JP2662554B2 - Removal method of polyimide film - Google Patents
Removal method of polyimide filmInfo
- Publication number
- JP2662554B2 JP2662554B2 JP2541890A JP2541890A JP2662554B2 JP 2662554 B2 JP2662554 B2 JP 2662554B2 JP 2541890 A JP2541890 A JP 2541890A JP 2541890 A JP2541890 A JP 2541890A JP 2662554 B2 JP2662554 B2 JP 2662554B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide film
- semiconductor device
- polyimide
- removal method
- immersing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置上に被覆したポリイミド膜の除去
方法に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing a polyimide film coated on a semiconductor device.
従来の技術 近年、ポリイミド膜は、半導体装置の保護膜，間絶縁
膜として広く利用されるようになってきた。しかしなが
ら半導体装置の製造工程中において工程トラブル等で半
導体基板上に形成したポリイミド膜を除去する必要もた
びたび生じる。この時、ポリイミド膜は一般に約400℃
前後のアニール処理が施されているため、エッチング除
去が非常に困難である。2. Description of the Related Art In recent years, a polyimide film has been widely used as a protective film and an interlayer insulating film of a semiconductor device. However, during the manufacturing process of the semiconductor device, it is often necessary to remove the polyimide film formed on the semiconductor substrate due to a process trouble or the like. At this time, the polyimide film is generally about 400 ° C.
Since the annealing treatment before and after is performed, it is very difficult to remove by etching.
以下に従来の半導体装置上に被覆したポリイミド膜の
除去方法について説明する。第４図を使って、従来の半
導体装置上に被覆されたポリイミド膜の除去方法につい
て述べる。第３図ａはパイレックス製ビーカー１に、例
えばジメチルスルホオキシドール対モノエタノールアミ
ンの容量比６対４の混合液２を加えて、60℃一定温度に
加熱したものであり、パイレックス製ビーカー１に前記
半導体装置３を一定時間浸した後、第３図ｂのアセトン
４を加えたパイレックス製ビーカー１に前記半導体装置
３を移し、周波数45KHzで超音波洗浄をおこない、前記
半導体３上に被覆したポリイミド膜を除去する。Hereinafter, a conventional method for removing a polyimide film coated on a semiconductor device will be described. A conventional method for removing a polyimide film coated on a semiconductor device will be described with reference to FIG. FIG. 3a shows a Pyrex beaker 1 to which a mixed solution 2 of, for example, dimethyl sulfoxide / monoethanolamine having a volume ratio of 6: 4 is added and heated to a constant temperature of 60 ° C. After immersing the semiconductor device 3 for a certain period of time, the semiconductor device 3 was transferred to a Pyrex beaker 1 to which acetone 4 was added as shown in FIG. 3B, and subjected to ultrasonic cleaning at a frequency of 45 KHz, and a polyimide film coated on the semiconductor 3 Is removed.
発明が解決しようとする課題 しかしながら上記の従来の構成では、ポリイミド膜の
キュア温度が例えば400℃と高い場合、ポリイミド膜を
完全に除去できないという問題や低温でアニールした場
合でも、ポリイミド膜を除去するのに長時間を有すると
いう欠点を有していた。However, in the above-described conventional configuration, when the curing temperature of the polyimide film is as high as, for example, 400 ° C., the problem that the polyimide film cannot be completely removed or even when annealing is performed at a low temperature, the polyimide film is removed. Had the disadvantage of having a long time.
本発明は上記従来の問題点を解決するもので、ポリイ
ミド膜除去残りがなく、短時間に処理可能な半導体装置
上に被覆されたポリイミド膜の除去方法を提供すること
を目的とする。An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide a method of removing a polyimide film coated on a semiconductor device, which has no remaining polyimide film and can be processed in a short time.
課題を解決するための手段 この目的を達成するために本発明の半導体装置上に被
覆されたポリイミド膜の除去方法は、前記半導体装置を
酸化剤に浸す工程と有機溶剤に浸す工程とを備えてい
る。Means for Solving the Problems To achieve this object, a method for removing a polyimide film coated on a semiconductor device according to the present invention comprises a step of immersing the semiconductor device in an oxidizing agent and a step of immersing the semiconductor device in an organic solvent. I have.
作用 この構成によって酸化剤による酸化反応によりポリイ
ミド膜のイミド構造の結合を弱めるため、ポリイミド膜
が可溶性ポリイミド体に変化し、容易に有機溶剤に融解
することができる。Action Since the bonding of the imide structure of the polyimide film is weakened by the oxidizing reaction of the oxidizing agent by this configuration, the polyimide film changes into a soluble polyimide and can be easily dissolved in an organic solvent.
