JP3258104B2 - Charged beam irradiation method and apparatus - Google Patents

Charged beam irradiation method and apparatus

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Publication number
JP3258104B2
JP3258104B2 JP34009492A JP34009492A JP3258104B2 JP 3258104 B2 JP3258104 B2 JP 3258104B2 JP 34009492 A JP34009492 A JP 34009492A JP 34009492 A JP34009492 A JP 34009492A JP 3258104 B2 JP3258104 B2 JP 3258104B2
Authority
JP
Japan
Prior art keywords
nozzle
cleaning
vacuum vessel
beam irradiation
cleaning gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP34009492A
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Japanese (ja)
Other versions
JPH06188182A (en
Inventor
伊都子 酒井
誠 関根
伸夫 早坂
晴雄 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Publication date
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Priority to JP34009492A priority Critical patent/JP3258104B2/en
Publication of JPH06188182A publication Critical patent/JPH06188182A/en
Application granted granted Critical
Publication of JP3258104B2 publication Critical patent/JP3258104B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置の製造時に
用いられる荷電ビーム照射方法及び装置に関し、特に電
子照射によって堆積する汚染物を除去することができる
荷電ビーム照射方法及び装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for irradiating a charged beam used in manufacturing a semiconductor device, and more particularly to a method and an apparatus for irradiating a charged beam capable of removing contaminants deposited by electron irradiation.

【0002】[0002]

【従来の技術】荷電ビーム照射装置においては、電子の
照射により炭化水素系堆積物が装置内の部品等に付着す
ることが問題となっている。この堆積物は電子ビームを
用いる電子ビーム露光装置や各種分析装置のみならずイ
オンビーム照射装置においても、イオンビーム照射の際
発生する二次電子等によっても付着する。
2. Description of the Related Art In a charged beam irradiation apparatus, there is a problem that hydrocarbon-based deposits adhere to parts and the like in the apparatus due to irradiation of electrons. This deposit adheres not only to an electron beam exposure apparatus and various analyzers using an electron beam but also to an ion beam irradiation apparatus due to secondary electrons or the like generated upon ion beam irradiation.

【0003】炭化水素系堆積物はチャージアップの原因
となるため、大きな問題となっていた。例えば、電子ビ
ーム露光装置においてはチャージアップはビームドリフ
トの原因になるので露光精度に直接係わるものである。
[0003] Since hydrocarbon deposits cause charge-up, they have been a major problem. For example, in an electron beam exposure apparatus, charge-up is directly related to exposure accuracy because it causes beam drift.

【0004】従来は、問題になる程度のドリフトが生じ
た時点で真空容器を大気開放し、鏡筒を分解し、清浄な
部品と交換していた。しかしながら、電子ビーム露光装
置の鏡筒は極めて複雑に構成され、かつ高精度で組み立
てられているので、前記鏡筒を構成する部品の交換には
多大の労力と時間を要する。
[0004] Conventionally, at the time when a drift that causes a problem occurs, the vacuum vessel is opened to the atmosphere, the lens barrel is disassembled, and replaced with a clean part. However, since the lens barrel of the electron beam exposure apparatus is extremely complicated and assembled with high precision, it takes a great deal of labor and time to replace the components making up the lens barrel.

【0005】その結果、運転が中断する時間が増え、装
置の使用効率が大幅に低下するという問題が生じてい
た。
As a result, there has been a problem that the time during which the operation is interrupted is increased, and the efficiency of use of the apparatus is greatly reduced.

【0006】上記した問題を解決する方法及び装置とし
て、堆積物と反応して揮発性の化合物を形成すべく選択
された反応性ガスを真空容器内に導入しその揮発性の化
合物を真空容器から除去する方法及び装置がある(特開
昭60−77340号公報、特開平4−94524号公
報参照)。
As a method and apparatus for solving the above problems, a reactive gas selected to react with the sediment to form a volatile compound is introduced into a vacuum vessel and the volatile compound is removed from the vacuum vessel. There is a method and an apparatus for removing (see JP-A-60-77340 and JP-A-4-94524).

【0007】しかし、これら方法及び装置では真空容器
内全域に反応性ガスが充満するため、最も厚く堆積して
いるところを完全に除去するためには洗浄不要な部品ま
でも長時間反応性ガスにさらす結果になる。
However, in these methods and apparatuses, since the entire area inside the vacuum vessel is filled with the reactive gas, in order to completely remove the thickest deposited area, even parts that do not need to be cleaned are converted to the reactive gas for a long time. The result is a simplification.

【0008】電子ビーム露光装置等の場合、汚染はビー
ム軌道近傍に集中的に生じるものであり、このような方
式は無駄である。一方、真空容器内には様々な材質の部
品やリード線などがあるため、必要以上に反応性ガスを
導入すると、表面が酸化される等の欠点があった。
In the case of an electron beam exposure apparatus or the like, contamination occurs intensively near the beam trajectory, and such a method is useless. On the other hand, since there are components and lead wires of various materials in the vacuum vessel, if a reactive gas is introduced more than necessary, there is a defect that the surface is oxidized.

