JP2015038919A - Wafer manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer manufacturing method capable of preventing occurrence of a distortion caused by a resin in an outer periphery of the wafer and manufacturing a wafer with excellent flatness even when the resin is applied to the wafer in a manufacturing step.SOLUTION: A wafer manufacturing method for applying a resin to absorb undulation generated in the wafer includes the steps of: slicing a single crystal ingot to obtain a wafer (ST11); supplying a curable resin to a first surface of the wafer obtained by the slicing step, expanding the resin to the whole surface of the first surface, and sticking the resin to the first surface by curing the resin (ST12); removing the outer periphery of the wafer till the wafer becomes a desired diameter after the resin sticking step (ST13); and removing the resin attached to the outer periphery of the wafer.

Description

  The present invention relates to a wafer manufacturing method, and more particularly to a wafer manufacturing method for manufacturing a wafer having excellent flatness from a wafer cut from a single crystal ingot.

  Conventionally, in the manufacturing process of a semiconductor wafer, after grinding the outer periphery of a single crystal ingot, an as-sliced wafer (hereinafter simply referred to as “wafer”) is cut out by a cutting device such as a wire saw, and the outer peripheral edge of the wafer is chamfered. To do. Further, after the chamfered wafer is ground to a uniform thickness by double-head grinding or the like, lapping and etching are performed in order to remove the waviness of the wafer generated during slicing (see, for example, Patent Document 1).

  On the other hand, in order to omit the double-head grinding process and the lapping process on the wafer, the present applicant attaches a curable resin to one surface of the wafer sliced from the single crystal ingot and absorbs the undulation generated on the wafer with the resin. On the other hand, a wafer manufacturing method in which waviness removal and grinding to form a uniform thickness are performed in the same grinding process has been proposed (for example, see Patent Document 2). According to this method, the waviness generated in the wafer in the grinding process can be removed and the thickness of the wafer can be made uniform, so that the double-head grinding process and the lapping process can be omitted, and the manufacturing efficiency of the wafer can be improved.

JP-A-9-97773 JP 2006-269761 A

  However, in the wafer manufacturing method that omits the double-head grinding step described above, a situation may occur in which the curable resin wraps around from the wafer attachment surface toward the outer peripheral edge. In this case, in the wafer, the amount of the resin attached is larger than that in the other portions by the amount that wraps around the outer peripheral edge. As a result, there is a problem that a relatively large stress is generated in the vicinity of the outer periphery of the wafer when the resin is cured, and distortion is generated in the vicinity of the outer periphery of the wafer. When the other surface of the wafer (surface opposite to the resin-bonding surface) is ground in a state where the distortion is generated in the vicinity of the outer periphery of the wafer, the grinding distortion is generated in the vicinity of the outer periphery of the wafer. There is a problem.

  The present invention has been made in view of such problems, and even when a resin is stuck to a wafer in the manufacturing process, it prevents distortion generated on the outer periphery of the wafer due to the resin, An object of the present invention is to provide a wafer manufacturing method capable of manufacturing a wafer having excellent flatness.

  The wafer manufacturing method of the present invention includes a slicing step of slicing a single crystal ingot to obtain a wafer, supplying a curable resin to the first surface of the wafer obtained in the slicing step, and extending over the entire first surface. A resin pasting step for curing and pasting the resin on the first surface, a wafer outer circumference removing step for removing the outer circumference of the wafer to a desired diameter after the resin pasting step, and the wafer outer circumference After the removal step, the resin surface is held by a holding table, and a first grinding step of grinding a second surface opposite to the first surface, and after the first grinding step, the resin A resin peeling step of peeling the first surface from the first surface, and after the resin peeling step, the second surface ground in the first grinding step is held by a holding table and the second surface is ground. After the grinding process and the second grinding process, the outer peripheral edge of the wafer is chamfered. Characterized by comprising a peripheral shaping step.

  According to the method for manufacturing a wafer, since the outer periphery of the wafer is removed in the wafer outer periphery removing process, the resin wrapping around from the first surface of the wafer to the outer peripheral side can be removed in the resin attaching process. It is possible to eliminate the influence of stress that can occur during the curing of the resin that wraps around the outer peripheral edge. As a result, even when a resin is stuck to the wafer during the manufacturing process, distortion generated on the outer periphery of the wafer due to the resin can be prevented, and a wafer having excellent flatness can be manufactured.

  According to the present invention, even when a resin is stuck to a wafer during the manufacturing process, it is possible to prevent distortion generated on the outer periphery of the wafer due to the resin and to manufacture a wafer with excellent flatness. It becomes possible.

It is a figure for demonstrating the schematic process of the manufacturing method of the wafer which concerns on this Embodiment. It is a schematic diagram for demonstrating the single crystal ingot from which a wafer is acquired in a slicing process. It is a schematic diagram for demonstrating the state of the wafer acquired at the slicing process. It is a schematic diagram for demonstrating the state of the wafer in a resin sticking process (resin application | coating process). It is a schematic diagram for demonstrating the state of the wafer in a resin sticking process (resin application | coating process). It is a schematic diagram for demonstrating the state of the wafer in a resin sticking process (resin application | coating process). It is a schematic diagram for demonstrating the state of the wafer in a resin sticking process (resin hardening process). It is a schematic diagram for demonstrating the state of the wafer in a wafer outer periphery removal process. It is a schematic diagram for demonstrating the state of the wafer in a primary grinding process. It is a schematic diagram for demonstrating the state of the wafer in a resin peeling process. It is a schematic diagram for demonstrating the state of the wafer in a secondary grinding process. It is a schematic diagram for demonstrating the state of the wafer in an outer periphery shaping process.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the wafer manufacturing method according to the present embodiment, various processes are performed on a wafer (as-sliced wafer) cut out from a single crystal ingot by a cutting device such as a wire saw without grinding the outer periphery of the single crystal ingot. To produce a wafer having excellent flatness. In particular, the wafer manufacturing method according to the present embodiment is suitably used when manufacturing a wafer from a single crystal ingot having a small longitudinal dimension and a large radial dimension.

  FIG. 1 is a diagram for explaining schematic steps of the wafer manufacturing method according to the present embodiment. As shown in FIG. 1, in the method for manufacturing a wafer according to the present embodiment, a slicing step (ST11) for slicing a single crystal ingot to obtain a wafer, and the first surface of the wafer obtained in the slicing step is curable. A resin adhering step (ST12) for adhering the resin, a wafer outer periphery removing step (ST13) for removing the outer periphery of the wafer to which the resin is adhered, and a second surface that is opposite to the first surface is ground. A primary grinding step (ST14: first grinding step), a resin peeling step (ST15) for peeling the resin from the first surface, a secondary grinding step (ST16: second grinding step) for grinding the first surface, By performing the outer periphery shaping step (ST17) for chamfering the outer peripheral edge of the wafer, a wafer having excellent flatness can be produced by preventing distortion generated on the outer periphery of the wafer due to the resin. . Hereinafter, each process in the manufacturing method of the wafer concerning this embodiment is explained.

  The slicing step is a step of obtaining a wafer by slicing a single crystal ingot. In this slicing step, the wafer 10 is obtained by slicing the single crystal ingot 1 with a cutting device such as a blade saw or a wire saw, as shown in FIG. The single crystal ingot 1 is manufactured, for example, by a single crystal pulling method, and generally has a cylindrical shape. A wafer 10 having a generally disk shape is obtained by cutting one end of the single crystal ingot 1 manufactured in this way with a wire saw.

  FIG. 3 is a schematic diagram for explaining the state of the wafer 10 acquired in the slicing step. As shown in FIG. 3, the wafer 10 cut out from the single crystal ingot 1 has a first surface 11 constituting the lower surface shown in FIG. 3 and an upper surface shown in FIG. Waves (fine irregularities on the surface layer) 11a and 12a generated on the surface layer of the second surface 12 to be formed are formed. Further, warpage may occur in the entire wafer 10 due to these undulations.

  In the manufacturing method of the wafer 10 according to the present embodiment, a resin sticking step is performed on such a wafer 10. In the resin sticking step, the curable resin is supplied to the first surface 11 of the wafer 10 obtained in the slicing step, and is expanded to the entire surface of the first surface 11, and then the curable resin is cured to form the first surface 11. It is the process of making it stick. This resin sticking process includes a resin coating process and a resin curing process. The resin application process is a process of applying a curable resin to the entire first surface 11 of the wafer 10. The resin curing step is a step of curing the curable resin expanded over the entire first surface 11.

  In the following description, an explanation will be given using an ultraviolet curable resin having a property of being cured by irradiation of ultraviolet rays as the curable resin. However, the curable resin used in the method for manufacturing the wafer 10 according to the present embodiment is not limited to the ultraviolet curable resin and can be appropriately changed. For example, a resin that cures by heat (thermosetting resin), a resin that cures by impact such as ultrasonic vibration (impact curable resin), a resin that cures by light of a wavelength other than ultraviolet (light Curable resin) and the like can be applied.

  A resin sticking process is implemented using the resin sticking apparatus which shows the principal part in FIGS. This resin sticking apparatus includes a stage 21 having a horizontal holding surface 21a into which a wafer 10 is carried, a UV lamp 22 that irradiates ultraviolet rays from below the stage 21, and a pressure that presses the wafer 10 on the stage 21. And a pad 23. The stage 21 is made of, for example, borosilicate glass or quartz glass that transmits ultraviolet rays. A holding part 231 for sucking and holding the wafer 10 is provided on the lower surface of the pressing pad 23. The holding portion 231 has a suction surface 231a made of, for example, a porous ceramic material. The holding unit 231 is connected to a suction source (not shown), and sucks and holds the wafer 10 with the suction surface 231a.

  In the resin coating process using such a resin sticking apparatus, first, the wafer 10 cut out by the slicing process is loaded into the stage 21 and placed at a predetermined position on the holding surface 21a. At this time, the wafer 10 is loaded so that the first surface 11 is placed on the holding surface 21a and the second surface 12 is exposed. In addition, the wafer 10 is carried in to the stage 21 in the state mounted on the film 24 conveyed on the stage 21 of a resin sticking apparatus, for example.

  After the pressing pad 23 is moved downward and the wafer 10 is sucked and held by the holding portion 231, the pressing pad 23 is moved upward to a standby position separated from the stage 21 by a certain distance. Then, an appropriate amount of the ultraviolet curable resin 25 is dropped on the film 24 that has transported the wafer 10. Thereafter, the pressing pad 23 is moved downward, and the held first surface 11 of the wafer 10 is pressed with a uniform pressing force in the direction of the stage 21 onto which the ultraviolet curable resin is dropped.

  4-6 is a schematic diagram for demonstrating the state of the wafer 10 in a resin sticking process (resin application | coating process). 4 shows a state before the wafer 10 is pressed against the stage 21 on which the ultraviolet curable resin 25 is dropped, FIG. 5 shows a state after the wafer 10 is pressed, and FIG. The state where the suction holding of the wafer 10 is released is shown. In the state shown in FIGS. 4 and 5, the second surface 12 of the wafer 10 is sucked and held by the holding portion 231 of the pressing pad 23. 4 and 5, for convenience of explanation, undulations 11 a and 12 a generated on the wafer 10 are emphasized, and a gap is shown between the suction surface 231 a and the second surface 12. However, generally, the size of the undulations 11a and 12a generated in the wafer 10 is less than 50 μm, and does not hinder the suction holding by the suction surface 231a.

  The wafer 10 sucked and held by the holding unit 231 is moved downward as indicated by an arrow A in FIG. 4 and placed on the stage 21 (more precisely, the film 24 disposed on the stage 21). Then, as shown by an arrow B in FIG. 5, the entire surface is pressed from the second surface 12 side toward the stage 21 with a uniform pressing force. As a result, the ultraviolet curable resin 25 is expanded (pushed out) below the first surface 11 of the wafer 10, and the ultraviolet curable resin 25 is applied to the entire surface of the first surface 11. A part of the ultraviolet curable resin 25 expanded below the first surface 11 protrudes outward from the wafer 10 and wraps around the outer peripheral edge 10 a from the first surface 11.

  When the suction holding by the holding unit 231 is released and the pressing pad 23 is moved upward as indicated by an arrow C in FIG. 6, the wafer 10 is in a state where the first surface 11 is placed on the ultraviolet curable resin 25. Left on stage 21. At this time, the undulations 11 a and 12 a return to the first surface 11 and the second surface 12 due to the internal stress of the wafer 10. In addition, a part of the ultraviolet curable resin 25 that has wrapped around the outer peripheral edge 10a of the wafer 10 remains as it is. In this way, the resin coating process is completed, and the process proceeds to the resin curing process.

