JP3161438B2 - Active matrix type liquid crystal display device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a thin film transistor
Active matrix type liquid crystal table with (TFT) substrate
The present invention relates to a display device and a manufacturing method thereof. [0002] 2. Description of the Related Art Conventional thin film transistor (TFT) -based
Active matrix type liquid crystal display device with
7 and will be described below. This device is
As shown in FIG. 7B, the TFT substrate 730 and the color
-Twist nematic between filter (CF) substrate 710
It has a structure in which the tick liquid crystal layer 720 is sandwiched. T
Looking at the FT substrate 730, the TFT glass substrate 10
4, a gate electrode 105, a gate insulating film 107, a-S
i layer 109, n + a-Si layer 110, source electrode 112
And the drain electrode 111, the pixel electrode 731 and the passive
The structure has a structure in which a thin film 732 is sequentially formed. Pack
As the passivation film 732,
It is common to use SiN with a thickness of about 300 nm.
is there. On the other hand, looking at the CF substrate 610,
Black matrix 712 and color layer 71 on a substrate 711
3. A structure in which a counter electrode 714 is formed in order. An active matrix type having such a structure
In the liquid crystal display device, the light leakage area B shown in FIG.
The black matrix 712 is provided to shield light from
I needed to go. Therefore, the overlapping
The light transmission area of the liquid crystal display panel
A is small, and the transmittance of the entire device is reduced.
Had a problem. Therefore, the light transmission area must not be enlarged.
FIG. 8 shows a means for increasing the aperture ratio.
The pixel electrode 731, the data line 702 and the gate line 7
01 overlaps, for example, in JP-A-9-15
No. 2625 and the like. An active matrix type having such a structure
In the liquid crystal display device, the pixel electrode 732 and the data line 7
02 and the overlap capacitance of the gate line 701 are reduced.
Therefore, use a material with a low dielectric constant and
An interlayer insulating film 801 needs to be formed. In particular,
For example, on a conventionally used inorganic film made of SiN,
Acrylic or polyimide based low dielectric constant positive type photosensitivity
An interlayer insulating film having a structure in which resin is laminated in a thickness of 2 to 4 μm is used.
Was. FIG. 9 shows a process of manufacturing the interlayer insulating film 801.
And will be described below. Plasma CVD as before
A SiN layer 102 of about 300 nm
Contact hole 113 is formed by
9 (a)). Next, after applying the photosensitive resin,
Patterning is performed by light and alkali development (FIG. 9).
(B) and (c)). Next, the entire surface is irradiated with UV light including i-line.
Shoot to decolorize and clear. Next, by thermal crosslinking reaction
Cure the resin. Next, a transparent electrode such as ITO
And a pixel electrode 732 is patterned.
(FIG. 9D). Finally, at 250 ° C for about 30 minutes
Annealing is performed. With the TFT substrate thus obtained,
Active matrix liquid crystal display devices
Eliminates leak areas and eliminates the need for a black matrix
Therefore, it was possible to increase the aperture ratio. [0008] SUMMARY OF THE INVENTION However, the public
In a known example, each of the SiN layer and the organic film
Layer formation and patterning. Also,
After patterning the organic film by etching,
In order to remove resin residue that causes tact defects,
It is desirable to perform dry etching,
The number of man-hours increased, and there were problems in workability and productivity. So
Here, we can prevent such an increase in man-hours and improve productivity.
In order to improve
And, for example, sequentially forming a SiN layer and an organic film,
Organic film pattern obtained after wet etching
A method of performing dry etching of the base using
available. However, a positive acrylic photosensitive resin
Has poor dry etching resistance and is suitable for dry etching.
Therefore, its surface will be significantly worn away.
Such a method could not be applied. Further, these organic films are applied to a liquid crystal display device.
The light transmittance (especially the light near the i-line)
Good transmittance), but positive
Acrylic resin has low light transmittance near i-line,
In addition, since the heat resistance of the photosensitive group is not sufficient,
The transmittance decreases further by heat treatment such as
There was a problem that required performance could not be obtained. On the other hand, when it comes to polyimide resin,
Although the light etching property is good, the light transmittance
Is still not enough, and improvement in this regard is desirable
Had been. Therefore, an object of the present invention is to provide a pixel electrode and a wiring
TFTs (thin transistors)
High light transmittance and dry etching resistance on substrate
Efficient production of interlayer laminated films with heat resistance and heat resistance
Is to provide a way. Also, such TFT
Active matrix with (thin transistor) substrate
To provide a liquid crystal display device. [0013] Means for Solving the Problems The present inventors have solved the above problems.
Active research to solve the problem, active matrix liquid
Of an organic film that is optimal for application to a TFT substrate
Higher light transmittance and dry etch resistance than conventional materials
And heat-resistant compounds, and
A method that can form an organic film properly and efficiently
Each was examined and the following solutions were obtained. That is, the active matrix type of the present invention
In the manufacturing method of the liquid crystal display device, the pixel electrode and the wiring
Layer of TFT (thin transistor) substrate with overlapping structure
In the step of forming an interlayer insulating film, a small amount of the interlayer insulating film is used.
At least partially form an organic film and pattern it
Using the obtained organic film pattern as a mask
Is performed. This allows manufacturing
The process can be simplified, and the productivity is improved. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is based on the wet etching method.
Film patterning and O_TwoOr CF_FourOr CH
F_ThreeOr SF₆Select at least one type of gas
Patterning of the underlayer by the dry etching method used
Is performed. This simplifies the manufacturing process.
It can be omitted, and the productivity is improved. Also dry
Residual resin after wet etching in the etching process
Existence removal can be performed simultaneously. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is to perform calcination after applying resin.
Forming an organic film by applying a pressure on the surface of the formed organic film.
Apply resist, bake, expose, develop and resist
Forming a resist pattern;
Wet-etch the organic film as a mask to
Obtaining a film pattern, and masking the organic film pattern
Dry etching the base as
The organic film pattern
Completely curing the component.
You. As a result, the manufacturing process can be simplified,
Productivity is improved. Also, in the dry etching process
Simultaneous removal of resin residue after wet etching
be able to. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device uses naphthoquinonedia as a photosensitive agent.
Compound, novolak resin as base resin, solvent
Methylamine solvent or propylene glycol monoa
Using a positive resist using cetyl acetate, and
Tetramethylammonium hydroxide (TMA
H) Develop the resist with a solution and add dimethyl
Of sulfoxide (DMSO) and monoethanolamine
Mixed solution or DMSO and n-methyl 2-pyrrolide (NMP)
With mixed solution with ethyl lactate or butyl acetate
The removal of the resist is performed. This
Resist layer without deteriorating the properties of the organic film.
And removal can be performed efficiently. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is propylene glycol monoacetate.
Benzocyclobutene polymer using tilacetate as solvent
And calcined in the temperature range of 130 to 200 ° C.
And 1,3,5 triisopropylbenzene
Mixed solution with aromatic hydrocarbon or combined with glycol ether
Organic using mixed solution with synthetic isoparaffinic hydrocarbon
Perform wet etching of the film and 240-300 ° C
The re-firing is performed in the above temperature range. This
As a result, the resulting organic film has high light transmittance and
It has etching properties and heat resistance, simplifies the manufacturing process and
It contributes to the improvement of product characteristics. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is a polysilazane compound or a polysilazane compound.
Silazane compounds and acrylic compounds that do not contain photosensitive groups
In the temperature range of 130-200 ° C
Calcinate with hydrofluoric acid buffer or buffered hydrofluoric acid.
Wet etching of organic film using acid solution
Re-baking in a temperature range of 240 to 300 ° C.
And features. As a result, the obtained organic film has high light
Has transmittance, dry etching resistance, and heat resistance.
It contributes to simplifying the manufacturing process and improving the characteristics of products. Especially manufacturing
For process simplification, it has been used as a base
SiN_xNo layer is required, and the effect is great. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is based on the wet etching method.
