JP2016197726A - Dicing tape-integrated film for semiconductor back surface and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing tape-integrated film for a semiconductor back surface, usable from a dicing process of a semiconductor wafer to a flip-chip bonding process of a semiconductor chip.SOLUTION: A dicing tape-integrated film for a semiconductor back surface includes: a dicing tape comprising an adhesive layer on a base material; and a flip chip type film for a semiconductor back surface provided on the adhesive layer. In the dicing tape-integrated film for a semiconductor back surface, the peeling force (temperature: 23°C, peeling angle: 180°, tensile rate: 300 mm/min) between the adhesive layer of a dicing tape and the flip chip type film for a semiconductor back surface is 0.05-1.5 N/20 mm, the light transmittance of the flip chip type film for a semiconductor back surface is 20% or less, and the flip chip type film for a semiconductor back surface is colored.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dicing tape-integrated film for semiconductor back surface. The flip chip type semiconductor back film is used for protecting the back surface of a chip-like work (semiconductor chip or the like) and improving the strength. The present invention also relates to a semiconductor device using a dicing tape-integrated film for semiconductor back surface and a method for manufacturing the device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. Therefore, as a semiconductor device and its package, a semiconductor chip (chip-shaped workpiece) is fixed to the substrate and the circuit surface of the semiconductor chip is opposed to the electrode formation surface of the substrate (manufactured by flip chip bonding; Flip chip mounting semiconductor devices) are widely used. In such a semiconductor device or the like, the back surface of the semiconductor chip (chip-shaped workpiece) may be protected by a protective film to prevent damage to the semiconductor chip or the like.

JP 2008-166451 A JP 2008-006386 A Japanese Patent Laid-Open No. 2007-261035 JP 2007-250970 A JP 2007-158026 A Japanese Patent Laid-Open No. 2004-221169 JP 2004-214288 A JP 2004-142430 A JP 2004-072108 A JP 2004-063551 A

  However, affixing the back surface protective film that protects the back surface of the semiconductor chip to the back surface of the semiconductor chip obtained by dicing the semiconductor wafer in the dicing process increases the number of processes and costs. Etc. will increase. Further, due to the recent thinning, the semiconductor chip may be damaged in the semiconductor chip pick-up process after the dicing process, and it is required to reinforce the semiconductor wafer or the semiconductor chip before the pick-up process.

  The present invention has been made in view of the above problems, and an object thereof is to provide a dicing tape-integrated film for semiconductor back surface that can be used from a dicing process of a semiconductor wafer to a flip chip bonding process of a semiconductor chip. is there. Another object of the present invention is to exhibit excellent holding power in the dicing process of the semiconductor wafer, and in the pick-up process after the dicing process, a semiconductor chip by dicing is used for a flip chip type semiconductor back surface. Dicing tape integrated semiconductor backside that can be peeled off from the adhesive layer of the dicing tape with a film and excellent pick-up properties, and can also exhibit excellent appearance after the flip chip bonding process of the semiconductor chip It is to provide a film for use.

  The inventors of the present application, as a result of intensive studies to solve the above-mentioned conventional problems, laminated a flip chip type semiconductor back film on the adhesive layer of a dicing tape having a base material and an adhesive layer, A dicing tape and a flip chip type semiconductor back film are integrally formed, and the peeling force (or adhesive force) between the flip chip type semiconductor back film and the adhesive layer of the dicing tape is a specific value. Then, the laminated body (film for dicing tape-integrated semiconductor back surface) in which the dicing tape and the flip chip type semiconductor back surface film are integrally formed is subjected to the semiconductor wafer dicing process to the semiconductor chip flip chip bonding process. It can be used and exhibits excellent holding power in the dicing process of semiconductor wafers. In the pickup step after the dicing step, the semiconductor chip by dicing can be peeled off from the adhesive layer of the dicing tape with a flip chip type semiconductor back film, with excellent pickup properties, The present inventors have found that an excellent appearance can be exhibited after the flip chip bonding process of the semiconductor chip, and have completed the present invention.

  That is, the present invention relates to a dicing tape having a base material, a dicing tape having an adhesive layer formed on the base material, and a flip chip type semiconductor back film formed on the adhesive layer of the dicing tape. A tape-integrated film for semiconductor back surface, wherein the peeling force between the adhesive layer of the dicing tape and the flip-chip type semiconductor back film (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) Is a film for a semiconductor back surface integrated with a dicing tape, wherein the film is 0.05 N / 20 mm to 1.5 N / 20 mm.

  Thus, the dicing tape-integrated film for semiconductor back surface of the present invention is formed in a form in which the flip chip type film for semiconductor back surface and the dicing tape having the base material and the adhesive layer are integrated, and Peeling force (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) between the adhesive layer of the dicing tape and the flip-chip type semiconductor back film is 0.05 N / 20 mm to 1.5 N Since it is / 20 mm, when the wafer (semiconductor wafer) is diced, the dicing tape-integrated film for semiconductor back surface can be attached to the work (semiconductor wafer) so that the work can be held and effectively diced. After the workpiece is diced to form a chip workpiece (semiconductor chip), the chip workpiece With flip-chip type semiconductor film for the backside can be easily peeled with excellent pickup property from the dicing tape of the adhesive layer, it is possible to back surface obtained easily protected chip-shaped workpiece. In addition, the chip-like workpiece has a flip chip type semiconductor back film adhered to the back surface with excellent adhesion, and has an excellent appearance. Of course, since the chip-shaped workpiece has the flip chip type semiconductor back film formed on the back surface, the marking performance on the back surface is also good.

  Moreover, since the dicing tape-integrated film for semiconductor back surface of the present invention is formed integrally with the dicing tape and the film for flip chip type semiconductor back surface as described above, the dicing tape is attached to the semiconductor wafer before the dicing process. When attaching to the back side, the film for flip chip type semiconductor back side can also be attached, and the process of attaching only the film for flip chip type semiconductor back side (flip chip type semiconductor back side film attaching process) is required. And not. In addition, in the subsequent dicing process and pick-up process, since the flip chip type semiconductor back film is adhered to the back surface of the semiconductor wafer or the back surface of the semiconductor chip formed by dicing, the semiconductor wafer and the semiconductor chip are effectively used. In the dicing process and subsequent processes (such as a pickup process), damage to the semiconductor chip can be suppressed or prevented.

  In the present invention, the flip chip type semiconductor back film is preferably colored. If the film for flip chip type semiconductor back surface is colored, not only can the laser marking property be improved, but also the dicing tape and the film for flip chip type semiconductor back surface can be easily distinguished, and workability is improved. Etc. can be improved.

  Moreover, it is suitable for the film for flip chip type semiconductor back surfaces to have laser marking properties. The dicing tape-integrated film for semiconductor back surface of the present invention can be suitably used for a flip-chip mounted semiconductor device.

The present invention is a method of manufacturing a semiconductor device using a dicing tape integrated semiconductor back film,
Attaching the workpiece onto the wafer adhesive layer in the flip chip type semiconductor back film of the dicing tape integrated semiconductor back film;
A step of dicing the workpiece to form a chip-shaped workpiece;
The step of peeling the chip-shaped work from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
And a step of fixing the chip-shaped workpiece to an adherend by flip chip bonding.

The present invention also relates to a flip-chip mounted semiconductor device manufactured using the dicing tape-integrated semiconductor back film, and flipping a dicing tape-integrated semiconductor back film on the back surface of the chip-shaped workpiece. Provided is a flip-chip mounted semiconductor device having a structure in which a film for chip-type semiconductor back surface is attached.
Furthermore, the present invention provides the following.
(1) A dicing tape-integrated film for semiconductor back surface comprising a dicing tape having a pressure-sensitive adhesive layer on a substrate and a flip-chip type semiconductor back surface film provided on the pressure-sensitive adhesive layer,
The peeling force (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) between the adhesive layer of the dicing tape and the film for flip chip type semiconductor back before thermosetting is 0.05 N / 20 mm. ~ 1.5N / 20mm,
2. A dicing tape-integrated film for semiconductor back surface, wherein the light transmittance of the flip chip type semiconductor back film is 20% or less.
(2) The dicing tape-integrated film for semiconductor back surface according to (1), wherein the flip chip type film for semiconductor back surface is colored.
(3) The dicing tape-integrated film for semiconductor back surface according to (1) or (2), wherein the flip chip type semiconductor back film has laser marking properties.
(4) The dicing tape-integrated film for semiconductor back surface according to any one of the above (1) to (3), which is used for a flip-chip mounted semiconductor device.
(5) A method of manufacturing a semiconductor device using a dicing tape-integrated film for semiconductor back surface,
The step of adhering the workpiece onto the wafer adhesive layer in the flip chip type semiconductor back surface film of the dicing tape-integrated film for semiconductor back surface according to any one of (1) to (4) above, and dicing the workpiece A step of forming a chip-shaped workpiece,
The step of peeling the chip-shaped work from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
And a step of fixing the chip-like workpiece to an adherend by flip chip bonding.
(6) A flip-chip mounted semiconductor device, which is produced using the dicing tape-integrated semiconductor back film described in any one of (1) to (4) above, and on the back surface of the chip-shaped workpiece, A flip-chip-mounted semiconductor device having a structure in which a flip-chip type semiconductor back surface film of a dicing tape integrated semiconductor back surface film is attached.

  According to the dicing tape-integrated film for semiconductor back surface of the present invention, the dicing tape and the film for flip chip type semiconductor back surface are integrally formed, the adhesive layer of the dicing tape, and the flip chip type semiconductor back surface Since the peeling force from the film for use is a specific value, it can be used from the semiconductor wafer dicing process to the semiconductor chip flip chip bonding process. Specifically, the dicing tape-integrated film for semiconductor back surface of the present invention can exhibit excellent holding power in the dicing process of the semiconductor wafer, and the semiconductor by dicing is used in the pickup process after the dicing process. The chip can be peeled off from the adhesive layer of the dicing tape together with the film for flip chip type semiconductor backside with excellent pick-up property. can do. Further, in the flip chip bonding process or the like, since the back surface of the semiconductor chip is protected by the flip chip type semiconductor back film, it is possible to effectively suppress or prevent cracking, chipping, warping and the like of the semiconductor chip. Of course, the dicing tape-integrated film for semiconductor back surface of the present invention can effectively exhibit its function in a process other than the dicing process to the flip chip bonding process of the semiconductor chip.

It is a cross-sectional schematic diagram which shows an example of the film for dicing tape integrated semiconductor back surfaces of this invention. It is a cross-sectional schematic diagram which shows an example of the manufacturing method of the semiconductor device using the film for dicing tape integrated semiconductor back surfaces of this invention.

  Embodiments of the present invention will be described with reference to FIG. 1, but the present invention is not limited to these examples. FIG. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated film for semiconductor back surface of the present invention. In FIG. 1, 1 is a film for semiconductor back surface integrated with a dicing tape, 2 is a film for flip chip type semiconductor back surface (hereinafter sometimes referred to as “film for semiconductor back surface”), 3 is a dicing tape, 31 is a base material, 32 is an adhesive layer.

  Note that in this specification, parts unnecessary for description are omitted in the drawings, and there are parts illustrated in an enlarged or reduced manner for ease of description.

  As shown in FIG. 1, the dicing tape-integrated film for semiconductor back surface 1 is formed on a pressure-sensitive adhesive layer 32 of a dicing tape 3 having a base material 31 and a pressure-sensitive adhesive layer 32 formed on the base material 31. The film for semiconductor back surface 2 is formed. The film for semiconductor back surface 2 has a peeling force (adhesive force or adhesive force) between the pressure-sensitive adhesive layer 32 of the dicing tape 3 and the film for semiconductor back surface 2 at a temperature of 23 ° C., a peeling angle of 180 °, and a tensile speed: Under the measurement condition of 300 mm / min, it has a characteristic of 0.05 N / 20 mm to 1.5 N / 20 mm. The surface of the film 2 for semiconductor back surface (surface on the side adhered to the back surface of the wafer) may be protected by a separator or the like until it is adhered to the back surface of the wafer.

  The dicing tape-integrated film for semiconductor back surface may have a structure in which the film for semiconductor back surface is entirely formed on the adhesive layer of the dicing tape, and the film for semiconductor back surface is partially formed. It may be a configuration. For example, as shown in FIG. 1, the semiconductor back surface film may be formed only on the portion where the semiconductor wafer is stuck on the adhesive layer of the dicing tape.

(Flip chip type film for semiconductor backside)
The film for semiconductor back surface has a film-like form. As described above, the film for semiconductor back surface has a peeling force (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) with respect to the adhesive layer of the dicing tape of 0.05 N / 20 mm to 1.5 N. Since it has a characteristic of / 20 mm, in the cutting process (dicing process) for cutting the work (semiconductor wafer) stuck on the film for semiconductor back surface into chips, it is supported in close contact with the work. In addition to being able to demonstrate adhesion that does not scatter the cut pieces, the picked-up process after the dicing process can easily peel the diced chip-shaped workpiece together with the film for the semiconductor back surface from the dicing tape. Can be made. Further, after the pick-up process (after the diced chip-shaped workpiece is peeled off from the dicing tape together with the semiconductor back surface film), the back surface of the chip-shaped workpiece (semiconductor chip) has excellent adhesion to the semiconductor back surface film. Since it sticks, the back surface of a chip-shaped workpiece | work can be protected and it can have a function which exhibits the outstanding external appearance property. Of course, the marking property on the back surface of the chip-like workpiece is also good.

  Thus, since the film for semiconductor back surface has excellent marking properties, the film for semiconductor back surface is provided on the surface on the non-circuit surface side of the chip-shaped workpiece or the semiconductor device using the chip-shaped workpiece. By using various marking methods such as a printing method and a laser marking method, marking can be performed and various information such as character information and graphic information can be given. When the film for semiconductor back surface is colored, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility by controlling the color of the coloring.

  In particular, since the film for semiconductor back surface has excellent adhesion to a semiconductor wafer or a semiconductor chip, there is no floating or the like. In addition, since an excellent appearance can be exhibited, a semiconductor device with an added appearance and an excellent appearance can be obtained. In addition, for example, it is also possible to color-code according to products as a semiconductor device.

  In addition, as a film for semiconductor back surfaces, it is important that it has the adhesiveness which does not scatter a cut piece in the case of the cutting process of a workpiece | work.

  As described above, the film for semiconductor back surface is not used for die-bonding a semiconductor chip onto an adherend such as a substrate but is flip-chip mounted (or flip-chip mounted) on the back surface of the semiconductor chip (non-circuit). Used for the protection of the surface), etc., and has an optimal function and configuration. Note that the die bond film used for the purpose of firmly bonding a semiconductor chip onto an adherend such as a substrate is an adhesive layer and is sealed with a sealing material, and therefore does not have a laser mark layer. Does not have laser marking properties. Therefore, the film for semiconductor back surface in the present invention has a function or configuration different from that of the die bond film, and is not suitable for use as a die bond film.

  In the present invention, as described above, the film for semiconductor back surface has a peeling force (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) with respect to the adhesive layer of the dicing tape of 0.05 N / 20 mm to It is important that it is 1.5 N / 20 mm. The upper limit of the peel force (temperature: 23 ° C., peel angle: 180 °, tensile speed: 300 mm / min) of the film for semiconductor back surface to the adhesive layer of the dicing tape may be 1.5 N / 20 mm or less, Preferably it is 1.2 N / 20mm or less, More preferably, it is 1 N / 20mm or less. On the other hand, the lower limit of the peeling force (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) of the film for semiconductor back surface to the adhesive layer of the dicing tape may be 0.05 N / 20 mm or more. However, it is preferably 0.08 N / 20 mm or more (more preferably 0.1 N / 20 mm or more). Accordingly, the peel force between the film for semiconductor back surface and the adhesive layer of the dicing tape (temperature: 23 ° C., peel angle: 180 °, tensile speed: 300 mm / min) is 0.08 N / 20 mm to 1.2 N. / 20mm may be sufficient, and 0.1N / 20mm-1N / 20mm may be sufficient.

  In addition, when the film for semiconductor back surface is formed of a resin composition containing a thermosetting resin as described below, since the thermosetting resin is usually in an uncured or partially cured state, the semiconductor back surface The peel force of the film for the dicing tape on the pressure-sensitive adhesive layer is usually the peel force when the thermosetting resin is uncured or partially cured.

  Peeling force between the film for semiconductor back surface and the adhesive layer of the dicing tape (peeling force between the film for semiconductor back surface and the adhesive layer of the dicing tape) (temperature: 23 ° C., peeling angle: 180 °, tensile speed : 300 mm / min) produced a dicing tape-integrated film for semiconductor back surface having a film for semiconductor back surface formed on the adhesive layer of the dicing tape, and a peel tester (trade name “Autograph AGS-J” Shimadzu) The film for semiconductor back surface is peeled off at a temperature of 23 ° C. under a condition of peeling angle: 180 ° and tensile speed: 300 mm / min. It is a value (N / 20 mm width) measured by peeling at the interface with the agent layer.

  The peeling force of the film for semiconductor back surface to the adhesive layer of the dicing tape can be controlled by the type and content of the constituent resin component, the type and content of the crosslinking agent, the type and content of the filler, and the like. .

  In the present invention, the film for semiconductor back surface can be formed of a resin composition, and is preferably composed of a resin composition containing a thermoplastic resin and a thermosetting resin. In addition, the film for semiconductor back surface may be comprised with the thermoplastic resin composition in which the thermosetting resin is not used, and may be comprised with the thermosetting resin composition in which the thermoplastic resin is not used. good.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), polyamideimide resins, or fluorine Examples thereof include resins. A thermoplastic resin can be used individually or in combination of 2 or more types. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is preferable.

  The acrylic resin is not particularly limited, and one or two esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms (preferably 4 to 18 carbon atoms). Examples include polymers having the above as components. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, and 2-ethylhexyl group. Octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.

