JP2795627B2 - Optical module having vertical cavity surface emitting laser and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor module, and more particularly to an optical module having a vertical cavity surface emitting laser and mounted on a submount, and a method of manufacturing the same .

[0002]

2. Description of the Related Art A plurality of laser elements are arranged in an array,
A vertical-cavity surface-emitting laser (Vertical-Cavity Surface-Emitting Laser) has been attracting attention as a key device for realizing large-capacity optical communication by transmitting optical information in parallel. A suitable vertical cavity surface emitting laser mounting technology has been studied. For example, 1
Proceedings of International Solid-State Devices and Materials Conference 1999
Pages 94 to 696, or IEICE Technical Report "Optical and Quantum Electronics" OQE93-1
No. 05 reports a vertical cavity surface emitting laser equipped with a submount.

According to these reports, as shown in FIG. 21, a vertical cavity surface emitting laser 1002 in which a light emitting thyristor having an active layer of a pnpn structure is sandwiched between Bragg reflectors is formed on a GaAs substrate 1004. Has been
A silicon nitride film 1006 is formed on the surface of the GaAs substrate 1004.
Is provided. Vertical cavity surface emitting laser 1002
Is formed on the GaAs substrate 1004 by plating so as to cover the entire surface of the substrate.
A vertical cavity surface emitting laser 1002 plated with gold is flip-chip mounted on an AlN heat sink 1012 having a Pb solder bump 1010.

According to this structure, heat generated in the vertical cavity surface emitting laser 1002 is mostly transferred to the plated Al and the AlN via the Sn / Pb solder bump.
Dissipated from the heatsink and partly directly from the gold into the air. Further, the GaAs substrate 100 can be directly formed from the active layer.
Dissipated to 4.

[0005]

In the above-mentioned prior art, a GaAs substrate 1004 and an AlN heat sink 101 are used.
2 are joined by plastic deformation of the metal. Therefore,
The GaAs substrate 10 is loaded with a load sufficient to cause plastic deformation.
04 and the AlN heat sink 1012, and a part of this load is also applied to the active layer of the vertical cavity surface emitting laser 1002. However, when a load is applied to the active layer of the vertical cavity surface emitting laser 1002, the luminous efficiency is remarkably reduced, and in the worst case, no light is emitted.

Further, since the thermal conductivity of the solder bump 1010 made of Sn / Pb is about one sixth of that of gold, heat conduction is poor at this portion. For this reason, AlN
Even if the heat sink 1012 has a high thermal conductivity, there is a problem that heat cannot be sufficiently radiated.

Furthermore, according to the prior art, the mesa surface of the vertical cavity surface emitting laser 1002 has to be plated with gold, which requires an extra step.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art. It is an object of the present invention to join a vertical cavity surface emitting laser to a submount with a small load, and to always apply gold plating. excellent light module and manufacturing its heat dissipation properties and emission characteristics can be implemented without requiring
It is to provide a manufacturing method .

[0009]

A vertical cavity surface emitting laser according to the present invention comprises a first substrate, a semiconductor multilayer supported on the first substrate, having a top surface, a bottom surface, and at least a light emitting layer. A vertical cavity surface emitting laser having:
Is supported in the substrate Rutotomoni, main parts the vertical cavity surface
An electrode structure made of a material common to the light emitting laser and electrically connected to the bottom surface of the vertical cavity surface emitting laser, and a second substrate having a first bump and a second bump. Wherein the upper surface of the vertical cavity surface emitting laser and the upper surface of the electrode structure project from the first substrate;
The second substrate is held to the first substrate such that the first bump and the second bump are in contact with the upper surface of the electrode structure and the upper surface of the vertical cavity surface emitting laser, respectively. Therefore, the above object is achieved. Book
Another vertical cavity surface emitting laser according to the invention includes a first substrate.
And a top surface and a bottom surface supported by the first substrate;
Vertical resonance having a semiconductor multilayer including at least a light emitting layer
A surface-emitting laser, which is supported by the first substrate,
The main part is the same crystal as that of the vertical cavity surface emitting laser.
The vertical cavity surface emitting laser is formed by growth.
An electrode structure electrically connected to the bottom surface, a first bump and
And a second substrate having a second bump.
The upper surface of the vibrator type surface emitting laser and the upper surface of the electrode structure,
Protruding from the first substrate, the first bump and
The second bump is located on the top surface of the electrode structure and the vertical resonator
The second surface so as to be in contact with the upper surface of the mold surface emitting laser, respectively.
Substrates are held against the first substrate, and
This achieves the above object.

Another vertical cavity surface emitting laser according to the present invention is a vertical cavity surface emitting laser having a first substrate, a top surface and a bottom surface supported by the first substrate, and a semiconductor multilayer including at least a light emitting layer. A cavity surface emitting laser, supported on the first substrate, an electrode structure electrically connected to the bottom surface of the vertical cavity surface emitting laser, and supported on the first substrate, A first support structure having a conductive upper surface, a first wiring for electrically connecting the upper surface of the vertical cavity surface emitting laser to the first support structure, a first bump and a first 2
A second substrate having bumps, wherein the upper surface of the electrode structure and the upper surface of the first support structure project from the first substrate, and the first bump and the second bump are The second substrate is held against the first substrate so as to be in contact with the upper surface of the electrode structure and the upper surface of the first support structure, respectively, thereby achieving the above object.

The main part of the electrode structure is the vertical resonator.
It may be made of the same material as the surface emitting laser.
The first support structure has a main part formed by the vertical resonator surface.
It may be made of the same material as the optical laser. Said first substrate to the support transistors, further comprising a third bump provided on the second substrate, the bumps of the third may be in contact with a portion of the transistor.

A transistor supported on the first substrate, a second support structure formed on the first substrate and having a conductive upper surface, and the transistor and the second support structure are electrically connected to each other. The semiconductor device may further include a second wiring that is electrically connected, and a third bump provided on the second substrate, and the third bump may be in contact with an upper surface of the second support structure.

Still another vertical cavity surface emitting laser according to the present invention has a first substrate, a top surface and a bottom surface supported by the first substrate, and a semiconductor multilayer including at least a light emitting layer. a vertical cavity surface emitting laser, a bipolar transistor formed in the vertical cavity surface on the upper surface of the light emitting laser, Rutotomoni is supported on the first substrate, the main unit
Is made of a material common to the vertical cavity surface emitting laser, an electrode structure electrically connected to a bottom surface of the vertical cavity surface emitting laser, a first bump and a second bump. A second substrate having two bumps, the upper surface of the electrode structure protruding from the first substrate, the first bump and the second bump being formed on the upper surface of the electrode structure and the bipolar electrode. The second transistors are respectively in contact with a part of the top surface of the transistor.
Substrate is held against the first substrate, thereby achieving the above object.

Still another vertical cavity surface emitting laser according to the present invention has a first substrate, a top surface and a bottom surface supported by the first substrate, and a semiconductor multilayer including at least a light emitting layer. A vertical cavity surface emitting laser, a bipolar transistor formed on an upper surface of the vertical cavity surface emitting laser, and a bipolar transistor supported on the first substrate, and provided on a bottom surface of the vertical cavity surface emitting laser. An electrically connected electrode structure, a first support structure having a conductive upper surface, the first support structure being supported on the first substrate such that the upper surface protrudes; the bipolar transistor; A first wiring for electrically connecting the upper surface of the support structure, a first bump and a second wiring;
A second substrate having bumps, wherein the upper surface of the electrode structure and the upper surface of the first support structure project from the first substrate, and the first bump and the second bump are The second substrate is held against the first substrate so as to be in contact with the upper surface of the electrode structure and the upper surface of the first support structure, thereby achieving the above object.

The main part of the electrode structure is the vertical resonator.
It may be made of the same material as the surface emitting laser.
The first support structure may be provided close to the vertical cavity surface emitting laser.

The first support structure may include at least a semiconductor layer made of the same semiconductor as the semiconductor multilayer, an insulating layer provided on the semiconductor layer, and an electrode provided on the insulating layer. .

[0017] The first support structure may include at least a semiconductor layer made of the same semiconductor as the semiconductor multilayer and a metal film provided on the semiconductor layer.

[0018] A distance from the first substrate to an upper surface of the first support structure may be larger than a distance from the first substrate to an upper surface of the vertical cavity surface emitting laser.

The transistor may be a field effect transistor.

[0020] The transistor may be a heterojunction bipolar transistor.

An adhesive may be filled between the first substrate and the second substrate.

[0022] The adhesive may be a thermosetting resin.

[0023] The adhesive may be an ultraviolet curable resin.

The electrode structure and the vertical cavity surface emitting laser are respectively provided in a plurality, and the plurality of electrode structures are located at the vertices of a polygon on the first substrate. The surface emitting laser may be located inside the polygon.

The first and second bumps may be made of a metal having a melting point of 350 ° C. or less.

[0026] The first and second bumps may be made of bismuth.

The upper surface of the electrode structure and the upper surface of the vertical cavity surface emitting laser may be made of a metal having a melting point of 350 ° C. or less.

The upper surface of the electrode structure and the upper surface of the vertical cavity surface emitting laser may be made of bismuth.

[0029] The vertical cavity surface emitting laser may further have a first and a second Bragg reflector sandwiching the light emitting layer.

A guide hole for receiving an optical fiber may be provided on the back surface of the first substrate corresponding to the position where the vertical cavity surface emitting laser is provided. In addition,
Optical module with bright vertical cavity surface emitting laser
The manufacturing method is such that a vertical cavity surface emitting laser is formed on a first substrate.
Growing a semiconductor multilayer including a semiconductor layer to be a light emitting layer of the semiconductor
And etching the semiconductor multilayer to form the semiconductor multilayer.
Vertical resonance including the light emitting layer protruding from the first substrate
Shape surface emitting laser part and shape protruding from the first substrate
And the main part is common to the vertical cavity surface emitting laser part.
Forming an electrode structure portion made of a material of
Forming a first bump and a second bump on a second substrate;
And the first bump and the second bump are in contact with the first bump.
Upper surface of the vertical cavity surface emitting laser portion protruding from the substrate
And an upper surface of the electrode structure protruding from the first substrate.
The second substrate is in contact with the first substrate so as to be in contact with each other.
And holding it, and thereby,
Objective is achieved.

[0031]

BEST MODE FOR CARRYING OUT THE INVENTION

(Embodiment 1) FIG. 1 shows a cross section of an optical module 10 having a vertical cavity surface emitting laser according to the present invention.
The optical module 10 is a first optical module made of an n-type GaAs semiconductor.
, A vertical cavity surface emitting laser 14 and an electrode structure 16 supported by the first substrate 12, and a second substrate 11 made of silicon. The second substrate functions as a submount. An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the second substrate 11, and the micro bumps 18 and 20 are provided on the second substrate 11 via the insulating film 21. Further, although not shown, the micro bumps 18 and 20 are connected to wiring having pads, respectively.

Upper surface 13 of vertical cavity surface emitting laser 14
The upper surface 15 of the electrode structure 16 protrudes from the first substrate 12. The micro bumps 18 and 20 protrude from the surface of the second substrate 11. As a result, the first substrate 12 and the second substrate 11
And 20 are held so as to be in contact with the upper surface 13 of the vertical cavity surface emitting laser 14 and the upper surface 15 of the electrode structure 16, respectively, and the ultraviolet curable resin 22 is provided between the first substrate 12 and the second substrate 11. be satisfied.

The vertical cavity surface emitting laser 14 is composed of an n-type Bragg reflector 26 and a p-type
It includes a semiconductor multilayer 30 including a shaped Bragg reflector 28 and an electrode 32 provided on the semiconductor multilayer 30. Light emitted from the light emitting layer 24 is preferably transparent to at least the first substrate 12 or the second substrate 11.
When the light emitted from the light emitting layer 24 with respect to the first substrate 12 is not transparent, the groove 90 is etched from the back surface of the first substrate 12 at the position where the vertical cavity surface emitting laser 14 is provided. It suffices if it is provided to extract outgoing light.

The electrode structure 16 includes a semiconductor multilayer 34 composed of the same semiconductor layer as the semiconductor multilayer 30, and a semiconductor multilayer 34.
And an electrode 36 provided thereon. Semiconductor multilayer 3
The pn junction formed in 4 is broken, and the upper surface 15 and the lower surface 19 of the electrode structure 36 are connected with low resistance. Since the vertical cavity surface emitting laser 14 and the electrode structure 16 are provided on the first substrate 12 via the buffer layer 38 made of low resistance n-type GaAs, the bottom surface 17 of the vertical cavity surface emitting laser 14 And the bottom surface 19 of the electrode structure 16
Are in contact with the buffer layer 38 and are electrically connected to each other.

The microbumps 18 and 20 are preferably made of a material having excellent thermal conductivity, and more preferably contain gold having excellent thermal conductivity.

A more specific example of the vertical cavity surface emitting laser 14 will be described with reference to FIG. As shown in FIG. 2, the n-type Bragg reflector 26 includes an n-type AlAs layer 41.
And 24.5 pairs of n-type GaAs layers 42. Similarly, the p-type Bragg reflector 28 is a p-type Al
24. As layer 43 and p-type GaAs layer 44 are paired.
Includes 5 pairs. An active region 45 is provided between the n-type Bragg reflector 26 and the p-type Bragg reflector 28.

The active region 45 includes the light emitting layer 24, the barrier layers 46 and 47, and the spacer layers 48, 49, 50, and 5
1 is included. The light emitting layer 24 includes barrier layers 46 and 47
The barrier layers 46 and 47 are further sandwiched between spacer layers 48 and 50 and spacer layers 49 and 51. The light emitting layer 24 and the barrier layers 46 and 47
Each is made of undoped In _0.2 Ga _0.8 As and undoped GaAs. The spacer layers 48 and 49 are made of undoped Al _0.5 Ga _0.5 As, and the spacer layers 50 and 51 are made of n-type Al _0.5 Ga _0.5 As and p, respectively.
Type Al _0.5 Ga _0.5 As. Barrier layers 46 and 47
As a result, electrons and holes are confined in the light emitting layer 24.
Spacer layers 48 to 51 are provided to adjust the length of the vertical resonator so as to oscillate in a single longitudinal mode. Table 1 shows the thicknesses and impurity concentrations of these semiconductor layers.

[0038]

[Table 1]

As shown in FIG. 1, the optical module 10
In the above, a positive voltage is applied to the electrode 32 of the vertical cavity surface emitting laser 14 by connecting a positive power supply and a negative power supply to the wiring connected to the microbump 18 and the wiring connected to the microbump 20, respectively. , A negative voltage is applied to the electrode structure 16.

Since the electrode structure 16 is electrically connected to the bottom surface 17 of the vertical cavity surface emitting laser via the buffer layer 38, a positive voltage and a negative voltage are applied to the p-type Bragg reflector 28 and the n-type Bragg reflector 26, respectively. A negative voltage is applied, and the vertical cavity surface emitting laser 14 emits light.

The optical module 10 is manufactured by, for example, the following method.

First, as shown in FIGS. 3A and 3B, a buffer layer 38 and semiconductor layers 24 and 41 to 51 shown in FIG. 2 are formed on a first substrate 12 made of n-type GaAs.
The semiconductor multilayer 30 including FIG. 2 is epitaxially grown by MBE or the like. As shown in FIG. 3C, by dry etching using a mixed gas containing chlorine,
The vertical cavity surface emitting laser 14 and the electrode structure 16 are formed by etching a part of the semiconductor multilayer 30 until the buffer layer 38 is exposed and forming the electrodes 32 and 36 on the semiconductor multilayer 30. A high electric field is applied to the semiconductor multilayer 30 of the electrode structure 16 between the buffer layer 38 and the electrode 36 to destroy the pn junction. As a result, an electrode structure 16 having a low resistance is formed.

Next, as shown in FIG.
An insulating film 21 made of silicon oxide is formed on a second substrate 11 made of silicon held thereon, and micro bumps 18 and 2 made of, for example, Ti / Pd / Au are formed thereon.
0 is formed. Although not shown, a wiring having a pad for applying a voltage is connected to the microbump. After applying an ultraviolet curable resin 22 on the insulating film 21 so as to cover the micro bumps 18 and 20, the first substrate 12 is attracted to the vacuum collet 52, and the micro bumps 18 and 20 are turned into the vertical cavity surface emitting laser. The first substrate 12 is held on the second substrate 11 so as to face the electrode structure 14 and the electrode structure 16.

Then, as shown by the arrows, the upper surface of the electrode 32 of the vertical cavity surface emitting laser 14 and the electrode structure 1
The first substrate 12 is pressed against the second substrate 11 so that the upper surface of the sixth electrode 36 contacts the micro bumps 18 and 20. Thereby, as shown in FIG. 3E, the micro bumps 18 and 20 and the vertical cavity surface emitting laser 1
The ultraviolet curable resin 22 between the electrode 4 and the electrode structure 16 is eliminated. While maintaining this state, the ultraviolet curable resin 22
Is irradiated with ultraviolet light. The ultraviolet curable resin 22 contracts due to the irradiation of the ultraviolet light, and the first substrate 12 and the second substrate 11 are bonded. Further, the electrode 32 of the vertical cavity surface emitting laser 14 and the electrode 36 of the electrode structure 16 surely come into contact with the micro bumps 18 and 20, respectively, and a good electrical connection is formed. The electrodes 32 and 36 preferably have a thickness of 200 nm or more, and the microbumps 18 and 20 preferably have a thickness of 500 nm or more.
Optimum bonding is obtained when 6 has a thickness of 2 μm or more and micro bumps 18 and 20 have a thickness of 5 μm or more. Thereby, the optical module 1 shown in FIG.
0 is completed.

According to the present invention, the two substrates 11 and 12 are held while the contraction force of the ultraviolet curable resin extends over the entire first substrate 12 and second substrate 11. Therefore, the load applied to the upper surface of the vertical cavity surface emitting laser can be reduced, and the strain applied to the light emitting layer due to the load at the time of mounting can be reduced.
Further, heat generated in the light emitting layer can be radiated to the second substrate through the microbumps, so that the heat radiation characteristics are excellent.

In the above embodiment, the electrode structure 16 is composed of the semiconductor multilayer in which the pn junction is destroyed and the electrode formed on the semiconductor multilayer. However, the electrode structure 16 has another conductive structure. You may. Specific examples are shown below.

The optical module 58 shown in FIG.
Is the electrode structure 6 instead of the electrode structure 16 shown in FIG.
It has 0. The electrode structure 60 includes a base 61 made of a semiconductor multilayer, an insulating layer, or the like, and a conductive wiring 6 covering the upper surface of the base 61 and electrically connected to at least the buffer layer 38.
2 is provided. The wiring 62 is preferably formed of an ohmic electrode material such as AuGe / Ni or AuZn / Au in order to obtain low-resistance electrical contact with the buffer layer 38.

