JP2807844B2 - Substrate heating device - Google Patents
Substrate heating deviceInfo
- Publication number
- JP2807844B2 JP2807844B2 JP21403090A JP21403090A JP2807844B2 JP 2807844 B2 JP2807844 B2 JP 2807844B2 JP 21403090 A JP21403090 A JP 21403090A JP 21403090 A JP21403090 A JP 21403090A JP 2807844 B2 JP2807844 B2 JP 2807844B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- heating
- substrate
- hot plate
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Control Of Temperature (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、基板加熱装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a substrate heating apparatus.
（従来の技術） 一般に、半導体デバイスの製造工程においては、半導
体ウエハなどの基板を所定温度に加熱して処理する工程
を必要とする場合があり、このような加熱処理工程に基
板加熱装置が用いられている。(Prior Art) Generally, in a process of manufacturing a semiconductor device, a process of heating a substrate such as a semiconductor wafer to a predetermined temperature may be required, and a substrate heating apparatus is used in such a heat treatment process. Have been.
例えば、精密写真転写技術を用いて、回路パターンを
転写する工程においては、例えば、半導体ウエハにフォ
トレジスト液を塗布した後などにおいて、ベーキングな
どと称される加熱処理が実施される。For example, in a step of transferring a circuit pattern using a precise photo transfer technique, a heating process called baking is performed, for example, after a photoresist liquid is applied to a semiconductor wafer.
このような加熱処理を実施する基板加熱装置は、例え
ば抵抗加熱ヒータなどの加熱手段を備えた熱板、この熱
板の温度を検知する温度センサ、この温度センサからの
信号を参照信号として抵抗加熱ヒータに供給する電力を
調節し温度制御する温度制御装置などから構成されてい
る。A substrate heating apparatus that performs such a heating process includes, for example, a heating plate provided with heating means such as a resistance heating heater, a temperature sensor for detecting the temperature of the heating plate, and a resistance heating using a signal from the temperature sensor as a reference signal. It is composed of a temperature controller for adjusting the power supplied to the heater and controlling the temperature.
そして、上記温度制御装置により所定温度に制御され
た熱板上に半導体ウエハを載置して加熱処理を実施す
る。また、熱板上に設けられた微小なピン上に半導体ウ
エハを載置することにより、熱板と半導体ウエハとの間
に微小なギャップを設け、熱板と半導体ウエハとを接触
させず、近接させた状態で加熱する基板加熱装置もあ
る。Then, the semiconductor wafer is placed on a hot plate controlled to a predetermined temperature by the temperature control device, and a heating process is performed. In addition, by placing the semiconductor wafer on the minute pins provided on the hot plate, a minute gap is provided between the hot plate and the semiconductor wafer, and the hot plate and the semiconductor wafer are brought into close contact with each other without contact. There is also a substrate heating device for heating in a state where the substrate is heated.
（発明が解決しようとする課題） しかしながら、近年半導体デバイスは、高集積化され
る傾向にあり、その回路パターンは、益々微細化されて
いる。このため、上記説明の従来の基板加熱装置におい
ても、さらに高精度な処理を実施可能とすることが望ま
れていた。(Problems to be Solved by the Invention) However, in recent years, semiconductor devices tend to be highly integrated, and circuit patterns thereof have been increasingly miniaturized. For this reason, it has been desired that even the above-described conventional substrate heating apparatus can carry out processing with higher accuracy.
本発明は、かかる従来の事情に対処してなされたもの
で、従来に較べて正確な熱処理を実施することのできる
基板加熱装置を提供しようとするものである。The present invention has been made in view of such a conventional situation, and has as its object to provide a substrate heating apparatus capable of performing a heat treatment more accurately than in the past.
