JP2015144268A5 - - Google Patents

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JP2015144268A5
JP2015144268A5 JP2014262248A JP2014262248A JP2015144268A5 JP 2015144268 A5 JP2015144268 A5 JP 2015144268A5 JP 2014262248 A JP2014262248 A JP 2014262248A JP 2014262248 A JP2014262248 A JP 2014262248A JP 2015144268 A5 JP2015144268 A5 JP 2015144268A5
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図７Ａ及び図７Ｂは、連続波プラズマによって堆積された膜（図７Ａ）及びパルスプラズマによって堆積された膜（図７Ｂ）の、ＳＴＥＭ−ＥＥＬ解析によって測定された炭素及びシリコンについての相対的な面密度地図を示している。これらの図は、堆積された膜の様々な部分におけるＣ：Ｓｉ比を示すことを目的として色で示されている。２枚の膜の側壁を比較すると、パルスプラズマによる膜は、連続波プラズマによって用意された膜よりも高いＣ：Ｓｉ比を有することが明らかである。この高い側壁Ｃ：Ｓｉ比は、パルスプラズマ膜によって成膜された特徴の側壁で観察される低いウェットエッチング速度と矛盾しない。特定の実施形態では、膜の側壁は、（側壁の実質的に垂直な部分において、図に応じてＳＴＥＭ−ＥＥＬ解析にしたがって又は同等な解析にしたがって測定された、平均で、）少なくとも約０．４又は約０．５又は約０．６のＣ：Ｓｉ比を有する。図７Ａに示された例では、パルスプラズマによる膜の平均の側壁Ｃ：Ｓｉ比が約０．６５である一方で、図７Ｂにおける連続波による膜は、約０．３５の平均側壁Ｃ：Ｓｉ比を有する。
適用例１：半導体基板表面上のギャップを満たす方法であって、
（ａ）その中に前記基板を有する反応チャンバに気相の第１の反応物を導入し、前記第１の反応物を前記基板表面上に吸着させ、
（ｂ）前記第１の反応物の流れが停止した後に、前記反応チャンバをパージし、
（ｃ）前記第１の反応物が前記基板表面上に吸着される間に、気相の第２の反応物を前記反応チャンバに導入し、
（ｄ）前記基板表面上における前記第１の反応物と前記第２の反応物との間の表面反応を促して、前記ギャップを縁取る膜層を形成させるために、パルスプラズマであるプラズマに前記基板表面を暴露し、
（ｅ）前記プラズマを消滅させ、
（ｆ）前記反応チャンバをパージすること、
を備える方法。
適用例２：適用例１に記載の方法であって、
前記基板表面をプラズマに暴露する前記動作中における前記プラズマパルスの周波数は、約２５Ｈｚから約５０００Ｈｚの間である、方法。
適用例３：適用例２に記載の方法であって、
前記プラズマパルスの周波数は、約１００Ｈｚから約５００Ｈｚの間である、方法。
適用例４：適用例１から請求項３のいずれか一項に記載の方法であって、
前記堆積される膜は、シリコン窒化物膜又はシリコン炭窒化物膜である、方法。
適用例５：適用例１から請求項３のいずれか一項に記載の方法であって、
前記堆積される膜は、酸化物である、方法。
適用例６：適用例１から請求項５のいずれか一項に記載の方法であって、
前記動作（ｃ）及び前記動作（ｄ）は、少なくとも部分的に、同時に発生する、方法。
適用例７：適用例１から請求項６のいずれか一項に記載の方法であって、
前記プラズマは、容量結合プラズマ又は誘導結合プラズマである、方法。
適用例８：適用例１から請求項７のいずれか一項に記載の方法であって、
前記プラズマは、ＲＦプラズマ発生器を使用して生成される、方法。
適用例９：適用例１から請求項８のいずれか一項に記載の方法であって、
プラズマ電力は、約５０Ｗ／ステーションから約２５００Ｗ／ステーションの間である、方法。
適用例１０：適用例１から請求項９のいずれか一項に記載の方法であって、
前記ギャップの側壁の中間部分におけるウェットエッチング速度（ＷＥ m ）と、前記ギャップの頂部におけるウェットエッチング速度（ＷＥ t ）及び／又は前記ギャップの底部におけるウェットエッチング速度（ＷＥ b ）との比は、約０．２５から約３の間である、方法。
適用例１１：適用例１から請求項１０のいずれか一項に記載の方法であって、
前記ギャップ内の中間部分に形成される膜は、垂直方向に測定されたときに、約１Å／分から約２５Å／分の間のウェットエッチング速度を示す、方法。
適用例１２：適用例１から請求項１１のいずれか一項に記載の方法であって、
前記ギャップの側壁における平均の炭素：シリコン比は、少なくとも約０．４である、方法。
適用例１３：適用例１から請求項１２のいずれか一項に記載の方法であって、
前記膜の組成は、前記膜全体を通じて実質的に均一である、方法。
適用例１４：適用例１から請求項１３のいずれか一項に記載の方法であって、更に、
前記動作（ａ）から前記動作（ｆ）までを繰り返すことを備え、前記動作（ｄ）の一度目の繰り返しは、前記動作（ｄ）の二度目の繰り返しとは異なるパルス周波数で実施される、方法。
適用例１５：適用例１から請求項１４のいずれか一項に記載の方法であって、更に、
前記動作（ａ）から前記動作（ｆ）までを繰り返すことを備え、前記動作（ｄ）の一度目の繰り返しは、前記動作（ｄ）の二度目の繰り返しとは異なるデューティサイクルで実施される、方法。
