JP2555093B2 - Wafer fixing device - Google Patents
Wafer fixing deviceInfo
- Publication number
- JP2555093B2 JP2555093B2 JP62229584A JP22958487A JP2555093B2 JP 2555093 B2 JP2555093 B2 JP 2555093B2 JP 62229584 A JP62229584 A JP 62229584A JP 22958487 A JP22958487 A JP 22958487A JP 2555093 B2 JP2555093 B2 JP 2555093B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- fixing device
- fixing
- material sheet
- graphite material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔発明の属する技術分野〕 本発明はウエハの固定装置に係り、特に、イオンビー
ム加工装置に好適なウエハの固定装置に関する。Description: TECHNICAL FIELD The present invention relates to a wafer fixing device, and more particularly to a wafer fixing device suitable for an ion beam processing apparatus.
従来のウエハの固定装置は、特開昭51−111074号公報
に記載されているように、ウエハと試料台との間にシリ
コーン油やロータリーポンプ油等を介在し、これら低蒸
気圧の油膜をヒートシンクとして使用していた。A conventional wafer fixing device, as described in Japanese Patent Application Laid-Open No. 51-111074, interposes silicone oil, rotary pump oil, or the like between a wafer and a sample table, and forms an oil film of these low vapor pressures. It was used as a heat sink.
上記従来技術は、シリコーン油やロータリーポンプ油
等の低蒸気圧の油膜をヒートシンクとして使用していた
ため、ウエハにゴミが付着しやすいことや塗布法の個人
差によりウエハの汚染や冷却効果のばらつき、真空チャ
ンバ内の汚染について考慮がなされておらず、製品の信
頼性の低下やスループット低下などの問題があった。In the above-mentioned conventional technology, since a low vapor pressure oil film such as silicone oil or rotary pump oil is used as a heat sink, dust is likely to adhere to the wafer and variations in wafer contamination and cooling effect due to individual differences in coating method, Contamination in the vacuum chamber is not taken into consideration, and there are problems such as reduced product reliability and reduced throughput.
本発明は上述の点に鑑みなされたもので、その目的と
するところは、ウエハの汚染や冷却効果のばらつき、更
には真空チャンバ内の汚染をなくし、製品の信頼性は勿
論、スループットが向上するウエハの固定装置を提供す
るにある。The present invention has been made in view of the above points, and an object of the present invention is to eliminate the contamination of the wafer, the variation of the cooling effect, the contamination in the vacuum chamber, and the improvement of the throughput as well as the reliability of the product. A wafer fixing device is provided.
〔課題を解決するための手段〕 本発明は上記目的を達成するために、ウエハと試料台
との間に、可撓性の黒鉛材シートを介在し、該黒鉛材シ
ートは放射状に細孔があけられ、この放射状の細孔に対
向した試料台部に細溝が設けられていることを特徴とす
る。[Means for Solving the Problems] In order to achieve the above object, the present invention has a flexible graphite material sheet interposed between a wafer and a sample table, and the graphite material sheet has radial pores. A thin groove is provided in the sample base portion which is opened and faces the radial pores.
上記構成とすることにより、放射状に細孔があけられ
ている可撓性の黒鉛材シートをヒートシンク材として使
用しているため、ウエハとの密着性が良好に保たれ、従
来の湿式のシリコーン油やロータリーポンプ油等と冷却
効果は同一となり、かつ、乾式であるためのウエハの汚
染はなくなるし、取付時間がかからないためスループッ
トの向上が図れ、しかも真空チャンバ内の汚染もなくな
る。With the above-mentioned configuration, since the flexible graphite sheet having the pores radially opened is used as the heat sink material, the adhesion with the wafer is kept good, and the conventional wet silicone oil is used. The same cooling effect as that of rotary pump oil and the like, and since it is a dry type, the contamination of the wafer is eliminated, and since the mounting time is reduced, throughput can be improved, and contamination in the vacuum chamber is eliminated.
