JP2576763B2 - Ferromagnetic magnetoresistive element - Google Patents
Ferromagnetic magnetoresistive elementInfo
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- JP2576763B2 JP2576763B2 JP5170225A JP17022593A JP2576763B2 JP 2576763 B2 JP2576763 B2 JP 2576763B2 JP 5170225 A JP5170225 A JP 5170225A JP 17022593 A JP17022593 A JP 17022593A JP 2576763 B2 JP2576763 B2 JP 2576763B2
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- Prior art keywords
- magnetoresistive element
- ferromagnetic
- magnetic field
- magnetoresistive
- ferromagnetic magnetoresistive
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、強磁性磁気抵抗素子に
係わり、たとえば、回転検出や、位置検出に用いられる
強磁性磁気抵抗素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferromagnetic magnetoresistive element, for example, to a ferromagnetic magnetoresistive element used for rotation detection and position detection.
【０００２】[0002]
【従来の技術】強磁性磁気抵抗素子は、強磁性金属の電
気抵抗が外部磁界によって変化する現象（磁気抵抗効
果）を利用して、磁界の強度を検出する素子である。強
磁性磁気抵抗体の抵抗は、磁化の大きさに依存するの
で、外部磁界変化に対する抵抗変化は、磁化曲線に対応
した飽和特性を示す。このため、ある強度以上の磁界の
検出には用いることができず、通常、１００Ｏｅ（エル
ステッド）程度までの磁界の測定か、磁界の変化を測定
することにより、被検出対象の回転角や位置を検出する
センサとして用いられる。2. Description of the Related Art A ferromagnetic magnetoresistive element is an element for detecting the intensity of a magnetic field by utilizing a phenomenon in which the electric resistance of a ferromagnetic metal is changed by an external magnetic field (magnetoresistive effect). Since the resistance of a ferromagnetic magnetoresistive depends on the magnitude of magnetization, a change in resistance with respect to a change in an external magnetic field shows a saturation characteristic corresponding to a magnetization curve. For this reason, it cannot be used for detecting a magnetic field having a certain strength or more. Usually, the rotation angle and position of the detection target are measured by measuring the magnetic field up to about 100 Oe (Oersted) or measuring the change in the magnetic field. Used as a sensor to detect.
【０００３】図４を用いて、強磁性磁気抵抗素子で磁界
の方向を検出する場合の動作原理を簡単に説明する。こ
の図は、磁気抵抗要素を２つ組み合せた素子の電気的接
続を簡略化して示したものである。強磁性磁気抵抗素子
１１は、２つの磁気抵抗要素１２A と１２B で構成され
る。磁気抵抗要素１２A と１２B は、磁化されていない
状態で同一の抵抗を有する薄膜状の強磁性体であり、そ
れらは互いに直交して配置され、直列に接続される。こ
れらの磁気抵抗要素には、定電圧電源１５から一定の電
圧Ｖ0 が供給される。Referring to FIG. 4, the operation principle of detecting the direction of a magnetic field with a ferromagnetic magnetoresistive element will be briefly described. This diagram shows a simplified electrical connection of an element in which two magnetoresistive elements are combined. Ferromagnetic magnetoresistive element 11 is composed of two magnetoresistive elements 12 A and 12 B. Magnetoresistive elements 12 A and 12 B is a thin-film ferromagnetic material having the same resistance in a state of not being magnetized, they are arranged perpendicular to each other, they are connected in series. A constant voltage V 0 is supplied from the constant voltage power supply 15 to these magnetoresistive elements.
【０００４】ここで、強磁性磁気抵抗素子１１が、一定
強度の外部磁界１３下におかれた場合を考えると、各磁
気抵抗要素１２A 、１２B の抵抗ＲA 、ＲB と電極１４
1 で測定される電圧Ｖは、次式で外部磁界の回転角θと
関係づけられる。[0004] Here, the ferromagnetic magnetoresistive element 11, considering a case placed under the external magnetic field 13 of constant intensity, the magneto-resistive element 12 A, 12 B of the resistor R A, R B and the electrode 14
The voltage V measured at 1 is related to the rotation angle θ of the external magnetic field by the following equation.
