JP2021048234A - Semiconductor laser light source device - Google Patents

Abstract

To provide a semiconductor laser light source device which is sized smaller than the prior arts even including a plurality of chip-on sub-mount elements mounted therein.SOLUTION: A semiconductor laser light source device comprises: a sub-mount which includes a first conductive region and a second conductive region that is electrically insulated from the first conductive region, and in which both regions are disposed in an asymmetric positional relation; a semiconductor laser chip placed on the sub-mount; a stem block in which a plurality of chip-on sub-mount elements each including the sub-mount and the semiconductor laser chip are placed separately from each other while being electrically connected in series; and a pair of power supply pins constituted of a first power supply pin and a second power supply pin electrically connected to the pair of chip-on sub-mount elements which are positioned in both ends electrically. The first power supply pin is wire-connected to a region which is positioned closer to the second power supply pin than the semiconductor laser chip, in a region of the sub-mount closest to the first power supply pin.SELECTED DRAWING: Figure 3

Description

The present invention relates to a semiconductor laser light source device, and more particularly to a semiconductor laser light source device having a plurality of semiconductor laser chips.

Conventionally, a semiconductor laser light source device in which a plurality of elements (chip-on-submount elements, also referred to as "CoS elements") in which a semiconductor laser chip is mounted on a submount is mounted in the same package is known. (See, for example, Patent Document 1).

By the way, the continuity test of a semiconductor laser chip is usually executed after being assembled into a package, and if a defect of the chip is confirmed at that time, materials and the like are wasted. In particular, when a plurality of chip-on-submount elements are incorporated in the same package as in the configuration disclosed in Patent Document 1, if an initial failure occurs even in one element, the entire package fails in the continuity test. It becomes a good product and waste of materials is large.

For example, even if the yield of a single semiconductor laser chip is 95%, if 10 semiconductor laser chips are mounted in the same package, the probability that one defective element is included in the same package. Is about 60%. Therefore, it is preferable that the continuity test can be performed for each semiconductor laser chip.

On the other hand, before each semiconductor laser chip is fixed on the stem block, that is, in an independent state, a continuity test or the like is performed to confirm the defect. However, a pin is pressed against the laser chip to confirm the defect. If this is done, there is a problem that the laser chip is destroyed by the load at the time of pressing, or the life is shortened due to damage.

From this point of view, Patent Document 2 below describes a chip-on-submount element and a method for manufacturing the same, which can perform a continuity test for each semiconductor laser chip even after the semiconductor laser chip is fixed on the stem block. Is disclosed.

Japanese Unexamined Patent Publication No. 2013-191787 Japanese Unexamined Patent Publication No. 2018-073924

In recent years, the demand for smaller and higher-brightness semiconductor laser light source devices has been increasing from the market. As a result of diligent research by the present inventors, when trying to realize a small semiconductor laser light source device by using a plurality of chip-on-submount elements having the structure disclosed in Patent Document 2, a space for routing wires (bonding wires) is secured. We found that there was a limit to miniaturization because it was necessary to do so.

In view of the above problems, an object of the present invention is to provide a semiconductor laser light source device smaller than the conventional one while mounting a plurality of chip-on-submount elements.

The semiconductor laser light source device according to the present invention is
It has a first conductive region and a second conductive region that is electrically insulated from the first conductive region, and the first conductive region and the second conductive region are arranged in an asymmetric positional relationship. , Submount and
A semiconductor laser chip mounted on the first conductive region of the submount,
A stem block in which a plurality of chip-on-submount elements including the submount and the semiconductor laser chip are mounted so as to be separated from each other in a state of being electrically connected in series.
It has a pair of feeding pins composed of a first feeding pin and a second feeding pin, which are electrically connected to the pair of chip-on-submount elements electrically located at both ends.
The first feeding pin is the second more than the semiconductor laser chip in the submount region included in the first chip-on-submount element which is the chip-on-submount element closest to the first feeding pin. It is characterized in that it is connected to a wire in a region located on the power feeding pin side.

In order to wire-connect the adjacent chip-on-submount elements (hereinafter, abbreviated as "CoS element" as appropriate), and the CoS element and the feeding pin, a space for routing the wires is required.

According to the above configuration, the first feeding pin is a wire to the first CoS element closest to the first feeding pin on the second feeding pin side of the semiconductor laser chip mounted on the first CoS element. Be connected. Therefore, even if the first feeding pin is brought closer to the first CoS element side, the distance between the wire-connected portion on the first CoS element and the first feeding pin is secured to a certain extent, so that the wire is used. Space for handling can be secured.

As a result, the distance between the CoS element and the first feeding pin can be brought close to each other, so that the entire device can be miniaturized. Details will be described later in the section "Detailed Description of the Invention".

The CoS element adjacent to the second feeding pin side with respect to the first CoS element is located on the first feeding pin side of the submount region included in the first CoS element with respect to the semiconductor laser chip. It may be wire-connected to the region where it is located.