以下、本発明の一実施例を第１図、及び第２図に基づ
いて説明する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
該図に示すごとく、本実施例ではウエハ１と、これを
載置する試料台２との間にヒートシンク材である可撓性
のある黒鉛材シート５を介在し、ウエハ１の端部上面よ
り固定金具３を使用して試料台２に密着固定している。
４は、例えば固定金具３を試料台２に固定するための固
定金具ボルトであり、これは板バネを使用したものでも
よい。この状態にして、ウエハ１にイオンビームを照射
してイオンビーム加工する場合、試料台２には冷却水が
充満するジャケットを設け、かつ、これらに冷却水を供
給、排出する供・排出口を設けて冷却する。また、ウエ
ハ１を単にヒートシンク材である可撓性のある黒鉛材シ
ート５を介在し、固定金具等で機械的に固定する以外
に、更にヒートシンク材である可撓性のある黒鉛材シー
ト５の密着性を増すため真空排気口を設け、ウエハ１を
固定する前に真空引きを実施すれば、更に冷却効果は高
められる。As shown in the figure, in this embodiment, a flexible graphite material sheet 5 which is a heat sink material is interposed between the wafer 1 and the sample table 2 on which the wafer 1 is placed, and the upper surface of the end portion of the wafer 1 It is tightly fixed to the sample table 2 using the fixing metal fitting 3.
Reference numeral 4 denotes a fixing bracket bolt for fixing the fixing bracket 3 to the sample table 2, which may be a plate spring. In this state, when the wafer 1 is irradiated with an ion beam for ion beam processing, the sample table 2 is provided with a jacket filled with cooling water, and a supply / discharge port for supplying / discharging the cooling water to / from these is provided. Provide and cool. Further, in addition to mechanically fixing the wafer 1 with a flexible graphite material sheet 5 which is a heat sink material and using fixing hardware or the like, a flexible graphite material sheet 5 which is a heat sink material If a vacuum exhaust port is provided to increase the adhesiveness and a vacuum is drawn before fixing the wafer 1, the cooling effect can be further enhanced.
第３図に可撓性の黒鉛材シート５の真空引きできる構
造を示す。即ち、、黒鉛材シート５に放射状に細孔６を
あけておき、この下面に設置する試料台部に、放射状の
細孔６に対向した細溝をあけておけば真空引きは可能と
なる。FIG. 3 shows a structure in which the flexible graphite sheet 5 can be evacuated. That is, if pores 6 are radially formed in the graphite material sheet 5 and a thin groove facing the radial pores 6 is formed in the sample table portion installed on the lower surface of the graphite sheet 5, vacuuming can be performed.
また、このようにヒートシンク材に可撓性の黒鉛材シ
ート５を用いたときのウエハ面の温度を測定した結果を
第４図に示す。FIG. 4 shows the result of measuring the temperature of the wafer surface when the flexible graphite sheet 5 is used as the heat sink material.
該図は縦軸にウエハ温度（℃）、横軸に入熱量（w/cm
2）をとり、厚み（ｔ）１のSiウエハに厚み（ｔ）が0.4
の可撓性黒鉛材シートを使用した際のウエハ面の温度を
示すものである。In the figure, the vertical axis shows the wafer temperature (° C), and the horizontal axis shows the heat input (w / cm).
2 ) and the thickness (t) is 0.4 on a Si wafer of thickness (t) 1.
It shows the temperature of the wafer surface when the flexible graphite material sheet is used.
該図から明らかなごとく、本発明の可撓性黒鉛材シー
トを使用した際のウエハ面の温度（×印で示す）は、従
来のヒートシンク材としてグリース、ロータリーポンプ
（RP）油を使用したときの温度範囲（斜線で示す）に入
っており、従来と同一の冷却効果が得られる。As is clear from the figure, the temperature of the wafer surface (indicated by X) when using the flexible graphite material sheet of the present invention is the same as when using grease or rotary pump (RP) oil as the conventional heat sink material. Within the temperature range (shown by diagonal lines), the same cooling effect as the conventional one can be obtained.
この結果より、ヒートシンク材として可撓性の黒鉛材
シートを使用すれば湿式のグリースやロータリーポンプ
油等と冷却効果は同一であり、かつ、乾式であるためウ
エハの汚染はなくなる。また、ウエハに接着する時間や
洗浄する時間が省略できるためスループットの向上が図
れる。更に真空チャンバ内の汚染もなくなるなどの効果
もある。From this result, when a flexible graphite sheet is used as the heat sink material, the cooling effect is the same as that of wet grease or rotary pump oil, and since it is a dry type, the wafer is not contaminated. Further, since the time for adhering to the wafer and the time for cleaning can be omitted, the throughput can be improved. Further, there is an effect that contamination in the vacuum chamber is eliminated.
このように本実施例によれば、真空チャンバ内の汚染
が少なく、真空排気時間の短縮が図られることは勿論、
真空チャンバ内の清掃頻度が少なくなる。また、塗布法
の個人差による性能のばらつきがなくなり、デバイスの
品質が安定するなどの効果がある。As described above, according to the present embodiment, it is of course possible to reduce the contamination in the vacuum chamber and shorten the vacuum exhaust time.
