JP3196836B2 - Integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an integrated circuit device in which a microprocessor or the like is formed by rectangular circuit cells.

[0002]

2. Description of the Related Art At present, various types of integrated circuit devices are used in various types of electronic equipment. For example, an integrated circuit device that executes complicated data processing is known as a microprocessor or the like. When an integrated circuit device of a microprocessor reads data from an externally arranged main memory when executing data processing, it is inefficient to repeatedly read the same data.

Therefore, it is becoming common to connect such a cache memory for temporarily storing data to a microprocessor to improve the processing speed. Such a microprocessor and the cache memory are incorporated in one package. Some circuit modules have been implemented.

Here, such a circuit module will be described below as a conventional example with reference to FIGS. 11 and 12. FIG. FIG. 11 is a schematic plan view showing the internal structure of the circuit module, and FIG. 12 is a schematic plan view showing the arrangement of connection terminals of a microprocessor which is an integrated circuit device.

[0005] A circuit module 1 exemplified here is a circuit module shown in FIG.
As shown in FIG. 1, one microprocessor 2 as an integrated circuit device, eight cache memories 3 as an integrated circuit device, two tag memories 4 as an integrated circuit device,
And these are arranged on one main body substrate 5.

[0006] As shown in FIG. 12, the microprocessor 2 has a substantially square circuit board 6, and a large number of connection terminals 7 are formed on the outer periphery of the circuit board 6.
A semiconductor circuit (not shown) is integrated at the center of the circuit board 6, and this semiconductor circuit is appropriately connected to the connection terminal 7.

[0007] The microprocessor 2 having such a structure is mounted at a substantially central portion of the main body substrate 5, and a cache memory 3 and a tag memory 4 are arranged around the microprocessor 2.
These memories 3 and 4 are appropriately connected to a part of a large number of connection terminals 7 of the microprocessor 2 (surrounded by dotted lines in the drawing), and the memories 3 and 4 are arranged so that the wiring is shortest. Have been.

Each of the memories 3 and 4 has an SRAM (Static Random Access Memory) having a storage capacity of 4 Mbits.
y), and is formed of an integrated circuit on a rectangular circuit board like the microprocessor 2. Further, a large number of connection terminals (not shown) are also formed on the outer peripheral portion of the main body substrate 5, and the microprocessor 2 and the cache memory 3 are connected to the large number of connection terminals.

Since the microprocessor 2 has a cache memory for the primary cache and a tag memory (not shown), the cache memory 3 and the tag memory 4 are formed for the secondary cache. . To determine whether the cache data temporarily stored in the cache memory 3 has been hit, the tag memory 4 temporarily stores the tag data corresponding to the address data.

[0010] The circuit module 1 having the above-described structure includes:
It is used for various data processing as part of an electronic device (not shown). In that case, an external main memory (not shown) is connected to the circuit module 1, various data are read from the main memory, and various processes are executed by the microprocessor 2.

At this time, since it is useless for the microprocessor 2 to repeatedly read the same data from the main memory, the microprocessor 2 temporarily stores various data read from the main memory in the cache memory 3 and stores the data corresponding to the address data. Tag data is temporarily stored in the tag memory 3.

When reading the predetermined data, the microprocessor 2 checks the tag data in the tag memory 3 against the address data in the cache memory 3 and, if they match, reads the stored data from the cache memory 3 as a cache hit. For this reason, in the circuit module 1 described above, the number of times that the microprocessor 2 reads the same data from the external main memory can be reduced, and various data processing can be executed with good efficiency.

Although there are various forms of a method of manufacturing an integrated circuit device such as the microprocessor 2 described above, various circuit cells, which are now called standard cells, are designed in advance and this circuit cell is manufactured. It has been practiced to easily design an integrated circuit device by combining cells as desired.

[0014]

In the circuit module 1 described above, the microprocessor 2 can temporarily store various data read from an external main memory and used repeatedly in the cache memory 3, so that various data processing can be performed with good efficiency. Can be run with

However, since the above-described circuit module 1 has the microprocessor 2, cache memory 3, and tag memory 4, which are separate integrated circuit devices, mounted on the main body substrate 5, the circuit module 1 is entirely large and the productivity is low. Not good. In order to reduce the size and improve the productivity, the above-described microprocessor 2, cache memory 3, and tag memory 4 may be formed as one integrated circuit device.

The inventor of the present invention has proposed that a cache memory and a tag memory are formed in a small size using a DRAM to form a circuit cell corresponding to a standard cell, and combined with a circuit cell of a microprocessor to form one integrated circuit device. did. In this case, if a circuit cell in which the connection terminal 7 is omitted from the above-described microprocessor 2 is used as a circuit cell, an integrated circuit device can be designed with good efficiency similarly to the circuit design using a standard cell.

In the case of the microprocessor 2 described above, the connection terminals 7 connected to the cache memory 3 are concentrated around the upper edge and the lower edge in the drawing, so that the integrated circuit device illustrated in FIG. As in 10, the inventor of the present invention devised that two cache memories 12 and 13 each composed of a circuit cell are individually arranged above and below a microprocessor 11 composed of circuit cells.

However, the microprocessor 11, which executes data processing at high speed, generates a lot of noise.
Since the cache memories 12 and 13 made of AM have low resistance to noise, if the cache memories 12 and 13 are adjacent to the microprocessor 11 as described above, noise interference becomes a problem. In order to solve this, the present applicant has proposed that the microprocessor 11 and the cache memory 12 are separated from each other and separated by a diffusion layer, but this is not preferable because the size of the integrated circuit device 10 is increased.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to provide an integrated circuit device which is small in size and in which noise interference between a microprocessor and a DRAM is solved. I do.

[0020]

[0021]

[0022]

An integrated circuit device according to the present invention comprises a rectangular circuit board, a large number of external connection terminals formed on an outer peripheral portion of the circuit board, and a rectangular circuit cell. DRAM formed at the end of the
And a second DRA formed of a rectangular circuit cell and formed at an end of the circuit board opposite to the first DRAM.
M, a microprocessor formed of a rectangular circuit cell and formed at an end of the circuit board in a gap between the first DRAM and the second DRAM, and the first DRAM formed of a rectangular circuit cell And a third DRAM formed at an end of the circuit board opposite to the microprocessor in a gap between the second DRAM and a third DRAM formed on the circuit board at a position of an outer peripheral portion of the microprocessor. A plurality of processor protection circuits respectively connected to the microprocessor, a part of the plurality of external connection terminals arranged at a position passing at least a part of a surface of the first to third DRAMs, and a plurality of A plurality of processor connection wires individually connecting the processor protection circuit,
A plurality of DRAMs formed on the circuit board at positions of gaps between the first DRAM, the second DRAM, the third DRAM, and the processor protection circuit and connected to the first to third DRAMs A memory protection circuit, which is arranged at a position passing at least a part of the surface of the first to third DRAMs, and individually connects a part of a large number of the external connection terminals and a plurality of the memory protection circuits; And a plurality of memory connection wirings.

[0023] Thus, the integrated circuit device of the present invention, since the DRAM with many external connection microprocessor terminal is connected appropriately via a processor protection circuit are connected through a memory protection circuit, external static electricity Even if an abnormally high voltage or the like flows into the external connection terminal, the microprocessor and the DRAM are not destroyed. Although the processor protection circuit and the memory protection circuit as described above are essential elements of the integrated circuit device, since the processor protection circuit and the memory protection circuit are arranged in the gap between the microprocessor and the DRAM, the microprocessor and the DRAM are connected to the processor protection circuit and the memory protection circuit. It is separated by the width of the circuit.

In the above integrated circuit device, the circuit board is grounded, and the processor protection circuit and the memory protection circuit are provided with ground terminals separated from each other. A diffusion layer interposed as a parasitic resistance between the ground terminal of the protection circuit and the ground terminal of the memory protection circuit may be formed on the circuit board.

In this case, the processor protection circuit and the memory protection circuit individually discharge an abnormally high voltage current flowing from the outside to the circuit board from each of the separated ground terminals. Although the processor protection circuit and the memory protection circuit are adjacent to each other, since the ground terminals are separated, mutual interference of noise is reduced. However, since the circuit board is also grounded, even if the ground terminals of the processor protection circuit and the memory protection circuit are formed separately, they cannot be electrically separated. However, since the diffusion layer is interposed as a parasitic resistance at the ground terminal between the processor protection circuit and the memory protection circuit, mutual interference of noise between the processor protection circuit and the memory protection circuit is reduced.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. However, the same portions as those in the conventional example described above with reference to the present embodiment are denoted by the same names, and detailed description is omitted. Also, in the present embodiment, directions such as up, down, left, and right are used, but this is used for convenience for simplifying the description, and does not limit the direction at the time of manufacturing or using the actual device. Absent.

