JP2647982B2 - Optical memory - Google Patents

Optical memory

Info

Publication number
JP2647982B2
JP2647982B2 JP1318799A JP31879989A JP2647982B2 JP 2647982 B2 JP2647982 B2 JP 2647982B2 JP 1318799 A JP1318799 A JP 1318799A JP 31879989 A JP31879989 A JP 31879989A JP 2647982 B2 JP2647982 B2 JP 2647982B2
Authority
JP
Japan
Prior art keywords
index layer
transparent substrate
refractive index
layer
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1318799A
Other languages
Japanese (ja)
Other versions
JPH03183037A (en
Inventor
雅広 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1318799A priority Critical patent/JP2647982B2/en
Publication of JPH03183037A publication Critical patent/JPH03183037A/en
Application granted granted Critical
Publication of JP2647982B2 publication Critical patent/JP2647982B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は音響機器または情報機器などに用いられる光
記憶体に関する。
Description: TECHNICAL FIELD The present invention relates to an optical memory used for audio equipment or information equipment.

[従来の技術] 従来、光記憶体の一つであるコンパクトディスク(以
下、CDと略す。)の反射膜の材料としては、アルミニウ
ムや金が使用されている。しかし、近年、CDにコンピュ
ータデータを記録したCD−ROMが普及し、従来にも増し
て、高温・高湿下での保存性の高いものが望まれてい
る。
[Prior Art] Conventionally, aluminum or gold has been used as a material of a reflection film of a compact disk (hereinafter abbreviated as CD), which is one of optical storage media. However, in recent years, CD-ROMs in which computer data is recorded on CDs have become widespread, and there has been a demand for a CD-ROM having high storage stability under high temperature and high humidity.

[発明が解決しようとする課題] 従来の金あるいはアルミニウムの反射膜を使用した光
記憶体は、かかる過酷な環境下において、蒸着された反
射膜がアルミニウムの場合は腐食、また金の場合は下地
体から剥離し、信号読み取りの指標とされるエラーレー
トが増加し、上記したようなニーズに適応できないとい
う問題があった。またアルミニウムや金以外の反射膜材
料は、反射率が不足するため使用できない状態にあっ
た。
[Problems to be Solved by the Invention] Conventionally, an optical memory using a reflective film of gold or aluminum, under such a severe environment, causes corrosion when the deposited reflective film is aluminum, and an underlayer when the deposited reflective film is gold. There has been a problem that it has been separated from the body and the error rate, which is an index of signal reading, has increased, and it has been impossible to meet the above-mentioned needs. Reflective film materials other than aluminum and gold were in a state where they could not be used due to insufficient reflectance.

本発明は、以上述べたような従来の課題を解決するた
めになされたもので、耐候性、特に優れた耐食性と付着
性を有し、かつ高反射率の反射膜を具備する光記憶体を
提供することにある。
The present invention has been made in order to solve the conventional problems as described above, and has an optical memory having a weather resistance, particularly excellent corrosion resistance and adhesion, and having a reflective film having a high reflectance. To provide.

[課題を解決するための手段] 本発明は、透明基板と、該透明基板の記録ビット形成
面に被覆されるシリコン,ゲルマニウムのいずれかから
なる高屈折率層と、酸化珪素,ふっ化カルシウム,また
はふっ化マグネシウムのいずれかからなる低屈折率層
と、クロム,タンタル,または窒化チタンのいずれかか
らなる反射層とをこの順に備えてなることを特徴とする
光記憶体である。
[Means for Solving the Problems] The present invention provides a transparent substrate, a high refractive index layer made of any of silicon and germanium coated on a recording bit forming surface of the transparent substrate, silicon oxide, calcium fluoride, Alternatively, there is provided an optical memory element comprising a low refractive index layer made of any one of magnesium fluoride and a reflection layer made of any one of chromium, tantalum, and titanium nitride in this order.

本発明で用いられる高屈折率層はシリコン,ゲルマニ
ウムを使用することができる。
Silicon and germanium can be used for the high refractive index layer used in the present invention.

また本発明で用いられる低屈折層は酸化珪素,ふっ化
カルシウム,またはふっ化マグネシウムを使用すること
ができる。
The low refractive layer used in the present invention can use silicon oxide, calcium fluoride, or magnesium fluoride.

