JP3431444B2 - Pattern drawing method and drawing apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure technique for sequentially exposing (drawing) a pattern using pattern data, and more particularly to a pattern drawing method and a drawing apparatus for performing multiple drawing multiple times.

[0002]

2. Description of the Related Art As an exposure technique for printing a pattern, such as a master plate of a mask, which has a small number of fabrication processes, a sequential exposure (drawing) technique for directly forming a resist pattern from pattern data is adopted. For example, a photomask is exposed based on pattern data using an electron beam or a laser beam.

In the drawing process represented by the electron beam exposure technique, the proximity effect, the drift of the beam current value, the fluctuation of the beam focus position, the change of the resist sensitivity depending on the drawing time, the change of the substrate temperature, etc. are the causes. Therefore, there is a problem that patterns of the same size cannot be formed in the substrate. For example, in a drawing technique using an electron beam, in particular, a proximity effect caused by forward scattering or back scattering cannot be ignored as a cause of pattern-dependent dimensional variation.

Conventionally, although some proximity effect correction methods have been proposed and realized, they still do not meet the requirements in terms of processing speed and accuracy. In addition, when correction calculation is performed for all patterns, the amount of data and the amount of calculation processing become enormous. Therefore, there is a technology that realizes speedup and data amount compression by performing calculation using a representative value for each area. It has been adopted. Also, when trying to perform the process of correcting the exposure amount in real time by using the drawing data at the time of exposure, that is, the attempt to improve the processing speed by performing the proximity effect correction in real time in synchronization with the drawing is the beam control. It is required to calculate at a speed several times faster than data generation, which is difficult to realize.

In the proximity effect correction, since the correction result is subject to the proximity effect again, in the calculation of the correction value, the process of repeatedly converging the calculation using the calculation result is performed, so that the proximity effect correction data is obtained in real time. It is difficult to realize it, or it requires a high-speed system with a high degree of parallelism, and the throughput improvement effect cannot be obtained in terms of cost. In the process synchronized with the drawing, it is easy to perform the exposure by reflecting the influence of the exposed portion, but the influence of the exposure of the pattern adjacent to the exposed portion cannot be ignored. Further, it is pointed out that not only the correction of the proximity effect but also the drift of the beam irradiation amount or the deterioration of the accuracy such as the dimension depending on the time from the exposure to the development processing.

[0006]

As described above, the conventional proximity effect correction technique has a problem that it is difficult to achieve both processing speed and accuracy. Further, not only the proximity effect correction, but for example, the drift of the beam irradiation amount or the deterioration of the accuracy such as the dimension depending on the time from the exposure to the development processing is performed by using the predicted value in advance. However, it was not enough in terms of accuracy.

The present invention has been made in view of the above circumstances, and an object thereof is to draw a pattern capable of improving correction accuracy such as proximity effect while keeping a decrease in processing speed to a minimum. A method and a drawing apparatus are provided.

[0008]

[Means for Solving the Problems]

(Structure) In order to solve the above problems, the present invention employs the following structures. (1) In a pattern drawing method for forming a desired pattern on a sample using a charged beam or an electromagnetic wave beam,
At least two times of multiple drawing are performed, and the drawing conditions are changed at an arbitrary number of times of multiple drawing and another arbitrary number of times.

(2) In a pattern drawing method for forming a desired pattern on a sample by using a charged beam or an electromagnetic wave beam, at least two arbitrary number of times of multiple drawing are performed, and the drawing condition is obtained at each number of multiple drawing. To change each.

(3) In a pattern drawing method for forming a desired pattern on a sample by using a charged beam or an electromagnetic wave beam, at least two arbitrary times of multiple drawing are performed, and at an arbitrary number of times of multiple drawing. At another arbitrary number of times, the irradiation amount is changed according to the position of the pattern, and the proximity effect is corrected with a predetermined accuracy by the sum of the irradiation amounts of all the times of writing.

(4) When performing multiple drawing, at least 1
Using the already drawn data or the drawing result of the times, obtain the corrected irradiation amount according to the pattern position for performing the proximity effect correction, and use the corrected irradiation amount for the subsequent drawing. (5) When performing multiple writing, during the writing of a certain number of times of drawing, a process of obtaining a part of the correction irradiation amount according to the pattern position for correcting the proximity effect is performed, and at the time of subsequent drawing Drawing while modulating the irradiation dose using the results obtained at the time of drawing before that.

(6) By using the charged beam or the electromagnetic beam to draw the same drawing pattern a plurality of times,
In the pattern drawing method for forming a desired pattern on a sample, the drawing area is divided into small areas during the first drawing,
A step of creating representative figure pattern data having an area equal to the area sum of the patterns included in each small area and matching the composite centroid of the original pattern, and using the representative figure pattern data at the time of the second drawing And the step of obtaining the dose data corresponding to the position of each small area, and at the time of the third and subsequent drawing,
A step of obtaining a corrected dose according to the pattern position based on the dose data created at the time of the second writing, and changing the dose at the time of writing according to the corrected dose corresponding to the obtained pattern position. thing.

(7) In a pattern drawing apparatus for forming a desired pattern on a sample by using a charged beam or an electromagnetic wave beam, a means for performing at least two arbitrary times of multiple writing and an arbitrary number of times of multiple writing And a means for changing the irradiation amount according to the position of the pattern at any other times.

(8) In a pattern drawing apparatus for forming a desired pattern on a sample by using a charged beam or an electromagnetic wave beam, a means for performing multiple drawing at least twice any number of times and at least one previously written data or The present invention is provided with a means for obtaining an irradiation amount according to a pattern position for performing proximity effect correction using a drawing result, and an irradiation amount control means for changing the irradiation amount at the time of drawing according to the obtained irradiation amount. The sum of the irradiation doses corresponding to the pattern positions of all the writings is set to the amount capable of correcting the proximity effect with desired accuracy.

(9) By using the charged beam or electromagnetic wave beam to draw the same drawing pattern a plurality of times,
In a pattern drawing apparatus that forms a desired pattern on a sample, the drawing data is used for the first drawing, and the drawing area is divided into small areas, and an area equal to the sum of the areas of the patterns included in each small area is set. A means for creating representative figure pattern data that matches the composite center of gravity of the original pattern, and a second drawing is performed using the drawing data, and the representative figure pattern data is used to determine the position of each small area. And a drawing data used for the first and second drawing at the time of the third and subsequent drawing, and a correction according to the pattern position based on the irradiation data created at the second drawing A means for obtaining an irradiation dose and changing the irradiation dose at the time of drawing according to the corrected irradiation dose according to the obtained pattern position.

(10) In parallel with or during writing, a plurality of factors such as a dose amount, a focus position, and a drawing time, which affect the pattern dimension accuracy are measured, and then at least one accuracy-corrected drawing is performed. thing.

(11) An average variation factor of the pattern accuracy for the divided areas is calculated based on the drawing pattern data or the drawing conditions, and an average accuracy correction value is calculated for the patterns of the divided areas, or Depending on the position of each drawing pattern or the drawing order, one or more divided areas adjacent to the correction value of the divided area where the pattern is located, or the divided area within the adjacent area of the set range. Apply the smoothed correction value to each drawing pattern based on the average accuracy correction value of the area, and repeat the drawing.

(12) The drawing data is calculated and exposed by changing the division. (13) The charged beam is an electron beam or an ion beam, and the electromagnetic wave beam is a light beam or an X-ray beam.

(Function) According to the present invention, the drawing condition such as the irradiation amount is changed at an arbitrary number of times of multiple drawing and another arbitrary number of times, and the proximity effect is obtained by summing the irradiation amounts of all the times of drawing. Is corrected with a predetermined accuracy. In particular, using the already drawn data or the drawing result, the corrected irradiation amount according to the pattern position for performing the proximity effect correction is obtained, and the corrected irradiation amount is used for the subsequent drawing.

As described above, the proximity effect correction accuracy can be improved by repeating the process of calculating the accuracy deterioration factor from the drawing result and performing the correction drawing. Also,
Since the correction data calculated using the drawing data is used for the next drawing data, the correction is added to the next drawing based on the actual drawing result, so that the exposure data can be easily generated and the processing speed is reduced. The accuracy can be improved without inviting.

In addition, in multiple overlapping drawing, at least at the first drawing, the drawing is performed without correction, and at the same time, the correction calculation for the next drawing is performed, so that the drawing system is corrected. No loss time for calculation. Therefore, the effective throughput of the system is improved.

[0022]

DETAILED DESCRIPTION OF THE INVENTION The details of the present invention will be described below with reference to the illustrated embodiments. First, a variable shaped beam (VSB) with an acceleration voltage of 50 keV used in each embodiment of the present invention.
The drawing device will be described.

FIG. 1 is a schematic configuration diagram showing an electron beam drawing apparatus used in the embodiment of the present invention. In the figure, 10 is a sample chamber, and a sample table 12 on which a target (sample) 11 is placed is accommodated in the sample chamber 10. Two
Reference numeral 0 denotes an electron optical lens barrel, and this electron optical lens barrel 20 includes an electron gun 21, various lens systems 22a to 22e, and various deflection systems 2.
3 to 26, a blanking plate 27a, and beam forming aperture masks 27b and 27c. Also,
Reference numeral 31 is a sample stage drive circuit unit, 32 is a laser length measurement system, 33 is a deflection control circuit unit, 34 is a blanking control circuit unit, and 35 is a
Is a variable shaped beam size control circuit unit, 36 is a buffer memory and control circuit, 37 is a control computer, 38 is a data conversion computer, and 39 is a CAD system.

The electron beam emitted from the electron gun 21 is
ON / OFF control is performed by the blanking deflector 23. By adjusting the irradiation time (beam ON time) at this time, this device can change the irradiation amount according to the irradiation position. The beam that has passed through the blanking plate 27a is shaped into a rectangular beam by the beam shaping deflector 24 and the beam shaping aperture masks 27b and 27c, and the size of the rectangle is variable. Then, the shaped beam is deflected and scanned on the sample 11 by the scanning deflectors 25 and 26, and the sample 1 is scanned by this beam scanning.
A desired pattern is drawn on top of the pattern 1. The standard acceleration voltage of the electron beam in this apparatus is 50 kV, and the maximum size of the variable shaped beam that can be generated is a rectangle having a height of 2 μm and a width of 2 μm.

A conceptual diagram of the structure of data (EB data) that can be input to this device is shown in FIG. This is a structure that realizes data compression for proximity effect correction using the representative figure method (Reference, Japanese Journal of Applied Ph.
ysics; T. Abe, S. Yamasaki, T. Yamaguchi, R. Yoshikawa
& T. Takigawa, Vol.30, p2965 (1991)).

The irradiation amount is set for each small area (for example, 2 μm □) separately from the graphic data. Further, as the graphic data, the graphic before the shot division is defined, and the data is compressed by the definition of the repeated array. The pointer setting in the figure is performed for each 40 μm × 40 μm subfield. With respect to this data structure, the buffer memory and control circuit 36 in FIG. 1 performs the following processing while reading the pointer data group.

(1) Data is developed from position information and array information to determine the position of a figure. (2) The figure is divided into shots while utilizing the result of (1). (3) The center value of the shot is calculated with the reference position of the subfield (for example, the lower left corner) as the origin.

(4) A small area to which the central value of (3) belongs is determined. (5) A dose data set is selected from the pointer to the dose data set, and the dose data corresponding to the small area obtained in (4) is obtained from this set.

(6) The dose corresponding to the shot data is sent to each circuit. Next, each embodiment of the present invention will be described. (First Embodiment) A case of performing quadruple writing using the electron beam writing apparatus described in FIG. 1 will be described in detail with reference to FIG.

First, at the time of the first drawing, the drawing data (a) is transferred from the data conversion computer 38 to the control computer 37. When a drawing start command is activated by the control computer 37, the circuits 31 to 36 enter a drawing waiting state. The drawing data is transferred from the control computer 37 to the buffer memory and control circuit 36, and this circuit 36 starts the expansion of the drawing data.

In the buffer memory and control circuit 36, the drawing data is expanded, the irradiation time data is sent to the blanking control circuit section 34, the pattern shape and size data is sent to the variable shaped beam size control circuit section 35, and the pattern position. The data is sent to the deflection position control circuit unit 33. As a result, the blanking time, the shaping deflection voltage of the shaping deflector 24, and the voltages of the scanning deflectors 25 and 26 are controlled according to the desired irradiation time, pattern size, shape, and pattern position. By performing this for all the patterns defined on the drawing data, the first drawing is completed. At the time of the first drawing, since the drawing data (a) does not include the irradiation amount according to the pattern position, all patterns are drawn with a constant irradiation amount that does not depend on the position.