The frequency of cleaning the inside of the vacuum chamber is reduced. Further, there is an effect that the variation in the performance due to the individual difference in the coating method is eliminated and the quality of the device is stabilized.
以上説明した本発明のウエハの固定装置によれば、 ウエハと試料台との間に、可撓性の黒鉛材シートを介在
し、該黒鉛材シートは放射状に細孔があけられ、この放
射状の細孔に対向した試料台部に細溝が設けられている
ものであるから、 放射状に細孔があけられている可撓性の黒鉛材シート
をヒートシンク材として使用しているため、ウエハとの
密着性が良好に保たれ、従来の湿式のシリコーン油やロ
ータリーポンプ油等と冷却効果は同一となり、かつ、乾
式であるためウエハの汚染はなくなるし、取付時間がか
からないためスループットの向上が図れ、しかも真空チ
ャンバ内の汚染もなくなるので、製品の信頼性も向上す
る。According to the wafer fixing device of the present invention described above, a flexible graphite material sheet is interposed between the wafer and the sample table, and the graphite material sheet has radial pores formed therein. Since a thin groove is provided in the sample base section facing the pores, a flexible graphite sheet with pores formed radially is used as a heat sink material. Adhesiveness is kept good, cooling effect is the same as conventional wet silicone oil or rotary pump oil, and since it is dry type, wafer contamination is eliminated, and mounting time does not take, so throughput can be improved, Moreover, since the contamination in the vacuum chamber is eliminated, the reliability of the product is improved.
第１図は本発明のウエハの固定装置の一実施例を示す断
面図、第２図は第１図の平面図、、第３図は本発明に採
用される黒鉛材シートの平面図、第４図はヒートシンク
材に本発明の黒鉛材シートを用いたときのウエハ面の温
度を測定した結果を示す特性図である。 １……ウエハ、２……試料台、３……固定金具、４……
固定金具ボルト、５……黒鉛材シート、６……細孔。FIG. 1 is a sectional view showing an embodiment of a wafer fixing device of the present invention, FIG. 2 is a plan view of FIG. 1, and FIG. 3 is a plan view of a graphite material sheet adopted in the present invention. FIG. 4 is a characteristic diagram showing the results of measuring the temperature of the wafer surface when the graphite material sheet of the present invention is used as the heat sink material. 1 ... Wafer, 2 ... Sample stage, 3 ... Fixing fixture, 4 ...
Fixing bracket bolts, 5 ... Graphite sheet, 6 ... Pores.
Claims (1)
台と、該試料台に前記ウエハを固定するための固定金具
とを備えたウエハの固定装置において、 前記ウエハと試料台との間に、可撓性の黒鉛材シートを
介在し、該黒鉛材シートは放射状に細孔があけられ、こ
の放射状の細孔に対向した前記試料台部に細溝が設けら
れていることを特徴とするウエハの固定装置。1. A wafer fixing device comprising a wafer, a sample stage for mounting the wafer, and a fixing metal fixture for fixing the wafer to the sample stage, wherein the wafer is provided between the wafer and the sample stage. In addition, a flexible graphite material sheet is interposed, and the graphite material sheet is provided with radial pores, and a thin groove is provided in the sample stage portion facing the radial pores. Wafer fixing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62229584A JP2555093B2 (en) | 1987-09-16 | 1987-09-16 | Wafer fixing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62229584A JP2555093B2 (en) | 1987-09-16 | 1987-09-16 | Wafer fixing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6473724A JPS6473724A (en) | 1989-03-20 |
| JP2555093B2 true JP2555093B2 (en) | 1996-11-20 |
Family
ID=16894473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62229584A Expired - Fee Related JP2555093B2 (en) | 1987-09-16 | 1987-09-16 | Wafer fixing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2555093B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09326385A (en) * | 1996-06-04 | 1997-12-16 | Tokyo Electron Ltd | Substrate cooling method |
| JP5147192B2 (en) * | 2006-04-20 | 2013-02-20 | 株式会社東京精密 | Wafer holding method in prober, prober and high thermal conductive sheet |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53106576A (en) * | 1977-02-28 | 1978-09-16 | Nec Corp | Ion etching device |
| JPS58137225A (en) * | 1982-02-09 | 1983-08-15 | Anelva Corp | Substrate loading/unloading mechanism |
-
1987
- 1987-09-16 JP JP62229584A patent/JP2555093B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6473724A (en) | 1989-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |