JP2996524B2 - Polyimide curing device - Google Patents
Polyimide curing deviceInfo
- Publication number
- JP2996524B2 JP2996524B2 JP3052713A JP5271391A JP2996524B2 JP 2996524 B2 JP2996524 B2 JP 2996524B2 JP 3052713 A JP3052713 A JP 3052713A JP 5271391 A JP5271391 A JP 5271391A JP 2996524 B2 JP2996524 B2 JP 2996524B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- heating
- exhaust pipe
- reaction product
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Formation Of Insulating Films (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板上のポリイミドを
加熱して硬化させるポリイミド硬化装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyimide curing apparatus for heating and curing polyimide on a substrate.
【０００２】[0002]
【従来の技術】近年、半導体素子の最終保護膜或いは液
晶の配向膜として有機物である感光性ポリイミドが多用
されつつある。その理由は、感光性ポリイミドは、従来
のポリイミドに比べて基板上のパターン形成がフォトレ
ジストと同様の方法で形成できるので、パターン形成工
程が簡素化できるためである。2. Description of the Related Art In recent years, photosensitive polyimide, which is an organic substance, has been widely used as a final protective film of a semiconductor device or an alignment film of a liquid crystal. The reason is that the photosensitive polyimide can form a pattern on a substrate by a method similar to that of a photoresist as compared with the conventional polyimide, so that the pattern forming process can be simplified.
【０００３】この場合、基板上にパターン形成された感
光性ポリイミドを加熱して硬化させる装置として、従来
から図２に示すようなポリイミド硬化装置が用いられて
きた。In this case, a polyimide curing apparatus as shown in FIG. 2 has conventionally been used as an apparatus for heating and curing a photosensitive polyimide pattern formed on a substrate.
【０００４】このポリイミド硬化装置は、基板上のポリ
イミドを加熱して硬化させるためメインヒータ４を備え
た加熱炉本体１と、加熱炉本体１内に収納されポリイミ
ドが塗布された基板を保持する棚状のボード治具５と、
ボード治具５を保持するボード支持部材１７と、加熱炉
本体１の内部で開口しキャリアガスを炉内に導入するた
めのガス導入管１６と、加熱炉本体１の下部に開口し炉
内で発生した反応生成ガスをキャリアガスと共に炉外へ
排出するため、加熱炉本体１の下部の排気口３から炉外
上方へ延びる主排気管１３とを備えている。This polyimide curing apparatus comprises a heating furnace main body 1 provided with a main heater 4 for heating and curing polyimide on a substrate, and a shelf for holding the polyimide-coated substrate housed in the heating furnace main body 1. Board jig 5 in the shape of
A board support member 17 for holding the board jig 5; a gas introduction pipe 16 opened inside the heating furnace main body 1 for introducing a carrier gas into the furnace; In order to discharge the generated reaction product gas to the outside of the furnace together with the carrier gas, a main exhaust pipe 13 extending upward from the lower part of the heating furnace body 1 to the outside of the furnace is provided.
【０００５】[0005]
【発明が解決しようとする課題】しかるに、前記構造の
ポリイミド硬化装置においては、ポリイミドが硬化する
際に発生する反応生成ガス（アウトガス）が、加熱炉本
体１の内部における温度の低い部分つまり加熱炉本体１
の下部１５、加熱炉本体１の下端開口部１０近傍及びガ
ス導入管１６の下部に付着するため、数回のバッチ処理
毎に、加熱炉本体１、ガス導入管１６、ボード治具５及
びボード支持部材１７を洗浄しなければならないという
問題があった。However, in the polyimide curing apparatus having the above-mentioned structure, the reaction product gas (outgas) generated when the polyimide is cured is reduced in a portion of the heating furnace body 1 where the temperature is low, that is, the heating furnace. Body 1
Of the heating furnace body 1, the gas introduction pipe 16, the board jig 5 and the board every several batch processes to adhere to the lower part 15 of the furnace, near the lower end opening 10 of the heating furnace body 1, and below the gas introduction pipe 16. There was a problem that the support member 17 had to be cleaned.
