JP2016043471A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which enables improvement of a washing degree of a table to which a substrate is attached during polishing and a backing material.SOLUTION: A buff processing module 300A is an apparatus for performing buff processing to a processing object and includes: a buff table 400 including a support surface 402 for supporting the processing object; and a first chemical nozzle 720 and a second chemical nozzle 720-2 which serve as chemical solution supply means configured to supply a chemical solution for washing a support surface 402 of the buff table 400 to the support surface 402.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a processing apparatus for a substrate such as a semiconductor wafer.

  In the manufacture of semiconductor devices, a chemical mechanical polishing (CMP) apparatus that polishes the surface of a substrate is known. In a CMP apparatus, a polishing pad is affixed to the upper surface of a polishing table to form a polishing surface. In this CMP apparatus, the polishing surface of the substrate held by the top ring is pressed against the polishing surface and the polishing table and the top ring are rotated while supplying slurry as a polishing liquid to the polishing surface. Thus, the polishing surface and the surface to be polished are slidably moved relative to each other, and the surface to be polished is polished.

  In a typical CMP apparatus, a polishing table or a polishing pad is larger than a substrate to be polished, and the substrate is polished while a surface to be polished is held downward by a top ring. The polished substrate is cleaned by bringing it into contact with the substrate while rotating a sponge material such as polyvinyl alcohol (PVA), and further dried.

  The applicant of the present application provides a finishing processing unit in the CMP apparatus separately from the main polishing unit, by which a contact member having a diameter smaller than that of the substrate is pressed against the polished substrate after the polishing of the substrate. An application has been filed for a technique of slightly additional polishing or cleaning (Patent Document 2).

JP-A-9-92633 JP-A-8-71511

In the finishing unit, in order to increase the cleaning effect or increase the polishing rate by bringing the contact member into contact with a high pressure, it is necessary to hold the substrate with a table that contacts the entire back surface of the substrate. Furthermore, when the substrate is supported by a table that supports the substrate over the entire surface, abrasive grains and polishing products (such as organic residues) may accumulate on the table surface and contaminate the substrate to be processed. Therefore, it is required to always maintain the cleanliness of the table supporting the substrate and the structures attached to the table (substrate transport mechanism, etc.).

  An object of the present invention is to improve the cleaning degree of a table to which a substrate is attached in a polishing process and a structure attached to the table.

  According to one embodiment of the present invention, an apparatus for buffing a processing object, the buffing table having a support surface for supporting the processing object, and a support surface of the buffing table for cleaning. There is provided an apparatus having a nozzle for supplying a chemical liquid to a support surface.

According to one embodiment of the present invention, in the apparatus for buffing, the buffing table has a backing material, and the surface of the backing material serves as a support surface that supports the object to be treated.
According to one embodiment of the present invention, in the apparatus for buffing, the nozzle is configured to be able to change the direction in the in-plane direction of the buffing table.

According to one embodiment of the present invention, in the apparatus for buffing, the nozzle is configured to be able to change the direction in an in-plane direction perpendicular to the plane of the buffing table.
According to one embodiment of the present invention, in the apparatus for buffing, the nozzle is configured to be able to change its position in a direction perpendicular to the plane of the buffing table.

  According to one embodiment of the present invention, in the apparatus for buffing, the buffing table is configured to supply a fluid to the supporting surface through the buffing table when cleaning the supporting surface of the buffing table. A fluid passage extending to

According to an embodiment of the present invention, in the apparatus for buffing, the fluid passage is configured to be connected to a source of pure water and / or a chemical solution.
According to an embodiment of the present invention, in the apparatus for buffing, the fluid passage is configured to be connectable to a vacuum source for vacuum-adsorbing the processing object on the support surface when buffing the processing object. Is done.

According to one embodiment of the present invention, an apparatus for buffing includes a cleaning mechanism for cleaning the support surface of the buff table by physical contact.
According to one embodiment of the present invention, an apparatus for buffing has a buff head to which a buff pad for buffing can be attached to a processing object through physical contact, and the buff head and the buff pad are used. The buffing table support surface is configured to be cleaned by physical contact.

According to an embodiment of the present invention, an apparatus for buffing includes a fluid passage for supplying fluid to a support surface through a buff head and a buff pad.
According to an embodiment of the present invention, an apparatus for buffing includes a buff head to which a buff pad for buffing can be attached to an object to be processed through physical contact. A brush or sponge material for cleaning the support surface by physical contact can be attached.

  According to one embodiment of the present invention, in a device for buffing, a buff head to which a buff pad for buffing can be attached to a processing object through physical contact, and a support surface of the buffing table are physically attached. And a cleaning head to which a cleaning member, a brush, or a sponge material for cleaning by simple contact can be attached.

  According to an embodiment of the present invention, an apparatus for buffing includes a roll sponge material configured to clean the support surface of the buff table by physical contact by rotating on the buff table.

  According to an embodiment of the present invention, the apparatus for buffing further includes at least one of an atomizer cleaner, an ultrasonic cleaner, and a cavity jet cleaner for cleaning the support surface of the buff table. .

  According to one embodiment of the present invention, the buffing table has a transport mechanism for carrying in and / or unloading the processing target from the buff table, and the transport mechanism is cleaned along with the cleaning of the support surface. Configured.

  According to one embodiment of the present invention, there is provided a method for cleaning a support surface of a buffing table that supports a processing object in an apparatus for buffing the processing object, for cleaning the support surface of the buffing table. Providing a chemical solution to a support surface.

  According to one embodiment of the present invention, in the method for cleaning a support surface of a buff table, the buff table has a backing material, and the surface of the backing material becomes a support surface that supports the object to be processed.

  According to one embodiment of the present invention, in the method for cleaning a support surface of a buff table, the buff table has a transport mechanism for carrying in and / or unloading a processing object to and from the buff table, and the support surface. And a step of cleaning the transport mechanism.

  According to one embodiment of the present invention, the method for cleaning the support surface of the buff table includes the step of changing the position at which the chemical solution is supplied to the support surface while cleaning the support surface of the buff table.

  According to an embodiment of the present invention, in the method for cleaning the support surface of the buff table, the buff table is configured to supply fluid to the support surface through the buff table when the support surface of the buff table is being cleaned. A fluid passage extending to the support surface and flowing a fluid through the fluid passage.

According to one embodiment of the present invention, a method for cleaning a support surface of a buffing table includes the step of flowing pure water and / or a chemical solution through a fluid passage.
According to an embodiment of the present invention, the method for cleaning the support surface of the buff table further includes the step of cleaning the support surface of the buff table by physical contact.

