JP3097603B2 - Inductance element and wireless terminal device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductance element and a radio terminal device which are used for electronic equipment such as mobile communication, and particularly suitably used for high frequency circuits and the like.

[0002]

2. Description of the Related Art FIG. 17 is a side view showing a conventional inductance element. 17, reference numeral 1 denotes a square pillar base, 2 denotes a conductive film formed on the base 1, and 3 denotes a conductive film 2.
Are protection materials laminated on the conductive film 3.

[0003] Such electronic components are adjusted to predetermined characteristics by adjusting the interval between the grooves 3 and the like.

A prior example is disclosed in Japanese Patent Application Laid-Open No. 7-307201.
JP, JP-A-7-297033, JP-A-5-1
JP-A-29133, JP-A-1-238003, JP-A-57-117636, JP-A-5-29925
No. 0, Japanese Unexamined Patent Publication No. 7-297033, and the like.

[0005]

However, in the conventional configuration, the protection member 4 is formed by applying a resist or the like. Therefore, when the inductance element itself is reduced in size, the protection member 4 becomes larger than the terminal portion. In some cases, the protrusions are large, the mounting property is poor, and since a resist or the like must be applied one by one, the productivity has not improved.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an inductance element and a wireless terminal device that can be reduced in size and improved in mountability and productivity.

[0007]

SUMMARY OF THE INVENTION The present invention provides a base, a conductive film formed on the base, a groove provided in the conductive film, and a protection provided so as to cover the groove. And a protective material comprising an electrodeposited film.

[0008]

DETAILED DESCRIPTION OF THE INVENTION The invention according to claim 1 comprises a base,
A conductive film formed on the base, a groove provided in the conductive film, a terminal portion provided on both ends of the base, and between the terminal portions so as to cover the groove. a inductance element and a provided a protective material, by to constitute a protective material in organic and heat-treated electrodeposited resin film insulating thin can uniformly form a protective material, carried out the size of the element Therefore, the gap with the wiring can be reduced. In addition, since protective materials for many elements can be formed at once, productivity can be improved and the surface of the protective materials can be protected.
It can be smooth and more reliably cover the conductive film.
And the corrosion resistance and the like can be improved.

According to a second aspect of the present invention, there is provided a base,
A conductive film formed on the conductive film and a groove provided in the conductive film
And a terminal portion provided on both ends of the base, and the groove
And a protective material provided between the terminal portions so as to cover
Insulation element with a protective material
Protective material by holding insulating particles
Can be formed thinly and uniformly, and the element can be miniaturized.
In this case, the gap with the wiring can be reduced. Also one
Productivity as many elements of protective material can be formed each time
Heat during manufacturing and mounting.
The thickness of the protective material at the corners of the conductive film is low.
The bottom can be prevented.

According to a third aspect of the present invention, in the first and second aspects, the corner portions of the conductive film that are easily discharged are covered by making the thickness of the protective material at the corners of the conductive film larger than other portions. And the plating film does not adhere to the corners.

According to a fourth aspect of the present invention, in the first to third aspects, the protective material has a withstand voltage of 20 V or more,
By having a combustion or evaporated without properties, resistance to
Has pressure and heat resistance.

According to a fifth aspect of the present invention, in the first to third aspects, another metal film is further provided on the conductive film, and a protective material is provided on the metal film so that the film has a more uniform thickness. Since a protective material can be formed, it is more suitable for downsizing the element.

[0013] The invention according to claim 6 is directed to claims 1 to 5.
The surface roughness of the conductive film is set to 1 μm or less.
As a result, the Q value can be improved.

The invention according to claim 7 is the invention according to claims 1 to 5.
When the base is made of a material mainly composed of alumina,
In both cases, the conductive film was made of copper or copper alloy.
As a result, it is possible to manufacture an element corresponding to a high frequency.
In terms of cost, corrosion resistance, and ease of fabrication.
You.

The invention according to claim 8 is a sound signal converting means for converting a sound into a sound signal, an operating means for inputting a telephone number or the like, a display means for displaying an incoming call display or a telephone number, etc., A wireless terminal device comprising: a transmitting unit that demodulates and converts the signal into a transmission signal; a receiving unit that converts a reception signal into a voice signal; an antenna that transmits and receives the transmission signal and the reception signal; and a control unit that controls each unit. Claim 1 as an inductance element constituting a filter circuit or a matching circuit constituting a receiving means and a transmitting means.
The use of the inductance element described in any one of (1) to (8) enables a circuit board or the like to be reduced in size, the size of the apparatus can be reduced, and the mountability of the inductance element is improved. Decrease.

[0016] The invention according to claim 9, a conductive film is formed on the base, removing a part of the conductive film, the electrodeposition resin film is formed by electrodeposition method on the conductive layer, after which the Electroplated tree
By heat treatment in lipid membranes, it is possible to form a protective material a lot of elements at a time, the productivity is improved DOO
In addition, the surface of the protective material can be smoothed, and
Improved ability to cover the conductive film more reliably and improve corrosion resistance
Can be done .

According to a tenth aspect of the present invention, the base is also exposed when the conductive film is removed in the ninth aspect, and the electrodeposition film is formed on at least a part of the conductive film and the base, so that the conductive film is reliably formed. The film can be protected and corrosion of the conductive film can be prevented.

According to an eleventh aspect of the present invention, in the tenth aspect, a groove can be easily provided by removing a part of the base by using a laser when removing the conductive film. The conductive film can be cut off.

According to a twelfth aspect of the present invention, there is provided a base, a formed film formed on the base and formed of at least one of a conductive material and a resistive material, and provided on both ends of the base. and a terminal portion, by said provided between the terminal portions and a protective material covering at least a portion of the formation film was the protective material have a insulating constituted by the heat-treated electrodeposited resin film, protective The material can be formed thin and uniform, the element can be miniaturized, and the gap with the wiring can be reduced.
In addition, since protective materials for many devices can be formed at once, productivity can be improved and the surface of the protective materials can be smoothed.
It can be clear, and more reliably covers the conductive film
As a result, corrosion resistance and the like can be improved.

According to a thirteenth aspect of the present invention, there is provided a base,
Formed on a table, at least one of a conductive material or a resistive material
And a film formed on both sides of the base.
And a small amount of the formation film provided between the terminal portions.
And a protective material that covers at least a part thereof, and insulates the protective material.
It is composed of an electrodeposited resin film holding insulating particles
As a result, the protective material can be formed thin and uniform,
It is possible to reduce the size and reduce the gap between wiring.
Can be. Also, protective materials for many elements can be formed at once.
Can improve productivity, and
Even if heat is applied during fabrication or mounting,
The thickness of the protective material can be prevented from being reduced.

The invention according to claim 14 is the invention according to claims 12 and 1.
In 3, the central portion of the base is stepped down from both ends, and the protective material is provided at the stepped portion, so that the protective material can be provided easily and accurately.

The invention according to claim 15 is the invention according to claims 12 to 1.
In 4, the thickness of the protective material at the corners provided on the formed film is made thicker than other portions, so that the corners of the formed film that are easily discharged can be covered, and the plating film or the like adheres to the corners. I will not do it.

The invention according to claim 16 is the invention according to claims 12 to 1
In 5, the adhesion strength between the formed film and the protective material can be improved by providing the protective material on the surface of the roughened formed film.

According to a seventeenth aspect of the present invention, in the thirteenth aspect , the heat treatment of the protective material makes it possible to smooth the surface of the protective material and to more surely cover the formed film, thereby improving the corrosion resistance. Etc. can be improved.

Hereinafter, the present embodiment will be described by exemplifying an inductance element as an electronic component.

FIGS. 1 and 2 are a perspective view and a side view, respectively, showing an inductance element according to an embodiment of the present invention.

In FIG. 1, reference numeral 11 denotes a base formed by subjecting an insulating material or the like to press working, extrusion, or the like.
Reference numeral 2 denotes a conductive film provided on the base 11.
2 is formed on the base 11 by an evaporation method such as a plating method or a sputtering method. Reference numeral 13 denotes a groove provided in the base 11 and the conductive film 12. The groove 13 may be formed by irradiating the conductive film 12 with a laser beam or the like.
Is mechanically formed by applying a grindstone or the like to the surface. 14 is provided in a portion where the groove 13 of the base 11 and the conductive film 12 is provided,
Protective members 15 and 16 each made of an electrodeposited film are terminal portions on which terminal electrodes are formed. A groove 13 and a protective member 14 are provided between the terminal portions 15 and 16. FIG. 2 is a view in which a part of the protection member 14 is removed.

The inductance element according to the present embodiment has a practical frequency band of 1 to 6 GHz, which corresponds to a high frequency range, has a small inductance of 330 nH or less, and has a length L1, width L2, and length L2 of the inductance element.
The height L3 is preferably as follows.

L1 = 0.5 to 2.5 mm (preferably 0.6 to 1.7 mm) L2 = 0.2 to 2.0 mm (preferably 0.3 to 0.9 mm)
mm) L3 = 0.2 to 2.0 mm (preferably 0.3 to 0.9 mm)
mm) When L1 is 0.5 mm or less, the self-resonant frequency f0 is lowered and the Q value is lowered, so that good characteristics cannot be obtained. Further, when L1 exceeds 2.5 mm, the element itself becomes large, and a substrate on which an electronic circuit or the like is formed (hereinafter abbreviated as a circuit substrate or the like).
It is not possible to reduce the size of a circuit board or the like, and thus it is impossible to reduce the size of an electronic device or the like on which the circuit board or the like is mounted.
When L2 and L3 are each 0.2 mm or less,
The mechanical strength of the element itself becomes too weak, and when the element is mounted on a circuit board or the like by a mounting device or the like, the element may be broken. On the other hand, if L2 and L3 are 2.0 mm or more, the elements become too large, and it is impossible to reduce the size of the circuit board and the like, and furthermore, the size of the device. Note that L4 (depth of step drop) is preferably about 5 μm to 50 μm, and if it is 5 μm or less, the thickness and the like of the protective material 14 must be reduced, and good protection characteristics and the like cannot be obtained. On the other hand, if L4 exceeds 50 μm, the mechanical strength of the base is weakened, which may also cause element breakage.

With respect to the inductance element configured as described above, each part will be described in detail below. FIG. 3 is a cross-sectional view of a base on which a conductive film is formed, and FIGS. 4A and 4B are a side view and a bottom view of the base, respectively.

First, the shape of the base 11 will be described.
As shown in FIGS. 3 and 4, the base 11 is provided with a central portion 11a having a rectangular cross section and both ends of the central portion 11a so as to be easily mounted on a circuit board or the like. It is constituted by ends 11b and 11c. Although the end portions 11b and 11c and the central portion 11a have a rectangular cross section, they may have a polygonal shape such as a pentagonal shape or a hexagonal shape. The central portion 11a is configured to drop down from the end portions 11b and 11c. In the present embodiment, the end portions 11b, 1
By making the cross-sectional shape of 1c substantially square, the mountability of the inductance element to a circuit board or the like was improved.
Further, in the present embodiment, the groove 13 is provided laterally in the central portion 11a.
Is formed, there is no direction even if it is mounted on a circuit board or the like, so that the handling becomes easy. Further, an element portion (the groove 13 and the protective material 14) is formed in the central portion 11a, and terminal portions 15 and 16 are formed in the end portions 11b and 11c.

In this embodiment, both the central portion 11a and the end portions 11b and 11c are substantially square.
The shape may be a regular polygon such as a regular pentagon. Furthermore, in the present embodiment, the central section 11a and the end sections 11c and 11b have the same cross-sectional shape such as a regular square.
May be different. That is, the cross-sectional shape of the end portions 11b and 11c may be a regular polygonal shape, and the cross-sectional shape of the central portion 11a may be another polygonal shape or a circular shape. Central part 11a
The groove 13 can be formed satisfactorily by making the cross-sectional shape circular.