【０００５】[0005]
【数１】 (Equation 1)
【０００６】ここで、θは、磁気抵抗要素１２A の電流
方向と磁界のなす角であり、Ｒ1 は、θ＝π／２のとき
の磁気抵抗要素１２A 、１２B の抵抗、Ｒ2 は、θ＝０
のときの抵抗である。（３）式の右辺、第２項が外部磁
界の角度の変化による電圧変化である。このように、θ
に応じて電圧Ｖが変化するため、電圧Ｖから、磁界の方
向が検出できる。Here, θ is the angle between the current direction of the magnetoresistive element 12 A and the magnetic field, and R 1 is the resistance of the magnetoresistive elements 12 A and 12 B when θ = π / 2, R 2 Is θ = 0
Is the resistance when The second term on the right side of the equation (3) is a voltage change due to a change in the angle of the external magnetic field. Thus, θ
Therefore, the direction of the magnetic field can be detected from the voltage V.
【０００７】原理上は、１つの磁気抵抗要素から磁界の
方向を検出することができるにも関わらず、図４のよう
に、磁気抵抗要素を組み合わせて強磁性磁気抵抗素子を
構成するのは、以下の理由による。まず、（１）、
（２）式が成立するため、２つの磁気抵抗要素の抵抗の
和、ＲA ＋ＲB が、磁界の回転角に依存せず一定値、Ｒ
1＋Ｒ2 になる。このため、定電圧電源１５の負荷抵抗
が常に一定値であることになり、簡単な回路で定電圧を
供給することができるようになる。また、（３）式から
明らかなように、抵抗の比を測定することになり、温度
変化による抵抗変化の影響をキャンセルすることができ
る。このため、従来の強磁性磁気抵抗素子は、２つの磁
気抵抗要素を同一平面上に形成することにより作製され
ていた。Although the direction of the magnetic field can be detected from one magnetoresistive element in principle, as shown in FIG. 4, the combination of the magnetoresistive elements to form a ferromagnetic magnetoresistive element is as follows. For the following reasons. First, (1),
Since the equation (2) holds, the sum of the resistances of the two magnetoresistive elements, R A + R B, is a constant value independent of the rotation angle of the magnetic field.
It becomes 1 + R 2. For this reason, the load resistance of the constant voltage power supply 15 is always a constant value, and the constant voltage can be supplied with a simple circuit. Further, as is apparent from the equation (3), the resistance ratio is measured, and the influence of the resistance change due to the temperature change can be canceled. For this reason, the conventional ferromagnetic magnetoresistive element has been manufactured by forming two magnetoresistive elements on the same plane.
【０００８】図５に、実際の強磁性磁気抵抗素子の外観
を示す。強磁性磁気抵抗素子１１は、２つの磁気抵抗要
素１２A と１２B が、互いにその電流方向が直交するよ
うな形で、たとえばシリコン（Ｓｉ）のような非磁性絶
縁基板１６上に形成される。図４では、磁気抵抗要素を
直線で示したが、実際には、この図のように、折れ線状
に形成される。これは、磁気抵抗要素の抵抗値を、使用
に適当な値にするためである。FIG. 5 shows the appearance of an actual ferromagnetic magnetoresistive element. The ferromagnetic magnetoresistive element 11 is formed on a nonmagnetic insulating substrate 16 made of, for example, silicon (Si) so that two magnetoresistive elements 12 A and 12 B have their current directions orthogonal to each other. . In FIG. 4, the magnetoresistive element is shown by a straight line, but is actually formed in a polygonal line shape as shown in FIG. This is to make the resistance value of the magnetoresistive element suitable for use.
【０００９】図６に、強磁性磁気抵抗素子の他の構成例
を示す。この強磁性磁気抵抗素子１１では、４つの磁気
抵抗要素１２1 〜１２4 が設けられている。この強磁性
磁気抵抗素子１１では、電圧は、電極１４2 と１４3 の
間に印加され、電極１４1 または電極１４4 における電
圧を測定することにより、磁界の変化の検出が行われ
る。なお、この素子では、これら２つの電極から、位相
が１８０度異なる２つの検出信号を得ることができる。FIG. 6 shows another configuration example of the ferromagnetic magnetoresistive element. In the ferromagnetic magnetoresistive element 11, four magnetic resistance elements 12 1 to 12 4 are provided. In the ferromagnetic magnetoresistive element 11, a voltage is applied between the electrodes 14 2 and 14 3, by measuring the voltage at the electrode 14 1 and the electrodes 14 4, the detection of change in the magnetic field takes place. In addition, in this element, two detection signals whose phases are different by 180 degrees can be obtained from these two electrodes.
【００１０】[0010]
【発明が解決しようとする課題】前述の動作説明におい
ては、外部磁界が一様な強度を有するものとして説明を
行ったが、強磁性磁気抵抗素子が、一様な磁界の測定に
用いられることはないといってよい。たとえば、回転角
の検出では、被検出対象の周囲に異なる極性の磁力源を
交互に配置して、その回転に伴う磁界変化を、側方から
検出する。この場合には、その被検出対象である回転体
から離れた位置の磁界は弱くなるため、一つの磁気抵抗
要素内で、磁界の強度分布に応じた抵抗率分布が生じて
しまう。このような抵抗率分布が発生すると、磁気抵抗
要素の抵抗と磁界の方向との関係が複雑になり、測定さ
れた電圧から磁界の方向を算出することが困難になる。
この問題を解決するためには、磁気抵抗要素が形成され
ている部分、すなわち、感磁部の面積をできるがぎり小
さくすることが必要となる。In the above description of the operation, the description has been made assuming that the external magnetic field has a uniform intensity. However, a ferromagnetic magnetoresistive element is used for measuring a uniform magnetic field. There is no such thing. For example, in detecting a rotation angle, magnetic force sources having different polarities are alternately arranged around the detection target, and a magnetic field change accompanying the rotation is detected from the side. In this case, the magnetic field at a position distant from the rotating body to be detected is weakened, so that a resistivity distribution corresponding to the intensity distribution of the magnetic field occurs in one magnetoresistive element. When such a resistivity distribution occurs, the relationship between the resistance of the magnetoresistive element and the direction of the magnetic field becomes complicated, and it becomes difficult to calculate the direction of the magnetic field from the measured voltage.
In order to solve this problem, it is necessary to make the area where the magnetoresistive element is formed, that is, the area of the magnetic sensing part as small as possible.
【００１１】しかし、従来の強磁性磁気抵抗素子では、
同一平面上に２つ以上の磁気抵抗要素を形成していたた
め、感磁部の面積が、１つの磁気抵抗要素の少なくとも
２倍の面積を必要とするといった問題があった。また、
前述のように２つの磁気抵抗要素の抵抗は等しいことが
望まれるため、従来のような、磁気抵抗要素がパターニ
ングにより一括して作製される強磁性磁気抵抗素子で
は、作製時に膜厚分布が生じないように正確に成膜プロ
セスを制御することが必要であった。However, in the conventional ferromagnetic magnetoresistive element,
Since two or more magnetoresistive elements are formed on the same plane, there is a problem that the area of the magnetic sensing part needs to be at least twice as large as that of one magnetoresistive element. Also,
As described above, since it is desired that the resistances of the two magnetoresistive elements are equal, in a conventional ferromagnetic magnetoresistive element in which the magnetoresistive elements are collectively manufactured by patterning, a film thickness distribution occurs at the time of manufacture. It was necessary to control the film formation process accurately so as not to cause any problems.
【００１２】そこで本発明の目的は、感磁部の面積が小
さい強磁性磁気抵抗素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a ferromagnetic magnetoresistive element having a small magnetic sensing area.
【００１３】また、本発明の他の目的は、作製マージン
の大きな強磁性磁気抵抗素子を提供することにある。Another object of the present invention is to provide a ferromagnetic magnetoresistive element having a large manufacturing margin.
【００１４】[0014]
【００１５】[0015]
【課題を解決するための手段】請求項１記載の発明で
は、磁気抵抗効果を有する強磁性体薄膜からなる磁気抵
抗要素が、１つの基板上で電流方向を直交させるように
２つの方向にそれぞれ形成されており、これら同一構成
の２つの基板の一方の磁気抵抗要素が他方の基板の他方
の磁気抵抗要素と同一方向を向くように両基板を９０度
回転させた状態で重ね合わされ、それぞれの基板の磁気
構成要素が電気的に接続した強磁性磁気抵抗素子である
ことを特徴としている。 The [Summary of invention of claim 1, wherein, as the magnetoresistive element comprising a ferromagnetic thin film having a magnetoresistive effect, thereby perpendicular to the current direction on one substrate with
They are formed in two directions, respectively.
Of one of the two substrates is the other of the other substrate
90 ° so that both substrates are oriented in the same direction as the magnetoresistive element
It is superposed in a rotating state, and the magnetic
Components are ferromagnetic magnetoresistive elements that are electrically connected
It is characterized by:
【００１６】すなわち請求項１記載の発明では、磁気抵
抗要素が互いに直交するような方向に配置された同一構
成の基板を２つ用意し、これらの基板の一方の磁気抵抗
要素が他方の基板の他方の磁気構成要素と同一方向を向
くように配置して、これら基板間の接続を行っている。
このように２枚の基板には２通りの磁気抵抗要素が配置
されているので、抵抗値が近いもの同士の磁気抵抗要素
を選んで電気的な接続を行うことで、良好な強磁性磁気
抵抗素子を簡単にかつ安価に作製することができる。 That is , in the first aspect of the present invention, the magnetic resistor is provided.
The same structure in which the resistance elements are arranged in directions orthogonal to each other
Two substrates are prepared, and the magnetoresistance of one of these substrates
Element is oriented in the same direction as the other magnetic component on the other substrate
And the connection between these substrates is made.
Thus, two types of magnetoresistive elements are arranged on two substrates.
Because it is, the magnetoresistive element between one resistance value is close
, And making an electrical connection, a good ferromagnetic magnetoresistive element can be easily and inexpensively manufactured .
【００１７】[0017]
【実施例】以下、実施例につき本発明を詳細に説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments.
【００１８】図１に、実施例による強磁性磁気抵抗素子
の概要を示す。強磁性磁気抵抗素子は、所定の形状の強
磁性薄膜からなる磁気抵抗要素１２A と１２B が形成さ
れた２枚の非磁性絶縁体基板１６A と１６B を、互いに
直交するように配置したものである。磁気抵抗要素１２
A と１２B は、パーマロイで形成された薄膜パターンで
あり、これらは、同一プロセスにより、同一形状のシリ
コン基板１６上に形成したものである。なお、図中の符
号は、図４に示した動作説明図に対応させてあり、電極
１４2 と電極１４3 との間に定電圧が印加され、電極１
４2 と電極１４ 1 の間の電圧が外部磁界の検出に用いら
れる。FIG. 1 shows a ferromagnetic magnetoresistive element according to an embodiment.
The outline of is shown. A ferromagnetic magnetoresistive element has a predetermined shape.
Magnetoresistive element 12 made of a magnetic thin filmAAnd 12BFormed
Two non-magnetic insulator substrates 16AAnd 16BTo each other
They are arranged so as to be orthogonal. Magnetoresistive element 12
AAnd 12BIs a thin film pattern made of permalloy
Yes, these are the same process
It is formed on a circuit board 16. Note that the symbols in the figure
The symbols correspond to the operation explanatory diagrams shown in FIG.
14TwoAnd electrode 14ThreeAnd a constant voltage is applied between
4TwoAnd electrode 14 1Voltage is used to detect the external magnetic field.
It is.
【００１９】この強磁性磁気抵抗素子の特性評価は、素
子をケースに組み込み、実際のセンサ形状にしてから行
った。The evaluation of the characteristics of the ferromagnetic magnetoresistive element was performed after the element was assembled in a case and made into an actual sensor shape.
【００２０】図２に、この強磁性磁気抵抗素子を用いた
センサの概要を示す。強磁性磁気抵抗素子を構成する２
つの磁気抵抗要素が形成された基板１６A と１６B は、
リードフレーム２１上に、積み重ねられ、接着剤により
接続される。リード端子２２と強磁性磁気抵抗素子の電
極の接続は、リード線２３により行われる。このとき、
基板１６A 上の電極１４1 と、基板１６B 上の電極１４
2 の電気的接続も合わせて行う。このようにリード端子
２２と接続された素子を、エポキシ材等のモールド樹脂
からなるケース２４にて封止して、センサを得た。FIG. 2 shows an outline of a sensor using the ferromagnetic magnetoresistive element. Constituting a ferromagnetic magnetoresistive element 2
Substrates 16 A and 16 B on which one magnetoresistive element is formed
On the lead frame 21, they are stacked and connected by an adhesive. The connection between the lead terminal 22 and the electrode of the ferromagnetic magnetoresistive element is made by a lead wire 23. At this time,
An electrode 14 1 of the substrate 16 A, the electrodes 14 on the substrate 16 B
The electrical connection of 2 is also performed. The element thus connected to the lead terminal 22 was sealed in a case 24 made of a mold resin such as an epoxy material to obtain a sensor.
