JP2021141305A - Plasma processing system and edge ring exchanging method - Google Patents

Abstract

To provide a plasma processing system and an edge ring exchanging method by which, when an edge ring is exchanged in a plasma processing system, exchanging of the edge ring supported by a cover ring and exchanging of the edge ring alone are performed selectively.SOLUTION: A processing module 60 includes a plasma processing chamber 100 performing a plasma process on a substrate, and a wafer support table 400 supporting the substrate. A cover ring Ca including a conveyance device for conveying the substrate in and out and covering an external surface of an edge ring Fa disposed surrounding the substrate held on a substrate placement surface includes an annular member placement surface on which the placement is performed with the edge ring supported, a lifter 405 that lifts in a manner of being able to project from a portion overlapping with the cover ring, and another lifting pin 106 that lifts in a manner of being able to project from the substrate placement surface. A supporting part of the conveyance device can support the cover ring that supports the edge ring and can support a jig with a longer part than the inner diameter of the edge ring.SELECTED DRAWING: Figure 16

Description

The present disclosure relates to a plasma processing system and a method of replacing an edge ring.

Patent Document 1 discloses a substrate processing apparatus in which a substrate is arranged in a processing chamber, a focus ring is arranged so as to surround the substrate, and plasma processing is performed on the substrate. This substrate processing apparatus includes a mounting table provided with a susceptor having a substrate mounting surface on which a substrate is mounted and a focus ring mounting surface on which a focus ring is mounted, and a plurality of positioning pins. The positioning pin is formed in a pin shape by a material that expands in the radial direction by heating, is attached to the focus ring so as to project from the lower surface thereof, and is inserted into a positioning hole formed on the focus ring mounting surface of the susceptor to heat the pin. The focus ring is positioned by expanding and fitting in the radial direction. Further, the substrate processing apparatus disclosed in Patent Document 1 includes a lifter pin and a transfer arm. The lifter pin is provided on the mounting table so as to be recessed from the focus ring mounting surface, and lifts the focus ring together with the positioning pin to separate it from the focus ring mounting surface. The transfer arm is provided on the outside of the processing chamber, and exchanges the focus ring with the lifter pin through the carry-in / out port provided in the processing chamber with the positioning pin attached.

Japanese Unexamined Patent Publication No. 2011-54933

The technique according to the present disclosure is that when the edge ring is replaced in a plasma processing system in which both the edge ring and the covering are used, the replacement of the edge ring while being supported by the covering and the replacement of the edge ring alone are performed. Selectively.

One aspect of the present disclosure is a plasma having a substrate support and a processing container in which the substrate support is provided and configured to be decompressible, and plasma processing is performed on the substrate on the substrate support. A transfer device having a processing device, a support portion for supporting the substrate, and a transfer device for inserting and removing the support portion into the processing container to carry the substrate in and out of the processing container, and a control device. In the board support base, a cover ring covering the board mounting surface on which the board is mounted and the outer surface of the edge ring arranged so as to surround the board held on the board mounting surface supports the edge ring. An annular member mounting surface on which the ring member is mounted, a lifter that elevates and lowers so as to project from a portion of the annular member mounting surface that overlaps the covering in a plan view, an elevating mechanism that raises and lowers the lifter, and the substrate. The support portion of the transport device has the cover ring that supports the edge ring, and has another lifter that moves up and down so as to be projectable from the mounting surface and another lift mechanism that raises and lowers the other lifter. A jig that is supportable and has a portion longer than the inner diameter of the edge ring can be supported, and the control device raises the lifter, and the cover ring that supports the edge ring is placed on the annular member mounting surface. The jig supported by the support portion is moved between the step of delivering the jig to the lifter, the substrate mounting surface and the annular member mounting surface, and the covering that supports the edge ring. The step, the step of raising the other lifter and passing the jig from the support portion to the other lifter, and after retracting the support portion, the lifter and the other lifter are relatively moved. The step of passing the edge ring from the cover ring to the jig, the step of lowering only the lifter and passing the cover ring from the lifter to the annular member mounting surface, and the cover ring. After moving the support portion between the jig and the jig that supports the edge ring, the other lifter is lowered, and the jig that supports the edge ring is moved from the other lifter to the support portion. The elevating mechanism and the transport device so that the step of handing over and the step of pulling out the support portion from the processing container and carrying out the jig supporting the edge ring from the processing container are executed. And control the other moving mechanism.

According to the present disclosure, when replacing an edge ring in a plasma processing system in which both an edge ring and a covering are used, the replacement of the edge ring while being supported by the covering or the replacement of the edge ring alone is selected. Can be done

It is a top view which shows the outline of the structure of the plasma processing system which concerns on Embodiment 1 of reference. It is a vertical cross-sectional view which shows the outline of the structure of the processing module of FIG. It is a partially enlarged view of FIG. It is a partial cross-sectional view of the portion different from FIG. 2 over the circumferential direction of the wafer support. It is a figure which shows typically the state in the processing module in the process of attaching an edge ring. It is a figure which shows typically the state in the processing module in the process of attaching an edge ring. It is a figure which shows typically the state in the processing module in the process of attaching an edge ring. It is a figure for demonstrating another example of a lifting pin. It is a figure for demonstrating another example of an electrostatic chuck. It is a partially enlarged cross-sectional view which shows the outline of the structure of the wafer support base as the substrate support base which concerns on Embodiment 2 of reference. It is a partially enlarged cross-sectional view which shows the outline of the structure of the wafer support base as the substrate support base which concerns on Embodiment 3 of reference. It is a top view which shows the outline of the structure of the plasma processing system which concerns on this embodiment. It is a partially enlarged cross-sectional view which shows the outline of the structure of the wafer support base as the substrate support base which concerns on this embodiment. It is a partially enlarged sectional view which shows another example of a wafer support. It is a partially enlarged sectional view which shows another example of a wafer support. It is a figure which shows typically the state in the processing module during the removal processing of a single edge ring. It is a figure which shows typically the state in the processing module during the removal processing of a single edge ring. It is a figure which shows typically the state in the processing module during the removal processing of a single edge ring. It is a figure which shows typically the state in the processing module during the removal processing of a single edge ring. It is a figure which shows typically the state in the processing module during the removal processing of a single edge ring. It is a figure which shows typically the state in the processing module during the removal processing of a single edge ring. It is a figure which shows typically the state in the processing module during the removal processing of the cover ring which supported the edge ring. It is a figure which shows typically the state in the processing module during the removal processing of the cover ring which supported the edge ring. It is a figure which shows typically the state in the processing module during the removal processing of the cover ring which supported the edge ring. It is a figure which shows typically the state in the processing module during the removal processing of the cover ring which supported the edge ring. It is a figure which shows typically the state in the processing module during the removal processing of the cover ring which supported the edge ring. It is a figure which shows typically the state in the processing module during the removal processing of the cover ring which supported the edge ring.

(Reference embodiment)
In the manufacturing process of a semiconductor device or the like, a substrate such as a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to plasma treatment such as etching or film formation by using plasma. The plasma treatment is performed in a state where the wafer is held by a substrate support provided in a treatment chamber configured to be decompressible.

Further, in order to obtain good and uniform processing results in the central portion and the peripheral portion of the substrate during plasma processing, it is called an edge ring or a focus ring so as to surround the periphery of the substrate on the substrate support. An annular member may be placed. When the edge ring is used, the edge ring is accurately positioned and arranged so that a uniform processing result can be obtained in the circumferential direction at the peripheral edge of the substrate. For example, in Patent Document 1, the edge ring is positioned by using a positioning pin that is attached to the edge ring so as to project from the lower surface thereof and is inserted into a positioning hole formed on the edge ring mounting surface.

When the edge ring is worn out, the replacement is generally performed by an operator, but it is also considered to replace the edge ring by using a transport device for transporting the edge ring. For example, in Patent Document 1, both a lifter pin, which is provided so as to protrude from the edge ring mounting surface of the mounting table and lifts the edge ring to separate it from the edge ring mounting surface, and both a wafer and an edge ring in the processing chamber. The edge ring is replaced by using a transport arm that can carry in and out.

However, when exchanging the edge ring using a transport device, if the transport accuracy of the edge ring is poor, a part of the edge ring may be applied to the board mounting surface of the board support, and the edge ring of the board support may be replaced. The edge ring may not be properly placed on the mounting surface. For example, if the difference between the inner diameter of the edge ring and the diameter of the board mounting surface is smaller than the transport accuracy (transport error) of the edge ring, the position of the board mounting surface is higher than the position of the edge ring mounting surface. , The inside of the edge ring may be caught on the substrate mounting surface, and the edge ring may not be mounted on the edge ring mounting surface.

Further, during plasma treatment, an annular member called a covering ring may be arranged to cover the outer surface of the edge ring in the circumferential direction. In this case as well, if a transport device is used to replace the cover ring, the cover ring may not be properly and accurately placed on the mounting surface with respect to the cover ring.