  Further, the other monomer for forming the acrylic resin (a monomer other than an alkyl ester of acrylic acid or methacrylic acid having an alkyl group with 30 or less carbon atoms) is not particularly limited. For example, acrylic acid , Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid-containing monomer, acid anhydride monomer such as maleic anhydride or itaconic anhydride, (meth) acrylic acid 2 -Hydroxyethyl, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meth) acrylic acid 10 -Hydroxydecyl, ( T) Hydroxyl group-containing monomers such as 12-hydroxylauryl acrylate or (4-hydroxymethylcyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meta ) Sulphonic acid group-containing monomers such as acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) acryloyloxynaphthalene sulfonic acid, or phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate.

  Such a resin may be synthesized and used according to a known method, or a commercially available product may be used.

  Examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. A thermosetting resin can be used individually or in combination of 2 or more types. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is suitable. Moreover, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy. Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin Epoxy resin such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used.

  As the epoxy resin, among the above examples, a novolak type epoxy resin, a biphenyl type epoxy resin, a trishydroxyphenylmethane type epoxy resin, and a tetraphenylolethane type epoxy resin are preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  The epoxy resin may be synthesized and used according to a known method, or a commercially available product may be used.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are preferred. This is because the connection reliability of the semiconductor device can be improved.

  A phenol resin may be synthesize | combined and used according to a well-known method, and a commercial item may be used for it.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  In the present invention, the semiconductor back film is particularly preferably formed of a resin composition containing an epoxy resin, a phenol resin, and an acrylic resin. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. The blending ratio in this case is not particularly limited, but for example, the mixing amount of the epoxy resin and the phenol resin can be appropriately selected from the range of 10 parts by weight to 300 parts by weight with respect to 100 parts by weight of the acrylic resin component.

  It is important that the film for semiconductor back surface has adhesion to the back surface (circuit non-formed surface) of the semiconductor wafer. The film for semiconductor back surface having such adhesion can be formed by, for example, a resin composition containing an epoxy resin. In order to crosslink the film for semiconductor back surface, a polyfunctional compound that reacts with a functional group at the molecular chain terminal of the polymer can be added as a crosslinking agent. Thereby, the adhesion characteristic under high temperature can be improved and heat resistance can be improved.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, and a metal chelate crosslinking agent. Examples of the crosslinking agent include a metal salt crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. As the crosslinking agent, an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable. A crosslinking agent can be used individually or in combination of 2 or more types.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In addition, the usage-amount in particular of a crosslinking agent is not restrict | limited, According to the grade to bridge | crosslink, it can select suitably. Specifically, the amount of the crosslinking agent used is usually 0.05 to 7 parts by weight with respect to 100 parts by weight of the resin component (polymer component) (particularly, the polymer having a functional group at the molecular chain end). Part. When the amount of the crosslinking agent used is 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer component, adhesion and cohesion can be exhibited at a high level.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

(Coloring agent)
In the present invention, the film for semiconductor back surface is preferably colored. Thus, when the film for semiconductor back surface is colored (when it is not colorless or transparent), the color exhibited by coloring is not particularly limited, but for example, it is a dark color such as black, blue, red, etc. It is preferable, and it is more preferable that it is black.

  In the present invention, the dark color basically means that L * defined by the L * a * b * color system is 60 or less (0 to 60) [preferably 50 or less (0 to 50). Preferably, it means a dark color of 40 or less (0 to 40)].

In addition, black means that L * defined by the L * a * b * color system is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25. This means a black color which is (0-25) below. In black, a * b * defined by the L * a * b * color system can be appropriately selected according to the value of L *. As a * and b *, for example, both are preferably −10 to 10, more preferably −5 to 5, and a range of −3 to 3 (among others 0 or almost 0). Is more preferable.

  In the present invention, L *, a *, and b * defined by the L * a * b * color system use a color difference meter (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is obtained by measuring. The L * a * b * color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L * a * b *) color system. It means that. The L * a * b * color system is defined in JIS Z 8729 in the Japanese Industrial Standard.

  When coloring the film for semiconductor back surface, a color material (colorant) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be preferably used, and a black color material is more preferable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as a coloring material, the dye is dissolved or uniformly dispersed in the semiconductor back film, so that the film for semiconductor back (and hence dicing tape) having a uniform or almost uniform coloring density is obtained. Integrated film for semiconductor back surface) can be easily manufactured. Therefore, when a dye is used as the coloring material, the film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface can make the coloring density uniform or almost uniform, and can improve the marking property and appearance.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, as the black color material, for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.

  Examples of black color materials include C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  Examples of such a black color material include a product name “Oil Black BY”, a product name “OilBlack BS”, a product name “OilBlack HBB”, a product name “Oil Black 803”, a product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material.

  Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.
In addition, when using a color material mixture in which a cyan color material, a magenta color material, and a yellow color material are mixed as a black color, these color materials should be used alone or in combination of two or more. Can do. The mixing ratio (or blending ratio) of the cyan color material, magenta color material, and yellow color material in the mixed ink composition is specified by a black color (for example, L ^* a ^* b ^* color system). The L ^* , a ^*, and b ^* can be appropriately selected according to the type of each color material and the like as long as they can exhibit a black color in the above range. The content ratio of each of the cyan color material, magenta color material, and yellow color material in the mixed ink composition is, for example, cyan color material / magenta color material / yellow color with respect to the total amount of the color material. Color material = 10 wt% to 50 wt% / 10 wt% to 50 wt% / 10 wt% to 50 wt% (preferably 20 wt% to 40 wt% / 20 wt% to 40 wt% / 20 wt% to 40 wt% Weight%).

  Content of a coloring material can be suitably selected from the range of 0.1 weight%-10 weight% in the resin composition (except a solvent or a solvent) which forms the film for semiconductor back surfaces, 0.5 weight% -8 wt% is preferable, and 1 wt% to 5 wt% is more preferable.

  In addition, another additive can be suitably mix | blended with the film for semiconductor back surfaces as needed. Examples of other additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.

  The filler may be either an inorganic filler or an organic filler, but an inorganic filler is suitable. By blending a filler such as an inorganic filler, it is possible to impart conductivity to the film for semiconductor back surface, improve thermal conductivity, adjust the elastic modulus, and the like. The film for semiconductor back surface may be conductive or non-conductive. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metal such as tin, zinc, palladium, solder, or alloys, and other carbon. A filler can be used individually or in combination of 2 or more types. Among them, silica is preferable as the filler, and fused silica is more preferable. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1 micrometer-80 micrometers. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.

  The blending amount of the filler (for example, inorganic filler) is preferably 80 parts by weight or less (0 part by weight to 80 parts by weight), and 0 part by weight to 70 parts by weight with respect to 100 parts by weight of the total amount of the organic resin components. More preferred are parts by weight.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. A flame retardant can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. A silane coupling agent can be used individually or in combination of 2 or more types. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.

The film for semiconductor backside is prepared by mixing a thermoplastic resin such as a thermosetting resin such as an epoxy resin or an acrylic resin with a solvent or other additives as necessary, and preparing a resin composition. It can be formed using a conventional method for forming a layer. Specifically, for example, the resin composition is applied onto a pressure-sensitive adhesive layer of a dicing tape, the resin composition is applied onto an appropriate separator (such as release paper), and a resin layer is formed. A film-like layer as a film for a semiconductor back surface can be formed by a method of transferring (transferring) to a pressure-sensitive adhesive layer of a dicing tape.

  In addition, when the film for semiconductor back surface is formed with the resin composition containing thermosetting resins, such as an epoxy resin, the film for semiconductor back surfaces does not have thermosetting resin in the stage before applying to a semiconductor wafer. It is a state of hardening or partial hardening. In this case, after being applied to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding process), the thermosetting resin in the film for semiconductor back surface is completely or almost completely cured. .

  Thus, even if the film for semiconductor back surface contains a thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, the gel fraction of the film for semiconductor back surface is particularly limited. However, it can be appropriately selected from the range of, for example, 50 wt% or less (0 wt% to 50 wt%), preferably 30 wt% or less (0 wt% to 30 wt%), more preferably 10 wt%. % By weight or less (0 to 10% by weight). The measuring method of the gel fraction of the film for semiconductor back surface can be measured by the following measuring method.

<Method for measuring gel fraction>
About 0.1 g from the film for semiconductor back surface is sampled and weighed accurately (weight of sample), and the sample is wrapped in a mesh sheet, and then immersed in about 50 mL of toluene at room temperature for 1 week. Thereafter, the solvent-insoluble matter (the contents of the mesh sheet) is taken out from toluene and dried at 130 ° C. for about 2 hours. The solvent-insoluble matter after drying is weighed (weight after immersion / drying), and the following formula (a) From this, the gel fraction (% by weight) is calculated.
Gel fraction (% by weight) = [(weight after immersion / drying) / (weight of sample)] × 100 (a)

  In addition, the gel fraction of the film for semiconductor back surfaces can be controlled by the heating temperature, the heating time, etc., in addition to the type and content of the resin component, the type and content of the crosslinking agent.

  The film for semiconductor back surface is a film-like product, and when colored, the colored form is not particularly limited. The film for semiconductor back surface may be, for example, a film-like product formed of a thermoplastic resin and / or a thermosetting resin and a resin composition containing a colorant, etc., and is a thermoplastic resin and / or a thermosetting resin. A film-like product having a configuration in which a resin layer formed of a resin composition containing a resin or the like and a colorant layer are laminated may be used. The colorant layer is preferably formed of a resin composition containing the colorant and a thermoplastic resin and / or a thermosetting resin.

  In addition, when the film for semiconductor back surface is a laminate of a resin layer and a colorant layer, the film for semiconductor back surface of the laminated form has a form in which resin layer / colorant layer / resin layer are laminated in this order. It is preferable. In this case, the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.

  In the present invention, when the film for semiconductor back surface is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.

  In addition, since the cutting water is used in the work (semiconductor wafer) dicing process, the film for the semiconductor back surface may absorb moisture, resulting in a moisture content higher than that of the normal state. When flip-chip bonding is performed with such a high water content, water vapor may accumulate at the adhesion interface between the film for semiconductor back surface and the workpiece or its processed body (chip-shaped workpiece), and floating may occur. Therefore, as a film for a semiconductor back surface, by having a layer made of a core material having high moisture permeability, water vapor diffuses, and this problem can be avoided. From this viewpoint, the film for semiconductor back surface may be one in which a layer made of a core material is laminated on one side or both sides. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  Although the thickness of the film for semiconductor back surfaces is not specifically limited, For example, it can select suitably from the range of about 2 micrometers-200 micrometers. In the present invention, the thickness of the film for semiconductor back surface is preferably about 4 μm to 160 μm, more preferably about 6 μm to 100 μm, and still more preferably about 10 μm to 80 μm. In addition, the film for semiconductor back surface may be in any form of a single layer or a laminate. When the film for semiconductor back surface has a laminated form, examples of the laminated form include a laminated form composed of a wafer adhesive layer and a laser mark layer. In addition, between such a wafer adhesive layer and a laser mark layer, other layers (intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.) ) May be provided. The wafer adhesive layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer. On the other hand, the laser mark layer is a layer that exhibits excellent laser marking properties, and is a layer that is used when laser marking is performed on the back surface of a semiconductor chip.

  The film for semiconductor back surface in the present invention has an elastic modulus at 23 ° C. (tensile storage elastic modulus E ′) of preferably 1 GPa or more, more preferably 2 GPa or more, and further preferably 3 GPa or more. If the elastic modulus of the film for semiconductor back surface is 1 GPa or more, the chip-like work is peeled off from the adhesive layer of the dicing tape together with the film for semiconductor back surface, and then the film for semiconductor back surface on the support (for example, carrier tape) It is possible to effectively suppress or prevent the semiconductor back film from sticking to a support (for example, a top tape or a bottom tape in a carrier tape) when it is placed on and transported. it can. When the film for semiconductor back surface is formed of a resin composition containing a thermosetting resin, as described above, the thermosetting resin is usually in an uncured or partially cured state. The elastic modulus at 23 ° C. of the film is the elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.

  The elastic modulus (tensile storage elastic modulus E ′) at 23 ° C. of the film for semiconductor back surface is obtained by preparing a film for semiconductor back surface without laminating it on a dicing tape, and measuring a dynamic viscoelasticity measuring device “Solid Analyzer” manufactured by Rheometric. RS A2 ", in tension mode, sample width: 10 mm, sample length: 22.5 mm, sample thickness: 0.2 mm, frequency: 1 Hz, heating rate: 10 ° C./min, under nitrogen atmosphere Measured at a predetermined temperature (23 ° C.) and set as the value of the obtained tensile storage modulus E ′.

  The elastic modulus of the film for semiconductor back surface can be controlled by the type and content of the resin component (thermoplastic resin, thermosetting resin), the type and content of filler such as silica filler.

  Although the light transmittance (visible light transmittance) in the visible light region (wavelength: 400 nm to 800 nm) of the film 2 for semiconductor back surface is not particularly limited, for example, a range of 20% or less (0% to 20%) is preferable. % Or less (0% to 10%) is more preferable, and 5% or less (0% to 5%) is particularly preferable. By setting the light transmittance in visible light to 20% or less, it is possible to reduce that the visible light passes through the semiconductor back film 2 and reaches the semiconductor chip and adversely affects the semiconductor chip.

  The light transmittance (%) of the film for semiconductor back surface 2 is the type and content of resin components constituting the film for semiconductor back surface 2, the type and content of colorants (pigments, dyes, etc.), and the type of filler. And its content can be controlled.

The visible light transmittance (%) can be calculated as follows, for example. That is, the semiconductor back film 2 having a thickness (average thickness) of 20 μm is produced without being laminated on the dicing tape. Next, visible light was irradiated to this film 2 for semiconductor back surface using “ABSORTION SPECTRO PHOTOMETER” (trade name, Shimadzu Corporation). The wavelength of visible light is 400 nm to 800 nm. The light intensity of visible light transmitted through the film for semiconductor back surface 2 by this irradiation can be measured and calculated by the following formula.
Visible light transmittance (%) = ((light intensity of visible light after transmission through film 2 for semiconductor back surface) / (initial light intensity of visible light)) × 100

In addition, the said calculation method of light transmittance (%) is applicable also to calculation of the light transmittance (%) of the film for semiconductor back surfaces whose thickness is not 20 micrometers. Specifically, the Lambert-Beer law, it is possible to absorbance A ₂₀ at 20μm calculated as follows.

A ₂₀ = α × L ₂₀ × C (1)
(In the formula, L ₂₀ is the optical path length, α is the extinction coefficient, and C is the sample concentration)
Also, the absorbance A _X of a thickness X ([mu] m) can be represented by the following formula (2).
A _X = α × L _X × C (2)
Furthermore, the absorbance A ₂₀ at a thickness of 20 μm can be expressed by the following formula (3).
A ₂₀ = −log ₁₀ T ₂₀ (3)
(Where T ₂₀ represents the light transmittance at a thickness of 20 μm)
From the equation (1) to (3), the absorbance _{A X} is
A _X = A ₂₀ × (L _X / L ₂₀ )
=-[Log ₁₀ (T ₂₀ )] × (L _X / L ₂₀ )
It can be expressed as. Thereby, the light transmittance T _X (%) at the thickness X (μm) can be calculated by the following equation.
T _X = 10 ^−AX
However, A _X = − [log ₁₀ (T ₂₀ )] × (L _X / L ₂₀ )

  In addition, regarding the thickness of the film for semiconductor back surface in the method for calculating the light transmittance (%) of 20 μm, the thickness of the film 2 for semiconductor back surface of the present invention is not particularly limited. It is the thickness adopted for convenience during measurement.

In the present invention, the film for semiconductor back surface preferably has a low moisture absorption rate. Specifically, the film for semiconductor back surface preferably has a moisture absorption rate of 1% by weight or less when left for 168 hours in an atmosphere of temperature: 85 ° C. and humidity: 85% RH, More preferably, it is less than or equal to weight percent. By making the moisture absorption rate of the film for semiconductor back surface (after standing for 168 hours in an atmosphere of 85 ° C. and 85% RH) 1% by weight or less, the laser marking property can be improved. Further, for example, generation of voids in the reflow process can be suppressed or prevented. The moisture absorption rate of the film for semiconductor back surface can be adjusted, for example, by changing the amount of the inorganic filler added. The moisture absorption rate (% by weight) of the film for semiconductor back surface is calculated from the change in weight when left for 168 hours in an atmosphere of temperature: 85 ° C. and humidity: 85% RH (see the following formula). In addition, as a moisture absorption rate of the film for semiconductor back surface, when the wafer adhesive layer and the laser mark layer in the film for semiconductor back surface are formed of a resin composition containing a thermosetting resin, the temperature: 85 ° C. after thermosetting. And calculated from the weight change when left in an atmosphere of 85% RH for 168 hours.
Moisture absorption rate (% by weight) = (((weight after leaving the film for semiconductor back surface) − (weight before leaving the film for semiconductor back surface)) / (weight before leaving the film for semiconductor back surface)) × 100

Further, in the present invention, it is preferable that the film for semiconductor back surface has a smaller volatile content. Specifically, as a film for a semiconductor back surface, the ratio of the weight loss after heating at 250 ° C. for 1 hour (weight reduction rate) is preferably 1% by weight or less, and 0.8% by weight or less. More preferably. By making the weight reduction rate (temperature: after heating at 250 ° C. for 1 hour) of the film for semiconductor back surface 1% by weight or less, the laser marking property can be improved. Further, for example, it is possible to suppress or prevent the occurrence of cracks in the package in the reflow process. The weight reduction rate of the film for semiconductor back surface can be adjusted, for example, by adding an inorganic substance that can reduce the occurrence of cracks during lead-free solder reflow, for example, an inorganic filler such as silica or alumina. The weight reduction rate (% by weight) of the film for semiconductor back surface is calculated from the change in weight when heated at a temperature of 250 ° C. for 1 hour (see the following formula). In addition, as a weight reduction | decrease rate of the film for semiconductor back surfaces, when the wafer contact bonding layer and the laser mark layer in the film for semiconductor back surfaces are formed with the resin composition containing a thermosetting resin, temperature: 250 after thermosetting. It is calculated from the change in weight when heated at 1 ° C. for 1 hour.
Weight reduction rate (% by weight) = (((weight before leaving the film for semiconductor back surface) − (weight after leaving the film for semiconductor back surface)) / (weight before leaving the film for semiconductor back surface)) × 100

  The film for semiconductor back surface is preferably protected by a separator (release liner) (not shown). The separator has a function as a protective material for protecting the film for semiconductor back surface until it is practically used. Moreover, a separator can further be used as a support base material at the time of transferring the film for semiconductor back surfaces to the adhesive layer on the base material of a dicing tape. The separator is peeled off when a workpiece is stuck on the film for semiconductor back surface of the film for semiconductor back surface integrated with dicing tape. As the separator, it is also possible to use polyethylene, polypropylene, plastic films (polyethylene terephthalate, etc.), paper or the like whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent. The separator can be formed by a conventionally known method. Further, the thickness of the separator is not particularly limited.

(Dicing tape)
The dicing tape is composed of a base material and an adhesive layer formed on the base material. Thus, the dicing tape should just have the structure by which the base material and the adhesive layer were laminated | stacked. The substrate (support substrate) can be used as a support matrix such as an adhesive layer. Examples of the base material include paper base materials such as paper; fiber base materials such as cloth, non-woven fabric, felt, and net; metal base materials such as metal foil and metal plate; plastic base materials such as plastic films and sheets. Base materials: Rubber base materials such as rubber sheets; Foams such as foam sheets, and laminates thereof [Laminates of plastic base materials and other base materials, and laminates of plastic films (or sheets)] Etc.] can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins. Further, as a material for the base material, a polymer such as a crosslinked body of the resin can be used. These materials can be used alone or in combination of two or more.

  In addition, when a plastic-type base material is used as a base material, you may control deformability, such as elongation rate, by extending | stretching process etc.

  The thickness of the substrate is not particularly limited and can be appropriately selected depending on strength, flexibility, purpose of use, and the like. For example, it is generally 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm. The thickness is preferably 20 μm to 300 μm, more preferably about 30 μm to 200 μm, but is not limited thereto. In addition, the base material may have any form of the form of a single layer or the laminated form.

  The surface of the substrate is chemically or chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. An oxidation treatment or the like by a physical method may be performed, or a coating treatment or the like by a primer may be performed.

  The base material contains various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.

  The pressure-sensitive adhesive layer is formed of a pressure-sensitive adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  In the present invention, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be suitably used as the pressure-sensitive adhesive, and an acrylic pressure-sensitive adhesive is more preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itotanic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl di (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, an anti-aging agent, as long as the effects of the present invention are not impaired. Antioxidants, surfactants, crosslinking agents, etc.) may be included.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. Specific examples of the isocyanate-based crosslinking agent and the epoxy-based crosslinking agent include the compounds (specific examples) specifically exemplified as the isocyanate-based crosslinking agent and the epoxy-based crosslinking agent in the section of the film for semiconductor back surface. A crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict | limited in particular.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The pressure-sensitive adhesive layer is formed using a conventional method of forming a sheet-like layer by mixing, for example, a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. Can do. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto a base material, and applying the mixture on an appropriate separator (such as a release paper) to adhere The pressure-sensitive adhesive layer can be formed by a method of forming an agent layer and transferring (transferring) it onto the substrate.

  The thickness in particular of an adhesive layer is not restrict | limited, For example, 5 micrometers-300 micrometers are preferable, 5 micrometers-200 micrometers are more preferable, 5 micrometers-100 micrometers are more preferable, 7 micrometers-50 micrometers are more preferable. When the thickness of the pressure-sensitive adhesive layer is within the above range, an appropriate adhesive force can be exhibited. The pressure-sensitive adhesive layer may be either a single layer or multiple layers.

  The thickness of the dicing tape (total thickness of the tape including the base material and the pressure-sensitive adhesive layer) can be selected, for example, from a range of 6 μm to 1300 μm, preferably 15 μm to 700 μm, more preferably 25 μm to It is 400 μm, more preferably 37 μm to 250 μm.

  In the present invention, the dicing tape-integrated film for semiconductor back surface can have antistatic ability. As a result, it is possible to prevent the circuit from being destroyed due to the generation of static electricity at the time of adhesion (bonding) and peeling, and charging of the workpiece (semiconductor wafer, etc.) due to this. For imparting antistatic ability, a method of adding an antistatic agent or a conductive substance to a base material, an adhesive layer or a film for a semiconductor back surface, a method of attaching a conductive layer made of a charge transfer complex or a metal film to the base material Etc., etc. As these methods, a method in which impurity ions that may change the quality of the semiconductor wafer are less likely to be generated is preferable. As a conductive substance (conductive filler) blended for the purpose of imparting conductivity and improving thermal conductivity, spherical, needle-like, and flaky shapes such as silver, aluminum, gold, copper, nickel, and conductive alloys Examples thereof include metal powders, metal oxides such as alumina, amorphous carbon black, and graphite. However, the film for semiconductor back surface is preferably non-conductive from the viewpoint of preventing electrical leakage.

  In the present invention, the dicing tape prepared as described above may be used, or a commercially available product may be used.

  Further, the dicing tape-integrated film for semiconductor back surface may be formed in a form wound in a roll shape, or may be formed in a form in which sheets (films) are laminated. For example, when it has a form wound in a roll shape, the film for semiconductor back surface is wound in a roll shape in a state protected by a separator as necessary, and the state or form wound in a roll shape The dicing tape-integrated semiconductor back film can be produced. In addition, as a film for dicing tape-integrated semiconductor back surface in a state wound or rolled, a base material, an adhesive layer formed on one surface of the base material, and the adhesive layer You may be comprised by the formed film for semiconductor back surfaces, and the peeling process layer (back process layer) formed in the other surface of the said base material.

  The thickness of the dicing tape-integrated film for semiconductor back surface (the total thickness of the film for semiconductor back surface and the thickness of the dicing tape composed of the base material and the adhesive layer) is, for example, in the range of 8 μm to 1500 μm. The thickness can be selected, and is preferably 20 μm to 850 μm, more preferably 31 μm to 500 μm, and still more preferably 47 μm to 330 μm.

  In the dicing tape-integrated film for semiconductor back surface, the ratio between the thickness of the film for semiconductor back surface and the thickness of the adhesive layer of the dicing tape is not particularly limited. For example, the thickness of the film for semiconductor back surface / the thickness of the dicing tape The thickness of the pressure-sensitive adhesive layer can be appropriately selected from the range of 150/5 to 3/100, preferably 100/5 to 3/50, more preferably 60/5 to 3/40. When the ratio of the thickness of the film for the backside of the semiconductor and the thickness of the pressure-sensitive adhesive layer of the dicing tape is within the above range, an appropriate adhesive force can be exhibited, and excellent dicing properties and pickup properties can be exhibited. Can do.

  Further, in the dicing tape-integrated film for semiconductor back surface, the ratio of the thickness of the film for semiconductor back surface and the thickness of the dicing tape (total thickness of the base material and the adhesive layer) is not particularly limited. The thickness of the film for the back surface / the thickness of the dicing tape can be appropriately selected from the range of 150/50 to 3/500, preferably 100/50 to 3/300, more preferably 60/50 to 3 / 150. When the thickness of the film for the semiconductor back surface / the thickness of the dicing tape is in the range of 150/50 to 3/500, the pick-up property is good, and suppressing or preventing the occurrence of side residues during dicing. Can do.

  Thus, in the dicing tape-integrated film for semiconductor back surface, the ratio of the thickness of the film for semiconductor back surface to the thickness of the adhesive layer of the dicing tape, the thickness of the film for semiconductor back surface, and the thickness of the dicing tape (base By controlling the ratio to the total thickness of the material and the pressure-sensitive adhesive layer, it is possible to improve the dicing property during the dicing process, the pickup property during the pick-up process, and the like. It can be used effectively from the wafer dicing process to the semiconductor chip flip chip bonding process.

(Manufacturing method of dicing tape integrated semiconductor back film)
The manufacturing method of the dicing tape-integrated film for semiconductor back surface of the present invention will be described using the dicing tape-integrated film for semiconductor back surface 1 as an example. First, the base material 31 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, the pressure-sensitive adhesive composition is applied on the substrate 31 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 32. Examples of the coating method include roll coating, screen coating, and gravure coating. The pressure-sensitive adhesive layer composition may be applied directly to the base material 31 to form the pressure-sensitive adhesive layer 32 on the base material 31. Also, a release paper or the like that has been subjected to a release treatment on the surface of the pressure-sensitive adhesive composition. The adhesive layer may be formed on the substrate 31 by transferring the adhesive layer to the substrate 31 after being applied to the substrate. Thus, the dicing tape 3 is produced by forming the adhesive layer 32 on the base material 31.

