JP2014239582A - Voltage detector - Google Patents
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Abstract
Description
本発明は、電圧検出装置に関する。 The present invention relates to a voltage detection device.
下記特許文献１には、容量調整時の発熱量を適切に制御して制御基板を過熱することなく短時間で容量調整を実行できる二次電池の容量調整方法が開示されている。該容量調整方法は、複数の二次電池１４と、複数の二次電池を制御する電子部品１５１，１５５および各二次電池の容量調整用抵抗１５２とが実装された制御基板１５とを有する組電池１の各二次電池の容量を電圧値により調整する容量調整方法であって、制御基板１５の容量調整前の実温度Ｔｒと限界温度Ｔｍとの温度差を求めるステップと、各二次電池の容量調整量の総和を求めるステップと、温度差及び容量調整量の総和に基づいて容量調整用抵抗を制御し、各二次電池の容量を調整するステップとを有する。 Patent Document 1 listed below discloses a secondary battery capacity adjustment method capable of performing capacity adjustment in a short time without overheating the control board by appropriately controlling the amount of heat generated during capacity adjustment. The capacity adjustment method includes a plurality of secondary batteries 14, and a control board 15 on which electronic parts 151 and 155 for controlling the plurality of secondary batteries and capacity adjustment resistors 152 of the respective secondary batteries are mounted. A capacity adjustment method for adjusting the capacity of each secondary battery of the battery 1 by a voltage value, the step of obtaining a temperature difference between the actual temperature Tr and the limit temperature Tm before capacity adjustment of the control board 15, and each secondary battery And a step of adjusting the capacity of each secondary battery by controlling a capacity adjustment resistor based on the sum of the temperature difference and the capacity adjustment amount.
ところで、上記従来技術では、温度制御に必要な制御基板１５の実 温度Ｔｒを測定するために温度センサを設ける必要があるが、該温度センサを設けることによって部品点数が増えてしまうという問題があった。 By the way, in the above prior art, it is necessary to provide a temperature sensor in order to measure the actual temperature Tr of the control board 15 necessary for temperature control. However, the provision of the temperature sensor increases the number of parts. It was.
本発明は、上述した事情に鑑みてなされたものであり、温度制御のための温度センサを設けないことによって部品点数を減らすことを目的とする。 The present invention has been made in view of the above-described circumstances, and an object thereof is to reduce the number of parts by not providing a temperature sensor for temperature control.
上記目的を達成するために、本発明では、第１の解決手段として、直列に接続されたスイッチング素子及び抵抗器からなり、バッテリを構成する複数の電池セル各々に並列に接続される放電回路と、各電池セルの電圧を検出する電圧検出回路とを具備する電圧検出装置であって、内部温度が所定の制限温度を超えないように前記放電回路のスイッチング素子のオン回数を変化させる制御手段を具備する、という手段を採用する。 In order to achieve the above object, according to the present invention, as a first solution, a discharge circuit including a switching element and a resistor connected in series and connected in parallel to each of a plurality of battery cells constituting a battery; And a voltage detection device comprising a voltage detection circuit for detecting the voltage of each battery cell, the control means for changing the number of times the switching element of the discharge circuit is turned on so that the internal temperature does not exceed a predetermined limit temperature. The means of having is adopted.
本発明では、第２の解決手段として、上記第１の解決手段において、前記電池セルの電圧を放電回路のインピーダンスによって除算した値に１０００を乗算した値を第１の放電電流値として算出し、該第１の放電電流値に１周期におけるオン期間の割合を乗算した値を第２の放電電流値として算出し、前記放電回路に基づいて予め決められた電流リミット値を第２の放電電流値によって乗算した値に１００を乗算した値をオン回数割合値として算出する演算手段をさらに具備し、前記オン回数割合値に基づいて前記放電回路のスイッチング素子の所定時間内におけるオン回数を変化させる、という手段を採用する。 In the present invention, as the second solution means, in the first solution means, a value obtained by multiplying a value obtained by dividing the voltage of the battery cell by the impedance of the discharge circuit by 1000 is calculated as a first discharge current value. A value obtained by multiplying the first discharge current value by the ratio of the ON period in one cycle is calculated as a second discharge current value, and a current limit value determined in advance based on the discharge circuit is set as the second discharge current value. Further comprising an arithmetic means for calculating a value obtained by multiplying the value multiplied by 100 as an ON frequency ratio value, and changing the ON frequency within a predetermined time of the switching element of the discharge circuit based on the ON frequency ratio value. Adopt the means.