【０００６】また、反応生成ガスの加熱炉本体１への付
着量と半導体基板におけるポリイミド開口部への付着量
には相関関係があり、加熱炉本体１への付着量が多くな
るにつれて半導体基板におけるポリイミド開口部への付
着量も多くなるという傾向がある。このため、例えば、
図３に示すように、所定の工程を完了した半導体基板１
８上に最終保護膜として感光性ポリイミド１９を使用す
る場合、ポリイミド開口部となる半導体基板１８上に形
成されたアルミニウムよりなるボンディングパッド２０
の表面にポリイミドの反応生成ガスが付着するという問
題がある。このため、その後の組立工程におけるワイヤ
ボンディング時に、ボンディングワイヤとボンディング
パッド間の合金形成が付着物２１により阻害されてボン
ディング不良が発生するという問題があった。Further, there is a correlation between the amount of the reaction product gas attached to the heating furnace main body 1 and the amount of the reaction product gas attached to the polyimide opening in the semiconductor substrate. The amount of adhesion to the polyimide opening tends to increase. Thus, for example,
As shown in FIG. 3, a semiconductor substrate 1 having completed a predetermined process
When a photosensitive polyimide 19 is used as a final protective film on the substrate 8, a bonding pad 20 made of aluminum formed on the semiconductor substrate 18 to be a polyimide opening.
There is a problem that a reaction product gas of polyimide adheres to the surface of the substrate. For this reason, at the time of wire bonding in the subsequent assembling process, there is a problem that the formation of an alloy between the bonding wire and the bonding pad is hindered by the deposits 21 and a bonding failure occurs.
【０００７】また、ポリイミドを硬化させる際に発生す
る反応生成ガスを主排気管１３に排出する場合、該主排
気管１３に反応生成ガスが付着し、長期の使用によって
主排気管１３がつまるという問題があった。Further, when the reaction product gas generated when curing the polyimide is discharged to the main exhaust pipe 13, the reaction product gas adheres to the main exhaust pipe 13 and the main exhaust pipe 13 is clogged by long-term use. There was a problem.
【０００８】さらに、通常、共通の主排気管１３には前
記ポリイミド硬化装置を初めとする複数の装置の排気口
が接続されるが、各装置の稼働状態によって排気圧にば
らつきが発生するため、ポリイミド硬化装置からの反応
生成ガスの排出状態もばらつくことになる。このため、
前述の加熱炉本体１における炉内付着量がばらつきメン
テナンス頻度を一定に管理できなくなるという問題、及
び半導体基板におけるポリイミド開口部への付着量がば
らつき、再現性が不安定な状態で前述のワイヤーボンデ
ィング不良が発生するという問題があった。Further, the common main exhaust pipe 13 is usually connected to the exhaust ports of a plurality of devices including the polyimide curing device. However, since the exhaust pressure varies depending on the operating state of each device, The state of discharge of the reaction product gas from the polyimide curing device also varies. For this reason,
The aforementioned problem that the amount of adhesion in the furnace in the heating furnace main body 1 fluctuates and the maintenance frequency cannot be maintained at a constant level, and the amount of adhesion to the polyimide opening in the semiconductor substrate fluctuates and the above-described wire bonding is performed in an unstable state. There was a problem that defects occurred.
【０００９】本発明は前記問題点を一挙に解決し、加熱
炉本体、ガス導入管及びボード保持具等に対する洗浄回
数を低減することができると共に、基板に対する反応生
成ガスの再付着を減少させることができ、さらに排気系
におけるクリーニング頻度を略一定にできるようにする
ことを目的とする。SUMMARY OF THE INVENTION The present invention solves the above problems all at once, and can reduce the number of times of cleaning the heating furnace main body, the gas introduction pipe, the board holder, and the like, and reduce the re-adhesion of the reaction product gas to the substrate. It is another object of the present invention to make it possible to make the frequency of cleaning in the exhaust system substantially constant.