All the submounts mounted on the stem block are arranged in a state in which the submounts having the same shape are rotated in the same direction or by a predetermined angle on the surface of the stem block. It doesn't matter if it is.

According to the above configuration, elements generated under the same design can be used as all submounts, so that a small and high-brightness semiconductor laser can be used at a low manufacturing cost while maintaining high reliability. A light source device is realized.

In the above, the submount included in the first CoS element is arranged in a state in which the submount included in the second CoS element, which is the CoS element closest to the second feeding pin, is rotated by 180 °. It doesn't matter if it is.

The CoS element adjacent to the second feeding pin side with respect to the first CoS element is located on the second feeding pin side of the submount region included in the first CoS element with respect to the semiconductor laser chip. It may be wire-connected to the region where it is located.

According to such a configuration, the first feeding pin can be further brought closer to the first CoS element side, so that the semiconductor laser light source device can be further miniaturized.

The second feeding pin is a region located on the first feeding pin side of the semiconductor laser chip in the submount region included in the second CoS element, which is the CoS element closest to the second feeding pin. It may be connected to a wire.

According to this configuration, the first feeding pin can be brought closer to the first CoS element side and the second feeding pin can be brought closer to the second CoS element side, so that the semiconductor laser light source device can be further miniaturized. Will be done.

The first conductive region has an L-shape and has an L-shape.
The second conductive region may have a rectangular shape.

The second feeding pin is wire-connected to the first conductive region.
A current may flow from the second feeding pin toward the first feeding pin.

According to the above configuration, the first conductive region of the submount is brought into contact with the p-layer side of the semiconductor laser chip. In a semiconductor laser chip, since the light emitting layer is located closer to the p layer than the n layer, high cooling performance is realized by bringing the p layer side closer to the submount. As a result, a compact and high-brightness semiconductor laser light source device is realized while ensuring high cooling performance for the semiconductor laser chip.

The second feeding pin is a region located on the first feeding pin side of the semiconductor laser chip in the submount region included in the second CoS element, which is the CoS element closest to the second feeding pin. It may be connected to a wire.

According to the above configuration, not only the first feeding pin but also the second feeding pin can be arranged close to the CoS element. As a result, a semiconductor laser light source device that is even smaller than the conventional one is realized.

The distance between adjacent semiconductor laser chips may be substantially equal. Here, "the intervals are substantially equal" means that the difference between the maximum value and the minimum value of each interval is less than 1% with respect to the average value of each interval.

According to such a configuration, for example, in mounting an optical system such as a lens to which a laser beam emitted from each semiconductor laser chip is incident, a lens array in which a plurality of lenses are evenly arranged can be used. Such as, the optical design is facilitated.

The wire connecting the first feeding pin and the CoS element, the adjacent CoS elements, and the second feeding pin and the CoS element may have a diameter of 10 μm or more and 100 μm or less. More specifically, the wire may have a diameter of 1 mil (25.4 μm) or more and 2 mil (50.8 μm) or less.

For example, by using a wire having a diameter of 2 mil, the fusing current increases, so that the number of wires can be reduced.

The number of wires connecting the first feeding pin and the first CoS element, the number of wires connecting adjacent CoS elements, and the number of wires connecting the second feeding pin and the second CoS element are the same. It doesn't matter if it is, or it can be different.

According to the semiconductor laser light source device of the present invention, it is possible to realize a configuration smaller than the conventional one while mounting a plurality of CoS elements.

It is a perspective view which shows typically the structure of 1st Embodiment of the semiconductor laser light source apparatus of this invention. It is a part of a schematic plan view when the semiconductor laser light source device shown in FIG. 1 is viewed in the Y direction. It is a partially enlarged view of FIG. It is a top view which shows typically the structure of the chip-on-submount element (CoS element). It is a perspective view which shows typically the state of performing the test for energization on a CoS element. It is a partially enlarged view of FIG. It is a top view which shows typically the structure of the conventional semiconductor laser light source apparatus according to FIG. It is a partially enlarged view of FIG. It is a top view which shows typically the connection mode of the wire in the position near the feeding pin in the conventional semiconductor laser light source apparatus. It is a top view which shows typically the connection mode of the wire at the position near the feeding pin in the 1st Embodiment of the semiconductor laser light source apparatus of this invention. FIG. 3 is a drawing illustrating the electrical connection relationship between each CoS element and between each CoS element and a power feeding pin in the second embodiment of the semiconductor laser light source device, following FIG. FIG. 3 is a drawing illustrating the electrical connection relationship between each CoS element and between each CoS element and a power feeding pin in the third embodiment of the semiconductor laser light source device, following FIG. FIG. 3 is a drawing illustrating the electrical connection relationship between each CoS element and between each CoS element and a power feeding pin in the fourth embodiment of the semiconductor laser light source device, following FIG.

Each embodiment of the semiconductor laser light source device according to the present invention will be described with reference to the drawings. The following drawings are schematically shown, and the dimensional ratios on the drawings do not always match the actual dimensional ratios. Moreover, the dimensional ratios do not always match between the drawings.

