JP3403986B2 - Image sensor and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor applicable to facsimiles, image scanners, digital copying machines and the like.

[0002]

2. Description of the Related Art In recent years, along with the spread of facsimiles,
There is a demand for downsizing, weight reduction, and price reduction of image sensors. Image sensors used in facsimiles, image scanners, digital copying machines, etc. are roughly classified into three types: non-contact type, contact type, and perfect contact type.

At present, the non-contact type using a CCD projects an original onto a CCD through a reduction lens system, which is disadvantageous in size and weight reduction compared to the other two methods.
It is advantageous in terms of price because it can be produced by the currently established LSI process using a silicon wafer and the CCD chip can be small.

On the other hand, the contact type and the complete contact type are more advantageous than the non-contact type in terms of size and weight reduction, but the production cost is high due to the difficulty of the manufacturing process, mounting and assembly, and the SELFOC lens array. The use of high-priced components such as glass and thin glass is a major factor that prevents the price reduction of these two types of image sensors.

Specifically, the contact type image sensor for a facsimile is mainly a multi-chip type in which a large number of MOS LSI chips are mounted and a thin-film type in which an amorphous silicon thin film or the like is used as an optical sensor portion and formed on an insulating substrate. Has been converted.

These use a SELFOC lens array (an optical lens that guides the reflected light from the original to the light receiving sensor surface). Further, since the multi-chip type is manufactured by the LSI technology which is the most advanced technology of the present day, the yield is considerably high and stable supply is possible. On the other hand, the thin-film type has a low yield in the thin-film semiconductor layer portion, resulting in high production cost.

[0007]

The complete contact type image sensor using a thin film element is most advantageous in terms of downsizing and weight saving since it does not use a reduction lens system or a SELFOC lens array, but as described above. Since the yield of the thin film semiconductor layer is poor, it is one of the major factors that hinder the cost reduction, and it has been desired to provide a thin film semiconductor portion that is stable and has a good yield. Further, as described above, the contact type image sensor also has the same problem when the photoelectric conversion element portion is a thin film element.

Photoelectric conversion elements of image sensors are generally known to be of the photoconductor type and the photodiode type.
It has been put to practical use. In general, the photoconductor type is capable of passing a large current and is thus resistant to noise, but on the other hand, it has a poor optical response and is disadvantageous to the demand for higher speed facsimiles. On the other hand, the photodiode type has a small current flowing but has a fast response to light, and is expected to become the mainstream in the future.

FIG. 2 shows a top view and a schematic sectional view of only the photoelectric conversion element portion of the conventional photodiode type image sensor.
(A) and (B). In the figure, an insulating film (silicon oxide film) 21 that blocks alkali metal ions such as sodium is provided on a substrate 20. A first electrode 22 having a window 26 for light incidence opened on the insulating film 21.
Is provided. A thin film semiconductor 23 of amorphous silicon is formed on the first electrode 22, and the thin film semiconductor is a PIN type diode. Further, a translucent electrode 24 is provided in the photoelectric conversion element region 27 on the thin film semiconductor 23, and a metal electrode 25 is formed so as to be connected to the translucent electrode 24.

Usually, since the thin film semiconductor has high conductivity when exposed to light, most of the thin film semiconductor is shielded by the first electrode 22. Therefore, the first electrode 22 is also provided in a portion other than the photoelectric conversion element.

This thin-film semiconductor has a thickness of 1 μm or less, and since the film is made by volume by means such as a vapor phase method, the first electrode 22 and the second electrode 24, due to mixing of dust and impurities, There is a high probability that a short circuit or a leak will occur in the portion between 25 and 28, for example, and it will not function as a photoelectric conversion element.

Furthermore, when an image sensor is prepared by arranging photoelectric conversion elements as shown in FIG. 2 one-dimensionally as shown in FIG. 3 (A), one photoelectric conversion element 38 and the photoelectric conversion element 39 adjacent thereto are provided. The metal of the second electrode remains in the vicinity of the end portion 37 of the thin film semiconductor existing between the two, and short-circuits the photoelectric conversion elements.