1 and 2 are schematic plan views showing the internal structure of the integrated circuit device according to the present embodiment, FIG. 3 is a schematic plan view showing the internal structure of the cache memory, and FIG.
Is a schematic process diagram showing a process of changing the shape of the tag memory, FIG. 5 is an equivalent block diagram showing a relationship between the cache memory and the tag memory, FIG. 6 is a block diagram showing a circuit structure of the integrated circuit device, 7 is a circuit diagram showing an equivalent circuit of the processor protection circuit and the memory protection circuit, FIG. 8 shows the internal structure of the memory protection circuit, (a) is a schematic vertical sectional side view of a main part, and (b) is a circuit. FIG. 9 shows the internal structure of the processor protection circuit, FIG. 9A is a schematic vertical sectional side view of a main part, FIG. 9B is a plan view of the circuit board, and FIG. 10 is a processor protection circuit and memory protection. FIG. 3 is a circuit diagram illustrating an equivalent circuit to a circuit.

As shown in FIGS. 1 and 2, the integrated circuit device 100 of this embodiment includes a single circuit board 101, on which a microprocessor 102 is formed as a circuit cell. I have. More specifically, at the positions of the upper end and the lower end of the circuit board 101, one first cache memory 103 and one second cache memory 104 are formed of DRAM circuit cells corresponding to standard cells.

The first and second cache memories 103,
At the left end of the circuit board 101 at the position of the gap 104, a microprocessor 102 composed of circuit cells is formed, and the first and second cache memories 103 and 104 are formed.
A tag memory 105 including circuit cells is formed at the right end of the circuit board 101 at the position of the gap.

In the integrated circuit device 100 according to the present embodiment, each of the four circuit cells described above is formed in a rectangular shape, and the total length in the left-right direction as the x direction and the total length in the vertical direction as the y direction. And “a = 14 (mm), b = 1.5 (mm), c = 13
(mm), d = 6 (mm) ".

Since the microprocessor 102 is composed of circuit cells having substantially the same structure as the existing microprocessor 2 as described above, its outer shape is fixedly determined in advance. The total length is "14,11 (mm)", which is approximately a, and the total length in the vertical direction, which is the y direction, is approximately c.
"13.05 (mm)".

First and second cache memories 103 and 104
Is fixedly formed in an outer shape corresponding to a row address and a column address, as shown in FIGS. 2B and 3, and the total length in the left-right direction is substantially equal to the column address.
(a + b) = “15.80 (mm)”, and the total length in the vertical direction is “5.50 (mm)” which is substantially d corresponding to the row address.

More specifically, the first and second cache memories 103 and 104 include six memory cell arrays 111 having a storage capacity of “5.75 Mb”, three X decoders 112, six Y decoders 113, and an address buffer. Peripheral circuit 1
The memory cell array 111 includes a number of memory cells 115, a sense amplifier 116, and a word driver 117.

Since the first and second cache memories 103 and 104 having the above-described shape are arranged above and below the microprocessor 102, the circuit board 101 has a total length of approximately (a + b) in the left-right direction which is the x direction. A certain “16.48 (mm)”
The vertical length of the y-direction is approximately 24.90 (mm), which is approximately (c + 2d).

Therefore, it is inevitable that the microprocessor 10
2, a “b × c” space is generated on the side of the tag memory 10 arranged as a rectangular circuit cell.
5, as shown in FIGS. 2C and 4C, the total length in the left-right direction is substantially b corresponding to the row address “1.40 (m
m) ”, the total length in the vertical direction is“ 12.80 (mm) ”, which is approximately c corresponding to the column address.

The tag memory 105, like the first and second cache memories 103 and 104 described above, comprises a memory cell array 111, an X decoder 112, a Y decoder 113, and peripheral circuits 114 such as an address buffer.
As shown in (a), originally, the cache memories 103, 1
It is formed into an extreme rectangle corresponding to the same row address and one column address.

