JP2018146294A - Terahertz wave detection device - Google Patents
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Abstract
Description
本発明は、テラヘルツ波検出装置に関する。 The present invention relates to a terahertz wave detection device.
従来、テラヘルツ波検出装置としては、光吸収部と温度検出部を有するボロメータ型テラヘルツ波検出素子が広く用いられている。また、最近は、ボロメータ型テラヘルツ波検出素子を縦横に整列配置したものが提案・作製されている（例えば、特許文献１参照）。 Conventionally, as a terahertz wave detection device, a bolometer type terahertz wave detection element having a light absorption part and a temperature detection part has been widely used. Recently, a bolometer type terahertz wave detecting element arranged in a vertical and horizontal direction has been proposed and manufactured (for example, see Patent Document 1).
しかしながら、上述のボロメータ型テラヘルツ波検出装置では、入射電磁波（テラヘルツ波）を一旦熱に変換し、温度上昇による物理量の変化を信号として読み出すため、原理的に室温動作が可能で広い範囲の周波数に対応することができる利点があるものの、動作速度が遅いことが指摘されている。このため、動作速度の速い検出装置が求められている。 However, in the above-described bolometer-type terahertz wave detection device, incident electromagnetic waves (terahertz waves) are once converted into heat, and changes in physical quantities due to temperature rise are read out as signals, so that in principle, room temperature operation is possible and a wide range of frequencies is achieved. Although there is an advantage that can be accommodated, it has been pointed out that the operation speed is slow. For this reason, a detection device with a high operating speed is required.
本発明のテラヘルツ波検出装置は、動作速度の速いテラヘルツ波検出装置を提供することを主目的とする。 The main object of the terahertz wave detection device of the present invention is to provide a terahertz wave detection device having a high operating speed.
本発明のテラヘルツ波検出装置は、上述の主目的を達成するために以下の手段を採った。 The terahertz wave detection device of the present invention employs the following means in order to achieve the main object described above.
本発明のテラヘルツ波検出装置は、
テラヘルツ波を検出するテラヘルツ波検出装置であって、
テラヘルツ波の照射により温度が上昇するテラヘルツ波吸収部を中央に有する両持ち梁構造のテラヘルツ波受信素子と、
周波数変調検出法に基づいて前記テラヘルツ波受信素子の共振周波数のシフトによるテラヘルツ波の受信を検出する検出部と、
を備えることを要旨とする。
The terahertz wave detection device of the present invention is
A terahertz wave detection device for detecting terahertz waves,
A terahertz wave receiving element having a terahertz wave absorbing portion having a terahertz wave absorbing portion in the center, the temperature of which rises by irradiation with terahertz waves,
A detection unit for detecting reception of a terahertz wave due to a shift of a resonance frequency of the terahertz wave receiving element based on a frequency modulation detection method;
It is a summary to provide.
この本発明のテラヘルツ波検出装置では、テラヘルツ波の照射により温度が上昇するテラヘルツ波吸収部を中央に有する両持ち梁構造のテラヘルツ波受信素子を用いる。テラヘルツ波吸収部にテラヘルツ波が照射されるとテラヘルツ波受信素子の梁部の温度が上昇し、梁部が熱膨張することにより梁内部に応力が作用し、両持ち梁構造における共振周波数が変化する。検出部では、この共振周波数の変化（シフト）を周波数変調検出（ＦＭ検出）に基づいて検出することにより、テラヘルツ波の受信を検出する。梁の駆動周波数を固定し、振幅変化を読み出す方式（スロープ検出）の感度は、梁の振動振幅の変化に伴い梁部に蓄えられているエネルギーの変化を伴うため、高いＱ値の影響を受けて動作速度は遅くなる。一方、梁の振幅を一定に保ったまま、周波数シフトを直接読み出す方式（周波数変調検出：ＦＭ検出）の感度は、梁部に溜まる振動エネルギーの変化を伴わないため、原理的には素子の熱的な時定数までの動作が可能となり、スロープ検出に比して高速に動作することができる。この結果、動作速度の速いテラヘルツ波検出装置とすることができる。 In the terahertz wave detecting device according to the present invention, a terahertz wave receiving element having a doubly-supported beam structure having a terahertz wave absorbing portion whose temperature rises by irradiation with terahertz waves in the center is used. When the terahertz wave absorber is irradiated with the terahertz wave, the temperature of the beam part of the terahertz wave receiving element rises, and the beam part thermally expands, causing stress inside the beam and changing the resonance frequency in the double-supported beam structure. To do. The detection unit detects reception of the terahertz wave by detecting the change (shift) of the resonance frequency based on frequency modulation detection (FM detection). The sensitivity of the method (slope detection), in which the drive frequency of the beam is fixed and the amplitude change is read out, is accompanied by a change in the energy stored in the beam part as the vibration amplitude of the beam changes. The operation speed becomes slower. On the other hand, the sensitivity of the method of directly reading the frequency shift (frequency modulation detection: FM detection) while keeping the beam amplitude constant does not involve a change in vibration energy accumulated in the beam portion. It is possible to operate up to a specific time constant and to operate at a higher speed than the slope detection. As a result, a terahertz wave detecting device having a high operating speed can be obtained.
