JP2016510467A - Biological imaging apparatus and related method - Google Patents

Abstract

Systems, apparatuses, and methods for authenticating individuals or users using biometric features are provided. In one aspect, for example, a system for authenticating a user by identifying at least one biometric feature is an active light source capable of emitting electromagnetic radiation having a peak emission wavelength of about 700 nm to about 1200 nm, the user's The active light source being arranged to irradiate the electromagnetic radiation to at least one biometric feature; and an infrared capture pixel arranged relative to the active light source, thereby providing the user An image sensor that receives and detects electromagnetic radiation reflected from the at least one biological feature. The system is further functionally coupled to the image sensor and operable to generate an electronic representation of at least one biometric feature of the user from the detected electromagnetic radiation, and functionally coupled to the processing module. And an authentication module that is coupled and operable to provide authentication of the user by receiving the electronic representation and comparing it to an authentication criterion of at least one biometric feature of the user. [Selection] Figure 1

Description

Priority Data This patent application claims priority to US Provisional Application No. 61 / 849,099, filed January 17, 2013, which is hereby incorporated by reference in its entirety. . This patent application is also filed with US patent application Ser. No. 13/549, filed Jul. 13, 2012, which claims priority to US Provisional Application No. 61 / 507,488, filed Jul. 13, 2011. , 107, each of which is incorporated herein by reference in its entirety.

  Biometric authentication is the study of a biological origin signature that can uniquely identify an individual. In recent years, the use of biometric authentication technology has increased, and can be classified into two groups: cooperative identification and non-cooperative identification. Coordinated biometric authentication methods obtain biometric values from personal knowledge and typically include identification of fingerprints, palm prints, and iris scans. Uncoordinated biometrics methods obtain biometrics without personal knowledge, and typically include detection of personal faces, speech, and thermal signatures. The present disclosure focuses on devices and methods that use imaging devices to detect various biometric signatures of both cooperative and non-cooperative individuals.

  Face and iris detection are two examples of biometric signatures used to identify individuals for security and authentication purposes. These detection methods generally include two independent steps: a registration phase in which biometric data is collected and stored in a database, and a query step in which unknown biometric data is compared to the database to identify an individual. In both these steps, the camera can be used to collect and capture human face and iris images. The image is processed using an algorithm that decomposes the image into a set of mathematical vectors that together constitute the individual's unique signature.

  Digital imaging devices are often used to collect image data. For example, charge-coupled devices (CCDs) are widely used in digital imaging, and have since been improved by complementary metal-oxide-semiconductor (CMOS) imaging devices with improved performance. ing. Many conventional CMOS imaging devices utilize so-called front side illumination (FSI). In such cases, electromagnetic radiation is incident on the semiconductor surface including the CMOS transistors and circuits. Backside illumination (BSI) CMOS imaging devices are also used and differ from FSI imaging devices in that electromagnetic radiation is incident on the semiconductor surface opposite the CMOS transistors and circuits.

  In biometric methods such as iris detection, to a lesser extent, facial recognition, iris, and / or skin pigmentation can affect the ability to collect robust data in both the registration and future inquiry phases. There is. Pigmentation can mask or hide unique structural elements that define the value of the mathematical vector of the signature. The ability to collect biometric data at many wavelengths, such as visible and infrared, reduces the impact of pigmentation and improves the robustness of biometric authentication methods.

  The present disclosure provides systems, devices, and methods for authenticating an individual or user by identifying biometric features, including facial features such as iris features and eye spacing. More specifically, the present disclosure is arranged to detect reflected IR radiation and an active light source capable of emitting infrared (IR) electromagnetic radiation towards an individual. A system is described having an IR sensitive image sensor and an indicator that provides a notification that the user is operating in an authentication or authorization mode. In some specific cases, 940 nm light is emitted by an active light source for use in authenticating an individual.

  In one aspect, for example, a system for authenticating a user by identifying at least one biometric feature is an active light source capable of emitting electromagnetic radiation having a peak emission wavelength of about 700 nm to about 1200 nm, the user's The active light source being arranged to emit electromagnetic radiation to irradiate at least one biometric feature; and an infrared capture pixel arranged relative to the active light source, thereby An image sensor for receiving and detecting electromagnetic radiation reflected from at least one biological feature of the user. The light capture pixel has a structural arrangement that facilitates passage of a plurality of infrared electromagnetic radiations. The system is further operatively coupled to an image sensor and operable to generate an electronic representation of the at least one biometric feature of the user from the detected electromagnetic radiation, and functional to the processing module. And an authentication module operable to provide authentication of the user by receiving an electronic representation and comparing it to an authentication criterion of the at least one biometric feature of the user, and functionally to the authentication module And an authentication indicator operable to notify that the user has actually been authenticated. The authentication indicator can provide notifications to various entities including, but not limited to, users, system operators, electronic systems, targeted observers, and the like.

  Various image sensors and image sensor configurations are envisioned, and any image sensor capable of detecting sufficient infrared electromagnetic radiation to function is considered within this range, as described herein. . In one aspect, for example, the image sensor can be a CMOS image sensor. In another aspect, the image sensor includes a semiconductor element layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a texture arranged to interact with reflected electromagnetic radiation. A front-illuminated image sensor including a region, the image sensor having an external quantum efficiency of at least about 20% for electromagnetic radiation having at least one wavelength greater than 900 nm. In yet another aspect, the image sensor is arranged to interact with the reflected electromagnetic radiation, the semiconductor element layer having a thickness of less than about 10 microns, at least two doped regions forming the junction. A front-illuminated image sensor comprising a texture region, the image sensor having an external quantum efficiency of at least about 30% for electromagnetic radiation having at least one wavelength greater than 900 nm. In a further aspect, the image sensor includes a semiconductor element layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region disposed to interact with reflected electromagnetic radiation. The image sensor has an external quantum efficiency of at least about 40% for electromagnetic radiation having at least one wavelength greater than 900 nm. In a further aspect, the image sensor includes a semiconductor element layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region disposed to interact with reflected electromagnetic radiation. The image sensor has an external quantum efficiency of at least about 50% for electromagnetic radiation having at least one wavelength greater than 900 nm. Further, in some aspects, the image sensor is also capable of detecting electromagnetic radiation having a wavelength of about 400 nm to about 700 nm, the image sensor having an external quantum efficiency greater than 40% at 550 nm. Please note that.

In another aspect, the image sensor has a background irradiance of less than about 5 uW / cm ² having at least one wavelength of about 700 nm to about 1200 nm and acting on a user with a maximum separation distance up to about 24 inches. Electromagnetic radiation emitted from an active light source can be used to capture reflected electromagnetic radiation with sufficient detail to facilitate user authentication. In yet another aspect, the image sensor is from an active light source having a peak emission wavelength of about 940 nm and a background irradiance of less than about 5 uW / cm ² that acts on the user with a maximum separation of about 18 inches. The emitted electromagnetic radiation can be used to capture the reflected electromagnetic radiation with sufficient detail to facilitate user authentication.

Furthermore, a variety of active light sources are envisioned, and any active light source capable of emitting sufficient infrared electromagnetic radiation to function is considered within the scope, as described herein. In one embodiment, for example, the active light source can have a peak emission wavelength of about 850 nm to about 1100 nm. In other embodiments, it can have a peak emission wavelength of about 940 nm. In a further aspect, the active light source can produce electromagnetic radiation having an intensity of at least 0.1 mW / cm ² at 940 nm. The active light source can operate in a continuous mode, a strobe mode, a user activated mode, an authentication activated mode, a structured light mode, or a combination thereof. In some embodiments, the active light source can include two or more active light sources that each emit electromagnetic radiation at different peak emission wavelengths. In one example, two or more active light sources can emit electromagnetic radiation from about 850 nm to about 940 nm. In other examples, the system can determine if there is sufficient ambient light at 850 nm or 940 nm so that the active light source does not need to be used, and therefore the active light source is activated as needed. There is no need.

  In other aspects, the system can further include a synchronization element operatively coupled between the image sensor and the active light source, the synchronization element being radiated by the active light source and reflected by the image sensor. It is possible to synchronize the capture of the emitted electromagnetic radiation. Non-limiting examples of the synchronization element can include circuitry configured to synchronize the image sensor and the active light source, software, or a combination thereof.

  In other aspects, the system can include a processor element that enables subtractive background ambient illumination by comparing an image frame of the instant when the active light source is not active with an image when the active light source is active.

  It should be understood that various physical configurations for a system according to aspects of the present disclosure are envisioned and that the present disclosure is not limited to merely those configurations disclosed herein. In one aspect, for example, at least the active light source, the image sensor, the processing module, and the authentication indicator can be incorporated into the electronic device. Non-limiting examples of such electronic devices include handheld electronic devices, mobile phones, smartphones, tablet computers, personal computers, automated teller machines (ATMs), kiosks, credit card terminals, cash registers, televisions, A video game console, or a suitable combination thereof, can be included. In one particular aspect, the image sensor can be incorporated into a camera module in front of a cameo or electronic device.

  The present disclosure further provides a method for authorizing a user by an electronic device to use secure resources. Such a method is the step of irradiating the user with electromagnetic radiation from an active light source in the electronic device to reflect the electromagnetic radiation from at least one biological feature of the user, the electromagnetic radiation being about The step of irradiating having a peak emission wavelength of 700 nm to about 1200 nm and the step of detecting electromagnetic radiation reflected in an image sensor disposed in the electronic device may be included. The image sensor includes an infrared capture pixel disposed with respect to the active light source so that it can receive and detect electromagnetic radiation reflected from at least one biometric feature of the user; The capture pixel can have a structural arrangement that facilitates the passage of a plurality of infrared electromagnetic radiation. The method further includes generating an electronic representation of at least one biometric feature of the user from the reflected electromagnetic radiation, and comparing the electronic representation with an authentication criterion for the at least one biometric feature of the user. Authenticating as an authenticated user, and authorizing the authenticated user to use at least a portion of the secure resource. In some aspects, the method can also include notifying the user that authorization is successful and the authorization state is active.

  For a more complete understanding of the nature and advantages of the present invention, reference should be made to the following detailed description of preferred embodiments taken in conjunction with the accompanying drawings.