Further, in the present embodiment, the central portion 11a
By stepping down from the ends 11b and 11c,
When the protective material 14 was applied, contact between the protective material 14 and a circuit board or the like was prevented.
The center part 11a depends on the thickness of the circuit board 4 and the condition of the circuit board or the like to be mounted (a groove is formed in a part where the circuit board or the like is mounted, or an electrode portion of the circuit board or the like is raised).
Need not be dropped. Center 11a to end 11
If the step is not dropped from b and 11c, the structure of the base 11 is simplified, the productivity is improved, and the mechanical strength of the central portion 11a is also improved. Even if you do not let the steps drop like this,
It may be a quadrangular prism having a quadrangular cross section, or a prism having a polygonal cross section.

As shown in FIG. 4A, the heights Z1 and Z2 of the ends of the base 11 preferably satisfy the following conditions.

| Z1-Z2 | ≦ 80 μm (preferably 5
0 μm) The height difference between Z1 and Z2 is 80 μm (preferably 50 μm).
m or less), when the element is mounted on a circuit board and attached to a circuit board or the like with solder or the like, the element is pulled to one end by surface tension of the solder or the like, and the element stands up. The probability of occurrence is very high. This Manhattan phenomenon is shown in FIG. As shown in FIG. 5, an inductance element is arranged on a substrate 200,
Solder 20 between each of terminal portions 15 and 16 and substrate 200
Although the solders 201 and 202 are provided, when the solders 201 and 202 are melted by reflow or the like, the molten solders 201 and 202 are melted due to a difference in the application amount of each of the solders 201 and 202 and a difference in melting point due to a difference in material. 5 differs between the terminal portion 15 and the terminal portion 16, and as a result, as shown in FIG. 5, one of the terminal portions (the terminal portion 1 in FIG.
5), the inductance element rises. If the difference between the heights of Z1 and Z2 exceeds 80 μm (preferably 50 μm or less), the elements are arranged on the substrate 200 in an inclined state, and the standing of the elements is promoted. In addition, the Manhattan phenomenon occurs remarkably particularly in small and lightweight chip-type electronic components (including a chip-type inductance element), and one of the causes of the Manhattan phenomenon is the difference in height between the terminal portions 15 and 16. It was noted that the device was inclined and was arranged on the substrate 200. As a result, by forming the base 11 by molding or the like so that the difference between the heights of Z1 and Z2 is 80 μm or less (preferably 50 μm or less), the occurrence of the Manhattan phenomenon could be significantly suppressed. . By setting the difference between the heights of Z1 and Z2 to 50 μm or less, the occurrence of the Manhattan phenomenon can be substantially suppressed.

Next, the chamfering of the base 11 will be described.
FIG. 6 is a perspective view of a base used for the inductance element according to one embodiment of the present invention. As shown in FIG. 6, each corner 1 of the ends 11 b and 11 c of the base 11 is provided.
The chamfered edges 1e and 11d are preferably formed, and the radius of curvature R1 of the chamfered corners 11e and 11d and the radius of curvature R2 of the corner 11f of the central portion 11a are preferably formed as follows.

0.03 <R1 <0.15 (mm) 0.01 <R2 (mm) If R1 is less than 0.03 mm, the corners 11e and 11d
Since the corners are sharp, the corners 11e and 11d may be chipped due to a slight impact or the like, and the chipping may cause deterioration of characteristics or the like. When R1 is 0.15 mm or more, the corner 11
Since e and 11d are too round, the above-mentioned Manhattan phenomenon is likely to occur, which causes a problem. Furthermore, when R2 is 0.
When the thickness is less than 01 mm, burrs and the like are likely to be generated on the corners 11f, and the thickness of the conductive film 12, which is formed on the central portion 11a and greatly affects the characteristics of the element, differs greatly between the corners 11f and the flat portion. And the variation in element characteristics becomes large.

Next, the constituent materials of the base 11 will be described. It is preferable to satisfy the following characteristics as a constituent material of the base 11.

Volume resistivity: 10 ¹³ Ωcm or more (preferably 10 ¹⁴ Ωcm or more) Thermal expansion coefficient: 5 × 10 ⁻⁴ Ωcm or less (preferably 2 × 1)
0 ^-5 [Omega] cm or less) Thermal expansion coefficient at 20 ° C. to 500 ° C.] dielectric constant of 12 or less at 1 MHz (preferably 10 or less) Bending strength: 1300 kg / cm ² or more (preferably 20
Density: ^{2 to 5} g / cm ³ (preferably ³ to 4 g / cm ³ ) If the constituent material of the base 11 has a volume resistivity of 10 ¹³ Ωcm or less, the conductive material 12 and the base 11 Also, a current starts to flow in a predetermined manner, so that a parallel circuit is formed,
The self-resonant frequency f0 and the Q value are low, and are not suitable for high-frequency devices.

If the coefficient of thermal expansion is 5 × 10 ⁻⁴ Ωcm or more, cracks may occur in the base 11 due to heat shock or the like. That is, the coefficient of thermal expansion is 5 × 10 ⁻⁴ Ωc
If it is not less than m, a laser beam, a grindstone, or the like is used when forming the groove 13 as described above, so that the base 11 locally becomes high temperature, and cracks and the like may occur in the base 11,
By having the above-described coefficient of thermal expansion, the occurrence of cracks and the like can be greatly suppressed.

If the dielectric constant is 12 or more at 1 MHz, the self-resonant frequency f0 and the Q value become low, which is not suitable for a high-frequency device.

When the bending strength is 1300 kg / cm ² or less, the device may be broken when mounted on a circuit board or the like by a mounting apparatus.

When the density is 2 g / cm ³ or less, the base 1
1, the water absorption rate is increased, the characteristics of the base 11 are significantly deteriorated, and the characteristics as an element are deteriorated. The density is 5 g / c
If it exceeds m ³ , the weight of the base will be heavy, and there will be a problem in mountability and the like. In particular, when the density is set within the above range, the water absorption rate is small, the water hardly enters the base 11, and the weight is light, so that there is no problem when mounting the chip on a substrate by a chip mounter or the like.