  On the other hand, the forming material for forming the film 2 for the semiconductor back surface is applied on the release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (in the case where thermosetting is necessary, If necessary, heat treatment is performed and drying is performed to form a coating layer. By transferring this coating layer onto the pressure-sensitive adhesive layer 32, the semiconductor back surface film 2 is formed on the pressure-sensitive adhesive layer 32. In addition, after apply | coating the forming material for forming the film 2 for semiconductor back surfaces directly on the said adhesive layer 32, it dries on predetermined conditions (In the case where thermosetting is required, it heat-processes as needed. The film for semiconductor back surface 2 can also be formed on the pressure-sensitive adhesive layer 32 by applying and drying. As described above, the dicing tape-integrated film for semiconductor back surface 1 according to the present invention can be obtained. In addition, when heat-curing when forming the film 2 for semiconductor back surfaces, it is important to perform heat-curing to such an extent that it will be in the state of partial hardening, However Preferably heat-curing is not performed.

  The dicing tape-integrated film for semiconductor back surface of the present invention can be suitably used in the manufacture of a semiconductor device having a flip chip bonding process. In other words, the dicing tape-integrated film for semiconductor back surface of the present invention is used when manufacturing a flip-chip mounted semiconductor device, and the film for semiconductor back surface of the dicing tape-integrated film for semiconductor back surface is attached to the back surface of the semiconductor chip. A flip-chip mounted semiconductor device is manufactured in the state or form of wearing. Therefore, the dicing tape-integrated film for semiconductor back surface of the present invention is for a flip chip mounting semiconductor device (a semiconductor device in a state or form in which the semiconductor chip is fixed to an adherend such as a substrate by a flip chip bonding method). Can be used.

(Semiconductor wafer)
The workpiece (semiconductor wafer) is not particularly limited as long as it is a known or conventional semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the present invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Method for manufacturing semiconductor device)
Although the manufacturing method of the semiconductor device of this invention will not be restrict | limited especially if it is a manufacturing method of the semiconductor device using the said film for dicing tape integrated semiconductor back surfaces, For example, the manufacturing method which comprises the following process etc. are mentioned.
A process of attaching a work on a film for semiconductor back surface of the film for semiconductor back surface integrated with dicing tape (mounting process)
A step of dicing the workpiece to form a chip-shaped workpiece (dicing step)
A process of separating the chip-shaped workpiece from the adhesive layer of the dicing tape together with the film for semiconductor back surface (pickup process)
A process of fixing the chip-shaped workpiece to the adherend by flip chip bonding (flip chip bonding process)

  More specifically, as a method for manufacturing a semiconductor device, for example, the dicing tape-integrated film for semiconductor back surface of the present invention is appropriately peeled off the separator arbitrarily provided on the film for semiconductor back surface, In this way, a semiconductor device can be manufactured. In the following, the case where the dicing tape-integrated film for semiconductor back surface 1 is used will be described as an example with reference to FIG.

  FIG. 2 is a schematic cross-sectional view showing an example of a method for manufacturing a semiconductor device using the dicing tape-integrated film for semiconductor back surface of the present invention. In FIG. 2, 4 is a work (semiconductor wafer), 5 is a chip-like work (semiconductor chip), 51 is a bump formed on the circuit surface side of the semiconductor chip 5, 6 is an adherend, and 61 is an adherend 6. 1, 2, 3, 31, and 32 are the dicing tape-integrated film for semiconductor back surface, the film for semiconductor back surface, and the dicing tape, respectively. , Substrate, pressure-sensitive adhesive layer.

(Mounting process)
First, as shown in FIG. 2 (a), a semiconductor wafer (work) 4 is adhered (particularly pressure-bonded) on the wafer adhesive layer 22 of the semiconductor back surface film 2 in the dicing tape-integrated film 1 for semiconductor back surface. Then, this is closely held and fixed (mounting process). In addition, this process is normally performed, pressing with pressing means, such as a press roll.

(Dicing process)
Next, as shown in FIG. 2B, the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut into a predetermined size and separated into pieces (small pieces), whereby a semiconductor chip (chip-shaped workpiece) 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape-integrated film for semiconductor back surface 1 can be employed. In the present invention, in the dicing process, it is important that the work is fully cut (completely cut). At this time, it is important that the film for semiconductor back surface is also completely cut and the work is diced together with the film for semiconductor back surface. . That is, it is important that this step is a step of forming a chip-shaped workpiece by dicing the workpiece together with the film for semiconductor back surface. When dicing the workpiece together with the film for semiconductor backside, the dicing tape is not cut or at least partly (preferably partly so that the dicing tape is not cut). Dicing can be performed in such a form. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. In addition, since the semiconductor wafer 4 is firmly fixed with excellent adhesion by the dicing tape-integrated film for semiconductor back surface 1 having the film for semiconductor back surface, chip chipping and chip jumping can be suppressed, and the semiconductor wafer 4 is damaged. Can also be suppressed. In addition, when the film 2 for semiconductor back surfaces is formed with the resin composition containing an epoxy resin, even if cut | disconnected by dicing, it can suppress or prevent that the paste of the film for semiconductor back surfaces arises in the cut surface. it can. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding the film for dicing tape integrated semiconductor back surfaces, this expansion can be performed using a conventionally well-known expanding apparatus. The expanding device supports a donut-shaped outer ring capable of pushing down the dicing tape-integrated semiconductor back film through the dicing ring, and a dicing tape-integrated semiconductor back film having a smaller diameter than the outer ring. And an inner ring. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

(Pickup process)
In order to collect the semiconductor chip 5 that is closely fixed to the dicing tape-integrated film for semiconductor back surface 1, the semiconductor chip 5 is picked up as shown in FIG. The film 2 is peeled off from the dicing tape 3. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips 5 from the substrate 31 side of the dicing tape-integrated film for semiconductor back surface 1 with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device or the like can be mentioned. Note that the back surface (also referred to as non-circuit surface, non-electrode forming surface, etc.) of the picked-up semiconductor chip 5 is protected by the semiconductor back film 2.

(Flip chip bonding process)
As shown in FIG. 2D, the picked-up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 5 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 5 faces the adherend 6. Fix according to law. For example, the bump 51 formed on the circuit surface side of the semiconductor chip 5 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material. By melting, it is possible to secure electrical conduction between the semiconductor chip 5 and the adherend 6 and fix the semiconductor chip 5 to the adherend 6. When the semiconductor chip 5 is fixed to the adherend 6, the facing surface or gap between the semiconductor chip 5 and the adherend 6 is washed, and a sealing material (sealing resin or the like) is placed in the gap. It is important to fill.

  As the adherend, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

  In flip chip bonding, the material of the bump or the conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal material. And solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  In this step, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 and the conductive material on the surface of the adherend 6. Is normally about 260 ° C. (for example, 250 ° C. to 300 ° C.). The dicing tape-integrated film for semiconductor back surface of the present invention can have heat resistance that can withstand high temperatures in the flip chip bonding process by forming the film for semiconductor back surface with an epoxy resin or the like.

  In the flip chip bonding, the cleaning liquid used for cleaning the facing surface (electrode forming surface) and the gap between the semiconductor chip 5 and the adherend 6 is not particularly limited, and an organic cleaning liquid may be used. It may be an aqueous cleaning solution. The film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface of the present invention has solvent resistance to the cleaning liquid, and has substantially no solubility in these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and cleaning can be performed by a conventional method.

  In the present invention, the sealing material used for sealing the gap between the semiconductor chip 5 and the adherend 6 in flip chip bonding is not particularly limited as long as it is an insulating resin (insulating resin). Instead, it can be appropriately selected from known sealing materials such as a sealing resin. The sealing resin is preferably an insulating resin having elasticity. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

  In the sealing step using the sealing resin, the sealing resin is usually cured by heating to be sealed. Note that the curing of the sealing resin is usually performed at 175 ° C. for 60 seconds to 90 seconds, but is not limited to this in the present invention, and can be cured at, for example, 165 ° C. to 185 ° C. for several minutes. . When the film for semiconductor back surface is formed of a resin composition containing a thermosetting resin, the thermosetting resin constituting the film for semiconductor back surface is completely or when the sealing resin is cured. It can be cured almost completely.

  The air gap distance between the semiconductor chip 5 and the adherend 6 is generally about 30 μm to 300 μm.

  Since the semiconductor device manufactured using the dicing tape-integrated film for semiconductor back surface of the present invention (semiconductor device of flip chip mounting) has a film for semiconductor back surface attached to the back surface of the chip-like workpiece, laser marking Can be applied with excellent visibility. In particular, laser marking can be performed with an excellent contrast ratio, and various information (character information, Zuken information, etc.) applied by laser marking can be viewed well. In addition, when performing laser marking, a well-known laser marking apparatus can be utilized. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, but a carbon dioxide laser (CO2 laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser, etc.) ) Is preferred. The solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO4 laser are preferable.