本発明のテラヘルツ波検出装置において、前記テラヘルツ波受信素子は、半導体集積回路作製技術を用いて形成される微小電子機械構造として構成されており、前記検出部は、位相同期回路を用いて前記テラヘルツ波受信素子の共振周波数を検出するものとしてもよい。こうすれば、極めて微小な装置とすることができる。この場合、前記テラヘルツ波受信素子をＮ行Ｍ列に配列したテラヘルツ波受信素子アレイを有するものとしてもよい。こうすれば、テラヘルツ波によるイメージ検出を行なうことができる。ここで、Ｎ，Ｍは１以上の整数である。 In the terahertz wave detection device of the present invention, the terahertz wave receiving element is configured as a microelectromechanical structure formed using a semiconductor integrated circuit fabrication technique, and the detection unit uses the phase locked loop circuit to generate the terahertz wave. The resonance frequency of the wave receiving element may be detected. In this way, a very small device can be obtained. In this case, a terahertz wave receiving element array in which the terahertz wave receiving elements are arranged in N rows and M columns may be provided. In this way, image detection using terahertz waves can be performed. Here, N and M are integers of 1 or more.
次に、本発明を実施するための形態を実施例を用いて説明する。 Next, the form for implementing this invention is demonstrated using an Example.
図１は、本発明の一実施例としてのテラヘルツ波検出装置２０の構成の概略を示す構成図である。実施例のテラヘルツ波検出装置２０は、微小電子機械構造として構成された両持ち梁構造のテラヘルツ波受信素子３０と、テラヘルツ波受信素子３０を付与する振動の周波数を調整する位相同期回路４０と、テラヘルツ波受信素子３０の検出信号にゲインを乗じて位相同期回路４０に入力する信号増幅器３９と、を備える。 FIG. 1 is a configuration diagram showing an outline of a configuration of a terahertz wave detection device 20 as an embodiment of the present invention. The terahertz wave detection device 20 according to the embodiment includes a terahertz wave receiving element 30 having a doubly-supported beam structure configured as a microelectromechanical structure, a phase synchronization circuit 40 that adjusts the frequency of vibration applied to the terahertz wave receiving element 30, and And a signal amplifier 39 that multiplies the detection signal of the terahertz wave receiving element 30 by a gain and inputs the result to the phase locked loop circuit 40.