［発明の構成］ （課題を解決するための手段） すなわち本発明は、基板に加熱手段を接触あるいは近
接させて該基板を加熱する基板加熱装置において、前記
加熱手段の温度を検出する温度検出手段と、この温度検
出手段で検出された温度と前記基板の加熱時間との積算
値を算出し、この積算値が所定の値となるよう前記加熱
時間を制御する制御手段とを設けたことを特徴とする。[Means for Solving the Problems] That is, according to the present invention, in a substrate heating apparatus for heating a substrate by bringing the heating means into contact with or close to the substrate, a temperature detecting means for detecting a temperature of the heating means And control means for calculating an integrated value of the temperature detected by the temperature detecting means and the heating time of the substrate, and controlling the heating time so that the integrated value becomes a predetermined value. And
（作 用） 本発明者等が詳査したところ、基板加熱装置において
は、加熱手段（例えば熱板）の温度を予め設定された所
定温度に制御しているものの、加熱処理の開始および終
了時に、基板（例えば半導体ウエハ）を熱板にロード・
アンロードした際に、熱板の温度がある程度変動し、こ
の変動が収まるまでには、ある程度の時間を要する。こ
のため、所定時間加熱処理を実施しても、この間に熱板
の温度が変動しているので、処理状態がこの温度変動に
よって変化してしまう。また、このような温度変動は、
各種条件、例えばロードされる半導体ウエハの温度、処
理間隔、処理時間などによって変るので、その抑制が困
難である。(Operation) The present inventors have conducted a detailed investigation and found that in the substrate heating apparatus, the temperature of the heating means (for example, a heating plate) is controlled to a predetermined temperature, but the temperature is not controlled when the heating process starts and ends. Loading a substrate (eg, a semiconductor wafer) on a hot plate
Upon unloading, the temperature of the hot plate fluctuates to some extent, and it takes a certain amount of time for this variation to subside. For this reason, even if the heat treatment is performed for a predetermined time, the temperature of the hot plate fluctuates during this time, so that the processing state changes due to the temperature fluctuation. Also, such temperature fluctuations
Since it varies depending on various conditions, for example, the temperature of the semiconductor wafer to be loaded, the processing interval, the processing time, and the like, it is difficult to suppress it.
そこで、本発明の基板加熱装置では、制御手段によ
り、温度検出手段で検出された温度と基板の加熱時間と
の積算値を算出し、この積算値が所定の値となるよう基
板の加熱時間を制御する。Therefore, in the substrate heating device of the present invention, the control unit calculates an integrated value of the temperature detected by the temperature detecting unit and the substrate heating time, and sets the substrate heating time so that the integrated value becomes a predetermined value. Control.
基板に対する熱エネルギーは、温度、時間の積算量に
より決定される。したがって、温度変動により生じるエ
ネルギー変動を、時間により補正することにより、基板
に加えられるエネルギー量を一定化することができる。The thermal energy for the substrate is determined by the integrated amount of temperature and time. Therefore, the amount of energy applied to the substrate can be made constant by correcting the energy fluctuation caused by the temperature fluctuation with time.
これにより、処理温度が変動しても、基板に供給され
る総熱量が一定となり、従来に較べて正確な処理を実施
することができる。Thus, even if the processing temperature fluctuates, the total amount of heat supplied to the substrate becomes constant, and the processing can be performed more accurately than in the past.
（実施例） 以下、本発明を、フォトレジストを塗布された半導体
ウエハなどの加熱処理を行う基板加熱装置に適用した一
実施例を、図面を参照して説明する。(Example) Hereinafter, an example in which the present invention is applied to a substrate heating apparatus that performs a heating process on a semiconductor wafer or the like coated with a photoresist will be described with reference to the drawings.
第１図に示すように、基板加熱装置１には、上面に半
導体ウエハ２を載置可能に形成された円板状の熱板３が
設けられている。この熱板３内には、発熱体例えば抵抗
加熱ヒータ（図示せず）が設けられており、この抵抗加
熱ヒータには、電力を供給するための電力供給装置４が
接続されている。また、熱板３内には、熱板３の温度
（半導体ウエハ２載置面近傍の温度）を検出するための
温度センサ５が設けられている。As shown in FIG. 1, the substrate heating apparatus 1 is provided with a disk-shaped heating plate 3 on the upper surface of which a semiconductor wafer 2 can be placed. A heating element, for example, a resistance heater (not shown) is provided in the heating plate 3, and a power supply device 4 for supplying electric power is connected to the resistance heater. Further, a temperature sensor 5 for detecting the temperature of the hot plate 3 (the temperature near the mounting surface of the semiconductor wafer 2) is provided in the hot plate 3.
