JP3210968B2 - Manufacturing method of electrostatic microactuator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electrostatic microactuator, and more particularly, to a microlens driving actuator, a microstage, and a micro vibration isolator for various optical pickups in an MO driving device, a DVD driving device, and the like. It can be suitably used as an actuator for various micro mechanisms such as a table,
The present invention relates to a method for manufacturing an electrostatic microactuator.

[0002]

2. Description of the Related Art With the development of micromachine technology,
There is an increasing demand for high performance microactuators. In particular, a high-performance electrostatic actuator that is extremely small and has excellent controllability is demanded for the above-described MO driving device. From such a viewpoint, demand for an electrostatic microactuator has been increasing in these fields in recent years. There are many types of electrostatic microactuators, such as a rotary type, a comb type, and a cantilever type. However, in the above-mentioned fields, since it is necessary to drive an optical pickup or the like from an in-plane to an out-of-plane, that is, from a certain surface in a vertical direction, mainly a cantilever type and a cantilever type are used. Electrostatic microactuators have been used.

[0003]

However, the cantilever-type electrostatic microactuator has a problem that the driving force generation point is largely displaced from the axis in the driving direction during driving in the vertical direction. Further, since both ends of the double-supported-type electrostatic actuator are fixed, the stroke in the thickness direction is smaller than the length of the beam. Therefore, it was necessary to use an electrostatic microactuator larger than the theoretically required size for the object to be driven. This has also been a factor in increasing the size of the MO driving device and the like.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a new electrostatic microactuator that can perform a large driving in the vertical direction and that does not change a driving force generation point during driving. And

[0005]

In order to achieve the above object, a method of manufacturing an electrostatic microactuator according to the present invention comprises the steps of forming a thin film made of an amorphous material having a supercooled liquid region on a predetermined substrate. Forming a spiral planar electrode by etching the thin film; and heating the planar electrode to a supercooled liquid region of the amorphous material, thereby deforming the planar electrode three-dimensionally and forming a spiral. And forming a drive electrode.

The present inventors have conducted intensive studies to achieve the above object. As a result, the substrate, the substrate electrode insulating layer,
The present inventors have conceived of an electrostatic microactuator including a substrate electrode, a drive electrode insulating layer, and a spiral drive electrode, which are stacked in this order. Then, an object to be driven is attached to the center of the spiral drive electrode,
The spiral drive electrode is moved up and down in a direction perpendicular to the substrate surface. Then, since the object always receives the driving force in the direction perpendicular to the substrate surface, the driving force generation point does not change during driving of the electrostatic microactuator.
In addition, they found that the stroke in the vertical direction was larger than that of a simple beam structure.

However, when the drive electrode is formed of a material such as polysilicon, nickel, or tungsten as in the prior art, the drive electrode is broken during the three-dimensional deformation due to the small elastic limit of these materials. There was a case. Further, there are many cases where the driving electrode is broken while the electrostatic microactuator is being driven. Therefore, the present inventors have conducted an extensive search for materials that can be used as drive electrodes.
As a result, it has been found that the above-mentioned problem can be solved by forming the drive electrode from an amorphous material having a supercooled liquid region, performing deformation in a state where the supercooled liquid region is heated and performing three-dimensional processing. Was.

That is, after a thin film made of the amorphous material is formed, a spiral flat electrode is formed in advance by etching the thin film. Then, when the planar electrode is three-dimensionally deformed to form the spiral drive electrode, the amorphous material is heated to a supercooled liquid region. Then, the flat electrode is 10 ⁸ to 10 ^{8 in the} deformation process.
It shows a viscous flow of 10 ¹³ Pa · S. Therefore, it is possible to prevent the flat electrode from being broken during the three-dimensional deformation. Further, the amorphous material obtained by heating and cooling the supercooled liquid region has no internal strain or the like, is extremely rich in flexibility, and exhibits a high elastic limit. Therefore, even when the driving electrode is driven in the vertical direction during driving of the electrostatic microactuator,
There is no possibility that the drive electrode is broken.

Therefore, according to the method of manufacturing the electrostatic microactuator of the present invention, the drive electrode can be driven in a direction perpendicular to the substrate surface, and the generation point of the driving force during driving is prevented from changing. be able to. Therefore, the size of the electrostatic microactuator can be reduced, and the size of the device on which the electrostatic microactuator is mounted can be reduced. In addition,
The “supercooled liquid region” in the present invention refers to a temperature region (ΔTx) from a glass transition temperature (Tg) to a crystallization start temperature (Tx).