  According to one embodiment of the present invention, in the method for cleaning a support surface of a buff table, the apparatus has a buff head to which a buff pad for buffing a physical object to be processed can be attached through physical contact. The method includes the step of cleaning the support surface of the buff table by physical contact using a buff head and a buff pad.

  According to one embodiment of the present invention, in a method for cleaning a support surface of a buffing table, the apparatus has a fluid passage for supplying fluid to the support surface through a buff head and a buff pad, the method comprising a fluid passage through the fluid passage. Providing a step.

According to an embodiment of the present invention, a method for cleaning a support surface of a buff table includes the step of cleaning the support surface of the buff table using a brush or a sponge material.
According to one embodiment of the present invention, in a method for cleaning a support surface of a buff table, the support of the buff table is further used using at least one of an atomizer cleaner, an ultrasonic cleaner, and a cavity jet cleaner. Cleaning the surface.

  According to one embodiment of the present invention, an apparatus for buffing a processing object, the buffing table having a support surface for supporting the processing object, and a support surface of the buffing table for cleaning. And a chemical supply means for supplying the chemical to the support surface.

  According to one embodiment of the present invention, in an apparatus for buffing a processing object, the buffing table has a backing material, and the surface of the backing material serves as a support surface that supports the processing object.

  According to one embodiment of the present invention, in the apparatus for buffing a processing object, the buffing table has a transport mechanism for carrying the processing object into and / or out of the buffing table, and supporting the buffing table. Along with the cleaning of the surface, the transport mechanism is configured to be cleaned.

  According to an embodiment of the present invention, in the apparatus for buffing a processing object, the buff table supplies fluid to the support surface through the buff table when cleaning the support surface of the buff table. A fluid passage extending to the support surface.

  According to one embodiment of the present invention, in the apparatus for buffing a processing object, the fluid passage serves as a vacuum source for vacuum-adsorbing the processing object on the support surface when buffing the processing object. Configured to be connectable.

According to one embodiment of the present invention, an apparatus for buffing a processing object has a cleaning mechanism for cleaning the support surface of the buff table by physical contact.
According to one embodiment of the present invention, an apparatus for buffing a processing object has a buff head to which a buff pad for buffing the processing object through physical contact can be attached. A buff pad is used to clean the support surface of the buff table by physical contact.

According to an embodiment of the present invention, an apparatus for buffing a processing object includes a fluid passage for supplying fluid to a support surface through a buff head and a buff pad.
According to one embodiment of the present invention, an apparatus for buffing a processing object has a buff head to which a buff pad for buffing the processing object can be attached through physical contact. The brush or sponge material for cleaning the support surface of the buff table by physical contact can be attached.

  According to one embodiment of the present invention, in an apparatus for buffing an object to be processed, a buff head to which a buff pad for buffing the object to be processed can be attached through physical contact, and a buff table support And a cleaning head to which a cleaning member, a brush, or a sponge material for cleaning the surface by physical contact can be attached.

  According to one embodiment of the present invention, in an apparatus for buffing a processing object, a roll sponge configured to clean a support surface of a buff table by physical contact by rotating on the buff table. Has material.

  According to one embodiment of the present invention, in an apparatus for buffing an object to be processed, at least an atomizer cleaner, an ultrasonic cleaner, and a cavity jet cleaner for cleaning a support surface of a buff table are further provided. Have one.

It is a figure which shows schematic structure of the buff processing module by one Embodiment of this invention. It is a figure which shows the mode of the buff processing module which wash | cleans the support surface in the state from which the wafer W was removed. It is sectional drawing which shows the buffing table and backing material by one Embodiment of this invention. It is a top view which shows washing | cleaning of the support surface of the buffing table using a buffing pad by one Embodiment of this invention. FIG. 3 shows a buff pad and a cleaning member according to an embodiment of the present invention. FIG. 3 shows a buff pad and a cleaning member according to an embodiment of the present invention. It is a top view which shows washing | cleaning of the support surface of the buffing table by another arm by one Embodiment of this invention. It is a top view which shows washing | cleaning of the support surface of the buffing table using roll sponge by one Embodiment of this invention. It is a side view which shows washing | cleaning of the support surface of the buffing table using the atomizer washing machine by one Embodiment of this invention. It is a side view which shows washing | cleaning of the support surface of a buffing table using an ultrasonic cleaner by one Embodiment of this invention. FIG. 3 is a side view illustrating cleaning of a support surface of a buffing table using a cavity jet cleaner according to an embodiment of the present invention. It is a figure which shows the timing chart of each component when wash | cleaning the support surface of a buffing table using a pure water (DIW). It is a figure which shows the timing chart of each component when wash | cleaning the support surface of a buffing table using a chemical | medical solution. It is a figure which shows the timing chart of each component when wash | cleaning the support surface of a buffing table using a non-contact-type washing machine. It is a figure which shows the timing chart of each component when wash | cleaning the support surface of a buffing table using a buffing pad. It is a figure which shows the timing chart of each component when wash | cleaning the support surface of a buff table using the rinse washing | cleaning by a buff pad and a pure water. It is a figure which shows the timing chart of each component when wash | cleaning the support surface of a buff table using a buff pad, the rinse washing | cleaning by a pure water, and a non-contact washing machine.

  Hereinafter, an embodiment of a buff processing apparatus which is a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, the same or similar elements are denoted by the same or similar reference numerals, and redundant description of the same or similar elements may be omitted in the description of each embodiment. Further, the features shown in each embodiment can be applied to other embodiments as long as they do not contradict each other.

  FIG. 1 is a diagram illustrating a schematic configuration of a buff processing apparatus according to an embodiment. The buff processing apparatus shown in FIG. 1 can be configured as a part of a CMP apparatus for polishing a substrate such as a semiconductor wafer or as a unit in the CMP apparatus. As an example, the buff processing apparatus can be incorporated into a CMP apparatus having a polishing unit, a cleaning unit, and a substrate transport mechanism, for example, a CMP apparatus disclosed in Japanese Patent Application Laid-Open No. 2010-504365. It can be used for the finishing process after the main polishing in the CMP apparatus.

In this specification, buffing includes at least one of buffing and buffing.
The buff polishing process is a process of polishing and removing the processing surface of the substrate by causing the substrate and the buff pad to move relative to each other while bringing the buff pad into contact with the substrate and interposing a slurry between the substrate and the buff pad. In the buffing treatment, when a substrate is cleaned by a physical action using a sponge material (for example, PVA sponge material), a physical action force stronger than a physical action force applied to the substrate is applied to the substrate. It can be processed. Therefore, as a buff pad, for example, a pad in which foamed polyurethane and non-woven fabric are laminated, specifically, an IC1000 (trademark) / SUBA (registered trademark) system available on the market, a suede-like porous polyurethane non-fibrous pad, For example, POLYTEX (registered trademark) available in the market can be used. Buffing treatment removes scratches or other surface layers that are contaminated by contaminants, additional removal of parts that could not be removed by main polishing in the main polishing unit, or unevenness in micro areas after the main polishing or the entire substrate It is possible to improve the morphology such as the film thickness distribution.

  The buff cleaning process is a process in which a substrate and a buff pad are moved relative to each other while a buff pad is in contact with the substrate, and a cleaning process liquid (chemical solution, or a chemical solution and pure water) is interposed between the substrate and the buff pad. This is a process for removing contaminants on the surface or modifying the treated surface. The buff cleaning process is a process in which a physical action force stronger than the physical action force applied to the substrate can be applied to the substrate when the substrate is cleaned by a physical action using a sponge material or the like. For this reason, as the buff pad, the above-described IC1000 (trademark) / SUBA (registered trademark) series, POLITEX (registered trademark), or the like is used. Furthermore, in the buff processing apparatus according to the present invention, it is also possible to use a PVA sponge as a buff pad.

  FIG. 1 is a diagram schematically illustrating a configuration of a buff processing module 300A in a state where a wafer W (substrate) is attached according to an embodiment. As shown in FIG. 1, a buff processing module 300A according to an embodiment includes a buff table 400 on which a wafer W is installed, a buff head 500 on which a buff pad 502 for performing buff processing on a processing surface of the wafer W is attached, A buff arm 600 that holds the buff head 500, a liquid supply system 700 for supplying various processing liquids, and a conditioning unit 800 for conditioning the buff pad 502 are provided.

  The buff processing module 300A can perform the buff polishing process and / or the buff cleaning process described above. Further, as will be described in detail later, the buff processing module 300A can be used to clean the support surface 402 of the buff table 400 with the wafer W shown in FIG. 2 removed. In addition, a cleaning brush or sponge material may be attached to the buff head 500 in place of the buffing pad 502 for buffing for cleaning described later.

  The buff table 400 has a support surface 402 for supporting the wafer W. The support surface 402 has an opening 404 of a fluid passage 410 (see FIG. 3) used for adsorbing the wafer W. The fluid passage 410 is connected to a vacuum source (not shown) and can vacuum-suck the wafer W. The wafer W may be attracted to the buffing table 400 via the backing material 450 (see FIG. 3). The backing material 450 can be formed from, for example, polyurethane foam having elasticity. The backing material 450 is a cushioning material between the buffing table 400 and the wafer W, and can prevent the wafer W from being scratched or can reduce the influence of the surface irregularities of the buffing table 400 on the buffing process. it can. The backing material 450 can be attached to the surface of the buffing table 400 with an adhesive tape. A known material can be used as the backing material 450, and a material provided with a through hole 452 at a position corresponding to the opening 402 of the buff table 400 can be used (see FIG. 3).

  In the present specification, when the wafer W is attached to the buffing table 400 via the backing material 450, the surface of the backing material 450 in a state where the backing material 450 is attached becomes a “support surface” for supporting the wafer W. When the wafer W is directly attracted to the buffing table 400 without using the backing material 450, the surface of the buffing table becomes a “supporting surface” that supports the wafer W. Hereinafter, the term “support surface” or “support surface of a buff table” includes both cases.

Furthermore, the buffing table 400 has a lift pin 480 (see FIG. 3) for receiving the wafer W transferred by a transfer robot (not shown) as a transfer mechanism on the table 400 and placing the wafer W on the buffing table 400 thereon. A plurality of lift pins 480 are arranged along the outer periphery of the buff table 400, and the lift pins 480 extend and contract by a mechanism (not shown). The lift pins 480 support and receive the outer peripheral portion of the wafer W with the lift pins 480 protruding, and then the lift pins 480 move backward to place the wafer W on the support surface 402 of the buff table 400. After the buffing process is finished, the lift pins 480 protrude to support and lift the outer periphery of the wafer W, and the transfer robot scoops up the wafer W from below.

  Further, the buffing table 400 can be rotated around the rotation axis A by a driving mechanism (not shown). The buff head 500 is configured so that it can be raised and lowered. The buff pad 502 is attached to the surface of the buff head 500 that faces the wafer W. The buff pad 502 is pressed against the wafer W held on the support surface 402 of the buff table 400 when the buff head 500 is lowered. The buff arm 600 rotates the buff head 500 around the rotation axis B and can swing the buff head 500 in the radial direction of the wafer W as indicated by an arrow C. Further, the buff arm 600 can swing the buff head 500 to a position where the buff pad 502 faces the conditioning unit 800.

  The liquid supply system 700 includes a pure water nozzle 710 for supplying pure water (DIW) to the processing surface of the wafer W. The pure water nozzle 710 is connected to a pure water supply source 714 via a pure water pipe 712. The pure water pipe 712 is provided with an on-off valve 716 that can open and close the pure water pipe 712. By controlling the opening / closing of the on-off valve 716 using a control device (not shown), pure water can be supplied to the processing surface of the wafer W or the support surface 402 for supporting the wafer W of the buff table 400 at an arbitrary timing. it can.

  The pure water nozzle 710 can change the direction (swing) in the in-plane direction (in-plane direction of the xy plane) of the support surface 402 of the buff table 400. Alternatively or additionally, the pure water nozzle 710 can change the direction (tilt) in the in-plane direction (in-plane direction of the zx plane) perpendicular to the support surface 402 of the buff table 400. Further, as an alternative or in addition, the position of the pure water nozzle 710 can be changed in a direction perpendicular to the support surface 402 of the buff table 400 (z direction). A mechanism for changing the direction and position of the pure water nozzle 710 may be arbitrary.

  In addition, the liquid supply system 700 includes a first chemical liquid nozzle 720 for supplying a chemical liquid (Chemi) to the processing surface of the wafer W. The first chemical nozzle 720 supplies a chemical to the surface of the wafer W in the chemical cleaning after the buff cleaning process or the buff polishing process. The first chemical liquid nozzle 720 is connected to the first chemical liquid supply source 724 via the chemical liquid pipe 722. The chemical solution pipe 722 is provided with an on-off valve 726 that can open and close the chemical solution pipe 722. By controlling the opening / closing of the on-off valve 726 using a control device (not shown), the chemical solution can be supplied to the processing surface of the wafer W or the support surface 402 for supporting the wafer W of the buff table 400 at an arbitrary timing. .

