JP2733131B2 - Photosensitive resin composition - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a photosensitive resin composition that can be used as a constituent material of a resist used for manufacturing a semiconductor device and the like.

(Prior art) In processing a substrate in the manufacture of a semiconductor device, for example, forming a metal wiring pattern in an IC, a metal film for wiring is formed on the entire surface of a substrate to be processed, a resist film is formed thereon, and this is exposed and developed. In this procedure, a resist pattern is obtained, a metal film is etched using the resist pattern as a mask, and then the resist pattern is removed.

However, as ICs become more highly integrated and operate at higher speeds, the use of ultra-fine wiring patterns and the adoption of multi-layer wiring are being carried out. In this ultra-miniaturization, the pattern aspect ratio tends to be increased to reduce wiring resistance. Therefore, the step on the substrate to be processed becomes larger. Therefore, when a resist pattern is formed on a substrate to be processed, the following problems occur. That is, a step may become larger than the depth of focus of the reduced projection exposure apparatus, so that it is difficult to form a resist pattern of a target size using the reduced projection exposure apparatus. In particular, when performing patterning in the submicron region, the depth of focus becomes increasingly shallow because a reduced projection exposure apparatus equipped with a lens having a large numerical aperture is used. There is a possibility that a pattern cannot be formed only with such a single-layer resist.

 Therefore, the conventional technology that solves the above difficulties
For example, in the literature (Journal Of Electrochemical Societ
y: SOLID-STATE SCIENCE AND TECHNOLOGY ((Journal
 Of Electrochemical Society: Solid
State Science and Technology)132
(5) The technique disclosed in (1985, 5) pp. 1178 to 1182)
Was known. This technique is called a two-layer resist method.
In addition to the resist pattern formation technology, the deep ultraviolet region (200
Using a positive resist with a sensitivity of ~ 300 (nm))
Was something.

Here, the two-layer resist method is as described below.

First, a thermosetting resin is formed thickly on a substrate to be processed having a step, and is thermally cured to flatten the substrate. An extremely thin photosensitive resin layer having high resistance to etching by oxygen plasma is formed thereon, and then the photosensitive resin layer is exposed and developed to form a pattern thereof.
Next, using this pattern as a mask, the thermosetting resin layer is etched by reactive ion etching (O ₂ -RIE) using oxygen gas to obtain a two-layer resist pattern having a high aspect ratio. Further, the underlying metal layer on the substrate to be processed is etched using the two-layer resist pattern as a mask.

The advantage of the two-layer resist method is that the pattern of the photosensitive resin layer is formed on the thick planarization layer, so that a fine pattern with a high aspect ratio can be formed without being affected by the underlying substrate and thus without dimensional fluctuation. What you can do.

As a resist used for such a photosensitive resin layer, there is a resist containing silicon. According to the above-mentioned literature, a poly (trimethylsilylmethyl methacrylate-3-oximin-2-butanone methacrylate) copolymer is disclosed. . This resist uses deep ultraviolet (Deep-UV) and has a 1 m line and space pattern of 250 mJ / cm.
^It had a sensitivity that could be resolved at a dose of ² , and had a minimum resolution of 0.75 μm.

(Problems to be Solved by the Invention) However, since the above-mentioned conventional resist has a low silicon layer content of 9.6% by weight, the etching rate by O ₂ -RIE is as fast as 15 μm / min. That is, there is a problem that O ₂ -RIE resistance is low. There is also a problem that the resolving power is not sufficient.

The present invention has been made in view of the above points, and accordingly, it is an object of the present invention to solve the above problems and to provide a photosensitive resin composition excellent in film quality and processing accuracy.

According to the present invention, there is provided a polysiloxane having at least one group selected from the group consisting of an unsaturated group, an alkyl group and a halogenated alkyl group. A photosensitive resin composition comprising a derivative, polysilylene, and a sensitizer has the following configuration.

