JP3429014B2 - Method and apparatus for gas deposition of ultrafine particles - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for gas deposition of ultrafine particles.

[0002]

2. Description of the Related Art FIG. 5 shows a conventional gas deposition apparatus 50.
This means that when the valve 9 is opened and the vacuum pump 10 is operated, the inside of the ultrafine particle generation chamber 51 is evacuated, and a potential is applied to the electrode 6 by the resistance heating power source 7. Thereby, the basket-shaped filament 5 made of tungsten is heated, and the evaporation raw material 4 is melted and becomes ultrafine particles and starts to evaporate. The evaporated evaporation material 4 is mixed with the carrier gas supplied from the cylinder 14 through the flow rate control valve 13, the flow meter 12 and the stop valve 11 to become an aerogas state, and this aerogas forms a film from the inside of the ultrafine particle generation chamber 51. It is transported into the chamber 52 via the transport pipe 53. In the film forming chamber 52, the evaporation raw material 4 forms a deposited film of ultrafine particles on the substrate 20 by high-speed injection of aerosol from a thin nozzle 19 formed at the tip of the transfer pipe 53.

The amount of aerosol-shaped ultrafine particles transported from the ultrafine particle generation chamber 51 to the film formation chamber 52 is the amount of ultrafine particles deposited on the substrate 20, and the deposited film of ultrafine particles having a uniform structure on the substrate 20. Need to create. As elements for forming the deposited film of this uniform structure, the evaporation amount of ultrafine particles (this is affected by the power input to the evaporation source, the pressure in the ultrafine particle generation chamber, the type of carrier gas), the pressure of the carrier gas. And the flow rate have a large effect.

Therefore, in order to monitor the evaporation amount of the ultrafine particles in the carrier gas, the He-Ne laser diffraction method is used, and the observation holes 54a, 54 are formed in the wall portion of the ultrafine particle generating chamber 51.
b, the He-Ne laser projectile 56 and the detector 5 are provided.
5 and 5 are arranged so as to face each other through the viewing holes 54a and 54b,
The detector 5 irradiates a laser beam from a He-Ne laser projectile 56 to diffract the ultrafine particles evaporated from the evaporation raw material 4.
5 was detected. In order to monitor the amount of ultrafine particles, as another method, as shown in FIG. 6, the conveying pipe 53 ′ is provided with peep holes 54a ′ and 54b ′, through which the He—Ne laser projectile 56 and the detector are detected. 55 is disposed so as to face each other, a laser beam is emitted from the He—Ne laser projectile 56, and the diffraction of the ultrafine particles in the carrier tube 53 ′ is detected by the detector 55. In this way, the evaporation amount is adjusted by feeding back to the evaporation source according to the value detected by the detector 55. It should be noted that, in FIGS. 5 and 6, parts that are shown and not described are given the same reference numerals in the embodiment and will be described.

[0005]

However, in the above-mentioned monitoring, for ultrafine particles of submicron, especially 100 nm or less, the flow velocity of the ultrafine particles to be measured is too fast to be accurately detected, and an effective method has been desired. . Further, even if feedback is given to the evaporation source after the detection, the output of the electric current to the filament is first adjusted, the temperature of the filament is changed, and then the melting temperature of the evaporation raw material follows. Therefore, since the evaporation amount of the evaporation raw material reaches the desired evaporation rate, a considerably long response time is required, and during that time, the desired amount of ultrafine particles cannot be transferred to the film forming chamber, and the amount of ultrafine particles deposited on the substrate is adjusted. I was in a state where I could not.

The present invention has been made in view of the above problems, and in transporting an aerosol of ultrafine particles generated from an evaporation material to a film forming chamber, it is possible to always deliver a desired amount of ultrafine particles to the film forming chamber. An object is to provide a gas deposition method and apparatus for ultrafine particles.