【００２１】実施例の強磁性磁気抵抗素子は、図１およ
び図５から明らかなように、従来例の素子に比べて小さ
いため、ケースも小さくすることができた。また、実施
例と従来例の強磁性磁気抵抗素子を用いて作製したセン
サにより、実際に、周囲に磁力源を配置した回転体の回
転角の測定を行ったところ、実施例の強磁性磁気抵抗素
子では、従来例のそれにくらべ、被検出対象である回転
体からの距離マージンが大きいことが確認できた。As is apparent from FIGS. 1 and 5, the ferromagnetic magnetoresistive element of the embodiment is smaller than the element of the conventional example, so that the case can be made smaller. In addition, the rotation angle of a rotating body around which a magnetic force source was arranged was actually measured by the sensors manufactured using the ferromagnetic magnetoresistive elements of the embodiment and the conventional example. It was confirmed that the element had a larger distance margin from the rotating body to be detected than the conventional example.
【００２２】また、図１に示した強磁性磁気抵抗素子で
は、１つの基板上に１つの磁気抵抗要素を形成したが、
図３に示すように、各基板にそれぞれ２つの磁気抵抗要
素を形成してもよい。この図の強磁性磁気抵抗素子は、
図６に示した構成の素子を、本発明により実現したもの
であり、対応する部分には、図６と同一の符号を付けて
ある。このように、４つ以上の磁気抵抗要素で構成され
る強磁性磁気抵抗素子にも、本発明は、適用可能であ
る。この強磁性磁気抵抗素子も、感磁部が小さくなるた
め、従来の強磁性磁気抵抗素子より、磁界の変化を正確
に検出することができる。In the ferromagnetic magnetoresistive element shown in FIG. 1, one magnetoresistive element is formed on one substrate.
As shown in FIG. 3, two magnetoresistive elements may be formed on each substrate. The ferromagnetic magnetoresistive element in this figure is:
The element having the configuration shown in FIG. 6 is realized by the present invention, and the corresponding portions are denoted by the same reference numerals as in FIG. As described above, the present invention is applicable to a ferromagnetic magnetoresistive element including four or more magnetoresistive elements. Since this ferromagnetic magnetoresistive element also has a small magnetic sensing portion, a change in magnetic field can be detected more accurately than a conventional ferromagnetic magnetoresistive element.
【００２３】実施例の強磁性磁気抵抗素子では、２枚の
基板間の電極の接続をリード線を用いて行っているが、
基板にスルーホールを設けて、これにより、電気的接続
を行うようにすることもできる。また、実施例では、強
磁性金属として、パーマロイを用いてたが、ＣｏＮｉ
（コバルトニッケル）合金等の他の磁気抵抗効果を有す
る金属を用いてもよいことは当然である。In the ferromagnetic magnetoresistive element of the embodiment, the electrodes are connected between the two substrates by using lead wires.
It is also possible to provide a through hole in the substrate, thereby making an electrical connection. In the embodiment, permalloy is used as the ferromagnetic metal.
Naturally, other metals having a magnetoresistive effect such as a (cobalt nickel) alloy may be used.
【００２４】[0024]
【発明の効果】以上説明したように、本発明によれば、
それぞれの基板の磁気抵抗要素の配置構造が同一となっ
ているので、２つの基板の配置構造がそれぞれ異なる場
合と較べて強磁性磁気抵抗素子を安価に製造することが
できる。また、２つの基板の磁気抵抗要素の中から抵抗
値が近いもの同士の磁気抵抗要素を選んで電気的な接続
を行うことが可能なので、抵抗値が近いもの同士の磁気
抵抗要素を選んで電気的な接続を行うことが可能にな
り、歩留りおよび品質の良好な強磁性磁気抵抗素子を簡
単かつ安価に作製することができる。 As described above, according to the present invention,
The arrangement of the magnetoresistive elements on each substrate is the same
The two substrates have different layout structures.
Inexpensive manufacturing of ferromagnetic magnetoresistive elements
it can. Also, the resistance is selected from the magnetoresistive elements of the two substrates.
Electrical connection by selecting magnetoresistive elements with similar values
It is possible to perform magnetic
It is now possible to make an electrical connection by selecting a resistance element.
Ferromagnetic magnetoresistive element with good yield and quality
It can be manufactured simply and inexpensively.