The polysiloxane derivative is represented by the following formula, or represented by the following formula, or those having different substituents (including three or more types. The same applies to the following mixtures and copolymers). A) a mixture of those represented by the following formulas with different substituents or a mixture of those represented by the following formulas and a copolymer represented by the following formula, or a copolymer obtained by a combination similar to the above mixture. I do. In the formula, TMS is a trimethylsilyl group. R _{1 to} R ₄ are groups selected from the group consisting of unsaturated groups, alkyl groups and halogenated alkyl groups, and may be the same or different. Also, n,
m is a positive integer. ).

In addition, the polysiloxane derivative represented by the above formula was disclosed by the applicant of the present application in Japanese Patent Application Laid-Open No. 63-210839.
The polysiloxane derivative represented by the formula is obtained by converting trichlorosilane as a raw material used in the synthesis method described in the publication to dichlorosilane. It is a compound that is easily obtained.

These polysiloxane derivatives have a weight average molecular weight of 2,2.
Those having a size of about 0000 to 100,000 do not gel at the synthesis stage and can be easily obtained. But,
Those having a weight average molecular weight of less than 2,000 are difficult to crystallize and thus are unsuitable for forming a resist pattern, and the amount of exposure required for patterning is extremely large. Therefore,
In consideration of use as a resist, it is preferable that the polysiloxane derivative represented by the formula or the formula has a weight average molecular weight of 2,000 to 100,000. It is common knowledge that the OH groups at both ends of the polysiloxane derivative are protected with an inactive group such as a trimethylsilyl group from the viewpoint of storage stability, and it is preferable to use that method in the present invention. .

Further, polysilylene, which is the second component of the photosensitive resin composition, preferably has no sublimability. In the present invention, a polysilylene represented by the following formula, a polysilylene represented by the following formula, and one or more selected from polysilylene represented by the following formula (where R _{A to} R _P
Is a group selected from the group consisting of the following, and may be all the same or partially or entirely different.

... A chain, branched or cyclic alkyl group having 10 or less carbon atoms.

... A phenyl group having no substituent.

... a naphthyl group having no substituent.

... A phenyl group having a group selected from a nitro group, an alkoxy group having 5 or less carbon atoms, and a halogen group.

... A naphthyl group having a group selected from a nitro group, an alkoxy group having 5 or less carbon atoms, and a halogen group.

... biphenyl group having no substituent.

... A biphenyl group having a group selected from a nitro group, an alkoxy group having 5 or less carbon atoms, and a halogen group.

The silicon number 1 in the formula is an integer satisfying 2 ≦ l ≦ 10. Further, the silicon numbers i, j, k in the formula are 0 ≦ i ≦ 7, 1
≦ j ≦ 8, 1 ≦ k ≦ 8 and an integer satisfying i + j + k ≦ 9. The silicon number q in the formula is an integer satisfying 2 ≦ q ≦ 10. ).

The absorption wavelength and the magnitude of the absorption of polysilylene can be easily changed by changing the number of silicon and the kind of the substituent of the polysilylene.

Here, the addition ratio of polysilylene to polysiloxane derivative (mol number of polysilylene × 100) / (mol number of polysilylene + mol number of polysiloxane derivative) is 0.1.
A value of 5 to 10 mol% is preferred. If the amount is less than 0.5 mol%, the sensitivity of the photosensitive resin composition becomes extremely low, and 10 mol
%, The adhesion of the film of the present photosensitive resin composition to the substrate is reduced, or a good film cannot be obtained because polysilylene crystals are precipitated on the film. O ₂ -RIE required when lower etching in the case of using the composition as an upper resist in the two layer resist method
This is because the silicon content may be reduced to such an extent that the resistance may be impaired.