【００１０】[0010]
【課題を解決するための手段】前記の目的を達成するた
め、本発明に係るポリイミド硬化装置を、基板上のポリ
イミドを加熱して硬化させるための加熱炉本体と、該加
熱炉本体の上部に開口しキャリアガスを炉内に導入する
ための導入口と、前記加熱炉本体の下部に開口し炉内で
発生した反応生成ガスを前記キャリアガスと共に炉外へ
排出するための排気口と、該排気口から炉外方向へ延び
る排気管と、該排気管の途中部に設けられ該排気管を流
通する反応生成ガスを液化して排出するためのトラップ
と、前記加熱炉本体の下部を加熱して炉内下部を保温す
る炉内下部保温手段と、前記排気管における前記トラッ
プよりも上流側を加熱して管内を保温する管内保温手段
と、前記排気管における前記トラップよりも下流側に設
けられ排気圧を略一定に保つ圧力調整手段とを備えてい
る構成とするものである。In order to achieve the above object, a polyimide curing apparatus according to the present invention is provided with a heating furnace body for heating and curing polyimide on a substrate, An opening for introducing a carrier gas into the furnace, an opening for opening a lower part of the heating furnace main body, and an exhaust port for discharging a reaction product gas generated in the furnace to the outside of the furnace together with the carrier gas; An exhaust pipe extending from the exhaust port to the outside of the furnace, a trap provided in the middle of the exhaust pipe for liquefying and discharging a reaction product gas flowing through the exhaust pipe, and heating a lower part of the heating furnace body. A lower-furnace heat-retaining means for keeping the lower part of the furnace warm, a heat-retaining means for keeping the inside of the exhaust pipe warmer by heating the upstream side of the trap, and a heat-insulating means provided downstream of the trap in the exhaust pipe. Abbreviation of exhaust pressure It is an arrangement and a pressure regulating means for maintaining a constant.
【００１１】[0011]
【作用】上記の構成により、キャリアガスを炉内に導入
するための導入口を加熱炉本体の上部で開口するよう設
けたため、キャリアガスを炉内に導入するためのガス導
入管を加熱炉本体の内部に設ける必要がないので、ポリ
イミドの硬化時に発生する反応生成ガスが前記ガス導入
管に付着するという問題がない。According to the above construction, the introduction port for introducing the carrier gas into the furnace is provided so as to open at the upper part of the heating furnace main body. Therefore, the gas introduction pipe for introducing the carrier gas into the furnace is connected to the heating furnace main body. Since there is no need to provide the inside, the reaction product gas generated at the time of curing the polyimide does not adhere to the gas introduction tube.
【００１２】また、排気口から炉外方向へ延びる排気管
の途中部に反応生成ガスを液化して排出するためのトラ
ップと、加熱炉本体の下部を加熱して炉内下部を保温す
る炉内下部保温手段と、排気管におけるトラップよりも
上流部を加熱して管内を保温する管内保温手段とを設け
たため、前述の反応生成ガスは、加熱炉本体の下部、排
気口近傍部及び排気管におけるトラップよりも上流部で
液化することなくトラップに到達し、該トラップで一気
に液化される。A trap for liquefying and discharging the reaction product gas is provided at an intermediate portion of an exhaust pipe extending from the exhaust port to the outside of the furnace, and a furnace for heating the lower portion of the heating furnace body and keeping the lower portion of the furnace warm. Since the lower heat retaining means and the in-pipe warming means for heating the upstream portion of the exhaust pipe from the trap to keep the inside of the pipe warm are provided, the above-mentioned reaction product gas is supplied to the lower part of the heating furnace main body, in the vicinity of the exhaust port and in the exhaust pipe It reaches the trap without liquefaction at the upstream part of the trap, and is liquefied at a stretch by the trap.
【００１３】さらに、排気管におけるトラップよりも下
流側に排気圧を略一定に保つ圧力調整手段を設けたた
め、排気圧が略一定になり反応生成ガスの排出状態にバ
ラツキが生じなくなるので、排気系における反応生成ガ
スの付着量が略一定になる。Further, since a pressure adjusting means for keeping the exhaust pressure substantially constant downstream of the trap in the exhaust pipe is provided, the exhaust pressure becomes substantially constant and the discharge state of the reaction product gas does not vary. , The amount of the reaction product gas adhered becomes substantially constant.
【００１４】[0014]
【実施例】以下、本発明の一実施例を図面に基づき説明
する。An embodiment of the present invention will be described below with reference to the drawings.
【００１５】図１は本発明の一実施例に係るポリイミド
硬化装置の断面構造を示し、同図において、１は石英チ
ューブよりなる縦型の加熱炉本体であって、該加熱炉本
体１の上部及び下部を除く炉壁の外周にはメインヒータ
４が設けられている。加熱炉本体１の内部には棚状のボ
ード治具５がボード支持部材１７によって保持されてお
り、該ボード治具５の棚には、パターン形成されイミド
化していない感光ポリイミドを有する半導体基板６が各
々セットされている。FIG. 1 shows a cross-sectional structure of a polyimide curing apparatus according to one embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a vertical heating furnace main body made of a quartz tube, A main heater 4 is provided on the outer periphery of the furnace wall except for the lower part. Inside the heating furnace main body 1, a shelf-shaped board jig 5 is held by a board support member 17, and on the shelf of the board jig 5, a semiconductor substrate 6 having a patterned polyimide which is not imidized is provided. Are set respectively.
【００１６】本実施例の特徴として、加熱炉本体１の半
球状の上壁部の中央には、キャリアガス例えばＮ2 ガス
を炉内に導入するためのガス導入口２が設けられている
と共に、加熱炉本体１の周壁の下端部には、炉内で発生
した反応生成ガスを前記キャリアガスと共に炉外へ排出
するための排気口３が設けられており、該排気口３には
水平方向に延びる横向き排気管９の一端が取り付けられ
ている。横向き排気管９の他端には上下方向に延びる水
冷トラップ１１の上部が連設されており、該水冷トラッ
プ１１の下部には連通管２２の一端が接続されている。
そして連通管２２の他端には、排気圧を略一定に保つ圧
力調整手段としてのオートダンパー１４を介して、上下
方向に延びる主排気管１３が接続されている。As a feature of this embodiment, a gas inlet 2 for introducing a carrier gas, for example, N 2 gas, into the furnace is provided in the center of the hemispherical upper wall of the heating furnace body 1. At the lower end of the peripheral wall of the heating furnace body 1, an exhaust port 3 for discharging the reaction product gas generated in the furnace together with the carrier gas to the outside of the furnace is provided. Is attached to one end of a horizontal exhaust pipe 9 extending to the side. The upper end of a vertically extending water cooling trap 11 is connected to the other end of the horizontal exhaust pipe 9, and the lower end of the water cooling trap 11 is connected to one end of a communication pipe 22.
The main exhaust pipe 13 extending in the vertical direction is connected to the other end of the communication pipe 22 via an auto damper 14 as a pressure adjusting means for keeping the exhaust pressure substantially constant.
【００１７】さらに、本実施例の特徴として、メインヒ
ータ４の下側には、加熱炉本体１の下部を加熱して炉内
下部の温度を一定に保つ炉内下部保温手段としての第１
サブヒータ１２Ａが設けられていると共に、横向き排気
管９の外周には、排気管におけるトラップよりも上流部
を加熱して管内の温度を一定に保つ管内保温手段として
の第２サブヒータ１２Ｂが設けられている。Further, as a feature of the present embodiment, a lower part of the main heater 4 is provided as a first in-furnace heat retaining means for heating the lower part of the heating furnace main body 1 and keeping the temperature of the lower part in the furnace constant.