  The first chemical liquid nozzle 720 can change the direction (swing) in the in-plane direction (in-plane direction of the xy plane) of the support surface 402 of the buff table 400. Alternatively or additionally, the first chemical nozzle 720 can change the direction (tilt) in an in-plane direction (in-plane direction of the zx plane) perpendicular to the support surface 402 of the buff table 400. Further, alternatively or additionally, the position of the first chemical liquid nozzle 720 can be changed in a direction (z direction) perpendicular to the support surface 402 of the buff table 400. A mechanism for changing the direction and position of the first chemical nozzle 720 may be arbitrary.

In addition, the liquid supply system 700 includes a second chemical liquid nozzle 720-2 for supplying a chemical liquid to the support surface 402 for supporting the wafer W of the buff table 400. The second chemical liquid nozzle 720-2 sprays the chemical liquid onto the support surface 402 when cleaning the support surface 402. The 2nd chemical | medical solution nozzle 720-2 is connected to the 2nd chemical | medical solution supply source 724-2 via the chemical | medical solution piping 722-2. The chemical solution pipe 722-2 includes an on-off valve 726 that can open and close the chemical solution pipe 722-2.
-2 is provided. By controlling opening / closing of the on-off valve 726-2 using a control device (not shown), the chemical solution can be supplied to the support surface 402 at an arbitrary timing.

Similarly to the first chemical liquid nozzle 720, the second chemical liquid slew 720-2 can change the direction and / or height of the nozzle.
The chemical solution supplied from the first chemical solution nozzle 720-2 may be different from the chemical solution supplied from the first chemical solution nozzle 720, or the same chemical solution may be used. When the same chemical solution is used, the second chemical solution nozzle 720-2 and the piping associated therewith can be omitted.

  The buff processing module 300 </ b> A according to the illustrated embodiment has pure water, a buff arm 600, a buff head 500, and a buff pad 502 with a pure water, a support surface 420 for supporting the wafer W processing surface or the wafer W of the buffing table 400. A chemical solution or slurry can be selectively supplied.

  That is, the branched pure water pipe 712 a branches from between the pure water supply source 714 and the on-off valve 716 in the pure water pipe 712. Further, a branch chemical liquid pipe 722 a branches from between the first chemical liquid supply source 724 and the on-off valve 726 in the chemical liquid pipe 722. The branched pure water pipe 712 a, the branched chemical liquid pipe 722 a, and the slurry pipe 732 connected to the slurry supply source 734 merge into the liquid supply pipe 740. The branch pure water pipe 712a is provided with an on-off valve 718 that can open and close the branch pure water pipe 712a. The branch chemical liquid pipe 722a is provided with an on-off valve 728 that can open and close the branch chemical liquid pipe 722a. The slurry pipe 732 is provided with an on-off valve 736 that can open and close the slurry pipe 732.

  The first end of the liquid supply pipe 740 is connected to three lines of a branched pure water pipe 712 a, a branched chemical liquid pipe 722 a, and a slurry pipe 732. The liquid supply pipe 740 extends through the inside of the buff arm 600, the center of the buff head 500, and the center of the buff pad 500. The second end of the liquid supply pipe 740 opens toward the processing surface of the wafer W or the support surface 402 for supporting the wafer W of the buff table 400. A control device (not shown) controls the opening / closing of the opening / closing valve 718, the opening / closing valve 728, and the opening / closing valve 736, thereby supporting the processing surface of the wafer W or the wafer W of the buffing table 400 at an arbitrary timing. Any one of pure water, chemical solution, and slurry, or a mixed solution of any combination thereof can be supplied to the support surface 402.

  The buff processing module 300A according to the illustrated embodiment supplies the processing liquid to the wafer W via the liquid supply pipe 740 and rotates the buff table 400 around the rotation axis A to press the buff pad 502 against the processing surface of the wafer W. The wafer W can be buffed by swinging in the direction of arrow C while rotating the buff head 500 around the rotation axis B.

  A conditioning unit 800 shown in FIG. 1 is a member for conditioning the surface of the buff pad 502. The conditioning unit 800 includes a dress table 810 and a dresser 820 installed on the dress table 810. The dress table 810 can be rotated around the rotation axis D by a driving mechanism (not shown). The dresser 820 is formed of a diamond dresser, a brush dresser, or a combination thereof.

When conditioning the buff pad 502, the buff processing module 300A rotates the buff arm 600 until the buff pad 502 is located at a position facing the dresser 820 (see FIG. 2). The buff processing module 300A rotates the dress table 810 around the rotation axis D and rotates the buff head 500, and moves the buff pad 502 to the dresser 8.
The buff pad 502 is conditioned by pressing it onto 20.

  In the illustrated embodiment, at least a portion of the buff table 400 is used to prevent foreign matter from splashing onto the wafer W on the buff table 400 and contaminating the wafer W or the support surface 402, such as during conditioning of the buff pad 502. An enclosing cover 470 can be included (see FIG. 3). The cover 470 in FIG. 3 surrounds the buff table 400 in the circumferential direction. Further, the height of the cover 470 can be changed.

  FIG. 2 shows a state where the support surface 402 for supporting the wafer W of the buff table 400 is cleaned after the buffing process of the wafer W is completed and the wafer W is taken out of the buff table 400. In the example shown in FIG. 2, the buff pad 502 is conditioned in the conditioning unit 800 when the support surface 402 is being cleaned. Alternatively, when the support surface 402 is being cleaned, the buff head 500 may be present at a raised position away from the support surface 402 of the buff table 400.

  When cleaning the support surface 402, the support surface 402 is cleaned by spraying a chemical solution from the second chemical solution nozzle 720-2 connected to the second chemical solution supply source 724-2 on the support surface 402. By using the chemical solution, it is possible to more effectively clean the abrasive grains and the polishing product attached to the support surface 402. Thereafter, pure water is supplied from the pure water nozzle 710 to the support surface 402, and the support surface 402 is further cleaned.

  Similar to the first chemical liquid nozzle 720, the second chemical liquid nozzle 720-2 can change the direction or position, and can wash the support surface 402 while changing the position where the chemical liquid is supplied.

  The chemical liquid supplied from the second chemical liquid nozzle 720-2 may be different from the chemical liquid supplied from the first chemical liquid nozzle 720. Or you may use the same chemical | medical solution. When the same chemical liquid is used for the second chemical liquid nozzle 720-2 and the first chemical liquid nozzle 720, the second chemical liquid nozzle 720-2 can be omitted.

  FIG. 3 is a view schematically showing a cross section of the buffing table 400 to which the backing material 450 is attached. As described above, the buff table 400 includes the fluid passage 410 that is used to vacuum-suck the wafer W onto the support surface 402. The fluid passage 410 further includes a nitrogen source 744 used for desorbing the wafer W, a pure water supply source 714 that can be optionally used when cleaning the support surface 402 of the buff table 400, and a second chemical solution. The supply source 724-2 can be connected to the first chemical solution supply source 724 when the second chemical solution supply source 724-2 and the second chemical solution nozzle 720-2 are omitted. When the wafer W is detached from the buff table 400, pure water may be supplied from the pure water supply source 714, or a mixture of pure water and nitrogen may be supplied. Open / close valves 750, 752, and 754 are respectively provided in pipes that supply pure water, chemical solution, and nitrogen gas to the fluid passage 410 of the buff table 400. By controlling the opening and closing of the on-off valves 750, 752, and 754 using a control device (not shown), pure water, a chemical solution, and nitrogen gas are supplied to the support surface 402 through the fluid passage 410 of the buff table 400 at an arbitrary timing. Can do.

  By supplying pure water and / or chemical liquid from the fluid passage 410 during the cleaning of the buffing table 400, it is possible to prevent foreign matters from entering the buffing table 400 during the cleaning, and to improve the cleaning efficiency. be able to. Here, as the chemical solution for cleaning the fluid passage 410, the same chemical solution as that for cleaning the support surface 402 of the buff table 400 is used, but different chemical solutions may be used.

  As shown in FIG. 4a, the support surface 402 may be cleaned by contacting the support surface 402 while rotating the buff pad 502 used for buffing. As a result, the foreign matter on the support surface 402 can be removed by applying a physical force. In this case, a second chemical liquid supply source 724-2 for cleaning the support surface 402 may be connected to the liquid supply pipe 740 of the liquid supply system 700 shown in FIG. As shown in FIGS. 4b and 4c, a buffing pad 502 for buffing processing is attached to the center of the buffing head 500, and a cleaning member 654 for cleaning the support surface 402 is attached to the outer periphery of the buffing pad. May be. FIG. 4 b shows a state during the buffing process, and the buff pad 502 protrudes from the cleaning member 654. FIG. 4 c shows a state during cleaning, and the cleaning member 654 protrudes from the buff pad 502. The cleaning member 654 is, for example, a brush or a sponge material. Accordingly, the cleaning member 654 used only for cleaning the support surface 402 can be operated by contacting the support surface 402 using the same buff arm 600. When cleaning the support surface 402 while applying a physical force, it is performed while supplying pure water from the pure water nozzle 710, or while supplying pure water or a chemical solution through the liquid supply pipe 740, It can be carried out while supplying the chemical solution from the two chemical solution nozzles 720-2, or any combination thereof.

  As an embodiment of the present disclosure, the buff processing module 300A includes a dedicated cleaning arm 650 for cleaning the support surface 402 of the buff table 400, a cleaning head 652, and a cleaning member, which are different from the buff arm 600 to which the buff pad 502 is attached. 654 can be provided (see FIG. 5). The cleaning arm 650, the cleaning head 652, and the cleaning member 654 can be configured similarly to the buff arm 600, the buff head 500, and the buff pad 502, respectively, and the cleaning arm 650, the cleaning head 652, and the cleaning member 654 are interposed therebetween. Thus, it may or may not be possible to selectively supply pure water and / or chemical liquid to the support surface 402 of the buff table 400.

The cleaning member 654 can have the same configuration as the buff pad 502. Further, a brush or a sponge material may be used as the cleaning member 654.
As an embodiment of the present disclosure, the buff processing module 300A includes a roll sponge 656 for cleaning the support surface 402 of the buff table 400 (see FIG. 6). The roll sponge 656 is configured to rotate while in contact with the support surface 402 of the buff table 400 to clean the support surface 402. Any mechanism can be utilized to move and rotate the roll sponge 656 to the support surface 402 of the buff table 400.

  As an embodiment of the present disclosure, the buff processing module 300A includes at least one of an atomizer cleaner 680, an ultrasonic cleaner 682, and a cavity jet cleaner 684 for cleaning the support surface 402 of the buff table 400. (FIGS. 7, 8, and 9). These non-contact cleaning machines 680, 682, and 684 are difficult to remove foreign substances by cleaning with pure water or chemicals when there is a risk of damaging the backing material 450 by contact cleaning using a buff pad 502 or sponge material. In such a case, it is difficult to remove foreign matter with a combination of pure water / chemical solution and contact-type cleaning, or when removing foreign matter that has entered the recess of the backing material 450 or the like, an intricate transfer mechanism near the buffing table 400 (for example, lift pins) 480) is effective for removing foreign matter adhering to 480).

  As shown in FIG. 7, the atomizer cleaner 680 is for cleaning the support surface 402 by injecting high-pressure pure water and gas onto the support surface 402 of the buff stage 400. An atomizer washer 680, a known one, etc. can be used.

  As shown in FIG. 8, the ultrasonic cleaner 682 is for removing foreign substances and the like attached to the support surface 402 by applying ultrasonic waves to the support surface 402 of the buff stage 400. As the ultrasonic cleaner 682, any known one such as a known one can be used.

  As shown in FIG. 9, the cavity jet cleaning machine 684 is for applying high-pressure water and low-pressure water to the support surface 402 of the buff stage 400 to remove foreign matters and the like attached to the support surface 402. As the cavity jet washer 684, an arbitrary one such as a known one can be used.

  Up to now, cleaning of the support surface 402 of the buff stage 400, that is, by the physical contact of pure water, chemical solution, buff pad 502, or the cleaning member 654 dedicated to buff cleaning, or by the non-contact cleaning machines 680, 682, 684 of the support surface 402. Although the cleaning has been described, the transport mechanism (for example, the lift pin 480) of the buff table 400 can also be cleaned by these means.

Hereinafter, as an embodiment of the present disclosure, a process of cleaning the support surface 402 that supports the wafer W of the buff table 400 using the buff processing module 300A will be described.
FIG. 10 shows a timing chart of each component when the support surface 402 of the buff table 400 is cleaned using pure water (DIW). In the same figure, the horizontal axis is the time axis, “buffing”, “substrate unloading” for transferring the substrate after the buffing is completed, “cleaning” for cleaning the support surface 402 of the buffing table 400, and after the cleaning of the support surface 402 Each phase of “substrate loading” for buffing the next substrate is shown. Each component is listed in the vertical direction of the figure, and each operation is shown.

  As shown in FIG. 10, the buffing table 400 is rotating during the buffing process, and the buffing arm 600 is slid outward from the center of the wafer W (see FIG. 1 and the like). During the buffing process, the substrate (wafer W) is vacuum-sucked to the support surface 402 of the buff stage 400. Details of the buff processing are not the subject of the present disclosure, and thus the description thereof is omitted.

  When the buffing process is completed, the buffing stage 400 finishes rotating, and in order to release the wafer W, nitrogen gas is supplied from the fluid passage 410, and the lift of the lift pins 480 lifts the wafer W. The released wafer W is moved to the next processing section by the substrate transfer robot.

When the substrate is unloaded, the support surface 402 of the buff table 400 is cleaned. FIG. 10 shows an example of cleaning using pure water (DIW). During cleaning, pure water is supplied from the pure water nozzle 710 to the center of the support surface 402 while rotating the buff stage 400 (see “DIW rinse” in the figure). Since the buffing table 400 is rotating, a flow of pure water is formed from the center of the support surface 402 to the outside by centrifugal force, so that foreign matter is pushed away. At this time, by changing the direction and height of the pure water nozzle 710 so that pure water is supplied from the center of the support surface 402 to the outside, the flow from the center of the support surface 402 to the outside is more effectively performed. And the foreign matter can be washed away (see “rinse nozzle movement (swing, tilt, height)” in FIG. 10). During cleaning, pure water is supplied to the support surface 402 via the fluid passage 410 of the buffing table 400 (see “substrate release DIW” in the figure), so that foreign matter is mixed into the buffing table 400. To prevent. The rotation speed of the buff table 400 may be a 50~1000min ^-1, 100~200min ^-1 are preferred. However, foreign matter actively using centrifugal force to remove from the support surface 402 of the buff table 400 may be used higher rotational speeds, such as 500 min ^-1 or more or 1000min ^-1 or more.

FIG. 10 shows an example of cleaning using only pure water (DIW), but the portion surrounded by the thick line in FIG. 10 can be arbitrarily changed depending on the content of cleaning. Further, depending on the content of the cleaning, the buff processing module 300A does not necessarily have all of the above-described configurations. For example, in the case of cleaning using only pure water in FIG. 10, there may be no configuration for supplying pure water and / or chemical liquid through the buff head 500. Further, in the example shown in FIG. 10, the atomizer cleaner 680, the ultrasonic cleaner 682, and the cavity jet cleaner 684 may be omitted.

  FIG. 11 shows an example of a timing chart when the support surface 402 of the buff table 400 is cleaned using a chemical solution. In this example, during cleaning, the chemical solution is supplied from the second chemical solution nozzle 720-2 to the support surface 402 while rotating the buff table 400. The second chemical liquid nozzle 720-2 can be effectively cleaned by changing the direction and height in the same manner as in the example of FIG. 10 so as to supply the chemical liquid from the center of the support surface 402 toward the outside. In the final stage of cleaning, the supply of the chemical solution from the second chemical solution nozzle 720-2 is stopped, and pure water is supplied from the pure water nozzle 710 to the support surface 402, thereby washing away the chemical solution with pure water. In the example of FIG. 11, pure water is supplied from below the support surface 402 through the fluid passage 410 at the beginning and end of cleaning. By introducing pure water into the fluid passage 410 at the beginning of cleaning and filling the fluid passage 410 with pure water, foreign matter is prevented from entering the fluid passage 410. The middle part of the cleaning stops the injection of pure water into the fluid passage 410 and prevents the chemical solution for cleaning the support surface 402 from being diluted. At the end of cleaning, pure water is again injected into the fluid passage 410 to finally wash away foreign matter in the fluid passage. Alternatively, the fluid passage 410 may be cleaned by injecting a chemical solution into the fluid passage 410 from the second chemical supply source 724-2.

  Any kind of chemical solution can be used for cleaning the support surface 402 of the buffing table 400 using the chemical solution depending on the application. For example, when dust and organic substances on the support surface 402 are washed away, particles of the support surface 402 can be removed by the action of zeta potential by using an alkaline chemical such as ammonia + hydrogen peroxide solution. Moreover, adhesion of a foreign material can be suppressed by hydrophilizing the support surface by using a surfactant.

  When the foreign matter to be removed from the support surface 402 is a metal ion such as copper, iron, aluminum, etc., the re-adhesion of the metal ion or the like is caused by the chelate effect by using an acid chemical solution, citric acid, oxalic acid and an additive Can be prevented.

  Also in the example shown in FIG. 11, as in the example of FIG. 10, the configuration for supplying pure water and / or chemical liquid through the buff head 500, the atomizer cleaner 680, the ultrasonic cleaner 682, and the cavity jet cleaner 684. Is not necessary.

  FIG. 12 shows an example of a timing chart when the support surface 402 is cleaned using the atomizer 680, the ultrasonic cleaner 682, or the cavity jet cleaner 684. In this example, during cleaning, the support surface 402 of the buff stage 400 is cleaned by the atomizer cleaner 680, the ultrasonic cleaner 682, or the cavity jet cleaner 684 while rotating the buff table 400. During cleaning, the ultrasonic cleaner 682 or the cavity jet cleaner 684 may be swung from the center of the support surface 402 toward the outer periphery (indicated by a broken line in FIG. 12). On the other hand, when the cleaning range of the entire support surface 402 (the radius of the support surface 402) is provided as in the atomizer cleaner 680, the entire support surface 402 can be cleaned by rotating the buff table 400. Therefore, no peristalsis is required (indicated by the solid line in FIG. 12). In the illustrated example, at the end of cleaning, cleaning by the atomizer cleaning machine 680, the ultrasonic cleaning machine 682, or the cavity jet cleaning machine 684 is stopped, and pure water is supplied from the pure water nozzle 710 to the support surface 402 to support the support surface. Rinse 402. During cleaning, pure water is supplied to the support surface 402 via the fluid passage 410 of the buff table 400, thereby preventing foreign matter from entering the buff table 400.

FIG. 13 shows an example of a timing chart when the support surface 402 of the buff table 400 is cleaned using the buff pad 502. In this example, the buffing table 400 is rotated, and at the same time, the buffing head 502 is pressed against the support surface 402, and the buffing head 500 is swung outward from the center of the supporting surface 402 while rotating (see “Buff arm position” in FIG. 13). (See FIG. 4). At this time, pure water and / or chemical liquid can be supplied to the support surface 402 through the buff head 500 and the buff pad 502 by appropriately controlling the on-off valves 718 and 728. In the case of using a chemical solution, an arbitrary one such as the chemical solution described with reference to FIG. 11 can be used. In the example shown in FIG. 13, pure water is supplied from the pure water nozzle 710 to the support surface 402 at the end of cleaning to rinse the support surface 402. In addition, during cleaning, pure water is supplied to the support surface 402 via the fluid passage 410 of the buff table 400, thereby preventing foreign matters from entering the buff table 400. When the cleaning is finished, the buff pad 502 is moved to the dresser 820 while the next substrate is loaded on the support surface 402, and conditioning is performed for buffing the next substrate.

  In the example shown in FIG. 13, it is described that the support surface 402 of the buffing table 400 is cleaned using the buffing pad 502 used for the buffing process, but it is different from the buffing pad 502 used for the buffing process. A dedicated cleaning member, brush, or sponge material may be attached to the buff head 500 for cleaning. In the example shown in FIG. 13, the cleaning is performed using the buff arm 600, the buff head 500, and the buff pad 502. However, the dedicated cleaning arm 650, the cleaning head 652, and the cleaning member having similar structures are described. The support surface 402 may be cleaned using 654 (including a brush and a sponge material) (see FIG. 5).

  FIG. 14 shows an example of a timing chart when the cleaning using pure water shown in FIG. 10 and the cleaning using the buff pad 502 shown in FIG. 13 are combined. In the cleaning of this example, while supplying pure water or a chemical solution from the buff pad 502, the buff pad 502 is swung outward from the center of the support surface 402 to clean the support surface 402 in a contact manner (see FIG. 4). The pure water nozzle 710 is operated so as to follow the buff pad 502 to supply pure water to the support surface 402 from the center of the support surface 402 to the outside, thereby continuously washing away the portion subjected to contact cleaning. In the example of FIG. 14, the buff pad 502 is swung from the center of the support surface 402 to the outside, and the timing of supplying pure water from the center of the support surface 402 to the outside from the pure water nozzle 710 is shifted three times and repeated. However, the number of repetitions can be arbitrary. Further, as in the other examples, during cleaning, pure water is supplied to the support surface 402 via the fluid passage 410 of the buff table 400, thereby preventing foreign matter from entering the buff table 400. In the example of FIG. 14, the cleaning with the pure water nozzle 710 may be performed with the chemical cleaning using the second chemical nozzle 720-2.

  In the example shown in FIG. 14, it is described that the support surface 402 is cleaned using the buff pad 502 used for the buffing process. Cleaning may be performed by attaching a cleaning member, a brush, or a sponge material to the buff head 500. In the example illustrated in FIG. 14, the cleaning is performed using the buff arm 600, the buff head 500, and the buff pad 502. However, the dedicated cleaning arm 650, the cleaning head 652, and the cleaning member having similar structures are described. The support surface 402 may be cleaned using 654 (including a brush and a sponge material) (see FIG. 5).

FIG. 15 shows a timing chart in which pure water, a non-contact cleaning machine (atomizer cleaning machine 680, ultrasonic cleaning machine 682, cavity jet cleaning machine 684, etc.) and contact cleaning by a buff head 502 are combined. In the illustrated example, the position where pure water is supplied by the pure water nozzle 710, the positions of the non-contact cleaning machines 680, 682, 684, and the position of the buff head 502 are swung so as to follow each other at different timings. The In the example shown,
First, the cleaning is performed by the non-contact type cleaning machines 680, 682, and 684, the foreign matter is lifted, the contact cleaning is performed by the buff head 502, the foreign matter is swept out, and finally the foreign matter is washed away with pure water. To be. In the example of FIG. 15, the order is described above, but the order is not limited to the above, and the order may be arbitrarily selected. As in the other examples, during cleaning, pure water is supplied to the support surface 402 via the fluid passage 410 of the buff table 400, thereby preventing foreign matters from entering the buff table 400.

  In the example shown in FIG. 15, it is described that the support surface 402 is cleaned using the buff pad 502 used for the buffing process. However, the dedicated buffing pad 502 used for the buffing process is different from the dedicated one. A cleaning member, a brush, or a sponge material may be attached to the buff head 500 for cleaning. In the example shown in FIG. 15, the cleaning is performed using the buff arm 600, the buff head 500, and the buff pad 502. However, the dedicated cleaning arm 650, the cleaning head 652, and the cleaning member having similar structures are described. The support surface 402 may be cleaned using 654 (including a brush and a sponge material) (see FIG. 5).

  As described above, the buff processing apparatus and the cleaning method having the function of cleaning the support surface of the buff table have been described, but the present invention is not limited to the above-described embodiment. The features of the above-described embodiments can be combined or exchanged as long as they do not contradict each other. For example, in the above-described embodiment, the buff table is illustrated and described as being horizontal and the support surface is vertically upward. However, the buff processing device is arranged such that the support surface of the buff table faces the horizontal direction. You can also. In the above-described embodiment, it has been described that a dedicated buff pad for cleaning the support surface 402 of the buff table 400 can be attached to the buff head 502 in place of the buff pad 502 for buff processing. Or you may comprise so that a brush and sponge material may be attached to the other location of the buff arm 600. FIG.

300A Buff processing module 400 Buff table 402 Support surface 404 Opening 410 Fluid passage 450 Backing material 480 Lift pin 500 Buff head 502 Buff pad 600 Buff arm 650 Cleaning arm 652 Cleaning head 654 Cleaning member 656 Roll sponge 680 Atomizer cleaning machine 682 Ultrasonic cleaning machine 684 Cavity Jet cleaning machine 710 Pure water nozzle 714 Pure water supply source 720 First chemical solution nozzle 720-2 Second chemical solution nozzle 724 First chemical solution supply source 724-2 Second chemical solution supply source

Claims (39)

An apparatus for buffing a processing object,
A buffing table having a support surface for supporting the object to be processed;
A nozzle for supplying a chemical solution for cleaning the support surface of the buff table to the support surface;
Having a device. The apparatus of claim 1, comprising:
The buffing table has a backing material, and the surface of the backing material serves as the support surface for supporting the object to be processed.
apparatus. The apparatus according to claim 1 or 2, comprising:
The nozzle is configured to be changeable in an in-plane direction of the buff table.
apparatus. An apparatus according to any one of claims 1 to 3,
The nozzle is configured to be changeable in an in-plane direction perpendicular to the plane of the buffing table,
apparatus. An apparatus according to any one of claims 1 to 4,
The nozzle is configured to be able to change its position in a direction perpendicular to the plane of the buff table.
apparatus. An apparatus according to any one of claims 1 to 5,
The buff table has a fluid passage extending to the support surface for supplying fluid to the support surface through the buff table when cleaning the support surface of the buff table.
apparatus.   The apparatus according to claim 6, wherein the fluid passage is configured to be connected to a source of pure water and / or a chemical solution. The apparatus according to claim 6 or 7, wherein the fluid passage is configured to be connectable to a vacuum source for vacuum-adsorbing the processing object on the support surface when buffing the processing object.
apparatus. A device according to any one of claims 1 to 8,
A cleaning mechanism for cleaning the support surface of the buffing table by physical contact;
apparatus. The apparatus of claim 9, comprising:
A buff head capable of attaching a buff pad for buffing the object to be treated through physical contact;
Configured to physically clean the support surface of the buffing table using the buffing head and the buffing pad,
apparatus. The apparatus of claim 10, comprising:
A fluid passage for supplying fluid to the support surface through the buff head and the buff pad;
apparatus. The apparatus of claim 9, comprising:
A buff head capable of attaching a buff pad for buffing the object to be treated through physical contact;
The buff head is configured to be able to attach a brush or sponge material for cleaning the support surface of the buff table by physical contact.
apparatus. The apparatus of claim 9, comprising:
A buff head capable of attaching a buff pad for buffing the object to be treated through physical contact;
A cleaning member for cleaning the support surface of the buffing table by physical contact, a brush, or a cleaning head to which a sponge material can be attached.
apparatus. The apparatus of claim 9, comprising:
Having a roll sponge material configured to rotate on the buff table to clean the support surface of the buff table by physical contact;
apparatus. 15. An apparatus according to any one of claims 1 to 14,
And further comprising at least one of an atomizer cleaner, an ultrasonic cleaner, and a cavity jet cleaner for cleaning the support surface of the buffing table,
apparatus. An apparatus according to any one of claims 1 to 15,
The buffing table has a transport mechanism for carrying in and / or unloading a processing object from the buffing table,
The transport mechanism is configured to be cleaned along with the cleaning of the support surface.
apparatus. A method for cleaning a support surface of a buffing table that supports a processing object in an apparatus for buffing the processing object,
Supplying a chemical solution for cleaning the support surface of the buffing table to the support surface,
Method. The method of claim 17, comprising:
The buffing table has a backing material, and the surface of the backing material serves as the support surface for supporting the object to be processed.
Method. The method according to claim 17 or 18, comprising:
The buffing table has a transport mechanism for carrying in and / or unloading a processing object from the buffing table,
Cleaning the transport mechanism together with cleaning the support surface,
Method. A method according to any one of claims 17 to 19, comprising
Changing the position of supplying a chemical to the support surface during cleaning of the support surface of the buffing table,
Method. A method according to any one of claims 17 to 20, comprising
The buff table has a fluid passage extending to the support surface for supplying fluid to the support surface through the buff table when the support surface of the buff table is being cleaned;
Flowing fluid through the fluid passageway,
Method. The method of claim 21, comprising:
Flowing pure water and / or chemical into the fluid passage,
Method. 23. A method according to any one of claims 17 to 22, comprising
And cleaning the support surface of the buffing table by physical contact.
Method. 24. A method according to any one of claims 17 to 23, comprising:
The apparatus has a buff head to which a buff pad for buffing the object to be processed through physical contact can be attached,
The method includes the step of cleaning the support surface of the buff table by physical contact using the buff head and the buff pad.
Method. 25. The method of claim 24, comprising:
The apparatus has a fluid passage for supplying fluid to the support surface through the buff head and the buff pad;
Providing the fluid through the fluid passageway.
Method. 24. The method of claim 23, comprising:
Cleaning the support surface of the buffing table using a brush or sponge material,
Method. 27. A method according to any one of claims 17 to 26, comprising:
And cleaning the support surface of the buffing table using at least one of an atomizer cleaner, an ultrasonic cleaner, and a cavity jet cleaner.
Method. An apparatus for buffing a processing object,
A buffing table having a support surface for supporting the object to be processed;
A chemical solution supply means for supplying a chemical solution for cleaning the support surface of the buff table to the support surface;
Having a device. 30. The apparatus of claim 28, wherein
The buffing table has a backing material, and the surface of the backing material serves as the support surface for supporting the object to be processed.
apparatus. 30. Apparatus according to claim 28 or 29, comprising:
The buffing table has a transport mechanism for carrying in and / or unloading a processing object from the buffing table,
The transport mechanism is configured to be cleaned along with the cleaning of the support surface.
apparatus. A device according to any one of claims 28 to 30, comprising
The buff table has a fluid passage extending to the support surface for supplying fluid to the support surface through the buff table when cleaning the support surface of the buff table.
apparatus. 32. The apparatus according to claim 31, wherein the fluid passage is configured to be connectable to a vacuum source for vacuum-adsorbing the processing object on the support surface when buffing the processing object.
apparatus. A device according to any one of claims 28 to 32, wherein
A cleaning mechanism for cleaning the support surface of the buffing table by physical contact;
apparatus. 34. The device of claim 33, comprising:
A buff head capable of attaching a buff pad for buffing the object to be treated through physical contact;
Configured to physically clean the support surface of the buffing table using the buffing head and the buffing pad,
apparatus. 35. The apparatus of claim 34, wherein
A fluid passage for supplying fluid to the support surface through the buff head and the buff pad;
apparatus. 34. The device of claim 33, comprising:
A buff head capable of attaching a buff pad for buffing the object to be treated through physical contact;
The buff head is configured to be able to attach a brush or sponge material for cleaning the support surface of the buff table by physical contact.
apparatus. 34. The device of claim 33, comprising:
A buff head capable of attaching a buff pad for buffing the object to be treated through physical contact;
A cleaning member for cleaning the support surface of the buffing table by physical contact, a brush, or a cleaning head to which a sponge material can be attached.
apparatus. 34. The device of claim 33, comprising:
Having a roll sponge material configured to rotate on the buff table to clean the support surface of the buff table by physical contact;
apparatus. A device according to any one of claims 28 to 38,
And further comprising at least one of an atomizer cleaner, an ultrasonic cleaner, and a cavity jet cleaner for cleaning the support surface of the buffing table,
apparatus.

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