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on embodiments of the present invention. Preferred embodiments of the manufacturing method of the electrostatic microactuator according to the present invention can be classified as follows depending on a method of three-dimensionally deforming the planar electrode.

FIGS. 1 to 11 are cross-sectional views showing respective steps in a case where a planar electrode is three-dimensionally deformed by its own weight to form a drive electrode. And a plan view. First, as shown in FIG. 1, a substrate electrode insulating layer 2 having a thickness of 0.01 to 10 μm is formed on a substrate 1 made of a semiconductor material by a thermal oxidation method or the like. Next, a substrate electrode layer is formed on the substrate electrode insulating layer 2 to a thickness of 0.01 to 5 μm by a sputtering method or the like. By patterning this substrate electrode layer by photolithography, the substrate electrode 3 having the substrate electrode pad portion 4 is formed. Next, C is placed on the substrate electrode 3.
The drive electrode insulating layer 5 is formed to a thickness of 10 to 10 by a VD method or the like.
It is formed to a thickness of 0 nm. Then, a sacrifice layer 6 is formed to a thickness of 1 to 50 μm on the drive electrode insulating layer 5 by a vacuum deposition method or the like, and is patterned.

FIG. 2 is a plan view of the assembly shown in FIG. 1 as viewed from above. As is clear from FIG. 2, the drive electrode insulating layer 5 is formed on the substrate electrode 3 so as to expose the substrate electrode pad portion 4. Further, the sacrifice layer 6 is patterned so that one side of the sacrifice layer 6 has a stepped shape on the drive electrode insulating layer 3. Next, as shown in FIG. 3, the polymer layer 7 is formed to a thickness of 1 to 2 so as to cover the entire substrate electrode 3 formed on the substrate 1 by spin coating or the like.
It is formed to a thickness of 00 μm. Next, a spirally patterned mask layer 8 is formed on the polymer layer 7 to a thickness of 0.01 to 1 μm by a sputtering method or the like.

Thereafter, as shown in FIG. 4, the polymer layer 7 is etched via the mask layer 8 by RIE (reactive ion etching) or the like. Next, a thin film 9 made of an amorphous metal having a supercooled liquid region is formed to a thickness of 0.5 to 100 μm by a sputtering method or the like.
After that, as shown in FIG. 5, the polymer layer 7 is removed using an acid solution, thereby forming the planar electrode pattern 10. FIG. 6 is a plan view when the assembly shown in FIG. 5 is viewed from above. As can be seen from FIG. 6, the planar electrode pattern 10 has a spiral shape.

Next, the assembly shown in FIGS. 5 and 6 is installed in a vacuum infrared heating device (not shown). After evacuating the inside of the apparatus to preferably 10 ⁻⁴ Pa or less, FIG.
The assembly is irradiated with infrared light to heat the supercooled liquid region of the amorphous material as shown in FIG. Thereafter, the substrate is cooled to room temperature, and the sacrifice layer 6 is removed by etching using an acid solution as shown in FIG.

The steps shown in FIGS. 7 and 8 are not essential in this embodiment. However, by heating the plane electrode pattern 10 made of an amorphous material having a supercooled liquid region to the supercooled liquid region, the internal stress of the plane electrode pattern 10 is reduced. Therefore, when forming the planar electrode 11 by removing the sacrificial layer 6, it is possible to effectively prevent the planar electrode 11 from being curved or broken.

When the flat electrode is heated by infrared rays as described above, the heating rate is preferably 1 to 10 ° C./min, and the holding time at the ultimate temperature is preferably 0.5 to 10 minutes.

Next, the assembly shown in FIG. 5 is put into a vacuum infrared heating apparatus (not shown) similar to the above, and is installed upside down in the apparatus by an installation jig 12 as shown in FIG. The installation jig 12 has an opening 13 for irradiating the assembly with infrared light. Next, while irradiating infrared rays from the front surface of the assembly through the opening 13 and irradiating infrared rays also from the substrate 1 side to the assembly, the planar electrode 11 made of an amorphous material having a supercooled liquid region is irradiated with the infrared rays. Heat to the cooling liquid area.
Then, since the plane electrode 11 shows a viscous flow, the plane electrode 11 is three-dimensionally deformed by its own weight as shown in FIG. Then, by stopping the heating operation after a predetermined time has elapsed, the three-dimensional deformation is stopped, and a spiral drive electrode 14 as shown in FIG. 11 can be obtained. An actuator can be obtained.