  In the resin curing step of the resin sticking step, the ultraviolet curable resin 25 on which the wafer 10 is placed is irradiated with ultraviolet rays from the UV lamp 22 and the ultraviolet curable resin 25 is cured. FIG. 7 is a schematic diagram for explaining the state of the wafer 10 in the resin curing step. As shown in FIG. 7, by irradiating ultraviolet rays from a UV lamp 22, the wafer 10 is fixed on the film 24 in a state where the shapes of the undulations 11a and 12a are maintained. Since the ultraviolet curable resin 25 is cured on the film 24 placed on the horizontal holding surface 21a, a flat surface 25a based on the holding surface 21a is formed on the lower surface thereof. It has become. If the ultraviolet curable resin 25 is thus cured, the resin curing step (resin pasting step) is completed.

  In the state where the ultraviolet curable resin 25 is cured in this resin curing step, the stress that deforms the wafer 10 accompanying the curing of the ultraviolet curable resin 25 is inherent. In particular, in the wafer 10, the ultraviolet curable resin 25 is in a state of being wrapped around the outer peripheral edge 10a (that is, in a state of adhering to the side surface of the wafer 10), and the amount of adhesion is larger than other portions. For this reason, a relatively large stress is generated in the vicinity of the outer periphery of the wafer 10, and a strain is generated in the vicinity of the outer periphery of the wafer 10.

  Thus, a wafer outer periphery removal process is implemented with respect to the wafer 10 which the resin sticking process was complete | finished. This wafer outer periphery removing step is a step of removing the outer periphery of the wafer 10 so that the outer peripheral dimension of the wafer 10 to which the ultraviolet curable resin 25 is adhered becomes a desired diameter. In the wafer outer periphery removing step, the ultraviolet curable resin 25 adhering to the outer periphery of the wafer 10 is also removed.

  The wafer outer periphery removing step is performed using a cutting apparatus whose main part is shown in FIG. The cutting apparatus includes a holding table 31 that holds the wafer 10 and a cutting blade 32 that cuts the outer periphery of the wafer 10 held on the holding table 31. On the upper surface of the holding table 31, a holding unit 311 that sucks and holds the wafer 10 horizontally is provided. The holding portion 311 has a suction surface 311a made of, for example, a porous ceramic material. The holding unit 311 is connected to a suction source (not shown), and sucks and holds the wafer 10 with the suction surface 311a. The holding table 31 is connected to a rotation driving mechanism (not shown), and is rotated while the wafer 10 is held by the holding unit 311 by the rotation driving mechanism. The cutting blade 32 is attached to one end of the spindle unit 33 and is configured to be rotatable according to the driving force of a driving motor (not shown) provided in the spindle unit 33. The cutting blade 32 is connected to a drive mechanism (not shown) and is configured to be movable in a direction approaching / separating from the holding table 31. For example, the cutting blade 32 is constituted by a diamond blade in which diamond abrasive grains are hardened with a binder such as metal bond or resin bond.

  In the wafer outer periphery removing step using such a cutting device, first, the wafer 10 to which the ultraviolet curable resin 25 is attached in the resin attaching step is carried onto the holding table 31 and a predetermined position on the suction surface 311a. (See FIG. 8). At this time, the wafer 10 is loaded so that the flat surface 25a of the ultraviolet curable resin 25 is placed on the suction surface 311a and the second surface 12 is exposed. In addition, the wafer 10 is carried in the holding table 31 of a cutting device with a part of film 24 in which the wafer 10 was mounted in the resin sticking process, for example.

  FIG. 8 is a schematic diagram for explaining the state of the wafer 10 in the wafer outer periphery removing step. As shown in FIG. 8, the wafer 10 loaded onto the holding table 31 is sucked and held by the suction surface 311a. And it rotates in response to the rotational force by the rotational drive mechanism in the suction-held state. On the other hand, the cutting blade 32 approaches the holding table 31 from a standby position where the wafer 10 can be received on the holding table 31. And it rotates according to the drive force of a drive motor, and the outer peripheral part of the wafer 10 is cut | disconnected with the ultraviolet curable resin 25 together. When the holding table 31 is rotated with the cutting blade 32 cutting the outer peripheral portion of the wafer 10 and the entire outer peripheral portion of the wafer 10 is removed, the wafer outer peripheral removing step ends.