[First Embodiment]
The first embodiment of the semiconductor laser light source device will be described with reference to the drawings.

FIG. 1 is a perspective view schematically showing the configuration of the first embodiment of the semiconductor laser light source device. In the following description, the XYZ coordinate system shown in FIG. 1 is appropriately referred to. FIG. 2 is a part of a schematic plan view of the semiconductor laser light source device 1 shown in FIG. 1 when viewed in the Y direction.

In the following description, when the positive and negative directions are distinguished when expressing the directions, they are described with positive and negative signs such as "+ X direction" and "-X direction". Further, when expressing a direction without distinguishing between positive and negative directions, it is simply described as "X direction". That is, in the present specification, when simply described as "X direction", both "+ X direction" and "-X direction" are included. The same applies to the Y direction and the Z direction.

As shown in FIGS. 1 and 2, the semiconductor laser light source device 1 of the present embodiment has a plurality of chip-on-submount elements 2 arranged along the X direction (hereinafter, appropriately abbreviated as "CoS element 2"). A stem block 12 to which each CoS element 2 is fixed, a stem base 11 to fix the stem block 12, and a pair of power feeding pins 10 fixed to the stem base 11 are provided. The CoS element 2 has a submount 3 and a semiconductor laser chip 4, and the semiconductor laser chip 4 is mounted on the surface of the submount 3.

In this specification, when each of the pair of feeding pins 10 is described separately, they are referred to as "feeding pin 10a" and "feeding pin 10b", and when they are described without distinction, they are simply "feeding pin 10a". It may be called "10".

In the present embodiment, the feeding pin 10b corresponds to the "first feeding pin", and the feeding pin 10a corresponds to the "second feeding pin". The same applies to the following third embodiment and fourth embodiment.

In the example of this embodiment, the CoS elements 2 (each semiconductor laser chip 4) are arranged side by side in the X direction on the XZ plane. Each semiconductor laser chip 4 has a light emitting region (emitter) that emits laser light in the + Z direction on a side surface on the + Z side. The laser light emitted from each semiconductor laser chip 4 in the + Z direction is taken out of the semiconductor laser light source device 1 through the window portion 14 provided in the cap 13.

In the present embodiment, as will be described later, there are places where the distances between the adjacent submounts 3 in the X direction are different, while the distances between the adjacent semiconductor laser chips 4 in the X direction are substantially the same. There is.

The cap 13 is provided for the purpose of protecting the semiconductor laser chip 4 by making the inside airtight, and is joined to the stem base 11 by a method such as resistance welding. Further, the window portion 14 is provided to take out the laser beam to the outside, and for example, the opening provided in the cap 13 is covered with a light-transmitting resin film. However, in the present invention, it is arbitrary whether or not the semiconductor laser light source device 1 includes the cap 13.

The semiconductor laser chip 4 includes a substrate and a multi-layered semiconductor layer laminated on the substrate, and emits laser light having a wavelength determined according to a constituent material of the semiconductor layer. For example, when the semiconductor layer includes an active layer made of InGaP, InGaAlP, GaAs, InGaAs, or the like, the semiconductor laser chip 4 emits so-called red light laser light having a wavelength in the 600 nm to 800 nm band. However, in the present invention, the wavelength of the laser beam emitted by the semiconductor laser light source device 1 is not limited.

By providing the electrode wiring on the surface of the submount 3, for example, an electrical connection for supplying power to the mounted semiconductor laser chip 4 is formed. Further, the submount 3 also has a function of guiding the heat generated when the semiconductor laser chip 4 emits light to the stem block 12 side. The material of the submount 3 is appropriately selected in consideration of heat dissipation, insulation, difference in linear expansion coefficient from the semiconductor laser chip 4, and the like. As an example, the sub-mount 3, AlN, Al ₂ O _3, SiC, made of a material such as CuW.

The electrical connection relationship between the submount 3 and the semiconductor laser chip 4 will be described later with reference to FIG.

The stem base 11 has a function of fixing the stem block 12 and the pair of power feeding pins 10, respectively. In the present embodiment, the stem block 12 and the cap 13 are fixed on the surface of the stem base 11, and the feeding pin 10 is inserted into a hole provided so as to penetrate in the Z direction.

When resistance welding is used to fix the stem base 11 and the cap 13, the stem base 11 can be resistance welded and is made of a material having a relatively high thermal conductivity (for example, iron or iron alloy). To. When the stem base 11 and the cap 13 are fixed with an adhesive, the stem base 11 may be made of a metal or alloy having a higher thermal conductivity than iron or an iron alloy (for example, copper or a copper alloy). I do not care.

The stem base 11 and the stem block 12 may be fixed by a metal brazing material such as silver wax, a metal eutectic solder material, a metal adhesive, or the like.

The power feeding pin 10 is provided to supply electric power supplied from a power supply unit (not shown) to each semiconductor laser chip 4 via a wire 7. The power feeding pin 10 is made of a conductive material such as an iron alloy such as Kovar. More specifically, an insulating member such as low melting point glass formed in a hollow shape (cylindrical shape) is fitted in a through hole formed so as to penetrate the stem base 11 in the Z direction. By inserting the feeding pin 10 inside, the insulation between the feeding pin 10 and the stem base 11 is ensured.

The electrical connection between the CoS elements 2 and the CoS element 2 and the feeding pin 10 in the semiconductor laser light source device 1 of the present embodiment will be described with reference to FIGS. 2 and 3. FIG. 3 is a partially enlarged view of FIG.

In the following, for convenience of explanation, in order to distinguish each CoS element 2 arranged in the X direction, as shown in FIG. 2, "CoS element 21", "CoS element 22", and "CoS element 23" It will be described with a different reference numeral. More specifically, the CoS element 2 closest to the feeding pin 10a is referred to as "CoS element 21", the CoS element 2 adjacent to the -X side of the CoS element 21 is referred to as "CoS element 22", and the feeding pin 10b The CoS element 2 closest to the above is referred to as "CoS element 23". The CoS element 23 corresponds to the "first chip-on-submount element (first CoS element)", and the CoS element 21 corresponds to the "second chip-on-submount element (second CoS element)".

Further, as shown in FIG. 3, in order to distinguish each submount 3 mounted on different CoS elements (21, 22, 23), they are referred to as submounts (31, 32, 33), respectively.

Further, as illustrated in FIG. 3, in order to distinguish each wire 7, it is defined as follows. The wire 7 that connects the power feeding pin 10a and the CoS element 21 is referred to as a "wire 70a". The wire 7 that connects different parts of the same CoS element 2 (21, 22, 23) is referred to as a “wire 71”. The wire 7 that connects the adjacent CoS elements 2 (21, 22, 23) to each other is referred to as "wire 72". The wire 7 that connects the power feeding pin 10b and the CoS element 23 is referred to as a “wire 70b”.

Each wire 7 has a diameter of 10 μm or more and 100 μm or less, preferably 1 mil (25.4 μm) or more and 2 mil (50.8 μm) or less.

Each submount 3 (31, 32, 33) is formed with a plurality of conductive regions (3P, 3N) that are insulated from each other. Further, each of these conductive regions (3P, 3N) has an asymmetrical shape in the X direction. This point will be described with reference to FIGS. 4 and 5.

FIG. 4 is a plan view schematically showing the structure of the CoS element 2. As described above, the CoS element 2 has the semiconductor laser chip 4 mounted on the submount 3. The submount 3 has a conductive region 3P and a conductive region 3N that is electrically insulated from the conductive region 3P. In the present embodiment, the conductive region 3P has an L-shaped shape, and the conductive region 3N has a rectangular shape. Then, as shown in FIG. 4, the conductive region 3P and the conductive region 3N have asymmetrical shapes with respect to the X direction.

In the present embodiment, the conductive region 3P corresponds to the "first conductive region", and the conductive region 3N corresponds to the "second conductive region".

Further, in the present embodiment, the "conductive region 3P" is electrically connected to the p-layer side surface of the semiconductor laser chip 4, and the "conductive region 3N" is electrically connected to the n-layer side surface of the semiconductor laser chip 4. Is connected.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 3P of the submount 3. Then, the surface of the semiconductor laser chip 4 opposite to the submount 3 and the surface of the conductive region 3N of the submount 3 are connected by a wire 71.

In the conductive region 3P and the conductive region 3N of the submount 3, pin regions (3Pa.3Na) for contacting test energizing pins (50N, 50P) are secured, respectively (see FIG. 5). FIG. 5 is a drawing schematically showing a state in which a test for energization is performed on the CoS element 2.

As shown in FIGS. 4 and 5, each CoS element 2 is fixed on the stem block 12 by having a pin region (3Pa.3Na) for contacting a test energizing pin (50P, 50N). Even after that, the energization test can be performed for each CoS element 2.

That is, the submounts (31, 32, 33) have a conductive region (31P, 32P, 33P) and a conductive region (31N, 32N) electrically insulated from the conductive region (31P, 32P, 33P), respectively. , 33N). The conductive regions (31P, 32P, 33P) and the conductive regions (31N, 32N, 33N) have asymmetrical shapes in the X direction.

Next, returning to FIG. 3, the electrical connection relationship between each CoS element 2 and each power feeding pin 10 will be described.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 31P of the submount 31. A surface of the semiconductor laser chip 4 opposite to the submount 31 and a part of the surface of the conductive region 31N of the submount 31 are connected by a wire 71. A part of the surface of the conductive region 31P of the submount 31 and the feeding pin 10a are connected by a wire 70a. In the conductive region 31P included in the submount 31, the portion connected to the feeding pin 10a via the wire 70a is located on the feeding pin 10a side (+ X side) of the semiconductor laser chip 4.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 32P of the submount 32. The surface of the semiconductor laser chip 4 opposite to the submount 32 and a part of the surface of the conductive region 32N of the submount 32 are connected by a wire 71. A part of the surface of the conductive region 32P and a part of the surface of the conductive region 31N of the submount 31 adjacent in the + X direction are connected by a wire 72. Of the conductive region 32P included in the submount 32, the portion connected to the conductive region 31N of the submount 31 via the wire 72 is located on the power feeding pin 10a side (+ X side) of the semiconductor laser chip 4.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 33P of the submount 33. A surface of the semiconductor laser chip 4 opposite to the submount 33 and a part of the surface of the conductive region 33N of the submount 33 are connected by a wire 71. A part of the surface of the conductive region 33P and a part of the surface of the conductive region 32N of the submount 32 adjacent in the + X direction are connected by a wire 72. A part of the surface of the conductive region 33N of the submount 33 and the feeding pin 10b are connected by a wire 70b.

Here, as shown in FIG. 3, the sub-mount 33 has a shape that is rotated by 180 ° on the XZ plane as compared with the sub-mount 31 and the sub-mount 32. That is, the conductive region 33N is located on the power feeding pin 10a side (+ X side) of the semiconductor laser chip 4. As a result, the wire 70b connecting the power feeding pin 10b and the submount 33 (conductive region 33N) is wired so as to straddle the semiconductor laser chip 4 included in the CoS element 23.

In the present embodiment, the wire 72 connecting the sub-mount 32 and the sub-mount 33 is also wired so as to straddle the semiconductor laser chip 4 included in the CoS element 23. In other words, of the conductive region 33P included in the submount 33, the portion connected to the submount 32 (conducting region 32N) via the wire 72 is on the power feeding pin 10b side (-X side) of the semiconductor laser chip 4. Is located in.

The separation distance of each semiconductor laser chip 4 in the X direction is substantially constant. On the other hand, as described above, the submount 33 is arranged in a manner rotated by 180 ° on the XZ plane as compared with the submount 31 and the submount 32. As a result, in the semiconductor laser light source device 1 of the present embodiment, the separation distance d23 between the submount 32 and the submount 33 is smaller than the separation distance d12 between the submount 31 and the submount 32.

According to the semiconductor laser light source device 1 of the present embodiment, even if the feeding pin 10b is arranged at a position close to the submount 33 in the X direction, the conductive region 33N to which the feeding pin 10b is connected is the semiconductor laser chip 4 Since it is located on the + X side of the wire 70b, a sufficient distance is secured between the power feeding pin 10b and the conductive region 33N to route the wire 70b. As a result, the separation distance d1 between the feeding pin 10b and the submount 33 in the X direction can be shortened, so that the semiconductor laser light source device 1 can be miniaturized (see FIG. 6). FIG. 6 is an enlarged view of the vicinity of the feeding pin 10b and the CoS element 23 in FIG.

Regarding this point, it will be described with reference to FIGS. 7 and 8 that the power feeding pin 10b cannot be arranged close to the submount in the conventional electrical connection method. FIG. 7 is a plan view schematically showing the configuration of the semiconductor laser light source device 100 in which each CoS element 110 (110a, 110b, 110c) and each feeding pin 10 (10a, 10b) are connected by a conventional wiring method. FIG. 8 is an enlarged view for explaining the wiring of the submount 112 mounted on the CoS element 110c closest to the power feeding pin 10b. In FIGS. 7 and 8, the parts common to those in FIGS. 1 to 6 are designated by a common reference numeral.

In the conventional semiconductor laser light source device 100, the submount 112 included in each CoS element 110 (110a, 110b, 110c) is arranged in the same shape and in the same orientation. The power supply pins 10a, the wires 120 connecting the CoS elements 110 (110a, 110b, 110c) arranged in the X direction and the power supply pins 10b are wired without crossing each other. As a result, the distance da between the CoS elements 110 becomes a substantially constant value.

As shown in FIG. 8, in the submount 112 mounted on the CoS element 110c closest to the feeding pin 10b, the semiconductor laser chip 111 is mounted on the conductive region 112P, and the -X side of the semiconductor laser chip 111. That is, the conductive region 112N located on the side closer to the feeding pin 10b is connected to the feeding pin 10b by the wire 120.

Therefore, a separation distance db necessary for routing the wire 120 for connecting the feeding pin 10b and the submount 112 is required. As described above with reference to FIG. 6, this separation distance db is larger than the separation distance d1 in the X direction between the feeding pin 10b and the submount 33 in the semiconductor laser light source device 1 in the present embodiment. .. This point will be further described with reference to FIGS. 9A and 9B.

FIG. 9A is a plan view schematically showing a region in the vicinity of the feeding pin 10b in the conventional semiconductor laser light source device 100. Further, FIG. 9B is a plan view schematically showing a region in the vicinity of the feeding pin 10b in the semiconductor laser light source device 1 of the present embodiment. Note that, unlike FIGS. 3 and 8, FIGS. 9A and 9B correspond to schematic plan views when each semiconductor laser light source device (100, 1) is viewed from the Z direction.

When the power feeding pin 10b and the submounts (110c, 23) arranged at the positions closest to the power feeding pin 10b are connected by wire, a bonding device called a capillary 20 is used. Therefore, a space for installing the capillary 20 is required between the power feeding pin 10b and each of the submounts (110c, 23). That is, a separation distance d20 for installing the capillary 20 is required between the feeding pin 10b and each of the submounts (110c, 23) in the X direction.

Here, in the case of the conventional semiconductor laser light source device 100, as described above with reference to FIG. 8, at the position of the submount 112 closer to the feeding pin 10b than the semiconductor laser chip 111 (that is, the −X side). , The semiconductor laser chip 111 and the submount 112 are connected by wire. Therefore, in the submount 112, at a position on the −X side of the semiconductor laser chip 111, a region for striking a wire for connecting the semiconductor laser chip 111 and the submount 112, that is, the distance shown in FIG. 9A. It is necessary to secure the distance dc. In other words, the capillary 20 used to route the wire 120 for connecting the power feeding pin 10b and the submount 112 is on the −X side of the surface of the submount 112 from the region where the semiconductor laser chip 111 is formed. It is necessary to install them at a distance of dc.

On the other hand, in the case of the semiconductor laser light source device 1 of the present embodiment, as described above with reference to FIG. 6, the region of the submount 33 to which the feeding pin 10b is connected is larger than the semiconductor laser chip 4 in the feeding pin 10b. This is the position on the side away from (that is, the + X side). That is, on the surface of the submount 33, the region where the wire 70b for connecting to the power feeding pin 10b is formed and the region where the wire 72 for connecting to the submount 33 is formed are the regions where the semiconductor laser chip 4 is formed. On the other side through. Therefore, when connecting the power feeding pin 10b and the submount 33 by the wire 70b, it is not necessary to consider the routing position of the wire 72 for connecting the submount 32 and the submount 33. As a result, the semiconductor laser light source device 1 of the present embodiment can reduce the separation distance between the power feeding pin 10b and the submount 33 as compared with the conventional semiconductor laser light source device 100, and the device can be miniaturized.

Further, in the semiconductor laser light source device 1 of the present embodiment, each submount (31, 32, 33) can use an element having the same design. That is, the sub-mount 31 and the sub-mount 32 may be arranged on the stem block 12 in the same orientation, and the sub-mount 33 may be arranged on the stem block 12 with the sub-mount 31 rotated by 180 °.

[Second Embodiment]
The second embodiment of the semiconductor laser light source device will be described focusing on the parts different from the first embodiment. The components common to the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. The same applies to the following embodiments.

FIG. 10 is a drawing showing the electrical connection between the CoS elements 2 of the semiconductor laser light source device 1 in the present embodiment and the electrical connection relationship between each CoS element 2 and the feeding pin 10 according to FIG.

In the semiconductor laser light source device 1 of the present embodiment, the polarity of the feeding pin 10 is reversed as compared with the first embodiment. That is, the power feeding pin 10a is connected to the conductive region 31N of the sub mount 31, and the power feeding pin 10b is connected to the conductive region 33P of the sub mount 33. More details are as follows.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 31P of the submount 31. A part of the surface of the conductive region 31N of the submount 31 and the feeding pin 10a are connected by a wire 70a. A surface of the semiconductor laser chip 4 opposite to the submount 31 and a part of the surface of the conductive region 31N of the submount 31 are connected by a wire 71. The conductive region 31N of the submount 31 is located on the side (−X side) away from the feeding pin 10a with respect to the semiconductor laser chip 4. Therefore, the wire 70a is wired so as to straddle the semiconductor laser chip 4 included in the CoS element 21.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 32P of the submount 32. A part of the surface of the conductive region 32N of the submount 32 and a part of the surface of the conductive region 31P of the submount 31 adjacent in the + X direction are connected by a wire 72. The position of the conductive region 31P of the submount 31 to which the wire 72 is connected is on the power feeding pin 10a side (+ X side) of the semiconductor laser chip 4. Therefore, the wire 72 is wired so as to straddle the semiconductor laser chip 4 included in the CoS element 21. Further, a surface of the semiconductor laser chip 4 opposite to the submount 32 and a part of the surface of the conductive region 32N of the submount 32 are connected by a wire 71.

The semiconductor laser chip 4 is mounted on a part of the surface of the conductive region 33P of the submount 33. A part of the surface of the conductive region 33N of the submount 33 and a part of the surface of the conductive region 32P of the submount 32 adjacent in the + X direction are connected by a wire 72. A part of the submount 33 on the surface of the conductive region 33P and the feeding pin 10b are connected by a wire 70b.

In the present embodiment, the feeding pin 10a corresponds to the "first feeding pin", and the feeding pin 10b corresponds to the "second feeding pin".

According to the semiconductor laser light source device 1 of the present embodiment, the separation distance between the submount 31 and the feeding pin 10a can be made smaller than the conventional one for the same reason as in the first embodiment, so that the distance between the submount 31 and the feeding pin 10a can be made smaller than that of the conventional semiconductor laser light source device 100. Can be miniaturized.

Also in the semiconductor laser light source device 1 of the present embodiment, the elements of the same design can be used for each of the submounts (31, 32, 33).

[Third Embodiment]
The third embodiment of the semiconductor laser light source device will be described focusing on the parts different from each of the above embodiments.

FIG. 11 is a drawing showing the electrical connection between the CoS elements 2 of the semiconductor laser light source device 1 in the present embodiment and the electrical connection relationship between each CoS element 2 and the feeding pin 10 according to FIG.

The semiconductor laser light source device 1 of the present embodiment is different from the first embodiment in the shape and wiring method of the submount 33. More specifically, the submount 33 has a conductive region (33P, 33N) having a shape such that the region on the + X side is wider than the region on which the semiconductor laser chip 4 is mounted.

Similar to the first embodiment, a part of the surface of the conductive region 32N of the submount 32 and a part of the surface of the conductive region 33P of the submount 33 adjacent in the −X direction are connected by the wire 72. There is. However, in the present embodiment, unlike the first embodiment, the position of the conductive region 33P of the submount 33 to which the wire 72 is connected is formed in the region located on the submount 32 side of the semiconductor laser chip 4. ..

The conductive region 33N of the submount 33 to which the feeding pin 10b is connected is formed in a region located closer to the feeding pin 10a than the semiconductor laser chip 4, and the wire 70b is the semiconductor laser chip 4 included in the CoS element 23. It is the same as the first embodiment in that it is wired so as to straddle.

According to this configuration, the submount 33 located closest to the feeding pin 10b has a wire connected to the conductive region (conductive region 33P in this embodiment) located closer to the feeding pin 10b than the semiconductor laser chip 4. Not. Therefore, the separation distance d1 between the power feeding pin 10b and the submount 33 in the X direction can be made even smaller than that of the semiconductor laser light source device 1 of the first embodiment. As a result, the scale of the entire semiconductor laser light source device 1 is reduced.

In the configuration of this embodiment as well, the polarity of the power feeding pin 10 may be reversed as in the second embodiment.

[Fourth Embodiment]
The third embodiment of the semiconductor laser light source device will be described focusing on the parts different from each of the above embodiments.

FIG. 12 is a drawing showing the electrical connection between the CoS elements 2 of the semiconductor laser light source device 1 in the present embodiment and the electrical connection relationship between each CoS element 2 and the feeding pin 10 according to FIG.

The semiconductor laser light source device 1 of the present embodiment is different from the third embodiment in the shape and wiring method of the submount 31. More specifically, the submount 31 has a conductive region (31P, 31N) having a shape such that the region on the −X side is wider than the region on which the semiconductor laser chip 4 is mounted.

In the present embodiment, unlike the third embodiment, the conductive region 31P of the submount 31 to which the feeding pin 10a is connected is formed in a region located on the feeding pin 10b side (−X side) of the semiconductor laser chip 4. Has been done. As a result, the wire 70a connecting the power feeding pin 10a and the submount 31 is wired so as to straddle the semiconductor laser chip 4 included in the CoS element 21.

According to this configuration, as in the third embodiment, the submount 33 located closest to the feeding pin 10b has a wire connected to the conductive region located closer to the feeding pin 10b than the semiconductor laser chip 4. Absent. Further, in addition to this, the submount 31 located closest to the feeding pin 10a has no wire connected to the conductive region located closer to the feeding pin 10a than the semiconductor laser chip 4. As a result, the separation distance d1 in the X direction between the power supply pin 10b and the submount 33 and the separation distance d2 in the X direction between the power supply pin 10a and the submount 31 can be considerably reduced, and the semiconductor can be considerably reduced. The scale of the entire laser light source device 1 is reduced.

In the configuration of this embodiment as well, the polarity of the power feeding pin 10 may be reversed as in the second embodiment.

[Another Embodiment]
Hereinafter, another embodiment will be described.

<1> In each of the above embodiments, the configuration in which the semiconductor laser light source device 1 includes a plurality of CoS elements 2 arranged in a row in the X direction has been described. However, the plurality of CoS elements 2 included in the semiconductor laser light source device 1 may not be arranged in one column, and may be arranged in a matrix of a plurality of rows × a plurality of columns, for example.

<2> In each of the above embodiments, it has been described that a plurality of CoS elements 2 are arranged on the same surface of the stem block 12. However, for example, when the stem block 12 is viewed from the Z direction, the stem block 12 has a stepped shape in which the positions are different with respect to the Y direction, and the plurality of CoS elements 2 are respectively on the surface of the stem block 12 having different positions in the Y direction. It may be arranged.

<3> In each of the above embodiments, a case where three CoS elements 2 are mounted on the surface of the stem block 12 has been described. However, the number of CoS elements 2 is not limited to three as long as there are a plurality of CoS elements 2. That is, the number of CoS elements 2 may be two or four or more.