The heating by the above-mentioned infrared irradiation is 1 to
It is preferable that the heating is performed at a heating rate of 100 ° C./min, and that the holding time at the ultimate temperature be 1 to 10 minutes. The heating of the flat electrode 11 made of an amorphous material having a supercooled liquid region to the supercooled liquid region may be performed by induction heating, resistance heating, or the like, in addition to the infrared heating.

As the thin film 9, that is, the amorphous material having a supercooled liquid region constituting the plane electrode 11 and the drive electrode 14, the glass transition temperature of the supercooled liquid region is 200 to 600.
° C is preferable, and more preferably 250 to 40 ° C.
Those in the range of 0 ° C. are preferred. And it is preferable that the temperature width of the supercooled liquid region is 20 ° C. or more. Thus, the heating process of the flat electrode made of such an amorphous material can be simplified, and the influence of temperature fluctuation during heating can be reduced. Further, it is possible to widen the range of material selection for the base on which the amorphous material is formed and the jig for holding the base. Such amorphous materials include Zr-Cu-Al, Pd-Cu-Si, Pd
-Ni-P and Au-Si can be exemplified.

The semiconductor material constituting the substrate 1 may be a semiconductor material such as silicon or gallium, a glass material such as Pyrex or silicon oxide, a polymer material such as polyimide or bakelite, or a metal material such as copper or aluminum. Can be used. Similarly, the substrate electrode 3 can be made of a known conductive material such as chromium, nickel, and aluminum. The substrate electrode insulating layer 2 and the drive electrode insulating layer 5 can also be made of a known insulating material such as silicon oxide, silicon nitride, and polyimide. Further, the sacrificial layer 6 can be made of nickel, silicon oxide, aluminum, chromium, or the like. For the polymer layer 7, polyimide, bakelite, resist, or the like can be used.
Chromium, aluminum, silicon oxide, or the like can be used for the mask layer 8.

FIGS. 12 to 14 are cross-sectional views showing respective steps in a case where a planar electrode is deformed by a mechanical external force to form a drive electrode. is there. First, as shown in FIG.
The substrate electrode insulating layer 2 is formed on both surfaces of the substrate 21 by a thermal oxidation method or the like.
2 and the mask layer 26 each have a thickness of 0.01 to 10 μm.
m and 0.01 to 1 μm. Next, the openings 28 and 30 are formed by patterning the substrate electrode insulating layer 22 and the mask layer 26. Next, the substrate electrode 23 is formed on the substrate electrode insulating layer 22 to a thickness of 0.01 to 5 μm by using a sputtering method and a means of photolithography.
m.

Thereafter, the drive electrode insulating layer 25 and the protective layer 27 are each formed to a thickness of 10 to 100 n by a CVD method or the like.
m and 0.01 to 5 μm. Next, the protective layer 2
7 is patterned to form an opening 2 having the same shape as the opening 28.
9 is formed. Thereafter, a sacrificial layer is formed so as to cover the opening 29, and through the respective steps shown in FIGS. 3 to 8, a spiral planar electrode 31 made of an amorphous material having a supercooled liquid region is formed. . Next, as shown in FIG. 13, the assembly shown in FIG. 12 is immersed in an alkaline aqueous solution to perform anisotropic wet etching on the substrate 21 to form an etch pit 32. Subsequently, the substrate electrode 23 and the drive electrode insulating layer 25 are anisotropically wet-etched by immersion in an acid aqueous solution to form an etch pit 33.

Next, as shown in FIG. 14, the assembly shown in FIG. 13 is attached to a jig 35 having a projection 36, and the projection 36 is passed through the etch pits 32 and 33 to lift the flat electrode 31. Then, in this state, the flat electrode 31 is heated to the supercooled liquid region of the amorphous material, and after a predetermined time has elapsed, the heating is stopped and cooled to room temperature to obtain the spiral drive electrode 34. Thus, a final electrostatic microactuator can be obtained.

