JP2016021527A - Support jig for semiconductor wafer and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor wafer supporting jig that is not an obstacle to safe mounting/demounting of a semiconductor wafer and can exclude a risk of inducing complexity of the construction of the jig and complication of the manufacturing process, and a manufacturing method for the same.SOLUTION: A semiconductor wafer supporting jig has a support board 10 confronting a thin semiconductor wafer 1, and plural adhesive layers 11 for adhesively holding the semiconductor wafer 1. The support board 10 is formed in the same shape as the semiconductor wafer 1, a part of the surface of the support board 10 is provided with plural adhesive layers 11 that are directly adhesively attached to the confronting surface of the semiconductor wafer 1 to compartment a space 12 between the confronting surface and the adhesive layers 11, and the plural adhesive layers 11 are arranged so that the space 12 compartmented by the semiconductor wafer 1 and the adhesive layers 11 is made to intercommunicate with the outside of the support board 10, thereby enabling air to flow through the space 12. The plural adhesive layers 11 are partially arranged and formed on a part of the surface of the support board 10 to suppress adhesive force, so that the thin and fragile semiconductor wafer 1 can be safely and easily exfoliated from the adhesive layers 11.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a simple semiconductor wafer support jig capable of safely handling a thin and easily bent semiconductor wafer in a semiconductor device manufacturing process, and a method for manufacturing the same.

  When the pre-process of the manufacturing process is completed, the semiconductor wafer is ground to a thickness of 100 μm or less in the back grinding process from the viewpoint of adapting to a thin semiconductor package, and is subjected to a dicing process, etc. Since it is thin and easily bent and easily damaged, in the state as it is, it hinders subsequent operations. Therefore, the back-ground thin semiconductor wafer is held by a dedicated jig and handled in a state in which strength and rigidity are ensured.

  As a jig of this type, although not shown, for example, (1) a semiconductor ring is supported on a rigid ring via a temporary adhesive or solder, and the ring and the semiconductor wafer are integrated to increase strength and rigidity. A type that is handled below the melting point of temporary adhesive or solder. (2) Adhesion between the surface of the support substrate and the weak adhesive surface of the flexible adhesive film layer, and attachment / detachment of the strong adhesive surface of the adhesive film layer and the thin semiconductor wafer. A type that adheres freely and integrates the support substrate and the semiconductor wafer to increase the strength and rigidity. (3) A plurality of thin film semiconductor wafers on the surface of the adhesive film layer by integrating the adhesive film layer on the heat-resistant plate. A holding protrusion is erected, a gap for air circulation is formed between the plurality of holding protrusions, and a peripheral wall located outside the peripheral edge of the semiconductor wafer is provided around the peripheral edge of the surface of the adhesive film layer. , Semi-conductor Type or the like to form an air flow space between the support comb adjacent by arranging a plurality of support comb which supports the peripheral portion of the wafer and the support comb the like (see Patent Documents 1 and 2).

JP 2012-33737 A JP 2012-59748 A

  However, in the case of the type (1), it is necessary to finally melt the temporary adhesive and solder and remove the semiconductor wafer from the ring, which is troublesome and the workability is very poor. .

  In the case of the type (2), an excellent effect can be expected, such as increasing the strength and rigidity of the semiconductor wafer, and allowing the semiconductor wafer to be easily detached, but it is large enough to cover the entire surface of the support substrate. Since the adhesive film layer is adhered and the entire opposing surface of the semiconductor wafer is firmly adhered to the strongly adhesive surface of the adhesive film layer without any gap, a thin and brittle semiconductor wafer may not be safely and easily peeled off from the adhesive film layer. At this time, it is conceivable that the semiconductor wafer is damaged due to an obstacle to the safe mounting and dismounting of the semiconductor wafer. In addition, since a large and wide adhesive film layer is used, it is possible to effectively protect the entire opposing surface of the semiconductor wafer, but it is expected that the manufacturing cost cannot be reduced.

  In the case of the type (3), although excellent effects can be expected, a plurality of holding protrusions are provided on the surface of the adhesive film layer, or a plurality of supports for supporting the peripheral edge of the semiconductor wafer on the peripheral wall. Since the comb teeth are arranged and an air circulation space is formed between the adjacent support comb teeth, there is a possibility that the configuration of the jig is complicated and the manufacturing is complicated.

  The present invention has been made in view of the above, and is an inexpensive semiconductor that is unlikely to cause troubles in the safe attachment and detachment of a semiconductor wafer, and can eliminate the risk of complicating the structure of a jig and complicating manufacturing. An object of the present invention is to provide a wafer support jig and a manufacturing method thereof.

In the present invention, in order to solve the above-mentioned problem, a support substrate facing a thin semiconductor wafer and a plurality of adhesive layers provided on the support substrate and detachably adhered to the semiconductor wafer are provided,
The support substrate is formed in the same shape as the semiconductor wafer, and a plurality of adhesives that directly adhere to the opposing surface of the semiconductor wafer and partition the space between the opposing surfaces on at least a part of both surfaces of the support substrate. A layer is provided, and the plurality of adhesive layers are arranged so that a space defined by the semiconductor wafer and the plurality of adhesive layers communicates with the outside of the support substrate.

In addition, the plurality of adhesive layers can be arranged discontinuously at a predetermined interval in the circumferential direction of the support substrate, and can be arranged from the center direction to the outer direction of the support substrate, and each adhesive layer can be formed into an arc-shaped filament. .
Moreover, a some adhesive layer can be arranged in a striped pattern, and each adhesive layer can be made into a linear filament.

Further, in the present invention, in order to solve the above-mentioned problem, a method for manufacturing a semiconductor wafer support jig according to claim 1, 2 or 3 using a mold,
A support substrate is formed in the same shape as a semiconductor wafer, and a plurality of thermosetting adhesive materials are patterned on at least a part of both surfaces of the support substrate, and the plurality of adhesive materials are patterned. A plurality of adhesive materials are formed in an adhesive layer by inserting a substrate into a mold, clamping the mold, and heating.

In addition, an adhesive material having a viscosity of 10 to 100 Pa · s is applied to at least a part of one side of the support substrate, and the adhesive material is spread and heated so that the adhesive material does not fill the cavity of the mold. It is preferable to form in the adhesion layer.
Also, after forming multiple adhesive materials on the adhesive layer, the semiconductor wafer support jig removed from the mold is placed in a vacuum baking oven, and the air is replaced with nitrogen gas and baked under specified conditions. Can do.

  Here, the semiconductor wafers in the claims include at least various semiconductor wafers (such as silicon wafers and compound semiconductor wafers) of φ100, 150, 200, 300, and 450 mm types. The support substrate can be formed in the same shape as the semiconductor wafer, or can be formed in a shape that is recognized as being approximately the same shape as the semiconductor wafer. This support substrate may be transparent, opaque, or translucent. Further, the plurality of adhesive layers may be directly adhered to the surface of the semiconductor wafer or directly adhered to the back surface. The plurality of adhesive layers are arranged in a concentric circle, a striped pattern, a dot shape, a C shape, or the like, for example.

  According to the present invention, a plurality of adhesive layers are partially formed on at least part of one side of the support substrate, not at least on the entire surface, and the adhesive range is reduced, so that a thin and brittle semiconductor wafer can be safely removed from the adhesive layer. And it can be easily and quickly peeled off. Moreover, since the pressure-sensitive adhesive layer is narrower and smaller than before, the manufacturing cost can be reduced. In addition, since it is not necessary to stand a plurality of holding protrusions on the adhesive layer or to arrange a plurality of supporting comb teeth for supporting a semiconductor wafer, the configuration of the support jig and the manufacturing method can be simplified.

  According to the present invention, it is possible to effectively eliminate the possibility of causing troubles in the safe attachment and detachment of a semiconductor wafer and incurring the complexity of the jig configuration and the complicated manufacturing. In addition, the space partitioned between the semiconductor wafer communicates with the outside of the support substrate, and this space can be an open space through which the gas flows, so that the gas can be exhausted from the partitioned space to the outside. There is little risk of enclosing air bubbles in the space. Therefore, for example, even if the semiconductor wafer support jig is used in a manufacturing process such as a vacuum process, the bubbles can be prevented from expanding, and as a result, the semiconductor wafer can be prevented from being damaged.

  According to invention of Claim 2, since gas distribute | circulates between the some adhesion layers arranged discontinuously with the predetermined space | interval, the space partitioned between the semiconductor wafer can be made into the open space where gas distribute | circulates. And there is little risk of enclosing air bubbles in the partitioned space.

  According to invention of Claim 3, since gas distribute | circulates the some adhesion layer arranged in the striped pattern, the space partitioned between the semiconductor wafer can be made into the open space of gas distribution, There is little fear. Further, if the semiconductor wafer is peeled off approximately parallel to the longitudinal direction of the plurality of adhesive layers arranged in a striped pattern, the semiconductor wafer can be prevented from being damaged.

  According to the fifth aspect of the invention, since the adhesive material having a viscosity of 10 to 100 Pa · s is applied, the adhesive material can be appropriately flowed in the cavity width direction of the mold when the support jig is manufactured. In addition, since the adhesive material is less likely to flow out into the gaps between the molds and burr is generated, contamination of the semiconductor wafer due to contact with the burr can be effectively prevented. Further, since one type of mold can cope with adhesive layers having various widths, the adhesive force of the adhesive layer can be easily finely adjusted. Furthermore, since the wide part which spreads in the width direction of a support substrate can be easily formed in the edge part of an adhesion layer, etc., if needed, the adhesion field to a semiconductor wafer is expanded, adhesiveness is improved, and a semiconductor wafer is improved. It is also possible to prevent the dropout.

It is a plane explanatory view showing typically an embodiment of a semiconductor wafer support jig concerning the present invention. It is side explanatory drawing which shows typically embodiment of the support jig for semiconductor wafers which concerns on this invention. It is principal part cross-section explanatory drawing which shows typically the relationship between the adhesive material and cavity of a metal mold | die in embodiment of the support jig for semiconductor wafers concerning this invention, and its manufacturing method. It is plane explanatory drawing which shows typically 2nd Embodiment of the support jig for semiconductor wafers which concerns on this invention. It is a plane explanatory view showing a 3rd embodiment of a support jig for semiconductor wafers concerning the present invention typically. It is a plane explanatory view showing typically a mold release processing plate in a 3rd embodiment of a support jig for semiconductor wafer concerning the present invention, and a manufacturing method for the same. It is sectional drawing of FIG. It is a plane explanatory view showing typically the positioning plate of the metallic mold in the third embodiment of the support jig for semiconductor wafer concerning the present invention and the manufacturing method for the same. It is sectional drawing of FIG.

  Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. A support jig for a semiconductor wafer in this embodiment is a support substrate that can face a thin semiconductor wafer 1 as shown in FIGS. 10 and a plurality of adhesive layers 11 for adhering and holding the semiconductor wafer 1, and the support substrate 10 is provided with a plurality of adhesive layers 11 that adhere to the semiconductor wafer 1 and partition the space 12. A plurality of adhesive layers 11 are arranged so as to communicate with the outside a space 12 defined by the adhesive layer 11.

  As shown in FIG. 2, the semiconductor wafer 1 is made of, for example, a silicon wafer having a diameter of 200 mm, a circuit pattern is formed on the front surface, and the back surface is back-ground in the back-grinding process, thereby reducing the thickness from 725 μm to 100 μm or less. For example, it is formed in a thickness of about 75 to 85 μm, preferably about 80 μm. The back-ground rough back surface of the semiconductor wafer 1 is processed into a smooth surface by a predetermined etching process, and then a metal thin film for electrodes is formed by sputtering or the like.

  At the peripheral edge of the semiconductor wafer 1, a linear orientation flat that facilitates crystal orientation discrimination and alignment is formed, or a substantially semicircular notch that facilitates alignment is cut out. In the present embodiment, an orientation flat is formed on the peripheral edge of the semiconductor wafer 1.

  As shown in FIGS. 1 and 2, the support substrate 10 is formed with a predetermined material in the same size and shape as the semiconductor wafer 1 with the orientation flat, and the surface thereof faces the surface of the semiconductor wafer 1. The material of the support substrate 10 is not particularly limited, and examples thereof include a glass reinforced epoxy resin, polyethylene terephthalate, and polycarbonate plate. Among these, when the semiconductor wafer support jig is used in the heating step, a plate made of glass-reinforced epoxy resin having excellent strength, thermal conductivity, heat resistance, electrical characteristics, and the like is preferably used.

  Since the support substrate 10 can be expected to have the same size as the semiconductor wafer 1 and sufficient strength, the support substrate 10 is formed to a thickness of about 0.4 mm. Further, when it is desired to improve the visibility, it is colored in a chromatic color, and when it is desired to observe and grasp the surface state of the semiconductor wafer 1, it is formed transparent.

  As shown in FIG. 1 and FIG. 2, the plurality of adhesive layers 11 are pattern pasted on a part of the surface of the support substrate 10, and detachably and directly adhere to the opposing surface of the semiconductor wafer 1, thereby allowing the semiconductor wafer It functions to divide a narrow space 12 between the surface of one of the two. The plurality of adhesive layers 11 are arranged at predetermined equal intervals in the circumferential direction near the surface peripheral edge of the support substrate 10 and are arranged from the center direction of the support substrate 10 to the radially outward direction. It is an elongate filament that is curved into an arc shape.

  The material of the adhesive layer 11 is not particularly limited, and examples thereof include silicone-based and fluorine-based adhesive materials 13 (see FIG. 3). Among these adhesive materials 13, in consideration of the case where a semiconductor wafer support jig is used in the heating process, the silicone-based thermosetting adhesive material 13 having excellent heat resistance, flame retardancy, detachability, and the like is used. Preferably used.

  The adhesive layer 11 adheres to a surface region that does not cause problems such as contamination even if it adheres to the surface of the semiconductor wafer 1. The thickness of the adhesive layer 11 is not particularly limited. However, when the thickness is too thin, the thickness variation of the support substrate 10 cannot be sufficiently absorbed. Since it is not possible to prevent adverse effects (for example, discoloration, etc.) associated with outgassing of the curable adhesive material 13, about 0.1 mm is preferable.

  The plurality of adhesive layers 11 are not continuously arranged in the circumferential direction of the support substrate 10 but are arranged at non-continuous equal intervals with a gap therebetween, and the adjacent adhesive layers 11 and 11 A space 12 defined between the space 14 and the surface of the semiconductor wafer 1 is communicated with the outside of the support substrate 10, and the space 12 is an open space through which air indicated by an arrow flows. Between a plurality of adjacent adhesive layers 11 and adhesive layers 11, at least a part thereof is located at a peeling start portion and a peeling end portion of the semiconductor wafer 1 from the viewpoint of facilitating peeling of the semiconductor wafer 1. Is preferred.

  In the above configuration, when a semiconductor wafer support jig is manufactured using the mold 20 shown in FIG. 3, first, a resin plate made of glass-reinforced epoxy resin is processed to support the same size and shape as the semiconductor wafer 1. A substrate 10 is formed, and a thermosetting paste-like adhesive material 13 for forming a plurality of adhesive layers 11 later is applied to a part of the surface of the support substrate 10.

  At this time, the pressure-sensitive adhesive material 13 is higher than the thickness of the pressure-sensitive adhesive layer 11 so as to prevent generation of burrs during manufacturing or to meet various specifications of the width of the pressure-sensitive adhesive layer 11. It is applied so as to be narrower than the width. For example, when the thickness of the adhesive layer 11 is 0.1 mm and the width of the adhesive layer 11 is 1.5 mm, the adhesive material 13 is applied to a height exceeding 0.1 mm so that the width is less than 1.5 mm. Adjusted.

  The viscosity of the adhesive material 13 under normal temperature and normal pressure is 10,000 to 100,000 [cpoise] so that the adhesive material 13 flows properly in the width direction of the cavity 23 of the mold 20, and 10 to 100 [Pa] in the SI unit system. -S] is preferable. In the case where a plurality of adhesive materials 13 are applied in a pattern, it is optimal to use a dispenser that can control the exact position and amount and improve productivity.

  Next, the support substrate 10 on which the plurality of adhesive materials 13 are applied and arranged is inserted into the mold release processing plate 21 and the positioning plate 22 of the mold 20 and clamped. A plurality of cavities 23 for the adhesive layer 11 are recessed in the mold release processing plate 21 of the mold 20. The cavities 23 prevent generation of burrs in the adhesive layer 11, and adhesives having various widths. The adhesive layer 11 is formed wider than the expected width so that it can correspond to the layer 11. For example, when the thickness of the adhesive layer 11 is 0.1 mm and the width of the adhesive layer 11 is 1.5 mm, the cavity 23 is formed to have a depth of 0.1 mm and a width of 5 mm.

  After the mold 20 is clamped, the mold 20 is heated for a predetermined time. At this time, the pressure-sensitive adhesive material 13 is spread and heated so as not to fill the cavity 23 of the release processing plate 21 (see FIG. 3), and a plurality of pressure-sensitive adhesive layers 11 are formed by this heating. Once the adhesive layer 11 is formed, the mold 20 is cooled, the mold 20 is opened, and the support substrate 10 is removed from the mold release processing plate 21, whereby a semiconductor wafer support jig can be manufactured. .

  After removing the semiconductor wafer support jig from the mold 20, the semiconductor wafer support jig was set in a dedicated jig and placed in a vacuum baking oven, and the air was replaced with nitrogen gas. Baking is preferably performed under predetermined conditions (for example, conditions of 160 ° C. and 3 hours). By doing so, it is possible to prevent various problems associated with outgassing of the thermosetting adhesive material 13.

  The manufactured semiconductor wafer support jig is directly adhered to the exposed surface of the semiconductor wafer 1 adhered to a predetermined adhesive tape, thereby being integrated with the thin and fragile semiconductor wafer 1 and having increased strength and rigidity. Then, it is used for a sputtering process, a solder reflow process, and the like.

  According to the above configuration, there is no need to remove the semiconductor wafer 1 by melting the temporary adhesive or solder after the processing of the semiconductor wafer 1, so that the semiconductor wafer 1 can be quickly detached and the workability is remarkably improved. Can be made. In addition, since the plurality of adhesive layers 11 are arranged on a part of the surface of the support substrate 10 instead of the entire surface to suppress the adhesion range to a necessary and sufficient range, the thin and fragile semiconductor wafer 1 can be safely removed from the adhesion layer 11. And it can peel easily. Therefore, the semiconductor wafer 1 can be safely attached and detached, and the situation where the semiconductor wafer 1 is damaged can be avoided in advance.

  Moreover, since the occupation area etc. of the adhesion layer 11 are narrow, manufacturing cost can be reduced significantly. In addition, since it is not necessary to install a plurality of holding projections on the surface of the adhesive layer 11 or to arrange a plurality of supporting comb teeth for supporting the semiconductor wafer 1, the structure of the support jig and the manufacturing method can be simplified. Can be achieved. Further, since the support substrate 10 is the same size and shape as the semiconductor wafer 1, the opposing surface of the semiconductor wafer 1 can be protected very effectively, and the surface of the semiconductor wafer 1 can be damaged by colliding with peripheral devices. It becomes possible to prevent.

  In addition, since the plurality of adhesive layers 11 are arranged at equal intervals in the circumferential direction of the support substrate 10, the semiconductor wafer 1 can be stably held in a relatively wide area. In addition, air can be reliably exhausted from the partitioned space 12 to the outside, and the possibility of enclosing bubbles in the space 12 is very low. For example, a semiconductor wafer support jig is introduced into a manufacturing process such as a vacuum process. However, it is possible to prevent the bubbles from expanding and damaging the semiconductor wafer 1.

  In addition, since the adhesive material 13 is not filled in the cavity 23 of the mold release processing plate 21 without a gap, the thickness of the adhesive layer 11 is less likely to vary. Further, since the adhesive material 13 flows out and solidifies from the gap between the molds 20 and no burrs are generated in the adhesive layer 11, contamination of the semiconductor wafer 1 due to contact with the burrs can be extremely effectively prevented. In addition, since the burr removal operation is unnecessary, significant smoothing, speeding up, and simplification of the manufacturing operation can be greatly expected. Furthermore, since one type of mold 20 can cope with the adhesive layers 11 having various widths, the adhesive force of the adhesive layer 11 can be easily finely adjusted.

  Next, FIG. 4 shows a second embodiment of the present invention. In this case, a plurality of adhesive layers 11 are arranged in a striped pattern on a part of the surface of the support substrate 10, and the adjacent adhesive layers 11 are arranged. A gap through which air can flow is formed between the adhesive layer 11 and the adhesive layer 11 so that each adhesive layer 11 is a straight line extending in the vertical direction of FIG.

  The plurality of adhesive layers 11 are arranged with a gap in the left-right direction of the support substrate 10, and each of the adjacent adhesive layers 11 and the adhesive layer 11 has an opening 14 between both ends thereof, so that the surface of the semiconductor wafer 1 is The space 12 partitioned in between is communicated with the outside of the support substrate 10, and the space 12 is an open space through which air flows. The other parts are the same as those in the above embodiment, and the description thereof is omitted.

  In this embodiment, it is obvious that the same effect as the above embodiment can be expected, and that the arrangement pattern of the plurality of adhesive layers 11 can be expected to be diversified. Moreover, if the semiconductor wafer 1 is peeled in parallel with the longitudinal direction of the adhesive layer 11, the semiconductor wafer 1 can be expected to be prevented from being damaged.

  Next, FIGS. 5 to 9 show a third embodiment of the present invention. In this case, a pair of left and right adhesive layers 11 are arranged side by side in the vicinity of the periphery of the surface of the support substrate 10, and this pair is attached. A gap through which air can flow is formed between both end portions of the adhesive layer 11, and each adhesive layer 11 is formed into an arc-shaped elongated filament along the peripheral edge of the support substrate 10. A wide portion 15 that extends inwardly of the support substrate 10 is formed at the end of the support substrate 10 in an enlarged manner, and this wide portion 15 improves the adhesive range and strength of the adhesive layer 11.

  In the above configuration, when the semiconductor wafer support jig is manufactured by the mold 20, first, a glass-reinforced epoxy resin resin plate is processed to form the support substrate 10 having the same size and shape as the semiconductor wafer 1. Then, a thermosetting paste-like adhesive material 13 for forming a pair of adhesive layers 11 later is applied in the vicinity of the peripheral edge of the surface of the support substrate 10.

  About this adhesive material 13, like the said embodiment, it is higher than the thickness of the adhesive layer 11 so that generation | occurrence | production of the burr | flash accompanying the outflow of the adhesive material 13 can be prevented, or it can respond to the specification of various adhesive layer 11 width | variety. It is applied so as to be narrower than the width of the layer 11. Also, the viscosity under normal temperature and normal pressure is preferably 10,000 to 100,000 [cpoise], and 10 to 100 [Pa · s] in the SI unit system, as in the above embodiment.

  When applying each adhesive material 13, the dispenser which can control an exact position and quantity and can improve productivity is used. The dispenser slides at a high speed while discharging a certain amount of the adhesive material. However, since the wide portion 15 is enlarged at the end of the adhesive layer 11, the dispenser is controlled late in the final stage of discharging the adhesive material 13.

  Next, the support substrate 10 on which the plurality of adhesive materials 13 are arranged is inserted into the mold release processing plate 21 and the positioning plate 22 of the mold 20 and clamped, and these are heated. As shown in FIGS. 6 to 9, the release processing plate 21 and the positioning plate 22 are each formed in a planar polygon, and an exposure port 24 that exposes most of the support substrate 10 except for the peripheral edge portion is formed at the center. Each is perforated.

  As shown in FIG. 6, a cavity 23 for the adhesive layer 11 is formed in the shape of a flat ring in the vicinity of the peripheral edge of the exposure port 24 of the release processing plate 21. The cavity 23 is formed wider than the assumed width of the pressure-sensitive adhesive layer 11 so as to prevent generation of burrs at the time of manufacture and to cope with the width of the pressure-sensitive adhesive layer 11 having various specifications.

  When the mold 20 is heated, the pressure-sensitive adhesive material 13 is spread and heated so as not to fill the cavity 23 of the mold release processing plate 21, and a plurality of pressure-sensitive adhesive layers 11 are formed by this heating. When the adhesive layer 11 is formed, after the mold 20 is cooled, the mold 20 is opened and the support substrate 10 is removed, whereby a semiconductor wafer support jig can be manufactured. The other parts are the same as those in the above embodiment, and the description thereof is omitted.

  In this embodiment, it is obvious that the same effects as those of the above embodiment can be expected, and that the arrangement pattern of the adhesive layer 11 can be expected to be diversified. Further, since no burrs are generated, it can be expected that the semiconductor wafer 1 is prevented from being contaminated, and furthermore, the adhesive layer 11 having various widths can be formed with one type of mold 20, so that the adhesive force of the adhesive layer 11 is improved. Fine adjustment can be easily performed.

  In addition, you may form suitably several notch which reads the protrusion for peeling of the semiconductor wafer 1, and the information of the peripheral part of the semiconductor wafer 1 in the peripheral part of the support substrate 10 of the said embodiment. In the above embodiment, the plurality of adhesive layers 11 are provided on a part of the front surface of the support substrate 10. However, the plurality of adhesive layers 11 may be provided on a part of the back surface of the support substrate 10. You may provide the some adhesion layer 11 in a part of front and back, respectively.

  In addition, a plurality of adhesive layers 11 may be arranged in a dot shape on a part of the front surface, a part of the back surface, and a part of the front and back surfaces of the support substrate 10. Moreover, when apply | coating the adhesive material 13, it can also apply | coat by the cheap screen printing method etc. which can anticipate precision control instead of apply | coating by dispenser. In this case, when the wide portion 15 is enlarged at the end of the adhesive layer 11, the supply amount of the adhesive material 13 may be increased at the final stage of screen printing the adhesive material 13.

  The semiconductor wafer support jig and the manufacturing method thereof according to the present invention are used in the field of manufacturing semiconductor devices.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 10 Support substrate 11 Adhesive layer 12 Space 13 Adhesive material 14 Between an adhesive layer and an adhesive layer 15 Wide part 20 Mold 21 Mold release processing plate 22 Positioning plate 23 Cavity

Claims (5)

A support jig for a semiconductor wafer, comprising a support substrate facing a thin semiconductor wafer and a plurality of adhesive layers provided on the support substrate and detachably adhered to the semiconductor wafer,
The support substrate is formed in the same shape as the semiconductor wafer, and a plurality of adhesives that directly adhere to the opposing surface of the semiconductor wafer and partition the space between the opposing surfaces on at least a part of both surfaces of the support substrate. A support jig for a semiconductor wafer, wherein a plurality of adhesive layers are arranged so that a space defined by the semiconductor wafer and the plurality of adhesive layers communicates with the outside of the support substrate.   The plurality of adhesive layers are arranged discontinuously at a predetermined interval in the circumferential direction of the support substrate, and are arranged from the center direction to the outer direction of the support substrate, and each adhesive layer is formed into an arc-shaped line. Support jig for semiconductor wafer.   The semiconductor wafer support jig according to claim 1, wherein a plurality of adhesive layers are arranged in a striped pattern, and each adhesive layer is formed as a linear line. A manufacturing method for manufacturing a semiconductor wafer support jig according to claim 1, 2 or 3, using a mold,
A support substrate is formed in the same shape as a semiconductor wafer, and a plurality of thermosetting adhesive materials are patterned on at least a part of both surfaces of the support substrate, and the plurality of adhesive materials are patterned. A method for manufacturing a support jig for a semiconductor wafer, wherein a plurality of adhesive materials are formed in an adhesive layer by inserting a substrate into a mold, clamping the mold, and heating.   An adhesive material having a viscosity of 10 to 100 Pa · s is applied to at least a part of one side of the support substrate, and the adhesive material is spread and heated so as not to fill the cavity of the mold. The manufacturing method of the support jig for semiconductor wafers of Claim 4 formed in this.

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