Therefore, in the technique according to the reference embodiment, the annular member is positioned and appropriately mounted on the mounting surface of the substrate support with respect to the annular member regardless of the transfer accuracy of the annular member.

Hereinafter, a method of replacing the substrate support, the plasma processing system, and the edge ring according to the reference embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.

(Reference Embodiment 1)
FIG. 1 is a plan view showing an outline of the configuration of the plasma processing system according to the first embodiment of the reference.
In the plasma processing system 1 of FIG. 1, the wafer W as a substrate is subjected to plasma processing such as etching, film formation, and diffusion using plasma.

As shown in FIG. 1, the plasma processing system 1 has an atmosphere unit 10 and a decompression unit 11, and the atmosphere unit 10 and the decompression unit 11 are integrally connected via load lock modules 20 and 21. The atmospheric unit 10 includes an atmospheric module that performs a desired treatment on the wafer W in an atmospheric pressure atmosphere. The decompression unit 11 includes a decompression module that performs a desired process on the wafer W in a decompression atmosphere.

The load lock modules 20 and 21 are provided so as to connect the loader module 30 described later in the atmosphere unit 10 and the transfer module 50 described later in the decompression unit 11 via a gate valve (not shown). The load lock modules 20 and 21 are configured to temporarily hold the wafer W. Further, the load lock modules 20 and 21 are configured so that the inside can be switched between an atmospheric pressure atmosphere and a depressurized atmosphere (vacuum state).

The atmosphere unit 10 has a loader module 30 provided with a transport device 40 described later, and a load port 32 on which the hoops 31a and 31b are placed. The hoop 31a can store a plurality of wafers W, and the hoop 31b can store a plurality of edge rings F. The loader module 30 is adjacently provided with an oriental module (not shown) for adjusting the horizontal orientation of the wafer W and the edge ring F, a storage module for storing a plurality of wafers W (not shown), and the like. It may be.

The loader module 30 has a rectangular housing inside, and the inside of the housing is maintained in an atmospheric pressure atmosphere. A plurality of, for example, five load ports 32 are arranged side by side on one side surface forming the long side of the housing of the loader module 30. The load lock modules 20 and 21 are arranged side by side on the other side surface forming the long side of the housing of the loader module 30.

Inside the loader module 30, a transport device 40 for transporting the wafer W and the edge ring F is provided. The transfer device 40 has a transfer arm 41 that supports and moves the wafer W and the edge ring F, a rotary table 42 that rotatably supports the transfer arm 41, and a base 43 on which the rotary table 42 is mounted. There is. Further, inside the loader module 30, a guide rail 44 extending in the longitudinal direction of the loader module 30 is provided. The base 43 is provided on the guide rail 44, and the transport device 40 is configured to be movable along the guide rail 44.

The decompression unit 11 has a transfer module 50 that conveys the wafer W and the edge ring F, and a processing module 60 as a plasma processing device that performs a desired plasma processing on the wafer W transferred from the transfer module 50. The insides of the transfer module 50 and the processing module 60 are each maintained in a reduced pressure atmosphere. A plurality of processing modules 60, for example, eight are provided for one transfer module 50. The number and arrangement of the processing modules 60 are not limited to the embodiment of this reference, and can be arbitrarily set, and at least one processing module that requires replacement of the edge ring F may be provided.

The transfer module 50 has a polygonal (pentagonal shape in the illustrated example) housing inside, and is connected to the load lock modules 20 and 21 as described above. The transfer module 50 conveys the wafer W carried into the load lock module 20 to one processing module 60, and transfers the wafer W subjected to the desired plasma processing by the processing module 60 via the load lock module 21. It is carried out to the atmosphere unit 10. Further, the transfer module 50 conveys the edge ring F carried into the load lock module 20 to one processing module 60, and the edge ring F to be replaced in the processing module 60 is passed through the load lock module 21 to the atmosphere. Carry out to section 10.

The processing module 60 performs plasma processing such as etching, film formation, and diffusion on the wafer W using plasma. For the processing module 60, a module that performs the desired plasma processing can be arbitrarily selected. Further, the processing module 60 is connected to the transfer module 50 via a gate valve 61. The configuration of the processing module 60 will be described later.

Inside the transfer module 50, a transfer device 70 for transporting the wafer W and the edge ring F is provided. The transfer device 70 includes a transfer arm 71 as a support portion that supports and moves the wafer W and the edge ring F, a rotary table 72 that rotatably supports the transfer arm 71, and a base 73 on which the rotary table 72 is mounted. have. Further, inside the transfer module 50, a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided. The base 73 is provided on the guide rail 74, and the transport device 70 is configured to be movable along the guide rail 74.

In the transfer module 50, the wafer W and the edge ring F held in the load lock module 20 are received by the transfer arm 71 and carried into the processing module 60. Further, the wafer W and the edge ring F held in the processing module 60 are received by the transfer arm 71 and carried out to the load lock module 21.

Further, the plasma processing system 1 has a control device 80. In one embodiment, the control device 80 processes computer-executable instructions that cause the plasma processing system 1 to perform the various steps described in the present disclosure. The control device 80 may be configured to control each of the other elements of the plasma processing system 1 to perform the various steps described herein. In one embodiment, some or all of the control device 80 may be included in other elements of the plasma processing system 1. The control device 80 may include, for example, a computer 90. The computer 90 may include, for example, a processing unit (CPU: Central Processing Unit) 91, a storage unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control operations based on the program stored in the storage unit 92. The storage unit 92 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

Next, the wafer processing performed by using the plasma processing system 1 configured as described above will be described.

First, the transfer device 40 takes out the wafer W from the desired hoop 31a and carries it into the load lock module 20. When the wafer W is carried into the load lock module 20, the inside of the load lock module 20 is sealed and the pressure is reduced. After that, the inside of the load lock module 20 and the inside of the transfer module 50 are communicated with each other.

Next, the wafer W is held by the transfer device 70 and transferred from the load lock module 20 to the transfer module 50.

Next, the gate valve 61 is opened, and the wafer W is carried into the desired processing module 60 by the transfer device 70. After that, the gate valve 61 is closed, and the wafer W is subjected to the desired processing in the processing module 60. The processing performed on the wafer W in the processing module 60 will be described later.

Next, the gate valve 61 is opened, and the wafer W is carried out from the processing module 60 by the transfer device 70. After that, the gate valve 61 is closed.

Next, the wafer W is carried into the load lock module 21 by the transfer device 70. When the wafer W is carried into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. After that, the inside of the load lock module 21 and the inside of the loader module 30 are communicated with each other.

Next, the wafer W is held by the transfer device 40, returned from the load lock module 21 to the desired hoop 31a via the loader module 30, and accommodated. This completes a series of wafer processing in the plasma processing system 1.

The transfer of the edge ring between the hoop 31b and the desired processing module 60 at the time of exchanging the edge ring is the transfer of the wafer between the hoop 31a and the desired processing module 60 at the time of the above-mentioned wafer processing. It is performed in the same way as transportation.

Subsequently, the processing module 60 will be described with reference to FIGS. 2 to 4. FIG. 2 is a vertical cross-sectional view showing an outline of the configuration of the processing module 60. FIG. 3 is a partially enlarged view of FIG. FIG. 4 is a partial cross-sectional view of a portion different from FIG. 2 in the circumferential direction of the wafer support 101, which will be described later.

As shown in FIG. 2, the processing module 60 includes a plasma processing chamber 100 as a processing container, a gas supply unit 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. The processing module 60 also includes a gas supply unit 120, which will be described later (see FIG. 4). Further, the processing module 60 includes a wafer support 101 as a substrate support and an upper electrode shower head 102.

The wafer support 101 is arranged in the lower region of the plasma processing space 100s in the plasma processing chamber 100 configured to be decompressible. The upper electrode shower head 102 is located above the wafer support 101 and may function as part of the ceiling of the plasma processing chamber 100.

The wafer support base 101 is configured to support the wafer W in the plasma processing space 100s. In one embodiment, the wafer support 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, an elevating pin 106 and an elevating pin 107. Although not shown, in one embodiment, the wafer support 101 may include a temperature control module configured to adjust at least one of the electrostatic chuck 104 and the wafer W to the target temperature. The temperature control module may include a heater, a flow path, or a combination thereof. A temperature control fluid such as a refrigerant or a heat transfer gas flows through the flow path.

The lower electrode 103 is made of a conductive material such as aluminum. In one embodiment, the temperature control module described above may be provided on the lower electrode 103.

The electrostatic chuck 104 is a member configured to be able to attract and hold both the wafer W and the edge ring F by electrostatic force, and is provided on the lower electrode 103. The upper surface of the central portion of the electrostatic chuck 104 is formed higher than the upper surface of the peripheral portion. The upper surface 104a of the central portion of the electrostatic chuck 104 is a substrate mounting surface on which the wafer W is mounted, and the upper surface 104b of the peripheral portion of the peripheral portion of the electrostatic chuck 104 is an annular member on which the edge ring F as an annular member is mounted. It becomes a member mounting surface. The edge ring F is an annular member arranged so as to surround the wafer W placed on the upper surface 104a of the central portion of the electrostatic chuck 104.