  In this way, in the wafer outer periphery removing step, the outer periphery of the wafer 10 is removed, so that the ultraviolet curable resin 25 that wraps around the outer peripheral edge 10 a together with the outer peripheral portion of the wafer 10 is removed. As a result, the stress inherent in the wafer 10 is removed as the ultraviolet curable resin 25 wraps around the outer peripheral edge 10a of the wafer 10 is cured. As a result, the distortion generated in the vicinity of the outer periphery of the wafer 10 is removed.

  Thus, a primary grinding process, a resin peeling process, and a secondary grinding process are implemented with respect to the wafer 10 which the wafer outer periphery removal process using the cutting device was complete | finished. The primary grinding step is a step of holding the surface of the ultraviolet curable resin 25 attached to the removed wafer 10 that has been removed by the outer periphery removal step and grinding the second surface 12 of the wafer 10. The resin peeling step is a step of peeling the ultraviolet curable resin 25 from the first surface 11 of the wafer 10. The secondary grinding step is a step of holding the second surface 12 of the wafer 10 ground in the primary grinding step and grinding the first surface 11 of the wafer 10.

  A primary grinding process and a secondary grinding process are implemented using the grinding apparatus which shows the principal part in FIG. 9 (FIG. 11). This grinding apparatus includes a chuck table 41 constituting a holding table for holding the wafer 10 and a grinding unit 42 for grinding the surface of the wafer 10 held on the chuck table 41. A holding unit 411 that holds the wafer 10 horizontally is provided on the upper surface of the chuck table 41. The holding portion 411 has a suction surface 411a formed of, for example, a porous ceramic material. The holding unit 411 is connected to a suction source (not shown), and sucks and holds the wafer 10 with the suction surface 411a. Further, the chuck table 41 is connected to a rotation driving mechanism (not shown), and is rotated with the wafer 10 held by the holding unit 411 by the rotation driving mechanism. At the lower end of the grinding unit 42, a grinding wheel 42a that is detachably mounted is provided. For example, the grinding wheel 42a is composed of a diamond wheel obtained by hardening diamond abrasive grains with a binder such as a metal bond or a resin bond.

  In the primary grinding process using the grinding apparatus having such a configuration, first, the wafer 10 is placed on the chuck table 41 arranged at the standby position. Then, the chuck table 41 is moved to a grinding position by the grinding unit 42 while the wafer 10 is sucked and held on the holding unit 411. Then, the grinding unit 42 is moved downward and is rotated, whereby the processing surface (second surface 12) of the wafer 10 exposed on the chuck table 411 is ground by the grinding wheel 42a.

  FIG. 9 is a schematic diagram for explaining the state of the wafer 10 in the primary grinding process. FIG. 9 shows a state after the undulation 12a of the second surface 12 is removed by grinding of the grinding unit 42. As shown in FIG. 9, in the primary grinding process, the first surface 11 of the wafer 10 is sucked and held by the suction surface 411 a of the chuck table 41. In the wafer 10, the flat surface 25 a of the ultraviolet curable resin 25 is sucked and held by the suction surface 411 a through the film 24. At this time, the shape of the undulation 12a is maintained on the second surface 12 of the wafer 10 (state shown in FIG. 8). Grinding by the grinding unit 42 is performed in the state of being sucked and held in this way.

  Thus, in the primary grinding step, the grinding by the grinding unit 42 is performed in a state in which the shape of the undulation 12a of the second surface 12 is maintained, so that the undulation 12a of the second surface 12 can be effectively removed. It has become a thing. And as shown in FIG. 9, when the waviness 12a of the 2nd surface 12 is removed, a primary grinding process will be completed and it will transfer to a resin peeling process.

  The resin peeling process is performed by, for example, an operator when shifting from the primary grinding process to the secondary grinding process. FIG. 10 is a schematic diagram for explaining the state of the wafer 10 in the resin peeling step. FIG. 10 shows the state of the process of peeling the ultraviolet curable resin 25 cured from the wafer 10.

  As shown in FIG. 10, in the resin peeling step, the ultraviolet curable resin 25 attached to the first surface 11 of the wafer 10 is peeled off together with the film 24. On the first surface 11 from which the ultraviolet curable resin 25 has been peeled off, the shape of the undulation 11a is maintained. By removing all the cured UV curable resin 25 from the wafer 10, the resin peeling process is completed, and the process proceeds to the secondary grinding process.

  As described above, the secondary grinding process is performed by using a grinding apparatus common to the primary grinding process. FIG. 11 is a schematic diagram for explaining the state of the wafer 10 in the secondary grinding process. FIG. 11 shows a state in which the undulation 11a of the first surface 11 has been removed by the grinding of the grinding unit 42. As shown in FIG. 11, the waviness 12a is removed from the wafer 10 in the primary grinding process, and the flattened second surface 12 is sucked and held by the suction surface 411a. At this time, the waviness 11a is maintained on the first surface 11 of the wafer 10 (a state where the front and back of the wafer 10 shown in FIG. 10 are reversed). Grinding by the grinding unit 42 is performed in a state where the second surface 12 thus flattened is suction-held.

  Thus, in the secondary grinding step, the planarization of the second surface 12 is used as a reference surface, and the grinding by the grinding unit 42 is performed in a state where the shape of the undulation 11a of the first surface 11 is maintained. In addition, the swell 11a of the first surface 11 can be removed. And as shown in FIG. 11, when the wave | undulation 11a of the 1st surface 11 is removed, a secondary grinding process will be completed and it will transfer to an outer periphery shaping process.

  The outer periphery shaping process is a process of chamfering the outer peripheral edge 10a of the wafer 10 whose first surface 11 has been ground in the secondary grinding process. The outer periphery shaping step is performed using an outer periphery shaping device whose main part is shown in FIG. The outer periphery shaping device includes a rotary table 51 that rotatably holds the wafer 10, and an outer periphery shaping unit 52 that chamfers the outer peripheral edge 10 a of the wafer 10 held on the rotary table 51. The turntable 51 is connected to a rotation drive mechanism (not shown), and is rotated while the wafer 10 is held by the rotation drive mechanism. The outer periphery shaping unit 52 is provided with an outer periphery shaping grindstone 52a on its side surface. For example, the outer peripheral grinding stone 52a is composed of a diamond grinding stone in which diamond abrasive grains are hardened with a binder such as a metal bond or a resin bond. The outer periphery shaping unit 52 is connected to a drive motor (not shown) and is configured to be rotatable according to the drive force of the drive motor.

  In the outer periphery shaping step using such an outer periphery shaping device, first, the wafer 10 having the first surface 11 ground in the secondary grinding step is loaded onto and held on the rotary table 51 (see FIG. 12A). At this time, the surface of the wafer 10 held on the rotary table 51 may be either the first surface 11 or the second surface 12.

  FIG. 12 is a schematic diagram for explaining the state of the wafer 10 in the outer periphery shaping step. FIG. 12A shows a state in which the outer peripheral edge 10a of the wafer 10 is chamfered by the outer periphery shaping step, and FIG. 12B shows the wafer 10 completed through the outer periphery shaping step. As shown in FIG. 12A, the wafer 10 loaded on the turntable 51 rotates by receiving the rotational force from the rotation drive mechanism. On the other hand, the outer periphery shaping unit 52 approaches the outer peripheral edge 10 a of the wafer 10 on the turntable 51 from a standby position where the wafer 10 can be received on the turntable 51. And it rotates according to the drive force of a drive motor, and the outer periphery 10a of the wafer 10 is chamfered. When all of the outer peripheral edge 10a of the wafer 10 is chamfered in this way, the outer periphery shaping process is completed, and the manufacturing method of the wafer 10 according to the present embodiment is completed. Thereby, as shown in FIG. 12, the wafer 10 excellent in flatness is manufactured.

  Thus, in the manufacturing method of wafer 10 according to the present embodiment, since the outer periphery of wafer 10 is removed in the wafer outer periphery removing step, outer periphery from first surface 11 of wafer 10 in the resin bonding step. Since the ultraviolet curable resin 25 wrapping around to the 10a side can be removed, it is possible to eliminate the influence of stress that may occur when the ultraviolet curable resin 25 wrapping around to the outer peripheral edge 10a side is cured. As a result, even when the ultraviolet curable resin 25 is adhered to the wafer 10 during the manufacturing process, distortion generated on the outer periphery of the wafer 10 due to the ultraviolet curable resin 25 can be prevented, and the flatness is excellent. The wafer 10 can be manufactured.

  In addition, in the method for manufacturing the wafer 10 according to the present embodiment, the UV curable property that has gone around the outer peripheral edge 10 a together with the outer peripheral portion of the wafer 10 by removing the outer periphery of the wafer 10 in the wafer outer peripheral removal step. Resin 25 is removed. For this reason, since it is not necessary to apply the ultraviolet curable resin 25 to the first surface 11 of the wafer 10 with high accuracy in the resin bonding process, the work efficiency in the resin bonding process can be improved, and the entire manufacturing method It becomes possible to improve the manufacturing efficiency of the.

  In addition, this invention is not limited to the said embodiment, It can change and implement variously. In the above-described embodiment, the size, shape, and the like illustrated in the accompanying drawings are not limited to this, and can be appropriately changed within a range in which the effect of the present invention is exhibited. In addition, various modifications can be made without departing from the scope of the object of the present invention.

  For example, in the above embodiment, in the resin bonding step (resin coating step), the ultraviolet curable resin 25 is dropped onto the stage 21 (more specifically, the film 24 on the stage 21) of the resin bonding device. On the other hand, a case will be described in which the UV curable resin 25 is supplied to the first surface 11 of the wafer 10 and extended to the entire first surface 11 by moving the pressing pad 23 holding the wafer 10 to the stage 21 side. (See FIGS. 4 and 5). However, the method for supplying and expanding the ultraviolet curable resin 25 to the first surface 11 of the wafer 10 is not limited to this and can be appropriately changed. For example, the first surface 11 of the wafer 10 is disposed so as to face upward, and the ultraviolet curable resin 25 is directly dropped onto the first surface 11, while the pressing means such as the pressing pad 23 is formed thereon. The UV curable resin 25 may be expanded over the entire first surface 11 by pressing.

  Moreover, in the said embodiment, the case where the wafer 10 which the slicing process complete | finished is conveyed to the stage 21 of a resin sticking apparatus with the film 24 is demonstrated (refer FIG. 4). However, the transfer means for transferring the wafer 10 between processes is not limited to the film 24 and can be changed as appropriate. For example, it may be transferred to the stage 21 by a transfer arm having a suction holding function, or may be transferred to the suction surface 231a of the pressing pad 23.

  As described above, the present invention removes the outer periphery of the wafer 10 in the wafer outer periphery removing step, so that the ultraviolet curable resin 25 attached around the outer peripheral edge 10a of the wafer 10 in the resin attaching step. Therefore, even when the ultraviolet curable resin 25 is attached to the wafer 10 during the manufacturing process, distortion generated on the outer periphery of the wafer 10 due to the ultraviolet curable resin 25 can be prevented, and the flatness can be improved. This has the effect that an excellent wafer 10 can be manufactured, and is particularly useful for manufacturing a wafer 10 that requires flatness.

1 Single crystal ingot 10 Wafer (As-sliced wafer)
10a outer peripheral edge 11 first surface 11a undulation 12 second surface 12a undulation 21 stage 21a holding surface 22 UV lamp 23 pressing pad 231 holding portion 231a suction surface 24 film 25 ultraviolet curable resin 31 holding table 311 holding portion 311a suction surface 32 cutting Blade 33 Spindle unit 41 Chuck table 411 Holding portion 411a Suction surface 42 Grinding unit 42a Grinding wheel 51 Rotary table 52 Peripheral shaping unit 52a Peripheral shaping grindstone

Claims (1)

A slicing step of slicing a single crystal ingot to obtain a wafer;
Supplying a curable resin to the first surface of the wafer obtained in the slicing step, expanding the whole surface of the first surface, curing the resin, and attaching the resin to the first surface;
After the resin sticking step, a wafer outer periphery removing step for removing the outer periphery of the wafer so as to have a desired diameter,
After the wafer outer periphery removing step, a first grinding step of holding the resin surface with a holding table and grinding a second surface opposite to the first surface;
A resin peeling step of peeling the resin from the first surface after the first grinding step;
After the resin peeling step, a second grinding step of holding the second surface ground in the first grinding step with a holding table and grinding the first surface;
After the second grinding step, a peripheral shaping step of chamfering the outer periphery of the wafer;
A method for producing a wafer, comprising:

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