[0007]

[0008]

[Means for Solving the Problems] The above objects are achieved by heating the evaporation material placed in the ultrafine particle generation chamber,
Ultrafine particles evaporated from the evaporation material are mixed with a carrier gas to form an aerosol, and the aerosol is transferred into a film forming chamber to form a film of the ultrafine particles on a substrate arranged in the film forming chamber. In the gas deposition method of fine particles, the aerosol is introduced from the ultrafine particle generation chamber into a storage chamber for storing the aerosol at a predetermined concentration, and the ultrafine particles are settled downward by gravity in the storage chamber. By utilizing the difference in concentration distribution of the ultrafine particles due to the above, the ultrafine particle deposited film formed on the substrate in the film forming chamber by introducing a certain amount of the aerosol from the storage chamber into the film forming chamber. It is achieved by a gas deposition method for ultrafine particles, which is characterized in that the deposition amount of is controlled.

Further, the above object is to heat the evaporation material placed in the ultrafine particle generation chamber, so that the ultrafine particles evaporated from the evaporation material are mixed with the carrier gas to form an aerosol. In the method of gas deposition of ultrafine particles, wherein the aerosol is conveyed into a film forming chamber and a film of the ultrafine particles is formed on a substrate arranged in the film forming chamber, the aerosol is generated from the ultrafine particle generating chamber. Is introduced into a storage chamber for storing at a predetermined concentration, and in accordance with a pressure drop in the storage chamber, a bottom of a transfer pipe in the storage chamber that transfers aerosol from the storage chamber into the film forming chamber.
By controlling the flow rate of the ultrafine particles from the storage chamber into the film forming chamber by lowering the end portion , the deposition amount of the ultrafine particle deposited film formed on the substrate in the film forming chamber is controlled. This is achieved by a gas deposition method for ultrafine particles.

Further, the above object is provided with a heating device for heating the evaporation material and an introduction pipe for introducing a carrier gas for making the ultrafine particles which are heated by the heating device and evaporated from the evaporation material into an aerosol form. The ultrafine particle generation chamber
A gas deposition apparatus for ultrafine particles , comprising: a film forming chamber in which a substrate on which a film of the ultrafine particles is formed by introducing the aerosol is provided;
A storage chamber for the aerosol is provided between the generation chamber and the film formation chamber, and a first transfer pipe for introducing the aerosol into the storage chamber between the ultrafine particle generation chamber and the storage chamber;
During film formation by disposing the first valve to block the introduction of the aerosol, the second conveying pipe for the aerosol is led into the film formation chamber between the reservoir chamber wherein the film forming chamber And a second valve for controlling the derivation of the aerosol, which is achieved by a gas deposition apparatus for ultrafine particles.

[0011]

Since the aerosol is contained in the storage chamber provided between the ultrafine particle generation chamber and the film formation chamber, the flow rate of the ultrafine particles in the aerosol discharged from the storage chamber to the film formation chamber is appropriately controlled. You can That is , when the aerosol-shaped ultrafine particles settle in the storage chamber due to the action of gravity, the concentration distribution becomes closer to the lower side, and therefore when the aerosol is discharged from the storage chamber into the film forming chamber, the ultrafine particles enter the film forming chamber. Taking into account the proportion of the ultrafine particles in the storage chamber that are reduced and the density of the ultrafine particles in the storage chamber that increases toward the bottom, the lower end of the transfer pipe installed in the storage chamber descends from above to below. By doing so, a certain amount of ultrafine particle aerosol can be led out to the film forming chamber. Furthermore, lowering the pressure in the storage chamber is reduced, the gas flow rate into the film forming chamber from the storage chamber is reduced, with a decrease of the pressure in the storage chamber, the lower end of the carrier tube disposed in the storage compartment By doing so, the aerosol with a high concentration of ultrafine particles is guided to the film formation chamber .
It can be discharged and transported, and the flow rate of ultrafine particles in the aerosol discharged from the storage chamber to the film formation chamber can be controlled. Thereby, a certain amount of aerosol of ultrafine particles can be led out to the film forming chamber.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method and apparatus for depositing ultrafine particles according to a first embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a gas deposition apparatus 40 according to the present invention.
This is composed of an ultrafine particle generation chamber 1, an aerosol storage chamber 2 and a film forming chamber 3 (also referred to as an ultrafine particle deposition chamber). Among these, the ultrafine particle generation chamber 1 and the storage chamber 2 are connected by a transfer pipe 15 having an inner diameter of 4 mm which penetrates each upper wall portion. A stop valve 17 is connected to the transfer pipe 15, and by opening and closing the stop valve 17, the inside of the ultrafine particle generation chamber 1 and the inside of the storage chamber 2 are communicated with each other or airtightly shut off. Also, the storage room 2
The film forming chamber 3 and the film forming chamber 3 are connected to each other by a conveying pipe 18 having an inner diameter of 1.6 mm which is provided so as to penetrate through each upper wall portion.
Similarly, a stop valve 35 is attached to the transfer pipe 18, and by opening and closing the stop valve 35, the inside of the storage chamber 2 and the inside of the film forming chamber 3 are communicated with each other or airtightly closed.