  Since the flip chip mounting semiconductor device manufactured using the dicing tape-integrated film for semiconductor back surface of the present invention is a semiconductor device mounted by the flip chip mounting method, the semiconductor device mounted by the die bonding mounting method is used. Also, the shape is reduced in thickness and size, and can be suitably used as various electronic devices / electronic parts or materials / members thereof. Specifically, as an electronic device using the flip-chip mounted semiconductor device of the present invention, a so-called “mobile phone” or “PHS”, a small computer (for example, a so-called “PDA” (personal digital assistant)), a so-called "Notebook personal computer", so-called "netbook (trademark)", so-called "wearable computer", etc.), "mobile phone" and a small electronic device in which a computer is integrated, so-called "digital camera (trademark)", so-called "Digital video camera", small TV, small game device, small digital audio player, so-called "electronic notebook", so-called "electronic dictionary", electronic device terminal for so-called "electronic book", small digital type clock, etc. Mobile electronic devices (portable electronic devices), etc. Of course, electronic devices other than mobile type (installed type) (for example, so-called “disc top PC”, flat-screen TV, recording / playback electronic devices (hard disk recorder, DVD player, etc.), projector, micro machine, etc.) May be. Further, the materials and members of the electronic component or the electronic device / electronic component are not particularly limited, and examples include a member of a so-called “CPU”, a member of various storage devices (so-called “memory”, a hard disk, etc.), and the like. .

  In the following, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to them, but are merely illustrative examples, unless otherwise specified. In each example, all parts are based on weight unless otherwise specified.

Example 1
<Preparation of film for semiconductor back surface>
Acrylic acid ester-based polymer mainly composed of ethyl acrylate-methyl methacrylate (trade name “Paracron W-197CM”, manufactured by Negami Kogyo Co., Ltd.): 100 parts, epoxy resin (trade name “Epicoat 1004”, JER 113 parts, phenol resin (trade name “Mirex XLC-4L”, manufactured by Mitsui Chemicals): 121 parts, spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd., average particle size) 0.5 μm): 246 parts, Dye 1 (trade name “OIL GREEN 502”, manufactured by Orient Chemical Industries, Ltd.): 5 parts, Dye 2 (trade name “OIL BLACK BS”, manufactured by Orient Chemical Industries, Ltd.): 5 A part of the resin composition was dissolved in methyl ethyl ketone to prepare a resin composition solution having a solid content concentration of 23.6% by weight.

  The resin composition solution was applied as a release liner (separator) on a release treatment film made of a polyethylene terephthalate film having a thickness of 50 μm, and then dried at 130 ° C. for 2 minutes. A film A for semiconductor back surface having an average thickness of 20 μm was produced.

<Production of dicing tape integrated semiconductor back film>
The film A for semiconductor back surface is made of a pressure-sensitive adhesive layer of a dicing tape (trade name “V-8-S”, manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of pressure-sensitive adhesive layer: 10 μm). The film was laminated on the top using a hand roller to produce a dicing tape-integrated film for semiconductor back surface.

Example 2
<Preparation of film for semiconductor back surface>
In the same manner as in Example 1, a semiconductor back film A having a thickness (average thickness) of 20 μm was produced.

<Production of dicing tape integrated semiconductor back film>
The film A for semiconductor back surface is made of a pressure-sensitive adhesive layer of a dicing tape (trade name “V-8-T”, manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of pressure-sensitive adhesive layer: 10 μm). The film was laminated on the top using a hand roller to produce a dicing tape-integrated film for semiconductor back surface.

Comparative Example 1
<Preparation of film for semiconductor back surface>
In the same manner as in Example 1, a semiconductor back film A having a thickness (average thickness) of 20 μm was produced.

<Production of dicing tape integrated semiconductor back film>
The film A for semiconductor back surface is made of a pressure-sensitive adhesive layer of a dicing tape (trade name “V-8-M”, manufactured by Nitto Denko Corporation; average thickness of substrate: 65 μm, average thickness of pressure-sensitive adhesive layer: 10 μm). The film was laminated on the top using a hand roller to produce a dicing tape-integrated film for semiconductor back surface.

Comparative Example 2
<Preparation of film for semiconductor back surface>
In the same manner as in Example 1, a semiconductor back film A having a thickness (average thickness) of 20 μm was produced.

<Production of dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirrer, 86.4 parts of 2-ethylhexyl acrylate, 13.6 parts of 2-hydroxyethyl acrylate, 0.2 part of benzoyl peroxide And 65 parts of toluene were added and polymerized at 61 ° C. for 6 hours in a nitrogen stream to obtain an acrylic polymer A.

  To the acrylic polymer A, 14.6 parts of 2-methacryloyloxyethyl isocyanate was added and subjected to an addition reaction for 48 hours at 50 ° C. in an air stream to obtain an acrylic polymer A ′.

  Next, with respect to 100 parts of acrylic polymer A ′, 8 parts of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba Specialty 5 parts) (manufactured by Chemicals) was added to obtain a pressure-sensitive adhesive composition solution A.

  The pressure-sensitive adhesive composition solution A was applied on a silicone-treated surface of a PET release liner (a release liner in the form of a silicone treatment on one side of a polyethylene terephthalate film), and heated and dried at 120 ° C. for 2 minutes. A pressure-sensitive adhesive layer having a thickness of 10 μm was formed. Next, a polyolefin film was bonded onto the formed pressure-sensitive adhesive layer. This polyolefin film has a thickness of 100 μm, and a printing layer that shields radiation is formed in advance in a portion corresponding to the frame pasting region. Then, it is heated at 50 ° C. for 24 hours to carry out a crosslinking treatment. Further, with an ultraviolet irradiation device manufactured by Nitto Seiki Co., Ltd. (trade name “UM-810”), the integrated light quantity is 400 mJ / cm 2 at an illuminance of 20 mW / cm. A dicing tape A was produced by irradiating the film with ultraviolet rays from the polyolefin film side.

<Production of dicing tape integrated semiconductor back film>
The film A for semiconductor back surface was bonded onto the pressure-sensitive adhesive layer of the dicing tape A using a hand roller to produce a film for semiconductor back surface integrated with a dicing tape.

  In addition, in the dicing tape-integrated film for semiconductor back surface according to Examples 1 and 2, the thickness (average thickness) of the film for semiconductor back surface is 20 μm. In addition, the dicing tape (trade names “V-8-S” and “V-8-T”, both manufactured by Nitto Denko Corporation) has a base material thickness (average thickness) of 65 μm, and an adhesive. The layer thickness (average thickness) is 10 μm and the total thickness is 75 μm. Therefore, in the dicing tape-integrated film for semiconductor back surface according to Examples 1 and 2, the ratio of the thickness of the film for semiconductor back surface and the thickness of the adhesive layer of the dicing tape (the thickness of the film for semiconductor back surface / the thickness of the dicing tape) The thickness of the pressure-sensitive adhesive layer; the ratio of the average thickness) is 20/10, and the ratio (semiconductor) between the thickness of the film for semiconductor back surface and the thickness of the dicing tape (total thickness of the base material and the pressure-sensitive adhesive layer) The ratio of the thickness of the film for the back surface / the thickness of the dicing tape; the ratio of the average thickness) is 20/75.

(Measurement of physical properties of film for semiconductor backside)
The visible light transmittance (%), moisture absorption (% by weight), and weight reduction rate (% by weight) of the film A for semiconductor back surface in the film for semiconductor back surface integrated with dicing tape produced in Examples and Comparative Examples are as follows. Measured as follows. The measurement results are shown in Table 1 below.

<Measuring method of visible light transmittance>
Visible light was irradiated to the colored semiconductor back film (average thickness of 20 μm) produced in Examples and Comparative Examples using “ABSORPTION SPECTRO PHOTOMETER” (trade name, Shimadzu Corporation). The wavelength of visible light is 400 nm to 800 nm. The light intensity of visible light transmitted through the film for semiconductor back surface by this irradiation was measured and calculated by the following formula.
Visible light transmittance (%) = ((light intensity of visible light after transmission through film for semiconductor back surface) / (initial light intensity of visible light)) × 100

<Measurement method of moisture absorption rate>
The films A to F for the semiconductor back surface produced in Examples and Comparative Examples were left in a constant temperature and humidity chamber at a temperature of 85 ° C. and a relative humidity of 85% Rh for 168 hours, and the weight before and after being left was measured. The rate (% by weight) was calculated.
Moisture absorption rate (% by weight) = (((weight after leaving the film for semiconductor back surface) − (weight before leaving the film for semiconductor back surface)) / (weight before leaving the film for semiconductor back surface)) × 100

<Measurement method of weight loss rate>
The films A to F for the backside of the semiconductor produced in the examples and comparative examples were left in a dryer at a temperature of 250 ° C. for 1 hour, the weight before and after being left was measured, and the weight reduction rate (% by weight) was calculated from the following formula. did.
Weight reduction rate (% by weight) = (((weight before leaving the film for semiconductor back surface) − (weight after leaving the film for semiconductor back surface)) / (weight before leaving the film for semiconductor back surface)) × 100

(Evaluation)
About the film for dicing tape integrated semiconductor back surface produced in Examples 1-2 and Comparative Examples 1-2, peeling force between the film for semiconductor back surface and the adhesive layer of the dicing tape, dicing property, pickup property, flip chip bonding property The marking property of the wafer back surface and the appearance property of the wafer back surface were evaluated or measured by the following evaluation or measurement method. The evaluation or measurement results are shown in Table 2.