<4> In each of the above embodiments, the wire 7 (70a, 70b) connecting the power feeding pin 10 and the CoS element 2, the wire 7 (71) connecting different parts in the same CoS element 2, and the adjacent CoS. The case where each of the wires 7 (72) connecting the elements 21 to each other is wired four by four is illustrated. However, the number of each wire 7 (70a, 70b, 71, 72) is not limited to four. Further, the number of wires 7 (70a, 70b, 71, 72) may be different from each other.

Since the number of wires 7 can be reduced by increasing the diameter of the wires 7, it is preferable from the viewpoint of miniaturization of the semiconductor laser light source device 1.

<5> In each of the above embodiments, the case where the stem block 12 is placed on the surface of the stem base 11 has been described. However, it is also possible that the stem base 11 is provided with a through hole penetrating in the Z direction, and the stem block 12 is arranged so as to fit into this hole. In this case, the stem block 12 is fitted so as to project in the + Z direction with respect to the stem base 11. The stem block 12 may be fitted so as to project from the stem base 11 in both the + Z direction and the −Z direction.

The inner surface of the through hole provided in the stem base 11 and the stem block 12 are fixed via a metal brazing material such as silver wax, a metal eutectic solder material, or a metal adhesive. It doesn't matter.

<6> In each of the above embodiments, it has been described that the conductive region 3P has an L-shaped shape and the conductive region 3N has a rectangular shape, but these shapes are arbitrary.

<7> In each of the above embodiments, a case where the surface of the semiconductor laser chip 4 on the side closer to the submount 3 is the p-layer side has been described as an example. However, the present invention does not exclude the case where the surface of the semiconductor laser chip 4 that is closer to the submount 3 is the n-layer side.

1: Semiconductor laser light source device 2 (21, 22, 23): Chip-on submount element (CoS element)
3 (31, 32, 33): Submount 3P, 3N: Conductive area 3Pa, 3Na: Pin area 4: Semiconductor laser chip 7 (70a, 70b, 71, 72): Wire 10 (10a, 10b): Power supply pin 11: Stem base 12: Stem block 13: Cap 14: Window part 20: Capillary 50P, 50N: Energizing pin
100: Semiconductor laser light source device 110 (110a, 110b, 110c) wired by the conventional method: CoS element 111: Semiconductor laser chip 112: Submount 120: Wire

Claims (9)

It has a first conductive region and a second conductive region that is electrically insulated from the first conductive region, and the first conductive region and the second conductive region are arranged in an asymmetric positional relationship. , Submount and
A semiconductor laser chip mounted on the first conductive region of the submount,
A stem block in which a plurality of chip-on-submount elements including the submount and the semiconductor laser chip are mounted so as to be separated from each other in a state of being electrically connected in series.
It has a pair of feeding pins composed of a first feeding pin and a second feeding pin, which are electrically connected to the pair of chip-on-submount elements electrically located at both ends.
The first feeding pin is the second feeding pin of the submount region included in the first chip-on-submount element, which is the chip-on-submount element closest to the first feeding pin, than the semiconductor laser chip. A semiconductor laser light source device characterized in that it is connected to a region located on the pin side by a wire. In all the submounts mounted on the stem block, the submounts having the same shape are arranged in the same direction or in a state of being rotated by a predetermined angle on the surface of the stem block. The semiconductor laser light source device according to claim 1, wherein the semiconductor laser light source device is characterized by the above. The submount included in the first chip-on-submount element is obtained by rotating the submount included in the second chip-on-submount element, which is the chip-on-submount element closest to the second feeding pin, by 180 °. The semiconductor laser light source device according to claim 2, wherein the semiconductor laser light source device is arranged in a state. The chip-on-submount element adjacent to the second feeding pin side with respect to the first chip-on-submount element is the semiconductor laser chip in the submount region included in the first chip-on-submount element. The semiconductor laser light source device according to claim 1, wherein the semiconductor laser light source device is connected to a region located closer to the second power feeding pin. The second feeding pin is the first feeding pin of the submount region included in the second chip-on-submount element, which is the chip-on-submount element closest to the second feeding pin, than the semiconductor laser chip. The semiconductor laser light source device according to claim 1 or 4, wherein the semiconductor laser light source device is connected to a region located on the pin side by a wire. The first conductive region has an L-shape and has an L-shape.
The semiconductor laser light source device according to any one of claims 1 to 5, wherein the second conductive region has a rectangular shape. The second feeding pin is wire-connected to the first conductive region.
The semiconductor laser light source device according to any one of claims 1 to 6, wherein a current flows from the second feeding pin toward the first feeding pin. The semiconductor laser light source device according to any one of claims 1 to 7, wherein the distance between adjacent semiconductor laser chips is substantially equal. The wire connecting the first feeding pin and the chip-on-submount element, the adjacent chip-on-submount elements, and the second feeding pin and the chip-on-submount element shall have a diameter of 10 μm or more and 100 μm or less. The semiconductor laser light source device according to any one of claims 1 to 8, wherein the semiconductor laser light source device is characterized.

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