An electrode 108 for sucking and holding the wafer W is provided at the center of the electrostatic chuck 104, and an electrode 109 for sucking and holding the edge ring F is provided at the peripheral edge of the electrostatic chuck 104. .. The electrostatic chuck 104 has a configuration in which electrodes 108 and 109 are sandwiched between insulating materials made of an insulating material.

A DC voltage from a DC power source (not shown) is applied to the electrode 108. Due to the electrostatic force generated by this, the wafer W is attracted and held on the upper surface 104a of the central portion of the electrostatic chuck 104. Similarly, a DC voltage from a DC power source (not shown) is applied to the electrode 109. Due to the electrostatic force generated by this, the edge ring F is attracted and held on the upper surface 104b of the peripheral edge of the electrostatic chuck 104. As shown in FIG. 3, the electrode 109 is a bipolar type including a pair of electrodes 109a and 109b.
In the embodiment of this reference, the central portion of the electrostatic chuck 104 provided with the electrode 108 and the peripheral portion provided with the electrode 109 are integrated, but the central portion and the peripheral portion are separate bodies. May be good.
Further, in the embodiment of this reference, the electrode 109 for sucking and holding the edge ring F is assumed to be a bipolar type, but may be a unipolar type.

Further, the central portion of the electrostatic chuck 104 is formed to have a diameter smaller than the diameter of the wafer W, for example, and as shown in FIG. 2, when the wafer W is placed on the upper surface 104a, the peripheral edge of the wafer W is formed. The portion projects from the central portion of the electrostatic chuck 104.
The edge ring F has a step formed on the upper portion thereof, and the upper surface of the outer peripheral portion is formed higher than the upper surface of the inner peripheral portion. The inner peripheral portion of the edge ring F is formed so as to go under the peripheral edge portion of the wafer W protruding from the central portion of the electrostatic chuck 104. That is, the inner diameter of the edge ring F is formed to be smaller than the outer diameter of the wafer W.

The insulator 105 is a cylindrical member made of ceramic or the like, and supports the electrostatic chuck 104. The insulator 105 is formed so as to have an outer diameter equivalent to the outer diameter of the lower electrode 103, and supports the peripheral edge portion of the lower electrode 103, for example. Further, the insulator 105 is provided so that its inner peripheral surface is located on the outer side in the radial direction of the electrostatic chuck 104 from the elevating mechanism 114 described later.

The elevating pin 106 is a columnar member that elevates and descends from the upper surface 104a of the central portion of the electrostatic chuck 104 so as to be recessed, and is formed of, for example, ceramic. Three or more lifting pins 106 are provided at intervals from each other along the circumferential direction of the electrostatic chuck 104, that is, the circumferential direction of the upper surface 104a. The elevating pins 106 are provided, for example, at equal intervals along the circumferential direction. The elevating pin 106 is provided so as to extend in the vertical direction.

The elevating pin 106 is connected to an elevating mechanism 110 that elevates and elevates the elevating pin 106. The elevating mechanism 110 has, for example, a support member 111 that supports a plurality of elevating pins 106, and a driving unit 112 that generates a driving force for elevating and lowering the support members 111 and elevates and elevates the plurality of elevating pins 106. The drive unit 112 has a motor (not shown) that generates the drive force.

The elevating pin 106 is inserted into a through hole 113 extending downward from the upper surface 104a of the central portion of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through hole 113 is formed so as to penetrate the central portion of the electrostatic chuck 104 and the lower electrode 103.

The elevating pin 107 is a columnar member that elevates and descends from the upper surface 104b of the peripheral edge of the electrostatic chuck 104 so as to be recessed, and is formed of, for example, alumina, quartz, SUS, or the like. Three or more lifting pins 107 are provided at intervals from each other along the circumferential direction of the electrostatic chuck 104, that is, the circumferential direction of the upper surface 104a of the central portion and the upper surface 104b of the peripheral portion. The elevating pins 107 are provided, for example, at equal intervals along the circumferential direction. The elevating pin 107 is provided so as to extend in the vertical direction.
The thickness of the elevating pin 107 is, for example, 1 to 3 mm.

The elevating pin 107 is connected to an elevating mechanism 114 that drives the elevating pin 107. The elevating mechanism 114 is provided for each elevating pin 107, for example, and has a support member 115 that supports the elevating pin 107 so as to be movable in the horizontal direction. The support member 115 has, for example, a thrust bearing in order to support the elevating pin 107 so as to be movable in the horizontal direction. Further, the elevating mechanism 114 has a driving unit 116 that generates a driving force for elevating and lowering the support member 111 and elevates and elevates the elevating pin 107. The drive unit 116 has a motor (not shown) that generates the drive force.

The elevating pin 107 is inserted into a through hole 117 extending downward from the upper surface 104b of the peripheral edge of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through hole 117 is formed so as to penetrate the peripheral edge portion of the electrostatic chuck 104 and the lower electrode 103.
The through hole 117 is formed with at least a position accuracy higher than the transfer accuracy of the edge ring by the transfer device 70.

The elevating pin 107 is formed in a columnar shape, for example, except for the upper end portion, and the upper end portion is formed in a hemispherical shape that gradually narrows upward. The upper end of the elevating pin 107 abuts on the bottom surface of the edge ring F when it rises to support the edge ring F. As shown in FIG. 3, a recess F1 formed from an upwardly recessed concave surface F1a is provided at a position corresponding to each of the elevating pins 107 on the bottom surface of the edge ring F.

In a plan view, the size D1 of the recess F1 (opening diameter) of the edge ring F is the transfer accuracy (error) (± Xμm) of the edge ring F by the transfer device 70 above the upper surface 104b of the electrostatic chuck 104. It is larger and larger than the size D2 of the upper end of the elevating pin 107. For example, the relationship of D1> D2 and D1> 2X is satisfied, and D1 is about 0.5 mm. In another example, D1 may be 0.5-3 mm.

Further, where the upper end portion of the elevating pin 107 is formed in a hemispherical shape that gradually narrows upward as described above, the concave surface F1a forming the concave portion F1 of the edge ring F is formed on the upper end portion of the elevating pin 107. Its curvature is set to be smaller than that of the convex surface (that is, the upper end surface) 107a forming the hemisphere. That is, the concave surface F1a has a larger radius of curvature than the convex surface 107a.

When the thickness of the outer peripheral portion of the edge ring F is 3 to 5 mm, the depth of the recess F1 is, for example, 0.5 to 1 mm.
Further, for example, Si or SiC is used as the material of the edge ring F.

Further, as shown in FIG. 4, a heat transfer gas supply path 118 is formed on the upper surface 104b of the peripheral edge portion of the electrostatic chuck 104. The heat transfer gas supply path 118 supplies a heat transfer gas such as helium gas to the back surface of the edge ring F placed on the upper surface 104b. The heat transfer gas supply path 118 is provided so as to communicate the fluid with the upper surface 104b. Further, the side of the heat transfer gas supply path 118 opposite to the upper surface 104b is in fluid communication with the gas supply unit 120. The gas supply unit 120 may include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to supply, for example, from the gas source 121 to the heat transfer gas supply path via the flow rate controller 122. Each flow rate controller 122 may include, for example, a mass flow controller or a pressure controlled flow rate controller.
Although not shown, the heat transfer gas is supplied to the back surface of the wafer W placed on the upper surface 104a also with respect to the upper surface 104a of the central portion of the electrostatic chuck 104, so that it is the same as the heat transfer gas supply path 118. Is being formed.
Further, an intake passage for vacuum suctioning the edge ring F placed on the upper surface 104b of the peripheral edge of the electrostatic chuck 104 may be formed. The intake passage is provided in the electrostatic chuck 104 so as to communicate the fluid with the upper surface 104b, for example. The heat transfer gas supply path and the intake path described above may be in common in whole or in part.

Returning to the description of FIG. The upper electrode shower head 102 is configured to supply one or more processing gases from the gas supply unit 130 to the plasma processing space 100s. In one embodiment, the upper electrode shower head 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas outlets 102c. The gas inlet 102a communicates with the gas supply unit 130 and the gas diffusion chamber 102b, for example. The plurality of gas outlets 102c communicate with the gas diffusion chamber 102b and the plasma processing space 100s in a fluid manner. In one embodiment, the upper electrode shower head 102 is configured to supply one or more processing gases from the gas inlet 102a to the plasma processing space 100s via the gas diffusion chamber 102b and the plurality of gas outlets 102c.

The gas supply unit 130 may include one or more gas sources 131 and one or more flow controller 132. In one embodiment, the gas supply unit 130 is configured to, for example, supply one or more treated gases from the corresponding gas sources 131 to the gas inlet 102a via the corresponding flow rate controllers 132. Will be done. Each flow rate controller 132 may include, for example, a mass flow controller or a pressure controlled flow rate controller. Further, the gas supply unit 130 may include one or more flow rate modulation devices that modulate or pulse the flow rate of one or more processing gases.

The RF power supply unit 140 transmits RF power, for example one or more RF signals, to one or more such as the lower electrode 103, the upper electrode shower head 102, or both the lower electrode 103 and the upper electrode shower head 102. It is configured to supply to the electrodes of. As a result, plasma is generated from one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least a part of the plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber. The RF power supply unit 140 includes, for example, two RF generation units 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have frequencies in the range of 27 MHz to 100 MHz.

Further, in one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generation unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may have frequencies in the range of 400 kHz to 13.56 MHz. Instead, a DC (Direct Current) pulse generation unit may be used instead of the second RF generation unit 141b.

Further, although not shown, other embodiments can be considered in the present disclosure. For example, in an alternative embodiment, the RF power supply unit 140 supplies the first RF signal from the RF generation unit to the lower electrode 103, and supplies the second RF signal from the other RF generation unit to the lower electrode 103. The third RF signal may be configured to be supplied to the lower electrode 103 from yet another RF generator. In addition, in other alternative embodiments, a DC voltage may be applied to the upper electrode shower head 102.

Furthermore, in various embodiments, the amplitude of one or more RF signals (ie, first RF signal, second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsing the RF signal amplitude between the on and off states, or between two or more different on states.

The exhaust system 150 may be connected to, for example, an exhaust port 100e provided at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbo molecular pump, a roughing pump or a combination thereof.

Next, an example of wafer processing performed by using the processing module 60 configured as described above will be described. The processing module 60 performs processing such as etching processing, film forming processing, and diffusion processing on the wafer W.

First, the wafer W is carried into the plasma processing chamber 100, and the wafer W is placed on the electrostatic chuck 104 by raising and lowering the elevating pin 106. After that, a DC voltage is applied to the electrode 108 of the electrostatic chuck 104, whereby the wafer W is electrostatically attracted to and held by the electrostatic chuck 104 by electrostatic force. Further, after the wafer W is carried in, the inside of the plasma processing chamber 100 is depressurized to a predetermined degree of vacuum by the exhaust system 150.

Next, the processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s via the upper electrode shower head 102. Further, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103, whereby the processing gas is excited to generate plasma. At this time, the high frequency power LF for ion attraction may be supplied from the RF power supply unit 140. Then, the wafer W is subjected to plasma treatment by the action of the generated plasma.

During the plasma treatment, heat transfer gas such as He gas or Ar gas is supplied to the bottom surface of the wafer W and the edge ring F adsorbed and held by the electrostatic chuck 104 via the heat transfer gas supply path 118 or the like. Will be done.

When the plasma treatment is completed, the supply of the heat transfer gas to the bottom surface of the wafer W may be stopped. Further, the supply of the high frequency power HF from the RF power supply unit 140 and the supply of the processing gas from the gas supply unit 130 are stopped. If the high frequency power LF is supplied during the plasma processing, the supply of the high frequency power LF is also stopped. Next, the adsorption and holding of the wafer W by the electrostatic chuck 104 is stopped.

After that, the wafer W is raised by the elevating pin 106, and the wafer W is separated from the electrostatic chuck 104. At the time of this detachment, the static elimination treatment of the wafer W may be performed. Then, the wafer W is carried out from the plasma processing chamber 100, and a series of wafer processing is completed.

The edge ring F is attracted and held by the electrostatic force during the wafer processing, and specifically, during the plasma processing and before and after the plasma processing, the edge ring F is adsorbed and held by the electrostatic force. Before and after the plasma treatment, different voltages are applied to the electrodes 109a and 109b so that a potential difference is generated between the electrodes 109a and 109b, and the electrostatic force generated by the potential difference causes the edge ring F. Is adsorbed and held. On the other hand, during the plasma treatment, the same voltage (for example, the same positive voltage) is applied to the electrode 109a and the electrode 109b, and the potential difference between the edge ring F and the electrode 109a and the electrode 109b, which are set to the ground potential through the plasma. Occurs. The edge ring F is attracted and held by the electrostatic force generated by this according to the potential difference. While the edge ring F is attracted by the electrostatic force, the elevating pin 107 is in a state of being submerged from the upper surface 104b of the peripheral edge portion of the electrostatic chuck 104.

As described above, since the edge ring F is attracted and held by the electrostatic force, it is located between the edge ring F and the electrostatic chuck 104 when the supply of the heat transfer gas to the bottom surface of the edge ring F is started. There is no deviation.

Subsequently, an example of the process of attaching the edge ring F into the processing module 60 performed by using the above-mentioned plasma processing system 1 will be described with reference to FIGS. 5 to 7. 5 and 7 are diagrams schematically showing a state in the processing module 60 during the mounting process. The following processing is performed under the control of the control device 80. Further, the following processing is performed, for example, in a state where the electrostatic chuck 104 is at room temperature.

First, from the transfer module 50 in the vacuum atmosphere of the plasma processing system 1, into the decompressed plasma processing chamber 100 of the processing module 60 to which the edge ring F is attached, via an inlet / outlet (not shown). The transport arm 71 holding the edge ring F is inserted. Then, as shown in FIG. 5, the edge ring F held by the transport arm 71 is transported above the upper surface 104b of the peripheral edge portion of the electrostatic chuck 104. The edge ring F is held by the transport arm 71 after its circumferential direction is adjusted.

Next, all the elevating pins 107 are raised, and as shown in FIG. 6, the edge ring F is delivered from the transport arm 71 to the elevating pin 107. Specifically, all the elevating pins 107 are raised, and first, the upper end portion of the elevating pin 107 comes into contact with the bottom surface of the edge ring F held by the transport arm 71. At this time, the upper end portion of the elevating pin 107 fits in the recess F1 provided on the bottom surface of the edge ring F. This is because, as described above, the recess F1 is provided at a position corresponding to each of the elevating pins 107 on the bottom surface of the edge ring F, and in a plan view, the size of the recess F1 is the edge of the transport device 70. This is because it is larger than the transport accuracy of the ring F and larger than the size of the upper end portion of the elevating pin 107. When the elevating pin 107 continues to rise even after the upper end of the elevating pin 107 comes into contact with the bottom surface of the edge ring F, the edge ring F is delivered to the elevating pin 107 and supported as shown in FIG. Will be done.

As described above, the concave surface F1a forming the concave portion F1 of the edge ring F is set to have a smaller curvature than the convex surface 107a forming the hemispherical shape at the upper end of the elevating pin 107. Therefore, the edge ring F moves as follows and is positioned with respect to the elevating pin 107 even if the position with respect to the elevating pin 107 is deviated immediately after the edge ring F is delivered to the elevating pin 107. That is, the edge ring F moves so that the top of the upper end portion of the elevating pin 107 relatively slides on the concave surface F1a of the edge ring F. Then, the edge ring F stops at a point where the center of the recess F1 and the center of the upper end of the elevating pin 107 coincide with each other in a plan view, that is, the deepest portion of the recess F1 and the top of the upper end of the elevating pin 107 meet. It stops at a point where they match in a plan view, and is positioned with respect to the elevating pin 107 at that position.

After the edge ring F is delivered to the elevating pin 107, each elevating pin 107 may be finely moved up and down in order to promote the movement for the positioning, or the elevating pin 107 may be moved up and down at a different speed. It may be lowered or lowered at high speed.

After positioning the edge ring F with respect to the elevating pin 107, the transfer arm 71 is extracted from the plasma processing chamber 100 and the elevating pin 107 is lowered, whereby the edge ring F is electrostatically charged as shown in FIG. It is placed on the upper surface 104a of the peripheral edge of the chuck 104.
Since the edge ring F is positioned with respect to the elevating pin 107 as described above, and the through hole 117 and the elevating pin 107 are provided with high accuracy with respect to the center of the electrostatic chuck 104, the edge ring F is provided. It is placed on the upper surface 104a in a state of being positioned with respect to the center of the electrostatic chuck 104.
The elevating pin 107 is lowered, for example, until the upper end surface of the elevating pin 107 sinks from the upper surface 104a of the peripheral edge portion of the electrostatic chuck 104.

After that, a DC voltage from a DC power supply (not shown) is applied to the electrode 109 provided on the peripheral edge of the electrostatic chuck 104, and the edge ring F is attracted and held on the upper surface 104b by the electrostatic force generated by the DC voltage. .. Specifically, different voltages are applied to the electrodes 109a and 109b, and the edge ring F is attracted and held on the upper surface 104b by the electrostatic force generated by the voltages according to the potential difference.
This completes a series of edge ring F attachment processes.

When the above-mentioned intake passage is provided, after the edge ring F is placed on the upper surface 104b, it is vacuum-adsorbed to the upper surface 104b using the intake passage before being attracted and held by electrostatic force. It may be. Then, after switching from vacuum suction using the intake passage to suction holding by electrostatic force, the degree of vacuum in the intake passage is measured, and based on the measurement result, it is determined whether to reposition the edge ring F on the upper surface 104b. You may.

