JP2923841B2 - Electron emitting element, electron source, image forming apparatus using the same, and methods of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to electron-emitting device, an electron source having a plurality of electron-emitting device, and an image forming apparatus and a display apparatus or an exposure apparatus or the like constructed using the electron source, their It relates to a manufacturing method.

[0002]

2. Description of the Related Art A surface conduction electron-emitting device utilizes a phenomenon in which an electron is emitted by passing a current through a conductive thin film formed on an insulating substrate in parallel with the film surface.

As a typical configuration example of a surface conduction electron-emitting device, a conductive thin film such as a metal oxide which connects a pair of device electrodes provided on an insulating substrate is referred to as forming in advance. One in which an electron-emitting portion is formed by an energization process is exemplified. Forming is performed on both ends of the conductive thin film.
It is usually performed by applying a voltage and energizing, locally breaking, deforming or altering the conductive thin film to change the structure,
This is a process for forming an electron emission portion in an electrically high resistance state. The electron emission is performed from the vicinity of a crack generated in the electron emission portion by applying a voltage to the conductive thin film on which the electron emission portion is formed and causing a current to flow.

The above-mentioned surface conduction electron-emitting device has an advantage that it can be formed in a large number over a large area since it has a simple structure and is relatively easy to manufacture. Therefore, various applications for utilizing this feature are being studied. For example, it can be used for an image forming apparatus such as a charged beam source and a display device.

Conventionally, as an example of arranging a large number of surface conduction electron-emitting devices, a surface conduction electron-emitting device is arranged in parallel, and both ends (both device electrodes) of each surface conduction electron-emitting device are wired. (Also referred to as a common wiring). An electron source in which rows connected by a plurality of rows (also referred to as a common wiring) are arranged in a large number of rows (also referred to as a trapezoidal arrangement) (JP-A-64-31332, JP-A-1-2302).
83749, JP-A-2-257552).

In particular, in the case of a display device, a flat panel display device similar to a display device using liquid crystal can be used, and a self-luminous display device that does not require a backlight is used as a surface conduction electron emission device. There has been proposed a display device in which an electron source in which a number of elements are arranged and a phosphor that emits visible light when irradiated with an electron beam from the electron source are combined (US Pat. No. 5,066,883).

[0007]

In patterning the device electrodes of the surface conduction electron-emitting device, if the distance between the device electrodes is 2 to 3 μm or less, an exposure apparatus using a deep UV light source, 3 μm or more, Then, an exposure machine using a UV-based light source is generally used.

[0008] However, in a practically used exposure apparatus, the corresponding capability of a deep UV system is about several inches.
In addition, since it is a direct contact exposure, it cannot be said that it is suitable for a large area.

[0009] From the above, in order to increase the size (increase in area) of an electron source in which a large number of surface conduction electron-emitting devices are arranged and an image forming apparatus using the same, the device electrode of the surface conduction electron-emitting device is required. The length between them (gap length) is preferably 3
μm or more, more preferably several tens μm or more.

On the other hand, the formation of the electron-emitting portion of the surface-conduction type electron-emitting device is performed by an energizing process referred to as the above-described forming. Conventionally, the electron-emitting portion formed on the conductive thin film by this energizing process is formed. In particular, large meandering tends to occur particularly when the distance between the device electrodes is long, the reproducibility of the position and shape of the electron-emitting portion is reduced, and the electron-emitting characteristics between the devices tend to vary.

For this reason, in an electron source in which a large number of surface conduction electron-emitting devices having an increased distance between device electrodes are formed, and in an image forming apparatus using the same, the variation in the amount of electron emission of each electron-emitting device causes However, uniform characteristics could not be obtained, and this was a cause of uneven brightness particularly in an image forming apparatus, resulting in deterioration of image quality.

Further, if the electron emitting portion of the surface conduction electron-emitting device is formed in a meandering manner, the convergence of the electron beam on the electron irradiation surface of a phosphor or the like in the image forming apparatus is deteriorated.
Bright, high-definition images cannot be obtained.

Conventionally, in forming a conductive thin film serving as an electron emission film of a surface conduction electron-emitting device, a solution containing a constituent element of the conductive thin film, for example, an organic metal solution is coated on a substrate by a spinner method. After coating, a method of heating and baking was common.

However, the film produced by the spinner method does not have very high adhesion to the substrate and the device electrodes,
There is a problem in the stability of the surface conduction electron-emitting device. Also, when manufacturing a large-area electron source or image forming apparatus, it is necessary to use a large-sized substrate, but when trying to apply an organometallic solution to the substrate using a spinner method,
It is necessary to rotate such a large-sized substrate at a high speed, and an extremely large-scale apparatus is required. In addition, performing such a task is very dangerous.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to realize a large-area and high-quality electron source and an image forming apparatus.

[0016]

The structure of the present invention made to achieve the above object is as follows.

The first aspect of the present invention is that a pair of a pair formed on a substrate is provided.
An electrode with an electron-emitting portion on a conductive thin film straddling between device electrodes
In the method for manufacturing an electron-emitting device, the pair of device electrodes are formed
Apply a potential difference between the nozzle and the substrate on the substrate
Solution containing the constituent elements of the conductive thin film
Manufacture of an electron-emitting device having a step of atomizing
In the construction method.

[0018] First, the features of the present invention, prior to
The potential difference between the nozzle and the substrate is
As a potential difference between the secondary electrode and
Including providing a potential difference between the device electrodes.

The first aspect of the present invention is further characterized in that the pair of device electrodes is provided with a height difference between a step portion of the device electrode portion.
Are formed to be different from each other .

According to a second aspect of the present invention, there is provided an electron-emitting device obtained by the first manufacturing method of the present invention, wherein the electron is emitted along a step of one of the pair of device electrodes. electron-emitting devices near, characterized in that the discharge portion is formed is, as its features, a surface conduction electron-emitting device
Including that

The third aspect of the present invention is that a straddle is formed between a pair of device electrodes.
An electron-emitting device having an electron-emitting portion in a conductive thin film
In the method for manufacturing an electron source provided on a plate, a plurality of pairs of
An electrode is placed between the nozzle and the substrate on the substrate on which the device electrodes are formed.
The solution containing the constituent elements of the conductive thin film
Electron having a step of spraying from a nozzle
In the method of manufacturing the source.

[0022] The third of the present invention and its features
Thus, the potential difference between the nozzle and the substrate is
Including a potential difference between the device electrode and the device electrode.
No.

The third aspect of the present invention is further characterized in that a potential difference is applied between each pair of the device electrodes.
And, each pair of the device electrodes, the step portion of the device electrode portion
This includes forming the heights to be different from each other .

A fourth aspect of the present invention is an electron source obtained by the third manufacturing method of the present invention, wherein each of the electron-emitting devices has a stepped portion of one of the pair of device electrodes. An electron source is characterized in that an electron emission portion is formed along the electron source.

The fourth feature of the present invention is further characterized by the following.
This includes at least one element row in which a plurality of electron-emitting devices are arranged, and wiring for driving each electron-emitting element is arranged in a matrix or a ladder.

According to a fifth aspect of the present invention, an electron source is manufactured by the third manufacturing method of the present invention , and the obtained electron source is irradiated with an electron beam emitted from the electron source. And a method of manufacturing an image forming apparatus, wherein the method is combined with an image forming member that forms an image according to (1).

A sixth aspect of the present invention resides in an image forming apparatus obtained by the fifth manufacturing method of the present invention.

As described above, the present invention relates to a surface conduction electron-emitting device, an electron source in which a plurality of the surface conduction electron-emitting devices are formed, and an image forming apparatus using the electron source. The structure and operation of will be further described below.

The basic structure of the surface conduction electron-emitting device according to the present invention is as shown in FIG. 1, wherein 1 is a substrate, 2 is an electron-emitting portion, and 3 is a conductive member including an electron-emitting portion. The conductive thin films 4 and 5 are device electrodes.

As the substrate 1, for example, quartz glass, Na
Glass, blue plate glass, blue plate glass, a laminate obtained by laminating SiO ₂ on a blue plate glass by a sputtering method or the like, and ceramics such as alumina.

The materials of the opposing device electrodes 4 and 5 are as follows.
A general conductor material is used, for example, Ni, Cr, Au,
Mo, W, Pt, Ti, Al, Cu, metal or an alloy such as Pd, and Pd, Ag, Au, printed conductors composed of RuO _2, metal or metal oxide such as Pd-Ag and glass, etc. , In ₂ O ₃ —SnO _2, etc., and a semiconductor conductor material such as polysilicon.

The element electrode interval L, the element electrode length W1, the shape of the conductive thin film 3, and the like are appropriately designed depending on the applied form and the like.

The element electrode interval L is usually several hundreds of μm to several hundred μm.
m, photolithography technology that is the basis of the method of manufacturing the device electrode, ie, the performance of the exposure machine and the etching method,
And it is set by the voltage applied between the device electrodes and the electric field strength capable of emitting electrons, especially when it is several μm to several hundred μm, because it matches the performance of large area exposure technology, printing technology, etc. preferable.

The element electrode length W1 and the film thicknesses d1 and d2 are:
It is appropriately set in consideration of the resistance value of the electrodes, restrictions on the arrangement of a large number of arranged electron sources, and the like. Usually, the element electrode length W1 is several μm to several hundred μm, and the element electrode film thickness d1, d2
Is several hundreds of μm to several μm.

In order to obtain good electron emission characteristics, the conductive thin film 3 is particularly preferably a fine particle film composed of fine particles. It is set as appropriate depending on the forming conditions to be performed. The thickness of the conductive thin film 3 is preferably several Å~ several thousand Å, particularly preferably 10A～500A, the resistance value is 10 ² ~10 ⁷ Ω / □ sheet resistance of.

The fine particle film is a film in which a plurality of fine particles are gathered, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other (island shape). ). In the case of a fine particle film, the particle size of the fine particles is preferably from several to several thousand, particularly preferably from 10 to 200.

The main materials constituting the conductive thin film 3 are, for example, Pd, Pt, Ru, Ag, Au, Ti, In, Cu,
Metals such as Cr, Fe, Zn, Sn, Ta, W, and Pb;
dO, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , W
Oxides such as O _x , HfB ₂ , ZrB ₂ , LaB ₆ , Ce
Borides such as B ₆ , YB ₄ , GdB ₄ , TiC, ZrC,
Carbides such as HfC, TaC, SiC, WC, TiN, Z
It is made of nitride such as rN and HfN, semiconductor such as Si and Ge, and carbon.

The electron emitting portion 2 contains a crack, and the electron emission is performed from the vicinity of the crack. The electron-emitting portion 2 including the crack and the crack itself are formed depending on the thickness, the film quality, the material of the conductive thin film 3 and the manufacturing method such as forming conditions described later.

In the surface conduction type electron-emitting device of the present invention, the electron-emitting portion 2 is formed along the step of one of the device electrodes (device electrode 5 in FIG. 1). The formation of the discharge portion 2 will be described later in detail.

The crack may have conductive fine particles having a particle size of several to several hundreds of mm. The conductive fine particles are similar to some or all of the elements of the material constituting the conductive thin film 3. Further, the electron emitting portion 2 including the crack and the conductive thin film 3 in the vicinity thereof may include carbon and a carbon compound.

An example of the manufacturing method of the present invention will be described below with reference to the manufacturing process diagram of FIG. 2 using the surface conduction electron-emitting device of the present invention having the structure shown in FIG. 1 as an example.

1) After sufficiently washing the insulating substrate 1 with a detergent, pure water and an organic solvent, depositing the element electrode material by vacuum deposition, sputtering, or the like, and then depositing the insulating substrate 1 by photolithography. Element electrodes 4 on the surface of
5 is formed (FIG. 2A) . At this time, as shown
One of the device electrodes 4 and 5, for example, the device electrodes 4 and mask, by laminating a further electrode material to only the element electrode 5, should be higher than the step portion of the device electrode 4 and the stepped portions of the device electrodes 5
It is also preferred .

2) An organic metal thin film is formed on the insulating substrate 1 on which the device electrodes 4 and 5 are formed, by spraying an organic metal solution from a nozzle according to the first aspect of the present invention . The organic metal solution is a solution of an organic compound containing a metal as a constituent element of the conductive thin film 3 as a main element. Thereafter, the organic metal thin film is subjected to a heat treatment to remove an organic portion, and then a conductive thin film 3 patterned by lift-off, etching, or the like is formed (FIG. 2B).

3) Subsequently, an energization process called forming is performed. When power is supplied from a power source (not shown) between the device electrodes 4 and 5, a substantially linear electron-emitting portion 2 having a changed structure is formed in a portion of the conductive thin film 3 near the step of the device electrode 5 (see FIG. 1). (FIG. 2 (c)). The conductive thin film 3 is locally destroyed, deformed or deteriorated by this energization process, and the portion where the structure is changed is the electron emitting portion 2.

FIG. 3 shows an example of the voltage waveform of the forming.

The voltage waveform is particularly preferably a pulse waveform.
There are a case where a voltage pulse having a constant pulse peak value is applied continuously (FIG. 3A) and a case where a voltage pulse is applied while increasing the pulse peak value (FIG. 3B).

First, the case where the pulse peak value is a constant voltage will be described. T1 and T2 in FIG. 3A are the pulse width and pulse interval of the voltage waveform, for example, T1 is 1 μsec to 10 msec, T2 is 10 μsec to 100 msec,
The peak value of the triangular wave (peak voltage at the time of forming) is appropriately selected according to the form of the above-mentioned surface conduction electron-emitting device, and is set for several seconds to several tens of minutes under a vacuum surrounding with an appropriate degree of vacuum. Apply. Note that the voltage waveform to be applied is not limited to the illustrated triangular wave, and a desired waveform such as a rectangular wave can be used.

Next, a case where a voltage pulse is applied while increasing the pulse peak value will be described. T1 and T2 in FIG. 3B are the same as those in FIG. 3A, and the peak value of the triangular wave (peak voltage at the time of forming) is increased by, for example, about 0.1 V steps. The application is performed under an appropriate vacuum atmosphere as described in a).

It is to be noted that, during the pulse interval T2, the conductive thin film 3
(See FIG. 1) The element current is measured at a voltage that does not cause local destruction, deformation or alteration, for example, a voltage of about 0.1 V, and a resistance value is obtained. For example, when a resistance of 1 M ohm or more is indicated, forming is performed. finish.

4) Next, it is preferable to perform an activation step on the device after the forming step.

The activation step is, for example, 10 ^-4 to 10 ^-5 T
Similar to the description of the forming process, a process of repeating the application of a pulse with a constant pulse peak value at a degree of vacuum of about orr, and converts carbon and a carbon compound from an organic substance existing in a vacuum into an electron emitting portion. 2 (see FIG. 1), a step in which the state of the device current and emission current can be significantly improved. This activation step is preferably performed while measuring, for example, the device current and the emission current, and is completed when, for example, the emission current is saturated, since it is effective and is preferable. In addition, the pulse peak value in the activation step is preferably a peak value of a driving voltage applied when driving the element.

The carbon and the carbon compound are graphite (indicating both single crystal and polycrystal) and amorphous carbon (indicating amorphous carbon and a mixture thereof with polycrystalline graphite). . Further, the deposited film thickness is preferably 500 ° or less, more preferably 300 ° or less.

5) More preferably, the surface conduction electron-emitting device thus manufactured is operated and driven in a vacuum atmosphere having a higher degree of vacuum than the forming step and the activating step. Further, more preferably, after the heating at 80 ° C. to 150 ° C. in the vacuum atmosphere with the higher degree of vacuum, the operation is driven.

By the step 5), further deposition of carbon and carbon compounds is suppressed, and the device current and the emission current are stabilized.

According to the above-described method for manufacturing an electron-emitting device of the present invention,
Then, the solution containing the constituent elements of the conductive film is supplied from the nozzle.
When spraying, apply a potential difference between the nozzle and the substrate
This improves the adhesion between the substrate and device electrodes and the conductive thin film.
Surface conduction with more stable properties that can be enhanced
A type electron-emitting device is obtained.

In the method for manufacturing an electron-emitting device according to the present invention,
Is the height of the step portion of the pair of device electrodes 4 and 5
The electron emission element of the present invention can be formed differently.
You can get a child. That is, formation of the device electrodes 4 and 5
The conductive thin film 3 formed later is connected to the side having the low step portion.
Good step coverage and high
The step electrode is applied to the device electrode 5 having the
It can be formed with poor coverage. others
In the forming process, the conductive thin film 3
Cracks are generated preferentially in the defective Tep coverage area
Thus, the electron emission portion 2 can be formed. That is, FIG.
As shown in the device shown in FIG.
A substantially linear electron emitting portion 2 can be formed.
is there.

[0057] When forming at different heights a step portion of the device electrode portion, as described above, different thickness d2 of the thickness d1 and the device electrode 4 of the device electrode 5 shown in FIG. 1 May be used, and not the thickness of the device electrode itself,
By forming an insulating layer such as SiO ₂ under one of the device electrodes, the height of the step portion of each device electrode portion may be made different.

[0058]

Forming an asymmetric device electrode structure as described above
Instead of applying a potential difference between the device electrodes.
The electron-emitting device according to the invention can be obtained. That is, the element
By applying a potential difference between the electrodes, the spray
Conductive thin film formed from the above-described organometallic solution,
A dense film with high adhesion to the device electrode side with low potential
To the high-potential element electrode side
Areas with poor step coverage with low density can be formed
Things.

[0060]

As described above, according to the manufacturing method of the present invention, even in the case where the device electrode distance is particularly long, the vicinity of the step portion of one of the device electrode portions, preferably in the vicinity of the substrate surface side of the step portion, is preferable. Since a substantially linear electron emitting portion can be formed along the shape of the device electrode, reproducibility of the position and shape of the electron emitting portion is improved, and device characteristics as described later can be made uniform.

In addition, in the manufacturing method of the present invention, a method of spraying from a nozzle is used for applying an organometallic solution in forming a conductive thin film of a surface conduction electron-emitting device. Since the substrate is not rotated as described above, it is particularly effective when manufacturing an electron source in which a large number of surface conduction electron-emitting devices are arranged over a large area. That is, while avoiding the danger of rotating a large-sized substrate, a large-area electron source and an image forming apparatus using this electron source can be manufactured with a simple apparatus at low cost.

Next, the basic characteristics of the surface conduction electron-emitting device of the present invention obtained as described above will be described below.

FIG. 4 is a schematic configuration diagram showing an example of a measurement evaluation system for measuring the electron emission characteristics of the surface conduction electron-emitting device. The measurement evaluation system will be described first.

In FIG. 4, the same reference numerals as those in FIG. 1 denote the same members. Reference numeral 51 denotes a power supply for applying a device voltage Vf to the device; 50, an ammeter for measuring a device current If flowing through the conductive thin film 3 between the device electrodes 4 and 5; An anode electrode for capturing the emission current Ie to be emitted, 53 is a high voltage power supply for applying a voltage to the anode electrode 54, and 52 is for measuring the emission current Ie emitted from the electron emission portion 5. An ammeter, 55 is a vacuum device, and 56 is an exhaust pump.

The surface conduction electron-emitting device and the anode electrode 54 are installed in a vacuum device 55.
Is equipped with necessary equipment such as a vacuum gauge (not shown),
Measurement and evaluation of the surface conduction electron-emitting device can be performed under a desired vacuum.

The exhaust pump 56 is composed of a normal high vacuum system such as a turbo pump and a rotary pump, and an ultrahigh vacuum system such as an ion pump.
The entire vacuum device 55 and the substrate 1 of the surface conduction electron-emitting device can be heated to about 200 ° C. by a heater (not shown). In this measurement evaluation system, at the stage of assembling a display panel (see 201 in FIG. 7) described later, the display panel and the inside thereof are configured as the vacuum device 55 and the inside thereof, so that the above-described forming step and activation are performed. It can be applied to measurement evaluation and processing in the chemical conversion step.

The basic characteristics of the surface conduction electron-emitting device described below are as follows. The voltage of the anode electrode 54 of the above-mentioned measurement and evaluation system is 1 kV to 10 kV, and the distance H between the anode electrode 54 and the surface conduction electron-emitting device. Is usually set to 2 mm to 8 mm. In view of the fact that the electron beam efficiently reaches the anode electrode 54, the potential of the device electrodes 4 and 5 at the time of measurement is determined by the device electrode on the side where the electron emission portion 2 is formed (the device electrode in FIGS. 1 and 4). It is preferable that the electrode 5) has a higher potential than the other element electrode.

First, the emission current Ie and the device current If,
FIG. 5 shows a typical example of the relationship between element voltages Vf (solid line in FIG. 5).
Shown in In FIG. 5, the emission current Ie is the device current I
Since it is significantly smaller than f, it is shown in arbitrary units.

As is apparent from FIG. 5, the surface conduction electron-emitting device has the following three characteristic characteristics with respect to the emission current Ie.

First, when a device voltage Vf of a surface conduction type electron-emitting device is applied with a device voltage Vf higher than a certain voltage (referred to as a threshold voltage: Vth in FIG. 5), the emission current Ie sharply increases. Below the threshold voltage Vth, the emission current Ie is hardly detected. That is, it is a nonlinear element having a clear threshold voltage Vth with respect to the emission current Ie.

Second, since the emission current Ie has a characteristic (referred to as MI characteristic) that monotonically increases with respect to the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.

Thirdly, the amount of charge emitted by the anode electrode 54 (see FIG. 4) depends on the time during which the device voltage Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time during which the device voltage Vf is applied.

The characteristic shown by the solid line in FIG.
Has the MI characteristic with respect to the element voltage Vf, and the element current If also has the MI characteristic with respect to the element voltage Vf. However, as shown by the broken line in FIG. On the other hand, a voltage control type negative resistance characteristic (referred to as VCNR characteristic) may be exhibited. Which property is shown
It depends on the manufacturing method of the element and the measurement conditions at the time of measurement. However,
Even if the device current If has a VCNR characteristic with respect to the device voltage Vf, the emission current Ie is M with respect to the device voltage Vf.
It has an I characteristic.

Because of the above-described characteristic characteristics of the surface conduction electron-emitting device of the present invention, even in an electron source or an image forming apparatus in which a plurality of devices are arranged, the amount of emitted electrons can be easily adjusted according to an input signal. It can be controlled and can be applied to various fields.

Next, the arrangement of the surface conduction electron-emitting devices in the electron source of the present invention will be described.

The arrangement of the surface conduction electron-emitting devices in the electron source of the present invention is not limited to the ladder arrangement as described in the section of the prior art, or to the arrangement of n Y-directions on m X-direction wirings. An arrangement method in which directional wiring is provided via an interlayer insulating layer, and an X-directional wiring and a Y-directional wiring are connected to a pair of device electrodes of a surface conduction electron-emitting device, respectively. This is hereinafter referred to as a simple matrix arrangement. First, the simple matrix arrangement will be described in detail.

According to the above-mentioned basic characteristics of the surface conduction electron-emitting device, when the applied device voltage Vf exceeds the threshold voltage Vth, the electron is expressed by the peak value and pulse width of the applied pulse voltage. The amount of release can be controlled. On the other hand, below the threshold voltage Vth, almost no electrons are emitted. Therefore, even when a large number of surface conduction electron-emitting devices are arranged, it becomes possible to apply a pulse-like voltage controlled in accordance with an input signal with only a simple matrix wiring and to select individual devices to be driven independently. .

The simple matrix arrangement is based on the above principle, and the structure of an electron source having a simple matrix arrangement as an example of the electron source of the present invention will be further described with reference to FIG.

In FIG. 6, the substrate 1 is a glass plate or the like as described above, and the number and shape of the surface conduction electron-emitting devices 104 arranged on the substrate 1 are appropriately set according to the application. It is.

Each of the m X-direction wirings 102 has external terminals DX1, DX2,.
A conductive metal formed by a vacuum deposition method, a printing method, a sputtering method, or the like is provided thereon. In addition, the material and the material are so set that the voltage is supplied to the many surface conduction electron-emitting devices 104 almost uniformly.
The film thickness and the wiring width are set.

Each of the n Y-directional wirings 103 has external terminals DY1, DY2,... DYn, and is formed in the same manner as the X-directional wiring 102.

The m X-directional wires 102 and the n Y wires
An interlayer insulating layer (not shown) is provided between the direction wirings 103, and is electrically separated to form a matrix wiring. Note that both m and n are positive integers.

The interlayer insulating layer (not shown) is made of SiO ₂ or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like, and has a desired shape on the entire surface or a part of the substrate 1 on which the X-direction wiring 102 is formed. In particular, the film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 102 and the Y-direction wiring 103. Further, the X-direction wiring 102 and the Y-direction wiring 103 are led out as external terminals.

Further, the device electrodes (not shown) facing the surface conduction electron-emitting device 104 are provided with m X-direction wirings 102.
And n Y-directional wirings 103, vacuum deposition method, printing method,
Connection 1 made of conductive metal or the like formed by sputtering or the like
05 are electrically connected. still,
In view of the driving method described later, it is preferable that the electron emission portion is formed on the device electrode side connected to the X-direction wiring 102.

Here, the m X-directional wires 102, the n Y-directional wires 103, the connection 105, and the opposing element electrodes may have some or all of the same constituent elements. Further, they may be different from each other, and are appropriately selected from the above-described materials of the device electrodes and the like. The wires to these device electrodes may be collectively referred to as device electrodes when the material is the same as the device electrodes. The surface conduction electron-emitting device 104 may be formed on either the substrate 1 or an interlayer insulating layer (not shown).

As will be described later in detail, a scanning signal is applied to the X-direction wiring 102 in order to scan a row of the surface conduction electron-emitting devices 104 arranged in the X-direction in accordance with an input signal. A scanning signal applying unit (not shown) is electrically connected.

On the other hand, a modulation signal (not shown) for applying a modulation signal is applied to the Y-direction wiring 103 in order to modulate each of the rows of the surface conduction electron-emitting devices 104 arranged in the Y direction according to an input signal. The signal applying means is electrically connected. The drive voltage applied to each surface conduction electron-emitting device 104 is supplied as a difference voltage between a scanning signal and a modulation signal applied to the surface conduction electron-emitting device.

Next, an example of the image forming apparatus of the present invention using the electron source of the present invention having the above-described simple matrix arrangement will be described with reference to FIGS. 7 is a diagram showing the basic configuration of the display panel 201, FIG. 8 is a view showing the fluorescent film 114, and FIG. 9 is a view showing the display panel 201 of FIG.
FIG. 2 is a block diagram illustrating an example of a driving circuit for performing television display according to a television signal of a system.

In FIG. 7, reference numeral 1 denotes a substrate of an electron source on which the surface conduction electron-emitting device of the present invention is disposed as described above;
Reference numeral 111 denotes a rear plate to which the substrate 1 is fixed, 116 denotes a face plate in which a fluorescent film 114 serving as an image forming member and a metal back 115 are formed on the inner surface of a glass substrate 113, and 112 denotes a support frame. . Rear plate 11
1. The support frame 112 and the face plate 116 are sealed by applying frit glass or the like to these joints and firing at 400 to 500 ° C. for 10 minutes or more in air or nitrogen atmosphere. , An envelope 118.

In FIG. 7, reference numerals 102 and 103 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes 4 and 5 (see FIG. 1) of the surface conduction electron-emitting device 104, respectively, and external terminals Dx1 to Dxm, respectively. , Dy1 to Dyn.

The envelope 118 comprises the face plate 116, the support frame 112, and the rear plate 111, as described above. However, the rear plate 111 is provided mainly for the purpose of reinforcing the strength of the substrate 1, and if the substrate 1 itself has sufficient strength, the rear plate 1
11 is unnecessary, and the support frame 112 may be directly sealed to the substrate 1, and the envelope 118 may be constituted by the face plate 116, the support frame 112, and the substrate 1. Further, by further providing a support (not shown) called a spacer between the face plate 116 and the rear plate 111, the envelope 118 having sufficient strength against atmospheric pressure can be obtained.

The fluorescent film 114 is composed of only the phosphor 122 in the case of a monochrome, but is composed of the phosphor 1 in the case of a color.
Black stripes (FIG. 8A)
Alternatively, it is composed of a black conductive material 121 called a black matrix (FIG. 8B) and the like, and a phosphor 122.
The purpose of providing the black stripes and the black matrix is to provide the three primary color phosphors 12 necessary for color display.
The purpose is to make the color mixture or the like inconspicuous by making the painted portion between the two black, and to suppress a decrease in contrast due to reflection of external light on the fluorescent film 114. Black conductive material 12
As the first material, not only a material mainly containing graphite, which is generally used, but also other materials can be used as long as they are conductive and have little light transmission and reflection.

As a method of applying the phosphor 122 to the glass substrate 113, a precipitation method or a printing method is used regardless of monochrome or color.

Further, as shown in FIG.
A metal back 115 is usually provided on the inner surface side of 4.
The purpose of the metal back 115 is to convert the light emitted from the phosphor 122 (see FIG. 8) toward the inner surface into the face plate 11.
Improving the brightness by specular reflection to the 6th side, acting as an electrode for applying an electron beam accelerating voltage from the high voltage terminal Hv, and damaging by the collision of negative ions generated in the envelope 118. Protection of the phosphor 122 from the laser beam. The metal back 115 can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film 114 after the fluorescent film 114 is manufactured, and then depositing Al by vacuum evaporation or the like.

The face plate 116 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 114 in order to further enhance the conductivity of the fluorescent film 114.

When the above-described sealing is performed, in the case of color, the phosphors 122 of each color must correspond to the surface-conduction electron-emitting devices 104, so that it is necessary to perform sufficient alignment.

The inside of the envelope 118 is evacuated to a degree of vacuum of about 10 ^-6 to 10 ^-7 Torr through an exhaust pipe (not shown) and sealed.

[0099] A state in which the inside of the envelope 118 is set to a degree of vacuum of about 10 ^-6 Torr through an exhaust pipe (not shown) using a normal vacuum system such as a rotary pump or a turbo pump as a pump system. Then, a voltage is applied between the device electrodes 4 and 5 through the outer terminals Dx1 to Dxm and Dy1 to Dyn, and the above-described forming step and activation step are performed to form the electron-emitting portion 2. Then, at 80 to 150 ° C. While baking is performed for 3 to 15 hours, for example, the system may be switched to an ultrahigh vacuum apparatus system using an ion pump or the like as a pump system.
In addition, getter processing may be performed immediately before or after sealing the envelope 118. This is to heat a getter (not shown) disposed at a predetermined position in the envelope 118 by a heating method such as resistance heating or high-frequency heating.
This is a process for forming a deposition film. The getter is usually composed mainly of Ba or the like.
^{This is} for maintaining a degree of vacuum of ^-5 to 10 ^-7 Torr.

The above-described display panel 201 can be driven by a driving circuit as shown in FIG. 9, for example. still,
In FIG. 9, reference numeral 201 denotes the display panel;
Is a scanning circuit, 203 is a control circuit, 204 is a shift register, 205 is a line memory, 206 is a synchronization signal separation circuit, 207 is a modulation signal generator, and Vx and Va are DC voltage sources.

As shown in FIG. 9, the display panel 201
Are connected to an external electric circuit via external terminals Dx1 to Dxm, external terminals Dy1 to Dyn, and a high voltage terminal Hv. Of these, the external terminals Dx1 to Dx
m denotes a surface conduction electron-emitting device provided in the display panel 201, that is, a group of surface conduction electron-emitting devices arranged in a matrix of m rows and n columns in one row (n
A scanning signal for sequentially driving each element is applied.

On the other hand, the external terminals Dy1 to Dyn
A modulation signal for controlling an output electron beam of each element in one row selected by the scanning signal is applied. The high voltage terminal Hv is connected to a DC voltage source Va at, for example, 10 kV.
Is supplied. This is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.

The scanning circuit 202 includes m switching elements (symbols S1 to Sm in FIG. 9) therein, and each of the switching elements S1 to Sm outputs the output voltage of the DC voltage source Vx or 0V (ground level)
Is selected and electrically connected to the external terminals Dx1 to Dxm of the display panel 201.
Each of the switching elements S1 to Sm operates based on a control signal Tscan output from the control circuit 203.
Actually, it can be easily configured by combining elements having a switching function such as an FET, for example.

In the present embodiment, the DC voltage source Vx has a threshold drive voltage applied to the unscanned surface conduction electron-emitting device based on the characteristics (threshold voltage) of the surface conduction electron-emitting device. It is set to output a constant voltage that is equal to or lower than the value voltage.

The control circuit 203 has a function of coordinating the operation of each unit so that appropriate display is performed based on an image signal input from the outside. A synchronization signal Tsyn sent from a synchronization signal separation circuit 206 described below.
Based on c, each control signal of Tscan, Tsft, and Tmry is generated for each unit.

The synchronizing signal separating circuit 206 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside. ) With the circuit,
It can be easily configured. Sync signal separation circuit 206
The sync signal separated by is composed of a vertical sync signal and a horizontal sync signal, as is well known. Here, it is illustrated as Tsync for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as D for convenience.
This is illustrated as an ATA signal. This DATA signal is input to the shift register 204.

The shift register 204 is for serially / parallel-converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 203. Operate. This control signal Tsft is supplied to the shift register 20
4 may be rephrased as the shift clock. Also,
One line of serial / parallel converted image (equivalent to drive data for n elements of surface conduction electron-emitting device)
Are output from the shift register 204 as n parallel signals of Id1 to Idn.

The line memory 205 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate according to a control signal Tmry sent from the control circuit 203. The stored contents are output as I'd1 to I'dn and input to the modulation signal generator 207.

The modulation signal generator 207 is a signal line for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the image data I'd1 to I'dn.
The output signal is applied to the surface conduction electron-emitting devices in the display panel 201 through the external terminals Dy1 to Dyn.

As described above, the surface conduction electron-emitting device has a distinct threshold voltage for electron emission, and electron emission occurs only when a voltage exceeding the threshold voltage is applied. For voltages exceeding the threshold voltage,
The emission current also changes according to the change in the voltage applied to the surface conduction electron-emitting device. By changing the material, configuration, and manufacturing method of the surface conduction electron-emitting device, the value of the threshold voltage and the degree of change of the emission current with respect to the applied voltage may be changed. I can say the thing.

That is, when a pulse-like voltage is applied to the surface conduction electron-emitting device, for example, even if a voltage lower than the threshold voltage is applied, electron emission does not occur, but a voltage exceeding the threshold voltage is applied. In this case, electron emission occurs. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value of the voltage pulse. Second, by changing the width of the voltage pulse, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the surface conduction electron-emitting device according to an input signal, there are a voltage modulation method and a pulse width modulation method. In the case of performing the voltage modulation method, the modulation signal generator 207 generates a voltage pulse having a fixed length, and uses a voltage modulation circuit capable of appropriately modulating the pulse peak value according to input data. In the case of performing the pulse width modulation method, the modulation signal generator 207 generates a voltage pulse having a constant peak value, but a pulse width modulation method circuit capable of appropriately modulating the pulse width according to input data. Used.

The shift register 204 and the line memory 20
Reference numeral 5 may be a digital signal type or an analog signal type, as long as it can perform serial / parallel conversion and storage of an image signal at a predetermined speed.

When using the digital signal system, it is necessary to convert the output signal DATA of the synchronization signal separation circuit 206 into a digital signal. This can be achieved by providing an A / D converter at the output of the synchronization signal separation circuit 206.

In connection with this, the line memory 20
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit provided in modulation signal generator 207 is slightly different.

That is, in the case of a voltage modulation method using a digital signal, a well-known D / A conversion circuit may be used as the modulation signal generator 207, and an amplification circuit or the like may be added as necessary. In the case of a pulse width modulation method using a digital signal, the modulation signal generator 207 includes, for example, a high-speed oscillator, a counter (counter) for counting the number of waves output from the oscillator, and an output value of the counter and an output value of the memory. It can be easily configured by using a circuit in which comparators for comparison are combined. Further, if necessary, an amplifier may be added for amplifying the voltage of the pulse-width-modulated signal output from the comparator to the drive voltage of the surface-conduction electron-emitting device.

On the other hand, in the case of a voltage modulation method using an analog signal, for example, a well-known amplifier circuit using an operational amplifier or the like may be used as the modulation signal generator 207, and a level shift circuit or the like may be added as necessary. You may. In the case of a pulse width modulation method using an analog signal, for example, a well-known voltage-controlled oscillation circuit (VCO) may be used, and a voltage is amplified to a drive voltage of a surface conduction electron-emitting device as necessary. May be added.

The image forming apparatus of the present invention having the display panel 201 and the driving circuit as described above has the external terminals Dx1 to Dx1.
By applying a voltage from Dxm and Dy1 to Dyn, electrons can be emitted from any surface conduction electron-emitting device 104, and a high voltage is applied to the metal back 115 or the transparent electrode (not shown) through the high voltage terminal Hv. To accelerate the electron beam and apply the accelerated electron beam to the fluorescent film 1
14 by the excitation and emission generated by the collision with
A television display can be performed according to a TSC television signal.

The configuration described above is a schematic configuration necessary for obtaining the image forming apparatus of the present invention used for display and the like. For example, detailed portions such as materials of each member are limited to those described above. Instead, it is appropriately selected so as to be suitable for the use of the image forming apparatus. Although the NTSC system has been described as an example of the input signal, the image forming apparatus of the present invention is not limited to this, and may employ another system such as a PAL or SECAM system. For example, a high-definition TV system such as a MUSE system may be used.

Next, an example of the above-described ladder-shaped electron source and an image forming apparatus of the present invention using the same will be described with reference to FIGS. 10 and 11. FIG.

In FIG. 10, reference numeral 1 denotes a substrate; 104, a surface conduction electron-emitting device; and 304, common wirings for connecting the surface conduction electron-emitting devices 104, each of which has ten external terminals D1 to D10. doing.

The surface conduction electron-emitting device 104 is
A plurality is arranged in parallel on the top. This is called an element row. These element rows are arranged in a plurality of rows to constitute an electron source.