In the process of patterning the film,
The feature is that the image and the etching of the organic film are performed simultaneously.
You. This further simplifies the manufacturing process. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is to perform calcination after applying resin.
A process of forming an organic film by applying a resist and baking and applying a resist.
And exposure, and developing the resist to form a resist
At the same time that the pattern is formed, the organic film is wet-etched.
Forming an organic film pattern by etching.
Dry etching of the base using the film pattern as a mask
A step of removing the resist; and
Completely curing the organic film pattern.
It is characterized by. This simplifies the manufacturing process
And increase productivity. Also, dry etching
Removal of resin residue after wet etching
Sometimes it can be done. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device uses naphthoquinonedia as a photosensitive agent.
Compound, novolak resin as base resin, solvent
And the organic film is a solvent insoluble in a methylamine-based solvent or
Is propylene glycol monoacetyl acetate or 2
-Heptanone or ethyl 3-ethoxypropionate or
Butyl acetate or two or more selected from them
Using a positive resist with a mixed solvent
Lamethylammonium hydroxide (TMAH) solution
Development of the resist with liquid and wet etching of organic film
Dimethylsulfoxide (DMSO)
A mixed solution of monoethanolamine or DMSO and
Mixed solution with chill 2-pyrrolid (NMP) or ethyl lactate
Or removing the resist using butyl acetate
It is characterized by. As a result, the development of the resist and the
It is possible to perform wet etching at the same time,
The process is simplified. In addition, the characteristics of the organic film may be impaired.
And efficient formation and removal of the resist layer
it can. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is a cardo represented by the structural formula of Formula 1.
Having a type compound and an epoxy group represented by the structural formula of Formula 2
The polymer with the compound is applied to form a temperature range of 110 to 170 ° C.
Calcination in the surrounding area and the temperature range of 230 to 280 ° C
It is characterized in that re-firing is performed in the area. This
The resulting organic film has high light transmittance and dry etch resistance.
Simplicity of manufacturing process and product characteristics.
It contributes to improvement of performance.The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is an acrylic resin containing no photosensitive group.
Apply the fat and calcine in the temperature range of 80-100 ° C.
And fired again in the temperature range of 220-260 ° C
Is performed. The resulting organic film
Has high light transmittance, dry etching resistance, and heat resistance.
It contributes to simplifying the manufacturing process and improving the characteristics of the product. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is to temporarily apply the thermosetting resin after applying it.
Baking to form an organic film and applying a resist
Baking and exposing, and developing the resist
At the same time as forming the resist pattern, the organic film is
Forming an organic film pattern by hot etching;
The organic film pattern is semi-cured by a thermal crosslinking reaction.
A step of insolubilizing with respect to the image liquid, and
A process of dry-etching the underlayer as a mask and a substrate
Irradiate UV light from at least the front side or back side of the
A step of solubilizing the dist in a resist stripping agent;
Removing the resist and re-baking to remove the organic film pattern.
Completely curing the turn.
You. This makes it possible to utilize the properties of thermosetting resin
Can be made insoluble in the resist stripping agent
Forming a resist layer without impairing the properties of the resin.
And removal can be performed efficiently. Also, resist
Use only a developer to develop resist and remove organic film patterns.
Can be performed easily and efficiently.
You. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is to temporarily apply the thermosetting resin after applying it.
Baking to form an organic film and applying a resist
Baking and exposing, and developing the resist.
At the same time as forming a resist pattern,
Process of forming an organic film pattern by wet etching
And the underlying layer is dry etched using the organic film pattern as a mask.
Process, and whether at least the front side or back side of the substrate
Irradiates the resist with a resist to remove the resist.
And solubilizing, so that the organic film is insoluble
The resist is removed using a resist stripper whose concentration has been adjusted.
And re-baking to complete the organic sowing pattern
And a step of hardening. This
The same as when heat treatment for thermal crosslinking reaction is performed.
Get the effect. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is performed by using a resist developing solution.
It is characterized in that This allows the resist
Develop the resist and etch the organic film pattern using only the developer.
It is possible to peel and remove the resist,
Simple and efficient. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device uses naphthoquinonedia as a photosensitive agent.
Compound, novolak resin as base resin, solvent
And the organic film is a solvent insoluble in a methylamine-based solvent or
Is propylene glycol monoacetyl acetate or 2
-Heptanone or ethyl 3-ethoxypropionate or
Butyl acetate or two or more selected from them
Using a positive resist with a mixed solvent
Lamethylammonium hydroxide (TMAH) solution
Development of the resist with liquid and wet etching of organic film
And removing the resist.
This allows the resist to be stripped efficiently and
Surface condition is improved. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is such that the photosensitive group is not contained and the acrylic
And a resin containing a photoinitiated polymerization agent,
Calcination is performed in a temperature range of 0 ° C. and 220 to 26
Characterized in that re-firing is performed in a temperature range of 0 ° C.
You. As a result, the obtained organic film has high light transmittance and
Has light etching and heat resistance, simplifies manufacturing process
And it contributes to the improvement of product characteristics. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is based on i-line or shorter wavelength light.
After applying UV curable resin sensitive to
A process of forming a film and a process of applying resist and firing
Exposing the resist to g-rays, and developing the resist.
At the same time as forming a resist pattern,
Process of forming an organic film pattern by wet etching
And irradiate UV light from at least the front side or back side of the substrate.
The organic film pattern is semi-cured by a photocrosslinking reaction
Develop the resist simultaneously with insolubilization in the developer
A step of solubilizing in a liquid, and
Dry etching the underlayer as a mask;
Removing the resist using an image liquid, and re-baking
Curing the organic film pattern completely by
It is characterized by the following. As a result, the UV hardening
At the same time as making the mold resin insoluble,
The production efficiency can be increased. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device uses naphthoquinonedia as a photosensitive agent.
Compound, novolak resin as base resin, solvent
And the organic film is a solvent insoluble in a methylamine-based solvent or
Is propylene glycol monoacetyl acetate or 2
-Heptanone or ethyl 3-ethoxypropionate or
Butyl acetate or two or more selected from them
G-ray sensitive positive resist using mixed solvent
And tetramethylammonium hydroxide
(TMAH) solution development and organic film
Performing wet etching and removal of the resist
It is characterized by. This will impair the properties of the organic film
And efficient formation and removal of the resist layer
it can. Also, resist development, wet etching of organic film
Both the etching and the resist removal are performed with TMAH solution
This is convenient. Also, peeling of resist
Excellent in efficiency and surface condition after peeling. The active matrix type liquid crystal of the present invention
The manufacturing method of the display device is a cardo represented by the structural formula of Formula 1.
Having a type compound and an epoxy group represented by the structural formula of Formula 2
Apply resin containing polymer with compound and photopolymerization initiator
Cloth and calcined in the temperature range of 80 to 150 ° C,
And refired in a temperature range of 230 to 280 ° C.
It is characterized by the following. Due to this, the obtained organic film is high
Has light transmittance, dry etching resistance, and heat resistance,
It contributes to simplifying the manufacturing process and improving the characteristics of products. [0033] The active matrix type liquid crystal of the present invention
The display device isStructure where pixel electrode and wiring overlap
Interlayer insulation on TFT (thin transistor) substrates
An organic film is formed on at least a part of the film and
Using the obtained organic film pattern as a mask
It is characterized by being obtained by performing patterning. this
The organic film obtained by the method has high light transmittance and dry etching resistance.
And heat resistance, improving the characteristics of the liquid crystal display surface.
You. [0035] The active matrix type liquid crystal of the present invention
The display device isThe organic film is a benzocyclobutene polymer
Characterized by the following. This results in high organic film
Excellent light transmittance, dry etching resistance, and heat resistance
Thus, the characteristics of the liquid crystal display surface are improved. The active matrix type liquid crystal of the present invention
The display device isThe organic film has a structure represented by the structural formula of Formula 1.
