JP2015037167A - Manufacturing method for junction structure, structure and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a junction method capable of joining a base to a part in a short time.SOLUTION: The manufacturing method for junction structure, having a base and a part, at least either one of which has penetrability against irradiating light, includes: a process for forming a conductive member at at least either one of the base and the part; a process for laminating the base and the part through the conductive member; and a process for joining the base and the part by irradiating the conductive member with light from a direction of the base or the part with penetrability.

Description

  The present invention relates to a method for manufacturing a bonded structure, a structure, and applications thereof.

  Patent Document 1 discloses a method of joining members using a paste. The paste includes a dispersion medium, and metal nanoparticles (conductive member) are dispersed in the dispersion medium. The joining method of Patent Document 1 employs a spacer to increase the thickness of the joining layer as much as necessary and pressurize with a large applied pressure, thereby increasing the joining strength after sintering.

JP 2011-71301 A

  However, in the joining method of Patent Document 1, since the conductive member is sintered by heating in a heating furnace, it takes a long time to sinter the conductive member.

  The present invention has been made in view of the above problems, and an object thereof is to provide a manufacturing method, a structure, and an apparatus for a bonded structure capable of bonding a base and a component in a short time.

  A method for manufacturing a bonded structure according to the present invention is a method for manufacturing a bonded structure including a base and a component, at least one of which is transparent to light to be irradiated, wherein at least one of the base and the component is electrically conductive. Forming the member, laminating the base and the component via the conductive member, and irradiating the conductive member with the light from the direction of the transparent base or the component. Joining the base and the components.

  In one embodiment, the base is transparent to the light to be irradiated, and the base includes a joint surface that joins the component via the conductive member, and a non-joint surface opposite to the joint surface. In the step of joining the base and the component, the light is applied to the conductive member from the direction of the non-joint surface. Alternatively, in the case of wiring formation, light irradiation from the upper surface of the wiring may be performed.

  In one embodiment, silver, copper or nickel particles are dispersed in the conductive member.

  In one embodiment, in the step of forming the conductive member, the conductive member is formed by a plating process, a vapor deposition process, or an etching foil film process.

  In one embodiment, the step of forming the conductive member includes a step of forming a first conductive member in a bonding region to be bonded to the component, and a step of forming a second conductive member in a non-bonding region that is not bonded to the component. The first conductive member contains a polymer or glass.

  In one embodiment, the base is a polyester substrate, a polyimide substrate, a glass substrate, or a silica glass substrate.

  In one embodiment, the base is silicon carbide.

  In one embodiment, the part is silicon.

  In one embodiment, the component is a gallium nitride chip or an LED chip.

  In one embodiment, the light includes at least one of visible light, ultraviolet light, and infrared light.

  The structure according to the present invention includes a base, a component, and a conductive member, and at least one of the base and the component is transparent to light to be irradiated, and the base and the component are the conductive member. The base and the component are joined by irradiating the conductive member with light from at least one of the directions.

  The device according to the present invention comprises the above-described joining structure, and the component is an LED chip.

  The method for manufacturing a joined structure according to the present invention includes a step of forming a conductive member on at least one of a base and a component, a step of laminating the base and the component via the conductive member, and a permeable base or component. And joining the base and the component by irradiating the conductive member with light from the direction of. Since the conductive members are joined (sintered) by irradiating light, they can be joined (sintered) uniformly and the time required for joining (sintering) is short. Therefore, components can be mounted on the base in a short time.

It is a typical side view showing the 1st structure concerning the present invention. It is a typical side view showing the manufacturing method of the 1st structure concerning an embodiment of the present invention. It is a mimetic diagram showing the 2nd structure concerning the present invention. It is a typical side view showing the manufacturing method of the 2nd structure concerning an embodiment of the present invention. It is a schematic diagram which shows the manufacturing method of the 3rd structure which concerns on embodiment of this invention. It is a typical side view showing a manufacturing method of the 3rd structure concerning an embodiment of the present invention. It is a schematic diagram which shows the apparatus which concerns on this invention. It is a photograph which shows the 1st structure which concerns on 1st Embodiment of this invention. It is a photograph which shows the wiring using a silver flake paste. It is a photograph which shows the junction structure concerning a 3rd embodiment of the present invention which joined a PET substrate and a dummy chip. (A), (b) and (c) are photographs showing a bonded structure according to a third embodiment of the present invention in which a PET substrate and an LED chip are bonded. It is a graph which shows the relationship between the pulse voltage (acceleration voltage) and wiring resistivity which are irradiated based on this invention. It is a graph which shows the relationship between the irradiation time of the wavelength (300 nm-1000 nm) light to the joining structure which concerns on this invention, and the shear strength of a joining structure. (A) is a figure which shows the intensity | strength of a structure manufactured by the manufacturing method of the bonded structure which concerns on this invention, and a joint surface structure | tissue. (B) is a figure which shows a 1st structure. (A) has shown the light intensity distribution of Pulseforge, and the wavelength change of the light absorption rate of PET film. (B) is a photograph of the light source Pulseforge used for light irradiation.

  Embodiments of a bonding method according to the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments.

(First embodiment)
An embodiment of a first structure 100 according to the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram showing a first structure 100 according to the present invention. Hereinafter, the 1st structure 100 in which glass and glass are joined is explained.

  The first structure 100 includes a base 10, a component 30, and a conductive member 20. In the present embodiment, glass is used as the base 10 and the component 30. Alternatively, as the base 10 and the component 30, in addition to glass, silica glass, silicon carbide, or gallium nitride formed on silicon is used.

  The base 10 is transmissive to the irradiated light. The base 10 is transparent. The base 10 has a joint surface 41a and a non-joint surface 42a. The joining surface 41 a is a surface that joins the component 30. The non-joint surface 42a is located on the opposite side of the joint surface 41a.

  The component 30 is transmissive to the irradiated light. The component 30 is transparent. The component 30 has a bonding surface 41b and a non-bonding surface 42b. The joint surface 41 b is a surface that joins the base 10. The non-joint surface 42b is located on the opposite side of the joint surface 41b.

  The conductive member 20 is formed by a plating film, a vapor deposition process, and an etching foil film process.

  The base 10 and the component 30 are joined via the conductive member 20. The base 10 and the component 30 are joined by irradiating the conductive member 20 with light from the direction of the base 10 or the component 30 having transparency.

  With reference to FIG. 2, an embodiment of a method of manufacturing the first structure 100 according to the present invention will be described. FIG. 2 is a schematic side view showing the method for manufacturing the first structure 100 according to the embodiment of the present invention.

  First, as shown in FIG. 1A, a base 10 and a component 30 are prepared.

  Next, as shown in FIG. 1B, the conductive members 20 are formed on the base 10 and the component 30, respectively. The conductive member 20 is applied to the base 10 and the component 30 by performing plating treatment, vapor deposition treatment, and etching foil film treatment of the conductive member 20 on the respective joint surfaces (the joint surface 41a and the joint surface 41b) of the base 10 and the component 30. It is formed.

  Next, as shown in FIG. 1C, the base 10 and the component 30 are laminated via the conductive member 20a and the conductive member 20b. That is, the component 30 is placed on the base 10 so that the bonding surface 41a of the base 10 and the bonding surface 41b of the component 30 face each other. At this stage, the base 10 and the component 30 are merely stacked and separated. That is, the base 10 and the component 30 are not joined.

  Next, as shown in FIG. 1D, light 50 is irradiated. The light 50 is emitted from, for example, a high-power flash light source. The light 50 is, for example, visible light. The time for irradiating the light 50 is, for example, 1 minute. Irradiation with the light 50 may be performed in a room temperature environment. Since the component 30 is transmissive to the irradiated light, the irradiated light 50 passes through the component 30 and reaches the conductive member 20 (conductive member 20a and conductive member 20b). The conductive member 20 is sintered between the joining surfaces by the light reaching the conductive member 20. When the conductive member 20 is sintered, the base 10 and the component 30 are joined.

  As described above with reference to FIG. 1 and FIG. 2, the method for manufacturing the first structure 100 according to the present invention uses the conductive member 20 (the conductive member 20 a and the conductive member 20 b) as at least the base 10 and the component 30. The base 10 is formed by irradiating the conductive member 20 with light 50 from the direction of the base 10 or the component 30 having transparency and the step of forming the base 10 and the component 30 through the conductive member 20. And joining the components 30. Since the conductive member 20 is joined (sintered) by irradiating the light 50, the time required for joining (sintering) is short. Therefore, the component 30 can be mounted on the base 10 in a short time.

  Further, since the conductive member 20 is sintered by irradiating the light 50, a wide range can be sintered at a time. Therefore, the base 10 and the component 30 can be joined efficiently by sintering uniformly.

  Moreover, in the method of sintering the conductive member 20 by heating in a general heating furnace, a heat treatment at a high temperature of 200 ° C. or more is necessary. However, in the bonding method according to the present invention, the room temperature environment is used. The conductive member 20 can be sintered. Therefore, even if the base 10 or the component 30 has a low heat-resistant temperature, the base 10 and the component 30 can be joined.

  Moreover, in the manufacturing method of the 1st structure 100 which concerns on this invention, since the electrically-conductive member 20 is sintered by irradiating the light 50, a large-scale apparatus, such as a heating furnace, is not required. Therefore, the base 10 and the component 30 can be joined at a low cost.

(Second Embodiment)
An embodiment of the second structure 200 according to the present invention will be described with reference to FIG. FIG. 3 is a schematic diagram showing a second structure 200 according to the present invention. Hereinafter, a second structure 200 in which a polyester (PET) substrate (hereinafter referred to as a PET substrate) (base 10) and a semiconductor chip (component 30) are bonded will be described.

  The second structure 200 includes a base 10, a component 30, and conductive members (conductive member 20a and conductive member 20b). In this embodiment, the base 10 is a PET substrate. The component 30 is a semiconductor chip.

  The base 10 has translucency. The base 10 is transparent. The base 10 has a bonding surface 41 and a non-bonding surface 42. The joint surface 41 is a surface that joins the component 30. The non-joint surface 42 is located on the opposite side of the joint surface 41.

  Silver particles, copper, or nickel metal particles are dispersed in the conductive member 20. The particle-dispersed conductive member 20 is produced by mixing metal particles and a solvent such as alcohol to form a paste.

  The conductive member 20a is formed on the base 10 with an interval so as not to short-circuit with the conductive member 20b. One end of each of the conductive member 20a and the conductive member 20b is connected to an electrode (not shown) or a terminal (not shown) of another component.

  One end of the component 30 is in contact with the conductive member 20a. On the other hand, the other end of the component 30 is in contact with the conductive member 20b.

  With reference to FIG. 4, an embodiment of a method for manufacturing the second structure 200 according to the present invention will be described. FIG. 4 is a schematic side view showing a method for manufacturing the second structure 200 according to the embodiment of the present invention.

  First, as shown in FIG. 4A, a base 10 is prepared.

  Next, as shown in FIG. 4B, the conductive member 20 (conductive member 20 a and conductive member 20 b) is formed on the base 10. The conductive member 20 is formed (applied) on the base 10 so as to draw a predetermined pattern. In order to form the conductive member 20 on the base 10 so as to draw a predetermined pattern, the conductive member 20 is preferably formed (coated) on the base 10 by a printing method such as screen printing.

  Next, as shown in FIG. 4C, the base 10 and the component 30 are laminated via the conductive member 20a and the conductive member 20b. That is, the component 30 is placed so that one end is in contact with the conductive member 20a. On the other hand, the component 30 is placed so that the other end is in contact with the conductive member 20b. At this stage, the base 10 and the component 30 are merely stacked and separated. That is, the base 10 and the component 30 are not joined.

  Next, as shown in FIG. 4D, light 50 is irradiated. In this embodiment, when the component 30 does not have translucency, the light 50 is irradiated from the base 10 side (lower side in FIG. 4D) that is transparent to the irradiated light. Since the base 10 is transmissive to the irradiated light, the irradiated light 50 passes through the base 10 and reaches the conductive member 20a and the conductive member 20b. The conductive member 20 is joined (sintered) by the light reaching the conductive member 20a and the conductive member 20b. When the conductive member 20 is sintered, the base 10 and the component 30 are joined. At the same time, curing (curing) can be performed on a portion (wiring portion) that is not in contact with the component 30 of the conductive member 20a and the conductive member 20b.

  As described with reference to FIG. 4, the manufacturing method of the bonded structure according to the present invention can cure the wiring portion simultaneously with the process of bonding the base 10 and the component 30. Therefore, it is possible to reduce the process for mounting the components. As a result, the time required for mounting the components can be shortened.

  Further, as described above with reference to FIG. 2, in the method for manufacturing a bonded structure according to the present invention, the conductive member 20 can be sintered in a room temperature environment. Therefore, as shown in FIG. 4, even if the base 10 is a PET substrate having a low heat-resistant temperature, the component 30 can be bonded. As a result, the component 30 can be mounted on the flexible base 10 such as a PET substrate.

  Further, as described with reference to FIG. 4, in the process of joining the base 10 and the component 30, the conductive member is irradiated with light from the direction of the non-joint surface. Therefore, the conductive member 20 can be sintered even when the component 30 is not transmissive to the irradiated light.

(Third embodiment)
An embodiment of the third structure 300 according to the present invention will be described with reference to FIG. FIG. 5 is a schematic side view showing the method for manufacturing the third structure 300 according to the embodiment of the present invention. Hereinafter, the third structure 300 in which the PET substrate and the semiconductor chip are bonded via the pads (the first conductive member 21a and the first conductive member 21b) will be described.

  The third structure 300 includes the base 10, the component 30, the first conductive member (the first conductive member 21a and the first conductive member 21b), and the second conductive member (the second conductive member 22a and the second conductive member 22b). Prepare. In this embodiment, the base 10 is a PET substrate. The component 30 is an LED chip.

  The base 10 is transmissive to the irradiated light. The base 10 is transparent. The base 10 has a bonding surface 41 and a non-bonding surface 42. The joint surface 41 is a surface that joins the component 30. The non-joint surface 42 is located on the opposite side of the joint surface 41.

  The first conductive member 21a is formed on the base 10 with a gap so as not to short-circuit with the first conductive member 21b. The first conductive member 21a and the first conductive member 21b form a pad.

  The second conductive member 22a is connected to the first conductive member 21a. The second conductive member 22b is connected to the first conductive member 21b. The first conductive member contains a polymer. For example, at least one polymer is selected from polyethylene, epoxy, phenol, acrylic, urethane, polycarbonate, and silicone. The volume content of the polymer is 3% to 60%.

  One end of the component 30 is in contact with the first conductive member 21a. On the other hand, the other end of the component 30 is in contact with the first conductive member 21b.

  An embodiment of a method for manufacturing the third structure 300 according to the present invention will be described with reference to FIG. FIG. 6 is a schematic view showing a method for manufacturing the third structure 300 according to the embodiment of the present invention.

  First, as shown in FIG. 6A, a base 10 is prepared.

  Next, as shown in FIG. 6B, the first conductive members (the first conductive member 21 a and the first conductive member 21 b) are formed on the base 10. The first conductive member 21a and the first conductive member 21b are formed in a component bonding region A1 that indicates a region to be bonded to a component. The first conductive member 21a and the first conductive member 21b are formed on the base 10 with a gap therebetween.

  Next, as shown in FIG. 6C, second conductive members (second conductive member 22 a and second conductive member 22 b) are formed on the base 10. The second conductive member 22a and the second conductive member 22b are formed in the component non-joining region A2 that indicates a region that is not joined to the component. The second conductive member 22a is formed so as to be connected to the first conductive member 21a. The second conductive member 22b is formed so as to be connected to the first conductive member 21b.

  Next, as shown in FIG. 6D, the base 10 and the component 30 are stacked via the conductive member 21a and the conductive member 21b. That is, the component 30 is placed so that one end is in contact with the first conductive member 21a. On the other hand, the component 30 is placed so that the other end is in contact with the first conductive member 21b. At this stage, the base 10 and the component 30 are merely stacked and separated. That is, the base 10 and the component 30 are not joined.

  Next, as shown in FIG. 6E, light 50 is irradiated. In the present embodiment, when the component 30 is not transmissive to the irradiated light, light is transmitted from the base 10 side (lower side in FIG. 6E) that is transmissive to the irradiated light. 50 irradiates. Since the base 10 is transparent to the irradiated light, the irradiated light 50 passes through the base 10 and passes through the first conductive member 21a, the first conductive member 21b, the second conductive member 22a, and the second conductive member. 22b is reached. The conductive member 20 is sintered by the light reaching the first conductive member 21a, the first conductive member 21b, the second conductive member 22a, and the second conductive member 22b. When the conductive member 20 is sintered, the base 10 and the component 30 are joined. At the same time, the second conductive member 22a and the second conductive member 22b (wiring portion) can be cured (cured).

  As described with reference to FIG. 5 and FIG. 6, the method for manufacturing a joint structure according to the present invention includes the step of forming the first conductive member in the region to be joined to the component in the step of applying the conductive member to the base. And a step of forming the second conductive member in a non-bonded region that is not bonded to the component. The first conductive member contains a polymer. Therefore, the bondability between the base 10 and the component 30 is improved.

(apparatus)
An embodiment of an apparatus 400 according to the present invention will be described with reference to FIG. FIG. 7 is a schematic diagram showing an apparatus 400 according to the present invention.

  The apparatus 400 comprises the structure described with reference to FIG. Specifically, the apparatus 400 includes a base 10 and a first conductive member (first conductive member 21a, first conductive member 21b, first conductive member 21c, first conductive member 21d, first conductive member 21e, and first conductive member. 21f), a second conductive member (second conductive member 22a, second conductive member 22b, second conductive member 22c and second conductive member 22d) and a component (component 30a, component 30b and component 30c). The device 400 is used as a lighting device, for example.

  The components (component 30a, component 30b, and component 30c) are LED chips. The first conductive member 21a, the first conductive member 21c, and the first conductive member 21e form a pad, and are in contact with the anode (positive electrode) of the component 30a, the component 30a, and the component 30c, respectively. The first conductive member 21b, the first conductive member 21d, and the first conductive member 21f form a pad and are in contact with the cathodes (negative electrodes) of the component 30a, the component 30a, and the component 30c, respectively.

  The first conductive member 21a and the first conductive member 21b are formed on the base 10 with an interval so as not to short-circuit. The first conductive member 21c and the first conductive member 21d are formed on the base 10 with an interval so as not to short-circuit. The first conductive member 21e and the first conductive member 21f are formed on the base 10 with an interval so as not to short-circuit.

  The second conductive member 22a is connected to the first conductive member 21a. The second conductive member 22b is connected to the first conductive member 21b and the first conductive member 21c. The second conductive member 22c is connected to the first conductive member 21d and the first conductive member 21e. The second conductive member 22d is connected to the first conductive member 21f.

  By connecting one end of the second conductive member 22a to an electrode (not shown), connecting one end of the second conductive member 22d to a ground (not shown), and applying a voltage to the electrode, the device 400 is lit.

  Hereinafter, the present invention will be described more specifically with reference to examples. In addition, this invention is not limited at all by the Example.

[Example 1]
With reference to FIG. 8, the Example of the manufacturing method of the 1st structure 100 which concerns on this invention is described. FIG. 8 is a photograph showing the first structure 100 according to the first embodiment of the present invention.

  First, Ag / Ti is sputter metallized on two sheets of glass to form a film on the glass. Next, two pieces of sputter-metalized glass are bonded. Light is irradiated under conditions of 220 V, 1400 us, 500 times, 1.5 Hz. By being irradiated with light, Ag is sintered and the glass is bonded. As the light source, PulseForge made by NovaCentrix was used.

[Example 2]
With reference to FIG. 9 and FIG. 10, the Example of the manufacturing method of the 2nd structure 200 which concerns on this invention is described. FIG. 9 is a photograph showing wiring using silver flake paste. FIG. 10 is a photograph showing a third structure 300 according to the third embodiment of the present invention in which a PET substrate and a dummy chip are bonded.

  First, using a conductive adhesive (XA910: manufactured by Fujikura Kasei Co., Ltd.), two 2 mm × 2 mm pads with a gap of 1.5 mm were prepared on a PET substrate. Next, a dummy chip was arranged to bridge on the pad. After placing the dummy chip, the dummy chip was bonded by irradiating light from the back surface of the PET substrate under the conditions of voltage: 190 V, pulse time: 1800 us, number of pulses: 100 times, pulse frequency: 1.5 Hz. Next, silver flakes (C239: manufactured by Fukuda Metal Co., Ltd.) were dispersed in ethylene glycol (EG) to form a paste. The pasted ink was screen printed on a PET substrate with a thickness of 2 mm × 300 mm and a film thickness of 0.05 mm, wired from a conductive adhesive at the chip joint, voltage: 210 V, pulse time: 1600 μs, number of pulses: 150 times Then, light irradiation was performed under the condition of a pulse frequency: 1.5 Hz to produce a dummy chip bonding wiring. The shear strength of this example was 45.67N. As shown in FIG. 10, even when the PET substrate was bent, the dummy chip was not peeled off.

[Example 3]
With reference to FIG. 11, the Example of the manufacturing method of the 3rd structure 300 which concerns on this invention is described. FIGS. 11A, 11B, and 11C are photographs showing a third structure 300 according to the third embodiment of the present invention in which a PET substrate and an LED chip are bonded.

  First, a conductive adhesive (XA910: manufactured by Fujikura Kasei Co., Ltd.) was used, and two 2 mm × 2 mm pads each having a gap of 1.5 mm were prepared on a PET substrate. Next, a dummy chip was arranged to bridge on the pad. After placing the dummy chip, the dummy chip was bonded by irradiating light from the back surface of the PET substrate under the conditions of voltage: 190 V, pulse time: 1800 us, number of pulses: 100 times, pulse frequency: 1.5 Hz. Next, silver flakes (C239: manufactured by Fukuda Metal Co., Ltd.) were dispersed in ethylene glycol (EG) to form a paste. The pasted ink was screen printed on a PET substrate with a thickness of 2 mm × 300 mm and a film thickness of 0.05 mm, wired from a conductive adhesive at the chip joint, voltage: 210 V, pulse time: 1600 μs, number of pulses: 150 times Then, light irradiation was performed under the condition of pulse frequency: 1.5 Hz to produce a dummy chip bonding wiring. As shown in FIG. 11A, even when the PET substrate was bent, the LED chip was not peeled off. Furthermore, as shown in FIG. 11B and FIG. 11C, the LED could be turned on even when the PET substrate was bent.

[Relationship between wavelength of light and wiring resistivity]
FIG. 12 is a graph showing the relationship between the pulse voltage (acceleration voltage) applied to the junction structure according to the present invention and the wiring resistivity. The X axis represents the pulse generation voltage. The Y axis indicates the wiring resistivity (volume resistivity). The waveform changes depending on the pulse voltage, and the higher the voltage, the greater the total irradiation amount. The wavelength of light is preferably 300 nm to 1000 nm. Moreover, since the Ag wiring can reduce the wiring resistivity more than the Cu wiring and the Ni wiring, it is preferable to use the Ag wiring for the conductive member 20. In addition, the longer the pulse time of the light to be irradiated, the smaller the wiring resistivity can be. Therefore, it is preferable that the pulse time of the light to be irradiated is long enough not to damage the substrate.

[Relationship between irradiation time and bonding strength]
FIG. 13 is a graph showing the relationship between the irradiation time of light having a wavelength (300 nm to 1000 nm) and the shear strength of the bonded structure to the bonded structure according to the present invention. The X axis indicates the irradiation time of light having a wavelength (300 nm to 1000 nm). Under any condition, there is an optimum value at which the bonding strength is maximum with respect to the acceleration voltage. For example, when the pulse time is 1200 μsec, the bonding strength becomes maximum when the acceleration voltage is 180V. Further, when the pulse time is 1400 μsec, the bonding strength becomes maximum when the acceleration voltage is 190V. Further, when the pulse time is 1600 μsec, the bonding strength becomes maximum when the acceleration voltage is 220V. The Y axis indicates the shear strength. The irradiation time of light having a wavelength of light (300 nm to 1000 nm) is preferably 1000 μs to 1600 μs, but it is preferably 150 V to 300 V in relation to the acceleration voltage.

  Fig.14 (a) is a figure which shows the intensity | strength of a structure manufactured by the manufacturing method of the junction structure based on this invention, and a joint surface structure | tissue. FIG. 14B is a diagram illustrating the first structure 100. When the structure was SiC / Cu, the bonding strength was 20 MPa. Further, when the structure was GaN / Si / Cu, the bonding strength was 10 MPa. Moreover, when the structure was silicon glass / silicon glass, the bonding strength was 25 MPa. When the structure was glass / glass, the bonding strength was 25 MPa. From the structures (SiC / Cu, GaN / Si / Cu, silica glass / silica glass, and glass / glass) manufactured by the method for manufacturing a bonded structure according to the present invention, good bonding strength measurement results are obtained. It was.

In conventional bonding and wiring techniques, metal particles are sintered by heating to sinter metal particles, such as silver and gold. Nanoparticles can also be sintered at room temperature, but are usually sintered in a temperature range of 150 ° C or higher. As a result, a low resistivity of the order of 10 ⁻⁶ Ωcm is obtained. Silver micrometer-sized flake particles may be specifically sintered at around 200 ° C., but this is not general. However, in the case of copper, since it oxidizes at the time of sintering, a vacuum or a reducing atmosphere is required at a temperature of 200 ° C. or higher, and nickel has a drawback that the resistance value is higher. In any case, since PET and the like are not kept at a temperature of 150 ° C. or higher, it is difficult to form wiring by simple heating.

  On the other hand, in the photo-sintering of the present technology, PET, PEN (polyethylene naphthalate) and PEN (polyethylene naphthalate) which are irradiated with intense light in a pulse and only the portion that absorbs light is heated in a short time and transmits light. Polymers such as PI (Polyimide), glass, silicon carbide, gallium nitride and the like hardly absorb light in the range of 300 nm to 1000 nm and are hardly heated. FIG. 15A shows the change in wavelength of the light intensity distribution of Pulseforge and the light absorption rate of the PET film. FIG. 15B is a photograph of the light source Pulseforge used for light irradiation. In the light irradiation by Pulseforge, strong light is generated in the wavelength range of 380 nm to 1000 nm, but the absorption of light having a wavelength of 300 nm or more rapidly decreases in PET. For this reason, PET as a base material is not heated, only a desired part is heated for a short time, sintering proceeds between particles and between joint surfaces, and in the case of copper and nickel, the evaporation of the solvent and the formation of the atmosphere are remarkable. Will not oxidize.

  The present invention is not limited to the above-described embodiment, and can be implemented in various modes without departing from the gist thereof. For example, the following modifications are possible.

  (1) In the joining method described with reference to FIGS. 1 to 7, the conductive member 20 is sintered by irradiating visible light, but the light applied to the conductive member 20 is not limited to visible light. For example, ultraviolet light and infrared light may be used (see FIG. 12). For example, when the base 10 is silicon, it is preferable to use it as light for irradiating the conductive member with infrared light that easily transmits through silicon.

  (2) In the bonding method described with reference to FIG. 1, glass is used as the base 10 and the component 30, but silicon carbide (SiC) or gallium nitride (GaN) formed on silicon or sapphire is used. be able to. Since silicon carbide and the like have translucency, the method for manufacturing a bonded structure according to the present invention can be suitably applied.

  (3) In the joining method described with reference to FIG. 6, the first conductive member (first conductive member 21a and first conductive member 21b) is formed on the base 10, and then the second conductive member (second conductive member 22a). The second conductive member 22b) is formed on the base 10, but the present invention is not limited to this. For example, after the second conductive members (second conductive member 22a and second conductive member 22b) are formed on the base 10, the first conductive members (first conductive member 21a and first conductive member 21b) are formed on the base 10. May be.

  (4) In the joining method described with reference to FIG. 6, the first conductive member (first conductive member 21a and first conductive member 21b) and second conductive member (second conductive member 22a and second conductive member 22b). Is formed on the base 10 and then the components 30 are laminated and irradiated with light for bonding. However, the present invention is not limited to this. For example, light irradiation is performed after the second conductive member is formed on the base 10. Thereafter, the first conductive members (the first conductive member 21a and the first conductive member 21b) are formed on the base 10, and then the component 30 is laminated. Then, bonding may be performed by irradiating light. In addition, when irradiating light to a 2nd conductive member, you may irradiate light from the upper surface of a 2nd conductive member.

  (5) In the joining method described with reference to FIG. 2, the base 10 and the component 30 are joined, but the present invention is not limited to this. The base 10 and the base 10 may be joined.

  According to the method for manufacturing a bonded structure of the present invention, the base and the component can be bonded in a short time.

10 Base 20, 20a, 20b Conductive member 21a, 21b, 21c, 21d, 21e, 21f First conductive member 22a, 22b, 22c, 22d Second conductive member 30 Component 41 Joint surface 42 Non-joint surface 50 Light 100 First joint Body 200 second joined body 300 third joined body 400 device

Claims (12)

A method of manufacturing a joint structure including a base and a component, at least one of which is transparent to the light to be irradiated,
Forming a conductive member on at least one of the base and the component;
Laminating the base and the component via the conductive member;
Joining the base and the component by irradiating the conductive member with the light from the direction of the transparent base or the component. The base is transparent to the light to be irradiated;
The base has a joint surface that joins the component via the conductive member, and a non-joint surface opposite to the joint surface;
In the step of joining the base and the component,
The method for manufacturing a joined structure according to claim 1, wherein the light is applied to the conductive member from a direction of the non-joint surface.   The method for manufacturing a joined structure according to claim 1, wherein silver, copper, or nickel particles are dispersed in the conductive member. In the step of forming the conductive member,
The manufacturing method of the joining structure of Claim 1 or Claim 2 which forms the said electrically-conductive member by plating process, a vapor deposition process, or an etching foil film process. The step of forming the conductive member includes
Forming a first conductive member in a bonding region to be bonded to the component;
Forming a second conductive member in a non-bonded region that is not bonded to the component,
The said 1st electrically-conductive member is a manufacturing method of the junction structure of any one of Claims 1-4 containing a polymer or glass.   The said base is a manufacturing method of the junction structure of any one of Claims 1-5 which is a polyester substrate, a polyimide substrate, a glass substrate, or a silica glass substrate.   The method for manufacturing a bonded structure according to claim 1, wherein the base is silicon carbide.   The method for manufacturing a joint structure according to claim 1, wherein the component is silicon.   The method of manufacturing a bonded structure according to any one of claims 1 to 8, wherein the component is a gallium nitride chip or an LED chip.   The method for manufacturing a bonded structure according to any one of claims 1 to 9, wherein the light includes at least one of visible light, ultraviolet light, and infrared light. A base, a component, and a conductive member;
At least one of the base and the component is transparent to the light to be irradiated;
The base and the component are laminated via the conductive member,
A structure in which the base and the component are joined by irradiating the conductive member with light from at least one direction. A joined structure according to claim 11,
The device, wherein the component is an LED chip.