Although various sensitizers can be used as the third component of the photosensitive resin composition, it is particularly preferable to use a hydrodrosilane compound having a property of capturing silylene (described later). . This hydrosilane compound is
Those having a Si-H bond in one molecule and being solid from the viewpoint of use as a resist are desirable.
In the present invention, the compound is selected from the compounds represented by the following formulas (I) to (V) (provided that (I) and (II)
R in the formula, R ′ in the formula (III) represents an alkyl group, a phenyl group having no substituent, a phenyl group having a substituent, a naphthyl group having no substituent, a substituent A naphthyl group, a biphenyl group having no substituent,
This is a group selected from biphenyl groups having a substituent. In the formulas (III) to (V), R represents at least one hydrogen and the other hydrogen, an alkyl group, a phenyl group having no substituent, a phenyl group having a substituent, or a substituent. It is a group selected from a naphthyl group having no substituent, a naphthyl group having a substituent, a biphenyl group having no substituent, and a biphenyl group having a substituent. Further, in the equations (I) to (V), r, s, t, u, v, w are given by r + s =
4, r ≧ 1, s ≧ 1, t + u = 6, u ≧ 1, 1 ≦ v ≦
5, a positive integer satisfying 1 ≦ w ≦ 6. ).

_{(R) r Si (H)} s ... (I) (R) t Si 2 (H) u ... (II) Further, in this photosensitive resin composition, the addition amount of the hydrosilane compound is 1 to 10 times
It is preferable to set the amount to l equivalent. If the amount is less than this amount, the sensitizing effect is small, and if the amount is more than this amount, there is a problem in film-forming properties.

(Function) According to the structure of the present invention, polysilylene has its structure (for example, chain, cyclic (see the above formula), presence or absence of branching (see the above formula)), the number of silicon contained in the polysilylene, and the number of substituents. Wavelength 200 by changing the type of
It absorbs light in a wide range of up to 400 nm and receives light of that wavelength, whereby the Si-Si bond is broken and the photosensitizer generates active species such as silicon radicals and silylene. That is, polysilylene having a structure as shown in the above formulas to formulas efficiently generates the above-described active species when receiving light in the wavelength range of 200 to 400 nm, in view of the number of silicon atoms and the type of substituents. . Therefore, when the polysiloxane derivative has an unsaturated group, a silicon radical is added to the unsaturated group to initiate polymerization. In addition, when the polysiloxane derivative has an alkyl group and / or a halogenated alkyl group, polymerization starts because the silicon radical abstracts hydrogen from the alkyl group and abstracts a halogen from the halogenated alkyl group. The polymerized portion of the polysiloxane derivative becomes insoluble in the organic solvent. Therefore, a desired resist pattern can be obtained by selectively irradiating the photosensitive resin composition with light.

In addition, since the photosensitive resin composition contains a sensitizer, the composition becomes more sensitive than the case where it is not contained. In addition, as the sensitizer, the hydrosilane compounds represented by the above formulas (I) to (V) are used. Hydrosilane compounds have the property of trapping silylene. Therefore, the hydrosilane compound captures silylene, which is not directly involved in the gelation of the polysiloxane derivative, among the active species emitted from polysilylene by light irradiation, whereby the sensitivity of the photosensitive resin composition can be increased.

In addition, the polysiloxane derivative has a silicon content of at least 10% by weight, and as a result, a photosensitive resin composition having excellent O ₂ -RIE resistance can be obtained.

(Examples) Hereinafter, examples of the photosensitive resin composition of the present invention will be described. In the following examples, in order to facilitate understanding of the present invention, the amount of chemicals used, the film thickness of the film, the baking temperature and time, and the etching conditions are set to specific values. It should be understood that this is merely an example and the invention is not limited to only these values.

<Example 1> * Preparation of photosensitive resin composition First, as a polysiloxane derivative, both R ₃ and R ₄ in the above formula were allyl groups and the weight average molecular weight M _w was 20,000.
93 g (1 mol) of polyallylsilsesquioxane of the formula, and 10.8 g (0.031 mol) of dodecamethylcyclohexasilane represented by the following formula (a), which is one kind of polysilylene represented by the above formula as polysilylene in this case: In this case, 10.6 g (0.0775 mol) of dimethylphenylsilane represented by the following formula (b), which is one of the hydrosilane compounds represented by the above formula (I), was dissolved in 837 g of xylene as a sensitizer, and the solution was dissolved in a solution having a diameter of 0.2. The solution is filtered through a membrane filter having pores of μm to prepare a coating solution of the photosensitive resin composition of Example 1. However, in the formulas (a) and (b), Me is a methyl group,
(B) In the formula, Ph represents a phenyl group. (C) below
The same applies to each equation of (h).