By applying an appropriate drive voltage between the common wiring 304 of each element row (for example, the common wiring 304 of the external terminals D1 and D2), each element row can be driven independently. That is, a voltage exceeding the threshold voltage may be applied to an element row where electron beams are to be emitted, and a voltage lower than the threshold voltage may be applied to an element row where electron beams are not desired to be emitted. Such a drive voltage is applied to the common lines D2 to D9 located between the element rows, and the common lines 304 adjacent to each other, that is, the external terminals D adjacent to each other.
2 and D3, D4 and D5, D6 and D7, and D8 and D9 can be formed as a single common wiring.

FIG. 11 is a view showing the structure of a display panel 301 provided with the above-described trapezoidal arrangement of electron sources.

In FIG. 11, reference numeral 302 denotes a grid electrode,
Reference numeral 303 denotes an opening through which electrons pass, D1 to Dm denote external terminals for applying a voltage to each surface conduction electron-emitting device, and G1 to Gn denote terminals connected to the grid electrode 302. Further, the common wiring 304 between each element row is formed on the substrate 1 as an integral same wiring.

In FIG. 11, the same reference numerals as those in FIG. 7 denote the same members, and the main difference between the display panel 201 using the electron sources in the simple matrix arrangement shown in FIG. The point is that a grid electrode 302 is provided between the electrodes 116.

The grid electrode 302 is provided between the substrate 1 and the face plate 116 as described above. The grid electrode 302 is capable of modulating an electron beam emitted from the surface conduction electron-emitting device 104. The grid electrode 302 applies the electron beam to a stripe-shaped electrode provided orthogonally to the ladder-shaped element rows. In order to pass
A circular opening 303 is provided one by one corresponding to each surface conduction electron-emitting device 104.

The shape and arrangement position of the grid electrode 302
It is not always necessary that the openings 303 are formed as shown in FIG. 11, and a large number of openings 303 may be provided in a mesh shape.
4 may be provided around or in the vicinity.

The external terminals D1 to Dm and G1 to Gn are connected to a drive circuit (not shown). A modulation signal for one line of an image is applied to the column of the grid electrode 302 in synchronization with the sequential driving (scanning) of the element rows one by one, so that each electron beam is applied to the fluorescent film 114. The irradiation can be controlled and the image can be displayed line by line.

As described above, the image forming apparatus of the present invention
It can be obtained by using any of the electron sources of the present invention in a simple matrix arrangement or a trapezoidal arrangement, and is suitable not only for the above-described television broadcast display device, but also as a video conference system and a display device such as a computer. A device is obtained. Further, it can be used as an exposure device of an optical printer including a photosensitive drum and the like.

[0131]

The present invention will be further described with reference to the following examples.

Example 1 In this example , a surface conduction electron-emitting device having the structure shown in FIG. 1 and a conventional surface conduction electron-emitting device for comparison were manufactured, and their electron emission characteristics and the like were measured. The experiments performed are described.

Hereinafter, a specific description will be given with reference to FIG. 12, which is a diagram showing a procedure of a method of manufacturing each element of this embodiment . As shown in FIG. 12, hereinafter, the substrate on which the surface conduction electron-emitting device having the structure shown in FIG. 1 is formed is referred to as substrate A, and the substrate on which the comparative surface conduction electron-emitting device is formed is referred to as substrate B. . Incidentally, four elements of the same shape are formed on each substrate.

1) A quartz substrate was used as the substrate 1, which was thoroughly washed with a detergent, pure water and an organic solvent.
Pt was deposited at 300 ° as a device electrode material on each of B by a sputtering method using a mask. Further, with respect to the substrate A, the element electrode 4 was masked, and Pt was laminated by 800 ° (FIG. 12A).

In the substrate B, the thickness of each of the device electrodes 4 and 5 is 300 °. On the other hand, in the substrate A, the element electrode 5 is 1100 ° and the element electrode 4 is 300 °. The element electrode interval L is 100 μm for both substrates A and B.
m.

Thereafter, a lift-off Cr film (not shown) was vacuum-deposited on both the substrates A and B to a thickness of 1000 ° for the purpose of patterning the conductive thin film 3. At this time, the size of the opening of the Cr film corresponding to the width W2 of the conductive thin film 3 was set to 100 μm.

The subsequent steps are common to the substrates A and B.

2) An organic palladium solution (produced by Okuno Pharmaceutical Co., Ltd., ccp-
4230) was sprayed from the nozzle. At this time, 5 kV was applied between the element electrode and the nozzle, and a fine droplet of the organic palladium solution sprayed from the nozzle was charged, accelerated, and sprayed onto the substrate 1. Thereafter, the organic Pd thin film was heated and baked at 300 ° C. for 10 minutes in the air to form a conductive thin film 3 mainly composed of PdO fine particles. This conductive thin film 3
Has a thickness of about 100 ° and a sheet resistance of 5 × 10 ³ Ω / □.
Met.

Thereafter, the Cr film and the conductive thin film 3 were wet-etched with an acid etchant to obtain a conductive thin film 3 having a desired pattern (FIG. 12B).

3) Next, both the substrates A and B are set in the vacuum apparatus 55 of the measurement and evaluation system shown in FIG. 4 and are heated in vacuum to reduce PdO of the conductive thin film 3 to Pd. A voltage was applied between the device electrodes 4 and 5 by a power supply 51 for applying a voltage, and a forming process was performed to form the electron-emitting portion 2 (FIG. 12C). FIG. 3 shows the forming process.
A voltage waveform (a rectangular wave instead of a triangular wave) as shown in FIG.

In this embodiment, T1 in FIG.
Second, T2 was set to 10 ms, and the forming was performed by gradually increasing the peak value of the rectangular wave.

4) Subsequently, the substrates A and B are both vacuum devices 55
And the inside of the vacuum device 55 is maintained at about 10 ^-5 Torr.
The activation process was performed by driving the element using a voltage waveform (a rectangular wave instead of a triangular wave) as shown in FIG. In this embodiment, T1 in FIG.
Second, T2 is 10 ms, and the driving voltage (peak value) is 15 V
And

5) Subsequently, the inside of the vacuum device 55 is about 10 ^-6 T
The device current If and the emission current Ie were measured by driving each of the surface conduction electron-emitting devices on the substrates A and B at orr. After the measurement, the electron emission portions 2 of the substrates A and B were observed by FESEM.

The measurement conditions were as follows: the distance H between the anode electrode 54 and the electron-emitting device was 5 mm, the potential of the anode electrode 54 was 1 kV, the device voltage Vf was 18 V, and the potential applied to each device electrode was The potential of the electrode 5 was set lower than that of the element electrode 4.

As a result, in the element on the substrate B, the element current I
f is 1.2 mA ± 25%, emission current Ie is 1.0 μm
A ± 30%. On the other hand, in the device on the substrate A, the device current If is 1.0 mA ± 5%, and the emission current Ie is 0.9 mA.
5 μA ± 4.5%, and the variation among the devices was significantly reduced.

At the same time, a phosphor was placed on the anode electrode 54, and the shape of the luminescent spot on the phosphor caused by the electron beam emitted from the electron-emitting device was measured. 3 compared to the bright spot of the B element
It was as small as 0 μm.

In each element of the substrates A and B, the FESEM of the electron-emitting portion 2 formed on a part of the conductive thin film 3 was used.
FIG. 13 schematically shows the observation results obtained by the above method. As shown in FIG. 13, in the elements on the substrate A , in each of the four elements, a substantially linear electron-emitting portion 2 is formed near the element electrode 5 having a high step (thick). I was On the other hand, in the conventional device for comparison of the substrate B, the electron emitting portion 2 has 4
Each of the devices has a 50 μm near the center between the device electrodes.
It was formed to meander in a width of about m.

As described above, the level difference of one element electrode portion
Front surface conduction electron-emitting devices that have a electron-emitting portion 2 along the section has less variation in the electron emission characteristics, and the convergence of the electron beams is high very good device. In addition, the substrate A
When the potential applied to the device electrode during device drive was higher than that of the device electrode 4, the bright spot on the phosphor slightly increased.

[Embodiment 2 ] Another embodiment of the method for manufacturing an electron-emitting device of the present invention will be described with reference to FIG.

1) A quartz substrate was used as the substrate 1, and this was sufficiently washed with a detergent, pure water and an organic solvent, and then Pt was deposited on the substrate 1 as a device electrode material at a thickness of 300 ° by a sputtering method using a mask. FIG. 14A). Note that the element electrode interval L is 100 μm.

2) An organic palladium solution (ccp-4230, manufactured by Okuno Pharmaceutical Co., Ltd.) was sprayed from the nozzle onto the substrate 1 while applying 5 V from the DC power supply 11 between the device electrodes 4 and 5. At this time, by applying a 5kV between element electrode and the nozzle, fine droplets of the organic palladium solution was sprayed from the nozzle to accelerate by a static-and sprayed onto the substrate 1. As a result, a dense film is formed on the low potential element electrode 4 side,
On the high-potential element electrode 5 side, a region having a low density and a step coverage defect is formed.

Thereafter, the organic Pd thin film was heated and baked at 300 ° C. for 10 minutes in the air to form a conductive thin film 3 mainly composed of PdO fine particles. The thickness of the conductive thin film 3 was about 100 °, and the sheet resistance was 5 × 10 ³ Ω / □.

Thereafter, unnecessary portions of the conductive thin film were removed by patterning to obtain a conductive thin film 3 having a desired pattern (FIG. 14B).

3) Next, the substrate 1 is placed in the vacuum apparatus 55 of the measurement and evaluation system shown in FIG. 4, and is heated in vacuum to reduce PdO of the conductive thin film 3 to Pd. A voltage was applied between the device electrodes 4 and 5 by a power source 51 for application, and a forming process was performed to form the electron-emitting portion 2 (FIG. 14C). FIG. 3 (b) shows the forming process.
Voltage waveform as shown in (note that it is a square wave instead of a triangle wave)
Was used.

In this embodiment, T1 in FIG.
Second, T2 was set to 10 ms, and the forming was performed by gradually increasing the peak value of the rectangular wave.

After the activation treatment was performed in the same manner as in Example 1, the device characteristics were measured. As a result, the device of this example exhibited the same characteristics as the device of Example 1.

When the electron-emitting portion 2 formed on a part of the conductive thin film 3 of the device of this embodiment was observed by FESEM, it was found that when the organic palladium solution was sprayed from a nozzle and applied, it was exposed to the high potential side. In the vicinity of the device electrode 5 that has been
A substantially linear electron-emitting portion 2 along the line was formed.

[Reference Example 1 ] In this reference example, the present invention
An experiment in which the surface conduction electron-emitting device shown in FIG. 1 manufactured by a method other than the manufacturing method described above and a conventional surface conduction electron-emitting device for comparison are manufactured, and their electron emission characteristics and the like are described.

Hereinafter, a specific description will be given with reference to FIG. 15, which is a view showing a procedure of a method of manufacturing each element of the present embodiment. As shown in FIG. 15, the manufacturing method of the present invention
The substrate on which the surface conduction electron-emitting device of FIG. 1 formed by a method other than that described above is referred to as a substrate A, and the substrate on which the surface conduction electron-emitting device for comparison is formed is referred to as a substrate B. In addition, on each substrate,
Four elements having the same shape are formed.

[0160] 1) A quartz substrate was used as the substrate 1, which after the detergent, thoroughly washed with pure water and an organic solvent, only with respect to the substrate A, after 1500Å deposited SiO _X by sputtering, resist coating, patterning Later, the device electrode 5
Is removed by reactive etching to remove the SiO _x in the region other than the region where the device electrode 5 is to be formed, and the insulating layer 21 made of SiO _x is formed only in the region where the device electrode 5 is to be formed. Next, Pt was deposited as an element electrode material at a thickness of 300 ° on both of the substrates A and B by a sputtering method using a mask (FIG. 15A).

In the substrate B, the height of the step portion of the device electrode portion is 300 ° for both the device electrodes 4 and 5. On the other hand, in the substrate A, the area of the element electrode 5 is 1800 ° and the area of the element electrode 4 is 300 °. The element electrode interval L was 50 μm for the substrate A and 2 μm for the substrate B.

Thereafter, a lift-off Cr film (not shown) was vacuum-deposited on both of the substrates A and B to a thickness of 1000 ° for the purpose of patterning the conductive thin film 3. At this time, the size of the opening of the Cr film corresponding to the width W2 of the conductive thin film 3 was set to 100 μm.

The subsequent steps are common to the substrates A and B.

2) A solution in which an organic complex of Pt is dissolved in a solvent as an organic metal solution is sprayed from a nozzle onto the substrate 1 on which the device electrodes 4 and 5 are formed, thereby forming an organic Pt thin film. The conductive thin film 3 made of a Pt thin film was formed by heating and baking. The thickness of the conductive thin film 3 was about 30 °, and the sheet resistance was 5 × 10 ² Ω / □.

After that, the Cr film and the conductive thin film 3 were wet-etched with an acid etchant to obtain a conductive thin film 3 having a desired pattern (FIG. 15B).

3) Next, in the same manner as in Example 1, the forming process was performed on the elements on both the substrates A and B (FIG. 15).
(C)).

4) Next, in the same manner as in Example 1, activation processing was performed on the elements on both the substrates A and B.

5) Subsequently, the inside of the vacuum device 55 is set to about 10 ^-6 T
The device current If and the emission current Ie were measured by driving each of the surface conduction electron-emitting devices on the substrates A and B at orr. After the measurement, the electron emission portions 2 of the substrates A and B were observed by FESEM.

The measurement conditions were as follows: the distance H between the anode electrode 54 and the electron-emitting device was 5 mm, the potential of the anode electrode 54 was 1 kV, the device voltage Vf was 15 V, and the potential applied to each device electrode was The potential of the electrode 5 was set lower than that of the element electrode 4.

As a result, in the device on the substrate B, the device current I
f is 1.0 mA ± 5%, emission current Ie is 1.0 μA
± 5%. In the device on the substrate A, the device current I
f is 0.95 mA ± 4.5%, and emission current Ie is 0.
It was 92 μA ± 5.0%, and the variation among the devices was almost the same.

At the same time, a phosphor was placed on the anode electrode 54, and the shape of the bright spot on the phosphor by the electron beams emitted from the elements of the substrates A and B was measured. It was equal.

In each element of the substrates A and B, the FESEM of the electron emission portion 2 formed on a part of the conductive thin film 3 was used.
FIG. 16 schematically shows the observation results obtained by the above method. As shown in FIG. 16, in each of the elements on the substrate A , the electron emission section 2 having a substantially linear shape was formed in the vicinity of the element electrode 5 having a high step. Further, in the conventional device for comparison of the substrate B, in each of the four devices, a substantially linear electron emission portion 2 was formed near the central portion between the device electrodes, similarly to the substrate A.

[0173]

[0174] In Reference Example 2 This reference example, FIG. 1
A large number of surface conduction electron-emitting devices of the present invention as shown in FIG.
An example in which the image forming apparatus shown in FIG. 7 is manufactured using the electron source shown in FIG.

FIG. 17 is a plan view of a part of the electron source. FIG. 18 is a sectional view taken along the line AA ′ in the figure. However, in FIGS. 6, 7, 17, and 18, the same reference numerals indicate the same members.

Here, 1 is a substrate, 102 is an X-direction wiring (also called a lower wiring), 103 is a Y-direction wiring (also called an upper wiring), 3 is a conductive thin film, 4 and 5 are device electrodes, and 401
And 402, a contact hole for electrical connection between the element electrode 4 and the lower wiring 102.

[0177] First, a method of manufacturing an electron source according to this reference embodiment will be specifically described in accordance with the order of steps with reference to FIGS. 19 and 20. In addition, the following steps a to h correspond to (a) to FIG.
(D) and (e) to (h) of FIG.

Step a: On a substrate 1 having a 0.5 μm thick silicon oxide film formed on a cleaned blue plate glass by a sputtering method, a Cr film having a thickness of 50 ° and a thickness of 6 mm were formed by vacuum evaporation.
000 of Au is sequentially laminated, and then the photoresist (AZ
1370 Hoechst Co.) is spin-coated and baked with a spinner, and the photomask image is exposed and developed to form a resist pattern for the lower wiring 102, and the Au / Cr deposited film is wet-etched to obtain a desired pattern. Wiring 1 of shape
02 was formed.

Step b: Next, an interlayer insulating layer 401 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering.

Step c: A photoresist pattern for forming the contact hole 402 is formed on the silicon oxide film deposited in the step b, and the photoresist pattern is used as a mask to form the photoresist pattern.
1 was etched to form a contact hole 402. Etching using CF ₄ and H ₂ gas RIE (R
active Ion Etching) method.

Step d: Thereafter, a pattern to be a gap L between the device electrodes 4 and 5 and the device electrode is formed by photoresist, and a 50 ° -thick Ti film and a 40-mm thick film are formed by vacuum evaporation.
0% Ni was sequentially deposited. After the photoresist is dissolved with an organic solvent and the Ni / Ti deposited film is lifted off, the area excluding the device electrode 5 is covered with a photoresist, and Ni is further removed.
The thickness of the device electrode 5 was set to 1400 °. The element electrode interval L is 80 μm and the element electrode width W1
Was formed at 200 μm.

Step e: Upper wiring 10 on device electrodes 4 and 5
After a photoresist pattern of No. 3 was formed, Ti with a thickness of 50 ° and Au with a thickness of 5000 ° were sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form an upper wiring 103 having a desired shape. .

Step f: A 1000 .ANG.-thick C is formed by using a mask having an opening L near the device electrode gap L and its vicinity.
An r film 403 is deposited and patterned by vacuum evaporation, and an organic Pd (ccp-4230 Okuno Pharmaceutical Co., Ltd.) is formed thereon.
Is sprayed from a nozzle to form an organic Pd film,
A heating and baking treatment was performed at 12 ° C. for 12 minutes. The conductive thin film 3 formed of fine particles mainly composed of PdO thus formed has a thickness of 70 ° and a sheet resistance of 2 × 10 ⁴ Ω /.
It was □.

Step g: The Cr film 403 and the baked conductive thin film 3 were etched with an acid etchant to form a conductive thin film 3 having a desired pattern shape.

Step h: A resist was applied to the entire surface, developed using a mask after exposure, and the resist was removed only in the contact hole 402. Thereafter, by vacuum evaporation, Ti with a thickness of 50 ° and Au with a thickness of 5000 ° are sequentially deposited.
Unnecessary portions were removed by lift-off to bury the contact holes 402.

Through the above steps, the lower wiring 102, the interlayer insulating layer 401, the upper wiring 103, the device electrodes 4 and 5, the conductive thin film 3 and the like were formed on the insulating substrate 1, and an unformed electron source was obtained. .

An image forming apparatus was manufactured using the unformed electron source manufactured as described above. The manufacturing procedure will be described below with reference to FIGS.

First, after fixing the substrate 1 of the unformed electron source to the rear plate 111, 5 mm
Above, a face plate 116 (formed by forming a fluorescent film 114 serving as an image forming member and a metal back 115 on the inner surface of a glass substrate 113) is provided.
12, face plate 116, support frame 1
12. A frit glass was applied to the joint of the rear plate 111 and sealed by baking at 400 ° C. for 10 minutes in the air. The fixing of the substrate 1 to the rear plate 111 was also performed using frit glass.

Fluorescent film 114 serving as an image forming member
Has a stripe shape (FIG. 8) to realize color.
(Refer to (a)), a black stripe is formed first, and each color phosphor 12
2 was applied to form a fluorescent film 114. As a material for the black stripe, a material mainly containing graphite, which is generally used, was used.

Further, a metal back 115 was provided on the inner surface side of the fluorescent film 114. The metal back 115 is the fluorescent film 1
After the fabrication of 14, a smoothing process (usually called filming) of the inner surface of the fluorescent film 114 is performed, and then A
1 was produced by vacuum evaporation.

In the face plate 116, a transparent electrode (not shown) was provided on the outer surface side of the fluorescent film 114 in order to further enhance the conductivity of the fluorescent film 114.

At the time of performing the above-mentioned sealing, in the case of color, since the phosphors 122 of each color must correspond to the surface conduction electron-emitting device 104, sufficient alignment was performed.

The atmosphere in the envelope 118 completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the outer terminals Dx1 to Dxm and Dy1 to Dy1 to Dx1 to Dx1. Through the Dyn, a voltage was applied between the device electrodes 4 and 5 of the surface conduction electron-emitting device 104, and the above-described forming process was performed to form the electron-emitting portion 2.

The voltage waveform shown in FIG. 3B (however, a rectangular wave instead of a triangular wave) was used for the forming process. In this embodiment, T1 is 1 ms, T2 is 10 ms, and about 1 ×
The test was performed under a vacuum atmosphere of 10 ^-5 Torr.

The electron-emitting portion 2 thus formed
Was in a state where fine particles mainly composed of palladium element were dispersed and arranged, and the average particle diameter of the fine particles was 50 °.

Next, an activation process was performed using the voltage waveform shown in FIG. 3A (however, a rectangular wave instead of a triangular wave). In this embodiment, T1 is 1 ms, T2 is 10 ms, the wave height is 14 V, the degree of vacuum is 2 × 10 ⁻⁵ Torr, and the device current I is
f, the emission current Ie was measured.

Thereafter, the envelope 1 is passed through an exhaust pipe (not shown).
The inside of the vessel 18 was evacuated to a degree of vacuum of about 10 ^−6.5 Torr, and the exhaust pipe was heated and welded with a gas burner to seal the envelope 118. Finally, gettering was performed by a high-frequency heating method in order to maintain the degree of vacuum after sealing.

Display panel 20 completed as described above
1 (see FIG. 7), terminals Dx1 to Dx
Through m and Dy1 to Dyn, the scanning signal and the modulation signal are respectively converted into electron emission elements 104 by a signal generation unit (not shown).
, And emits electrons when applied to the metal back 115 and the transparent electrode (not shown) through the high voltage terminal Hv.
To apply a high voltage of 5 kV or more to accelerate the electron beam,
The image was displayed by colliding with the fluorescent film 114 to excite and emit light. As a result, a high-definition image corresponding to the high-definition TV image was displayed with less luminance unevenness.

[0199] [Reference Example 3] FIG. 21 is a Reference Example 2
FIG. 7 is a diagram showing an example of an image display device in which a display panel (display panel) 201 (see FIG. 7) is configured to be able to display image information provided from various image information sources such as television broadcasting. is there.

In the figure, reference numeral 201 denotes a display panel;
1 is a display panel driving circuit, 1002 is a display controller, 1003 is a multiplexer, 10
04 is a decoder, 1005 is an input / output interface circuit, 1006 is a CPU, 1007 is an image generation circuit, 10
08, 1009 and 1010 are image memory interface circuits, 1011 is an image input interface circuit,
1012 and 1013 are TV signal receiving circuits, and 1014 is an input unit.

When the present display device receives a signal including both video information and audio information, such as a television signal, it naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits, speakers, and the like related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the features of the present invention are omitted.

Hereinafter, each section will be described along the flow of the image signal.

First, the TV signal receiving circuit 1013 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication.

[0204] The format of the received TV signal is not particularly limited. For example, NTSC, PAL, SE
Various systems such as the CAM system may be used. Further, a TV signal composed of a larger number of scanning lines than these, for example, a so-called high-definition TV including the MUSE system is suitable for taking advantage of the display panel 201 suitable for a large area and a large number of pixels. Signal source.

The T signal received by the TV signal receiving circuit 1013
The V signal is output to the decoder 1004.

The image TV signal receiving circuit 1012 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similarly to the TV signal receiving circuit 1013, the system of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 1004.

Image input interface circuit 1011
Is a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to the decoder 1004.

Image memory interface circuit 1010
Is a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR). The captured image signal is output to a decoder 1004.

Image memory interface circuit 1009
Is a circuit for taking in an image signal stored in a video disk.
04 is output.

Image memory-interface circuit 100
Reference numeral 8 denotes a circuit for capturing an image signal from a device storing still image data, such as a so-called still image disk.
Is output to

The input / output interface circuit 1005 comprises:
This is a circuit for connecting the present display device to an output device such as an external computer, computer network, or printer. In addition to inputting and outputting image data and character / graphic information, control signals and numerical data can be input and output between the CPU 1006 of the display device and the outside in some cases.

The image generation circuit 1007 is provided with image data, character / graphic information input from the outside via the input / output interface circuit 1005, or the CPU 1006.
This is a circuit for generating display image data based on the image data and character / graphic information output from the display unit. Inside this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code,
A circuit necessary for generating an image such as a processor for performing image processing is incorporated therein.

The display image data generated by this circuit is output to the decoder 1004, but may be output to an external computer network or printer via the input / output interface circuit 1005 in some cases.

The CPU 1006 mainly performs operations related to operation control of the display device and generation, selection, and editing of a display image.

For example, a control signal is output to the multiplexer 1003, and image signals to be displayed on the display panel 201 are appropriately selected or combined. At that time, a control signal is generated for the display panel controller 1002 in accordance with an image signal to be displayed, and a display frequency, a scanning method (for example, interlaced or non-interlaced), and the number of scanning lines per screen are displayed. The operation of the device is appropriately controlled. Further, image data and character / graphic information are directly output to the image generation circuit 1007,
Alternatively, an external computer or memory is accessed via the input / output interface circuit 1005 to input image data and character / graphic information.

The CPU 1006 may, of course, be involved in work for other purposes. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, as described above, the computer may be connected to an external computer network via the input / output interface circuit 1005 to perform operations such as numerical calculations in cooperation with external devices.

An input unit 1014 is for a user to input commands, programs, data, and the like to the CPU 1006. For example, in addition to a keyboard and a mouse,
Various input devices such as a joystick, a barcode reader, and a voice recognition device can be used.

The decoder 1004 converts various image signals input from the above 1007 to 1013 into three primary color signals,
Alternatively, it is a circuit for inversely converting a luminance signal into an I signal and a Q signal. As shown by the dotted line in FIG.
004 preferably has an internal image memory. This is for handling television signals that require an image memory when performing inverse conversion, such as the MUSE method.

The provision of the image memory facilitates the display of a still image. Alternatively, in cooperation with the image generation circuit 1007 and the CPU 1006, there is obtained an advantage that image processing and editing including image thinning, interpolation, enlargement, reduction, and synthesis become easy.

A multiplexer 1003 is connected to the CPU 10
A display image is appropriately selected based on a control signal input from the controller 06. That is, the multiplexer 1003 selects a desired image signal from the inversely converted image signals input from the decoder 1004 and outputs the selected image signal to the drive circuit 1001. In that case, by switching and selecting an image signal within one screen display time, it is also possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

Display panel controller 1002
Is a circuit for controlling the operation of the drive circuit 1001 based on a control signal input from the CPU 1006.

[0222] As ones related to the basic operation of the display panel 201, for example, the display panel 201
A signal for controlling the operation sequence of the driving power supply (not shown) is output to the driving circuit 1001. As a method related to the driving method of the display panel 201, a signal for controlling, for example, a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is output to the driving circuit 1001. In some cases, a control signal relating to image quality adjustment such as luminance, contrast, color tone, and sharpness of a display image is supplied to the driving circuit 10.
01 may be output.

The drive circuit 1001 is a circuit for generating a drive signal to be applied to the display panel 201, based on an image signal input from the multiplexer 1003 and a control signal input from the display panel controller 1002. It works.

The function of each section has been described above. With the configuration illustrated in FIG. 21, in this display device, image information input from various image information sources is displayed on the display panel 2.
01 can be displayed. That is, various image signals including television broadcasting are supplied to the decoder 1004.
After being inversely converted in, the signal is appropriately selected in the multiplexer 1003 and input to the drive circuit 1001. On the other hand, the display controller 1002 generates a control signal for controlling the operation of the driving circuit 1001 according to the image signal to be displayed. The drive circuit 1001 applies a drive signal to the display panel 201 based on the image signal and the control signal. Thus, an image is displayed on the display panel 201. These series of operations are totally controlled by the CPU 1006.

In the present image forming apparatus, the image memory built in the decoder 1004 and the image generation circuit 100
7 and the CPU 1006 involve not only displaying a selected one of a plurality of pieces of image information but also enlarging, reducing, rotating, moving, edge emphasizing, thinning out, and interpolating the image information to be displayed. It is also possible to perform image processing such as color conversion, image aspect ratio conversion and the like, and image editing such as synthesis, erasure, connection, replacement, and fitting. Although not particularly described in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Therefore, the present image forming apparatus can be used for a television broadcast display device, a video conference terminal device, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor,
It is possible to combine functions such as game machines with one unit,
It has a very wide range of applications for industrial or consumer use.

FIG. 21 shows only an example of the configuration of an image forming apparatus using a display panel using a surface conduction electron-emitting device as an electron beam source. It goes without saying that the present invention is not limited to this.

For example, among the components shown in FIG. 21, circuits relating to functions that are unnecessary for the purpose of use may be omitted.
Conversely, additional components may be added depending on the purpose of use. For example, when the present image forming apparatus is applied as a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present image forming apparatus, in particular, since the display panel 201 according to the present invention can be easily made thin, the depth of the display device can be reduced. In addition, since it is easy to enlarge the screen, the brightness is high, and the viewing angle characteristics are excellent, it is possible to display an image full of a sense of reality and full of power with good visibility.

[0230]

As described above, the configuration of the conductive thin film
When spraying a solution containing elements from the nozzle,
By applying a potential difference between the plates,
Improved adhesion with conductive thin film, more stable
Can be obtained.

In addition to providing a potential difference between the nozzle and the substrate,
In addition , by spraying a solution containing the constituent elements of the conductive thin film from a nozzle while applying a potential difference between a pair of device electrodes to form a conductive thin film, the vicinity of the step portion of the device electrode portion on the high potential side, preferably An area with poor step coverage can be formed near the substrate surface side . Also, the device electrode
The height of the steps is different from each other and
When spraying is performed, the step cover is
An area with a storage failure can be formed. For this reason,
By the forming process, a crack is preferentially generated in the area of the step coverage failure, so that the electron emission portion can be formed.

For this reason, even when the distance between the device electrodes is increased, the electron emission portion can be formed in accordance with the shape of the device electrode portion. Thus, when a large number of devices were manufactured, the reproducibility of the position and shape of the electron-emitting portion was high, and the variation in the electron-emitting characteristics among the devices was reduced.

[0233]

In addition, when manufacturing an electron source in which a large number of surface conduction electron-emitting devices are arranged over a large area, it is not necessary to rotate a large-sized substrate at high speed, and it is possible to manufacture safely and inexpensively with a simple apparatus. It has become possible.

Further, in the above-mentioned large-area electron source, uniformity of the electron emission characteristics of each surface conduction electron-emitting device is realized, and in the image forming apparatus using the above-mentioned electron source, image quality such as uneven brightness is obtained. The problem of the electron beam spreading due to the reduction and meandering of the electron emission portion was also solved, and the image quality was greatly improved.

In particular, the potential applied to the pair of device electrodes when driving the surface conduction electron-emitting device of the present invention is preferably
The convergence of the electron beam emitted from the electron-emitting portion can be improved by setting the element electrode on the side where the electron-emitting portion is disposed in the vicinity at a low potential. For this reason, by applying the above-described potential relationship at the time of driving to the electron source and the image forming apparatus, the emission luminescent spot formed on the image forming member is further enhanced in definition.

As described above, according to the present invention, a large-area flat display which is compatible with a color image, has high definition, and has high display quality is realized.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration example of a basic surface conduction electron-emitting device of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of a method of manufacturing the surface conduction electron-emitting device of FIG.

FIG. 3 is an example of a voltage waveform used for forming processing.

FIG. 4 is a schematic diagram of a measurement evaluation system for measuring electron emission characteristics of a surface conduction electron-emitting device.

FIG. 5 is a diagram showing a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf of the surface conduction electron-emitting device of the present invention.

FIG. 6 is a schematic view of an electron source having a simple matrix arrangement.

FIG. 7 is a partially cutaway perspective view illustrating a schematic configuration of a display panel including an electron source in a simple matrix arrangement.

FIG. 8 is a diagram illustrating a configuration example of a fluorescent film used for a display panel.

FIG. 9 is a block diagram illustrating an example of a driving circuit of an image forming apparatus that performs image display according to an NTSC television signal.

FIG. 10 is a schematic view of a trapezoidal arrangement of electron sources.

FIG. 11 is a partially cutaway perspective view showing a schematic configuration of a display panel provided with a trapezoidal arrangement of electron sources.

FIG. 12 is a cross-sectional view for explaining a manufacturing step of the surface conduction electron-emitting device shown in Example 1.

FIG. 13 is a plan view for explaining the shape of an electron emission portion of the surface conduction electron-emitting device shown in Example 1.

FIG. 14 is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device shown in Example 2 .

FIG. 15 is a cross-sectional view for explaining a manufacturing step of the surface conduction electron-emitting device shown in Reference Example 1 .

FIG. 16 is a plan view for explaining the shape of an electron-emitting portion of the surface-conduction electron-emitting device shown in Reference Example 1 .

FIG. 17 is a partial plan view of an electron source having a simple matrix arrangement shown in Reference Example 2.

18 is a partial sectional view of the electron source shown in FIG.

19 is a cross-sectional view for explaining a manufacturing process of the electron source in FIG.

20 is a cross-sectional view for explaining a manufacturing process of the electron source in FIG.

FIG. 21 is a block diagram of the image forming apparatus shown in Reference Example 3.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Electron emission part 3 Conductive thin film 4, 5 Device electrode 11 DC power supply 21 Insulating layer 50 Ammeter for measuring device current If flowing through conductive thin film 3 51 Device voltage Vf is applied to surface conduction type electron-emitting device. Power supply for application 52 Ammeter for measuring emission current Ie emitted from electron emission unit 2 53 High voltage power supply for applying voltage to anode electrode 54 54 Captures electrons emitted from electron emission unit 2 Anode electrode 55 Vacuum device 56 Exhaust pump 102 X-direction wiring 103 Y-direction wiring 104 Surface conduction electron-emitting device 105 Connection 111 Rear plate 112 Support frame 113 Glass substrate 114 Fluorescent film 115 Metal back 116 Face spray G Hv high voltage terminal 118 envelope 121 black conductive material 122 phosphor 201 display panel 202 Checking circuit 203 Control circuit 204 Shift register 205 Line memory 206 Synchronous signal separation circuit 207 Modulation signal generator Va DC voltage source Vx DC voltage source 301 Display panel 302 Grid electrode 303 Opening through which electrons pass 304 Surface conduction electron-emitting device Common wiring for wiring 104 401 Interlayer insulating film 402 Contact hole 403 Cr film 1001 Display panel 201 drive circuit 1002 Display controller 1003 Multiplexer 1004 Decoder 1005 Input / output interface circuit 1006 CPU 1007 Image generation circuit 1008, 1009, 1010 Image memory interface circuit 1011 Image input interface circuit 1012, 1013 TV signal receiving circuit 1014 Input unit

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takeo Tsukamoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-2-60025 (JP, A) JP-A-1 JP-A-296532 (JP, A) JP-A-6-231678 (JP, A) JP-A-63-33557 (JP, A) JP-A-59-55368 (JP, A) JP-A-63-93366 (JP, A) ) Jikken 34-19758 (JP, Y1) (58) Field surveyed (Int. Cl. ⁶ , DB name) H01J 1/30 H01J 9/02 H01J 31/12

Claims (15)

(57) [Claims] 1. A method of manufacturing an electron-emitting device having an electron-emitting portion in a conductive thin film extending between a pair of device electrodes formed on a substrate, comprising: a nozzle having a pair of device electrodes; Board and
A method of manufacturing an electron-emitting device characterized by being a potential difference of a solution containing the constituent elements of the conductive thin film comprises a step of spraying from the nozzle during. 2. The method according to claim 1, wherein the potential difference between the nozzle and the substrate is
Given as a potential difference between the nozzle and the element electrode.
A method of manufacturing an electron-emitting device according to claim 1, characterized in that that. 3. A method for applying a potential difference between said device electrodes.
The method for manufacturing an electron-emitting device according to claim 2, wherein
Law. 4. The method according to claim 1, wherein the pair of device electrodes is
The feature is that the heights of the steps are different from each other
The method for manufacturing an electron-emitting device according to claim 1. 5. A electron-emitting device obtained by the production method according to any one of claims 1-4, the electron emission portion along the step portion of one element electrode portions of the pair of element electrodes An electron-emitting device characterized by being formed. 6. The electron-emitting device according to claim 5 , wherein the electron-emitting device is a surface conduction electron-emitting device. 7. A method of manufacturing an electron source comprising a plurality of electron-emitting devices having an electron-emitting portion on a conductive thin film extending between a pair of device electrodes, the method comprising: And the nozzle and substrate
Method of manufacturing an electron source, characterized in that it comprises a step of the solution containing the constituent elements of the conductive thin film while a potential difference is sprayed from the nozzle during. 8. The method according to claim 8, wherein a potential difference between the nozzle and the substrate is
Given as a potential difference between the nozzle and the element electrode.
The method for manufacturing an electron source according to claim 7, wherein
Law. 9. A potential difference is applied between each pair of said device electrodes.
9. The method of manufacturing an electron source according to claim 8, wherein
Law. 10. A device electrode part comprising:
Are formed so that the heights of the step portions are different from each other.
The method for manufacturing an electron source according to claim 7, wherein 11. An electron source obtained by the method according to claim 7, wherein each of the electron-emitting devices is formed along a step of one of the pair of device electrodes. An electron source, wherein an electron emitting portion is formed. 12. The electron source according to claim 1, wherein the electron source has at least one element row in which a plurality of electron-emitting devices are arranged, and wirings for driving each electron-emitting element are arranged in a matrix. Item 12. The electron source according to item 11 . 13. The electron source has at least one element row in which a plurality of electron-emitting devices are arranged, and wirings for driving each electron-emitting element are arranged in a ladder shape. An electron source according to claim 11 . 14. An image forming method comprising: producing an electron source by the production method according to claim 7; and forming an image by irradiating the obtained electron source with an electron beam emitted from the electron source. A method for manufacturing an image forming apparatus, wherein the method is combined with a member. 15. An image forming apparatus obtained by the manufacturing method according to claim 14 .