Having an epoxy group represented by the structural formula of Formula 2
And a polymer with the compound. This
As a result, the organic film has high light transmittance and dry etching resistance
And heat resistance, and the characteristics of the liquid crystal display surface are improved. The active matrix type liquid crystal of the present invention
The display device isAcrylic wherein the organic film does not contain a photosensitive group
It is characterized by being made of a system resin. This allows organic
The film has high light transmittance, dry etching resistance, and heat resistance
And the characteristics of the liquid crystal display surface are improved. The active matrix type liquid crystal of the present invention
The display device uses an organic film pattern by wet etching.
And O_TwoOr CF_FourOr CHF_ThreeOr S
F₆Dry etching using at least one gas
Can be obtained by patterning the base
And features. This simplifies the manufacturing process.
Along with wet etching in the dry etching process.
Resin residue after chining can be removed and obtained
Product characteristics are improved. The active matrix type liquid crystal of the present invention
The display device forms an organic film by applying resin and performing calcination.
Applying a resist on the surface of the formed organic film
Baking, exposure and development to form a resist pattern
And the step of using the resist pattern as a mask
Obtain organic film pattern by wet etching of organic film
And drying the underlayer using the organic film pattern as a mask.
Etching and removing the resist
And re-baking to completely cure the organic film pattern.
And the step of causing the This
Wet etching in the dry etching process
The remaining resin residue can be removed, so it is obtained
Product characteristics are improved. The active matrix type liquid crystal of the present invention
The display device is a naphthoquinone diazo compound as a photosensitive agent,
Novolak resin as base resin, and organic as solvent
Methylamine-based solvent or propyle
Glycol monoacetyl acetate or 2-heptano
Or ethyl 3-ethoxypropionate or butyl acetate
Or a mixed solution obtained by selecting two or more of them.
Use a positive resist with an
The above in ammonium hydroxide (TMAH) solution
After developing the resist, dimethyl sulfoxide (D
Mixed solution of DMSO) and monoethanolamine or DM
A mixed solution of SO and n-methyl 2-pyrrolide (NMP) or
Removal of the resist using ethyl lactate or butyl acetate
Is performed. This allows organic
Formation and removal of resist layer without compromising film properties
Can be performed efficiently, resulting in the characteristics of the product
Is improved. The active matrix type liquid crystal of the present invention
The display device is propylene glycol monoacetyl acetate.
Benzocyclobutene polymer using
Calcined in the temperature range of 130 to 200 ° C.
1,3,5 triisopropylbenzene and aromatic hydrocarbon
Mixed solution with glycol or glycol ether and synthetic isopara
Wet the organic film using a mixed solution with fin-based hydrocarbons.
Etching and temperature range of 240-300 ° C
Characterized by being obtained by re-firing. This
The resulting organic film has high light transmittance and dry etching resistance.
It has chinability and heat resistance, and has excellent properties. The active matrix type liquid crystal of the present invention
The display device is a polysilazane compound or a polysilazane compound.
Polymer of the compound and an acrylic compound containing no photosensitive group.
Apply and calcine at 130-200 ° C
Use a hydrofluoric acid buffer or a buffered hydrofluoric acid solution
And wet-etching the organic film, and
It can be obtained by refiring in the temperature range of 300 ° C.
And features. The resulting organic film has high light transmission.
Has a high rate, dry etching resistance, and heat resistance
Excellent. In addition, SiN which has been conventionally used as an underlayer
The need for the x layer is eliminated, and the manufacturing cost of the product is reduced. The active matrix type liquid crystal of the present invention
The display device uses an organic film pattern by wet etching.
Resist development and organic film
And etching at the same time.
You. The resulting product is low due to the simplification of the process.
Cost. The active matrix type liquid crystal of the present invention
The display device, after applying the resin, performs calcination to form the organic film.
Forming process, applying resist and baking and exposing
Developing the resist to form a resist pattern
Wet etching the organic film at the same time as forming
Forming an organic film pattern, and the organic film pattern
Dry etching of the underlayer using
Removing the resist and re-baking to remove the organic film pattern.
Characterized by the step of completely curing the turn
And The products obtained by this process can be simplified
Low cost. Also, in the dry etching process
It is possible to remove resin residue after wet etching.
As a result, the characteristics of the obtained product are improved. The active matrix type liquid crystal of the present invention
The display device is a naphthoquinone diazo compound as a photosensitive agent,
Novolak resin as base resin, and organic as solvent
Methylamine-based solvent or propyle
Glycol monoacetyl acetate or 2-heptano
Or ethyl 3-ethoxypropionate or butyl acetate
Or a mixed solution obtained by selecting two or more of them.
Use a positive resist with an
The above in ammonium hydroxide (TMAH) solution
Development of resist and wet etching of organic film
Dimethylsulfoxide (DMSO) and monoeta
Mixed solution of DMSO and n-methyl 2-pi
Mixed solution with Loride (NMP) or ethyl lactate or acetic acid
What can be obtained by removing the resist using butyl
And features. As a result, the organic film
Characteristics are not impaired and the resulting product is
Excellent in nature. The active matrix type liquid crystal of the present invention
The display device comprises a cardo type compound represented by the structural formula of Formula 1 and
With a compound having an epoxy group represented by the structural formula of Formula 2:
Apply the polymer and in the temperature range of 110-170 ° C
Perform calcination and in the temperature range of 230-280 ° C
It is characterized by being obtained by re-firing. This
The resulting organic film has high light transmittance and dry etching resistance
It has properties and heat resistance, and has excellent properties. The active matrix type liquid crystal of the present invention
Display devices are coated with acrylic resin that does not contain photosensitive groups.
Calcined in the temperature range of 80 to 100 ° C, and
By re-firing in the temperature range of 220 to 260 ° C.
It is characterized by being able to. The resulting organic film
High light transmittance, dry etching resistance, and heat resistance
And excellent characteristics. The active matrix type liquid crystal of the present invention
The display device is calcined after applying the thermosetting resin.
A step of forming an organic film, applying a resist, firing and
Performing an exposure step; developing the resist to form a resist pattern;
At the same time as the turn is formed, the organic film is wet-etched.
Forming an organic film pattern by etching.
The film pattern is semi-cured by a thermal crosslinking reaction and
And insolubilizing the organic film pattern with a mask
Process to dry-etch the base and reduce the number of substrates
Irradiate UV light from the front or back side to remove the resist
A step of solubilizing a resist stripping agent;
The organic film pattern by re-baking.
Fully curing step.
This makes it possible to use a resist stripping agent with high stripping properties
And the surface condition after removal of the resist becomes good
The quality is improved. The active matrix type liquid crystal of the present invention
The display device is calcined after applying the thermosetting resin.
A step of forming an organic film, applying a resist, firing and
Performing an exposure step and developing the resist to form a resist
Forming a pattern, and masking the organic film pattern.
Dry etching the underlayer as a step
At least by irradiating UV light from the front or back side
Solubilizing the resist in a resist stripping agent;
Use a resist stripper whose concentration has been adjusted so that the film becomes insoluble.
Removing the resist using, and re-baking the
From the process of completely curing the organic sowing pattern
It is characterized by the following. This allows organic
The properties of the membrane are not impaired and the resulting product is
Excellent characteristics. The active matrix type liquid crystal of the present invention
The display device removes the resist using a resist developer.
It is characterized by being obtained by. As a result, the resist is stripped.
The surface condition after separation is improved, and the quality of the product is improved. The active matrix type liquid crystal of the present invention
The display device is a naphthoquinone diazo compound as a photosensitive agent,
Novolak resin as base resin, and organic as solvent
Methylamine-based solvent or propyle
Glycol monoacetyl acetate or 2-heptano
Or ethyl 3-ethoxypropionate or butyl acetate
Or a mixed solution obtained by selecting two or more of them.