適用例１６：適用例１から請求項１５のいずれか一項に記載の方法であって、更に、
前記動作（ａ）から前記動作（ｆ）までを繰り返すことを備え、前記動作（ｄ）の一度目の繰り返しは、前記動作（ｄ）の二度目の繰り返しとは異なるＲＦ電力で実施される、方法。
適用例１７：適用例１から請求項１６のいずれか一項に記載の方法であって、
前記パルスプラズマは、オン状態とオフ状態との間でパルス化される、方法。
適用例１８：適用例１から請求項１６のいずれか一項に記載の方法であって、
前記パルスプラズマは、少なくとも第１の電力状態と第２の電力状態との間でパルス化され、前記第１の電力状態の最中に供給される電力は、前記第２の電力状態の最中に供給される電力とは異なり、前記第１の電力状態及び前記第２の電力状態のいずれも、オフ状態に対応しない、方法。
適用例１９：基板上に膜を堆積させるための装置であって、
反応チャンバと、
気相の反応物を前記反応チャンバに供給するための入口と、
パルスプラズマを前記反応チャンバに提供するためのプラズマ発生器と、
コントローラであって、
（ａ）気相の第１の反応物を前記反応チャンバに導入するための命令と、
（ｂ）気相の第２の反応物を前記反応チャンバに導入するための命令と、
（ｃ）前記基板表面上における前記第１の反応物と前記第２の反応物との間の表面反応を促して、前記膜を形成させるために、前記第１の反応物の前記気相の流れが停止したときにパルスプラズマを定期的に打ち出して、前記基板表面をパルスプラズマに暴露するための命令と、
を有するコントローラと、
を備える装置。
適用例２０：適用例１９に記載の装置であって、
前記コントローラは、前記動作（ｃ）の最中に約２５Ｈｚから約５０００Ｈｚの間の周波数で前記プラズマをパルス化させるための命令を有する、装置。
適用例２１：適用例２０に記載の装置であって、
前記コントローラは、前記動作（ｃ）の最中に約１００Ｈｚから約５００Ｈｚの間の周波数で前記プラズマをパルス化させるための命令を有する、装置。
適用例２２：適用例１９から請求項２１のいずれか一項に記載の装置であって、
前記コントローラは、前記動作（ｂ）及び前記動作（ｃ）を少なくとも部分的に同時に実施するための命令を有する、装置。
適用例２３：適用例１９から請求項２２のいずれか一項に記載の装置であって、
前記コントローラは、前記動作（ｃ）を約５％から約９５％の間のプラズマデューティサイクルで実施するための命令を有する、装置
適用例２４：適用例１９から請求項２３のいずれか一項に記載の装置であって、
前記コントローラは、前記動作（ａ）から前記動作（ｃ）までを繰り返すための命令を有し、前記コントローラは、前記動作（ｃ）の一度目の繰り返しを前記動作（ｃ）の二度目の繰り返しとは異なるパルス周波数、及び／又はデューティサイクル、及び／又はＲＦ電力で実施するための命令を有する、装置。 7A and 7B show the relative planes for carbon and silicon as measured by STEM-EEL analysis of films deposited by continuous wave plasma (FIG. 7A) and films deposited by pulsed plasma (FIG. 7B). A density map is shown. These figures are shown in color for the purpose of showing the C: Si ratio in various parts of the deposited film. Comparing the sidewalls of the two films, it is clear that the pulsed plasma film has a higher C: Si ratio than the film prepared by continuous wave plasma. This high sidewall C: Si ratio is consistent with the low wet etch rate observed on the feature sidewalls formed by the pulsed plasma film. In certain embodiments, the membrane sidewalls (at an average, measured in accordance with the STEM-EEL analysis in accordance with the figure or in accordance with an equivalent analysis, in a substantially vertical portion of the sidewall) are at least about 0. Having a C: Si ratio of 4 or about 0.5 or about 0.6. In the example shown in FIG. 7A, the average sidewall C: Si ratio of the pulsed plasma film is about 0.65, whereas the continuous wave film in FIG. 7B has an average sidewall C: Si of about 0.35. Have a ratio.
Application Example 1: A method of filling a gap on the surface of a semiconductor substrate,
(A) introducing a gas phase first reactant into a reaction chamber having the substrate therein, adsorbing the first reactant onto the substrate surface;
(B) purging the reaction chamber after the flow of the first reactant has stopped;
(C) introducing a gas phase second reactant into the reaction chamber while the first reactant is adsorbed on the substrate surface;
(D) In order to promote a surface reaction between the first reactant and the second reactant on the substrate surface to form a film layer that borders the gap, a plasma that is a pulsed plasma is used. Exposing the substrate surface;
(E) extinguishing the plasma;
(F) purging the reaction chamber;
A method comprising:
Application Example 2: The method described in Application Example 1,
The method wherein the frequency of the plasma pulse during the operation of exposing the substrate surface to the plasma is between about 25 Hz and about 5000 Hz.
Application Example 3: The method described in Application Example 2,
The method wherein the frequency of the plasma pulse is between about 100 Hz and about 500 Hz.
Application Example 4: The method according to any one of Application Examples 1 to 3,
The method wherein the deposited film is a silicon nitride film or a silicon carbonitride film.
Application Example 5: The method according to any one of Application Examples 1 to 3, wherein
The method wherein the deposited film is an oxide.
Application Example 6: The method according to any one of Application Examples 1 to 5,
The method (c) and (d) occur at least partially simultaneously.
Application Example 7: The method according to any one of Application Examples 1 to 6,
The method, wherein the plasma is capacitively coupled plasma or inductively coupled plasma.
Application Example 8: The method according to any one of Application Examples 1 to 7,
The method wherein the plasma is generated using an RF plasma generator.
Application Example 9: The method according to any one of Application Examples 1 to 8, wherein
The method wherein the plasma power is between about 50 W / station and about 2500 W / station.
Application Example 10: The method according to any one of Application Examples 1 to 9, wherein
The ratio of the wet etch rate (WE m ) at the middle portion of the gap sidewall to the wet etch rate (WE t ) at the top of the gap and / or the wet etch rate (WE b ) at the bottom of the gap is about A method that is between 0.25 and about 3.
Application Example 11: The method according to any one of Application Examples 1 to 10, wherein
The method wherein the film formed in the middle portion within the gap exhibits a wet etch rate between about 1 liter / minute and about 25 liter / minute when measured in the vertical direction.
Application Example 12: The method according to any one of Application Examples 1 to 11, wherein
The average carbon: silicon ratio in the gap sidewalls is at least about 0.4.
Application Example 13: The method according to any one of Application Examples 1 to 12,
The method wherein the composition of the film is substantially uniform throughout the film.
Application Example 14: The method according to any one of Application Examples 1 to 13, further comprising:
Repeating the operation (a) to the operation (f), the first repetition of the operation (d) is performed at a different pulse frequency from the second repetition of the operation (d). Method.
Application Example 15: The method according to any one of Application Examples 1 to 14, further comprising:
Repeating the operation (a) to the operation (f), wherein the first repetition of the operation (d) is performed with a different duty cycle than the second repetition of the operation (d). Method.
Application Example 16: The method according to any one of Application Examples 1 to 15, further comprising:
Repeating the operation (a) to the operation (f), the first repetition of the operation (d) is performed with a different RF power than the second repetition of the operation (d). Method.
Application Example 17: The method according to any one of Application Examples 1 to 16, wherein
The method, wherein the pulsed plasma is pulsed between an on state and an off state.
Application Example 18: The method according to any one of Application Examples 1 to 16, wherein
The pulsed plasma is pulsed at least between a first power state and a second power state, and power supplied during the first power state is during the second power state. Unlike the power supplied to, neither the first power state nor the second power state corresponds to an off state.
Application Example 19: An apparatus for depositing a film on a substrate,
A reaction chamber;
An inlet for supplying gas phase reactants to the reaction chamber;
A plasma generator for providing a pulsed plasma to the reaction chamber;
A controller,
(A) instructions for introducing a gas phase first reactant into the reaction chamber;
(B) instructions for introducing a gas phase second reactant into the reaction chamber;
(C) promoting the surface reaction between the first reactant and the second reactant on the substrate surface to form the film so that the gas phase of the first reactant Instructions for periodically firing a pulsed plasma when flow stops and exposing the substrate surface to the pulsed plasma;
A controller having
A device comprising:
Application Example 20: The apparatus according to Application Example 19,
The controller has instructions for pulsing the plasma at a frequency between about 25 Hz and about 5000 Hz during the operation (c).
Application Example 21: The apparatus according to Application Example 20,
The apparatus, wherein the controller has instructions for pulsing the plasma at a frequency between about 100 Hz and about 500 Hz during the operation (c).
Application Example 22: The apparatus according to any one of Application Examples 19 to 21, wherein
The apparatus, wherein the controller has instructions for performing the operations (b) and (c) at least partially simultaneously.
Application Example 23: The apparatus according to any one of Application Examples 19 to 22,
The controller has instructions for performing the operation (c) with a plasma duty cycle between about 5% and about 95%.
Application Example 24: The apparatus according to any one of Application Examples 19 to 23,
The controller has a command for repeating the operation (a) to the operation (c), and the controller repeats the first repetition of the operation (c) for the second time of the operation (c). A device having instructions for performing at a different pulse frequency and / or duty cycle and / or RF power than.

Claims (24)

半導体基板表面上のギャップを満たす方法であって、
（ａ）その中に前記半導体基板を有する反応チャンバに気相の第１の反応物を導入し、前記第１の反応物を前記半導体基板表面上に吸着させ、
（ｂ）前記第１の反応物の流れが停止した後に、前記反応チャンバをパージし、
（ｃ）前記第１の反応物が前記半導体基板の表面上に吸着される間に、気相の第２の反応物を前記反応チャンバに導入し、
（ｄ）前記半導体基板の表面上における前記第１の反応物と前記第２の反応物との間の表面反応を促して、前記ギャップを縁取る膜層を形成させるために、パルスプラズマであるプラズマに前記半導体基板の表面を暴露し、
（ｅ）前記プラズマを消滅させ、
（ｆ）前記反応チャンバをパージすること、
を備える方法。 A method for filling a gap on a semiconductor substrate surface,
(A) introducing a gas phase first reactant into a reaction chamber having the semiconductor substrate therein, and adsorbing the first reactant on the surface of the semiconductor substrate;
(B) purging the reaction chamber after the flow of the first reactant has stopped;
(C) introducing a gas phase second reactant into the reaction chamber while the first reactant is adsorbed on the surface of the semiconductor substrate;
(D) pulsed plasma to promote a surface reaction between the first reactant and the second reactant on the surface of the semiconductor substrate to form a film layer bordering the gap. Exposing the surface of the semiconductor substrate to plasma;
(E) extinguishing the plasma;
(F) purging the reaction chamber;
A method comprising: 請求項１に記載の方法であって、
前記半導体基板の表面をプラズマに暴露する動作中におけるプラズマパルスの周波数は、約２５Ｈｚから約５０００Ｈｚの間である、方法。 The method of claim 1, comprising:
Wherein the frequency of the pulp Razumaparusu put the semiconductor substrate surface of the dynamic Sakuchu you exposed to plasma is between about 25Hz to about 5000 Hz, method. 請求項２に記載の方法であって、
前記プラズマパルスの周波数は、約１００Ｈｚから約５００Ｈｚの間である、方法。 The method of claim 2, comprising:
The method wherein the frequency of the plasma pulse is between about 100 Hz and about 500 Hz. 請求項１から請求項３のいずれか一項に記載の方法であって、
堆積される前記膜層は、シリコン窒化物膜層又はシリコン炭窒化物膜層である、方法。 A method according to any one of claims 1 to 3, comprising
The film layer to be sedimentary is a silicon nitride film layer or a silicon carbonitride film layer, methods. 請求項１から請求項３のいずれか一項に記載の方法であって、
堆積される前記膜層は、酸化物である、方法。 A method according to any one of claims 1 to 3, comprising
The film layer to be sedimentary is an oxide, methods. 請求項１から請求項５のいずれか一項に記載の方法であって、
動作（ｃ）及び動作（ｄ）は、少なくとも部分的に、同時に発生する、方法。 A method according to any one of claims 1 to 5, comprising
Operation (c)及beauty operation (d) is at least partially concurrent, method. 請求項１から請求項６のいずれか一項に記載の方法であって、
前記プラズマは、容量結合プラズマ又は誘導結合プラズマである、方法。 A method according to any one of claims 1 to 6, comprising
The method, wherein the plasma is capacitively coupled plasma or inductively coupled plasma. 請求項１から請求項７のいずれか一項に記載の方法であって、
前記プラズマは、ＲＦプラズマ発生器を使用して生成される、方法。 A method according to any one of claims 1 to 7, comprising
The method wherein the plasma is generated using an RF plasma generator. 請求項１から請求項８のいずれか一項に記載の方法であって、
プラズマ電力は、約５０Ｗ／ステーションから約２５００Ｗ／ステーションの間である、方法。 A method according to any one of claims 1 to 8, comprising
The method wherein the plasma power is between about 50 W / station and about 2500 W / station. 請求項１から請求項９のいずれか一項に記載の方法であって、
前記ギャップの側壁の中間部分におけるウェットエッチング速度（ＷＥm）と、前記ギャップの頂部におけるウェットエッチング速度（ＷＥt）及び／又は前記ギャップの底部におけるウェットエッチング速度（ＷＥb）との比は、約０．２５から約３の間である、方法。 A method according to any one of claims 1 to 9, comprising
The ratio of the wet etch rate (WE m ) at the middle portion of the gap sidewall to the wet etch rate (WE t ) at the top of the gap and / or the wet etch rate (WE b ) at the bottom of the gap is about A method that is between 0.25 and about 3. 請求項１から請求項１０のいずれか一項に記載の方法であって、
前記ギャップ内の中間部分に形成される膜層は、垂直方向に測定されたときに、約１Å／分から約２５Å／分の間のウェットエッチング速度を示す、方法。 A method according to any one of claims 1 to 10, comprising
The method wherein the film layer formed in the middle portion of the gap exhibits a wet etch rate between about 1 liter / minute and about 25 liter / minute when measured in the vertical direction. 請求項１から請求項１１のいずれか一項に記載の方法であって、
前記ギャップの側壁における平均の炭素：シリコン比は、少なくとも約０．４である、方法。 A method according to any one of claims 1 to 11, comprising
The average carbon: silicon ratio in the gap sidewalls is at least about 0.4. 請求項１から請求項１２のいずれか一項に記載の方法であって、
前記膜層の組成は、前記膜層の全体を通じて実質的に均一である、方法。 A method according to any one of claims 1 to 12, comprising
The composition of the film layer is substantially uniform throughout the membrane layer, methods. 請求項１から請求項１３のいずれか一項に記載の方法であって、更に、
動作（ａ）から動作（ｆ）までを繰り返すことを備え、動作（ｄ）の一度目の繰り返しは、動作（ｄ）の二度目の繰り返しとは異なるパルス周波数で実施される、方法。 14. A method according to any one of claims 1 to 13, further comprising:
Comprising repeating the up operation (a) or Rado operation (f), first time iteration of operation (d) is carried out at a different pulse frequency and the second time of repetition of the operation (d) ,Method. 請求項１から請求項１４のいずれか一項に記載の方法であって、更に、
動作（ａ）から動作（ｆ）までを繰り返すことを備え、動作（ｄ）の一度目の繰り返しは、動作（ｄ）の二度目の繰り返しとは異なるデューティサイクルで実施される、方法。 15. A method according to any one of claims 1 to 14, further comprising:
Comprising repeating the up operation (a) or Rado operation (f), first time iteration of operation (d) is performed in a different duty cycle than the second time of repetition of the operation (d) ,Method. 請求項１から請求項１５のいずれか一項に記載の方法であって、更に、
動作（ａ）から動作（ｆ）までを繰り返すことを備え、動作（ｄ）の一度目の繰り返しは、動作（ｄ）の二度目の繰り返しとは異なるＲＦ電力で実施される、方法。 The method according to any one of claims 1 to 15, further comprising:
Comprising repeating the up operation (a) or Rado operation (f), first time iteration of operation (d) is performed in a different RF power from the second time of repetition of the operation (d) ,Method. 請求項１から請求項１６のいずれか一項に記載の方法であって、
前記パルスプラズマは、オン状態とオフ状態との間でパルス化される、方法。 A method according to any one of claims 1 to 16, comprising
The method, wherein the pulsed plasma is pulsed between an on state and an off state. 請求項１から請求項１６のいずれか一項に記載の方法であって、
前記パルスプラズマは、少なくとも第１の電力状態と第２の電力状態との間でパルス化され、前記第１の電力状態の最中に供給される電力は、前記第２の電力状態の最中に供給される電力とは異なり、前記第１の電力状態及び前記第２の電力状態のいずれも、オフ状態に対応しない、方法。 A method according to any one of claims 1 to 16, comprising
The pulsed plasma is pulsed at least between a first power state and a second power state, and power supplied during the first power state is during the second power state. Unlike the power supplied to, neither the first power state nor the second power state corresponds to an off state. 基板上に膜を堆積させるための装置であって、
反応チャンバと、
気相の反応物を前記反応チャンバに供給するための入口と、
パルスプラズマを前記反応チャンバに提供するためのプラズマ発生器と、
コントローラであって、
（ａ）気相の第１の反応物を前記反応チャンバに導入するための命令と、
（ｂ）気相の第２の反応物を前記反応チャンバに導入するための命令と、
（ｃ）前記基板の表面上における前記第１の反応物と前記第２の反応物との間の表面反応を促して、前記膜を形成させるために、前記第１の反応物の前記気相の流れが停止したときにパルスプラズマを定期的に打ち出して、前記基板の表面をパルスプラズマに暴露するための命令と、
を有するコントローラと、
を備える装置。 An apparatus for depositing a film on a substrate,
A reaction chamber;
An inlet for supplying gas phase reactants to the reaction chamber;
A plasma generator for providing a pulsed plasma to the reaction chamber;
A controller,
(A) instructions for introducing a gas phase first reactant into the reaction chamber;
(B) instructions for introducing a gas phase second reactant into the reaction chamber;
(C) prompting a surface reaction between the first reactant and the second reactant on the surface of the substrate, in order to form the film, the gas phase of the first reactant Instructions for periodically firing a pulsed plasma when the flow of gas stops and exposing the surface of the substrate to the pulsed plasma;
A controller having
A device comprising: 請求項１９に記載の装置であって、
前記コントローラは、動作（ｃ）の最中に約２５Ｈｚから約５０００Ｈｚの間の周波数で前記プラズマをパルス化させるための命令を有する、装置。 The apparatus of claim 19, comprising:
Said controller comprising instructions for causing a pulsed the plasma at a frequency of between about 25Hz to about 5000Hz during operation (c), device. 請求項２０に記載の装置であって、
前記コントローラは、動作（ｃ）の最中に約１００Ｈｚから約５００Ｈｚの間の周波数で前記プラズマをパルス化させるための命令を有する、装置。 21. The apparatus of claim 20, wherein
Said controller comprising instructions for causing a pulsed the plasma at a frequency of between about 100Hz to about 500Hz during operation (c), device. 請求項１９から請求項２１のいずれか一項に記載の装置であって、
前記コントローラは、動作（ｂ）及び動作（ｃ）を少なくとも部分的に同時に実施するための命令を有する、装置。 The apparatus according to any one of claims 19 to 21, comprising:
Said controller having instructions for performing operating (b)及beauty operation (c) is at least partially simultaneously, device. 請求項１９から請求項２２のいずれか一項に記載の装置であって、
前記コントローラは、動作（ｃ）を約５％から約９５％の間のプラズマデューティサイクルで実施するための命令を有する、装置。 The apparatus according to any one of claims 19 to 22, comprising:
Said controller having instructions for performing operating the (c) the plasma duty cycle of between about 5% to about 95%, unit. 請求項１９から請求項２３のいずれか一項に記載の装置であって、
前記コントローラは、動作（ａ）から動作（ｃ）までを繰り返すための命令を有し、前記コントローラは、動作（ｃ）の一度目の繰り返しを動作（ｃ）の二度目の繰り返しとは異なるパルス周波数、及び／又はデューティサイクル、及び／又はＲＦ電力で実施するための命令を有する、装置。 24. The apparatus according to any one of claims 19 to 23, wherein:
The controller includes instructions for repeating until operation (a) or Rado operation (c), said controller operating the first time of the repetition of operation (c) the second time in (c) An apparatus having instructions for performing at a different pulse frequency and / or duty cycle and / or RF power than repetitive.
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Families Citing this family (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) * 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) * 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102378021B1 (en) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. Formation of SiOC thin films
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR20240010760A (en) 2017-05-05 2024-01-24 에이에스엠 아이피 홀딩 비.브이. Plasma Enhanced Deposition Processes for Controlled Formation of Oxygen Containing Thin Film
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
TWI766014B (en) * 2017-05-11 2022-06-01 荷蘭商Ａｓｍ智慧財產控股公司 Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
CN107974667B (en) * 2017-11-28 2019-08-16 南通大学 A kind of method of quick measurement sequential keyboard encoder ALD presoma critical pulse width
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (en) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
KR102657269B1 (en) 2018-02-14 2024-04-16 에이에스엠 아이피 홀딩 비.브이. Method for depositing a ruthenium-containing film on a substrate by a cyclic deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
TWI811348B (en) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
KR20210024462A (en) 2018-06-27 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Periodic deposition method for forming metal-containing material and films and structures comprising metal-containing material
CN112292477A (en) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
KR20200002519A (en) * 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
JP7079686B2 (en) * 2018-07-27 2022-06-02 東京エレクトロン株式会社 Film formation method and film formation equipment
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
KR20210091825A (en) 2018-12-13 2021-07-22 어플라이드 머티어리얼스, 인코포레이티드 Methods for Depositing Phosphorus Doped Silicon Nitride Films
TW202037745A (en) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming device structure, structure formed by the method and system for performing the method
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
TW202044325A (en) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
JP2020136677A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic accumulation method for filing concave part formed inside front surface of base material, and device
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
JP2020133004A (en) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Base material processing apparatus and method for processing base material
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
KR20200116033A (en) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR20200123380A (en) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system including a gas detector
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (en) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 Method of forming topologically controlled amorphous carbon polymer films
TW202113936A (en) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
KR20210043460A (en) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
JP2021097227A (en) 2019-12-17 2021-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming vanadium nitride layer and structure including vanadium nitride layer
KR20210080214A (en) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
JP2021109175A (en) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー Gas supply assembly, components thereof, and reactor system including the same
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
TW202146882A (en) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (en) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for growing phosphorous-doped silicon layer and system of the same
TW202203344A (en) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 System dedicated for parts cleaning
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
CN113394086A (en) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 Method for producing a layer structure having a target topological profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
JP2021172884A (en) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming vanadium nitride-containing layer and structure comprising vanadium nitride-containing layer
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
TW202146831A (en) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vertical batch furnace assembly, and method for cooling vertical batch furnace
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR20210143653A (en) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TW202200837A (en) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Reaction system for forming thin film on substrate
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
TW202219628A (en) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
TW202212623A (en) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming metal silicon oxide layer and metal silicon oxynitride layer, semiconductor structure, and system
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
KR20220053482A (en) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610169B2 (en) * 2001-04-21 2003-08-26 Simplus Systems Corporation Semiconductor processing system and method
US20060105106A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Tensile and compressive stressed materials for semiconductors
WO2007064376A2 (en) * 2005-11-28 2007-06-07 Honeywell International Inc. Organometallic precursors and related intermediates for deposition processes, their production and methods of use
US7651961B2 (en) * 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
JP5151260B2 (en) * 2007-06-11 2013-02-27 東京エレクトロン株式会社 Film forming method and film forming apparatus
JP2010539730A (en) * 2007-09-18 2010-12-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Method for forming a silicon-containing film
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
US8252653B2 (en) * 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
GB0823565D0 (en) 2008-12-24 2009-01-28 Oxford Instr Plasma Technology Signal generating system
US8569184B2 (en) * 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
JP6043546B2 (en) * 2011-10-21 2016-12-14 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program
JP5547763B2 (en) * 2012-03-16 2014-07-16 三井造船株式会社 Plasma generating method, thin film forming method using the method, and plasma generating apparatus
US8952765B2 (en) * 2012-03-23 2015-02-10 Mks Instruments, Inc. System and methods of bimodal automatic power and frequency tuning of RF generators

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