さらに、熱板３には、上下方向に貫通する如く、複数
例えば３つの透孔６が設けられており、これらの透孔６
には、それぞれピン７が設けられている。また、熱板３
は、駆動機構８に接続されており、図中矢印で示すよう
に、ピン７に対して、上下動可能に構成されている。そ
して、半導体ウエハ２を熱板３上にロード・アンロード
する際に、熱板３を下降させて、ピン７を熱板３上に突
出させ、ピン７上に半導体ウエハ２を支持し、半導体ウ
エハ２と熱板３との間に、搬送装置のウエハ支持機構
（図示せず）を挿入するための間隔を設けるよう構成さ
れている。この駆動機構８は、駆動制御部９によって制
御される。Further, a plurality of, for example, three through holes 6 are provided in the hot plate 3 so as to penetrate in the vertical direction.
Are provided with pins 7 respectively. In addition, hot plate 3
Is connected to a drive mechanism 8 and is configured to be able to move up and down with respect to the pin 7 as indicated by an arrow in the figure. When the semiconductor wafer 2 is loaded and unloaded on the hot plate 3, the hot plate 3 is lowered to protrude the pins 7 onto the hot plate 3, and the semiconductor wafer 2 is supported on the pins 7, A space is provided between the wafer 2 and the hot plate 3 for inserting a wafer support mechanism (not shown) of the transfer device. The drive mechanism 8 is controlled by a drive control unit 9.
また、上述した電力供給装置４には、従来の基板加熱
装置と同様に、温度センサ５からの信号を参照信号とし
て、電力供給装置４から抵抗加熱ヒータに供給する電力
を調節し、熱板３の温度を予め設定された所定温度に温
度制御する温度制御装置10が設けられている。Further, similarly to the conventional substrate heating device, the power supply device 4 described above adjusts the power supplied from the power supply device 4 to the resistance heater using the signal from the temperature sensor 5 as a reference signal. There is provided a temperature control device 10 for controlling the temperature at a predetermined temperature set in advance.
さらに、この実施例には、積算熱量制御装置11が設け
られている。この積算熱量制御装置11は、積算熱量算出
部11aと、積算熱量設定部11b、比較部11cとから構成さ
れている。Further, in this embodiment, an integrated calorific value control device 11 is provided. The integrated calorific value control device 11 includes an integrated calorific value calculating unit 11a, an integrated calorific value setting unit 11b, and a comparing unit 11c.
上記積算熱量算出部11aは、駆動機構８を制御する駆
動制御部９からのウエハロード信号（半導体ウエハ２が
熱板３上に載置されたことを示す）により、半導体ウエ
ハ２が熱板３上に載置されてからの時間（処理時間）を
計測する。そして、この処理時間と温度センサ５の温度
検出信号との積算値を算出する。The integrated calorie calculating unit 11a receives the wafer load signal (indicating that the semiconductor wafer 2 has been placed on the hot plate 3) from the drive control unit 9 that controls the drive mechanism 8, and the semiconductor wafer 2 The time (processing time) after being placed on the top is measured. Then, an integrated value of the processing time and the temperature detection signal of the temperature sensor 5 is calculated.
上記積算熱量設定部11bは、例えばRAMなどの記憶手段
を備えており、この記憶手段に予め所望の積算熱量設定
値を設定し記憶させておく。The integrated heat quantity setting unit 11b includes a storage unit such as a RAM, for example, and a desired integrated heat quantity set value is set and stored in advance in this storage unit.
上記比較部11cは、この積算熱量設定部11bに設定され
た積算熱量設定値と、積算熱量算出部11aで算出された
積算値とを比較する。そして、積算熱量算出部11aで算
出された積算値が積算熱量設定部11bに設定された積算
熱量設定値と等しくなると、駆動制御部９に処理終了信
号を送る。駆動制御部９は、比較部11cから処理終了信
号が入力されると、駆動機構８によって熱板３を下降さ
せ、半導体ウエハ２を熱板３からピン７上に移し、加熱
処理を終了するよう構成されている。The comparison unit 11c compares the integrated heat amount set value set in the integrated heat amount setting unit 11b with the integrated value calculated by the integrated heat amount calculation unit 11a. When the integrated value calculated by the integrated heat amount calculating unit 11a becomes equal to the integrated heat amount set value set in the integrated heat amount setting unit 11b, a process end signal is sent to the drive control unit 9. When a processing end signal is input from the comparison unit 11c, the drive control unit 9 lowers the hot plate 3 by the drive mechanism 8, moves the semiconductor wafer 2 from the hot plate 3 onto the pins 7, and ends the heating process. It is configured.
上記構成のこの実施例の基板加熱装置１では、温度セ
ンサ５の温度検出信号を参照信号として、温度制御装置
10が、電力供給装置４から抵抗加熱ヒータに供給される
電力を調節し、熱板３の温度を予め設定された所定の温
度に制御する。In the substrate heating apparatus 1 of this embodiment having the above-described configuration, the temperature control device uses the temperature detection signal of the temperature sensor 5 as a reference signal.
10 adjusts the electric power supplied from the electric power supply device 4 to the resistance heater to control the temperature of the hot plate 3 to a predetermined temperature.
そして、駆動機構８によって、熱板３を下降させ、ピ
ン７が熱板３上に突出した状態に設定し、この状態で、
例えば自動搬送機構などにより、半導体ウエハ２をピン
７上に載置する。Then, the hot plate 3 is lowered by the driving mechanism 8 so that the pins 7 are set to protrude above the hot plate 3, and in this state,
The semiconductor wafer 2 is placed on the pins 7 by, for example, an automatic transfer mechanism.
この後、熱板３を上昇させ、半導体ウエハ２をピン７
上から熱板３上に移し、加熱処理を開始する。Thereafter, the hot plate 3 is raised, and the semiconductor wafer 2 is
It is moved onto the hot plate 3 from above, and the heat treatment is started.
この時、積算熱量算装置11の積算熱量算出部11aにお
いて、駆動制御部９からのウエハロード信号と、温度セ
ンサ５からの温度検出信号とにより、半導体ウエハ２が
熱板３上に載置されてからの時間（処理時間）と処理温
度との積算値を算出し、比較部11cにおいて、積算熱量
設定部11bに設定された積算熱量設定値と、積算熱量算
出部11aで算出された積算値とを比較する。そして、比
較部11cは、積算熱量算出部11aで算出された積算値が積
算熱量設定部11bに設定された積算熱量設定値と等しく
なると、駆動制御部９に処理終了信号を送り、駆動制御
部９は、この処理終了信号により、駆動機構８を駆動し
て熱板３を下降させ、半導体ウエハ２を熱板３からピン
７上に移し、加熱処理を終了する。At this time, the integrated wafer calorimeter 11a of the integrated calorimeter 11 puts the semiconductor wafer 2 on the hot plate 3 according to the wafer load signal from the drive controller 9 and the temperature detection signal from the temperature sensor 5. The integrated value of the accumulated time (processing time) and the processing temperature is calculated, and in the comparing unit 11c, the integrated heat amount set value set in the integrated heat amount setting unit 11b and the integrated value calculated in the integrated heat amount calculating unit 11a Compare with When the integrated value calculated by the integrated heat amount calculating unit 11a becomes equal to the integrated heat amount set value set in the integrated heat amount setting unit 11b, the comparing unit 11c sends a processing end signal to the drive control unit 9, and the drive control unit 9 drives the drive mechanism 8 to lower the hot plate 3 in response to the process end signal, moves the semiconductor wafer 2 from the hot plate 3 onto the pins 7, and ends the heating process.
したがって、例えば半導体ウエハ２を熱板３上にロー
ド・アンロードした際に、熱板３の温度が変動しても、
半導体ウエハ２に供給される総熱量が一定となり、従来
に較べて正確な処理を実施することができる。Therefore, for example, when the semiconductor wafer 2 is loaded and unloaded on the hot plate 3, even if the temperature of the hot plate 3 fluctuates,
The total amount of heat supplied to the semiconductor wafer 2 becomes constant, so that more accurate processing can be performed as compared with the related art.
なお、上記実施例では、半導体ウエハ２を熱板３上に
直接載置して加熱する基板加熱装置１について説明した
が、例えば、熱板３上に設けられた微小なピン上に半導
体ウエア２を載置し、熱板３と半導体ウエハとの間に微
小なギャップを設け、熱板３と半導体ウエハ２とを接触
させず、近接させた状態で加熱する基板加熱装置でも同
様にして適用することができる。In the above embodiment, the substrate heating apparatus 1 in which the semiconductor wafer 2 is directly mounted on the heating plate 3 and heated is described. Is mounted, a minute gap is provided between the heating plate 3 and the semiconductor wafer, and the heating plate 3 and the semiconductor wafer 2 are not brought into contact with each other, and are heated in a state where they are brought close to each other. be able to.
［発明の効果］ 以上説明したように、本発明の基板加熱装置によれ
ば、処理温度が変動しても、処理を実施する基板に供給
される総熱量が一定となり、従来に較べて正確な処理を
実施することができる。[Effects of the Invention] As described above, according to the substrate heating apparatus of the present invention, even if the processing temperature fluctuates, the total amount of heat supplied to the substrate on which the processing is performed is constant, and the substrate is more accurate than the conventional one. Processing can be performed.
第１図は本発明の一実施例の基板加熱装置の構成を示す
図である。 １……基板加熱装置、２……半導体ウエハ、３……熱
板、４……電力供給装置、５……温度センサ、６……透
孔、７……ピン、８……駆動機構、９……駆動制御部、
10……温度制御装置、11……積算熱量制御装置、11a…
…積算熱量算出部、11b……積算熱量設定部、11c……比
較部。FIG. 1 is a diagram showing a configuration of a substrate heating apparatus according to one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Substrate heating device, 2 ... Semiconductor wafer, 3 ... Hot plate, 4 ... Power supply device, 5 ... Temperature sensor, 6 ... Through hole, 7 ... Pin, 8 ... Driving mechanism, 9 ...... Drive control unit,
10 …… Temperature control device, 11 …… Integrated calorie control device, 11a…
... Integrated heat amount calculation unit, 11b... Integrated heat amount setting unit, 11c.
Claims (1)
該基板を加熱する基板加熱装置において、 前記加熱手段の温度を検出する温度検出手段と、この温
度検出手段で検出された温度と前記基板の加熱時間との
積算値を算出し、この積算値が所定の値となるよう前記
加熱時間を制御する制御手段とを設けたことを特徴とす
る基板加熱装置。1. A substrate heating apparatus for heating a substrate by bringing a heating means into contact with or close to the substrate, a temperature detecting means for detecting a temperature of the heating means, a temperature detected by the temperature detecting means and the substrate A heating means for calculating an integrated value with the heating time, and controlling means for controlling the heating time so that the integrated value becomes a predetermined value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21403090A JP2807844B2 (en) | 1990-08-13 | 1990-08-13 | Substrate heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21403090A JP2807844B2 (en) | 1990-08-13 | 1990-08-13 | Substrate heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0496317A JPH0496317A (en) | 1992-03-27 |
| JP2807844B2 true JP2807844B2 (en) | 1998-10-08 |
Family
ID=16649117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21403090A Expired - Fee Related JP2807844B2 (en) | 1990-08-13 | 1990-08-13 | Substrate heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2807844B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6222161B1 (en) | 1998-01-12 | 2001-04-24 | Tokyo Electron Limited | Heat treatment apparatus |
| JP2013098300A (en) * | 2011-10-31 | 2013-05-20 | Tokyo Electron Ltd | Thermal treatment apparatus and thermal treatment method |
| CN108663914B (en) * | 2017-03-30 | 2021-10-08 | 台湾积体电路制造股份有限公司 | Baking method |
| CN109585483B (en) * | 2018-12-04 | 2021-05-04 | 上海华力微电子有限公司 | Method for processing semiconductor wafer |
-
1990
- 1990-08-13 JP JP21403090A patent/JP2807844B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0496317A (en) | 1992-03-27 |
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