Use a positive resist with an
The above in ammonium hydroxide (TMAH) solution
Development of resist and wet etching of organic film and before
It is obtained by removing the resist.
As a result, the resist is stripped efficiently,
The surface condition after separation is good, and the characteristics of the resulting product are
Up. The active matrix type liquid crystal of the present invention
The display does not contain photosensitive groups and is acrylic and photoinitiated
80-110 ° C after applying resin containing polymerization agent
Calcined in the range and at a temperature of 220-260 ° C
It is characterized in that re-firing is performed in the range. This
The resulting organic film has high light transmittance and dry etching resistance
It has properties and heat resistance, and has excellent properties. The active matrix type liquid crystal of the present invention
The display is sensitive to i-line or shorter wavelength light
Apply UV curable resin and calcine to form organic film
, Baking by applying a resist, and g-line
Exposing the resist and developing the resist to form a resist
At the same time that the pattern is formed, the organic film is wet-etched.
To form an organic film pattern by
Irradiating UV light from the front side or the back side
The pattern is semi-cured by photocrosslinking reaction and
At the same time as making the resist insoluble in developer.
A step of solubilizing, and using the organic film pattern as a mask
Dry etching the ground and using the developer
Removing the resist, and re-baking the organic film
And the process of completely curing the pattern.
Sign. As a result, the characteristics of the organic film in the manufacturing process
Is not impaired and the resulting product has excellent properties.
It is. Also, simplification of the process results in low cost products.
It is. The active matrix type liquid crystal of the present invention
The display device is a naphthoquinone diazo compound as a photosensitive agent,
Novolak resin as base resin, and organic as solvent
Methylamine-based solvent or propyle
Glycol monoacetyl acetate or 2-heptano
Or ethyl 3-ethoxypropionate or butyl acetate
Or a mixed solution obtained by selecting two or more of them.
G-line sensitive positive resist using
Tramethylammonium hydroxide (TMAH)
Develop the resist with a solution and wet etch the organic film.
And the removal of the resist.
Features. As a result, the characteristics of the organic film in the manufacturing process
Properties are not impaired and the resulting product
Excellent. In addition, the resist is stripped efficiently, and
The surface condition after peeling is also good, and the characteristics of the product obtained are
improves. The active matrix type liquid crystal of the present invention
The display device comprises a cardo type compound represented by the structural formula of Formula 1 and
With a compound having an epoxy group represented by the structural formula of Formula 2:
Applying a resin containing a polymer and a photopolymerization initiator to form 80
Calcined in the temperature range of ~ 150 ° C and 230
Obtained by re-baking in the temperature range of ~ 280 ° C
It is characterized by the following. The resulting organic film has high light
It has transmittance, dry etching resistance, and heat resistance.
Excellent in nature. [0057] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
For the sake of simplicity, embodiments of the invention will be described below. (Embodiment 1) First embodiment of the present invention
The form is shown. In the present embodiment, a base material is used as the material of the interlayer insulating film.
It relates to the case where nzocyclobutene polymer is used.
is there. FIG. 1 shows the manufacturing process and is described in detail below.
You. SiN formed as in the prior art_X Of membrane 102
Above, benzocyclobutene poly
And calcined at 130-200 ° C
(FIG. 1 (a)). This calcination allows benzocyclobutene
The remmer is semi-cured and the etching rate changes,
It becomes insoluble in the resist solvent. Next, tetramethyl
Ammonium hydroxide (TMHA) or propylene
Using lenglycol monoethyl ether acetate as a solvent
Naphthoquinone diazo-novolak positive type using
Apply resist, bake, expose and develop
A strike pattern 103 is formed (FIG. 1B). Regis
The developer is 0.1 to 1 mol% of tetramethyl alcohol.
Using ammonium hydroxide (TMAH) solution
You. Next, using the resist pattern 103 as a mask,
The organic film 100 of zocyclobutene polymer is wet-etched.
To form an organic film pattern 101 (FIG. 1).
(C)). The etchant is 1,3,5 triisopropyl
A mixed solution of benzene and an aromatic hydrocarbon is used. Next, the resist pattern 103 and the organic film
Dry etching using pattern 101 as a mask, for example
If the etching gas is O_Two/ SF₆Dry using gas
Etching and SiN_X Film 102 and gate insulating film 1
07 is removed (FIG. 1D). Next, the cash register
The resist pattern is removed using a stripper (see FIG. 1).
(E)). Resist stripping agent is dimethyl sulfoxide
A mixed solution of (DMSO) and monoethanolamine or
Mixed solution of DMSO and n-methyl 2-prolidone (NMP)
Alternatively, use ethyl lactate or butyl acetate. Finally, 24
Refire at 0-300 ° C for about 60 minutes,
The zocyclobutene polymer is completely cured. The feature of this embodiment is that the organic film
By using zocyclobutene polymer, this organic
Dry etching of base is possible using film pattern as mask
It was a good point. Benzocyclobutene polymer is
Excellent ly-etching property, suitable for the above dry etching process
The degree of damage is small. Therefore such dry
Etching is possible, simplifying the process compared to conventional
As a result, production efficiency is improved. In this dry etching step,
Is the underlying SiN_X Wet etching simultaneously with film patterning
Benzocyclobutene polymer remaining during etching
Is removed. Therefore, production efficiency is further improved. In general, benzocyclobutene polymers
Has high light transmittance and heat resistance. (Embodiment 2) Next, a second embodiment of the present invention
State. In the present embodiment, the material of the interlayer insulating film is poly.
It relates to the case where a silazane compound is used. FIG.
The manufacturing process is shown in FIG. In this embodiment, the same as in the first embodiment
SiN_X The poly is formed on the film 102 by spin-on coating.
A silazane compound may be applied._X Membrane 102
Polysilazane compound only as interlayer insulating film without using
(FIG. 2A). This is a polysilazane compound
good interface characteristics with the a-Si layer and polysilaza
Part of the silicon oxide film or
Denatured and densified silicon nitride film for water resistance and anti-pollution properties
This is due to the good point. The following steps are the first
Same as Example, but calcining temperature is 130-200 ° C
And a hydrofluoric acid buffer solution or a wet etching solution
Uses a buffered hydrofluoric acid solution. Also, re-firing
This is performed at 240 to 300 ° C. for about 60 minutes. The features of this embodiment are the same as those of the first embodiment.
However, it should be noted that the use of polysilazane compounds
Therefore, the SiN that was usually used_X No need for membrane
And That is, the process is further simplified, and the productivity is improved.
improves. Also, generally, polysilazane compounds are expensive.
Has light transmittance and heat resistance. (Embodiment 3) Next, a third embodiment of the present invention.
State. In this embodiment, the material of the interlayer insulating film is represented by the formula 1
Cardo compound represented by the structural formula of Formula 2 and represented by the structural formula of Formula 2
When using a polymer with a compound having an epoxy group
It is about. FIG. 3 shows the manufacturing process.
The details will be described below. SiN film formed in the same manner as before_X Of membrane 102
On top, the above polymer is applied by a spin-on coating method,
Calcination is performed at 110 to 170 ° C. (FIG. 3A).
This calcination causes the polymer to be semi-cured and the etching rate to decrease
Changes, insoluble in resist remover, resist development
It becomes soluble in liquid. Next, a methylamine-based solvent or propylene
Glycol monoethyl ether acetate or propyle
Glycol monoacetyl acetate or 2-hepta
Non- or ethyl 3-ethoxypropionate or 2-heptane
Tanone or ethyl 3-ethoxypropionate or butyl acetate
Chill or a mixture obtained by selecting two or more of them
Naphthoquinonediazo-novola using mixed solution as solvent
A black positive resist is applied, baked and exposed.
