JP2017116871A - Detergent composition for resin mask peeling - Google Patents
Detergent composition for resin mask peeling Download PDFInfo
- Publication number
- JP2017116871A JP2017116871A JP2015254970A JP2015254970A JP2017116871A JP 2017116871 A JP2017116871 A JP 2017116871A JP 2015254970 A JP2015254970 A JP 2015254970A JP 2015254970 A JP2015254970 A JP 2015254970A JP 2017116871 A JP2017116871 A JP 2017116871A
- Authority
- JP
- Japan
- Prior art keywords
- component
- mass
- cleaning composition
- resin mask
- preferable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 111
- 239000011347 resin Substances 0.000 title claims abstract description 74
- 229920005989 resin Polymers 0.000 title claims abstract description 74
- 239000003599 detergent Substances 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 19
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 13
- 150000003839 salts Chemical class 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 43
- -1 hydroxyethyl group Chemical group 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 12
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 29
- 238000005260 corrosion Methods 0.000 abstract description 28
- 238000002845 discoloration Methods 0.000 abstract description 17
- 239000012141 concentrate Substances 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 8
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 5
- SEULWJSKCVACTH-UHFFFAOYSA-N 1-phenylimidazole Chemical compound C1=NC=CN1C1=CC=CC=C1 SEULWJSKCVACTH-UHFFFAOYSA-N 0.000 description 5
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
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- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
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- 150000001412 amines Chemical class 0.000 description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 4
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 3
- RNIPJYFZGXJSDD-UHFFFAOYSA-N 2,4,5-triphenyl-1h-imidazole Chemical compound C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 RNIPJYFZGXJSDD-UHFFFAOYSA-N 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 235000011054 acetic acid Nutrition 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000001384 succinic acid Substances 0.000 description 3
- KKKDZZRICRFGSD-UHFFFAOYSA-N 1-benzylimidazole Chemical compound C1=CN=CN1CC1=CC=CC=C1 KKKDZZRICRFGSD-UHFFFAOYSA-N 0.000 description 2
- HFDVRLIODXPAHB-UHFFFAOYSA-N 1-tetradecene Chemical compound CCCCCCCCCCCCC=C HFDVRLIODXPAHB-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 2
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 description 2
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 2
- NAPDOWNULRULLI-UHFFFAOYSA-N 2-benzyl-1h-imidazole Chemical compound C=1C=CC=CC=1CC1=NC=CN1 NAPDOWNULRULLI-UHFFFAOYSA-N 0.000 description 2
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 2
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 241000282994 Cervidae Species 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000003242 anti bacterial agent Substances 0.000 description 2
- 230000002421 anti-septic effect Effects 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 2
- 229940043276 diisopropanolamine Drugs 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ROBFUDYVXSDBQM-UHFFFAOYSA-N hydroxymalonic acid Chemical compound OC(=O)C(O)C(O)=O ROBFUDYVXSDBQM-UHFFFAOYSA-N 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
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- 230000007246 mechanism Effects 0.000 description 2
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- XYHKNCXZYYTLRG-UHFFFAOYSA-N 1h-imidazole-2-carbaldehyde Chemical compound O=CC1=NC=CN1 XYHKNCXZYYTLRG-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Detergent Compositions (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本開示は、樹脂マスク剥離用洗浄剤組成物、該洗浄剤組成物を用いた樹脂マスクの洗浄方法及び電子部品の製造方法に関する。 The present disclosure relates to a cleaning composition for removing a resin mask, a cleaning method for a resin mask using the cleaning composition, and a manufacturing method for an electronic component.
近年、パーソナルコンピュータや各種電子デバイスにおいては、低消費電力化、処理速度の高速化、小型化が進み、これらに搭載されるパッケージ基板などの配線は年々微細化が進んでいる。このような微細配線並びにピラーやバンプといった接続端子形成にはこれまでメタルマスク法が主に用いられてきたが、汎用性が低いことや配線等の微細化への対応が困難になってきたことから、他の新たな方法へと変わりつつある。 In recent years, in personal computers and various electronic devices, low power consumption, high processing speed, and miniaturization have progressed, and wirings such as package substrates mounted thereon have been miniaturized year by year. The metal mask method has been mainly used to form such fine wiring and connection terminals such as pillars and bumps. However, it is difficult to respond to miniaturization of wiring etc. because of its low versatility. To other new methods.
新たな方法の一つとして、ドライフィルムレジストをメタルマスクに代えて厚膜樹脂マスクとして使用する方法が知られている。この樹脂マスクは最終的に剥離・除去されるが、その際にアルカリ性の剥離用洗浄剤が使用される。このような剥離用洗浄剤として、例えば、特許文献1には、洗浄剤組成物100質量部中、第四級アンモニウム水酸化物を0.5質量部以上3.0質量部以下含有し、水溶性アミンを3.0質量部以上10.0質量部以下含有し、酸又はそのアンモニウム塩を0.3質量部以上2.5質量部以下含有し、水を50.0質量部以上95.0質量部以下含有する回路基板の製造に用いる樹脂マスク層用洗浄剤組成物が記載されている。 As one of new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. The resin mask is finally peeled and removed, and an alkaline peeling cleaning agent is used at that time. As such a cleaning agent for peeling, for example, Patent Document 1 contains 0.5 to 3.0 parts by mass of quaternary ammonium hydroxide in 100 parts by mass of the cleaning composition, Containing 3.0 parts by weight or more and 10.0 parts by weight or less of an acidic amine, 0.3 parts by weight or more and 2.5 parts by weight or less of an acid or ammonium salt thereof, and 50.0 parts by weight or more and 95.0 parts by weight of water. The cleaning composition for resin mask layers used for manufacture of the circuit board containing below mass part is described.
特許文献2には、0.1重量%〜40.0重量%の有機第四級アンモニウム塩基と、0.01重量%〜5重量%のアルカリ若しくはアルカリ土類金属塩基と、0重量%〜80重量%の溶媒及び/又はアミンと、0重量%〜5重量%の界面活性剤と、0重量%〜10重量%のキレート剤/不動態化剤と、0重量%〜98重量%の水とを含むSARC及びフォトレジストを除去するために有用な洗浄組成物が記載されている。 Patent Document 2 includes 0.1 wt% to 40.0 wt% organic quaternary ammonium base, 0.01 wt% to 5 wt% alkali or alkaline earth metal base, and 0 wt% to 80 wt%. Weight percent solvent and / or amine, 0 weight percent to 5 weight percent surfactant, 0 weight percent to 10 weight percent chelator / passivator, 0 weight percent to 98 weight percent water. Cleaning compositions useful for removing SARC and photoresist containing are described.
特許文献3には、組成物の全重量の約2〜55重量%の少なくとも1種類のアルカノールアミン、少なくとも1種類のモルホリン、又はこれらの混合物と、前記組成物の全重量の約20〜94重量%の少なくとも1種類の有機溶媒と、前記組成物の全重量の約0.5〜60重量%の水とを含む、フィルム・レジストを除去するための組成物が記載されている。 US Pat. No. 6,057,049 includes about 2 to 55% by weight of the total weight of the composition of at least one alkanolamine, at least one morpholine, or a mixture thereof, and about 20 to 94 weight of the total weight of the composition. A composition for removing a film resist is described, comprising:% of at least one organic solvent and about 0.5-60% by weight of water of the total weight of the composition.
特許文献4には、アンモニウム塩、水溶性有機アミン及び水を含有するフォトレジスト除去剤が記載されている。 Patent Document 4 describes a photoresist remover containing an ammonium salt, a water-soluble organic amine, and water.
特許文献5には、プリント配線板、モジュール基板等の電子回路基板及びリードフレーム等の電子部品の製造における配線パターン形成後のレジスト剥離工程に関し、有機アルカリ化合物を含有するレジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステムに関して記載されている。 Patent Document 5 relates to a resist stripping process after forming a wiring pattern in the manufacture of electronic components such as printed circuit boards and module boards, and electronic components such as lead frames, and a method for suppressing deterioration of a resist stripping solution containing an organic alkali compound. And a resist stripping method and system.
さらに、レジスト剥離において、微細配線に主に使用される銅やアルミニウム及び半田メッキの防食剤として、特許文献6〜8にはイミダゾール系化合物、糖類、糖アルコール類及びアゾール化合物等が記載されている。 Furthermore, in resist stripping, imidazole compounds, saccharides, sugar alcohols, azole compounds and the like are described in Patent Documents 6 to 8 as anticorrosives for copper and aluminum and solder plating mainly used for fine wiring. .
プリント基板等に微細配線を形成する上で、ドライフィルムレジスト等の樹脂マスクの残存はもちろんのこと、微細配線やバンプ形成に用いられるはんだやメッキ液等に含まれる助剤等の残存を低減するため、洗浄剤組成物には高い洗浄性が要求される。特に加熱処理された樹脂マスクは剥離しにくいため、洗浄剤組成物には高い樹脂マスク除去性が要求される。さらに、配線や接続端子の多くに使用される銅等の金属の腐食や変色はパッケージ基板の品質及び価値の低下等を招くことから、洗浄剤組成物には高い腐食及び変色防止性能が要求されている。しかし、前記特許文献に記載の方法では、洗浄性と腐食及び変色防止の両立が難しい。 When forming fine wiring on printed circuit boards, etc., not only residual resin masks such as dry film resists, but also reduction of residuals such as auxiliaries contained in solder and plating solution used for fine wiring and bump formation Therefore, a high cleaning property is required for the cleaning composition. In particular, since a heat-treated resin mask is difficult to peel off, a high resin mask removability is required for the cleaning composition. Furthermore, since corrosion and discoloration of metals such as copper used for many wiring and connection terminals lead to deterioration of the quality and value of the package substrate, the cleaning composition is required to have high corrosion and discoloration prevention performance. ing. However, in the method described in the patent document, it is difficult to achieve both cleanability and prevention of corrosion and discoloration.
そこで、本開示は、樹脂マスクの除去性に優れ、金属の腐食及び変色を抑制できる樹脂マスク剥離用洗浄剤組成物、該洗浄剤組成物を用いた樹脂マスクの洗浄方法及び基板の製造方法を提供する。 Accordingly, the present disclosure provides a cleaning composition for removing a resin mask that has excellent resin mask removability and can suppress metal corrosion and discoloration, a cleaning method for a resin mask using the cleaning composition, and a method for manufacturing a substrate. provide.
本開示は、下記式(I)で表される化合物(成分A)、下記式(II)で表される化合物(成分B)、炭素数1以上5以下のカルボン酸又はその塩(成分C)、下記式(III)で表される化合物(成分D)、下記式(IV)で表される化合物(成分E)、及び水(成分F)を含有する、樹脂マスク剥離用洗浄剤組成物に関する。 The present disclosure relates to a compound represented by the following formula (I) (component A), a compound represented by the following formula (II) (component B), a carboxylic acid having 1 to 5 carbon atoms or a salt thereof (component C). And a cleaning composition for removing a resin mask, comprising a compound represented by the following formula (III) (component D), a compound represented by the following formula (IV) (component E), and water (component F): .
上記式(I)において、R1は、水素原子、メチル基、エチル基及びアミノエチル基から選ばれる少なくとも1種であり、R2は、水素原子、ヒドロキシエチル基、ヒドロキシプロピル基、メチル基及びエチル基から選ばれる少なくとも1種であり、R3は、ヒドロキシエチル基及びヒドロキシプロピル基から選ばれる少なくとも1種である。 In the above formula (I), R 1 is at least one selected from a hydrogen atom, a methyl group, an ethyl group, and an aminoethyl group, and R 2 is a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, and At least one selected from an ethyl group, and R 3 is at least one selected from a hydroxyethyl group and a hydroxypropyl group.
上記式(II)において、R4、R5、R6及びR7は同一又は異なり、メチル基及びエチル基から選ばれる少なくとも1種を示す。 In the above formula (II), R 4 , R 5 , R 6 and R 7 are the same or different and represent at least one selected from a methyl group and an ethyl group.
R8-O-(CH2CH2O)n-H (III) R 8 —O— (CH 2 CH 2 O) n —H (III)
上記式(III)において、R8は、炭素数3以上7以下の炭化水素基であり、nは付加モル数であって1以上5以下の整数である。 In the above formula (III), R 8 is a hydrocarbon group having 3 to 7 carbon atoms, and n is an added mole number and an integer of 1 to 5.
上記式(IV)において、R9、R10、R11及びR13は同一又は異なり、水素原子、炭素数1以上7以下のアルキル基、及び芳香族置換基から選ばれる少なくとも1種であって、R9及びR10のうち少なくとも一つが芳香族置換基であり、R12は、水素原子及び芳香族置換基から選ばれる少なくとも1種である。 In the above formula (IV), R 9 , R 10 , R 11 and R 13 are the same or different and are at least one selected from a hydrogen atom, an alkyl group having 1 to 7 carbon atoms, and an aromatic substituent. , R 9 and R 10 are at least one aromatic substituent, and R 12 is at least one selected from a hydrogen atom and an aromatic substituent.
本開示は、樹脂マスクが付着した被洗浄物を本開示に係る洗浄剤組成物で洗浄する工程を含む、樹脂マスクの洗浄方法に関する。 The present disclosure relates to a method for cleaning a resin mask, including a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to the present disclosure.
本開示は、プリント基板、ウエハ、及び金属板から選ばれる少なくとも1つの電子部品に対し、樹脂マスクを使用した半田付け及びメッキ処理のいずれか少なくとも1つの処理を行う工程、及び、前記電子部品を本開示に係る洗浄方法により洗浄する工程を含む、電子部品の製造方法に関する。 The present disclosure includes a step of performing at least one of soldering and plating using a resin mask on at least one electronic component selected from a printed circuit board, a wafer, and a metal plate; and The present invention relates to an electronic component manufacturing method including a step of cleaning by a cleaning method according to the present disclosure.
本開示によれば、樹脂マスクの除去性が優れ、金属の腐食及び変色を抑制できる樹脂マスク剥離用洗浄剤組成物を提供できる。そして、本開示に係る洗浄剤組成物を用いることによって、高い収率で高品質の電子部品が得られうる。 According to the present disclosure, it is possible to provide a cleaning composition for removing a resin mask, which has excellent resin mask removability and can suppress corrosion and discoloration of a metal. And by using the cleaning composition according to the present disclosure, a high-quality electronic component can be obtained with a high yield.
本開示は、上記式(I)で表される化合物(成分A)、上記式(II)で表される化合物(成分B)、炭素数1以上5以下のカルボン酸又はその塩(成分C)、上記式(III)で表される化合物(成分D)、上記式(IV)で表される化合物(成分E)及び水(成分F)を含有する洗浄剤組成物を用いることで、ドライフィルムレジスト等の樹脂マスクを効率よく除去でき、さらに金属の腐食及び変色を抑制できるという知見に基づく。 The present disclosure relates to a compound represented by the above formula (I) (component A), a compound represented by the above formula (II) (component B), a carboxylic acid having 1 to 5 carbon atoms or a salt thereof (component C). By using a cleaning composition containing a compound represented by the above formula (III) (component D), a compound represented by the above formula (IV) (component E) and water (component F), a dry film This is based on the knowledge that a resin mask such as a resist can be efficiently removed, and further, corrosion and discoloration of a metal can be suppressed.
すなわち、本開示は、上記式(I)で表される化合物(成分A)、上記式(II)で表される化合物(成分B)、炭素数1以上5以下のカルボン酸又はその塩(成分C)、上記式(III)で表される化合物(成分D)、上記式(IV)で表される化合物(成分E)、及び水(成分F)を含有する、樹脂マスク剥離用洗浄剤組成物に関する。 That is, the present disclosure relates to a compound represented by the above formula (I) (component A), a compound represented by the above formula (II) (component B), a carboxylic acid having 1 to 5 carbon atoms or a salt thereof (component). A cleaning composition for removing a resin mask, comprising C), a compound represented by the above formula (III) (component D), a compound represented by the above formula (IV) (component E), and water (component F). Related to things.
本開示に係る洗浄剤組成物における効果の作用メカニズムの詳細は不明な部分があるが、以下のように推定される。アルカリ性の成分A及び成分Bは、はんだペーストやフラックス成分に含まれる酸成分や加熱により高分子量化した樹脂マスクの樹脂の結合を切断し、低分子量化する。そして、成分A及び水(成分F)が、低分子量化した樹脂マスクに浸透し、樹脂マスクを溶解することで、樹脂マスクを除去できると考えられる。また、はんだ金属の主成分である錫は強アルカリ水溶液に溶解するが、炭素数1以上5以下のカルボン酸又はその塩(成分C)の吸着により表面が保護され、アルカリ性の成分A及びBによる溶解反応が抑制されると推定される。さらに、成分D及び成分Eによって、微細配線等の金属の腐食及び変色を同時に抑制できると推定され、これにより、基板上に微細な回路の形成が可能になると考えられる。但し、本開示はこのメカニズムに限定して解釈されなくてもよい。 Although the details of the action mechanism of the effect in the cleaning composition according to the present disclosure are unclear, it is estimated as follows. Alkaline component A and component B cut the bond between the acid component contained in the solder paste and the flux component and the resin in the resin mask that has been polymerized by heating to lower the molecular weight. Then, it is considered that the resin mask can be removed by allowing the component A and water (component F) to penetrate into the resin mask having a low molecular weight and dissolve the resin mask. Further, tin, which is the main component of the solder metal, dissolves in the strong alkaline aqueous solution, but the surface is protected by adsorption of carboxylic acid having 1 to 5 carbon atoms or a salt thereof (component C), and the alkaline components A and B are used. It is estimated that the dissolution reaction is suppressed. Furthermore, it is presumed that the corrosion and discoloration of the metal such as the fine wiring can be simultaneously suppressed by the component D and the component E, and it is considered that a fine circuit can be formed on the substrate. However, the present disclosure is not limited to this mechanism.
[成分A:アミノアルコール]
本開示に係る洗浄剤組成物における成分Aは、下記式(I)で表される化合物である。
[Component A: amino alcohol]
Component A in the cleaning composition according to the present disclosure is a compound represented by the following formula (I).
上記式(I)において、R1は、水素原子、メチル基、エチル基及びアミノエチル基から選ばれる少なくとも1種であり、R2は、水素原子、ヒドロキシエチル基、ヒドロキシプロピル基、メチル基及びエチル基から選ばれる少なくとも1種であり、R3は、ヒドロキシエチル基及びヒドロキシプロピル基から選ばれる少なくとも1種である。 In the above formula (I), R 1 is at least one selected from a hydrogen atom, a methyl group, an ethyl group, and an aminoethyl group, and R 2 is a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, and At least one selected from an ethyl group, and R 3 is at least one selected from a hydroxyethyl group and a hydroxypropyl group.