FIG. 1 is a diagram of a system for authenticating a user according to one aspect of the present disclosure. FIG. 2 is a diagram of a system for authenticating a user according to one aspect of the present disclosure. FIG. 3 is a diagram of a system for authenticating a user according to one aspect of the present disclosure. FIG. 4 is a diagram of a system for authenticating a user according to one aspect of the present disclosure. FIG. 5 is an illustration of an electronic device for authenticating a user according to one aspect of the present disclosure. FIG. 6 is a flow diagram of a method according to another aspect of the present disclosure. FIG. 7 is a graphical representation of spectral irradiance versus wavelength for solar radiation. FIG. 8 is a representation of a light capture pixel according to one aspect of the present disclosure. FIG. 9 is a representation of an image sensor pixel according to one aspect of the present disclosure. FIG. 10 is a representation of an image sensor pixel according to one aspect of the present disclosure. FIG. 11 is a representation of an image sensor pixel according to one aspect of the present disclosure. FIG. 12 is a representation of an image sensor array according to one aspect of the present disclosure. FIG. 13 is a schematic diagram of a six-transistor image sensor according to another aspect of the present disclosure. FIG. 14 a is a photograph showing an iris imaged by a photographic imaging device having a roll shutter according to another aspect of the present disclosure. FIG. 14 b is a photograph showing an iris imaged by a photographic imaging device having a global shutter according to another aspect of the present disclosure. FIG. 15 is a diagram of time-of-flight measurement according to another aspect of the present disclosure. FIG. 16a is a schematic diagram of an image configuration for a photographic imaging device array according to another aspect of the present disclosure. FIG. 16b is a schematic diagram of an image configuration for a photographic imaging device array according to another aspect of the present disclosure. FIG. 16c is a schematic diagram of an image configuration for a photographic imaging device array according to another aspect of the present disclosure. FIG. 17 is a schematic diagram of eleven transistor image sensors according to another aspect of the present disclosure. FIG. 18 is a schematic diagram of an image configuration for a photographic imaging device array according to another aspect of the present disclosure. FIG. 19 is a representation of an integrated system for identifying individuals according to one aspect of the present disclosure.

  Before the present disclosure is described herein, the present disclosure is not limited to the specific structures, process steps, or materials disclosed herein, and is recognized by those skilled in the relevant art. It should be understood that it extends to its equivalent. It is also to be understood that the terminology used herein is used for the purpose of describing particular embodiments only and is not intended to be limiting.

Definitions The following terms are used in accordance with the definitions set forth below.

  It should be noted that the singular forms “a” and “the” include plural subjects as used herein and in the appended claims, unless the context clearly indicates otherwise. Thus, for example, reference to “a dopant” includes one or more of such dopants, and reference to “the layer” refers to one or more of such layers. Including the reference.

  As used herein, the terms “electromagnetic radiation” and “light” can be used interchangeably, visible wavelength (about 350 nm to 800 nm) and invisible wavelength (greater than about 800 nm or Wavelengths can be expressed over a wide range, including shorter than 350 nm. The infrared spectrum is most often the near-infrared portion of the spectrum including wavelengths from about 800-1300 nm, the short-wave infrared portion of the spectrum including wavelengths from about 1300 nm to 3 micrometers, and about 3 up to about 30 micrometers. It is described as including a mid- and long-wavelength infrared (or thermal infrared) portion of the spectrum that includes wavelengths in excess of micrometers. These are generally and collectively referred to herein as the “infrared” portion of the electromagnetic spectrum, unless otherwise noted.

  As used herein, “shutter speed” refers to the duration of a camera shutter that remains open while an image is captured. The shutter speed is directly proportional to the exposure time, ie the duration of light reaching the image sensor. In other words, the shutter speed controls the amount of light that reaches the photosensitive image sensor. The slower the shutter speed, the longer the exposure time. The shutter speed is generally expressed in seconds and fractions of seconds. For example, 4, 2, 1, 1/2, 1/4, 1/8, 1/15, 1/30, 1/60, 1/125, 1/250, 1/500, 1/1000, 1 / 2000, 1/4000, 1/8000. Each time the speed increases, the amount of light incident on the image sensor is halved.

  As used herein, “active light source” refers to light generated by a device or system for the purpose of authenticating a user.

  As used herein, the term “detection” refers to the sensing, absorption, and / or collection of electromagnetic radiation.

  As used herein, the term “background irradiance” refers to the light density acting on a known area or background.

  As used herein, a “secure resource” can include any resource that requires authentication for the accessing user. Non-limiting examples can include websites, remote servers, local data, local software access, financial data, high security data, databases, financial transactions, and the like.

  As used herein, the term “textured region” refers to a surface having a topology with nano to micron sized surface changes. Such surface topologies include, but are not limited to, irradiation with one laser pulse or multiple laser pulses, chemical etching, lithographic patterning, interference of multiple simultaneous laser pulses, reactive ion etching, and the like. It can be formed by any suitable technique. Although the characteristics of such surfaces can be variable depending on the materials and techniques used, in one embodiment, such surfaces can be hundreds of nanometers thick and nanocrystalline. (Eg, about 10 to about 50 nanometers) and nanopores. In other embodiments, such surfaces can include micron-sized structures (eg, about 0.5 μm to about 10 μm). In yet other embodiments, the surface can include nano-sized and / or micron-sized structures of about 5 nm to about 10 μm. In other embodiments, such surfaces are composed of nano-sized and / or micron-sized structures from 100 nm to 1 μm. In other embodiments, the surface structure is nano-sized and / or micron-sized with a height of about 200 nm to 1 um and a peak spacing of about 200 nm to 2 μm. It should be mentioned that the texture region can be ordered or disordered, can have a local order of a long range of order, or can have a repeating pattern of disordered structure. .

  As used herein, the terms “surface modify” and “surface modification” refer to changes in the surface of a semiconductor material using various surface modification techniques. Non-limiting examples of such techniques include lithographic patterning, plasma etching, reactive ion etching, porous silicon etching, laser, chemical etching (eg, anisotropic etching, isotropic etching), nanoimprint, material deposition, Including selective epitaxial growth, and combinations thereof. In one particular embodiment, the surface modification can include forming nano-sized and / or micron-sized features on the surface of a semiconductor material such as silicon. In one particular aspect, surface modification can include a process that primarily uses laser radiation to form nano-sized and / or micron-sized features on the surface of a semiconductor material such as silicon. In one particular embodiment, the surface modification can include a process that primarily uses laser radiation or laser radiation in combination with a dopant, whereby the laser radiation can incorporate dopant into the surface of the semiconductor material. Make it easy. Thus, in one aspect, the surface modification includes doping a substrate such as a semiconductor material.

  As used herein, the term “target region” refers to a region of a substrate that is intended to be doped, textured, or surface modified. As the surface modification process proceeds, the target area of the substrate can be changed. For example, after the first target region is doped or surface modified, the second target region can be selected on the same substrate.

  As used herein, the term “substantially” refers to a complete or nearly complete range or degree of operation, property, property, state, structure, item or result. For example, an object that is “substantially” enclosed means that the object is either completely enclosed or almost completely enclosed. The exact tolerance of deviation from absolute completeness may depend on the particular context. In general, however, stating the closeness of completion will have the same overall result as if absolute and overall completion were obtained. The use of “substantially” is equally applicable when used in a negative sense to refer to a complete or nearly complete behavior, property, nature, state, structure, item or lack of results. is there. For example, a composition that is “substantially free” of particles is either completely devoid of particles or is almost completely devoid of particles so that the effect is the same as if it were completely devoid of particles. Either. In other words, a composition “substantially free of” an ingredient or element may still actually contain such an item, unless it has a measurable effect.

  As used herein, the term “about” is intended to provide flexibility to the endpoints of a numerical range by providing that the specified value can be “slightly above” or “slightly below” endpoints. Used for.

  As used herein, multiple items, structural elements, compositional elements, and / or materials may be presented in a common list for convenience. However, these lists should be interpreted as if each member of the list is identified as an independent unique member. Thus, individual members of such a list should not be construed as merely equivalent in nature to any other member of the same list based on their presentation in a common group without the opposite indication.

  Concentrations, amounts, and other numerical data may be expressed or presented herein in a range format. Such range formats are used merely for convenience and brevity and are therefore not limited to the numerical values specified as range limits, but to each individual as if each numerical value and sub-range were specified. It should be understood that it should be construed flexibly to include numerical values or subranges subsumed within that range. By way of example, a numerical range of “from about 1 to about 5” is interpreted to include not only explicitly listed values from about 1 to about 5, but also individual values and subranges within the indicated range. It should be. Accordingly, this numerical range includes individual values such as 2, 3, and 4, sub-ranges such as 1 to 3, 2 to 4, 3 to 5, and 1, 2, 3, individually. 4 and 5.

  This same principle applies to ranges that enumerate only one numerical value as a minimum or maximum value. Furthermore, such an interpretation should apply regardless of the breadth of the range or characteristics described.

Disclosure Secure and robust identification of individuals, especially those individuals who use or attempt to access some form of secure resources or perform financial transactions, many companies, communities, governments, financial institutions, e-commerce, etc. Is the top priority. For example, accurate authentication of individuals through imaging of biometric features can enable numerous activities such as financial transactions, access to computers and electronic devices, airlines and other transportation, and access to secure locations. it can.

  As described, one problem inherent in biometric systems that image iris features and other facial features is interference due to pigmentation. In order to reduce this potential interference, a biological imaging device that captures light wavelengths (near infrared) in the range of 800 nm to 1300 nm can be used. The pigmentation of the iris in this wavelength range is substantially transparent, so that photons are transmitted through the pigment and reflected from the structural element of interest for identification, such as the mesenchymal structure in the iris.

  CCDs and CMOS image sensors are based on silicon as a photosensitive material and usually have low sensitivity to near infrared light in the wavelength range of interest. As such, the biometric authentication system tends to degrade when attempting to capture an iris signature from a predetermined distance, eg, greater than 18 inches, and / or with a short integration time. In biometric authentication systems using these types of image sensors, it is necessary to increase the intensity of the emitted infrared light in order to compensate for the low sensitivity to near infrared rays. In portable electronic devices, radiating with increased near infrared intensity results in rapid power consumption and reduces battery life. Reducing the amount of light emitted in a portable system is desirable to reduce power consumption. Higher intensity infrared light is also undesirable because it can damage eye tissue at close range. Furthermore, depending on the wavelength, near-infrared light emitting diodes become visible to the human eye when the intensity is sufficiently high, which is undesirable for aesthetic reasons.