Next, about 0.1 to 1 mol% of tetramethyl ammonium
Resist with TMAH solution
Is developed to form a resist pattern 103,
The wet etching of the organic film 100 proceeds simultaneously.
(FIG. 3 (b)). Next, the resist pattern 103 and the organic film
Dry etching using pattern 101 as a mask, for example
If the etching gas is O_Two/ SF₆Dry using gas
Etching, SiN_X Film 102 and gate insulating film 1
07 is removed (FIG. 3C). Next, the cash register
The resist pattern 103 is removed using a strike stripper.
(FIG. 3 (d)). The resist stripping agent used is the same as in the first embodiment.
The same may be applied. Finally, 30 minutes at 230-280 ° C
Re-baking is performed for a while to completely cure the polymer. The features of this embodiment are the same as those of the first embodiment.
However, it should be noted that the etching level of the organic film
By adjusting the port, it is possible to
This is the point that the wet etching of the film can be performed. this
This further reduces man-hours and improves productivity. Ma
In addition, the cardo type compound represented by the structural formula
Polymer with a compound having an epoxy group represented by the formula,
Has high light transmittance and high heat resistance. Further, according to the manufacturing process of this embodiment,
Organic film pattern by acrylic resin without group
It can also be formed. In this case, the calcination temperature is 80 to 1
00 ° C, re-baking in the range of 220 to 260 ° C
It is desirable. Acrylic resins that do not contain photosensitive groups are
Unlike the acrylic resin that has been used since then, high light transmission
Having a rate. Also, it has excellent heat resistance. (Embodiment 4) Next, a fourth embodiment of the present invention.
State. In the present embodiment, a thermosetting material is used as the material of the interlayer insulating film.
It relates to the case where a modified resin is used. More specific
Is a non-photosensitive acrylic resin (for example, JSR
(Leeds). FIG.
The manufacturing process is shown and described in detail below. As before
A spin-on coating method is applied on the formed SiNx film 102.
Apply the above-mentioned acrylic resin and heat to 80-100 ° C.
And calcination (FIG. 4A). By this calcination,
As in mode 3, the polymer is semi-cured and the etching rate
Changes and is insoluble in the resist stripping agent.
It becomes soluble in the image liquid. Next, a solvent in which acrylic is insoluble, namely 2-
Heptanone or 3-ethoxypropionic acid or butyric acetate
Or a solvent obtained by mixing two or more of them
Using the same resist as in the third embodiment,
Coating, baking, and exposure are performed. Next, as in the third embodiment
Resist development and organic film wet etching
It is sometimes performed (FIG. 4C). Thereafter, at 100 to 130 ° C., 1 to 10
After about a minute of heat treatment, this heat treatment
The thermal crosslinking reaction of the fat is promoted. Next, U at least from the front side or the back side of the substrate.
When V light is applied (FIG. 4D), the light contained in the resin
The resist pattern 103 is exposed to the
Solubilized for Lucari. Next, as in Embodiments 1 to 3,
Etching is performed (FIG. 4E). Next,
The turn 103 is removed (FIG. 4E). Resist stripping
As the agent, a DMSO / amine based release agent (for example,
Chemicals, release 105) or DMSO / NMP-based release agent (example
For example, Tokyo Ohka, peeling 104) is used. Or TM
Use AH solution. Then smell 220-260 ° C
Re-bake for about 30 minutes to completely cure the acrylic resin
To In the present embodiment, the non-photosensitive
The krill resin has been used in the prior art.
It is different from krill resin and does not contain photosensitive groups.
No. Therefore, it has a high light transmittance and a high heat resistance temperature. Further, as a feature of the present invention, UV
By irradiating, the resist resists the resist stripper.
And solubilized. This allows the cash register
It is easy to remove the strike and improve the work efficiency
In addition, the surface condition after removal is improved and the effect of quality improvement is obtained.
Can be In this embodiment, the dry etching
UV irradiation was performed prior to
UV irradiation may be performed. As another feature of the present embodiment, Semi-cured organic film by thermal crosslinking reaction to remove resist
Insolubilized against Completely hardened by re-baking after resist stripping That is, a two-stage heat treatment is performed. Conventional
Resist removal with calcining as it is
Swelling and abrasion when using a strong resist stripper
Probable and could not use them.
However, at the stage when the organic film pattern is formed, the thermal crosslinking reaction
By promoting a semi-cured state,
Resistance to these resist strippers is imparted. Therefore,
Strips more resist than ethyl lactate and butyl lactate
DMSO / amine based release agent with excellent release properties or DMSO
-It becomes possible to use an NMP-based release agent. Similarly, the resist layer-A
TM that can remove the "mixing layer" at the cryl layer interface
AH solution can be used. More
It should be noted that TMA, which is originally a resist developer,
By applying H solution as a resist stripper,
Gist development, wet etching of organic film, and cash register
Can be performed using the same solution.
It is convenient and efficient. (Embodiment 5) Next, a fifth embodiment of the present invention.
State. This embodiment is based on the insensitivity of
An organic film pattern is formed in the same manner as in the fourth embodiment using a light acrylic resin.
After completing the turn formation, perform the following steps.
It is. First, at least from the front side or the back side of the substrate
Irradiation with UV light (FIG. 5D) is performed, and the resist pattern 10
3 is solubilized in alkali. This process is an embodiment
As in the case of 4, it may be performed after the dry etching. next,
The resist pattern 103 and the organic film pattern 101 are
Dry etching is performed as a mask, and the SiNX film 102
And unnecessary portions of the gate insulating film 107 are removed (FIG.
(E)). Next, the TMAH solution damaged the organic film.
Adjust the density appropriately so as not to damage, and use this to
The strike pattern 103 is removed (FIG. 5F). last
Then, re-baking was performed at 220 to 260 ° C for about 30 minutes.
And completely cure the acrylic resin. The feature of this embodiment is that the concentration of the resist remover is high.
The point is that the degree is adjusted. Yes in the fourth embodiment
Enables use of TMAH solution, etc. by thermal crosslinking reaction of membrane
However, in the present embodiment, for the thermal crosslinking reaction
No heat treatment, instead adjust the concentration of resist stripper
The same type of resist stripping as in Embodiment 4
It is possible to apply the agent. (Embodiment 6) Next, a sixth embodiment of the present invention will be described.
State. In this embodiment, the i-line
It is related to the case of using UV-curable resin
You. Examples of i-ray responsive UV-curable resins include
The cardo type compound and the epoxy group used in the form 3
Contains a photoinitiator together with a polymer having a compound
Resin. Hereinafter, when using this resin,
Specific steps will be described below. The steps in this embodiment are the same as those in Embodiment 4.
Follow. However, the calcination of the organic film is performed in the same manner as in the third embodiment.
Perform at ~ 150 ° C. The resist is g-line sensitive.
Using a positive resist, 50-100 mJ / c at g-line
m^TwoThe resist is exposed. Then, as in the fourth embodiment
Resist pattern 103 and organic film pattern 101
After the formation (FIG. 6B), dry etching (FIG. 6B)
(D)) and the resist pattern 103 (FIG. 6 (e)).
Perform removal. The resist stripping agent is the same as in Embodiment 5,
Use the TMAH solution whose concentration has been adjusted. The resist pattern 103 and the organic film
After forming pattern 101 or dry etching
After performing the above, U
By performing V (i-ray) irradiation, cardo-type polymer
Semi-cured by photocrosslinking reaction to make it insoluble in alkali
And at the same time solubilize the resist in alkali
(FIG. 6C), as in the case of the fourth embodiment,
Suitable as a release agent without adjusting the concentration of TMAH solution
Can be used. Then re-heat at 250 ° C for 30 minutes.