成分Aとしては、モノエタノールアミン、ジエタノールアミン等のアルカノールアミン、並びにこれらのアルキル化物及びアミノアルキル化物等が挙げられる。成分Aの具体例としては、洗浄性向上の観点から、モノエタノールアミン、モノイソプロパノールアミン、N−メチルモノエタノールアミン、N−メチルモノイソプロパノールアミン、N−エチルモノエタノールアミン、N−エチルモノイソプロパノールアミン、ジエタノールアミン、ジイソプロパノールアミン、N−ジメチルモノエタノールアミン、N−ジメチルモノイソプロパノールアミン、N−メチルジエタノールアミン、N−メチルジイソプロパノールアミン、N−ジエチルモノエタノールアミン、N−ジエチルモノイソプロパノールアミン、N−エチルジエタノールアミン、N−エチルジイソプロパノールアミン、N−(β−アミノエチル)モノエタノールアミン、N−(β−アミノエチル)モノイソプロパノールアミン、N−(β−アミノエチル)ジエタノールアミン、N−(β−アミノエチル)ジイソプロパノールアミンから選ばれる少なくとも1種が好ましく、モノエタノールアミン、モノイソプロパノールアミン、ジエタノールアミン、N−メチルモノエタノールアミン、N−ジメチルモノエタノールアミン、N−エチルモノエタノールアミン及びN−(β−アミノエチル)モノエタノールアミンから選ばれる少なくとも1種がより好ましく、モノエタノールアミン及びモノイソプロパノールアミンがさらに好ましい。 Examples of component A include alkanolamines such as monoethanolamine and diethanolamine, and alkylated products and aminoalkylated products thereof. Specific examples of component A include monoethanolamine, monoisopropanolamine, N-methylmonoethanolamine, N-methylmonoisopropanolamine, N-ethylmonoethanolamine, and N-ethylmonoisopropanolamine from the viewpoint of improving detergency. , Diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyl Diethanolamine, N-ethyldiisopropanolamine, N- (β-aminoethyl) monoethanolamine, N- (β-aminoethyl) monoisopropanolamine, N- (β At least one selected from aminoethyl) diethanolamine and N- (β-aminoethyl) diisopropanolamine is preferable, and monoethanolamine, monoisopropanolamine, diethanolamine, N-methylmonoethanolamine, N-dimethylmonoethanolamine, N -At least 1 sort (s) chosen from ethyl monoethanolamine and N-((beta) -aminoethyl) monoethanolamine is more preferable, and monoethanolamine and monoisopropanolamine are still more preferable.
本開示に係る洗浄剤組成物の使用時における成分Aの含有量は、樹脂マスク除去性向上の観点から、1質量%以上が好ましく、2質量%以上がより好ましく、2.5質量%以上がさらに好ましく、3質量%以上がよりさらに好ましく、そして、金属腐食抑制の観点から、10質量%以下が好ましく、8質量%以下がより好ましく、6質量%以下がさらに好ましく、5質量%以下がよりさらに好ましい。 The content of Component A during use of the cleaning composition according to the present disclosure is preferably 1% by mass or more, more preferably 2% by mass or more, and more preferably 2.5% by mass or more from the viewpoint of improving the resin mask removability. More preferably, 3% by mass or more is more preferable, and from the viewpoint of suppressing metal corrosion, 10% by mass or less is preferable, 8% by mass or less is more preferable, 6% by mass or less is more preferable, and 5% by mass or less is more preferable. Further preferred.
本開示において「洗浄剤組成物の使用時における各成分の含有量」とは、洗浄時、すなわち、洗浄剤組成物を洗浄に使用する時点での各成分の含有量をいう。 In the present disclosure, “content of each component when using the cleaning composition” refers to the content of each component at the time of cleaning, that is, when the cleaning composition is used for cleaning.
[成分B:水酸化テトラアルキルアンモニウム]
本開示に係る洗浄剤組成物における成分Bは、下記式(II)で表される化合物である。
[Component B: Tetraalkylammonium hydroxide]
Component B in the cleaning composition according to the present disclosure is a compound represented by the following formula (II).
上記式(II)において、R4、R5、R6及びR7は同一又は異なり、メチル基及びエチル基から選ばれる少なくとも1種を示す。 In the above formula (II), R 4 , R 5 , R 6 and R 7 are the same or different and represent at least one selected from a methyl group and an ethyl group.
成分Bとしては、例えば、分子中の炭素数が4以上8以下のテトラアルキルアンモニウムカチオンとヒドロキシドとからなる塩等が挙げられる。成分Bの具体例としては、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、及びトリメチルエチルアンモニウムヒドロキシドから選ばれる少なくとも1種が挙げられ、樹脂マスク除去性向上の観点から、テトラメチルアンモニウムヒドロキシドが好ましい。 Component B includes, for example, a salt composed of a tetraalkylammonium cation having 4 to 8 carbon atoms in the molecule and a hydroxide. Specific examples of component B include at least one selected from tetramethylammonium hydroxide, tetraethylammonium hydroxide, and trimethylethylammonium hydroxide. From the viewpoint of improving resin mask removability, tetramethylammonium hydroxide is preferable.
本開示に係る洗浄剤組成物の使用時における成分Bの含有量は、樹脂マスク除去性向上の観点から、0.1質量%以上が好ましく、0.2質量%以上がより好ましく、0.5質量%以上がさらに好ましく、1質量%以上がよりさらに好ましく、そして、金属腐食抑制の観点から、3質量%以下が好ましく、2質量%以下がより好ましく、1.5質量%以下がさらに好ましく、1.2質量%以下がよりさらに好ましい。 The content of Component B during use of the cleaning composition according to the present disclosure is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, from the viewpoint of improving resin mask removability. More preferably 1% by mass or more, more preferably 1% by mass or more, and preferably 3% by mass or less, more preferably 2% by mass or less, further preferably 1.5% by mass or less, from the viewpoint of suppressing metal corrosion. 1.2 mass% or less is still more preferable.
本開示に係る洗浄剤組成物中の成分Aの含有量と成分Bの含有量との比A/Bは、樹脂マスク除去性向上の観点から、0.5以上が好ましく、1以上がより好ましく、2以上がさらに好ましく、そして、同様の観点から、50以下が好ましく、40以下がより好ましく、35以下がさらに好ましい。 The ratio A / B between the content of component A and the content of component B in the cleaning composition according to the present disclosure is preferably 0.5 or more, more preferably 1 or more, from the viewpoint of improving the resin mask removability. 2 or more is more preferable, and from the same viewpoint, 50 or less is preferable, 40 or less is more preferable, and 35 or less is more preferable.
[成分C:カルボン酸]
本開示に係る洗浄剤組成物における成分Cは、炭素数1以上5以下のカルボン酸又はその塩である。炭素数は、カルボン酸の全炭素数である。
[Component C: Carboxylic acid]
Component C in the cleaning composition according to the present disclosure is a carboxylic acid having 1 to 5 carbon atoms or a salt thereof. The number of carbons is the total number of carbons in the carboxylic acid.
成分Cのカルボン酸としては、樹脂マスク除去性向上及び金属変色抑制の観点から、モノカルボン酸、ジカルボン酸等が挙げられ、具体的には、ギ酸、酢酸、プロピオン酸、酪酸、イソ酪酸、吉草酸、イソ吉草酸、蓚酸、マロン酸、琥珀酸、グルタル酸、グリコール酸、乳酸、ヒドロキシ酪酸、グリセリン酸、タルトロン酸、リンゴ酸、酒石酸、グリシン及びアラニンから選ばれる少なくとも1種が挙げられ、ギ酸、酢酸、蓚酸及び琥珀酸から選ばれる少なくとも1種が好ましい。これらカルボン酸の塩としては、上記カルボン酸と、アルカリ金属、アルカリ土類金属、アンモニア及び有機アミン化合物から選ばれる少なくとも1種との塩が挙げられる。 Examples of the carboxylic acid of component C include monocarboxylic acid, dicarboxylic acid and the like from the viewpoint of improving resin mask removability and suppressing metal discoloration. Specifically, formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, At least one selected from valeric acid, isovaleric acid, succinic acid, malonic acid, succinic acid, glutaric acid, glycolic acid, lactic acid, hydroxybutyric acid, glyceric acid, tartronic acid, malic acid, tartaric acid, glycine and alanine, and formic acid At least one selected from acetic acid, succinic acid and succinic acid is preferred. Examples of these carboxylic acid salts include salts of the carboxylic acid with at least one selected from alkali metals, alkaline earth metals, ammonia, and organic amine compounds.
本開示に係る洗浄剤組成物の使用時における成分Cの含有量は、金属腐食抑制の観点から、0.05質量%以上が好ましく、0.1質量%以上がより好ましく、0.4質量%以上がさらに好ましく、0.6質量%以上がよりさらに好ましく、そして、樹脂マスク除去性向上の観点から、2質量%以下が好ましく、1質量%以下がより好ましく、0.5質量%以下がさらに好ましく、0.1質量%以下がよりさらに好ましい。 The content of Component C during use of the cleaning composition according to the present disclosure is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, and 0.4% by mass from the viewpoint of suppressing metal corrosion. The above is more preferable, 0.6% by mass or more is more preferable, and from the viewpoint of improving the resin mask removability, 2% by mass or less is preferable, 1% by mass or less is more preferable, and 0.5% by mass or less is further preferable. Preferably, 0.1 mass% or less is still more preferable.
[成分D:グリコールエーテル]
本開示に係る洗浄剤組成物における成分Dは、下記式(III)で表される化合物である。
[Component D: Glycol ether]
Component D in the cleaning composition according to the present disclosure is a compound represented by the following formula (III).