In the ultrafine particle generation chamber 1, the evaporation raw material 4 is accommodated in a basket-shaped filament 5 made of tungsten which is a heater coated with alumina, and both ends of the filament 5 are fixed to the electrodes 6, which are fixed to each other. It is connected to a resistance heating power source 7 arranged outside the ultrafine particle generation chamber 1. A vacuum pump 10 is connected to the left side wall 1a of the ultrafine particle generation chamber 1 as a vacuum exhaust system for exhausting the chamber A through a vacuum pipe 8 with a vacuum valve 9 interposed. As a gas introduction system, a gas cylinder 14 storing He gas is connected to the right side wall 1b of the ultrafine particle generation chamber 1 by a gas introduction pipe with a flow rate control valve 13, a flow meter 12 and a stop valve 11 interposed. There is. In addition, a pressure gauge 16 for measuring the pressure in the room A is provided on the upper wall of the ultrafine particle generation chamber 1.
Is attached.

The size of the storage chamber 2 connected to the ultrafine particle generation chamber 1 and the transfer pipe 15 is a cylindrical container having an inner diameter of 200 mm and a height of 480 mm, and the inner volume is 15 liters. In addition, viewing windows 26 and 27 are provided at substantially central portions of the side walls 2a and 2b of the storage chamber 2, a He-Ne laser projecting body 28 is provided on the left side wall 2a side, and a right side wall 2 is provided.
The b-side is arranged de te compactors 30, these are by interposing a laser beam focusing lens 29 is provided to face on the same optical axis. A vacuum pump 33 for evacuating the room B is connected to the bottom wall of the storage chamber 2 by a vacuum pipe 31 with a vacuum valve 32 interposed. A pressure gauge 34 for measuring the pressure in the room B is attached above the right side wall portion 2b of the storage room 2.

Below the carrier pipe 18 connected to the storage chamber 2.
The end portion 36a is vertically expandable and contractable, and as shown in FIG. 2, the lower end of the end portion 36a is 40 degrees from the bottom surface in the uppermost position.
Set to a height T _{1 of 0} mm. The lower end portion 36a of the carrier pipe 18 is 3 to 30 mm by the carrier pipe lower end moving device 36.
It is possible to move directly below in the speed range of / min.

The film forming chamber 3 connected to the storage chamber 2 by the transfer pipe 18 is connected to the bottom wall by a vacuum pipe 24 with a vacuum pump 24 with a vacuum valve 23 interposed therebetween.
A vacuum gauge 25 for measuring the pressure in the room C is attached to the upper wall portion. A substrate moving carriage 21 is disposed in the film forming chamber 3, a Si substrate 20 is placed on the substrate moving carriage 21, and the substrate 20 is placed on the plane of the substrate moving carriage 21 in XY direction.
It can move in any direction. The nozzle 19 at the tip of the transfer tube 18 disposed in the film forming chamber 3 is made of stainless steel and has an inner diameter of 0.1 mm, and the gap from the tip of the nozzle 19 to the substrate 20 is 1 mm.