A sub-heater 12A is provided, and a second sub-heater 12B is provided on the outer periphery of the horizontal exhaust pipe 9 as an in-tube heat keeping means for heating an upstream portion of a trap in the exhaust pipe to keep the temperature in the pipe constant. I have.
【００１８】前記構造のポリイミド硬化装置において、
メインヒータ４に通電すると、加熱炉本体１の内部は約
４００℃に昇温された後、約４００℃に保持される。こ
れにより半導体基板６上のポリイミドのイミド化と感光
基の離脱化が行われ、これに伴って反応生成ガス（アウ
トガス）７が発生する。この反応生成ガス７は、ガス導
入口２から導入されるキャリアガス８と共に排気口３か
ら横向き排気管９を通って放出される。In the polyimide curing apparatus having the above structure,
When the main heater 4 is energized, the temperature inside the heating furnace main body 1 is raised to about 400 ° C., and then maintained at about 400 ° C. Thereby, imidization of the polyimide on the semiconductor substrate 6 and desorption of the photosensitive group are performed, and a reaction product gas (outgas) 7 is generated accordingly. The reaction product gas 7 is discharged from the exhaust port 3 through the lateral exhaust pipe 9 together with the carrier gas 8 introduced from the gas inlet port 2.
【００１９】従来構造のポリイミド硬化装置では、均熱
領域からはずれた位置特に排気口３近傍においては、反
応生成ガス７の温度が下がり、反応生成ガス７が液化し
て加熱炉本体１の下端開口部１０、排気口３の近傍部及
び横向き排気管９の内面に付着するという問題があった
が、本実施例では、第１及び第２サブヒータ１２Ａ，１
２Ｂが設けられているために、反応生成ガス７は加熱炉
本体１の下部及び横向き排気管９の内部で液化すること
なく、水冷トラップ１１に到達する。そして、水冷トラ
ップ１１で一気に冷却されて該水冷トラップ１１の内壁
に付着する。In the polyimide curing apparatus having the conventional structure, the temperature of the reaction product gas 7 decreases at a position deviating from the heat equalizing region, particularly near the exhaust port 3, and the reaction product gas 7 liquefies to open the lower end of the heating furnace body 1. There is a problem that the first and second sub-heaters 12A and 12A adhere to the portion 10, the vicinity of the exhaust port 3 and the inner surface of the lateral exhaust pipe 9.
Since the 2B is provided, the reaction product gas 7 reaches the water-cooled trap 11 without being liquefied in the lower part of the heating furnace main body 1 and inside the horizontal exhaust pipe 9. Then, the water-cooled trap 11 is cooled at a stretch and adheres to the inner wall of the water-cooled trap 11.
【００２０】また、本実施例では、連通管２２と主排気
管１３との間にオートダンパー１４が介設されているた
め、反応生成ガスの排出状態にバラツキが生じず、排気
系における付着量が略一定になるので、排気系のクリー
ニング頻度を略一定にすることができる。In this embodiment, since the auto damper 14 is interposed between the communication pipe 22 and the main exhaust pipe 13, the discharge state of the reaction product gas does not vary, and the amount of adhesion in the exhaust system is reduced. Becomes substantially constant, so that the frequency of cleaning the exhaust system can be made substantially constant.
【００２１】さらに、ガス導入口２を加熱炉本体１の上
壁部に設けたため、従来のように、加熱炉本体１の内部
にガス導入管を配設する必要がないので、ガス導入管の
外壁に反応生成ガスが付着するという問題は生じない。Further, since the gas inlet 2 is provided in the upper wall portion of the heating furnace main body 1, there is no need to arrange a gas introducing pipe inside the heating furnace main body 1 as in the prior art. There is no problem that the reaction product gas adheres to the outer wall.
【００２２】[0022]
【発明の効果】以上説明したように、本発明に係るポリ
イミド硬化装置によると、キャリアガスを炉内に導入す
るための導入口を加熱炉本体の上部で開口せしめたた
め、ガス導入管を加熱炉本体内に設ける必要がないの
で、反応生成ガスがガス導入管に付着するという問題を
解消することができる。また、反応生成ガスを液化して
排出するためのトラップと、加熱炉本体の下部を加熱し
て炉内下部を保温する炉内下部保温手段と、排気管にお
けるトラップよりも上流側を加熱して管内を保温する管
内保温手段とを設けたため、反応生成ガスは、加熱炉本
体の下部、排気口近傍部及び排気管におけるトラップよ
りも上流側に付着し難くなる。As described above, according to the polyimide curing apparatus of the present invention, the introduction port for introducing the carrier gas into the furnace is opened at the upper part of the heating furnace main body, so that the gas introduction pipe is connected to the heating furnace. Since it is not necessary to provide in the main body, the problem that the reaction product gas adheres to the gas introduction pipe can be solved. Also, a trap for liquefying and discharging the reaction product gas, a furnace lower heat retaining means for heating the lower part of the heating furnace body to keep the furnace lower part, and heating the exhaust pipe upstream of the trap in the exhaust pipe. Since the in-pipe heat retaining means for keeping the inside of the pipe is provided, the reaction product gas is less likely to adhere to the lower part of the heating furnace main body, the vicinity of the exhaust port, and the upstream side of the trap in the exhaust pipe.
【００２３】このため、本発明によると、従来の装置に
比べて、加熱炉本体及びボード保持具等に対する洗浄回
数を低減することができると共に、基板に対する反応生
成ガスの再付着を減少させることができ高品質なポリイ
ミドパターンを形成することが可能になる。Therefore, according to the present invention, it is possible to reduce the number of times of cleaning the heating furnace body and the board holder and the like, and to reduce the re-adhesion of the reaction product gas to the substrate, as compared with the conventional apparatus. As a result, a high quality polyimide pattern can be formed.
【００２４】さらに、本発明によると、排気管における
トラップよりも下流側に排気圧を略一定に保つ圧力調整
手段を設けたため、反応生成ガスの排出状態にバラツキ
が生じなくなり、排気系における反応生成ガスの付着量
が略一定になるので、排気系におけるクリーニング頻度
を一定にすることができる。Further, according to the present invention, since the pressure adjusting means for maintaining the exhaust pressure substantially constant is provided downstream of the trap in the exhaust pipe, there is no variation in the discharge state of the reaction product gas, and the reaction product in the exhaust system is not generated. Since the amount of adhered gas is substantially constant, the frequency of cleaning in the exhaust system can be constant.
【図１】本発明の一実施例に係るポリイミド硬化装置の
構成を示す断面図である。FIG. 1 is a cross-sectional view showing a configuration of a polyimide curing device according to one embodiment of the present invention.
【図２】従来のポリイミド硬化装置の構成を示す断面図
である。FIG. 2 is a cross-sectional view showing a configuration of a conventional polyimide curing device.
【図３】感光性ポリイミドが保護膜としてパターニング
されたボンディングパッドを有する半導体基板に反応生
成ガスが付着した状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state where a reaction product gas is attached to a semiconductor substrate having a bonding pad on which a photosensitive polyimide is patterned as a protective film.