By defining the volume resistivity, thermal expansion coefficient, dielectric constant, bending strength, and density of the base 11 as described above, the self-resonant frequency f0 and the Q value do not decrease. It is possible to suppress the occurrence of cracks and the like in the base 11 due to heat shock or the like, so that the defect rate can be reduced, and further, the mechanical strength can be improved. Therefore, excellent effects such as an improvement in productivity can be obtained.

As a material for obtaining the above-mentioned various properties, a ceramic material containing alumina as a main component can be mentioned. However, simply using a ceramic material mainly composed of alumina cannot obtain the above-mentioned characteristics. That is,
Since the above-mentioned various characteristics vary depending on the pressing pressure, the sintering temperature, and the additives at the time of producing the base 11, the production conditions and the like must be appropriately adjusted. Specific manufacturing conditions include a pressing pressure of 2 to 5 tons when processing the base 11, a firing temperature of 1500 to 1600 ° C., and a firing time of 1 to 3 hours. Specific examples of the alumina material include Al ₂ O ₃ of 92 wt% or more, SiO ₂ of 6 wt% or less, MgO of 1.5 wt% or less, and Fe ₂ O ₃ of 0.1 wt% or less.
% Or less, and Na ₂ O of 0.3% by weight or less.

Next, the surface roughness of the base 11 will be described. The surface roughness described below means the average roughness of the center line, and the roughness described in the description of the conductive film 12 is also the average roughness of the center line.

The surface roughness of the base 11 is 0.15 to 0.5 μm
m, preferably about 0.2 to 0.3 μm. FIG. 7 is a graph showing the surface roughness of the base 11 and the rate of occurrence of peeling. FIG. 7 shows the results of an experiment as described below. The base 11 and the conductive film 12 were made of alumina and copper, respectively, and samples with various surface roughnesses of the base 11 were prepared, and the conductive film 12 was formed on each sample under the same conditions. Each sample was subjected to ultrasonic cleaning, and thereafter, the surface of the conductive film 12 was observed to determine whether or not the conductive film 12 was peeled. The surface roughness of the base 11 was measured using a surface roughness measuring device (574A, manufactured by Tokyo Seimitsu Surfcom).
The one having a tip R of 5 μm was used. As can be seen from this result, if the average surface roughness is 0.15 μm or less,
The rate of occurrence of peeling of the conductive film 12 formed thereon is about 5%, and good bonding strength between the base 11 and the conductive film 12 can be obtained. Further, if the surface roughness is 0.2 μm or more, peeling of the conductive film 12 hardly occurs. Therefore, if possible, the surface roughness of the base 11 is preferably 0.2 μm or more. Since the peeling of the conductive film 12 is a major factor in deterioration of the characteristics of the element, the rate of occurrence is 5% in terms of yield and the like.
The following is preferred.

FIG. 8 shows the frequency and Q with respect to the surface roughness of the base.
It is a graph which shows the relationship of a value. FIG. 8 shows the results of the following experiment. First, a base 11 having a surface roughness of 0.1 μm or less, a base 11 having a surface roughness of 0.2 to 0.3 μm,
Each sample of the base 11 having a surface roughness of 0.5 μm or more was prepared, and a conductive film of the same material (copper) and the same thickness was formed on each sample. Then, in each sample, the Q value at a predetermined frequency F was measured. As can be seen from FIG. 8, when the surface roughness of the base 11 is 0.5 μm or more, a decrease in the Q value, which is considered to be caused by the deterioration of the film structure of the conductive film 12, is observed. Particularly in the high frequency region, the Q value is significantly deteriorated. The self-resonant frequency f0 (the maximum value of each line) is shifted to the lower frequency side when the surface roughness of the base 11 is 0.5 μm. Therefore, the surface roughness of the base 11 is preferably 0.5 μm or less from the viewpoint of the Q value and the surface of the self-resonant frequency f0.

As described above, judging from the results of both the adhesion strength between the conductive film 12 and the base 11, the Q value of the conductive film, and the self-resonant frequency f0, the surface roughness of the base 11 is 0.15.
μm to 0.5 μm, more preferably 0.2 μm
０．３0.3 μm is good.

It is preferable that the end portions 11b and 11c and the center portion 11a have different average surface roughnesses. That is, the average surface roughness of the end portions 11b and 11c is set in the central portion 1 within the range of 0.15 to 0.5 μm.
It is preferable to make the average surface roughness smaller than 1a.
Since the terminal portions 15 and 16 are formed by laminating the conductive films 12 on the end portions 11b and 11c as described above, the surface roughness of the end portions 11b and 11c is made smaller than that of the central portion 11a, so that the end portions 11b and 11c are formed. Since the surface roughness of the conductive film 12 formed on 11b and 11c can be reduced, the adhesion to electrodes such as a circuit board can be improved, and the inductance element can be securely bonded to the circuit board and the like. it can. Further, a conductive film 12 is laminated on the central portion 11a to form a groove 13
Is formed, so that the conductive film 12 does not come off from the base 11 when the groove 13 is formed by a laser or the like.
Therefore, it is preferable that the surface roughness of the central portion 11a is larger than that of the end portions 11b and 11c because the adhesion strength between the base 11 and the base 11 must be improved. In particular, when the groove 13 is formed by laser, the temperature of the portion irradiated with the laser rises more rapidly than other portions, and the conductive film 12 may peel off due to heat shock or the like. Therefore, when the grooves 13 are formed by laser, it is necessary to increase the bonding density between the conductive film 12 and the base 11 as compared with other portions.

As described above, the central portion 11a and the end portions 11b, 11
By making the surface roughness different from that of c, it is possible to prevent the conductive film 12 from peeling off at the time of forming the groove 13 and the adhesion to a circuit board or the like.