In this case, the heating means, the temperature rising rate, and the holding time can be determined by the same means and under the same conditions as those in the above-mentioned case where the planar electrode is three-dimensionally deformed by its own weight. Further, as for an amorphous material or a substrate material having a supercooled liquid region, the same material as in the case where “the planar electrode is three-dimensionally deformed by its own weight” can be used.

(Method of Three-dimensionally Deforming Planar Electrode by External Electrostatic Force) FIGS. 15 and 16 show steps in the case of forming a drive electrode by three-dimensionally deforming a planar electrode by an external electrostatic force. FIG. First, the substrate electrode insulating layer 4 is formed on the substrate 41 according to the steps shown in FIGS.
2, a substrate electrode 43, a drive electrode insulating layer 45, and a spiral flat electrode 51 made of an amorphous material having a supercooled liquid region.
Is formed in the same manner as in the case where the planar electrode is three-dimensionally deformed by its own weight.

Thereafter, as shown in FIG. 15, conductive posts 47-1 and 47-2 are provided so that one end is in contact with the substrate electrode insulating layer 42 and the plane electrode 51, and furthermore, the conductive posts 47-1 are provided. And an opposing electrode 49 is formed at the other end of 47-2 via an insulating portion 48. Then, a predetermined voltage is applied from the external power supply 50 to between the conductive column 47-1 in contact with the plane electrode 51 and the counter electrode 49. Further, the planar electrode 51 is heated to a supercooled liquid region of the amorphous material.
Then, since the planar electrode 51 shows a viscous flow and softens, the planar electrode 51 is attracted to the opposing electrode 49 by an electrostatic force generated between the opposing electrode 49 and the planar electrode 51. Then, after cooling for a predetermined time, a spiral drive electrode 54 as shown in FIG. 16 is formed, and a final electrostatic microactuator is formed.

As the heating means, the same means as described in the above-mentioned "when the planar electrode is three-dimensionally deformed by its own weight" can be used. In order to prevent the planar electrode 51 from being excessively deformed, it is preferable that the applied voltage after the planar electrode starts to be deformed be ２〜 to 1/10 of the above voltage.

FIGS. 17 and 18 are a sectional view and a plan view showing another embodiment of the counter electrode. In FIGS. 17 and 18, the insulator 4 is connected to the other ends of the conductive columns 47-1 and 47-2.
8, an insulating plate 55 is formed, and a partial electrode 56 is formed at the center of the insulating plate 55. That is, FIG.
In (18) and (18), the counter electrode is formed from the insulating plate 51 and the partial electrode 52. As a result, the electrostatic force acts only on the central portion of the plane electrode 51, so that the electrostatic force is optimized, and it is not necessary to reduce the applied voltage value after the plane electrode starts deforming as described above.

When the flat electrode 51 is heated by infrared rays, it is necessary to form the insulating plate 55 from an infrared-permeable material such as silicon or silicon oxide.
Further, regarding the amorphous material having a supercooled liquid region constituting the plane electrode 51 and the driving electrode 54 and the semiconductor material constituting the substrate 41, the above-mentioned “Case where the plane electrode is three-dimensionally deformed by its own weight. ] Can be used.

FIGS. 19 and 20 are cross-sectional views showing each step of forming a drive electrode by three-dimensionally deforming a plane electrode by a magnetic external force. It is. First, a substrate electrode insulating layer 62, a substrate electrode 63, a drive electrode insulating layer 65, and a spiral planar electrode made of an amorphous material having a supercooled liquid region are formed on a substrate 61 in accordance with the steps shown in FIGS. 71 is “When the plane electrode is three-dimensionally deformed by its own weight”
It is formed in the same manner as described above.

The assembly formed as described above is set on the setting table 72. Next, as shown in FIG. 19, a magnetic layer 67 is formed on the flat electrode 71 by a sputtering method or the like to a thickness of 1 to 100 μm and then patterned to form a magnetic body 67. Next, a permanent magnet 68 is provided so as to face the magnetic body 67. The permanent magnet 68 is water-cooled by a water cooling tube 69. Then, the assembly is connected to a vacuum infrared heating device (not shown).
And irradiating the assembly with infrared rays from the opening 73 of the installation table 72 and the upper surface of the assembly under the same conditions as in the case of “three-dimensionally deforming the flat electrode by the weight of the flat electrode”. Heat to the supercooled liquid region of the amorphous material.

Then, the flat electrode 71 shows a viscous flow and softens, and is attracted in the direction of the permanent magnet 68 by a magnetic force generated between the magnetic body 67 and the permanent magnet 68. Since the permanent magnet 68 is water-cooled, when the deformed planar electrode 71 comes into contact with the permanent magnet 68, it is immediately cooled and the deformation is completed. Then, the spiral drive electrode 7 as shown in FIG.
4 and the final electrostatic microactuator is formed.

In the embodiment shown in FIGS. 19 and 20, the flat electrode is heated using infrared rays. However, the heating can be performed using resistance heating or induction heating. In addition, as for the amorphous material having the supercooled liquid region and the semiconductor material constituting the substrate, the same materials as those in the above-mentioned “when the planar electrode is three-dimensionally deformed by its own weight” can be used. . Further, in this embodiment, the permanent magnet is water-cooled, but if the Curie point of the permanent magnet is sufficiently higher than the above-mentioned heating temperature, it is not necessary to cool the permanent magnet.

FIG. 2 shows a case where the plane electrode is three-dimensionally deformed by the stress generated at the interface with the internal stress layer or the thermal expansion layer.
1 to 24 are a cross-sectional view and a plan view showing each step of forming a drive electrode by three-dimensionally deforming a plane electrode by a stress generated at an interface with an internal stress layer. First, in accordance with the steps shown in FIGS. 1 to 6, a substrate electrode insulating layer 82, a substrate electrode 83, a drive electrode insulating layer 85, and a spiral planar electrode made of an amorphous material having a supercooled liquid region are formed on a substrate 81. 91 is formed in the same manner as in the case where the planar electrode is three-dimensionally deformed by its own weight.

Next, as shown in FIG. 21, a polymer layer 87 is formed to a thickness of 1 to 200 μm by spin coating or the like. Next, a mask layer 88 is formed to a thickness of 0.01 to 1 μm by means of a sputtering method and wet etching. Next, the polymer layer 87 is dry-etched by reactive ion etching or the like via the mask layer 88 to form an uneven pattern. Then, an internal stress layer 8 is formed on the uneven pattern by sputtering or the like.
9 is formed. Thereafter, the polymer layer 87 is removed using an acid solution to obtain an assembly as shown in FIG. FIG.
23 is a plan view of the assembly shown in FIG. 22 when viewed from above. The substrate electrode pad portion 84 is formed on the substrate electrode 83 in the same manner as in the case where the planar electrode is three-dimensionally deformed by its own weight. Further, the internal stress layers 89 are formed on the planar electrodes 91 at substantially equal intervals.

Next, after removing the sacrificial layer 86 according to the steps shown in FIGS. 7 and 8, the flat electrode 91 is heated to the supercooled liquid region of the amorphous material by the above-described infrared heating, resistance heating, induction heating or the like. I do. Then, as shown in FIG. 24, the plane electrode 91 is lifted by the stress generated at the interface between the plane electrode 83 and the internal stress layer 89. When heating is completed after a predetermined time has elapsed, the spiral drive electrode 94
Is formed.

The internal stress layer 89 needs to have a compressive or tensile internal stress, and its size is 1M.
Pa to 3 GPa, more preferably 10 M
The pressure is preferably Pa to 100 MPa. This makes it possible to optimize the deformation speed from the flat electrode 91 to the drive electrode 94, and to facilitate controllability.
Such an internal stress layer can be obtained by a direct current sputtering method, such as a chromium layer formed with an argon atmosphere pressure of 0.3 Pa and a sputtering voltage of 500 V during sputtering.

For the same reason, the thickness of the internal stress layer 89 is preferably 1/100 or less of the thickness of the plane electrode 91, and more preferably 10 to 200 nm. As the amorphous material having the supercooled liquid region, the semiconductor material constituting the substrate, and the like, the same materials as those in the above-mentioned "when the plane electrode is three-dimensionally deformed by its own weight" can be used.

Although the case where the internal stress layer is used has been described with reference to FIGS. 21 to 24, a thermal expansion layer having a different thermal expansion coefficient from that of the plane electrode can be used instead of the internal stress layer. In this case, when the assembly as shown in FIG. 22 in which the thermal expansion layer is formed in place of the internal stress layer 89 is heated so that the temperature of the planar electrode 91 reaches the supercooled liquid region, the thermal expansion layer and the planar electrode are connected. A stress is generated at the interface between the two due to the thermal expansion difference. On the other hand, since the planar electrode 91 is viscous and softened, the planar electrode 91 is easily deformed by the stress, and a spiral drive electrode similar to that shown in FIG. 24 is formed.