However, in the present embodiment, since it is formed in a vertically long rectangle as described above, as shown in FIG. 5, internal wiring (not shown) is used so that a part of the row address becomes a column address. ) Is formed. By using a part of the row address as a column address in this way, as shown in FIG. 4B, the total length in the vertical direction corresponding to the row address is reduced, and the total length in the horizontal direction corresponding to the column address is extended. Therefore, the tag memory 105 is divided into four in the left-right direction and arranged in the up-down direction. ing.

Further, the integrated circuit device 100 of the present embodiment
Has a large number of external connection terminals 106 formed at the positions of the upper and lower edges, which are the outer peripheral portions of the circuit board 101, and the left and right edges of the gap between the first and second cache memories 103 and 104. Terminal 106 is the microprocessor 10
2 and the first and second cache memories 103 and 104 as appropriate.

However, as shown in FIG. 1, a plurality of processor protection circuits 107 are formed on the outer peripheral portion of the microprocessor 102. As shown in FIG. Each of the microprocessors 102 is directly connected to a plurality of connection terminals (not shown) by a wiring 108 and various memories 103 to 10.
5 are connected to a part of many external connection terminals 106 by a plurality of processor connection wirings 109 passing through the surface.

Further, at the position of the gap between the first cache memory 103, the second cache memory 104, the tag memory 105, and the processor protection circuit 107, various memories 10
A plurality of memory protection circuits 11 connected to 3 to 105
0 is formed, and the plurality of memory protection circuits 11
0 is directly connected to a plurality of connection terminals (not shown) of the various memories 103 to 105 by wires 111, and is connected to a plurality of external connection lines by a plurality of memory connection wires 112 passing through the surfaces of the memories 103 to 105. It is connected to a part of the terminal 106.

When the processor protection circuit 107 is expressed by an equivalent circuit, as shown in FIG. 7A, the wirings 108 and 109 are formed by a pair of normally-off transistors 120 and 121.
Are connected to the power supply terminal 122 and the ground terminal 123, and these transistors 120 and 121 perform the punch-through of the excessive voltage by the power supply terminal 122 and the ground terminal 123.
To discharge.

Similarly, when the memory protection circuit 110 is expressed by an equivalent circuit, as shown in FIG. 4B, the wiring 11 is formed by a pair of parasitic diodes 124 and 125 having an excessively large offset.
1 and 112 are connected to the power supply terminal 126 and the ground terminal 127, and these parasitic diodes 124 and 12 are connected.
5 discharges an excessive voltage to the power supply terminal 126 and the ground terminal 127.

The transistors 120 and 121 of the processor protection circuit 107 include source regions 130 and 131, drain regions 132 and 133, and gate electrodes 134 and 135. As shown in FIG. Is formed of a diffusion layer or a laminated film of the circuit board 101 and is adjacent to the memory protection circuit 110.

The portion of the memory protection circuit 110 which functions as the parasitic diodes 124 and 125 is actually composed of various diffusion layers 141 to 144 formed on the p-type circuit board 101 as shown in FIG. , And the processor protection circuit 107.

In the configuration described above, the integrated circuit device 100 of the present embodiment can execute various data processing by the microprocessor 102. In this case, the microprocessor 102 reads various data from an external memory (not shown) and uses the data for data processing.
03, 104 and the tag memory 10
5 can temporarily store tag data.

Since the microprocessor 102 can read the cache data temporarily stored in the cache memories 103 and 104 based on the tag data temporarily stored in the tag memory 105 as described above, the same processing data can be externally read. The frequency of repeatedly reading data from the memory can be reduced, and various data processing can be executed with high efficiency.

The microprocessor 102 and the external connection terminal 106 are connected via a processor protection circuit 107, and the cache memories 103 and 104 and the external connection terminal 106 are connected via a memory protection circuit 110. Therefore, even if an abnormal high voltage due to external static electricity flows into the external connection terminal 106, the microprocessor 102 and the cache memories 103 and 104 are not destroyed.

The integrated circuit device 10 according to the present embodiment
At 0, each of the microprocessor 102, the two cache memories 103 and 104, and the tag memory 105 is formed as a rectangular circuit cell corresponding to a standard cell. Are arranged on the circuit board 101. As described above, in order to arrange a plurality of rectangular circuit cells without generating a dead space in the rectangular area, in the integrated circuit device 100 of the present embodiment, the shape of the tag memory 105 is devised.

That is, as described above, as shown in FIG. 2A, the microprocessor 102 composed of circuit cells having substantially the same structure as the existing microprocessor 2 has a total length in the left-right direction of "14, 11 (mm) ", and is formed in a rectangular shape of" 13.05 (mm) "in which the total length in the vertical direction of the y direction is substantially c.

First and second cache memories 103 and 104 having an outer shape corresponding to a row address and a column address.
Is "15.80", as shown in FIG. 3B and FIG. 3, where the total length in the left-right direction is substantially (a + b) corresponding to the column address.
(mm) ", and the overall length in the vertical direction is a rectangle of" 5.50 (mm) "which is substantially d corresponding to the row address.

Since the first and second cache memories 103 and 104 having the above-described shapes are arranged above and below the microprocessor 102, the circuit board 101 has a total length of approximately (a + b) in the left-right direction which is the x direction. A certain “16.48 (mm)”
It is formed in a vertically long rectangle of "24.90 (mm)" whose overall length in the vertical direction which is the y-direction is substantially (c + 2d). A space of “1.5 × 13 (mm)” is generated.

However, the cache memory 103,
When the tag memory 105 is formed as a rectangular circuit cell corresponding to the row address of the cache memory 104, the total length in the vertical direction is reduced as shown in FIG.
The total length in the left-right direction is the same as a rectangle of “4.2 × 5.5 (mm)” corresponding to one column address.

However, the tag memory 10 having such a shape is used.
5 cannot be arranged in the above-mentioned “1.5 × 13 (mm)” space, and as shown in FIG. 4B, a part of the row address of the tag memory 105 is used as a column address to shorten the overall length in the vertical direction. After extending the entire length in the left-right direction, the tag memory 105 is divided into a plurality of pieces in the left-right direction and arranged in the up-down direction as shown in FIG.

Therefore, the integrated circuit device 1 according to the present embodiment
In FIG. 00, the tag memory 105 is formed in a long rectangular shape with a short side of “1.4 (mm)” in the horizontal direction and “12.8 (mm)” in the vertical direction. Since it is arranged without waste in the space of “1.5 × 13 (mm)”, the whole is formed in a rectangular shape without generating a dead space.

In addition, the integrated circuit device 10 of the present embodiment
In the case of 0, since each of the first cache memory 103, the second cache memory 104, and the tag memory 105 is composed of a DRAM, the area occupied by these memories 103 to 105 is reduced, and the whole is favorably miniaturized. ing.

As described above, each memory 1 composed of a DRAM
03 to the memory 105 have low resistance to noise, and the microprocessor 102 that executes high-speed data processing tends to generate noise. However, in the integrated circuit device 100 of the present embodiment, the microprocessor 102 and each of the memories 103 to 105 include the processor / memory protection circuit 10
7, the microprocessor 102 and the memories 103 to 105 are separated from each other without generating a dead space, thereby reducing noise mutual interference.

Furthermore, since the processor protection circuit 107 and the memory protection circuit 110 are adjacent to each other as described above, the ground terminals 123 and 127 are separated to prevent mutual interference of noise. However, since the p-type circuit board 101 made of silicon is also grounded, even if the grounding terminals 123 and 127 are formed separately, they cannot be electrically separated.

Therefore, the integrated circuit device 10 of the present embodiment
In FIG. 10, a deep n-well diffusion layer 144 is formed at the position of the memory protection circuit 110 as shown in FIG.
A parasitic resistance is interposed between the ground terminals 123 and 127 of the memory protection circuit 110 to reduce mutual interference of noise.

The present invention is not limited to the above-described embodiment, but allows various modifications without departing from the scope of the invention. For example, in the above-described embodiment, various numerical values have been specifically illustrated with reference to a product developed by the inventor, but this does not limit the dimensions and ratio of the integrated circuit device of the present invention.

[0060]

Since the present invention is configured as described above, it has the following effects.