In this embodiment, the bonding strength between the conductive film 12 and the base 11 is improved by adjusting the surface roughness of the base 11.
2 to improve the adhesion strength between the conductive film 12 and the base 11 without adjusting the surface roughness by providing an intermediate layer composed of Cr alone or an alloy of Cr and another metal. Can be. Of course, when the surface roughness of the base 11 is adjusted and the intermediate layer and the conductive film 12 are laminated on the base 11, it is possible to obtain a stronger adhesion strength between the conductive film 12 and the base 11. it can.

Next, the conductive film 12 will be described. The conductive film 12 has a small inductance of 330 nH or less, and has a Q value for a high frequency signal of 800 MHz or more.
Those having a value of 30 or more are preferred. In order to obtain the conductive film 12 having such characteristics, a material, a manufacturing method, and the like must be selected.

Hereinafter, the conductive film 12 will be specifically described. Examples of a constituent material of the conductive film 12 include conductive materials such as copper, silver, gold, and nickel. A predetermined element may be added to the material such as copper, silver, gold, and nickel to improve weather resistance and the like. Alternatively, an alloy such as a conductive material and a nonmetallic material may be used. Copper and its alloys are often used as constituent materials in terms of cost, corrosion resistance, and ease of fabrication. When copper or the like is used as the material of the conductive film 12, first, a base film is formed on the base 11 by electroless plating, and a predetermined copper film is formed on the base film by electrolytic plating. The conductive film 12 is formed. Further, when the conductive film 12 is formed of an alloy or the like, it is preferable to form the conductive film 12 by a sputtering method or a vapor deposition method. When copper or an alloy thereof is used as a constituent material, the thickness of the conductive film 12 is preferably 15 μm or more. If the thickness is less than 15 μm, the conductive film 12
Is small, and it is difficult to obtain a predetermined characteristic. FIG. 9 is a graph showing the relationship between the thickness of the conductive film 12 and the Q value. Copper is used as a constituent material of the conductive film 12, and the material and surface roughness of the base 11 are set to the same conditions, and the thickness of the conductive film 12 formed on the base 11 is changed. The Q value at was measured. As can be seen from FIG. 9, when the thickness of the conductive film 12 is 15 μm or more, the Q value exceeds 30. The thickness of the conductive film 12 is 15 μm.
In the above-mentioned region, the Q value is not so much improved, and the thickness of the conductive film 12 is preferably set to 35 μm or less for cost reduction and reduction of the defective rate. The thickness of the conductive film 12 is 2
1 μm or more is more preferable.

The conductive film 12 may be composed of a single layer, but may have a multilayer structure. That is, a plurality of conductive films having different constituent materials may be stacked. For example, first, a copper film is formed on the base 11, and then a metal film having good weather resistance (such as nickel) is laminated thereon, so that corrosion of copper, which is somewhat problematic in weather resistance, can be prevented. .

Examples of the method for forming the conductive film 12 include a plating method (such as an electrolytic plating method and an electroless plating method), a sputtering method, and a vapor deposition method. Among these forming methods,
A plating method with good mass productivity and small variations in film thickness is often used.

The surface roughness of the conductive film 12 is preferably 1 μm or less, more preferably 0.2 μm or less. When the surface roughness of the conductive film 12 exceeds 1 μm, the Q value at high frequencies decreases due to the skin effect. FIG. 10 is a graph showing the relationship between the frequency of the conductive film 12 and the Q value. FIG. 10 was derived through the following experiment. First, a conductive film 12 made of copper is formed on a base 11 having the same size and the same material with the same surface roughness while changing the surface roughness. Was measured.
As can be seen from FIG. 10, the surface roughness of the conductive film 12 is 1 μm.
Above this, it can be seen that the Q value in the high frequency region is low. Further, it can be seen that when the surface roughness of the conductive film 12 is 0.2 μm or less, the Q value particularly in a high frequency region is extremely high.

As described above, the surface roughness of the conductive film 12 is 1.
The thickness is preferably 0 μm or less, and more preferably 0.2 μm or less, the skin effect of the conductive film 12 can be reduced, and the Q value particularly at high frequencies can be improved.

Further, the adhesion strength between the conductive film 12 and the base 11 is as follows:
After leaving the base 11 on which the conductive film 12 is formed at a temperature of 400 ° C. for a few seconds, it is preferable that the conductive film 12 be separated from the base 11 by a degree or more. When the element is mounted on a substrate or the like, a temperature of 200 ° C. or more may be applied to the element due to self-heating or heat from other members. Therefore, the conductive film 12 from the base 11 at 400 ° C.
If the adhesion strength is such that no peeling occurs, even if heat is applied to the element, the characteristics of the element do not deteriorate.

Next, the protective member 14 will be described. The protection member 14 is formed of an insulating film formed by an electrodeposition method. Since the protective material 14 is formed of an electrodeposited film, the insulating material can be very thin and the insulation can be ensured, and the heat resistance can be improved. Especially effective. In other words, in the case of an element that does not use a step-down, if the method of applying a resist or the like is used as in the past, the protective material portion rises greatly. There may be a gap between them, and sufficient electrical bonding may not be performed. However, by forming the protective material 14 with an electrodeposition film, a thin and uniform protective material 14 can be formed. When the element is mounted on a circuit board or the like, the gap between the terminal portion and the wiring becomes very small, and electrical connection between the wiring and the terminal of the base can be sufficiently performed.

In the conventional method of applying a resist or the like, each element must be applied using a tape or the like, so that the number of steps is increased and productivity is not improved. Although the manufacturing cost cannot be reduced, as in the present embodiment, by forming the protective material 14 with an electrodeposition film, the protective material 14
Can be provided, so that productivity can be improved and costs can be reduced.

As a specific constituent material of the protective material 14, an electrodeposition resin film made of at least one resin material such as an acrylic resin, an epoxy resin, a fluorine resin, a urethane resin, and a polyimide resin is used. It is configured. In the case where the protective material 14 is formed of an electrodeposited film, and when either the cation type or the anion type is selected, the constituent material of the conductive film 12, the constituent material of the electrodeposited film, and the usage of the inductance element are used. It is preferable to determine in consideration of the above. The protective material 14 may be formed by laminating electrodeposited films made of different materials, or may be formed by laminating the same material. Further, a plurality of electrodeposited films may be stacked on the groove 13 in parallel. It may be provided.

When the protective material 14 is formed of an electrodeposited film, it is preferable that the protective material 14 has a thickness of several tens of microns and a withstand voltage of 20 V or more, and has a melting point of 183 ° C., which is the melting point of solder.
It is preferable to use a material having characteristics of not burning or evaporating. In the case where the protective material 14 is softened at 183 ° C., no problem occurs.

Further, as shown in FIG. 15A, it is preferable that the protective material 14 made of an electrodeposited film is provided so as to cover both the conductive film 12 and at least a part of the base 11. By providing the protective material 14 in this manner, the conductive film 12 can be almost covered, and the probability of contact between the conductive film 12 and outside air can be extremely reduced. Etc. can be prevented. In the case where the protective material 14 is provided only on the conductive film 12 as shown in FIG. 15B, the corner 12z of the conductive film 12 is likely to be exposed, which may cause corrosion of the conductive film 12. .

Therefore, as shown in FIG. 15A, the corners 12z of the conductive film 12 are overlaid so that at least a part of the base 11 is covered with the protective material 14, so that a reliable conductive film can be obtained. Twelve protections can be covered.

Further, as shown in FIG.
Part 1 of protective material 14 formed on outer corner 12p
4z is preferably thicker than the other portions.
By increasing the thickness of the portion 14z, it is possible to prevent the corner portion 12p from being discharged with other portions, and to prevent deterioration of characteristics as an inductance element.

In some cases, it is important for an inductance element used for a special purpose to have an adhesion strength between the conductive film 12 and the protective material. In this case, it is preferable to roughen the surface of the conductive film 12 by chemical etching, and to provide a protective material 14 made of an electrodeposition film on the roughened surface. As previously mentioned,
If the surface of the conductive film 12 is roughened, there is a risk of lowering the Q value.
In some cases, it is important to improve the adhesion strength between the conductive film 12 and the conductive film 12.
Must be determined appropriately.

When the conductive film 12 is made of a material containing copper, the protective material 14 which is an electrodeposition film may be formed with an uneven film thickness. A metal film such as Ni is formed thereon, and a protective material 1 is formed on the metal film.
4 may be formed.

Next, a method for forming the protective member 14 composed of an electrodeposition film will be described. As shown in FIG. 16, reference numeral 100 denotes a container. The container 100 contains a solution 101 obtained by mixing an adjusting agent such as water, an electrodeposition resin, a pH adjusting agent, and other additives. 102 is an electrode plate, 103 is an inductance element, 104 and 105 are holding members, respectively, and the holding members 104 and 105 are provided with holes into which both ends of the inductance element 103 fit. The holding member 105 is provided with an energizing section 6, and the energizing section 6 is in contact with the inductance element 103.

When a predetermined voltage is applied to the electrode plate 102 and the current-carrying portion 106, an electrodeposition film is formed on portions except for both ends of the inductance element 103. This is because both ends of the inductance element 103 enter the holding members 104 and 105 and do not make much contact with the solution 101.

As described above, it is preferable to heat-treat the element after producing the inductance element having the protective material composed of the electrodeposition film. By this heat treatment, the surface of the protective material 14 becomes smooth, the surface roughness becomes small, and the protective material 14 is surely covered. In addition, when heat treatment is performed, the thickness of the protective material 14 at the corners of the conductive film 12 may be reduced. In this case, insulating particles (for example, metal oxide) are added to the solution 101. Mix
By keeping the insulating particles in the protective material 14 made of the electrodeposited film, the thickness of the protective material 14 at the corners of the conductive film 12 can be suppressed.

As shown in FIG. 11, the protective member 14 has a length Z1 between the corner 13a of the groove 13 and the surface of the protective member 14.
Is preferably 5 μm or more. Z
When 1 is smaller than 5 μm, it is conceivable that characteristic deterioration, discharge, and the like are likely to occur, and the characteristics of the element are significantly deteriorated.
In addition, the corner 13a of the groove 13 is a portion where discharge or the like is particularly likely to occur, and it is highly preferable that a protective material 14 having a thickness of 5 μm or more is formed on the corner 13a. In some cases, after the protective material 14 is formed, plating is performed again to form an electrode film or the like. However, if the protective material 14 having a thickness of 5 μm or more is not formed on the corners 13a, the electrode film or the like may adhere. Thus, an electrode film or the like is formed on the protective material 14 in which the characteristics are deteriorated, and the characteristics are deteriorated.

Next, the terminals 15 and 16 will be described.
Although the terminal portions 15 and 16 function satisfactorily even with the conductive film 12 alone, it is preferable that the terminal portions 15 and 16 have a multilayer structure in order to adapt to various environmental conditions and the like.

FIG. 12 is a sectional view of the terminal portion 15. FIG.
2, a conductive layer 12 is formed on the end 11b of the base 11, and a protective layer 30 made of a weather-resistant material such as nickel or titanium is formed on the conductive layer 12.
0 is formed, and a bonding layer 301 made of solder or the like is formed on the protective layer 300. Protective layer 3
00 can improve the bonding strength between the bonding layer and the conductive film 12 and the weather resistance of the conductive film. In the present embodiment, at least one of nickel and a nickel alloy is used as a constituent material of the protective layer 300, and the bonding layer 301 is used.
Was used as a constituent material. The thickness of the protective layer 300 (nickel) is preferably 2 to 7 μm, and if the thickness is less than 2 μm, the weather resistance is deteriorated.
The electrical resistance of (nickel) itself increases, and the element characteristics deteriorate significantly. The thickness of the bonding layer 301 (solder) is 5
When the thickness is less than 5 μm, a solder erosion phenomenon occurs, and good bonding between the element and a circuit board cannot be expected. When the thickness exceeds 10 μm, the Manhattan phenomenon easily occurs, and the mountability is extremely low. Worse.

The inductance element configured as described above does not suffer from characteristic deterioration, and has very good mountability and productivity.

A method of manufacturing the inductance element having the above-described configuration will be described below.

First, the base 11 is manufactured by pressing or extruding an insulating material such as alumina. Next, a conductive film 12 is formed on the entire base 11 by a plating method, a sputtering method, or the like. Next, a spiral groove 13 is formed in the base 11 on which the conductive film 12 is formed. The groove 13 is formed by laser processing or cutting. Since the laser processing has very high productivity, the laser processing will be described below. First, the base 11 is mounted on a rotating device, the base 11 is rotated, and a laser is applied to the central portion 11a of the base 11 to remove both the conductive film 12 and the base 11, thereby forming a spiral groove. I do. At this time, an excimer laser, a carbon dioxide gas laser, or the like can be used as the laser, and the laser beam is focused on the central portion 11a of the base 11 by narrowing the laser beam with a lens or the like. Further, the groove 13
The depth or the like can be adjusted by adjusting the power of the laser, and the width or the like of the groove 13 can be adjusted by exchanging a lens when narrowing down the laser beam. Also, depending on the constituent material of the conductive film 12, etc.,
Since the laser absorptivity is different, it is preferable that the type of laser (laser wavelength) be appropriately selected depending on the constituent material of the conductive film 12.

After the groove 13 is formed, a protective material 14 is formed on the portion (center portion 11) where the groove 13 is formed by an electrodeposition method using an apparatus as shown in FIG.

Although the product is completed at this point, a nickel layer or a solder layer may be laminated on the terminal portions 15 and 16 to improve the weather resistance and the bonding property. The nickel layer and the solder layer are formed on a semi-finished product on which the protective material 14 is formed by a plating method or the like.

Although the present embodiment has been described with reference to an inductance element, the same effect can be obtained with an electronic component in which a conductive film is formed on a base made of an insulating material.

FIGS. 13 and 14 are a perspective view and a block diagram, respectively, showing a wireless terminal device according to an embodiment of the present invention. 13 and 14, reference numeral 29 denotes a microphone for converting a voice into a voice signal, 30 denotes a speaker for converting a voice signal into a voice, 31 denotes an operation unit including dial buttons and the like, and 32 denotes a display unit for displaying an incoming call and the like. Reference numeral 33 denotes an antenna, and reference numeral 34 denotes a transmission unit for demodulating an audio signal from the microphone 29 and converting it into a transmission signal. The transmission signal produced by the transmission unit 34 is emitted to the outside through the antenna. A receiving unit 35 converts a received signal received by the antenna into an audio signal.
Is converted to voice. 36 is a transmitting unit 34 and a receiving unit 3
5, a control unit for controlling the operation unit 31 and the display unit 32;

Hereinafter, an example of the operation will be described. First, when there is an incoming call, the receiving unit 35 sends the
The control unit 36 displays a predetermined character or the like on the display unit 32 based on the incoming signal,
Further, when a button or the like for receiving an incoming call is pressed from the operation unit 31, a signal is sent to the control unit 36, and the control unit 36
Set each part to the incoming call mode. That is, the signal received by the antenna 33 is converted into an audio signal by the receiving unit 35, and the audio signal is output from the speaker 30 as audio.
The voice input from the microphone 29 is converted into a voice signal, and is transmitted to the outside via the transmitting unit 34 and the antenna 33.

Next, a case of transmitting a call will be described. First, when transmitting a signal, a signal indicating that the signal is transmitted from the operation unit 31 is input to the control unit 36. Subsequently, when a signal corresponding to the telephone number is transmitted from the operation unit 31 to the control unit 36, the control unit 36 transmits a signal corresponding to the telephone number from the antenna 33 via the transmission unit 34. When communication with the other party is established by the transmission signal, a signal to that effect is sent to the control unit 36 through the reception unit 35 via the antenna 33, and the control unit 36 sets each unit to the transmission mode. That is, the signal received by the antenna 33 is converted into an audio signal by the receiving unit 35, the audio signal is output as audio from the speaker 30, and the audio input from the microphone 29 is converted into an audio signal, Through the antenna 33 to the outside.

The inductance element described above (FIG. 1)
To FIG. 12, FIG. 15, and FIG.
And a filter circuit or a matching circuit in the receiving unit 35, and the number thereof is about several to 40 in one wireless terminal device. As described above, the protective material 1
By forming the electrode 4 with an electrodeposition film, the inductance element can be made very small, so that the device can be downsized. Further, the mountability of the inductance element can be improved, and the defect rate of the device can be improved. Is also reduced.

As described above, it has been described that an inductance element, especially a chip-type inductance element is provided with a protective material made of an electrodeposition film to have excellent characteristics. It can also be applied to electronic components such as resistors and resistors, and the same effect can be obtained. In particular, among electronic components, a chip component can have a remarkable effect similarly to the inductance element.

In the case of a capacitor, at least a pair of conductive films are provided separately on a base made of a dielectric material, and at least a part of the conductive film is covered with a protective material made of an electrodeposition film. I do. Further, at least a part of the conductive film,
A protective material made of an electrodeposition film may be provided so as to cover the exposed base between the conductive films.

In the case of the resistor, a resistance film made of carbon or the like is formed on a base made of an insulating material, and a protective material made of an electrodeposition film is provided on the resistance film. In the case of this resistor, a configuration in which a resistive film is provided instead of the conductive film of the inductance element shown in FIG. 1 is preferable. That is, in the resistor,
In order to adjust the resistance value, it is preferable to form a spiral groove and provide a protective material so as to cover the groove.

As described above, with respect to electronic components (particularly, chip components), a formed film composed of at least one of a resistive film and a conductive film is provided on a base, and an electrodeposited film is formed on the formed film. By providing such a protective material, it is possible to obtain the same effect as the above-described inductance, such as adaptation to downsizing of the element.

[0089]

The present invention comprises a base, a conductive film formed on the base, a groove provided in the conductive film, and a protective material provided so as to cover the groove. In this inductance element, when the protective material is formed of an electrodeposited film, the element can be reduced in size, the mountability can be improved, and the productivity can be improved.

