JP3169759B2 - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JP3169759B2 JP3169759B2 JP33495193A JP33495193A JP3169759B2 JP 3169759 B2 JP3169759 B2 JP 3169759B2 JP 33495193 A JP33495193 A JP 33495193A JP 33495193 A JP33495193 A JP 33495193A JP 3169759 B2 JP3169759 B2 JP 3169759B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cleaning
- etching
- plasma
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、フッ素を含むガスプラ
ズマによりクリーニングを行い、クリーニング後、塩素
ガス（Ｃｌ2），臭化水素ガス（ＨＢｒ）の単独ガスあ
るいは混合ガスをエッチングガスとして用いてシリコ
ン、多結晶シリコン、シリサイドのエッチングを行うエ
ッチング装置に係り、特にクリーニング後のシリコン及
び下地膜である酸化膜（ＳｉＯ2）のエッチング速度の
変化を抑制しウエハ間の均一性を向上させるのに好適な
プラズマエッチング方法に関するものである。BACKGROUND OF THE INVENTION This invention performs cleaning by gas plasma containing fluorine, after cleaning, chlorine gas (Cl 2), using a single gas or a mixed gas of hydrogen bromide gas (HBr) as the etching gas The present invention relates to an etching apparatus for etching silicon, polycrystalline silicon, and silicide. In particular, it is intended to suppress a change in the etching rate of silicon after cleaning and an oxide film (SiO 2 ) as a base film and improve uniformity between wafers. The present invention relates to a preferred plasma etching method.
【０００２】[0002]
【従来の技術】従来、エッチングを含めたプラズマプロ
セスではウエハの粒子汚染を防止するためにクリーニン
グを行いクリーニング後の処理室内の残留物をなくすた
めにポストクリーニングを行っている。例えば、Ｓ
Ｆ6，ＮＦ3ガスをクリーニングに用いた場合にはＮ2，
Ａｒ，Ｈ2，Ｏ2ガスプラズマがポストクリーニングに用
いられている。2. Description of the Related Art Conventionally, in a plasma process including etching, cleaning is performed to prevent particle contamination of a wafer, and post-cleaning is performed to eliminate residues in a processing chamber after cleaning. For example, S
When F 6 or NF 3 gas is used for cleaning, N 2 ,
Ar, H 2 , and O 2 gas plasmas are used for post cleaning.
【０００３】なお、本技術に関連するものとして例え
ば、文献：平塚豊著，洗浄設計Ｐ４１−５３，１９９
２．Ｓｕｍｍｅｒが挙げられる。As related to the present technology, for example, literature: Yutaka Hiratsuka, Cleaning Design P41-53, 199
2. Summer.
【０００４】[0004]
【発明が解決しようとする課題】従来のエッチング方法
では、クリーニング後の処理室内の残留物のエッチング
特性に及ぼす影響について考慮がされておらず、クリー
ニング後処理枚数とともにシリコン及び下地膜の酸化膜
のエッチング速度が減少し、下地酸化膜の残膜が変動す
るという問題点があった。In the conventional etching method, no consideration is given to the effect of the residue in the processing chamber on the etching characteristics after cleaning. There is a problem that the etching rate decreases and the remaining film of the base oxide film fluctuates.
【０００５】本発明の目的は、クリーニング後のシリコ
ン及び酸化膜のエッチング速度の減少を抑制し、下地酸
化膜の残膜の変動を防止し、良好なウエハ間の均一性が
得られるエッチング方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an etching method capable of suppressing a decrease in the etching rate of silicon and an oxide film after cleaning, preventing a change in a remaining film of a base oxide film, and obtaining good uniformity between wafers. To provide.
【０００６】[0006]
【課題を解決するための手段】上記目的を解決するため
に、クリーニング後Ｃｌ2ガス，ＨＢｒガスのプラズマ
でシーズニングを行い、クリーニング後の処理室内の残
留物の影響を減少させようとしたものである。In order to solve the above-mentioned object, after cleaning, seasoning is performed with plasma of Cl 2 gas and HBr gas to reduce the influence of residues in the processing chamber after cleaning. is there.
【０００７】[0007]
【作用】図４に、ＳＦ6ガスプラズマでクリーニングを
行った後、Ｃｌ2ガスプラズマでシリコンをエッチング
した場合におけるＳｉＦ（波長４４１ｎｍ）の発光スペ
クトルの処理枚数による変化を示す。シリコンとフッ素
の反応によって生成するＳｉＦの発光スペクトルの強度
は処理枚数とともに減少しほぼ一定となる。このことか
らフッ素を含むガスによるクリーニング後、処理室内に
はフッ素が残留していることが分かった。図５，図６
に、Ｃｌ2ガスにＳＦ6ガスを添加した場合のＳｉＦの発
光スペクトルとシリコン及び酸化膜のエッチング速度の
変化を示す。図５，図６に示すようにＳＦ6の添加量の
増加とともにシリコン及び酸化膜のエッチング速度は増
加する。また、ＳＦ6の添加量の増加とともにＳｉＦ
（波長４４１ｎｍ）の発光スペクトルの強度は増加す
る。このことから残留フッ素によりシリコン及び酸化膜
のエッチング速度は変動し、残留フッ素の減少とともに
シリコン及び酸化膜のエッチング速度が低下することを
見出した。したがって、クリーニングの後残留フッ素の
除去のためＨＢｒ，Ｃｌ2ガスプラズマでシーズニング
を行い、ＳｉＦの発光スペクトルの強度の時間変化が一
定値以下になった時点でシーズニングを終了しエッチン
グを開始することによりシリコン及び酸化膜のエッチン
グ速度の変動を抑制できる。FIG. 4 shows a change in the emission spectrum of SiF (wavelength: 441 nm) depending on the number of processed wafers when silicon is etched with Cl 2 gas plasma after cleaning with SF 6 gas plasma. The intensity of the emission spectrum of SiF generated by the reaction between silicon and fluorine decreases with the number of processed wafers and becomes substantially constant. From this, it was found that fluorine remained in the processing chamber after cleaning with a gas containing fluorine. 5 and 6
2 shows the emission spectrum of SiF and the change in the etching rate of silicon and oxide films when SF 6 gas is added to Cl 2 gas. As shown in FIGS. 5 and 6, the etching rate of the silicon and oxide films increases as the amount of added SF 6 increases. Also, as the amount of SF 6 added increases, SiF
The intensity of the emission spectrum (at a wavelength of 441 nm) increases. From this fact, it has been found that the etching rate of the silicon and the oxide film fluctuates due to the residual fluorine, and the etching rate of the silicon and the oxide film decreases as the residual fluorine decreases. Therefore, after cleaning, seasoning is performed with HBr and Cl 2 gas plasma to remove residual fluorine, and when the time change of the intensity of the emission spectrum of SiF becomes a certain value or less, the seasoning is terminated and etching is started. Variations in the etching rate of the silicon and oxide films can be suppressed.
【０００８】[0008]
【実施例】本発明の一実施例を図１により説明する。図
１は、マイクロ波プラズマエッチング装置の概略図を示
したものである。マグネトロン１から発振したマイクロ
波は導波管２を伝播しマイクロ波導入窓３を介して処理
室４に導かれる。磁界発生用直流電源５からソレノイド
コイル６，７に供給される直流電流によって形成される
磁界とマイクロ波電界によってエッチングガス供給装置
８から供給されるクリーニングガス（ＳＦ6），シーズ
ニングガス（Ｃｌ2ガス）及びエッチングガス（Ｃｌ2ガ
ス）はプラズマ化される。ＳＦ6ガスプラズマにより処
理室４のクリーニングが行われる。Ｃｌ2ガスプラズマ
により処理室４のシーズニングが行われる。Ｃｌ2ガス
により載置電極９に載置されているウエハ１０がエッチ
ングされる。クリーニング、エッチング時の圧力は真空
排気装置１１によって制御される。また、ウエハに入射
するイオンのエネルギは載置電極９に高周波電源１２か
ら供給される高周波電力によって制御される。図２、図
３にシーズニングの有無によるシリコン及び酸化膜のエ
ッチング速度の変化の違いを示す。シーズニングはＣｌ
2ガスプラズマにより行い、ＳｉＦの発光スペクトルを
１０秒毎にモニタし時間ｔｎと時間ｔｎ‐1に測定した
スペクトルの発光強度比が１±０．００２になった時点
でシーズニングを停止した。クリーニング後にシーズニ
ングを行うことによりクリーニング時に生成されるフッ
素の残留の影響を抑制しエッチング速度の変動を防止で