The optical module 59 shown in FIG.
Is the electrode structure 6 instead of the electrode structure 16 shown in FIG.
Three. The electrode structure 63 includes an ohmic electrode 64 formed on the buffer layer 38 and a gold layer 65 formed on the ohmic electrode 64 by a plating method.

In the above embodiment, an ultraviolet curable resin is used as the adhesive, but a thermosetting resin may be used instead.

In the above embodiment, an optical module having one vertical cavity surface emitting laser and one electrode structure has been described. However, one vertical cavity surface emitting laser and one electrode structure are provided.
More than one may be provided.

FIGS. 5A and 5B show the structure of the first substrate 12 and the second substrate 11 for forming an optical module having nine vertical cavity surface emitting lasers and four electrode structures. It is a perspective view which shows the structure of.

As shown in FIG. 5A, nine vertical cavity surface emitting lasers 14 arranged in three rows and columns are supported on the first substrate 12. The electrode structure 16 is a rectangular 68 4 surrounding the array of the vertical cavity surface emitting lasers 14.
Located at one vertex.

On the second substrate 11, micro-bumps 18 and 20 are provided at positions corresponding to the vertical cavity surface emitting laser 14 and the electrode structure 16 provided on the first substrate 12 via an insulating film 21. Is provided. Micro bump 1
8 and 20 have wirings 66 and 6 having pads, respectively.
7 is connected.

As shown in FIG. 5, by disposing the vertical cavity surface emitting laser 14 and the electrode structure 16, the first
The load applied when the substrate 12 and the second substrate 11 are bonded to each other is distributed to the four corner electrode structures 16. Therefore, the vertical cavity surface emitting laser 1
The load applied to 4 becomes uniform, and the deterioration of the luminous efficiency of the vertical cavity surface emitting laser 14 becomes smaller than that in the case shown in FIG.

Embodiment 2 FIG. 6A shows a second embodiment of the present invention.
1 shows a cross section of an optical module 100 having a vertical cavity surface emitting laser according to the embodiment. In FIG. 6A, the same components as those of the optical module 10 of the first embodiment are denoted by the same reference numerals.

The optical module 100 includes the first substrate 12
And a vertical cavity surface emitting laser 14, an electrode structure 16, and a support structure 101 supported on the first substrate 12 via the buffer layer 38, and the second substrate 11. An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the second substrate 11, and micro bumps 20 and 102 are provided on the second substrate 11 via the insulating film 21. Although not shown, micro bump 2
Reference numerals 0 and 102 are respectively connected to wiring having pads.

The vertical cavity surface emitting laser 14 comprises an n-type Bragg reflector 26 and a p-type
It includes a semiconductor multilayer 30 including a shaped Bragg reflector 28 and an electrode 32 provided on the semiconductor multilayer 30.

The electrode structure 16 includes a semiconductor multilayer 34 composed of the same semiconductor layers as the semiconductor multilayer 30 and a semiconductor multilayer 34
And an electrode 36 provided thereon. Semiconductor multilayer 3
The pn junction formed in 4 is broken, and the upper surface 15 and the lower surface 19 of the electrode structure 16 are connected with low resistance.

The support structure 101 has a semiconductor multilayer 103 composed of the same semiconductor layer as the semiconductor multilayer 30, and an insulating layer 104 is provided between the semiconductor multilayer 103 and the electrode 105. The support structure 101 has an upper surface 108 that is conductive, and the buffer layer 3 on which the support structure 101 is provided.
Any material other than the semiconductor multilayer 103 may be used as long as the material 8 and the upper surface 108 are electrically insulated.

A polyimide film 106 is provided on the first substrate 12 so as to cover the buffer layer 38, and the electrode 3 of the vertical cavity surface emitting laser 14 is formed on the polyimide film 106.
A wiring 107 is provided for electrically connecting the second electrode 2 and the electrode 105 of the support structure 103. The polyimide film 106 is provided mainly to hold the wiring 107 at a predetermined distance from the surface of the first substrate 12.
The step between 5 is small. Thereby, the electrode 32
The step between the electrode 105 and the electrode 105 is increased to prevent the wiring 107 from being disconnected without being formed continuously.

The upper surface 108 of the support structure 101 and the upper surface 15 of the electrode structure 16 protrude from the surface of the polyimide film 106. The micro bumps 20 and 102 also protrude from the second substrate 11. For this reason, the first substrate 12 and the second substrate 11 are configured such that the micro bumps 20 and 102 have the upper surface 15 of the electrode structure 16 and the support structure 101.
Are held in contact with the upper surface 108 of the
The ultraviolet curable resin 22 is composed of the first substrate 12 and the second substrate 11
And between being filled.

In the optical module 100, a positive voltage is applied to the wiring 107 by connecting a positive power supply and a negative power supply to the wiring connected to the microbump 102 and the wiring connected to the microbump 20, respectively. A negative voltage is applied to 16.

The wiring 107 is electrically connected to the electrode 32 of the vertical cavity surface emitting laser 14 and has an electrode structure 1
6 is electrically connected to the bottom surface 17 of the vertical cavity surface emitting laser via the buffer layer 38, so that a positive voltage and a negative voltage are applied to the p-type Bragg reflector 28 and the n-type Bragg reflector 26, respectively. , The vertical cavity surface emitting laser 14 emits light.

One of the main features of the optical module 100 is that the electrode structure 16 and the support structure 101 provided on the first substrate 12 receive the micro bumps 20 and 102 so as to hold the second substrate 11. It is to have. With this structure, the vertical cavity surface emitting laser 14
The first substrate 12 and the second substrate 11 can be joined without applying a load to the first substrate 12. Therefore, a load is applied to the light emitting layer 24 of the vertical cavity surface emitting laser 14 to mount the vertical cavity surface emitting laser on the submount without deteriorating the luminous efficiency of the vertical cavity surface emitting laser 14. Can be. In order to ensure that the load at the time of joining is not applied to the vertical cavity surface emitting laser 14, the support structure 101 is preferably close to the vertical cavity surface emitting laser 14. Surface emitting laser 14
It is preferable that they are arranged within a distance of not more than 20 μm. Further, the electrodes 105 and 36 preferably have a thickness of 200 nm or more, the microbumps 102 and 20 preferably have a thickness of 500 nm or more, and the electrodes 105 and 36 have a thickness of 2 μm or more. Bump 102
And 20 have optimal thickness when they have a thickness of 5 μm or more.

As shown in FIG. 6B, in order to ensure that no load is applied to the vertical cavity surface emitting laser 14, the upper surface 108 of the support structure 101 is vertically Upper surface 13 of container-shaped surface emitting laser 14
It is preferable that the height be higher than the above. Such a structure can be realized, for example, by making the total thickness of the insulating layer 104 and the electrode 105 larger than the thickness of the electrode 32, and the difference in height between the upper surface 108 and the upper surface 13 is 0.5.
μm or more is preferred. According to this structure, the support structure 10
Even when the substrate 1 is embedded in the microbump 102, the upper surface 13 of the vertical cavity surface emitting laser 14 is
, It is possible to reliably prevent a load from being applied to the light emitting layer 24.

The optical module 100 is manufactured by substantially the same method as in the first embodiment.

Specifically, the vertical cavity surface emitting laser 1
When the fourth semiconductor multilayer 30 is formed by dry etching, the semiconductor multilayers 34 and 103 for the electrode structure 16 and the support structure 101 are simultaneously formed. Thereafter, an insulating layer 104 is formed on the semiconductor multilayer 103, and the semiconductor multilayer 30 is formed.
And 34 and on the insulating layer 104.
6 and 105 are respectively formed. After forming the polyimide film 106 covering the buffer layer 38, the electrodes 32 and 1
Next, a wiring 107 for connecting the wirings 05 is formed. Thereafter, the second substrate 11 is replaced with the first substrate 1 by the same method as in the first embodiment.
2

In the optical module 100, the electrode structure 1
6 and the thermosetting resin 22 can be variously modified as described in the first embodiment.

FIG. 7 shows an example of the output characteristics of the optical module 100 manufactured by the above-described method. For comparison, the characteristics before connecting the second substrate are also shown.
As is clear from FIG. 7, before connecting the second substrate,
The maximum output is about 21 mW, but the maximum output is increased to about 32 mW by connecting the second substrate. This is because the heat generated in the vertical cavity surface emitting laser is connected to the first substrate 12 and the second substrate 12 via the polyimide film 106 and the ultraviolet curable resin 22 by connecting the second substrate via the micro bumps. This is because the heat is radiated to the substrate 11 and the temperature rise of the active layer 24 is suppressed.

The optical module having the above-described structure can be suitably connected to an optical fiber. FIG. 8 schematically shows a cross section of an optical module 110 connectable to an optical fiber.

The optical module 110 includes the first substrate 12
A vertical cavity surface emitting laser 111 supported on the first substrate 12, an electrode structure 112, and a support structure 113;
And a second substrate 11. An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the second substrate 11, and micro bumps 20 and 102 are provided on the second substrate 11 via the insulating film 21. Further, although not shown, the micro bumps 20 and 102 are connected to wiring having pads, respectively.

The vertical cavity surface emitting laser 111 includes a semiconductor multilayer 11 including a light emitting layer 24 and a part of an n-type Bragg reflector 26 and a p-type Bragg reflector 114 sandwiching the light emitting layer 24.
5 and an electrode 32 provided on the semiconductor multilayer 115. The p-type Bragg reflector 114 is connected to the first substrate 12
Is provided so as to cover the entire surface.