Further, the wireless terminal device equipped with the above-described inductance element can be downsized, and the failure rate of the device can be reduced.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an inductance element according to an embodiment of the present invention.

FIG. 2 is a side view showing the inductance element according to the embodiment of the present invention;

FIG. 3 is a cross-sectional view of a base on which a conductive film used for an inductance element according to an embodiment of the present invention is formed.

FIG. 4 is a diagram showing a base used for an inductance element according to one embodiment of the present invention;

FIG. 5 is a side view showing the Manhattan phenomenon.

FIG. 6 is a perspective view of a base used for the inductance element according to the embodiment of the present invention.

FIG. 7 is a graph showing the surface roughness and the rate of occurrence of peeling of a base used for an inductance element according to an embodiment of the present invention.

FIG. 8 is a graph showing a relationship between a frequency and a Q value with respect to a surface roughness of a base used for an inductance element according to an embodiment of the present invention.

FIG. 9 is a graph showing a relationship between a film pressure of a conductive film used for an inductance element and a Q value according to one embodiment of the present invention.

FIG. 10 is a graph showing a relationship between frequency and Q value with respect to surface roughness of a conductive film used for an inductance element according to one embodiment of the present invention.

FIG. 11 is a side view of a portion provided with a protective material for an inductance element according to an embodiment of the present invention.

FIG. 12 is a sectional view of a terminal portion of the inductance element according to the embodiment of the present invention;

FIG. 13 is a perspective view showing a wireless terminal device according to one embodiment of the present invention;

FIG. 14 is a block diagram showing a wireless terminal device according to an embodiment of the present invention;

FIG. 15 is a partial cross-sectional view showing an inductance element according to one embodiment of the present invention.

FIG. 16 is a diagram showing a state in which a protective material is formed on the inductance element according to one embodiment of the present invention.

FIG. 17 is a side view showing a conventional inductance element.

[Explanation of symbols]

 Reference Signs List 11 base 11a central part 11b, 11c end part 11d, 11e, 11f corner part 12 conductive film 12z corner part 13 groove 14 protective material 14z part 15, 16 terminal part 30 speaker 31 operation part 32 display part 33 antenna 34 transmission part 35 receiving unit 36 control unit

────────────────────────────────────────────────── ─── Continuation of the front page (72) Mitsuo Kamimei 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-2-224212 (JP, A) JP-A-5 -129133 (JP, A) JP-A-7-122446 (JP, A) JP-A-5-267085 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01F 27/02, 17 / 04,41 / 04

Claims (17)

(57) [Claims] 1. A base, a conductive film formed on the base, a groove provided in the conductive film, a terminal provided on both ends of the base, and the groove. a inductance element and a protective material moreover provided between said terminal portion so as to cover the inductance element characterized by being configured with chromatic and heat-treated electrodeposited resin film insulating protective material. 2. A base, and a conductive film formed on the base.
And a groove provided in the conductive film, and on both ends of the base.
And the terminal portion provided on the
Inductance with protective material provided between terminals
An element that protects the protective material with insulating and insulating particles.
An inductance element comprising an electrodeposited resin film carried thereon . 3. The method according to claim 1, wherein the thickness of the protective material at the corners of the conductive film is greater than that of the other portions.
The inductance element described. 4. The protective material has a withstand voltage of 20 V or more,
The inductance element according to any one of claims 1 to 3, wherein the inductance element has a characteristic of not burning or evaporating at 3 ° C. 5. The semiconductor device according to claim 1, wherein another metal film is provided on the conductive film, and a protective material is provided on the metal film.
3. The inductance element according to any one of claims 3 to 3. 6. The inductance element according to claim 1, wherein the surface roughness of the conductive film is 1 μm or less . 7. A base made of a material mainly composed of alumina.
6. The inductance element according to claim 1 , wherein said conductive film is made of copper or a copper alloy . 8. A voice signal conversion means for converting voice into a voice signal, an operation means for inputting a telephone number and the like, a display means for displaying an incoming call display, a telephone number and the like, and a demodulation of a voice signal into a transmission signal. A transmitting unit for converting, a receiving unit for converting a received signal into an audio signal, an antenna for transmitting and receiving the transmitted signal and the received signal, and a wireless terminal device including a control unit for controlling each unit; A wireless terminal device using the inductance element according to claim 1 as an inductance element forming a filter circuit or a matching circuit forming a transmission unit. 9. A conductive film is formed on a base, a part of the conductive film is removed, an electrodeposited resin film is formed on the conductive film by an electrodeposition method, and thereafter , the heat treatment is performed on the electrodeposited resin film. Add
And a method of manufacturing an inductance element. 10. The base is also exposed when the conductive film is removed.
The method according to claim 9, wherein an electrodeposition film is formed on at least a part of the conductive film and the base. 11. A method for removing a conductive film by using a laser.
The method for manufacturing an inductance element according to claim 10, wherein a part of the base is also removed . 12. A base, a formed film formed on the base, and formed of at least one of a conductive material and a resistive material, a terminal provided on both ends of the base, provided between the terminal portions and a protective material covering at least a portion of the formation film, characterized in that the protective material is constituted by <br/> electrocoating resin film has been heat treated to have a insulating electronic parts. 13. A base, and a conductive layer formed on the base and electrically conductive.
Formed film composed of at least one of a material and a resistance material
A terminal provided on both ends of the base;
Between the subunits and covers at least a part of the formation film.
And a protective material, wherein the protective material has insulating properties and insulating particles.
An electronic component characterized by comprising an electrodeposited resin film holding the above . 14. The center of the base is stepped down from both ends,
14. The electronic component according to claim 12, wherein a protective material is provided on the stepped portion. 15. The method according to claim 12, wherein the thickness of the protective material at the corners provided on the formation film is greater than other portions.
15. The electronic component according to any one of items 14 to 14. 16. The electronic component according to claim 12, wherein a protective material is provided on the surface of the roughened formed film. 17. The electronic component according to claim 13, wherein the protection material is heat-treated.