* Patterning Experiment (Part 1) Next, using the photosensitive resin composition of Example 1 and a Xe-Hg lamp as a light source for exposure, a patterning experiment is performed in the following procedure.

First, in order to form a lower resist layer on the silicon substrate, a photoresist (MP2400 manufactured by Shipley Co., Ltd. in this experimental example) is applied on the silicon substrate by a spin coating method under predetermined conditions, and then a temperature of 200 ° C. The sample is placed in an oven for 1 hour to cure the photoresist. Thus, a lower resist layer having a thickness of 1.5 μm was formed.

Next, the photosensitive resin composition of Example 1 was applied on the lower resist layer by a spin coating method so that the film thickness became 0.2 μm, and then the sample was heated to 80 ° C. using a hot plate.
Pre-baking at a temperature of 1 minute.

Next, a mask having various line-and-space test patterns having a minimum line width of 0.5 μm was brought into close contact with this sample, and an exposure apparatus equipped with a Xe-Hg lamp and a CM250 cold mirror was used. In the embodiment, exposure is performed by using a PLA501 aligner manufactured by Canon Inc. while changing the exposure amount.

Next, the exposed sample is developed by immersing it in a 1: 1 mixed solution (volume ratio) of methyl isobutyl ketone and isopropyl alcohol (IPA) for 45 seconds, and then immersed in IPA for 30 seconds to rinse. And then baked for 1 minute at a temperature of 60 ° C. using a hot plate.

Observation of the sample after development revealed that the exposure (▲ D ^0.5 _m ▼) at which the residual film ratio was 50% of the initial film thickness (in this example, the film thickness after spin coating was 0.2 μm) was determined by the exposure apparatus. 1.2 count (here, 1 count (ct) = 39 mJ / cm ² ; the same applies hereinafter).
It turned out to be. When the obtained resist pattern was observed with a scanning electron microscope (SEM), the minimum resolution was 0.5 μm line and space (L / S), the same as the minimum size of the mask used. I understand. In addition, since the minimum line width of the test pattern used in this experiment was 0.5 μm, only a resolution of 0.5 μm could be confirmed, but the photosensitive resin composition of Example 1 had a higher resolution. It is to be understood that the same applies to the patterning experiments of each of the following examples.

* Patterning experiment (Part 2) A patterning experiment was performed in the same manner as the above-mentioned patterning experiment (Part 1) except that the photosensitive resin composition of Example 1 was used and the light source used for exposure was a KrF excimer laser. Do.

Note that a laser oscillator manufactured by Lambda Physics Co., Ltd. is used. This laser oscillator
An irradiation amount of 0.50 mJ / cm ² can be obtained, and the exposure amount can be controlled by the number of pulses.

As a result, the sensitivity (▲ D ^0.5 _n ▼) was found to be 50 mJ / cm ² . It was also found that a 0.5 μm line and space pattern could be resolved.

* Patterning Experiment (Part 3) Further, a patterning experiment by the two-layer resist method using the photosensitive resin composition of Example 1 as an upper layer resist is performed as described below.

First, a lower resist layer (MP2400 layer) and a pattern of the photosensitive resin composition of the first example are formed in the same procedure as in the patterning experiment (part 1). However, in this patterning experiment, the thickness of the lower resist layer was 2 μm, the baking temperature before exposure of the photosensitive resin composition of Example 1 formed on the lower resist was 60 ° C., and Xe-Hg
The exposure amount of the lamp is counted 1.8 times, the developing time is 30 seconds, and the rinsing time is 20 seconds.