本発明で用いられる反射層はクロム,モリブデン,タ
ングステン,バナジウム,ニオブ,タンタル,チタン,
ジルコニウム,ハフニウム,マンガン,レニウム,ルテ
ニウム,鉄,オスミウム,コバルト,ロジウム,イリジ
ウム,ニッケル,パラジウム,白金,亜鉛,カドミウ
ム,錫,鉛,タリウム,アンチモン,ビスマス,インジ
ウム,ガリウムなどの金属またはそれらの合金または窒
化チタン,窒化ジルコニウム,窒化ハフニウムなどの金
属窒化物を使用することができる。また、金または銀の
単体を反射層として用いることは付着性の面で、さらに
銅,アルミニウムの場合は腐食性の点で望ましくないた
め、これらの金属を用いる場合には、前記反射層として
使われる金属との合金として使用することが望ましい。
The reflection layer used in the present invention is chromium, molybdenum, tungsten, vanadium, niobium, tantalum, titanium,
Metals such as zirconium, hafnium, manganese, rhenium, ruthenium, iron, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, zinc, cadmium, tin, lead, thallium, antimony, bismuth, indium, gallium and alloys thereof Alternatively, a metal nitride such as titanium nitride, zirconium nitride, or hafnium nitride can be used. The use of a single layer of gold or silver as the reflective layer is not desirable in terms of adhesion, and the use of copper or aluminum is undesirable in terms of corrosiveness. It is desirable to use it as an alloy with the metal to be used.

本発明で用いられる透明基板は、アクリル樹脂,ポリ
カーボネート樹脂,ポリオレフィン樹脂,エポキシ樹
脂,フッ素樹脂,ガラス,ゾルゲルガラスなどを用いる
ことができる。
As the transparent substrate used in the present invention, acrylic resin, polycarbonate resin, polyolefin resin, epoxy resin, fluororesin, glass, sol-gel glass, or the like can be used.

本発明の光記憶体は、射出成形あるいはスタンパから
の密着転写などにより記録ピットを形成した透明基板の
上に、高屈折率層および低屈折率層を交互にスパッタ
法、イオンプレーティング法、クラスターイオンビーム
法、プラズマCVD法あるいは蒸着法等により被覆し、さ
らに必要に応じて反射層を上記と同様に組み合わせ層上
に被覆して形成する。
The optical storage medium of the present invention is formed by alternately forming a high refractive index layer and a low refractive index layer on a transparent substrate on which recording pits are formed by injection molding or close transfer from a stamper, an ion plating method, a cluster method, or the like. It is formed by coating with an ion beam method, a plasma CVD method, a vapor deposition method, or the like, and further, if necessary, coating a reflective layer on the combination layer in the same manner as described above.

透明基板は、例えば、ガラス基板の上に珪酸重合物を
スピン塗布し、スタンパを密着させてピットを転写さ
せ、ピット付きの透明基板を形成する。またスタンパの
型の中に樹脂を射出し、型から取り出してピット付きの
透明基板を形成してもよい。
As the transparent substrate, for example, a silicate polymer is spin-coated on a glass substrate, and a pit is transferred by bringing a stamper into close contact with the glass substrate to form a pitted transparent substrate. Alternatively, a resin may be injected into the mold of the stamper and taken out of the mold to form a pitted transparent substrate.

このように作製した本発明の光記憶体は、高反射率と
高耐候性(高付着および高耐食性)を併せ持ち、従来の
金またはアルミニウム反射膜を直接透明基板に被覆した
ものよりはるかに優れた長期のデータ保存に関する信頼
性を有する。
The optical memory of the present invention thus produced has both high reflectance and high weather resistance (high adhesion and high corrosion resistance), and is far superior to the conventional one in which a gold or aluminum reflective film is directly coated on a transparent substrate. Reliable for long-term data storage.

[作用] 本発明の光記憶体は、透明基板上に高屈折率層と低屈
折率層よりなる組み合わせ層を形成する。この組み合わ
せ層によって、各層からの反射光が多重干渉を起こし、
この時、各層の膜厚を適切な値に選択すると位相が一致
し、反射率を100%近くにまで高めることができる。従
って、従来のように透明基板上に直接AlやAu等よりなる
反射膜を形成しなくともよく、信頼性の高い光記憶体が
提供される。
[Operation] In the optical storage medium of the present invention, a combination layer including a high refractive index layer and a low refractive index layer is formed on a transparent substrate. Due to this combination layer, reflected light from each layer causes multiple interference,
At this time, if the thickness of each layer is selected to an appropriate value, the phases match, and the reflectance can be increased to nearly 100%. Therefore, it is not necessary to form a reflective film made of Al, Au, or the like directly on the transparent substrate as in the related art, and a highly reliable optical memory is provided.

高屈折率層と低屈折率層の組み合わせ層のみでも反射
率を100%近くにすることができるが、多層の組み合わ
せが必要となる。そこで低屈折率層と高屈折率層の組み
合わせ層上に反射層を設けること、少ない組み合わせ層
数で高反射率を得ることができる。また高屈折率層と低
屈折率層の屈折率の差が大きいほど該2層の膜厚を薄く
することができ、ピットの形状(深さ,巾,長さ)を損
ねることが少ない。
The reflectance can be made close to 100% by using only the combination of the high refractive index layer and the low refractive index layer, but a combination of multiple layers is required. Thus, by providing a reflective layer on a combination layer of a low refractive index layer and a high refractive index layer, a high reflectance can be obtained with a small number of combined layers. In addition, as the difference between the refractive indices of the high refractive index layer and the low refractive index layer increases, the thickness of the two layers can be reduced, and the shape (depth, width, length) of the pits is hardly impaired.

[実施例] 以下に、図面を参照して本発明の実施例を詳細に説明
する。
Example An example of the present invention will be described below in detail with reference to the drawings.

第1図は光記憶体の比較例を示したもので、第1図
(a)はその部分断面図、第1図(b)は(a)におけ
るA部の拡大断面図である。ここで、透明基板1、高屈
折率層2、低屈折率層3がそれぞれ第1表のIおよびII
に示す材質,構成および膜厚で被覆された2個の試料を
作製した。
FIG. 1 shows a comparative example of an optical storage medium, wherein FIG. 1 (a) is a partial sectional view thereof, and FIG. 1 (b) is an enlarged sectional view of a portion A in FIG. 1 (a). Here, the transparent substrate 1, the high refractive index layer 2, and the low refractive index layer 3 correspond to I and II in Table 1, respectively.
Two samples coated with the materials, configurations, and film thicknesses shown in Table 1 were produced.

第2図は光記憶体の比較例を示したもので、第2図
(a)はその部分断面図、第2図(b)は(a)におけ
るB部の拡大断面図である。ここで、透明基板1、低屈
折率層3、高屈折率層2がそれぞれ第1表のIIIおよびI
Vに示す材質,構成および膜厚で被覆された2個の試料
を作製した。
2A and 2B show a comparative example of the optical storage body, wherein FIG. 2A is a partial cross-sectional view thereof, and FIG. 2B is an enlarged cross-sectional view of a portion B in FIG. Here, the transparent substrate 1, the low-refractive-index layer 3, and the high-refractive-index layer 2 correspond to III and I in Table 1, respectively.
Two samples covered with the material, configuration and film thickness shown in V were prepared.

第3図は本発明の光記憶体の一実施例を示す部分断面
図である。ここで、透明基板1、高屈折率層2、低屈折
率層3、反射層4がそれぞれ第1表のV,VI,VIIに示す材
質,構成および膜厚で被覆された3個の試料を作製し
た。
FIG. 3 is a partial cross-sectional view showing one embodiment of the optical storage body of the present invention. Here, three samples in which the transparent substrate 1, the high-refractive-index layer 2, the low-refractive-index layer 3, and the reflective layer 4 were coated with the materials, configurations, and film thicknesses shown in Tables V, VI, and VII, respectively, were used. Produced.

第4図は本発明を再生専用光記憶体に適用した一実施
例の部分断面図である。ここで1はゾルゲル法により記
録ピットを設けた強化ガラス基板、高屈折率層2、低屈
折率層3、反射層4がそれぞれ第1表のVIIIに示す材
料、構成および膜厚で被覆した1個の試料を作製した。
反射層4の上には試料を操作する際に反射層等に傷が発
生することを防止する意味でシリコン系の樹脂膜5が10
μm被覆されている。また、強化ガラスの基板面側には
ガラスの腐食を防止するための保護膜6として10%の酸
化ジルコニウムを含む酸化珪素を100nm被覆した。
FIG. 4 is a partial sectional view of an embodiment in which the present invention is applied to a read-only optical storage medium. Here, 1 is a tempered glass substrate provided with recording pits by a sol-gel method, a high refractive index layer 2, a low refractive index layer 3, and a reflective layer 4, each of which is coated with the material, configuration, and film thickness shown in VIII of Table 1. Samples were made.
A silicon-based resin film 5 is formed on the reflective layer 4 in order to prevent the reflective layer and the like from being damaged when the sample is operated.
μm coated. The substrate side of the tempered glass was coated with 100 nm of silicon oxide containing 10% zirconium oxide as a protective film 6 for preventing corrosion of the glass.

得られた各試料の反射率を併せて第1表に示す。 Table 1 shows the reflectances of the obtained samples.