The structure of the gas deposition method and apparatus according to the embodiment of the present invention has been described above. Next, the operation thereof will be described.

In this embodiment, Au is used as the evaporation raw material 4.
An explanation will be given using (gold). 18g A for filament 5
u is set, the vacuum valve 9 is opened, and the transfer pipes 15 , 18
After closing the stop valves 17 and 35 provided in the ultrafine particle generating chamber 1,
Evacuate to (0.015 Torr). When the chamber A can be evacuated, the vacuum valve 9 is closed, the stop valve 11 is opened, the flow rate control valve 13 adjusts the flow rate of the carrier gas, and He gas is introduced into the chamber A up to 2 atm. A voltage of 6.8 V is applied to the electrode 6 by the resistance heating power source 7 to heat the tungsten filament 5. The filament 5 has 62 Amp . Current flows. The molten metal surface temperature of Au is 1380 ° C.

On the other hand, the storage chamber 2 opens the vacuum valve 32,
The interior of the room B is set to 1 Pa (7.6 × 10 ⁻³⁾ by the vacuum pump 33.
Evacuate to Torr). When the gas can be exhausted, the vacuum valve 32 is closed. Then, the stop valve 17 is opened, and the ultrafine particle generation chamber 1
Then, 2.5 l / min of He gas is flowed into the ultrafine particle generation chamber 1 from the cylinder 14 while continuously producing ultrafine particles. The internal volume of the storage chamber 2 is 15 as described above.
Since it is liters, the aerosol in which the ultrafine particles of Au and He gas are mixed is conveyed through the conveying pipe 15, and after 12 minutes, the chamber B of the storage chamber 2 rises to 2 atm. Stop valve 17 when the room B of the storage room 2 reaches 2 atm
Close.

The concentration of the Au ultrafine particles filled in the chamber B of the storage chamber 2 is detected by the detector 30 by diffraction by the He-Ne laser 28 through the viewing window. In the film forming chamber 3, the chamber C is evacuated by the vacuum pump 24, and when the stop valve 35 is opened, the aerosol is sucked into the transport pipe 18 and transported from the chamber B to the chamber C. In the room C , the aerosol is jetted at high speed from the nozzle 19 at the tip of the carrier pipe 18 to the Si substrate 20 to form a deposited film of Au ultrafine particles. At this time, the gas carrying amount was 1 Torr · liter / sec, and the pressure in the chamber B of the aerosol storage chamber 2 was 2.0 at.
The time required to decrease from m to 1.8 atm by 10% is 38 minutes.

In the aerosol storage chamber 2, Au is placed in the height direction.
There is a concentration distribution of ultrafine particles, and as time passes, the concentration of Au ultrafine particles becomes higher in the lower part than in the upper part in the room B due to the action of gravity. Further, when Au ultrafine particles are transported from the chamber B of the storage chamber 2 to the chamber C of the film forming chamber 3, the transport flow rate of the ultrafine particles in the aerosol decreases with the passage of time, and the amount of Au ultrafine particles in the chamber B is reduced. The concentration becomes smaller. The rate at which the transport flow rate of the Au ultrafine particles in the aerosol decreases with the passage of time in the room B,
In consideration of the ratio in which the concentration of the Au ultrafine particles increases toward the lower side of the carrier tube 18,
When the lower end portion 36a is moved downward, Au ultrafine particles having a constant concentration are sucked into the lower end portion 36a of the transfer pipe 18 and are transferred to the film forming chamber 3.

Therefore, as shown in FIG. 2, the lower end portion 36a of the carrier pipe 18 is moved by the carrier pipe lower end moving mechanism 36 as the aerosol is used (the pressure in the chamber B of the aerosol storage chamber 2 decreases). Move it directly below. lower end
The moving distance of the portion 36a is usually 300 mm, and the time required to move this distance is 38 minutes. That is, the lowering speed of the lower end portion 36a is 7.9 mm / min.