The removal process of the edge ring F is performed in the reverse procedure of the above-mentioned attachment process of the edge ring F.
When removing the edge ring F, the edge ring F may be cleaned and then the edge ring F may be carried out from the plasma processing chamber 100.

As described above, on the wafer support 101 according to the embodiment of this reference, the upper surface 104a on which the wafer W is placed and the edge ring F arranged so as to surround the wafer W held on the upper surface are placed. It has an upper surface 104b, three or more elevating pins 107 that elevate and descend from the upper surface 104b, and an elevating mechanism 114 that elevates and elevates the elevating pin 107. Further, a recess F1 formed from a concave surface F1a recessed upward is provided at a position corresponding to each of the elevating pins 107 on the bottom surface of the edge ring F. Then, in a plan view, the size of the concave portion F1 is larger than the transport error of the edge ring F upward on the upper surface 104b and larger than the size of the upper end portion of the elevating pin 107. Therefore, when the elevating pin 107 is raised and brought into contact with the bottom surface of the edge ring F, the upper end portion of the elevating pin 107 can be accommodated in the recess F1 of the edge ring F. Further, in the embodiment of the present reference, the upper end portion of the elevating pin 107 is formed in a hemispherical shape that gradually narrows upward, and the concave surface F1a forming the concave portion F1 forms the hemispherical shape of the upper end portion of the elevating pin 107. The curvature is smaller than the convex surface to be formed. Therefore, when the edge ring F is supported by the elevating pin 107, the edge ring F is positioned with respect to the elevating pin 107 at a position where the deepest portion of the recess F1 and the top of the upper end of the elevating pin 107 coincide with each other in a plan view. can do. Therefore, when the elevating pin 107 supporting the edge ring F is lowered, the elevating pin 107 can be positioned with respect to the electrostatic chuck 104 and placed on the upper surface 104b. That is, according to the embodiment of this reference, the edge ring F can be positioned and placed on the wafer support 101 regardless of the transfer accuracy of the edge ring F.
Further, if the wafer support 101 according to the embodiment of this reference is provided in the plasma processing device, the edge ring F can be replaced by using the transfer device 70 without the intervention of an operator. When the operator replaces the edge ring, it is necessary to open the processing container in which the edge ring is arranged to the atmosphere. However, if the wafer support 101 according to the embodiment of this reference is provided, the edge is used by using the transfer device 70. Since the ring F can be replaced, it is not necessary to open the plasma processing chamber 100 to the atmosphere at the time of replacement. Therefore, according to the embodiment of this reference, the time required for replacement can be significantly shortened. Further, in the embodiment of this reference, since three or more elevating pins are provided, in addition to the alignment of the edge ring F in the radial direction (the direction from the center of the wafer support base 101 toward the outer circumference), the edge ring F Alignment in the circumferential direction is possible.

Further, in the embodiment of this reference, the elevating mechanism 114 is provided for each elevating pin 107, and further has a support member 115 that movably supports the elevating pin 107 in the horizontal direction. Therefore, when the electrostatic chuck 104 is thermally expanded or contracted, the elevating pin 107 can be moved in the horizontal direction in accordance with the thermal expansion or contraction. Therefore, when the electrostatic chuck 104 is thermally expanded or contracted, the elevating pin 107 is not damaged.

Further, in the embodiment of this reference, after the edge ring F is placed, the electrode 109 is used to attract and hold the edge ring F by electrostatic force. Therefore, it is not necessary to provide protrusions, recesses, or the like for suppressing the displacement of the edge ring F after mounting on the bottom surface of the edge ring F or the mounting surface of the edge ring F (upper surface 104b of the electrostatic chuck 104). In particular, since it is not necessary to provide the above-mentioned protrusions or the like on the upper surface 104b of the electrostatic chuck 104, it is possible to suppress the complexity of the configuration of the electrostatic chuck 104.

Further, in the embodiment of this reference, since there is no other member between the electrostatic chuck 104 of the wafer support 101 and the edge ring F, the cumulative tolerance is small.

FIG. 8 is a diagram for explaining another example of the elevating pin.
The elevating pin 160 of FIG. 8 has a columnar portion 162 and a connecting portion 163 in addition to the hemispherically formed upper end portion 161.

The columnar portion 162 is formed in a columnar shape thicker than the upper end portion 161. Specifically, for example, the columnar portion 162 is formed in a columnar shape thicker than the upper end portion 161.
The connecting portion 163 is a portion that connects the upper end portion 161 and the columnar portion 162. This connecting portion is formed in a frustum shape that gradually narrows upward. Specifically, for example, a cone whose lower end has the same diameter as the columnar portion 162 and whose upper end has the same diameter as the upper end portion 161. It is formed in a trapezoidal shape.

By using the elevating pin 160, the positioning accuracy of the edge ring F with respect to the elevating pin 160 can be further improved.
By using the elevating pin 107 described above, the recess F1 can be made shallower, so that the edge ring F can be made thinner and lighter.

FIG. 9 is a diagram for explaining another example of the electrostatic chuck.
The electrostatic chuck 170 of FIG. 9 is provided with an insulating guide 180 in a through hole 117 through which the elevating pin 107 is inserted.
The guide 180 is, for example, a resin cylindrical member, and is fitted in the through hole 117.
In the electrostatic chuck 170, the elevating pin 107 is used by being inserted into a guide 180 provided in the through hole 117, and the moving direction of the elevating pin 107 at the time of ascending / descending is defined in the vertical direction by the guide 180. Therefore, the upper end of the elevating pin 107 is more accurately positioned with respect to the electrostatic chuck 170. Therefore, when the elevating pin 107 in the state where the edge ring F is positioned and supported is lowered and the edge ring F is placed on the upper surface 104b of the electrostatic chuck 170, the edge ring F is placed on the electrostatic chuck 170 with respect to the electrostatic chuck 170. It can be placed on the upper surface 104b in a state where it is positioned more accurately.

(Reference Embodiment 2)
FIG. 10 is a partially enlarged cross-sectional view showing an outline of the configuration of the wafer support base 200 as the substrate support base according to the second embodiment of the reference.
In the first embodiment of the reference, the edge ring F is the replacement target, but in the embodiment of the present reference, the cover ring C is the replacement target. The covering C is an annular member that covers the outer surface of the edge ring F in the circumferential direction.

The wafer support 200 of FIG. 10 has a lower electrode 201, an electrostatic chuck 202, a support 203, an insulator 204, and an elevating pin 205.
The lower electrode 103 and the electrostatic chuck 104 shown in FIG. 2 and the like are provided with through holes 117 so as to penetrate them, but the lower electrode 201 and the electrostatic chuck 202 are provided with through holes 117. No. In this respect, the lower electrode 201 and the electrostatic chuck 202 are different from the lower electrode 103 and the electrostatic chuck 104.

The support 203 is a member formed in an annular shape in a plan view using, for example, quartz, and supports the lower electrode 103 and the covering C. The upper surface 203a of the support 203 serves as an annular member mounting surface on which the cover ring C as the annular member to be replaced is mounted.

The insulator 204 is a cylindrical member made of ceramic or the like, and supports the support 203. The insulator 204 is formed so as to have an outer diameter equivalent to the outer diameter of the support 203, for example, and supports the peripheral edge portion of the support 203.

The elevating pin 107 shown in FIG. 2 and the like is inserted through a through hole 117 provided so as to penetrate the lower electrode 103 and the electrostatic chuck 104, whereas the elevating pin 205 raises and lowers the support 203 from the upper surface 203a. It is inserted through a through hole 206 penetrating in the direction. In this respect, the elevating pin 205 and the elevating pin 107 are different. Similar to the elevating pin 107, three or more elevating pins 205 are provided along the circumferential direction of the electrostatic chuck 202 at intervals from each other.

Like the elevating pin 107, the elevating pin 205 is formed in a hemispherical shape whose upper end portion gradually narrows upward. The upper end of the elevating pin 205 abuts on the bottom surface of the cover ring C when it is raised to support the cover ring C. A recess C1 formed from an upwardly recessed concave surface C1a is provided at a position corresponding to each of the elevating pins 205 on the bottom surface of the cover ring C.

In a plan view, the size of the recess C1 of the cover ring C is larger than the transfer accuracy of the cover ring C by the transfer device 70 and larger than the size of the upper end portion of the elevating pin 205.
Further, where the upper end portion of the elevating pin 205 is formed in a hemispherical shape that gradually narrows upward as described above, the concave surface C1a forming the concave portion C1 of the cover ring C is formed on the upper end portion of the elevating pin 205. Its curvature is set to be smaller than that of the convex surface 205a forming the hemisphere.