【0009】別の欠点として、荷電ビーム照射装置内の
狭い隙間の奥に反応性ガスを供給して洗浄を行おうとし
ても、途中で消費されたり、壁と衝突をして失活してし
まう。このため、静電偏向レンズの内部や細長いスリー
ブ等の筒形状の部品の内部を洗浄するのは困難であっ
た。
Another drawback is that even if cleaning is performed by supplying a reactive gas into a narrow gap in the charged beam irradiation apparatus, the reactive gas is consumed on the way or collides with a wall to be deactivated. . For this reason, it has been difficult to clean the inside of the electrostatic deflection lens and the inside of a cylindrical component such as an elongated sleeve.

【0010】[0010]

【発明が解決しようとする課題】従来の荷電ビーム照射
方法及び装置では、真空容器内全域に反応性ガスが充満
するため、洗浄不要な部品までも反応性ガスにさらさ
れ、表面が酸化されたり、狭い隙間を洗浄するのが困難
であるという問題があった。
In the conventional charged beam irradiation method and apparatus, since the entire area inside the vacuum vessel is filled with the reactive gas, even parts that do not require cleaning are exposed to the reactive gas, and the surface is oxidized. However, there is a problem that it is difficult to clean a narrow gap.

【0011】本発明は、上記事情に鑑みてなされたもの
であり、洗浄が不必要な他部品を損傷することなく、真
空容器に付着した汚染物のみを除去する事ができ、さら
に狭い隙間を洗浄可能な荷電ビーム照射方法及び装置を
提供することを目的とする。
The present invention has been made in view of the above circumstances, and it is possible to remove only contaminants adhering to a vacuum vessel without damaging other parts that do not require cleaning. It is an object of the present invention to provide a method and apparatus for irradiating a charged beam that can be cleaned.

【0012】[0012]

【課題を解決するための手段】前述した問題を解決する
ため、本発明の荷電ビーム照射方法は、荷電ビーム照射
装置の鏡筒内に設けられている該鏡筒の構成部品あるい
は該鏡筒の真空容器の内壁に付着した汚染物に、この汚
染物と反応して揮発性の化合物を形成する洗浄用ガス
を、該真空容器内圧力よりも高圧力で局所的に吹き付
け、前記汚染物を除去する工程を含むことを特徴として
いる。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a charged beam irradiation method according to the present invention comprises a component of the barrel provided in a barrel of the charged beam irradiation apparatus or a component of the barrel. A cleaning gas that reacts with the contaminant to form a volatile compound is sprayed locally onto the contaminant adhered to the inner wall of the vacuum vessel at a pressure higher than the internal pressure of the vacuum vessel to remove the contaminant. It is characterized by including the step of performing.

【0013】あるいは本発明の荷電ビーム照射方法は、
荷電ビーム照射装置の鏡筒内に設けられている該鏡筒の
構成部品あるいは該鏡筒の真空容器の内壁の汚染物が付
着する領域に、汚染物と反応して揮発性の化合物を形成
する洗浄用ガスを、該真空容器内圧力よりも高圧力で局
所的に荷電ビーム照射と同時に吹き付け、前記汚染物の
付着を防止する工程を含むことを特徴としている。
[0013] Alternatively, the charged beam irradiation method of the present invention comprises:
Reacts with contaminants to form a volatile compound in a region where the contaminants adhere to the components of the lens tube provided in the column of the charged beam irradiation apparatus or the inner wall of the vacuum vessel of the column. The method is characterized in that the method includes a step of spraying a cleaning gas simultaneously with the irradiation of the charged beam at a pressure higher than the pressure in the vacuum vessel and simultaneously preventing the contaminant from adhering.

【0014】また、本発明の荷電ビーム照射装置は、鏡
筒の真空容器の外部に設けられ、該真空容器内部へ洗浄
用ガスを導入するガス導入手段と、該ガス導入手段と接
続され、該ガス導入手段より前記真空容器内部へ導入す
る洗浄用ガスを、該真空容器内の構成部品あるいは該真
空容器の内壁に付着した汚染物に、該真空容器内圧力よ
りも高圧力で局所的に吹き付け可能な開口部を有するノ
ズルとを具備している。
The charged beam irradiation apparatus of the present invention is provided outside the vacuum vessel of the lens barrel, and is connected to a gas introduction means for introducing a cleaning gas into the vacuum vessel, and is connected to the gas introduction means. A cleaning gas introduced from the gas introduction means into the vacuum vessel is locally sprayed onto components inside the vacuum vessel or contaminants attached to the inner wall of the vacuum vessel at a pressure higher than the pressure inside the vacuum vessel. A nozzle having a possible opening.