In parallel with the first drawing, the control computer 37
Is the same drawing data (a) as the first drawing data (a)
In order to obtain the irradiation amount according to the pattern position using, the drawing area is divided into small areas, and the representative figure pattern data (c) is created from the original drawing pattern in each of the divided small areas. Here, the representative figure pattern is a pattern having an area equal to the sum of the areas of the patterns included in each small region, and the position of which coincides with the composite center of gravity of the original pattern.

Next, the second drawing is performed in exactly the same way as the first drawing by using the same drawing data (a) as the first drawing. At this time, as will be described later, the boundary of the deflection field between the first drawing and the second drawing may be shifted, or the boundary of the shot may be shifted. In parallel with the second drawing, the representative figure pattern data (c) created by the control computer 37 at the first drawing is used to calculate the dose data corresponding to the position (b) of each small area, and A dose table (d) corresponding to a small area is created. As the dose data Di in the i-th small area, Di = 1 / (1/2 + ηUi) (1) was used. η indicates the ratio of backscattering and forward scattering. Further, Ui represents the influence of backscattering from the surrounding representative pattern including the small area for which Di is calculated,

[0034]

[Equation 1] Is. Ri represents the position of the i-th small area, Rj represents the position of the j-th representative figure, and σb represents the spread of backscattering. Although the formula (1) is used in the present embodiment, other approximate expressions may be used.

At the time of the third drawing, the exposure data (a) used for the first and second drawing as well as the dose table (d) created at the second drawing are stored in the buffer memory and the control circuit 36. Transfer to. Then, the circuit 36 calculates the pattern position when the drawing data is expanded, and
The dose data of the small area including the pattern position is determined by referring to the dose table, and the dose data is sent to the blanking control circuit unit 34. Thereby, the pattern is drawn in the irradiation time according to the irradiation amount.

The fourth and subsequent drawing operations may be performed in exactly the same way as the third drawing operation. FIG. 4 shows the flow of the drawing process in this embodiment. As described above, by performing the proximity effect correction processing such as the creation of the representative figure pattern data and the creation of the dose table in parallel with the first and second drawing,
It is possible to shorten the drawing time and obtain a desired drawing accuracy.

The proximity effect correction can be performed with the total irradiation amount of the quadruple drawing as follows. First, the standard irradiation amount given to the pattern is Ds.
In the first and second drawing, the irradiation amount is not corrected, so that the drawing amount is Ds / 4. The third and fourth times are corrected as described below by the obtained corrected irradiation amount Dc and drawing is performed.

(Dc-Ds) / 2 + Ds / 4 (3) The total from the first time to the fourth time is Dc, and the proximity correction is performed with the total irradiation amount. The same can be done with quintuple drawing or more.

In the above description, the case of quadruple drawing has been described, but it is possible to carry out in the same manner for arbitrary n-fold drawing of triple drawing or more. Further, in the above description, the control computer 37 performs the representative figure creating process and the dose table creating process in parallel with the first drawing and the second drawing, respectively. However, if the processing speed of the computer corresponds to the drawing time, The representative figure creating process and the dose table creating process may be performed at the time of the second drawing, and the dose may be drawn according to the position of the pattern from the second drawing. In addition, the control computer 3
Instead of 7, the representative circuit may perform the representative figure creating process and the dose table creating process.

Further, in the case of quadruple drawing, the whole drawing may not be overlapped but may be drawn little by little. Specifically, as shown in FIG. 5, by sequentially performing scans that are shifted by, for example, 1/4 of the width that can be exposed in one stage scan, the 3/4 region overlaps with the exposure region immediately before that, and The / 4 area is a new exposure area and the scan is repeated. Then, the exposure pattern is four-fold drawn by the overlap of the four scan exposures.