Baking is performed to completely cure the cardo-type polymer. What
UV irradiation before and after dry etching
You may go. The most significant feature of this embodiment is that the UV-curable resin
That is, it utilizes the properties of fat. i-ray sensitive UV
Apply g-line sensitive resist to curable resin
In the resist exposure process, the resin is semi-hardened
It is insolubilized with respect to the resist stripping agent.
That is, the thermal crosslinking reaction in Embodiments 4 and 5
Is performed by a photocrosslinking reaction. In the process of UV (i-ray) irradiation,
Is to cure the resin completely and at the same time,
It can be solubilized in H solution. Therefore the embodiment
It is possible to obtain the same effect with fewer steps than in Embodiment 4.
Become. Also, the light transmittance and heat resistance of the cardo type polymer
The excellent property is the same as in the third embodiment.
You. [0090] Next, examples of the present invention will be described. (Example 1) The process shown in Embodiment 1
According to the procedure, the interlayer using benzocyclobutene polymer
An insulating film was formed. Below are more specific manufacturing conditions
It writes in. Organic film thickness-3 μm Calcination temperature-170 ° C Resist-Propylene glycol monoethyl ether acetate solvent                     + Naphthoquinone diazo-novolak positive resist Etching solution-1,3,5 triisopropylbenzene + aromatic hydrocarbon Etching gas-O_Two/ SF₆gas Resist stripper-DMSO / amine based stripper Firing-270 ° C, 60 minutes Light transmission of the obtained interlayer insulating film
As a result of measuring the transmittance and heat resistance, the light transmittance was 400 n
m is 95% or more at m or more, and the heat resistance temperature is 300 ° C.
That was all. (Example 2) The process shown in Embodiment 2
According to the process, an interlayer insulating film using a polysilazane compound is formed.
Formed. More specific manufacturing conditions are described below. Organic film thickness-3 μm Calcination temperature-160 ° C Resist-Propylene glycol monoethyl ether acetate solvent                     + Naphthoquinone diazo-novolak positive resist Etching solution-buffered acid solution Etching gas-O_Two/ SF₆gas Resist stripper-DMSO / amine based stripper Firing-270 ° C, 60 minutes The light transmission of the obtained interlayer insulating film was
As a result of measuring the transmittance and heat resistance, the light transmittance was 400 n
m is 95% or more at m or more, and the heat resistance temperature is 300 ° C.
That was all. (Embodiment 3) The process shown in Embodiment 3
Cardo-type compound represented by the structural formula of Formula 1
And a compound having an epoxy resin represented by the structural formula of Sheet 2
An interlayer insulating film was formed using a polymer with the product. More specific
The typical manufacturing conditions are described below. Organic film thickness-3 μm Calcination temperature-150 ° C Resist-Propylene glycol monoethyl ether acetate solvent                     + Naphthoquinone diazo-novolak positive resist Etching solution-Tetramethylammonium hydroxide (TMAH)                     Solution (resist developer) Etching gas-O_Two/ SF₆gas Resist stripper-butyl lactate Firing-250 ° C, 30 minutes Light transmission of the obtained interlayer insulating film
As a result of measuring the transmittance and heat resistance, the light transmittance was 400 n
m is 95% or more at a temperature of at least 260 m.
That was all. (Embodiment 4) The steps shown in Embodiment 4
According to the procedure, interlayer insulating film using non-photosensitive acrylic resin
Was formed. More specific manufacturing conditions are described below.
You. Organic film thickness-3 μm Calcination temperature-90 ° C Resist-mixed solvent of 2-heptanone and 3-ethoxypropionic acid                     + Naphthoquinone diazo-novolak positive resist Etching solution-Tetramethylammonium hydroxide (TMAH)                     Solution (resist developer) Heat treatment for promoting thermal crosslinking reaction-130 ° C, 5 minutes UV (i-ray) irradiation-500 to 1000 mJ / cm^TwoIrradiates the entire surface (front and back) Etching gas-O_Two/ SF₆gas Resist stripper-DMSO / amine stripper and TMAH solution                     Make samples for each Firing-250 ° C, 30 minutes Light transmission of the obtained interlayer insulating film
As a result of measuring the transmittance and heat resistance, the light transmittance was 400 n
m is 95% or more at a temperature of at least 260 m.
That was all. (Embodiment 5) The steps shown in Embodiment 5
Non-photosensitive acrylic containing photoinitiated polymerizer
An interlayer insulating film using a resin was formed. More specific manufacturing
The conditions are almost the same as those in the fourth embodiment.
Only described below. Resist stripper-adjusted concentration to about 1-1.5%
TMAH solution Light transmission of the obtained interlayer insulating film
As a result of measuring the transmittance and heat resistance, the light transmittance was 400 n
m is 95% or more at a temperature of at least 260 m.
That was all. (Embodiment 6) The steps shown in Embodiment 6
According to the procedure, i-ray sensitive UV curable polymer, ie
Cardo Compound and Epoxy Used in Embodiment 3
Including a photoinitiator together with a polymer having a group
An interlayer insulating film was formed using a resin having the same. More specific
The various manufacturing conditions are described below. Organic film thickness-3 μm Calcination temperature-130 ° C Resist-propylene glycol ethyl ether acetate solvent                     + Naphthoquinone diazo-novolak g-line sensitive positive type                     Resist g-ray irradiation-50 to 100 mJ / cm^Two Etching solution-Tetramethylammonium hydroxide (TMAH)                     Solution (resist developer) Etching gas-O_Two/ SF₆gas UV (i-ray) irradiation-500 to 1000 mJ / cm^TwoIrradiates the entire surface (front and back) Resist stripper-DMSO / amine based stripper with adjusted concentration Firing-250 ° C, 30 minutes Light transmission of the obtained interlayer insulating film
As a result of measuring the transmittance and heat resistance, the light transmittance was 400 n
m or more and 92% or more, heat resistance temperature is 250 ° C
That was all. [0103] As described above, according to the present invention, high transmission is achieved.
Structure with an interlayer insulating film having high heat resistance and high heat resistance
TFT substrate, and an antenna having such a TFT substrate.
Efficient active matrix liquid crystal display devices
It is possible.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view showing a first embodiment of a manufacturing method of the present invention. FIG. 2 is an explanatory view showing a second embodiment of the production method of the present invention. FIG. 3 is an explanatory view showing a third embodiment of the production method of the present invention. FIG. 4 is an explanatory view showing a fourth embodiment of the manufacturing method of the present invention. FIG. 5 is an explanatory view showing a fifth embodiment of the production method of the present invention. FIG. 6 is an explanatory view showing a sixth embodiment of the production method of the present invention. FIG. 7 is an explanatory view schematically showing a first liquid crystal display device in the related art. FIG. 8 is an explanatory view schematically showing a second conventional liquid crystal display device. FIG. 9 is an explanatory view showing a manufacturing process of a second conventional liquid crystal display device. DESCRIPTION OF SYMBOLS 100 Organic film 101 Organic film pattern 102 SiNX film 103 Resist pattern 104 TFT glass substrate 105 Gate electrode 106 Gate side terminal 107 Gate insulating film 108 Data side terminal 109 a-Si film 110 n + a-Si film 111 Drain electrode 112 Source electrode 113 Contact hole 701 Gate line 702 Data line 703 Thin film transistor 710 CF substrate 711 CF glass substrate 712 Black matrix 713 Color layer 714 Counter electrode 720 Liquid crystal layer 730 TFT substrate 731 Pixel electrode 732 Passivation film 801 Interlayer insulating film

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-10-161158 (JP, A) JP-A-10-96963 (JP, A) JP-A-9-325330 (JP, A) International publication 97/43689 (WO, A1) (58) Field surveyed (Int. Cl. ⁷ , DB name) G02F 1/1368

Claims (1)

(57) In the step of forming an interlayer insulating film of a TFT (thin transistor) substrate having a structure in which a pixel electrode and a wiring overlap each other, at least a part of the interlayer insulating film is formed of an organic material. A method for manufacturing an active matrix type liquid crystal display device, comprising forming a film, patterning the film, and patterning a base using the obtained organic film pattern as a mask. 2. An organic film is patterned by a wet etching method, and an underlayer is patterned by a dry etching method using at least one gas selected from O _2, CF _4, CHF _{3, and} SF _6. The method according to claim 1, wherein the method is performed. 3. A step of forming an organic film by performing calcination after applying the resin, and a step of forming a resist pattern by applying a resist on the surface of the formed organic film, and performing baking, exposure and development. A step of wet-etching the organic film using the resist pattern as a mask to obtain an organic film pattern, a step of dry-etching a base using the organic film pattern as a mask, a step of removing the resist, and re-baking. Performing a step of completely curing the organic film pattern.