本発明によれば、内部温度が所定の制限温度を超えないように放電回路のスイッチング素子のオン回数を変化させる。このように本発明は、温度制御に温度センサを必要としないので、温度センサを削減して部品点数を減らすことができる。 According to the present invention, the number of ON times of the switching elements of the discharge circuit is changed so that the internal temperature does not exceed a predetermined limit temperature. As described above, the present invention does not require a temperature sensor for temperature control. Therefore, the number of parts can be reduced by reducing the temperature sensor.
以下、図面を参照して、本発明の実施形態について説明する。
本実施形態に係る電圧検出装置Ａは、電気自動車（ＥＶ：Electric Vehicle）あるいはハイブリッド自動車（ＨＶ：Hybrid Vehicle）等の移動車両に搭載され、バッテリＢを構成する各電池セルＣ１〜Ｃｎの電圧状態を監視するものであり、図１に示すように、放電回路Ｈ１〜Ｈｎ、フィルタ回路Ｆ１〜Ｆｎ、電圧検出回路Ｄ及びマイコンＭを備える。これら放電回路Ｈ１〜Ｈｎ、フィルタ回路Ｆ１〜Ｆｎ、電圧検出回路Ｄ及びマイコンＭは、図示しない基板上に実装されている。なお、電圧検出回路Ｄ及びマイコンＭは、本実施形態における電圧検出手段を構成する。なお、マイコンＭは、本実施形態における制御手段である。
Embodiments of the present invention will be described below with reference to the drawings.
The voltage detection apparatus A according to the present embodiment is mounted on a moving vehicle such as an electric vehicle (EV) or a hybrid vehicle (HV), and voltage states of the battery cells C1 to Cn constituting the battery B. As shown in FIG. 1, discharge circuits H1 to Hn, filter circuits F1 to Fn, a voltage detection circuit D, and a microcomputer M are provided. The discharge circuits H1 to Hn, the filter circuits F1 to Fn, the voltage detection circuit D, and the microcomputer M are mounted on a substrate (not shown). Note that the voltage detection circuit D and the microcomputer M constitute voltage detection means in the present embodiment. The microcomputer M is a control unit in this embodiment.
放電回路Ｈ１〜Ｈｎは、各電池セルＣ１〜Ｃｎに並列に接続され、過充電状態である電池セルＣ１〜ＣｎをマイコンＭから入力される制御信号に基づいて放電させるものである。このような放電回路Ｈ１〜Ｈｎは、図１に示すように、スイッチング素子Ｓ１〜Ｓｎ及び第１の抵抗器Ｒａ１〜Ｒａｎから構成されている。なお、放電回路Ｈ１〜Ｈｎは同じ構成であるので、放電回路Ｈ１のスイッチング素子Ｓ１及び抵抗器Ｒａ１についてのみ説明し、放電回路Ｈ２〜Ｈｎのスイッチング素子Ｓ２〜Ｓｎ及び第１の抵抗器Ｒａ２〜Ｒａｎについては説明を省略する。 The discharge circuits H1 to Hn are connected in parallel to the battery cells C1 to Cn, and discharge the battery cells C1 to Cn in an overcharged state based on a control signal input from the microcomputer M. As shown in FIG. 1, such discharge circuits H1 to Hn are composed of switching elements S1 to Sn and first resistors Ra1 to Ran. Since the discharge circuits H1 to Hn have the same configuration, only the switching element S1 and the resistor Ra1 of the discharge circuit H1 will be described, and the switching elements S2 to Sn and the first resistors Ra2 to Ran of the discharge circuits H2 to Hn. Description of is omitted.
スイッチング素子Ｓ１は、例えば、バイポーラトランジスタであり、ベース端子がマイコンＭに接続され、エミッタ端子が電池セルＣ１の正極に接続され、コレクタ端子が第１の抵抗器Ｒａ１の一端に接続されている。このようなスイッチング素子Ｓ１は、マイコンＭから電圧値がハイレベルである制御信号がベース端子に入力されるとオン状態となって、過充電状態である電池セルＣ１の電力を第１の抵抗器Ｒａ１に放電する。一方、スイッチング素子Ｓ１は、電圧値がローレベルである制御信号がベース端子に入力されると、オフ状態となって、電池セルＣ１から第１の抵抗器Ｒａ１への放電を停止する。 The switching element S1 is, for example, a bipolar transistor, the base terminal is connected to the microcomputer M, the emitter terminal is connected to the positive electrode of the battery cell C1, and the collector terminal is connected to one end of the first resistor Ra1. The switching element S1 is turned on when a control signal having a high voltage value is input from the microcomputer M to the base terminal, and the power of the battery cell C1 in the overcharged state is supplied to the first resistor. Discharge to Ra1. On the other hand, when a control signal having a low voltage value is input to the base terminal, the switching element S1 is turned off and stops discharging from the battery cell C1 to the first resistor Ra1.
また、スイッチング素子Ｓ１は、バイポーラトランジスタ以外にも、例えばＦＥＴトランジスタ（Field Effect Transistor：電界効果トランジスタ）やＩＧＢＴ（Insulated Gate Bipolar Transistor：絶縁ゲートバイポーラトランジスタ）であってもよい。 In addition to the bipolar transistor, the switching element S1 may be, for example, an FET transistor (Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor).
第１の抵抗器Ｒａ１は、一端がスイッチング素子Ｓ１のコレクタ端子に接続され、他端が電池セルＣ１の負極に接続されている。このような第１の抵抗器Ｒａ１は、スイッチング素子Ｓ１がオン状態となると、電池セルＣ１から電力が入力され、該電力を熱エネルギーに変換する、つまり発熱する。 One end of the first resistor Ra1 is connected to the collector terminal of the switching element S1, and the other end is connected to the negative electrode of the battery cell C1. When the switching element S1 is turned on, such first resistor Ra1 receives power from the battery cell C1 and converts the power into heat energy, that is, generates heat.
フィルタ回路Ｆ１〜Ｆｎは、各電池セルＣ１〜Ｃｎから出力される電圧に含まれるノイズを除去するローパスフィルタ回路であり、各電池セルＣ１〜Ｃｎと各電圧検出回路Ｄとの間に各々設けられている。このようなフィルタ回路Ｆ１〜Ｆｎは、図１に示すように、第２の抵抗器Ｒｂ１〜Ｒｂｎ及びコンデンサＣｄ１〜Ｃｄｎから構成されている。 The filter circuits F1 to Fn are low-pass filter circuits that remove noise included in the voltages output from the battery cells C1 to Cn, and are provided between the battery cells C1 to Cn and the voltage detection circuits D, respectively. ing. Such filter circuits F1 to Fn are composed of second resistors Rb1 to Rbn and capacitors Cd1 to Cdn, as shown in FIG.
なお、フィルタ回路Ｆ１〜Ｆｎは同じ構成であるので、フィルタ回路Ｆ１の第２の抵抗器Ｒｂ１及びコンデンサＣｄ１についてのみ説明し、フィルタ回路Ｆ２〜Ｆｎの第２の抵抗器Ｒｂ２〜Ｒｂｎ及びコンデンサＣｄ２〜Ｃｄｎについては説明を省略する。 Since the filter circuits F1 to Fn have the same configuration, only the second resistor Rb1 and the capacitor Cd1 of the filter circuit F1 will be described, and the second resistors Rb2 to Rbn and the capacitor Cd2 of the filter circuits F2 to Fn are described. Description of Cdn is omitted.
第２の抵抗器Ｒｂ１は、一端がスイッチング素子Ｓ１のエミッタ端子及び電池セルＣ１の正極に接続され、他端がコンデンサＣｄ１の一端及び電圧検出回路Ｄに設けられた複数の内の１つの入力端子に接続されている。
コンデンサＣｄ１は、一端が第２の抵抗器Ｒｂ１の他端及び電圧検出回路Ｄの１つの入力端子に接続され、他端がグランドに接続されている。
The second resistor Rb1 has one end connected to the emitter terminal of the switching element S1 and the positive electrode of the battery cell C1, and the other end connected to one end of the capacitor Cd1 and one input terminal of the voltage detection circuit D. It is connected to the.
The capacitor Cd1 has one end connected to the other end of the second resistor Rb1 and one input terminal of the voltage detection circuit D, and the other end connected to the ground.
電圧検出回路Ｄは、各電池セルＣの電圧を検出し、その検出結果をデジタルデータ（電圧検出データ）に変換するＡ／Ｄ変換機能やマイコンＭとの通信機能を有する専用のＩＣチップである。このような電圧検出回路Ｄは、高電圧（例えば６０Ｖ）の電力によって稼働可能であり、低電圧（例えば５Ｖ）で稼動可能なマイコンＭとフォトカプラ等の絶縁素子を介して接続されることによって、マイコンＭと電気的に絶縁されると共に通信可能に接続される。 The voltage detection circuit D is a dedicated IC chip having an A / D conversion function for detecting the voltage of each battery cell C and converting the detection result into digital data (voltage detection data) and a communication function with the microcomputer M. . Such a voltage detection circuit D can be operated by a high voltage (for example, 60V) power, and is connected to the microcomputer M that can operate at a low voltage (for example, 5V) via an insulating element such as a photocoupler. Are electrically insulated from the microcomputer M and are communicably connected.
マイコンＭは、ＣＰＵ（Central Processing Unit）、ＲＯＭ（Read Only Memory）、ＲＡＭ（Random Access Memory）及び電気的に相互接続された各部と各種信号の送受信を行うインターフェイス回路等から構成されたＩＣチップであり、上述した絶縁素子を介して電圧検出回路Ｄと通信可能に接続されている。 The microcomputer M is an IC chip composed of a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and an interface circuit that transmits and receives various signals to / from each electrically connected part. Yes, and connected to the voltage detection circuit D via the above-described insulating element.
このマイコンＭは、上記ＲＯＭに記憶された各種演算制御プログラムに基づいて各種の演算処理を行うと共に各部と通信を行うことにより電圧検出装置Ａの全体動作を制御する。詳細については後述するが、マイコンＭは、実装基板上の温度が制限温度（例えば１２０度）を超えないように、スイッチング素子Ｓ１〜Ｓｎのオン回数を変化させる。 The microcomputer M controls various operations of the voltage detection device A by performing various arithmetic processes based on various arithmetic control programs stored in the ROM and communicating with each unit. Although details will be described later, the microcomputer M changes the number of ON times of the switching elements S1 to Sn so that the temperature on the mounting substrate does not exceed the limit temperature (for example, 120 degrees).
次に、このように構成された本電圧検出装置Ａの動作について図２及び図３を参照して説明する。
マイコンＭは、所定の間隔でオン回数割合値を算出し、該オン回数割合値に基づいて放電回路Ｈ１〜Ｈｎのスイッチング素子Ｓ１〜Ｓｎの所定時間（例えば１５００ｍｓ）内におけるオン回数を変化させる。
具体的には、まず、マイコンＭは、以下に示す式（１）に基づいて第１の放電電流値を算出する。
第１の放電電流値(mA)＝セル電圧値(V)÷放電インピーダンス(Ω)×1000…(１)
Next, the operation of the voltage detection apparatus A configured as described above will be described with reference to FIGS.
The microcomputer M calculates the ON frequency ratio value at a predetermined interval, and changes the ON frequency within a predetermined time (for example, 1500 ms) of the switching elements S1 to Sn of the discharge circuits H1 to Hn based on the ON frequency ratio value.
Specifically, first, the microcomputer M calculates a first discharge current value based on the following equation (1).
First discharge current value (mA) = cell voltage value (V) ÷ discharge impedance (Ω) x 1000 ... (1)
上記セル電圧値とは、電池セルＣ１〜Ｃｎの電圧値である。また、上記放電インピーダンスとは、放電回路Ｈ１〜Ｈｎにおけるインピーダンスである。つまり、マイコンＭは、電池セルＣ１〜Ｃｎの電圧値を放電回路Ｈ１〜Ｈｎにおけるインピーダンスで除算した値に「１０００」を乗算することによって第１の放電電流値を算出する。このように算出された第１の放電電流値は、スイッチング素子Ｓ１〜Ｓｎがオン状態である場合に、放電回路Ｈ１〜Ｈｎによって放電される電流値のピークを示している。 The cell voltage value is a voltage value of the battery cells C1 to Cn. The discharge impedance is an impedance in the discharge circuits H1 to Hn. That is, the microcomputer M calculates the first discharge current value by multiplying the value obtained by dividing the voltage value of the battery cells C1 to Cn by the impedance in the discharge circuits H1 to Hn by “1000”. The first discharge current value calculated in this way indicates the peak of the current value discharged by the discharge circuits H1 to Hn when the switching elements S1 to Sn are in the on state.
続いて、マイコンＭは、以下に示す式（２）に基づいて第２の放電電流値を算出する。
第２の放電電流値(mA)＝第１の放電電流値(mA)×オン比…(２)
Subsequently, the microcomputer M calculates a second discharge current value based on the following equation (2).
Second discharge current value (mA) = first discharge current value (mA) × on ratio (2)
上記オン比とは、図２（ａ）に示すように、スイッチング素子Ｓ１〜Ｓｎのスイッチングの１周期（オン期間＋オフ期間）におけるオン期間の割合である。つまり、マイコンＭは、第１の放電電流値をスイッチング素子Ｓ１〜Ｓｎのスイッチングの１周期におけるオン期間の割合で乗算することによって第２の放電電流値を算出する。このように算出された第２の放電電流値は、１周期あたりの放電回路Ｈ１〜Ｈｎによって放電される電流の平均値を示している。 As shown in FIG. 2A, the on ratio is a ratio of an on period in one cycle (on period + off period) of switching of the switching elements S1 to Sn. That is, the microcomputer M calculates the second discharge current value by multiplying the first discharge current value by the ratio of the on period in one switching cycle of the switching elements S1 to Sn. The second discharge current value calculated in this manner indicates an average value of currents discharged by the discharge circuits H1 to Hn per cycle.
続いて、マイコンＭは、以下に示す式（３）に基づいてオン回数割合値を算出する。
オン回数割合値(%)＝電流リミット値(mA)÷第２の放電電流値(mA)×100…(３)
Subsequently, the microcomputer M calculates the ON number ratio value based on the following formula (3).
ON frequency ratio value (%) = current limit value (mA) ÷ second discharge current value (mA) x 100 ... (3)
上記電流リミット値とは、スイッチング素子Ｓ１〜Ｓｎを１回オン状態にして放電回路Ｈ１〜Ｈｎにより放電した場合、実装基板上の温度が制限温度（例えば１２０度）を超えない電流の限界値である。つまり、マイコンＭは、電流リミット値を第２の放電電流値によって除算した値に１００を乗算することによってオン回数割合値を算出する。 The current limit value is a current limit value at which the temperature on the mounting substrate does not exceed the limit temperature (for example, 120 degrees) when the switching elements S1 to Sn are turned on once and discharged by the discharge circuits H1 to Hn. is there. That is, the microcomputer M calculates the ON number ratio value by multiplying the value obtained by dividing the current limit value by the second discharge current value by 100.
そして、マイコンＭは、このようにして算出したオン回数割合値に基づいて放電回路Ｈ１〜Ｈｎのスイッチング素子Ｓ１〜Ｓｎの所定時間内におけるオン回数を変化させる。例えば、マイコンＭは、オン回数割合値が「１００」％から「７５」％に変化した場合、図２（ｂ）に示すようにスイッチング素子Ｓ１〜Ｓｎをオン状態にする回数を減らす。 Then, the microcomputer M changes the number of ON times within a predetermined time of the switching elements S1 to Sn of the discharge circuits H1 to Hn based on the ON number ratio value thus calculated. For example, when the ON frequency ratio value changes from “100”% to “75”%, the microcomputer M reduces the number of times that the switching elements S1 to Sn are turned on as shown in FIG.
具体的には、１５００ｍｓにおいてスイッチング素子Ｓ１〜Ｓｎを７５回オン状態にすることを、オン回数割合値が「１００」％であるとすれば、オン回数割合値が「７５」％となった場合には、１５００ｍｓにおいてスイッチング素子Ｓ１〜Ｓｎを５６回オン状態にする。なお、オン回数割合値から算出されるスイッチング素子Ｓ１〜Ｓｎのオン回数の小数点以下については切り捨てる。 Specifically, when the switching elements S1 to Sn are turned on 75 times in 1500 ms, and the ON frequency ratio value is “100”%, the ON frequency ratio value is “75”%. The switching elements S1 to Sn are turned on 56 times at 1500 ms. Note that the numbers after the decimal point of the number of ON times of the switching elements S1 to Sn calculated from the ON number rate value are rounded down.
また、オン回数割合値の最大値については「１００」％に設定されている。つまり、マイコンＭは、上記式(３)を演算した結果、オン回数割合値が「１００」％を超えた場合には、オン回数割合値を「１００」％とする。 Further, the maximum value of the ON number ratio value is set to “100”%. That is, when the microcomputer M calculates the above expression (3) and the ON count ratio value exceeds “100”%, the ON count ratio value is set to “100”%.
図３（ｂ）は、セル電圧値と、第１の放電電流値との関係を示すグラフである。なお、図３（ｂ）には、３つの異なる放電インピーダンスｍａｘ、ｍｉｄ、ｍｉｎに応じたセル電圧値と、第１の放電電流値との関係を示している。 FIG. 3B is a graph showing the relationship between the cell voltage value and the first discharge current value. FIG. 3B shows the relationship between the cell voltage value corresponding to three different discharge impedances max, mid, and min and the first discharge current value.
この結果、図３に示すように、放電回路Ｈ１〜Ｈｎによって放電される電流が電流リミット値を超えないようにできる。したがって、実装基板上の温度が制限温度（例えば１２０度）を超えない。なお、図３は、セル電圧値と、第１の放電電流値との関係を示すグラフである。また、図３は、３つの異なる放電インピーダンスｍａｘ、ｍｉｄ、ｍｉｎに応じたセル電圧値と、第１の放電電流値との関係を示している。 As a result, as shown in FIG. 3, the current discharged by the discharge circuits H1 to Hn can be prevented from exceeding the current limit value. Therefore, the temperature on the mounting substrate does not exceed the limit temperature (for example, 120 degrees). FIG. 3 is a graph showing the relationship between the cell voltage value and the first discharge current value. FIG. 3 shows the relationship between the cell voltage value corresponding to three different discharge impedances max, mid, and min and the first discharge current value.
このような本実施形態によれば、実装基板上の温度が所定の制限温度を超えないように放電回路Ｈ１〜Ｈｎのスイッチング素子Ｓ１〜Ｓｎのオン回数を変化させる。このように本実施形態は、温度制御に温度センサを必要としないので、温度センサを削減して部品点数を減らすことができる。 According to this embodiment, the number of times of switching elements S1 to Sn of the discharge circuits H1 to Hn is changed so that the temperature on the mounting board does not exceed a predetermined limit temperature. Thus, since this embodiment does not require a temperature sensor for temperature control, it can reduce a number of parts by reducing a temperature sensor.
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく、例えば以下のような変形が考えられる。
上記実施形態では、上記式(１)、(２) 、(３)を用いてオン回数割合値を算出し、該オン回数割合値に基づいて放電回路Ｈ１〜Ｈｎのスイッチング素子Ｓ１〜Ｓｎの所定時間内におけるオン回数を変化させることで、実装基板上の温度が制限温度（例えば１２０度）を超えないようにしたが、本発明これに限定されない。例えば、マイコンＭは、セル電圧値に応じたオン回数割合値が登録されたテーブルを予め記憶し、該テーブルに基づいてオン回数割合値を算出し、該オン回数割合値に基づいて放電回路Ｈ１〜Ｈｎのスイッチング素子Ｓ１〜Ｓｎの所定時間内におけるオン回数を変化させるようにしてもよい。
As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, For example, the following modifications can be considered.
In the above embodiment, the ON frequency ratio value is calculated using the above formulas (1), (2), and (3), and the switching elements S1 to Sn of the discharge circuits H1 to Hn are determined based on the ON frequency ratio value. Although the temperature on the mounting substrate is prevented from exceeding the limit temperature (for example, 120 degrees) by changing the number of times of ON in the time, the present invention is not limited to this. For example, the microcomputer M stores in advance a table in which the ON frequency ratio value corresponding to the cell voltage value is registered, calculates the ON frequency ratio value based on the table, and discharge circuit H1 based on the ON frequency ratio value. The number of ON times within a predetermined time of the switching elements S1 to Sn of .about.Hn may be changed.
Ａ…電圧検出装置、Ｂ…バッテリ、Ｃ１〜Ｃｎ…電池セル、Ｈ１〜Ｈｎ…放電回路、Ｆ１〜Ｆｎ…フィルタ回路、Ｄ…電圧検出回路、Ｍ…マイコン（制御手段）、Ｓ１〜Ｓｎ…スイッチング素子、Ｒａ１〜Ｒａｎ…第１の抵抗器、Ｒｂ１〜Ｒｂｎ…第２の抵抗器、Ｃｄ１〜Ｃｄｎ…コンデンサ A ... Voltage detection device, B ... Battery, C1-Cn ... Battery cell, H1-Hn ... Discharge circuit, F1-Fn ... Filter circuit, D ... Voltage detection circuit, M ... Microcomputer (control means), S1-Sn ... Switching Element, Ra1 to Ran ... first resistor, Rb1 to Rbn ... second resistor, Cd1 to Cdn ... capacitor
Claims (2)
内部温度が所定の制限温度を超えないように前記放電回路のスイッチング素子のオン回数を変化させる制御手段を具備することを特徴とする電圧検出装置。 A voltage detection apparatus comprising a switching element and a resistor connected in series, a discharge circuit connected in parallel to each of a plurality of battery cells constituting the battery, and a voltage detection circuit for detecting a voltage of each battery cell Because
A voltage detection apparatus comprising: a control unit that changes the number of ON times of the switching element of the discharge circuit so that the internal temperature does not exceed a predetermined limit temperature.
前記オン回数割合値に基づいて前記放電回路のスイッチング素子の所定時間内におけるオン回数を変化させることを特徴とする電圧検出装置。 A value obtained by multiplying a value obtained by dividing the voltage of the battery cell by the impedance of the discharge circuit by 1000 is calculated as a first discharge current value, and a value obtained by multiplying the first discharge current value by a ratio of an ON period in one cycle. Is calculated as a second discharge current value, and a value obtained by multiplying a value obtained by multiplying a current limit value predetermined based on the discharge circuit by the second discharge current value by 100 is calculated as an on-count ratio value. Further comprising means,
A voltage detection device that changes the number of ON times within a predetermined time of the switching element of the discharge circuit based on the ON number ratio value.
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