図２はテラヘルツ波受信素子３０を上方からみた平面図であり、図３は図２のテラヘルツ波受信素子３０のＡ−Ａ断面の断面図である。テラヘルツ波受信素子３０は、ＧａＡｓの基板部３１ａにＧａＡｓの薄膜３１ｂを積層した基板３１と、基板３１に立脚する二脚のＡｌ0.7Ｇａ0.3Ａｓによる犠牲層３２と、２脚の犠牲層３２の上に形成されたＧａＡｓの第１梁層３３ａとＧａＡｓ／Ａｌ0.3Ｇａ0.7Ａｓの第２梁層３３ｂとＧａＡｓの第３梁層３３ｃとを積層してなる梁部３３と、梁部３３の第３梁層３３ｃの上層に形成された二次元電子伝導層３４と、梁部３３の中央に薄膜として形成されてテラヘルツ波の照射により温度上昇するＮｉＣｒのテラヘルツ波吸収部３５と、梁部３３の両端部の上に形成されたＡｌ0.3Ｇａ0.7Ａｓの第１メサ層３６ａとｎ形のＡｌ0.3Ｇａ0.7Ａｓの第２メサ層３６ｂとＧａＡｓの第３メサ層３６ｃとを積層してなる２つのメサ構造３６と、メサ構造３６の上に隔離して蒸着された２対の電極３７ａ，３７ｂと、を備える。メサ構造３６を構成する半導体は圧電効果を奏するから、テラヘルツ波受信素子３０の一方の電極３７ａ，３７ｂに交番する駆動信号を入力することにより梁部３３を振動させることができ、この梁部３３の振動に応じた電圧を他方の電極３７ａ，３７ｂから電気信号として検出することができる。実施例では、テラヘルツ波受信素子３０は、長手方向の長さが１２０μｍ、幅が４０μｍであり、基板３１の薄膜３１ｂの厚みが２００ｎｍ、二脚の犠牲層３２の厚みが３μｍ、梁部３３の第１梁層３３ａ，第２梁層３３ｂ，第３梁層３３ｃの厚みがそれぞれ１００ｎｍ，１０ｎｍ＋１０ｎｍ（ＧａＡｓが１０ｎｍでＡｌ0.3Ｇａ0.7Ａｓが１０ｎｍ），１μｍ、メサ構造３６の第１メサ層３６ａ，第２メサ層３６ｂ，第３メサ層３６ｃの厚みがそれぞれ２０ｎｍ，５５ｎｍ，１０ｎｍとなるように作製した。なお、実施例では、テラヘルツ波受信素子３０の梁部３３をＧａＡｓの第１梁層３３ａとＧａＡｓ／Ａｌ0.3Ｇａ0.7Ａｓの第２梁層３３ｂとＧａＡｓの第３梁層３３ｃとを積層することにより構成したが、ＧａＡｓのみで構成するものとしてもよい。 2 is a plan view of the terahertz wave receiving element 30 as viewed from above, and FIG. 3 is a cross-sectional view taken along the line AA of the terahertz wave receiving element 30 in FIG. The terahertz wave receiving element 30 includes a substrate 31 in which a GaAs thin film 31 b is stacked on a GaAs substrate portion 31 a, a sacrificial layer 32 made of Al 0.7 Ga 0.3 As standing on the substrate 31, and a biped sacrificial layer 32. A first beam layer 33 a made of GaAs, a second beam layer 33 b made of GaAs / Al 0.3 Ga 0.7 As, and a third beam layer 33 c made of GaAs are laminated, and A three-dimensional electron conduction layer 34 formed on the upper layer of the three-beam layer 33c; a NiCr terahertz wave absorbing portion 35 that is formed as a thin film at the center of the beam portion 33 and rises in temperature when irradiated with terahertz waves; Two layers formed by laminating an Al 0.3 Ga 0.7 As first mesa layer 36a formed on both ends, an n-type Al 0.3 Ga 0.7 As second mesa layer 36b, and a GaAs third mesa layer 36c. A mesa structure 36; And two pairs of electrodes 37a and 37b deposited on the mesa structure 36 in isolation. Since the semiconductor constituting the mesa structure 36 has a piezoelectric effect, the beam 33 can be vibrated by inputting an alternating drive signal to one of the electrodes 37 a and 37 b of the terahertz wave receiving element 30. Can be detected as an electrical signal from the other electrodes 37a and 37b. In the embodiment, the terahertz wave receiving element 30 has a longitudinal length of 120 μm and a width of 40 μm, the thin film 31b of the substrate 31 has a thickness of 200 nm, the biped sacrificial layer 32 has a thickness of 3 μm, and the beam 33 has The thicknesses of the first beam layer 33a, the second beam layer 33b, and the third beam layer 33c are 100 nm, 10 nm + 10 nm (GaAs is 10 nm and Al 0.3 Ga 0.7 As is 10 nm), 1 μm, the first mesa layer 36a of the mesa structure 36, The second mesa layer 36b and the third mesa layer 36c were fabricated to have thicknesses of 20 nm, 55 nm, and 10 nm, respectively. In the embodiment, the beam portion 33 of the terahertz wave receiving element 30 is formed by laminating a first beam layer 33a of GaAs, a second beam layer 33b of GaAs / Al 0.3 Ga 0.7 As, and a third beam layer 33c of GaAs. However, it may be composed only of GaAs.