3. The method for manufacturing an active matrix type liquid crystal display device according to item 1. 4. A positive resist using a naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine-based solvent or propylene glycol monoacetyl acetate as a solvent, and a tetramethylammonium hydroxide (TMAH) solution. And developing the resist by using a mixed solution of dimethylsulfoxide (DMSO) and monoethanolamine, a mixed solution of DMSO and n-methyl-2-pyrrolide (NMP), or ethyl lactate or butyl acetate. 4. The method of manufacturing an active matrix liquid crystal display device according to claim 3, wherein: 5. A benzocyclobutene polymer using propylene glycol monoacetyl acetate as a solvent and calcining in a temperature range of 130 to 200 ° C.
Wet etching of an organic film using a mixed solution of 1,3,5 triisopropylbenzene and an aromatic hydrocarbon or a mixed solution of glycol ether and a synthetic isoparaffinic hydrocarbon, and a temperature range of 240 to 300 ° C. 5. The method according to claim 4, wherein re-firing is performed. 6. A polysilazane compound or a polymer of a polysilazane compound and an acrylic compound having no photosensitive group, and calcined in a temperature range of 130 to 200 ° C., and a hydrofluoric acid buffer or buffered hydrofluoric acid Wet etching of the organic film using the solution;
The method for manufacturing an active matrix liquid crystal display device according to claim 4, wherein re-firing is performed in a temperature range of -300 ° C. 7. The method according to claim 2, wherein in the step of patterning the organic film by the wet etching method, the development of the resist and the etching of the organic film are simultaneously performed. . 8. A step of forming an organic film by performing calcination after applying a resin, a step of applying a resist and performing firing and exposure, and a step of developing the resist to form a resist pattern and simultaneously forming the organic pattern. A step of forming an organic film pattern by wet-etching the film, and a step of dry-etching a base using the organic film pattern as a mask,
The method of manufacturing an active matrix type liquid crystal display device according to claim 7, comprising a step of removing the resist and a step of completely re-baking the organic film pattern. 9. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine solvent or a propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Alternatively, using a positive resist using butyl acetate or a mixed solvent obtained by selecting two or more of them, and developing the resist and wet etching the organic film with a tetramethylammonium hydroxide (TMAH) solution And a mixed solution of dimethylsulfoxide (DMSO) and monoethanolamine or DMSO and n-methyl 2
9. The method according to claim 8, wherein the resist is removed using a mixed solution with pyrrolide (NMP) or ethyl lactate or butyl acetate. 10. A polymer of a cardo type compound represented by the structural formula of Formula 1 and a compound having an epoxy group represented by the structural formula of Formula 2 is applied and calcined in a temperature range of 110 to 170 ° C. The method according to claim 9, wherein refiring is performed in a temperature range of 230 to 280 ° C. 10. (Equation 1) (Equation 2) 11. An acrylic resin containing no photosensitive group is applied and calcined in a temperature range of 80 to 100 ° C.
The method for manufacturing an active matrix liquid crystal display device according to claim 9, wherein re-firing is performed in a temperature range of 220 to 260C. 12. A step of forming an organic film by calcining after applying a thermosetting resin, a step of applying a resist and performing baking and exposure, and a step of developing the resist to form a resist pattern. Simultaneously, a step of forming an organic film pattern by wet etching the organic film, a step of semi-curing the organic film pattern by a thermal crosslinking reaction to make it insoluble in a developing solution, and A step of dry etching, a step of irradiating UV light from at least the front side or the back side of the substrate to solubilize the resist with respect to a resist stripping agent, a step of removing the resist, and a step of refiring to form the organic film pattern. 8. A method of manufacturing an active matrix type liquid crystal display device according to claim 7, comprising a step of completely curing the liquid crystal display device. 13. A step of forming an organic film by calcining after applying a thermosetting resin, a step of applying a resist and performing baking and exposure, and a step of developing the resist to form a resist pattern. A step of dry-etching a base using the organic film pattern as a mask, a step of irradiating UV light from at least a front side or a back side of the substrate to solubilize the resist with respect to a resist stripping agent, and The method according to claim 7, further comprising a step of removing the resist by using a resist stripping agent whose concentration is adjusted to be insoluble, and a step of completely re-baking to completely cure the organic-sprayed pattern. A method for manufacturing an active matrix liquid crystal display device. 14. The method for manufacturing an active matrix liquid crystal display device according to claim 12, wherein the resist is removed using a resist developer. 15. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine-based solvent or propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Alternatively, using a positive resist using butyl acetate or a mixed solvent obtained by selecting two or more of them, and developing the resist and wet etching the organic film with a tetramethylammonium hydroxide (TMAH) solution And removing the resist.
15. The method for manufacturing an active matrix liquid crystal display device according to any one of 2 to 14. 16. A resin which does not contain a photosensitive group and contains acrylic and a photoinitiator, is calcined in a temperature range of 80 to 110 ° C., and refired in a temperature range of 220 to 260 ° C. The method of manufacturing an active matrix liquid crystal display device according to claim 9, wherein the method is performed. 17. A step of applying an i-line or a UV-curable resin sensitive to light having a shorter wavelength than the i-line and then calcining to form an organic film, a step of applying a resist and firing.
a step of exposing with g-line, a step of developing the resist to form a resist pattern and simultaneously forming an organic film pattern by wet etching the organic film, and irradiating UV light from at least the front side or the back side of the substrate. A step of semi-curing the organic film pattern by a photocrosslinking reaction and insolubilizing the resist in a developer while being insolubilized in a developer, and a step of dry-etching a base using the organic film pattern as a mask. 8. The active matrix type liquid crystal display device according to claim 7, comprising: a step of removing the resist by using the developing solution; and a step of re-baking to completely cure the organic film pattern. Production method. 18. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine solvent or a propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Or a g-line sensitive positive resist using butyl acetate or a mixed solvent obtained by selecting at least two of them, and using tetramethylammonium hydroxide (TMA).