  The present disclosure includes an active light source capable of emitting infrared (IR) electromagnetic radiation towards an individual, an IR-sensitive image sensor arranged to detect reflected IR radiation, and a user authentication or authorization mode A system having an indicator, such as an authentication indicator, that provides notification that it is operating. The present disclosure can also operate in low light conditions with excellent signal-to-noise ratio and high quantum efficiency in the visible and infrared (IR) spectrum, and reduces the minimum amount of infrared light emitted to function. An efficient biometric authentication device is provided. Using an IR light source, in contrast to purely visible light, the system can, in some aspects, image unique biometric features, including iris texture patterns, to facilitate identification, Variation in light can be eliminated, and pattern interference from face and corneal reflection can be reduced, whereby more accurate facial feature information can be acquired.

  In one aspect, as shown, for example, in FIG. 1, a system for authenticating a user by identifying at least one biometric feature emits electromagnetic radiation 104 having an infrared peak emission wavelength (including near infrared). An active light source 102 can be included. The active light source 102 is arranged to emit electromagnetic radiation 104 and acts on at least one feature 106 of the user 108. The system can further include an image sensor 110 having infrared capture pixels positioned relative to the active light source to receive and detect electromagnetic radiation 112 reflected from at least one facial feature 106 of user 108. . In some aspects, the image sensor may be an IR enhanced detection sensor. The processing module 114 is operatively coupled to the image sensor 110 and is operable to generate an electronic representation of at least one biometric feature 106 of the user 108 from the detected electromagnetic radiation. Further, the authentication module 116 is functionally coupled to the processing module 114 and receives the electronic representation and compares the electronic representation with the authentication criteria 118 of the at least one biometric feature 106 of the user 108 to authenticate the user 108. It is operable to authenticate. The housing 120 is envisioned to support various elements of the system in some aspects. However, it should be noted that the physical configuration of such a housing should not be considered limiting, with or without specific elements being physically located within the housing.

  In some aspects, as shown in FIG. 2, the system can include an authentication indicator 202 operatively coupled to the authentication module 116. Accordingly, the authentication indicator 202 can provide a notification that the user 108 has been authenticated by the system. In some aspects, the indicator may notify the user when the device is operating in secure mode or non-secure mode. A wide variety of authentication indicators and indicator functions are envisioned and any indicator that provides such notification is considered within the scope. The nature of the indicator can also vary depending on the physical nature of the system or electronic device utilized. For example, in some aspects, the indicator can be a dedicated indicator such as an LED, audible signal, and the like. In other aspects, the indicator is a change or variation in the electronic screen, in some aspects other sets of such menus for authenticated users, or in other aspects, a lock or dollar sign indicating secure mode It can be a symbol such as an icon or the appearance of an icon. The indicator can also include a change in the physical state of the object, such as opening a door, gate, or other barrier. Thus, the authentication indicator 202 can be located within the housing 120 as shown in FIG. 2 or physically linked to the main elements of the system, or the indicator can be located away from the system / housing. Can be remotely activated. Note that for FIG. 2 and subsequent figures, the callout item numbers from the previous figure (eg, FIG. 1) are intended to incorporate the description from the description of these figures. In these cases, the item may or may not be described or explained again, and the previous description applies to the appropriate scope.

  In another aspect, as shown in FIG. 3, the system further includes an image sensor 110 and an active light source to synchronize the emission of electromagnetic radiation by the active light source 102 and the capture of electromagnetic radiation reflected by the image sensor 110. A synchronization element 302 operatively coupled to 102 can be included. Further, in some aspects, synchronization can be handled by other elements in the system, such as an image sensor processor. The signal-to-noise ratio of the system can therefore be improved by matching the emission of electromagnetic radiation with the capture of reflected electromagnetic radiation. In some aspects, the synchronization element 302 can independently control the radiation duty cycle of the active light source 102 and the capture duty cycle of the image sensor 110, thus allowing for adjustment of capture for radiation. For example, variable delays in reflected electromagnetic radiation due to changes in the distance from the active light source to the user can be compensated by adjusting the timing and / or width of the image sensor acquisition window. It is envisioned that the synchronization element can include physical electronic devices and circuits, software, or a combination thereof to facilitate synchronization.

  In another aspect, a system for authenticating a user against a secure resource is provided. A secure resource can be the device itself, access to a specific part of the device, data collection, a website, a remote server, and so on. Such a system can include elements as described above including equivalents to authenticate a user. As shown in FIG. 4, such a system can further include an authorization module 402 operatively coupled to the authentication module 116. The authorization module 402 is operable to verify that authentication of the user 108 has occurred and to allow access to at least a portion of the secure resource 404 based on the authentication. Authenticated user authorization may allow different levels of access to secure resources depending on the authenticated individual. In other words, different types of users can have different permission levels after authentication. For example, users of secure resources will likely need to have low access to secure resources compared to administrators.

  The interaction and physical relationship of secure resources, authorization modules and authentication systems can vary depending on the design of the system and secure resources, and such changes are considered to be within this scope. Referring to FIG. 4, for example, the authorization module 402 is shown at a different location from the authentication module 116. This can be applied to some aspects, but envisaged are modules that are arranged in close proximity to each other or that are more integrated, for example on-chip integration. When the system is placed in an electronic device, for example, at least one of an authentication module or an authorization module can be placed inside it. In other aspects, at least one of the authentication module or the authorization module can be located in a secure resource. In other aspects, the secure resource is physically separated and can be different from the electronic device, while in other aspects, the secure resource can be located in the electronic device. This latter may be the case for a protected database or other protected information stored locally on the device. Thus, the present disclosure contemplates that the system components can be physically integrated into one piece or separated as needed. In other aspects, the secure resource may be a gateway to a remote secure resource. One example of a remote secure resource includes a financial system. In such a case, the user's authority may allow the user to be verified in a financial transaction. Other examples of remote secure resources include a database of unique personal biometric signatures. In such cases, after being identified from a large personal database, the user can be given or denied access to resources such as airplanes, buildings, or travel destinations.

  The degree of integration can also be reflected in the physical design of the system and / or system elements. The various functional modules can be integrated to varying degrees with each other and / or other elements associated with the system. In one aspect, for example, at least one of the authentication module or the authorization module can be monolithically integrated with the image sensor. In some cases, such integration can be separated from the CPU of the electronic device. In one aspect, the system can be integrated into a portable electronic device.

  As mentioned above, the system can be incorporated into the physical structure in various ways. In one aspect, for example, at least the active light source, the image sensor, the processing module, and the authentication indicator are integrated into the electronic device. In other embodiments, at least the active light source, the image sensor, and the processing module are integrated into the electronic device. It is envisioned that the system can be integrated into a wide variety of electronic devices that will vary depending on the nature of the secure resources and / or electronic devices that provide authentication / authorization. Non-limiting examples of such devices include handheld electronic devices, portable electronic devices, mobile phones, smartphones, tablet computers, personal computers, automated teller machines (ATMs), kiosks, credit card terminals, televisions, video game consoles. Etc., and combinations thereof as necessary. FIG. 5 shows a non-limiting example of the smartphone 502. In this case, the smartphone 502 includes an authentication system incorporated therein, most of which is not shown. The smartphone includes a visual display 504 and, in this case, a cameo camera 506 with an embedded image sensor, as described. In this case, the user can activate the authentication system, can line up the image of the user's face captured by the cameo camera 506 on the visual display 504, and can continue authentication by the system. In some aspects, an authentication indicator 508 can be incorporated into the device to provide notification to a user who is in secure or non-secure mode. In some aspects, such notification can also be provided by screen 504. Note that although a smartphone cameo camera is used in this example, a non-cameo camera / imaging device associated with the smartphone or any other electronic device is available as well. In one aspect, a cameo camera dedicated to biometric or gesture authentication and an additional camera module can be included on the smartphone. Further, in some aspects, a stand-alone camera can be integrated into an apparatus or system as shown in FIG. 5, along with the Internet or a local network system. In some aspects, the additional biometric camera module can include a filter or filters that remove any light except a small range of near infrared wavelengths.

  The present disclosure further provides a method for authorizing a user by an electronic device to use secure resources. In one aspect, as shown in FIG. 6, for example, such a method includes irradiating a user with electromagnetic radiation having a peak emission wavelength of about 700 nm to about 1200 nm from an active light source in an electronic device, The step of reflecting 602 the electromagnetic radiation from at least one biometric feature of the user; and the step of detecting 604 the electromagnetic radiation reflected by an image sensor disposed within the electronic device. Here, the image sensor includes an infrared capture pixel disposed with respect to the active light source, whereby electromagnetic radiation reflected from at least one biological feature of the user is received and detected. The light capture pixel has a structural arrangement that facilitates passage of a plurality of infrared electromagnetic radiation. The method also generates 606 an electronic representation of at least one biometric feature of the user from the reflected electromagnetic radiation, and authenticates the user by comparing the electronic representation with an authentication criterion of the at least one biometric feature of the user. Authenticating as 608 and authorizing 610 the use of at least a portion of the secure resource by the authenticated user. In other aspects, the method can include providing a notification to the user that authorization is successful and the authorization state is active. Further, in some aspects, the method includes periodically authenticating the user during use of the secure resource, or in other aspects, continuously authenticating the user during use of the secure resource. It is envisioned that it can be included.

A variety of active light sources are envisioned and any light source capable of emitting IR light is considered within this range. In one aspect, for example, the active light source can emit electromagnetic radiation having a peak emission wavelength of about 700 nm to about 1200 nm. In other embodiments, the active light source can emit electromagnetic radiation having a peak emission wavelength greater than about 900 nm. In yet another aspect, the active light source can emit electromagnetic radiation having a peak emission wavelength of about 850 nm to about 1100 nm. In a further aspect, the active light source can emit electromagnetic radiation having a peak emission of about 940 nm. It is particularly beneficial to utilize light having a wavelength around 940 nm to reduce the amount of background light incident from the solar spectrum. The wavelength of light at 940 nm is filtered to some extent from the solar spectrum by atmospheric moisture. Therefore, background noise in this wavelength region is reduced when ambient light includes sunlight. As shown in FIG. 7, there is a region where the solar spectrum is filtered, and the background spectral irradiance is low at 940 nm. By utilizing an active light source that emits at about 940 nm, it is possible to improve the signal-to-noise ratio of the system and increase the efficiency of authentication, and to reduce the intensity of the active light source to save power. And the functionality in outdoor situations can be improved. In one particular aspect, the active light source can generate electromagnetic radiation having an intensity of at least about 0.1 mW / cm ² at 940 nm for effective authentication.

  The active light source can be operated in various modes depending on the imaging and / or authentication method used. For example, the active light source can operate in a continuous manner, a strobe mode, a user-activated mode, an authentication-activated mode, a specific patterned mode, or a combination thereof. As described above, the active light source can be activated intermittently in response to the imaging duty cycle. In an aspect where continuous authentication is desired during access to a secure resource, the active light source can emit light continuously through access to the secure resource, can emit light intermittently, etc. is there.

  Referring to the image sensor, the structure and design can be varied depending on the nature of the device in which the image sensor is incorporated and on various system design parameters. As described above, the image sensor can include light capture pixels having a structural arrangement that facilitates the passage of a plurality of infrared electromagnetic radiation. As one example, FIG. 8 shows a pixel having a device layer 802 and a doped or junction region 804. The pixel is further shown having a textured region 806 coupled to the side of the device layer 802 opposite the doped region 804. Any part of the pixel can be textured depending on the image sensor design. FIG. 8 also shows a side light reflection region 808 demonstrating further light capture capabilities. The light reflecting region (808) may be a textured region, a mirror, a Bragg reflector, a filled trench structure, or the like. Light 810 is also shown to interact with the element layer 802 of the pixel. The textured and reflective areas (either 806 or 808) reflect light back to the element layer 802 when contacted, as shown at 812. In some aspects, 806 and / or 808 can be a trench isolation element for isolating pixels in the image sensor device. Therefore, light is captured by the pixel, facilitating further detection as reflected light 812 returns through the pixel. In addition, the trench isolation element can capture photoelectrons in the pixel, facilitating crosstalk reduction and high modulation transfer function (MTF) in the image sensor. Note that the interaction with the texture region can cause light to be reflected, scattered, diffused, etc. to increase the light path. This can be achieved by any element that can scatter light. In other embodiments, mirrors, Bragg reflectors, etc. can be utilized in addition to or instead of the textured region.

  FIG. 9 illustrates one exemplary embodiment of a front-illuminated image sensor device that is operable in low light conditions with excellent signal to noise ratio and high quantum efficiency in the visible and infrared light spectrum. . Image sensor device 900 includes a semiconductor element layer 902 having a thickness of less than about 10 microns, at least two doped regions 904, 906 that form a junction, and a texture arranged to interact with incident electromagnetic radiation 910. Region 908. In other aspects, the thickness of the semiconductor device layer 902 can be less than 5 microns. In other embodiments, the element layer thickness can be less than 7 microns. In yet another aspect, the element layer thickness can be less than 2 microns. The lower limit of the thickness of the element layer can be any thickness that allows the functionality of the device. In one embodiment, however, the device layer can be at least 10 nm thick. In other embodiments, the device layer can be at least 100 nm thick. In yet another aspect, the device layer can be at least 500 nm thick.

  In one aspect, such a front-illuminated image sensor can have an external quantum efficiency of at least about 20% for electromagnetic radiation having at least one wavelength greater than 900 nm. In other aspects, the image sensor can have an external quantum efficiency of at least about 25% for electromagnetic radiation having at least one wavelength greater than 900 nm. In other aspects, the external quantum efficiency of such devices can be at least 30%, at least 35%, or at least 40% for one wavelength greater than 900 nm. Note that the described quantum efficiencies can also be achieved in some embodiments at a wavelength of about 940 nm. In other embodiments, a wavelength of 850 nm is available for these quantum efficiencies.

  An apparatus according to aspects of the present disclosure can include an optically active semiconductor element layer, a circuit layer, a support substrate, and the like. In some aspects, the semiconductor device layer can be a silicon device layer. FIG. 10 shows a similar image sensor for backside illumination. Image sensor device 1000 includes a semiconductor element layer 1002 having a thickness of less than about 10 microns, at least two doped regions 1004, 1006 forming a junction, and a texture arranged to interact with incident electromagnetic radiation 1010. Region 1008. In other aspects, the thickness of the semiconductor device layer 1002 can be less than 7 microns. In other embodiments, the thickness of the device layer can be less than 5 microns. In yet another aspect, the element layer thickness can be less than 2 microns. The lower limit of the thickness of the element layer can be any thickness that allows the functionality of the device. In one embodiment, however, the device layer can be at least 10 nm thick. In other embodiments, the device layer can be at least 100 nm thick. In yet another aspect, the device layer can be at least 500 nm thick.

  In one aspect, such a back-illuminated image sensor can have an external quantum efficiency of at least about 40% for electromagnetic radiation having at least one wavelength greater than 900 nm. In other aspects, the image sensor can have an external quantum efficiency of at least about 50% for electromagnetic radiation having at least one wavelength greater than 900 nm. In other aspects, the external quantum efficiency of such devices can be at least 55%, at least 60%, or at least 65% for one wavelength greater than 900 nm. Note that the described quantum efficiencies can also be achieved in some embodiments at a wavelength of about 940 nm.

  A number of configurations are envisioned and any type of junction configuration is considered within the scope. For example, the first and second doped regions can be different from each other, can be in contact with each other, can overlap each other, and so forth. In some cases, the intrinsic region can be at least partially disposed between the first and second doped regions. Further, in some embodiments, the semiconductor element layer can be disposed on a semiconductor on a bulk semiconductor layer or a semiconductor support layer or an insulating layer.

  Note that a texture region can be associated with the entire surface of a semiconductor (eg, silicon) material or only a portion thereof. Further, in some aspects, the texture region can be specifically arranged to maximize the absorption path length of the semiconductor material. In other aspects, a third dope can be included near the texture region to improve the collection of carriers generated near the texture region.

  Further details regarding such photosensitive elements are described in US patent application Ser. No. 13 / 164,630, filed Jun. 20, 2011, which is hereby incorporated by reference in its entirety.

  Furthermore, whether it is front-illumination or back-illumination, the texture region can be located on the side of the semiconductor element layer opposite to the incident electromagnetic radiation. The texture region can also be located on the side of the semiconductor device layer adjacent to the incident electromagnetic radiation. In other words, in this case, the electromagnetic radiation contacts the texture region before passing through the semiconductor element layer. Further, it is envisioned that the texture region can be disposed on both the opposite side and the adjacent side of the semiconductor element layer.

  The semiconductor utilized to construct the image sensor can be any useful semiconductor material in which such an image sensor can be configured with the characteristics described herein. In one embodiment, however, the semiconductor device layer is silicon. However, it should be noted that silicon photodetectors are limited in their ability to detect the IR wavelength of light, particularly in the case of thin film silicon devices. Conventional silicon devices require a significant absorption depth to detect photons having wavelengths longer than about 700 nm. Visible light can be easily absorbed in the first few microns of silicon layer, but absorption in longer wavelength (eg,> 900 nm) silicon at thin wafer depths (eg, about 20 μm) is insufficient. is there. The image sensor device can increase the absorption of electromagnetic radiation in a thin layer of silicon.

  Texture regions can increase absorption of the image sensor, improve external quantum efficiency, and reduce response time and delay, especially at near infrared wavelengths. Such a unique and novel device allows for a high shutter speed, thereby enabling imaging of moving objects in low light scenarios. Increased near-infrared sensitivity in silicon-based devices can reduce the power required in the active light source and can increase the distance that the device can capture accurate personal biometrics.

While it is envisioned that the system can include an optical system to increase the imaging distance between the device and the individual, image sensor devices with textured regions are low even when the system is relatively long distance Allows functioning at IR light intensity levels. This reduces energy consumption and thermal management issues, increases the battery life of the portable device, and potentially reduces side effects that may arise from high intensity IR light. In one aspect, for example, the image sensor device has a background radiation of less than about 5 uW / cm ² having at least one wavelength of about 700 nm to about 1200 nm and acting on an individual at a distance of about 12 inches to about 24 inches. Electromagnetic radiation emitted from an active light source with illumination can be used to image an electronic representation of an individual with sufficient detail to identify substantially unique facial features. In another aspect, the image sensor device is from an active light source having at least one wavelength of about 700 nm to about 1200 nm and having a background irradiance of less than about 5 uW / cm ² acting on an individual at a distance of about 18 inches. The emitted electromagnetic radiation can be used to image an electronic representation of an individual with sufficient detail to identify substantially unique facial features. In yet another aspect, the image sensor device has a background radiation of about 1 uW / cm ² to about 100 uW / cm ² having at least one wavelength of about 800 nm to about 1000 nm and acting on an individual at a distance of about 18 inches. Electromagnetic radiation emitted from an active light source with illumination can be used to image an electronic representation of an individual with sufficient detail to identify substantially unique facial features. In yet another aspect, the image sensor device has a background irradiance acting on an individual at about 18 inches having at least one wavelength from about 800 nm to about 1000 nm and from about 1 uW / cm ² to about 10 uW / cm ^2. Electromagnetic radiation emitted from an active light source can be used to image an electronic representation of an individual with sufficient detail to identify substantially unique facial features.

  As described above, in some aspects, the thickness of the silicon material of the device can determine sensitivity and response time. Standard silicon devices need to be thick, ie, greater than 50 μm, to detect wavelengths that fall into the near-infrared spectrum, and detection with such thick devices results in slow response and high dark current . The texture region is arranged to interact with electromagnetic radiation to increase the absorption of infrared light in the device, thereby improving infrared sensitivity while allowing high speed operation. Diffuse scattering and reflection can result in increased path length for absorption, especially when combined with total internal reflection, greatly improving infrared responsiveness for silicon pixels, photodetectors, pixel arrays, image sensors, etc. Bring. The increase in absorption path length makes it possible to absorb electromagnetic radiation in the infrared region using a thin silicon material. One advantage of a thin silicon material device is that charge carriers are swept from the device more quickly, thus reducing response time. Conversely, thick silicon material elements sweep charge carriers therefrom more slowly, at least partially by diffusion.

  However, the semiconductor element layer can be of any thickness that allows for the detection and conversion function of electromagnetic radiation, and therefore the thickness of any such semiconductor element layer is considered to be within this range. Please note that. As discussed above, thin silicon layer materials can be particularly beneficial in reducing response time and bulk dark current generation. As described above, charge carriers can be swept more quickly from a thin silicon material layer than from a thicker silicon material layer. Thin silicon, few materials, electrons / holes must be traversed in order to be collected, and the probability of generated charge carriers with defects that can trap or delay the collection of carriers is low. Thus, one purpose of implementing a high speed photographic response is to utilize a thin silicon material for the semiconductor element layer of the image sensor. Such devices can substantially deplete charge carriers with an arbitrarily applied bias to provide a fast collection of photographs that have generated carriers due to pixel potential buildup and field drift. Charge carriers remaining in the non-depleted region of the pixel are collected by diffusion transport that is slower than drift transport. For this reason, it may be desirable to have the thickness of any region where the diffusion can dominate to be much thinner than the depletion drift region. In other embodiments, the silicon material can have a thickness and substrate doping concentration such that the internal bias generates a sufficient electric field for the charge carrier saturation rate.

  Thus, an image sensor device according to aspects of the present disclosure provides high quantum efficiency in the infrared portion of the light spectrum, among other things, for a given silicon thickness. Thus, high quantum efficiency, low bulk dark current generation, and reduced response time or delay can be obtained for wavelengths in the near infrared. In other words, the sensitivity is higher and the response time is faster than seen in thicker devices, achieving the same quantum efficiency in the near infrared.

  In addition to silicon, other semiconductor materials are envisioned for use in the image sensor device of the present disclosure. Non-limiting examples of such semiconductor materials include Group IV materials, compounds and alloys consisting of materials from Group II and VI, compounds and alloys consisting of materials from Group III and V, and combinations thereof Can do. More specifically, typical Group IV materials can include silicon, carbon (eg, diamond), germanium, and combinations thereof. Various exemplary combinations of Group IV materials can include silicon carbide (SiC) and silicon germanium (SiGe). Typical silicon materials can include, for example, amorphous silicon (a-Si), microcrystalline silicon, polycrystalline silicon, and single crystal silicon and other crystalline forms. In other aspects, the semiconductor material can include at least one of silicon, carbon, germanium, aluminum nitride, gallium nitride, indium gallium arsenide, aluminum gallium arsenide, and combinations thereof.

  Typical combinations of II-VI materials are cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc oxide (ZnO), zinc selenide (ZnSe), zinc sulfide (ZnS). , Zinc telluride (ZnTe), cadmium zinc telluride (CdZnTe, CZT), mercury cadmium telluride (HgCdTe), mercury telluride (HgZnTe), mercury selenide (HgZnSe), and combinations thereof it can.

Typical combinations of III-V materials are aluminum antimonide (AlSb), aluminum arsenide (AlAs), aluminum nitride (AlN), aluminum phosphide (AlP), boron nitride (BN), boron phosphide (BP ), Boron arsenide (BAs), gallium antimonide (GaSb), gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), indium antimony (InSb), indium arsenide (InAs), indium nitride (InN) Indium phosphide (InP), aluminum gallium arsenide (AlGaAs, Al _x Ga _1-x As), indium gallium arsenide (InGaAs, In _x Ga _1-x As), indium gallium phosphide (InGaP), aluminum indium arsenide (AlInAs) ) Indium aluminum antimonide (AlInSb), gallium arsenide (GaAsN), gallium arsenide phosphorus (GaAsP), aluminum gallium nitride (AlGaN), aluminum gallium phosphide (AlGaP), indium gallium nitride (InGaN), indium arsenide antimony (InAsSb), Indium gallium antimonide (InGaSb), aluminum gallium indium phosphide (AlGaInP), aluminum gallium arsenide phosphorus (AlGaAsP), indium gallium arsenide phosphorus (InGaAsP), aluminum indium arsenide phosphorus (AlInAsP), aluminum gallium arsenide nitride (AlGaAsN), indium nitride Gallium arsenide (InGaAsN), indium aluminum arsenide nitride (InAlAsN), It may include gallium arsenide antimony nitride (GaAsSbN), gallium indium arsenide antimony (GaInNAsSb), gallium indium arsenide phosphide antimony (GaInAsSbP), and combinations thereof.

  Further, various types of semiconductor materials are envisioned and any such material that can be incorporated into an electromagnetic radiation detection device is considered within the scope. In one embodiment, for example, the semiconductor material is a single crystal. In other embodiments, the semiconductor material is polycrystalline. In yet another aspect, the semiconductor material is microcrystalline. It is also envisioned that the semiconductor material can be amorphous. Specific non-limiting examples include amorphous silicon and amorphous selenium.

  The semiconductor materials of the present disclosure can be made using a variety of manufacturing processes. In some cases, the manufacturing procedure can affect the efficiency of the device and can be taken into account to achieve the desired result. Typical manufacturing processes can include a Czochralski (Cz) process, a magnetic Czochralski (mCz) process float zone (FZ) process, an epitaxial growth, or a deposition process. It is envisioned that the semiconductor material used in the present invention can be a combination of a single crystal material and an epitaxial growth layer formed thereon.

  Various dopant materials are envisioned to form multiple doped regions, texture regions, or any other doped portion of the image sensor device, and any such dopants that can be used in such processes are It is considered to be within range. It should be noted that the particular dopant utilized can vary depending on the material being doped and the intended use of the resulting material. It should be noted that any dopant known in the art can be used to dope the structure of the present disclosure.

Thus, the first doped region and the second doped region are doped with electron donating or hole donating species to cause the regions to be more positive or negative in polarity relative to each other and / or the semiconductor device layer. Can. In one embodiment, for example, any doped region can be p-doped. In other embodiments, any doped region can be n-doped. In one aspect, for example by doping with p + and n-dopants, the first doped region can be negative in polarity and the second doped region can be positive in polarity. In some embodiments, n (-), n (-), n (+), n (++), p (-), p (-), p (+), or p (++) of the region Variations on the type of dope can be used. Further, in some aspects, the semiconductor material can be doped in addition to the first and second doped regions. The semiconductor material can be doped to have a doping polarity different from one or more of the first and second doped regions, or the semiconductor material can be in the first and second doped regions. It can be doped to have a doping polarity that is the same as one or more of them. In one particular embodiment, the semiconductor material can be doped to be p-type and one or more of the first and second doped regions are doped to be n-type. Can be done. In other particular embodiments, the semiconductor material can be doped to be n-type, and one or more of the first and second doped regions can be doped to be p-type. Can be done. In one embodiment, at least one of the first or second doped region has a surface area of about 0.1 [mu] m ² ~ about 32 [mu] m ^2.

  As described above, the texture region can function to diffuse electromagnetic radiation, redirect electromagnetic radiation, and absorb electromagnetic radiation, thus increasing the QE of the device. The texture region can include surface features to increase the effective optical path length of the silicon material. The surface features can be cones, pyramids, pillars, protrusions, microlenses, quantum dots, inversion features, and the like. Factors such as feature size, dimensions, material type, dopant profile, texture position, etc. can allow the diffusion region to be tunable for a particular wavelength. In one aspect, tuning the device can allow a particular wavelength or wavelength range to be absorbed. In other aspects, tuning the device may allow specific wavelengths or wavelength ranges to be reduced or eliminated via filtering.

  As described above, textured areas according to aspects of the present disclosure can cause the silicon material to experience multiple passes of electromagnetic radiation incident into the device, particularly at longer wavelengths (ie, infrared). Such internal reflection increases the effective optical path length to be greater than the thickness of the semiconductor element layer. This increase in optical path length increases the quantum efficiency of the device without increasing the substrate thickness, resulting in an improved signal to noise ratio. The texture region can be associated with the surface closest to the incident electromagnetic radiation, or the texture region can be associated with the surface opposite to the incident electromagnetic radiation, so that the silicon is irradiated before the radiation strikes the texture region. Allows to pass through the material. Furthermore, the texture region can be doped. In one aspect, the textured region can be doped with the same or similar doping polarity as the semiconductor device layer to provide a doped contact region on the backside of the device. In other embodiments, the textured region can be heavily doped with the same polarity as the semiconductor substrate to passivate the surface by a surface electric field. In other embodiments, the texture region can be doped with a reverse polarity to the semiconductor substrate to form a diode junction (or depletion region) at the interface between the texture layer and the adjacent substrate.

  Texture regions can be formed by various techniques including laser, chemical etching (eg, anisotropic etching, isotropic etching), nanoimprinting, lithographic texturing, further material deposition, reactive ion etching, and the like. One effective method of producing texture regions is by laser machining. Such laser processing allows individual locations of the semiconductor device layer to be textured to the desired depth with a minimum amount of material removal. Various techniques of laser processing to form textured regions are envisioned, and any technique that can form such regions should be considered within this scope. Laser treatment or processing, among other things, can allow enhanced absorption properties and increased detection of electromagnetic radiation.

  In one aspect, for example, a target region of silicon material can be illuminated by laser radiation to form a textured region. Examples of such treatment are described in further detail in US Pat. No. 7,057,256, US Pat. No. 7,354,792, and US Pat. No. 7,442,629. Which is hereby incorporated by reference in its entirety. In brief, the surface of a semiconductor material such as silicon is irradiated by laser radiation to form a texture or surface modified region. Such laser processing can occur with or without dopant material. In those embodiments where a dopant is used, the laser can be directed onto the silicon surface via a dopant carrier. In this method, dopant from the dopant carrier is introduced into the target region of the silicon material. Such regions incorporated into the silicon material can have various advantages according to aspects of the present disclosure. For example, the target region typically has a textured surface that increases the area of the laser machined region and increases the probability of radiation absorption by the mechanisms described herein. In one embodiment, such a target region is a substantially textured surface that includes micron-sized and / or nano-sized surface features generated by laser texturing. In other embodiments, irradiating the surface of the silicon material includes exposing laser radiation to the dopant such that the irradiation incorporates the dopant into the semiconductor. Various dopant materials are known in the art and are described in more detail herein. It is also understood that in some aspects, such laser processing can occur in an environment that is substantially not doped with silicon material (eg, an argon atmosphere).

  Thus, the surface of the silicon material that forms the textured regions is chemically and / or structurally altered by laser processing, and in some embodiments, nanostructures, microstructures, and / or regions patterned on the surface Formation of surface features appearing as well as incorporation of such dopants into the semiconductor material, if dopants are used. In some embodiments, such features can be on the order of 50 nm to 20 μm in size and can help absorb electromagnetic radiation. In other embodiments, such features can be on the order of 200 nm to 2 um in size. In other words, the textured surface can increase the probability of incident radiation absorbed by the silicon material.

  In other embodiments, at least a portion of the texture region and / or semiconductor material can be doped with a dopant to generate a passivating surface electric field, and the semiconductor opposite the electromagnetic radiation upon which the texture region is incident. In the embodiment arranged on the element layer side, the passivating surface electric field is a so-called back surface electric field. The back surface electric field can function to repel charge carriers generated from the back surface of the device towards the junction to improve collection efficiency and speed. The presence of the back surface field also acts to suppress the dark current contribution from the textured surface layer of the device. Note that in some aspects, the surface of the trench, such as deep trench isolation, can be passivated to repel carriers. Furthermore, the back surface field can be formed in such a trench in some embodiments.