As a result, during the deposition of the Au ultrafine particles, the Si substrate 20 is moved at a speed of 3 mm / min, and the Si substrate 2 is moved.
A fine ultrathin wire film was formed on Au. The deposition time was 38 minutes as described above, and when the cross-sectional shape of the thin linear thick film was measured, the film thickness was 6.5 μm in the initial stage and 6.7 μm in the middle.
m, 6.3 μm before the end of deposition, and the line width is 1
It was 00 μm. From this measurement result, the transport amount of the Au ultrafine particles from the chamber B of the aerosol storage chamber 2 to the chamber C of the film formation chamber 3 is within ± 3%, and the target deposition amount of Au ultrafine particles is maintained over a predetermined deposition time. A fluctuation of ± 5% is shown, which is practically usable.

As described above, in this embodiment, the decrease in the transport amount of the ultrafine particles to the film forming chamber 3 due to the decrease in the pressure in the aerosol storage chamber is caused by the decrease in the pressure in the aerosol storage chamber. The concentration of the ultrafine particles is increased as the ultrafine particles in the downward direction are compensated for, and the amount of the ultrafine particles deposited on the substrate 20 is kept substantially constant. Further, in the present embodiment, unlike the conventional method, the measurement of ultrafine particles by the He-Ne laser projectile 28 and the detector 30 can be performed, and the concentration of the ultrafine particles can be measured in a substantially stationary state. However, the density error can be greatly reduced. Furthermore, in the chamber B of the storage chamber 2, since the ultrafine particles in the form of aerosol and floating in the gas have different sedimentation degrees due to the difference in particle size (weight), a kind of separation effect appears when left for a predetermined time.
Therefore, depending on the height position of the lower end portion 36a of the transport pipe 18,
The size of ultrafine particles to be conveyed is uniform. still,
The lowering speed of the lower end portion 36a of the transport pipe 18 may be lowered by measuring the concentration in the chamber B of the storage chamber 2, or may be lowered according to the pressure value of the pressure gauge 34.

As described above, in the present embodiment, the gas deposition method simplifies the factors that affect the amount of ultrafine particles deposited, and controls these factors to match the amount of ultrafine particles deposited with the target and The fluctuation is reduced. Therefore, the time required for feedback does not matter. As a result, it has become possible to perform the control of the deposition amount of ultrafine particles, which has been troublesome in the prior art and has a problem in the determination accuracy, by a simple method.

In the present embodiment, the pressure in the chamber B of the storage chamber 2 is set to 2 atm, and the lower end portion 36a of the substrate 20 and the transfer pipe 18 is set.
I also explained the falling speed of
These numerical values are not limited to this, and for example, the ultrafine particle generation chamber 1
If the carrier gas in the chamber A is 4 atm, the pressure in the chamber B in the storage chamber 2 can be 4 atm. In this case, the usage time is 76 minutes after the aerosol is introduced into the chamber C in the film forming chamber 3. Which is twice as large as the above-mentioned embodiment.

Next, a method and apparatus for gas deposition of ultrafine particles according to the second embodiment of the present invention will be described with reference to FIG. The same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

In the first embodiment, there is only one aerosol storage chamber, but in the second embodiment, two storage chambers 2 and 2'are provided as shown in FIG. That is, the ultrafine particle generating chamber 1 and the storage chambers 2 and 2'are respectively shut off valves 17 and 17 '.
Are connected by a transfer pipe 15 'that is bifurcated. Also, the storage chambers 2 and 2'and the film formation chamber 3
Are connected by a transfer pipe 41 which is bifurcated, with stop valves 35 and 35 'interposed therebetween. Further, the storage chambers 2 and 2'include the stop valve 38, and the line 3
Connected by 7.