The electrode structure 112 includes a semiconductor multilayer 116 composed of the same semiconductor layers as the semiconductor multilayer 115, and the electrodes 36 provided on the semiconductor multilayer 116. The semiconductor multilayer 116 includes a part of the p-type Bragg reflector 114, and the pn junction formed in the semiconductor multilayer 116 is broken.

The supporting structure 113 includes a semiconductor multilayer 117 composed of the same semiconductor layer as the semiconductor multilayer 115 and a semiconductor multilayer 11.
7 and a part of the wiring 119 provided on the insulating layer 118. The insulating layer 118 further includes a vertical cavity surface emitting laser 111 and an electrode structure 1.
12 are formed on the p-type Bragg reflector 114 so as to cover the side surfaces of the twelve. The wiring 119 is connected to the electrode 32 of the vertical cavity surface emitting laser 111.

The upper surface 15 of the electrode structure 112 and the support structure 1
13 protrudes from the first substrate 12, the first substrate 12 and the second substrate 11 are such that the micro-bumps 20 and 102 are respectively connected to the upper surface 15 of the electrode structure 112 and the upper surface 120 of the support structure 113. Held in contact. Then, the ultraviolet curable resin 22 is applied to the first substrate 12.
And the second substrate 11.

On the back surface 126 of the first substrate 12, a guide hole 121 is provided corresponding to the position where the vertical cavity surface emitting laser 111 is provided, and a silicon oxide film 122 is formed around the guide hole 121. Have been. A multi-mode optical fiber 123 having a core 124 and a cladding layer 125 is inserted into the guide hole 121, and light 127 emitted from the vertical cavity surface emitting laser 111 is transmitted to the first substrate 12.
And enters the core 124.

According to such a structure, all the wirings necessary for driving the vertical cavity surface emitting laser 111 can be formed on the second substrate 11.
A space for connecting to the optical fiber can be secured on the back surface 126 of the second member. In addition, since the deep guide hole 121 can be formed on the back surface of the first substrate 12, the alignment between the optical fiber 123 and the vertical cavity surface emitting laser 111 can be performed very easily. Therefore, even when a plurality of vertical cavity surface emitting lasers 111 are arranged in an array on the first substrate 12, a plurality of optical fibers can be easily connected. Is realized.

(Embodiment 3) FIG. 9 shows a cross section of an optical module 130 having a vertical cavity surface emitting laser according to a third embodiment of the present invention. The optical module 130
The second substrate 11 includes a first substrate 12, a vertical cavity surface emitting laser 132 supported on the first substrate 12, an electrode structure 136, a field effect transistor 134, and the second substrate 11. On the surface of the second substrate 11, an insulating film 21 made of silicon nitride, silicon oxide, or the like is provided.
Micro bumps 138, 140, and 142 are provided on the second substrate 11 via. Further, although not shown, the micro bumps 138, 140, and 142 are respectively connected to wiring having pads.

The vertical cavity surface emitting laser 132 is formed on the semiconductor multilayer 148 and the semiconductor multilayer 148 including the light emitting layer 24, a part of the n-type Bragg reflector 144 sandwiching the light emitting layer 24, and the p-type Bragg reflector 146. And an electrode 150 provided. The n-type Bragg reflector 144 is provided to cover the entire surface of the first substrate 12.

The field-effect transistor 134 has an n-type channel layer 154, and a gate electrode 156, a source electrode 158, and a drain electrode 160 provided on the channel layer 154. The channel layer 154 is formed of the same semiconductor layer as the semiconductor multilayer 148.
Is formed on.

The electrode structure 136 includes a semiconductor multilayer 162 composed of the same semiconductor layers as the semiconductor multilayer 152 and the channel layer 154, and an electrode 16 provided on the semiconductor multilayer 162.
4 is included. The semiconductor multilayer 164 includes a portion of the n-type Bragg reflector 144, and the pn junction formed in the semiconductor multilayer 164 has been broken. As a result, the upper surface 166 of the electrode structure 136 is connected to the n-type Bragg reflector 144 of the vertical cavity surface emitting laser 132 with low resistance.

The side surfaces of the vertical cavity surface emitting laser 132, the field effect transistor 134, the electrode structure 136 and the n-type Bragg reflector 144 are covered with an insulating film 168 made of silicon oxide or silicon nitride. A wiring 170 for electrically connecting the electrode 150 of the vertical cavity surface emitting laser 132 and the source electrode 158 is provided on the insulating film 168.

The upper surface 166 of the electrode structure 136 protrudes from the surface of the n-type Bragg reflector 144 provided on the first substrate 12, and the first substrate 12 and the second substrate 11
Is held so that the microbumps 138, 140, and 142 are in contact with the upper surface 166 of the electrode structure 136, the drain electrode 160, and the gate electrode 156, respectively.
Then, the ultraviolet curable resin 22 is filled between the first substrate 12 and the second substrate 11.

In the optical module 130, based on the voltage applied to the gate electrode 156, the drain electrode 160
A current flows between the gate electrode 158 and the source electrode 158, and a voltage is applied to the vertical cavity surface emitting laser 132 via the wiring 170. On the other hand, since a voltage is also applied to the n-type Bragg reflector 144 via the electrode structure 136, the vertical cavity surface emitting laser 132 can emit light.

Also in this structure, since the upper surface 172 of the vertical cavity surface emitting laser 132 does not contact the microbump, the second substrate 11 can be attached to the first substrate 12 without applying a load to the light emitting layer 24. Can be joined.

In the above embodiment, the optical module including the field effect transistor and the vertical cavity surface emitting laser has been described. However, as described below, a heterojunction bipolar transistor is provided instead of the field effect transistor. Is also good.

FIG. 10 shows a cross section of the optical module 200. The optical module 200 includes: a first substrate 12;
The second substrate 11 includes a vertical cavity surface emitting laser 202, an electrode structure 204, and a heterojunction bipolar transistor 206 supported on a first substrate 12 via a buffer layer 38. On the surface of the second substrate 11, an insulating film 21 made of silicon nitride, silicon oxide, or the like is provided.
0, 212, and 214 are provided on the second substrate 11. Although not shown, the micro bumps 20
8, 210, 212 and 214 are respectively connected to the wiring provided with the pads.

The vertical cavity surface emitting laser 202 is formed on a semiconductor multilayer 220 including a light emitting layer 24, a part of a p-type Bragg reflector 216 sandwiching the light emitting layer 24, and an n-type Bragg reflector 218. And an electrode 222 provided. The p-type Bragg reflector 216 is provided to cover the entire surface of the buffer layer 38.

Heterojunction bipolar transistor 206
Has a collector layer 224, a base layer 226, and an emitter layer 228, and a collector electrode 230, a base electrode 232, and an emitter electrode 234 electrically connected to these semiconductor layers. The base layer 226 is the emitter layer 2
28 and the collector layer 224, and the collector layer 224 is formed on a semiconductor multilayer 236 having the same semiconductor layer as the semiconductor multilayer 220 via a buffer layer 238.

The electrode structure 204 includes a semiconductor multilayer 240 composed of the same semiconductor layer as the semiconductor multilayer 220, and an electrode 242 provided on the semiconductor multilayer 240. The semiconductor multilayer 240 includes a portion of the p-type Bragg reflector 216, and the pn junction formed in the semiconductor multilayer 240 has been broken. As a result, the upper surface 24 of the electrode structure 204
4 is connected to the p-type Bragg reflector 216 of the vertical cavity surface emitting laser 202 with low resistance.

The vertical cavity surface emitting laser 202, the heterojunction bipolar transistor 206, and the electrode structure 20
4 and the p-type Bragg reflector 216 are covered with an insulating film 246 made of silicon oxide or silicon nitride. A wiring 248 that electrically connects the electrode 222 of the vertical cavity surface emitting laser 202 and the collector electrode 230 is provided on the insulating film 246.

The upper surface 244 of the electrode structure 204 protrudes from the surface of the p-type Bragg reflector 216 formed on the first substrate 12, and the first substrate 12 and the second substrate 11 , 210, 212, and 21
4 is the upper surface 244 of the electrode structure 204, the emitter electrode 23
4, and are held in contact with the base electrode 232 and the collector electrode 230, respectively. An ultraviolet curable resin 22 is filled between the first substrate 12 and the second substrate 11.

In the optical module 200, a current flows between the emitter electrode 234 and the collector electrode 230 based on the voltage or current applied to the base electrode 232 via the micro-bump 212, and the vertical resonance occurs via the wiring 248. A voltage is applied to the n-type Bragg reflector 218 of the surface emitting laser 202. On the other hand, since a voltage is also applied to the p-type Bragg reflector 216 via the electrode structure 204, the vertical cavity surface emitting laser 202 can emit light.

Also in this structure, since the upper surface 250 of the vertical cavity surface emitting laser 202 does not contact the microbump, the second substrate 11 can be attached to the first substrate 12 without applying a load to the light emitting layer 24. Can be joined.

As described below, a heterojunction bipolar transistor can be formed on a vertical cavity surface emitting laser.

FIG. 11 shows a cross section of the optical module 260. The optical module 260 includes a first substrate 12,
A vertical cavity surface emitting laser 262 and an electrode structure 264 supported on the first substrate 12 via a buffer layer 38;
A heterojunction bipolar transistor 266 formed on a vertical cavity surface emitting laser 262;
And An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the second substrate 11,
The micro bumps 268, 270, 2
72 and 274 are provided on the second substrate 11. Although not shown, the micro bumps 268, 2
Reference numerals 70, 272, and 274 are respectively connected to wiring having pads.

The vertical cavity surface emitting laser 262 includes the light emitting layer 24, a part of the p-type Bragg reflector 276 sandwiching the light emitting layer 24, and an n-type Bragg reflector 278. p
The Bragg reflector 276 is provided to cover the entire surface of the buffer layer 38.

Heterojunction bipolar transistor 266
Are base electrodes 286 and 287 electrically connected to the collector layer 280, the base layer 282, and the emitter layer 284, and the base layer 282 and the emitter layer 284, respectively.
And an emitter electrode 288. The base layer 282 is sandwiched between the emitter layer 284 and the collector layer 280, and the collector layer 280 is formed on the n-type Bragg reflector 278 of the vertical cavity surface emitting laser 262.

The electrode structure 264 is formed of the same semiconductor layer as that of the vertical cavity surface emitting laser 262.
0 and an electrode 292 provided on the semiconductor multilayer 290. The semiconductor multilayer 290 is a p-type Bragg reflector 27
6, the pn junction formed in the semiconductor multilayer 290 has been destroyed. As a result, the electrode structure 2
64 has a vertical cavity surface emitting laser 262
Is connected to the p-type Bragg reflector 276 with low resistance.

The vertical cavity surface emitting laser 262, the heterojunction bipolar transistor 266, and the electrode structure 26
4 and the p-type Bragg reflector 276 are covered with an insulating film 296 made of silicon oxide or silicon nitride.

The upper surface 294 of the electrode structure 264 protrudes from the surface of the p-type Bragg reflector 276 formed on the first substrate 12, and the first substrate 12 and the second substrate 11 , 270, 272, and 27
4 are held so as to be in contact with the base electrode 286, the emitter electrode 288, the base electrode 287, and the upper surface 294 of the electrode structure 264, respectively. An ultraviolet curable resin 22 is filled between the first substrate 12 and the second substrate 11.

In the optical module 260, the base electrodes 286 and 287 extend from the micro bumps 268 and 272.
Based on the voltage applied to the base layer 282 via
Negative charges are applied from the micro bumps 270 to the n-type Bragg reflector 278 via the emitter layer 284, the base layer 282, and the collector layer 280. On the other hand, a positive voltage is applied from the microbump 274 to the p-type Bragg reflector 276 via the electrode structure 290, so that the vertical cavity surface emitting laser 262 can emit light.

In the above embodiment, the optical module in which the micro-bump for receiving at least two of the three terminals of the field effect transistor or the bipolar transistor is provided on the second substrate 11 has been described. However, micro bumps that directly receive these terminals are not always necessary. For example, when the optical module has another active element or passive element, these terminals are connected to the active element or passive element, and directly connected to the micro bumps provided on the second substrate. It does not need to be done.

Embodiment 4 FIG. 12A shows a cross section of an optical module 300 having a vertical cavity surface emitting laser according to a fourth embodiment of the present invention. Optical module 3
00 differs from the optical module 130 shown in FIG. 9 in that it has two support structures and the microbump does not directly contact the field effect transistor. 12A, the same components as those of the optical module 130 shown in FIG. 9 are denoted by the same reference numerals.

The optical module 300 includes the first substrate 12
A vertical cavity surface emitting laser 132 supported on the first substrate 12, an electrode structure 136, a field effect transistor 134, a first support structure 302, and a second support structure 3.
04 and the second substrate 11. Second substrate 1
An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the substrate 1, and micro bumps 138, 306, and 308 are provided on the second substrate 11 via the insulating film 21. Further, although not shown, the micro bumps 138, 306, and 308 are respectively connected to wiring having pads.

The vertical cavity surface emitting laser 132 is formed on the semiconductor multilayer 148 and the semiconductor multilayer 148 including the light emitting layer 24, a part of the n-type Bragg reflector 144 sandwiching the light emitting layer 24, and the p-type Bragg reflector 146. And an electrode 150 provided. The n-type Bragg reflector 144 is provided to cover the entire surface of the first substrate 12.

The field-effect transistor 134 includes an n-type channel layer 154, and a gate electrode 156, a source electrode 158, and a drain electrode 160 provided on the channel layer 154. The channel layer 154 is formed of the same semiconductor layer as the semiconductor multilayer 148.
Is formed on.

The electrode structure 136 includes a semiconductor multilayer 162 composed of the same semiconductor layer as the semiconductor multilayer 148 and the channel layer 154, and an electrode 16 provided on the semiconductor multilayer 162.
4 is included. The semiconductor multilayer 162 includes a portion of the n-type Bragg reflector 144, and the pn junction formed in the semiconductor multilayer 162 has been destroyed. As a result, the upper surface 166 of the electrode structure 136 is connected to the n-type Bragg reflector 144 of the vertical cavity surface emitting laser 132 with low resistance.

The first support structure 302 and the second support structure 304 are formed of the same semiconductor layers as the semiconductor multilayer 148 and the channel layer 154.
A part of the insulating layer 168 covering the semiconductor multilayers 310 and 312; and wirings 314 and 3 provided on the insulating layer 168.
16 parts. The wirings 314 and 316 are electrically connected to the drain electrode 160 and the gate electrode 156, respectively.

The side surfaces of the vertical cavity surface emitting laser 132, the field effect transistor 134, the electrode structure 136, the first support structure 302, the second support structure 304, and the n-type Bragg reflector 144 are made of silicon oxide or nitride. It is covered with an insulating film 168 made of silicon. A wiring 170 for electrically connecting the electrode 150 of the vertical cavity surface emitting laser 132 and the source electrode 158 is provided on the insulating film 168.

The upper surface of the electrode structure 136, the first support structure 3
02 and the upper surface of the second support structure 304 project from the first substrate 12, and the first substrate 1
2 and the second substrate 11 are connected to the micro bumps 138, 30
6 and 308 are held in contact with the upper surface 166 of the electrode structure 136, the first support structure 302, and the second support structure 304, respectively. Then, the ultraviolet curable resin 22 is filled between the first substrate 12 and the second substrate 11.

In the optical module 300, based on the voltage applied from the micro bump 308 to the wiring 316 and the gate electrode 156, the vertical resonance from the micro bump 306 via the wiring 314, the drain electrode 160, the source electrode 158 and the wiring 170. A voltage is applied to the p-type Bragg reflector 146 of the surface emitting laser 132. on the other hand,
Since a voltage is also applied to the n-type Bragg reflector 144 via the electrode structure 136, the vertical cavity surface emitting laser 13
2 can emit light.

According to this structure, since the upper surface of the vertical cavity surface emitting laser 132 does not contact the microbump, the second substrate 11 can be attached to the first substrate 12 without applying a load to the light emitting layer 24. Can be joined. Further, no load is applied to the field effect transistor 134.

In order to ensure that no load is applied to the vertical cavity surface emitting laser 132, FIG.
As shown in (b), the upper surfaces 318 and 320 of the first support structure 302 and the second support structure 304 are positioned on the upper surface 32 of the vertical cavity surface emitting laser 132 with respect to the first substrate 12.
It is preferably higher than 2. Such a structure is, for example, the semiconductor multilayers 310 and 312 and the insulating layer 1
68, an insulating layer 324 made of silicon oxide or silicon nitride may be formed. Upper surface 318
, 320 and the upper surface 322 preferably have a height difference of 0.5 μm or more. In this case, it is preferable to provide the polyimide resin 326 on the insulating layer 168 to reduce the level difference so that the wiring 314 and 316 are not broken when formed over a large level difference. According to this structure, the first
When the support structure 302 and the second support structure 304 of the vertical cavity type surface emitting laser 132 are recessed in the micro bumps 306 and 308, the upper surface 322 of the vertical cavity surface emitting laser 132
1 can reliably prevent a load from being applied to the light emitting layer 24.

In the above embodiment, the optical module including the vertical cavity surface emitting laser and the field effect transistor has been described. However, as described below, a heterojunction bipolar transistor is provided instead of the field effect transistor. Is also good.

FIG. 13A shows a cross section of the optical module 330. The optical module 330 has two support structures, and is different from the optical module 2 shown in FIG. 10 in that the microbump does not contact the heterojunction bipolar transistor.
It is different from 00. In FIG. 13A, the same components as those of the optical module 200 shown in FIG. 10 are denoted by the same reference numerals.

The optical module 330 includes the first substrate 12
A vertical cavity surface emitting laser 202 supported on the first substrate 12 via the buffer layer 38, an electrode structure 204,
It has a first support structure 332, a second support structure 334, a heterojunction bipolar transistor 206, and a second substrate 11.

An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the second substrate 11, and the micro bumps 208, 336, and 3 are formed via the insulating film 21.
38 is provided on the second substrate 11. Although not shown, the micro bumps 208, 336, and 33
Numerals 8 are respectively connected to wirings having pads.

The vertical cavity surface emitting laser 202 is formed on the semiconductor multilayer 220 and the semiconductor multilayer 220 including the light emitting layer 24, a part of the p-type Bragg reflector 216 sandwiching the light emitting layer 24, and the n-type Bragg reflector 218. And an electrode 222 provided. The p-type Bragg reflector 216 is provided to cover the entire surface of the buffer layer 38.

Heterojunction bipolar transistor 206
Has a collector layer 224, a base layer 226, and an emitter layer 228, and a collector electrode 230, a base electrode 232, and an emitter electrode 234 electrically connected to these semiconductor layers. The base layer 226 is the emitter layer 2
28 and the collector layer 224, and the collector layer 224 is formed on a semiconductor multilayer 236 having the same semiconductor layer as the semiconductor multilayer 220 via a buffer layer 238.

The electrode structure 204 includes a semiconductor multilayer 240 composed of the same semiconductor layers as the semiconductor multilayer 220, and an electrode 242 provided on the semiconductor multilayer 240. The semiconductor multilayer 240 includes a portion of the p-type Bragg reflector 216, and the pn junction formed in the semiconductor multilayer 240 has been broken. As a result, the upper surface 24 of the electrode structure 204
4 is connected to the p-type Bragg reflector 216 of the vertical cavity surface emitting laser 202 with low resistance.

The first support structure 332 and the second support structure 334 include a semiconductor multilayer 236, a buffer layer 238, a collector layer 224, a base layer 226, and an emitter layer 228.
Semiconductor multilayers 340 each composed of the same semiconductor layer as
And 342, part of the insulating layer 246 covering the semiconductor multilayers 340 and 342, and the wiring 3 provided on the insulating layer 246.
46 and 348 respectively. Wiring 34
6 and 348 are electrically connected to the base electrode 232 and the emitter electrode 234, respectively.

Vertical cavity surface emitting laser 202, heterojunction bipolar transistor 206, first support structure 3
32, the second support structure 334, the side surface of the electrode structure 204, and the p-type Bragg reflector 216 are covered with an insulating film 246 made of silicon oxide or silicon nitride. The electrode 2 of the vertical cavity surface emitting laser 202 is formed on the insulating film 246.
Wiring 2 for electrically connecting 22 and collector electrode 230
48 are provided. Wirings 248, 346, and 34
8 is held on a polyimide film 350 provided on the insulating layer 246.

The upper surface 244 of the electrode structure 204, the upper surface 352 of the first support structure 332, and the upper surface 354 of the second support structure 334 project from the first substrate 12, respectively. The second substrate 11 is held such that the micro bumps 208, 336, and 338 are in contact with the upper surface 244 of the electrode structure 204, the upper surface 352 of the first support structure 332, and the second support structure 334, respectively. An ultraviolet curable resin 22 is filled between the first substrate 12 and the second substrate 11.

In the optical module 330, based on the voltage applied from the micro bump 336 to the base electrode 232 via the wiring 346, the micro bump 338 connects to the wiring 348, the emitter electrode 234, and the collector electrode 23.
0, and a voltage is applied to the n-type Bragg reflector 218 of the vertical cavity surface emitting laser 202 via the wiring 248. On the other hand, since a voltage is also applied to the p-type Bragg reflector 216 via the electrode structure 204, the vertical cavity surface emitting laser 202 can emit light.

According to this structure, since the upper surface of the vertical cavity surface emitting laser 202 does not contact the microbump, the second substrate 11 can be attached to the first substrate 12 without applying a load to the light emitting layer 24. Can be joined. Further, no load is applied to the heterojunction bipolar transistor 206.

To ensure that no load is applied to the vertical cavity surface emitting laser 202, FIG.
As shown in (b), the upper surfaces 352 and 354 of the first support structure 332 and the second support structure 334 are placed on the first substrate 12 with the upper surface 25 of the vertical cavity surface emitting laser 202.
It is preferably higher than 0. Such a structure is, for example, the semiconductor multilayer 340 and 342 and the insulating layer 2
46, an insulating layer 358 made of silicon oxide or silicon nitride having an appropriate thickness may be formed. The height difference between the upper surfaces 352 and 354 and the upper surface 250 is 0.5
μm or more is preferred. According to this structure, the first support structure 332 and the second support structure 334
Even when the vertical cavity surface emitting laser 202 is immersed in the vertical cavity surface emitting laser 202, the upper surface 250 of the vertical cavity surface emitting laser 202 is in contact with the second substrate 11, so that it is possible to reliably prevent a load from being applied to the light emitting layer 24.

As will be described below, a heterojunction bipolar transistor can be formed on a vertical cavity surface emitting laser.

FIG. 14A shows a cross section of the optical module 360. The optical module 360 comprises two support structures, the optical module 2 shown in FIG. 11 in that the microbumps do not contact the heterojunction bipolar transistor.
It is different from 60. In FIG. 14A, the same components as those of the optical module 260 shown in FIG. 11 are denoted by the same reference numerals.

The optical module 360 includes the first substrate 12
A vertical cavity surface emitting laser 262 supported on the first substrate 12 via the buffer layer 38, an electrode structure 362,
A first support structure 364 and a second support structure 366;
A heterojunction bipolar transistor 266 formed on a vertical cavity surface emitting laser 262;
And An insulating film 21 made of silicon nitride, silicon oxide, or the like is provided on the surface of the second substrate 11,
Micro bumps 368, 370, and 372 are provided on the second substrate 11 with the insulating film 21 interposed therebetween. Further, although not shown, the micro bumps 368, 370, and 372 are connected to wiring having pads, respectively.

The vertical cavity surface emitting laser 262 includes the light emitting layer 24, a part of the p-type Bragg reflector 276 sandwiching the light emitting layer 24, and an n-type Bragg reflector 278. p
The Bragg reflector 276 is provided to cover the entire surface of the buffer layer 38.

Heterojunction bipolar transistor 266
Has a collector layer 280, a base layer 282, and an emitter layer 284, and a base electrode 286 and an emitter electrode 288 that are electrically connected to the base layer 282 and the emitter layer 284, respectively. The base layer 282 is sandwiched between the emitter layer 284 and the collector layer 280, and the collector layer 280 is formed on the n-type Bragg reflector 278 of the vertical cavity surface emitting laser 262.

The electrode structure 362 includes the vertical cavity surface emitting laser 262, the collector layer 280, and the base layer 28.
2 and a semiconductor multilayer 374 composed of the same semiconductor layer as the emitter layer 284, and an electrode 376 provided on the semiconductor multilayer 374. The semiconductor multilayer 374 includes a portion of the p-type Bragg reflector 276, and the pn junction formed in the semiconductor multilayer 374 has been destroyed. As a result, the upper surface 378 of the electrode structure 362 is connected to the p-type Bragg reflector 276 of the vertical cavity surface emitting laser 262 with low resistance.

The first support structure 364 and the second support structure 366 are composed of the semiconductor multilayers 380 and 382 formed of the same semiconductor layer as the semiconductor multilayer 374, and a part of the insulating layer 296 covering the semiconductor multilayers 380 and 382. And portions of the wirings 384 and 386 provided on the insulating layer 296. The wirings 384 and 386 are held by a polyimide film 392 formed on the insulating layer 296, and are electrically connected to the base electrode 286 and the emitter electrode 288, respectively.

The vertical cavity surface emitting laser 262, the heterojunction bipolar transistor 266, the first support structure 3
64, the second support structure 366, the side surface of the electrode structure 362, and the p-type Bragg reflector 276 are covered with an insulating film 296 made of silicon oxide or silicon nitride.

The upper surface 378 of the electrode structure 362, the upper surface 388 of the first support structure 364, and the upper surface 390 of the second support structure 366 protrude from the first substrate 12, respectively. The substrate 11 is held such that the micro bumps 368, 370, and 372 are in contact with the upper surface 378 of the electrode structure 362, the upper surface 388 of the first support structure 364, and the upper surface 390 of the second support structure 366, respectively. I have. And the ultraviolet curable resin 22 is the first
Between the first substrate 12 and the second substrate 11.

In the optical module 360, based on the voltage applied to the base layer 282 from the micro bump 370 via the wiring 384 and the base electrode 286, the wiring 386, the emitter layer 284, the base layer 282, and the collector A negative charge is applied to n-type Bragg reflector 278 via layer 280. On the other hand, a positive voltage is applied from the microbump 368 to the p-type Bragg reflector 276 via the electrode structure 362, so that the vertical cavity surface emitting laser 262 can emit light.

According to this structure, the heterojunction bipolar transistor 266 provided on the vertical cavity surface emitting laser 262 does not come into contact with the micro-bump, so that no load is applied to the light emitting layer 24 and the second substrate Eleventh first
To the substrate 12.

To ensure that no load is applied to the vertical cavity surface emitting laser 262, FIG.
As shown in (b), the upper surfaces 388 and 390 of the first support structure 364 and the second support structure 366 are higher than the upper surface 394 of the heterojunction bipolar transistor 266 with respect to the first substrate 12. Is preferred. In such a structure, for example, an insulating layer 396 made of silicon oxide or silicon nitride having an appropriate thickness between the semiconductor multilayers 380 and 382 and the insulating layer 296 may be formed. The difference in height between the upper surfaces 388 and 390 and the upper surface 394 is preferably 0.5 μm or more. According to this structure, the first
Even when the support structure 364 and the second support structure 366 of the second embodiment are recessed in the micro bumps 370 and 372, the upper surface 394 of the heterojunction bipolar transistor 266 is not
It is possible to reliably prevent a load from being applied to the light emitting layer 24 in contact with the substrate 11.

Hereinafter, a method for manufacturing the optical module 360 will be described in detail as an example of the method for manufacturing the optical module described in this embodiment.

First, as shown in FIG.
A plurality of semiconductor layers forming a vertical cavity surface emitting laser 262; and a heterojunction bipolar transistor 266.
And a plurality of semiconductor layers constituting n ⁺
Epitaxial growth on a first substrate 12 of type GaAs.

Specifically, in order to form a p-type Bragg resonator 276, 24.5 pairs of p-type AlAs layers 402 and p-type GaAs layers 404 are alternately stacked. Further, in order to form the n-type Bragg resonator 278, 24.5 pairs of n-type AlAs layers 422 and n-type GaAs layers 420 are alternately stacked.

Further, barrier layers 410 and 412 are provided with the light emitting layer 24 interposed therebetween to form a quantum well layer, and the spacer layers 406 and 412 are formed to adjust the cavity length of the laser.
08, 414, and 418 are provided. Further, a GaAs layer 424 is provided between the base layer 282 and the emitter layer 284, and a graded layer 426 is formed on the emitter layer 284.
And a cap layer 428. Table 2 shows the thicknesses and impurity concentrations of these semiconductor layers.

[0144]

[Table 2]

Next, as shown in FIG. 16A, a metal film made of AuGe / Ni is formed on the cap layer 428 of the first substrate 12 on which the semiconductor layer shown in FIG. The electrode 376 having the electrode structure and the emitter electrode 288 are formed. In addition, electrodes 430 and 432 are formed as masks for forming the first support structure 364 and the second support structure 366. Thereafter, the cap layer 428, the graded layer 426, and the emitter layer 284 are formed using a mixed solution of sulfuric acid and hydrogen peroxide until the base layer 282 is exposed using the electrodes 288, 376, 430, and 432 as a mask. Etch.

Subsequently, a base electrode 286 made of Cr / Pt / Au is formed. Thereafter, heat treatment is performed to form an ohmic contact between these electrodes and the semiconductor layer.

As shown in FIG. 16B, using these electrodes 286, 288, 376, 430, and 432 as a mask, chlorine gas is used until at least the semiconductor layer constituting the p-type Bragg reflector 276 is exposed. The stacked semiconductor layers are etched by the dry etching method. Thereafter, a voltage is applied between the electrode 376 and the surface of the p-type Bragg reflector 276 to break a pn junction formed in the semiconductor layer in the electrode structure 362.

As shown in FIG. 16C, the first substrate 1
An insulating layer 296 is formed to cover the entire structure of the surface 2 and a polyimide film 22 is further formed. Thereafter, the electrodes 376, 2
86, a contact hole exposing a part of 288 is formed, electrically connected to the base electrode 286, electrically connected to the wiring 384 reaching the upper part of the first support structure 364, and the emitter electrode 288, Second support structure 366
Is formed to reach the upper part of.

Hereinafter, the connection with the second substrate 11 will be described in the first embodiment.
Perform in the same manner as described above. Thus, the optical module 360 shown in FIG. 14 is formed.

(Embodiment 5) FIG. 17 shows a cross section of an optical module 500 according to a fifth embodiment of the present invention. The optical module 500 has a microbump made of a low melting point metal, and is different from the optical module 10 of the first embodiment in that bonding between the first and second substrates is realized by alloying the microbump and an electrode receiving the microbump. Is different. FIG.
7, the same components as those of the optical module 10 shown in FIG. 1 are denoted by the same reference numerals.

In the optical module 500, the microbump 506 has a gold layer 502 formed on the insulating layer 21 and a bismuth layer 504 formed on the gold layer 502. Similarly, the micro-bump 512 also includes a gold layer 508 and a bismuth layer 510. Bismuth layers 504 and 510
At the interface between the electrodes 32 and 36, a layer is formed in which bismuth and the metal constituting the electrodes 32 and 36 are alloyed.

After the structure on the first substrate 12 is formed, the micro bumps 506 and 5 provided on the second substrate 11 are formed.
After the electrode 12 is brought into contact with the electrodes 32 and 36, in this state, the contact portion is heated to 350 ° C. or higher. The heating melts the bismuth, and the metal constituting the electrodes 32 and 36 is alloyed with the bismuth to form the micro bumps 50.
6 and 512 and the electrodes 32 and 36 are joined. Thereby, the first substrate 12 and the second substrate 11 are joined.

According to such a structure, since the joining of the two substrates is performed by alloying, it is not necessary to apply a load to the joining. Therefore, the load is hardly applied to the light emitting layer 24, and the light emitting efficiency of the vertical cavity surface emitting laser 14 does not deteriorate.

As is clear from the above description, it is not necessary to use the thermosetting resin as described in the first embodiment when joining the first substrate 12 and the second substrate 11 together. However, in order to maintain a stable bonding state between the first substrate 12 and the second substrate 11, the first substrate 12 and the second
1 may be satisfied.

The microbump using bismuth can be applied to the optical modules having various structures described in the first to fourth embodiments.

FIG. 18 shows an example in which a microbump using bismuth is applied to an optical module having a support structure. The optical module 520 shown in FIG.
Micro-bumps 526 comprising a gold layer 522 and a bismuth layer 524, a gold layer 528 and a bismuth layer 530
6 is different from the optical module 100 in FIG. In the case of this structure, the micro bump 526 is in contact with the metal constituting the wiring 108, and an alloy layer is formed at the interface.

FIG. 19 shows an example in which a microbump using bismuth is applied to an optical module having a heterojunction bipolar transistor. The optical module 540 shown in FIG. 19 includes gold layers 542, 548, 554, and 560 and a bismuth layer 54 on the second substrate 11, respectively.
In having micro-bumps 546, 552, 558, and 564 consisting of 4, 550, 556, and 562,
This is different from the optical module 200 of FIG. In the case of this structure, the micro bumps 552, 558, and 564 are in contact with the metal constituting the emitter electrode 234, the base electrode 232, and the collector electrode 230 or the wiring 170, respectively, and an alloy layer is formed at the interface. .

FIG. 20 shows an example in which a microbump made of bismuth is applied to an optical module having a support structure and a heterojunction bipolar transistor. The optical module 580 shown in FIG. 20 has micro bumps 5 formed of gold layers 582, 588, and 594 and bismuth layers 584, 590, and 596 on the second substrate 11, respectively.
It differs from the optical module 330 of FIG. 113 in that it has 86, 592, and 598. In the case of this structure, the micro bumps 586 and 592 are in contact with the metal constituting the wirings 348 and 346, and an alloy layer is formed at the interface.

With reference to FIG. 17 to FIG. 20, the optical module provided with the microbump made of bismuth has been described. However, as described in Examples 1 to 4,
The micro-bump is made of a metal other than bismuth, and the electrode structure and support structure that receives the micro-bump, or the vertical cavity surface emitting laser, so that the top surface of the vertical cavity surface emitting laser is made of bismuth. The electrode provided on the upper surface or the wiring provided on the support structure may be made of bismuth.

As described above, several embodiments of the present invention have been described in Embodiments 1 to 5. However, the structure described in each embodiment may be appropriately combined with the structure of another embodiment.

For example, the electrode structures shown in FIGS. 4A and 4B may be used for the optical modules of the second to fifth embodiments. The optical modules of Examples 2 to 5 each include one vertical cavity surface emitting laser. As shown in FIGS. 5A and 5B, a plurality of vertical cavity surface emitting lasers are arrayed. It may be arranged in a shape. Furthermore, although the connection with the optical fiber has been described with reference to FIG. 8, any of the optical modules according to the first or third to fifth embodiments may be modified to have the structure shown in FIG.

In the first to fifth embodiments, the first
As the substrate 12, a variety of semiconductor substrates other than n-type GaAs may be used. A substrate suitable for forming the semiconductor multilayer 30 constituting the vertical cavity surface emitting laser 14 can be used. For example, when forming a vertical cavity surface emitting laser having an InP-based active layer, an InP substrate may be used.

As will be apparent to those skilled in the art, a vertical cavity surface emitting laser may use a light emitting layer made of a semiconductor other than InGaAs. Either the n-type Bragg reflector or the p-type Bragg reflector may be provided close to the first substrate. However, the p-type Bragg reflector is provided so as to cover the entire first substrate. If provided close to the substrate, the resistance of the p-type Bragg reflector can be reduced.

As the second substrate 11, various conductive or insulating substrates can be used, but it is preferable that the second substrate 11 be made of a material having good thermal conductivity. In the case of using a conductive substrate, it is preferable to form an insulating film on the surface on which the microbump is formed. As the second substrate, a substrate provided with an AlN substrate and a diamond film and made of glass, silicon, aluminum oxide, or the like can be used.

[0165]

According to the present invention, the substrate on which the vertical cavity surface emitting laser is formed can be mounted on the sub-mount substrate without applying a large load to the light emitting layer so as to lower the light emitting efficiency. Thereby, an optical module having high luminous efficiency can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of an optical module according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a structure of a vertical cavity surface emitting laser used in the optical module of FIG.

3A to 3F are cross-sectional views illustrating a method for manufacturing the optical module shown in FIG.

FIGS. 4A and 4B are cross-sectional views showing a modification of the electrode structure used in the optical module according to the first embodiment.

FIGS. 5A and 5B are perspective views of first and second substrates that constitute an optical module including a plurality of vertical cavity surface emitting lasers arranged in an array.

FIGS. 6A and 6B are cross-sectional views illustrating a structure of an optical module according to a second embodiment of the present invention.

FIG. 7 is a graph showing light emission characteristics of the optical module shown in FIG.

FIG. 8 is a sectional view illustrating a connection between an optical module and an optical fiber according to a second embodiment of the present invention.

FIG. 9 is a sectional view showing a structure of an optical module according to a third embodiment of the present invention.

FIG. 10 is a sectional view showing the structure of another optical module according to the third embodiment of the present invention.

FIG. 11 is a sectional view showing the structure of still another optical module according to the third embodiment of the present invention.

FIGS. 12A and 12B are cross-sectional views illustrating the structure of an optical module according to a fourth embodiment of the present invention.

FIGS. 13A and 13B are cross-sectional views showing the structure of another optical module according to a fourth embodiment of the present invention.

FIGS. 14A and 14B are cross-sectional views showing the structure of still another optical module according to the fourth embodiment of the present invention.

FIG. 15 is a sectional view showing a structure of a vertical cavity surface emitting laser used in the optical module of FIG. 14;

16A to 16C are cross-sectional views illustrating a method for manufacturing the optical module shown in FIG.

FIG. 17 is a sectional view showing a structure of an optical module according to a fifth embodiment of the present invention.

FIG. 18 is a sectional view showing the structure of another optical module according to the fifth embodiment of the present invention.

FIG. 19 is a sectional view showing the structure of still another optical module according to the fifth embodiment of the present invention.

FIG. 20 is a sectional view showing the structure of still another optical module according to the fifth embodiment of the present invention.

FIG. 21 is a cross-sectional view illustrating a structure of a vertical cavity surface emitting laser mounted by a conventional method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 2nd board | substrate 12 1st board | substrate 13,15 Top surface 14 Vertical cavity surface emitting laser 16 Electrode structure 17,19 Bottom surface 18,20 Micro bump 21 Insulating layer 22 Ultraviolet curing resin 24 Light emitting layer 26,28 Bragg reflector 30, 34 Semiconductor multilayer 32, 36 Electrode 38 Buffer layer 90 Groove

────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kenzo Hatada 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-2-87584 (JP, A) (58) Field (Int.Cl. ⁶ , DB name) H01L 3/18

Claims (22)

(57) [Claims] A vertical cavity surface emitting laser supported on the first substrate, the semiconductor substrate including a top surface and a bottom surface, and a semiconductor multilayer including at least a light emitting layer; supported by the substrate Rutotomoni, main parts the vertical resonance
A second electrode having a first bump and a second bump, comprising an electrode structure that is made of a common material with the vertical cavity surface emitting laser and is electrically connected to the bottom surface of the vertical cavity surface emitting laser. A top surface of the vertical cavity surface emitting laser and an upper surface of the electrode structure projecting from the first substrate, and the first bump and the second bump are formed of the electrode structure. An optical module having a vertical cavity surface emitting laser, wherein the second substrate is held against the first substrate so as to be in contact with the upper surface and the upper surface of the vertical cavity surface emitting laser, respectively. 2. A first substrate is supported on the first substrate, and the top and bottom surfaces, small
Vertical cavity type having at least a semiconductor multilayer including a light emitting layer
A vertical cavity surface emitting laser supported by the first substrate and having a main part
It is formed by the same crystal growth as the rectangular surface emitting laser,
Electrically connected to the bottom surface of the vertical cavity surface emitting laser
Electrode structure and a second substrate having a first bump and a second bump.
The top surface of the vertical cavity surface emitting laser and the electrode structure.
A top surface protrudes from the first substrate and the first substrate
The bump and the second bump are connected to the upper surface of the electrode structure and the vertical surface.
Contact the upper surface of the vertical cavity surface emitting laser
The second substrate is held against the first substrate,
An optical module having a vertical cavity surface emitting laser. 3. A vertical cavity surface emitting laser supported on the first substrate and having a top surface, a bottom surface, and a semiconductor multilayer including at least a light emitting layer. An electrode structure electrically supported on the bottom surface of the vertical cavity surface emitting laser, and a first support structure supported on the first substrate and having a conductive upper surface. A first wiring for electrically connecting the upper surface of the vertical cavity surface emitting laser to the first support structure; and a second substrate having a first bump and a second bump. The upper surface of the electrode structure and the upper surface of the first support structure protrude from a first substrate, the first bump and the second bump forming the upper surface of the electrode structure and the first bump; The second substrate is connected to the first substrate so as to be in contact with the upper surface of the support structure, respectively.
An optical module having a vertical cavity surface emitting laser held on a substrate. 4. The electrode structure according to claim 1, wherein a main part of said electrode structure is said vertical resonance.
Made of the same material as the surface emitting laser
Item 3. An optical module having the vertical cavity surface emitting laser according to item 3.
Wool. 5. The first supporting structure according to claim 1, wherein a main part of the first supporting structure is the hanging part.
It is made of the same material as the vertical cavity surface emitting laser.
4. The vertical cavity surface emitting laser according to claim 3,
Optical module. And wherein said supported on the first substrate transistor, the third further comprising a bump formed on the second substrate, the bumps of said third contact with a portion of the transistor An optical module comprising the vertical cavity surface emitting laser according to claim 1. 7. A transistor supported on the first substrate, a second support structure formed on the first substrate and having a conductive top surface, the transistor and the second support structure. And a third wiring provided on the second substrate, wherein the third bump is in contact with an upper surface of the second support structure. Item 4. An optical module comprising the vertical cavity surface emitting laser according to item 3 . 8. A vertical cavity surface emitting laser supported by the first substrate, having a top surface, a bottom surface, and a semiconductor multilayer including at least a light emitting layer. a bipolar transistor formed on the upper surface of the mold surface emitting laser, when Ru is supported on the first substrate
Both are made of the same material as the vertical cavity surface emitting laser.
It consists of a fee, provided and electrically connected to the electrode structure on the bottom surface of the vertical cavity surface emitting laser, and a second substrate having a first bump and a second bump, the electrode structure Has a top surface protruding from the first substrate,
The second substrate is held against the first substrate such that the first bump and the second bump are in contact with the upper surface of the electrode structure and a portion of the upper surface of the bipolar transistor, respectively. An optical module having a vertical cavity surface emitting laser. 9. A vertical cavity surface emitting laser supported by the first substrate, having a top surface, a bottom surface, and a semiconductor multilayer including at least a light emitting layer. A bipolar transistor formed on an upper surface of a surface-emitting laser, an electrode structure supported on the first substrate, and electrically connected to a bottom surface of the vertical-cavity surface-emitting laser; A first support structure having an upper surface, the first support structure being supported by the first substrate such that the upper surface protrudes; a first electrically connecting the bipolar transistor to the upper surface of the first support structure; And a second substrate having a first bump and a second bump, wherein the upper surface of the electrode structure and the upper surface of the first support structure are the first substrate.
And the first bump and the second
A vertical cavity surface emitting laser in which the second substrate is held against the first substrate such that the bumps of the second substrate are in contact with the upper surface of the electrode structure and the upper surface of the first support structure, respectively. module. 10. The electrode structure according to claim 1, wherein a main part of said electrode structure is said vertical common.
It is made of a common material with the
An optical module having the vertical cavity surface emitting laser according to claim 9.
Jules. Wherein said first supporting structure according to claim 3 also <br/> is provided close to the vertical cavity surface emitting laser has a vertical cavity surface emitting laser according to 9 Optical module. 12. The method of claim consisting of said first support structure and at least the semiconductor multilayer made of the same semiconductor as the semiconductor layer and the insulating layer provided on the semiconductor layer, disposed on the insulating layer electrode 10. An optical module having the vertical cavity surface emitting laser according to 3 or 9 . 13. The vertical cavity surface according to claim 3 or 9 comprising a first support structure at least the semiconductor multilayer made of the same semiconductor as the semiconductor layer and a metal film provided on said semiconductor layer An optical module having a light emitting laser. 14. A distance from the first substrate to an upper surface of the first support structure is greater than a distance from the first substrate to an upper surface of the vertical cavity surface emitting laser.
10. An optical module having the vertical cavity surface emitting laser according to 3 or 9 . 15. The transistor is a field-effect transistor or a heterojunction bipolar transistor.
Optical module having a vertical cavity surface emitting laser according to claim 6 or 7 that. Optical module having a vertical cavity surface emitting laser according to any of claims 1 to 15 in which the adhesive is filled between the 16. and the first substrate and the second substrate. 17. The vertical cavity surface emitting laser having a plurality of said electrode structures, wherein said plurality of electrode structures are located at the vertices of a polygon on said first substrate, and said plurality of vertical cavity surface emitting lasers are provided. vessel surface emitting laser is an optical module having a vertical cavity surface emitting laser according to any one of claims 1, which is located inside the polygonal 9. 18. The method according to claim 18, wherein the first and second bumps are at 350.degree.
Optical module having a vertical cavity surface emitting laser according to claim 1 made of a metal having a melting point below 9. 19. The upper surface and a vertical-cavity surface wherein the upper surface is a vertical cavity surface emitting according to claim 1 made of a metal having a melting point of 350 ° C. or less 9 of emitting laser of the electrode structure An optical module having a laser. 20. The vertical cavity surface emitting lasers, vertical cavity surface emitting laser according to any one of claims 1 to 9 having further a first and a second Bragg reflector sandwiching the light-emitting layer An optical module having: 21. Corresponding to the position of the vertical cavity surface emitting laser is provided, from claim 1 the guide hole receiving the optical fiber is provided on the back surface of the first substrate 9
An optical module comprising the vertical cavity surface emitting laser according to any one of the above. 22. A vertical cavity surface emitting device on a first substrate.
Growth of semiconductor multilayer including semiconductor layer to be laser emission layer
And etching the semiconductor multilayer to form the first group.
A vertical cavity surface emitting device including the light emitting layer protruding from a plate
An optical laser portion, a shape protruding from the first substrate,
The main part is made of the same material as the vertical cavity surface emitting laser part.
Forming the configured electrode structure, and forming the first bump and the second bump on the second substrate
A process, wherein the first bump and the second bump are formed on the first substrate.
Upper surface of the vertical cavity surface emitting laser portion protruding from
On the upper surface of the electrode structure protruding from the first substrate, respectively
The second substrate is held against the first substrate so that
Having a vertical cavity surface emitting laser.
Manufacturing method of optical module.