１…加熱炉本体 ２…ガス導入口（導入口） ３…排気口 ４…メインヒータ ５…ボード治具 ６…感光性ポリイミド付き基板 ７…反応生成ガス ８…キャリアガス ９…横向き排気管 １０…下端開口部 １１…水冷トラップ（トラップ） １２Ａ…第１サブヒータ（炉内下部保温手段） １２Ｂ…第２サブヒータ（管内保温手段） １３…主排気管 １４…オートダンパー（圧力調整手段） １５…加熱炉本体の下部 １６…ガス導入管 １７…ボード支持部材 １８…半導体基板 １９…感光性ポリイミド ２０…ボンディングパッド ２１…付着物 DESCRIPTION OF SYMBOLS 1 ... Heating furnace main body 2 ... Gas inlet (inlet) 3 ... Exhaust port 4 ... Main heater 5 ... Board jig 6 ... Substrate with photosensitive polyimide 7 ... Reaction generated gas 8 ... Carrier gas 9 ... Horizontal exhaust pipe 10 ... Lower end opening 11: water-cooled trap (trap) 12A: first sub-heater (lower heating means in furnace) 12B: second sub-heater (heat keeping means in pipe) 13: main exhaust pipe 14: automatic damper (pressure adjusting means) 15: heating furnace Lower part of main body 16 Gas introduction pipe 17 Board support member 18 Semiconductor substrate 19 Photosensitive polyimide 20 Bonding pad 21 Adhered matter
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/312 H01L 21/31 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/312 H01L 21/31
Claims (1)
るための加熱炉本体と、該加熱炉本体の上部に開口しキ
ャリアガスを炉内に導入するための導入口と、前記加熱
炉本体の下部に開口し炉内で発生した反応生成ガスを前
記キャリアガスと共に炉外へ排出するための排気口と、
該排気口から炉外方向へ延びる排気管と、該排気管の途
中部に設けられ該排気管を流通する反応生成ガスを液化
して排出するためのトラップと、前記加熱炉本体の下部
を加熱して炉内下部を保温する炉内下部保温手段と、前
記排気管における前記トラップよりも上流側を加熱して
管内を保温する管内保温手段と、前記排気管における前
記トラップよりも下流側に設けられ排気圧を略一定に保
つ圧力調整手段とを備えていることを特徴とするポリイ
ミド硬化装置。1. A heating furnace main body for heating and curing polyimide on a substrate, an inlet opening at an upper portion of the heating furnace main body for introducing a carrier gas into the furnace, An exhaust port which is opened at the bottom and exhausts the reaction product gas generated in the furnace together with the carrier gas to the outside of the furnace;
An exhaust pipe extending from the exhaust port to the outside of the furnace, a trap provided at an intermediate portion of the exhaust pipe for liquefying and discharging a reaction product gas flowing through the exhaust pipe, and heating a lower portion of the heating furnace body A lower-furnace heat-retaining means for keeping the lower part of the furnace warm, a heat-retaining means for keeping the inside of the exhaust pipe warmer by heating the upstream side of the trap, and a heat-insulating means provided downstream of the trap in the exhaust pipe. And a pressure adjusting means for keeping the exhaust pressure substantially constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3052713A JP2996524B2 (en) | 1991-03-18 | 1991-03-18 | Polyimide curing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3052713A JP2996524B2 (en) | 1991-03-18 | 1991-03-18 | Polyimide curing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04355922A JPH04355922A (en) | 1992-12-09 |
| JP2996524B2 true JP2996524B2 (en) | 2000-01-11 |
Family
ID=12922548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3052713A Expired - Fee Related JP2996524B2 (en) | 1991-03-18 | 1991-03-18 | Polyimide curing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2996524B2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753891A (en) * | 1994-08-31 | 1998-05-19 | Tokyo Electron Limited | Treatment apparatus |
| JP5010235B2 (en) * | 2006-10-26 | 2012-08-29 | 株式会社ニューフレアテクノロジー | Vapor growth method |
| CN106029217A (en) | 2014-03-06 | 2016-10-12 | 应用材料公司 | Plasma foreline thermal reactor system |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| CN111095513B (en) | 2017-08-18 | 2023-10-31 | 应用材料公司 | High-pressure high-temperature annealing chamber |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| SG11202001450UA (en) | 2017-09-12 | 2020-03-30 | Applied Materials Inc | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| US10720341B2 (en) | 2017-11-11 | 2020-07-21 | Micromaterials, LLC | Gas delivery system for high pressure processing chamber |
| KR20200075892A (en) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | Condenser system for high pressure treatment systems |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | High pressure annealing process for metal containing materials |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
-
1991
- 1991-03-18 JP JP3052713A patent/JP2996524B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04355922A (en) | 1992-12-09 |
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