  In another aspect, as shown in FIG. 11, the semiconductor device layer 1102 includes a first doped region 1104, a second doped region 1106, and a textured region 1108 on the opposite side of the doped region. Can have. The antireflective layer 1110 can be bonded to the semiconductor element layer 1102 on the opposite side of the texture layer 1108. In some aspects, the antireflective layer 1110 can be on the same side as the semiconductor element layer 1102, such as a textured region (not shown). Still further, in some embodiments, the lens can be optically coupled to the semiconductor element layer and positioned to focus electromagnetic radiation incident on the semiconductor element layer.

  In another aspect of the present disclosure, the pixel array is provided as an image sensor device. Such an array can include a semiconductor element layer having an incident light surface, at least two pixels in the semiconductor element layer, each pixel having a first doped region and a second doped region forming a junction; A texture region coupled to the semiconductor element layer and arranged to interact with the electromagnetic radiation. The texture region can be a single texture region or multiple texture regions. In addition, the pixel array can have a thickness of less than 100 um and an external quantum efficiency of at least 75% for electromagnetic radiation having at least one wavelength greater than about 800 nm. A pixel array can have a number of pixels or is generally known as a pixel resolution of about 320 × 240 (QVGA) or higher. In another aspect, the pixel resolution is 640 × 480 (VGA) greater than 1 MP (megapixel), greater than 5 MP, greater than 15 MP, and even greater than 25 MP.

  As shown in FIG. 12, for example, the semiconductor device layer 1202 can include at least two pixels 1204 each having a first doped region 1206 and a second doped region 1208. The texture region 1210 can be arranged to interact with electromagnetic radiation. FIG. 13 shows a separate texture area for each pixel. In some embodiments, however, a single textured region can be used to increase the absorption path length of multiple pixels in the array. Furthermore, isolation structures 1212 can be disposed between the pixels to electrically and / or optically isolate the pixels from each other. In other aspects, the pixel array can be electronically coupled to each pixel or electronic circuitry that processes the signals generated by the pixels.

  Various image sensor configurations and elements are envisioned and all such should be considered within the scope. Non-limiting examples of such elements include carrier wafers, transistors, electrical contacts, antireflection layers, dielectric layers, circuit layers, vias, transfer gates, infrared filters, color filter arrays (CFA), infrared Cut filters, separation features, etc. can be included. Various image sensor resolutions are also envisioned and all such should be considered within this scope. Non-limiting samples of such resolution are so-called QVGA, SVGA, VGA, HD720, HD1080, 4K, etc. In addition, such devices can have light absorbing properties and elements, as disclosed in US patent application Ser. No. 12 / 885,158, filed on Sep. 17, 2010, which reference is hereby made. The whole is incorporated. It is further understood that the image sensor can be a CMOS (complementary metal oxide semiconductor) image sensor or a CCD (charge coupled device).

  Image sensor devices can include multiple transistors per pixel depending on the desired design of the device. In one aspect, for example, the image sensor device can include at least three transistors. In other embodiments, the imaging device can have 4, 5, or 6 or more transistors. For example, FIG. 13 shows an exemplary schematic of a 6-transistor (6-T) architecture that enables global shutter operation according to one aspect of the present disclosure. The image sensor includes a pixel (PD), a global reset (Global_RST), a global transfer gate (Global_TX), a storage node, a transfer gate (TX1), a reset (RST), a source follower (SF), and a floating state. A diffusion (FD), a row selection transistor (RS), a power source (Vapix), and an output voltage (Vout) can be included. Correlated double sampling (CDS) is possible due to extra transfer gates and storage nodes. Therefore, the readout noise should be able to be matched with a general CMOS 4T pixel.

  Although roll shutters are considered to be within this range, the use of a global shutter can be beneficial for use in the present apparatus and system. For example, FIGS. 14a-b show iris images of a subject imaged by an IR sensitive image sensor device. As can be seen from FIG. 14a, the iris image captured using the roll shutter is slightly distorted due to movement during imaging. These distortions can affect individual identification. On the other hand, FIG. 14b shows an iris image taken using a global shutter and does not show such distortion. A global shutter operates by electronically activating all pixels precisely at the same time, and can simultaneously integrate light from the background and stop the integration at the same time. This eliminates roll shutter distortion.

  In another aspect of the present disclosure, the biometric authentication system can include a three-dimensional (3D) light-sensitive image sensor. Such 3D type image sensors are useful for imaging details of an individual's surface for identification, such as facial features, body features, stride or body location features, ear features, etc. Such 3D systems may include any applicable 3D technology including, but not limited to, Time-of-Flight (TOF), structured light, stereoscopic light, etc. it can. For example, TOF is one developed for use in radar and LIDAR (Light Detection and Ranging) systems to provide depth information available for such 3D imaging. Technology. The basic principle of TOF involves sending a signal to an object and measuring the characteristics of the signal returned from the target. The measured property is used to determine the time that the photon has passed since leaving the light source, ie, the TOF. The distance to the target is derived by multiplying half of the TOF by the signal speed.

  FIG. 15 illustrates TOF measurement with a target having a plurality of spatially separated surfaces. Equation (III) can be used to measure the distance to the target, where d is the distance to the target and c is the speed of light.

  By measuring the time required for light emitted from the light source 1502 moving relative to the target 1504 (eg, TOF), the distance between the light source (eg, light emitting diode (LED)) and the surface of the target is determined. Can be derived. For such an image sensor, if each pixel can perform the TOF measurement, a 3D image of the target can be obtained. Distance measurement is difficult with the TOF method when the target is relatively close to the light source due to the high speed of light. Thus, in one aspect, TOF measurements can utilize modulated LED light pulses to measure the phase delay between emitted and received light. Based on the phase delay and LED pulse width, TOF can be derived. Therefore, the concept of TOF can be used in both CMOS and CCD sensors to obtain depth information from each pixel to capture an image used for personal identification.

  As one example, 3D pixels, such as TOF 3D pixels with enhanced infrared response, can improve depth accuracy and can sequentially show facial features on a three-dimensional scale. In one aspect, the TOF image sensor has a filter that blocks visible light so that only IR light can be detected. In another example, a 3D pixel, such as a TOF 3D pixel with enhanced infrared response, can reduce the amount of light needed to perform an accurate distance calculation. In one aspect, the imaging array can include at least one 3D infrared detection pixel and at least one visible light detection pixel disposed integrally with respect to each other. Figures 16a-c show non-limiting configuration examples of pixel arrays of such arrays. FIG. 16 a shows an example of a pixel array configuration having red pixels 1602, blue pixels 1604, and green pixels 1606. In addition, two 3D TOF pixels 1608 with enhanced responsiveness or detectability in the IR region of the light spectrum are included. The combination of two 3D pixels allows better depth perception. In FIG. 16b, the pixel array shown includes the image sensor described in FIG. 16a and three arrays of red pixels, blue pixels, and two green pixels. Basically, one TOF pixel replaces the first quadrant of the RGGB pixel design. In this configuration, the addition of several green pixels simultaneously captures more of the green wavelength needed for green sensitivity needs for the human eye while capturing infrared light for depth perception. Capturing is possible. It should be noted that this range should not be limited by the number or arrangement of pixel arrays, and that any number and / or arrangement is included in this range. FIG. 16c shows another arrangement of pixels according to yet another aspect.

  In some aspects, the TOF pixel may have an on-pixel optical narrow bandpass filter. Narrow bandpass filter design can match the emission spectrum of the modulated light source (either LED or laser), can significantly reduce unwanted ambient light, and modulate IR light signal The noise-to-noise ratio can be further improved. Another advantage of increased infrared QE is the possibility of high frame rate operation for high speed 3D imaging. The integrated IR cut filter can enable high quality visible images with high fidelity color rendering. Integrating an infrared cut filter on the sensor chip also reduces the overall system cost of the camera module (due to typical IR filter glass removal) and reduces the module profile (good for mobile applications) can do. This can utilize TOF pixels and non-TOF pixels.

  FIG. 17 shows an exemplary schematic of a three-dimensional TOF pixel according to one aspect of the present disclosure. A 3D TOF pixel can have 11 transistors to achieve target depth measurement. In this embodiment, the 3D pixel includes a pixel (PD), a global reset (Global_RST), a first global transfer gate (Global_TX1), a first storage node, and a first transfer gate (TX1). A first reset (RST1), a first source follower (SF1), a first floating diffusion (FD1), a first row selection transistor (RS1), a second global transfer gate (Global_TX2), A second storage node, a second transfer gate (TX2), a second reset (RST2), a second source follower (SF2), a second floating diffusion (FD2), a second Includes a row selection transistor (RS2), a power supply (Vapix), and an output voltage (Vout) Door can be. Other transistors can be included in the 3D architecture and should be considered within the scope of the present invention. Certain embodiments with eleven transistors can reduce motion artifacts due to global shutter operation, thereby providing more accurate measurements.

  As another example of a pixel array structure that may be particularly beneficial when both IR and visible light are detected, an IR filter can be integrated with the visible light filter to produce a unique pixel array. For example, a conventional Bayer array includes two green, one red, and one blue selective pixels. Larger array patterns can be used to maintain an approximate ratio of selection while simultaneously allowing scattered IR pixel selection filtering to achieve enhanced image sensor functionality. This is particularly useful for image sensors according to aspects of the present disclosure that include pixels that can detect light in the visible to IR range. For example, in one aspect, an image sensor according to aspects of the present disclosure can detect light having a wavelength of about 400 nm to about 1200 nm. Thus, in addition to detectability in the IR range, such silicon image sensors are also selective for light in the visible region from about 400 nm to about 700 nm. Thus, by functionally combining various filtering devices for such an array of pixels, selective detection in the green, blue, red, and IR regions can be achieved. It should be noted that the filter can also be configured to be movable in and out of the path of incident electromagnetic radiation.

  In one aspect, for example, the plurality of filters can be arranged in a Bayer pattern and configured to pass predetermined electromagnetic radiation having a wavelength in the range of about 400 nm to about 700 nm as well as a wavelength longer than 850 nm. Can. In other embodiments, the visible electromagnetic radiation can include a wavelength of about 400 nm to about 700 nm, and the infrared electromagnetic radiation has at least one wavelength that is greater than about 900 nm, in some cases about 940 nm. Can be included.