In the integrated circuit device of the present invention, a microprocessor is appropriately connected to a number of external connection terminals via a processor protection circuit and a DRAM is connected via a memory protection circuit. The circuit is located in the gap between the microprocessor and the DRAM, so that even if an abnormally high voltage due to external static electricity flows into the external connection terminal, the microprocessor or the DRAM is not destroyed. Since the microprocessor and the DRAM are separated from each other by changing the arrangement of elements, mutual interference of noise between the microprocessor and the DRAM is prevented without increasing the overall size.

In the above-described integrated circuit device, the processor protection circuit and the memory protection circuit are adjacent but the ground terminals are separated, and the circuit board is grounded. Interference of noise between the processor protection circuit and the memory protection circuit, which cannot be separated electrically, can be reduced satisfactorily because the diffusion layer intervenes as a parasitic resistance at the ground terminal of the memory protection circuit and the memory protection circuit. ing.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing the internal structure of an integrated circuit device according to the present embodiment.

FIG. 2 is a schematic plan view showing the internal structure of the integrated circuit device according to the present embodiment.

FIG. 3 is a schematic plan view showing the internal structure of the cache memory.

FIG. 4 is a schematic process diagram showing a process of changing the shape of the tag memory.

FIG. 5 is an equivalent block diagram showing a relationship between a cache memory and a tag memory.

FIG. 6 is a block diagram showing a circuit structure of the integrated circuit device.

FIG. 7 is a circuit diagram showing an equivalent circuit of a processor protection circuit and a memory protection circuit.

8A and 8B show an internal structure of the memory protection circuit, FIG. 8A is a schematic vertical sectional side view of a main part, and FIG. 8B is a plan view of a circuit board.

9A and 9B show an internal structure of a processor protection circuit, wherein FIG. 9A is a schematic vertical sectional side view of a main part, and FIG. 9B is a plan view of a circuit board.

FIG. 10 is a circuit diagram showing an equivalent circuit of a processor protection circuit and a memory protection circuit.

FIG. 11 is a schematic plan view showing the internal structure of the circuit module.

FIG. 12 is a schematic plan view showing an arrangement of connection terminals of a microprocessor which is an integrated circuit device.

FIG. 13 is a schematic plan view showing the internal structure of an unknown prior art integrated circuit device created by the present inventors.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Integrated circuit device 101 Circuit board 102 Microprocessor 103 First cache memory 104 Second cache memory 105 Tag memory 106 External connection terminal 107 Processor protection circuit 110 Memory protection circuit

──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. ⁷ identification code FI H01L 27/108 (58) Investigation field (Int.Cl. ⁷ , DB name) H01L 27/10 H01L 21/822 H01L 21/8242 H01L 27/04 H01L 27/108 G06F 15/78 510

Claims (2)

(57) [Claims] 1. A rectangular circuit board, a number of external connection terminals formed on an outer peripheral portion of the circuit board, and a first DRAM formed of a rectangular circuit cell and formed at an end of the circuit board (Dynamic Random Access Memory)
And the first DR of the circuit board, comprising a rectangular circuit cell
A second DRAM formed at the end opposite to the AM
A microprocessor formed of a rectangular circuit cell and formed at an end of the circuit board in a gap between the first DRAM and the second DRAM; and a first DRAM formed of a rectangular circuit cell. A third DRAM formed at an end of the circuit board opposite to the microprocessor in a gap with the second DRAM;
A plurality of processor protection circuits formed on the circuit board at a position of an outer peripheral portion of the microprocessor and connected to the microprocessor, respectively, and passing at least a part of a surface of the first to third DRAMs A plurality of processor connection wirings which are arranged at positions that individually connect a part of the plurality of external connection terminals and a plurality of the processor protection circuits, respectively, the first DRAM, the second DRAM, A plurality of memory protection circuits formed on the circuit board at a position between the third DRAM and the processor protection circuit and connected to the first to third DRAMs; and the first to third DRAMs. A plurality of external connection terminals and a plurality of memory protection circuits individually connected to a plurality of the memory protection circuits. An integrated circuit device comprising: a memory connection wiring. 2. The circuit board is grounded, the processor protection circuit and the memory protection circuit are provided with ground terminals separated from each other, and the ground terminal of the processor protection circuit and the memory protection are provided. 2. The integrated circuit device according to claim 1, wherein a diffusion layer interposed as a parasitic resistance between the circuit board and a ground terminal is formed on the circuit board.