<Measurement method of peel force between semiconductor back surface film and dicing tape>
The peeling force between the film for semiconductor back surface and the adhesive layer of the dicing tape was measured using the film for dicing tape-integrated semiconductor back surface of Examples 1 and 2 and Comparative Examples 1 and 2 as a peeling tester (trade name “Autograph AGS- J ”(manufactured by Shimadzu Corporation) under the condition of a temperature of 23 ° C., the peeling angle: 180 °, and the tensile speed: 300 mm / min. Peel off (from the adhesive layer) (Peel off at the interface between the film for semiconductor backside and the adhesive layer of the dicing tape) and peel off the maximum load (maximum load excluding peak top in the initial measurement) Value), and this maximum load is the peel force between the film for semiconductor back surface and the adhesive layer of the dicing tape (for the semiconductor back surface of the adhesive layer of the dicing tape) Adhesion to Irumu) (adhesion; N / 20 mm width) was determined.

<Evaluation method for dicing / pickup>
Using the dicing tape-integrated film for semiconductor back surface of Examples 1-2 and Comparative Examples 1-2, the dicing property was evaluated by actually dicing the semiconductor wafer in the following manner, and then the peelability was evaluated. The dicing performance and pickup performance of the dicing tape-integrated film for semiconductor back surface were evaluated.

  A semiconductor wafer (diameter 8 inches, thickness 0.6 mm; silicon mirror wafer) was subjected to back surface polishing, and a mirror wafer having a thickness of 0.2 mm was used as a workpiece. After separating the separator from the dicing tape-integrated film for semiconductor back surface, the mirror wafer (workpiece) is roll-bonded onto the film for semiconductor back surface (that is, on the wafer-side resin layer of the film for semiconductor back surface) at 70 ° C. Further, dicing was performed. The dicing was fully cut so as to obtain a 10 mm square chip size. Semiconductor wafer grinding conditions, bonding conditions, and dicing conditions are as follows.

(Semiconductor wafer grinding conditions)
Grinding equipment: Product name “DFG-8560” manufactured by Disco Corporation Semiconductor wafer: 8 inch diameter (back grinding from 0.6 mm to 0.2 mm thickness)
(Bonding conditions)
Pasting device: Trade name “MA-3000III” manufactured by Nitto Seiki Co., Ltd. Pasting speed meter: 10 mm / min
Pasting pressure: 0.15 MPa
Stage temperature at the time of pasting: 70 ° C
(Dicing conditions)
Dicing machine: Trade name “DFD-6361” manufactured by Disco Corporation Dicing ring: “2-8-1” (manufactured by Disco Corporation)
Dicing speed: 30mm / sec
Dicing blade:
Z1; "203O-SE 27HCDD" manufactured by DISCO
Z2: “203O-SE 27HCBB” manufactured by Disco Corporation
Dicing blade rotation speed:
Z1; 40,000 r / min
Z2; 45,000 r / min
Cut method: Step cut Wafer chip size: 10.0mm square

  With this dicing, the mirror wafer (workpiece) is firmly held on the dicing tape-integrated film for semiconductor back surface without peeling off, and it can be confirmed whether dicing can be performed well and dicing can be performed well. The dicing property was evaluated by assigning “◯” to the case where the dicing was not performed and “x” if the dicing could not be performed satisfactorily.

  Next, the dicing tape-integrated film for semiconductor back surface is pushed up with a needle from the dicing tape side, and the chip-like workpiece obtained by dicing is peeled off from the adhesive layer of the dicing tape together with the film for semiconductor back surface, and the back surface is the semiconductor back surface. The chip-shaped workpiece protected by the film for pick-up was picked up. The pick-up rate (%) of the chips (total number: 400) at this time was determined, and the pick-up property was evaluated. Accordingly, the pickup property is better as the pickup rate is closer to 100%.

The pickup conditions are as follows.
(Semiconductor wafer pickup conditions)
Pickup device: Brand name “SPA-300” manufactured by Shinkawa Co., Ltd. Number of pickup needles: 9 Needle push-up speed: 20 mm / s
Needle push-up amount: 500 μm
Pickup time: 1 second Dicing tape Expanding amount: 3mm

<Flip chip bonding evaluation method>
Using the dicing tape-integrated film for semiconductor back surface according to each example or each comparative example, the chip-like workpiece according to each example or each comparative example obtained by the above <Dicing / Pickup Evaluation Method> The bumps formed on the circuit surface of the chip-shaped workpiece are connected to the circuit board in such a manner that the surface (circuit surface) of the chip-shaped workpiece faces the surface of the circuit board provided with wiring corresponding to the circuit surface. While contacting and pressing the bonding conductive material (solder) attached to the pad, the temperature is raised to 260 ° C. to melt the conductive material, and then cooled to room temperature, whereby the chip-shaped workpiece is circuit board. The semiconductor device was fabricated by fixing to the substrate. The flip chip bonding property at this time was evaluated according to the following evaluation criteria.

(Flip chip bonding evaluation criteria)
○: Can be mounted by flip chip bonding method without problems. ×: Cannot be mounted by flip chip bonding method.

<Evaluation method of marking properties on wafer back surface>
Laser marking is performed with a YAG laser on the back surface of the chip-like workpiece in the semiconductor device obtained by the above <flip chip bonding evaluation method> (that is, the outermost layer surface of the film for semiconductor back surface). About the obtained information (barcode information), the marking property (laser marking property) of the semiconductor device obtained using the dicing tape-integrated film for semiconductor back surface according to each example or each comparative example according to the following evaluation criteria Evaluated.

(Evaluation criteria for marking properties)
○: Among 10 randomly selected adults, 8 or more people judged that the information obtained by laser marking could be viewed well. ×: Obtained by laser marking among 10 randomly selected adults. The number of people who judged that the received information can be viewed well is 7 or less

<Method for evaluating appearance of wafer back surface>
Using the dicing tape-integrated film for semiconductor back surface according to each example, with respect to the chip-like work according to each example obtained by the above-mentioned <Dicing / Pickup Evaluation Method>, the back surface of the chip-like work The appearance was visually evaluated according to the following evaluation criteria.

(Evaluation criteria for appearance)
○: No peeling (floating) between the back surface of the wafer (silicon wafer) in the chip-shaped workpiece and the film for semiconductor back surface ×: Separation between the back surface of the wafer (silicon wafer) in the chip-shaped workpiece and the film for semiconductor back surface ( Floating)

  From Table 2, it has confirmed that the film for dicing tape integrated semiconductor back surfaces which concerns on Examples 1-2 was equipped with the function as a dicing tape and the function as a film for semiconductor back surfaces in the outstanding level.

  In the dicing tape-integrated film for semiconductor back surface of the present invention, the dicing tape and the film for semiconductor back surface are integrally formed, and the peeling force (temperature) between the adhesive layer of the dicing tape and the film for semiconductor back surface : 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) is 0.05 N / 20 mm to 1.5 N / 20 mm, and is used from the dicing process of the semiconductor wafer to the flip chip bonding process of the semiconductor chip. be able to. That is, the dicing tape integrated semiconductor back film of the present invention is a dicing tape integrated semiconductor back film having both functions of a dicing tape and a semiconductor back film when a semiconductor device is manufactured by a flip chip bonding method. It can be used suitably.

DESCRIPTION OF SYMBOLS 1 Dicing tape integrated type film for semiconductor back surface 2 Film for semiconductor back surface 3 Dicing tape 31 Base material 32 Adhesive layer 4 Semiconductor wafer (work)
5 Semiconductor chip (chip-shaped workpiece)
51 Bumps formed on the circuit surface side of the semiconductor chip 5 6 Adhering body 61 Conductive material for bonding deposited on the connection pads of the adherend 6

Claims (4)

A dicing tape-integrated film for semiconductor back surface comprising a dicing tape having a pressure-sensitive adhesive layer on a base material, and a flip chip type semiconductor back surface film provided on the pressure-sensitive adhesive layer,
The peeling force (temperature: 23 ° C., peeling angle: 180 °, tensile speed: 300 mm / min) between the adhesive layer of the dicing tape and the film for flip chip type semiconductor back before thermosetting is 0.05 N / 20 mm. ~ 1.5N / 20mm,
The light transmittance of the flip chip type semiconductor back film is 20% or less,
The film for semiconductor back surface integrated with a dicing tape, wherein the film for flip chip type semiconductor back surface is colored.   The dicing tape-integrated film for semiconductor back surface according to claim 1, wherein the flip chip type semiconductor back film has laser marking properties.   The dicing tape-integrated film for semiconductor back surface according to claim 1, wherein the film is used for a flip chip mounting semiconductor device. A method for manufacturing a semiconductor device using a dicing tape-integrated film for semiconductor back surface,
The process of sticking a work on the wafer adhesion layer in the flip chip type semiconductor back film of the dicing tape integrated semiconductor back film according to any one of claims 1 to 3,
A step of dicing the workpiece to form a chip-shaped workpiece;
The step of peeling the chip-shaped work from the adhesive layer of the dicing tape together with the flip chip type semiconductor back film,
And a step of fixing the chip-like workpiece to an adherend by flip chip bonding.

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