11 is a circuit diagram showing an embodiment of a data output buffer DOB.

FIG. 12 is a circuit diagram showing an embodiment of a power supply circuit for generating an erase verify voltage Vcv.

FIG. 13 is a circuit diagram of a memory array section showing another embodiment of the EEPROM.

FIG. 14 is a block diagram showing an embodiment of a microcomputer system in which the EEPROM is used.

FIG. 15 is a diagram showing the EEPROM and the microprocessor CP.
FIG. 3 is a block diagram showing a connection of an embodiment with U.

FIG. 16 is a structural cross-sectional view for explaining an example of a conventional memory cell.

FIG. 17 is a schematic circuit diagram for explaining the read operation.

FIG. 18 is a structural cross-sectional view for explaining another example of the conventional memory cell.

FIG. 19 is a circuit diagram of a memory cell (A) and a conventional memory cell (B) in an EEPROM to which the present invention is applied.

FIG. 20 is an overall block diagram of an EEPROM that is an embodiment of the present invention.

FIG. 21 is a waveform diagram showing an example of an external signal of the EEPROM to which the present invention is applied.

FIG. 22 is a circuit diagram showing an example of a data input buffer.

FIG. 23 is a circuit diagram showing an embodiment of an address decoder.

FIG. 24 shows erase enable signals (A), (B),
FIG. 6 is a waveform diagram showing (C) and read cycles (D) and (E).

[Explanation of symbols]

XADB, YADB ... Address buffer, XDCR, Y
DCR ... Address decoder, UDG ... Unit decoder circuit, M-ARY ... Memory array, SA ... Sense amplifier,
DIB, DIB-0 to DIB-7 ... Data input buffer, DOB, DOB-0 to DOB-7 ... Data output buffer, CNTR ... Timing control circuit, ERC ... Erase circuit, LOGC ... Erase control circuit (internal circuit), N1 , N2
... CMOS inverter circuit, CS ... Source line, W1, W
2 ... Word line, D1-Dn ... Data line, CD ... Common data line, O1, O2 ... Oscillation circuit, BCS1-BCS4 ... 2
Advance counter circuit, DP ... Data polling control circuit, C
PU ... Microprocessor, ROM ... Read only memory, RAM ... Random access memory, I /
OPORT ... I / O port, EEPROM (FLAS
H) ... Batch erase type semiconductor nonvolatile memory device, RGU ... 1
2V power supply device, LCD ... Liquid crystal display device, CRT ... Cathode ray tube, ADDRESS ... Address bus, DATA ... Data bus, DEC ... Decoder circuit, TC ... Timing control circuit, 3 ... Drain, 4 ... Floating gate, 5 ...
Source, 6 ... Control gate, 7 ... Thin oxide film, 8
... P-type silicon substrate, 9 ... N-type diffusion layer, 10 ... Low-concentration N-type diffusion layer, 11 ... P-type diffusion layer, 12 ... Selected memory cell, 14 ... Non-selected memory cell, 13 ... Selected word line, 1
5 ... Non-selected word line, 16 ... Data line, 17 ... Sense amplifier.

Front page continuation (72) Inventor Tadashi Muto 5-20-1 Kamimizuhoncho, Kodaira-shi, Tokyo Inside Musashi Factory, Hitachi, Ltd. (72) Inventor Yasuro Kubota 5-2-1, Kamimizumoto, Kodaira-shi, Tokyo No. Hitachi Ultra LSI Engineering Co., Ltd. (72) Inventor Kayoshi Shoji 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Within Hitachi Ultra LSI Engineering Co., Ltd. ( 56) References JP-A-61-213096 (JP, A) JP-A-62-129597 (JP, A) JP-A-62-146496 (JP, A) JP-A-63-291297 (JP, A) (58) ) Fields surveyed (Int.Cl. ⁷ , DB name) G11C 16/06

Claims (11)