R8-O-(CH2CH2O)n-H (III) R 8 —O— (CH 2 CH 2 O) n —H (III)
上記式(III)において、R8は、炭素数3以上7以下の炭化水素基を示し、樹脂マスク除去性向上の観点から、炭素数4以上6以下の炭化水素基が好ましく、4以上6以下のアルキル基がより好ましい。nは付加モル数を示し、1以上5以下の整数であり、洗浄性向上及び安定性向上の観点から、1以上5以上の整数であって、2以上4以下が好ましく、2以上3以下がより好ましい。 In the above formula (III), R 8 represents a hydrocarbon group having 3 to 7 carbon atoms, and preferably a hydrocarbon group having 4 to 6 carbon atoms from the viewpoint of improving the resin mask removability. The alkyl group is more preferable. n represents the number of added moles, and is an integer of 1 to 5, and is an integer of 1 to 5 and preferably 2 to 4 and preferably 2 to 3 from the viewpoints of improvement in cleaning properties and stability. More preferred.
成分Dとしては、炭素数3以上7以下の炭化水素基を有するグリコールエーテルが挙げられ、例えば、エチレングリコールモノアルキルエーテル、ジエチレングリコールモノアルキルエーテル、トリエチレングリコールモノアルキルエーテル、テトラエチレングリコールモノアルキルエーテル、ペンタエチレングリコールモノアルキルエーテル、エチレングリコールモノフェニルエーテル、ジエチレングリコールモノフェニルエーテル、トリエチレングリコールモノフェニルエーテル、テトラエチレングリコールモノフェニルエーテル、ペンタエチレングリコールモノフェニルエーテル、エチレングリコールモノベンジルエーテル、ジエチレングリコールモノベンジルエーテル、トリエチレングリコールモノベンジルエーテル、テトラエチレングリコールモノベンジルエーテル及びペンタエチレングリコールモノベンジルエーテル等が挙げられる。成分Dの具体例としては、樹脂マスク除去及び金属変色抑制の観点から、エチレングリコールモノブチルエーテル、ジエチレングリコールモノブチルエーテル、トリエチレングリコールモノブチルエーテル、モノエチレングリコールモノヘキシルエーテル、ジエチレングリコールモノヘキシルエーテル、エチレングリコールモノフェニルエーテル、ジエチレングリコールモノフェニルエーテル、エチレングリコールモノベンジルエーテル、ジエチレングリコールモノベンジルエーテルが好ましく、エチレングリコールモノブチルエーテル、ジエチレングリコールモノブチルエーテル、トリエチレングリコールモノブチルエーテル、モノエチレングリコールモノヘキシルエーテル、ジエチレングリコールモノヘキシルエーテルがより好ましく、ジエチレングリコールモノブチルエーテルがさらに好ましい。 Component D includes glycol ethers having a hydrocarbon group having 3 to 7 carbon atoms, such as ethylene glycol monoalkyl ether, diethylene glycol monoalkyl ether, triethylene glycol monoalkyl ether, tetraethylene glycol monoalkyl ether, Pentaethylene glycol monoalkyl ether, ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, triethylene glycol monophenyl ether, tetraethylene glycol monophenyl ether, pentaethylene glycol monophenyl ether, ethylene glycol monobenzyl ether, diethylene glycol monobenzyl ether, Triethylene glycol monobenzyl ether, tetraethylene Glycol monobenzyl ether and pentaethylene glycol monobenzyl ether. Specific examples of component D include ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, monoethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl from the viewpoint of resin mask removal and metal discoloration suppression. Ether, diethylene glycol monophenyl ether, ethylene glycol monobenzyl ether, diethylene glycol monobenzyl ether are preferred, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, monoethylene glycol monohexyl ether, diethylene glycol monohexyl ether are more preferred, Ethylene glycol monobutyl ether is more preferred.
本開示に係る洗浄剤組成物の使用時における成分Dの含有量は、樹脂マスク除去性向上及び金属腐食抑制の観点から、0.1質量%以上が好ましく、0.2質量%以上がより好ましく、0.25質量%以上がさらに好ましく、そして、同様の観点から、10質量%以下が好ましく、5質量%以下がより好ましく、1質量%以下がさらに好ましく、0.5質量%以下がよりさらに好ましい。 The content of Component D during use of the cleaning composition according to the present disclosure is preferably 0.1% by mass or more, and more preferably 0.2% by mass or more from the viewpoint of improving resin mask removability and suppressing metal corrosion. 0.25% by mass or more is more preferable, and from the same viewpoint, 10% by mass or less is preferable, 5% by mass or less is more preferable, 1% by mass or less is further preferable, and 0.5% by mass or less is further more preferable. preferable.
[成分E:イミダゾール系化合物]
本開示に係る洗浄剤組成物における成分Eは、下記式(IV)で表される化合物である。
[Component E: Imidazole compound]
Component E in the cleaning composition according to the present disclosure is a compound represented by the following formula (IV).
上記式(IV)において、R9、R10、R11及びR13は同一又は異なり、水素原子、炭素数1以上7以下のアルキル基、及び芳香族置換基から選ばれる少なくとも1種であって、R9及びR10のうち少なくとも一つが芳香族置換基であり、R12は、水素原子及び芳香族置換基から選ばれる少なくとも1種である。前記芳香族置換基としては、例えば、炭素数6以上10以下の芳香族置換基が挙げられ、具体的には、ベンジル基、フェニル基、フェネチル基及びナフチル基から選ばれる少なくとも1種が挙げられ、ベンジル基及びフェニル基から選ばれる少なくとも1種が好ましい。 In the above formula (IV), R 9 , R 10 , R 11 and R 13 are the same or different and are at least one selected from a hydrogen atom, an alkyl group having 1 to 7 carbon atoms, and an aromatic substituent. , R 9 and R 10 are at least one aromatic substituent, and R 12 is at least one selected from a hydrogen atom and an aromatic substituent. Examples of the aromatic substituent include aromatic substituents having 6 to 10 carbon atoms, and specifically include at least one selected from a benzyl group, a phenyl group, a phenethyl group, and a naphthyl group. , At least one selected from a benzyl group and a phenyl group is preferable.
成分Eとしては、イミダゾール環の1位または2位に芳香族置換基を有するイミダゾール系化合物が挙げられ、例えば、イミダゾール環の1位または2位に炭素数6以上10以下の芳香族置換基を有するイミダゾール系化合物が挙げられる。成分Eの具体例としては、1−フェニルイミダゾール、2−フェニルイミダゾール、1−ベンジルイミダゾール、2−ベンジルイミダゾール、1−フェニル−2−アルキルイミダゾール、1−ベンジル−2−アルキルイミダゾール、1−アルキル−2−フェニルイミダゾール、1−アルキル−2−ベンジルイミダゾール、1−フェニル−2−フェニルイミダゾール、1−ベンジル−2−ベンジルイミダゾール、2,4,5−トリフェニルイミダゾール等が挙げられ、金属変色抑制の観点から、1−フェニルイミダゾール、2−フェニルイミダゾール、1−ベンジルイミダゾール、2−ベンジルイミダゾール、1−フェニル−2−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−メチル−2−フェニルイミダゾール、1−メチル−2−ベンジルイミダゾール、及び2,4,5−トリフェニルイミダゾールから選ばれる少なくとも1種が好ましく、1−フェニルイミダゾール、2−フェニルイミダゾール、1−ベンジル−2−メチルイミダゾール、及び2,4,5−トリフェニルイミダゾールから選ばれる少なくとも1種がより好ましく、金属の腐食抑制及び変色抑制の観点から、1−フェニルイミダゾール、及び2−フェニルイミダゾールから選ばれる少なくとも1種がさらに好ましく、2−フェニルイミダゾールがよりさらに好ましい。 Component E includes imidazole compounds having an aromatic substituent at the 1- or 2-position of the imidazole ring. For example, an aromatic substituent having 6 to 10 carbon atoms is provided at the 1- or 2-position of the imidazole ring. Examples thereof include imidazole compounds. Specific examples of component E include 1-phenylimidazole, 2-phenylimidazole, 1-benzylimidazole, 2-benzylimidazole, 1-phenyl-2-alkylimidazole, 1-benzyl-2-alkylimidazole, 1-alkyl- Examples include 2-phenylimidazole, 1-alkyl-2-benzylimidazole, 1-phenyl-2-phenylimidazole, 1-benzyl-2-benzylimidazole, 2,4,5-triphenylimidazole, and the like. From the viewpoint, 1-phenylimidazole, 2-phenylimidazole, 1-benzylimidazole, 2-benzylimidazole, 1-phenyl-2-methylimidazole, 1-benzyl-2-methylimidazole, 1-methyl-2-phenylimidazole, 1-Me At least one selected from ru-2-benzylimidazole and 2,4,5-triphenylimidazole is preferred, 1-phenylimidazole, 2-phenylimidazole, 1-benzyl-2-methylimidazole, and 2,4,4 At least one selected from 5-triphenylimidazole is more preferable, and at least one selected from 1-phenylimidazole and 2-phenylimidazole is more preferable from the viewpoint of suppressing corrosion and discoloration of the metal, and 2-phenylimidazole. Is even more preferable.
本開示に係る洗浄剤組成物の使用時における成分Eの含有量は、金属の腐食抑制及び変色抑制の観点から、0.05質量%以上が好ましく、0.07質量%以上がより好ましく、0.1質量%以上がさらに好ましく、そして、同様の観点から、1質量%以下が好ましく、0.5質量%以下がより好ましく、0.3質量%以下がさらに好ましく、0.25質量%以下がよりさらに好ましい。 The content of Component E during use of the cleaning composition according to the present disclosure is preferably 0.05% by mass or more, more preferably 0.07% by mass or more, from the viewpoint of inhibiting corrosion and discoloration of the metal. 1% by mass or more is more preferable, and from the same viewpoint, 1% by mass or less is preferable, 0.5% by mass or less is more preferable, 0.3% by mass or less is further preferable, and 0.25% by mass or less is preferable. Even more preferred.
本開示に係る洗浄組成物中の成分Eの含有量と、成分A及び成分Bの合計量との比E/(A+B)は、金属腐食抑制の観点から、0.005以上が好ましく、0.008以上がより好ましく、0.01以上がさらに好ましく、そして、成分Eの析出抑制(洗浄剤組成物の安定性)の観点から、0.5以下が好ましく、0.3以下がより好ましく、0.1以下がさらに好ましい。 The ratio E / (A + B) of the content of the component E in the cleaning composition according to the present disclosure and the total amount of the component A and the component B is preferably 0.005 or more from the viewpoint of suppressing metal corrosion. 008 or more is more preferable, 0.01 or more is more preferable, and from the viewpoint of suppressing precipitation of Component E (stability of the cleaning composition), 0.5 or less is preferable, 0.3 or less is more preferable, 0 .1 or less is more preferable.
[成分F:水]
本開示に係る洗浄剤組成物における成分Fは、水である。水としては、イオン交換水、RO水、蒸留水、純水、超純水が使用されうる。水の含有量は、本開示に係る洗浄剤組成物の使用態様にあわせて適宜設定すればよい。
[Component F: Water]
Component F in the cleaning composition according to the present disclosure is water. As water, ion exchange water, RO water, distilled water, pure water, or ultrapure water can be used. What is necessary is just to set content of water suitably according to the usage condition of the cleaning composition which concerns on this indication.
本開示に係る洗浄剤組成物の使用時における成分Fの含有量は、樹脂マスク除去性向上及び洗浄剤組成物を安定化する観点から、50質量%以上が好ましく、60質量%以上がより好ましく、70質量%以上がさらに好ましく、そして、同様の観点から、97質量%以下が好ましく、96質量%以下がより好ましく、95.5質量%以下がさらに好ましい。 The content of Component F during use of the cleaning composition according to the present disclosure is preferably 50% by mass or more, and more preferably 60% by mass or more from the viewpoint of improving the resin mask removability and stabilizing the cleaning composition. 70 mass% or more is more preferable, and from the same viewpoint, 97 mass% or less is preferable, 96 mass% or less is more preferable, and 95.5 mass% or less is more preferable.
本開示に係る洗浄剤祖生物の使用時における成分Dの質量と成分Fの質量との比(D/F)が、樹脂マスク除去性向上及び金属腐食抑制の観点から、0.002以上であって、0.0025以上が好ましく、樹脂マスク除去性向上及び金属腐食抑制の観点、並びに洗浄剤組成物の安定性の観点から、0.1以下であって、0.08以下が好ましく、0.06以下がより好ましい。 The ratio (D / F) of the mass of component D to the mass of component F (D / F) at the time of use of the cleaning progenitor according to the present disclosure is 0.002 or more from the viewpoint of improving resin mask removability and suppressing metal corrosion. 0.0025 or more is preferable, and from the viewpoint of improving the removability of the resin mask and suppressing metal corrosion, and from the viewpoint of the stability of the cleaning composition, it is 0.1 or less, preferably 0.08 or less, and 0.0. 06 or less is more preferable.
[洗浄剤組成物のその他の成分]
本開示に係る洗浄剤組成物は、必要に応じてその他の成分を含有することができる。本開示に係る洗浄剤組成物の使用時におけるその他の成分の含有量は、0質量%以上2.0質量%以下が好ましく、0質量%以上1.5質量%以下がより好ましく、0質量%以上1.3質量%以下がさらに好ましく、0質量%以上1.0質量%以下がさらにより好ましい。
[Other components of cleaning composition]
The cleaning composition according to the present disclosure may contain other components as necessary. The content of other components at the time of use of the cleaning composition according to the present disclosure is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and 0% by mass. The content is more preferably 1.3% by mass or less and even more preferably 0% by mass or more and 1.0% by mass or less.
本開示に係る洗浄剤組成物におけるその他の成分としては、発泡性抑制の観点から、例えば、炭素数10〜18の炭化水素が挙げられ、具体的には、ドデセン、テトラデセンが挙げられる。 Other components in the cleaning composition according to the present disclosure include, for example, hydrocarbons having 10 to 18 carbon atoms, and specifically include dodecene and tetradecene from the viewpoint of suppressing foaming.
さらに、本開示に係る洗浄剤組成物は、本開示の効果を損なわない範囲で、必要に応じて、通常洗浄剤に用いられる、ヒドロキシエチルアミノ酢酸、ヒドロキシエチルイミノ2酢酸、エチレンジアミンテトラ酢酸等のアミノカルボン酸塩等のキレート力を持つ化合物、防腐剤、防錆剤、殺菌剤、抗菌剤、シリコーン系消泡剤、酸化防止剤、ヤシ脂肪酸メチルや酢酸ベンジル等のエステルあるいはアルコール類等を適宜含有することができる。 Furthermore, the cleaning composition according to the present disclosure is, as necessary, such as hydroxyethylaminoacetic acid, hydroxyethyliminodiacetic acid, ethylenediaminetetraacetic acid, and the like, as long as it does not impair the effects of the present disclosure. Compounds with chelating ability such as aminocarboxylates, antiseptics, rust preventives, bactericides, antibacterial agents, silicone antifoaming agents, antioxidants, esters or alcohols such as coconut fatty acid methyl and benzyl acetate, etc. Can be contained.
[洗浄剤組成物の製造方法]
本開示に係る洗浄剤組成物は、前記成分A〜F及び必要に応じてその他の成分を公知の方法で配合することにより製造できる。例えば、本開示に係る洗浄剤組成物は、少なくとも前記成分A〜Fを配合してなる。したがって、本開示は、少なくとも前記成分A〜Fを配合する工程を含む、洗浄剤組成物の製造方法に関する。本開示において「配合する」とは、成分A〜F及び必要に応じてその他の成分を同時に又は任意の順に混合することを含む。本開示に係る洗浄剤組成物の製造方法において、各成分の配合量は、上述した本開示に係る洗浄剤組成物の各成分の含有量と同じとすることができる。
[Production method of cleaning composition]
The cleaning composition according to the present disclosure can be produced by blending the components A to F and, if necessary, other components by a known method. For example, the cleaning composition according to the present disclosure includes at least the components A to F. Therefore, this indication is related with the manufacturing method of the detergent constituent including the process of blending at least the above-mentioned ingredients AF. In the present disclosure, “compounding” includes mixing the components A to F and other components as necessary at the same time or in any order. In the manufacturing method of the cleaning composition according to the present disclosure, the blending amount of each component may be the same as the content of each component of the cleaning composition according to the present disclosure described above.
本開示に係る洗浄剤組成物の使用時のpHは、樹脂マスク除去性向上の観点から、10.0以上が好ましく、10.5以上がより好ましく、そして、金属腐食抑制の観点から、14以下が好ましく、13.5以下がより好ましく、12.0以下がさらに好ましい。本開示においてpHは、必要により、硝酸、硫酸等の無機酸、オキシカルボン酸、多価カルボン酸、アミノポリカルボン酸、アミノ酸等の成分C以外の有機酸、及びそれらの金属塩やアンモニウム塩、アンモニア、水酸化ナトリウム、水酸化カリウム、アミン等の成分A及びB以外の塩基性物質を適宜、所望量で配合することで調整することができる。 The pH at the time of use of the cleaning composition according to the present disclosure is preferably 10.0 or more, more preferably 10.5 or more from the viewpoint of improving the resin mask removability, and 14 or less from the viewpoint of suppressing metal corrosion. Is preferable, 13.5 or less is more preferable, and 12.0 or less is more preferable. In the present disclosure, if necessary, the pH may be an inorganic acid such as nitric acid or sulfuric acid, an oxycarboxylic acid, a polyvalent carboxylic acid, an aminopolycarboxylic acid, an organic acid other than Component C such as an amino acid, or a metal salt or ammonium salt thereof. It can adjust by mix | blending basic substances other than component A and B, such as ammonia, sodium hydroxide, potassium hydroxide, an amine, in a desired quantity suitably.
本開示に係る洗浄剤組成物は、分離や析出等を起こして保管安定性を損なわない範囲で成分Fの水の量を減らした濃縮物として調製してもよい。洗浄剤組成物の濃縮物は、輸送及び貯蔵の観点から、希釈倍率3倍以上の濃縮物とすることが好ましく、保管安定性の観点から、希釈倍率10倍以下の濃縮物とすることが好ましい。洗浄剤組成物の濃縮物は、使用時に成分A〜Fが上述した含有量(すなわち、洗浄時の含有量)になるよう水で希釈して使用することができる。さらに洗浄剤組成物の濃縮物は、使用時に各成分を別々に添加して使用することもできる。本開示において濃縮液の洗浄剤組成物の「使用時」又は「洗浄時」とは、洗浄剤組成物の濃縮物が希釈された状態をいう。 The cleaning composition according to the present disclosure may be prepared as a concentrate in which the amount of water of component F is reduced within a range that does not impair storage stability by causing separation or precipitation. The concentrate of the cleaning composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and is preferably a concentrate having a dilution ratio of 10 times or less from the viewpoint of storage stability. . The concentrate of the cleaning composition can be used by diluting with water so that the components A to F have the above-described content (that is, the content at the time of cleaning) at the time of use. Furthermore, the concentrate of a cleaning composition can also be used by adding each component separately at the time of use. In the present disclosure, “when using” or “when cleaning” the cleaning composition of the concentrated solution refers to a state in which the concentrate of the cleaning composition is diluted.