Since the attachment process and the removal process of the cover ring C are the same as the attachment process and the removal process of the edge ring F according to the reference embodiment 1, the description thereof will be omitted.
The elevating pin 107 with respect to the edge ring F shown in FIG. 2 and the like was configured so as to be able to protrude from the upper surface 104b of the peripheral edge portion of the electrostatic chuck 104. When the edge ring F was attracted by the electrostatic force, the upper end surface of the elevating pin 107 was submerged from the upper surface 104a of the peripheral edge portion of the electrostatic chuck 104. On the other hand, the elevating pin 205 with respect to the cover ring C is not configured to be projectable from the upper surface 203a of the support 203 and is not configured to be retractable from the upper surface 203a of the support 203 if the amount of protrusion is adjustable. You may. Further, when the edge ring F is attracted by the electrostatic force, the upper end surface of the elevating pin 205 may protrude from the upper surface 203a of the support 203.

(Reference Embodiment 3)
FIG. 11 is a partially enlarged cross-sectional view showing an outline of the configuration of the wafer support base 300 as the substrate support base according to the third embodiment of the reference.
In the first embodiment of the reference, the edge ring F is a replacement target, and in the second embodiment of the reference, the cover ring C is a replacement target. However, in the embodiment of this reference, both the edge ring F and the cover ring C are to be replaced. Is to be exchanged.

In the embodiment of this reference, the edge ring F and the cover ring C are replaced separately. Therefore, the edge ring F is provided with the elevating pin 107 and the through hole 117, and the cover ring C is provided with the elevating pin 205 and the through hole 206. Further, the above-mentioned recesses F1 and C1 are formed on the bottom surface of the edge ring F and the bottom surface of the cover ring C, respectively.

Since the attachment process and removal process of the edge ring F and the attachment process and removal process of the cover ring C in the embodiment of this reference are the same as the attachment process and removal process of the edge ring F according to the first embodiment of the reference. The description will be omitted.

(The present embodiment)
In the reference embodiment 1, the edge ring F, the cover ring C in the reference embodiment 2, and both the edge ring F and the cover ring C in the reference embodiment 3 were exchange targets. On the other hand, in the present embodiment, the cover ring supporting the edge ring or the edge ring alone is the replacement target.
That is, in this embodiment, both the edge ring and the covering are used as in the reference embodiment 3. Then, the technique according to the present embodiment is integrated with the covering in a state of being supported by the covering when the edge ring is replaced in the plasma processing system in which both the edge ring and the covering are used. This is for selectively performing (replacement in a state of being) and replacement of the edge ring alone.

FIG. 12 is a plan view showing an outline of the configuration of the plasma processing system according to the present embodiment.
In the plasma processing system 1a of FIG. 12, unlike the plasma processing system 1 of FIG. 1, the decompression unit 11 replaces the transfer module 50 and the processing module 60, as well as the cover ring supporting the edge ring and the edge ring alone. It has a storage module 62 for storing at least one of the jigs to be used, which will be described later.

In the example of the figure, two storage modules 62 are provided for one transfer module 50. The cover ring supporting the edge ring is housed in at least one of the two storage modules 62, and the jig is housed in at least one of the two storage modules 62. The number and arrangement of the storage modules 62 are not limited to this embodiment, and can be arbitrarily set, and at least one storage module 62 may be provided.
The storage module 62 is connected to the transfer module 50 via a gate valve 63. The inside of the storage module 62 is also maintained in a reduced pressure atmosphere like the inside of the transfer module 50 and the processing module 60.

In the transfer module 50 of the plasma processing system 1a, the cover ring or jig supporting the edge ring stored in the storage module 62 is received by the transfer arm 71 and transferred to the processing module 60. Further, in the transfer module 50, the cover ring or jig supporting the edge ring held in the processing module 60 is received by the transfer arm 71 and transferred to the storage module 62.

Further, the plasma processing system 1a of FIG. 12 and the plasma processing system 1 of FIG. 1 differ in the configuration of the wafer support as the substrate support in the processing module 60.

FIG. 13 is a partially enlarged cross-sectional view showing an outline of the configuration of the wafer support base 400 as the substrate support base according to the present embodiment.

The wafer support 400 of FIG. 13 has a lower electrode 401, an electrostatic chuck 402, a support 403, an insulator 404, and a lifter 405.

The lower electrode 401 and the electrostatic chuck 402 are provided with an insertion hole 406 through which the lifter 405 is inserted. The insertion hole 406 is formed so as to extend downward from the upper surface 402a of the peripheral edge of the electrostatic chuck 402 and reach the bottom surface of the lower electrode 401, for example.
In the example shown in the figure, the electrostatic chuck 402 is provided with a bipolar electrode 109 for sucking and holding the edge ring Fa, but the electrode for sucking and holding the edge ring Fa is a unipolar type. You may. Further, the electrode for sucking and holding the edge ring Fa may be omitted from the electrostatic chuck 402.
Further, when the electrostatic chuck is provided with an electrode for adsorbing the edge ring Fa, the peripheral portion of the electrostatic chuck where the electrode for adsorbing the edge ring Fa is provided and the electrode 108 for adsorbing the wafer W are provided. It may be integrated with the central portion provided or may be a separate body.

The support 403 is a member formed in an annular shape in a plan view using, for example, quartz, and supports the lower electrode 401.

The upper surface 403a of the support 403 and the upper surface 402a of the peripheral edge of the electrostatic chuck 402 are mounted on the covering Ca supporting the edge ring Fa, which is one of the annular members to be replaced according to the present embodiment. It becomes an annular member mounting surface.

The insulator 404 is a cylindrical member made of ceramic or the like, and supports the support 403. The insulator 404 is formed so as to have an outer diameter equivalent to the outer diameter of the support 403, for example, and supports the peripheral edge portion of the support 403.

In the present embodiment, the covering Ca is configured to be able to support the edge ring Fa, and is formed so as to at least partially overlap the edge ring Fa in a plan view. The covering Ca supports, for example, the edge ring Fa in a substantially concentric state with the covering Ca. In one embodiment, the diameter of the innermost peripheral portion of the covering Ca is smaller than the diameter of the outermost peripheral portion of the edge ring Fa, and when the covering Ca and the edge ring Fa are arranged substantially concentrically, in a plan view. The inner peripheral portion of the covering Ca overlaps at least a part of the outer peripheral portion of the edge ring Fa. For example, in one embodiment, the edge ring Fa has a concave portion Fa1 that is concave inward in the radial direction on the outer peripheral portion of the bottom portion, and the covering Ca has a convex portion Ca1 that protrudes inward in the radial direction at the bottom portion thereof. The edge ring Fa is supported by the engagement between the convex portion Ca1 and the concave portion Fa1.

In the present embodiment, the edge ring Fa has a step formed on the upper portion thereof like the edge ring F in FIG. 2, the upper surface of the outer peripheral portion is formed higher than the upper surface of the inner peripheral portion, and the inner diameter thereof is formed. However, it is formed to be smaller than the outer diameter of the wafer W.
Further, in one embodiment, a protrusion may be provided on either one and a recess that engages with the protrusion may be provided on either one so as to suppress the misalignment between the cover ring Ca and the edge ring Fa. Specifically, as shown in FIG. 14, an annular projection Ca2 concentric with the covering Ca is formed on the upper surface of the covering Ca, and the edge ring is located on the lower surface of the edge ring Fa at a position corresponding to the annular projection Ca2. An annular recess Fa2 concentric with Fa may be formed. By engaging the annular protrusion Ca2 and the annular recess Fa2, the misalignment between the covering Ca and the edge ring Fa can be suppressed. Further, instead of the above example, an annular recess is formed on the upper surface of the covering Ca and an annular protrusion is formed on the lower surface of the edge ring Fa, and due to these engagements, the position of the covering Ca and the edge ring Fa is displaced. May be suppressed.
The edge ring Fa may be an integral body or a two-body object (that is, may be composed of a plurality of members).

The lifter 405 is a member that moves up and down so as to be able to project from a position overlapping the cover ring C in a plan view on the upper surface 402a of the peripheral edge of the electrostatic chuck 402. The lifter 405 can be raised and lowered by supporting the covering Ca that supports the edge ring Fa by raising and lowering the lifter 405 in a state of protruding from the above position. In one embodiment, the lifter 405 is a long columnar member, similar to the elevating pin 107 described above.
Further, the lifter 405 is provided so as not to hinder the raising and lowering of the jig described later by the lifting pin 106 (see FIG. 16 described later). The elevating pin 106 is an example of a lifter for the wafer W that elevates and elevates from the upper surface (that is, the substrate mounting surface) 104a of the central portion of the electrostatic chuck 402 so as to be projectable.

The lifter 405 protrudes from a position corresponding to the convex portion Ca1 of the covering Ca on the upper surface 402a of the peripheral edge portion of the electrostatic chuck 402, for example. The insertion hole 406 through which the lifter 405 is inserted is formed at a position corresponding to the convex portion Ca1 of the covering Ca. In the example shown in the figure, since the lifter 405 is a long columnar member, the insertion hole 406 penetrates the electrostatic chuck 402 and the lower electrode 401. However, depending on the shape of the lifter 405, the insertion hole 406 may not penetrate the electrostatic chuck 402 and the lower electrode 401.