【００２５】[0025]
【図１】本発明の実施例による強磁性磁気抵抗素子の概
要を示す構成図である。FIG. 1 is a configuration diagram showing an outline of a ferromagnetic magnetoresistive element according to an embodiment of the present invention.
【図２】実施例の強磁性磁気抵抗素子を組み込んだセン
サの概要を示す説明図である。FIG. 2 is an explanatory diagram showing an outline of a sensor incorporating the ferromagnetic magnetoresistive element of the embodiment.
【図３】実施例による４つの磁気抵抗要素を有する強磁
性磁気抵抗素子の概要を示す構成図である。FIG. 3 is a configuration diagram showing an outline of a ferromagnetic magnetoresistive element having four magnetoresistive elements according to an embodiment.
【図４】従来例の強磁性磁気抵抗素子の動作原理を示す
ための説明図である。FIG. 4 is an explanatory diagram showing the operation principle of a conventional ferromagnetic magnetoresistive element.
【図５】従来例による２つの磁気抵抗要素を用いた強磁
性磁気抵抗素子の概要を示す構成図である。FIG. 5 is a configuration diagram showing an outline of a conventional ferromagnetic magnetoresistive element using two magnetoresistive elements.
【図６】従来例による４つの磁気抵抗要素を用いた強磁
性磁気抵抗素子の概要を示す構成図である。FIG. 6 is a configuration diagram showing an outline of a conventional ferromagnetic magnetoresistive element using four magnetoresistive elements.
１１…強磁性磁気抵抗素子 １２…磁気抵抗要素 １３…磁界 １４…電極 １５…電源 １６…基板 ２１…リードフレーム ２２…リード端子 ２３…リード線 ２４…ケース DESCRIPTION OF SYMBOLS 11 ... Ferromagnetic resistance element 12 ... Magnetic resistance element 13 ... Magnetic field 14 ... Electrode 15 ... Power supply 16 ... Substrate 21 ... Lead frame 22 ... Lead terminal 23 ... Lead wire 24 ... Case
Claims (1)
なる磁気抵抗要素が、１つの基板上で電流方向を直交さ
せるように２つの方向にそれぞれ形成されており、これ
ら同一構成の２つの基板の一方の磁気抵抗要素が他方の
基板の他方の磁気抵抗要素と同一方向を向くように両基
板を９０度回転させた状態で重ね合わされ、それぞれの
基板の磁気構成要素を電気的に接続したことを特徴とす
る強磁性磁気抵抗素子。A magnetoresistive element made of a ferromagnetic thin film having a magnetoresistive effect makes a current direction orthogonal on one substrate.
Are formed in two directions so that
From one of the two substrates having the same configuration
Both bases must be oriented in the same direction as the other magnetoresistive element on the substrate.
The boards are superposed with the board rotated 90 degrees, and each
The magnetic components of the substrate are electrically connected.
That ferromagnetic magneto-resistive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5170225A JP2576763B2 (en) | 1993-07-09 | 1993-07-09 | Ferromagnetic magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5170225A JP2576763B2 (en) | 1993-07-09 | 1993-07-09 | Ferromagnetic magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0730170A JPH0730170A (en) | 1995-01-31 |
| JP2576763B2 true JP2576763B2 (en) | 1997-01-29 |
Family
ID=15900993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5170225A Expired - Lifetime JP2576763B2 (en) | 1993-07-09 | 1993-07-09 | Ferromagnetic magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2576763B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4543350B2 (en) * | 1999-12-03 | 2010-09-15 | 日立金属株式会社 | Rotation angle sensor and rotation angle sensor unit |
| JP2006086439A (en) * | 2004-09-17 | 2006-03-30 | Nidec Sankyo Corp | Magnetoresistive element |
| JP5663304B2 (en) * | 2007-06-27 | 2015-02-04 | ブルックス オートメーション インコーポレイテッド | Multi-dimensional position sensor |
| JP2009052963A (en) * | 2007-08-24 | 2009-03-12 | Denso Corp | Magnetic vector distribution measuring probe |
| JP2017026312A (en) * | 2013-12-02 | 2017-02-02 | コニカミノルタ株式会社 | Three-dimensional magnetic sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5750863A (en) * | 1980-09-09 | 1982-03-25 | Koichi Ogawa | Non-caloric food |
-
1993
- 1993-07-09 JP JP5170225A patent/JP2576763B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0730170A (en) | 1995-01-31 |
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