【0015】なお、本発明の荷電ビーム照射方法及び装
置において、真空容器の外部に該真空容器と隔離可能な
洗浄室を設け、汚染された構成部品を真空度を保ったま
ま前記洗浄室へ搬送し、該洗浄室で洗浄した後、再び前
記真空容器へ部品を搬送するようにしても良い。
In the charged beam irradiation method and apparatus according to the present invention, a cleaning chamber is provided outside the vacuum vessel and separable from the vacuum vessel, and contaminated components are transferred to the cleaning chamber while maintaining the degree of vacuum. Then, after cleaning in the cleaning chamber, the components may be transported to the vacuum container again.

【0016】また、前記ノズルの開口は、洗浄しようと
している狭い隙間の内部に向けられるか、あるいは挿入
されるのがよく、さらに外側が金属、内側が非金属であ
るのが理想的である。
The opening of the nozzle is preferably directed or inserted into the narrow gap to be cleaned. Ideally, the outside is metal and the inside is nonmetal.

【0017】[0017]

【作用】本発明においては、荷電ビーム照射装置の真空
容器内で、ノズルにより洗浄用ガスを汚染された部分に
局所的に吹き付けるので、汚染物は効率よく除去され、
かつ洗浄が不必要な部分は反応性ガスにほとんどさらさ
れない。
In the present invention, the cleaning gas is locally sprayed to the contaminated portion by the nozzle in the vacuum vessel of the charged beam irradiation device, so that the contaminants are efficiently removed.
In addition, portions not requiring cleaning are hardly exposed to the reactive gas.

【0018】また本発明によれば、ノズルの先端を光学
系の静電偏向レンズやスリーブ等の狭い隙間の内部に挿
入し、洗浄ガスの活性種を失活させることなく奥まで十
分に供給する。
Further, according to the present invention, the tip of the nozzle is inserted into a narrow gap such as an electrostatic deflecting lens or a sleeve of an optical system, and the active species of the cleaning gas is sufficiently supplied to the back without deactivating. .

【0019】さらに本発明によれば、洗浄用ガスとして
放電により生成した活性種を用い、外側が金属、内側が
非金属であるノズルを用い電子ビームによるチャージア
ップを防止しながら活性種を失活させず、小流量の洗浄
ガスで効果的に洗浄することができる。
Further, according to the present invention, an active species generated by electric discharge is used as a cleaning gas, and a nozzle having a metal on the outside and a non-metal on the inside is used to deactivate the active species while preventing charge-up by an electron beam. Without cleaning, the cleaning gas can be effectively cleaned with a small flow rate of the cleaning gas.

【0020】さらにまた、真空容器と隔離可能な洗浄室
を設ければ、汚染された部品を荷電ビーム照射装置の真
空容器内の真空度を保ったまま、真空容器に外部に設け
られた洗浄室へ搬送し、真空室と洗浄室間を離隔してか
ら洗浄室内で洗浄ガスを吹き付けて部品を洗浄できるの
で、汚染された部品以外の部分を反応性ガスに全くさら
すことなく洗浄できる。
Further, if a cleaning chamber which can be separated from the vacuum container is provided, the cleaning chamber provided outside the vacuum container while maintaining the degree of vacuum in the vacuum container of the charged beam irradiation device while the contaminated parts are provided. The cleaning chamber is blown into the cleaning chamber after the cleaning gas is blown in the cleaning chamber after separating the vacuum chamber and the cleaning chamber from each other, so that parts other than the contaminated parts can be cleaned without being exposed to the reactive gas at all.

【0021】[0021]

【実施例】以下、本発明による荷電ビーム照射装置方法
及び装置の実施例を図面を参照しつつ詳細に説明する。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram of a charged beam irradiation apparatus according to an embodiment of the present invention;

【0022】図1は本発明における荷電ビーム照射方法
及び装置の第1の実施例を説明するための鏡筒の一部の
断面図である。
FIG. 1 is a sectional view of a part of a lens barrel for describing a first embodiment of a charged beam irradiation method and apparatus according to the present invention.

【0023】第1の実施例では、鏡筒の構成部品である
整形アパーチャへの汚染を防止する方法を示す。
In the first embodiment, a method for preventing contamination of the shaping aperture which is a component of the lens barrel will be described.

【0024】図1に示すように、鏡筒の真空容器1内に
は鏡筒の構成部品であるビーム収束用電磁コイル2と整
形アパーチャ3が取り付けられている。真空容器1の外
部には洗浄用ガス導入系4が設けられており、この洗浄
用ガス導入系4には洗浄用ガス導入系4より真空容器1
の内部へ洗浄用ガスを導入するノズル5が接続されてい
る。
As shown in FIG. 1, a beam focusing electromagnetic coil 2 and a shaping aperture 3 which are components of the lens barrel are mounted in a lens barrel vacuum vessel 1. A cleaning gas introduction system 4 is provided outside the vacuum vessel 1, and the cleaning gas introduction system 4 is provided with a vacuum vessel 1 from the cleaning gas introduction system 4.
Is connected to a nozzle 5 for introducing a cleaning gas into the inside.

【0025】ノズル5は、整形アパーチャ3上の電子ビ
ーム被照射領域6に局所的に吹き付け可能な開口部7を
有している。なお、8は照射される電子ビームを示して
いる。
The nozzle 5 has an opening 7 that can be locally sprayed on the electron beam irradiation area 6 on the shaping aperture 3. Reference numeral 8 denotes an electron beam to be irradiated.

【0026】まず、ビーム照射と同時に、洗浄用ガス導
入系4においてO2 ガスを高周波放電によって活性化
し、その結果発生する原子状酸素O* をノズル5により
導入、堆積物が付きやすい整形アパーチャ3の電子ビー
ム照射領域6に吹き付けた。
First, at the same time as the beam irradiation, the O 2 gas is activated by high-frequency discharge in the cleaning gas introduction system 4, and the resulting atomic oxygen O * is introduced by the nozzle 5, and the shaping aperture 3 where deposits are liable to adhere. Was sprayed onto the electron beam irradiation area 6 of the above.

【0027】実験の結果、洗浄用ガス0.5sccmを
ノズル5から吹き付けることにより整形アパーチャ3上
でのガス圧力は10-3Torr程度になったが直ちに拡
散し、真空容器1内の他の場所での真空度は10-6To
rr台に保たれ、図示しない試料上の電子ビーム精度に
変化は認められなかった。
As a result of the experiment, the gas pressure on the shaping aperture 3 was reduced to about 10 −3 Torr by spraying 0.5 sccm of the cleaning gas from the nozzle 5, but immediately diffused, and the gas was diffused to another location in the vacuum vessel 1. Vacuum degree is 10 -6 To
It was kept at the rr level, and no change was observed in the electron beam accuracy on the sample not shown.

【0028】ノズル5を使用しない従来の方法、つま
り、真空容器壁から洗浄ガスの導入を行った場合は同程
度の汚染防止効果を得るためには洗浄ガスの流量を5s
ccmに増やして圧力10-3Torrで真空容器1内を
充満させる必要があり、特に洗浄ガス充満空間中の電子
ビーム軌道が長い場合は電子ビームの収束に影響するの
で望ましくなかった。
In the conventional method without using the nozzle 5, that is, when the cleaning gas is introduced from the vacuum vessel wall, the flow rate of the cleaning gas is set to 5 seconds in order to obtain the same level of pollution prevention effect.
It is necessary to fill the vacuum vessel 1 with a pressure of 10 −3 Torr by increasing the pressure to 10 cm -3 . Particularly, when the electron beam trajectory in the space filled with the cleaning gas is long, it affects the convergence of the electron beam, which is not desirable.

【0029】第1の実施例のようにして露光を行うこと
により整形アパーチャ3上に堆積物が全く付かなくなっ
た。
By performing exposure as in the first embodiment, no deposits were left on the shaping aperture 3 at all.

【0030】図2は、本発明における荷電ビーム照射方
法及び装置の第2の実施例を説明するための真空容器の
一部の断面図である。図2において、図1と同一の部分
には同一符号を付している。
FIG. 2 is a sectional view of a part of a vacuum vessel for explaining a second embodiment of the charged beam irradiation method and apparatus according to the present invention. 2, the same parts as those in FIG. 1 are denoted by the same reference numerals.

【0031】第2の実施例では、光学系の静電偏向レン
ズ内部を洗浄する方法を示す。
In the second embodiment, a method for cleaning the inside of the electrostatic deflection lens of the optical system will be described.

【0032】図2に示すように、鏡筒の真空容器1内に
は鏡筒の構成部品であるビーム収束用電磁コイル2が取
り付けられ、ビーム照射の軌道上には静電偏向レンズ9
が配置されている。
As shown in FIG. 2, an electromagnetic coil 2 for converging a beam, which is a component of the lens barrel, is mounted in a vacuum vessel 1 of the lens barrel.
Is arranged.

【0033】真空容器1の外部には駆動装置10が設け
られ、駆動装置10には洗浄用ガス導入系4が接続され
ている。さらに駆動装置10には、洗浄用ガス導入系4
より駆動装置10を介して真空容器1の内部へ洗浄用ガ
スを導入するノズル5が接続されている。
A driving device 10 is provided outside the vacuum vessel 1, and the cleaning device 4 is connected to the driving device 10. Further, the driving device 10 includes a cleaning gas introduction system 4.
Further, a nozzle 5 for introducing a cleaning gas into the vacuum vessel 1 via a driving device 10 is connected.

【0034】ノズル5は、偏向レンズ9の開口部から狭
い内部に局所的に吹き付け可能な開口部7を有してい
る。
The nozzle 5 has an opening 7 that can be locally sprayed from the opening of the deflecting lens 9 into a narrow inside.

【0035】このノズル5は駆動装置10によって、洗
浄時にはその開口部7が偏向レンズ9の開口部に相対す
るように位置し(図中a)、電子ビーム照射時には電子
ビームの軌道から充分離れた位置bへと移動される。な
お、排気は下方向に行った。また、11は反射電子によ
る広範囲に及ぶ汚染物を示している本実施例において
は、電子ビーム露光装置を運転中、ノズル5の位置は待
機位置bとし、堆積物によるビームドリフト量が許容量
に近づいた時点で電子ビーム照射を停止し、駆動装置1
0によりノズル5を洗浄位置aへ移動した。
The nozzle 5 is positioned by the driving device 10 so that the opening 7 is opposed to the opening of the deflecting lens 9 at the time of cleaning (a in the figure), and is sufficiently separated from the trajectory of the electron beam at the time of electron beam irradiation. Moved to position b. The evacuation was performed in the downward direction. In this embodiment, reference numeral 11 denotes a wide range of contaminants due to reflected electrons. In the present embodiment, the nozzle 5 is set at the standby position b during operation of the electron beam exposure apparatus, and the amount of beam drift due to the deposits becomes an allowable amount. When approaching, the electron beam irradiation is stopped, and the driving device 1
By 0, the nozzle 5 was moved to the cleaning position a.

【0036】次に、洗浄用ガス導入系4においてO2
びCF4 ガスを高周波放電によって活性化し、その結果
発生するO* 及びF* をノズル5から、堆積物が付着し
た偏向レンズ9の上面及び内壁に吹き付けた。
Next, the O 2 and CF 4 gases are activated by high-frequency discharge in the cleaning gas introduction system 4, and the resulting O * and F * are discharged from the nozzle 5 through the nozzle 5 to the upper surface of the deflecting lens 9 on which the deposit has adhered. And sprayed on the inner wall.

【0037】ここで、図3に、内径4mmの細長いパイ
プ内部でのレジスト灰化速度分布を示す。横軸はパイプ
先端からの奥行き、縦軸はパイプ内部のレジスト灰化速
度である。
Here, FIG. 3 shows the distribution of the resist ashing rate inside the elongated pipe having an inner diameter of 4 mm. The horizontal axis represents the depth from the pipe tip, and the vertical axis represents the resist ashing rate inside the pipe.

【0038】aはパイプを洗浄用ガスのO* 及びF*
均一に真空容器内に充満させた雰囲気中に置いた場合、
bは内径7ミリのノズルをパイプの先端上2ミリの位置
に置きガスを吹き付けた場合である。但し、いずれの場
合もガスの流量は一定とした。
A is a pipe placed in an atmosphere in which O * and F * of the cleaning gas are uniformly filled in a vacuum vessel;
b shows the case where a nozzle having an inner diameter of 7 mm was placed at a position 2 mm above the end of the pipe and gas was sprayed. However, the flow rate of the gas was constant in each case.

【0039】ノズル5を使わない場合は全体的に灰化速
度が低く、しかもパイプ内部の奥行きに伴って低下して
いるが、ノズル5を用いた場合は灰化速度は非常に高
く、パイプの奥まで充分な灰化速度が保たれている。
When the nozzle 5 is not used, the incineration speed is low as a whole, and decreases with the depth inside the pipe. However, when the nozzle 5 is used, the incineration speed is extremely high, and A sufficient incineration rate is maintained to the back.

【0040】このように、従来の方法では、偏向レンズ
9やスリーブ等の細長い形状をした部品の内部は先端の
開口部から遠くなる程、活性種の供給量が減少するため
上述のレジスト灰化速度のように堆積物の除去速度も遅
くなり、場合によっては全く除去されなかった。
As described above, in the conventional method, since the supply amount of the active species decreases as the distance from the opening at the tip of the inside of an elongated component such as the deflection lens 9 and the sleeve decreases, the above-described resist ashing occurs. The rate of sediment removal was slow, as was the rate, and in some cases was not removed at all.

【0041】第2の実施例のように、ノズル5を用いれ
ば方向性を持つ局所的に高い圧力で多量の洗浄ガスを汚
染箇所に供給できるため、少量の洗浄ガスで効率良く、
しかも他の部品にはほとんど影響なく細長い形状の内部
まで活性種を供給できる。
As in the second embodiment, if the nozzle 5 is used, a large amount of cleaning gas can be supplied to a contaminated site at a locally high pressure having a directivity.
In addition, the active species can be supplied to the inside of the elongated shape with almost no influence on other parts.

【0042】図4は、本発明における荷電ビーム照射方
法及び装置の第3の実施例を説明するための断面図であ
る。
FIG. 4 is a cross-sectional view for explaining a third embodiment of the charged beam irradiation method and apparatus according to the present invention.

【0043】第1及び第2の実施例では、共に真空容器
内で部品を洗浄する方法を示したが、第3の実施例では
真空容器の外部に設けられた洗浄室で部品を洗浄する方
法を示す。
In the first and second embodiments, the method for cleaning the parts inside the vacuum vessel has been described. However, in the third embodiment, the method for cleaning the parts in the cleaning chamber provided outside the vacuum vessel is described. Is shown.

【0044】図4に示すように、鏡筒の真空容器1の外
部に洗浄室12が設けられており、この洗浄室12は洗
浄ガス導入系4と、これに接続されたノズル5と、真空
室13と、真空室13と真空容器1とを隔離する離隔バ
ルブ14と、排気系15と、搬送機構16とから構成さ
れている。
As shown in FIG. 4, a cleaning chamber 12 is provided outside the lens barrel vacuum vessel 1. The cleaning chamber 12 includes a cleaning gas introduction system 4, a nozzle 5 connected thereto, and a vacuum chamber. It comprises a chamber 13, a separation valve 14 for isolating the vacuum chamber 13 from the vacuum vessel 1, an exhaust system 15, and a transfer mechanism 16.

【0045】洗浄ガス導入系4に接続されたノズル5の
先端が、真空室13に挿入されており、真空室13の下
部には真空室13を真空に保ったり、ノズル5より供給
された洗浄用ガスを排気するための排気系15が取り付
けられている。
The tip of the nozzle 5 connected to the cleaning gas introduction system 4 is inserted into the vacuum chamber 13, and the lower part of the vacuum chamber 13 maintains the vacuum chamber 13 in a vacuum or the cleaning supplied from the nozzle 5. An exhaust system 15 for exhausting the utility gas is attached.

【0046】搬送機構16には、真空室13と鏡筒の真
空容器1との間で整形アパーチャ3を搬送するアパーチ
ャ・ホルダー17が取り付けられている。整形アパーチ
ャ3は、このアパーチャ・ホルダー17に固定され、真
空が保たれたまま真空室13と真空容器1との間を搬送
される。
The transport mechanism 16 is provided with an aperture holder 17 for transporting the shaping aperture 3 between the vacuum chamber 13 and the vacuum vessel 1 as a lens barrel. The shaping aperture 3 is fixed to the aperture holder 17 and is conveyed between the vacuum chamber 13 and the vacuum vessel 1 while maintaining a vacuum.

【0047】第3実施例によって、整形アパーチャ3の
洗浄を行うには、洗浄が必要になった時点で運転を停止
し、洗浄室13内の真空度を10-6Torr程度まで排
気系15で排気してから離隔バルブ14を開け、アパー
チャ3を洗浄室13内へ搬送する。
According to the third embodiment, in order to clean the shaping aperture 3, the operation is stopped when cleaning is necessary, and the degree of vacuum in the cleaning chamber 13 is reduced to about 10 −6 Torr by the exhaust system 15. After evacuation, the separation valve 14 is opened, and the aperture 3 is transported into the cleaning chamber 13.

【0048】その後、離隔バルブ14を閉めて真空容器
1と洗浄室13を完全に離隔してから洗浄ガス導入系4
により洗浄用ガスを導入し、ノズル5でアパーチャ3に
吹き付けて洗浄を行う。
Thereafter, the separation valve 14 is closed to completely separate the vacuum chamber 1 and the cleaning chamber 13 from each other.
, A cleaning gas is introduced, and the nozzle 5 sprays the gas onto the aperture 3 to perform cleaning.

【0049】洗浄終了後、洗浄用ガスを排気系15で完
全に排気してからアパーチャ3を真空容器1内の定位置
へ戻す。
After the cleaning, the cleaning gas is completely exhausted by the exhaust system 15, and then the aperture 3 is returned to the fixed position in the vacuum vessel 1.

【0050】第3の実施例によれば、電子ビーム露光装
置の真空を保ち、真空容器1内に反応性ガスを導入しな
くても、他の部品に影響を与えること無く必要な部品の
洗浄を行うことができる。
According to the third embodiment, the necessary parts can be cleaned without affecting the other parts without maintaining the vacuum of the electron beam exposure apparatus and introducing the reactive gas into the vacuum vessel 1. It can be performed.

【0051】以上、第1〜3の実施例で、本発明の荷電
ビーム照射方法及び装置を示したが、ノズルの形状は図
1,2,4に示した形状に限ること無く、形状や開口部
の大きさ・配置・数等は必要に応じて決定することがで
きる。
The charged beam irradiation method and apparatus of the present invention have been described in the first to third embodiments. However, the shape of the nozzle is not limited to those shown in FIGS. The size, arrangement, number, etc. of the parts can be determined as necessary.

【0052】以下に、ノズル形状の例を示す。The following is an example of the nozzle shape.

【0053】図5は、図2で示した偏向レンズ9の内部
をさらに効率よく洗浄するためのノズル形状を示したも
のである。ノズル5の全長にわたって、開口部7が設け
られており、偏向レンズ9の内壁にまんべんなく活性種
を供給できる。
FIG. 5 shows a nozzle shape for more efficiently cleaning the inside of the deflecting lens 9 shown in FIG. An opening 7 is provided over the entire length of the nozzle 5, so that active species can be evenly supplied to the inner wall of the deflecting lens 9.

【0054】この場合の待機位置bから洗浄位置へのノ
ズル5の動きは、水平方向に位置aへ移動した後、下方
向へ移動することにより、偏向レンズ9の開口部7から
狭い隙間へ挿入される。
In this case, the nozzle 5 moves from the standby position b to the cleaning position by moving the nozzle 5 horizontally to the position a and then moving downward so that the nozzle 5 is inserted into the narrow gap from the opening 7 of the deflecting lens 9. Is done.

【0055】さらに、図2で示した反射電子による広範
囲に及ぶ汚染物11に対しては、図6に示すような、円
形のノズル5の円周上に設けられた複数個の開口部7、
あるいは図7に示すような、円形のノズル5の円周上に
設けられた円形の開口部7が、広範囲に洗浄ガスを供給
することができ、効果的である。
Further, as shown in FIG. 6, a plurality of openings 7 provided on the circumference of the circular nozzle 5 with respect to the contaminant 11 over a wide range due to the reflected electrons shown in FIG.
Alternatively, the circular opening 7 provided on the circumference of the circular nozzle 5 as shown in FIG. 7 can supply the cleaning gas over a wide range, which is effective.

【0056】また、図8の断面図に示すように、ノズル
5の材質は、内面が非金属の石英管18でできており、
外面が金の薄膜19でめっきされているのが理想的であ
る。これにより、散乱電子よるノズル5のチャージアッ
プが防止され、全体が金属性のノズルに比べ、ノズル5
内を通る活性種が失活しにくくなり、より少ない洗浄ガ
ス量で効果が得られる。
As shown in the cross-sectional view of FIG. 8, the material of the nozzle 5 is a quartz tube 18 having a nonmetallic inner surface.
Ideally, the outer surface is plated with a thin film 19 of gold. As a result, charge-up of the nozzle 5 due to scattered electrons is prevented.
The active species passing through the inside are hardly deactivated, and the effect can be obtained with a smaller amount of cleaning gas.

【0057】[0057]

【発明の効果】以上説明したように本発明によれば、ノ
ズルを用いて洗浄用ガスを汚染物に高圧力で局所的に吹
き付けるようにしたので、荷電ビーム照射装置内の汚染
された部品、内壁、及び狭い隙間の内部を、他の部品を
損傷せずに洗浄することができる。
As described above, according to the present invention, a cleaning gas is locally blown to a contaminant at a high pressure by using a nozzle. The inner wall and the inside of the narrow gap can be cleaned without damaging other parts.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明における荷電ビーム照射方法及び装置の
第1の実施例を説明するための鏡筒の1部の断面図であ
る。
FIG. 1 is a sectional view of a part of a lens barrel for describing a first embodiment of a charged beam irradiation method and apparatus according to the present invention.

【図2】本発明における荷電ビーム照射方法及び装置の
第2の実施例を説明するための鏡筒の1部の断面図であ
る。
FIG. 2 is a sectional view of a part of a lens barrel for describing a second embodiment of a charged beam irradiation method and apparatus according to the present invention.

【図3】細長いパイプ内部でのレジスト灰化速度分布を
示す特性図である。
FIG. 3 is a characteristic diagram showing a resist ashing rate distribution inside an elongated pipe.

【図4】本発明における荷電ビーム照射方法及び装置の
第3の実施例を説明するための鏡筒の1部の断面図であ
る。
FIG. 4 is a sectional view of a part of a lens barrel for describing a third embodiment of a charged beam irradiation method and apparatus according to the present invention.

【図5】ノズルの形状の一例を示す図である。FIG. 5 is a diagram showing an example of a nozzle shape.

【図6】ノズルの形状の一例を示す図である。FIG. 6 is a diagram illustrating an example of the shape of a nozzle.

【図7】ノズルの形状の一例を示す図である。FIG. 7 is a diagram illustrating an example of a nozzle shape.

【図8】ノズルの材質を説明するための断面図である。FIG. 8 is a sectional view for explaining the material of the nozzle.

【符号の説明】[Explanation of symbols]

1 鏡筒の真空容器 3 整形アパーチャ 4 洗浄用ガス導入系 5 ノズル 7 ノズル開口部 9 偏向レンズ 10 駆動装置 12 洗浄室 13 真空室 14 離隔バルブ 15 排気系 16 搬送機構 17 アパーチャ・ホルダー DESCRIPTION OF SYMBOLS 1 Vacuum container of lens barrel 3 Shaping aperture 4 Gas introduction system for cleaning 5 Nozzle 7 Nozzle opening 9 Deflection lens 10 Drive unit 12 Cleaning room 13 Vacuum room 14 Separation valve 15 Exhaust system 16 Transport mechanism 17 Aperture holder

───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡野 晴雄 神奈川県川崎市幸区小向東芝町1 株式 会社東芝 研究開発センター内 (56)参考文献 特開 平3−19314(JP,A) 特開 昭63−308856(JP,A) 特開 昭61−59826(JP,A) 特開 平1−189123(JP,A) 特開 昭64−45123(JP,A) 特開 平1−293521(JP,A) 特開 平3−40418(JP,A) 特開 平3−76211(JP,A) 特開 平3−134175(JP,A) 実開 昭56−20268(JP,U) 特公 昭53−26112(JP,B1) (58)調査した分野(Int.Cl.7,DB名) H01L 21/027 H01J 37/16 H01J 37/18 H01J 37/305 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Haruo Okano 1 Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa Prefecture Toshiba R & D Center (56) References JP-A-3-19314 (JP, A) JP-A-63-308856 (JP, A) JP-A-61-59826 (JP, A) JP-A-1-189123 (JP, A) JP-A-64-45123 (JP, A) JP-A-1-293521 (JP) JP-A-3-40418 (JP, A) JP-A-3-76211 (JP, A) JP-A-3-134175 (JP, A) JP-A-56-20268 (JP, U) 53-26112 (JP, B1) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/027 H01J 37/16 H01J 37/18 H01J 37/305

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 荷電ビーム照射装置の鏡筒内に設けられ
ている該鏡筒の構成部品あるいは該鏡筒の荷電ビーム照
射可能な圧力の真空容器の内壁に、活性種を含む 洗浄用ガスを、外側が金属、内側が非金属であるノズルから前記圧力よ
りも高い圧力で 局所的に吹き付ける工程を含むことを特
徴とする荷電ビーム照射方法。
1. A component or lens barrel of lens barrel which is provided in the lens barrel of the charged particle beam irradiation apparatus charged beam irradiation
A cleaning gas containing an active species is applied to the inner wall of the vacuum vessel at a pressure capable of being sprayed from a nozzle having a metal outer surface and a non-metallic inner surface.
A method for locally irradiating a charged beam with a high pressure .
【請求項2】 前記吹き付ける工程を、前記荷電ビーム
照射と同時に行うことを特徴とする請求項1に記載の
電ビーム照射方法。
2. The method according to claim 1 , wherein the step of spraying includes the step of :
The charged beam irradiation method according to claim 1, wherein the irradiation is performed simultaneously with the irradiation.
【請求項3】 荷電ビーム照射可能な圧力の真空容器
と、 真空容器の外部に設けられ、活性種を含む洗浄用ガス
が発生するガス導入手段と、外側が金属、内側が非金属であり、前記 洗浄用ガスを、
該真空容器内の構成部品あるいは該真空容器の内壁に、
前記圧力よりも高い圧力で局所的に吹き付け可能なノズ
ルとを具備したことを特徴とする荷電ビーム照射装置。
3. A vacuum vessel having a pressure capable of irradiating a charged beam.
When provided outside of the vacuum chamber, the cleaning gas containing active species
The gas introduction means that generates , the outside is metal, the inside is non-metal, the cleaning gas,
On the components inside the vacuum vessel or on the inner wall of the vacuum vessel,
A nozzle capable of locally spraying with a pressure higher than the pressure .
【請求項4】 前記非金属が石英であることを特徴とす
る請求項3に記載の荷電ビーム照射装置。
4. A charged particle beam irradiation apparatus according to claim 3, wherein the nonmetal is quartz.
【請求項5】 前記洗浄用ガスが原子状酸素を含むこと
を特徴とする請求項1又は請求項2に記載の荷電ビーム
照射方法。
5. A charged particle beam irradiation method according to claim 1 or claim 2 wherein the cleaning gas is comprising atomic oxygen.
JP34009492A 1992-12-21 1992-12-21 Charged beam irradiation method and apparatus Expired - Fee Related JP3258104B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34009492A JP3258104B2 (en) 1992-12-21 1992-12-21 Charged beam irradiation method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34009492A JP3258104B2 (en) 1992-12-21 1992-12-21 Charged beam irradiation method and apparatus

Publications (2)

Publication Number Publication Date
JPH06188182A JPH06188182A (en) 1994-07-08
JP3258104B2 true JP3258104B2 (en) 2002-02-18

Family

ID=18333660

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3258104B2 (en)

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Publication number Priority date Publication date Assignee Title
JP2007149449A (en) * 2005-11-25 2007-06-14 Horon:Kk Device and method for preventing charged contamination
JP4930754B2 (en) * 2006-01-25 2012-05-16 エスアイアイ・ナノテクノロジー株式会社 Charged particle beam equipment
JP5183912B2 (en) * 2006-11-21 2013-04-17 株式会社日立ハイテクノロジーズ Charged beam apparatus and cleaning method thereof
JP5785436B2 (en) * 2011-05-09 2015-09-30 キヤノン株式会社 Charged particle beam drawing apparatus, cleaning method thereof, and device manufacturing method
US9327324B2 (en) * 2013-02-26 2016-05-03 Applied Materials Israel Ltd. Method and system for cleaning a vacuum chamber
JP6214441B2 (en) * 2014-03-18 2017-10-18 株式会社ニューフレアテクノロジー Deflector cleaning device and deflector cleaning method
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2828708A2 (en) * 2012-03-20 2015-01-28 Mapper Lithography IP B.V. Arrangement and method for transporting radicals
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