きる。FIG. 1 shows an embodiment of the present invention. FIG. 1 shows a schematic diagram of a microwave plasma etching apparatus. The microwave oscillated from the magnetron 1 propagates through the waveguide 2 and is guided to the processing chamber 4 through the microwave introduction window 3. A cleaning gas (SF 6 ) and a seasoning gas (Cl 2 gas) supplied from the etching gas supply device 8 by a magnetic field formed by a DC current supplied to the solenoid coils 6 and 7 from the magnetic field generating DC power supply 5 and a microwave electric field. ) And the etching gas (Cl 2 gas) are turned into plasma. The processing chamber 4 is cleaned by the SF 6 gas plasma. Seasoning of the processing chamber 4 is performed by Cl 2 gas plasma. The wafer 10 mounted on the mounting electrode 9 is etched by the Cl 2 gas. The pressure at the time of cleaning and etching is controlled by the vacuum exhaust device 11. The energy of ions incident on the wafer is controlled by high-frequency power supplied from the high-frequency power supply 12 to the mounting electrode 9. 2 and 3 show the difference in the change in the etching rate of the silicon and oxide films depending on the presence or absence of seasoning. Seasoning is Cl
Carried out by 2 gas plasma, light emitting intensity ratio of the spectra measured emission spectra of SiF the monitored time tn and time Tn-1 every 10 seconds stops seasoning as it becomes 1 ± 0.002. By performing the seasoning after the cleaning, the influence of the residual fluorine generated during the cleaning can be suppressed, and the fluctuation of the etching rate can be prevented.
【０００９】本発明によれば、クリーニング後の残留フ
ッ素の影響を抑制しシリコン及び酸化膜のエッチング速
度の変動を防止することができる。According to the present invention, it is possible to suppress the influence of residual fluorine after cleaning and prevent fluctuations in the etching rate of silicon and oxide films.
【００１０】本実施例ではマイクロ波プラズマエッチン
グ装置についてその効果を説明したが、他の放電方式例
えばプラズマエッチング（ＰＥ）、ヘリコン、ＴＣＰに
おいても同様な効果が得られる。In this embodiment, the effects of the microwave plasma etching apparatus have been described. However, the same effects can be obtained in other discharge systems such as plasma etching (PE), helicon, and TCP.
【００１１】[0011]
【発明の効果】本発明によれば、クリーニング後の残留
フッ素の影響を抑制しシリコン及び酸化膜のエッチング
速度の変動を防止することができる。According to the present invention, it is possible to suppress the influence of residual fluorine after cleaning and to prevent fluctuations in the etching rates of silicon and oxide films.
【図１】本発明の一実施例のマイクロ波プラズマエッチ
ング装置の構成図である。FIG. 1 is a configuration diagram of a microwave plasma etching apparatus according to one embodiment of the present invention.
【図２】本発明の一実施例での効果を説明するためのＳ
ｉＯ2エッチング速度の処理枚数依存性示す説明図であ
る。FIG. 2 is a diagram illustrating an effect of the embodiment of the present invention.
FIG. 4 is an explanatory diagram showing the dependence of the iO 2 etching rate on the number of processed wafers.
【図３】本発明の一実施例での効果を説明するためのＳ
ｉエッチング速度の処理枚数依存性示す説明図である。FIG. 3 is a diagram illustrating S for explaining the effect of one embodiment of the present invention.
It is explanatory drawing which shows the number-of-processes-dependency of i etching rate.
【図４】ＳｉＦ発光強度の処理枚数依存性示す説明図で
ある。FIG. 4 is an explanatory diagram showing the dependence of the SiF emission intensity on the number of processed wafers.
【図５】ＳｉＦ発光強度のＳＦ6添加量依存性を示す説
明図である。FIG. 5 is an explanatory diagram showing the dependence of the SiF emission intensity on the amount of SF 6 added.
【図６】Ｓｉ及びＳｉＯ2エッチング速度のＳＦ6添加量
依存性を示す説明図である。FIG. 6 is an explanatory diagram showing the dependency of the etching rate of Si and SiO 2 on the addition amount of SF 6 .
【符号の説明】 ２…マイクロ波導入窓、３…放電管、４…ソレノイドコ
イル、６…基板。[Description of References] 2 ... Microwave introduction window, 3 ... Discharge tube, 4 ... Solenoid coil, 6 ... Substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西海 正治 山口県下松市大字東豊井794番地 株式 会社 日立製作所 笠戸工場内 (56)参考文献 特開 平４−242927（ＪＰ，Ａ) 特開 昭61−247031（ＪＰ，Ａ) 特開 平４−199708（ＪＰ，Ａ) 特開 平４−87329（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Shoji Nishikai 794, Higashi-Toyoi, Kazamatsu-shi, Yamaguchi Prefecture Inside the Kasado Plant, Hitachi, Ltd. (56) References JP-A-4-242927 (JP, A) JP-A Sho 61-247031 (JP, A) JP-A-4-199708 (JP, A) JP-A-4-87329 (JP, A)
Claims (2)
ングを行い、クリーニング後、塩素ガス（Ｃｌ2），臭
化水素ガス（ＨＢｒ）の単独ガスあるいは混合ガスをエ
ッチングガスとして用いてシリコン、多結晶シリコン、
シリサイドのエッチングを行うエッチング装置におい
て、前記クリーニング後にＣｌ2ガス，ＨＢｒガスの単
独ガスあるいは混合ガスのプラズマで馴らし放電（シー
ズニングと称す）を行い、ＳｉＦの発光スペクトルをモ
ニターし発光スペクトルの強度の時間変化が一定値以下
になった時点でシーズニングを終了しエッチングを開始
することを特徴とするプラズマエッチング方法。 The cleaning is performed by a gas plasma containing fluorine, and after the cleaning, silicon, polycrystalline silicon, silicon gas, hydrogen gas, hydrogen chloride gas (HBr) or a single gas or a mixed gas thereof is used as an etching gas.
In an etching apparatus for etching silicide, after the cleaning, a discharge (referred to as seasoning) is performed by using plasma of a single gas or a mixed gas of Cl2 gas and HBr gas, and the emission spectrum of SiF is monitored to change the intensity of the emission spectrum with time. A plasma etching method characterized by terminating seasoning and starting etching at a time point when a value becomes equal to or less than a predetermined value.
おいて、フッ素を含むガスが六フッ化硫黄（ＳＦ6），
三フッ化窒素（ＮＦ3），二フッ化キセノン（ＸｅＦ
2），フッ素（Ｆ2），三フッ化塩素（ＣｌＦ3）の単独
ガスあるいは混合ガスであることを特徴とするプラズマ
エッチング方法。 2. The plasma etching method according to claim 1, wherein the gas containing fluorine is sulfur hexafluoride (SF6),
Nitrogen trifluoride (NF3), Xenon difluoride (XeF
2) A plasma etching method comprising a single gas or a mixed gas of fluorine (F2) and chlorine trifluoride (ClF3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33495193A JP3169759B2 (en) | 1993-12-28 | 1993-12-28 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33495193A JP3169759B2 (en) | 1993-12-28 | 1993-12-28 | Plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07201814A JPH07201814A (en) | 1995-08-04 |
| JP3169759B2 true JP3169759B2 (en) | 2001-05-28 |
Family
ID=18283066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33495193A Expired - Fee Related JP3169759B2 (en) | 1993-12-28 | 1993-12-28 | Plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3169759B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5647953A (en) * | 1995-12-22 | 1997-07-15 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma process chamber |
| JP3568749B2 (en) * | 1996-12-17 | 2004-09-22 | 株式会社デンソー | Dry etching method for semiconductor |
| US5868853A (en) * | 1997-06-18 | 1999-02-09 | Taiwan Semiconductor Manufacturing Co. Ltd. | Integrated film etching/chamber cleaning process |
| US6808647B1 (en) * | 1999-07-12 | 2004-10-26 | Applied Materials Inc | Methodologies to reduce process sensitivity to the chamber condition |
| US6790374B1 (en) * | 1999-11-18 | 2004-09-14 | Chartered Semiconductor Manufacturing Ltd. | Plasma etch method for forming plasma etched silicon layer |
| JP4551991B2 (en) * | 2000-06-27 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | Plasma etching method and semiconductor device manufactured using the same |
| US6899785B2 (en) | 2001-11-05 | 2005-05-31 | International Business Machines Corporation | Method of stabilizing oxide etch and chamber performance using seasoning |
| US20040058359A1 (en) * | 2002-05-29 | 2004-03-25 | Lin Mei | Erbin as a negative regulator of Ras-Raf-Erk signaling |
-
1993
- 1993-12-28 JP JP33495193A patent/JP3169759B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07201814A (en) | 1995-08-04 |
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