Next, this sample is put into a parallel plate type dry etching apparatus (DEM451 manufactured by Nidec Anelva Co., Ltd. in this embodiment). Then, the O ₂ gas pressure is 1.0 Pa, the O ₂ gas flow rate is 20 SCCM, R
The lower resist layer is etched under the conditions that the F power density is 0.12 W / cm ² and the etching time is 35 minutes.

When the cross section of the two-layer resist pattern obtained after this etching was observed using an SEM, a 0.5 μm line
It was found that a rectangular line-and-space pattern having an aspect ratio of 4 was formed.

As is clear from the results of the above-described patterning experiments,
It can be understood that the photosensitive resin composition of Example 1 is superior to the conventional photosensitive resin in both sensitivity and resolution.

* O ₂ -RIE resistance findings Next, the O ₂ -RIE resistance of the photosensitive resin composition of Example 1 to investigate as follows.

First, the photosensitive resin composition of Example 1 was applied to a thickness of 0.2 μm on a silicon substrate by a spin coating method.
This sample is baked on a hot plate at a temperature of 60 ° C. for 1 minute.

Next, this sample is placed in a DEM451 dry etching apparatus and then etched under the same conditions as the dry etching conditions in the patterning experiment (part 3). However, the etching time was 20 minutes.

After the completion of the etching, the amount of film reduction of the photosensitive resin composition film of Example 1 was measured using a film thickness meter (Talistep manufactured by Taylor Hobson), and it was 48 nm.

The etching rate of the photosensitive resin composition of Example 1 at the time of this etching is 48) /20=2.4 nm / min, and the etching rate of the conventional photosensitive resin is 15 nm / min. Considering that the etching conditions of Example 1 are less strict than those of this example, the photosensitive resin composition of Example 1
It can be understood that O ₂ -RIE resistance is excellent.

Example 2 Next, the photosensitive agent was changed to polysilylene 1 represented by the above formula.
The photosensitive resin composition of Example 2 was prepared in the same manner as in Example 1 except that the seed was 1,2,3,4,5-pentaphenylheptamethylpentasilane represented by the following formula (c). To prepare a coating solution.

Next, the sensitivity (樹脂 D ^0.5 _n ▼) and the resolving power of the photosensitive resin composition of Example 2 are examined by the same procedure as that of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 2 (▲ D
^0.5 _n ▼) was found to be 50 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

Example 3 Next, the photosensitive agent was changed to polysilylene 1 represented by the above formula.
Coating of the photosensitive resin composition of Example 3 in the same manner as in Example 1 except that 1,1,4,4-tetraphenylhexamethyltetrasilane represented by the following formula (d) was used as a seed. Prepare solution.

Next, the sensitivity (樹脂 D ^0.5 _n ▼) and the resolving power of the photosensitive resin composition of Example 3 are examined by the same procedure as that of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 3 (▲ D
^0.5 _n ▼) was found to be 100 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

Example 4 Next, the photosensitive agent was changed to polysilylene 1 represented by the above formula.
A coating solution of the photosensitive resin composition of Example 4 is prepared in the same manner as in Example 1 except that the seed is 1,5-diphenyldecamethylpentasilane represented by the following formula (e).

Next, the sensitivity (樹脂 D ^0.5 _n ▼) and the resolving power of the photosensitive resin composition of Example 4 are examined by the same procedure as the procedure of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 4 (▲ D
^0.5 _n ▼) was found to be 90 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

Example 5 Next, a polysiloxane derivative, poly - there in (allyl chloromethyl silsesquioxane) That polysiloxane derivatives of the formula R _3, R ₄ each is an allyl group and or chloromethyl group copolymer And the weight average molecular weight _Mw is 36.000
A coating solution of the photosensitive resin composition of Example 5 is prepared in the same manner as in Example 1 except that

Next, the sensitivity (樹脂 D ^0.5 _n ▼) and the resolving power of the photosensitive resin composition of Example 5 are examined by the same procedure as that of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 5 (▲ D
^0.5 _n ▼) was found to be 65 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

Example 6 Next, the polysiloxane derivative was a polyvinylsiloxane (a polysilixane derivative in which both R ₁ and R ₂ in the above formula were vinyl groups) having a weight average molecular weight of 24,000, and a sensitizer was The photosensitive resin of Example 6 was prepared in the same manner as in Example 1 except that p-bis (dimethylsilylbenzene) represented by the following formula (f), which was one of the compounds represented by the above formula (III), was used. Prepare a coating solution of the composition.