In this embodiment, when the stop valve 38 is closed and used, the storage chambers 2 and 2'are arranged in parallel.
In this case, aerosol is generated by the same method as described in the first embodiment, and only the aerosol filled in the storage chamber 2 side is led out to the film forming chamber 3, and the storage chamber 2'side discharges the aerosol between them. Let it fill. Next, when the amount of aerosol on the side of the storage chamber 2 decreases, the aerosol on the side of the storage chamber 2'is led out to the film forming chamber 3, and the side of the storage chamber 2 is filled with the aerosol. By repeating this method alternately, ultrafine particles having a constant concentration can be continuously led to the film forming chamber 3. In addition, when the storage chambers 2 and 2 ′ are simultaneously filled with aerosol, the stop valves 17 and 35 are closed, and the stop valves 2 ′, 17 ′ and 35 ′ are opened, the storage chambers 2 and 2 ′ are connected in series. Therefore, the operating time is twice as long as when one storage room is provided. Regarding other effects, it is clear that the same effects as those of the first embodiment are achieved.

Next, a method and apparatus for depositing ultrafine particles according to a third embodiment of the present invention will be described with reference to FIG. The same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

As shown in the figure, in this embodiment, an ultrafine particle generation chamber and a storage chamber are provided in two series, which are connected to the film forming chamber 3. The first and second series are the first embodiment. Similarly, the ultrafine particle generation chambers 1 and 1 ′ and the storage chambers 2 and 2 ′ are connected by vacuum pipes 17 and 17 ′ with stop valves 17 and 17 ′ interposed. Further, between the film forming chamber 3 and the storage chambers 2 and 2 ', as shown by a chain line D, flow control valves 43 and 43', flow meters 44 and 44 ', and a stop valve 4 are provided in respective systems.
Immediately before the film forming chamber 3, the aerosols generated in the respective series are connected so that the aerosols 5 and 45 'are mixed with each other.

The present embodiment is constructed as described above. However, in the third embodiment, unlike the first and second embodiments in which one kind of ultrafine particles is deposited on the substrate, two kinds of It is applied when a deposited film in which ultrafine particles are mixed is formed on the substrate 20. That is, the ultrafine particle generation chamber 1 of the first series
And different types of evaporation raw materials are accommodated in the second series of ultrafine particle generation chambers 1 ′ and evaporated. In this case, the flow control valve 4
3, 43 'are used when adjusting the composition ratio of these evaporation raw materials. Regarding other effects, it is clear that the same effects as those of the first embodiment are achieved.

Although the respective embodiments of the present invention have been described above, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention.

For example, in each of the above embodiments, the He-Ne laser projectile 28 and the detector 30 were provided at one location to measure the concentration of ultrafine particles. However, two or more locations were provided above the storage chamber 2. You may arrange | position below and may perform the measurement of an ultrafine particle closely.

Further, in the above embodiment, the numerical values were applied to the size of the storage chamber 2 and the speed of the lowering speed of the lower end portion 36a of the transfer pipe 18, but the present invention is not limited to this, and the volume of the storage chamber 2 is not limited to this. If the shape is made slender in the vertical direction with a constant value, the separation effect of the ultrafine particles as described above can be widened in the vertical direction, and a more uniform deposited film of ultrafine particles can be created, and the deposited film of ultrafine particles can be made uniform. If it is not necessary to make the shape of the storage chamber 2 smaller in the vertical direction, the width of the separation effect of ultrafine particles becomes narrower, and a deposited film of ultrafine particles in which large particles and small particles are relatively mixed is formed on the substrate. To be done. In this regard, various deposition films are formed on the substrate by further increasing or decreasing the standing time.

[0037]

As described above, according to the method and apparatus for depositing gas of ultrafine particles of the present invention, a certain amount of ultrafine particles are conveyed to the film forming chamber by a simple method, and the substrate has a uniform thickness. It is possible to form a uniform deposited film of ultrafine particles.