Similar to the elevating pin 107 of FIG. 2, three or more lifters 405 are provided along the circumferential direction of the electrostatic chuck 402 at intervals from each other.
The elevating mechanism for raising and lowering the lifter 405 may be provided for each lifter 405, or a common elevating mechanism may be provided for a plurality of lifters 405.

Like the elevating pin 107, the lifter 405 may be formed in a hemispherical shape whose upper end portion gradually narrows upward. The upper end portion of the lifter 405 abuts on the bottom surface of the convex portion Ca1 of the covering Ca when it is raised, and supports the covering C that supports the edge ring F, for example. As shown in FIG. 15, a concave portion Ca3 formed from an upwardly concave concave surface Ca3a may be provided at a position corresponding to each of the lifters 405 on the bottom surface of the convex portion Ca1 of the cover ring C.

When the recess Ca3 is provided, the size thereof is, for example, larger than the transport accuracy of the cover ring C by the transport device 70 and larger than the size of the upper end portion of the lifter 405 in a plan view.
Further, when the upper end portion of the lifter 405 is formed in a hemispherical shape that gradually narrows upward as described above, the concave surface Ca3a forming the concave portion Ca3 forms the hemispherical shape of the upper end portion of the lifter 405. The curvature may be set smaller than that of the convex surface 405a.

Subsequently, an example of the attachment process of the covering Ca in a state of supporting the edge ring Fa, which is performed by using the plasma processing system 1a, will be described. The following processing is performed under the control of the control device 80.

First, the transfer arm 71 of the transfer module 50 in the vacuum atmosphere of the plasma processing system 1a takes out the covering Ca supporting the edge ring Fa from the storage module 62 and holds it. Next, the transport arm 71 holding the covering Ca supporting the edge ring Fa is inserted into the decompressed plasma processing chamber 100 of the processing module 60 to be attached via the carry-in outlet (not shown). NS. Then, the edge ring Fa is placed above the upper surface 402a of the peripheral edge of the electrostatic chuck 402 and the upper surface 403a of the support 403 (hereinafter, may be abbreviated as "annular member mounting surface of the wafer support base 400"). The supported covering Ca is transported by the transport arm 71.

Next, all the lifters 405 are raised, and the covering Ca supporting the edge ring Fa is delivered from the transport arm 71 to the lifter 405. Specifically, all the lifters 405 are raised, and first, the upper end portion of the lifter 405 comes into contact with the bottom surface of the covering Ca held by the transport arm 71. If the lifter 405 continues to rise even after this contact, the cover ring Ca that supports the edge ring is delivered to and supported by the lifter 405.

Then, the transfer arm 71 is extracted from the plasma processing chamber 100, that is, retracted, and then the lifter 405 is lowered, whereby the covering Ca supporting the edge ring Fa is mounted on the annular member of the wafer support base 400. It is placed on the surface.
This completes a series of processes for attaching the covering Ca that supports the edge ring Fa.

Next, an example of the removal process of the covering Ca in the state of supporting the edge ring Fa, which is performed by using the plasma processing system 1a, will be described. The following processing is performed under the control of the control device 80.

First, all the lifters 405 are raised, and the covering Ca supporting the edge ring Fa is delivered to the lifter 405 from the annular member mounting surface of the wafer support base 400. After that, the lifter 405 continues to rise, and the covering Ca supporting the edge ring Fa moves upward.

Next, the transfer arm 71 is inserted from the transfer module 50 in the vacuum atmosphere of the plasma processing system 1a into the decompressed plasma processing chamber 100 via the carry-in outlet (not shown). Then, the transfer arm 71 is moved between the annular member mounting surface of the wafer support base 400 and the covering Ca that supports the edge ring Fa.

Subsequently, the lifter 405 is lowered, and the cover ring Ca supporting the edge ring Fa is delivered from the lifter 405 to the transfer arm 71. After that, the transfer arm 71 is extracted from the plasma processing chamber 100, and the covering Ca supporting the edge ring Fa is carried out of the processing module 60. Then, the covering Ca that supports the edge ring Fa is stored in the storage module 62 by the transport arm 71.
This completes a series of steps for removing the covering Ca that supports the edge ring Fa.

Next, an example of the removal process of the edge ring Fa alone performed by using the plasma processing system 1a will be described with reference to FIGS. 16 to 21. The following processing is performed under the control of the control device 80. Further, the jig J is used in the attachment process of the edge ring Fa alone. The jig J is configured to be able to support only the edge ring Fa without supporting the covering Ca, and has, for example, a portion longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the covering Ca. It is a plate-shaped member. Specifically, the jig J is, for example, a substantially rectangular plate-shaped member having a diagonal line longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the covering Ca in a plan view, and the edge ring Fa. It may be a disk-shaped member having a diameter longer than the inner diameter and shorter than the inner diameter of the covering Ca.

In the removal process of the edge ring Fa alone, first, all the lifters 405 are raised, and the cover ring C supporting the edge ring F is the upper surface 402a of the peripheral edge of the electrostatic chuck 402 and the upper surface 403a of the support 403 ( That is, it is delivered to the lifter 405 from the annular member mounting surface of the wafer support base 400). After that, the lifter 405 continues to rise, and as shown in FIG. 16, the covering Ca supporting the edge ring Fa moves upward.

Next, the transfer arm 71 that takes out and holds the jig J from the processing module 60 through the carry-in outlet (not shown) into the depressurized plasma processing chamber 100 from the transfer module 50 in the vacuum atmosphere of the plasma processing system 1. Is inserted. Then, as shown in FIG. 17, the jig held by the transport arm 71 is held between the upper surface 402a of the peripheral edge of the electrostatic chuck 402 and the upper surface 403a of the support 403 and the covering Ca supporting the edge ring Fa. Tool J is moved.

Subsequently, the elevating pin 106, which is an example of the lifter for the wafer W, is raised, and as shown in FIG. 18, the jig J is delivered from the transfer arm 71 to the elevating pin 106.

Next, the transfer arm 71 is extracted from the plasma processing chamber 100, that is, retracted, and then the lifter 405 and the elevating pin 106 are relatively moved, and specifically, only the lifter 405 is lowered. As a result, as shown in FIG. 19, the edge ring Fa is transferred from the covering Ca to the jig J. After that, only the lifter 405 is continuously lowered, whereby the covering Ca is delivered from the lifter 405 to the annular member mounting surface.

Next, the transfer arm 71 is inserted into the plasma processing chamber 100 via a carry-in port (not shown). Then, as shown in FIG. 20, the transport arm 71 is moved between the cover ring Ca and the jig J that supports the edge ring Fa.

Subsequently, the elevating pin 106 is lowered, and as shown in FIG. 21, the jig J supporting the edge ring Fa is delivered from the elevating pin 106 to the transport arm 71.

Then, the transfer arm 71 is pulled out from the plasma processing chamber 100, and the jig J supporting the edge ring Fa is carried out from the plasma processing chamber 100. The jig J supporting the edge ring Fa is housed in the storage module 62 by the transport arm 71.
This completes the process of removing a series of edge ring Fas.

Subsequently, an example of the attachment processing of the edge ring Fa alone performed by using the plasma processing system 1a will be described. The following processing is performed under the control of the control device 80. Further, as described below, the jig J is used in the attachment process of the edge ring Fa alone as in the removal process.

First, the jig J supporting the edge ring Fa is taken out from the storage module 62 and held by the transfer arm 71 of the transfer module 50 in the vacuum atmosphere of the plasma processing system 1a. Next, the transfer arm 71 holding the jig J supporting the edge ring Fa is inserted into the decompressed plasma processing chamber 100 of the processing module 60 to be attached via the carry-in outlet (not shown). NS. Then, as shown in FIG. 22, the jig J supporting the edge ring Fa is conveyed by the transfer arm 71 above the upper surface 104a of the central portion of the electrostatic chuck 402.

Next, the elevating pin 106 is raised, and as shown in FIG. 23, the jig J supporting the edge ring Fa is delivered from the transport arm 71 to the elevating pin 106.

Subsequently, the transfer arm 71 is extracted from the plasma processing chamber 100, that is, retracted, and then the lifter 405 supporting only the covering Ca is raised, whereby the elevating pin 106 is performed as shown in FIG. 24. The edge ring Fa is delivered from the upper jig J to the covering Ca.

Next, the transfer arm 71 is reinserted into the plasma processing chamber 100 via the carry-in / carry-out port (not shown). Then, as shown in FIG. 25, the transfer arm 71 is moved between the upper surface (that is, the substrate mounting surface) 104a of the central portion of the electrostatic chuck 402 and the jig J.

Subsequently, the elevating pin 106 is lowered, and as shown in FIG. 26, the jig J that does not support the edge ring Fa is delivered from the elevating pin 106 to the transport arm 71.