Such a thermal expansion layer has a thermal expansion coefficient at 200 ° C. or more of 5 × 10 ⁻⁶ or less, or 15 × 10 ⁻⁶ or less.
It is preferably in the range of 40 × 10 ⁻⁶ . Thereby, the deformation speed of the planar electrode can be optimized, and the controllability in forming the drive electrode is improved. Further, for the same reason, the thickness of the thermal expansion layer is one of the thickness of the planar electrode 91.
/ 100 or less, more preferably 10 to 2
It is preferably 00 nm.

Although the present invention has been described in connection with the preferred embodiments with reference to specific examples, the present invention is not limited to the above-described contents, and may be modified without departing from the scope of the present invention. , Any deformation or change is possible.

[0042]

According to the method of manufacturing an electrostatic microactuator of the present invention, a spiral drive electrode having a high elastic limit and capable of moving up and down in a direction perpendicular to the substrate surface can be easily formed. Can be. Therefore, an electrostatic microactuator is formed from the substrate, the substrate electrode insulating layer, the substrate electrode, the drive electrode insulating layer, and the drive electrode, and an object to be driven is attached to the center of the drive electrode to drive the drive electrode. By doing so, the object always receives a driving force in the direction perpendicular to the substrate surface, so that the point at which the driving force is generated does not change during driving of the electrostatic microactuator. Therefore, the size of the electrostatic microactuator can be reduced, and the size of the mounting device can be reduced.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a first step in an example of a method for manufacturing an electrostatic microactuator according to the present invention.

FIG. 2 is a plan view of the step shown in FIG.

FIG. 3 is a sectional view showing a step after the step shown in FIGS. 1 and 2;

FIG. 4 is a sectional view showing a step after the step shown in FIG. 3;

FIG. 5 is a sectional view showing a step after the step shown in FIG. 4;

FIG. 6 is a plan view of the step shown in FIG. 5;

FIG. 7 is a sectional view showing a step after the step shown in FIGS. 5 and 6;

FIG. 8 is a sectional view showing a step after the step shown in FIG. 7;

FIG. 9 is a sectional view showing a step after the step shown in FIG. 8;

FIG. 10 is a sectional view showing a step after the step shown in FIG. 9;

FIG. 11 is a sectional view showing a step after the step shown in FIG. 10;

FIG. 12 is a cross-sectional view showing an initial step in another example of the method for manufacturing an electrostatic microactuator of the present invention.

FIG. 13 is a sectional view showing a step after the step shown in FIG. 12;

FIG. 14 is a cross-sectional view showing a step after the step shown in FIG. 13;

FIG. 15 is a cross-sectional view showing a first step in another example of the method for manufacturing an electrostatic microactuator of the present invention.

16 is a cross-sectional view showing a step that follows the step shown in FIG.

FIG. 17 is a cross-sectional view showing another example of the counter electrode.

18 is a plan view of the counter electrode shown in FIG.

FIG. 19 is a cross-sectional view showing an initial step in another example of the method for manufacturing an electrostatic microactuator of the present invention.

FIG. 20 is a cross-sectional view showing a step that follows the step shown in FIG. 19;

FIG. 21 is a cross-sectional view showing a first step in one example of the method for manufacturing an electrostatic microactuator of the present invention.

FIG. 22 is a sectional view showing a step after the step shown in FIG. 21;

FIG. 23 is a plan view of the step shown in FIG. 22;

FIG. 24 is a sectional view showing a step after the step shown in FIGS. 22 and 23;

[Explanation of symbols]

 1, 21, 41, 61, 81 Substrate 2, 22, 42, 62, 82 Substrate electrode insulating layer 3, 23, 43, 63, 83 Substrate electrode 4 Substrate electrode pad 5, 25, 45, 65, 85 Drive electrode Insulating layer 6, 86 Sacrificial layer 7, 87 Polymer layer 8, 26, 88 Mask layer 9 Thin film 10 Planar electrode pattern 11, 31, 51, 71, 91 Planar electrode 12 Installation jig 13, 28, 29, 30, 73 Opening 14, 34, 54, 74, 94 Driving electrode 27 Protective layer 32, 33 Etch pit 35 Jig 36 Projection 47-1, 47-2 Conductive support 48 Insulating part 49 Counter electrode 50 External power supply 55 Insulating plate 56 Partial electrode 67 Magnetic body 68 Permanent magnet 69 Water cooling tube 72 Installation table 89 Internal stress layer