Next, the sensitivity (樹脂 D ^0.5 _n ▼) and the resolving power of the photosensitive resin composition of Example 6 are examined by the same procedure as the procedure of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 6 (▲ D
^0.5 _n ▼) was found to be 250 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

Example 7 Next, the procedure was carried out except that the sensitizer was 1,3-diphenyltetrakis (dimethylsiloxy) disiloxane represented by the following formula (g), which was a kind of hydrosilane compound similar to the above formula (IV). A coating solution of the photosensitive resin composition of Example 7 is prepared in the same manner as in Example 1.

Next, the sensitivity (樹脂 D ^0.5 _nの) and the resolving power of the photosensitive resin composition of Example 7 are examined by the same procedure as the procedure of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 7 (▲ D
^0.5 _n ▼) was found to be 45 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

Example 8 Next, a sensitizer was used as a hydrosilane compound represented by the above formula (V), which is one of the following 1,3,5,7 represented by the following formula (h).
A coating solution of the photosensitive resin composition of Example 8 was prepared in the same manner as in Example 1 except that tetramethylcyclotetrasiloxane was used.

Next, the sensitivity (樹脂 D ^0.5 _n ▼) and the resolving power of the photosensitive resin composition of Example 8 are examined by the same procedure as that of the patterning experiment (No. 2) of Example 1.

As a result, the sensitivity of the photosensitive resin composition of Example 8 (▲ D
^0.5 _n ▼) was found to be 70 mJ / cm ² . Also, 0.5μ
It was found that m line and space patterns were resolved.

In order to clarify the difference between the photosensitive resin compositions of the respective examples, the compositions of the respective photosensitive resin compositions of Examples 1 to 8 described above, and their sensitivities and resolutions are collectively shown in Appendix 1.

(Effects of the Invention) As is clear from the above description, the photosensitive resin composition of the present invention is a polysiloxane derivative known to have high O ₂ -RIE resistance, and includes an unsaturated group, an alkyl group, A polysiloxane derivative having at least one functional group selected from halogenated alkyl groups, a polysilylene that efficiently generates a silyl radical highly reactive with the functional group, and a sensitizer comprising a hydrosilane compound And high sensitivity, high resolution, and high O ₂ -RIE resistance.

Therefore, a photosensitive resin composition excellent in film quality and processing accuracy can be provided.

Further, according to the photosensitive resin composition of the present invention, the wavelength of 200 to 400 can be obtained by appropriately selecting the structure of polysilylene (for example, whether or not there is a branch, the number of silicon, and the type of substituent).
Since the light absorption wavelength can be changed over a wide range of nm,
It becomes possible to form resists for XeCl excimer laser, KrF excimer laser, and ArF excimer laser.

Claims (9)

(57) [Claims] 1. A photosensitive resin composition comprising a polysiloxane derivative having at least one group selected from the group consisting of an unsaturated group, an alkyl group and a halogenated alkyl group, polysilylene, and a sensitizer. The polysiloxane derivative is represented by the following formula, and the polysilylene is at least one selected from polysilylene represented by the following formula, polysilylene represented by the following formula, and polysilylene represented by the following formula: Wherein the sensitizer is selected from hydrosilane compounds represented by the following formulas (I) to (V). However, in the formula, TMS is a trimethylsilyl group.
R ₁ and R ₂ are groups selected from the group consisting of unsaturated groups, alkyl groups and halogenated alkyl groups, and may be the same or different. Further, n is a positive integer. In addition, R _{A to} R _P in the formulas (1) to (4) are groups selected from the group consisting of the following (1), and may be the same or different. ... A chain, branched or cyclic alkyl group having 10 or less carbon atoms. ... A phenyl group having no substituent. ... a naphthyl group having no substituent. ... A phenyl group having a group selected from a nitro group, an alkoxy group having 5 or less carbon atoms, and a halogen group. ... A naphthyl group having a group selected from a nitro group, an alkoxy group having 5 or less carbon atoms, and a halogen group. ... biphenyl group having no substituent. ... A biphenyl group having a group selected from a nitro group, an alkoxy group having 5 or less carbon atoms, and a halogen group. The silicon number 1 in the formula is an integer satisfying 2 ≦ l ≦ 10. Further, the silicon numbers i, j, k in the formula are 0 ≦ i ≦ 7, 1
≦ j ≦ 8, 1 ≦ k ≦ 8 and an integer satisfying i + j + k ≦ 9. The silicon number q in the formula is an integer satisfying 2 ≦ q ≦ 10. Further, R in formulas (I) and (II) and R ′ in formula (III)
Is an alkyl group, a phenyl group having no substituent, a phenyl group having a substituent, a naphthyl group having no substituent, a naphthyl group having a substituent, Unsubstituted biphenyl group and biphenyl group having a substituent. (III)-(V)
R in the formula is at least one is hydrogen and the other is hydrogen, an alkyl group, a phenyl group having no substituent, a phenyl group having a substituent, a naphthyl group having no substituent, It is a group selected from a naphthyl group having a substituent, a biphenyl group having no substituent, and a biphenyl group having a substituent. Further, in the equations (I) to (V), r, s, t, u, v, w are r + s = 4, r ≧ 1, s ≧ 1, t
+ U = 6, a positive integer satisfying u ≧ 1, 1 ≦ v ≦ 5, 1 ≦ w ≦ 6. 2. The photosensitive resin composition according to claim 1, wherein, instead of the polysiloxane derivative represented by the formula,
A photosensitive resin composition containing a polysiloxane derivative represented by the following formula (wherein TMS is a trimethylsilyl group; and R ₃ and R ₄ are an unsaturated group, an alkyl group and a halogen A group selected from the group consisting of fluorinated alkyl groups, which may be the same or different.
M is a positive integer. ). 3. The photosensitive resin composition according to claim 1, wherein the unsaturated group is a vinyl group (CH ₂ CHCH—) or an allyl group (C
H ₂ = CHCH ₂ −), And a 3-butenyl group (CH ₂ CHCH—CH ₂ —CH ₂ —). 4. The photosensitive resin composition according to claim 1, wherein the alkyl group is a methyl group, an ethyl group, a normal propyl group, an isopropyl group, a normal butyl group, an isobutyl group, and a tertiary butyl group. A photosensitive resin composition (except that all the substituents of the polysiloxane derivative are tertiary butyl groups). 5. The photosensitive resin composition according to claim 1, wherein said halogenated alkyl group is chloromethyl group, chloroethyl group, chloropropyl group, chlorobutyl group, bromomethyl group, bromoethyl group, bromopropyl group, bromobutyl. Group, iodomethyl group, iodoethyl group, iodopropyl group and iodobutyl group (provided that the number of halogens in each of the halogenated alkyl groups is 1 or more and the maximum possible number in the group) Any number within the following range may be used.) 6. The photosensitive resin composition according to claim 1, wherein the polysiloxane derivative has a weight average molecular weight of 2,000.
A photosensitive resin composition characterized by being in the range of from 100,000 to 100,000. 7. The photosensitive resin composition according to claim 1, wherein instead of the polysiloxane derivative represented by the formula,
A photosensitive resin composition comprising a copolymer or a mixture of the polysiloxane derivative represented by the above formula and the polysiloxane derivative according to claim 2. 8. The photosensitive resin composition according to claim 1, wherein an addition ratio of the polysilylene to the polysiloxane derivative is 0.5 to 10 mol%. 9. The photosensitive resin composition according to claim 1, wherein the amount of the sensitizer is 1 to 10 times the amount of the polysilylene.
l A photosensitive resin composition characterized in that the amount is equivalent.