(57) [Claims] 1. In an erase mode, an erase control cycle in which an erase operation and an erase verify operation are repeated automatically until the erase of a plurality of memory cells to be erased is completed.
And an address generation circuit that sequentially generates address signals.
A, the erase control circuit, the address after the erase operation
Memory cells specified by the response generation circuit
If the erase verify operation is executed and the erase is not sufficient,
A non-volatile semiconductor memory device that re-executes the erase operation, and has a data polling mode that outputs information as to whether or not the erase mode is in effect. 2. A non-volatile semiconductor memory device having a plurality of operation modes, comprising: a plurality of memory cells; and an external terminal to which an external address signal is input in a read mode for reading data stored in the memory cells. In an erase mode including an address signal generation circuit for sequentially generating address signals, the threshold voltage of the memory cell is set to the predetermined threshold level in an erase mode in which the threshold voltage of the memory cell is changed to the predetermined threshold level. A threshold voltage of a memory cell designated by an address signal output from the address signal generating circuit in the erase verify operation. Is a verifier that determines whether the threshold voltage level has changed to the predetermined threshold level by the erase operation. When the threshold voltage of the memory cell designated by the address signal does not satisfy the predetermined threshold level, the erase operation is performed again, and the address signal output from the address signal generating circuit is output. If the threshold voltage of the memory cell specified by the above satisfies the predetermined threshold level, the threshold voltage of the memory cell specified by another address signal output from the address signal generating circuit. Performs a verify operation to determine whether the erase operation has changed to the predetermined threshold level, and further outputs information on whether the erase mode is in progress to the outside of the nonvolatile semiconductor memory device. A non-volatile semiconductor memory device having an output circuit. 3. The non-volatile semiconductor memory device according to claim 2, wherein the address signal generation circuit includes an address counter. 4. The external device according to claim 2, further comprising an external terminal used to output the stored data and output the status of the erase verify operation in the read mode. Nonvolatile semiconductor memory device. 5. The method according to claim 2, further comprising a plurality of word lines to which a plurality of memory cells are connected, wherein in the read mode, one of the plurality of word lines is driven by the external address signal. A nonvolatile semiconductor memory device, characterized in that, in the erase mode, any one of the plurality of word lines is selected by an address signal output from the address signal generating circuit. 6. A nonvolatile semiconductor memory device, comprising: a plurality of memory cells whose threshold voltage changes to a predetermined threshold level when a predetermined voltage is applied; and the memory in a read mode. An external terminal to which an external address signal for reading the data stored in the cell is input, and the predetermined voltage for changing the threshold voltage of the memory cell to the predetermined threshold level in the erase mode. The erase voltage supply circuit for supplying the address signal, the address counter for sequentially generating the address signal, and the threshold voltage of the memory cell designated by the address signal output from the address counter are changed to the predetermined threshold level. And a control circuit for controlling the erase voltage supply circuit and the determination circuit. If the judgment circuit indicates that the threshold voltage of the memory cell designated by the address signal from the address counter does not satisfy the predetermined threshold level, the erase operation is performed. If the threshold voltage of each memory cell specified by the address signal from the address counter satisfies the predetermined threshold level, the voltage supply circuit and then the determination circuit are operated. An address circuit that updates the address signal output from the address counter to a different address signal, operates the determination circuit, and further has an output circuit that outputs information whether or not the erase mode is in progress outside the nonvolatile semiconductor memory device. A non-volatile semiconductor memory device characterized by the above. 7. The memory cell according to claim 6, wherein the plurality of memory cells are connected to a plurality of word lines, and in the read mode, the word line is selected according to the external address signal and the selected word line is selected. A read voltage is supplied, and the determination circuit includes a verify voltage supply circuit that generates a verify voltage different from the read voltage, and the verify voltage supply circuit supplies the word line selected by the address signal from the address counter. The non-volatile semiconductor memory device is characterized in that the verify voltage is supplied. 8. The read mode according to claim 6 or 7, wherein one of the plurality of word lines is selected by decoding the external address signal, and the external address signal is not selected in the erase mode. A non-volatile semiconductor memory device characterized by selecting one of the plurality of word lines by decoding an address signal output from the address counter. 9. The external device according to claim 6, further comprising an external terminal used for outputting the stored data and for outputting a status of the erase verify operation in the read mode. A characteristic non-volatile semiconductor memory device. 10. In an erase mode, an erase control circuit that automatically repeats an erase operation and an erase verify operation internally until the erase of a plurality of memory cells to be erased is completed, and an address for the erase verify operation. A memory cell having an address counter circuit for generating a signal, wherein the erase control circuit initializes the address signal of the address counter circuit, and is designated by the address signal output from the address counter circuit after the erase operation. For the erase verify operation above,
If erasing is insufficient, execute the above erasing operation again,
A non-volatile semiconductor device that performs the erase verify operation on a memory cell designated by a next address signal output from the address counter circuit by incrementing the address of the address counter circuit when the erase is completed. A nonvolatile semiconductor memory device having a data polling mode for outputting information on whether or not the erase mode is in effect. 11. In an erase mode, an erase circuit for performing an erase operation on a plurality of memory cells to be erased, and an address signal designating a part of the memory cells to be erased are generated. An address counter circuit and a determination circuit for performing an erase verify operation for determining whether or not the erase of the memory cell designated by the address signal is completed, and the address is determined after the erase operation is performed by the erase circuit. Performing the erase verify operation on the memory cell specified by the signal,
If the determination circuit determines that the erase is not completed, the erase circuit performs the erase operation again, and if the determination circuit determines that the erase is completed, the address counter circuit outputs. A non-volatile semiconductor device for performing the erase verify operation on a memory cell specified by the next address signal, which has a data polling mode for outputting information on whether or not the erase mode is in effect. Nonvolatile semiconductor memory device.