実施例 以下本発明の一実施例について図面を参照しながら詳
細に説明する。第１図に本発 の除去工程を、第２図に
ポリイミド膜の形式工程を示す。Embodiment Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 shows the removal process of the present invention, and FIG. 2 shows the process of forming a polyimide film.
まず、本発明の一実施例における半導体装置上に被覆
されたポリイミド膜の除去方法を第１図で詳細に説明す
る。まずパイレックス製ビーカー11に発煙硝酸12を加
え、例えば60℃に加熱し、一定温度に保つ（第１図
ａ）。次にパイレックス製ビーカー11に前記半導体装置
３を５分間浸す。次に抵抗値16MΩの脱イオン水にて、
リンスする（第１図ｂ）。次にジメチルスルホオキシド
ール対モノエタノールアミンの例えば容量比６対４の混
合液14を加えたパイレックス製ビーカー11に前記半導体
装置３を室温状態で５分間浸す。（第１図ｃ）。この
後、例えばアセトン15を加えたパイレックス製ビーカー
11に前記半導体装置３を浸し、周波数45KHzで超音波洗
浄をおこない、前記半導体装置上に被覆したポリイミド
膜を除去する（第１図ｄ）。次に、半導体装置上にポリ
イミド膜を成膜させる工程を第２図で詳細に説明する。
簡単のために半導体装置の電極取り出し部の断面図によ
り説明する。21は半導体基板、22はAl配線、23はパッシ
ベーション膜、24は電極取り出し孔で構成されている。
（まず大気中でポリイミド25を180℃,30分間加熱して、
デハイド化し、）前記パッシベーション膜23上にポリイ
ミドをスピンコート法により塗布し、前記ポリイミド５
をプリベークする工程（第２図ａ）と露光し、窒素雰囲
気中で現像し、ポストベークする工程（第２図ｂ）と完
全なイミド化のための約400℃のキュア工程を有する。
前記工程によりポリイミド膜の最終膜厚は約２μｍとな
る。First, a method of removing a polyimide film coated on a semiconductor device according to one embodiment of the present invention will be described in detail with reference to FIG. First, fuming nitric acid 12 is added to a Pyrex beaker 11 and heated to, for example, 60 ° C. to maintain a constant temperature (FIG. 1a). Next, the semiconductor device 3 is immersed in a Pyrex beaker 11 for 5 minutes. Next, in deionized water with a resistance value of 16 MΩ,
Rinse (FIG. 1b). Next, the semiconductor device 3 is immersed in a Pyrex beaker 11 to which a mixed solution 14 of dimethylsulfoxide to monoethanolamine, for example, at a volume ratio of 6: 4, is added at room temperature for 5 minutes. (FIG. 1c). After this, for example, Pyrex beaker with acetone 15
The semiconductor device 3 is immersed in 11 and subjected to ultrasonic cleaning at a frequency of 45 KHz to remove the polyimide film coated on the semiconductor device (FIG. 1d). Next, the step of forming a polyimide film on a semiconductor device will be described in detail with reference to FIG.
For simplicity, a description will be given with reference to a cross-sectional view of an electrode take-out portion of a semiconductor device. 21 is a semiconductor substrate, 22 is an Al wiring, 23 is a passivation film, and 24 is an electrode extraction hole.
(First, heat polyimide 25 in air at 180 ° C for 30 minutes,
Dehydration), a polyimide is applied on the passivation film 23 by a spin coating method,
(FIG. 2a), exposing, developing in a nitrogen atmosphere and post-baking (FIG. 2b), and curing at about 400 ° C. for complete imidization.
By the above process, the final film thickness of the polyimide film is about 2 μm.
以上述べた除去方法でポリイミドが除去されることを
化学式で説明する。The fact that the polyimide is removed by the above-described removal method will be described by a chemical formula.
不溶性ポリイミド（式１）が強い酸化剤である発煙硝
酸により、イミド基の結合が切れた可溶性ポリイミド
（式２）に変化し、ポリイミドの溶剤であるジメチルス
ルホオキシドールとモノエタノールアミンの混合液14に
室温状態でも容易に融解することができる。また超音波
洗浄により、半導体装置上に残っていたポリイミドとジ
メチルスルホオキシドール，モノエタノールアミンを完
全に除去することができる。 The insoluble polyimide (Formula 1) is converted into a soluble polyimide (Formula 2) in which the bond of the imide group is broken by fuming nitric acid, which is a strong oxidizing agent. It can be easily melted even at room temperature. In addition, by ultrasonic cleaning, polyimide, dimethylsulfoxide, and monoethanolamine remaining on the semiconductor device can be completely removed.
なお本実施例では、60℃の発煙硝酸12を用いたがこれ
は、Al配線の腐食を防ぐためと、適度な処理時間にする
ためであり、ポリイミド膜を除去するためだけであれば
温度は何度でも構わない。また処理時間はポリイミドの
膜厚に依存する。また酸化剤として発煙硝酸12を用いた
が、酸化剤であればその種類は問わず、同等の効果を示
す。In this example, fuming nitric acid 12 at 60 ° C. was used.This is to prevent corrosion of the Al wiring and to set a proper processing time. It doesn't matter as many times. The processing time depends on the thickness of the polyimide. In addition, although fuming nitric acid 12 was used as the oxidizing agent, the same effect is exhibited regardless of the type of oxidizing agent.
また、有機溶剤としてジメチルスルホオキシドールと
モノエタノールアミンの混合液を容量比6:4で用いた
が、これは適当な時間でポリイミド膜を除去するためで
あり、容量比を変えても、ポリイミド膜を融解する時間
が変わるのみで、同等の効果を示す。また、可溶性ポリ
イミド膜の溶剤としてジメチルスルホオキシドールとモ
ノエタノールアミンの混合液を用いたが、例えばエチレ
ジアミンを用いても同等の効果を示す。In addition, a mixed solution of dimethyl sulfoxide and monoethanolamine was used as an organic solvent at a volume ratio of 6: 4, in order to remove the polyimide film in an appropriate time. The same effect is exhibited only by changing the melting time. In addition, although a mixed solution of dimethyl sulfoxide and monoethanolamine was used as a solvent for the soluble polyimide film, the same effect can be obtained by using, for example, ethylenediamine.
発明の効果 以上のように本発明によれば、いかなるキュアにより
硬化したポリイミド膜をも容易に除去することが可能で
ある。Effects of the Invention As described above, according to the present invention, a polyimide film cured by any curing can be easily removed.
第１図は本発明の一実施例における半導体装置上に被覆
されたポリイミド膜の除去方法を示す工程順図、第２図
は本発明の一実施例における半導体装置の電極取り出し
部上に被覆されたポリイミド膜の製造方法を示す工程断
面図、第３図は従来の半導体装置上に被覆されたポリイ
ミド膜の除去方法を示す図である。 1,11……パイレックス製ビーカーー、2,14……モノエタ
ノールアミンとジメチルスルホオキシドールの混合液、
３……半導体装置、4,15……アセトン、12……発煙硝
酸、13……脱イオン水、21……半導体基板、22……Al配
線、23……パッシベーション膜、24……電極とり出し
孔、25……ポリイミド。FIG. 1 is a flow chart showing a method of removing a polyimide film coated on a semiconductor device according to an embodiment of the present invention, and FIG. FIG. 3 is a process sectional view showing a method of manufacturing a polyimide film, and FIG. 3 is a view showing a conventional method of removing a polyimide film coated on a semiconductor device. 1,11: Pyrex beaker, 2,14 ... mixture of monoethanolamine and dimethyl sulfoxide,
3 ... Semiconductor device, 4,15 ... Acetone, 12 ... Fuming nitric acid, 13 ... Deionized water, 21 ... Semiconductor substrate, 22 ... Al wiring, 23 ... Passivation film, 24 ... Electrode extraction Hole, 25 ... polyimide.
Claims (1)
導体装置を酸化剤に浸す工程と、前記半導体装置を洗浄
する工程と、前記半導体装置を第１の混合有機剤に浸す
工程と、前記半導体装置を第２の有機剤に浸し、かつ超
音波洗浄を行なうことを特徴とするポリイミド膜の除去
方法。A step of immersing the semiconductor device on which the heat-treated polyimide film is formed in an oxidizing agent; a step of cleaning the semiconductor device; a step of immersing the semiconductor device in a first mixed organic agent; A method for removing a polyimide film, comprising immersing the device in a second organic agent and performing ultrasonic cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2541890A JP2662554B2 (en) | 1990-02-05 | 1990-02-05 | Removal method of polyimide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2541890A JP2662554B2 (en) | 1990-02-05 | 1990-02-05 | Removal method of polyimide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03229417A JPH03229417A (en) | 1991-10-11 |
| JP2662554B2 true JP2662554B2 (en) | 1997-10-15 |
Family
ID=12165398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2541890A Expired - Fee Related JP2662554B2 (en) | 1990-02-05 | 1990-02-05 | Removal method of polyimide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2662554B2 (en) |
-
1990
- 1990-02-05 JP JP2541890A patent/JP2662554B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03229417A (en) | 1991-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |