JP2016051846A5 - - Google Patents
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- JP2016051846A5 JP2016051846A5 JP2014177016A JP2014177016A JP2016051846A5 JP 2016051846 A5 JP2016051846 A5 JP 2016051846A5 JP 2014177016 A JP2014177016 A JP 2014177016A JP 2014177016 A JP2014177016 A JP 2014177016A JP 2016051846 A5 JP2016051846 A5 JP 2016051846A5
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- JP
- Japan
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- processing method
- plasma
- plasma processing
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- self
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- 210000002381 Plasma Anatomy 0.000 claims 20
- 238000003672 processing method Methods 0.000 claims 16
- 239000000463 material Substances 0.000 claims 7
- 238000000059 patterning Methods 0.000 claims 6
- 238000001020 plasma etching Methods 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims 1
- 239000004793 Polystyrene Substances 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium(0) Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton(0) Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon(0) Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon(0) Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Claims (8)
（ａ）プラズマエッチングにより前記自己組織化材料をパターニングする工程、(A) patterning the self-assembled material by plasma etching;
（ｂ）前記（ａ）工程の後、前記処理室内に残留する酸素を排気する工程、(B) after the step (a), exhausting oxygen remaining in the processing chamber;
（ｃ）前記（ｂ）工程の後、プラズマを用いて前記試料を前記試料台から脱離させる工程、(C) After the step (b), a step of detaching the sample from the sample stage using plasma,
を有する、プラズマ処理方法。A plasma processing method.
（ａ）プラズマエッチングにより前記自己組織化材料をパターニングする工程、(A) patterning the self-assembled material by plasma etching;
（ｂ）前記（ａ）工程の後、不活性ガスを前記処理室内へ供給しながら前記処理室内に残留する酸素を排気する工程、(B) after the step (a), exhausting oxygen remaining in the processing chamber while supplying an inert gas into the processing chamber;
（ｃ）前記（ｂ）工程の後、プラズマを用いて前記試料を前記試料台から脱離させる工程、(C) After the step (b), a step of detaching the sample from the sample stage using plasma,
を有する、プラズマ処理方法。A plasma processing method.
（ａ）プラズマエッチングにより前記自己組織化材料をパターニングする工程、(A) patterning the self-assembled material by plasma etching;
（ｂ）前記（ａ）工程の後、パルス変調された高周波電力により生成されたプラズマを用いて、前記試料を前記試料台から脱離させる工程、(B) After the step (a), using the plasma generated by the pulse-modulated high frequency power, detaching the sample from the sample stage,
を有する、プラズマ処理方法。A plasma processing method.
四重極型質量分析計を用いて計測された前記酸素の残留量に基づいて、前記（ｂ）工程の排気時間を規定する、プラズマ処理方法。A plasma processing method for defining an exhaust time of the step (b) based on a residual amount of oxygen measured using a quadrupole mass spectrometer.
四重極型質量分析計を用いて計測された前記酸素の残留量に基づいて、前記（ｂ）工程の排気時間を規定する、プラズマ処理方法。A plasma processing method for defining an exhaust time of the step (b) based on a residual amount of oxygen measured using a quadrupole mass spectrometer.
前記不活性ガスは、アルゴンガス、窒素ガス、ヘリウムガス、ネオンガス、クリプトンガス、またはキセノンガスである、プラズマ処理方法。 In claim 2 Symbol placement of the plasma processing method,
The plasma processing method, wherein the inert gas is argon gas, nitrogen gas, helium gas, neon gas, krypton gas, or xenon gas.
前記（ｃ）工程の前記プラズマは、パルス変調された高周波電力により生成される、プラズマ処理方法。The plasma processing method, wherein the plasma in the step (c) is generated by pulse-modulated high-frequency power.
前記自己組織化材料は、ポリメタクリル酸とポリスチレンとが化学的に結合したジブロックポリマーである、プラズマ処理方法。 In the plasma processing method of any one of Claims 1-7,
The plasma processing method, wherein the self-organizing material is a diblock polymer in which polymethacrylic acid and polystyrene are chemically bonded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014177016A JP6329857B2 (en) | 2014-09-01 | 2014-09-01 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014177016A JP6329857B2 (en) | 2014-09-01 | 2014-09-01 | Plasma processing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016051846A JP2016051846A (en) | 2016-04-11 |
| JP2016051846A5 true JP2016051846A5 (en) | 2017-02-16 |
| JP6329857B2 JP6329857B2 (en) | 2018-05-23 |
Family
ID=55659125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014177016A Active JP6329857B2 (en) | 2014-09-01 | 2014-09-01 | Plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6329857B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210335625A1 (en) * | 2019-02-08 | 2021-10-28 | Hitachi High-Technologies Corporation | Dry etching apparatus and dry etching method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2918892B2 (en) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | Plasma etching method |
| JP3259380B2 (en) * | 1992-12-04 | 2002-02-25 | ソニー株式会社 | Method for manufacturing semiconductor device |
| JPH11162933A (en) * | 1997-12-02 | 1999-06-18 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2008205436A (en) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | Method of manufacturing fine structure |
| JP5894445B2 (en) * | 2012-01-23 | 2016-03-30 | 東京エレクトロン株式会社 | Etching method and etching apparatus |
-
2014
- 2014-09-01 JP JP2014177016A patent/JP6329857B2/en active Active
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