[Brief description of drawings]

FIG. 1 is a schematic view of a method and apparatus for gas deposition of ultrafine particles according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a storage chamber of the device.

FIG. 3 is a schematic diagram of a gas deposition method and apparatus for ultrafine particles according to the second embodiment.

FIG. 4 is a schematic view of a method and apparatus for gas deposition of ultrafine particles according to the third embodiment.

FIG. 5 is a schematic view of a gas deposition method and apparatus for ultrafine particles according to a conventional example.

FIG. 6 is a schematic view of a gas deposition method and apparatus for ultrafine particles according to another conventional example.

[Explanation of reference numerals] 1 ultrafine particle generation chamber 2 storage chamber 3 film forming chamber 4 evaporation material 5 filament 6 electrode 7 resistance heating power supply 15 transfer pipe 17 stop valve 18 transfer pipe 20 substrate 35 stop valve 36 transfer pipe lower end moving device 36a lower end Part 40 gas deposition equipment

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Claims (5)

(57) [Claims] 1. When the evaporation material placed in the ultrafine particle generation chamber is heated, the ultrafine particles evaporated from the evaporation material are mixed with a carrier gas to form an aerosol, and the aerosol is conveyed to the film forming chamber. In the method of gas deposition of ultrafine particles for forming a film of the ultrafine particles on a substrate arranged in the film forming chamber, in order to store the aerosol from the ultrafine particle generating chamber at a predetermined concentration. A certain amount of the aerosol is introduced from the storage chamber into the film forming chamber by utilizing the difference in concentration distribution of the ultrafine particles introduced into the storage chamber and the ultrafine particles being settled downward due to gravity in the storage chamber. introducing, Gasudepoji ultrafine particles, characterized in that so as to control the deposition amount of the nanoparticle deposited film <br/> created on the substrate in the film forming chamber ® down method. 2. When the evaporation material placed in the ultrafine particle generation chamber is heated, the ultrafine particles evaporated from the evaporation material are mixed with a carrier gas to form an aerosol, and the aerosol is conveyed into the film forming chamber. In the method of gas deposition of ultrafine particles for forming a film of the ultrafine particles on a substrate arranged in the film forming chamber, in order to store the aerosol from the ultrafine particle generating chamber at a predetermined concentration. Introduced into the storage chamber, in response to the pressure drop in the storage chamber, by lowering the lower end of the transport pipe in the storage chamber that transports the aerosol from the storage chamber into the film forming chamber, from the storage chamber The deposition amount of the ultrafine particle deposition film formed on the substrate in the film forming chamber is controlled by controlling the flow rate of the ultrafine particles into the film forming chamber. Method for gas deposition of ultrafine particles. 3. Ultrafine particles provided with a heating device for heating the evaporation material and an introduction pipe for introducing a carrier gas for making the ultrafine particles heated by the heating device and evaporated from the evaporation material into an aerosol form. In a gas deposition apparatus for ultrafine particles , comprising: a production chamber; and a film formation chamber in which a substrate on which a film of the ultrafine particles is formed by introducing the aerosol is provided, the ultrafine particle production chamber and the film. form
The storage chamber of the aerosol between the Narushitsu provided, said storage the aerosol between the ultrafine particles producing chamber and the reservoir chamber
The first transfer pipe for introducing into the chamber and the air during film formation.
Disposed a first valve for interrupting the introduction of Rozoru, guiding of the second transfer pipe and the aerosol order to derive the aerosol into the film formation chamber between the reservoir chamber wherein the film forming chamber
A gas deposition apparatus for ultrafine particles, characterized in that a second valve for controlling the discharge is provided. 4. The second device arranged in the storage chamber.
4. The lower end of the carrier pipe of claim 1 is vertically movable.
The ultra-fine particle gas deposition apparatus according to item 1. 5. At least one of the ultrafine particle concentration detection means and the storage chamber pressure detection means is provided in the storage chamber.
5. The gas deposition apparatus for ultrafine particles according to claim 3, wherein either one of them is provided .