────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-5-318012 (JP, A) JP-A-9-126833 (JP, A) JP-A-9-237906 (JP, A) JP-A 8- 129875 (JP, A) JP-A-7-240033 (JP, A) JP-A-6-339284 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) B81C 1/00 B66F 1 / 00 B81B 3/00

Claims (15)

(57) [Claims] A step of forming a thin film made of an amorphous material having a supercooled liquid region on a predetermined substrate; a step of forming a spiral flat electrode by etching the thin film; Manufacturing the electrostatic micro-actuator by heating the substrate to a supercooled liquid region of the amorphous material and three-dimensionally deforming the planar electrode to form a spiral drive electrode. Method. 2. The method according to claim 1, wherein the planar electrode is formed by etching the thin film to form a predetermined pattern, and then heating the pattern in a supercooled liquid region of the amorphous material. Item 2. A method for manufacturing an electrostatic microactuator according to Item 1. 3. The glass transition temperature of the supercooled liquid region is 2
The method for manufacturing an electrostatic microactuator according to claim 1, wherein the temperature is in a range of 00 to 600 ° C., and a temperature width of the supercooled liquid region is 20 ° C. or more. 4. The method according to claim 1, wherein the driving electrode is formed by three-dimensionally deforming the plane electrode by its own weight. . 5. The electrostatic microactuator according to claim 1, wherein the driving electrode is formed by deforming the planar electrode three-dimensionally by a mechanical external force. Production method. 6. The electrostatic microactuator according to claim 1, wherein the driving electrode is formed by three-dimensionally deforming the plane electrode by an external electrostatic force. Manufacturing method. 7. The flat electrode and the counter electrode are formed by forming a counter electrode by facing the flat electrode, and applying a predetermined voltage between the flat electrode and the counter electrode. 7. The method according to claim 6, wherein the planar electrode is formed by deforming the planar electrode three-dimensionally by an electrostatic force generated between the electrostatic microactuator and the electrostatic microactuator. 8. The electrostatic microactuator according to claim 1, wherein the drive electrode is formed by deforming the plane electrode three-dimensionally by a magnetic external force. Production method. 9. The driving electrode forms a magnetic body on the plane electrode, forms an opposing magnet by opposing the plane electrode, and uses a magnetic force generated between the magnetic body and the opposing magnet. 9. The method of claim 8, wherein the planar electrode is formed by deforming the planar electrode three-dimensionally. 10. The drive electrode forms an internal stress layer having an internal stress adjacent to the plane electrode,
Due to the internal stress difference between the plane electrode and the internal stress layer,
The electrostatic microactuator according to any one of claims 1 to 3, wherein the planar electrode is formed by deforming the planar electrode three-dimensionally by a stress generated at an interface between the planar electrode and the internal stress layer. Production method. 11. The internal stress layer has a compressive or tensile internal stress, and the absolute value of the internal stress is 1 MPa to 3 MPa.
The method of manufacturing an electrostatic microactuator according to claim 10, wherein the method is GPa. 12. The method according to claim 10, wherein the thickness of the internal stress layer is 1/100 or less of the thickness of the planar electrode. 13. The driving electrode forms a thermal expansion layer having a thermal expansion coefficient different from that of the amorphous material so as to be adjacent to the plane electrode, and the driving electrode and the plane electrode are formed by a thermal expansion difference between the plane electrode and the thermal expansion layer. 4. The method of claim 1, wherein the planar electrode is formed by deforming the planar electrode three-dimensionally by a stress generated at an interface with the thermal expansion layer. 5. 14. The method according to claim 1, wherein the thermal expansion layer is heated at a temperature of 200 ° C. or more.
Thermal expansion coefficient is 5 × 10 ^-6Less than or 15 × 10^-6~ 4
0x10^-614. The range of claim 13,
3. The method for manufacturing an electrostatic microactuator according to item 1. 15. The method of claim 13, wherein a thickness of the thermal expansion layer is 1/100 or less of a thickness of the planar electrode.