JP3363812B2 - Semiconductor device, wire bonding method for the semiconductor device, and wire bonder - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having leads arranged in two stages, a wire bonding method for the semiconductor device, and a wire bonder.

[0002]

2. Description of the Related Art FIG. 2 is a perspective view showing an example of a conventional semiconductor device. This semiconductor device is a general one, and includes a semiconductor chip 1, leads 2 for external connection arranged around the semiconductor chip 1, and a sealing member 3 made of resin or the like. Before the semiconductor chip 1 is sealed with the sealing member 3, the electrode pads 1 a exposed and arranged on the upper part of the semiconductor chip 1 are connected to the leads 2. For this connection, for example, a gold wire 4 which is a bonding wire is used.

FIGS. 3A and 3B are views showing another example of a conventional semiconductor device. FIG. 3A is a perspective view of the whole,
And FIG. 2B is a partially enlarged perspective view of FIG.
Although this semiconductor device has a semiconductor chip 5, the number of leads connected to the electrode pads 5a arranged on the surface of the semiconductor chip 5 is large, and the leads are arranged in two stages. The plurality of first-stage leads 6 on the lower side and the plurality of leads 7 on the upper side are arranged alternately as viewed from above, as shown in FIG. Before the semiconductor chip 5 is sealed with a sealing material 8 such as a resin, the leads 6 and 7 are connected to the electrode pads 5a on the semiconductor chip 5 by the gold wire 4 by wire bonding.

FIGS. 4 (a) and 4 (b) are structural views showing the essential parts of a conventional wire bonder. This wire bonder has
Two magazines 12, 1 for accommodating the lead frame 11
3, a monitor 14, and a bonding head 15. The magazine 12 accommodates the lead frame 11 before wire bonding. On the lead frame 11, a plurality of leads 2 or 6, 7 are formed and the semiconductor chip 1 or 5 is mounted. The lead frame 11 carried out from the magazine 12 is a stage provided between the magazine 12 and the magazine 13,
It is designed to be wire bonded. The magazine 13 accommodates the lead frame 11 for which wire bonding has been completed. The monitor 14 is used, for example, when an operator observes the state of the bonding head 15. The bonding head 15 includes a transducer 16 protruding from the bonding head 15.
Has a function of setting the position of the capillary 17 attached to the tip of the transducer 16.

The capillary 17 has a cylindrical shape with a sharp tip, through which the gold wire 4 drawn from the spool 18 is inserted. Between the spool 18 and the capillary 17, a guide for the gold wire 4 (not shown), an air tension 19 for applying a tension to the gold wire 4 by air pressure, and the like are provided. The wire bonder is further provided with a heating means (not shown) for heating the gold wire 4 at the tip of the capillary 17 by electric discharge or the like, and the gold wire 4 is connected to the electrodes of the semiconductor chips 1 and 5 by wire bonding using thermocompression bonding. Connect to pads and leads 2, 6, 7. In the wire bonding, even when the first-stage lead 6 and the second-stage lead 7 are provided, the first-stage lead 6 and the second-stage lead 6 are alternately connected to the pad 5a by the gold wire 4 one by one. .

[0006]

However, the conventional semiconductor device shown in FIG. 3 has the following problems. In the semiconductor device having the two-stage leads, the electrode pads 5a of the semiconductor chip and the leads 6 and 7 are arranged at a narrow pitch without exception. Therefore, when the semiconductor device is wired by the wire bonder of FIG. The frequency of occurrence of wire shorts due to crossing of four was high. Also,
Even if the wire bonding is completed successfully, the gold wire 4 may flow due to the pressure of the resin when the resin is sealed, and a wire short circuit may occur.

FIG. 5 is a diagram showing the height of the gold wire. In order to avoid the problem of wire short, the first stage lead 6
It is necessary to change the passing height of the gold wire 4 connected to and the gold wire 4 connected to the second stage lead 7. If the gold wire 4 connected to the second-stage lead 7 is managed so as to pass through a position higher than the gold wire 4 connected to the first-stage lead 6, adjacent gold wires 4 will not come into contact with each other. However, the height of the gold wire 4 is such that when the tip of the gold wire 4 is melted by heating to form a gold sphere 19 and the gold sphere 19 is pressed against the electrode pad 5a, the hard recrystallization region 20 above the gold sphere 9 is formed. Depends on height. Therefore, it was difficult to change the height for each gold wire 4. Further, the height of the recrystallized region 20 is as long as the same gold wire 4 is used,
It is almost determined by the material, so even if the height is changed, the difference between the upper and lower limits is 100μ at most.
It was about m and the wire short could not be completely avoided.