  The specific pattern of the pixel array can vary depending on the desired characteristics of the device. In one aspect, for example, the Bayer pattern can be modified using a filter to replace one or more visible light selection pixels by IR selection pixels. Any of the green, red, or blue pixels can be modified to detect IR light on the pixel array. As one example, maintaining the green selectivity of the array includes a plurality of first 2 × 2 filters including two green pass pixel filters, one infrared pass pixel filter, and one blue pass pixel filter; This can be achieved by using a plurality of first 2 × 2 filters including two green pass pixel filters, one infrared pass pixel filter, and one red pass pixel filter. These 2 × 2 filters can then be varied to provide a uniform blue / red selection pattern across the array. One exemplary implementation is shown in FIG. Furthermore, it should be noted that any of the green pixels can be replaced by the IR selection pixel function as well.

  It is further envisioned that electromagnetic radiation can be filtered using multiple or single filters to allow passage through the visible and IR ranges. For example, the light can be filtered to allow the passage of visible and IR light having at least one wavelength above 900 nm. By providing a notch filter between these ranges, the signal-to-noise ratio can be improved. Furthermore, the narrow band pass filter centered on the emission wavelength of the active light source can further improve the efficiency of the image sensor. One example of such a filter is a dichroic cut filter that allows visible light to pass with IR light above 930 nm, but filters light having a wavelength between about 700 nm and about 930 nm.

  Furthermore, the narrowband IR filter can facilitate further processing of the resulting image. For example, by using a narrowband IR filter in combination with a short integration time, the visible image can be subtracted from the IR filtered image to produce an improved IR image. The resulting image can also be processed using correlated double sampling with a visible frame followed by an IR frame by averaging the visible frames for use in offset subtraction. .

  As mentioned above, systems for identifying individuals are either passive light sources (eg, sunlight, ambient room lights) or active light sources (eg, LEDs or bulbs) that are capable of emitting IR light. A light source can be included. The system can utilize any light source that can be beneficially used to identify an individual. Thus, in one aspect, the light source is an active light source. Active light sources are well known in the art and are particularly capable of emitting light in the IR spectrum. Such an active light source can be continuous or pulsed, and the pulses can be synchronized with light capture at the imaging device. Various light wavelengths are emitted and utilized to identify individuals, but IR light in the range of about 700 nm to about 1200 nm can be particularly useful. Further, in some embodiments, the active light source can be two or more active light sources that each emit infrared electromagnetic radiation at different peak emission wavelengths. Any different wavelength emission within the IR range can be used, non-limiting examples include 850 nm, 940 nm, 1064 nm, and the like. In some embodiments, two or more active light sources can interact with the same image sensor device simultaneously or with an offset duty cycle. Such a configuration may be useful for independent capture of one or more unique features of an individual for redundant identification. This redundant identification can ensure accurate authentication or identification of the individual. In other embodiments, two or more active light sources can each interact with different image sensor devices. In other aspects, the device can determine whether ambient light is sufficient to make an identification, thereby saving battery life by not using an active light source. An image sensor with enhanced infrared quantum efficiency increases the likelihood that ambient light is sufficient for passive measurements.

  As described above, the system includes an analysis module operably coupled to the image sensor device to compare at least one biometric feature with a known and authenticated biometric feature to facilitate personal identification. be able to. For example, the analysis module can obtain known data about an individual's identity from a source such as a database and compare this known data to an electronic representation captured by the image sensor device. Various algorithms are known that can analyze an image to define a biometric boundary / measurement value and convert the biometric value to a unique code. The unique code can then be stored in a database that is used for comparison to provide positive identification of individuals. Such an algorithm is described for iris detection in US Pat. No. 4,641,349 and US Pat. No. 5,291,560, which is incorporated by reference in its entirety. It should be noted that the image processing module and the analysis module can be the same or different modules. It is understood that the system described herein can be used with any of the identification algorithms.

  Furthermore, it should be noted that in various aspects, the system can be sized to fit various applications. This is further facilitated by the improved sensitivity of the image sensor device to IR light and a corresponding decrease in the intensity of IR radiation, thus allowing a reduction in the size or number of light sources. In one aspect, for example, the light source, the image sensor device, and the image processing module collectively have a size of less than about 250 cubic millimeters. In one aspect, for example, the light source, the image sensor device, and the image processing module collectively have a size of less than about 160 cubic millimeters. In one aspect, for example, the image sensor device, the lens system, and the image processing module collectively have a size of less than about 130 cubic millimeters. In one aspect, for example, the image sensor is incorporated into a camera module that includes, but is not limited to, a lens and a focus element, said module having a thickness of less than 6 mm in the direction of incident electromagnetic radiation. is there. In yet another aspect, the light source, the image sensor device, and the image processing module collectively have a size of less than about 16 cubic centimeters. In one aspect, the image sensor device can have an optical format of about 1 inch. In one aspect, the image sensor device can have an optical format of about ½ inch. In one aspect, the image sensor device can have an optical format of about 1/3 inch. In one aspect, the image sensor device can have an optical format of about 1/4 inch. In one aspect, the image sensor device can have an optical format of about 1/7 inch. In yet another aspect, the image sensor device can have an optical format of about 1/10 inch.

  In other aspects, the identification system can be integrated into an electronic device. Non-limiting examples of such devices can include mobile smart phones, mobile phones, laptop computers, desktop computers, tablet computers, ATMs, televisions, video game consoles, and the like. In one particular aspect, the positive identification of the individual is operable to unlock the electronic device. In this example, the electronic device stores the encrypted authorized user's face and iris identification characteristics in a storage registry, and the personal identification characteristics are captured by an authentication system embedded in the electronic device. The authentication system can compare the identification characteristics of authorized users stored for positive identification with the identification characteristics of individuals. This aspect is useful for verifying individuals in financial and legal transactions or other transactions that require identification and / or signatures. In this specification, it is envisaged that an ATM financial transaction can include a user authentication system, wherein the encrypted authorized user identification characteristics are stored on the card for positive identification by the ATM device. It is stored in the ATM debit card so that the characteristics of authorized users and personal identification characteristics can be compared. Similar systems are available for credit cards or other items of commerce.

  In another example, a financial transaction can be accomplished via a mobile phone device, where the financial transaction authorization system is authorized during the financial transaction period via the front or cameo imager built into the mobile phone. The user is continuously verified. Furthermore, in the mobile phone embodiment, the image sensor device can include a switch so that the user can switch between infrared light capture and visible light capture modes.

  In FIG. 19, an electronic device can include an integrated user authentication system 1900 that can be configured to continuously verify and authorize a user. Such a system, as described above, includes a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions that form a junction, and a textured region that is arranged to interact with electromagnetic radiation. An image sensor device 1902 can be included, where the image sensor device is arranged to capture an electronic representation of the identification characteristics of the user of the device. It should be noted that the thickness of the semiconductor element layer can vary depending on the design of the device. Therefore, the thickness of the semiconductor element layer should not be understood as limiting, and further includes other thicknesses. Non-limiting examples include less than about 20 microns, less than about 30 microns, less than about 40 microns, less than about 50 microns, and the like. The image sensor device captures an electronic representation of the user at least periodically. The system can also include a storage register 1906 operable to store known identification characteristics of the authorized user, and an analysis module 1908 electrically coupled to the image sensor device and the storage register, the analysis module comprising: An algorithm may be used on the generated electronic representation to operate to compare the known identification characteristic to the electronic representation of the identification characteristic to verify that the user is an authorized user. Thus, authorized users can continue to use the device, and unauthorized users are excluded from doing so. In one aspect, the system can include a light source operable to emit electromagnetic radiation having at least one wavelength from about 700 nm to about 1200 nm toward the user.

  In other aspects, a second image sensor device 1904 can be incorporated into the system. The second image sensor device may be an IR enhanced imaging device configured to detect electromagnetic radiation having a wavelength in the range of about 800 nm to about 1200 nm. The second image sensor device may be configured to track exclusively the individual's iris, face, or both. In another aspect, the second image sensor device can be configured to detect visible light and can be a cameo-type image sensor. In other embodiments, trigger 1910 (eg, motion sensor) and switch 1912 can be activated and toggled between the first and second image sensor devices as needed. Can be incorporated into the user authentication system. Furthermore, the first or second image sensor device can include a lens or optical element to help capture an electronic representation of the individual.

  Given the continuous nature of the user authentication system, it may be beneficial to separate the authentication system from the main processing system of the electronic device in order to reduce the load on the central processing unit (CPU). One technique for doing so includes monolithically integrating the analysis module and the image sensor device integrally on the same semiconductor element and separate from the CPU of the electronic device. Thus, the authentication system functions independently from the CPU of the electronic device.

  Furthermore, in some aspects, the authentication system can include a toggle to switch the image sensor device between IR light capture and visible light capture. Thus, the image sensor can switch between allowing the user and capturing a visible light image. In some aspects, the authentication system can capture both IR and visible light simultaneously and use image processing to authenticate the user.

  Furthermore, for security reasons it may be beneficial to encrypt known identification characteristics. Such encryption can protect authorized users from theft of personal information and unauthorized use of electronic devices.

  Various biometric features can be utilized to identify an individual, and any feature that can be utilized for such identification is considered to be within this scope. Non-limiting examples of such discriminating characteristics include iris structures and patterns, facial outline patterns, facial internal distances, eye patterns, earlobe shapes, and the like. The face outline pattern may include a distance between pupils, a two-dimensional face pattern, a three-dimensional face pattern, and the like. In one particular aspect, the substantially unique identification characteristic can include an electronic representation of the iris sufficient to identify the individual. As noted above, the enhanced sensitivity of the system can facilitate the capture of an electronic representation of the iris using a minimal amount of near infrared light.

  In one aspect, an image sensor includes a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions that form a junction, and a textured region that is arranged to interact with reflected electromagnetic radiation. A front-illuminated image sensor comprising at least about 30% external quantum efficiency for electromagnetic radiation having at least one wavelength greater than 900 nm and at one wavelength greater than 900 nm ( With a modulation transfer function (MTF) greater than 0.3 (as measured by the sloped edge method in half-Nyquist).

  In one aspect, an image sensor includes a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions that form a junction, and a textured region that is arranged to interact with reflected electromagnetic radiation. A front-illuminated image sensor comprising at least about 30% external quantum efficiency for electromagnetic radiation having at least one wavelength greater than 900 nm and at one wavelength greater than 900 nm ( With a modulation transfer function (MTF) greater than 0.4 (as measured by the sloped edge method in half-Nyquist).