Then, the transfer arm 71 is pulled out from the plasma processing chamber 100, and the jig J is carried out from the plasma processing chamber 100. The jig J is housed in the storage module 62 by the transport arm 71.

Further, the lifter 405 is lowered, and as shown in FIG. 27, the covering Ca supporting the edge ring Fa straddles the upper surface 402a of the peripheral edge portion of the electrostatic chuck 402 and the upper surface 403a of the support 403. It is placed like this.
This completes the process of removing a series of edge ring Fas.

As described above, according to the present embodiment, when the edge ring Fa is replaced in the plasma processing system 1a in which both the edge ring Fa and the covering Ca are used, the replacement in a state of being supported by the covering Ca is performed. , The edge ring alone can be replaced. Further, according to the present embodiment, the edge ring Fa can be replaced while being supported by the covering Ca, that is, the edge ring Fa and the covering Ca can be replaced at the same time. The time required for replacement can be further shortened. Further, since it is not necessary to provide a mechanism for raising and lowering the edge ring Fa, the cost can be reduced. Further, according to the present embodiment, when the cover ring Ca does not need to be replaced and only the edge ring Fa needs to be replaced, only the edge ring Fa can be replaced even if a mechanism for directly raising and lowering the edge ring Fa is not provided. Can be exchanged.

At least one of the covering Ca supporting the edge ring Fa and the jig J may be housed in a container placed on the load port 32.

The edge ring is an example of the following first annular member, and the cover ring is an example of the following second annular member. The first annular member is an annular member arranged so as to surround the substrate placed on the wafer support, and the second annular member is formed so as to overlap at least a part of the first annular member in a plan view. It is a ring-shaped member. More specifically, the second annular member is configured to be able to support the first annular member, and is formed so as to at least partially overlap the first annular member in a plan view. The second annular member supports, for example, the first annular member in a substantially concentric state with the second annular member.
In the above, the technique according to the present embodiment has been described by an example using an edge ring and a cover ring, but the technique according to the present embodiment is a plasma processing system using the first annular member and the second annular member. Can be applied.
By applying the technique according to the present embodiment to the plasma processing system using the first annular member and the second annular member, the state of being supported by the second annular member when the first annular member is replaced. And the replacement of the first annular member alone can be selectively performed.

Although various exemplary embodiments have been described above, various additions, omissions, substitutions, and changes may be made without being limited to the above-mentioned exemplary embodiments. It is also possible to combine elements in different embodiments to form other embodiments.

In addition to the above embodiments, the following additional notes will be further disclosed.
[Appendix 1]
The board mounting surface on which the board is mounted and
An annular member mounting surface on which an annular member is placed so as to surround the substrate held on the substrate mounting surface, and an annular member mounting surface.
Three or more lifting pins that are configured to project from the annular member mounting surface and that adjustably raise and lower the amount of protrusion from the annular member mounting surface.
It has an elevating mechanism that elevates and elevates the elevating pin.
A recess formed from a concave surface recessed upward is provided at a position corresponding to each of the elevating pins on the bottom surface of the annular member.
The curvature of the upper end of the lifting pin is larger than the curvature of the recess.
[Appendix 2]
The substrate support according to Appendix 1, wherein the opening of the recess is larger than the transfer error of the annular member upward on the annular member mounting surface in a plan view.
[Appendix 3]
The board support according to Appendix 1 or 2, wherein the elevating mechanism raises and lowers the elevating pins independently.

60 Processing module 60
70 Transfer device 71 Transfer arm 80 Control device 100 Plasma processing chamber 104a Top surface 106 Lifting pin 110 Lifting mechanism 114 Lifting mechanism 400 Wafer support 402a Top surface 403a Top surface 405 Lifter Ca Covering Fa Edge ring J Jig W Wafer

Claims (5)

A plasma processing apparatus having a substrate support and a processing container in which the substrate support is provided and configured to be decompressible, and performing plasma processing on the substrate on the substrate support.
A transport device having a support portion for supporting the substrate and inserting and removing the support portion into the processing container to carry the substrate in and out of the processing container.
Equipped with a control device,
The board support is
The substrate mounting surface on which the substrate is mounted and
An annular member mounting surface on which a cover ring covering the outer surface of the edge ring arranged so as to surround the substrate held on the substrate mounting surface is mounted while supporting the edge ring.
A lifter that moves up and down so as to project from a portion that overlaps the cover ring in a plan view on the annular member mounting surface.
An elevating mechanism that elevates and elevates the lifter,
Another lifter that moves up and down so that it can protrude from the substrate mounting surface,
It has another lifting mechanism for raising and lowering the other lifter.
The support portion of the transfer device is configured to be able to support the cover ring that supports the edge ring and to support a jig having a portion longer than the inner diameter of the edge ring.
The control device is
A step of raising the lifter and passing the cover ring supporting the edge ring from the annular member mounting surface to the lifter.
A step of moving the jig supported by the support portion between the substrate mounting surface and the annular member mounting surface and the cover ring supporting the edge ring.
A step of raising the other lifter and delivering the jig from the support portion to the other lifter.
After retracting the support portion, the lifter and the other lifter are relatively moved, and the edge ring is handed over from the cover ring to the jig.
A step of lowering only the lifter and passing the cover ring from the lifter to the annular member mounting surface.
After moving the support portion between the cover ring and the jig that supports the edge ring, the other lifter is lowered to move the jig that supports the edge ring to the other jig. The process of delivering the support from the lifter and
The elevating mechanism, the transport device, and the other moving mechanism so that the step of pulling out the support portion from the processing container and carrying out the jig supporting the edge ring from the processing container is executed. A plasma processing system that controls. A method of replacing the edge ring in a plasma processing system.
The plasma processing system is
A plasma processing apparatus having a substrate support and a processing container in which the substrate support is provided and configured to be decompressible, and performing plasma processing on the substrate on the substrate support.
It is provided with a transport device having a support portion for supporting the substrate, and the support portion is inserted into and removed from the processing container so that the substrate is carried in and out of the processing container.
The board support is
The substrate mounting surface on which the substrate is mounted and
An annular member mounting surface on which a cover ring covering the outer surface of the edge ring arranged so as to surround the substrate held on the substrate mounting surface is mounted while supporting the edge ring.
A lifter that moves up and down so as to project from a portion that overlaps the cover ring in a plan view on the annular member mounting surface.
It has another lifter that moves up and down so as to project from the substrate mounting surface.
Including the step of removing the edge ring
The step of removing the edge ring is
A step of raising the lifter and passing the cover ring supporting the edge ring from the annular member mounting surface to the lifter.
A step of moving a jig supported by the support portion between the substrate mounting surface and the annular member mounting surface and the cover ring that supports the edge ring.
A step of raising the other lifter and delivering the jig from the support portion to the other lifter.
After retracting the support portion, the lifter and the other lifter are relatively moved, and the edge ring is handed over from the cover ring to the jig.
A step of lowering only the lifter and passing the cover ring from the lifter to the annular member mounting surface.
After moving the support portion between the cover ring and the jig that supports the edge ring, the other lifter is lowered to move the jig that supports the edge ring to the other jig. The process of delivering the support from the lifter and
A method for exchanging an edge ring, which comprises a step of pulling out the support portion from the processing container and carrying out the jig supporting the edge ring from the processing container. Including the step of attaching the edge ring
The process of attaching the edge ring is
A step of supporting the edge ring and moving the jig supported by the support portion above the substrate mounting surface, and a step of moving the jig.
A step of raising the other lifter and transferring the jig supporting the edge ring from the support portion to the other lifter.
After retracting the support portion, the lifter that supports only the cover ring is raised, and the edge ring is handed over from the jig to the cover ring.
A step of moving the support portion between the substrate mounting surface and the jig, then lowering the other lifter, and passing the jig from the other lifter.
A step of pulling out the support portion from the processing container and carrying out the jig from the processing container.
The method for replacing an edge ring according to claim 2, further comprising a step of lowering the lifter and placing the cover ring supporting the edge ring on the annular member mounting surface. Including another step of attaching the edge ring
Another step in attaching the edge ring is
A step of transporting the cover ring that supports the edge ring, which is supported by the support portion, above the surface on which the annular member is placed.
A step of raising the lifter and passing the cover ring supporting the edge ring from the support portion to the lifter.
The edge ring according to claim 2 or 3, further comprising a step of lowering the lifter after retracting the support portion and placing the cover ring supporting the edge ring on the annular member mounting surface. How to replace. Including another step of removing the edge ring
Another step of removing the edge ring is
A step of raising the lifter and passing the cover ring supporting the edge ring from the annular member mounting surface to the lifter.
After moving the support portion between the cover ring and the annular member mounting surface, the lifter is lowered, and the cover ring supporting the edge ring is delivered from the lifter to the support portion. Process and
The method for replacing an edge ring according to any one of claims 2 to 4, further comprising a step of pulling out the support portion from the processing container and carrying out the cover ring supporting the edge ring from the processing container. ..

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