本開示に係る洗浄剤組成物が濃縮物として製造された場合には、その濃縮分だけ高くなりうる。本開示に係る洗浄剤組成物が濃縮物である場合、洗浄剤組成物の濃縮物中の成分Aの含有量は、樹脂マスク除去性向上の観点から、5質量%以上が好ましく、9質量%以上がより好ましく、15質量%以上がさらに好ましく、18質量%以上がよりさらに好ましく、そして、金属腐食抑制の観点から、30質量%以下が好ましく、25質量%以下がより好ましく、20質量%以下がさらに好ましく、15質量%以下がよりさらに好ましい。 When the cleaning composition according to the present disclosure is produced as a concentrate, the concentration can be increased by that amount. When the cleaning composition according to the present disclosure is a concentrate, the content of Component A in the cleaning composition concentrate is preferably 5% by mass or more, and 9% by mass from the viewpoint of improving resin mask removability. The above is more preferable, 15% by mass or more is further preferable, 18% by mass or more is more preferable, and from the viewpoint of suppressing metal corrosion, 30% by mass or less is preferable, 25% by mass or less is more preferable, and 20% by mass or less. Is more preferable, and 15 mass% or less is still more preferable.
本開示に係る洗浄剤組成物の濃縮物中の成分Bの含有量は、樹脂マスク除去性向上の観点から、0.3質量%以上が好ましく、1質量%以上がより好ましく、2質量%以上がさらに好ましく、3質量%以上がよりさらに好ましく、そして、金属腐食抑制の観点から、10質量%以下が好ましく、8質量%以下がより好ましく、6質量%以下がさらに好ましく、5質量%以下がよりさらに好ましい。 The content of Component B in the concentrate of the cleaning composition according to the present disclosure is preferably 0.3% by mass or more, more preferably 1% by mass or more, and more preferably 2% by mass or more from the viewpoint of improving the resin mask removability. Is more preferably 3% by mass or more, and from the viewpoint of suppressing metal corrosion, 10% by mass or less is preferable, 8% by mass or less is more preferable, 6% by mass or less is further preferable, and 5% by mass or less is preferable. Even more preferred.
本開示に係る洗浄剤組成物の濃縮物中の成分Cの含有量は、金属腐食抑制の観点から、0.2質量%以上が好ましく、0.5質量%以上がより好ましく、1質量%以上がさらに好ましく、2質量%以上がよりさらに好ましく、そして、樹脂マスク除去性向上の観点から、5質量%以下が好ましく、3質量%以下がより好ましく、2質量%以下がさらに好ましく、1.5質量%以下がよりさらに好ましい。 The content of the component C in the concentrate of the cleaning composition according to the present disclosure is preferably 0.2% by mass or more, more preferably 0.5% by mass or more, and more preferably 1% by mass or more from the viewpoint of suppressing metal corrosion. Is more preferable, 2% by mass or more is more preferable, and from the viewpoint of improving the removability of the resin mask, 5% by mass or less is preferable, 3% by mass or less is more preferable, and 2% by mass or less is more preferable. The mass% or less is more preferable.
本開示に係る洗浄剤組成物の濃縮物中の成分Dの含有量は、樹脂マスク除去性向上及び金属腐食抑制の観点から、0.5質量%以上が好ましく、0.8質量%以上がより好ましく、1質量%以上がさらに好ましく、そして、同様の観点から、30質量%以下が好ましく、20質量%以下がより好ましく、10質量%以下がさらに好ましく、5質量%以下がよりさらに好ましい。 The content of the component D in the concentrate of the cleaning composition according to the present disclosure is preferably 0.5% by mass or more, more preferably 0.8% by mass or more from the viewpoint of improving resin mask removability and suppressing metal corrosion. Preferably, 1% by mass or more is more preferable, and from the same viewpoint, 30% by mass or less is preferable, 20% by mass or less is more preferable, 10% by mass or less is further preferable, and 5% by mass or less is more preferable.
本開示に係る洗浄剤組成物の濃縮物中の成分Eの含有量は、金属の腐食抑制及び変色抑制の観点から、0.1質量%以上が好ましく、0.2質量%以上がより好ましく、0.3質量%以上がさらに好ましく、そして、同様の観点から、5質量%以下が好ましく、3質量%以下がより好ましく、2質量%以下がさらに好ましく、1質量%以下がよりさらに好ましい。 The content of the component E in the concentrate of the cleaning composition according to the present disclosure is preferably 0.1% by mass or more, more preferably 0.2% by mass or more from the viewpoint of metal corrosion inhibition and discoloration inhibition. 0.3 mass% or more is more preferable, and from the same viewpoint, 5 mass% or less is preferable, 3 mass% or less is more preferable, 2 mass% or less is more preferable, and 1 mass% or less is more preferable.
本開示に係る洗浄剤組成物の濃縮物中の成分Fの含有量は、樹脂マスク除去性向上及び洗浄剤組成物を安定化する観点から、50質量%以上が好ましく、60質量%以上がより好ましく、70質量%以上がさらに好ましく、そして、同様の観点から、90質量%以下が好ましく、85質量%以下がより好ましく、80質量%以下がさらに好ましい。 The content of the component F in the concentrate of the cleaning composition according to the present disclosure is preferably 50% by mass or more and more preferably 60% by mass or more from the viewpoint of improving the resin mask removability and stabilizing the cleaning composition. Preferably, 70% by mass or more is more preferable, and from the same viewpoint, 90% by mass or less is preferable, 85% by mass or less is more preferable, and 80% by mass or less is more preferable.
本開示に係る洗浄剤組成物の濃縮物のpHは、希釈後の洗浄性及び樹脂マスク除去性向上の観点から、10.0以上が好ましく、10.5以上がより好ましく、そして、希釈後の洗浄性及び金属腐食抑制の観点から、14以下が好ましく、13.5以下がより好ましく、12.0以下がさらに好ましい。 The pH of the concentrate of the cleaning composition according to the present disclosure is preferably 10.0 or more, more preferably 10.5 or more, and more preferably 10.5 or more from the viewpoint of improving the cleaning property after dilution and the resin mask removal property. From the viewpoint of detergency and suppression of metal corrosion, it is preferably 14 or less, more preferably 13.5 or less, and even more preferably 12.0 or less.
[被洗浄物]
本開示に係る洗浄剤組成物は、ドライフィルムレジスト等の樹脂マスクが付着した被洗浄物の洗浄に使用される。被洗浄物としては、例えば、電子部品及びその製造中間物が挙げられる。電子部品としては、例えば、プリント基板、ウエハ等の基板、銅板及びアルミニウム板等の金属板が挙げられる。前記製造中間物は、電子部品の製造工程における中間製造物であって、樹脂マスク処理後の中間製造物を含む。樹脂マスクが付着した被洗浄物の具体例としては、例えば、ドライフィルムレジスト等の樹脂マスクを使用した半田付けやメッキ処理(銅メッキ、ニッケルメッキ等)等の処理を行う工程を経ることにより、配線や接続端子等が基板表面に形成された電子部品等が挙げられる。
[To be cleaned]
The cleaning composition according to the present disclosure is used for cleaning an object to be cleaned to which a resin mask such as a dry film resist is attached. Examples of the objects to be cleaned include electronic components and production intermediates thereof. Examples of the electronic component include a printed board, a substrate such as a wafer, and a metal plate such as a copper plate and an aluminum plate. The said manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, Comprising: The intermediate product after a resin mask process is included. As a specific example of an object to be cleaned to which a resin mask is attached, for example, through a process of performing a soldering or plating process (copper plating, nickel plating, etc.) using a resin mask such as a dry film resist, Examples thereof include electronic components in which wiring, connection terminals, and the like are formed on the surface of the substrate.
[樹脂マスク洗浄方法]
本開示は、樹脂マスクが付着した被洗浄物を本開示に係る洗浄剤組成物に接触させることを含む、樹脂マスクの洗浄方法に関する(以下、本開示に係る洗浄方法ともいう)。本開示に係る洗浄方法は、樹脂マスクが付着した被洗浄物を本開示に係る洗浄剤組成物で洗浄する工程を有する。被洗浄物に本開示に係る洗浄剤組成物を接触させる方法、又は、被洗浄物を本開示に係る洗浄剤組成物で洗浄する方法としては、例えば、洗浄剤組成物を入れた洗浄浴槽内へ浸漬することで接触させる方法や、洗浄剤組成物をスプレー状に射出して接触させる方法(シャワー方式)、浸漬中に超音波照射する超音波洗浄方法等が挙げられる。本開示に係る洗浄剤組成物は、希釈することなくそのまま洗浄に使用できる。本開示に係る洗浄方法は、洗浄剤組成物に被洗浄物を接触させた後、水でリンスし、乾燥する工程を含むことが好ましい。本開示に係る洗浄方法であれば、ドライフィルムレジスト等の樹脂マスクを効率よく除去できる。本開示に係る洗浄方法は、本開示に係る洗浄剤組成物の洗浄力が発揮されやすい点から、本開示に係る洗浄剤組成物と被洗浄物との接触時に超音波を照射することが好ましく、その超音波は比較的強いものであることがより好ましい。前記超音波の照射条件は、同様の観点から、例えば、26〜72Hz、80〜1500Wが好ましく、36〜72Hz、80〜1500Wがより好ましい。
[Resin mask cleaning method]
The present disclosure relates to a method for cleaning a resin mask, which includes bringing an object to be cleaned attached to the resin mask into contact with the cleaning composition according to the present disclosure (hereinafter also referred to as a cleaning method according to the present disclosure). The cleaning method according to the present disclosure includes a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to the present disclosure. Examples of a method of bringing the cleaning composition according to the present disclosure into contact with an object to be cleaned or a method of cleaning the object to be cleaned with the cleaning composition according to the present disclosure include, for example, in a cleaning bath containing the cleaning composition Examples include a method of contacting by dipping, a method of injecting a cleaning composition into a spray form (shower method), an ultrasonic cleaning method of irradiating ultrasonically during immersion, and the like. The cleaning composition according to the present disclosure can be used for cleaning as it is without being diluted. The cleaning method according to the present disclosure preferably includes a step of bringing an object to be cleaned into contact with the cleaning composition, rinsing with water, and drying. With the cleaning method according to the present disclosure, a resin mask such as a dry film resist can be efficiently removed. In the cleaning method according to the present disclosure, it is preferable to irradiate ultrasonic waves when the cleaning composition according to the present disclosure and the object to be cleaned are in contact with each other because the cleaning power of the cleaning composition according to the present disclosure is easily exhibited. More preferably, the ultrasonic waves are relatively strong. From the same viewpoint, the ultrasonic irradiation conditions are preferably 26 to 72 Hz and 80 to 1500 W, and more preferably 36 to 72 Hz and 80 to 1500 W, for example.
[電子部品の製造方法]
本開示に係る電子部品の製造方法は、プリント基板、ウエハ、及び金属板から選ばれる少なくとも1つの電子部品に、樹脂マスクを使用した半田付け及びメッキ処理の少なくとも1つの処理を行う工程、及び、前記樹脂マスクが付着した電子部品を本開示に係る洗浄方法により洗浄する工程を含む。本開示に係る電子部品の製造方法は、本開示に係る洗浄方法を行うことにより、金属の腐食及び変色を抑制しながら、電子部品に付着した樹脂マスクを効果的に除去できるため、信頼性の高い電子部品の製造が可能になる。さらに、本開示に係る洗浄方法を行うことにより、電子部品に付着した樹脂マスクの除去が容易になることから、洗浄時間が短縮化でき、電子部品の製造効率を向上できる。
[Method of manufacturing electronic parts]
A method of manufacturing an electronic component according to the present disclosure includes performing at least one of soldering and plating using a resin mask on at least one electronic component selected from a printed circuit board, a wafer, and a metal plate; and The electronic component to which the resin mask is attached includes a step of cleaning by the cleaning method according to the present disclosure. The manufacturing method of the electronic component according to the present disclosure can effectively remove the resin mask attached to the electronic component while suppressing the corrosion and discoloration of the metal by performing the cleaning method according to the present disclosure. High electronic parts can be manufactured. Further, by performing the cleaning method according to the present disclosure, it becomes easy to remove the resin mask attached to the electronic component, so that the cleaning time can be shortened and the manufacturing efficiency of the electronic component can be improved.
[キット]
本開示は、本開示に係る洗浄方法及び/又は本開示に係る電子部品の製造方法に使用するためのキットであって、本開示に係る洗浄剤組成物を構成する前記成分A〜Fのうちの少なくとも1成分が他の成分と混合されない状態で保管されている、キットに関する。
[kit]
The present disclosure is a kit for use in the cleaning method according to the present disclosure and / or the method for manufacturing an electronic component according to the present disclosure, and among the components A to F constituting the cleaning composition according to the present disclosure. And at least one component of the kit is stored in an unmixed state with other components.
本開示に係るキットとしては、例えば、前記成分Aを含有する溶液(第1液)と、成分B〜Fを含有する溶液(第2液)とが、相互に混合されていない状態で保存されており、これらが使用時に混合されるキット(2液型洗浄剤組成物)が挙げられる。前記第1液及び第2液には、各々必要に応じて任意成分が含まれていても良い。該任意成分としては、例えば、増粘剤、分散剤、防錆剤、塩基性物質、界面活性剤、高分子化合物、可溶化剤、酸化防止剤、防腐剤、消泡剤、抗菌剤等が挙げられる。 As a kit according to the present disclosure, for example, a solution containing the component A (first liquid) and a solution containing the components B to F (second liquid) are stored in a state where they are not mixed with each other. And a kit (two-component detergent composition) in which these are mixed at the time of use. The first liquid and the second liquid may each contain an optional component as necessary. Examples of the optional component include a thickener, a dispersant, a rust inhibitor, a basic substance, a surfactant, a polymer compound, a solubilizer, an antioxidant, an antiseptic, an antifoaming agent, and an antibacterial agent. Can be mentioned.
以下に、実施例により本発明を具体的に説明するが、本発明はこれらの実施例によって何ら限定されるものではない。 EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.
1.洗浄剤組成物の調製(実施例1〜16及び比較例1〜13)
500mLガラスビーカーに有効分換算でモノエタノールアミン(成分A)48g、テトラメチルアンモニウムヒドロキシド(成分B)13g、ギ酸(成分C)5.7g、ジエチレングリコールモノブチルエーテル(成分D)9g、2−フェニルイミダゾール(成分E)1.5g及び水(成分F)223.8gを添加し、それを攪拌して均一に混合することにより、実施例1の洗浄剤組成物の濃縮物を調製した。そして、実施例2〜16及び比較例1〜13の洗浄剤組成物の濃縮物を、実施例1と同様の方法により、表1に示す組成で調製した。各洗浄剤組成物の濃縮物中の各成分の含有量(質量%)を表1に示した。
次に、実施例1〜16及び比較例1〜13の洗浄剤組成物の濃縮物を水で4倍に希釈することにより、下記の各評価に使用する洗浄剤組成物を得た。各洗浄剤組成物(4倍希釈後)のpHを、表1に示した。pHは、25℃における洗浄剤組成物のpHであり、pHメータ(亜電波工業株式会社、HM−30G)を用いて測定し、電極を洗浄剤組成物に浸漬した後40分後の数値である。
1. Preparation of cleaning composition (Examples 1-16 and Comparative Examples 1-13)
In a 500 mL glass beaker, 48 g of monoethanolamine (component A), 13 g of tetramethylammonium hydroxide (component B), 5.7 g of formic acid (component C), 9 g of diethylene glycol monobutyl ether (component D), 2-phenylimidazole A concentrate of the cleaning composition of Example 1 was prepared by adding 1.5 g of (Component E) and 223.8 g of water (Component F), and stirring and mixing them uniformly. And the concentrate of the cleaning composition of Examples 2-16 and Comparative Examples 1-13 was prepared by the method similar to Example 1 by the composition shown in Table 1. Table 1 shows the content (% by mass) of each component in the concentrate of each cleaning composition.
Next, the cleaning composition used for each following evaluation was obtained by diluting the concentrate of the cleaning composition of Examples 1-16 and Comparative Examples 1-13 4 times with water. The pH of each cleaning composition (after 4-fold dilution) is shown in Table 1. The pH is the pH of the cleaning composition at 25 ° C., measured with a pH meter (Awakogyo Kogyo Co., Ltd., HM-30G), and the value after 40 minutes after the electrode is immersed in the cleaning composition. is there.
洗浄剤組成物の成分として下記のものを使用した。
・モノエタノールアミン(成分A)(株式会社日本触媒製)
・モノイソプロパノールアミン(成分A)(三井化学ファイン株式会社製)
・トリエタノールアミン(非成分A)(株式会社日本触媒製)
・テトラメチルアンモニウムヒドロキシド(成分B)(昭和電工株式会社製、TMAH(25%))
・ギ酸(成分C)(株式会社朝日化学工業所製、ギ酸88%)
・酢酸(成分C)(関東化学株式会社製、鹿1級)
・蓚酸(成分C)(関東化学株式会社製、しゅう酸(無水)、鹿1級)
・イソフタル酸(非成分C)(和光純薬工業株式会社製、和光一級)
・ジエチレングリコールモノブチルエーテル(成分D)(日本乳化剤株式会社製、ブチルジグリコール(BDG))
・トリプロピレングリコールモノメチルエーテル(非成分D)(日本乳化剤株式会社製、メチルプロピレントリグリコール(MFTG))
・1−フェニルイミダゾール(成分E)(東京化成工業株式会社製)
・2−フェニルイミダゾール(成分E)(四国化成株式会社製、2PZ)
・2,4,5−トリフェニルイミダゾール(成分E)(東京化成工業株式会社製)
・1−ベンジル−2−メチルイミダゾール(成分E)(東京化成工業株式会社製)
・4−フェニルイミダゾール(非成分E)(和光純薬工業株式会社製、和光一級)
・2−フェニル−4−メチルイミダゾール(非成分E)(四国化成株式会社製、2E4MZ)
・4,5−ジフェニルイミダゾール(非成分E)(和光純薬工業株式会社製)
・2−メチルイミダゾール(非成分E)(四国化成株式会社製、2MZ−H)
・2−メルカプトベンズイミダゾール(非成分E)(東京化成工業株式会社製)
・水(成分F)(オルガノ株式会社製純水装置G−10DSTSETで製造した1μS/cm以下の純水)
The following were used as components of the cleaning composition.
・ Monoethanolamine (component A) (Nippon Shokubai Co., Ltd.)
・ Monoisopropanolamine (component A) (Mitsui Chemicals Fine Co., Ltd.)
・ Triethanolamine (non-component A) (manufactured by Nippon Shokubai Co., Ltd.)
Tetramethylammonium hydroxide (component B) (manufactured by Showa Denko KK, TMAH (25%))
Formic acid (component C) (manufactured by Asahi Chemical Industry Co., Ltd., formic acid 88%)
・ Acetic acid (component C) (Kanto Chemical Co., Ltd., deer grade 1)
・ Succinic acid (component C) (manufactured by Kanto Chemical Co., Inc., oxalic acid (anhydrous), deer grade 1)
・ Isophthalic acid (non-component C) (Wako Pure Chemical Industries, Wako first grade)
・ Diethylene glycol monobutyl ether (component D) (Nippon Emulsifier Co., Ltd., Butyl Diglycol (BDG))
Tripropylene glycol monomethyl ether (non-component D) (manufactured by Nippon Emulsifier Co., Ltd., methyl propylene triglycol (MFTG))
・ 1-Phenylimidazole (component E) (manufactured by Tokyo Chemical Industry Co., Ltd.)
2-phenylimidazole (component E) (manufactured by Shikoku Kasei Co., Ltd., 2PZ)
2,4,5-triphenylimidazole (component E) (manufactured by Tokyo Chemical Industry Co., Ltd.)
・ 1-Benzyl-2-methylimidazole (component E) (manufactured by Tokyo Chemical Industry Co., Ltd.)
・ 4-Phenylimidazole (non-component E) (Wako Pure Chemical Industries, Ltd., Wako first grade)
2-phenyl-4-methylimidazole (non-component E) (manufactured by Shikoku Kasei Co., Ltd., 2E4MZ)
・ 4,5-diphenylimidazole (non-component E) (manufactured by Wako Pure Chemical Industries, Ltd.)
2-methylimidazole (non-component E) (manufactured by Shikoku Kasei Co., Ltd., 2MZ-H)
2-mercaptobenzimidazole (non-component E) (manufactured by Tokyo Chemical Industry Co., Ltd.)
Water (component F) (pure water of 1 μS / cm or less produced with a pure water apparatus G-10DSTSET manufactured by Organo Corporation)
2.洗浄剤組成物の評価
調製した実施例1〜16及び比較例1〜13の洗浄剤組成物(4倍希釈後)の樹脂マスク除去性、金属腐食性を評価した。
2. Evaluation of cleaning composition The resin mask removability and metal corrosivity of the cleaning compositions prepared in Examples 1 to 16 and Comparative Examples 1 to 13 (after 4-fold dilution) were evaluated.
[テストピースの作製]
厚膜レジスト形成用感光性フィルム (日立化成株式会社製、フォテック HM−4075、45mm×60mm×15μm)を銅板(太佑機材株式会社製、C1100P、55mm×75mm×1mm)の表面に下記条件でラミネートして、露光処理して硬化したテストピースを作製する。
・ラミネート:クリーンローラー(株式会社レヨーン工業製、RY−505Z)及び真空アプリケータ(ローム&ハース社製、VA7024/HP5)を用いてローラー温度50℃、ローラー圧1.4Bar、処理時間30秒で行った。
・露光処理:プリント基板用直接描画装置(株式会社SCREENグラフィックアンドプレシジョンソリューションズ製、Mercurex LI−9500)を用い、露光量150mJ/cm2で露光を行った。
[Production of test pieces]
A thick film resist-forming photosensitive film (manufactured by Hitachi Chemical Co., Ltd., Photec HM-4075, 45 mm × 60 mm × 15 μm) is laminated on the surface of a copper plate (manufactured by Dazai Equipment Co., Ltd., C1100P, 55 mm × 75 mm × 1 mm) under the following conditions. Then, a test piece cured by exposure treatment is produced.
Lamination: Using a clean roller (Rayon Industries, Ltd., RY-505Z) and a vacuum applicator (Rohm & Haas, VA7024 / HP5) at a roller temperature of 50 ° C., a roller pressure of 1.4 Bar, and a processing time of 30 seconds. went.
-Exposure process: It exposed with the exposure amount of 150 mJ / cm < 2 > using the direct drawing apparatus for printed circuit boards (The product made by SCREEN Graphic and Precision Solutions, Mercurex LI-9500).
[樹脂マスク除去性評価]
50℃に加温した各洗浄剤組成物を液全体が動く程度に撹拌した状態で、テストピースを浸漬し、樹脂マスクの剥離状態を目視により観察し、樹脂マスクが完全に剥離にするまでに要した時間を剥離時間として計測した。計測結果を表1に示す。剥離時間が短いほど、樹脂マスクの除去性が高いことを示す。
[Resin mask removability evaluation]
In the state where each cleaning composition heated to 50 ° C. is stirred to such an extent that the entire liquid moves, the test piece is immersed, the state of peeling of the resin mask is visually observed, and the resin mask is completely peeled off. The time required was measured as the peeling time. Table 1 shows the measurement results. It shows that the removal property of a resin mask is so high that peeling time is short.
[金属の腐食及び変色の評価]
50℃に加温した各洗浄剤組成物50mLに、銅板(太佑機材株式会社製、C1100P、50mm×20mm×0.8mm)を浸漬し、液全体が動く程度に1時間撹拌し、洗浄剤組成物中に溶出した銅の溶解量を測定する。測定結果を表1に示す。銅の溶解量が高いほど腐食が高いことを示す。さらに、処理後の銅板の表面を目視により観察し、金属の変色の有無を評価し、その結果を表1に示す。
[Evaluation of corrosion and discoloration of metals]
A copper plate (C1100P, 50 mm × 20 mm × 0.8 mm, manufactured by Dazai Equipment Co., Ltd.) is immersed in 50 mL of each cleaning composition heated to 50 ° C., and stirred for 1 hour so that the entire liquid moves. Measure the amount of copper dissolved in the product. The measurement results are shown in Table 1. The higher the amount of copper dissolved, the higher the corrosion. Furthermore, the surface of the copper plate after a process was observed visually, the presence or absence of discoloration of a metal was evaluated, and the result is shown in Table 1.
<銅溶解量測定>
洗浄剤組成物中に溶出した銅の溶解量について、次のようにして測定する。先ず、洗浄剤組成物1gを20mL試験管(PP製)に精秤し、6N塩酸0.4gを加えて溶解して純水で10gにメスアップし測定試料を調製した。そして、測定試料中の銅の濃度をICP発光分析装置(パーキンエルマー社製、Optima5300)を用いて測定した。
<Measurement of copper dissolution>
The amount of copper dissolved in the cleaning composition is measured as follows. First, 1 g of the detergent composition was precisely weighed in a 20 mL test tube (manufactured by PP), dissolved by adding 0.4 g of 6N hydrochloric acid, and made up to 10 g with pure water to prepare a measurement sample. And the density | concentration of the copper in a measurement sample was measured using the ICP emission spectrometer (The Perkin-Elmer company make, Optima5300).
上記表1に示すとおり、実施例1〜16の洗浄剤組成物は、成分A〜Eのいずれかの成分を含まない比較例1〜13に比べて、樹脂マスク除去性に優れ、かつ、金属の腐食及び変色が抑制されていた。 As shown in Table 1 above, the cleaning compositions of Examples 1 to 16 are excellent in resin mask removability as compared with Comparative Examples 1 to 13 that do not contain any of components A to E, and metal. Corrosion and discoloration were suppressed.
本開示を用いることにより、金属の腐食及び変色を抑制しながら、樹脂マスクを効率よく除去できる。よって、本開示の洗浄剤組成物は、電子部品の製造工程で用いられる洗浄剤組成物として有用であり、樹脂マスクが付着した電子部品の洗浄工程の短縮化及び製造される電子部品の性能・信頼性の向上が可能となり、半導体装置の生産性を向上できる。 By using the present disclosure, the resin mask can be efficiently removed while suppressing corrosion and discoloration of the metal. Therefore, the cleaning composition of the present disclosure is useful as a cleaning composition used in the manufacturing process of an electronic component, shortening the cleaning process of the electronic component to which the resin mask is adhered, and the performance of the manufactured electronic component. Reliability can be improved and productivity of the semiconductor device can be improved.
Claims (7)
R8-O-(CH2CH2O)n-H (III)
上記式(III)において、R8は、炭素数3以上7以下の炭化水素基であり、nは付加モル数であって1以上5以下の整数である。
R 8 —O— (CH 2 CH 2 O) n —H (III)
In the above formula (III), R 8 is a hydrocarbon group having 3 to 7 carbon atoms, and n is an added mole number and an integer of 1 to 5.
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JP2015216276A (en) * | 2014-05-12 | 2015-12-03 | 花王株式会社 | Method for manufacturing circuit board with solder solidified, method for manufacturing circuit board with electronic component mounted thereon, and detergent composition for flux |
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JP2012046685A (en) * | 2010-08-30 | 2012-03-08 | Fujifilm Corp | Cleaning composition, cleaning method using the composition, and method of manufacturing semiconductor device |
US20130099260A1 (en) * | 2011-10-25 | 2013-04-25 | Dongwoo Fine-Chem Co., Ltd. | Resist stripping composition and method of stripping resist using the same |
JP2015079244A (en) * | 2013-09-11 | 2015-04-23 | 花王株式会社 | Detergent composition for resin mask layer and method for producing circuit board |
JP2015216276A (en) * | 2014-05-12 | 2015-12-03 | 花王株式会社 | Method for manufacturing circuit board with solder solidified, method for manufacturing circuit board with electronic component mounted thereon, and detergent composition for flux |
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