次に、これらの試料とポリカーボネート樹脂からなる
透明基板の上にアルミニウムおよび金を反射膜として形
成した比較試料について、温度70℃、相対湿度95%の耐
候性試験を6ヶ月間行い、信号の良否の指標となるエラ
ー数を測定した。6ヶ月の耐候性試験後、本発明の試料
のエラー数は全く劣化がみられなかったが、アルミニウ
ム反射膜を用いた比較試料は腐食により、また金反射膜
を用いた比較試料は剥離によりエラーの測定が不能にな
るほど劣化した。
Next, these samples and a comparative sample in which aluminum and gold were formed as reflective films on a transparent substrate made of a polycarbonate resin were subjected to a weather resistance test at a temperature of 70 ° C. and a relative humidity of 95% for 6 months. The number of errors as an index of was measured. After the weather resistance test for 6 months, the number of errors of the sample of the present invention did not deteriorate at all, but the comparative sample using the aluminum reflective film was erroneous due to corrosion, and the comparative sample using the gold reflective film was erroneous due to peeling. Deteriorated to the point that measurement of the sample became impossible.

[発明の効果] 以上、詳細に述べたように、本発明の光記憶体は透明
基板との密着性に優れ、かつ耐食性および高反射率を有
しており、アルミニウムや金の反射膜を使用した光記憶
体に比べてはるかに信頼性を向上させることができる。
[Effects of the Invention] As described above in detail, the optical storage medium of the present invention has excellent adhesion to a transparent substrate, has corrosion resistance and high reflectance, and uses a reflection film of aluminum or gold. The reliability can be greatly improved as compared with the optical storage medium that is used.

【図面の簡単な説明】[Brief description of the drawings]

第1図から第2図はそれぞれ光記憶体の比較例の部分断
面図である。第3図から第4図はそれぞれ本発明の光記
憶体の一実施例の部分断面図である。 1……透明基板 2……高屈折率層、3……低屈折率層、4……反射層、
5……樹脂膜、6……保護膜
1 and 2 are partial cross-sectional views of a comparative example of the optical storage body. 3 and 4 are partial cross-sectional views of an embodiment of the optical storage medium of the present invention. 1 ... transparent substrate 2 ... high refractive index layer, 3 ... low refractive index layer, 4 ... reflective layer,
5: Resin film, 6: Protective film

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】透明基板と、該透明基板の記録ビット形成
面に被覆されるシリコン,ゲルマニウムのいずれかから
なる高屈折率層と、酸化珪素,ふっ化カルシウム,また
はふっ化マグネシウムのいずれかからなる低屈折率層
と、クロム,タンタル,または窒化チタンのいずれかか
らなる反射層とをこの順に備えてなることを特徴とする
光記憶体。
1. A transparent substrate, a high refractive index layer made of any one of silicon and germanium coated on a recording bit forming surface of the transparent substrate, and one of silicon oxide, calcium fluoride, and magnesium fluoride. An optical memory comprising: a low-refractive-index layer; and a reflective layer made of any one of chromium, tantalum, and titanium nitride in this order.
JP1318799A 1989-12-11 1989-12-11 Optical memory Expired - Fee Related JP2647982B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1318799A JP2647982B2 (en) 1989-12-11 1989-12-11 Optical memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1318799A JP2647982B2 (en) 1989-12-11 1989-12-11 Optical memory

Publications (2)

Publication Number Publication Date
JPH03183037A JPH03183037A (en) 1991-08-09
JP2647982B2 true JP2647982B2 (en) 1997-08-27

Family

ID=18103075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1318799A Expired - Fee Related JP2647982B2 (en) 1989-12-11 1989-12-11 Optical memory

Country Status (1)

Country Link
JP (1) JP2647982B2 (en)

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Publication number Priority date Publication date Assignee Title
JP2737664B2 (en) * 1994-09-30 1998-04-08 日本電気株式会社 Information recording medium
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
DK1472686T3 (en) * 2002-01-18 2006-10-16 Koninkl Philips Electronics Nv Optical data storage media for write once recording
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN106449684B (en) 2010-06-18 2019-09-27 西奥尼克斯公司 High speed photosensitive device and correlation technique
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods

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JP2639907B2 (en) * 1985-09-10 1997-08-13 三洋電機株式会社 Optical information recording disk
JPH067980B2 (en) * 1987-05-28 1994-02-02 東芝機械株式会社 Hot water supply / exhaust device in constant temperature surface heat insulation furnace
JPH0784993B2 (en) * 1987-12-03 1995-09-13 三菱電機株式会社 Fire control system for aircraft
JPH07109670B2 (en) * 1988-11-22 1995-11-22 セキノス株式会社 Method for coating multilayer film on optical disk substrate
JP2729317B2 (en) * 1989-06-10 1998-03-18 日本ゼオン株式会社 optical disk

Also Published As

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JPH03183037A (en) 1991-08-09

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