That is, when such an image sensor is produced, acid treatment may be performed in the process after the semiconductor layer is formed. Since hydrofluoric acid is used as the acid used for this treatment (for example, as a pretreatment for connecting the metal electrode to the impurity region of the TFT on the same substrate),
The silicon oxide film 31 is etched near the end portion 37 of the thin film semiconductor layer to form a concave portion. After that, a metal layer is formed on the front surface to form the metal electrode 35, and then this metal layer is subjected to a patterning process. However, the metal 36 remains in this concave portion, and the photoelectric conversion elements 38 and 39 are short-circuited or leak. Was there.

As described above, a large number of electrical shorts and leaks occur inside or between the photoelectric conversion elements, which deteriorates the manufacturing yield of photoelectric conversion devices and image sensors.

Furthermore, in the manufacturing process, the transparent conductive films 24 and 34 are reduced in film thickness due to the required resist stripping solution or etching solution for the metal thin film wiring, and defects such as coloring occur, further lowering the manufacturing yield. It was

[0016]

The present invention achieves a high production yield by solving the above-mentioned problems, and realizes a low cost of the production of a contact type or a perfect contact type image sensor using a thin film. The purpose is to achieve high reading resolution.

That is, a photoelectric conversion device having a first electrode mainly made of a metal material on a translucent insulating substrate or an insulating film, a thin film semiconductor layer for photoelectric conversion, and a second electrode on the thin film semiconductor layer. And a thin film having an insulating property is formed between at least a part of the second electrode and the thin film semiconductor layer forming the photoelectric conversion portion, or between the thin film semiconductor layer and the first electrode. It is a photoelectric conversion device. When a plurality of the photoelectric conversion devices are arranged one-dimensionally or two-dimensionally to form an image sensor, not only in the photoelectric conversion area portion but also in the area between them, that is, between the sensor bits. The feature is that this insulating thin film is extended.

FIG. 1 is a schematic view showing the situation.
FIG. 2A is a plan view of an image sensor in which the photoelectric conversion devices of the present invention are arranged in a line, FIG. 2B is a schematic sectional view of the photoelectric conversion device, and FIG. A schematic sectional view of a region is shown.

In FIG. 1, an insulating thin film 5 is formed between the metal electrode 7 of the second electrode and the thin film semiconductor 4. This thin film is shown in Figure 1.
As in (C), it exists on the thin film semiconductor 4 even between the sensor bits between the photoelectric conversion element regions.

Furthermore, in this figure, the transparent electrode 6 on the light incident surface of the photoelectric conversion device is also formed so as to be covered.

As described above, between the second electrode and the semiconductor thin film forming the photoelectric conversion element, or between the semiconductor thin film and the first semiconductor thin film.
By forming a thin film having an insulating property on at least one required portion between the electrodes, it is possible to significantly reduce defects such as leak current between the thin film electrodes due to pinholes or the like generated in the semiconductor thin film layer and short circuits. did it.

Furthermore, by covering the pattern end portions of the semiconductor thin film existing between the sensor bits with the above-mentioned insulating thin film, the electrode material is not left in the vicinity of the step of the pattern, so that the leak current between the sensor bits is increased. Was significantly reduced, and at the same time, the leakage current between the second electrode and the first electrode was also reduced. Since the leak current flowing through the semiconductor layer between the adjacent second electrodes is reduced, the reading resolution of the image sensor is improved.

In addition, since the thin film 5 having an insulating property is also provided in the portion 10 (near the end portion of the thin film semiconductor 4) of FIG. 1B, the portion between the metal electrode 7 and the first electrode 3 is formed in this portion. It is possible to prevent the occurrence of leakage current in the.

Further, when the insulating thin film is formed not only between the semiconductor layer and the electrode but so as to cover the transparent electrode on the light irradiation surface of the photoelectric conversion region, the transparent conductive film is formed. By covering with the insulating film for protection, the resist stripping solution used in the subsequent step and the film loss of the transparent conductive film due to the etching solution of the electrode material, defects such as coloring and corrosion did not occur at all.

[0025]

EXAMPLES Example 1 In this example, the photoelectric conversion element portion of the perfect contact image sensor is formed on a transparent insulating substrate 1 such as glass or quartz.

4 to 10 show schematic steps in that case, and FIG. 11 shows a schematic plan view of the contact type image sensor of this embodiment after formation.

A silicon oxide film 2 for preventing diffusion of alkali impurities from the substrate is formed on a glass substrate 1 using an organic silica solution to a thickness of 2000 Å. On the silicon oxide film, a metal 3 having a sufficiently slow etching rate with respect to an etchant such as silicon or silicon oxide, for example, chromium is formed by a sputtering method to a thickness of 1000 to 2000 Å, and then the first electrode 3 also serving as a light shielding layer is formed by a photolithography process. Pattern. This state is shown in FIG. This electrode is provided with a light introduction window 8 corresponding to each one bit of the sensor, and the other first electrode has a function as a light shielding film.

Next, the semiconductor layer 4 is formed as shown in FIG.
This is a film in which N-layer amorphous silicon carbide doped with phosphorus, I-layer amorphous silicon not doped with impurities, and P-layer amorphous silicon carbide doped with boron are formed by a known plasma CVD method. The film thickness may be determined so that the required electrical characteristics such as the capacitance between the second electrode and the first electrode and the diode characteristics of the photodiode are optimized, and the P and N layers are 100 to 600 Å and I, respectively. A suitable layer thickness is 3000 Å to 1.2 μm.

Next, ITO6, which is a transparent conductive film, is formed on this.
Was formed into a film having a thickness of 700 to 2000 Å and patterned into a predetermined dimensional pattern of the photoelectric conversion element, and the semiconductor layer formed earlier was dry-etched to obtain the state shown in FIG.

Next, an insulating thin film such as S is formed on the upper surface of these.
Liquid silica used as OG (spin-on-glass) is applied by a spin-on method or the like, and annealed at a temperature that has little influence on the characteristics of the semiconductor layer 4, for example, about 200 to 300 ° C. to remove the solvent to form a film. Then, the insulating film 5 is formed. This film thickness corresponds to the metal electrode 7 of the second electrode and the first electrode 3
It may be determined in consideration of the capacity between the two. The film thickness can be arbitrarily changed from about 300 Å to about 1.6 μm by adjusting conditions such as the dilution ratio of liquid silica, the number of rotations during spin coating, and time. Further, this insulating film is not limited to the method of forming by applying liquid silica, but sputtering, plasma CVD, photo CVD, atmospheric pressure C
An insulating material such as SiO ₂ , Si ₃ N ₄ or SiON may be formed into a film by a method such as VD, and the same effect was obtained. However, when the insulating film is left on the window for reading the document, however, a material that does not absorb the reading light or interferes with the light transmission is not used.
Therefore, this material is appropriately changed depending on the type of reading light.

FIG. 8 shows the insulating film 5 formed as described above.
Is etched by photolithography, and IT
The step of forming a contact hole 9 for contacting O6 and the metal electrode 7 is shown.

Next, as shown in FIG. 9, for example, Al is formed as a metal electrode 7 by a sputtering method and is patterned by photolithography to complete the thin film process of the sensor portion of the contact image sensor of this embodiment. After patterning of aluminum, the edge of the semiconductor layer 4 was observed under magnification using a microscope or a SEM, but aluminum was not present after patterning and sufficient insulation was secured between the bit sensors. It had been. In addition, the insulating film 5 is formed by covering the end portion 10 of the thin film semiconductor 4.
Since it is provided, the leak in this portion between the first electrode 3 and the second electrode 7 can be suppressed.

Thereafter, a thin glass sheet 70 having a thickness of 50 to 100 μm is attached with an adhesive 80 to complete the image sensor. As shown in FIG. 10, the protective film 50 made of polyimide or the like may be formed before the thin glass plate 70 is attached.

As shown in FIGS. 4 to 10 and 11, according to the present invention, it is possible to prevent a short circuit and a leak between the electrodes sandwiching the thin film semiconductor, and further to prevent a short circuit between the second electrodes between the sensor bits. We were able to realize a good image sensor with no leakage and no defective bits with a high yield.

In addition, since the insulating film is provided so as to cover the transparent electrode on the photoelectric conversion region, the transparent electrode is reduced in thickness, corroded,
It is free from defects such as discoloration, has a high production yield, and is extremely advantageous in reducing costs.

[Embodiment 2] In this embodiment, the photoelectric conversion element of the perfect contact type image sensor and the driving thin film transistor are formed on the same substrate.

12 to 22 are vertical sectional views showing a manufacturing process of a complementary thin film transistor mounted on a substrate of an image sensor similar to that of [Example 1] and a manufacturing process of a photoelectric conversion element part which is subsequently manufactured. Is.
In FIG. 12, a silicon semiconductor film 101 is formed on an insulating substrate 1 by 30
It shows a state in which the film is formed to a thickness of 0 to 3000 Å by a known low pressure CVD method, is subjected to thermal annealing, and the crystallized film is patterned into an island shape by photolithography. The conditions for forming the film by the low pressure CVD method were the usual conditions, but using disilane as a reaction gas,
A film was formed at a substrate temperature of 500 ° C.

Further, a gate silicon oxide film 102 was formed by sputtering to a thickness of 500 to 2000 Å. At this time, 100% oxygen is used as the sputtering reaction gas.
Alternatively, when the gate insulating film was formed using a mixed gas of argon and oxygen (oxygen concentration of 80% or more), a gate insulating film having very good interface characteristics could be realized.

Next, an amorphous silicon film 103 heavily doped with phosphorus is formed in a thickness of 1000Å to 3000Å, and then patterned as shown in FIG. 13 to form the gate electrode 103.
It was created.

FIG. 14 shows a process in which boron is ion-implanted into the entire surface in the state of FIG. 13 with a dose amount of about 5 × 10 ^{14 to} 3 × 10 ¹⁵ atoms / cm ² . Thereby, the source / drain regions 120 and 122 of the P-channel TFT are formed. Next, in order to form the source / drain regions 130 and 132 of the N-channel TFT, a mask for ion implantation such as the resist film 104 is formed to cover the PTFT region, and phosphorus is added to the portion to be NMOS to form PTFT. Ion implantation is performed at a dose amount that is 2 to 10 times that of boron that was just implanted (FIG. 15).

Thereafter, the impurities injected as described above are removed by 50
It was activated at a temperature of 0 ° C. or higher, and hydrogenated to improve the characteristics of the thin film transistor. This hydrogenation treatment is effective for both the hydrogen plasma annealing treatment method in which hydrogen atoms are created by plasma in the vacuum chamber and the thin film transistor is exposed therein, or the method for diffusing hydrogen by heat of 200 ° C to 500 ° C. Was given.

FIG. 16 shows a step of forming silicon oxide as the interlayer insulating film 105 at a thickness of 5000 Å to 1.5 μm. As the interlayer insulating film 105, silicon oxide, PSG film, BP
An SG film or the like is suitable, and these are formed by using, for example, a normal pressure CVD method, a low pressure CVD method, a sputtering method, or the like. Alternatively, a structure in which 500 to 2000 liters of silicon oxide is formed by a sputtering method or an optical CVD method and a large number of insulating films are stacked thereover using liquid silica may be used.

Next, FIGS. 17 to 21 show the steps for producing a photoelectric conversion layer in the same manner as in [Example 1]. A photoelectric conversion region is formed on this interlayer insulating film 105.

On this silicon oxide film, a metal 3 having a sufficiently slow etching rate with respect to an etchant such as silicon or silicon oxide, for example, chromium, is formed by a sputtering method at a thickness of 1000.
After depositing up to 2000 Å, the first electrode 3 which also serves as a light shielding layer is patterned by a photolithography process. This state is shown in (F). This electrode has a sensor 1
A light introduction window 8 corresponding to each bit is provided, and the first electrode in the other portions has a function as a light shielding film.

Next, the semiconductor layer 4 is formed. This is an N-type silicon carbide semiconductor doped with phosphorus, not doped with impurities I
Type silicon semiconductor and P-type silicon carbide semiconductor doped with boron are formed by a known plasma CVD method. The film thickness may be determined so that the required electrical characteristics, for example, the capacitance between the second electrode and the first electrode and the characteristics of the diode of the photodiode are optimized.
600 Å, I layer 3000 Å ~ 1.2 μm is suitable. Then, ITO 6 which is a transparent conductive film is formed on the surface of the ITO film 70
A film having a thickness of 0 to 2000 Å was formed, patterned into a predetermined size pattern of the photoelectric conversion element, and the semiconductor layer formed earlier was dry-etched to obtain the state shown in FIG.

Next, as an insulating thin film on these upper surfaces,
A silicon nitride film 140 is formed to a thickness of 750Å in the photoelectric conversion region and the TFT region by the photo-CVD method. This silicon nitride film has a function similar to that of the first embodiment, and at the same time, acts as a protective film of the TFT region and reaches the TFT region such as impurities (for example, metal or alkali metal) that affect the electrical characteristics of the TFT. It has the function of blocking the intrusion of the ITO, which helps to improve the reliability of the image sensor, and at the same time ITO
6 also has a function as a protective film of ITO. In this embodiment, a silicon nitride film is used as this protective film. In this case, however, a clean contact hole may not be formed due to a large difference in etching rate from the underlying interlayer insulating film. Therefore, it is possible to form a clean contact hole by making the etching temperature uniform by taking measures such as slightly increasing the formation temperature of the interlayer insulating film or increasing the formation speed of the silicon nitride film.

FIG. 20 shows a step of forming a contact hole for contacting the thin film transistor and the wiring thin film second electrode. At this time, the mask is designed so that the ITO 6 and the wiring thin film second electrode and the contact hole for contacting the wiring thin film second electrode and the thin film first electrode are simultaneously formed. There is no increase in the number of photomasks due to the formation. The process of etching the insulating film 140 formed as described above by photolithography to form the contact hole 9 for contacting the ITO 6 and the metal electrode 7 is shown. At the same time, contact holes 160 are similarly formed in each of the impurity regions of the TFT for forming electrodes in the source and drain regions of the TFT.

Next, in order to improve the electrical connection with the impurity region, acid treatment is performed at 1/100 HF to remove the natural oxide formed on the surface.
In the present invention, since the insulating film 140 is provided, no recess is formed at the end of the semiconductor film 4 even after this acid treatment.

Next, as shown in FIG. 21, for example, Al is formed as a metal electrode 7 by a sputtering method and is patterned by photolithography to complete the thin film process of the sensor portion of the contact image sensor of this embodiment.

Thereafter, a thin glass plate 111 having a thickness of 50 to 100 μm is attached with an adhesive 110 to complete the image sensor. As shown in FIG. 22, the protective film 109 made of polyimide or the like may be formed before the thin glass plate 111 is attached.

The image sensor manufactured in this manner has a high production yield, and since the driving circuit by the TFT is already formed on the substrate, the contact type image sensor can be manufactured at an extremely low cost.

[0052]

EFFECT OF THE INVENTION A semiconductor is formed by forming an insulating film on at least one of a thin film second electrode and a semiconductor thin film, or a semiconductor thin film and a thin film first electrode, which form a photoelectric conversion element. It has become possible to reduce the leakage current between the thin film electrodes due to pinholes, etc. generated in the thin film layer, and to substantially reduce defects such as short circuits.

By connecting the photoelectric conversion element to a circuit composed of thin film transistors formed on the same substrate, a low-cost image sensor with few external circuits could be manufactured with high yield.

By covering the end portions of the pattern of the semiconductor thin film with the insulating film, no electrode material is left on the step of the pattern, so that the leak current between the sensor bits is 1.
It was significantly reduced from the 0 ^-6 A range to the 10 ^-11 A range, and the leakage current between the first electrode and the second electrode near the edge of the thin film semiconductor was also reduced.

Furthermore, since the transparent conductive film is covered with the insulating film, defects such as film reduction, coloring and corrosion due to the resist stripping solution and the etching solution of the electrode material are not caused in principle, so that the process margin is increased. However, the production yield has improved.

In addition, since the insulating film formed on the TFT region has a function as a blocking layer for impurities to the TFT region, the reliability is improved.

[Brief description of drawings]

1 shows a schematic cross-section of a structure according to an embodiment of the invention.

FIG. 2 is a schematic view showing a state of a conventional device.

FIG. 3 is a schematic view showing a state of a conventional device.

FIG. 4 is a schematic cross-sectional view showing a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 6 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 7 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 8 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 9 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view showing a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 11 shows a schematic plan view of a structure according to an embodiment of the invention.

FIG. 12 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view showing a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view showing a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 15 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 16 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 17 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 18 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 19 is a schematic cross-sectional view showing a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 20 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 21 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

FIG. 22 shows a schematic cross-sectional view of a manufacturing process of an image sensor having a structure according to an embodiment of the present invention.

[Explanation of symbols]

1 ─── Substrate 3 ─── 1st electrode 4 ─── Semiconductor layer 5 ─── Insulation film 6 ─── Transparent electrode (second electrode) 7 ─── Metal electrode (second electrode) 50 --- Protective film 60 ─── Adhesive 70 ─── Thin glass 101 ─── Silicon semiconductor 102 ─── Gate oxide film 103 --- Gate electrode 104 ─── Resist (mask) 105 ─── Interlayer insulation film

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 29/786 H01L 21/316 H01L 27/146 H01L 31/10 H04N 1/028

Claims (9)

(57) [Claims] 1. A semiconductor having a light-shielding first electrode having a plurality of light introduction windows on a light-transmitting insulating surface, and a plurality of openings formed on the first electrode and overlapping with the light introduction window. A plurality of conductive layers formed on the semiconductor layer and corresponding to the light introduction windows different from each other, the conductive layers being made of a transparent conductive material, and a contact hole on each of the plurality of conductive layers. A top surface of the semiconductor layer and top surfaces of the plurality of conductive layers;
An insulating film that is in contact with and covers the first electrode, the semiconductor layer, and the plurality of conductive layers; and a plurality of second conductive films that are formed on the insulating film and that are in contact with different conductive layers in the contact holes.
And a plurality of second electrodes, each of which extends from a region where the conductive layer is not provided on the semiconductor layer to a region where the semiconductor layer is not provided. An image sensor characterized by being provided as follows. 2. The image sensor according to claim 1 , wherein the transparent conductive material is ITO. 3. The image sensor according to claim 1 , wherein the semiconductor layer is a semiconductor layer formed by stacking a P layer, an I layer and an N layer. 4. A facsimile using the image sensor according to any one of claims 1 to 3 . 5. An image scanner using the image sensor according to any one of claims 1 to 3 . 6. A digital copying machine using the image sensor according to any one of claims 1 to 3 . 7. A light-shielding first electrode having a plurality of light introduction windows is formed on a light-transmitting insulating surface, and a plurality of openings overlapping the light introduction window are formed on the first electrode. A semiconductor layer is formed, and a plurality of conductive layers made of transparent conductive material, which are arranged corresponding to the light introduction windows different from each other, are formed on the semiconductor layer, and an upper surface of the semiconductor layer and the plurality of conductive layers. Contact with the upper surface of
And forming an insulating film covering the first electrode, the semiconductor layer and the plurality of conductive layers, forming contact holes in regions of the insulating film located on the conductive layer, respectively. A method of manufacturing an image sensor, comprising: forming a plurality of second electrodes in contact with the different conductive layers in the contact holes, wherein the plurality of second electrodes are each formed on the semiconductor layer. A method of manufacturing an image sensor, wherein the image sensor is formed so as to extend through a region where the conductive layer is not provided to a region where the semiconductor layer is not provided. 8. The method of manufacturing an image sensor according to claim 7 , wherein ITO is used as the transparent conductive material. 9. The method of manufacturing an image sensor according to claim 7 , wherein the semiconductor layer is formed by stacking a P layer, an I layer and an N layer.