JP2016015356A - Light emission device and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emission device having a CSP structure that the width of the light emission device is kept to the same level as the width of a light emission element, the light emission device enabling a protection element provided on a light emission element to be embedded in a resin layer.SOLUTION: A light emission device has a light emission element having a p-side electrode and an n-side electrode at the mount surface side of a semiconductor layer, a resin layer covering the p-side and n-side electrodes of the light emission element, a protection element which is provided on the light emission element in the resin layer and electrically connected to the p-side and n-side electrodes of the light emission element, a p-side conductive member which is provided in the resin layer, connected to the p-side electrode of the light emission element and exposed at a surface of the resin layer which is at the opposite side to the light emission element, and an n-side conductive member which is provided in the resin layer, connected to the n-side electrode of the light emission element and exposed at a surface of the resin layer which is located at the opposite side to the light emission element. Each of the p-side conductive element and the n-side conductive element has a wire.

Description

  The present invention relates to a light emitting device and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, in a light emitting device having a CSP (Chip Size Package or Chip Scale Package) structure in which the size of the light emitting device is reduced to a level close to that of a light emitting element, a semiconductor layer is formed on the substrate in order to realize further miniaturization. After the formation, an invention has been proposed in which the substrate is removed by a laser lift-off method or etching to form a light emitting element, and the mounting surface side of the semiconductor layer is covered with a resin layer (see Patent Document 1).

JP 2013-247247 A

  A light-emitting device having a CSP structure in which the width of the light-emitting device is maintained to be approximately the same as the width of the light-emitting element, and a light-emitting device capable of burying a protective element provided on the light-emitting element in a resin layer. Objective.

  The above problem is solved by the following means.

  A light-emitting element having a p-side electrode and an n-side electrode on the mounting surface side of the semiconductor layer; a resin layer covering the p-side electrode and the n-side electrode of the light-emitting element; and provided on the light-emitting element in the resin layer A protective element electrically connected to the p-side electrode and the n-side electrode of the light-emitting element, and the light-emitting element provided in the resin layer and connected to the p-side electrode of the light-emitting element and in the resin layer P-side conductive member exposed on the surface opposite to the surface of the resin layer, and provided in the resin layer, connected to the n-side electrode of the light-emitting element and on the surface of the resin layer opposite to the light-emitting element An exposed n-side conductive member, wherein each of the p-side conductive member and the n-side conductive member includes a wire.

  A step of preparing a light emitting element having a p-side electrode and an n-side electrode on the mounting surface side of the semiconductor layer, and a protective element having a p-side electrode and an n-side electrode on the same surface side; and the p-side electrode of the light-emitting element And the p-side electrode of the protection element are electrically connected, and the protection is provided on the light-emitting element so that the n-side electrode of the light-emitting element and the n-side electrode of the protection element are electrically connected. Mounting the element, connecting one end of the wire to the p-side electrode of the light-emitting element and connecting the other end of the wire to the n-side electrode of the light-emitting element, and mounting the resin on the mounting surface side of the semiconductor layer Forming a layer and burying the protective element and the wire in the resin layer; and removing a part of the resin layer and burying a part of the wire embedded in the resin layer in the resin layer And a step of exposing on a surface opposite to the element. Method of manufacturing a light emitting device according to claim.

  A step of preparing a light-emitting element having a p-side electrode and an n-side electrode on the mounting surface side of the semiconductor layer, and a protective element having a p-side electrode and an n-side electrode on the same surface side; A step of placing the protective element on the light emitting element so as to have a p-side electrode and an n-side electrode, connecting one end of the first wire to the p-side electrode of the light-emitting element, and The other end is connected to the p-side electrode of the protection element, one end of the second wire is connected to the n-side electrode of the light emitting element, and the other end of the second wire is connected to the n-side electrode of the protection element Forming a resin layer on the mounting surface side of the semiconductor layer, burying the protective element, the first wire, and the second wire in the resin layer, and a part of the resin layer. Of the first and second wires removed and buried in the resin layer Method of manufacturing a light emitting device characterized by the light emitting element in the resin layer part and a step of exposing the surface of the opposite side.

  According to the light emitting device and the manufacturing method thereof, in the light emitting device having a CSP structure in which the width of the light emitting device is maintained to be approximately the same as the width of the light emitting element, the protective element provided on the light emitting element is disposed in the resin layer. A light-emitting device that can be buried can be provided.

1 is a schematic plan view showing a configuration of a light emitting device according to Embodiment 1. FIG. It is a schematic diagram which shows the AA line cross section in FIG. 1A. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1. FIG. 6 is a schematic plan view showing a configuration of a light emitting device according to Embodiment 2. FIG. It is a schematic diagram which shows the AA cross section in FIG. 3A. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2. 6 is a schematic plan view of a light emitting device according to Embodiment 3. FIG. It is a schematic diagram which shows the AA line cross section in FIG. 5A. 6 is a schematic plan view of a light emitting device according to Embodiment 4. FIG. It is a schematic diagram which shows the AA line cross section in FIG. 6A. It is the figure which expanded the cross section of the light emitting element typically shown in FIG. 1B, FIG. 3B, FIG. 5B, and FIG. 6B.

[Light Emitting Device 1 According to Embodiment 1]
FIG. 1A is a schematic plan view of the light emitting device according to Embodiment 1, and FIG. 1B is a schematic view showing a cross section taken along line AA in FIG. 1A. As shown in FIGS. 1A and 1B, the light emitting device 1 according to Embodiment 1 includes a light emitting element 10 including a p-side electrode 12 and an n-side electrode 13 on the mounting surface side of the semiconductor layer 11, and p of the light emitting element 10. A resin layer 20 covering the side electrode 12 and the n-side electrode 13, and a protection element provided on the light-emitting element 10 in the resin layer 20 and electrically connected to the p-side electrode 12 and the n-side electrode 13 of the light-emitting element 10 40, a p-side conductive member 31 provided in the resin layer 20, connected to the p-side electrode 12 of the light-emitting element 10 and exposed on the surface of the resin layer 20 opposite to the light-emitting element 10, and a resin layer And an n-side conductive member 32 that is connected to the n-side electrode 13 of the light-emitting element 10 and is exposed on the surface of the resin layer 20 opposite to the light-emitting element 10. Member 31 and n-side conductive member 2 is a light-emitting device having a wire W, respectively. Hereinafter, it demonstrates in order.

(Light emitting element 10)
The light emitting element 10 is, for example, a light emitting diode chip. The light emitting element 10 includes a p-side electrode 12 and an n-side electrode 13 on the mounting surface side of the semiconductor layer 11. The mounting surface of the semiconductor layer 11 is the surface opposite to the surface on which the growth substrate 80 exists (or the surface on which the growth substrate 80 exists). The surface on which the growth substrate 80 is present (or the surface on which it is present) is the light emitting surface of the semiconductor layer 11, and light generated by the semiconductor layer 11 is emitted from the light emitting surface. In this embodiment, after the semiconductor layer 11 is stacked on the growth substrate 80, the growth substrate 80 is completely removed, and the phosphor is formed on the light emitting surface of the semiconductor layer 11 from which the growth substrate 80 is completely removed. A layer 60 is provided.

The semiconductor layer 11 is laminated on the growth substrate 80 by using a method such as MOCVD method (metal organic vapor phase epitaxy), HVPE method (hydride vapor phase epitaxy), MBE method (molecular beam epitaxy). The As the growth substrate 80, for example, an insulating substrate such as sapphire or spinel (MgAl ₂ O ₄ ), and lattice bonding with silicon carbide (SiC), ZnS, ZnO, Si, GaAs, diamond, and a nitride semiconductor. An oxide substrate such as lithium niobate or neodymium gallate can be used. The growth substrate 80 may be completely removed after the semiconductor layer 11 is manufactured, a part thereof may be removed, or it may not be removed at all. The growth substrate 80 can be removed by, for example, a laser lift-off method, polishing, etching, or the like.

  As the phosphor layer 60, a resin material containing a wavelength conversion material (eg, phosphor) can be used.

  As the resin material, a material having translucency with respect to light emitted from the semiconductor layer 11 or the wavelength conversion material can be used. Examples of such a material include a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenol resin, an acrylate resin, a urethane resin, a fluororesin, or a resin containing at least one of these resins, or A hybrid resin or the like can be suitably used.

As the wavelength conversion material, a material that emits light having a wavelength different from that of the excitation light using the light emitted from the semiconductor layer 11 as excitation light can be used. In particular, a granular phosphor can be preferably used. For example, Ce (cerium) activated YAG (yttrium aluminum garnet) phosphor, Ce activated LAG (lutetium aluminum garnet) phosphor, Eu (europium) and / or Cr (chromium) Activated nitrogen-containing calcium aluminosilicate (CaO—Al ₂ O ₃ —SiO ₂ ) -based phosphor, Eu-activated silicate ((Sr, Ba) ₂ SiO ₄ ) -based phosphor, β sialon phosphor, KSF A (K ₂ SiF ₆ : Mn) -based phosphor is an example of a wavelength conversion material. A quantum dot phosphor is also an example of a wavelength conversion material.

  The film thickness of the phosphor layer 60 can be determined according to the content of the wavelength conversion material, the desired color tone, etc., for example, can be 1 to 500 μm, more preferably 5 to 200 μm, More preferably, it is 10-100 micrometers.

  The phosphor layer 60 may be provided on the light emitting surface of the semiconductor layer 11 or may not be provided. When the phosphor layer 60 is not provided on the light emitting surface of the semiconductor layer 11, light is extracted from the light emitting surface of the semiconductor layer 11 itself.

  The p-side electrode 12 and the n-side electrode 13 of the light emitting element 10 are, for example, pad electrodes that are electrically connected to the p-type semiconductor layer 113 and the n-type semiconductor layer 111 included in the semiconductor layer 11. A metal material can be used for the p-side electrode 12 and the n-side electrode 13, for example, a single metal such as Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, W, or the like. An alloy containing these metals as a main component can be preferably used. In addition, when using an alloy, you may contain nonmetallic elements, such as Si, as a composition element like an AlSiCu alloy (ASC), for example. In addition, as the p-side electrode 12 and the n-side electrode 13, a single layer or a laminate of these metal materials can be used.

(Resin layer 20)
The resin layer 20 covers the p-side electrode 12 and the n-side electrode 13 of the light emitting element 10. For example, the resin layer 20 is provided on the mounting surface of the semiconductor layer 11. Examples of the resin layer 20 include a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenol resin, an acrylate resin, a urethane resin, a fluororesin, or a resin containing at least one of these resins, or a hybrid Resins can be used. The resin layer 20 may contain a heat conductive member such as granular carbon black, AlN (aluminum nitride), or SiC (silicon carbide). In this way, since the thermal conductivity is increased, the heat generated in the light emitting element 10 can be quickly conducted and radiated to the outside. In addition, when using a translucent resin material as the resin layer 20, it is preferable to make the resin layer 20 contain a light-reflective filler. In this way, light can be efficiently extracted from the light emitting surface of the semiconductor layer 11. The thickness of the resin layer 20 is preferably about 30 μm to 500 μm, more preferably about 100 μm to 300 μm from the viewpoint of mechanical strength. The resin layer 20 can be provided by, for example, compression molding using a mold, transfer molding, spin coating, or the like.

(P-side conductive member 31, n-side conductive member 32)
The p-side conductive member 31 and the n-side conductive member 32 are provided in the resin layer 20 and exposed on the surface of the resin layer 20 opposite to the light emitting element 10. The p-side conductive member 31 and the n-side conductive member 32 are connected to the p-side electrode 12 and the n-side electrode 13 of the light emitting element 10, respectively. As the p-side conductive member 31 and the n-side conductive member 32, a wire W can be used. Thereby, the mass productivity of the light emitting device is improved.

  As the wire W, it is preferable to use a metal material having good electrical conductivity and thermal conductivity. For example, Au, Cu, Al, Ag, or an alloy containing these metals as a main component is preferably used. it can. The surface of the wire W may be coated. In order to efficiently conduct the heat generated in the light emitting element 10, the diameter of the wire W is preferably as thick as possible. Specifically, it is preferably about 20 μm or more, and more preferably about 30 μm or more. The upper limit of the diameter of the wire W is not particularly limited as long as it is a size that can be wired to the n-side electrode 13 and the p-side electrode 12 of the light emitting element 10, but the semiconductor layer is affected by an impact when wire bonding is performed. 11 is not damaged, for example, about 3 mm or less, more preferably about 1 mm or less. In addition, if the material which consists of Cu, Al, or an alloy which has these as a main component is used as the wire W, the thicker wire W can be utilized cheaply. The shape of the wire W is not particularly limited. In addition to the wire W having a circular cross-sectional shape, a ribbon-shaped wire W having a cross-sectional shape such as an ellipse or a rectangle may be used.

(Protective element 40)
The protective element 40 is provided on the light emitting element 10 in the resin layer 20 and is electrically connected to the p-side electrode 12 and the n-side electrode 13 of the light emitting element 10. More specifically, the protection element 40 has a p-side electrode 41 and an n-side electrode 42 on the side facing the light emitting element 10, and the p-side electrode 41 and the n-side electrode 42 of the protection element 40 are joined members. 70 (example: solder bump, copper bump, gold bump, silver paste) is used to electrically connect to the p-side electrode 12 and the n-side electrode 13 of the light emitting element 10.

  As the protective element 40, for example, an element capable of short-circuiting a reverse voltage applied to the light-emitting element 10 or short-circuiting a forward voltage equal to or higher than a predetermined voltage higher than the operating voltage of the light-emitting element 10, That is, overheating, overvoltage, overcurrent, a protection circuit, an electrostatic protection element, etc. are mentioned. Specifically, a Zener diode, a transistor diode, a capacitor, or the like can be used.

(P-side external electrode 51, n-side external electrode 52)
A p-side external electrode 51 and an n-side external electrode 52 respectively connected to the p-side conductive member 31 and the n-side conductive member 32 are provided on the surface of the resin layer 20 opposite to the light emitting element 10. Also good. According to the p-side external electrode 51 and the n-side external electrode 52, it becomes easy to mount the light emitting device 1 on the external substrate. The p-side external electrode 51 and the n-side external electrode 52 have at least the uppermost layer formed of Au in order to improve the bondability with a mounting substrate using an Au alloy-based bonding material such as Au—Sn eutectic solder. It is preferable. For example, it is preferable to form a thin film of Ti and Ni sequentially by sputtering, and then stack an Au layer on top of the Ni layer. The p-side external electrode 51 and the n-side external electrode 52 preferably have a total film thickness of about 0.1 to 5 μm, and more preferably about 0.5 to 4 μm. When the wire W is formed of Au, the upper surface of the wire W may be used as a connection surface with the outside without providing the p-side external electrode 51 and the n-side external electrode 52.

  As described above, according to the light emitting device 1 according to the first embodiment, in the light emitting device having the CSP structure in which the width of the light emitting device 1 is maintained at the same level as the width of the light emitting element 10, the light emitting device 1 is provided on the light emitting element 10. It is possible to provide a light emitting device capable of burying the formed protective element 40 in the resin layer 40.

  Further, according to the light emitting device 1 according to the first embodiment, the p-side conductive member 31 and the n-side conductive member 32 are configured to have the wires W that can be formed more easily than plating. The mass productivity of a light-emitting device having a relatively thick resin layer 20 in which the protective element 40 is provided in the resin layer 20 can be effectively improved. In the first embodiment, among the light-emitting devices in which the protective element 40 is provided in the resin layer 20, the light-emitting device in which the growth substrate 80 is completely removed or the thickness thereof is reduced in order to realize downsizing. It can be particularly preferably applied to. In such a light emitting device that has been reduced in size, the resin layer 20 is often provided thicker in order to maintain the mechanical strength of the light emitting device than in a light emitting device that has not been reduced in size. It is.

[Method for Manufacturing Light-Emitting Device 1 According to Embodiment 1]
2A to 2H are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to Embodiment 1.

(First step)
First, the light emitting element 10 having the p-side electrode 12 and the n-side electrode 13 on the mounting surface side of the semiconductor layer 11 and the protection element 40 having the p-side electrode 41 and the n-side electrode 42 on the same surface side are prepared. Specifically, the semiconductor layer 11 of the light-emitting element 10 is grown for growth by a method such as MOCVD (metal organic vapor phase epitaxy), HVPE (hydride vapor phase epitaxy), MBE (molecular beam epitaxy). The semiconductor layer 11 is laminated on the substrate 80, and the p-side electrode 12 and the n-side electrode 13 are formed on the upper surface (mounting surface) side of the laminated semiconductor layer 11. The p-side electrode 12 and the n-side electrode 13 are formed by sputtering, for example.

(Second step)
Next, as shown in FIG. 2A, the p-side electrode 12 of the light-emitting element 10 and the p-side electrode 41 of the protective element 40 are electrically connected, and the n-side electrode 13 of the light-emitting element 10 and the n-side of the protective element 40 The protective element 40 is mounted on the light emitting element 10 so that the side electrode 42 is electrically connected. Specifically, for example, the p-side electrode 41 of the protection element 40 is electrically connected to the p-side electrode 12 of the light emitting element 10 using a bonding member 70 such as solder, and the n-side electrode 42 of the protection element 40 is connected. It is electrically connected to the n-side electrode 13 of the light emitting element 10.

(Third step)
Next, as shown in FIG. 2B, one end of the wire W is connected to the p-side electrode 12 of the light emitting element 10 and the other end of the wire W is connected to the n-side electrode 13 of the light emitting element 10 by a wire bonding apparatus. .

(4th process)
Next, as illustrated in FIG. 2C, the resin layer 20 is formed on the mounting surface side of the semiconductor layer 11 by compression molding using a mold, and the protection element 40 and the wire W are embedded in the resin layer 20.

(5th process)
Next, as shown in FIG. 2D, after the resin layer 20 is cured, a part of the resin layer 20 is removed by using a cutting device, and a part of the wire W embedded in the resin layer 20 is replaced with the resin layer. 20 is exposed on the surface opposite to the light emitting element 10. As a result, the wire W is separated into two wires W. Further, a part of the wire W is exposed so as to be flush with the upper surface of the resin layer 20.

(6th process)
Next, as shown in FIG. 2E, a metal film is formed as the n-side external electrode 52 and the p-side external electrode 51 on the upper surface of the wire W and the upper surface of the resin layer 20 in the vicinity thereof. The metal film can be formed, for example, by patterning a metal film formed by a sputtering method. For patterning the metal film, a pattern formation method by etching, a pattern formation method by lift-off, or the like can be used.

(Seventh step)
Next, as shown in FIG. 2F, the growth substrate 80 is removed by, for example, LLO (laser lift-off method) or chemical lift-off method. At this time, since the semiconductor layer 11 is reinforced by the resin layer 20, it is not damaged such as cracks or cracks. An uneven shape may be formed on the exposed lower surface (light emitting surface) of the semiconductor layer 11 by roughening by polishing or wet etching. The removed growth substrate 80 can be reused as the growth substrate 80 of the separate semiconductor layer 11 by polishing the surface.

(8th step)
Next, as shown in FIG. 2G, the phosphor layer 60 is formed on the lower surface (light emitting surface) side of the semiconductor layer 11. The phosphor layer 60 can be formed, for example, by spraying a slurry containing a resin material and a phosphor in a solvent.

(9th step)
Next, as shown in FIG. 2H, the collective substrate is divided into pieces by dicing to form a plurality of light emitting devices 1.

  According to the manufacturing method example described above, the light-emitting device 1 according to Embodiment 1 can be easily manufactured. Moreover, the mass productivity of the light emitting device 1 according to Embodiment 1 can be improved.

[Light Emitting Device 2 According to Embodiment 2]
3A is a schematic plan view of the light-emitting device according to Embodiment 2, and FIG. 3B is a schematic diagram showing a cross section taken along line AA in FIG. 3A.

  As illustrated in FIGS. 3A and 3B, in the light emitting device 2 according to the second embodiment, the protection element 40 includes the p-side electrode 41 and the n-side electrode 42 on the side opposite to the light emitting element 10, and the p of the protection element 40. The side electrode 41 and the n-side electrode 42 are different from the light emitting device 1 according to the first embodiment in that the side electrode 41 and the n-side electrode 42 are electrically connected to the p-side external electrode 51 and the n-side external electrode 52 through the wires W, respectively. Also in the second embodiment, similarly to the first embodiment, in the light emitting device having the CSP structure in which the width of the light emitting device 2 is maintained at the same level as the width of the light emitting element 10, the protective element 40 provided on the light emitting element 10. It is possible to provide a light emitting device that can be embedded in the resin layer 40. Further, the mass productivity of the light emitting device 2 can be improved.

  In the second embodiment, a resin material can be used as the bonding member 70 for placing the protection element 40 on the light emitting element 10. Specifically, an epoxy resin, a silicone resin, a polyimide resin, an acrylic resin, an unsaturated polyester resin, or the like is preferably used. These may be used alone or in combination of two or more.

[Method for Manufacturing Light-Emitting Device 2 According to Embodiment 2]
4A to 4H are schematic cross-sectional views illustrating an example of a method for manufacturing a light emitting device according to Embodiment 2.

(First step)
Since the first step is the same as the first step of the first embodiment, description thereof is omitted.

(Second step)
Next, as shown in FIG. 4A, the protection element 40 is placed on the light emitting element 10. Specifically, the protection element 40 has a p-side electrode 41 and an n-side electrode 42 on the same surface side, and the p-side electrode 41 and the n-side electrode 42 are located on the opposite side to the light emitting element 10. Then, it is placed on the light emitting element 10 via a bonding member 70 such as a resin material.

(Third step)
Next, as shown in FIG. 4B, one end of the first wire W1 is connected to the p-side electrode 12 of the light emitting element 10 and the other end of the first wire W1 is connected to the p-side electrode of the protection element 40 by a wire bonding apparatus. 41, one end of the second wire W2 is connected to the n-side electrode 13 of the light emitting element 10, and the other end of the second wire W2 is connected to the n-side electrode 42 of the protection element 40.

(4th process)
Next, as shown in FIG. 4C, the resin layer 20 is formed on the mounting surface side of the semiconductor layer 11 by compression molding using a mold, and the protective element 40, the first wire W1, and the second wire W2 are connected to the resin layer 20. Buried inside.

(5th process)
Next, as shown in FIG. 4D, after the resin layer 20 is cured, a part of the resin layer 20 is removed using a cutting device, and the first wire W <b> 1 and the second wire embedded in the resin layer 20. A part of W2 is exposed on the surface of the resin layer 20 opposite to the light emitting element 10. Thereby, the first wire W1 and the second wire W2 are each separated into two wires W (four in total). Moreover, a part of 1st wire W1 and 2nd wire W2 are exposed so that it may become the same surface as the upper surface of the resin layer 20. FIG.

(6th process)
Next, as shown in FIG. 4E, metal films as the n-side external electrode 52 and the p-side external electrode 51 are formed on the top surfaces of the first wire W1 and the second wire W2 and the top surface of the resin layer 20 in the vicinity thereof. . The metal film can be formed, for example, by patterning a metal film formed by a sputtering method. For patterning the metal film, a pattern formation method by etching, a pattern formation method by lift-off, or the like can be used.

(7th to 9th steps)
Since the seventh step to the ninth step (see FIGS. 4F to 4H) are the same as the seventh step to the ninth step of the first embodiment, description thereof will be omitted.

  According to the manufacturing method example described above, the light-emitting device 2 according to Embodiment 2 can be easily manufactured. Further, the mass productivity of the light emitting device 2 can be improved.

[Light Emitting Device According to Embodiment 3]
FIG. 5A is a schematic plan view of the light emitting device according to Embodiment 3, and FIG. 5B is a schematic view showing a cross section taken along line AA in FIG. 5A. As shown in FIGS. 5A and 5B, in the light emitting device 3 according to Embodiment 3, the p-side conductive member 31 and the n-side conductive member 32 are deteriorated in mass productivity of the light-emitting device in order to improve heat dissipation. This is different from the first embodiment in that the plating layers 31 (P) and 32 (P) are included in a part of the thickness so as not to be used. In this way, the p-side conductive member 31 and the n-side conductive member 32 are plated in addition to the wires 31 (W) and 32 (W) as long as the mass productivity of the light emitting device does not deteriorate. The layers 31 (P) and 32 (P) may be included in a part thereof.

[Light Emitting Device According to Embodiment 4]
6A is a schematic plan view of the light-emitting device according to Embodiment 4, and FIG. 6B is a schematic diagram showing a cross section taken along line AA in FIG. 6A. As illustrated in FIGS. 6A and 6B, in the light emitting device 4 according to the fourth embodiment, the protection element 40 has an n-side electrode 42 and a p-side electrode 41 on the side facing the light emitting element 10 and the side opposite to the light emitting element 10. And the n-side electrode 42 of the protective element 40 on the side facing the light-emitting element 10 is electrically connected to the n-side electrode 13 of the light-emitting element 10 by the connecting member 70, and is opposite to the light-emitting element 10. This is different from the first embodiment in that the p-side electrode 41 of the protective element 40 is electrically connected to the p-side electrode 12 of the light emitting element 10 by the wire W. When one of the p-side electrode 41 and the n-side electrode 42 of the protection element 40 is provided on the side opposite to the light emitting element 10 and the other is provided on the side facing the light emitting element 10, the resin layer 20 However, even in such a case, according to the fourth embodiment, the mass productivity of the light emitting device can be improved.

[Light emitting element 10]
FIG. 7 is an enlarged view of a cross section of the light-emitting element 10 schematically shown in FIGS. 1B, 3B, 5B, and 6B. As shown in FIG. 7, the light emitting element 10 includes a semiconductor layer 11, a p-side electrode 12, an n-side electrode 13, and an insulating film 14. The semiconductor layer 11 is, for _{example, In X Al Y Ga 1-} X-Y N (0 ≦ X, 0 ≦ Y, X + Y <1) is a semiconductor like. More specifically, the semiconductor layer 11 includes, for example, an n-type semiconductor layer 111, an active layer 112, a p-type semiconductor layer 113, and the like. The n-type semiconductor layer 111, the active layer 112, and the p-type semiconductor layer 113 may each have a single-layer structure, but may have a stacked structure including layers having different compositions, film thicknesses, or the like, a superlattice structure, or the like. In particular, the active layer 112 preferably has a single quantum well or multiple quantum well structure in which thin films that generate quantum effects are stacked. If the light emitting element 10 shown in FIG. 7 is used, the height of the n-side electrode 13 and the height of the p-side electrode 12 on the mounting surface side of the semiconductor layer 11 are formed at the same height (including almost the same height). Therefore, the protective element 40 can be easily placed on the light emitting element 10, which is preferable.

  The embodiments have been described above. However, these descriptions relate to examples, and the configurations described in the claims are not limited by these descriptions.

DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Light-emitting device 3 Light-emitting device 4 Light-emitting device 10 Light-emitting element 11 Semiconductor layer 111 n-type semiconductor layer 112 Active layer 113 p-type semiconductor layer 12 p-side electrode 13 of light-emitting element n-side electrode 14 of light-emitting element Insulating film 20 Resin Layer 31 P-side conductive member 31 (W) P-side conductive member (wire)
31 (P) p-side conductive member (plating layer)
32 n-side conductive member 32 (W) n-side conductive member (wire)
32 (P) n-side conductive member (plating layer)
40 protection element 41 p-side electrode 42 of protection element n-side electrode 51 of protection element p-side external electrode 52 n-side external electrode 60 phosphor layer 70 bonding member 80 growth substrate W wire W1 first wire W2 second wire

Claims (6)

A light emitting device including a p-side electrode and an n-side electrode on the mounting surface side of the semiconductor layer;
A resin layer covering the p-side electrode and the n-side electrode of the light emitting element;
A protective element provided on the light-emitting element in the resin layer and electrically connected to the p-side electrode and the n-side electrode of the light-emitting element;
A p-side conductive member provided in the resin layer, connected to the p-side electrode of the light-emitting element and exposed on the surface of the resin layer opposite to the light-emitting element;
An n-side conductive member provided in the resin layer, connected to the n-side electrode of the light-emitting element and exposed on the surface of the resin layer opposite to the light-emitting element,
The p-side conductive member and the n-side conductive member each have a wire. The protective element has a p-side electrode and an n-side electrode on the side facing the light emitting element,
The light-emitting device according to claim 1, wherein the p-side electrode and the n-side electrode of the protection element are electrically connected to the p-side electrode and the n-side electrode of the light-emitting element, respectively. The protective element has one of a p-side electrode and an n-side electrode on the side facing the light-emitting element, and has one of a p-side electrode and an n-side electrode on the side opposite to the light-emitting element. ,
The light-emitting device according to claim 1, wherein the p-side electrode and the n-side electrode of the protection element are electrically connected to the p-side electrode and the n-side electrode of the light-emitting element, respectively. A p-side external electrode and an n-side external electrode respectively connected to the p-side conductive member and the n-side conductive member on a surface of the resin layer opposite to the light emitting element;
The protective element has a p-side electrode and an n-side electrode on the side opposite to the light emitting element,
2. The light emitting device according to claim 1, wherein the p-side electrode and the n-side electrode of the protection element are electrically connected to the p-side external electrode and the n-side external electrode through wires, respectively. Preparing a light emitting element having a p-side electrode and an n-side electrode on the mounting surface side of the semiconductor layer, and a protection element having a p-side electrode and an n-side electrode on the same surface side;
The p-side electrode of the light-emitting element and the p-side electrode of the protection element are electrically connected, and the n-side electrode of the light-emitting element and the n-side electrode of the protection element are electrically connected. Mounting the protective element on the light emitting element;
Connecting one end of the wire to the p-side electrode of the light-emitting element and connecting the other end of the wire to the n-side electrode of the light-emitting element;
Forming a resin layer on the mounting surface side of the semiconductor layer, and burying the protective element and the wire in the resin layer;
Removing a part of the resin layer and exposing a part of the wire embedded in the resin layer on a surface of the resin layer opposite to the light emitting element;
A method for manufacturing a light-emitting device, comprising: Preparing a light emitting element having a p-side electrode and an n-side electrode on the mounting surface side of the semiconductor layer, and a protection element having a p-side electrode and an n-side electrode on the same surface side;
Placing the protective element on the light emitting element so as to have a p-side electrode and an n-side electrode on the opposite side of the light emitting element;
One end of the first wire is connected to the p-side electrode of the light-emitting element, the other end of the first wire is connected to the p-side electrode of the protection element, and one end of the second wire is connected to the n-side of the light-emitting element Connecting to the electrode and connecting the other end of the second wire to the n-side electrode of the protection element;
Forming a resin layer on the mounting surface side of the semiconductor layer, and burying the protective element, the first wire, and the second wire in the resin layer;
Removing a part of the resin layer and exposing a part of the first wire and the second wire embedded in the resin layer on a surface opposite to the light emitting element in the resin layer;
A method for manufacturing a light-emitting device, comprising:

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