  In another aspect, the image sensor includes a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a texture region disposed to interact with reflected electromagnetic radiation. A front-illuminated image sensor comprising at least about 30% external quantum efficiency for electromagnetic radiation having at least one wavelength greater than 900 nm and at one wavelength greater than 900 nm ( With a modulation transfer function (MTF) greater than 0.5 (as measured by the sloped edge method in half-Nyquist).

  In a further aspect, the image sensor includes a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region disposed to interact with the reflected electromagnetic radiation. A back-illuminated image sensor comprising at least about 40% external quantum efficiency for electromagnetic radiation having at least one wavelength greater than 900 nm and one wavelength greater than 900 nm (half With a modulation transfer function (MTF) greater than 0.4 (as measured by the sloped edge method in Nyquist).

  In one particular embodiment, the system includes a device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a texture arranged to interact with reflected electromagnetic radiation. A silicon image sensor having a region, wherein the image sensor has an external quantum efficiency of at least about 30% for electromagnetic radiation having at least one wavelength greater than 900 nm and at one wavelength greater than 900 nm (tilt in half Nyquist With a modulation transfer function (MTF) greater than 0.4 (as measured by the edge method). In one aspect, the silicon image sensor in the system is a 1/4 inch optical format with a resolution of 1 MP or higher. In another aspect, the silicon image sensor in the system is a 1/3 inch optical format with a resolution of 3MP or higher. In one aspect, the image sensor is incorporated into a camera module having a capacity of less than 150 cubic millimeters. In other aspects, the system is incorporated into a mobile phone. In one aspect, the measured biometric signature is an iris structure. In yet another aspect, the active light source is one or more 940 nm light emitting diodes. In another aspect, the image sensor is incorporated into a camera module having a field of view of less than 40 degrees. In yet another aspect, the image sensor module is built in a filter that allows transmission only with near infrared light.

  Of course, it is to be understood that the above-described configurations are merely illustrative of the application of the principles of the present disclosure. Numerous modifications and alternative constructions can be devised by those skilled in the art without departing from the spirit and scope of the disclosure, and the appended claims are intended to cover such modifications and constructions. ing. Accordingly, this disclosure is described in detail and in connection with what is presently considered to be the most practical embodiment of the disclosure, and is not limited thereto, It will be apparent to those skilled in the art that numerous changes can be made without departing from the principles and concepts described herein, including changes in shape, form, function, and method of operation, assembly, and use. Let's go.

Claims (39)

A system for authenticating a user by identifying at least one biometric feature,
An active light source capable of emitting electromagnetic radiation having a peak emission wavelength of about 700 nm to about 1200 nm, wherein the active light source is arranged to irradiate the at least one biological feature of the user with the electromagnetic radiation. The active light source,
An image sensor having an infrared capture pixel disposed relative to the active light source, thereby receiving and detecting electromagnetic radiation reflected from the at least one biological feature of the user, wherein the light capture pixel Has a structural arrangement that facilitates the passage of a plurality of infrared electromagnetic radiation, and the image sensor;
A processing module operatively coupled to the image sensor and operable to generate an electronic representation of the at least one biometric feature of the user from detected electromagnetic radiation;
An authentication module operatively coupled to the processing module and operable to provide authentication of the user by receiving the electronic representation and comparing to the authentication criteria of the at least one biometric feature of the user;
An authentication indicator functionally coupled to the authentication module and operable to notify that the user has been authenticated.   The system of claim 1, wherein the image sensor is capable of detecting electromagnetic radiation having a wavelength of about 400 nm to about 1200 nm. The system of claim 1, wherein the active light source generates electromagnetic radiation having an intensity of less than about 5 uW / cm ^{2 at} 940 nm.   The system according to claim 1, wherein at least the active light source, the image sensor, the processing module, and the authentication indicator are integrated into an electronic device.   5. The system of claim 4, wherein the electronic device is a handheld electronic device, a mobile phone, a smartphone, a tablet computer, a personal computer, an automated teller machine, a kiosk, a credit card terminal, a television, a video game console, or a combination thereof. System.   5. The system according to claim 4, wherein the image sensor is incorporated in a cameo camera of the electronic device.   The system of claim 1, wherein the active light source has a peak emission wavelength of about 850 nm to about 1100 nm.   The system of claim 1, wherein the active light source has a peak emission wavelength of about 940 nm.   2. The system of claim 1, wherein the active light source operates in a continuous mode, a strobe mode, a user activated mode, a structured light mode, an authentication activated mode, or a combination thereof. system.   The system of claim 1, wherein the image sensor interacts with reflected electromagnetic radiation, a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction. A front-illuminated image sensor comprising a texture region disposed, wherein the image sensor has an external quantum efficiency of at least about 20% for electromagnetic radiation having at least one wavelength greater than 900 nm .   The system of claim 1, wherein the image sensor interacts with reflected electromagnetic radiation, a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction. A front-illuminated image sensor comprising a textured region, wherein the image sensor has an external quantum efficiency of at least about 30% for electromagnetic radiation having at least one wavelength greater than 900 nm. .   The system of claim 1, wherein the image sensor interacts with reflected electromagnetic radiation, a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction. A back-illuminated image sensor including a textured region, wherein the image sensor has an external quantum efficiency of at least about 40% for electromagnetic radiation having at least one wavelength greater than 900 nm. .   The system of claim 1, wherein the image sensor is a complementary metal oxide semiconductor (CMOS) image sensor. The system of claim 1, further comprising:
A synchronization element operably coupled between the image sensor and the active light source, the synchronization element synchronizes the emission of electromagnetic radiation by the active light source and the capture of electromagnetic radiation reflected by the image sensor. System that can be made to.   15. The system of claim 14, wherein the synchronization element includes circuitry, software, or a combination thereof configured to synchronize the image sensor and the active light source.   The system of claim 1, wherein the active light source is two or more active light sources that each emit electromagnetic radiation at different peak emission wavelengths.   17. The system of claim 16, wherein the two or more active light sources emit electromagnetic radiation from about 850 nm to about 940 nm. The system of claim 1, wherein the image sensor has a background irradiance of less than about 5 uW / cm ² having at least one wavelength between about 700 nm and about 1200 nm and acting on the user at a distance of about 18 inches. A system capable of capturing reflected electromagnetic radiation having sufficient detail to facilitate authentication of the user using electromagnetic radiation emitted from the active light source. The system of claim 1, wherein the image sensor has a peak emission wavelength of about 940 nm and a background irradiance of less than about 5 uW / cm ² that acts on the user at a distance of about 18 inches. A system capable of capturing reflected electromagnetic radiation having sufficient detail to facilitate authentication of the user using electromagnetic radiation emitted from a light source.   The system according to claim 1, wherein the biological feature is a face outline pattern, an eyeball pattern, an iris pattern, an earlobe pattern, or a combination thereof.   2. The system according to claim 1, wherein at least one of the authentication module or the processing module is monolithically integrated with the image sensor, but separate from a main central processing unit (CPU) of the electronic device. System. The system of claim 1, further comprising:
A system having a plurality of filters operatively coupled to the image sensor.   23. The system of claim 22, wherein the plurality of filters are arranged in a Bayer pattern and are configured to filter predetermined electromagnetic radiation having a wavelength in the range of about 400 nm to about 700 nm. A system. The system of claim 1, further comprising:
A system having a filter configured to allow predetermined visible and infrared electromagnetic radiation to pass through.   25. The system of claim 24, wherein the visible electromagnetic radiation comprises a wavelength between about 400 nm and about 700 nm and the infrared electromagnetic radiation comprises at least one wavelength greater than about 900 nm. A system for authenticating a user against a secure resource,
A system for authenticating the user according to claim 4;
An authorization module operatively coupled to the authentication module and operable to verify the user's authentication to allow the user to access at least a portion of the secure resource.   27. The system of claim 26, wherein the secure resource is physically separated and different from the electronic device.   28. The system of claim 27, wherein at least one of the authentication module or the authorization module is located within the electronic device.   28. The system of claim 27, wherein at least one of the authentication module or the authorization module is located within the secure resource.   27. The system of claim 26, wherein the secure resource is located within the electronic device.   32. The system of claim 30, wherein the secure resource is a gateway for a remote secure resource.   27. The system of claim 26, wherein the user permission is operable to verify the user in a financial transaction with the secure resource.   27. The system of claim 26, wherein at least one of the authentication module or the authorization module is monolithically integrated with the image sensor, but separate from a central processing unit of the electronic device. A method for authorizing a user by an electronic device to use a secure resource, comprising:
Irradiating the user with electromagnetic radiation from an active light source in the electronic device to reflect the electromagnetic radiation from at least one biological feature of the user, the electromagnetic radiation having a wavelength of about 700 nm to about 1200 nm. The irradiating step having a peak emission wavelength; and
Detecting the reflected electromagnetic radiation with an image sensor disposed within the electronic device, the image sensor including an infrared capture pixel disposed with respect to the active light source, whereby the user's Receiving and detecting the electromagnetic radiation reflected from the at least one biological feature, and the light-capturing pixel has a structural arrangement that facilitates the passage of a plurality of infrared electromagnetic radiations. And a process of
Generating an electronic representation of the at least one biometric feature of the user from the reflected electromagnetic radiation;
Authenticating the user as an authenticated user by comparing the electronic representation with an authentication criterion of the at least one biometric feature of the user;
Allowing the authenticated user to use at least a portion of the secure resource. 35. The method of claim 34, further comprising:
Informing the user that authorization is successful and the authorization state is active.   35. The method of claim 34, wherein the biological feature is a biological outline pattern, an eyeball pattern, an iris pattern, an earlobe pattern, or a combination thereof. 35. The method of claim 34, further comprising:
A method comprising periodically authenticating the user during use of the secure resource.   35. The method of claim 34, wherein the user authentication system is operable to continuously verify the user as the authorized user. 35. The method of claim 34, wherein the step of irradiating the electromagnetic radiation and the step of detecting the reflected electromagnetic radiation further comprises:
Pulsing electromagnetic radiation having a peak emission wavelength of about 940 nm;
Detecting the reflected electromagnetic radiation consistent with a pulse of electromagnetic radiation at 940 nm;
Detecting visible electromagnetic radiation by the image sensor;
Subtracting the detected visible electromagnetic radiation from the reflected electromagnetic radiation to generate the electronic representation.

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