18. The method according to claim 17, wherein the developing of the resist, the wet etching of the organic film, and the removal of the resist are performed with a solution. 19. A resin comprising a polymer of a cardo compound represented by the structural formula of Formula 1 and a compound having an epoxy group represented by the structural formula of Formula 2 and a resin containing a photopolymerization initiator, Calcined in the temperature range of ~ 150 ° C;
18. The method for manufacturing an active matrix liquid crystal display device according to claim 9, wherein re-firing is performed in a temperature range of 30 to 280C. 20. In a TFT (thin transistor) substrate having a structure in which a pixel electrode and a wiring overlap with each other, an organic film is formed on at least a part of an interlayer insulating film and is patterned, and the obtained organic film pattern is masked. An active matrix liquid crystal display device obtained by patterning a base. 21. The active matrix type liquid crystal display device according to claim 20, wherein said organic film is made of a benzocyclobutene polymer. 22. The organic film according to claim 20, wherein the organic film is a polymer of a cardo compound represented by the structural formula of Formula 1 and a compound having an epoxy group represented by the structural formula of Formula 2. 20. The active matrix liquid crystal display device according to 20. 23. The active matrix type liquid crystal display device according to claim 20, wherein said organic film is made of an acrylic resin containing no photosensitive group. 24. An organic film obtained by patterning an organic film by a wet etching method and patterning a base by a dry etching method using at least one gas of O _2, CF _4, CHF ₃ or SF _6. The active matrix liquid crystal display device according to claim 20, wherein: 25. A step of forming an organic film by calcining after applying a resin, and a step of forming a resist pattern by applying a resist on the surface of the formed organic film, followed by baking, exposing and developing. A step of wet-etching the organic film using the resist pattern as a mask to obtain an organic film pattern, a step of dry-etching a base using the organic film pattern as a mask, a step of removing the resist, and re-baking. 25. The active matrix type liquid crystal display device according to claim 24, wherein the active matrix type liquid crystal display device is obtained by performing a step of completely curing the organic film pattern. 26. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine-based solvent or propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Alternatively, a positive resist using butyl acetate or a mixed solvent obtained by selecting two or more of them is used, and the resist is developed with a tetramethylammonium hydroxide (TMAH) solution, and dimethyl sulfone is used. The resist is obtained by removing the resist using a mixed solution of oxide (DMSO) and monoethanolamine, a mixed solution of DMSO and n-methyl-2-pyrrolide (NMP), or ethyl lactate or butyl acetate. Active mat according to item 25 Rix type liquid crystal display device. 27. A benzocyclobutene polymer in which propylene glycol monoacetyl acetate is used as a solvent, calcined in a temperature range of 130 to 200 ° C., and 1,3,5 triisopropylbenzene and an aromatic hydrocarbon The organic film is obtained by wet-etching the organic film using a mixed solution of the above or a mixed solution of a glycol ether and a synthetic isoparaffinic hydrocarbon, and re-baking in a temperature range of 240 to 300 ° C. 27. An active matrix liquid crystal display device according to item 26. 28. A polysilazane compound or a polymer of a polysilazane compound and an acrylic compound not containing a photosensitive group is applied, calcined in a temperature range of 130 to 200 ° C., and a hydrofluoric acid buffer or buffered hydrofluoric acid Wet etching of the organic film using the solution;
27. The active matrix type liquid crystal display device according to claim 26, wherein the active matrix type liquid crystal display device is obtained by refiring in a temperature range of 0 to 300 [deg.] C. 29. The active matrix type liquid crystal display device according to claim 24, wherein in the step of patterning the organic film by the wet etching method, the development of the resist and the etching of the organic film are simultaneously performed. . 30. A step of forming an organic film by performing calcination after applying a resin, a step of applying a resist and performing baking and exposure, and a step of developing the resist to form a resist pattern and simultaneously forming the organic pattern. A step of wet-etching the film to form an organic film pattern, a step of dry-etching the underlayer using the organic film pattern as a mask, a step of removing the resist, and re-baking to completely cure the organic film pattern 30. The active matrix liquid crystal display device according to claim 29, wherein the active matrix type liquid crystal display device is obtained from the following steps. 30. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine-based solvent or propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Alternatively, using a positive resist using butyl acetate or a mixed solvent obtained by selecting two or more of them, and developing the resist and wet etching the organic film with a tetramethylammonium hydroxide (TMAH) solution And a mixed solution of dimethylsulfoxide (DMSO) and monoethanolamine or DMSO and n-methyl 2
31. The active matrix liquid crystal display device according to claim 30, obtained by removing the resist using a mixed solution with pyrrolide (NMP) or ethyl lactate or butyl acetate. 32. A polymer of a cardo compound represented by the structural formula of Formula 1 and a compound having an epoxy group represented by the structural formula of Formula 2 is applied and calcined in a temperature range of 110 to 170 ° C. And re-baking in a temperature range of 230 to 280 ° C.
2. The active matrix liquid crystal display device according to 1. 33. An acrylic resin containing no photosensitive group is applied and calcined in a temperature range of 80 to 100 ° C.,
32. The active matrix type liquid crystal display device according to claim 31, wherein the active matrix type liquid crystal display device is obtained by performing refiring in a temperature range of 220 to 260 [deg.] C. 34. A step of forming an organic film by calcining after applying a thermosetting resin, a step of applying a resist and performing baking and exposure, and a step of developing the resist to form a resist pattern. Simultaneously forming the organic film pattern by wet etching the organic film, semi-curing the organic film pattern by a thermal crosslinking reaction to make it insoluble in a developing solution, and using the organic film pattern as a mask to form an underlayer. Dry etching, irradiating UV light from at least the front side or back side of the substrate to solubilize the resist with respect to a resist stripping agent, removing the resist, and re-baking the organic film pattern 30. The active matrix liquid crystal display device according to claim 29, wherein the active matrix liquid crystal display device is obtained from a step of completely curing 35. A step of forming an organic film by calcining after applying a thermosetting resin, a step of applying a resist and firing and exposing, and a step of developing the resist to form a resist pattern. A step of dry-etching a base using the organic film pattern as a mask, a step of irradiating UV light from at least a front side or a back side of the substrate to solubilize the resist with respect to a resist stripping agent, and 30. The method according to claim 29, which is obtained from a step of removing the resist using a resist stripping agent whose concentration has been adjusted to be insoluble, and a step of re-baking to completely cure the organic spray pattern. Of manufacturing an active matrix type liquid crystal display device. 36. The active matrix type liquid crystal display device according to claim 34, wherein the active matrix type liquid crystal display device is obtained by removing a resist using a resist developing solution. 37. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine-based solvent or propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Alternatively, using a positive resist using butyl acetate or a mixed solvent obtained by selecting two or more of them, and developing the resist and wet etching the organic film with a tetramethylammonium hydroxide (TMAH) solution 37. The active matrix liquid crystal display device according to claim 34, wherein the active matrix liquid crystal display device is obtained by removing the resist. 38. A resin containing no photosensitive group and containing acrylic and a photoinitiator is applied and calcined in a temperature range of 80 to 110 ° C., and refired in a temperature range of 220 to 260 ° C. The active matrix liquid crystal display device according to claim 31, wherein the process is performed. 39. A step of applying an i-line or a UV-curable resin sensitive to light having a shorter wavelength than the i-line and then calcining to form an organic film; a step of applying a resist and firing;
a step of exposing with g-line, a step of developing the resist to form a resist pattern and simultaneously forming an organic film pattern by wet etching the organic film, and irradiating UV light from at least the front side or the back side of the substrate. A step of semi-curing the organic film pattern by a photocrosslinking reaction and insolubilizing the resist in a developer while being insolubilized in a developer, and a step of dry-etching a base using the organic film pattern as a mask. 30. The active matrix liquid crystal display device according to claim 29, wherein the active matrix liquid crystal display device is obtained from a step of removing the resist using the developing solution, and a step of re-baking to completely cure the organic film pattern. . 40. A naphthoquinone diazo compound as a photosensitive agent, a novolak resin as a base resin, a methylamine-based solvent or propylene glycol monoacetyl acetate or 2-heptanone or ethyl 3-ethoxypropionate as a solvent in which the organic film is insoluble. Or a g-line sensitive positive resist using butyl acetate or a mixed solvent obtained by selecting at least two of them, and using tetramethylammonium hydroxide (TMA).
40. The active matrix type liquid crystal display device according to claim 39, wherein the active matrix type liquid crystal display device is obtained by performing the development of the resist, the wet etching of the organic film, and the removal of the resist using a solution. 41. A resin containing a polymer of a cardo type compound represented by the structural formula of Formula 1 and a compound having an epoxy group represented by the structural formula of Formula 2 and a resin containing a photopolymerization initiator. Calcined in the temperature range of ~ 150 ° C;
41. The active matrix type liquid crystal display device according to claim 31, wherein the active matrix type liquid crystal display device is obtained by performing re-baking in a temperature range of 30 to 280C.