As described above, according to this embodiment, the representative figure pattern data (c) is created from the original drawing pattern at the time of the first drawing, and the representative figure pattern data (c) is used at the time of the second drawing. A dose table (d) corresponding to a small area is created, and correction drawing is performed by referring to the dose table (d) at the time of the third and subsequent drawing. That is, it is possible to improve the correction accuracy of the proximity effect by repeating the process of calculating the accuracy deterioration factor from the drawing result and performing the correction drawing. Moreover, since the correction data calculated by using the drawing data is used for the next drawing data, the accuracy can be improved without lowering the processing speed.

By using a high-speed computer or a dedicated hardware, it is possible to execute all processes from the creation of the representative figure to the creation of the dose table during the first drawing.

(Second Embodiment) In the first embodiment,
Although the approximate formula as described above is used to obtain the dose at each small region position, in the present embodiment, in order to further improve the accuracy of proximity effect correction, the following formula is used to obtain the corrected dose. A case where multiple drawing is applied to will be described.

[0044]

[Equation 2]

In the above method, the calculated irradiation amount is used to successively correct the irradiation amount, so that it is possible to obtain a higher correction accuracy than in the case of the first embodiment. It will be described with reference to FIG. 6 that this method can be used together with multiple drawing as follows.

In parallel with the first drawing, the control computer 37
Uses the same drawing data (a) as the first drawing data and divides the drawing area for obtaining the irradiation amount according to the pattern position into small areas. Then, in each small area, a representative figure pattern (c) is created from the original drawing pattern. Similar to the first embodiment, the representative figure pattern has an area equal to the sum of the areas of the patterns included in each small area, and the position is a pattern in which the composite centroid of the original pattern is matched.

Next, for the second drawing, the drawing data (a)
By using the representative figure pattern data (c) created by the control computer 37 at the time of the first drawing in parallel, and the irradiation amount data corresponding to the position of each small area. Is calculated using the equation (4), and a dose table (d) corresponding to each small area is created.

At the time of the third drawing, the exposure data (a) used for the first and second drawing as well as the dose table (d) created at the second drawing are stored in the buffer memory and the control circuit 36. Transfer to. Then, the circuit 36 calculates the pattern position when the drawing data is expanded, and
The dose data of the small area including the pattern position is set to D0.
The irradiation amount table (d) is determined and the irradiation amount data is sent to the blanking control circuit unit 34. Thereby, the pattern is drawn in the irradiation time according to the irradiation amount.

Here, in parallel with the third drawing,
D0 dose table (d) and representative figure pattern (c)
From the above, the representative figure pattern data (c) 'with the weight of D0 represented by the equation (7) is created, and the dose table (e) of D1 having a higher accuracy than D0 is created using the equation (5). To do.

At the time of the fourth drawing, the dose data (a) of the D1 created at the time of the third drawing is transferred to the buffer memory and the control circuit 36 together with the drawing data (a) used up to the third time. To do. Then, the circuit 36 calculates the pattern position when developing the drawing data, determines the dose data of the small area including the pattern position by referring to the dose table of D0, and blanks the dose data. It is sent to the control circuit unit 34. Thereby, the pattern is drawn in the irradiation time according to the irradiation amount.

Here, in parallel with the fourth drawing,
D1 weighted representative figure pattern data (c) ″ represented by equation (7) from (d) ′ used to create the dose table (e) of D1 and representative figure pattern (c) ′ And the dose table (f) of D2 having a higher accuracy than D1 is created using the equation (4).

At the time of the fifth drawing, the drawing data (a)
And using the dose table (f) of D2,
In parallel, similarly to the third and fourth times described above, a more accurate D3 dose table is created in parallel with drawing. The same applies to the sixth and subsequent times. Here, as in the case of the first embodiment, the boundary of the deflection field of drawing may be shifted or the boundary of shot may be shifted during each drawing.

In order to perform the proximity effect correction with the total irradiation amount in the quadruple writing, the following is done. The standard irradiation amount given to the pattern is Ds.

[0054] Ds / 4 in the first drawing (no correction) Ds / 4 in the second drawing (no correction) And

Since the first correction amount Dc is used in the third drawing and the second correction amount Dc + Dc 'is used in the fourth drawing, Ds / 4 + (Dc-Ds) / 2 in the fourth drawing is used in the third drawing. In drawing, Ds / 4 + (Dc-Ds) / 2 + D
It suffices to set c ′ and the irradiation amount, and the total from the first time to the fourth time becomes Dc + Dc ′, and the proximity effect correction is performed. This is also the case with quintuple drawing or more.

As described above, according to the present embodiment, the drawing time is shortened by performing the proximity effect correction processing such as the creation of the representative figure pattern data and the creation of the dose table in parallel with the drawing in the multiple drawing. It is possible to obtain desired drawing accuracy. Furthermore, by simultaneously creating the dose table and using the dose table being drawn to create a dose table to be used for the next drawing, it is possible to further improve the proximity effect correction accuracy. The flow of the drawing process of this embodiment is shown in FIG.

(Third Embodiment) In the second embodiment, the iterative approximation may be terminated halfway depending on the required correction accuracy. That is, drawing is performed as follows.

In FIG. 6, in parallel with the first drawing, the control computer 37 uses the same drawing data (a) as the first drawing data to obtain the irradiation amount according to the pattern position. The drawing area is divided into small areas, and a representative figure pattern (c) is created from the original drawing pattern in each small area. Similar to the first embodiment, this representative figure pattern has an area equal to the sum of the areas of the patterns included in each small area, and the position is a pattern that coincides with the composite center of gravity of the original pattern.

Next, for the second drawing, the drawing data (a)
By using the representative figure pattern data (c) created by the control computer 37 at the time of the first drawing in parallel, and the irradiation amount data corresponding to the position of each small area. Is calculated using the equation (4), and a dose table (d) corresponding to each small area is created.

At the time of the third drawing, the dose data (a) created at the second drawing as well as the drawing data (a) used for the first and second drawing are stored in the buffer memory and the control circuit 36. Transfer to. Then, the circuit 36 calculates the pattern position when the drawing data is expanded, and
The dose data of the small area including the pattern position is set to D0.
The irradiation amount table (d) is determined and the irradiation amount data is sent to the blanking control circuit unit 34. Thereby, the pattern is drawn in the irradiation time according to the irradiation amount.

Here, in parallel with the third drawing,
D0 dose table (d) and representative figure pattern (c)
From the above, the representative figure pattern data (c) 'with the weight of D0 represented by the equation (7) is created, and the dose table (e) of D1 having a higher accuracy than D0 is created using the equation (5). To do.

At the time of the fourth and subsequent drawing, the drawing data (a) used up to the third time and the D1 dose table (e) created at the time of the third drawing are stored in the buffer memory and the control circuit 36. Forward. Then, the circuit 36 calculates the pattern position when developing the drawing data, determines the dose data of the small area including the pattern position by referring to the dose table of D0, and blanks the dose data. It is sent to the control circuit unit 34. Thereby, the pattern is drawn in the irradiation time according to the irradiation amount.

That is, in the second embodiment, the accuracy of the irradiation amount becomes higher each time the number of times of multiple drawing is increased, whereas in the present embodiment, the successive approximation is terminated according to the required correction accuracy. is there. Even with such a method, sufficient accuracy can be obtained for most patterns. FIG. 8 shows the flow of the drawing process in this embodiment.

Further, as in the case of the first embodiment, the boundary of the deflection field of drawing may be shifted in each drawing, or the boundary of the shot may be shifted. As described above, by performing the proximity effect correction processing such as the creation of the representative figure pattern data and the creation of the dose table in parallel with the drawing in the multiple drawing, the drawing time is shortened and the desired drawing accuracy is obtained. be able to.

In the first to third embodiments, the case where the corrected irradiation amount of the proximity effect is obtained at each drawing of the multiple drawing and the corrected irradiation amount obtained at the next drawing is used for drawing is described in detail. However, the present invention is not limited to the proximity effect correction. For example, drawing that reflects dimensional fluctuations and position fluctuation factors that occur during multiple writing, such as changes in beam current density, beam drift, stage position drift, and substrate deformation due to temperature changes, is performed by sequentially changing writing conditions during multiple writing. By doing so, it is possible to perform the correction to form a highly accurate pattern.

Further, although the electron beam drawing apparatus has been described as an example in the embodiment, it can be applied to other charged beam drawing apparatus such as an ion beam. Further, a drawing apparatus using an electromagnetic wave beam such as a laser beam, an ultraviolet ray, an X-ray, etc. can also be used by appropriately changing it. In addition, various modifications can be made without departing from the scope of the present invention.

[0067]

As described above in detail, according to the present invention, the drawing conditions such as the irradiation amount are changed at an arbitrary number of times of multiple drawing and another arbitrary number of times, and the irradiation amount of all the times of drawing is changed. By correcting the proximity effect with a predetermined accuracy based on the sum of the above, it is possible to improve the correction accuracy while keeping the decrease in processing speed to a minimum.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing an electron beam drawing apparatus used in an embodiment of the present invention.

FIG. 2 is a schematic conceptual diagram of a data structure used in an electron beam drawing apparatus.

FIG. 3 is a diagram for explaining a state of drawing processing according to the first embodiment.

FIG. 4 is a diagram showing a drawing processing flow in the first embodiment.

FIG. 5 is a diagram showing a method of shifting a boundary of a deflection field at the time of drawing.

FIG. 6 is a diagram for explaining how a drawing process is performed in the second and third embodiments.

FIG. 7 is a diagram showing a drawing processing flow of the second embodiment.

FIG. 8 is a diagram showing a drawing processing flow according to a third embodiment.

[Explanation of symbols]

10 ... Sample chamber 11 ... Target (sample) 12 ... Sample stand 20 ... Electro-optical lens barrel 21 ... Electron gun 22a to 22c ... Lens system 23-26 ... Deflection system 27a-27c ... Aperture mask 36 ... Buffer memory and control circuit 37 ... Control computer 38 ... Computer for data conversion 39 ... CAD system 51 ... Wafer 52 ... Chip area 53 ... Small area 54 ... Drawing pattern

─────────────────────────────────────────────────── --- Continued from the front page (56) References JP-A-2-39515 (JP, A) JP-A-4-63419 (JP, A) JP-A-4-212407 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (4)

(57) [Claims] 1. A pattern exposure method for forming a desired pattern on using a charged beam or electromagnetic radiation beam samples, perform multiple writing of any number of at least twice, and draws any number eyes with multiple writing Inside the correction of the proximity effect
Obtain a part of the correction dose according to the pattern position to perform
Is executed, and at the time of subsequent drawing,
Modulate the dose using the results obtained during the previous drawing
A pattern drawing method characterized by performing drawing while performing . 2. A pattern exposure method for forming a desired pattern using a charged beam or electromagnetic radiation beam on the sample, perform multiple writing of any number of at least twice, and draws any number eyes with multiple writing Inside the correction of the proximity effect
Obtain a part of the correction dose according to the pattern position to perform
Is executed, and at the time of subsequent drawing,
Modulate the dose using the results obtained during the previous drawing
While performing drawing, a proximity drawing effect is corrected with a predetermined accuracy by summing the irradiation doses of all times of drawing. 3. A pattern drawing method for forming a desired pattern on a sample by drawing the same drawing pattern a plurality of times by using a charged beam or an electromagnetic wave beam. In the first drawing, the drawing area is a small area. The process of creating representative figure pattern data that has an area equal to the area sum of the patterns included in each small area and that matches the composite center of gravity of the original pattern, and the representative figure pattern at the time of the second drawing. The step of obtaining the dose data corresponding to the position of each small area using the data, and the correction dose corresponding to the pattern position based on the dose data created at the time of the second writing at the time of the third and subsequent writing. And a step of changing the irradiation dose at the time of drawing according to the corrected irradiation dose according to the obtained pattern position. 4. A pattern drawing apparatus that forms a desired pattern on a sample by drawing the same drawing pattern a plurality of times using a charged beam or an electromagnetic wave beam, and performs the first drawing using the drawing data. At the same time, the drawing area is divided into small areas, and means for creating representative figure pattern data having an area equal to the sum of the areas of the patterns included in each small area and matching the composite centroid of the original pattern, and the drawing data And a means for obtaining the dose data corresponding to the position of each small area by using the representative figure pattern data, as well as performing the second drawing using, and for the first and second drawing during the third and subsequent drawing. The corrected irradiation amount corresponding to the pattern position is obtained based on the irradiation data created at the second drawing together with the writing data that has been written, and the corrected irradiation amount corresponding to the obtained pattern position. Accordingly pattern drawing apparatus characterized by comprising and means for changing the irradiation amount in the drawing.