JP2842753B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip semiconductor device having a high density and a large capacity by laminating semiconductor elements, and more particularly to a semiconductor device applied to space-borne equipment which requires vibration resistance and heat resistance.

[0002]

2. Description of the Related Art In recent years, in order to increase the density and capacity of a semiconductor device, a semiconductor device in which a plurality of semiconductor elements are stacked in a thickness direction has been proposed. For example, Japanese Patent Application Laid-Open No. 2-1981
As shown in FIG. 5, a semiconductor device 31 is mounted on a TAB (tape automated bonding) tape 32 to form a TAB device 30 as shown in FIG. TAB is inserted in the connector 33 formed in a rectangular frame shape with the same thickness.
The device 30 is mounted. Then, a plurality of connectors 33 each having the TAB device 30 mounted thereon are stacked, and the conductors 34 provided on the front and back surfaces of the peripheral portions of the upper and lower connectors 33 are connected to each other. And make a required circuit. By mounting such a configuration on the motherboard 22, for example, and connecting the conductor 34 to the connection pattern 23, the area occupied by the semiconductor elements on the motherboard that configures the semiconductor device by mounting a plurality of semiconductor elements can be reduced. In addition, the density and capacity of the semiconductor device can be increased. Further, by using the connector, mutual interference between the stacked semiconductor elements can be prevented, and electrical connection between the semiconductor elements can be arbitrarily performed.

[0003]

In the semiconductor device shown in FIG. 5, a plurality of connectors 33 having a TAB device 30 mounted thereon are provided.
And the electrical connection is made by connecting the conductors 34 at the periphery thereof, so that the plurality of stacked connectors 33 are integrally formed, and the entire semiconductor device has a rigid structure. Become. For this reason, when such a semiconductor device is used for space-borne equipment, the shock applied to the equipment is transmitted to the connector 33 as it is, and the portion of the conductor 34 that electrically connects the connectors may be damaged. There is. In addition, the vibration accompanying the impact is transmitted into the TAB device 30 via the connector 33, and may damage the semiconductor element 31, or may damage the connection between the semiconductor element 31 and the TAB tape 32. Further, in the semiconductor device, the connector 33 is formed in a frame shape, and T
Since the AB device 30 is mounted, the overall height of the semiconductor device can be reduced, but the stacked semiconductor elements 31 are arranged to face each other, and the heat generated by each semiconductor element 31 In addition, the heat may be trapped inside the connector 33 and the heat radiation effect may be reduced, thereby deteriorating the heat resistance of the semiconductor element. An object of the present invention is to provide a semiconductor device having improved vibration resistance and improved heat resistance, which can be adopted for space-borne equipment.

[0004]

According to the present invention, there is provided a unit module having a semiconductor module mounted on a plate-shaped module plate and having a connection pattern connected to the semiconductor element on the front and back surfaces thereof, and a plurality of unit units. And an anisotropic conductive buffer member that is interposed between them and electrically connects the connection patterns of the unit units to each other. Here, the module plate is formed in a rectangular plate shape, has connection patterns mutually connected by through holes on the front and back surfaces of its peripheral portion, and has a concave portion in the center portion, and the semiconductor element is The lead is connected to the connection pattern while being mounted on the lead supported by the tape and housed in the recess of the module plate. Further, the anisotropic conductive buffer member is made of an anisotropic conductive resin or an anisotropic conductive rubber, and absorbs shock and vibration between the unit units.

[0005]

Next, the present invention will be described with reference to the drawings. FIG. 1 shows one of the unit units according to an embodiment of the present invention.
FIG. 2 is a plan view and a sectional view of the assembled state. In these figures, here, for example, a memory device having a bare chip configuration is used as a semiconductor element to be mounted.
Are mounted on the TAB tape 2 and configured as a TAB device 10. The TAB tape 2 has a lead 4 of a required pattern formed on a film carrier 3 made of a polyimide resin, and the semiconductor element 1 is connected to an inner lead portion of the lead. The lead 4 is made of Cu, and its surface is plated with Ni / Au. Alternatively, Cu is plated with solder. In addition, the semiconductor element 1 has a bump 5
Alternatively, it is connected to the lead 4 by a flip chip method.
The portion of the semiconductor element 1 on the TAB tape 2 side is covered with a protective resin 6, and the outer lead portion of the lead 4 protrudes around the protective resin 6 (here, two opposing sides).

The TAB device 10 is mounted on a module plate 11. The module plate 11 is made of an insulating plate material that is slightly thicker than the
It is formed in a rectangular shape slightly larger than the AB device 10, and a concave portion 12 is formed in a central portion excluding a peripheral portion thereof. In addition, connection patterns 13 and 14 made of a conductive film are formed on the front and back surfaces of the two opposing sides of the peripheral portion. These connection patterns 13 and 14 on the front and back surfaces are selectively electrically connected by through holes 15 formed in the thickness direction of the module plate 11. In addition, positioning marks 16 used for positioning when a plurality of module plates 11 are stacked are provided at two places on the peripheral surface as described later. The material of the module plate 11 has a high heat resistance and a high thermal conductivity as much as possible.

When the TAB device 10 is mounted on the module plate 11, the TAB device 10 is positioned in the concave portion 12 of the module plate 11, and the semiconductor element 1 is bonded with a highly heat-conductive adhesive 17. Is connected to the inner surface of the recess 12. The outer leads of the leads 4 arranged on the two opposite sides of the TAB tape 2 are connected to the connection patterns 13 on the front surface of the module plate 11 by soldering or the like. Thus, a unit unit 20 including the TAB device 10 and the module plate 11 is configured.

FIG. 3 is a partially exploded perspective view of a semiconductor device constructed by stacking a plurality of the unit units 20 described above.
FIG. 4 is a sectional view of the assembled state. As shown in these figures, the semiconductor device includes a plurality of unit units 20,
They are stacked with a rectangular frame-shaped buffer member 21 interposed therebetween. The buffer member 20 is made of a relatively thick anisotropic conductive resin or anisotropic conductive rubber, and is configured to conduct electricity only in the vertical direction while maintaining the insulating state in the horizontal direction. . For example, a so-called zebra connector in which a silicon resin is formed in a rectangular frame shape, and a plurality of conductive portions are arranged and formed by mixing carbon into the silicon resin in a vertical stripe shape may be used.

After these buffer members 21 are interposed between the plurality of unit units 20, the upper and lower module plates 11 and the buffer members 2 are bonded by an adhesive in a side area where the connection patterns 13 and 14 of the module plate 11 do not exist.
1 are bonded to each other to make a mechanical connection, and the contact between the connection patterns 13 and 14 of the module plate 11 and the buffer member 21 causes electrical connection between the upper and lower unit units 20 sandwiching the buffer member 21. Connection. In the semiconductor device assembled in this manner, the unit unit 20 disposed at the lowermost stage is bonded to the motherboard 22, and the connection pattern 14 is electrically connected to the connection pattern 23 of the motherboard 22.

[0010] According to the semiconductor device having this configuration, a plurality of semiconductor elements are stacked, so that the mother boat 2
2, the area occupied by each semiconductor element on the semiconductor device 2 can be reduced, and the density and capacity of the semiconductor device can be increased. In addition, since each semiconductor element 1 is configured as a TAB device 10 and mounted on the module plate 11 to form a unit unit, an arbitrary number of arbitrary unit units 20 may be used and stacked to obtain a required scale. A semiconductor device can be easily configured.

Further, when a plurality of unit units 20 are stacked, the buffer member 21 is interposed between the module plates 11, so that, for example, even when an external impact or a vibration accompanying the external impact is applied to the semiconductor device, the semiconductor device is subjected to the same. Shock and vibration are absorbed by deformation of the cushioning member 21 and the module plate 11
And transmission to the semiconductor element 1 in the TAB device 10 is reduced. Thereby, the module plate 1
1 and the TAB device 10 can be prevented from being damaged and the semiconductor element itself can be prevented from being damaged, and the vibration resistance can be improved.

In each of the unit units 20, the semiconductor element 1 is provided in the concave portion 12 of the module plate 11. Therefore, even when the unit units 20 are stacked, the upper and lower semiconductor elements are directly opposed to each other. And the bottom of the module plate 11 always exists between them. For this reason, the heat generated in each semiconductor element 1 does not directly affect each other, and the heat generated in the semiconductor element 1 is radiated from the side surface through the module plate 11 and the semiconductor element The semiconductor device can be prevented from being damaged by being heated, and the heat resistance of the semiconductor device can be improved. As a result, even when this semiconductor device is used in space-borne equipment, it is possible to configure a long-life, highly-reliable equipment.

In addition, as a configuration in which a plurality of unit units and a buffer member are laminated and fixed, a clamper that sandwiches the mother unit and the uppermost unit unit may be used. With this clamper, each unit unit is mechanically connected, and the upper and lower unit units and the buffer member are pressed to be electrically connected. The use of this clamper facilitates replacement of the unit as compared with the case of integration by bonding, which is advantageous for maintenance.

[0014]

As described above, according to the present invention, a plurality of unit units each having a structure in which a semiconductor element is mounted on a module plate are laminated, and respective connection patterns are mutually electrically connected between the unit units. Since the configuration is such that a buffer member of anisotropic conductivity is interposed, the semiconductor element is mounted in a laminated structure to increase the mounting density, while shocks and vibrations applied to the unit are absorbed by the buffer member, Prevents shock and vibration from being applied,
The vibration resistance of the semiconductor device can be improved. Also,
A concave portion is provided in the module plate that constitutes the unit unit, and the semiconductor elements are embedded in the concave portion. Therefore, even when the unit units are stacked, each semiconductor element is not directly opposed to each other, and the influence of heat between the semiconductor elements is reduced. In addition, the heat generated in the semiconductor element can be radiated through the module plate, and the heat resistance of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a partially exploded perspective view of a unit according to a semiconductor device of the present invention.

FIG. 2 is a plan view and a sectional view of the unit unit of FIG. 1;

FIG. 3 is a partially exploded perspective view of a semiconductor device including a plurality of unit units.

FIG. 4 is a sectional view of the semiconductor device of FIG. 3 in an assembled state;

FIG. 5 is a cross-sectional view illustrating an example of a conventional semiconductor device having a laminated structure.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 TAB tape 4 Lead 10 TAB device 11 Module plate 12 Depression 13, 14 Connection pattern 20 Unit unit 21 Buffer member (anisotropic conductive resin or rubber) 22 Motherboard 23 Connection pattern

Claims (2)

(57) [Claims] A unit plate having a semiconductor element mounted on a rectangular plate-shaped module plate; and an anisotropic conductive buffer member interposed between the plurality of unit units .
The module plate has through holes on its front and back surfaces.
Has connection patterns interconnected by holes
And a concave part in the center, and the semiconductor element is
Mounted on a supported lead and housed in the recess
With the lead connected to the connection pattern
Each connection pattern of the unit unit is anisotropic conductive
A semiconductor device electrically connected to each other by the buffer member . 2. The semiconductor device according to claim 1, wherein the anisotropic conductive buffer member is made of an anisotropic conductive resin or an anisotropic conductive rubber, and absorbs shock and vibration between unit units.