テラヘルツ波受信素子３０は、半導体集積回路作製技術を用いて形成される。例えば、図４に示すように、基板部３１ａと薄膜３１ｂとからなる基板３１に、犠牲層３２と梁部３３と二次元電子伝導層３４とメサ構造３６とを積層したウエハを作製し（図４（ａ））、エッチングなどにより２つのメサ構造３６を形成する（図４（ｂ））。続いて、ＮｉＣｒの蒸着によりテラヘルツ波吸収部３５を形成すると共にＡｕの蒸着により２つのメサ構造３６の各々に一対（全体として２対）の電極３７ａ，３７ｂを形成する（図４（ｃ））。そして、エッチングなどにより２脚の犠牲層３２により梁部３３が支持されるように形成してテラヘルツ波受信素子３０を完成する（図４（ｄ））。 The terahertz wave receiving element 30 is formed using a semiconductor integrated circuit manufacturing technique. For example, as shown in FIG. 4, a wafer in which a sacrificial layer 32, a beam portion 33, a two-dimensional electron conductive layer 34, and a mesa structure 36 are stacked on a substrate 31 composed of a substrate portion 31a and a thin film 31b is manufactured (FIG. 4). 4 (a)), two mesa structures 36 are formed by etching or the like (FIG. 4B). Subsequently, a terahertz wave absorbing portion 35 is formed by vapor deposition of NiCr, and a pair (two pairs as a whole) of electrodes 37a and 37b are formed on each of the two mesa structures 36 by vapor deposition of Au (FIG. 4C). . Then, the terahertz wave receiving element 30 is completed by forming the beam portion 33 to be supported by the two sacrificial layers 32 by etching or the like (FIG. 4D).
位相同期回路４０は、図１に示すように、周知の位相同期回路として構成されており、テラヘルツ波受信素子３０の一方の電極３７ａ，３７ｂにより検出された信号増幅器３９によりゲインが乗じられた検出信号を入力して基準信号との位相を比較する位相比較器４２と、位相比較器４２からの信号の高周波を遮断するローパスフィルタ４４と、ローパスフィルタ４４からの信号が打ち消される方向に周波数を変更して振動信号を出力する電圧制御発振器４６と、を備える。電圧制御発振器４６からの振動信号は、テラヘルツ波受信素子３０の他方の電極３７ａ，３７ｂに駆動信号として入力されると共に基準信号として位相比較器４２に入力される。したがって、電圧制御発振器４６からの振動信号は、テラヘルツ波受信素子３０の梁部３３の共振周波数の信号となる。 As shown in FIG. 1, the phase synchronization circuit 40 is configured as a known phase synchronization circuit, and is detected by a gain multiplied by a signal amplifier 39 detected by one of the electrodes 37 a and 37 b of the terahertz wave receiving element 30. A phase comparator 42 that inputs a signal and compares the phase with a reference signal, a low-pass filter 44 that cuts off the high frequency of the signal from the phase comparator 42, and a frequency that is changed in a direction in which the signal from the low-pass filter 44 is canceled. And a voltage controlled oscillator 46 that outputs a vibration signal. The vibration signal from the voltage controlled oscillator 46 is input to the other electrodes 37a and 37b of the terahertz wave receiving element 30 as a drive signal and also input to the phase comparator 42 as a reference signal. Therefore, the vibration signal from the voltage controlled oscillator 46 becomes a signal having a resonance frequency of the beam portion 33 of the terahertz wave receiving element 30.
次に、こうして構成されたテラヘルツ波検出装置２０の動作について説明する。テラヘルツ波が照射されていない状態では、室温による梁部３３の共振周波数となる振動信号が電圧制御発振器４６から出力される。テラヘルツ波をテラヘルツ波吸収部３５に照射すると、テラヘルツ波吸収部３５の温度が上昇し、梁部３３に応力が作用し、梁部３３の共振周波数が変化する。梁部３３のヤング率をＥ、密度をρ、モードに応じた定数をμn、梁の長さをＬ、梁の厚みをｔとすると、両持ち梁構造の固有振動数ω0は次式（１）により表わされる。梁の長手方向の応力をσとすると、応力σが作用したときの両持ち梁構造の固有振動数ω0（σ）は、応力が作用していないときの固有振動数ω0（０）とすると式（２）により表わされる。 Next, the operation of the terahertz wave detection device 20 configured as described above will be described. In a state where the terahertz wave is not irradiated, a vibration signal having a resonance frequency of the beam portion 33 at room temperature is output from the voltage controlled oscillator 46. When the terahertz wave absorbing portion 35 is irradiated with the terahertz wave, the temperature of the terahertz wave absorbing portion 35 rises, stress acts on the beam portion 33, and the resonance frequency of the beam portion 33 changes. When the Young's modulus of the beam 33 is E, the density is ρ, the constant according to the mode is μ n , the length of the beam is L, and the thickness of the beam is t, the natural frequency ω 0 of the double-supported beam structure is It is represented by (1). When the stress in the longitudinal direction of the beam is σ, the natural frequency ω 0 (σ) of the double-supported beam structure when the stress σ is applied is the natural frequency ω 0 (0) when the stress is not applied. Then, it is represented by Formula (2).
梁部３３の共振周波数が変化すると、位相同期回路４０は、変化した共振周波数の振動信号が電圧制御発振器４６から出力されるように調整するから、電圧制御発振器４６からの振動信号により共振周波数を得ることができ、共振周波数のシフトによりテラヘルツ波の照射を検出することができる。ここで、テラヘルツ波の入射による周波数シフトの感度Ｒは、入射するテラヘルツ波のパワーをＰ0、電磁波（テラヘルツ波）の吸収効率をη、梁部３３の材料の熱伝導率をκ、梁の幅をＷ、梁の熱膨張係数をαT、周波数のシフト量をΔωnとすると、次式（３）により表わされる。一方、テラヘルツ波の入射による固定周波数の振幅変化の感度ＲAは、振動の振幅をＡn、振幅の変化量をΔＡn、共振のＱ値をＱとすると、式（４）により表わされる。 When the resonance frequency of the beam portion 33 changes, the phase synchronization circuit 40 adjusts so that the vibration signal with the changed resonance frequency is output from the voltage controlled oscillator 46. Therefore, the resonance frequency is adjusted by the vibration signal from the voltage controlled oscillator 46. Terahertz wave irradiation can be detected by shifting the resonance frequency. Here, the sensitivity R of the frequency shift due to the incidence of the terahertz wave is that the power of the incident terahertz wave is P 0 , the absorption efficiency of the electromagnetic wave (terahertz wave) is η, the thermal conductivity of the material of the beam portion 33 is κ, When the width is W, the thermal expansion coefficient of the beam is α T , and the frequency shift amount is Δω n , it is expressed by the following equation (3). On the other hand, the sensitivity R A of the fixed frequency amplitude change due to the incidence of the terahertz wave is expressed by Equation (4), where A n is the vibration amplitude, ΔA n is the amplitude change amount, and Q is the resonance Q value.
式（３）に示すように、テラヘルツ波の入射による周波数シフトの感度Ｒは、電磁波の吸収効率ηに依存するものの、共振のＱ値に制限されない。このため、実施例のテラヘルツ波検出装置２０は、固定周波数の振幅変化によりテラヘルツ波の照射を検出する場合に比して、高速に動作することができる。以下にこの点について説明する。図５は、テラヘルツ波の照射の有無におけるテラヘルツ波受信素子３０の振動の周波数と検出電圧Ｖｏとの関係を示す説明図である。図中、Δｆはテラヘルツ波の照射の有無による共振周波数のシフト量を示し、ΔＶｏはテラヘルツ波の照射の有無による固定周波数ｆにおける振幅の変化量である。図６は、テラヘルツ波受信素子３０に対してテラヘルツ波の照射による加熱の周波数を変化させたときの周波数変調検出法（ＦＭ検出法）に基づくテラヘルツ波受信素子３０の共振周波数のシフトによる検出波形を示す説明図であり、図７は、テラヘルツ波受信素子３０に対してテラヘルツ波の照射による加熱の周波数を変化させたときのテラヘルツ波受信素子３０の固定周波数ｆにおける振幅の変化による検出波形を示す説明図である。図７に示すように、振幅の変化による検出波形では、１０Ｈｚ〜１６０Ｈｚまでのテラヘルツ波の照射による加熱の周波数に対しては明確にテラヘルツ波の照射による加熱の周期を識別することができるが、３２０Ｈｚのテラヘルツ波の照射による加熱の周波数ではテラヘルツ波の照射による加熱の周期の識別は困難となる。したがって、振幅の変化による検出では、バンド幅は１００Ｈｚ程度となる。一方、図６に示すように、ＦＭ検出法に基づく共振周波数のシフトによる検出波形では、１０Ｈｚ〜５．１２ｋＨｚまでのテラヘルツ波の照射による加熱の周波数に対しては明確にテラヘルツ波の照射による加熱の周期を識別することができる。このため、ＦＭ検出法に基づく共振周波数のシフトによる検出では、バンド幅は５ｋＨｚ程度となる。振幅の変化による検出と共振周波数のシフトによる検出におけるテラヘルツ波の照射による加熱の周波数とその応答性の関係を図８に示す。図中、実線は振幅の変化による検出（ＳＤ）の場合を示し、破線はＦＭ検出法に基づく共振周波数のシフトによる検出（ＦＭＤ）の場合を示す。図示するように、共振周波数のシフトによる検出（ＦＭＤ）の方が振幅の変化による検出（ＳＤ）に比して、が広いバンド幅を有することが解る。 As shown in Expression (3), the frequency shift sensitivity R due to the incidence of the terahertz wave depends on the electromagnetic wave absorption efficiency η, but is not limited to the resonance Q value. For this reason, the terahertz wave detection device 20 according to the embodiment can operate at a higher speed than the case where the irradiation of the terahertz wave is detected by changing the amplitude of the fixed frequency. This point will be described below. FIG. 5 is an explanatory diagram showing a relationship between the frequency of vibration of the terahertz wave receiving element 30 and the detection voltage Vo when the terahertz wave is irradiated. In the figure, Δf represents the shift amount of the resonance frequency depending on the presence or absence of the terahertz wave irradiation, and ΔVo is the amount of change in the amplitude at the fixed frequency f depending on the presence or absence of the terahertz wave irradiation. FIG. 6 shows a detection waveform obtained by shifting the resonance frequency of the terahertz wave receiving element 30 based on the frequency modulation detection method (FM detection method) when the frequency of heating by irradiation with the terahertz wave is changed with respect to the terahertz wave receiving element 30. FIG. 7 is a diagram illustrating a detection waveform due to a change in amplitude at the fixed frequency f of the terahertz wave receiving element 30 when the frequency of heating by irradiation of the terahertz wave is changed with respect to the terahertz wave receiving element 30. It is explanatory drawing shown. As shown in FIG. 7, in the detection waveform due to the change in amplitude, the heating cycle by the irradiation of the terahertz wave can be clearly identified with respect to the heating frequency by the irradiation of the terahertz wave from 10 Hz to 160 Hz. At the frequency of heating by irradiation with 320 Hz terahertz waves, it becomes difficult to identify the period of heating by irradiation with terahertz waves. Therefore, in detection based on a change in amplitude, the bandwidth is about 100 Hz. On the other hand, as shown in FIG. 6, in the detection waveform by the shift of the resonance frequency based on the FM detection method, the heating by the irradiation of the terahertz wave from 10 Hz to 5.12 kHz is clearly heated by the irradiation of the terahertz wave. Can be identified. For this reason, in the detection by the shift of the resonance frequency based on the FM detection method, the bandwidth is about 5 kHz. FIG. 8 shows the relationship between the frequency of heating by the irradiation of the terahertz wave and the responsiveness in the detection based on the change in amplitude and the detection based on the shift of the resonance frequency. In the figure, the solid line shows the case of detection (SD) by changing the amplitude, and the broken line shows the case of detection (FMD) by shifting the resonance frequency based on the FM detection method. As shown in the figure, it is understood that the detection by the shift of the resonance frequency (FMD) has a wider bandwidth than the detection by the change in amplitude (SD).
以上説明した実施例のテラヘルツ波検出装置２０では、両持ち梁構造としたテラヘルツ波受信素子３０のテラヘルツ波吸収部３５にテラヘルツ波が照射されるとテラヘルツ波受信素子３０の梁部３３の温度が上昇し、弾性定数の温度依存性により梁部３３に応力が作用し、両持ち梁構造における共振周波数が変化する。このとき、位相同期回路４０は、テラヘルツ波受信素子３０の共振周波数の振動信号が電圧制御発振器４６から出力されるように調整するから、周波数変調検出法に基づく共振周波数の変化（シフト）を検出することにより、テラヘルツ波の受信を検出することができる。周波数変調検出法に基づく共振周波数のシフトを追跡する検出方法では、梁の振動振幅が一定に保たれるので、梁に溜まる振動エネルギーが変化せず、Ｑ値による時間の制限を受けないため、高速に動作することができる。この結果、動作速度の速いテラヘルツ波検出装置２０とすることができる。 In the terahertz wave detection device 20 of the embodiment described above, when the terahertz wave is irradiated to the terahertz wave absorbing unit 35 of the terahertz wave receiving element 30 having the double-supported beam structure, the temperature of the beam 33 of the terahertz wave receiving element 30 is increased. As a result of the temperature dependence of the elastic constant, stress acts on the beam portion 33, and the resonance frequency in the double-supported beam structure changes. At this time, the phase-locked loop circuit 40 adjusts so that the vibration signal having the resonance frequency of the terahertz wave receiving element 30 is output from the voltage-controlled oscillator 46, and therefore detects a change (shift) in the resonance frequency based on the frequency modulation detection method. By doing so, reception of the terahertz wave can be detected. In the detection method for tracking the shift of the resonance frequency based on the frequency modulation detection method, since the vibration amplitude of the beam is kept constant, the vibration energy accumulated in the beam does not change, and the time is not limited by the Q value. It can operate at high speed. As a result, the terahertz wave detection device 20 having a high operating speed can be obtained.
実施例のテラヘルツ波検出装置２０では、１個のテラヘルツ波受信素子３０を用いるものとしたが、図９に例示するように、複数のテラヘルツ波受信素子３０をＮ行Ｍ列（図９では８行２列）に配列したテラヘルツ波受信素子アレイ１３０を用いるものとしてもよい。こうすれば、テラヘルツ波によるイメージを検出することができる。 In the terahertz wave detection device 20 of the embodiment, one terahertz wave receiving element 30 is used. However, as illustrated in FIG. 9, a plurality of terahertz wave receiving elements 30 are arranged in N rows and M columns (in FIG. 9, 8 A terahertz wave receiving element array 130 arranged in two rows and two columns) may be used. By doing so, it is possible to detect an image by a terahertz wave.
実施例のテラヘルツ波検出装置２０では、テラヘルツ波受信素子３０を長さが１２０μｍで幅が４０μｍとして構成するものとしたが、このサイズに限定されるものではなく、梁の長さを変更したり、梁を幅や厚みを変更するものとしてもよい。 In the terahertz wave detection device 20 of the embodiment, the terahertz wave receiving element 30 is configured to have a length of 120 μm and a width of 40 μm. However, the present invention is not limited to this size, and the length of the beam can be changed. The width and thickness of the beam may be changed.
実施例のテラヘルツ波検出装置２０では、テラヘルツ波受信素子３０をＧａＡｓを主体とする半導体により形成するものとしたが、他の半導体材料を主体とする半導体により形成するものとしても構わない。 In the terahertz wave detection device 20 of the embodiment, the terahertz wave receiving element 30 is formed of a semiconductor mainly composed of GaAs, but may be formed of a semiconductor mainly composed of another semiconductor material.
実施例のテラヘルツ波検出装置２０では、両持ち梁構造としたテラヘルツ波受信素子３０の共振周波数のシフトを位相同期回路４０により検出するものとしたが、周波数変調検出法に基づくテラヘルツ波受信素子３０の共振周波数のシフトの検出であればよいから、位相同期回路４０以外の手法によりテラヘルツ波受信素子３０の共振周波数のシフトを検出するものとしてもよい。 In the terahertz wave detection device 20 of the embodiment, the shift of the resonance frequency of the terahertz wave receiving element 30 having a doubly-supported beam structure is detected by the phase synchronization circuit 40. However, the terahertz wave receiving element 30 based on the frequency modulation detection method is used. Therefore, the resonance frequency shift of the terahertz wave receiving element 30 may be detected by a method other than the phase synchronization circuit 40.
以上、本発明を実施するための形態について実施例を用いて説明したが、本発明はこうした実施例に何等限定されるものではなく、本発明の要旨を逸脱しない範囲内において、種々なる形態で実施し得ることは勿論である。 As mentioned above, although the form for implementing this invention was demonstrated using the Example, this invention is not limited at all to such an Example, In the range which does not deviate from the summary of this invention, it is with various forms. Of course, it can be implemented.
本発明は、テラヘルツ波検出装置の製造産業などに利用可能である。 The present invention can be used in the manufacturing industry of terahertz wave detection devices.
２０ テラヘルツ波検出装置、３０ テラヘルツ波受信素子、３１ 基板、３１ａ 基板部、３１ｂ 薄膜、３２ 犠牲層、３３ 梁部、３３ａ 第１梁層、３３ｂ 第２梁層、３３ｃ 第３梁層、３４ 二次元電子伝導層、３５ テラヘルツ波吸収層、３６ メサ構造、３６ａ 第１メサ層、３６ｂ 第２メサ層、３６ｃ 第３メサ層、３７ａ，３７ｂ 電極、３９ 信号増幅器、４０ 位相同期回路、４２ 位相比較器、４４ ローパスフィルタ、４６ 電圧制御発振器、１３０ テラヘルツ波受信素子アレイ。 20 terahertz wave detection device, 30 terahertz wave receiving element, 31 substrate, 31a substrate portion, 31b thin film, 32 sacrificial layer, 33 beam portion, 33a first beam layer, 33b second beam layer, 33c third beam layer, 34 Dimensional electron conduction layer, 35 terahertz wave absorption layer, 36 mesa structure, 36a first mesa layer, 36b second mesa layer, 36c third mesa layer, 37a, 37b electrode, 39 signal amplifier, 40 phase synchronization circuit, 42 phase comparison , 44 low pass filter, 46 voltage controlled oscillator, 130 terahertz wave receiving element array.
Claims (3)
テラヘルツ波の照射により温度が上昇するテラヘルツ波吸収部を中央に有する両持ち梁構造のテラヘルツ波受信素子と、
周波数変調検出法に基づいて前記テラヘルツ波受信素子の共振周波数のシフトによるテラヘルツ波の受信を検出する検出部と、
を備えるテラヘルツ波検出装置。 A terahertz wave detection device for detecting terahertz waves,
A terahertz wave receiving element having a terahertz wave absorbing portion having a terahertz wave absorbing portion in the center, the temperature of which rises by irradiation with terahertz waves,
A detection unit for detecting reception of a terahertz wave due to a shift of a resonance frequency of the terahertz wave receiving element based on a frequency modulation detection method;
A terahertz wave detecting device.
前記テラヘルツ波受信素子は、半導体集積回路作製技術を用いて形成される微小電子機械構造として構成されており、
前記検出部は、位相同期回路を用いて前記テラヘルツ波受信素子の共振周波数のシフトを検出する、
テラヘルツ波検出装置。 The terahertz wave detection device according to claim 1,
The terahertz wave receiving element is configured as a microelectromechanical structure formed using a semiconductor integrated circuit manufacturing technology,
The detection unit detects a shift in the resonance frequency of the terahertz wave receiving element using a phase locked loop.
Terahertz wave detection device.
前記テラヘルツ波受信素子をＮ行Ｍ列に配列したテラヘルツ波受信素子アレイを有する、
テラヘルツ波検出装置。 The terahertz wave detection device according to claim 2,
A terahertz wave receiving element array in which the terahertz wave receiving elements are arranged in N rows and M columns;
Terahertz wave detection device.
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