[0008]

In order to solve the above-mentioned problems, a first invention of the present invention is directed to a semiconductor chip in which a plurality of electrode pads are arranged so as to be exposed on the surface, and a predetermined number of semiconductor chips are provided. A plurality of first-stage leads arranged at a distance, and a plurality of first-stage leads arranged at a predetermined distance from the semiconductor chip and above the plurality of first-stage leads and alternately with respect to the first-stage leads. Second-stage lead, a first bonding wire connecting each of the plurality of selected electrode pads and each of the first-stage leads, a plurality of selected electrode pads and each of the second-stage leads, A second bonding wire for connecting the semiconductor chip and the first bonding wire.
A semiconductor device having a second bonding wire and a sealing member that seals the semiconductor chip side of the first and second leads is configured as follows.

That is, impurities in the second bonding wire
Concentration than the impurity concentration of the first bonding wire
It is high comb. By adopting such a configuration,
There is a difference in flexibility between the first and second bonding wires, so that above the amorphous region, the second bonding wire will take a higher path than the first bonding wire.

[0010]

In the second aspect of the invention, a semiconductor chip in which a plurality of electrode pads are exposed and arranged on the surface, a plurality of first-stage leads arranged at a predetermined distance from the semiconductor chip, and a predetermined number from the semiconductor chip are arranged. For a semiconductor device having a plurality of second-stage leads that are arranged above the plurality of first-stage leads and are alternately arranged with respect to the plurality of first-stage leads, with the electrode pad and the plurality of In the wire bonding method for connecting the first-stage and second-stage leads by wire bonding, the following method is taken.

That is, the first wire bonding step of connecting the selected electrode pad of the plurality of electrodes and each first stage lead with the first bonding wire respectively, and the first bonding wire has a diameter or an impurity concentration. The second wire bonding step of connecting the selected electrode pad of the plurality of electrodes and each of the second-stage leads with the second bonding wire of which is different from each other is separately performed. By adopting such a wire bonding method, the first wire bonding step and the second wire bonding step are performed separately, so that the first and second bonding wires in the semiconductor device of the first invention are performed. Easy management of connections.

According to the third aspect of the invention, a semiconductor chip in which a plurality of electrode pads are exposed and arranged on the surface, a plurality of first-stage leads arranged at a predetermined distance from the semiconductor chip, and a predetermined number from the semiconductor chip are provided. For a semiconductor device having a plurality of second-stage leads that are arranged above the plurality of first-stage leads and are alternately arranged with respect to the plurality of first-stage leads, with the electrode pad and the plurality of In the wire bonding method for connecting the first-stage and second-stage leads by wire bonding, the following method is taken.

That is, with a first bonding wire, a first wire bonding step of connecting a selected electrode pad among a plurality of electrodes to each first-stage lead or each second-stage lead, and an outer periphery of an insulator. Second coated
The second wire bonding step of connecting the selected electrode pad of the plurality of electrodes and the plurality of unconnected second-stage leads or first-stage leads respectively is performed separately. . By adopting such a wire bonding method, the first wire bonding step and the second wire bonding step are performed separately, so that the first wire bonding method in the semiconductor device of the first invention is performed.
Also, the connection of the second bonding wire can be easily managed.

According to the fourth aspect of the invention, a semiconductor chip having a plurality of electrode pads exposed and arranged on the surface thereof, a plurality of first-stage leads arranged at a predetermined distance from the semiconductor chip, and a predetermined number of semiconductor chips are provided. For a semiconductor device having a plurality of second-stage leads that are arranged above the plurality of first-stage leads and are alternately arranged with respect to the plurality of first-stage leads, with the electrode pad and the plurality of A wire bonder that connects the first-stage lead and the second-stage lead by wire bonding has the following configuration.

That is, a semiconductor chip is placed on the magazine and a magazine for accommodating a lead frame on which a plurality of first and second leads are formed and a lead frame are taken out from the magazine and conveyed to a predetermined position. After the wire bonding to the semiconductor chip is completed, the lead frame is conveyed from the predetermined position and accommodated in the magazine, and the first bonding wire for connecting the first bonding wire to the first stage lead is stored. And a second spool that stores a second bonding wire for connecting to the second stage lead, and is arranged on the left side of a predetermined position,
The process of press-contacting the selected electrode pad and the first-stage lead with the first bonding wire fed from the first spool in order is repeated to connect the plurality of first-stage leads and the corresponding plurality of electrode pads. The first bonding head is disposed on the right side of a predetermined position, and the selected electrode pad and the second bonding lead are sequentially pressed with the second bonding wire fed from the second spool. A second bonding head that connects the second-stage lead and a plurality of corresponding electrode pads is provided.

Since the first bonding head and the second bonding head are provided by adopting such a configuration, the connection of the first bonding wire in the first and second inventions is connected to the first bonding. And the second bonding wire is connected by the second bonding head. That is, one wire bonder connects the first and second bonding wires. Therefore, it is not necessary to move the magazine to another wire bonder.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION First Embodiment FIG. 1 is a perspective view of a main part of a semiconductor device showing a first embodiment of the present invention. This semiconductor device includes a rectangular semiconductor chip 31. On the surface of the semiconductor chip 31,
A plurality of exposed electrode pads 31a are arranged. At a position separated from each side of the semiconductor chip 31 by a predetermined distance,
First stage leads 32 are arranged. First stage lead 32
A plurality of second stage leads 33 are arranged above each of the first stage leads 32 so as to alternate with the first stage leads 32. Lead 32
The lead 33 and the lead 33 are terminals for connecting the semiconductor device to the outside, and the selected electrode pad 31a and the first-stage lead 32 are the gold wire 34 which is the first bonding wire.
Then, they are connected by wire bonding. The selected electrode pad 31a and the second stage lead 33 have the second
The gold wire 35, which is a bonding wire of, is connected by wire bonding. The gold wire 34 is, for example, 30
The wire diameter of the gold wire 35 is 40 μm.
The gold wire 34 and the gold wire 35 respectively connect the electrode pad 31a and the leads 32 and 33 through different heights as shown in FIG.

FIG. 6 is a diagram showing the height of the gold wire in FIG. The gold wire 34 passes through a place where the height difference between the leads 32 and 33 is about 100 μm or less, and the gold wire 35 passes through a place where the height of the second stage lead 33 is 400 μm or more. This is because the wire diameters of the gold wires 34 and 35 are different, so that the height of the recrystallized portion 37 on the upper side of the gold ball 36 capable of wire bonding and the portion 38 other than the recrystallized portion 37 of the gold wires 34 and 35 are 38.
The results are controlled by utilizing the different flexibility of the. A part of the semiconductor chip 31, the gold wires 34 and 35, and the leads 32 and 33 are sealed with a sealing material such as a resin (not shown).

Next, a wire bonding method for the semiconductor device of FIG. 1 will be described. As shown in Fig. 1, two types of gold wire 3
When wire bonding is carried out with 4, 35, two conventional wire bonders of FIG. 4 are used. The gold wire 34 is wound around the spool 18 of the first wire bonder, and the gold wire 35 is wound around the spool 18 of the second wire bonder. Then, the first wire bonder performs the first wire bonding step, and the second wire bonder performs the second wire bonding step.

In the first wire bonding step, the magazine 12 of the first wire bonder accommodates the lead frame on which the semiconductor chip 31 not subjected to wire bonding is placed and the leads 32 and 33 are formed. First, operate the wire bonder. Wire bonder
The lead frame is carried out from the magazine 12, the electrode pad 31a of the semiconductor chip 31 and the first stage lead 32 are selected, and wire bonding is performed with the gold wire 34. In this wire bonding, the tip of the gold wire 34 is heated to about 110 μm.
Make a gold ball 36 of m, and select this electrode pad 31
Press against a. As a result, the gold wire 34 is connected and cooled to form the amorphous region 37. The wire Honda moves the capillary 17 by using the bonding head 15, positions the capillary 17 above the selected lead 32, and again heat-presses the gold wire 34 to the lead 32.
Connect to. Gold wire 3 that has been connected to the lead 32
4 is cut.

When wire bonding is completed for all the first-stage leads 32, the lead frame is housed in the magazine 13. The magazine 13 of the first wire bonder is set as the magazine 12 of the second wire bonder, and the second wire bonder is operated to perform the second wire bonding step. The second wire bonder carries out the lead frame from the magazine 12 and selects the remaining electrode pad 31a of the semiconductor chip 31 and the second stage lead 33 in the same manner as in the first wire bonding step to select the gold wire 35. Wire bonding with. After wire bonding to the plurality of second-stage leads 33 is completed, the lead frame is housed in the magazine 13. In the lead frame housed in the magazine 13 of the second wire bonder, as shown in FIG. 6, the heights of the gold wires 34 and 35 are different.

As described above, in the first embodiment,
Since the wire diameters of the gold wires 34 and 35 are different, the passing positions of the gold wires 34 and 35 can be sufficiently changed due to the difference in flexibility. Therefore, the occurrence of wire short circuit is eliminated. Furthermore, since the first wire bonding step and the second wire bonding step are performed separately, the gold wire 3
It is possible to easily manage the connections of 4, 35.

Second Embodiment FIG. 7 is a perspective view of a main part of a semiconductor device showing a second embodiment of the present invention. Elements common to those in FIG. 1 showing the first embodiment are shown in FIG. Are assigned common reference numerals. This semiconductor device has a semiconductor chip 31 on which electrode pads 31a similar to those of the first embodiment are arranged, a first stage lead 32 and a second stage lead 33. The selected electrode pad 31a and the first-stage lead 32 are connected by a gold wire 34 which is a first bonding wire similar to the first embodiment. The remaining electrode pad 31a and the second lead 33
Are connected by wire bonding with an insulating type gold wire 40, which is a second bonding wire different from that of the first embodiment. The outer circumference of the gold wire 40 is covered with an insulating film. A part of the semiconductor chip 31, the gold wires 34 and 40, and the leads 32 and 33 are sealed with a sealing material such as resin (not shown). In this wire bonding method for a semiconductor device, as in the first embodiment, for example,
Using the wire bonder of the stand, the gold wires 34 and 40 and the leads 32 and 33 are connected in the first wire bonding step and the second wire bonding step separately.

As described above, in the second embodiment,
Since the gold wire 40 is an insulation type, there is an advantage that even if the gold wire 40 comes into contact with the gold wire 34, no wire short circuit occurs. Moreover, since the gold wire 34 is not of the insulation type as in the first embodiment, the reduction in the wire bonding speed can be minimized as compared with the case where all of the bonding wires are insulation type. Furthermore, gold wire 3
Since it is not necessary to control the passing heights of 4 and 40, the thickness of the sealing member can be reduced.

Third Embodiment FIGS. 8 (a) and 8 (b) are configuration diagrams of a main part of a wire bonder showing a third embodiment of the present invention. FIG. 8 (a) is a plan view and FIG. Figure (b) is a front view. In the first and second embodiments, the wire bonding of the semiconductor device is performed by the two wire bonders in the first wire bonding step and the second wire bonding step.
The wire bonder of FIG. 8 is a wire bonder that performs the first wire bonding step and the second wire bonding step by one unit. In this wire bonder, a magazine 5 for accommodating a lead frame 50 on which a semiconductor chip is placed and a plurality of first-stage and second-stage leads is formed
1 is arranged in the magazine installation section 52. The magazine installation section 52 is provided with a pusher 53 that pushes the accommodated lead frame 50 forward.

A frame feed claw 54 for feeding the lead frame 50 is provided in front of the magazine setting section 52, and after the lead frame 50 is moved to a predetermined position and wire bonding is completed, the lead frame 50 is moved to the magazine. A conveying means 55 for accommodating again in 51 is provided. The first bonding head 56 is arranged on the left side of the predetermined position on the conveying means 55, and the second bonding head 57 is arranged on the right side. A transducer 58 projects from the bonding head 56 toward a predetermined position, and a transducer 59 projects from the bonding head 57 toward the predetermined position. Cylindrical capillaries 60 and 61 are attached to the tips of the transducers 58 and 59, respectively. The first bonding wire 62 is inserted through the capillary 60, and the second bonding wire 63 is inserted through the capillary 61.

A first spool 64 and a second spool 65, on which the bonding wires 62 and 63 are wound and stored, are mounted above the respective transducers 58 and 59. Spools 64 and 65 and capillaries 6
Between 0 and 61, there are provided guides 66 and 67, and air tension (not shown) for applying tension to the bonding wires 62 and 63 by air pressure. And two monitors 68 and 69 are installed in the uppermost part of this wire bonder. When wire bonding of a semiconductor device having a first stage lead and a second stage lead is performed with this wire bonder, for example, the left bonding head 56 is used in the first first wire bonding step. That is,
Pusher 53, lead frame feed claw 54, and conveyance means 5
5 is driven to move the lead frame 50 to a predetermined position. Then, the transducer 58 is moved by the bonding head 56, the capillary 60 is moved between the electrode pad on the semiconductor chip and the first-stage lead, and wire bonding is performed by thermocompression bonding. When all the first stage leads are connected, the transducer 58
To move the capillary 60 to a position where it will not interfere with the next wire bonding.

After the capillary 60 is retracted, the second wire bonding step is started. In the second wire bonding step, the transducer 59 is moved by the bonding head 57, the capillary 61 is moved between the electrode pad on the semiconductor chip and the second-stage lead, and wire bonding is performed by thermocompression bonding. The capillary 61 is evacuated when the connection to all the second-stage leads is completed. When a plurality of semiconductor chips are mounted on the lead frame, the series of first and second wire bonding steps described above is performed for each semiconductor chip. After the connection to all the semiconductor chips is completed, the lead frame feed claws 54 and the conveying means 55 are driven to store the lead frame 50 in the magazine 51 again, and the wire bonding to the next lead frame 50 is performed.

As described above, in the third embodiment,
The lead frame 50 conveyed from the magazine 51 is provided with two sets of bonding heads 56 and 57 on the wire bonder.
On the other hand, the bonding head 56 is used to connect the first-stage leads by wire bonding, the bonding head 57 is used to connect the second-stage leads, and the lead frame 50, which has been finished, is housed in the magazine 52 again. It is configured. Therefore, unlike the first and second embodiments, since two wire bonders are not used even when the bonding wires 62 and 63 are different, the magazine 51 does not move and the production efficiency is improved. In addition, since the height of the bonding surface and the variation in temperature can be eliminated, more stable wire bonding is possible. In other words, if the height of the bonding surface varies, the variation in the height of the bonding wire also increases, resulting in a difference in bondability. For example, when manufacturing the semiconductor device of the first embodiment, management is difficult. However, this problem can be solved. Furthermore, since there is only one magazine 51, it is possible to reduce conveyance defects due to errors in magazine dimensions.

The present invention is not limited to the above embodiment, and various modifications can be made. The following are examples of such modifications. (1) In the first embodiment, the gold wire 3 with respect to the gold wire 34
Although the flexibility is changed with the wire diameter of 5, the flexibility may be changed by increasing the impurity concentration of the gold wire 35. (2) In the third embodiment, the wire bonder suitable for the semiconductor device having both the first-stage lead and the second-stage lead is shown. However, this wire bonder can also be used for wire-bonding a semiconductor device having only the first-stage lead. It can be carried out. In this case, the time required for bonding can be reduced to about half that of the conventional method.

[0032]

As described above in detail, according to the first invention, the impurity concentration of the second bonding wire is
Having higher than the impurity concentration of the first bonding wire, flexible difference occurs in the first and second bonding wires, a second bonding wire passes through the higher path than the first bonding wires. This eliminates wire shorts.

[0033]

According to the second and third inventions, is performed Separating the first wire Bonn Dinh grayed step and the second wire bonding step, the first and second in the first and second semiconductor device The connection of the bonding wire can be easily managed. According to the fourth invention, since the first bonding head and the second bonding head are provided, the first bonding head is provided.
In the second invention, the first bonding wire is connected by the first bonding head, and the second bonding wire is connected by the second bonding head. That is, one wire bonder connects the first and second bonding wires.
Therefore, it is not necessary to move the magazine to another wire bonder, and efficient and stable wire bonding can be performed.

[Brief description of drawings]

FIG. 1 is a perspective view of a main part of a semiconductor device showing a first embodiment of the present invention.

FIG. 2 is a perspective view showing an example of a conventional semiconductor device.

FIG. 3 is a diagram showing another example of a conventional semiconductor device.

FIG. 4 is a configuration diagram showing a main part of a conventional wire bonder.

FIG. 5 is a diagram showing the height of a gold wire.

6 is a diagram showing the height of the gold wire in FIG.

FIG. 7 is a perspective view of a main part of a semiconductor device showing a second embodiment of the present invention.

FIG. 8 is a configuration diagram of a main part of a wire bonder showing a third embodiment of the present invention.

[Explanation of symbols]

31 semiconductor chips 31a Electrode pad 32 1st stage lead 33 Second lead 34,35 gold wire 40 Insulation type gold wire 50 lead frame 51 magazine 55 Transporting means 56,57 Bonding head 58, 59 Transducer 60,61 capillaries 62, 63 Bonding wire

─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/60

Claims (4)

(57) [Claims] 1. A semiconductor chip having a plurality of electrode pads exposed and arranged on a surface thereof, a plurality of first-stage leads arranged at a predetermined distance from the semiconductor chip, and a predetermined distance from the semiconductor chip. The plurality of ones
A plurality of second-stage leads which are arranged above the first-stage leads and which are alternately arranged with respect to the plurality of first-stage leads; an electrode pad selected from the plurality of the second-stage leads; and each of the first-stage leads. A first bonding wire connected to each other; a second bonding wire connecting each selected electrode pad of the plurality of electrodes to each of the second-stage leads; the semiconductor chip, the first and second bonding wires; In a semiconductor device including a bonding wire and a sealing member that seals the semiconductor chip side of the first and second leads, the impurity concentration of the second bonding wire is the first bonding wire. The semiconductor device is characterized by having a higher impurity concentration than the above . 2. A plurality of electrode pads are exposed and arrayed on the surface.
A fixed semiconductor chip and a predetermined distance from the semiconductor chip.
A plurality of first-stage leads arranged apart from each other;
The plurality of first-stage leads are separated from the body chip by a predetermined distance.
Alternate above the lead and for the multiple first-stage leads
Device having a plurality of second-stage leads arranged in a row
In contrast, the electrode pad and the plurality of first and second stages
Wire bond that connects leads by wire bonding
In the bonding method, a selected electrode pad of the plurality and the first step
Connect the leads with the first bonding wire respectively.
First wire bonding step and the diameter or impurity concentration than said first bonding wire that
A second bonding wire having a different
The selected electrode pad and each of the second stage leads
Separate from the second wire bonding step for connecting each
Wire bonder for semiconductor device
How to go. 3. A plurality of electrode pads are exposed and arranged on the surface.
A fixed semiconductor chip and a predetermined distance from the semiconductor chip.
A plurality of first-stage leads arranged apart from each other ;
The plurality of first-stage leads are separated from the body chip by a predetermined distance.
Alternate above the lead and for the multiple first-stage leads
Device having a plurality of second-stage leads arranged in a row
In contrast, the electrode pad and the plurality of first and second stages
Wire bond that connects leads by wire bonding
In the bonding method, a selected electrode pad of the plurality and the first step
Connect the lead or the second stage lead to the first bonding wire.
First wire bonding step for connecting each
And a second bond whose outer periphery is coated with an insulator
The wire is not connected to the selected electrode pad of the plurality.
The plurality of second-stage leads or first-stage leads for connection
The second wire bonding step of connecting each,
Wire bonder for semiconductor device characterized by being performed separately
Swing method. 4. A plurality of electrode pads are exposed and arrayed on the surface.
A fixed semiconductor chip and a predetermined distance from the semiconductor chip.
A plurality of first-stage leads arranged apart from each other;
The plurality of first-stage leads are separated from the body chip by a predetermined distance.
Alternate above the lead and for the multiple first-stage leads
Device having a plurality of second-stage leads arranged in a row
In contrast, the electrode pad and the plurality of first-stage leads and
Wire that connects to the second stage lead by wire bonding
In the bonder, the semiconductor chip is placed on top of the
Accommodates lead frames with second and second leads
And the lead frame from the magazine
The wire to the semiconductor chip
After the bonding is completed, the lead frame is
Conveying means for conveying from a predetermined position and accommodating in the magazine
And a first bonding for connecting to the first stage lead
A first spool for storing a wire and a second bonding for connecting to the second stage lead
A second spool for storing a wire and the selected electrode disposed to the left of the predetermined position
From the first spool to the pad and the first lead
Pressing the first bonding wire that has been fed out in order
Process is repeated, and the plurality of first-stage leads and
First bondie for connecting a plurality of corresponding electrode pads
Head and the selected electrode disposed on the right side of the predetermined position
From the second spool to the pad and the second lead
Pressing the second bonding wire that has been fed out in order
Repeat the process to
A second bondy that connects with a corresponding plurality of electrode pads
And a wire head.
Da.