JP2020064921A - Wafer processing method - Google Patents

Wafer processing method Download PDF

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JP2020064921A
JP2020064921A JP2018194921A JP2018194921A JP2020064921A JP 2020064921 A JP2020064921 A JP 2020064921A JP 2018194921 A JP2018194921 A JP 2018194921A JP 2018194921 A JP2018194921 A JP 2018194921A JP 2020064921 A JP2020064921 A JP 2020064921A
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wafer
sheet
substrate
processing
thermocompression bonding
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JP7317482B2 (en
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逸人 木内
Itsuto Kiuchi
逸人 木内
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2018194921A priority Critical patent/JP7317482B2/en
Priority to KR1020190119560A priority patent/KR20200042847A/en
Priority to CN201910972930.6A priority patent/CN111063631A/en
Priority to TW108136971A priority patent/TWI813791B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Dicing (AREA)

Abstract

To provide a wafer processing method which does not reduce quality of a device even when the wafer is supported by a substrate and a rear surface of the wafer is processed.SOLUTION: There is provided a wafer processing method comprising at least a wafer arranging step, a sheet thermocompression bonding step, a processing step, and a peeling step. The wafer arranging step arranges a peeling layer 16 having a smaller diameter than a wafer 10 on an upper surface of a substrate 18 having a diameter greater than or equal to the wafer 10, lays a polyolefin-based sheet or a polyester-based sheet 14 having a dimeter greater than or equal to the wafer 10 on the upper surface of the substrate 18 via the peeling layer 16, positions a surface 10a of the wafer 10 on an upper surface of the sheet 14, and arranges the wafer. The sheet thermocompression bonding step decompresses the wafer 10 arranged in the substrate 18 via the sheet 14 in a sealed environment, heats the sheet 14, and thermally compression-bonds the wafer 10 to the substrate 18 via the sheet 14 by pressing the wafer 10. The processing step processes a rear surface 10b of the wafer 10. The peeling step peels the wafer 10 from the sheet 14.SELECTED DRAWING: Figure 2

Description

本発明は、ウエーハの裏面を加工するウエーハの加工方法に関する。   The present invention relates to a wafer processing method for processing the back surface of a wafer.

ＩＣ、ＬＳＩ等の複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハは、研削装置によって裏面が研削され所定の厚みに加工された後、ダイシング装置によって個々のデバイスチップに分割され携帯電話、パソコン等の電気機器に利用される。   A wafer formed by dividing a plurality of devices such as ICs and LSIs by a dividing line into a front surface and grinding the back surface with a grinding device to a predetermined thickness and dividing the wafer into individual device chips with a dicing device Used for electric devices such as telephones and personal computers.

近年、電気機器の小型化、軽量化を図るべく、ウエーハは、５０μｍ、３０μｍと薄く加工される傾向がある。このように薄く研削されたウエーハが次の工程に搬送される際に破損しないように、ウエーハをポリエチレンテレフタレート（ＰＥＴ）、ガラス等を素材として剛性が得られる程度の厚みを持たせたサブストレートで支持してウエーハの裏面を研削する技術が本出願人によって提案されている（例えば、特許文献１を参照。）。   In recent years, wafers tend to be thinned to 50 μm and 30 μm in order to reduce the size and weight of electric devices. In order to prevent the thinly ground wafer from being damaged when it is conveyed to the next process, use a substrate made of polyethylene terephthalate (PET), glass, etc., with a thickness sufficient to obtain rigidity. A technique for supporting and grinding the back surface of the wafer has been proposed by the present applicant (for example, refer to Patent Document 1).

特開２００４−２９６８３９号公報JP 2004-296839 A

ウエーハをサブストレートによって支持する際、ウエーハとサブストレートとの合わせ面に液状樹脂、ワックス等を塗布したり、両面テープを用いて貼着したりする方法が取られている。しかし、液状樹脂、ワックス、両面テープ等によってウエーハをサブストレートで支持した場合、サブストレートによる保持力が十分とはいえず、ウエーハの裏面を研削する際にウエーハがサブストレート上で動いてしまい、研削中にウエーハが破損する、という問題がある。特に、デバイスの表面にバンプと称する突起電極が複数形成されている場合には、突起電極に研削時の応力が集中して破損するという問題がある。   When a wafer is supported by a substrate, a method of applying a liquid resin, wax or the like to the mating surface between the wafer and the substrate or sticking it with a double-sided tape is used. However, when the wafer is supported on the substrate by liquid resin, wax, double-sided tape, etc., the holding force by the substrate is not sufficient and the wafer moves on the substrate when the back surface of the wafer is ground, There is a problem that the wafer is damaged during grinding. In particular, when a plurality of bump electrodes called bumps are formed on the surface of the device, there is a problem that stress during grinding is concentrated on the bump electrodes and damage occurs.

さらに、研削が終了してウエーハの表面からサブストレートを剥離すると、液状樹脂、ワックス、両面テープの糊剤等の一部が電極に付着して残存し、ウエーハから個々に分割された後のデバイスチップの品質を低下させるという問題がある。   Further, when the substrate is peeled off from the surface of the wafer after grinding is completed, a part of the liquid resin, wax, adhesive of the double-sided tape, etc. adheres to the electrode and remains, and the device after being divided from the wafer individually There is a problem of degrading the quality of the chip.

本発明は、上記事実に鑑みなされたものであり、その主たる技術課題は、サブストレートによってウエーハを支持してウエーハの裏面を加工しても、デバイスの品質を低下させることのないウエーハの加工方法を提供することにある。   The present invention has been made in view of the above facts, and its main technical problem is to process a wafer without deteriorating the quality of the device even if the back surface of the wafer is processed by supporting the wafer by the substrate. To provide.

上記主たる技術課題を解決するため、本発明によれば、複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハの裏面を加工するウエーハの加工方法であって、ウエーハと同径以上のサブストレートの上面にウエーハよりも小径の剥離層を配設すると共に、ウエーハと同径以上のポリオレフィン系シート又はポリエステル系シートのいずれかのシートを、該剥離層を介してサブストレートの上面に敷設し、該シートの上面にウエーハの表面を位置付けて配設するウエーハ配設工程と、該シートを介して該サブストレートに配設されたウエーハを密閉環境内で減圧して該シートを加熱すると共にウエーハを押圧して該シートを介してウエーハを該サブストレートに熱圧着するシート熱圧着工程と、ウエーハの裏面に加工を施す加工工程と、ウエーハを該シートから剥離する剥離工程と、から少なくとも構成されるウエーハの加工方法が提供される。   In order to solve the main technical problem, according to the present invention, a method of processing a wafer for processing the back surface of a wafer formed on the front surface is divided into a plurality of devices by dividing lines, a wafer having the same diameter or more. A release layer having a diameter smaller than that of the wafer is arranged on the upper surface of the substrate, and either a polyolefin sheet or a polyester sheet having a diameter equal to or larger than that of the wafer is laid on the upper surface of the substrate through the release layer. Then, a wafer arranging step of arranging the surface of the wafer on the upper surface of the sheet, and heating the sheet by depressurizing the wafer arranged on the substrate through the sheet in a closed environment. A sheet thermocompression bonding step in which a wafer is pressed and the wafer is thermocompression bonded to the substrate through the sheet, and processing is performed on the back surface of the wafer. And to processing step, a peeling step of peeling the wafer from the sheet processing method of at least composed wafer is provided from the.

該剥離層は、紙、布、オブラート、ポリイミドシートの少なくともいずれかを含むことができる。また、該加工工程では、ウエーハの裏面を研削する研削加工を実施することができる。   The release layer can include at least one of paper, cloth, wafer, and polyimide sheet. Further, in the processing step, grinding processing for grinding the back surface of the wafer can be performed.

該ポリオレフィン系シートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシート、のいずれかにより構成されることが好ましい。該シート熱圧着工程において、該ポリエチレンシートが選択された場合の加熱温度は１２０〜１４０℃、該ポリプロピレンシートが選択された場合の加熱温度は１６０〜１８０℃、該ポリスチレンシートが選択された場合の加熱温度は２２０〜２４０℃であることが好ましい。   The polyolefin sheet is preferably composed of any one of a polyethylene sheet, a polypropylene sheet and a polystyrene sheet. In the sheet thermocompression bonding step, the heating temperature when the polyethylene sheet is selected is 120 to 140 ° C., the heating temperature when the polypropylene sheet is selected is 160 to 180 ° C., and the heating temperature when the polystyrene sheet is selected. The heating temperature is preferably 220 to 240 ° C.

該ポリエステル系シートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかにより構成されることが好ましい。該シート熱圧着工程において、該ポリエチレンテレフタレートシートが選択された場合の加熱温度は２５０〜２７０℃、該ポリエチレンナフタレートシートが選択された場合の加熱温度は１６０〜１８０℃であることが好ましい。   The polyester sheet is preferably composed of a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. In the sheet thermocompression bonding step, the heating temperature when the polyethylene terephthalate sheet is selected is preferably 250 to 270 ° C, and the heating temperature when the polyethylene naphthalate sheet is selected is preferably 160 to 180 ° C.

該シート熱圧着工程において、該シートがウエーハを囲繞して盛り上がるようにウエーハを押圧することが好ましい。   In the sheet thermocompression bonding step, it is preferable to press the wafer so that the sheet surrounds the wafer and rises.

本発明のウエーハの加工方法は、複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハの裏面を加工するウエーハの加工方法であって、ウエーハと同径以上のサブストレートの上面にウエーハよりも小径の剥離層を配設すると共に、ウエーハと同径以上のポリオレフィン系シート又はポリエステル系シートのいずれかのシートを、該剥離層を介してサブストレートの上面に敷設し、該シートの上面にウエーハの表面を位置付けて配設するウエーハ配設工程と、該シートを介して該サブストレートに配設されたウエーハを密閉環境内で減圧して該シートを加熱すると共にウエーハを押圧して該シートを介してウエーハを該サブストレートに熱圧着するシート熱圧着工程と、ウエーハの裏面に加工を施す加工工程と、ウエーハを該シートから剥離する剥離工程と、から少なくとも構成される。これにより、ウエーハは、サブストレートに対して十分な保持力で支持され、ウエーハの裏面に研削加工が施されてもウエーハが破損することがない。また、デバイスの表面に突起電極（バンプ）が複数形成されている場合でも、突起電極がシートによって確実に保持され、研削時の応力が分散されて破損するという問題が解消する。さらに、液状樹脂、ワックス、両面テープ等を使用せずに、シートを介して熱圧着によりウエーハをサブストレートに支持させるため、液状樹脂、ワックス、両面テープの糊剤等がデバイスに付着して残存することがなく、デバイスの品質が低下するという問題も生じない。さらに、ウエーハよりも小径の剥離層をシートとサブストレートとの間に配設していることから、サブストレートからシートを容易に剥離することができる。   The wafer processing method of the present invention is a wafer processing method of processing a back surface of a wafer formed by dividing a plurality of devices by dividing lines into a front surface, wherein the wafer is formed on an upper surface of a substrate having a diameter equal to or larger than that of the wafer. With a release layer having a smaller diameter than that of the wafer, one of a polyolefin-based sheet or a polyester-based sheet having a diameter equal to or larger than that of the wafer is laid on the upper surface of the substrate via the release layer, and the upper surface of the sheet A wafer arranging step of arranging and arranging the surface of the wafer, and depressurizing the wafer arranged on the substrate through the sheet in a closed environment to heat the sheet and press the wafer. A sheet thermocompression bonding step of thermocompressing a wafer onto the substrate through a sheet; a processing step of processing the back surface of the wafer; A peeling step of peeling from the sheet Ha, at least composed. As a result, the wafer is supported by the substrate with a sufficient holding force, and the wafer will not be damaged even if the back surface of the wafer is ground. Further, even when a plurality of bump electrodes (bumps) are formed on the surface of the device, the problem that the bump electrodes are reliably held by the sheet and the stress during grinding is dispersed and broken is solved. Furthermore, since the wafer is supported on the substrate by thermocompression bonding through the sheet without using liquid resin, wax, double-sided tape, etc., liquid resin, wax, sizing agent of double-sided tape, etc. adheres to the device and remains. There is also no problem that the quality of the device deteriorates. Further, since the release layer having a diameter smaller than that of the wafer is disposed between the sheet and the substrate, the sheet can be easily released from the substrate.

ウエーハ配設工程の実施態様を示す斜視図である。It is a perspective view showing an embodiment of a wafer arrangement process. （ａ）シート熱圧着工程を実施する熱圧着装置の側面図、（ｂ）シート熱圧着工程により形成される一体化ウエーハの断面図である。(A) A side view of a thermocompression bonding apparatus for carrying out the sheet thermocompression bonding step, and (b) a sectional view of an integrated wafer formed by the sheet thermocompression bonding step. 加工工程を実施する研削装置のチャックテーブルに一体化ウエーハを載置する態様を示す斜視図である。It is a perspective view showing a mode of mounting an integrated wafer on a chuck table of a grinding device which carries out a processing process. 研削装置を用いた研削加工の実施態様を示す斜視図である。It is a perspective view showing an embodiment of grinding processing using a grinding device. （ａ）剥離用の保持手段に一体化ウエーハを載置する態様を示す斜視図、（ｂ）ウエーハからサブストレートを剥離する剥離工程の実施態様を示す斜視図である。(A) A perspective view showing a mode of placing an integrated wafer on a holding means for peeling, and (b) a perspective view showing an embodiment of a peeling step of peeling a substrate from a wafer.

以下、本発明のウエーハの加工方法に係る実施形態について添付図面を参照して、詳細に説明する。   Hereinafter, embodiments of a wafer processing method of the present invention will be described in detail with reference to the accompanying drawings.

図１（ａ）には、複数のデバイス１１が分割予定ライン１２によって区画され表面１０ａに形成されたウエーハ１０が示されている。本実施形態において、ウエーハ１０は、その裏面１０ｂが加工される。   FIG. 1A shows a wafer 10 in which a plurality of devices 11 are partitioned by a planned dividing line 12 and are formed on a surface 10a. In the present embodiment, the back surface 10b of the wafer 10 is processed.

本実施形態のウエーハの加工方法を実行するに際し、まず、上記したウエーハ１０と、シート１４と、剥離層１６と、サブストレート１８とを用意する。シート１４は、ウエーハ１０と同径以上のシートであり、ポリオレフィン系シート、又はポリエステル系シートのうちのいずれかから選択され、本実施形態では、ポリエチレン（ＰＥ）シートが選択される。剥離層１６は、ウエーハ１０より小径の円形状のシートであり、粘着性を有しない薄膜の素材、例えば紙が選択される。サブストレート１８は、ウエーハ１０に対し同径以上の円形状をなし、例えば、ガラス板が選択される。なお、剥離層１６は、紙に限定されず、布、オブラート、ポリイミドシートから選択されてもよい。また、サブストレート１８はガラスに限定されず、後述する熱圧着工程においても熱影響を受けず軟化しない合成樹脂、例えば、ポリエチレンテレフタレート（ＰＥＴ）から形成されてもよい。   When carrying out the wafer processing method of the present embodiment, first, the wafer 10, the sheet 14, the release layer 16, and the substrate 18 described above are prepared. The sheet 14 has a diameter equal to or larger than that of the wafer 10, and is selected from either a polyolefin sheet or a polyester sheet. In this embodiment, a polyethylene (PE) sheet is selected. The release layer 16 is a circular sheet having a diameter smaller than that of the wafer 10, and a thin film material having no adhesiveness, for example, paper is selected. The substrate 18 has a circular shape with a diameter equal to or larger than that of the wafer 10. For example, a glass plate is selected. The release layer 16 is not limited to paper and may be selected from cloth, wafer, and polyimide sheet. Further, the substrate 18 is not limited to glass, and may be formed of a synthetic resin that is not affected by heat and does not soften even in the thermocompression bonding process described later, for example, polyethylene terephthalate (PET).

（ウエーハ配設工程）
ウエーハ配設工程を実施するに際し、まず、後述する熱圧着工程を実施する熱圧着装置３０（図２を参照。）の保持手段となるヒータテーブル２０のテーブル表面２２にサブストレート１８を載置する。テーブル表面２２は、平坦面であり、ヒータテーブル２０の内部には、図示しない電気ヒータと温度センサとが内蔵されている。ヒータテーブル２０の表面２２に載置されたサブストレート１８上に剥離層１６を配設する。剥離層１６を配設する際には、サブストレート１８の中心と剥離層１６の中心とを合致させることが好ましい。上記したように、サブストレート１８はウエーハ１０に対し同径以上に形成され、剥離層１６はウエーハ１０よりも小径に形成されていることから、剥離層１６の外側には、サブストレート１８が露出する状態となる。 (Wafer placement process)
In carrying out the wafer arranging step, first, the substrate 18 is placed on the table surface 22 of the heater table 20 which serves as a holding means of the thermocompression bonding apparatus 30 (see FIG. 2) for carrying out the thermocompression bonding step described later. . The table surface 22 is a flat surface, and an electric heater and a temperature sensor (not shown) are built in the heater table 20. The release layer 16 is disposed on the substrate 18 placed on the surface 22 of the heater table 20. When disposing the release layer 16, it is preferable that the center of the substrate 18 and the center of the release layer 16 are aligned with each other. As described above, since the substrate 18 is formed to have the same diameter or larger than the wafer 10 and the release layer 16 is formed to have a smaller diameter than the wafer 10, the substrate 18 is exposed to the outside of the release layer 16. Ready to go.

サブストレート１８上に剥離層１６を配設したならば、さらに、その上に、シート１４（ポリエチレンシート）を敷設する。シート１４をサブストレート１８上に敷設する際も、双方の中心を一致させる。上記したように、剥離層１６はウエーハ１０よりも小径に形成され、シート１４は、ウエーハ１０に対し同径以上の円形状で形成されている。したがって、サブストレート１８上にシート１４を敷設する際には、その中心領域に剥離層１６が介在し、シート１４の外周がサブストレート１８の外周に直接接触する状態となる。そして、シート１４の上面に、ウエーハ１０の表面１０ａを位置付けて裏面１０ｂが上方に露出するように配設する。以上により、ウエーハ配設工程が完了する。   After the release layer 16 is arranged on the substrate 18, the sheet 14 (polyethylene sheet) is further laid thereon. When the sheet 14 is laid on the substrate 18, the centers of both are aligned. As described above, the release layer 16 is formed to have a smaller diameter than the wafer 10, and the sheet 14 is formed to have a circular shape having the same diameter as or larger than that of the wafer 10. Therefore, when the sheet 14 is laid on the substrate 18, the release layer 16 is interposed in the central region thereof, and the outer periphery of the sheet 14 is in direct contact with the outer periphery of the substrate 18. Then, the front surface 10a of the wafer 10 is positioned on the upper surface of the sheet 14 so that the rear surface 10b is exposed upward. With the above, the wafer arranging step is completed.

（熱圧着工程）
上記したウエーハ配設工程が完了したならば、次いで熱圧着工程を実施する。熱圧着工程は、シート１４を介してサブストレート１８に配設されたウエーハ１０を密閉環境内で減圧してシート１４を加熱すると共にウエーハ１０を押圧してシート１４を介してウエーハ１０をサブストレート１８に熱圧着する工程である。図２を参照しながら、該シート熱圧着工程を実施する熱圧着装置３０の機能、作用について説明する。 (Thermo-compression process)
When the above wafer arranging step is completed, a thermocompression bonding step is then carried out. In the thermocompression bonding process, the wafer 10 disposed on the substrate 18 via the sheet 14 is depressurized in a sealed environment to heat the sheet 14 and press the wafer 10 to press the wafer 10 via the sheet 14 onto the substrate 10. It is a step of thermocompression bonding to 18. The function and action of the thermocompression bonding apparatus 30 for carrying out the sheet thermocompression bonding process will be described with reference to FIG.

熱圧着装置３０は、上記した電気ヒータ、及び温度センサ（いずれも図示は省略する。）を内蔵するヒータテーブル２０と、ヒータテーブル２０が載置固定される支持基台３２と、支持基台３２に形成される吸引孔３４と、ヒータテーブル２０を含む支持基台３２上の空間Ｓを密閉空間とするための密閉カバー部材３６とを備える。なお、密閉カバー部材３６は、支持基台３２の上面全体を覆う箱型部材であるが、熱圧着装置３０の側面図を示す図２（ａ）では、内部の構成を説明する都合上、密閉カバー部材３６のみ断面を示している。   The thermocompression bonding apparatus 30 includes a heater table 20 having the above-described electric heater and a temperature sensor (both not shown) built therein, a support base 32 on which the heater table 20 is mounted and fixed, and a support base 32. And a cover member 36 for making the space S on the support base 32 including the heater table 20 a closed space. The sealing cover member 36 is a box-shaped member that covers the entire upper surface of the support base 32. However, in FIG. 2A showing a side view of the thermocompression bonding apparatus 30, for the sake of explaining the internal structure, the sealing cover member 36 is sealed. Only the cover member 36 is shown in cross section.

密閉カバー３６の上壁３６ａの中央には、押圧部材３８の支持軸３８ａが貫通し、矢印Ｚで示す上下方向に進退させるための開口３６ｂが形成されている。開口３６ｂの周囲には、支持軸３８ａを上下に進退させつつ、密閉カバー部材３６の空間Ｓを外部と遮断して密閉環境とすべく、シール構造３６ｃが形成される。支持軸３８ａの下端には、押圧プレート３８ｂが配設されている。押圧プレート３８ｂは、少なくともウエーハ１０よりも大径の円盤形状に形成され、好ましくはヒータテーブル２０と同径程度の寸法で設定される。密閉カバー部材３６の下端面には、全周にわたって適宜弾性シール部材が配設されるとよい（図示は省略する。）。また、押圧部材３８の上方には、押圧部材３８を上下方向に進退させるための図示しない駆動手段が配設される。   At the center of the upper wall 36a of the hermetic cover 36, an opening 36b for allowing the support shaft 38a of the pressing member 38 to pass therethrough and advancing and retracting in the vertical direction indicated by the arrow Z is formed. A seal structure 36c is formed around the opening 36b so as to move the support shaft 38a up and down and to block the space S of the sealing cover member 36 from the outside to create a sealed environment. A pressing plate 38b is arranged at the lower end of the support shaft 38a. The pressing plate 38b is formed in a disk shape having a diameter larger than at least the wafer 10, and is preferably set to have the same diameter as the heater table 20. An elastic seal member may be appropriately provided on the lower end surface of the hermetic cover member 36 over the entire circumference (not shown). Further, above the pressing member 38, a driving means (not shown) for moving the pressing member 38 up and down is arranged.

上記したウエーハ配設工程によりウエーハ１０が載置されたヒータテーブル２０を含む支持基台３２上に、密閉カバー部材３６を下降させて、空間Ｓを密閉環境とする。このとき、押圧プレート３８ｂは、図２（ａ）に示すように、ウエーハ１０の上面に接触しない上方位置に引き上げられている。   By the above-mentioned wafer arranging step, the sealing cover member 36 is lowered onto the support base 32 including the heater table 20 on which the wafer 10 is placed, so that the space S becomes a sealed environment. At this time, the pressing plate 38b is pulled up to an upper position where it does not come into contact with the upper surface of the wafer 10, as shown in FIG.

密閉カバー部材３６の内部に形成される空間Ｓが密閉環境とされたならば、図示しない吸引手段を作動して、吸引孔３４を介して空間Ｓの空気を吸引し、ウエーハ１０を含む領域を真空に近い状態まで減圧する。これと同時に、ヒータテーブル２０に内蔵された図示しない電気ヒータ、及び温度センサを作動して、ヒータテーブル２０の上面２２の温度を制御する。具体的には、シート１４を構成するポリエチレンシートを溶融温度近傍の１２０〜１４０℃になるように加熱する。さらに、図示しない駆動手段を作動して押圧プレート３８ｂを矢印Ｚで示す方向に下降させてウエーハ１０の上面全体を均等な力で押圧する。ウエーハ１０を収容している空間Ｓは真空に近い状態まで減圧されており、ウエーハ１０、シート１４、剥離層１６、及びサブストレート１８の各合わせ面から適宜空気が吸引されて除去される。そして、シート１４は、上記したシート１４の溶融温度近傍（１２０〜１４０℃）まで加熱されることにより軟化しつつ、粘着性を発揮し、ウエーハ１０、シート１４、剥離層１６、及びサブストレート１８が、図２（ｂ）に断面図で示すような状態で熱圧着される。剥離層１６は加熱されても粘着性を発揮しない素材（紙）が選択されており、剥離層１６の配設位置は略真空状態となって、シート１４とサブストレート１８とは、外周領域で熱圧着される。なお、この際、押圧プレート３８ｂによってウエーハ１０が押圧されることにより、図２（ｂ）に示すように、ウエーハ１０の直下に配設され軟化したシート１４の外周が盛り上がり、ウエーハ１０の外周を囲繞する盛り上がり部１４ａが形成され、ウエーハ１０がより強固に固定される。このようにして熱圧着工程が完了し、ウエーハ１０、シート１４、剥離層１６、サブストレート１８が一体となった一体化ウエーハＷが形成される。   When the space S formed inside the airtight cover member 36 is made into a hermetically sealed environment, the suction means (not shown) is actuated to suck the air in the space S through the suction holes 34, and the area including the wafer 10 is removed. Depressurize to near vacuum. At the same time, an electric heater (not shown) and a temperature sensor built in the heater table 20 are operated to control the temperature of the upper surface 22 of the heater table 20. Specifically, the polyethylene sheet constituting the sheet 14 is heated to 120 to 140 ° C. near the melting temperature. Further, the driving means (not shown) is operated to lower the pressing plate 38b in the direction indicated by the arrow Z to press the entire upper surface of the wafer 10 with a uniform force. The space S accommodating the wafer 10 is depressurized to a state close to a vacuum, and air is appropriately sucked and removed from the mating surfaces of the wafer 10, the sheet 14, the release layer 16, and the substrate 18. Then, the sheet 14 exhibits adhesiveness while being softened by being heated to a temperature near the melting temperature of the sheet 14 (120 to 140 ° C.), and the wafer 10, the sheet 14, the release layer 16, and the substrate 18 are shown. However, they are thermocompression bonded in a state as shown in the sectional view of FIG. A material (paper) that does not exhibit adhesiveness when heated is selected for the peeling layer 16, the position where the peeling layer 16 is disposed is in a substantially vacuum state, and the sheet 14 and the substrate 18 are in the outer peripheral region. It is thermocompression bonded. At this time, as the wafer 10 is pressed by the pressing plate 38b, as shown in FIG. 2 (b), the outer circumference of the softened sheet 14 arranged immediately below the wafer 10 rises, and the outer circumference of the wafer 10 is raised. The surrounding raised portion 14a is formed, and the wafer 10 is more firmly fixed. In this way, the thermocompression bonding process is completed, and the integrated wafer W in which the wafer 10, the sheet 14, the release layer 16 and the substrate 18 are integrated is formed.

（加工工程）
上記した熱圧着工程が完了し、一体化ウエーハＷが形成されたならば、ウエーハ１０の裏面を加工する加工工程を実施する。本実施形態の加工工程は、裏面１０ｂを研削する研削加工を実施するものであり、図３、図４を参照しながらより具体的に説明する。 (Processing process)
After the thermocompression bonding process is completed and the integrated wafer W is formed, a processing process for processing the back surface of the wafer 10 is performed. The processing step of the present embodiment is to perform a grinding process for grinding the back surface 10b, which will be described more specifically with reference to FIGS. 3 and 4.

図３には、研削装置５０（一部のみ示している。）のチャックテーブル５２が示されており、チャックテーブル５２の上面は、通気性を有するポーラスセラミックスからなる吸着チャック５４で構成されている。この吸着チャック５４上に、一体化ウエーハＷのサブストレート１８側を下にして載置する。吸着チャック５４上に一体化ウエーハＷを載置したならば、チャックテーブル５２に接続された図示しない吸引手段を作動して、一体化ウエーハＷを吸引保持する。   FIG. 3 shows a chuck table 52 of the grinding device 50 (only part of which is shown), and the upper surface of the chuck table 52 is composed of a suction chuck 54 made of porous ceramic having air permeability. . The integrated wafer W is placed on the suction chuck 54 with the substrate 18 side facing down. After the integrated wafer W is placed on the suction chuck 54, the suction means (not shown) connected to the chuck table 52 is operated to suck and hold the integrated wafer W.

図４に示すように、研削装置５０は、チャックテーブル５２上に吸引保持されるウエーハ１０の裏面１０ｂを研削して薄化するための研削手段６０を備えている。研削手段６０は、図示しない回転駆動機構により回転させられる回転スピンドル６２と、回転スピンドル６２の下端に装着されたマウンター６４と、マウンター６４の下面に取り付けられる研削ホイール６６とを備え、研削ホイール６６の下面には複数の研削砥石６８が環状に配設されている。   As shown in FIG. 4, the grinding device 50 includes a grinding means 60 for grinding and thinning the back surface 10b of the wafer 10 suction-held on the chuck table 52. The grinding means 60 includes a rotary spindle 62 rotated by a rotary drive mechanism (not shown), a mounter 64 attached to the lower end of the rotary spindle 62, and a grinding wheel 66 attached to the lower surface of the mounter 64. A plurality of grinding wheels 68 are annularly arranged on the lower surface.

一体化ウエーハＷをチャックテーブル５２上に吸引保持したならば、研削手段６０の回転スピンドル６２を図４において矢印Ｒ１で示す方向に、例えば６０００ｒｐｍで回転させつつ、チャックテーブル５２を図４において矢印Ｒ２で示す方向に、例えば３００ｒｐｍで回転させる。そして、図示しない研削水供給手段により、研削水を一体化ウエーハＷの上面に露出されたウエーハ１０に供給しつつ、研削砥石６８をウエーハ１０の裏面１０ｂに接触させ、研削砥石６８を支持する研削ホイール６６を、例えば１μｍ／秒の研削送り速度で下方に向けて研削送りする。この際、図示しない厚み検出装置によりウエーハ１０の厚みを測定しながら研削を進めることができ、ウエーハ１０の裏面１０ｂを所定量研削し、ウエーハ１０を所定の厚さ（例えば、５０μｍ）として、研削手段６０を停止する。このようにして、ウエーハ１０の裏面１０ｂを研削する加工工程が完了する。上記したように、本実施形態では、ウエーハ１０をポリエチレンシートからなるシート１４を介して熱圧着によりサブストレート１８に支持させている。これにより十分な保持力が発揮され、ウエーハ１０の裏面１０ｂに対して研削加工を施してもウエーハ１０が動くことがないため、破損することが防止される。特に、本実施形態では、シート１４を介してウエーハ１０をサブストレート１８に熱圧着する際に、シート１４の外周にウエーハ１０を囲繞する盛り上がり部１４ａを形成しており、これによりウエーハ１０を保持する保持力をより向上させることができる。さらに、ウエーハ１０を、サブストレート１８に対し、シート１４を介して支持させていることから、デバイス１１の表面に突起電極が複数形成されている場合であっても、該突起電極がシート１４によって確実に保持され、研削時の応力が分散され突起電極が破損するという問題が解消する。   When the integrated wafer W is suction-held on the chuck table 52, the chuck table 52 is rotated by the arrow R2 in FIG. 4 while rotating the rotary spindle 62 of the grinding means 60 in the direction indicated by arrow R1 in FIG. In the direction indicated by, for example, it is rotated at 300 rpm. Then, the grinding water is supplied to the wafer 10 exposed on the upper surface of the integrated wafer W by a grinding water supply means (not shown), and the grinding wheel 68 is brought into contact with the back surface 10b of the wafer 10 to support the grinding wheel 68. The wheel 66 is ground and fed downward at a grinding feed rate of, for example, 1 μm / sec. At this time, it is possible to proceed with the grinding while measuring the thickness of the wafer 10 by a thickness detecting device (not shown), the back surface 10b of the wafer 10 is ground by a predetermined amount, and the wafer 10 is ground to a predetermined thickness (for example, 50 μm). Stop the means 60. In this way, the processing step of grinding the back surface 10b of the wafer 10 is completed. As described above, in this embodiment, the wafer 10 is supported on the substrate 18 by thermocompression bonding via the sheet 14 made of a polyethylene sheet. As a result, a sufficient holding force is exerted, and even if the back surface 10b of the wafer 10 is ground, the wafer 10 does not move, so that the wafer 10 is prevented from being damaged. In particular, in the present embodiment, when the wafer 10 is thermocompression bonded to the substrate 18 via the sheet 14, a raised portion 14a that surrounds the wafer 10 is formed on the outer periphery of the sheet 14, thereby holding the wafer 10. It is possible to further improve the holding power. Further, since the wafer 10 is supported on the substrate 18 via the sheet 14, even if a plurality of protruding electrodes are formed on the surface of the device 11, the protruding electrodes are not separated by the sheet 14. The problem that the stress is securely held and the stress during grinding is dispersed and the protruding electrode is damaged is solved.

（剥離工程）
上記したウエーハ１０の裏面１０ｂを加工する加工工程が完了したならば、研削装置５０から一体化ウエーハＷを搬出し、図５（ａ）に示す剥離工程を実施するための保持手段７０に搬送する。保持手段７０の上面は上記したチャックテーブル５２と同様に、通気性を有する吸着チャック７２によって形成されており、図示しない吸引手段が接続されている。 (Peeling process)
When the processing step of processing the back surface 10b of the wafer 10 described above is completed, the integrated wafer W is unloaded from the grinding device 50 and is transferred to the holding means 70 for performing the peeling step shown in FIG. 5A. . Similar to the chuck table 52 described above, the upper surface of the holding means 70 is formed by a suction chuck 72 having air permeability, and a suction means (not shown) is connected thereto.

保持手段７０に搬送された一体化ウエーハＷは、ウエーハ１０の裏面１０ｂ側を下にして、サブストレート１８を上方に向けて吸着チャック７２上に載置される。吸着チャック７２に一体化ウエーハＷが載置されたならば、図示しない吸引手段を作動して、一体化ウエーハＷを吸引保持する。   The integrated wafer W transported to the holding means 70 is placed on the suction chuck 72 with the substrate 18 facing upward with the back surface 10b side of the wafer 10 facing down. After the integrated wafer W is placed on the suction chuck 72, the suction means (not shown) is operated to suck and hold the integrated wafer W.

保持手段７０に一体化ウエーハＷを吸引保持したならば、図５（ｂ）に示すように、一体化ウエーハＷのうち、ウエーハ１０を吸引手段７０に残した状態で、サブストレート１８、剥離層１６、シート１４を剥離する。この際、一体化ウエーハＷを加熱するか、又は冷却することが好ましい。シート１４は、上記したように加熱することで軟化するため、粘着力があってもウエーハ１０から剥離しやすい状態となる。また、冷却することで、シート１４が硬化し粘着力が低下するため、冷却することによっても、剥離しやすい状態となる。剥離工程を実施する際に、加熱、冷却のいずれを実施すべきかについては、シート１４を構成する素材やシート１４の粘着力等を考慮して選択することができる。なお、図５（ｂ）では、一体化ウエーハＷのうち、サブストレート１８、剥離層１６、シート１４が一体となった状態で剥離される状態を示しているが、必ずしも一体的に剥離することに限定されず、まずサブストレート１８のみを剥離し、その後、剥離層１６とシート１４とを共にウエーハ１０の表面１０ａから剥離するようにしてもよい。以上により、剥離工程が完了する。   When the integrated wafer W is suction-held by the holding means 70, as shown in FIG. 5B, the substrate 18 and the peeling layer are left in the state where the wafer 10 of the integrated wafer W is left in the suction means 70. 16, the sheet 14 is peeled off. At this time, it is preferable to heat or cool the integrated wafer W. Since the sheet 14 is softened by heating as described above, the sheet 14 is in a state of being easily peeled from the wafer 10 even if it has an adhesive force. Further, by cooling, the sheet 14 is hardened and the adhesive strength is reduced, and therefore, the sheet is easily peeled off by cooling. When performing the peeling step, which of heating and cooling should be performed can be selected in consideration of the material forming the sheet 14, the adhesive force of the sheet 14, and the like. Although FIG. 5B shows a state in which the substrate 18, the peeling layer 16 and the sheet 14 of the integrated wafer W are peeled together, it is not always necessary to peel them together. However, the substrate 18 may be peeled off first, and then the peeling layer 16 and the sheet 14 may be peeled off from the surface 10 a of the wafer 10. With the above, the peeling process is completed.

本実施形態においては、液状樹脂、ワックス、両面テープ等を用いず、加熱することにより粘着力を発揮するシート１４を介してウエーハ１０をサブストレート１８に支持させている。これにより、ウエーハ１０から、シート１４を剥離しても、突起電極を構成するバンプ周辺に液状樹脂、ワックス、両面テープの糊剤等が付着して残存する問題が生じず、デバイスの品質を低下させることがない。さらに、シート１４とサブストレート１８との間に、ウエーハ１０よりも小径の剥離層１６を真空状態で介在させて外周のみ熱圧着したことから、サブストレート１８からシート１４を剥離する過程で剥離層１６の領域に空気が入り込み、熱圧着されたシート１４を容易に剥離させることができ、作業性が向上する。   In the present embodiment, the wafer 10 is supported on the substrate 18 via the sheet 14 that exerts an adhesive force by heating without using a liquid resin, wax, double-sided tape or the like. As a result, even if the sheet 14 is peeled from the wafer 10, there is no problem that liquid resin, wax, glue of double-sided tape, etc. adheres and remains around the bumps forming the protruding electrodes, and the device quality is degraded. There is nothing to do. Further, since the peeling layer 16 having a diameter smaller than that of the wafer 10 is interposed between the sheet 14 and the substrate 18 in a vacuum state and only the outer circumference is thermocompression bonded, the peeling layer is formed in the process of peeling the sheet 14 from the substrate 18. Air enters the region 16 and the thermocompression-bonded sheet 14 can be easily peeled off, and the workability is improved.

なお、上記した実施形態では、シート１４をポリエチレンシートにより構成したが、本発明はこれに限定されない。液状樹脂、両面テープ、ワックス等を使用することなくウエーハ１０をサブストレート１８に支持可能なシート１４として、ポリオレフィン系シート、ポリエステル系シートの中から適宜選択することができる。ポリオレフィン系シートとしては、上記したポリエチレンシートの他、例えば、ポリプロピレン（ＰＰ）シート、ポリスチレン（ＰＳ）シートを選択することができる。また、ポリエステル系シートとしては、例えば、ポリエチレンテレフタレート（ＰＥＴ）シート、ポリエチレンナフタレート（ＰＥＮ）シートを選択することができる。   Although the sheet 14 is made of a polyethylene sheet in the above-described embodiment, the present invention is not limited to this. The sheet 14 capable of supporting the wafer 10 on the substrate 18 without using a liquid resin, a double-sided tape, a wax or the like can be appropriately selected from a polyolefin sheet and a polyester sheet. As the polyolefin-based sheet, in addition to the above-mentioned polyethylene sheet, for example, a polypropylene (PP) sheet or a polystyrene (PS) sheet can be selected. As the polyester sheet, for example, a polyethylene terephthalate (PET) sheet or a polyethylene naphthalate (PEN) sheet can be selected.

上記した実施形態では、シート熱圧着工程においてシート１４を加熱する際の温度を、ポリエチレンシートの融点近傍の温度（１２０〜１４０℃）に設定したが、上記したように、シート１４として他のシートを選択して構成する場合は、選択したシートの素材の融点近傍の温度になるように加熱することが好ましい。例えば、シート１４をポリプロピレンシートで構成する場合は、加熱する際の温度設定を１６０〜１８０℃とし、シート１４をポリスチレンシートで構成する場合は、加熱する際の温度を２２０〜２４０℃とすることが好ましい。また、シート１４をポリエチレンテレフタレートシートで構成する場合は、加熱する際の温度を２５０〜２７０℃とし、シート１４をポリエチレンナフタレートシートで構成する場合は、加熱する際の温度を１６０〜１８０℃に設定することが好ましい。なお、上記したようにサブストレート１８を合成樹脂で構成する場合は、熱圧着時に熱影響を受けないことが要求される。よって、シート１４をポリエチレンテレフタレートシートで構成する場合は、サブストレート１８をガラスで構成することが好ましい。   In the above-described embodiment, the temperature at which the sheet 14 is heated in the sheet thermocompression bonding step is set to a temperature near the melting point of the polyethylene sheet (120 to 140 ° C.), but as described above, other sheets are used as the sheet 14. In the case of selecting and constructing, it is preferable to heat to a temperature near the melting point of the material of the selected sheet. For example, when the sheet 14 is a polypropylene sheet, the temperature setting for heating is 160 to 180 ° C., and when the sheet 14 is a polystyrene sheet, the temperature for heating is 220 to 240 ° C. Is preferred. When the sheet 14 is made of a polyethylene terephthalate sheet, the heating temperature is 250 to 270 ° C, and when the sheet 14 is a polyethylene naphthalate sheet, the heating temperature is 160 to 180 ° C. It is preferable to set. When the substrate 18 is made of synthetic resin as described above, it is required that the substrate 18 is not affected by heat during thermocompression bonding. Therefore, when the sheet 14 is made of a polyethylene terephthalate sheet, the substrate 18 is preferably made of glass.

上記した実施形態では、剥離層１６を円形状で形成したが、必ずしも円形である必要はなく、ウエーハ１０よりも小径で、シート１４とサブストレート１８とが外周領域で接着可能な形状であればその形状は特に限定されない。   Although the release layer 16 is formed in a circular shape in the above-described embodiment, the release layer 16 does not necessarily have to be circular and may have a diameter smaller than that of the wafer 10 so that the sheet 14 and the substrate 18 can be bonded to each other in the outer peripheral region. The shape is not particularly limited.

上記した実施形態では、ウエーハ１０の裏面１０ｂを加工する加工工程として、ウエーハ１０の裏面１０ｂを研削する研削加工を実施する場合について説明したが、本発明はこれに限定されず、ウエーハ１０の裏面１０ｂを研磨する研磨工程を実施するもの、ウエーハ１０の裏面１０ｂから切削ブレードにより切削加工を実施するもの、ウエーハ１０の裏面１０ｂからレーザー光線を照射するレーザー加工を実施するもの等に適用してもよい。   In the above-described embodiment, the case of performing the grinding process of grinding the back surface 10b of the wafer 10 as the processing step of processing the back surface 10b of the wafer 10 has been described, but the present invention is not limited to this and the back surface of the wafer 10 is not limited to this. It may be applied to those for carrying out a polishing step for polishing 10b, those for carrying out cutting processing from the back surface 10b of the wafer 10 with a cutting blade, those for carrying out laser processing for irradiating a laser beam from the back surface 10b of the wafer 10. .

また、上記した実施形態では、図２（ａ）に示した装置により熱圧着を実施したが、本発明はこれに限定されず、図示しない加熱手段を備えたローラ用いて、ウエーハ１０側の全面を押圧しながら、シート１４を所望の温度に加熱して、シート１４を介してウエーハ１０、及びサブストレート１８を熱圧着するシート熱圧着工程を実施することも可能である。   Further, in the above-described embodiment, the thermocompression bonding is performed by the apparatus shown in FIG. 2A, but the present invention is not limited to this, and the entire surface of the wafer 10 side is used by using a roller provided with a heating means (not shown). It is also possible to perform the sheet thermocompression bonding step of heating the sheet 14 to a desired temperature while pressing, and thermocompressing the wafer 10 and the substrate 18 via the sheet 14.

１０：ウエーハ
１１：デバイス
１２：分割予定ライン
１４：シート
１６：剥離層
１８：サブストレート
２０：ヒータテーブル
３０：熱圧着装置
３２：支持基台
３４：吸引孔
３６：密閉カバー部材
３８：押圧部材
３８ｂ：押圧プレート
５０：研削装置
５２：チャックテーブル
６０：研削手段
６６：研削ホイール
６８：研削砥石
７０：保持手段 10: Wafer 11: Device 12: Divided line 14: Sheet 16: Release layer 18: Substrate 20: Heater table 30: Thermocompression bonding device 32: Support base 34: Suction hole 36: Sealing cover member 38: Pressing member 38b : Pressing plate 50: grinding device 52: chuck table 60: grinding means 66: grinding wheel 68: grinding wheel 70: holding means

Claims (8)

複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハの裏面を加工するウエーハの加工方法であって、
ウエーハと同径以上のサブストレートの上面にウエーハよりも小径の剥離層を配設すると共に、ウエーハと同径以上のポリオレフィン系シート又はポリエステル系シートのいずれかのシートを、該剥離層を介してサブストレートの上面に敷設し、該シートの上面にウエーハの表面を位置付けて配設するウエーハ配設工程と、
該シートを介して該サブストレートに配設されたウエーハを密閉環境内で減圧して該シートを加熱すると共にウエーハを押圧して該シートを介してウエーハを該サブストレートに熱圧着するシート熱圧着工程と、
ウエーハの裏面に加工を施す加工工程と、
ウエーハを該シートから剥離する剥離工程と、
から少なくとも構成されるウエーハの加工方法。 A method of processing a wafer, wherein a plurality of devices are separated by a planned dividing line to process the back surface of the wafer formed on the front surface,
A release layer having a diameter smaller than that of the wafer is arranged on the upper surface of the substrate having the same diameter as the wafer or more, and either the polyolefin sheet or the polyester sheet having the same diameter as the wafer or more is placed through the release layer. A wafer arranging step of laying on the upper surface of the substrate and arranging the surface of the wafer with the upper surface of the sheet positioned;
Sheet thermocompression bonding in which the wafer disposed on the substrate via the sheet is depressurized in a sealed environment to heat the sheet and press the wafer to thermocompress the wafer on the substrate via the sheet. Process,
A processing step to process the back surface of the wafer,
A peeling step of peeling the wafer from the sheet,
A method of processing a wafer that is composed of at least. 該剥離層は、紙、布、オブラート、ポリイミドシートの少なくともいずれかを含む請求項１に記載のウエーハの加工方法。   The wafer processing method according to claim 1, wherein the release layer includes at least one of paper, cloth, wafer, and polyimide sheet. 該加工工程において、ウエーハの裏面を研削する研削加工を実施する請求項１又は２に記載のウエーハの加工方法。   The method for processing a wafer according to claim 1, wherein in the processing step, a grinding process for grinding the back surface of the wafer is performed. ポリオレフィン系シートは、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシート、のいずれかにより構成される請求項１乃至３のいずれかに記載のウエーハの加工方法。   The method for processing a wafer according to claim 1, wherein the polyolefin-based sheet is composed of any one of a polyethylene sheet, a polypropylene sheet, and a polystyrene sheet. 該シート熱圧着工程において、該ポリエチレンシートの加熱温度は１２０〜１４０℃であり、該ポリプロピレンシートの加熱温度は１６０〜１８０℃であり、該ポリスチレンシートの加熱温度は２２０〜２４０℃である請求項４に記載のウエーハの加工方法。   In the sheet thermocompression bonding step, the heating temperature of the polyethylene sheet is 120 to 140 ° C, the heating temperature of the polypropylene sheet is 160 to 180 ° C, and the heating temperature of the polystyrene sheet is 220 to 240 ° C. 4. The method for processing a wafer according to 4. 該ポリエステル系シートは、ポリエチレンテレフタレートシート、ポリエチレンナフタレートシートのいずれかにより構成される請求項１乃至３のいずれかに記載のウエーハの加工方法。   The wafer processing method according to any one of claims 1 to 3, wherein the polyester-based sheet is composed of either a polyethylene terephthalate sheet or a polyethylene naphthalate sheet. 該シート熱圧着工程において、該ポリエチレンテレフタレートシートの加熱温度は２５０〜２７０℃であり、該ポリエチレンナフタレートシートの加熱温度は１６０〜１８０℃である請求項６に記載のウエーハの加工方法。   The method for processing a wafer according to claim 6, wherein in the sheet thermocompression bonding step, the heating temperature of the polyethylene terephthalate sheet is 250 to 270 ° C, and the heating temperature of the polyethylene naphthalate sheet is 160 to 180 ° C. 該シート熱圧着工程において、該シートがウエーハを囲繞して盛り上がるようにウエーハを押圧する請求項１乃至７に記載のウエーハの加工方法。   8. The method for processing a wafer according to claim 1, wherein in the sheet thermocompression bonding step, the wafer is pressed so that the sheet surrounds the wafer and rises.
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